Semiconductor element, semiconductor device including semiconductor element, and display panel

JP2022142782A5Pending Publication Date: 2025-03-19ENNOSTAR CORP
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Patent Information

Application Number
JP2022040869
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2021-03-16
Filing Date
2022-03-16
Publication Date
2025-03-19

AI Technical Summary

Technical Problem

Existing semiconductor devices face challenges in achieving optimal contact resistance and process stability, particularly in the manufacturing of semiconductor elements and display panels, which affect their performance and reliability.

Method used

The semiconductor device includes a first semiconductor layer with a surface comprising AlGaInAs, InGaAsP, or AlGaAsP, a contact layer with an oxygen element and a fifth metal element, and a first metal element-containing structure that is electrically connected through a p-type or n-type layer without direct contact, utilizing a method that involves forming a semiconductor stack, bonding, and precise temperature-controlled heating steps to create mesa structures and electrode pads.

Benefits of technology

This configuration enhances contact resistance and process stability, improving the optoelectronic properties of semiconductor devices, enabling their use in various applications including lighting, displays, and communication systems.

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Abstract

To provide a semiconductor element, a semiconductor device including the same, and a display panel.SOLUTION: A semiconductor element includes a first semiconductor layer having a surface including a first portion and a second portion, an active region located on the first portion and including AlGaInAs, InGaAsP, AlGaAsP, or AlGaInP, a contact layer located on the second portion, having the same or different conductivity type as the first semiconductor layer and containing an oxygen (O) element and a fifth metal element, and a first metal element-containing structure located on the contact layer. The contact layer directly contacts the first metal element-containing structure and the first semiconductor layer.SELECTED DRAWING: Figure 1
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