Semiconductor light emitting device

Abstract

To provide a semiconductor light emitting device that is capable of shading light emitted from the sides of the semiconductor light emitting element and light guide, and protecting the semiconductor light emitting element and light guide from the outside world, while being highly reliable and easy to manufacture.SOLUTION: It has a light emitting device assembly 10A having a support substrate having a first and second electrode on the bottom, a semiconductor light emitting element 11 having a light emitting semiconductor layer provided on the support substrate and connected to the first and second electrodes, and a light guide 13 bonded on the emitting surface of the semiconductor light emitting element by an adhesive layer 12, and a cylindrical heat shrinkable covering member 14 made of heat shrinkable resin covering the sides of the light emitting device assembly.SELECTED DRAWING: Figure 1C

Description

Technical Field

[0006]

[0001] The present invention relates to a semiconductor light-emitting device, particularly a semiconductor light-emitting device having a semiconductor light-emitting element such as a light-emitting diode (LED).

Background Art

[0002] In recent years, in order to increase the output and control the light distribution, a plurality of semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been arranged and used in multiple devices.

[0003] For example, in an automotive headlight, a light distribution variable headlamp (ADB: Adaptive Driving Beam) that controls the light distribution according to the driving environment is known. Also known are high-output lighting LED packages and LED packages for information and communication devices in which LEDs are arranged at high density.

[0004] However, generally, in a semiconductor light-emitting device in which a plurality of semiconductor light-emitting elements are juxtaposed, part of the light emitted from the conducting element may propagate to the non-conducting element. Such leakage light and optical crosstalk have been a problem in various application fields where a plurality of semiconductor light-emitting elements are arranged and used.

[0005] For example, Patent Document 1 discloses providing a light reflection layer made of a dielectric multilayer film on the side surfaces of a substrate and a light-emitting element. Also, Patent Document 2 discloses a light-emitting element having a reflection member made of a dielectric multilayer film that covers the side surface of a semiconductor laminate and suppresses light leakage from the upper end of the side surface of the semiconductor laminate to the side.

[0006] Patent Document 3 discloses providing a reflection layer made of an optical multilayer film on the side surface of a sealing resin in which a fluorescent substance is dispersed and that seals a light-emitting diode. <00000​Furthermore, Patent Document 4 discloses a semiconductor electronic component in which a semiconductor chip is surrounded by a heat-shrinkable tube and coated with an insulating coating in order to prevent short circuits of the semiconductor chip caused by contact of bonding wires during the manufacturing process. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Publication No. 2015-225862 [Patent Document 2] Japanese Patent Publication No. 2015-119063 [Patent Document 3] Japanese Patent Publication No. 2006-351808 [Patent Document 4] Japanese Patent Publication No. 2001-168132 [Overview of the project] [Problems that the invention aims to solve]

[0009] The present invention has been made in view of the above-mentioned points, and can provide a highly reliable semiconductor light-emitting device that can shield light emitted from the sides of the semiconductor light-emitting element and the light guide, protect the semiconductor light-emitting element and the light guide from the outside world, and also has excellent airtightness. Furthermore, it can provide a semiconductor light-emitting device with a simple structure that is easy to manufacture and low cost. [Means for solving the problem]

[0010] A semiconductor light-emitting device according to one embodiment of the present invention, A support substrate having a first electrode and a second electrode on its bottom surface, and a semiconductor light-emitting element provided on the support substrate and having a light-emitting semiconductor layer connected to the first electrode and the second electrode, A light-emitting element assembly having a light guide bonded to the emission surface of the semiconductor light-emitting element by an adhesive layer, A cylindrical heat-shrinkable covering member made of heat-shrinkable resin covers the side surface of the light-emitting element assembly, It has. [Brief explanation of the drawing]

[0011] [Figure 1A] This is a schematic plan view showing the top surface of a semiconductor light-emitting device 10 according to a first embodiment of the present invention. [Figure 1B] This is a schematic diagram showing a side view of the semiconductor light-emitting device 10. [Figure 1C] This is a schematic cross-sectional view of the semiconductor light-emitting device 10 along line AA in Figure 1A. [Figure 1D] This is a partially enlarged cross-sectional view showing an enlarged view of a portion W of the side of the semiconductor light-emitting device 10. [Figure 2A] This is a plan view showing the top surface of the semiconductor light-emitting element 11. [Figure 2B] This is a schematic plan view showing the back surface of the semiconductor light-emitting element 11. [Figure 2C] This is a cross-sectional view showing a cross-section along line AA as shown in Figure 2A. [Figure 3A] These are a top view and a cross-sectional view showing a tubular covering member 14 made of a light-emitting element assembly 10A and heat-shrinkable resin 14A, set in a covering molding machine 100. [Figure 3B] These are a top view and a cross-sectional view showing a light-emitting element assembly 10A with a pair of pressure molds 101 pressed against it while the coating molding machine 100 is being heated. [Figure 3C] These are a top view and a cross-sectional view showing the manufactured semiconductor light-emitting device with the press mold 101 opened. [Figure 4A] This is a cross-sectional view showing a semiconductor light-emitting device 50, which is a modified example of the first embodiment. [Figure 4B] Figure 4A is a partially enlarged cross-sectional view showing an enlarged cross-section of a part W of the side of the semiconductor light-emitting device 50. [Figure 5A] This is a schematic plan view showing the top surface of a semiconductor light-emitting device 70 according to a second embodiment of the present invention. [Figure 5B] This diagram schematically shows a side view of the semiconductor light-emitting device 70. [Figure 5C] This is a schematic cross-sectional view of the semiconductor light-emitting device 70 along line AA in Figure 5A. [Figure 5D] It is a partial enlarged cross-sectional view showing an enlarged cross-section of a part W on the side of the semiconductor light-emitting device 70. [Figure 6] It is a partial enlarged cross-sectional view showing an enlarged cross-section of a part W of the side wall of the semiconductor light-emitting device 75 of the modification of the second embodiment. [Figure 7A] It is a diagram showing a first individual molding method suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. [Figure 7B] It is a diagram showing an individual molding method suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. [Figure 8A] It is a diagram showing a continuous molding method suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. [Figure 8B] It is a top view when viewed from the plane along the line E-E in FIG. 8A. [Figure 8C] It is a top view when viewed from the plane along the line F-F in FIG. 8A.

Mode for Carrying Out the Invention

[0012] Hereinafter, preferred embodiments of the present invention will be described, but these may be appropriately modified and combined. In the following description and the accompanying drawings, substantially the same or equivalent parts will be denoted by the same reference numerals and described.

[0013] [First Embodiment] (1) Configuration of the semiconductor light-emitting device FIG. 1A is a plan view schematically showing the top surface of the semiconductor light-emitting device 10 according to the first embodiment of the present invention. FIG. 1B is a view schematically showing the side surface of the semiconductor light-emitting device 10. FIG. 1C is a cross-sectional view schematically showing the cross-section of the semiconductor light-emitting device 10 along the line A-A in FIG. 1A. FIG. 1D is a partial enlarged cross-sectional view showing an enlarged cross-section of a part W on the side of the semiconductor light-emitting device 10 shown in FIG. 1C.

[0014] In this embodiment, the semiconductor light-emitting device 10 includes a semiconductor light-emitting element 11 which is a light-emitting diode (LED), an adhesive layer 12 which is a light-transmitting layer made of thermosetting resin, a phosphor plate 13 which is a light guide, and a covering member 14.

[0015] More specifically, the semiconductor light-emitting element 11 and the phosphor plate 13 are bonded together by an adhesive layer 12, which is a light-transmitting layer, to form a single light-emitting element assembly 10A. The light-emitting element assembly 10A has a rectangular prism shape as a whole.

[0016] Furthermore, as shown in Figure 1C, the semiconductor light-emitting device 10 has pad electrodes 34A and 34B on the back surface of the semiconductor light-emitting element 11 that can be directly mounted on a circuit board.

[0017] Furthermore, the shape of the light-emitting element assembly 10A is not limited to a rectangular prism shape, but may also be cylindrical (including oval cylinders) or polygonal prism. In addition, the semiconductor light-emitting element 11 or the phosphor plate 13 (light guide) may have a polygonal prism shape with chamfered corners.

[0018] Furthermore, it is preferable that the covering member 14 covers all sides of the light-emitting element assembly 10A. It is also preferable that the adhesive layer 12 is filled between the semiconductor light-emitting element 11 and the phosphor plate 13 (light guide). While the adhesive layer 12 is preferably a thermosetting resin, a curable resin such as an ultraviolet-curable resin can also be used.

[0019] (2) Covering member As shown in Figures 1C and 1D, in this embodiment, the covering member 14 (hereinafter also referred to as the first covering member) consists of a tubular heat-shrinkable resin 14A with adhesive resin 14G applied to its inner surface, and is bonded to the side surface of the light-emitting element assembly 10A by the heat shrinkage of the heat-shrinkable resin 14A.

[0020] Furthermore, the covering member 14 has a wrap-around portion 14R that wraps around and adheres closely to the back surface of the semiconductor light-emitting element 11. The wrap-around portion 14R of the covering member 14 covers the peripheral edge of the back surface of the semiconductor light-emitting element 11.

[0021] As the heat-shrinkable resin 14A, any resin that can be heat-shrinkable can be used, such as a resin with light reflectivity, for example, a white resin (dye, pigment) or a resin in which reflective particles such as TiO2 particles are dispersed, such as a fluororesin, silicate resin, epoxy resin, or acrylic resin. In particular, fluororesins are preferred because they have excellent airtightness, including resistance to air permeability and water resistance.

[0022] Examples of fluororesins include PTFE (polytetrafluoroethylene), PFA (perfluoroalkoxyalkane), FEP (perfluoroethylenepropene copolymer), and ETFE (ethylenetetrafluoroethylene copolymer).

[0023] Heat-shrinkable tubing is manufactured by, for example, forming a resin into a tube, crosslinking the polymer with an electron beam, expanding it, and then cooling it to fix its shape. It then shrinks back to its original shape due to the force of heating. In other words, heat-shrinkable resin is made by stretching a resin that has been initially formed into a tube, and it has high strength against fracture in the planar direction, and because it is also stretchable, it is resistant to fracture due to thermal history.

[0024] Furthermore, referring to Figure 1D, adhesion can be improved by creating irregularities on the outer surface 13E of the phosphor plate 13 and / or the inner surface 14I of the coating member 14, thereby roughening the surface.

[0025] In the above description, the case in which the heat-shrinkable resin 14A has light reflectivity was explained, but it may also be formed by dispersing light-absorbing particles and using a heat-shrinkable resin that has light-shielding properties due to light absorption.

[0026] (3) Light guide and adhesive layer The phosphor plate 13, which acts as a light guide, also functions as a sealing material on the upper side of the semiconductor light-emitting device 10. Light emitted from the semiconductor light-emitting element 11 enters the phosphor plate 13 from its bottom surface, and the emitted light LO from the semiconductor light-emitting device 10 is emitted from the surface (light-emitting surface 13S) of the phosphor plate 13.

[0027] For example, the semiconductor light-emitting element 11 emits blue light, and the phosphor plate 13 converts the blue light from the semiconductor light-emitting element 11 into yellow light. White light, which is a mixture of blue and yellow light, is emitted from the semiconductor light-emitting device 10 as the emitted light LO. Alternatively, by using a phosphor plate 13 that converts almost all of the blue light from the semiconductor light-emitting element 11 into yellow light, the emitted light LO from the semiconductor light-emitting device 10 can also be yellow light. Similarly, it can also be red light or infrared light.

[0028] The light guide member 13 can be a ceramic phosphor plate made of alumina and YAG:Ce, a glass phosphor plate made of glass and α or β sialon, a resin phosphor plate made of silicone resin and silicate:Ce, or a single-crystal or polycrystalline single-crystal phosphor plate made of YAG and Ce.

[0029] Alternatively, a light-guiding member such as a translucent glass plate, sapphire plate, resin plate, or plate with a lens and diffractive optical element may be used instead of the phosphor plate 13.

[0030] The adhesive layer 12 can be made of a resin that allows light emitted by the semiconductor light-emitting element 11 to pass through, such as a translucent silicone resin, epoxy resin, or acrylic resin. Alternatively, low-melting-point glass, nanometal oxide sintered body, etc., can be used. Furthermore, a composite material in which a porous nanometal oxide sintered body is impregnated with resin or low-melting-point glass can also be used. In addition, a diffusing agent and a light-converting member can be added to the adhesive layer 12.

[0031] (4) Semiconductor light-emitting diodes The semiconductor light-emitting element 11 will be described in detail below with reference to the drawings. Figure 2A is a plan view showing the top surface of the semiconductor light-emitting element 11. For the purpose of explaining the internal electrode structure, the electrodes inside the element are also shown with dashed lines.

[0032] Figure 2B is a schematic plan view showing the back surface of the semiconductor light-emitting element 11, i.e., the surface on which the semiconductor light-emitting element 11 is mounted on a circuit board such as a printed circuit board (PCB). Figure 2C is a cross-sectional view showing a cross-section along line AA shown in Figure 2A.

[0033] Figure 2C is a schematic and detailed cross-sectional view showing an example of the configuration of a semiconductor light-emitting element 11. The semiconductor light-emitting element 11 has a configuration in which an LED semiconductor layer 20, which is a so-called thin-film LED, is attached to a support substrate 31 as the light-emitting semiconductor layer.

[0034] More specifically, the LED semiconductor layer (light-emitting semiconductor layer) 20 has a configuration in which a semiconductor layer (thin-film LED) having an LED structure that has been epitaxially grown on a growth substrate is removed from the growth substrate and attached to a support substrate 31. In this embodiment, the p-type semiconductor layer, which is the outermost growth layer, is attached to the support substrate 31 with the bottom surface facing downwards, and the n-type semiconductor layer is used as the surface layer.

[0035] The support substrate 31 is a conductive n-type substrate made of silicon (Si) doped with P (phosphorus) or As (arsenic), etc.

[0036] The LED semiconductor layer 20 includes an n-type semiconductor layer (second conductivity type semiconductor layer) 21, an emissive layer 22, and a p-type semiconductor layer (first conductivity type semiconductor layer) 23. The n-type semiconductor layer 21 and the p-type semiconductor layer 23 each consist of at least one semiconductor layer and may have various semiconductor layers depending on the purpose, such as an electron or hole barrier layer, a current diffusion layer, or a contact layer.

[0037] In this embodiment, the case where the first conductivity type is p-type and the second conductivity type is n-type will be explained as an example, but the first conductivity type may be n-type and the second conductivity type may be p-type.

[0038] The LED semiconductor layer 20 is, for example, a blue-emitting LED semiconductor layer made of a GaN-based semiconductor layer, but is not limited to this. The light-emitting layer 22 has, for example, a single quantum well (SQW) or multiple quantum well (MQW) structure.

[0039] The LED semiconductor layer 20 has a p-electrode 25A and an n-electrode 25B. The p-electrode 25A is bonded to the substrate p-electrode 32A by a conductive p-side bonding layer 26, and the n-electrode 25B is bonded to the substrate n-electrode 32B by a conductive n-side bonding layer 27.

[0040] The p-electrode 25A consists of an ITO / Ni / Pt / Ag layer in which indium tin oxide (ITO), nickel (Ni), platinum (Pt), and silver (Ag) reflective films are formed in that order on the p-type semiconductor layer 23. The n-electrode 25B consists of an (Ti or Ni) / Pt / Au layer in which titanium (Ti) or nickel (Ni), platinum (Pt), and gold (Au) are formed in that order on the n-type semiconductor layer 21.

[0041] The materials and structures of the p-electrode 25A and n-electrode 25B are not limited to those described above. A suitable structure can be selected as appropriate, taking into consideration characteristics such as improved extraction efficiency due to light reflection, ohmic characteristics, and device reliability (lifetime).

[0042] A protective film 28A made of SiO2 is provided on the side surface of the LED semiconductor layer 20. In addition, a protective film 28B made of SiO2 is provided on the surface of the support substrate 31 (the side that is joined to the LED semiconductor layer 20).

[0043] The substrate p electrode 32A is connected to a conductive via 33, and is electrically connected to the anode electrode 34A (first electrode) on the back surface of the semiconductor light-emitting device 10 via the conductive via 33. The substrate p electrode 32A, the conductive via 33, and the anode electrode 34A are insulated from the support substrate 31 by a substrate insulating film 35 made of SiO2.

[0044] The substrate n electrode 32B is electrically connected to the cathode electrode 34B (second electrode) on the back surface of the semiconductor light-emitting device 10 via a support substrate 31, which is a conductive Si substrate.

[0045] When current is applied to the anode electrode 34A and cathode electrode 34B from a circuit board or the like (not shown) on which the semiconductor light-emitting element 11 is mounted, the semiconductor light-emitting element 11 emits light, which is emitted from the surface 21S of the n-type semiconductor layer 21 (direct light). In addition, light emitted from the light-emitting layer 22 in the opposite direction to the direct light is reflected by the p-electrode 25A and emitted from the surface 21S of the n-type semiconductor layer 21 (reflected light). In other words, the direct light and reflected light are emitted from the surface 21S of the n-type semiconductor layer 21 as the emitted light LE of the semiconductor light-emitting element 11.

[0046] Although the explanation has used the case where the LED semiconductor layer 20 is a thin-film LED as an example, the explanation is not limited to this. The LED semiconductor layer 20 may be, for example, a so-called flip-chip type LED semiconductor layer in which a translucent substrate is used as the growth substrate and the outermost growth surface layer (e.g., a p-type semiconductor layer) is the output surface.

[0047] (5) Method for manufacturing a semiconductor light-emitting device 10 according to the first embodiment Next, the manufacturing process of the semiconductor light-emitting device 10 will be explained with reference to Figures 3A to 3C. In each figure, the top view is shown at the top, and the cross-sectional view along the center line of the light-emitting element assembly 10A is shown at the bottom.

[0048] First, as shown in Figure 3A, a tubular covering member 14 (see Figure 1D) consisting of a light-emitting element assembly 10A and a heat-shrinkable resin 14A with adhesive 14G applied to its inner surface is set in the covering molding machine 100. At this time, as shown in the cross-sectional view, the heat-shrinkable resin 14A is positioned and sized so that it can contact the entire side surface and the peripheral edge of the bottom of the light-emitting element assembly 10A when pressed during molding.

[0049] Furthermore, protective sheets 104 are attached to the electrode pads 34A and 34B of the light-emitting element assembly 10A, and these are fitted into recesses in the base 103 to secure their position.

[0050] Next, as shown in Figure 3B, while the coating molding machine 100 is heated, a pair of L-shaped pressing molds 101 are pressed against the light-emitting element assembly 10A from both sides (arrows in the figure). This causes the coating member 14 to adhere tightly to the sides of the light-emitting element assembly 10A without any gaps. In addition, the adhesive 14G applied to the heat-shrinkable resin 14A hardens due to the heating, and the heat-shrinkable resin 14A adheres to the peripheral edges of the sides and bottom of the light-emitting element assembly 10A.

[0051] Next, as shown in Figure 3C, the pressing die 101 is opened while the coating molding machine 100 is cooled (arrow in the figure). Through these steps, a semiconductor light-emitting device 10 is manufactured in which the coating member 14 is in close contact with the peripheral edges of the sides and bottom of the light-emitting element assembly 10A.

[0052] (6) Modifications of the first embodiment Figure 4A is a cross-sectional view showing a modified semiconductor light-emitting device 50 of the first embodiment, and Figure 4B is a partially enlarged cross-sectional view showing an enlarged view of a part W of the side of the semiconductor light-emitting device 50 shown in Figure 4A.

[0053] In this modified example, a coating member 16 having an inner coating member 16A and an outer coating member 16B is provided on the side surface of the light-emitting element assembly 10A. That is, as shown in Figure 4A, the outer coating member 16B, made of heat-shrinkable resin, is provided in close contact with the outer peripheral surface of the inner coating member 16A. In other words, the semiconductor light-emitting device 50 has a coating member 16 made of two layers of heat-shrinkable resin.

[0054] More specifically, an inner covering member 16A and an outer covering member 16B are laminated together, and a tubular heat-shrinkable resin 16 coated with adhesive resin 14G is bonded to the side surface of the light-emitting element assembly 10A by heat shrinkage.

[0055] The inner covering member 16A is a light-reflective heat-shrinkable resin, such as a white resin, and the outer covering member 16B is a light-absorbing heat-shrinkable resin, such as a black resin.

[0056] Thus, by using a heat-shrinkable resin as the covering member 16, which consists of a light-reflective inner covering member and a light-absorbing outer covering member laminated together, high light-shielding performance is achieved against both light from the light-emitting element assembly 10A and light from the outside of the covering member.

[0057] As described above, the semiconductor light-emitting apparatus 10,50 of the first embodiment can block light emitted from the sides of the semiconductor light-emitting element and the light guide, protect the semiconductor light-emitting element and the light guide from the outside, and provide a highly reliable semiconductor light-emitting apparatus with excellent airtightness. Furthermore, it can provide a semiconductor light-emitting apparatus with a simple structure that is easy to manufacture and low cost.

[0058] [Second Embodiment] (1) Configuration of a semiconductor light-emitting device Figure 5A is a schematic plan view showing the top surface of a semiconductor light-emitting device 70 according to a second embodiment of the present invention. Figure 5B is a schematic side view of the semiconductor light-emitting device 70. Figure 5C is a schematic cross-sectional view showing a cross-section of the semiconductor light-emitting device 70 along line AA in Figure 5A. Figure 5D is a partially enlarged cross-sectional view showing an enlarged view of a cross-section of a part W of the side of the semiconductor light-emitting device 70.

[0059] As shown in Figures 5A to 5C, in this embodiment, the semiconductor light-emitting device 70 has a covering member 16 having a third covering member 71 (inner covering member) and a first covering member 72 (outer covering member) provided on the side surface of the light-emitting device assembly 10A.

[0060] The third covering member 71 is a cured resin, i.e., a molded body, which is, for example, a light-reflective white resin. The first covering member 72 is formed using a tubular covering member made of a heat-shrinkable resin, as described in the first embodiment.

[0061] In this embodiment, the first covering member 72 is made of a light-reflective resin, but it can be selected from a variety of resins such as light-absorbing resins and colored resins.

[0062] As shown in Figure 5D, a third adhesive layer 71G is provided on the inner surface of the third covering member 71, bonding the third covering member 71 and the phosphor plate 13 to each other. Furthermore, a first adhesive layer 72G is provided on the inner surface of the first covering member 72, bonding the first covering member 72 and the third covering member 71 to each other.

[0063] More specifically, the light-emitting element assembly 10A has a rectangular columnar shape, and a third covering member 71, which has a cylindrical outer surface and an arc-shaped (or semi-cylindrical) cross-section, is provided in close contact with each of its four sides. Here, the semi-cylindrical sides (outer surfaces) of the four third covering members 71 together form a single closed cylindrical surface. The first covering member 72 is then provided in close contact with the cylindrical surface formed by the four third covering members 71.

[0064] In other words, a rectangular columnar light-emitting element assembly 10A is inscribed within a cylindrical first covering member 72, and a third covering member 71 with an arc-shaped cross-section is inserted between the first covering member 72 and the light-emitting element assembly 10A, with the third covering member 71 being in close contact with the first covering member 72 and the light-emitting element assembly 10A.

[0065] Furthermore, the first covering member 72 only needs to have a substantially cylindrical shape. That is, even if the first covering member 72 has a recess or protrusion at the connection point between adjacent third covering members 71, or at the portion where the light-emitting element assembly 10A is inscribed within the first covering member 72, it is sufficient that it has a cylindrical shape overall. Even in such cases, the first covering member 72, being a heat-shrinkable tube, can evenly cover the light-emitting element assembly 10A and the third covering member 71 without any gaps through thermal shrinkage.

[0066] Furthermore, although the case in which the third covering member 71 (inner covering member) has an arc-shaped cross-section has been described, the case is not limited to this. The third covering member 71, which is a resin molded body, is inserted between the first covering member 72 (outer covering member) and the light-emitting element assembly 10A, and is filled between the first covering member 72 and the light-emitting element assembly 10A by the heat shrinkage of the first covering member 72, which is a heat-shrinkable resin. In this case, the first covering member 72 can have any shape, including a polygonal prism shape.

[0067] In this embodiment, by inserting a third covering member 71 with an arc-shaped cross-section between the outer surface of the light-emitting element assembly 10A and the heat-shrinkable tube (first covering member 72), the covering molding machine used in the first embodiment becomes unnecessary, and the semiconductor light-emitting device 70 can be manufactured more easily.

[0068] (2) Modifications of the second embodiment Figure 6 is a partially enlarged cross-sectional view showing an enlarged view of a portion W of the side of the semiconductor light-emitting device 75 in a modified example of the second embodiment.

[0069] In this modified example, the outer surface of the third covering member 71A, which is the inner covering member, is provided with a plurality of irregularities (or grooves) 77, and no adhesive is provided between the third covering member 71A and the first covering member 72.

[0070] The first covering member 72, which is a tube made of heat-shrinkable resin, fits into the grooves 77 of the third covering member 71A during heat molding and adheres firmly to the third covering member 71A.

[0071] (3) First method for manufacturing a semiconductor light-emitting device (individual molding method) Figures 7A and 7B show an example of a first manufacturing method, the individual molding method, which is suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. Figures 7A and 7B show the state before and after heat molding, respectively. In each figure, the upper part shows a cross-sectional view along the center line of the light-emitting element assembly 10A, and the lower part shows a top view as seen from the plane along line DD.

[0072] Referring to Figure 7A, in the coating molding machine 200, the guide tube 201 has a rectangular tube shape corresponding to the side surface of the rectangular light-emitting element assembly 10A. The stacked third coating member 71 and first coating member 72 are fed along the guide tube 201. Note that the first adhesive layer 71G and the second adhesive layer 72G (see Figure 5D) are not shown.

[0073] After the third covering member 71 and the first covering member 72 are guided onto the base 103, the guide tube 201 is pulled upward (Figure 7A, cross-sectional view), and the third covering member 71 and the first covering member 72 are positioned with gaps between them and the four sides of the light-emitting element assembly 10A (Figure 7A, top view).

[0074] Next, the third covering member 71 and the first covering member 72 are cut by the cutter-CT to the same height as the light-emitting element assembly 10A (Figure 7A, cross-sectional view).

[0075] Next, when the first covering member 72 is heated by the hot air nozzle 203, as shown in Figure 7B, the first covering member 72 shrinks, and the third covering member 71 adheres tightly to the four sides of the light-emitting element assembly 10A. Furthermore, after thermal shrinkage, the adhesive layer is heat-cured by further heating. The manufacturing of the semiconductor light-emitting device 70 is completed through the above steps.

[0076] (4) First method for manufacturing a semiconductor light-emitting device (continuous molding method) Figure 8A shows an example of a continuous molding method, which is a second manufacturing method suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. Figures 8B and 8C are top views taken from a plane along lines EE and FF in Figure 8A.

[0077] Referring to Figure 8A, in the coating molding machine 300, the light-emitting element assembly 10A is fed downward (arrow in the figure) along a first guide tube 301 which has a rectangular tube shape corresponding to the side surface of the light-emitting element assembly 10A.

[0078] That is, as shown in Figure 8B, the third covering member 71, the first covering member 72, and the light-emitting element assembly 10A are transported with the first guide tube 301 inserted between the third covering member 71 and the light-emitting element assembly 10A.

[0079] Next, when the first covering member 72 is heated by the hot air nozzle 303 at the transfer position where the first guide tube 301 has been removed, the first covering member 72 contracts, and the third covering member 71 adheres tightly to the four sides of the light-emitting element assembly 10A.

[0080] Next, as shown in Figure 8C, the light-emitting element assembly 10A with the first covering member 72 in close contact is transported along the inner surface of the second guide tube 302 and heated by the heater 304 to heat-cur the adhesive layer (Figure 8A).

[0081] Finally, the third covering member 71 and the first covering member 72 are cut by the cutter-CT to the same height as the light-emitting element assembly 10A. The manufacturing of the semiconductor light-emitting device 70 is completed with the above steps.

[0082] As described in detail above, the present invention provides a highly reliable semiconductor light-emitting device that can shield light emitted from the sides of the semiconductor light-emitting element and the light guide, protect the semiconductor light-emitting element and the light guide from the outside world, and also has excellent airtightness. Furthermore, it provides a semiconductor light-emitting device with a simple structure that is easy to manufacture and low cost.

[0083] In the embodiments described above, the semiconductor light-emitting element and the light guide were described in the case where they have a rectangular prism shape, but the invention is not limited to this. For example, the invention can also be applied to cases where they have a polygonal prism shape or a cylindrical shape (including an oblong cylinder).

[0084] Furthermore, while we have described the case where the semiconductor light-emitting device has a cylindrical shape, it is not limited to this. For example, it can also be applied to cases where the device has a polygonal prism shape or a cylindrical shape (including an oblong cylinder). [Explanation of Symbols]

[0085] 10, 50, 70: Semiconductor light-emitting device, 10A: Light-emitting element assembly, 11: Semiconductor light-emitting element, 12: Adhesive layer, 13: Light guide (phosphor plate), 14: Coating member, 14A: Heat shrinkable resin, 14R: Wrap-around part, 16A: Inner coating member, 16B: Outer coating member, 20: Light-emitting semiconductor layer, 21: Second conductivity type semiconductor layer), 22: Light-emitting layer, 23: First conductivity type semiconductor layer, 71, 71A: Third coating member (inner coating member), 72: First coating member (outer coating member), 71G, 72G: Adhesive layer, 200, 300: Coating molding machine

Claims

1. a support substrate having a first electrode and a second electrode on a bottom surface thereof, and a semiconductor light emitting element provided on the support substrate and having a light emitting semiconductor layer connected to the first electrode and the second electrode; a light emitting element assembly having a light guide adhered to an emission surface of the semiconductor light emitting element by an adhesive layer; a cylindrical heat-shrinkable covering member made of a heat-shrinkable resin that covers a side surface of the light-emitting element assembly; The heat-shrinkable covering member constitutes the outermost surface of the semiconductor light-emitting device.

2. A semiconductor light-emitting element having a support substrate having a first electrode and a second electrode on a bottom surface thereof, and a light-emitting semiconductor layer provided on the support substrate and connected to the first electrode and the second electrode; a light emitting element assembly having a light guide adhered to an emission surface of the semiconductor light emitting element by an adhesive layer; a cylindrical heat-shrinkable covering member made of a heat-shrinkable resin that covers a side surface of the light-emitting element assembly; an outer covering member made of a heat-shrinkable resin and provided on the outside of the heat-shrinkable covering member; The outer covering member constitutes the outermost surface of the semiconductor light emitting device.

3. 3. The semiconductor light emitting device according to claim 1, wherein the light emitting element assembly and the heat shrinkable covering member are bonded together with a thermosetting adhesive.

4. The semiconductor light emitting device according to claim 1 , wherein the light emitting element assembly has a rectangular column shape.

5. The semiconductor light emitting device according to claim 1 , wherein the heat shrinkable covering member has a substantially cylindrical or substantially polygonal prism shape.

6. The semiconductor light emitting device according to claim 1 , wherein the light guiding body is a phosphor.

7. The semiconductor light emitting device according to claim 1 , wherein the heat shrinkable covering member has a wraparound portion that wraps around a rear surface of the semiconductor light emitting element to cover a peripheral portion of the rear surface of the semiconductor light emitting element.

8. The heat-shrinkable covering member has a generally cylindrical shape, The semiconductor light emitting device according to claim 1 , further comprising an inner covering member, which is a resin molding inserted and filled between the heat shrinkable covering member and the light emitting element assembly.

9. 9. The semiconductor light emitting device according to claim 8, wherein the light emitting element assembly has a rectangular columnar shape, and the resin molding has an arc-shaped cross section.

10. 10. The semiconductor light emitting device according to claim 8, wherein the inner covering member has an outer surface having a plurality of projections and recesses.

11. The method of claim 1, further comprising the steps of: providing a light emitting device assembly; preparing a covering member made of a heat shrinkable resin and formed into a tube shape; placing the light emitting element assembly inside the covering member; Heating the covering member to shrink the covering member; A method for manufacturing a semiconductor light emitting device comprising the steps of:

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