Components for increased power handling

Abstract

The component assembly may include an electrical component disposed on the heat dissipating component to mechanically stabilize the electrical component such that the electrical component may be relatively thin. For example, the heat dissipation component may include a heat dissipation substrate including a thermally conductive material that is non-electrically conductive. The heat dissipation substrate may have a first surface and a second surface opposite the first surface, wherein a conductive layer is formed on the second surface of the heat dissipation substrate. The electrical component may include a component substrate having a first surface and a second surface opposite the first surface, and a conductive pattern may be formed on the first surface of the component substrate. The second surface of the component substrate may be disposed adjacent to the first surface of the heat dissipation substrate.

Description

(19) State Intellectual Property Office (12) Invention Patent Application (10) Publication Number (43) Publication Date (21) Application Number 202480031271.5 (22) Application Date 2024.04.30 (30) Priority Data 63 / 503,500 2023.05.22 US (85) PCT International Application Entering National Phase Date 2025.11.10 (86) PCT International Application Application Data PCT / US2024 / 026993 2024.04.30 (87) PCT International Application Publication Data WO2024 / 242832 EN 2024.11.28 (71) Applicant: Kyocera AVX Components Co., Ltd. Address: South Carolina, USA (72) Inventors: Corey Nelson, Shelby Bartley, Thomas Delvoure (74) Patent Agency: Beijing Zhongbo Shida Patent & Trademark Agency Co., Ltd. 11274 Patent Attorney: Xing Yue (51) Int.Cl. H05K 7 / 20 (2006.01) H05K 3 / 40 (2006.01) H05K 3 / 46 (2006.01) (54) Invention Title: Component for Enhanced Power Processing (57) Abstract: The component assembly may include an electrical component disposed on a heat dissipation component to mechanically stabilize the electrical component, such that the electrical component can be relatively thin. For example, the heat dissipation component may include a heat dissipation substrate comprising a non-conductive thermally conductive material. The heat dissipation substrate may have a first surface and a second surface opposite to the first surface, wherein a conductive layer is formed on the second surface of the heat dissipation substrate. The electrical component may include a component substrate having a first surface and a second surface opposite to the first surface, and a conductive pattern may be formed on the first surface of the component substrate. The second surface of the component substrate may be disposed adjacent to the first surface of a heat dissipation substrate. Claims 2 pages, Description 10 pages, Drawings 4 pages, CN 121100595 A 2025.12.09 CN 1 21 10 05 95 A 1. A component assembly, comprising: a heat dissipation component, the heat dissipation component comprising: a heat dissipation substrate, the heat dissipation substrate comprising a non-conductive thermally conductive material, the heat dissipation substrate having a first surface and a second surface opposite to the first surface, and a second conductive layer formed on the second surface of the heat dissipation substrate; and an electrical component, the electrical component comprising: a component substrate, the component substrate having a first surface and a second surface opposite to the first surface, and a conductive pattern formed on the first surface of the component substrate, wherein the electrical component is disposed on the heat dissipation component such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.2. The component assembly of claim 1, wherein the heat dissipation component further comprises a first conductive layer formed on a first surface of the heat dissipation substrate. 3. The component assembly of claim 2, wherein the electrical component further comprises a conductive layer formed on a second surface of the component substrate. 4. The component assembly of claim 3, wherein the first conductive layer of the heat dissipation component is bonded to the conductive layer of the electrical component. 5. The component assembly of claim 4, wherein the first conductive layer is bonded to the conductive layer of the electrical component by epoxy resin. 6. The component assembly of claim 4, wherein the first conductive layer is a first metal layer, and the conductive layer of the electrical component is a component metal layer, and wherein the first metal layer is bonded to the component metal layer by metallization bonding. 7. The component assembly of claim 4, wherein the first conductive layer extends over the entire first surface of the heat dissipation substrate, and the conductive layer of the electrical component extends over the entire second surface of the component substrate. 8. The component assembly of claim 4, wherein a gap is formed in at least one of the first conductive layer or the conductive layer of the electrical component for receiving adhesive. 9. The component assembly of claim 2, wherein the first conductive layer extends over the entire first surface of the heat dissipation substrate. 10. The component assembly of claim 2, wherein the first conductive layer is a first metal layer and the second conductive layer is a second metal layer. 11. The component assembly of claim 2, wherein at least one via extends from the first conductive layer through the heat dissipation substrate to the second conductive layer. 12. The component assembly of claim 11, wherein the at least one via comprises a conductive material for electrically connecting the first conductive layer and the second conductive layer. 13. The component assembly of claim 1, wherein the electrical component further comprises a conductive layer formed on a second surface of the component substrate. 14. The component assembly of claim 13, wherein the conductive layer of the electrical component extends over the entire second surface of the component substrate. 15. The component assembly of claim 1, wherein the electrical component is bonded to the heat dissipation component by an adhesive. Claims 1 / 2 Page 2 CN 121100595 A 16. The component assembly of claim 1, wherein the thickness of the component substrate is less than about 600 μm. 17. The component assembly of claim 1, wherein the ratio of the thickness of the heat dissipation substrate to the thickness of the component substrate is at least about 0.2. 18. The component assembly of claim 1, wherein the ratio of the total thickness of the component to the thickness of the component substrate is at least about 2.19. The component assembly of claim 1, wherein the conductive pattern comprises at least one of: a capacitor; an inductor; a resistor; a transmission line; a filter; a splitter; an attenuator; or a duplexer. 20. A method of forming a component assembly, the method comprising: depositing a conductive material on a second surface of a heat-dissipating substrate to form a second conductive layer on the heat-dissipating substrate, the heat-dissipating substrate comprising a non-conductive thermally conductive material, the second surface of the heat-dissipating substrate opposite to a first surface of the heat-dissipating substrate; and forming a conductive pattern on a first surface of a component substrate of an electrical component, the component substrate having a second surface opposite to the first surface, wherein the component substrate is disposed on the heat-dissipating substrate such that the second surface of the component substrate is adjacent to the first surface of the heat-dissipating substrate. Claims 2 / 2 Page 3 CN 121100595 A Component for Enhanced Power Processing

[0001] Related Applications This application is based on and claims priority to U.S. Provisional Patent Application No. 63 / 503,500, filed May 22, 2023, which is incorporated herein by reference. Background Art

[0002] Circuits (e.g., power amplifier circuits) generate heat during normal operation. Heat accumulation can undesirably raise the temperature of various components in the circuit. If this heat is not adequately managed (e.g., by dissipating it to a heat sink), the electrical equipment may overheat, leading to damage to electrical components. Furthermore, some components may use thicker substrates to ensure structural integrity, which may hinder heat dissipation and thus limit the power handling capability of the components. Improving heat dissipation is desirable in the art. Summary of the Invention

[0003] According to one embodiment of the invention, a component assembly includes a heat dissipation component comprising a heat dissipation substrate comprising a non-conductive thermally conductive material. The heat dissipation substrate has a first surface and a second surface opposite to the first surface. The heat dissipation component also includes a second conductive layer formed on the second surface of the heat dissipation substrate. The component assembly also includes an electrical component comprising a component substrate having a first surface and a second surface opposite to the first surface, and a conductive pattern is formed on the first surface of the component substrate. The electrical component is disposed on the heat dissipation component such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.

[0004] According to another embodiment of the present invention, a method of forming a component assembly includes: depositing a conductive material on a second surface of a heat-dissipating substrate to form a second conductive layer on the heat-dissipating substrate. The heat-dissipating substrate comprises a non-conductive thermally conductive material, and the second surface of the heat-dissipating substrate is opposite to a first surface of the heat-dissipating substrate. The method further includes: forming a conductive pattern on the first surface of a component substrate of an electrical component. The component substrate has a second surface opposite to the first surface.A component substrate is disposed on a heat dissipation substrate such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.

[0005] The complete and feasible disclosure of the invention (including its preferred mode) is set forth in more detail in the remainder of the specification with reference to the accompanying drawings, in which: FIG1 is a perspective view of a component assembly according to various aspects of the present disclosure; FIG2 is a perspective view of a heat dissipation component of the component assembly of FIG1 according to various aspects of the present disclosure; FIG3 is a perspective view of another embodiment of the heat dissipation component of FIG2 according to various aspects of the present disclosure; FIG4 is a perspective view of an electrical component of the component assembly of FIG1 according to various aspects of the present disclosure; FIG5 is a perspective view of the component assembly of FIG1 before reducing the thickness of the component substrate of the electrical component and before depositing conductive patterns on the exposed surfaces of the electrical component according to various aspects of the present disclosure; FIG6 is a perspective view of the component assembly of FIG1 according to various aspects of the present disclosure assembled with a device; and FIG7 is a flowchart illustrating a method for forming a component assembly according to various aspects of the present disclosure.

[0006] Reference numerals used repeatedly in this specification and drawings are intended to denote the same or similar features or elements of the invention. Detailed Description 1 / 10 pages 4 CN 121100595 A Detailed Description

[0007] It will be understood by those skilled in the art that this discussion is merely a description of exemplary embodiments and is not intended to limit the broader aspects of the invention embodied in the exemplary structures.

[0008] Generally, the present invention relates to relatively thin components having features that manage heat flow leaving the component and provide mechanical integrity to the component. For example, a component assembly may include an electrical component disposed on a heat dissipation component, which may help to dissipate heat from the electrical component and provide stability to the relatively thin electrical component. One or more conductive layers may extend on one or more surfaces of the heat dissipation component or the electrical component, which may provide additional mechanical integrity to the assembly and may also facilitate electrical and thermal connections between the electrical component and the heat dissipation component. The thickness of the electrical component may be such that, for example, the ratio of the total thickness of the assembly to the thickness of the electrical component is, for example, at least about 2.

[0009] As described herein, for example, processing the substrate of the electrical component to reduce its thickness after bonding it to the heat dissipation component can allow the electrical component to be thinned beyond what was previously permitted, for example, to a relatively extreme level. Heat dissipation components that may include metal layers, etc., increase the mechanical strength of the assembly, thereby allowing the thickness of the electrical component to be reduced to such a relatively extreme level without affecting the function or usability of the part. Furthermore, a thinner electrical component substrate can facilitate faster heat transfer through the part, allowing for more efficient management of heat flow through the electrical component. The substrate of the heat dissipation component can be selected to further facilitate rather than hinder the removal of heat from the electrical component.Since the temperature of a component or the heat within a component increases due to the higher or greater power of the component, more efficient heat flow management can improve the power handling of the component. That is, faster heat transfer from the component allows the component to handle higher power.

[0010] In some embodiments, the component assembly includes a heat dissipation component having a heat dissipation substrate comprising a non-conductive thermally conductive material. A conductive layer may be formed on one surface of the heat dissipation substrate. In some embodiments, another conductive layer is formed on an opposing surface of the heat dissipation substrate. Thus, the heat dissipation component may include a first conductive layer formed on a first surface of the heat dissipation substrate and a second conductive layer formed on a second surface of the heat dissipation substrate, wherein the second surface is opposite to the first surface. It will be appreciated that in some embodiments, the heat dissipation component may include only one conductive layer, while in other embodiments, the heat dissipation component includes at least two conductive layers.

[0011] In some embodiments, the electrical component includes a component substrate having a first surface and a second surface opposite to the first surface. The electrical component may be disposed on the heat dissipation component such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.

[0012] In some embodiments, the electrical component includes a conductive layer formed on the second surface of the component substrate. In such embodiments, the conductive layer of the electrical component may contact the first surface of the heat dissipation component, or in embodiments where the first conductive layer is formed on the first surface of the heat dissipation substrate, contact the first conductive layer of the heat dissipation component.

[0013] In some embodiments, the first conductive layer of the heat dissipation component is bonded to the conductive layer of the electrical component. That is, when the electrical component is disposed on the heat dissipation component, the two components may be bonded together. In embodiments including the first conductive layer of the heat dissipation component and the conductive layer of the electrical component, the first conductive layer may be bonded to the conductive layer of the electrical component by an adhesive (e.g., a polymeric adhesive like epoxy resin or any suitable adhesive). In other embodiments, the first conductive layer is a first metal layer, and the conductive layer of the electrical component is a component metal layer, and the first metal layer may be bonded to the component metal layer by a metallization bond.

[0014] In some embodiments, at least one conductive layer extends over the entire respective surface on which the layer is formed. For example, the first conductive layer extends over the entire first surface of the heat dissipation substrate, the second conductive layer extends over the entire second surface of the heat dissipation substrate, and / or the conductive layer of the electrical component extends over the entire second surface of the component substrate. In this way, one or more of the multiple conductive layers may extend only on a portion of the corresponding surface on which the layer is formed, rather than extending across the entire surface. For example, the corresponding conductive layer may be spaced apart from one or more edges defining the surface on which the layer is formed.

[0015] In some embodiments, a gap is formed in at least one of the first conductive layer or the conductive layer of the electrical component to receive adhesive. More specifically, for embodiments of a heat-dissipating component including the first conductive layer, gaps, openings, or recesses may be formed or defined in the conductive material of that layer. Such gaps, openings, recesses, etc., define a space for receiving adhesive such that when the electrical component is positioned against the first conductive layer, at least a portion of the adhesive remains in place to bond the heat-dissipating component and the electrical component together. In other embodiments, such as in embodiments where the first conductive layer of the heat-dissipating component is omitted, such gaps, etc., may be formed in a conductive layer formed on a second surface of the component substrate that contacts the heat-dissipating component when the electrical component is disposed on the heat-dissipating component. It will be appreciated that without such space for adhesive, the adhesive will only extend on the contact surface between the heat-dissipating component and the electrical component, and the adhesive may be forced to move outward to the boundary of the component when the components are placed together.

[0016] In some embodiments, one or more vias are formed in the heat-dissipating substrate. For example, at least one via may extend from the first conductive layer through the heat-dissipating substrate to the second conductive layer. In some embodiments, the at least one via includes an electrical material for electrically connecting the first conductive layer and the second conductive layer. For example, the at least one via may be electroplated with a conductive material or otherwise filled with a conductive material.

[0017] As described herein, the original first surface of the conductive substrate, free of conductive material, may be treated to reduce the thickness of the component substrate. As an example, the original first surface of the component substrate may be ground to reduce the thickness of the component substrate. Other techniques for removing substrate material may also be used.

[0018] After the treatment to reduce the thickness of the component substrate, the thickness of the component substrate may be less than about 600 μm (micrometer or micron). In some embodiments, the thickness of the component substrate may be less than about 500 μm, less than about 250 μm in some embodiments, less than about 125 μm in some embodiments, and less than about 75 μm in some embodiments. The thickness of the component substrate can be in the range of about 50 μm to about 600 μm, for example, in the range of about 75 μm to about 500 μm, in the range of about 100 μm to about 400 μm, or in the range of about 150 μm to about 300 μm.

[0019] In some embodiments, the thickness of the heat dissipation substrate can be at least about 100 μm to about 1500 μm. For example, the thickness of the heat dissipation substrate can be about 100 μm or more, about 125 μm or more, about 250 μm or more, about 500 μm or more, about 1000 μm or more, or about 1250 μm or more.In some embodiments, the thickness of the heat dissipation substrate can be in the range of about 100 μm to about 1500 μm, for example, in the range of about 150 μm to about 1250 μm, in the range of about 250 μm to about 1000 μm, or in the range of about 300 μm to about 750 μm.

[0020] In some embodiments, the ratio of the thickness of the heat dissipation substrate to the thickness of the component substrate can be at least about 0.2. In some embodiments, the ratio of the thickness of the heat dissipation substrate to the thickness of the component substrate can be at least about 0.5, at least about 1 in some embodiments, at least about 5 in some embodiments, at least about 10 in some embodiments, and at least about 20 in some embodiments. For example, the ratio of the thickness of the heat dissipation substrate to the thickness of the component substrate 120 can be in the range of about 0.2 to about 25, for example, in the range of about 0.25 to about 20 or in the range of about 1 to about 15.

[0021] Furthermore, in some embodiments, the ratio of the total thickness of the component to the thickness of the component substrate is at least about 1.1. In some embodiments, the ratio of the total thickness of the component to the thickness of the component substrate may be at least about 2, at least about 3 in some embodiments, at least about 5 in some embodiments, at least about 10 in some embodiments, and at least about 25 in some embodiments. For example, the ratio of the total thickness of the component to the thickness of the component substrate may be in the range of about 2 to about 30, for example, in the range of about 3 to about 25 or in the range of about 5 to about 20, as described on page 3 / 10 of the specification, CN 121100595 A.

[0022] After processing the component substrate, the component substrate includes a first surface (instead of the original first surface) opposite the second surface, on which a conductive layer is formed. In some embodiments, a conductive pattern may be formed on the first surface of the component substrate. The conductive pattern may include conductive materials arranged in any pattern, for example, to define the function or feature of the electrical component. As an example, the conductive pattern may include a resistive element connected between a first terminal and a second terminal. As a further example, the conductive pattern may include one or more passive components connected in series or parallel to form an individual component, such as one or more capacitors, one or more inductors, one or more resistors, or one or more transmission lines, and / or the conductive pattern may include various circuits, such as filters, splitters, attenuators, duplexers, etc.

[0023] The conductive pattern formed on the component substrate may include one or more thin-film components. The one or more thin-film components may include one or more of the following: resistors; rheostats; capacitors; inductors and / or combinations thereof (e.g., thin-film filters). The thin-film components may include one or more layers of conductive material, dielectric material, resistive material, inductive material, or other materials precisely formed using "thin-film" technology.

[0024] As an example, the conductive pattern may include a thin-film rheostat. The rheostat may include barium titanate, zinc oxide, or any other suitable dielectric material. The dielectric material may include various additives, such as additives that generate or enhance the voltage-dependent resistance of the dielectric material. For example, in some embodiments, these additives may include oxides of cobalt; bismuth; manganese; or combinations thereof. In some embodiments, these additives may include oxides of gallium; aluminum; antimony; chromium; titanium; lead; barium; nickel; vanadium; tin; or combinations thereof. The dielectric material may be doped with one or more additives in the range of about 0.5 mol percent to about 3 mol percent, and in some embodiments from about 1 mol percent to about 2 mol percent. The average particle size of the dielectric material may contribute to the nonlinear properties of the dielectric material. In some embodiments, the average particle size may be in the range of about 1 micrometer to 100 micrometers, and in some embodiments from about 2 micrometers to 80 micrometers.

[0025] As another example, one or more thin-film components may include a thin-film resistor comprising one or more resistive layers. For example, the resistive layer may include tantalum nitride (TaN), nickel chromium (NiCr), tantalum aluminide, chromium silicon, titanium nitride, titanium tungsten, tantalum tungsten, oxides and / or nitrides of such materials, and / or any other suitable thin-film resistive material. The resistive layer may have any suitable thickness.

[0026] As another example, one or more thin-film components may include a thin-film capacitor comprising one or more dielectric layers. As an example, the one or more dielectric layers may include one or more suitable ceramic materials. Suitable materials include alumina (Al2O3), aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide (Al2O3), boron nitride (BN), silicon (Si), silicon carbide (SiC), silica (SiO2), silicon nitride (Si3N4), gallium arsenide (GaAs), gallium nitride (GaN), zirconium dioxide (ZrO2), mixtures thereof, oxides and / or nitrides of such materials, or any other suitable ceramic material.Additional example ceramic materials include barium titanate (BaTiO3), calcium titanate (CaTiO3), zinc oxide (ZnO), ceramics containing low-fire glass, or other glass bonding materials. Dielectric materials such as diamond and cubic boron arsenide may also be used.

[0027] The thin film component may include one or more layers with thicknesses ranging from about 0.001 µm to about 1000 μm, from about 0.01 μm to about 100 μm in some embodiments, from about 0.1 μm to about 50 μm in some embodiments, and from about 0.5 μm to about 20 μm in some embodiments. The corresponding one or more layers of material forming the thin film component may be applied using specialized techniques based on etching, photolithography, plasma-enhanced chemical vapor deposition (PECVD) processes, or other technologies. Specification 4 / 10 pages 7 CN 121100595 A

[0028] The heat dissipation substrate of the heat dissipation component may comprise any suitable material having a generally low thermal resistivity (e.g., less than about 6.67 × 10⁻³ m·°C / W) and a generally high resistivity (e.g., greater than about 10¹⁴ ohm·cm). A thermal resistivity of 6.67 × 10⁻³ m·°C / W corresponds to a thermal conductivity of about 150 W / m·°C. In other words, a suitable material for the heat dissipation substrate has a generally high thermal conductivity, for example, greater than about 150 W / m·°C.

[0029] For example, in some embodiments, the heat dissipation substrate may be made of a material with a thermal conductivity between about 100 W / m·°C and about 300 W / m·°C at about 22°C. In other embodiments, the heat dissipation substrate may be made of a material having a thermal conductivity between about 125 W / m•°C and about 250 W / m•°C at about 22°C. In other embodiments, the heat dissipation substrate may be made of a material having a thermal conductivity between about 150 W / m•°C and about 200 W / m•°C at about 22°C.

[0030] In some embodiments, the heat dissipation substrate may include aluminum nitride, beryllium oxide, aluminum oxide, boron nitride, silicon nitride, magnesium oxide, zinc oxide, silicon carbide, any suitable ceramic material, and mixtures thereof.

[0031] In some embodiments, the heat dissipation substrate may include aluminum nitride. For example, in some embodiments, the heat dissipation substrate may be made of any suitable composition including aluminum nitride. In some embodiments, the heat dissipation substrate may be made primarily of aluminum nitride, and for example, the heat dissipation substrate may also contain additives or impurities. In other embodiments, the heat dissipation substrate may include beryllium oxide.For example, in some embodiments, the heat dissipation substrate may be made of any suitable composition including beryllium oxide. In some embodiments, the heat dissipation substrate may be made primarily of beryllium oxide, and for example, the heat dissipation substrate may also contain additives or impurities.

[0032] The component substrate of the electrical component may include one or more dielectric materials. In some embodiments, the one or more dielectric materials may have a low dielectric constant. The dielectric constant may be less than about 100, less than about 75 in some embodiments, less than about 50 in some embodiments, less than about 25 in some embodiments, less than about 15 in some embodiments, and less than about 5 in some embodiments. For example, in some embodiments, the dielectric constant may be in the range of about 1.5 to 100, from about 1.5 to about 75 in some embodiments, and from about 2 to about 8 in some embodiments. The dielectric constant may be determined at an operating temperature of 25°C and a frequency of 1 MHz in accordance with the Test Method Manual Detail 2.5.5.3 (IPC TM-650 2.5.5.3) of the International Electron Industries Connection Association. The dielectric loss tangent can be in the range of about 0.001 to about 0.04, and in some embodiments from about 0.0015 to about 0.0025.

[0033] In some embodiments, the one or more dielectric materials may include organic dielectric materials. Examples of organic dielectrics include polyphenylene ether (PPE) based materials (e.g., Polyclad's LD621 and Park / Nelco's N6000 series), liquid crystal polymers (LCPs) (e.g., Rogers Corporation or WL Gore Associates' LCPs), hydrocarbon composites (e.g., Rogers Corporation's 4000 series), and epoxy-based laminates (e.g., Park / Nelco's N4000 series). For example, specific examples include epoxy group N4000-13, bromine-free materials laminated to LCP, organic layers with high dielectric constant (K) materials, unfilled high-K organic layers, Rogers 4350 materials, Rogers 4003 materials, and other thermoplastic materials (e.g., polyphenylene sulfide resins, polyethylene terephthalate resins, polybutylene terephthalate resins, polyethylene disulfide resins, polyetherketone resins, polytetrafluoroethylene resins, and grafted resins), or similar low dielectric constant, low-loss organic materials.

[0034] In some embodiments, the one or more dielectric materials may comprise ceramic-filled epoxy resins. For example, the one or more dielectric materials may comprise organic compounds, such as polymers (e.g., epoxy resins), and may contain particles of ceramic dielectric materials, such as barium titanate, calcium titanate, zinc oxide, alumina having a low-temperature glass, or other suitable ceramic or glass-bonded materials.

[0035] However, other materials may also be used, including N6000, epoxy N4000-13, bromine-free materials laminated to LCP, organic layers with high-K materials, unfilled high-K organic layers, Rogers 4350 materials, Rogers 4003 materials (from Rogers Corporation), and other thermoplastic materials (e.g., hydrocarbons, Teflon, FR4, epoxy resins, polyamides, polyimides and acrylates, polyphenylene sulfide resins, polyethylene terephthalate resins, polybutylene terephthalate resins, polyethylene disulfide resins, polyetherketone resins, polytetrafluoroethylene resins), BT resin composites (e.g., Speedboard C), thermosetting materials (e.g., Hitachi MCL-LX-67F), and grafted resins, or similar low-dielectric-constant, low-loss organic materials.

[0036] Alternatively, inorganic dielectric materials can be used, including ceramics, semiconductors, or insulating materials, such as, but not limited to, barium titanate, calcium titanate, zinc oxide, alumina having a low-temperature glass, or other suitable ceramic or glass bonding materials. Alternatively, the dielectric material can be an organic compound, such as an epoxy resin (with or without ceramic doping, with or without glass fibers), a material commonly used as a circuit board, or other plastics commonly used as dielectric materials. In these cases, the conductor can be a copper foil that has been chemically etched to provide a pattern. In yet another embodiment, the dielectric material can include a material with a relatively high dielectric constant (K), such as one of NPO (COG), X7R, X5R, X7S, Z5U, Y5V, and strontium titanate. In such examples, the dielectric constant of the dielectric material can be greater than 100, for example in the range of about 100 to about 4000, and in some embodiments in the range of about 1000 to about 3000.

[0037] Referring now to the accompanying drawings, FIG1 shows a component assembly 100 including a heat dissipation component 102 and an electrical component 104. FIG2 and 3 show embodiments of the heat dissipation component 102, while FIG4 depicts an embodiment of the electrical component 104. FIG5 provides a view of the component assembly 100 before the electrical component 104 is thinned and patterned. FIG6 shows the component assembly 100 mounted on a mounting surface 20 of a device 10 (e.g., a printed circuit board, PCB, etc.).

[0038] As shown in FIG1, the electrical component 104 is disposed on the heat dissipation component 102. Referring to FIG2, the heat dissipation component 102 includes a heat dissipation substrate 106 having a first surface 108 and a second surface 110 opposite to the first surface 108. The heat dissipation substrate 106 may include a non-conductive thermally conductive material.For example, the heat dissipation substrate may comprise any suitable material having a generally low thermal resistivity and a generally high resistivity, such as aluminum nitride, beryllium oxide, or any other such material described elsewhere herein.

[0039] As shown in FIG2, a conductive layer 114 may be formed on a second surface 110 of the heat dissipation substrate 106. The conductive layer 114 may be formed of a material including metals, and therefore the conductive layer 114 may also be referred to as a metal layer. For example, the conductive layer or metal layer 114 may be formed of a metallic material (e.g., copper, nickel, gold, silver, or other metals or alloys). Other exemplary materials for forming the conductive layer 114 are described elsewhere herein. Furthermore, the conductive layer 114 may extend over all or only a portion of the second surface 110 of the heat dissipation substrate 106.

[0040] Referring now to FIG3, in some embodiments, a conductive layer 112 may be formed on a first surface 108 of the heat dissipation substrate 106. For embodiments including two conductive layers 112, 114, the conductive layer 112 may be referred to as the first conductive layer 112, and the conductive layer 114 may be referred to as the second conductive layer 114. The first conductive layer 112 may be formed of a material including metal, and therefore the first conductive layer 112 may also be referred to as a metal layer. In embodiments where both the first conductive layer 112 and the second conductive layer 114 are metal layers, the first conductive layer 112 may be referred to as the first metal layer, and the second conductive layer 114 may be referred to as the second metal layer. The first conductive layer or the first metal layer 112 and / or the second conductive layer or the second metal layer 114 may be formed of a metallic material, such as copper, nickel, gold, silver, or other metals or alloys. Other exemplary materials for forming the first conductive layer 112 are described elsewhere herein.

[0041] The first conductive layer 112 may extend over all or only a portion of the first surface 108 of the heat dissipation substrate 106. For example, as shown in FIG3, the first conductive layer 112 extends to each of the four edges defining the extent of the first surface 108 of the heat dissipation substrate 106, but a gap 116 is formed or defined in the first conductive layer 112 such that no conductive material is present within the gap 116. As shown in FIG. 3, the gap 116 may have a body 116a extending longitudinally along the longitudinal direction X defined by the heat dissipation substrate 106, and one or more arms 116b extending laterally along the transverse direction Y defined by the heat dissipation substrate 106.

[0042] As shown in FIG. 1, the gap 116 may contain an adhesive to bond the heat dissipation component 102 and the electrical component 104 together. That is, the gap 116 may provide a container for the adhesive, such that when the heat dissipation component 102 and the electrical component 104 are placed together, at least a portion of the adhesive will not be squeezed out or flow out of the component assembly 100. The adhesive may be a polymeric adhesive, such as epoxy resin, or any other suitable type of adhesive.In other embodiments, the heat dissipation component 102 and the electrical component 104 may be joined together using other types of connections, as described elsewhere herein.

[0043] The first conductive layer 112 and / or the second conductive layer 114 of the heat dissipation component 102 may impart additional structural integrity to the heat dissipation component 102 and the component assembly 100. That is, the first conductive layer 112 and / or the second conductive layer 114 may increase the mechanical strength of the heat dissipation component 102 and may enhance the mechanical strength of the component assembly 100 when assembled with the electrical component 104 to form the component assembly 100. The materials forming the first conductive layer 112 and / or the second conductive layer 114 may be selected to provide the required mechanical strength to the component assembly 100. The mechanical strength or stability provided by the conductive layers 112, 114 may allow the component substrate 120 (FIGs 4, 5) of the electrical component 104 to be thinned to a relatively thin thickness, as described elsewhere herein. Furthermore, as described herein, the first conductive layer 112 and / or the second conductive layer 114 may provide an electrical connection between the heat dissipation component 102 and the electrical component 104 and / or provide an electrical connection through the heat dissipation component 102 and the electrical component 104.

[0044] As further shown in FIG3, at least one via 118 extends from the first conductive layer 112 through the heat dissipation substrate 106 to the second conductive layer 114. In the depicted embodiment, a total of eight vias 118 are defined in the heat dissipation substrate 106, and the eight vias 118 are arranged in two rows, with four vias 118 in each row spaced apart from each other in the longitudinal direction X, and each row spaced apart from each other in the transverse direction Y. In some embodiments, at least one via 118 may include a conductive material for electrically connecting the first conductive layer 112 and the second conductive layer 114. It will be appreciated that the plurality of vias 118 shown in FIG3 are merely examples, and any suitable number and arrangement of vias 118 may be used, for example, to electrically connect the first conductive layer 112 and the second conductive layer 114.

[0045] Turning now to FIG. 4, the electrical component 104 may include a component substrate 120. The component substrate has an original first surface 122 and a second surface 124 opposite to the original first surface 122. Similar to the heat dissipation component 102, the electrical component may include a conductive layer 126 formed on the second surface 124 of the component substrate 120. Similar to the first conductive layer 112 and the second conductive layer 114 of the heat dissipation component 102, the conductive layer 126 of the electrical component 104 may be formed of any suitable conductive material, such as a metal or a material containing a metal. When the conductive layer 126 is formed of a material containing at least one metal, the conductive layer 126 may be referred to as a metal layer. Furthermore, the conductive layer 126 extends over at least a portion of the second surface 124 of the component substrate 120. In some embodiments, the conductive layer 126 extends over the entire second surface 124 of the component substrate 120.

[0046] Similarly to the first conductive layer 112 and the second conductive layer 114 of the heat dissipation component 102, the conductive layer 126 of the electrical component 104 can provide mechanical strength to the component substrate 120 while also providing electrical connection between the heat dissipation component 102 and the electrical component 104. As an example, the conductive layer 126 can be formed of a material with a higher hardness than the component substrate 120, thereby increasing the mechanical strength of the electrical component 104. As described herein, the mechanical integrity provided by the conductive layer 126 and the heat dissipation component 102 can allow the component substrate 120 to be thinned to a thickness less than the typical thickness, as a specific example, less than the typical thickness of a component with a large size or coverage area.

[0047] Referring to FIG. 5, the electrical component 104 can be assembled with the heat dissipation component 102 to form a component assembly 100. For example, the second surface 124 of the component substrate 120 can be adjacent to the first surface 108 of the heat dissipation substrate 106. An adhesive (not shown) can be applied between the heat dissipation component 102 and the electrical component 104 to bond the two components 102, 104 together. For example, as described above, gap 116 can be formed in at least one of the following: a first conductive layer 112 disposed on a first surface 108 of the heat dissipation substrate 106; or a conductive layer 126 formed on a second surface 124 of the component substrate 120. Although not shown in the figures, it will be appreciated that gap 116 defined in the conductive layer 126 of the electrical component 104 can be configured similarly to the gap 116 shown relative to the heat dissipation component 102. At least a portion of the adhesive can be accommodated in one or more gaps 116, for example, such that when the heat dissipation component 102 and the electrical component 104 come into contact with each other, at least a portion of the adhesive remains between the heat dissipation component 102 and the electrical component 104. More specifically, although bringing components 102, 104 into contact with each other may cause the adhesive to spread and may extend beyond the edges of components 102, 104, gap 116 helps to ensure that at least some adhesive remains between components 102 and 104 to bond them together. It will be appreciated that the adhesive can be any suitable substance or material used to hold the heat dissipation component 102 and the electrical component 104 together, such as epoxy resin (or epoxy resin) or other adhesives.

[0048] The heat dissipation component 102 and the electrical component 104 can also be joined together or bonded to each other in other ways. As an example, a metallized connection can be formed between component 102 and component 104. More specifically, in an embodiment including a first conductive layer 112 formed on a first surface 108 of the heat dissipation substrate 106 and a conductive layer 126 formed on a second surface 124 of the component substrate 120, the first conductive layer 112 can contact the conductive layer 126 when the electrical component 104 is stacked with the heat dissipation component 102, as shown in FIG5.In embodiments where the first conductive layer 112 is a first metal layer and the conductive layer 126 is a component metal layer, the first metal layer can be bonded to the component metal layer by metallization bonding. For example, the metal layers can be soldered together, selectively heated to melt the metal layers together at at least one location, etc.

[0049] After the electrical component 104 is bonded to the heat dissipation component 102, the thickness of the electrical component 104 can be reduced. For example, after the components 102 and 104 are bonded together, the original first surface 122 of the component substrate 120 can remain exposed. The component substrate 120 can be processed (e.g., polished, etc.) along the original first surface 122 to reduce the thickness of the component substrate 120, thereby reducing the thickness of the electrical component 104. After processing, the component substrate 120 has a first surface 122' opposite to the second surface 124, wherein a thickness tcsub is defined between the first surface 122' and the second surface 124.

[0050] The thickness of the electrical component 104 can be reduced after the electrical component 104 is bonded to the heat dissipation component 102, rather than before the bonding components 102, 104, because the heat dissipation component 102 can provide additional mechanical stability to the electrical component 104. Furthermore, the mechanical stability provided by the heat dissipation component 102 can allow the component substrate 120 to be thinned to a thickness smaller than previously achieved.

[0051] For example, the thickness tcsub of the component substrate 120 can be less than about 75 μm (micrometer or micron). In some embodiments, the thickness tcsub of the component substrate 120 can be less than about 125 μm, in some embodiments less than about 250 μm, and in some embodiments less than about 500 μm. The thickness tcsub of the component substrate 120 can range from about 50 μm to about 600 μm, for example, from about 75 μm to about 500 μm, from about 100 μm to about 400 μm, or from about 150 μm to about 300 μm.

[0052] Furthermore, the ratio of the thickness thssub of the heat dissipation substrate 106 to the thickness tcsub of the component substrate 120 can be at least about 0.2. In some embodiments, the ratio between the thickness thssub of the heat dissipation substrate 106 and the thickness of the component substrate 120 can be at least about 0.5, at least about 1 in some embodiments, at least about 5 in some embodiments, at least about 10 in some embodiments, and at least about 20 in some embodiments. For example, the ratio of the thickness thssub of the heat dissipation substrate 106 to the thickness tcsub of the component substrate 120 can be in the range of about 0.2 to about 25, for example, in the range of about 0.25 to about 20 or in the range of about 1 to about 15.

[0053] Furthermore, the ratio of the total thickness t of the component assembly 100 to the thickness tcsub of the component substrate is at least about 1.1.In some embodiments, the ratio of the total thickness t of component assembly 100 to the thickness tcsub of component substrate 120 may be at least about 2, at least about 3 in some embodiments, at least about 5 in some embodiments, at least about 10 in some embodiments, and at least about 25 in some embodiments. For example, the ratio of the total thickness t of component assembly 100 to the thickness tcsub of component substrate 120 may be in the range of about 2 to about 30, for example in the range of about 3 to about 25 or in the range of about 5 to about 20.

[0054] It will be appreciated that component substrate 120 may also be thinned (or its thickness reduced) in multiple repetitions. For example, after forming a conductive layer 126 on the second surface 124 of component substrate 120, component substrate 120 may undergo a first processing in which component substrate 120 is processed (e.g., polished, etc.) along the original first surface 122. After the electrical component 104 is bonded to the heat sink (page 8 / 10, CN 121100595 A), the component substrate 120 may undergo a second processing, wherein the component substrate 120 is processed along the surface exposed by the first processing. Other methods for reducing the thickness of the component substrate 120 of the electrical component 104 may also be used.

[0055] Referring back to FIG1, a conductive pattern 128 may be formed on a first surface 122' of the component substrate 120 of the electrical component 104. That is, after thinning the component substrate 120, an electrical path may be formed on the exposed surface 122' of the component substrate 120. In some embodiments, the conductive pattern 128 includes one or more thin film components. As an example, as shown in FIG1, the conductive pattern 128 may include a first terminal 130, a second terminal 132, and a resistive element 134 extending from the first terminal 130 to the second terminal 132. The resistive element 134 may be, for example, a thin film resistor or a thin film varistor formed of one or more resistive layers. However, it will be appreciated that the conductive pattern 128 shown herein is merely an example, and the conductive pattern 128 may include any desired electrical component or conductive path shape, design, or construction. For example, the conductive pattern 128 may include one or more passive components connected in series or parallel to form an individual component, such as one or more capacitors, one or more inductors, one or more resistors, or one or more transmission lines, and / or the conductive pattern 128 may include various circuits, such as filters, splitters, attenuators, duplexers, etc.

[0056] Turning now to FIG6, in some embodiments, component assembly 100 may be mounted on mounting surface 20 of device 10. Device 10 may be a printed circuit board (PCB), etc. For example, the second conductive layer 114 of heat dissipation component 102 may contact mounting surface 20 of device 10.More specifically, in some embodiments, the second conductive layer 114 may contact conductive and / or thermally conductive terminals, etc., defined in or on the mounting surface 20 of the device 10, which may guide heat and / or current from the component assembly 100 into the device 10.

[0057] This disclosure also includes methods of forming a component assembly (e.g., component assembly 100). Referring to FIG7, an exemplary method 700 of forming component assembly 100 includes: (702) depositing a conductive material on a second surface 110 of a heat dissipation substrate 106 of a heat dissipation component 102 to form a second conductive layer 114 on the heat dissipation substrate 106. As described herein, the heat dissipation substrate 106 comprises a non-conductive thermally conductive material, and the second surface 110 of the heat dissipation substrate 106 is opposite to a first surface 108 of the heat dissipation substrate 106. In some embodiments, method 700 further includes: (704) depositing a conductive material on the first surface 108 of the heat dissipation substrate 106 to form a first conductive layer 112 on the heat dissipation substrate 106.

[0058] Consistent with FIG. 7, method 700 may further include: (706) forming at least one via 118 in the heat dissipation substrate 106. One or more vias 118 may extend from a first surface 108 of the heat dissipation substrate 106 to a second surface 110 of the heat dissipation substrate 106. For example, in an embodiment including two layers 112, 114, one or more vias 118 may extend between a first conductive layer 112 on the first surface 108 of the heat dissipation substrate 106 and a second conductive layer 114 on the second surface 110 of the heat dissipation substrate 106. In such an embodiment, method 700 may include: (708) depositing a conductive material within at least one via 118 to electrically connect the first conductive layer 112 and the second conductive layer 114. The conductive material may be the same material used to form the first conductive layer 112 and / or the second conductive layer 114. The one or more vias 118 may be formed by drilling holes in the heat dissipation substrate 106 or otherwise defining the one or more vias 118.

[0059] Furthermore, the method may also include: (710) depositing a conductive material on a second surface 124 of a component substrate 120 of the electrical component 104 to form a conductive layer 126 on the component substrate 120. In the depicted embodiment, method 700 further includes: (712) bonding a first conductive layer 112 of a heat dissipation substrate 106 to the conductive layer 126 of the component substrate 120. The component substrate 120 may be disposed on the heat dissipation substrate 106 such that the second surface 124 of the component substrate 120 is adjacent to the first surface 108 of the heat dissipation substrate 106.

[0060] As an example, bonding the first conductive layer 112 of the heat dissipation substrate 106 to the conductive layer 126 of the component substrate 120 may include: bonding the first conductive layer 112 to the conductive layer 126 of the component substrate 120 using an adhesive.As described in more detail elsewhere herein, (704) depositing a conductive material on a first surface 108 of a heat dissipation substrate 106 to form a first conductive layer (see page 9 / 10 of the specification, CN 121100595 A 112) and / or (710) depositing a conductive material on a second surface 124 of a component substrate 120 to form a conductive layer 126 may include: defining a gap 116 in the conductive material for receiving an adhesive. Of course, the heat dissipation component 102 and the electrical component 104 may be joined together in other ways, such as those described herein.

[0061] As shown in FIG7, method 700 may include: (714) processing the component substrate 120 to reduce the initial thickness tcsub_i of the component substrate 120 such that the component substrate 120 has a processed thickness tcsub of less than about 600 μm. Processing the component substrate 120 may include grinding the original first surface 122 of the component substrate 120 to define a new first surface 122' of the component substrate 120, which is separated from the second surface 124 by the component substrate thickness tcsub. Furthermore, as described elsewhere herein, the component substrate 120 may be bonded to a heat-dissipating substrate 106 before processing it to reduce its thickness; for example, the heat-dissipating substrate 106 may provide additional stability to the component substrate 120 to facilitate a relatively large reduction in thickness, resulting in a relatively thin final component thickness tcsub. For example, the heat-dissipating component 102 may reinforce the electrical component 104, allowing the component substrate 120 to be processed or thinned to relatively extreme levels, for example, without warping or cracking. In some embodiments, the component substrate 120 may be processed to about half (about 50%) or less of its initial thickness tcsub_i, for example, to about one-third (about 33%), about one-quarter (about 25%), about one-fifth (about 20%), about one-sixth (about 17%), about one-eighth (about 12.5%) or less of the initial thickness tcsub_i of the component substrate 120.

[0062] After processing the component substrate 120 to reduce its thickness tcsub, method 700 may include: (716) forming a conductive pattern 128 on a first surface 122' of the component substrate 120 of the electrical component 104. As described herein, the conductive pattern 128 may include one or more thin film components, one or more conductive lines or traces, or any other suitable conductive element. For example, forming the conductive pattern 128 may include: depositing a conductive material to form at least one of the following: a capacitor; an inductor; a resistor; a transmission line; a filter; a splitter; an attenuator; or a duplexer.As shown in Figures 1 and 6, the conductive pattern 128 in the depicted component assembly 100 embodiment includes a resistive element 134 connected between a first terminal 130 and a second terminal 132, such that (716) forming the conductive pattern 128 includes, for example, forming the first terminal 130, the second terminal 132, and the resistive element 134 on the first surface 122' of the component substrate 120 by depositing conductive material on the first surface 122' to define the first terminal 130, the second terminal 132, and the resistive element 134. However, the conductive pattern 128 may have any desired configuration.

[0063] Any suitable method or technique can be used to deposit conductive material on the first surface 108 and / or the second surface 110 of the heat dissipation substrate 106 and the second surface 124 of the component substrate 120. For example, a subtractive, semi-additive, or fully additive process can be used to plate the conductive material into a panel or pattern, followed by printing and etching steps to define a patterned conductive layer. The conductive layer can be formed using photolithography, electroplating (e.g., electrolysis), sputtering, vacuum deposition, printing, or other techniques. For example, a thin layer of conductive material (e.g., foil) can be adhered (e.g., laminated) to the surface of a substrate, which may be a dielectric material. The thin layer of conductive material can be selectively etched using masking and photolithography techniques to create the desired conductive material pattern on the substrate surface.

[0064] These and other modifications and variations of the invention can be practiced by those skilled in the art without departing from the scope of the invention. Furthermore, it should be understood that aspects of the various embodiments can be interchanged, in whole or in part. Moreover, those skilled in the art will understand that the foregoing description is merely illustrative and is not intended to limit the invention further described in the appended claims. Instruction manual, page 10 / 10, 13 CN 121100595 A, Figure 1, Figure 2; Instruction manual, Figure 1 / 4, page 14 CN 121100595 A, Figure 3, Figure 4; Instruction manual, Figure 2 / 4, page 15 CN 121100595 A, Figure 5, Figure 6; Instruction manual, Figure 3 / 4, page 16 CN 121100595 A, Figure 7; Instruction manual, Figure 4 / 4, page 17 CN 121100595 A.

Claims

1. A component assembly, comprising: Heat dissipation component, the heat dissipation component comprising: A heat dissipation substrate, comprising a non-conductive thermally conductive material, the heat dissipation substrate having a first surface and a second surface opposite to the first surface, and A second conductive layer is formed on a second surface of the heat dissipation substrate; and Electrical components, the electrical components including: A component substrate having a first surface and a second surface opposite to the first surface, and A conductive pattern is formed on a first surface of the component substrate. The electrical component is disposed on the heat dissipation component such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.

2. The component assembly according to claim 1, wherein, The heat dissipation component further includes a first conductive layer, which is formed on the first surface of the heat dissipation substrate.

3. The component assembly according to claim 2, wherein, The electrical component also includes a conductive layer formed on a second surface of the component substrate.

4. The component assembly according to claim 3, wherein, The first conductive layer of the heat dissipation component is bonded to the conductive layer of the electrical component.

5. The component assembly according to claim 4, wherein, The first conductive layer is bonded to the conductive layer of the electrical component via epoxy resin.

6. The component assembly according to claim 4, wherein, The first conductive layer is a first metal layer, and the conductive layer of the electrical component is a component metal layer, wherein the first metal layer is bonded to the component metal layer by metallization connection.

7. The component assembly according to claim 4, wherein, The first conductive layer extends over the entire first surface of the heat dissipation substrate, and the conductive layer of the electrical component extends over the entire second surface of the component substrate.

8. The component assembly according to claim 4, wherein, A gap is formed in at least one of the first conductive layer or the conductive layer of the electrical component to receive adhesive.

9. The component assembly according to claim 2, wherein, The first conductive layer extends over the entire first surface of the heat dissipation substrate.

10. The component assembly according to claim 2, wherein, The first conductive layer is a first metal layer, and the second conductive layer is a second metal layer.

11. The component assembly according to claim 2, wherein, At least one via extends from the first conductive layer through the heat dissipation substrate to the second conductive layer.

12. The component assembly according to claim 11, wherein, The at least one via includes a conductive material for electrically connecting the first conductive layer and the second conductive layer.

13. The component assembly according to claim 1, wherein, The electrical component also includes a conductive layer formed on a second surface of the component substrate.

14. The component assembly according to claim 13, wherein, The conductive layer of the electrical component extends over the entire second surface of the component substrate.

15. The component assembly according to claim 1, wherein, The electrical components are bonded to the heat dissipation components by adhesive.

16. The component assembly according to claim 1, wherein, The thickness of the component substrate is less than approximately 600 μm.

17. The component assembly according to claim 1, wherein, The ratio of the thickness of the heat dissipation substrate to the thickness of the component substrate is at least about 0.

2.

18. The component assembly according to claim 1, wherein, The ratio of the total thickness of the component to the thickness of the component substrate is at least about 2.

19. The component assembly according to claim 1, wherein, The conductive pattern includes at least one of the following: a capacitor; an inductor; a resistor; a transmission line; a filter; a splitter; an attenuator; or a duplexer.

20. A method of forming a component assembly, the method comprising: A conductive material is deposited on the second surface of a heat dissipation substrate to form a second conductive layer on the heat dissipation substrate, the heat dissipation substrate comprising a non-conductive thermally conductive material, the second surface of the heat dissipation substrate being opposite to the first surface of the heat dissipation substrate; as well as A conductive pattern is formed on a first surface of a component substrate for an electrical component, the component substrate having a second surface opposite to the first surface. The component substrate is disposed on the heat dissipation substrate such that the second surface of the component substrate is adjacent to the first surface of the heat dissipation substrate.

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