MEMRISTOR-BASED RADIATION SENSOR USING ELECTRODEPOSIT FABRICATION

Abstract

This invention is a memristor-based radiation sensor using electrodeposition fabrication techniques where the radiation sensor is built and developed to complement the weaknesses of previous inventions which tend to be expensive, large in size, and require high power consumption, with the embodiment of the sensor consisting of a bottom electrode substrate in the form of a conductive substrate based on fluorinated transparent electrodes (FTO), an active layer of zinc oxide (ZnO) formed using electrodeposition techniques, and a top electrode in the form of a conductive metal, namely silver (Ag) which is deposited on top of the ZnO layer to form an electrical contact thus forming a memristor sandwich structure. This sandwich structure is connected with an external connecting unit in the form of two terminals so that resistance measurements can be carried out. The working principle of the sensor is based on changes in the resistance of the ZnO active layer when exposed to radiation.Through this configuration, the resulting radiation sensor can be fabricated more efficiently and energy-efficiently and has the potential to be mass-produced so that it can be integrated with modern electronic devices.