Substrate processing device

Abstract

To provide a substrate processing device with which it is possible to improve the rate of removing contaminants in the circumferential region of the substrate.SOLUTION: The substrate processing device according to an embodiment comprises: a placement table that has a cleaning surface and which is capable of turning a substrate whose planar shape has a corner; a liquid supply unit that is capable of supplying a liquid to the face of the substrate on the side opposite the placement table side; and a cooling nozzle that is provided in the inside of a first hole that penetrates the placement table, along the central axis of the placement table, and is capable of supplying a cooling gas to the face of the substrate on the placement table side. As seen from a direction along the central axis of the placement table, a discharge part for discharging the cooling gas flowing in a space between the cooling nozzle and the substrate is provided at the position of the substrate side face of the placement table that faces the corner and its vicinity of the substrate.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus.

Background Art

[0002] As a method for removing contaminants such as particles adhering to the surface of a substrate such as an imprint template, a photolithography mask, or a semiconductor wafer, a freeze cleaning method has been proposed.

[0003] In a general freeze cleaning method, first, a substrate is placed on a mounting table. At this time, the surface of the substrate on the side where freeze cleaning is to be performed (for example, the surface on which concave and convex portions serving as a pattern are formed) is oriented upward in the direction of gravity. Next, for example, pure water is supplied to the surface of the rotated substrate on the side where freeze cleaning is to be performed (hereinafter simply referred to as the cleaning surface). Next, the supply of pure water is stopped, and a part of the supplied pure water is discharged to form a water film on the cleaning surface of the substrate. Next, a cooling gas is supplied to the water film to form an ice film. When the water film freezes and the ice film is formed, contaminants such as particles are incorporated into the ice film, so that the contaminants are separated from the cleaning surface of the substrate. Next, pure water is supplied to the ice film to melt the ice film, and the contaminants are removed from the cleaning surface of the substrate together with the pure water. (For example, refer to Patent Document 1)

[0004] If a substrate processing apparatus capable of implementing the freeze cleaning method is used, contaminants can be efficiently removed from the cleaning surface of the substrate. However, in a substrate processing apparatus capable of implementing the freeze cleaning method, there has been room for improvement in improving the removal rate of contaminants in the peripheral region of the substrate.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The problem that this invention aims to solve is to provide a substrate processing apparatus that can improve the removal rate of contaminants in the peripheral region of the substrate. [Means for solving the problem]

[0007] The substrate processing apparatus according to the embodiment includes a mounting table on which a substrate having a cleaning surface and a planar shape having corners can be rotated, a liquid supply unit capable of supplying liquid to the side of the substrate opposite to the mounting table side, and a cooling nozzle provided inside a first hole that penetrates the mounting table along the central axis of the mounting table and capable of supplying cooling gas to the side of the substrate facing the mounting table. When viewed from a direction along the central axis of the mounting table, a discharge unit is provided at a position on the substrate-side surface of the mounting table opposite to the corner of the substrate and its vicinity, for discharging the cooling gas flowing in the space between the cooling nozzle and the substrate. [Effects of the Invention]

[0008] According to embodiments of the present invention, a substrate processing apparatus is provided that can improve the removal rate of contaminants in the peripheral region of the substrate. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic diagram illustrating the substrate processing apparatus according to this embodiment. [Figure 2] Figure 1 is a schematic diagram of the substrate processing apparatus as viewed from the direction of line AA. [Figure 3] This is a schematic cross-sectional view of the discharge section in the direction of the BB line in Figure 2. [Figure 4] This is a schematic cross-sectional view of the discharge section in the direction of the BB line in Figure 2. [Figure 5] This is a schematic diagram illustrating a substrate processing apparatus according to another embodiment. [Figure 6] Figure 5 is a schematic diagram of the substrate processing apparatus as viewed from the direction of line A'-A'. [Figure 7]Figure 6 is a schematic cross-sectional view of the mounting section in the direction of the EE line. [Figure 8] Figure 6 is a schematic cross-sectional view of the discharge section in the direction of the FF line. [Figure 9] This is a schematic diagram illustrating a discharge section according to another embodiment. [Figure 10] Figure 9 is a schematic cross-sectional view of the discharge section in the CC direction. [Figure 11] This is a schematic cross-sectional view illustrating a cooling nozzle according to another embodiment. [Figure 12] This is a schematic cross-sectional view illustrating a cooling nozzle according to another embodiment. [Modes for carrying out the invention]

[0010] The embodiments will be illustrated below with reference to the drawings. In each drawing, similar components are denoted by the same reference numerals, and detailed descriptions will be omitted as appropriate. The substrate 100 exemplified below can be, for example, a semiconductor wafer, an imprint template, a photolithography mask, or a plate-like body used in MEMS (Micro Electro Mechanical Systems).

[0011] The cleaned surface of the substrate 100 may or may not have a pattern of raised and recessed areas. A substrate without raised and recessed areas can be, for example, a substrate before the formation of raised and recessed areas (for example, a so-called bulk substrate).

[0012] Furthermore, in the following section, we will describe the case where the substrate 100 is a photolithography mask as an example. When the substrate 100 is a photolithography mask, the planar shape of the substrate 100 can be, for example, a square.

[0013] Figure 1 is a schematic diagram illustrating a substrate processing apparatus 1 according to this embodiment. FIG. 2 is a schematic view of the substrate processing apparatus 1 in FIG. 1 when viewed in the direction of line A-A. As shown in FIGS. 1 and 2, the substrate processing apparatus 1 is provided with, for example, a mounting unit 2, a cooling unit 3, a liquid supply unit 4, a chamber 5, an exhaust unit 6, and a controller 7.

[0014] The mounting unit 2 rotates the mounted substrate 100. The mounting unit 2 has, for example, a mounting table 2a, support pins 2b, and a drive unit 2c. The mounting table 2a is rotatably provided inside the chamber 5. The mounting table 2a has a plate shape. For example, as shown in FIG. 2, the mounting table 2a can be a disk. The mounting table 2a is provided with a hole 2a1 (corresponding to an example of a first hole) penetrating the mounting table 2a along the central axis 2a4 of the mounting table 2a. The hole 2a1 is provided coaxially with the mounting table 2a.

[0015] A plurality of support pins 2b for supporting the substrate 100 are provided on the upper surface 2a3 (the surface on the side of the substrate 100) of the mounting table 2a. The plurality of support pins 2b are provided around the hole 2a1. When the substrate 100 is supported by the plurality of support pins 2b, the cleaning surface 100b (the surface on the side where cryogenic cleaning is performed) of the substrate 100 faces the side opposite to the side of the mounting table 2a. That is, the mounting unit 2 supports the substrate 100 such that the cleaning surface 100b of the substrate 100 faces the upper side in the gravitational direction.

[0016] The tips 2b1 of the multiple support pins 2b are in contact with the edges of the surface 100a of the substrate 100 opposite to the cleaning surface 100b (hereinafter simply referred to as the back surface 100a). As shown in Figure 1, the tips 2b1 of the multiple support pins 2b are provided with tapered or inclined surfaces. The tip 2b1 of the support pin 2b exemplified in Figure 1 is provided with a tapered surface. Therefore, the edge of the back surface 100a of the substrate 100 comes into contact with the tapered or inclined surface of the tip 2b1. If the part of the support pin 2b that comes into contact with the edge of the back surface 100a of the substrate 100 is a tapered surface, the support pin 2b and the edge of the back surface 100a of the substrate 100 make point contact. If the part of the support pin 2b that comes into contact with the edge of the back surface 100a of the substrate 100 is an inclined surface, the support pin 2b and the edge of the back surface 100a of the substrate 100 make line contact. Therefore, it is possible to suppress the occurrence of dirt, damage, etc. on the back surface 100a of the substrate 100.

[0017] A rotating shaft (not shown) is provided on the side of the mounting base 2a opposite to the side where the multiple support pins 2b are located. The end of the rotating shaft opposite to the mounting base 2a is located outside the chamber 5. The drive unit 2c is located outside the chamber 5 and rotates the mounting base 2a via the rotating shaft. The drive unit 2c has a rotating device such as a motor. In addition to starting and stopping the rotation, the drive unit 2c can also change the rotation speed and direction. In this case, the drive unit 2c can be equipped with a control motor such as a servo motor.

[0018] The cooling unit 3 directly supplies cooling gas 3a1 to the back surface 100a of the substrate 100 from the downward direction in the direction of gravity. The cooling unit 3 includes, for example, a coolant section 3a, a filter 3b, a flow rate control unit 3c, and a cooling nozzle 3d. For example, the coolant section 3a, the filter 3b, and the flow rate control unit 3c are located outside the chamber 5. For example, the cooling nozzle 3d is located inside the chamber 5.

[0019] The coolant section 3a, for example, stores the coolant and generates the cooling gas 3a1. The coolant is a liquefied form of the cooling gas 3a1. The cooling gas 3a1 is not particularly limited as long as it is a gas that does not react easily with the material of the substrate 100. The cooling gas 3a1 can be an inert gas such as nitrogen gas, helium gas, or argon gas.

[0020] In this case, using a gas with a high specific heat can shorten the cooling time of the substrate 100. For example, using helium gas can shorten the cooling time of the substrate 100. Also, using nitrogen gas can reduce the processing cost of the substrate 100.

[0021] The coolant section 3a includes, for example, a tank for storing coolant and a vaporization section for vaporizing the coolant stored in the tank. The tank is equipped with a cooling device for maintaining the temperature of the coolant. The vaporization section raises the temperature of the coolant to generate cooling gas 3a1 from the coolant. In vaporization in the vaporization section, for example, ambient temperature is used or heating with a heat transfer medium is used. The temperature of the cooling gas 3a1 should be below the freezing point of the liquid 101 supplied to the cleaning surface 100b of the substrate 100. The temperature of the cooling gas 3a1 can be, for example, around -170°C.

[0022] The filter 3b is connected to the coolant section 3a via piping. The filter 3b prevents contaminants such as particles contained in the coolant from flowing out to the substrate 100.

[0023] The flow control unit 3c is connected to the filter 3b via piping. The flow control unit 3c controls the flow rate of the cooling gas 3a1. The flow control unit 3c can be, for example, an MFC (Mass Flow Controller). Alternatively, the flow control unit 3c may indirectly control the flow rate of the cooling gas 3a1 by controlling the supply pressure of the cooling gas 3a1. In this case, the flow control unit 3c can be, for example, an APC (Auto Pressure Controller).

[0024] In the coolant section 3a, the temperature of the cooling gas 3a1 generated from the coolant is approximately at a predetermined temperature. Therefore, the flow rate control unit 3c can control the flow rate of the cooling gas 3a1, thereby controlling the temperature of the substrate 100 and, consequently, the temperature of the liquid 101 on the cleaning surface 100b of the substrate 100.

[0025] The cooling nozzle 3d is located on the lower side of the substrate 100 in the direction of gravity. The cooling nozzle 3d supplies cooling gas 3a1 to the space between the mounting base 2a, the cooling nozzle 3d, and the substrate 100. The cooling nozzle 3d is located inside the hole 2a1 of the mounting base 2a. The cooling nozzle 3d is located coaxially with the hole 2a1 of the mounting base 2a. The cooling nozzle 3d has a hole 3d2 that penetrates the cooling nozzle 3d in the direction of its central axis. The hole 3d2 is located coaxially with the cooling nozzle 3d. The hole 3d2 serves as the supply hole (nozzle hole) for the cooling gas 3a1.

[0026] Furthermore, multiple holes 3d2 can be provided. When multiple holes 3d2 are provided, it is preferable to provide the holes 3d2 at positions that are point-symmetrical with respect to the center of the cooling nozzle 3d when viewed from a direction along the central axis 2a4 of the mounting base 2a. In this way, even if multiple holes 3d2 are provided, it is possible to suppress turbulence in the flow of the cooling gas 3a1 that flows in the space between the mounting base 2a and the cooling nozzle 3d and the substrate 100.

[0027] The cooling nozzle 3d can be fixed inside the chamber 5. As mentioned above, the mounting base 2a rotates, so a gap 2a2 is provided between the cooling nozzle 3d fixed inside the chamber 5 and the inner wall of the hole 2a1 in the mounting base 2a. Fixing the cooling nozzle 3d simplifies the sealing structure at the connection point between the cooling nozzle 3d and the flow control unit 3c. This improves the reliability of the cooling gas 3a1 supply and reduces the manufacturing cost of the substrate processing apparatus 1.

[0028] The end face 3d1 of the cooling nozzle 3d on the substrate 100 side faces the back surface 100a of the substrate 100. The end face 3d1 of the cooling nozzle 3d is approximately parallel to the upper surface 2a3 of the mounting base 2a. When the substrate 100 is supported by multiple support pins 2b, the back surface 100a of the substrate 100 becomes approximately parallel to the upper surface 2a3 of the mounting base 2a. Therefore, the end face 3d1 of the cooling nozzle 3d becomes approximately parallel to the back surface 100a of the substrate 100. When the end face 3d1 of the cooling nozzle 3d is approximately parallel to the back surface 100a of the substrate 100, a flow path for cooling gas 3a1 with approximately constant dimensions is formed between the end face 3d1 of the cooling nozzle 3d and the back surface 100a of the substrate 100.

[0029] The liquid supply unit 4 supplies liquid 101 to the cleaning surface 100b of the substrate 100. The liquid 101 supplied to the cleaning surface 100b of the substrate 100 is cooled by the cooling gas 3a1 supplied to the back surface 100a of the substrate 100. When the liquid 101 freezes due to cooling by the cooling gas 3a1, its volume changes, generating a pressure wave. It is believed that this pressure wave separates contaminants adhering to the cleaning surface 100b of the substrate 100. Therefore, there are no particular limitations on the liquid 101 as long as it does not react easily with the material of the substrate 100.

[0030] In this case, if the liquid expands in volume when frozen, it is conceivable that the physical force associated with the volume increase can be used to separate contaminants adhering to the cleaning surface 100b of the substrate 100. Therefore, it is preferable that the liquid 101 is a liquid that does not react easily with the material of the substrate 100 and expands in volume when frozen. For example, the liquid 101 can be water (e.g., pure water or ultrapure water) or a liquid mainly composed of water. A liquid mainly composed of water can be, for example, a mixture of water and alcohol, a mixture of water and an acidic solution, or a mixture of water and an alkaline solution. In addition, a gas can be dissolved in the liquid 101. The gas can be, for example, carbon dioxide, ozone, or hydrogen gas.

[0031] The liquid supply unit 4 includes, for example, a liquid storage unit 4a, a supply unit 4b, a flow rate control unit 4c, and a liquid nozzle 4d. For example, the liquid storage unit 4a, the supply unit 4b, and the flow rate control unit 4c are located outside the chamber 5. For example, the liquid nozzle 4d is located inside the chamber 5.

[0032] The liquid storage section 4a stores the liquid 101. The liquid 101 is stored in the liquid storage section 4a at a temperature higher than its freezing point. For example, the liquid 101 is stored at room temperature (20°C).

[0033] The supply unit 4b is connected to the liquid storage unit 4a via piping. The supply unit 4b supplies the liquid 101 stored in the liquid storage unit 4a toward the liquid nozzle 4d. The supply unit 4b can be, for example, a pump resistant to the liquid 101. Although the example given is that the supply unit 4b is a pump, the supply unit 4b is not limited to a pump. For example, the supply unit 4b may supply gas into the liquid storage unit 4a to pressurize and pump the liquid 101 stored in the liquid storage unit 4a.

[0034] The flow control unit 4c is connected to the supply unit 4b via piping. The flow control unit 4c controls the flow rate of the liquid 101 supplied by the supply unit 4b. The flow control unit 4c can be, for example, a flow control valve. The flow control unit 4c can also start and stop the supply of the liquid 101.

[0035] The liquid nozzle 4d is located on the upper side of the substrate 100 in the direction of gravity. One end of the liquid nozzle 4d is connected to the flow control unit 4c via piping. The other end of the liquid nozzle 4d (the outlet for the liquid 101) faces the cleaning surface 100b of the substrate 100, which is placed on the mounting base 2a. The other end of the liquid nozzle 4d is located approximately above the center of the cleaning surface 100b of the substrate 100.

[0036] The liquid 101 discharged from the liquid nozzle 4d is supplied to the cleaning surface 100b of the substrate 100. As the substrate 100 rotates, the liquid 101 supplied to the cleaning surface 100b of the substrate 100 spreads toward the periphery of the substrate 100. As a result, a film of liquid 101 with approximately constant thickness is formed on the cleaning surface 100b of the substrate 100. Hereafter, the film of liquid 101 formed on the cleaning surface 100b of the substrate 100 will be referred to as the liquid film 101a.

[0037] Chamber 5 is box-shaped. Chamber 5 has an airtight structure that can prevent particles and other contaminants from entering from the outside. Multiple outlets 5a are provided on the side of the bottom surface of Chamber 5. In the case of Chamber 5 illustrated in Figure 1, there are two outlets 5a. Used cooling gas 3a1 and liquid 101 are discharged to the outside of Chamber 5 through the outlets 5a.

[0038] The outlet 5a is located below the substrate 100. As a result, when the cooling gas 3a1 is discharged from the outlet 5a, a downflow is formed inside the chamber 5. This suppresses the scattering of particles. Furthermore, when viewed from a direction along the central axis 2a4 of the mounting base 2a, the multiple outlets 5a are arranged symmetrically with respect to the center of the chamber 5. In this way, the discharge direction of the cooling gas 3a1 is symmetrical with respect to the center of the chamber 5. If the discharge direction of the cooling gas 3a1 is symmetrical, the discharge of the cooling gas 3a1 will be smooth.

[0039] The exhaust unit 6 is connected to the outlet 5a via the exhaust pipe 6a. The exhaust unit 6 discharges the used cooling gas 3a1 to the outside of the chamber 5. The exhaust unit 6 can be, for example, a pump or a blower. The used liquid 101 is discharged to the outside of the chamber 5 via the discharge pipe 6a1 connected to the exhaust pipe 6a.

[0040] In addition, an air supply unit for supplying air to the inside of the chamber 5, a detection unit, and other components can be provided as appropriate. The detection unit detects, for example, the temperature of the liquid film 101a, the temperature of the film in which the liquid 101 and the frozen liquid 101 are mixed, and the temperature of the frozen liquid 101 (frozen film).

[0041] The controller 7 controls the operation of each element provided in the substrate processing apparatus 1. For example, the controller 7 can control the rotation of the substrate 100, the supply of cooling gas 3a1, and the supply of liquid 101. The controller 7 has, for example, an arithmetic unit such as a CPU (Central Processing Unit) and a storage unit such as semiconductor memory. The controller 7 is, for example, a computer. The storage unit can store control programs that control the operation of each element provided in the substrate processing apparatus 1. The arithmetic unit controls the operation of each element provided in the substrate processing apparatus 1 using the control programs stored in the storage unit and data input by the operator.

[0042] For example, the controller 7 controls the operation of each element provided in the substrate processing apparatus 1 to sequentially execute the preliminary process, the liquid film 101a formation process, the cooling process, the thawing process, and the drying process.

[0043] In the preliminary step, the controller 7 controls the supply unit 4b and the flow rate control unit 4c to supply liquid 101 at a predetermined flow rate to the cleaning surface 100b of the substrate 100. The controller 7 also controls the flow rate control unit 3c to supply cooling gas 3a1 at a predetermined flow rate to the back surface 100a of the substrate 100. The supply of cooling gas 3a1 at a predetermined flow rate is carried out continuously, for example, throughout the preliminary step, the liquid film 101a formation step, and the cooling step. The controller 7 also controls the drive unit 2c to rotate the substrate 100 at a predetermined rotational speed.

[0044] In the liquid film 101a formation process, the controller 7 controls the supply unit 4b and the drive unit 2c to form a liquid film 101a having a predetermined thickness.

[0045] In the cooling process, the controller 7 controls the drive unit 2c to sequentially execute the "supercooling process," the "freezing process (solid-liquid phase)," and the "freezing process (solid phase)." In the "supercooling process," the cooling gas 3a1 continuously supplied to the back surface 100a of the substrate 100 causes the temperature of the liquid film 101a to drop below the temperature of the liquid film 101a during the liquid film formation process, resulting in a supercooled state.

[0046] When the supercooled liquid film 101a begins to freeze, the process transitions from the "supercooling process" to the "freezing process (solid-liquid phase)". In the "freezing process (solid-liquid phase)", the liquid 101 and the frozen liquid 101 are present across the entire cleaning surface 100b of the substrate 100. When the liquid film 101a on the cleaning surface 100b of the substrate 100 is completely frozen, the process transitions from the "freezing process (solid-liquid phase)" to the "freezing process (solid phase)". In the "freezing process (solid phase)", only the frozen liquid 101 is present on the cleaning surface 100b of the substrate 100.

[0047] As mentioned above, it is thought that contaminants adhering to the cleaning surface 100b of the substrate 100 will be separated from the cleaning surface 100b by the pressure waves and physical forces generated when the liquid 101 freezes. Therefore, in the "freezing process (solid-liquid phase)" and the "freezing process (solid phase)," the contaminants are separated from the cleaning surface 100b.

[0048] In the thawing process, the controller 7 controls the supply unit 4b and the flow rate control unit 4c to supply liquid 101 to the film of frozen liquid 101 on the cleaning surface 100b of the substrate 100. The controller 7 also controls the flow rate control unit 3c to stop the supply of cooling gas 3a1. The controller 7 also controls the drive unit 2c to increase the rotation speed of the substrate 100. Liquid 101, frozen liquid 101, and contaminants separated from the cleaning surface 100b of the substrate 100 are discharged from the cleaning surface 100b of the substrate 100 by centrifugal force.

[0049] During the drying process, the controller 7 controls the supply unit 4b and the flow rate control unit 4c to stop the supply of liquid 101. The controller 7 can also control the drive unit 2c to further increase the rotation speed of the substrate 100. A faster rotation speed allows for faster drying of the substrate 100. The rotation speed of the substrate 100 is not particularly limited as long as drying is possible.

[0050] As described above, a single freeze-cleaning process can be performed. Furthermore, the freeze-cleaning process can be performed multiple times on a single substrate 100. When performing the freeze-cleaning process multiple times, for example, the drying process can be performed in the final freeze-cleaning process, while the drying process can be omitted in the other freeze-cleaning processes.

[0051] Next, we will further explain how to improve the removal rate of contaminants in the peripheral region of the substrate 100. As mentioned above, contaminants are separated from the cleaning surface 100b during the "freezing process (solid-liquid phase)" and the "freezing process (solid phase)". In this case, if the variation in temperature distribution within the surface of the cleaning surface 100b can be reduced, the variation in the removal rate of contaminants within the surface of the cleaning surface 100b can be reduced. That is, contaminants can be effectively removed from the entire area of ​​the cleaning surface 100b.

[0052] In this case, since the cooling gas 3a1 is directly supplied to the central region of the back surface 100a of the substrate 100, it is easy to lower the temperature in the central region of the cleaning surface 100b to a predetermined temperature. Therefore, it is easy to increase the removal rate of contaminants in the central region of the cleaning surface 100b.

[0053] However, the peripheral region of the back surface 100a of the substrate 100 is supplied with cooling gas 3a1 that has been supplied to the central region of the back surface 100a and diffused in the space between the mounting base 2a and the cooling nozzle 3d and the substrate 100. In addition, a gap 2a2 is provided between the cooling nozzle 3d and the inner wall of the hole 2a1 of the mounting base 2a. Some of the cooling gas 3a1 may be drawn into the gap 2a2. As a result, the flow velocity of the cooling gas 3a1 decreases or the amount of cooling gas 3a1 in contact with the back surface 100a decreases as you move towards the peripheral side of the back surface 100a. If the flow velocity of the cooling gas 3a1 decreases or the amount of cooling gas 3a1 in contact with the back surface 100a decreases in the peripheral region of the back surface 100a, it becomes difficult to lower the temperature of the peripheral region of the cleaning surface 100b of the substrate 100 to a predetermined temperature. Therefore, the removal rate of contaminants in the peripheral region of the cleaning surface 100b tends to be low.

[0054] In this case, the space between the end face 3d1 of the cooling nozzle 3d and the substrate 100 becomes a flow path for the cooling gas 3a1. Therefore, by increasing the dimensions of the end face 3d1 of the cooling nozzle 3d, the cooling gas 3a1 can be guided to the peripheral region of the cleaning surface 100b without being drawn into the gap 2a2. As a result, the area to which the cooling gas 3a1 is properly guided can be increased. Therefore, it is possible to suppress the slowing of the flow velocity of the cooling gas 3a1 or the decrease in the amount of cooling gas 3a1 in contact with the back surface 100a below the peripheral region of the cleaning surface 100b. As a result, it becomes easier to lower the temperature in the peripheral region of the cleaning surface 100b to a predetermined temperature.

[0055] However, if the planar shape of the substrate 100 is a rectangle such as a square, the distance between the center of the substrate 100 and the corner of the substrate 100 becomes longer than the distance between the center of the substrate 100 and the side of the substrate 100. As a result, the flow velocity of the cooling gas 3a1 becomes even slower near the corners of the substrate 100, and the amount of cooling gas 3a1 in contact with the back surface 100a becomes even smaller. Also, as shown in Figure 2, it is difficult to provide the end face 3d1 of the cooling nozzle 3d near the corners of the substrate 100 when viewed from a direction along the central axis 2a4 of the mounting base 2a.

[0056] Therefore, a discharge section 2d is provided on the upper surface 2a3 (the surface on the side facing the substrate 100) of the mounting table 2a. The discharge section 2d discharges the cooling gas 3a1 flowing in the space between the cooling nozzle 3d and the substrate 100. As shown in Figures 1 and 2, when viewed from a direction along the central axis 2a4 of the mounting table 2a, the discharge section 2d is located opposite the vicinity of the corners of the substrate 100. The discharge section 2d serves as a discharge channel that guides the cooling gas 3a1 flowing in the space between the cooling nozzle 3d and the substrate 100, specifically the cooling gas flowing near the corners of the substrate, towards the corners of the substrate 100. In other words, the cooling gas 3a1 supplied from the hole 3d2 of the cooling nozzle 3d flows in the space between the end face 3d1 of the cooling nozzle 3d and the substrate 100 toward the periphery of the substrate 100. The cooling gas 3a1 that flows towards the periphery of the substrate 100 is discharged to the outside of the substrate 100 through the space between the upper surface 2a3 of the mounting base 2a and the substrate 100. At this time, a portion of the cooling gas 3a1 is guided to the corner of the substrate 100 via the discharge section 2d and discharged to the outside of the substrate 100 from the corner.

[0057] As shown in Figure 2, the discharge section 2d has, for example, a groove 2d1 (corresponding to an example of a first groove) and a groove 2d2 (corresponding to an example of a second groove). Groove 2d2 is connected to groove 2d1. For example, when viewed from a direction along the central axis 2a4 of the mounting base 2a, a pair of grooves 2d1 and 2d2 are provided at positions opposite to the vicinity of the corners of the substrate 100. Grooves 2d1 and 2d2 open to the upper surface 2a3 of the mounting base 2a. Groove 2d1 is provided on the side of the cooling nozzle 3d than groove 2d2. The end of groove 2d1 on the side of the cooling nozzle 3d opens to the inner wall of the hole 2a1. The end of groove 2d2 opposite to the side of the cooling nozzle 3d opens to the outer surface of the mounting base 2a.

[0058] In this case, the distance between the bottom surface of groove 2d1 and the back surface 100a of the substrate 100 is greater than the distance between the top surface 2a3 of the mounting base 2a and the back surface 100a of the substrate 100. The distance between the bottom surface of groove 2d2 and the back surface 100a of the substrate 100 is greater than the distance between the top surface 2a3 of the mounting base 2a and the back surface 100a of the substrate 100. In other words, the gap formed between the discharge section 2d (grooves 2d1 and 2d2) and the substrate 100 is wider than the gap formed between the rest of the mounting base 2a and the substrate 100. Therefore, the cooling gas 3a1 discharged from the cooling nozzle 3d flows more easily into the discharge section 2d.

[0059] In other words, if the discharge section 2d (grooves 2d1 and 2d2) is provided, it becomes easier to guide the cooling gas 3a1 to the vicinity of the corners of the substrate 100. If it becomes easier to guide the cooling gas 3a1 to the vicinity of the corners of the substrate 100, it is possible to suppress the slowing of the flow velocity of the cooling gas 3a1 and the reduction in the amount of cooling gas 3a1 that comes into contact with the back surface 100a of the substrate 100 in the vicinity of the corners of the substrate 100. As a result, it becomes easier to lower the temperature near the corners of the cleaning surface 100b of the substrate 100 to a predetermined temperature, and thus the removal rate of contaminants near the corners of the cleaning surface 100b can be improved.

[0060] In this case, increasing the depth and width of groove 2d1 reduces the pressure loss of the cooling gas 3a1 flowing through groove 2d1. Increasing the depth and width of groove 2d2 reduces the pressure loss of the cooling gas 3a1 flowing through groove 2d2. Therefore, the flow velocity and flow rate of the cooling gas 3a1 flowing through the discharge section 2d can be adjusted by changing the depth and width of groove 2d1 and groove 2d2. The depth dimension is the dimension perpendicular to the upper surface 2a3 of the mounting base 2a. The width dimension is the dimension perpendicular to the direction in which the discharge section 2d extends and parallel to the upper surface 2a3 of the mounting base 2a.

[0061] The depth and width dimensions of groove 2d1 and groove 2d2 may be the same or different. In this case, if at least one of the following is true, the depth dimension of groove 2d1 is greater than the depth dimension of groove 2d2, and the width dimension of groove 2d1 is greater than the width dimension of groove 2d2, it becomes easier to introduce the cooling gas 3a1 into the discharge section 2d.

[0062] Furthermore, as shown in Figure 2, the width dimension of the opening in the inner wall of the hole 2a1 of the groove 2d1 can be made larger than the width dimension of the opening in the outer surface of the mounting base 2a of the groove 2d2. This makes it easier to introduce the cooling gas 3a1 into the discharge section 2d.

[0063] Furthermore, the width of the groove 2d1 can be gradually reduced as it approaches the outer surface of the mounting base 2a. This allows for smoother flow of the cooling gas 3a1 in the groove 2d1. In this case, as shown in Figure 2, the side surface of the groove 2d1 can be a curved plane. Note that the side surface of the groove 2d1 may consist of at least one flat surface or at least one curved surface.

[0064] The width of the groove 2d2 can be gradually increased towards the outer surface of the mounting base 2a. This makes it easier to discharge the cooling gas 3a1 flowing through the groove 2d2.

[0065] Figures 3 and 4 are schematic cross-sectional views of the discharge section 2d in Figure 2 in the direction of the BB line. As shown in Figures 3 and 4, the depth dimension H1 of groove 2d1 can be made larger than the depth dimension H2 of groove 2d2. This makes it easier to introduce the cooling gas 3a1 into the discharge section 2d.

[0066] Furthermore, the depth dimension H2 of groove 2d2 may be smaller than the depth dimension H1 of groove 2d1. As mentioned above, the distance between the bottom surface of groove 2d2 and the back surface 100a of the substrate 100 is greater than the distance between the top surface 2a3 of the mounting base 2a and the back surface 100a of the substrate 100. Therefore, the flow rate of the cooling gas 3a1 flowing between the bottom surface of groove 2d2 and the back surface 100a of the substrate 100 is greater than the flow rate of the cooling gas 3a1 flowing between the top surface 2a3 of the mounting base 2a and the back surface 100a of the substrate 100. This makes it easier to discharge the cooling gas 3a1 near the corners of the substrate 100 to the outside of the substrate 100. If the discharge section 2d were formed only of groove 2d1, the cooling gas 3a1 introduced into the discharge section 2d would remain inside the discharge section 2d. The temperature of the cooling gas 3a1 introduced into the discharge section 2d is higher than the temperature of the cooling gas 3a1 discharged from the cooling nozzle 3d. Therefore, if the heated cooling gas 3a1 remains in the discharge section 2d, the cooling efficiency near the corners of the substrate 100 decreases. However, by providing grooves 2d2, the cooling gas 3a1 near the corners of the substrate 100 can be easily discharged to the outside of the substrate 100. As a result, the flow of cooling gas 3a1 from the cooling nozzle 3d to the discharge section 2d becomes smoother. Consequently, the cooling efficiency near the corners of the substrate 100 can be improved.

[0067] Furthermore, if the depth dimension H2 of groove 2d2 is smaller than the depth dimension H1 of groove 2d1, a flow of cooling gas 3a1 toward the back surface 100a of the substrate 100 can be formed at the boundary between groove 2d1 and groove 2d2. Therefore, cooling gas 3a1 can be generated that collides with the back surface 100a of the substrate 100. Consequently, the cooling efficiency near the corners of the back surface 100a of the substrate 100 can be further improved.

[0068] Note that the end of groove 2d2 opposite to the cooling nozzle 3d does not necessarily need to open to the outer surface of the mounting base 2a. The end of groove 2d2 opposite to the cooling nozzle 3d only needs to be sufficiently far from the corner of the substrate 100. For example, the end of groove 2d2 opposite to the cooling nozzle 3d may be provided between the corner of the substrate 100 and the outer surface of the mounting base 2a. In this case, it is preferable that the end of groove 2d2 opposite to the cooling nozzle 3d has an inclined surface such that its depth gradually decreases toward the outer surface of the mounting base 2a.

[0069] Furthermore, as shown in Figure 4, if the bottom surfaces of groove 2d1 and groove 2d2 are continuous, the flow of the cooling gas 3a1 becomes even smoother. Note that the bottom surfaces of groove 2d1 and groove 2d2 may be flat or curved.

[0070] Figure 5 is a schematic diagram illustrating a substrate processing apparatus 1a according to another embodiment. Figure 6 is a schematic diagram of the substrate processing apparatus 1a in Figure 5 as viewed from the direction of the A'-A' line. Figure 7 is a schematic cross-sectional view of the mounting section 2 in the direction of the EE line in Figure 6. Figure 8 is a schematic cross-sectional view of the discharge section 22d in the FF line direction in Figure 6. As shown in Figure 5, the substrate processing apparatus 1a according to this embodiment is similar to the substrate processing apparatus 1 according to the above-described embodiment in that it has a mounting table 2a and a cooling nozzle 3d, but differs in that the diameter of the cooling nozzle 3d and the hole 2a1 in the mounting table 2a are smaller. It also differs in that it has a discharge section 22d instead of a discharge section 2d.

[0071] As shown in Figure 6, the discharge section 22d has, for example, a groove 22d1 (corresponding to an example of a first groove) and a groove 2d2 (corresponding to an example of a second groove). In the above embodiment, the groove 2d1 connected to the groove 2d2 was divided into four by the hole 2a1 of the mounting base 2a. In this embodiment, the diameter of the hole 2a1 is small. Therefore, the grooves connected to the four grooves 22d2 are connected to a groove provided around the hole 2a1 and formed as a single groove 22d1. The groove 22d1 has a shape in which four grooves 2d1 are connected to a circular recess. The end of the groove 22d1 on the side of the cooling nozzle 3d opens to the inner wall of the hole 2a1 (see Figure 7). The end face 3d1 of the cooling nozzle 3d is provided inside the groove 22d1. For example, the bottom surface of the groove 22d1 and the end face 3d1 of the cooling nozzle 3d are at the same height in the direction along the central axis 2a4 of the mounting base 2a.

[0072] In this embodiment, the upper surface 2a3 of the mounting table 2a is positioned higher than the end face 3d1 of the cooling nozzle 3d in the direction along the central axis 2a4 of the mounting table 2a. In other words, compared to the substrate processing apparatus 1 illustrated in Figure 1, the end face 3d1 of the cooling nozzle 3d is positioned lower. Therefore, the inner wall 22d1a of the groove 22d1 (hereinafter simply referred to as the inner wall 22d1a of the groove 22d1) provided at the periphery of the edge of the substrate 100 has the role of reducing the amount of cooling gas 3a1 flowing from the periphery of the edge of the substrate 100 to the outside of the substrate 100. The inner wall 22d1a of the groove 22d1 also has the role of guiding the cooling gas 3a1 that has flowed to the periphery of the edge of the substrate 100 to the vicinity of the corner of the substrate 100 (see the curved arrow in Figure 6). Therefore, the substrate processing apparatus 1a according to this embodiment makes it easier to lower the temperature near the corners of the cleaning surface 100b of the substrate 100 to a predetermined temperature compared to the substrate processing apparatus 1 according to the above-described embodiment. As a result, the removal rate of contaminants near the corners of the cleaning surface 100b can be improved. Furthermore, "the periphery of the edges of the substrate 100" refers to the portion of the substrate's periphery corresponding to an edge, excluding the part closest to the corner.

[0073] Incidentally, a gap 2a2 is provided between the cooling nozzle 3d and the inner wall 22d1a of the groove 22d1. Therefore, there is a risk that some of the cooling gas 3a1 directed toward the inner wall 22d1a of the groove 22d1 may be drawn into the gap 2a2. If the gap 2a2 is provided in close proximity to the inner wall 22d1a of the groove 22d1, some of the cooling gas 3a1 that collides with the inner wall 22d1a of the groove 22d1 will be more easily drawn into the gap 2a2. As a result, the amount of cooling gas 3a1 guided toward the corners of the substrate 100 decreases. Therefore, it is preferable to separate the gap 2a2 from the inner wall 22d1a of the groove 22d1. It is preferable to separate the gap 2a2 from the inner wall 22d1a of the groove 22d1 at least 5 mm.

[0074] As shown in Figure 8, the cooling gas 3a1 that collides with the inner wall 22d1a of the groove 22d1 is guided by the inner wall 22d1a of the groove 22d1 to the vicinity of the corner of the substrate 100. As a result, the amount of cooling gas 3a1 supplied to the vicinity of the corner of the substrate 100 increases. Therefore, it becomes easier to lower the temperature of the cleaning surface 100b of the substrate 100 to the vicinity of the corner to a predetermined temperature. As a result, the removal rate of contaminants near the corner of the cleaning surface 100b can be improved.

[0075] Figure 9 is a schematic diagram illustrating an example of a discharge section 12d according to another embodiment. Note that Figure 9 is explained using the substrate processing apparatus 1 as an example. Figure 10 is a schematic cross-sectional view of the discharge section 12d in the CC line direction in Figure 9. As shown in Figure 9, when viewed from a direction along the central axis 2a4 of the mounting base 2a, the discharge section 12d is located opposite the vicinity of the corner of the substrate 100. Similar to the discharge section 2d described above, the discharge section 12d serves as a discharge channel for the cooling gas 3a1 flowing in the space between the cooling nozzle 3d and the substrate 100.

[0076] As shown in Figures 9 and 10, the discharge section 12d has, for example, a groove 2d1 and a hole 12d1 (corresponding to an example of a second hole). The discharge section 12d according to this embodiment is similar to the discharge section 2d according to the above embodiment in that it has a groove 2d1, but differs in that it has a hole 12d1 instead of a groove 2d2. For example, when viewed from a direction along the central axis 2a4 of the mounting base 2a, a pair of grooves 2d1 and holes 12d1 are provided at positions opposite to the vicinity of the corners of the substrate 100. The groove 2d1 opens to the upper surface 2a3 of the mounting base 2a and to the inner wall of the hole 2a1. When viewed from a direction along the central axis 2a4 of the mounting base 2a, the hole 12d1 is connected to the vicinity of the end of the groove 2d1 opposite to the side of the cooling nozzle 3d. The hole 12d1 penetrates the mounting base 2a in a direction along the central axis 2a4 of the mounting base 2a. For example, one end of hole 12d1 opens to the bottom surface of groove 2d1. The other end of hole 12d1 opens to the end of mounting base 2a opposite to the substrate 100 side.

[0077] The cooling gas 3a1 supplied from the hole 3d2 of the cooling nozzle 3d flows towards the periphery of the substrate 100 through the space between the end face 3d1 of the cooling nozzle 3d and the substrate 100. The cooling gas 3a1 that has flowed towards the periphery of the substrate 100 is discharged to the outside of the substrate 100 through the space between the upper surface 2a3 of the mounting base 2a and the substrate 100. At this time, a portion of the cooling gas 3a1 is discharged below the mounting base 2a through the discharge section 12d.

[0078] Viewed from a direction along the central axis 2a4 of the mounting table 2a, the hole 12d1 may be located on the outside of the substrate 100, a portion of the hole 12d1 may overlap with the substrate 100, or the hole 12d1 may be located in a position that overlaps with the substrate 100 (on the inside of the substrate 100). However, if the liquid 101 discharged from the cleaning surface 100b of the substrate 100 enters the inside of the hole 12d1, the liquid may freeze inside the hole 12d1 due to the cooling gas 3a1. If the liquid freezes inside the hole 12d1, it will be difficult to discharge the cooling gas 3a1 through the hole 12d1. Also, if the liquid 101 flows out below the mounting table 2a through the hole 12d1, the liquid may freeze below the mounting table 2a. If the liquid freezes below the mounting table 2a, the rotation of the mounting table 2a may be hindered. Furthermore, if the component located below the mounting base 2a freezes, it can cause malfunctions.

[0079] In this case, as shown in Figure 9, if the hole 12d1 is located in a position that overlaps with the substrate 100 (inside the substrate 100) when viewed from a direction along the central axis 2a4 of the mounting base 2a, it is possible to prevent the liquid 101 discharged from the cleaning surface 100b of the substrate 100 from entering the inside of the hole 12d1. Therefore, it is possible to prevent malfunctions from occurring due to the liquid freezing inside the hole 12d1 or below the mounting base 2a. Figure 9 illustrates the substrate processing apparatus 1 as an example. However, it goes without saying that holes 12d1 can be used instead of grooves 2d2 in the substrate processing apparatus 1a.

[0080] Next, we will further explain the dimensions of the end face 3d1 of the cooling nozzle 3d and the position of the end face 3d1. As mentioned above, the space between the end face 3d1 of the cooling nozzle 3d and the substrate 100 becomes a flow path for the cooling gas 3a1. Therefore, by increasing the dimensions of the end face 3d1 of the cooling nozzle 3d, the area to which the cooling gas 3a1 is guided to the peripheral region of the cleaning surface 100b without being drawn into the gap 2a2 can be increased. If the area to which the cooling gas 3a1 is guided to the peripheral region of the cleaning surface 100b is increased, the cooling gas 3a1 will reach below the peripheral region of the substrate 100 more easily. In addition, since the cooling nozzle 3d does not rotate, the cooling gas 3a1 flowing between the substrate 100 and the end face 3d1 is agitated by the relative movement between the rotating substrate 100 and the cooling nozzle 3d. If the width dimension of the end face 3d1 is increased, the amount of agitated cooling gas 3a1 can be increased, so unevenness in the flow rate distribution of the cooling gas 3a1 can be suppressed.

[0081] Therefore, by increasing the dimensions of the end face 3d1 of the cooling nozzle 3d, it becomes easier to lower the temperature in the peripheral region of the cleaning surface 100b of the substrate 100 to a predetermined temperature. If the temperature in the peripheral region of the cleaning surface 100b can be lowered to a predetermined temperature, the removal rate of contaminants in the peripheral region of the cleaning surface 100b can be improved.

[0082] In this case, if the dimension of the end face 3d1 of the cooling nozzle 3d is D (mm) and the length of one side of the square substrate 100 is L (mm), then setting "D ≥ L / 4" can improve the removal rate of contaminants in the peripheral region of the cleaning surface 100b of the substrate 100. In this case, the larger D (mm) is, the better the removal rate of contaminants in the peripheral region of the cleaning surface 100b of the substrate 100.

[0083] For example, as shown in Figure 2, if "D = L" is set in the substrate processing apparatus 1, the removal rate of contaminants in the peripheral region of the cleaning surface 100b of the substrate 100 can be significantly improved. That is, "L / 4 ≤ D ≤ L" should be set. In this case, it is preferable that D is close to L. Furthermore, as shown in Figure 6, if "D = L - 5" is set in the substrate processing apparatus 1a, the removal rate of contaminants in the peripheral region of the cleaning surface 100b of the substrate 100 can be significantly improved. That is, "L / 4 ≤ D ≤ L - 5" should be set.

[0084] Furthermore, as mentioned above, the cooling gas 3a1 may be drawn into the gap 2a2. In particular, if the inner edge of the gap 2a2 is lower than the outer edge of the gap 2a2 in the direction along the central axis 2a4 of the mounting base 2a, the cooling gas 3a1 is more likely to be drawn into the gap 2a2 when it flows out from the end face 3d1 of the cooling nozzle 3d. For example, if the end face 3d1 of the cooling nozzle 3d, which corresponds to the inner edge of the gap 2a2, is located on the opposite side from the substrate 100 from the upper surface 2a3 of the mounting base 2a, groove 2d1 or groove 22d1, which corresponds to the outer edge of the gap 2a2, the cooling gas 3a1 that has flowed through the space between the end face 3d1 of the cooling nozzle 3d and the back surface 100a of the substrate 100 is more likely to be drawn into the gap 2a2 when it flows out from the end face 3d1 of the cooling nozzle 3d. If the cooling gas 3a1 is drawn into the gap 2a2, the liquid 101 that has entered the gap 2a2 may freeze, or the components located below the mounting base 2a may freeze. If the liquid 101 freezes in the gap 2a2, the rotation of the mounting base 2a may be hindered. If the components located below the mounting base 2a freeze, it may cause a malfunction.

[0085] Therefore, it is preferable that the end face 3d1 of the cooling nozzle 3d is flush with the upper surface 2a3 of the mounting base 2a (see, for example, Figure 1). In this way, the cooling gas 3a1 that has flowed through the space between the end face 3d1 of the cooling nozzle 3d and the back surface 100a of the substrate 100 is less likely to be drawn into the gap 2a2 when it flows out to the outside of the end face 3d1 of the cooling nozzle 3d.

[0086] Furthermore, it is even more preferable that the end face 3d1 of the cooling nozzle 3d is located closer to the substrate 100 than the upper surface 2a3 of the mounting base 2a (see, for example, Figures 11 and 12). In this way, as described above, the cooling gas 3a1 flowing out to the outside of the end face 3d1 of the cooling nozzle 3d is less likely to be drawn into the gap 2a2. In addition, this makes it possible to further increase the flow velocity of the cooling gas 3a1 or to further increase the amount of cooling gas 3a1 in contact with the back surface 100a of the substrate 100. As a result, the removal rate of contaminants in the peripheral region of the substrate 100 can be further improved.

[0087] Figure 11 is a schematic cross-sectional view illustrating a cooling nozzle 13d according to another embodiment. As shown in Figure 11, the end face 13d1 of the cooling nozzle 13d can also be curved. In this way, compared to the nozzle 3d described above, the dispersion of the cooling gas 3a1 can be started at a position further away from the back surface 100a of the substrate 100. Therefore, it is possible to suppress the temperature of the central region of the substrate 100 from becoming excessively low.

[0088] Figure 12 is a schematic cross-sectional view illustrating a cooling nozzle 23d according to another embodiment. As shown in Figure 12, the end face 23d1 of the cooling nozzle 23d can have multiple inclined surfaces. In this case, the angle between adjacent inclined surfaces is preferably about 3.5° to 4°. Even in this case, compared to the nozzle 3d described above, the dispersion of the cooling gas 3a1 can be started at a position further away from the back surface 100a of the substrate 100. Therefore, it is possible to suppress the temperature of the central region of the substrate 100 from becoming excessively low.

[0089] The embodiments described above are illustrative examples. However, the present invention is not limited to these descriptions. With respect to the embodiments described above, those who are skilled in the art may add, delete, or modify components, or add, omit, or change processes as appropriate, and these are also included within the scope of the present invention as long as they retain the features of the present invention.

[0090] For example, the shape, dimensions, number, and arrangement of each element of the substrate processing apparatus 1 are not limited to those exemplified and can be changed as appropriate. [Explanation of Symbols]

[0091] 1 Substrate processing apparatus, 2 Mounting section, 2a Mounting platform, 2a3 Top surface, 2a4 Central axis, 2d Discharge section, 2d1 Groove, 2d2 Groove, 3 Cooling section, 3a1 Cooling gas, 3d Cooling nozzle, 3d1 End face, 4 Liquid supply section, 12d Discharge section, 12d1 Hole, 13d Cooling nozzle, 23d Cooling nozzle, 100 Substrate, 100a Back surface, 100b Cleaning surface, 101 Liquid

Claims

1. A mounting table capable of rotating a substrate having a cornered planar shape; a liquid supply unit capable of supplying liquid to a surface of the substrate opposite to the mounting table; a cooling nozzle provided inside a first hole penetrating the mounting table along a central axis of the mounting table, the cooling nozzle being capable of supplying a cooling gas to a space between the substrate and the cooling nozzle; Equipped with A substrate processing apparatus having an exhaust section for exhausting the cooling gas flowing through the space between the cooling nozzle and the substrate, at a position on the substrate-side surface of the mounting table facing the corners of the substrate and their vicinity when viewed from a direction along the central axis of the mounting table.

2. The substrate processing apparatus according to claim 1 , wherein the planar shape of the substrate is rectangular.

3. The discharge portion has a first groove and a second groove connected to the first groove, the first groove opens to a surface of the mounting table facing the substrate and to an inner wall of the first hole; 3 . The substrate processing apparatus according to claim 1 , wherein the second groove is open to a surface of the stage facing the substrate and to an outer surface of the stage.

4. The first groove has a depth dimension greater than the second groove depth dimension; and 4. The substrate processing apparatus according to claim 3, wherein a width dimension of the first groove is larger than a width dimension of the second groove.

5. 5 . The substrate processing apparatus according to claim 3 , wherein a width dimension of an opening of the first groove on an inner wall of the first hole is larger than a width dimension of an opening of the second groove on an outer surface of the mounting table.

6. the discharge portion has a first groove and a second hole connected to a vicinity of an end of the first groove opposite to the cooling nozzle side, the first groove opens to a surface of the mounting table facing the substrate and to an inner wall of the first hole; 3 . The substrate processing apparatus according to claim 1 , wherein the second hole penetrates the mounting table in a direction along a central axis of the mounting table.

7. The substrate processing apparatus according to claim 6 , wherein the second hole is provided at a position overlapping with the substrate when viewed from a direction along a central axis of the mounting table.

8. The planar shape of the substrate is a square, 8. The substrate processing apparatus according to claim 1, wherein the following formula is satisfied, where D is the dimension of the end face of the cooling nozzle facing the substrate, and L is the length of one side of the substrate: L / 4≦D≦L

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