Sputtering target and method for producing sputtering target

Abstract

This sputtering target is formed from multiple structural members including a target and a substrate. The multiple structural members include a first structural member and a second structural member that are layered together. The first structural member contains Al and the second structural member contains Cu. At least one of the first structural member and the second structural member contains Mg. The sputtering target contains Al and Cu between the first structural member and the second structural member and has an alloy layer contacting the first structural member and the second structural member. At least a portion of the alloy layer further includes an Mg-containing layer in which Mg content is 5.0 at% or more.

Description

Sputtering target and method for manufacturing sputtering target

[0001] This specification discloses techniques relating to sputtering targets and methods for manufacturing sputtering targets.

[0002] In recent years, with the dramatic advances in semiconductor-related technologies, there has been a trend toward higher integration of semiconductors and smaller electronic devices incorporating semiconductor chips. Under these circumstances, in the manufacture of electronic devices and the like, a large number of thin films are formed by sputtering using various sputtering targets. Examples of such thin films include titanium or titanium alloy films, titanium silicide films, and titanium nitride films. Sputtering targets are used that include a target material made of titanium or other materials appropriate for the thin film.

[0003] The formation of a thin film by sputtering is carried out, for example, as follows: First, in a vacuum, a high voltage is applied between the substrate and the sputtering target while an inert gas such as Ar gas is introduced. Then, ionized Ar + Ions such as these are collided with the target material of the sputtering target. The collision energy releases atoms in the target material, which are then deposited on the substrate. This forms a thin film on the substrate. Sputtering targets come in various shapes, such as flat plates and cylinders, but generally comprise a target material and a substrate bonded to and superimposed on the target material.

[0004] Among these types of techniques, those relating to target materials that mainly contain titanium are described in, for example, Patent Documents 1 to 5.

[0005] International Publication No. 01 / 38598 U.S. Patent No. 6,755,948 JP-A-2001-509548 U.S. Patent No. 5,993,621 JP-A-2010-235998

[0006] However, in a sputtering target composed of multiple components including a target material and a substrate, it may not be possible to bond the first and second components stacked together firmly enough. In this case, there is a concern that peeling may occur at the bonded interface due to warpage fluctuations caused by thermal expansion during sputtering and contraction during cooling, affecting the sputtering process.

[0007] This specification discloses a sputtering target capable of firmly bonding a first component and a second component stacked on top of each other in the sputtering target, and a method for manufacturing the sputtering target.

[0008] The sputtering target disclosed in this specification is a sputtering target composed of multiple components including a target material and a substrate, the multiple components including a first component and a second component stacked on top of each other, the first component containing Al and the second component containing Cu, and at least one of the first component and the second component containing Mg, the sputtering target having an alloy layer containing Al and Cu between the first component and the second component and in contact with the first component and the second component, and the alloy layer further including an Mg-containing layer containing 5.0 at% or more Mg in at least a portion of the alloy layer.

[0009] Furthermore, the method for manufacturing a sputtering target disclosed in this specification is a method for manufacturing a sputtering target composed of a plurality of components including a target material and a substrate, wherein the plurality of components include a first component and a second component stacked on top of each other, the first component containing Al, the second component containing Cu, and at least one of the first component and the second component containing Mg, and the method includes a preparation step of preparing the plurality of components including the first component and the second component, and a joining step of pressing and joining the plurality of components including the first component and the second component in a stacked state.

[0010] According to the above-described sputtering target and method for manufacturing a sputtering target, the first component and the second component stacked on top of each other in the sputtering target can be firmly bonded to each other.

[0011] 1 is a plan view of a sputtering target showing the position where a sample was taken when measuring the bonding strength between an insert material and a substrate. FIG. 2 is a SEM image of a cross section in the thickness direction of the sputtering target of Example 1. FIG. 3 is a SEM image of a cross section in the thickness direction of the sputtering target of Example 2. FIG. 4 is a SEM image of a cross section in the thickness direction of the sputtering target of Comparative Example 1. FIG. 5 is a SEM image of a cross section in the thickness direction of the sputtering target of Comparative Example 2. FIG. 6 is a SEM image showing the scan range by EDX LineScan for the cross section in the thickness direction of the sputtering target of Example 1, and a graph showing the variation in the content of each element. FIG. 7 is a SEM image showing the scan range by EDX LineScan for the cross section in the thickness direction of the sputtering target of Example 2, and a graph showing the variation in the content of each element. FIG. 8 is a SEM image showing the scan range by EDX LineScan for the cross section in the thickness direction of the sputtering target of Example 3, and a graph showing the variation in the content of each element. 1 is an SEM image showing the scan range by EDX Line Scan for a cross section in the thickness direction of the sputtering target of Comparative Example 1, and a graph showing the variation in the content of each element. 2 is an SEM image showing the scan range by EDX Line Scan for a cross section in the thickness direction of the sputtering target of Comparative Example 2, and a graph showing the variation in the content of each element.

[0012] The following describes in detail embodiments of the sputtering target and the method for manufacturing the sputtering target. In one embodiment, the sputtering target is composed of multiple components, including a target material and a substrate. The multiple components include a first component and a second component stacked on top of each other, where the first component contains Al and the second component contains Cu, and at least one of the first component and the second component contains Mg. The sputtering target has an alloy layer between the first component and the second component, containing Al and Cu, and in contact with the first component and the second component. The alloy layer further includes an Mg-containing layer containing 5.0 at% or more Mg in at least a portion of the alloy layer. For ease of explanation, hereinafter, of the stacked components of the sputtering target, one component containing Al will be referred to as the first component, and the other component containing Cu will be referred to as the second component.

[0013] In a sputtering target in which a target material and a substrate are laminated, either the target material or the substrate may be a first component containing Al, and the other may be a second component containing Cu. Also, in a sputtering target in which a target material, an insert material, and a substrate are laminated in this order, the target material may be the first component containing Al and the insert material may be the second component containing Cu, or the insert material may be the first component containing Al and the substrate may be the second component containing Cu.

[0014] It has been found that even if such a first component containing Al and a second component containing Cu are directly laminated and bonded, the bonding strength is low. This is thought to be due to the formation of brittle intermetallic compounds (CuAl, CuAl, etc.) due to interdiffusion of Cu and Al at the interface between the first and second components. If the bonding strength between the first and second components is low, there is a risk that the first and second components will peel off at the bonding interface due to thermal expansion during sputtering and contraction during cooling.

[0015] In contrast, in this embodiment, an alloy layer containing Al and Cu is provided between the first and second components and is in contact with the first and second components, and at least a portion of the alloy layer includes an Mg-containing layer containing 5.0 at% or more of Mg in addition to Al and Cu. This results in a strong bond between the first and second components. It is presumed that the Mg-containing layer in at least a portion of the alloy layer contains Mg in addition to Cu and Al, thereby suppressing the formation of intermetallic compounds between Cu and Al and forming a stronger Al-Cu-Mg alloy. However, without being limited to such a theory, it is sufficient that at least a portion of the Al-Cu-containing alloy layer between the first and second components includes an Mg-containing layer containing Al, Cu, and Mg and having a portion with an Mg content of 5.0 at% or more.

[0016] Here, we will mainly describe in detail examples of sputtering targets in which a target material, an insert material, and a substrate are layered in this order, with the first component being the insert material and the second component being the substrate, and examples in which the first component being the substrate and the second component being the insert material. Although detailed description will be omitted, either one of the first component and the second component may be the target material and the other may be the insert material. Furthermore, sputtering targets that do not include an insert material may also be considered. For example, the first component may be the target material and the second component may be the substrate, or the first component may be the substrate and the second component may be the target material.

[0017] (Target Material) The target material has a sputtering surface to be used for sputtering, and generally has a shape such as a disk or other flat plate, or a cylindrical shape. The material of this target material is appropriately determined depending on the material of the thin film to be formed on a substrate by sputtering. If the insert material contains Al, the target material can be a material that can be bonded to the insert material containing Al, such as Ti, Ta, Cu, Cu alloy, W, WSi, Co, Al, etc.

[0018] Among these, the target material typically contains Ti. In this case, the target material may be made of pure Ti, which mainly contains Ti. The Ti content of the target material made of pure Ti is typically 99.995% by mass or more, but may be 99.999% by mass or more, or even 99.9995% by mass or more. The target material made of pure Ti may contain at least one impurity selected from the group consisting of Al, Fe, Ni, and Cu.

[0019] Alternatively, the target material may be made of a Ti alloy containing Ti and Al. In the case of such a Ti alloy target material, the Al content is, for example, 30 at % to 70 at %, and as an example, may be about 50 at %.

[0020] (Substrate) The substrate has a shape such as a flat plate or a cylindrical shape corresponding to the target material, and is disposed on the back side of the target material opposite the sputtering surface, and is sometimes referred to as a backing plate or a backing tube. In this embodiment, the substrate is disposed with an insert material (described later) sandwiched between it and the target material. That is, the sputtering target of this embodiment is formed by stacking the target material, the insert material, and the substrate in this order.

[0021] When the insert material described below is a first component containing Al, the substrate is a second component containing Cu. Alternatively, when the insert material is a second component containing Cu, the substrate is a first component containing Al. Typically, the insert material is a first component containing Al, and the substrate is a second component containing Cu.

[0022] More specifically, when the substrate is the second component, it may be made of pure Cu containing mainly Cu, or when the substrate is the first component, it may be made of pure Al containing mainly Al.

[0023] Alternatively, when the substrate is the second component, it can be made of a Cu alloy containing Cu and Mg. Alternatively, when the substrate is the first component, it can be made of an Al alloy containing Al and Mg. The Al alloy may contain Si, Mn, Cr, Zn, etc. in addition to Mg. In a specific embodiment, the substrate does not contain Mg, and the insert material further contains Mg. However, both the substrate and the insert material may contain Mg.

[0024] In particular, the substrate is preferably made of a Cu alloy or Al alloy containing Mg. In this case, the Mg content in the substrate is preferably 1.0% by mass to 10.0% by mass, more preferably 3.4% by mass or more. If the Mg content in the substrate is too low, it becomes difficult to form an alloy layer including an Mg-containing layer containing Al, Cu, and Mg between the substrate and the insert material, which raises concerns that the required bonding strength between the substrate and the insert material may not be ensured. If the Mg content in the substrate is too high, the properties inherently required of the Mg-containing substrate may be impaired.

[0025] (Insert Material) An insert material may be interposed between the target material and the substrate. This insert material may be provided for the purpose of performing intermetallic diffusion bonding to improve the bonding strength between the target material and the substrate. In addition, the insert material has functions such as mitigating warpage of the sputtering target and absorbing distortion during sputtering.

[0026] As mentioned above, when the substrate is the second component and contains Cu, the insert material is the first component and contains Al, or when the substrate is the first component and contains Al, the insert material is the second component and contains Cu.

[0027] More specifically, the insert material may be made of pure aluminum containing mainly aluminum when it is the first component, or may be made of pure copper containing mainly copper when it is the second component.

[0028] Alternatively, when the insert material is the first component, it may be made of an Al alloy containing Al and Mg. The Al alloy may contain Si, Mn, Cr, Zn, etc. in addition to Mg. Alternatively, when the insert material is the second component, it may be made of a Cu alloy containing Cu and Mg.

[0029] In particular, the insert material is preferably made of an Al alloy or Cu alloy containing Mg. In this case, the Mg content in the insert material is preferably 1.0% by mass to 10.0% by mass, more preferably 3.4% by mass or more. If the Mg content in the insert material is too low, it becomes difficult to form an alloy layer including an Mg-containing layer containing Al, Cu, and Mg between the insert material and the substrate, which raises concerns that the required bonding strength between the substrate and the insert material may not be ensured. If the Mg content in the insert material is too high, the properties inherently required of the Mg-containing insert material may be impaired.

[0030] (Alloy Layer) An alloy layer containing at least Al and Cu exists between a first component such as an insert material and a second component such as a substrate, and at least a portion of the alloy layer includes an Mg-containing layer containing the three elements Al, Cu, and Mg. The Mg-containing layer contains 5.0 at% or more of Mg. This Mg-containing layer firmly bonds the first component and the second component. In addition to the Mg-containing layer, the alloy layer may also include a layer that does not contain Mg but contains Al and Cu. Even if there is a layer that does not contain Mg in the alloy layer, if there is an Mg-containing layer, a strong alloy of the three elements is formed there, thereby improving the bonding strength between the first component and the second component. However, if there is a portion containing both Al and Cu, there is a possibility that an intermetallic compound of Al and Cu will be formed in that portion, so it is preferable that the Mg-containing layer be formed over a relatively wide area in the alloy layer.

[0031] By performing SEM-EDX (energy dispersive X-ray analysis) on a cross section in the thickness direction perpendicular to the sputtering surface of the target material of the sputtering target, the alloy layer and the Mg-containing layer can be confirmed, and the contents of each of the three elements can be measured.

[0032] The alloy layer refers to a portion between the first and second components where the Al and Cu contents are both 5.0 at% or more in element ratio on the line when a SEM-EDX line scan is performed along the thickness direction of a cross section of a sputtering target. The alloy layer is located between a position on the first component side where both Al and Cu are 5.0 at% or more and a position on the second component side where both Al and Cu are 5.0 at% or more. When the Al or Cu content is confirmed from the alloy layer toward the first or second component near the boundary between the alloy layer and the first or second component, if the Al or Cu content does not decrease to less than 5.0 at%, the position where the content converges to a constant value is defined as the boundary between the alloy layer and the first or second component.

[0033] The Mg-containing layer is a portion of the alloy layer containing the three elements Al, Cu, and Mg, where the Mg content is 5.0 at% or more. The presence or absence of the Mg-containing layer can also be confirmed by performing a SEM-EDX line scan along the thickness direction of a cross section of the sputtering target along the thickness direction. Even if there is a portion in the alloy layer containing the three elements Al, Cu, and Mg, if the Mg content is less than 5.0 at% anywhere in that portion, that portion is not considered to be an Mg-containing layer. The conditions for the SEM-EDX line scan are a magnification of 1000 to 2000 times, a distance between the objective lens and the sample (WD, working distance): 10 mm, and a scan distance: 30 μm to 50 μm.

[0034] The thickness of the alloy layer is preferably 5 μm to 20 μm, more preferably 10 μm to 15 μm. If the thickness of the alloy layer is too thin, the effect of improving the bonding strength due to the Mg-containing layer may not be sufficiently obtained, resulting in a concern that the bonding strength may be reduced. On the other hand, if the thickness of the alloy layer is too thick, the bonding strength due to the Cu-Al intermetallic compound layer may become dominant, resulting in a risk of a decrease in bonding strength. The above-mentioned thickness of the alloy layer refers to the distance in the thickness direction between the position where the content of both Al and Cu is 5.0 at% or more on the first component side and the position where the content of both Al and Cu is 5.0 at% or more on the second component side when an SEM-EDX line scan is performed on a cross section passing through the radial center of the sputtering target and along the thickness direction.

[0035] When a line scan using SEM-EDX is performed along the thickness direction of the sputtering target, the thickness of the Mg-containing layer is preferably 20% or more of the thickness of the alloy layer, which can significantly improve the bonding strength.

[0036] The Mg-containing layer is preferably formed over a relatively large area between the first and second components. When a cross section is observed along the thickness direction through the center of the sputtering target in a plan view (when the sputtering target is disc-shaped, the plan view from the sputtering surface side is circular, so the center of the circle in the radial direction), the Mg-containing layer preferably covers 50% or more of the entire width of the first and second components along a direction perpendicular to the thickness direction of the cross section. The width of the first and second components here refers to the length of the overlapping area between the first and second components along a direction perpendicular to the thickness direction in the cross section along the thickness direction. Such a relatively large area of ​​the Mg-containing layer perpendicular to the thickness direction can further improve bonding strength. Parts of the overlapping area between the first and second components may be free of the Mg-containing layer.

[0037] The alloy layer and the Mg-containing layer are preferably formed by diffusion bonding between the first and second components. In such cases, the Al content of the alloy layer may be lower in the portion contacting the second component than in the portion contacting the first component. Also, the Cu content of the alloy layer may be lower in the portion contacting the first component than in the portion contacting the second component.

[0038] (Bonding strength) The bonding strength between the insert material (first component) and the base material (second component) is 5 kgf / mm 2 or more, and even 10 kgf / mm 2 If the bonding strength between the insert material and the substrate is too low, there is a risk of peeling at the bonding interface via the alloy layer due to thermal expansion during sputtering and contraction during cooling. Although there is no particular problem with bonding strength that is too high, it is more preferable that the bonding strength is 15 kgf / mm 2 The following may occur:

[0039] The bonding strength between the insert material and the substrate is measured as follows. First, samples including the target material, insert material, and substrate are taken in the thickness direction from a sputtering target including the target material, insert material, and substrate. For a sputtering target 1 having a circular planar view as shown in FIG. 1 , seven sample locations Ps are taken: one location at the center in the planar view, three locations equally spaced circumferentially on the outer periphery, and three locations in the center of the radius between these central points and the outer periphery. Then, a uniaxial tensile test is performed on each sample along the thickness direction using a tensile testing device. The strength at which the portion of the sample corresponding to the insert material and the portion corresponding to the substrate peel is measured. The average strength of the samples is taken as the bonding strength.

[0040] (Manufacturing Method) The sputtering target as described above can be manufactured, for example, as described below.

[0041] First, in a preparation step, a plurality of components including a first component and a second component are prepared, the first component containing Al, the second component containing Cu, and at least one of the first component and the second component being made of an alloy containing Mg.

[0042] When manufacturing a sputtering target in which a target material, an insert material, and a substrate are stacked in this order, the aforementioned target material, insert material, and substrate are each prepared. In this embodiment, either the insert material or the substrate is the above-mentioned first component, and the other is the above-mentioned second component.

[0043] As described above, the insert material is typically a first component containing Al, and the substrate is a second component containing Cu. Typically, the substrate does not contain Mg, and the insert material further contains Mg. In a specific embodiment, the insert material is an Al alloy containing Mg. The target material may contain, for example, Ti.

[0044] Then, a bonding process is performed in which multiple components, including a first component and a second component, are stacked and pressurized to bond them. In this embodiment, the target material, the insert material, and the substrate are stacked in this order, and then pressed in the thickness direction to bond them. During this process, as described above, Mg diffuses from the first component and / or the second component, which contains Mg, to the interface between the first component and the second component, and Al and Cu contained in the first component and the second component also diffuse at the interface. As a result, an alloy layer containing at least Al and Cu is formed at the interface between the insert material and the substrate, and an Mg-containing layer containing 5.0 at% or more Mg is also formed within the alloy layer. Because the Mg-containing layer, which contains the three elements Al, Cu, and Mg in the alloy layer, has high strength, the formation of the Mg-containing layer at the interface between the first component and the second component firmly bonds the first component and the second component. Here, the insert material, which is either the first component or the second component, and the base material, which is the other, are firmly joined together.

[0045] The bonding step can be carried out by various methods such as hot isostatic pressing (HIP), hot pressing, or cold isostatic pressing (CIP), but among these, hot isostatic pressing is preferred because it applies isostatic pressure (hydrostatic pressure) while heating at a relatively high temperature, making it easier to effectively diffusion bond the entire interface.

[0046] After the joining step, a sputtering target is obtained in which the target material, the insert material, and the substrate are laminated in this order. In this sputtering target, an alloy layer including an Mg-containing layer containing Al, Cu, and Mg is formed in at least a portion between the insert material and the substrate, and therefore the insert material and the substrate are joined with a required strength.

[0047] Next, a sputtering target as described above was prototyped and its effects were confirmed, which will be described below. However, the description here is for illustrative purposes only and is not intended to be limiting.

[0048] A target material made of pure Ti, an insert material, and a substrate were prepared. In Example 1, the substrate was made of a Cu-Ni-Si alloy containing 1.8 to 3.0 mass% Ni, 0.4 to 0.8 mass% Si, and the remainder Cu. The insert material was made of an Mg-based Al alloy containing approximately 4.0 to 4.9 mass% Mg, approximately 0.05 to 0.25 mass% Cr, and approximately 0.4 to 1.0 mass% Mn, and the remainder Al. The target material, insert material, and substrate were then stacked in this order and subjected to hot isostatic pressing (HIP). This produced a sputtering target.

[0049] In Example 2, a sputtering target was manufactured in the same manner as in Example 1, except that the insert material used was an Mg-based Al alloy containing approximately 2.2 to 2.8 mass% Mg, 0.15 to 0.35 mass% Cr, and the remainder being Al.

[0050] In Example 3, a sputtering target was produced in the same manner as in Example 1, except that the HIP temperature was increased and the time was lengthened.

[0051] In Comparative Example 1, a sputtering target was produced in the same manner as in Example 1, except that an insert made of pure Al, mainly consisting of Al, was used.

[0052] In Comparative Example 2, a sputtering target was manufactured in the same manner as in Example 1, except that the insert material used was a Cu-based Al alloy containing approximately 3.5 to 4.5 mass% Cu, approximately 0.4 to 0.8 mass% Mg, approximately 0.2 to 0.8 mass% Si, 0.4 to 0.8 mass% Mn, and the remainder being Al.

[0053] Cross sections in the thickness direction of each of the sputtering targets of Examples 1 and 2 and Comparative Examples 1 and 2 were observed by SEM-EDX. The images are shown in Figures 2 to 5. From Figures 2 and 3, it is believed that an alloy layer containing Al and Cu is formed at the interface between the target material and the substrate.

[0054] Furthermore, a line scan using EDX was performed on a cross section in the thickness direction of each of the sputtering targets of Examples 1 to 3 and Comparative Examples 1 and 2. This line scan was performed on a sample taken from a position 1 / 2R (a position half the radius R, the center position of the radius) on a cross section along the thickness direction that passes through the radial center of the sputtering target. The results are shown in Figures 6 to 10. In the graphs shown in Figures 6 to 10, the horizontal axis represents the number of measurement points, and the vertical axis represents the element ratio (at%).

[0055] 6 to 8 reveal that the sputtering targets of Examples 1 to 3 contain an Mg-containing layer in the alloy layer, containing Al, Cu, and Mg, with at least a portion of the layer having a Mg content of 5.0 at% or more. In Example 1 shown in FIG. 6, the alloy layer was approximately 10 μm thick, and the Mg-containing layer was approximately 4 μm thick. In Example 2 shown in FIG. 7, the alloy layer was approximately 7.63 μm thick, and the Mg-containing layer was approximately 1.55 μm thick. In Example 3, the alloy layer was approximately 15 μm thick, and the Mg-containing layer was approximately 7 μm thick. In all of Examples 1 to 3, the Mg-containing layer was 20% or more thick. In Example 2 (FIG. 7), the Al content in the alloy layer on the substrate side did not decrease to less than 5.0 at%, but the Al content converged to a constant value (approximately 10 at%), and the point where this convergence began was recognized as the boundary between the alloy layer and the substrate.

[0056] In contrast, in the sputtering targets of Comparative Examples 1 and 2, as shown in FIGS. 9 and 10, even though Mg is contained in the alloy layer, the Mg content is less than 5.0 at %, and it can be said that no Mg-containing layer is present.

[0057] Furthermore, for each of the sputtering targets of Examples 1 to 3 and Comparative Examples 1 and 2, the bonding strength was measured based on the above-described method using a tensile testing machine (precision universal testing machine (autograph) AG-100kNX plus manufactured by Shimadzu Corporation). The results are shown in Table 1.

[0058]

[0059] The test results for bonding strength shown in Table 1 reveal that the sputtering targets of Examples 1 to 3 exhibited high bonding strength between the insert material and the substrate. On the other hand, the sputtering targets of Comparative Examples 1 and 2 exhibited lower bonding strength than the sputtering targets of Examples 1 to 3. Furthermore, a comparison of Examples 1 to 3 reveals that increasing the Mg content of the insert material increases the bonding strength.

[0060] From the above, it has been found that the first component and the second component can be firmly joined by forming an Mg-containing layer containing Al, Cu, and Mg and containing 5.0 at% or more of Mg in at least a part of the alloy layer between the first component, such as an insert material or a substrate, and the second component.

[0061] 1 Sputtering target Ps Sample collection point

Claims

1. A sputtering target comprising a plurality of components including a target material and a substrate, wherein the plurality of components include a first component and a second component stacked on top of each other, wherein the first component contains Al and the second component contains Cu, and at least one of the first component and the second component contains Mg, wherein the sputtering target has an alloy layer containing Al and Cu between the first component and the second component and in contact with the first component and the second component, and wherein the alloy layer further comprises an Mg-containing layer containing 5.0 at% or more Mg in at least a portion of the alloy layer.

2. The sputtering target according to claim 1, wherein the sputtering target further comprises an insert material, the target material, the insert material, and the substrate are laminated in this order, the first component being one of the insert material and the substrate, and the second component being the other of the insert material and the substrate.

3. The sputtering target according to claim 2, wherein the first component is the insert material and the second component is the substrate.

4. The bonding strength between the first component and the second component is 5 kgf / mm 2 The sputtering target according to any one of claims 1 to 3, wherein 5. A sputtering target according to any one of claims 1 to 4, wherein the target material contains Ti.

6. A sputtering target according to any one of claims 1 to 5, wherein the alloy layer and the Mg-containing layer are formed by diffusion bonding a first component and a second component.

7. A sputtering target according to any one of claims 1 to 6, wherein the Al content in the alloy layer is lower in a portion in contact with the second component member than in a portion in contact with the first component member.

8. A sputtering target according to any one of claims 1 to 7, wherein the Cu content in the alloy layer is lower in a portion in contact with the first component member than in a portion in contact with the second component member.

9. The sputtering target according to any one of claims 1 to 8, wherein, when a SEM-EDX line scan is performed along the thickness direction of the sputtering target, the thickness of the Mg-containing layer is 20% or more of the thickness of the alloy layer.

10. A sputtering target according to any one of claims 1 to 9, wherein, when a cross section of the sputtering target is observed along the thickness direction passing through the center in a plan view, the Mg-containing layer is formed along a direction perpendicular to the thickness direction, occupying 50% or more of the entire width of the first and second components.

11. A method for manufacturing a sputtering target composed of multiple components including a target material and a substrate, wherein the multiple components include a first component and a second component stacked on top of each other, the first component containing Al and the second component containing Cu, and at least one of the first component and the second component containing Mg, the method comprising: a preparation step of preparing the multiple components including the first component and the second component; and a bonding step of bonding the multiple components including the first component and the second component in a stacked state by applying pressure.

12. The method for producing a sputtering target according to claim 11, wherein the bonding step is carried out by hot isostatic pressing.

13. A method for manufacturing a sputtering target according to claim 11 or 12, wherein the sputtering target further comprises an insert material, and the target material, the insert material, and the substrate are stacked in this order, and the preparation step includes preparing the target material, the insert material, and the substrate, and the first component is one of the insert material and the substrate, and the second component is the other of the insert material and the substrate.

14. The method for manufacturing a sputtering target according to claim 13, wherein the first component member prepared in the preparation step is the insert material, and the second component member is the substrate.

15. The method for producing a sputtering target according to any one of claims 11 to 14, wherein the target material contains Ti.

16. The method for manufacturing a sputtering target according to any one of claims 11 to 15, wherein the first component and the second component are joined by diffusion bonding in the joining step.

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