Method and apparatus for mask repair

Abstract

To provide a method, apparatus and computer program for processing of a lithography object.SOLUTION: The present disclosure relates to a method, apparatus and computer program for processing of a lithography object. More specifically, the present invention relates to a method for removing a material, to a corresponding apparatus, to a method for lithographic processing of a wafer, and to a computer program for implementing the methods. A method for processing a lithography object comprises, for example: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region based at least partly on the first gas, where the first material comprises ruthenium.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This patent application claims priority to German patent application DE102022202803.1, titled "Verfahren und Vorrichtung zur Maskenreparatur" (Repair and Preparation of Mask Repair), filed with the German Patent and Trade Mark Office on 22 March 2022. German patent application DE102022202803.1 is incorporated in its entirety by reference. This patent application further claims priority to German patent application DE102022210492.7, titled "Verfahren und Vorrichtung zur Maskenreparatur" (Repair and Preparation of Mask Repair), filed with the German Patent and Trade Mark Office on 4 October 2022. German patent application DE102022210492.7 is incorporated in its entirety by reference.

[0002] The present invention relates to a method, apparatus, and computer program for processing lithographic objects. More specifically, the present invention relates to a method for removing material, a corresponding apparatus, a method for lithographic processing of wafers, and a computer program for carrying out the method. [Background technology]

[0003] In the semiconductor industry, integration density is steadily increasing as the structures generated on wafers become smaller and smaller. Among the methods used to generate these structures is lithography, which images these structures onto the wafer. Lithographic methods can include, for example, photolithography, ultraviolet (UV) lithography, DUV lithography (i.e., lithography in the deep ultraviolet spectral region), EUV lithography (i.e., lithography in the extreme ultraviolet spectral region), X-ray lithography, and nanoimprint lithography. A mask is typically used here as the object to be lithographed (e.g., a photomask, exposure mask, reticle, or stamp in the case of nanoimprint lithography), which includes, for example, a pattern for imaging the desired structure onto the wafer.

[0004] During lithographic processes, masks can be subjected to high physical and chemical stresses (e.g., mask exposure, mask cleaning). Therefore, a high demand for the stability of mask materials arises. Over time, specific mask materials have been established for specific mask structures (e.g., tantalum or chromium for radiation-absorbing and / or phase-shifting mask structures). For example, mask materials can be designed so that thin absorbers and / or specific phase-shifting properties of the mask structure exist within the mask. However, as technological advancements in lithography progress, the demands on mask materials can become even more intense. Nevertheless, the production of alternative mask materials and masks based on them has recently been explored in the field of lithography to ensure that resistant mask materials reliably possess, for example, radiation-absorbing and / or phase-shifting properties.

[0005] For example, U.S. Patent Application Publication No. 2021 / 0223681 relates to the production of a reflective mask that can further reduce the shadowing effect of the reflective mask and can form a fine, extremely accurate phase-shift pattern. This comprises a substrate, a reflective multilayer film, and a phase-shift film. The phase-shift film has a first layer and a second layer. The first layer comprises a material containing at least one of the following: tantalum and chromium. The second layer comprises a metal-containing material containing ruthenium and at least one of the following: chromium, nickel, cobalt, vanadium, niobium, molybdenum, tungsten, and rhenium. In one configuration, a protective layer is included between the reflective multilayer and the phase-shift film, the protective layer contains ruthenium, and the first and second layers are layered on top of the protective layer in their arrangement.

[0006] U.S. Patent No. 10481484 concerns the production of a reflective mask including a reflective multilayer film, a protective film, and a phase-shift film, which are formed on a substrate in their arrangement. The protective film is made from a material containing ruthenium as its main component, and an anti-diffusion layer containing ruthenium and oxygen. The anti-diffusion layer is formed on one surface of the protective film or as part of the protective film on a side adjacent to the phase-shift film, thereby preventing thermal diffusion between the protective film and the material of the phase-shift film.

[0007] International Application No. 2021 / 100383 discloses a reflective mask blank having a phase-shift film, wherein the change in the phase difference and / or reflectivity of the phase-shift film is small, even if the thickness of the phase-shift film changes. The reflective mask blank is provided on the main surface of a substrate, and the reflective multilayer film and phase-shift film are provided in a specified arrangement. The reflective mask blank is characterized in that the phase-shift film has an underlayer and an uppermost layer, with the underlayer positioned between the uppermost layer and the multilayer reflective film. The underlayer is formed from a material having a total ruthenium and chromium content of 90 atomic percent or more, or a material having a total ruthenium, chromium and nitrogen content of 90 atomic percent or more. The uppermost layer is formed from a material having a total ruthenium, chromium and oxygen content of 90 atomic percent or more. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] U.S. Patent Application Publication No. 2021 / 0223681 [Patent Document 2] U.S. Patent No. 10481484 [Patent Document 3] International Application No. 2021 / 100383 [Overview of the project]

[0009] However, since mask defects are generally unavoidable in the production of complex masks, mask materials can also create (localized) mask defects (e.g., defects, excess material, deformed material, particle overlap, etc.) on the mask. However, existing methods for mask repair have been designed exclusively for industrially established mask materials. Therefore, there is a very high demand for the production of masks using novel materials.

[0010] Therefore, the objective of the present invention is to improve this situation.

[0011] This objective is achieved, at least partially, by various embodiments of the present invention.

[0012] A first aspect of the present invention relates to a method for processing a lithographic object. In the first aspect, the method includes the step of providing a first gas containing a first molecule. The method further includes the step of providing a particle beam into the working region of the object to remove a first material in the working region, at least partially based on the first gas, wherein the first material includes ruthenium.

[0013] This invention addresses the problem of removing material on a lithographic object that is designed to be resistant to removal under chemical and / or physical stress.

[0014] In order to properly address the current and future demands in lithography, there has been recent discussion about whether the structures of lithographic objects should be made from ruthenium-containing materials. Thanks to ruthenium-containing materials, the structures formed therefrom can have higher chemical stability in the object for the demands of lithography. The structure of the object can include, for example, a three-dimensionally designed shape with respect to length, width and / or height, topological steps, rise, depression, or any topological error with respect to the flat surfaces of the object. For example, ruthenium-containing material can occupy at least one layer of the structure in an object for lithography.

[0015] The ruthenium-containing material can be specifically designed to explicitly prevent the removal of the first material under chemical / physical influences. The ruthenium-containing material can also be designed here to prevent the removal / wear of the mask structure formed thereon, even under sustained or periodic chemical / physical stresses. The ruthenium-containing material can be designed, for example, for the extreme conditions of lithography methods, and the object will be used for lithography under these extreme conditions. For example, the object can be exposed to (damaging) plasma during the lithography method. For example, it may also be necessary to expose the object to a hydrogen environment (e.g., for defect prevention) by the lithography method. In the case of exposing the object to lithography, there may be the emission of a (parasitic) highly reactive hydrogen plasma having free hydrogen radicals that can act on the material of the object. The plasma constitutes a high degree of chemical / physical stress on the object and may cause material removal and damage to the material of the object (e.g., in a manner similar to plasma etching). However, the material removal effect is undesirable in the lithography object because it can adversely affect the characteristics of the object and thus the quality of the lithography method. Therefore, the ruthenium-containing material of the corresponding mask structure is (explicitly) designed such that the first material has a high resistance to the material removal effect of the plasma (e.g., especially a highly reactive hydrogen plasma). Furthermore, since the object can be under the influence of many other mechanical / chemical effects in lithography, this can damage the object (e.g., in combination with the action of the plasma). For example, other damaging effects can include severe temperature fluctuations, exposure to radiation, and chemical reactions of the object with the purge gas. Therefore, the ruthenium-containing material can usually be designed to basically counteract the total adverse removal effect of the material in lithography so that the mechanical / chemical wear and removal of the ruthenium-containing material become more difficult.

[0016] The inventors recognize that such ruthenium-containing materials can be removed using a particle beam-induced method to correct any defects caused by excess material. Therefore, the basis of the present invention lies in removing materials that are specifically designed to be resistant to removal via a particle beam-based process. The inventors here encountered the unexpected discovery that ruthenium-containing materials in a lithographic object can be removed with the help of a provided gas and a provided particle beam (e.g., via particle beam-induced etching). This was a surprising discovery for the inventors because they could not have predicted that the first material (resistant to the invasive conditions of lithography) could be processed, or even removed (e.g., without the use of plasma), by a particle beam-based method. Additionally, it was difficult for the inventors to reach this discovery because, according to common opinion, ruthenium has long been known as an inremovable protective layer in lithographic objects to protect the underlying layers during etching (particle beam-based) processes. Furthermore, considering a resistant (ruthenium-containing) first material, the inventors did not anticipate that, in the case of particle beam-based removal of the first material, it would be sufficient to provide a gas containing the first molecule. According to the present invention, it is not necessarily required to rely on complex gas mixtures (e.g., gas mixtures containing different types of molecules designed for resistant materials). This reduces the complexity in particle beam reduction removal and, as a result, ensures simpler processing control of the method according to the present invention (for example, providing a single gas requires less technical implementation than providing a gas mixture of two or more different gases). Therefore, the present invention enables the processing of lithographic objects having a mask structure made of a ruthenium-containing material (resistant).The first material can be designed, for example, such that it can withstand at least 20, at least 50, at least 100, or even at least 1000 cleaning cycles, essentially without change, in a (UV, such as EUV or DUV) mask cleaning operation (e.g., in the case of a mask having the first material as part of a pattern element of the mask, such that no printable error is caused by the cleaning cycles).

[0017] The lithography object described herein can, in this case, include a lithography mask. The lithography mask can be designed to be used in lithography for the production of semiconductor-based chips (e.g., by exposure of a semiconductor-based wafer). The lithography mask can also include any type of lithography mask that can form an image based on an electromagnetic radiation source (of any wavelength) and the pattern incorporated in the lithography mask. The image can include a conversion of the pattern. The lithography mask can include, for example, EUV masks, DUV masks, UV masks, X-ray lithography masks, binary masks, phase shift masks, etc. In addition, the lithography mask can also include nanoimprint lithography stamps or lithography masks that can form an image of the pattern based on a particle source.

[0018] In one example, in the method of the first embodiment, the first material (only) is partially removed within the working region. For example, the method can be performed in such a manner that the first material remains in the working region after the (partial) removal of the first material. For example, the method (described herein) can remove a substantial portion of the first material within the working region. This may include, for example, removing one or more layers of the first material. In further examples, the removal can generate topological steps of the first material (e.g., local depressions, edges, etc.). The removal (described herein) can be considered a controlled and effective removal of the material, as opposed to a purely surface conditioning operation or roughening of the first material (e.g., which may occur if the first material is used as an etching stop layer). For example, the removal can be performed over a depth of at least 10 nm, at least 20 nm, or at least 25 nm.

[0019] The working region as defined herein may include a local area of ​​the lithography object. However, it is also conceivable that the working region encompasses the entire lithography object. The working region may also include any area dimension, shape, and / or (three-dimensional) shape. For example, the working region may be within the size associated with a particular measurement of the object. For example, a particular measurement may include a limiting dimension CD of the pattern elements of the object. The pattern elements here may include, for example, a part of a mask structure, a part of a layer of a mask structure, and / or the mask structure itself. The limiting dimension CD may include, for example, a defined structure having pattern elements, or a defined distance between two (characteristic) pattern elements. The working region may form a region A over the limiting dimension CV of the pattern elements (for example, A may correspond to a function of the limiting dimension CV, where A = f(CD), for example, A may be proportional to the limiting dimension). In addition, the first material may be removed within the working region such that the first material is not necessarily removed over the entire working region, but is removed (locally) in a small region of the working region. Alternatively, removal within the working region may be performed so that the first material is removed over the entire working region. In addition, the first gas may be supplied in a controlled manner within a sub-region of the working region (e.g., via a locally positionable gas conduit having a gas nozzle). It is also possible to direct the supplied particle beam to a sub-region of the working region so that the particles of the particle beam are incident on the sub-region. In addition, the method may include controlled local control and / or focusing the particle beam within the sub-region or working region (e.g., to locally control the reaction of particle beam-induced etching).

[0020] In one example, in the method of the first embodiment, the first material is completely removed from the working area. For example, it is possible by the means of the method that, after removal, the first material is no longer present in the working area. Thus, the first material can also be removed by the means of the method without leaving any residue.

[0021] In one example, in the method of the first embodiment, the first material is capable of absorbing radiation associated with an object. For example, this radiation associated with the object may include electromagnetic radiation having a specific wavelength, which can be used in a lithography method (for which the object is designed). For example, the radiation associated with the object may correspond to the exposure radiation to the object in a lithography method. The specific wavelength of the exposure radiation can be considered as the lithography wavelength of the object. In one example, the lithography object includes an EUV mask for EUV lithography, and the lithography wavelength (i.e., the wavelength of the exposure radiation) in this case may be 13.5 nm. In addition, the radiation may relate to, depending on the object, for example, DUV lithography (e.g., lithography wavelength 193 nm or 248 nm), i-line lithography (e.g., lithography wavelength 365 nm), or any other lithography method (e.g., different lithography wavelengths).

[0022] In one example, the first material has intrinsic material parameters (e.g., absorption coefficient, magnitude of absorption, imaginary part of refractive index) that can be used to conclude significant (e.g., high) absorption of the object at the lithography wavelength. In one example, the absorption coefficient k of the first material can be at least 0.01, 0.015, or at least 0.018 (or, for example, between 0.01 and 0.02 or between 0.015 and 0.18). It can similarly be assumed that significant absorption can be defined through the (low) reflectance of the first material. For example, the reflectance of the first material (e.g., in the lithography wavelength region) can be 25 percent or less, preferably 20 percent or less, more preferably 17 percent or less. In addition, the first material can include materials that are normally present in the object to absorb the lithography wavelength (e.g., materials corresponding to the absorption layer of the object (e.g., pattern elements)).

[0023] In a further example, the first material has no inherent material parameters of its own that can be used to conclude significant absorption. In addition, the first material can be geometrically constructed so that it can effectively absorb radiation associated with the object within a local region of the object. For example, the first material can be geometrically formed within a (local) region of the object so that it causes significant absorption of radiation at the lithography wavelength through its absorbing material properties and geometric structure. In this case, the first material within the (local) region can make an image contribution in the lithography method because there is actual (i.e., effective) absorption of radiation at the lithography wavelength. The shape of the first material can be defined, for example, through the thickness of the material layer or through the distance covered by radiation at the lithography wavelength in the lithography method through the first material (e.g., absorption distance). The absorption distance can take into account, for example, the optical diffraction of radiation at the lithography wavelength or the vector of the occurrence rate of exposed radiation. For example, the method may include not removing an extremely thin layer of absorbing material (i.e., a material that inherently absorbs) because, geometrically, the thin layer cannot significantly absorb radiation at the lithography wavelength and therefore does not contribute to actual (i.e., effective) imaging in the corresponding lithography method. For example, significant absorption can be defined or calculated by the thickness or absorption distance of the first material: the thickness of the first material can be at least 20 nm, preferably at least 35 nm, more preferably at least 50 nm, and most preferably at least 60 nm. Alternatively, the thickness of the first material can be less than 60 nm, for example, less than 50 nm or less than 35 nm. Significant absorption can also be expressed in terms of the intensity of radiation at the lithography wavelength being attenuated by 70%, preferably 80%, and most preferably 90% in the lithography method (e.g., across the entire first material).

[0024] In one example, in the method of the first embodiment, the first material corresponds to the layer material of the pattern elements of the object (e.g., a mask). The first material can take the form of the layer material of the pattern elements. In one example, in the method, the layer material corresponds to the material of the absorption layer of the pattern elements. The absorption layer may include the positions of the pattern elements explicitly positioned to absorb radiation of the lithography wavelength. The (ruthenium-containing) first material can, for example, be designed to allow for an absorption layer with a low layer thickness. In addition, the (ruthenium-containing) first material can also be designed to allow for, for example, a phase shift characteristic of the layers of the structure of the lithography object.

[0025] In one example, in the method of the first embodiment, the first material further comprises at least a second element. The second element can here be considered as part of any substance contained in the first material (i.e., the second element can constitute part of, for example, cohesive bonds, chemical elements, etc.). Thus, the first material does not necessarily have to be formed entirely of ruthenium. The first material also here comprises Ru, where a>0, b≧0. a Z b It can be written in the form (where Z represents at least a second element (or one or more further chemical elements)) (stoichiometrically).

[0026] In a further example, the first material can be formed primarily from ruthenium. For instance, the ruthenium content of the first material may include at least 50 atomic percent (at%), at least 70 atomic percent, at least 80 atomic percent, or at least 90 atomic percent.

[0027] The unit “atomic percentage” as used herein can refer here to the molar ratio of the corresponding materials, and atomic percentage indicates the relative number of particles (e.g., ruthenium atoms) in relation to the total number of particles of a substance (e.g., the total number of atoms of the first material). Atomic percentage can be detected, for example, by secondary ion mass spectrometry, SIMS, and / or auger electron spectroscopy and / or X-ray photoelectron spectroscopy, XPS (also, for example, by photoelectron spectroscopy, PES).

[0028] The methods of the first embodiment described herein can also be assumed to be based on different ruthenium content of the first material, for example, a ruthenium content of <50 atomic percent or <10 atomic percent, otherwise <1 atomic percent, and / or a ruthenium content of at least 10 atomic percent or at least 25 atomic percent.

[0029] In one example, in the method of the first embodiment, the second element includes at least one of the following: metals and semiconductors. Similarly, combinations of metals and semiconductors are also possible.

[0030] Metals can include, for example, heavy metals, light metals, transition metals, precious metals, base metals, and / or metal alloys. Metals can include, for example, at least one of the following: niobium (Nb), zirconium (Zr), yttrium (Y), titanium (Ti), lanthanum (La), molybdenum (Mo), cobalt (Co), and / or rhenium (Re). In addition, metals can include at least one of the following: tungsten (W), hafnium (Hf), nickel (Ni), vanadium (V), rhodium (Rh), platinum (Pt), chromium (Cr), and / or palladium (Pd).

[0031] In one example, semiconductors include metalloids and / or compound semiconductors. Semiconductors can here include direct bandgap semiconductors and / or indirect bandgap semiconductors. For example, semiconductors can include at least one of the following: silicon (Si), germanium (Ge), boron (B), arsenic (As), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), silicon carbide (SiC), and gallium nitride (GaN).

[0032] Similarly, it can be assumed that the second element may be a nonmetal. For example, nonmetals may include at least one of the following: oxygen, nitrogen, phosphorus, hydrogen, carbon, and halogens (e.g., bromine, fluorine, chlorine, etc.).

[0033] In one example, in the method of the first embodiment, the second element includes at least one of the following: tantalum, chromium, nitrogen, and oxygen. In a preferred example, the first material includes ruthenium and oxygen. In a more preferred example, the first material includes ruthenium, chromium, and oxygen. In a still more preferred example, the first material includes ruthenium and tantalum.

[0034] In one example, in the method of the first embodiment, ruthenium forms a chemical compound having a second element (or having at least one second element). The chemical compound may, for example, be a two-component, three-component, and / or four-component chemical compound. In a preferred example, the chemical compound includes ruthenium oxide (e.g., RuO). In a more preferred example, the chemical compound includes a ruthenium-tantalum compound (e.g., RuTa). It is also possible that the chemical compound includes ruthenium nitride. In addition, at least one of the following two-component chemical compounds may be considered as a chemical compound: RuCr, RuNi, RuCo. In a further example, at least one of the following three-component chemical compounds may be considered as a chemical compound: RuCrNi, RuCrCo, RuNiCo. In a further example, at least one of the following four-component chemical compounds may be considered as a chemical compound: RuCrNiCo.

[0035] In one example, in the method of the first embodiment, the method is carried out in such a manner that a second material (or otherwise placed beneath) which may be adjacent to the first material is at least partially exposed within the working area by removal. Here, the surface of the second material can be exposed by removal of the first material (as described herein). The second material may be, for example, a material of a layer adjacent to the first material.

[0036] In one example, in the method of the first embodiment, the first material and the second material differ in at least one element (or substance). For example, in this regard, the second material may contain substance B, which is not a component of the first material. In a preferred example, the second material does not contain ruthenium and / or at least a second element (as described herein). In a further example, the second material may contain substance A and substance B, where substance A is a component of the first material (e.g., at least one second element and / or ruthenium) and substance B is not a component of the first material (e.g., ruthenium or at least one second element). Furthermore, the first and second materials may be physically separated (i.e., no substance in the first material corresponds to any substance contained in the second material). For example, in this regard, the first material may consist not only of ruthenium but also of substances C and D, in which case the second material may consist (exclusively) of substances E and F such that none of the substances in the first material correspond to any of the substances in the second material.

[0037] In one example, in the method of the first embodiment, the second material includes tantalum and / or a tantalum compound. The tantalum compound may include, for example, tantalum nitride, tantalum oxide, tantalum oxynitride and / or a ruthenium-tantalum compound.

[0038] The second material may also additionally include any metal and / or any semiconductor. The metals may include, for example, heavy metals, light metals, transition metals, noble metals, base metals and / or metallic alloys. For example, the second material may also additionally include boron and / or arsenic.

[0039] The second material can similarly be assumed to contain nonmetals that do not necessarily have to constitute part of the tantalum compound. For example, the nonmetals may include at least one of the following: oxygen, nitrogen, phosphorus, hydrogen, carbon, and halogens (e.g., bromine, fluorine, chlorine, etc.).

[0040] In one example, the second material comprises tantalum and oxygen. In a preferred example, the second material comprises tantalum, oxygen, and boron. In a more preferred example, the second material comprises tantalum, oxygen, and nitrogen.

[0041] It should be noted that the second material is not necessarily limited to tantalum and / or tantalum compounds. Any metal and / or any semiconductor can be additionally considered, rather than tantalum and / or tantalum compounds. Furthermore, the second material can also include oxides and / or nitrides in general.

[0042] In one example, the second material can function as a removal stop (e.g., an etching stop) for removing the first material. In one example, in the method of the first embodiment, the first material is selectively removed such that the second material (or underlying material) in the object is not essentially removed. For example, the method can be designed to have a selectivity of removal (e.g., etching selectivity) for the first material over the second material (or underlying material), for example, a selectivity of at least 1.5 to 1; at least 5 to 1; or at least 10 to 1, in the removal according to the present invention (e.g., based on particle beam-induced etching). The selectivity can, for example, allow the removal of the second material (or underlying material) at a slower removal rate than the first material when the second material (or underlying material) is subjected to the method (described herein).

[0043] In one example, the method of the first embodiment further includes removing a second material within a working region. The second material can be removed here in a particle beam-based manner (e.g., via particle beam-induced etching). Providing a first gas and a particle beam within the working region of the object can also function here to remove the second material within the working region. In one example, the first and second materials can be removed in two different removal steps (e.g., two etching units). In the first removal step, for example, the first material can be removed (as described herein) to expose the second material. The first removal step can here be designed to be selective so that the second material is not essentially removed. In other words, with respect to the first removal step, the second material can be designed as a removal stop (e.g., an etching stop). The second removal step can subsequently include the actual removal of the second material. For this purpose, for example, in the first embodiment, it is possible to adjust the processing parameters of the particle beam-based method. This may include, for example, changes in the provision of the first gas (e.g., changes in the gas volumetric flow rate, gas concentration, and / or gas pressure of the first gas). For example, the second removal step may also be performed with a different gas composition than the first removal step (e.g., the first molecules in the second removal step may be different from the first molecules in the first removal step). Changes in the particle beam parameters may also exist for the second removal step (e.g., changes in particle acceleration, changes in particle flow velocity, etc.). Thus, the second material can be removed in the second removal step from the first material in the first removal step, using a different parameter space in this method.

[0044] However, it is also conceivable that the first and second materials are removed in a single removal step. In this case, the sequential matching of the designed processing parameters does not need to be material-specific for, for example, the first material and then the second material. For example, after removing the first material and exposing the second material, the second material can be removed via this method without requiring further material-specific matching of the processing parameters.

[0045] In one example, in the method of the first embodiment, the second material is completely removed within the working area. For example, the means of the method make it possible that, after removal, the second material is no longer present in the working area (or a sub-area within the working area).

[0046] In one example, the method of the first embodiment is carried out in such a manner that a third material, which may be adjacent to (or otherwise located beneath) a second material, is at least partially exposed within the working area by removing the second material. In one example, the method of the first embodiment is designed so that the second material is selectively removed such that the third material of the object is not essentially removed. Thus, the third material can function as a stopper for removal (e.g., etching) for removing the second material. This ensures, for example, that the material beneath the third material is not attacked by a particle beam-based method.

[0047] In one example, in the method of the first embodiment, the third material contains ruthenium. For example, the third material may have the same ruthenium content as the first material (as described herein, for example). It is also conceivable that the third material may be formed essentially entirely from ruthenium. The third material may also include the features and properties described herein with respect to the first material. In addition, the first material may also include the features and properties described herein with respect to the third material.

[0048] In a preferred example, the third material (as well as ruthenium) may also include niobium (Nb).

[0049] In one example, in the method of the first embodiment, the first and third materials contain the same elements. For example, the material composition of the first material can correspond to the material composition of the third material. For example, the first and third materials can consist of the same elements (for example, the first and third materials can consist of ruthenium and substance B, respectively). Therefore, the material-specific features / properties of the first and third materials can be identical in this example (however, it is also conceivable that the proportions of ruthenium and substance B differ between the first and third materials).

[0050] In one example, the method of the first embodiment further includes removing at least one intermediate material. The intermediate material may include any material positioned between the first material and the second material and / or between the second material and the third material. Thus, the second material does not necessarily have to be (directly) adjacent to the first material, but can be coupled to it via at least one intermediate material. In addition, the third material does not necessarily have to be (directly) adjacent to the second material, but can be coupled to it via at least one intermediate material. The intermediate material may here correspond to the material of at least one intermediate layer. For example, it is conceivable that at least one intermediate layer is positioned between the first material and the second material, or between the second material and the third material. The at least one intermediate material may here have the features and properties described herein with respect to the material of the object (for example, the intermediate material may have the features / properties described herein with respect to the first, second and / or third material).

[0051] In one example, in the method of the first embodiment, the second material and / or the third material correspond to the layer material of the pattern element and / or the material of the capping layer of the reflective layer stack of the object (or take the form of the layer material or capping layer).

[0052] The materials (or layers formed therefrom) described herein can be described in detail with reference to exemplary lithographic objects. The object may have a characteristic layered structure in which a capping layer is adjacent to the object's reflective layer stack (e.g., a Bragg mirror). This characteristic layered structure may also include a buffer layer adjacent to the capping layer. A first absorbing layer adjacent to the buffer layer may also be present.

[0053] In one example, the buffer layer and the first absorption layer are layer materials of a pattern element (for example, these layers may be part of an absorption pattern element). The first absorption layer may correspond here to the first material (described herein), and in this case the buffer layer may correspond to the second material (described herein). The capping layer in this example may correspond to the third material (described herein).

[0054] In a further example, the characteristic layer structure also includes a second absorbent layer adjacent to the first absorbent layer. The second absorbent layer may correspond to the first material (as described herein), in which case the first absorbent layer may correspond to the second material (as described herein). The capping layer in this example may correspond to a third material (as described herein), in which case the buffer layer may correspond to at least one intermediate material.

[0055] This method can be constructed using removal selectivity such that a third material (e.g., the capping layer material) is not essentially removed. This allows for control over the termination of the method without attacking the reflective layer stack. Thus, the capping layer can function as a removal stop (e.g., etching stop) to avoid damage to the reflective layer stack that would otherwise be associated with damage to the optical properties of the object. For example, the removal selectivity (e.g., etching selectivity) of the second material with respect to the underlying material (e.g., the third material and / or at least one intermediate material) can include, for example, at least 1.5 to 1; at least 5 to 1; or at least 10 to 1.

[0056] In one example, the method of the first embodiment further includes removing at least one surface material of an object. The surface material may include, for example, the material of the object having a surface (e.g., the exposed surface of the object) that is reachable by a first gas and particle beam. The surface material may, and is not limited to, any material and proportion of the substance of the first material (or second and / or third material) specified herein. The surface material may, for example, be removed here to expose the first material placed beneath it for the method according to the present invention.

[0057] In one example, the first gas can be considered the primary etching gas for the removal of the first material. The first gas can be designed here such that it has a substantial effect on the etching characteristics of the first material. For example, the first gas molecules can be selected so that these first gas molecules produce an etching / removal effect on the first material. The first molecules can also be selected so that these first molecules produce an etching / removal effect on the first material in conjunction with a reaction induced by a particle beam.

[0058] In one example, in the method of the first embodiment, the first molecule contains a halogen atom. The inventors recognize that a gas is particularly suitable for removing a first material (ruthenium-containing), and this gas contains a halogen-containing molecule. Such a first gas (i.e., etching gas) in conjunction with a provided particle beam can advantageously remove the resistant first material in a technically desirable manner. For example, such a first gas can avoid removal residue, long etching times, and removal of heterogeneous material in the method of the first embodiment.

[0059] In one example, in the method of the first embodiment, the first molecule comprises a halogen compound. For example, the halogen compound may comprise a chemical compound comprising at least one halogen atom, where the halogen atom forms a chemical compound having at least one further chemical component (e.g., any further chemical element / atom and / or further chemical group / substance). In one example, the halogen compound may comprise only halogens of the same type (e.g., the first molecule may comprise F2, Cl2, Br2, etc.).

[0060] In one example, in the method of the first embodiment, the first molecule includes a noble gas halide. For example, the noble gas halide may include a chemical compound containing at least one halogen atom and at least one noble gas atom.

[0061] In one example, in the method of the first embodiment, the noble gas halide includes at least one of the following: xenon difluoride, XeF2, xenon dichloride, XeCl2, xenon tetrafluoride, XeF4, xenon hexafluoride, and XeF6. The inventors hereby recognize that, in the context of the method of the first embodiment, such noble gas halides (e.g., xenon difluoride in particular) can also advantageously remove the resistant first material in a technically desirable manner.

[0062] In further examples, the first molecule contains a quadrupole moment greater than zero (or a multipole moment with at least four poles). For example, xenon difluoride can have a quadrupole moment greater than zero.

[0063] In one example, the first molecule includes a polar molecule. Polar molecules having a dipole moment have been found to be suitable for the treatment in principle. In further examples, the first molecule may instead include a nonpolar molecule. The present invention is also based on the concept that nonpolar molecules without a dipole moment can also be suitable for the treatment in principle. In additional examples, the first molecule includes a triatomic molecule. According to the present invention, complex compounds having more than three atoms per molecule are not necessarily required for a suitable method in the first embodiment.

[0064] In one example, the method of the first embodiment further includes: a step of providing a second gas containing a second molecule, wherein the removal of the first material is at least partially based on the second gas as well. The second gas described herein can be considered in this context as an additive gas in relation to the primary etching gas (i.e., the first gas). As an additive gas, the second gas can further influence the removal of the first material or particle beam-induced etching, and can precisely adopt, for example, processing parameters / results (e.g., etching rate, anisotropy factor, selectivity, sidewall angle, surface roughness, etc.). In principle, the molecules described herein for providing the first gas may also be applicable to providing the second gas, and vice versa.

[0065] In one example, the removal of a second material, a third material, an intermediate material, and / or a surface material can also be based on (providing) a second gas.

[0066] In one example, in the method of the first embodiment, the dipole moment associated with the second molecule includes at least 1.6D, preferably at least 1.7D, more preferably at least 1.8D, and most preferably at least 1.82D.

[0067] The inventors recognize that this situation can be advantageous in the removal of the first material. In particle beam-based removal, a defined (local) gas concentration over a specific period of time is typically required, which allows the removal reaction to be carried out in a defined manner. However, due to chemical and / or physical interactions in the removal of the first material, the defined (local) gas concentration can fluctuate to an undesirable degree. This becomes even more important, especially in the case of more complex gas mixtures, including at least two gases (e.g., a first gas and a second gas). Consequently, maintaining the defined (local) gas concentration becomes more crucial. For example, the removal of the first material can be affected in an undesirable way by increasing the degree of (local) depletion of the second gas (and / or the first gas) occurring within the working region. The inventors hereby recognize that by using a second molecule having the dipole moment specified herein, it is possible to optimize the conditions in the configuration of the defined (local) gas concentration when using the first and second gases. Therefore, it is also possible to optimize the removal of the first material in a controlled manner.

[0068] In one example, the method involves considering the dipole moment of a second molecule as a parameter in the removal of a first material. For example, the dipole moment of the second molecule can define processing parameters in the removal operation (e.g., gas volumetric flow rates of the first and / or second gases). For example, the gas volumetric flow rates can be selected according to the dipole moment.

[0069] In one example, the method involves providing a first gas and a second gas at least partially simultaneously. For example, the first gas and the second gas can be introduced simultaneously into the working area environment or into the object environment, for example, during the removal of a first material. This also includes the presence (at least partially) of a first gas volumetric flow rate of the first gas and a second gas volumetric flow rate of the second gas during removal, ensuring the presence of both gases in the working area / object environment. For example, it is possible here that the first and second gas volumetric flow rates are essentially identical. In other examples, these may be different instead. The simultaneous provision of the first and second gases also includes variations in the first gas volumetric flow rate and the second gas volumetric flow rate (in the removal of the first material).

[0070] In one example, the method includes providing the first and second gases at least partially with a time interval between them. For example, this may be necessary to remove the first material such that only one of the two gases is provided or introduced into the working area / object environment during the removal step of the method. For example, this may be necessary to initiate the removal of the first material such that only the first gas (or the second gas) is initially introduced into the working area / object environment. Subsequently, the second gas (or the first gas) can be supplied or provided in a subsequent confluence. In addition, it is also conceivable that there be a gradual alternation during removal between the (exclusive) provision / introduction of the first gas (without the second gas) and the (exclusive) provision / introduction of the second gas (without the first gas). Furthermore, the end of the removal process of the first material may also include the exclusive provision / introduction of one of the two gases. For example, the end of the generation process may be defined by the exclusive provision / introduction of the second gas.

[0071] In one example, in the method of the first embodiment, the second molecule includes water, H2O, and / or heavy water, D2O. To remove the resistant first material, water and / or heavy water have proven to be favorable additive gases. For example, such additive gases can also optimize the selectivity of removal of the first material to the second (or third) material. In a particularly favorable example, the method includes XeF2 as the first gas and H2O as the second gas. In further examples, the second molecule of the second gas may also include hemi-heavy water, HDO.

[0072] In further examples, the second gas (or second molecule) may include oxygen-containing components, halides, and / or reducing components. Oxygen-containing components may include, for example, oxygen-containing molecules. For example, oxygen-containing components may include at least one of the following: oxygen (O2), ozone (O3), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), and nitric acid (HNO3). Halides may include at least one of the following: Cl2, HCl, XeF2, HF, I2, HI, Br2, HBr, NOCl, NOF, ClNO2, FNO2, PCl3, PCl5, PF3, and PF5. Reducing components may include molecules having hydrogen atoms. For example, reducing components may include at least one of the following: H2, NH3, (NH2)2, and CH4. In one example, the second gas may include water (and / or heavy water) and nitrogen dioxide.

[0073] In one example, in the method of the first embodiment, the particle beam is at least partially based on an acceleration voltage of less than 3 kV, preferably less than 1 kV, more preferably less than 0.8 kV, and most preferably less than 0.6 kV. The method of the first embodiment (as described herein) can be advantageously performed within this range of acceleration voltages. For example, in this parameter space, the first material can be advantageously removed by the particle beam. In one example, the particle beam is also based on an acceleration voltage of at least 0.1 kV, preferably at least 0.15 kV, even more preferably at least 0.2 kV, and most preferably at least 0.3 kV.

[0074] In addition, the particle beam may also be based on an acceleration voltage of less than 30 kV, preferably less than 20 kV. In one example, for imaging purposes, an acceleration voltage between 3 kV and 30 kV can be used within the range of this process (for imaging before and / or during removal).

[0075] In one example, the particle jet contains a current between 1 pA and 100 pA, preferably between 5 pA and 80 pA, and most preferably between 10 pA and 60 pA.

[0076] In one example, in the method of the first embodiment, the method is at least partially based on the temperature associated with the first and / or second gases. The temperature can be predetermined. The temperature can be, for example, less than 0°C (or less than 273.15K), preferably less than -5°C (or less than 268.15K), more preferably less than -10°C (or less than 263.15K), and most preferably less than -15°C (or less than 258.15K). The temperature associated with the first and / or second gases can correspond, for example, to the temperature at which each reservoir container containing the first (or second) gas is (actively) heated. Each reservoir container can here function as a source or storage means, and it is possible to supply the first (or second) gas from this reservoir container. For example, supply (as described herein) can be carried out from a first reservoir container containing the first gas, or otherwise from a second reservoir container containing the second gas. The temperature of each reservoir vessel can be controlled here by means of, for example, a Peltier element. In one example, the temperature specified herein includes the temperature of the first (or second) gas in each reservoir vessel before the first (or second) gas is actually supplied to the Method (described herein). This makes it possible to supply the first (or second) gas from a gas-containing source having a defined gas temperature, and as a result the Method can be introduced in, for example, a defined and also reproducible manner. In an example involving the supply of the first (or second) gas, it should be noted that the temperature of the first (or second) gas in the working region does not necessarily have to correspond to the temperature of the first (or second) gas in each reservoir vessel. For example, supplying (including, for example, transporting the first (or second) gas from each reservoir vessel through gas conduits to the working region) can result in a change in the temperature of the first (or second) gas. However, by supplying the gas from a source having a defined gas temperature (as described herein), it becomes possible to construct the gas temperature of the supplied gas (e.g., within the operating range) in a defined and reproducible manner.

[0077] In further examples, the temperatures associated with the first and / or second gases (as specified herein) may correspond to the temperatures of the (solid and / or liquid) precursors, in which case the first (or second) gas for the method can be formed from at least one precursor. For example, the precursors may include solid and / or liquid starting materials, from which the first (or second) gas is produced by means familiar in the industry. The temperature (as specified herein) can be formed by means familiar in the industry, by functioning here to adjust and / or control the vapor pressure of the solid and / or liquid precursors. The temperature can here be adjusted / controlled by means of a Peltier element, for example. The temperature (as specified herein) may here correspond to the temperature of a reservoir containing the precursors. The reservoir (i.e., precursor reservoir) can be designed, for example, specifically for the precursors. In further examples of the present invention, the precursor reservoir can similarly function as a reservoir vessel for the first (or second) gas. In addition, the precursor reservoir may also be coupled to a separate reservoir vessel for a first (or second) gas, in which case the first (or second) gas is formed in the precursor reservoir and then introduced into (and, for example, stored in) the separate reservoir vessel.

[0078] In addition, in one example, the temperature associated with the first and / or second gas may also include the temperature in the environment of the object (e.g., within the operating area of ​​the method described herein or within the processing chamber in which the object for the method is placed). For example, this may include the temperature of the first (or second) gas in the environment of the object. In a further example, during the method, the object may also be brought to its temperature (as specified herein) by means of a suitable object holder (e.g., a temperature-controllable chuck). In this example, it may also be chosen that a default temperature > 0°C is selected.

[0079] In one example, the method further includes determining the removal endpoint, at least in part, based on detecting electrons emitted from the object. For example, electrons can be emitted by the interaction between the object material or the material of the working region and the provided particles. These may be electrons that, for physical reasons, escape from the working region of the material to which the particle beam is incident. In one example, electrons include scattered electrons and / or secondary electrons. Scattered electrons may include, for example, electrons backscattered by the object (backscattered electrons, i.e., BSE) and / or electrons forward scattered by the object (forward scattered electrons, i.e., FSE). The detected electrons can provide information about the material properties of the working region of the particle beam, thereby allowing conclusions to be drawn about the material treated by the particle beam. For example, determining the endpoint may include using the detected electrons to determine that the particle beam does not / no longer acts on a first material. This can indicate that the first material has been removed and the processing endpoint (i.e., the end point of the processing) has been achieved. In addition, determining endpoints may include using detected electrons to confirm that the particle beam has been processed with a second and / or third material. Thus, for example, it is possible to determine endpoints for the removal of the first material and / or the removal of the second material. In principle, detected electrons can be used to determine the material currently being processed by the particle beam, even if this is not based on endpoint determination (e.g., for processing monitoring, as a processing history protocol). The particle beam can also be constructed such that there is sufficient difference in the electron signal detected (e.g., via accelerating voltage, current, etc.) depending on the material in the working region.

[0080] In one example, in the method of the first embodiment, the particle beam includes an electron beam. For example, in the context of this method, the removal described herein may include electron beam-induced etching (e.g., also known as (F)EBIE - (focused) electron beam-induced etching).

[0081] However, it is also conceivable that the particle beam may include ion beams (e.g., gallium ions, helium ions, etc.). For example, removing the first material could be based on ion beam-induced machining / etching (e.g., focused ion beam (FIB) milling). Similar to the use of solid particles, it is also conceivable that a particle jet of zero-mass particles (e.g., photons) could be used.

[0082] In addition, the use of multiple particle beams as a particle beam is also conceivable.

[0083] In one example, the method is carried out in such a manner that the sidewall angle (edge, e.g., edge of the structure) of the first (or second) material is 70° to 90°, preferably 74° to 90°, more preferably 78° to 90°, and most preferably 80° to 90°. The sidewall angle can here be based, for example, on the plane of the layer placed beneath the first (or second) material, or otherwise on the (flat) plane of the object.

[0084] In one example, the method is carried out in such a manner that the exposure of the second material (via the removal of the first material) imparts a surface of the second material having a square root roughness, RMS of less than 3 nm, preferably less than 2 nm, more preferably less than 1 nm, and most preferably less than 0.5 nm.

[0085] In one example, the method is carried out in such a manner that the exposure of the third material (via the removal of the first and second materials) imparts a surface of the third material having a square root roughness, RMS of less than 3 nm, preferably less than 2 nm, more preferably less than 1 nm, and most preferably less than 0.5 nm.

[0086] In one example, the method of the first embodiment is performed in such a manner that a defect in the object is repaired. For example, the method may include repairing black defects in the object.

[0087] Here, a black defect is a defective area on a lithographic object that, according to the object's design, should not be opaque, i.e., should be transparent (for example, transparent, or designed to be transparent, so as not to have specific absorption to radiation of a particular wavelength, e.g., the lithography wavelength). A black defect can also be considered a defective area on an object where (undesirable) material is present on the area, even though, according to the object's design, it should not contain any material of the pattern element. The present (undesirable) material may, for example, be the material of the pattern element, although this material may also be a different (undesirable) material that has radiation absorption and / or phase shift properties. In contrast, a white defect is a defective area on a lithographic object that, according to the object's design, should not be opaque (for example, opaque, or strongly absorbs radiation of a particular wavelength, e.g., the lithography wavelength). A white defect can also be considered a defective area on an object where, according to the object's design, it should contain the material of the pattern element, but no material is present on the area, or the material of the pattern element is absent. In particular, opacity can be defined in relation to the lithography method applied to the object. For example, the object to be lithographed may include an EUV mask for EUV lithography, where "opacity" in this case refers to a lithography wavelength of 13.5 nanometers. Depending on the object, "opacity" can also be related to DUV lithography (e.g., at lithography wavelengths of 193 nanometers or 248 nanometers), i-line lithography (e.g., at a lithography wavelength of 365 nanometers), or any other lithography method. In addition, black defects can include, for example, defective areas having opaque material in a layer of the lithography mask (e.g., this can include a layer designed as a layer for opaque pattern elements of the object). The method here may include removing the first material so that the defective area is no longer opaque.

[0088] For example, defect repair may first involve locating the defect (e.g., via a scanning electron microscope, optical microscope, etc.). Based on at least one characteristic of the local defect (e.g., based on the location, shape, size, type, etc. of the defect), it is possible to define a working area to be used for the removal of a first material. Repairing a defect in an object may further involve generating a repair mold that encompasses the defect. In one example, the repair mold may function as a working area for the method specified herein. The repair mold may have, for example, a pixel pattern, which may enable the location of the defect site. The pixel pattern may be designed such that, for example, it follows the contour of the defect, and all pixels in this pixel pattern essentially correspond to the site of the defect, thus constituting defective pixels. In another example, the pixel pattern has a fixed geometric shape (e.g., polygon, rectangle, circle, etc.) which completely encompasses the defect, but in this case each pixel does not necessarily constitute a defect site. It is possible here that the pixel pattern includes defective pixels corresponding to the defect site and non-defective pixels corresponding to parts that do not cover part of the defect. In one example, the method involves guiding a particle beam over defective pixels in at least a reparative pixel pattern during material generation. In addition, the particle beam can be constructed so that it can be directed to any defective pixel during the removal of the first (or second) material. This ensures that the removal of the first (or second) material is locally limited to the defective pixels, and therefore only defects are treated.

[0089] In further examples, the method can be used for processing an object, including the localization of material. Material processing and localization can be performed, for example, in the context of defect treatment in the object (e.g., repair of white defects and / or defective areas, removal of particles, etc.). Thus, the first material does not necessarily have to be a layer material of the object. Material generation can include, for example, the deposition of a material corresponding to the properties of the first material (as described herein). For example, erroneous generation of the first material may occur during the localization of material. Thus, by means of the method according to the present invention, the erroneously generated material can be removed as the first material (as described herein). For example, in the process of complex repair, it may be necessary to specifically generate the first material and also to remove it in a controlled manner (for example, this may be necessary if the first material is generated as a sacrificial layer).

[0090] In one example, in the method of the first embodiment, the object includes an EUV mask and / or an EUV mask. For example, the characteristic layer structure described herein may correspond to the layer structure of an EUV mask.

[0091] The variation relates to a method for processing a lithographic object, comprising the steps of: providing a first processing gas; and providing a particle beam into the working region of the object to remove a first material within the working region, at least partially based on the first processing gas, wherein the first material comprises ruthenium.

[0092] The process gas can be considered here as a gas or mixture of gases supplied to a reaction for removal from an inherently present (e.g., within the operating region) and / or material. The first process gas may include, for example, a first gas, or a combination of first and second gases (as described herein). Thus, the first process gas may include, for example, a substantial etching gas or a substantial etching gas and an additive gas (as described herein).

[0093] The variations can be combined with the features of the first embodiment. In addition, the features described in relation to the variations can be combined with the first embodiment.

[0094] In one example, the first process gas may contain xenon difluoride molecules. In this case, the first process gas may, for example, contain or correspond to the first gas, the first molecule containing xenon difluoride molecules.

[0095] In one example, the first processing gas may further contain water molecules. Thus, the first processing gas may, for example, and the first gas may also contain a second gas (as described herein), the second of which may contain water molecules. Technical means of controlling the water molecules in the first processing gas (e.g., through adjustment of gas concentration, gas flow rate, etc., for example, by means of a controllable gas conduit) can enable the removal of the first material in a controlled manner (as described herein). Thus, processing parameters and the results of the removal of the first material can be employed in a targeted manner (e.g., with respect to etching rate, anisotropy factor, (material) selectivity, sidewall angle, surface roughness, etc.).

[0096] In one example, the method may further include, instead or additionally: the step of providing a second processing gas; and the step of providing a particle beam within a working region to remove a second material within the working region, at least in part on the second processing gas, wherein the second material includes tantalum. The second processing gas can also be considered similar to the first processing gas. The second processing gas may include, for example, the first gas, or the first and second gases (as described herein). Thus, the second processing gas may include, for example, a substantial etching gas, or a substantial etching gas and an additive gas (as described herein). The removal of the second material is significant on its own, but may otherwise be combined with the removal of the first material.

[0097] Therefore, the first material (or the corresponding first layer in the working region) can be removed, for example, via a particle beam-induced reaction with a first processing gas. The second material (or the corresponding second layer in the working region), in contrast, can be removed via a particle beam-induced reaction with a second processing gas. Thus, each material (or each layer) can be removed within the working region via a separate particle beam-based reaction.

[0098] The first and second process gases can be different from each other. The difference can be caused by different components of the gases. For example, the first process gas may contain component A (e.g., a first noble gas halide), and the second process gas may contain component B (e.g., a second noble gas halide). However, the first and second process gases may also contain the same components, provided that they differ by at least one component. For example, the first and second process gases may contain one and the same noble gas halide, provided that the first process gas additionally contains further components not present in the second process gas.

[0099] For example, the second processing gas may include xenon difluoride molecules. Xenon difluoride molecules can be considered, for example, a substantial etching gas (as described herein).

[0100] In one example, the second process gas may further contain nitrogen dioxide molecules. The nitrogen dioxide molecules can be considered, for example, an additive gas or a component of the additive gas (as described herein).

[0101] In one example, the second processing gas may further contain tetraethyl orthosilicate molecules.

[0102] Tetraethyl orthosilicate molecules can be considered, for example, as an additive gas or a component of an additive gas (as described herein).

[0103] In one example, the second treatment gas comprises xenon difluoride molecules, nitrogen dioxide molecules, and tetraethyl orthosilicate molecules. This gas mixture as the second treatment gas has been found to be particularly advantageous for removing the second (tantalum-containing) material by the method described herein. It is possible here that the xenon difluoride molecules function as a substantial etching gas, in which case the nitrogen dioxide molecules can function as an additive gas together with the tetraethyl orthosilicate molecules. The additive effect of the nitrogen dioxide molecules and the tetraethyl orthosilicate molecules can thus be combined in the removal of the second material.

[0104] In one example, the method may also, instead or additionally, include the step of providing a particle beam into the working region to remove further material in the working region, at least partially based on a second processing gas, wherein the further material includes tantalum and has a different material composition from the second material. The further material may include, for example, the substances and / or elements of a third material (as described herein), but the further material does not necessarily have to include ruthenium. The second processing gas may be provided separately during and / or before the removal of the second material. However, the second processing gas may also be provided sequentially with the removal of the second and further materials, so that it is not necessary to provide this second processing gas separately or again. The removal of further material may be significant on its own, but may also be combined with the removal of the first and / or second materials.

[0105] The first, second, and further materials may also be constructed as described herein, for example, with reference to the first embodiment.

[0106] In one example, the molar ratio of ruthenium in a first material can be higher or essentially the same as the molar ratio (e.g., atomic percentage) of one or all other elements present in the first material. For example, the molar ratio of ruthenium can be R, and the proportion of further substances in the first material can be expressed, for example, X for substance 1 and Y for substance 2. Thus, the molar ratio R can be essentially the same, for example, in comparison with the other molar ratios (e.g., R=X=Y). However, the molar ratio R can also be higher, for example, in comparison with the other elements (e.g., R>X and / or R>Y). Thus, the molar ratio of ruthenium can also form a relative majority of the first material. For example, the molar ratio of ruthenium can also form an absolute majority of the first material (e.g., R>50 atomic percentage), as described herein. For example, the molar ratio of ruthenium can also be less than 50 atomic percentage, as described herein. Molar ratios can be reported here in atomic percentages (as described herein). In some cases, the molar ratio can be selected so that ruthenium is dominant in the phase shift properties of the first material (for example, in the EUV region).

[0107] In one example, the molar ratio of tantalum in the second material can be high or essentially the same as the molar ratio of other elements contained in the second material. For example, the molar ratio of tantalum in the second material can also form a relative majority of the second material. For example, the molar ratio of tantalum in the second material can instead form an absolute majority of the second material. For example, the molar ratio of tantalum in the second material can be at least 50 atomic percent, preferably at least 60 atomic percent, more preferably at least 70 atomic percent, and most preferably at least 90 atomic percent.

[0108] In one example, the second material may also contain oxygen, boron, and / or nitrogen.

[0109] In one example, the second material may include at least one of the following: tantalum oxide (e.g., TaO), tantalum borate (e.g., TaBO), tantalum nitride (e.g., TaN), or tantalum boronite (e.g., TaBN).

[0110] In one example, the molar ratio of tantalum in a further material can be high or essentially the same as the molar ratio of other elements present in the further material. For example, the molar ratio of tantalum in a further material can also form a relative majority of the further material. For example, the molar ratio of tantalum in a further material can be at least 50 atomic percent, preferably at least 60 atomic percent, more preferably at least 70 atomic percent, and most preferably at least 90 atomic percent.

[0111] In one example, the additional materials may include at least one of the following: tantalum oxide, tantalum borate, tantalum nitride, and tantalum boronite.

[0112] In one example, the second material includes tantalum borate (e.g., TaBO), and the further material includes tantalum boronite (e.g., TaBN).

[0113] In one example, a particle beam can include an electron beam.

[0114] In one example, the method may further include determining the endpoint for material removal, at least in part, based on detecting electrons emitted from the working region. The detected electrons may include, for example, primary and / or secondary electrons.

[0115] In one example of this method, the material can be removed at least partially over a predetermined period of time. For example, the period in the parameter space of this method can be determined experimentally (e.g., by means of carrying out the method using multiple periods to determine when the material (e.g., at a specific thickness) has been removed). For example, the predetermined period can correspond to a predetermined thickness of the material.

[0116] In one example of this method, the removed material may include the layer material of a pattern element of the object (e.g., as described herein). The pattern element (e.g., a multilayer pattern element) can be placed here on top of the capping layer of the object (covering a large area and essentially unstructured). In one example, the pattern element includes a layer array having a first layer containing a first material, a second layer containing a second material (e.g., an adjacent second layer), and a third layer containing further material (e.g., adjacent to the second layer). For example, the third layer here may be the bottom layer adjacent to the capping layer of the object. For example, the pattern element may be designed such that the first layer contains ruthenium, its second layer contains tantalum borate (e.g., TaBO), and its third layer contains tantalum boronite (e.g., TaBN).

[0117] It should be noted that the layer arrangement of the pattern element may include further layers. For example, one or more layers may be placed on top of the first layer, and / or one or more layers may be placed between the third layer and the capping layer. For example, one or more anti-reflective layers may be present on top of the first layer described herein. In addition, one or more layers may be placed between the first and second layers, and / or one or more layers may be placed between the second and third layers. Furthermore, it can also be assumed that the first, second and third layers may be arranged in any arrangement within the (multilayer) pattern element and are not necessarily required to be arranged in the order of the first, second, and third layers. For example, the layer array may also include one of the following arrays: a first layer, a third layer, a second layer and / or a second layer, a third layer, a first layer and / or a second layer, a first layer, a third layer and / or a third layer, a second layer, a first layer and / or a third layer, a first layer, a second layer. In some examples, it is also possible that only one or two of the first, second, and third layers are provided. In these examples as well, one or more additional layers may be present in the layer array. For example, one or more additional layers may be separated from the first, second, and / or third layers described herein. In addition, it is also possible that one or more anti-reflective layers (or one or more additional layers) may be present on top of the first, second, and / or third layers.

[0118] A first layer containing a first (ruthenium-containing) material can be designed to be primarily phase-shifted with respect to the corresponding lithography wavelength (e.g., EUV wavelength, e.g., 13.5 nm EUV wavelength). A second layer containing a second (tantalum-containing) material can be designed to be primarily radiation-absorbent with respect to the corresponding lithography wavelength (e.g., EUV wavelength, e.g., 13.5 nm EUV wavelength). A third layer containing a third (tantalum-containing) material can be designed to be primarily radiation-absorbent with respect to the corresponding lithography wavelength (e.g., EUV wavelength, e.g., 13.5 nm EUV wavelength). For example, the (real) refractive index n of the first layer can be greater than the (real) refractive index of the second and / or third layer. For example, the real part of the refractive index (usually reported as n) of the first layer (or the first material) can be greater than the real part of the refractive index of the second and / or third layer (or the second and / or third material). For example, the imaginary part of the refractive index (i.e., the absorption coefficient k) of the first layer (or the first material) can be smaller than the absorption coefficient of the second and / or third layer (or the second and / or third material).

[0119] A second aspect relates to an apparatus for processing a lithography object, comprising means for providing a first gas and means for providing a particle beam within the working area of ​​the object, and constructed to carry out the method in the first aspect. In addition, the apparatus may include means for executing a computer program (e.g., a computer system, a computing unit, etc.). The apparatus may essentially correspond to a scanning electron microscope capable of providing an electron beam as a particle beam onto an object. The scanning electron microscope may be constructed to provide the gases described herein. The first gas (and / or second gas) may be stored, for example, in a corresponding reservoir container and introduced into the working area of ​​the object via a gas supply system (e.g., a gas conduit having a gas nozzle). The apparatus may further include a control system arranged to carry out the method in an automated manner.

[0120] In addition, the apparatus may optionally or additionally include means for providing the first and / or second treatment gas (as described herein).

[0121] A third aspect relates to a lithographic object that has been processed by the method in the first aspect. For example, it is possible here to detect whether the object has been processed by the method in the first aspect by optical analysis of the sample. For example, an optical analysis can be performed or undertaken with respect to the lithographic object (e.g., in the process of defect identification of the object, e.g., after the generation of the object and / or when the object is introduced into semiconductor work). The optical analysis can be based, for example, on optical or particle-based microscopy (e.g., mask measuring device, mask microscope) and, for example, imaging operations. In the processing of the object, in one example of the first aspect, after the initial analysis, the first (or second) material can be removed here as described herein. The removal of the first (or second) material can be detected by repeated visual analysis (e.g., in the process of repair check or another defect identification). Detection can be performed, for example, by comparison of the initial visual analysis with repeated visual analysis (e.g., by comparison of corresponding images). In addition, detection in this method can also be based on material analysis of the object (e.g., auger spectroscopy, X-ray spectroscopy, etc.), and can be performed, for example, by an auxiliary method using an initial visual analysis or repeated visual analysis.

[0122] A fourth aspect of the present invention relates to a method for processing a semiconductor-based wafer. The method in the fourth aspect further comprises lithographic transfer of a pattern associated with a lithography object onto a wafer, the object being processed by the method in the first aspect. The lithographic transfer may include a lithography method for which the object has been designed (e.g., EUV lithography, DUV lithography, i-ray lithography, etc.). For example, the method in the fourth aspect may include providing a beam source of electromagnetic radiation (e.g., EUV radiation, DUV radiation, i-ray radiation, etc.). This may additionally include providing a developable lacquer layer on the wafer. The lithographic transfer may also provide a developable lacquer layer, at least partially based on the irradiation source. For example, it is now possible to image (in a transformed form) the pattern onto the lacquer layer by means of radiation from the irradiation source.

[0123] The methods described herein can be recorded, for example, in documentary form. This can be achieved, for example, by means of digital files, similarly (for example, in paper form), in a user handbook, or in formulas (for example, recorded on devices and / or computers in a semiconductor factory). It is also conceivable that a documentary protocol may be compiled into an execution of one of the methods described herein. The protocol, for example, the demonstration of the execution of the method and its details (for example, formulas), can be made available at a later point in time (for example, in the process of failure evaluation, material review committee, audit, etc.). The protocol can be recorded, for example, on devices and / or computers, and may include, for example, a protocol file (i.e., a logarithmic file).

[0124] The fifth aspect relates to a computer program that, when executed by a computer system, includes instructions causing the computer system to perform the method according to the first aspect and / or the method according to the fourth aspect.

[0125] A further embodiment relates to the above-described device having memory containing a computer program. Furthermore, the device may have means for executing the computer program. Alternatively, the computer program may be stored elsewhere (e.g., in the cloud), or the device may simply have means for receiving instructions resulting from the execution of the program elsewhere. In either case, this can enable the method to be executed in an automated or autonomous form within the device. Consequently, intervention, such as operator intervention, can be minimized, and thus, when processing masks, both cost and complexity can be minimized.

[0126] The following detailed description includes technical background information and examples of the present invention with reference to the following figures: [Brief explanation of the drawing]

[0127] [Figure 1] This is a schematic diagram showing an exemplary restoration of a lithographic object, viewed from above. [Figure 2] A schematic diagram illustrating an exemplary method of the present invention is shown. [Figure 3a] An example of the operation in the method of the present invention is shown in a schematic cross-sectional view. [Figure 3b] An example of the operation in the method of the present invention is shown in a schematic cross-sectional view. [Figure 3c] An example of the operation in the method of the present invention is shown in a schematic cross-sectional view. [Figure 4] A schematic diagram of an exemplary apparatus of the present invention is shown. [Figure 5] This diagram shows a schematic cross-section of a lithographic object through a pattern element. This pattern element can be processed by the exemplary method of the present invention. [Modes for carrying out the invention]

[0128] Figure 1 shows a schematic top view illustrating an exemplary restoration of a lithography object. The lithography object may include a lithography mask suitable for any lithography method (e.g., EUV lithography, DUV lithography, i-line lithography, nanoimprint lithography, etc.). In one example, the lithography mask may include an EUV mask, a DUV mask, an i-line lithography mask, and / or a nanoimprint stamp. In addition, the lithography object may include binary masks (e.g., chromium masks, OMOG masks), phase masks (e.g., chromium-free phase masks, alternating phase masks (e.g., rim phase masks), halftone phase masks, tritone phase masks, and / or reticles (e.g., with pellicles)). The lithography mask can be used, for example, in lithography methods for the production of semiconductor chips.

[0129] Lithographic objects may contain (undesirable) defects. For example, defects can be caused during the production of the object. In addition, defects can also be caused by the (lithographic) processing of the object, processing deviations during the (lithographic) processing, and transportation of the object. Therefore, given the normally costly and complex production of lithographic objects, defects are usually repaired.

[0130] In the examples described herein, EUV masks are frequently used as examples of lithographic objects for illustrative purposes. However, any lithographic object (such as those described herein) can be used rather than just EUV masks.

[0131] Figure 1 shows two local states D and R of detail 1000 of an EUV mask in the process of repairing defects in the mask, in a schematic top view. Detail 1000 represents a portion of the pattern element PE of the EUV mask. The pattern element PE can also be considered as a pattern element (or otherwise a pattern structure) of the EUV mask. The pattern element PE can be part of a designed pattern that can be transferred to a wafer, for example, via lithography. Local state D represents a black defect 1010 adjacent to the pattern element PE. The black defect 1010 may be characterized by, for example, excess (opaque) material that should not be present on the defect side after mask development. The excess (opaque) material may correspond to, for example, the opaque material of the pattern element PE, or any other material (as described herein) in the layer of the pattern element PE. In relation to Figure 1 (state D), a defect-free pattern element PE in detail 1000 would have had a square shape, but this target state is clearly absent due to the presence of the black defect 1010. Therefore, the repair procedure RV removes excess (opaque) material from the area of ​​the black defect 1010 so that the repaired state R of the pattern element PE can be produced. Thus, in state R, it is shown that there is no longer any opacity effect in the original defect area 1020 (i.e., the original part in the black defect), and no excess (opaque) material is present anymore. Thus, the removal of defect 1010 reaffirms the target state of the rectangular shape of the pattern element PE after the repair operation.

[0132] While in use in a lithography apparatus or lithography process, lithography masks may be exposed to extreme physical and chemical environmental conditions. This is particularly true for the exposure of EUV masks (and DUV masks, or other masks described herein) during the corresponding lithography process, and opaque materials, especially the opaque materials of pattern element PEs, may be subject to these effects to a significant degree. For example, in the case of EUV exposure, a hydrogen plasma containing free hydrogen groups may be emitted, which can attack the opaque materials of pattern element PEs, among other materials, causing material modification and / or material removal. Further damaging effects may occur during EUV lithography processing and mask cleaning processes. Damage to mask materials includes, for example, (EUV) radiation, temperature, and chemical and physical modification of the material due to reactions with hydrogen or other reactive hydrogen species (e.g., free radicals, ions, plasma, etc.). Modification of the material can be caused not only by exposure to radiation (e.g., EUV radiation, DUV radiation) but also by reactions with purge gases (e.g., N2, extremely clean dry air - XCDA®, noble gases, etc.). Damage to the material can similarly occur or be accelerated by downstream processing (e.g., mask cleaning operations). Downstream processing exacerbates the damage, for example, by additionally attacking the opaque material of the pattern element PE that has already been damaged by chemical / physical reactions during the exposure operation.

[0133] Therefore, certain opaque materials used in pattern element PE can be chemically resistant materials. In particular, ruthenium-containing materials (as described herein) can be used as resistant materials for pattern element PE in EUV masks due to their extremely high chemical stability. Ruthenium-containing materials include, for example, Ru a Z bThe group can take the form (a, b≧0, Z: one or more further elements having a stoichiometric coefficient b applicable to each element). Z can here include metals, nonmetals, metalloids, and alkali metals (e.g., Li, Na, K, Rb, Cs). In addition, Z can include alkaline earth metals (e.g., Be, Mg, Ca, Sr, Ba), group 3 elements (e.g., B, Al, Ga, In, Tl), group 4 elements (e.g., C, Si, Ge, Sn, Pb), and group 5 elements (e.g., N, P, As, Sb, Bi). In addition, Z can include chalcogenides (e.g., O, S, Se, Te), halogens (e.g., F, Cl, Br, I), noble gases (atoms) (e.g., He, Ne, Ar, Kr, Xe), and transition group elements (e.g., Ti, Hr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg).

[0134] However, since the repair operation specifically removes resistant (opaque) material, this type of resistant (opaque) material in the pattern element PE or EUV mask can make the repair operation RV for black defects 1010 significantly more difficult.

[0135] Figure 2 shows a schematic diagram of an exemplary method 200 of the present invention. Method 200 can be used to remove material from an EUV mask. In particular, method 200 can be used to remove material from a black defect 1010 during a repair operation.

[0136] Method 200 may hereby include providing a first gas 210 comprising a first molecule. The first gas may here comprise, for example, XeF2 as the first molecule. In addition, other gases may also be assumed as the first gas described herein.

[0137] Other molecules are also suitable as the first molecule of the first gas for Method 200. For example, polar and nonpolar triatomic molecules can be considered. The first molecule may also include molecules that can be cleaved into chlorine or fluorine groups under appropriate reaction conditions, and / or additionally, for example, further cleaved into nonpolar species.

[0138] In addition, Method 200 may include providing a particle beam 220 within the working region of an object to remove a first material within the working region, at least partially based on a first gas. The first material may here include ruthenium. Method 200 may also be a feature 230 of Method 200 in which the first material comprises at least 50 atomic percent ruthenium, preferably at least 70 atomic percent ruthenium, and particularly preferably at least 90 atomic percent ruthenium. Method 200 may also include an electron beam as a particle beam so as to enable electron beam-induced etching of the material by Method 200.

[0139] The first material can here specifically correspond to the resistant (opaque) material of the EUV mask (as described herein), which is to be removed during the repair of black defects.

[0140] Method 200 may also include providing a second gas as an additive gas to assist the etching process (e.g., with respect to etching selectivity, etching rate, anisotropy factor, etc.). In particular, in the case of electron beam-induced etching, the first gas used in Method 200 may be XeF2 and the additive gas H2O (i.e., water (vapor)). In addition, the second molecule may have a dipole moment between 1.6D and 2.1D, preferably between 1.7D and 2D, more preferably between 1.8D and 1.95D, and most preferably between 1.82D and 1.9D. H2O may also be conceivable to be combined with nitrogen dioxide (or another oxidizing gas) as an additive gas.

[0141] Figures 3a-3c provide cross-sectional diagrams of the procedures in Method 200, which may occur during the repair of defects within a lithographic object, as an example.

[0142] Figure 3a schematically represents an exemplary characteristic layer structure of a reflective lithography mask (i.e., a UV mask) for the UV wavelength region. The exemplary EUV mask 200 can be designed, for example, for exposure wavelengths in the 13.5 nm region. For example, the EUV mask can include a phase-shifted EUV mask and / or a radiation-absorbing EUV mask. For example, the exemplary characteristic layer structure can be designed to be inherently radiation-absorbing for EUV lithography using a radiation-absorbing EUV mask (as described herein). For example, the exemplary characteristic layer structure can also be designed to be (inherently) phase-shifted for EUV lithography using a phase-shifted EUV mask. The EUV mask can include a substrate S made of a material with a low coefficient of thermal expansion, such as quartz. Other dielectric, glass, or semiconductor materials can also be used as substrates for the EUV mask.

[0143] The substrate S may be adjacent to a deposited multilayer film or reflective layer stack ML containing, for example, 20 to 80 pairs of alternating molybdenum (Mo) and silicon (Si) layers, which can also be called a MoSi layer. The individual layers of the multilayer film ML may have different refractive indices, thereby causing a Bragg mirror that can reflect incident radiation (e.g., EUV radiation).

[0144] To protect the reflective layer stack ML, a capping layer D can be applied, for example, on top of the top layer of the reflective layer stack ML. The capping layer D can protect the reflective layer stack ML from damage caused by chemical processing during production and / or during the use of an EUV mask (e.g., during lithography). The capping layer D may here contain ruthenium (of the element), as well as elements or compounds of elements that increase the reflectivity by 3% or less beyond the wavelength of 13.5 nm. In addition, the capping layer D may also contain Rh, Si, Mo, Ti, TiO, TiO2, ruthenium compounds, ruthenium alloys, ruthenium oxide, niobium oxide, RuW, RuMo, RuNb, Cr, Ta, nitrides, as well as compounds and combinations of the above materials. The capping layer may further contain one of the following materials: RuRh, RuZr, RuZrN, RuNbN, RuRhN, RuV, RuVN.

[0145] On top of the capping layer D, there may be several layers, for example, which may include a pattern element layer (i.e., a pattern element layer). The pattern element layer may include a buffer layer P, an absorption layer A, and / or a surface layer O. The properties of the pattern element layer (e.g., intrinsic material properties of the pattern element layer, the thickness of the pattern element layer, etc.) and the shape of the pattern element PE formed therefrom can be designed to produce an opacity effect in relation to the exposure wavelength of the EUV mask. For example, the pattern element PE can be designed to be opaque (i.e., non-transmissive to light or highly light-absorbing) with respect to light radiation having a wavelength of 13.5 nm. The black defect 1010 does not necessarily have all of the pattern element layers, but the pattern element layers can correspond to the layers of the black defect 1010. For example, the black defect 1010 may have only the buffer layer P and the absorption layer A.

[0146] A buffer layer P can exist on top of a capping layer D. In addition, an absorption layer A can exist on top of buffer layer P. Absorption layer A can be designed to be effective in absorbing radiation of the lithography wavelength (as described herein). Thus, absorption layer A can play the main contribution to the opacity effect of the pattern element (or black defect 1010). The optical properties of absorption layer A can be described by a complex refractive index that can include, for example, a phase shift contribution (i.e., n) and an adsorption contribution (i.e., k). For example, n and k can be considered intrinsic material properties of the absorption layer. Only certain chemical elements and / or compounds of chemical elements have phase shift and / or absorbing properties that are favorable to the corresponding lithography method (e.g., EUV lithography). Figure 3a shows, as an example, the layer thickness d of absorption layer A. The layer thickness d of absorption layer A (and also the layer thickness of another layer of the mask) can be determined, for example, along the normal vector in relation to the plane of the mask. In principle, it can also be assumed that absorption layer A includes a number of absorption layers, for example, containing different materials. In addition, the surface layer O can be present on top of the absorption layer A. The surface layer O may include an anti-reflective layer, an oxide layer, and / or a passivation layer. Similar to the absorption layer A, the buffer layer P and / or the surface layer O may also contribute to the absorption and opacity of the pattern element PE or black defect 1010.

[0147] In principle, any of the pattern element layers described herein may include the described resistive first material (i.e., a ruthenium-containing material). Typically, for example, absorption layer A contains ruthenium. Therefore, the first material in method 200 may include the material of absorption layer A. In addition, it is also possible, for example, that a buffer layer P or surface layer O contains ruthenium and thus constitutes the first material in method 200.

[0148] Figure 3b shows the results of an exemplary method 200 for the removal of a portion of the absorption layer A. The absorption layer A is designed as the first material in method 200. First, a portion of the surface layer O can be removed. For example, this can be performed similarly to method 200 via electron beam-induced etching in a separate step. The surface layer does not necessarily have to be removed with the first and / or second gas (as described herein). It is also conceivable that the electron beam-induced etching be designed specifically for the removal of the surface layer (e.g., matching the etching gas with the material of the surface layer). After the removal of the surface layer O, it is then possible to remove a portion of the absorption layer A as the first material in method 200 (e.g., repairing black defects). Figure 3b illustrates selective electron beam-induced etching of the absorption layer A with respect to the buffer layer P. Thus, method 200 can be adjusted so that the etching rate of the absorption layer A is higher compared to the etching rate of the buffer layer P. For example, etching selectivity can be adjusted through the properties of the second gas in method 200 (e.g., through the appropriate selection of the second gas (e.g., water) or through the gas flow rate of the second gas). In addition, etching selectivity can also be adjusted by the properties of the first gas (e.g., through the selection of the first gas (e.g., XeF2) or through the gas volumetric flow rate of the first gas). Thus, in this example, the buffer layer P functions as an etching stopper through the selected etching selectivity.

[0149] Figure 3c shows further results of exemplary method 200 for the removal of a portion of the absorption layer A. First, it is possible here (as described herein) to remove a portion of the buffer layer O. After removing the surface layer O, it is then possible to remove a portion of the absorption layer A as the first material in method 200. It is also possible here to etch a portion of the buffer layer P as an intermediate material. Thus, method 200 can be adjusted so that the etching rate of the absorption layer A, and also the etching rate of the buffer layer P, are higher compared to the etching rate of the capping layer D. The etching rate of the absorption layer A can be made to be similar to the etching rate of the buffer layer P. The etching selectivity can be adjusted as described herein. As shown in Figure 3c, this can achieve selective electron beam-induced etching of the absorption layer A and the buffer layer P with respect to the capping layer D. Thus, in this example, the capping layer D acts as an etching stopper via selected etching selectivity.

[0150] In one example, the surface layer O is not removed separately but through the same process, which is used for the localized removal of the absorbing layer A (or the absorbing layer A and the buffer layer P) in method 200.

[0151] It should also be noted that the parameter space of Method 200 (e.g., gas parameters for the first / second gas, particle beam parameters) can, firstly, depend on the layer currently being processed (by the particle beam). This can, for example, correspond to the stepwise removal of layers (or materials), with the parameter space of Method 200 being adjusted for each layer (or material). However, it is also possible that the parameter space of Method 200 does not depend on the layer currently being processed (by the particle beam). This method can also, for example, sequentially remove multiple layers (or materials).

[0152] Method 200 can also be additionally applied to specific layer structures of lithography objects, different from those shown in Figures 3a-c. A specific layer structure of an object (e.g., an EUV mask) may, as previously stated, include a capping layer adjacent to the reflective layer stack of the object. This capping layer may be adjacent to a first layer. This first layer may be adjacent to a second layer. Thus, proceeding from the substrate, a specific layer structure may include the following layers in this arrangement: substrate, reflective layer stack, capping layer, first layer, second layer. The first and second layers may occupy one layer of the pattern element here. In one example, the first and second layers are specifically designed for the pattern element as absorption layers (e.g., in relation to the lithography method). The absorption of the lithography wavelength (as described herein) can be effectively defined here through the two layers (i.e., the first and second layers). For example, the first and second layers may have different thicknesses to construct the optical properties of the lithographic object. In a first embodiment of a particular layer structure, the capping layer may contain ruthenium and niobium. The first layer may contain tantalum, boron, and oxygen. The second layer may contain ruthenium, chromium, and nitrogen. In a second embodiment, a particular layer structure is defined in that the capping layer essentially contains ruthenium, while the first layer contains tantalum, oxygen, and nitrogen (e.g., tantalum oxynitride, TaON). ​​In this second embodiment, the second layer of the particular layer structure may contain ruthenium and oxygen (this may be, for example, ruthenium oxide, which may be called, for example, RuOx).

[0153] Based on a specific layer structure described herein, a first material (for the purposes of Method 200 or the Method of the First Embodiment) may correspond to a material for a second layer. A second material (for the purposes of Method 200 or the Method of the First Embodiment) may correspond to a material for a first layer. A third material (for the purposes of Method 200 or the Method of the First Embodiment) may correspond to a material for a capping layer. In one example, the first layer of a particular layer structure may also contain ruthenium (for example, as an absorption layer). In that case, the material for the first layer may have the features / properties described herein with respect to the first material.

[0154] For a first embodiment of a specific layered structure, the inventors hereby identify a parameter space particularly favorable for the controlled removal of the first material (in this case, Ru, Cr, N) and the second material (in this case, Ta, B, O) by using a third material (in this case, a Ru, Nb capping layer) for endpoint determination of the method. For favorable results, the first gas used in the test series was XeF2 and the additive gas was H2O. The first test series included the following processing characteristics: a XeF2 precursor reservoir at a temperature of -15°C (used to form the XeF2 gas), an H2O precursor reservoir at a temperature of -36°C (used to form the H2O gas), an electron beam residence time of 0.1 μs, and a flame refresh rate of 1000 μs. In addition, gas chopping was used here to provide a second (additive) gas with a gas chopping ratio of 1:15. In other examples, the two precursor reservoirs can be at different temperatures, for example, below 0°C. For example, the XeF2 precursor reservoir can be -30°C to 0°C or -25°C to -5°C, and the H2O precursor reservoir can be -50°C to -20°C or -45°C to -25°C. In these examples, the flame refresh rate can vary from 0.1 to 10 ms, preferably 0.2 to 5 ms, more preferably 0.5 to 2 ms, and the gas chopping ratio can be selected within the range of 1:5 to 1:25 or 1:10 to 1:20. Gas chopping is performed for a specific sequence duration t Xwhich here includes the continuous provision of the additive gas: for a time t over a specific period X After a time t X has elapsed, the provision of the second gas is stopped for a time t Y until the sequence has elapsed. Thus, the period of the sequence (i.e., t S ) can be described as spanning the total period t S = t X + t Y . After the sequence has elapsed, a new sequence is started, providing the additive gas over the stated time periods, and repeating the operation as desired (e.g., until the end point of the method). Thus, it is possible to effect the provision of the additive gas in a "pulsed" form (rather than a continuous provision). The gas chopping ratio (e.g., 1:15) here denotes the ratio of the provision time t X of the gas over the sequence to the non - provision time t Y . The gas chopping ratio can here be expressed in seconds for the provision time t X and the non - provision time t Y (e.g., a gas chopping ratio of 1:15 can mean that t X is 1 second, t Y is 15 seconds, and the corresponding sequence t S is 16 seconds).

[0155] ​​​​​​​​​​​​​​​​​​​​​​​​The second test series was performed with a XeF2 precursor reservoir at a temperature of -20°C and an H2O precursor reservoir at a temperature of -34°C, with an electron beam residence time of 0.05 μs and a flame refresh rate of 1000 μs. A gas chopping ratio of 1:15 was used here. In other examples, the two precursor reservoirs can be at different temperatures, for example, below 0°C. For example, the XeF2 precursor reservoir can be -40°C to 0°C or -30°C to -15°C, and the H2O precursor reservoir can be -50°C to -20°C or -45°C to -25°C. In these examples, the flame refresh rate can vary from 0.1 to 10 ms, preferably 0.2 to 5 ms, more preferably 0.5 to 2 ms, and the gas chopping ratio can be selected from the range of 1:1 to 1:10, 1:5 to 1:25, or 1:10 to 1:20. The third test series was performed using an electron beam residence time of 0.1 μs and a flame refresh rate of 1000 μs, with the XeF2 precursor reservoir at a temperature of -10°C and the H2O precursor reservoir at a temperature of -36°C. A gas chopping ratio of 1:1 was used here. In other examples, the two precursor reservoirs can be at different temperatures, for example, below 0°C. For example, the XeF2 precursor reservoir can be -20°C to 0°C or -15°C to -5°C, and the H2O precursor reservoir can be -50°C to -20°C or -40°C to -30°C. In these examples, the flame refresh rate can be 0.1 to 10 ms, preferably 0.2 to 5 ms, more preferably 0.5 to 2 ms, and the gas chopping ratio can be selected from the range of 1:1 to 1:10, 1:5 to 1:25, or 1:10 to 1:20.

[0156] For a second embodiment of a specific layer structure, the inventors similarly recognized a parameter space favorable for the controlled removal of the first material (in this case, RuOx, i.e., ruthenium oxide) and the second material (TaON in this case), and used a third material (in this case, a Ru capping layer) to determine the endpoint of the method. For favorable results, the first gas used in each test series in the second embodiment was XeF2, and the additive gas was H2O. However, here we also tested how an additional oxidizing gas (nitrogen dioxide in this case) in the additive gas affects the removal. The test series of the second embodiment were numbered from test series 4 to test series 7, progressing from the test series in the first embodiment of the specific layer structure. Thus, the fourth test series was performed with the XeF2 precursor reservoir at a temperature of -15°C and the H2O precursor reservoir at a temperature of -36°C, with an electron beam residence time of 0.1 μs and a flame refresh rate of 1000 μs. A gas chopping ratio of 1:30 was used here. In other examples, the two precursor reservoirs can be at different temperatures, for example, below 0°C. For example, the XeF2 precursor reservoir can be -30°C to 0°C or -20°C to -5°C, and the H2O gas can be -50°C to -20°C or -40°C to -30°C. The fifth test series corresponds to the parameters specified herein for the fourth test series, with the additional provision of nitrogen dioxide (gas volume flow rate 1.2 sccm). The sixth test series was run with the XeF2 precursor reservoir at a temperature of -20°C and the H2O precursor reservoir at a temperature of -36°C, with an electron beam residence time of 0.1 μs and a flame refresh rate of 1000 μs. A gas chopping ratio of 1:30 was used here. In other examples, the two precursor reservoirs may be at different temperatures, for example, below 0°C. For example, the XeF2 precursor reservoir may be -40°C to 0°C or -30°C to -10°C, and the H2O precursor reservoir may be -50°C to -20°C or -40°C to -30°C. The seventh test series corresponds to the parameters specified herein for the sixth test series, with the addition of nitrogen dioxide (gas volume flow rate 1.2 sccm).In scanning electron microscopy images, the sharper edge profiles of the etched structures were attributed to test series that had nitrogen dioxide and water as additive gases. It should also be noted that, for the processing method in the second embodiment of a particular layered structure, the frame refresh rate can also be varied from 0.1 to 10 ms, preferably 0.2 to 5 ms, and more preferably 0.5 to 2 ms, and the gas chopping ratio can also be selected from the range of 1:1 to 1:10, 1:5 to 1:25, or 1:10 to 1:20.

[0157] In the test series described herein, the signal intensity of electrons emitted from the working region was determined during the method (i.e., removal of the first and second materials, and also treatment of the third material with a particle beam). The intensity was determined here according to the dose of the particle beam (electron beam in the examples). The dose here corresponds to the dose introduced during the method through the region to be etched (working region), and the intensity was determined via a backscattered electron detector. It was possible here to verify that the intensity depended on the material on which the particle beam acted. It was possible here to assign a specific intensity value (or range of values) to a specific material or a specific layer structure. Therefore, it was possible to monitor the removal of various layers of a specific layer structure via the progression of intensity as a function of dose. For example, in the case of a (significant) change in intensity (e.g., a local positive and / or negative increase occurs as the intensity progresses), it was possible to conclude that, as a result of removal, a change occurred from a previously exposed layer to a different layer (underlying) that is now also exposed but causing a different electron intensity signal. For example, intensity I X The material of the previously exposed layer having intensity I is detected. Y Detecting the material of other layers having (I Y X (or I Y >I X )) was possible. In the transition phase, I x and I y ​It was possible to detect decreasing (increasing) intensity during the progression, which was caused by a decrease (increase) in intensity progression. In addition, when the intensity progressed (mainly) constant, it was possible to conclude, for example, that the exposed layer had been treated. This was due to the fact that no (significant) change in intensity appeared, which could be explained by a change in the exposed material. For example, these characteristic properties of intensity progression with changes in the exposed layer and also with treatment of the exposed layer can serve to determine the endpoint of this method.

[0158] In addition, for the test series described herein (i.e., test series 1-7), the corresponding etching depth was determined according to the selected (introduced) dose of the particle beam. For this purpose, for the test series, numerous geometrically identical test structures (or the same test area / working area to be etched) were subjected to the corresponding method while varying only the dose (introduced) at various test structures. Thus, it was possible to evaluate the effect of the particle beam dose (introduced) on the corresponding method. The etching depth of the test structures was determined here by atomic force microscopy. These information items can be used for the progression of etching depth as a function of the (introduced) dose for the corresponding method, and here the etching depth is plotted on the vertical axis and the selected (introduced) dose is plotted on the horizontal axis. The progression of etching depth similarly allowed for conclusions to be drawn for determining specific layer structures. The (local) increase in the progression of edge depth was determined here by linear regression, and the (local) increase corresponds to the etching rate. Due to material-specific differences, different materials in a particular layer structure also have different etching rates. These differences in etching rates could be used to infer which characteristic sections of the etching profile progression could be assigned to the first layer, the second layer, or the capping layer.

[0159] Therefore, Method 200 includes, in one example, determining the endpoint of the Method based on a specific etching rate (or a specific difference in etching rates) and / or a specific intensity progression in the electronic signal. The determination of the etching rate and / or intensity progression (as described herein) may precede, for example, the actual removal of the first material (e.g., in a calibration experiment).

[0160] It is also conceivable that a particular layer structure may be defined by further layers. For example, it is conceivable that at least one buffer layer exists between the capping layer and the first layer. In this case, the buffer layer may include the features of buffer layer P shown in Figures 3a-c described herein. In this regard, the buffer layer of a particular layer structure may correspond to an intermediate material (described herein). A particular layer structure may also be designed to have at least a third layer, as well as the first and second layers, the third layer may constitute an absorption layer of the pattern element. Thus, for example, it is possible to construct three or more absorption layers on a lithographic object for a pattern element. For example, the first and second layers may be alternately bonded on top of the capping layer (for example, the layer sequence may include capping layer, first layer, second layer, first layer, second layer, etc.).

[0161] It should be noted that the ruthenium-containing absorption layer specified herein may contain ruthenium and at least one metal from the following: Nb, Zr, Y, B, Ti, La, Mo, Co, Re. In addition, the ruthenium-containing material may contain at least one from the following: N, O, H, C.

[0162] In addition, ruthenium-containing materials may also contain at least one transition metal from the following: Mo, Ta, W, Ti, Cr, Hf, Ni, V, Zr, Rh, Nb, and Pd. In further examples, ruthenium-containing materials may also contain: Cr, Ni, Co, V, Nb, Mo, W, Re, and Ta.

[0163] In principle, in mask repair, it may also be necessary to generate or deposit materials (as repair materials). For example, electron beam-induced deposition of ruthenium (e.g., Ru as described herein). a Z b In the case of mask repair by means of (in the form of), ruthenium oxide or other ruthenium-containing deposits may also result in undesirable material deposition. Undesirable material deposition can be caused, for example, by strands of electron beam that do not hit the target and the secondary electrons generated thereby. In addition, undesirable deposition (repair material) can be caused by secondary electrons generated at sites adjacent to the repaired defect, and also by secondary electrons that escape at the vertical edges of the treated material and proliferate to sites adjacent to the repaired defect. It is equally possible that forward-scattered electrons (FSE) escaping from the flanks of the existing material and back-scattered electrons (BSE) escaping from the surface in the environment of the repaired site can also contribute to undesirable material deposition.

[0164] Therefore, a further application of Method 200 is the removal of material deposited by these described mechanisms on an area adjacent to the repaired defect. Thus, in one example, Method 200 also includes generating repair material.

[0165] In the process of generating repair materials, it is possible to use a deposition gas in electron beam-induced deposition. The following are examples of (metal, transition element, main group) alkyl compounds, e.g., cyclopentadienyl (Cp) or methylcyclopentadienyl (MeCp), trimethylplatinum (CpPtMe3 or MeCpPtMe3), tetramethyltin (SnMe4), trimethylgallium (GaMe3), ferrocene (Cp2Fe), bisarylchromium (Ar2Cr), ruthenocene (Cp2Ru), and at least one of these types of compounds may be included as the deposition gas of the present invention. In addition, the following are examples of (metal, transition element, main group) carbonyl compounds, e.g., chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octacarbonyl (Co2(CO)8), trilthenium dodecacarbonyl (Ru3(CO)). 12 At least one of pentacarbonyl iron Fe(CO)5 and other compounds of this kind may be included as the first gas in the present invention. In addition, one of the following (metal, transition element, main group) alkoxides, such as tetraethoxysilane Si(OC2H5)4, tetraisopropoxytitanium Ti(OC3H7)4 and other compounds of this kind may be included as the first gas in the present invention.

[0166] Furthermore, the deposited gas of the present invention may also include at least one of the following: (metal, transition element, main group) halides, e.g., WF6, WCl6, TiCl6, BCl3, SiCl4, and other compounds of this kind. In addition, the present invention may include at least one of the following: (metal, transition element, main group) complexes, e.g., copper bis(hexafluoroacetylacetonate)Cu(C5F6HO2)2, dimethyltrifluoroacetylacetonate gold Me2Au(C5F3H4O2), dicarbonylbisdiketner torthenium, and other compounds of this kind as deposited gases. The present invention may also include at least one of the following: organic compounds, e.g., CO, CO2, aliphatic or aromatic hydrocarbons, components of vacuum pump oil, volatile organic compounds, and further such compounds as deposited gases.

[0167] Method 200 (or the method of the first embodiment) can be carried out via an apparatus of the present invention as described herein. In one example, the apparatus includes a mask repair apparatus for repairing or processing a lithography mask. The apparatus can be used to locate and repair or remedy mask defects. The apparatus may include parts, for example, the apparatus described in U.S. Patent Application Publication 2020 / 103751 (see the corresponding part in Figure 3A). The apparatus may include, for example, a control unit, which may be part of a computer system. In one example, the apparatus may be constructed such that the computer system and / or control unit control the processing parameters of the method of the first embodiment as disclosed herein. This configuration can enable controlled and also automated implementation of the method according to the present invention without the intervention of, for example, manual implementation, as specified herein. This apparatus configuration can be achieved or enabled, for example, via a computer program according to the present invention as described herein.

[0168] Figure 4 shows a schematic section of an exemplary apparatus 400 according to the present invention. Apparatus 400 can be constructed so that it can carry out method 200 or a method in a first and / or second aspect of the present invention. In one example, apparatus 400 of Figure 4 includes a mask repair apparatus for repairing or processing a lithography mask. Apparatus 400 can be used to locate and repair or remedy mask defects.

[0169] The exemplary apparatus 400 in Figure 4 may include, for example, a scanning electron microscope (SEM) 101 for providing a particle beam, which in this embodiment is an electron beam 409. An electron gun 406 can generate the electron beam 409, which can be directed to a lithography mask 402 as a focused electron beam 110 by one or more beamforming elements 408, the lithography mask 402 being placed on a sample stage 404 (or chuck). In addition, the scanning electron microscope can be used to control the parameters / characteristics of the electron beam (e.g., acceleration voltage, residence time, current, focusing, spot size, etc.). The parameters of the electron beam can be adjusted, for example, in relation to the parameter space of the method described herein. The electron beam 409 can function as an energy source for initiating local chemical reactions in the working region of the lithography mask 402. This can be utilized, for example, for the method described herein (e.g., for performing electron beam-induced etching in the first embodiment). In addition, the electron beam 409 can be used to image the lithography mask 102. The apparatus 400 may include one or more detectors 414 for detecting electrons (e.g., secondary electrons, backscattered electrons).

[0170] To perform the corresponding methods specified herein, the exemplary apparatus 400 of Figure 4 may include at least two reservoir vessels for at least two different process gases or precursor gases. A first reservoir vessel G1 may store a first gas. A second reservoir vessel G2 may store a second gas. In some examples, the temperatures of reservoir vessels G1 and G2 may be controlled independently of each other. The second gas may also be considered an additive gas. In addition, in the exemplary apparatus 400, each reservoir vessel G1, G2 has its own gas inlet systems 432, 447, which may be terminated at a nozzle near the incident point of the electron beam 410 on the lithography mask 402. Each reservoir vessel G1, G2 has its own control valves 446, 431, making it possible to control the amount of the corresponding gas supplied per unit time, i.e., the gas flow rate of the corresponding gas. This can be done in such a way that the gas volumetric flow rate is controlled at the incident point of the electron beam 410. In addition, the apparatus 400 may, in one example, include a further reservoir container for additional gases that can be added to the method of the first embodiment as one or more (additive) gases (e.g., oxidizing agents, reducing agents, halides as described herein). The apparatus 400 in Figure 4 may include a pump system for generating and maintaining the required pressure in the processing chamber 485.

[0171] Apparatus 400 may also include a control unit (or regulator unit) 418, which may be part of a computer system 420, for example. Apparatus 400 may, in one example, be constructed such that the computer system 420 and / or the control unit 418 control the processing parameters of the method disclosed herein. This configuration can enable a controlled or automated implementation of the method according to the present invention without intervention by, for example, manual implementation, as specified herein. This configuration of Apparatus 400 can be achieved or enabled, for example, through a computer program according to the present invention as described herein.

[0172] Figure 5 shows a schematic cross-section of a lithography object through a pattern element, where the pattern element can be processed by the exemplary method of the present invention. For example, by means of the method of the first embodiment, it is possible to locally remove three layers 1, 2, and 3 of the pattern element within the working region.

[0173] An exemplary configuration may be, for example, as follows: The first layer 1 of the pattern element may include a first (ruthenium-containing) material (as described herein). The second layer 2 of the pattern element may include a second (tantalum-containing) material (as described herein). The third layer 3 of the pattern element may include a further (tantalum-containing) material (as described herein). The second layer may be formed from, for example, tantalum borate (e.g., TaBO) or may include the said material, and / or the third layer may be formed from, for example, tantalum boronite (e.g., TaBN) or may include the said material. It should be noted that the layer thicknesses of the first, second and / or third layers of the pattern element are only schematically shown in Figure 5. Thus, in one example, the layer thickness of the second layer may also be less than the layer thickness of the first and / or second layers (although other geometric variations are also conceivable). The local removal of at least one of the three layers described herein is not necessarily limited here to a specific layer thickness sequence of the three layers.

[0174] Figure 5 similarly shows the capping layer D, the reflective layer stack ML, and the substrate of the lithography object. The object in Figure 5 can be, for example, a mask for EUV lithography. For example, the mask can include a phase-shifted EUV mask and / or (essentially) radiation-absorbing EUV mask. A patterned element having the first, second, and third layers 1, 2, 3 can be designed here to be phase-shifted and / or radiation-absorbing for EUV lithography, respectively.

[0175] For example, in the case of defects in a mask, excess material in the pattern element layer can be removed by one example of the method described herein. The defect may be, for example, a black defect. To remove the first layer 1 in the working region, xenon difluoride may be used with water as the first processing gas (as described herein). To remove the second and / or third layer, xenon difluoride may be used with nitrogen dioxide and tetraethyl orthosilicate as the second processing gas (as described herein). The capping layer D may here contain ruthenium. The capping layer D may here function as an etching stopper in the removal of the second and / or third layer.

[0176] Further embodiments of the present invention may include the following:

[0177] (Example 1) A method for processing lithographic objects, A step of providing a first treatment gas, A step of providing a particle beam into the working region of an object to remove a first material (1) within the working region, at least partially based on a first processing gas. A method comprising including, wherein the first material (1) contains ruthenium.

[0178] (Example 2) The method according to Example 1, wherein the first processing gas contains xenon difluoride molecules.

[0179] (Example 3) The method according to Example 1 or 2, wherein the first treatment gas contains water molecules.

[0180] (Example 4) A step of providing a second treatment gas, A step of providing a particle beam into a working region to remove a second material (2) in the working region, at least partially based on a second processing gas. A method according to any one of Examples 1 to 3, further comprising the second material (2) containing tantalum.

[0181] (Example 5) The method according to Example 4, wherein the second processing gas contains xenon difluoride molecules.

[0182] (Example 6) The method according to Example 4 or 5, wherein the second processing gas contains nitrogen dioxide molecules.

[0183] (Example 7) A method according to any of Examples 4 to 6, wherein the second processing gas contains tetraethyl orthosilicate molecules.

[0184] (Example 8) A step of providing a particle beam into the working region for the removal of further material (3) in the working region, at least partially based on a second processing gas, It further includes, and further material (3) contains tantalum, A method according to any of Examples 4 to 7, wherein the further material (3) has a different material composition from the second material (2).

[0185] (Example 9) The method according to Example 8, wherein the molar ratio of tantalum in the further material (3) is higher or essentially the same as the molar ratio of other elements contained in the further material.

[0186] (Example 10) The method according to either Example 8 or 9, wherein the additional material (3) includes at least one of the following: tantalum oxide, tantalum borate, tantalum nitride, and tantalum boronite.

[0187] (Example 11) A method according to any of Examples 1 to 10, wherein the molar ratio of ruthenium in the first material (1) is higher than or essentially the same as the molar ratio of other elements contained in the first material.

[0188] (Example 12) A method according to any of Examples 4 to 11, wherein the molar ratio of tantalum in the second material (2) is higher than or essentially the same as the molar ratio of other elements contained in the second material.

[0189] (Example 13) A method according to any of Examples 4 to 12, wherein the second material (2) further comprises oxygen, boron and / or nitrogen.

[0190] (Example 14) The second material (2) is a method according to any of Examples 4 to 13, comprising at least one of the following: tantalum oxide, tantalum borate, tantalum nitride, and tantalum boronite.

[0191] (Example 15) A method according to any of Examples 1 to 14, wherein the particle beam includes an electron beam.

[0192] (Example 16) A method according to any one of Examples 1 to 15, further comprising determining an endpoint for material removal, at least in part, based on detecting electrons emitted from the object.

[0193] (Example 17) A method according to any of Examples 1 to 16, wherein the material is removed at least partially over a predetermined period of time.

[0194] (Example 18) A method according to any of Examples 1 to 17, wherein the removed material includes the layer material of the pattern element of the object.

[0195] (Example 19) A method according to any of Examples 1 to 18, which is performed in a manner that repairs defects in the object.

[0196] (Example 20) A method according to any of Examples 1 to 19, wherein the object includes a mask for EUV lithography.

[0197] (Example 21) Apparatus (400) for processing a lithographic object, comprising means for providing a first processing gas, Means for providing a particle beam within the working region of an object, wherein the apparatus is constructed to carry out a method according to any of Examples 1 to 20. A device including a device.

[0198] (Example 22) A computer program, when executed on a computer system, that includes instructions causing the computer system and / or apparatus according to Example 21 to perform the method according to any of Examples 1 to 20. [Explanation of Symbols]

[0199] Detailed view of the 1000 EUV mask D Local state R (Restored state) 1010 Black Defect 1020 Original defect area PE pattern element RV Repair Procedure O surface layer A Absorption layer P buffer layer D Capping layer ML deposited multilayer film or reflective layer stack S base material d Layer thickness 400 Exemplary Apparatus 402 Lithography Mask 404 Sample Stage 406 Electronic Gun 408 Beamforming element 409 Electron beam 410 Electron beam 414 detectors 418 Control Unit 420 Computer Systems 431 Control valve 432 Gas Inlet System 446 Control valve 447 Gas Inlet System 485 Processing Chamber G1 First reservoir container G2 Second reservoir container

Claims

1. 1. A method for processing a lithographic object, comprising the steps of: providing a first gas comprising a first molecule; providing a particle beam within a working region of the object to remove a first material within the working region based at least in part on a first gas; Including, the first material corresponds to a material of an absorbing layer (A) of a pattern element of the lithographic object, the first material comprising ruthenium; The lithographic object comprises a capping layer (D) and a buffer layer (P), The buffer layer (P) is adjacent to the capping layer (D), The buffer layer (P) is adjacent to the absorbent layer (A), The method, wherein said buffer layer (P) does not contain ruthenium.

2. The method of claim 1, wherein the buffer layer (P) comprises tantalum.

3. The method of claim 1 or 2, wherein the first molecule comprises a polar molecule having a dipole moment.

4. The method of claim 1 or 2, wherein the first molecule comprises water, H2O.

5. 3. The method according to claim 1 or 2, wherein the layer thickness (d) of the first material is at least 20 nm, preferably at least 35 nm, more preferably at least 50 nm, most preferably at least 60 nm.

6. The method of claim 1 or 2, wherein the first material in the active area is completely removed.

7. The method of claim 1 or 2, wherein the first material is capable of absorbing radiation associated with the object.

8. The method of claim 1 or 2, wherein the first material further comprises at least a second element.

9. The method of claim 8 , wherein the second element comprises at least one of the following: a metal, a semiconductor.

10. 9. The method of claim 8, wherein the second element comprises at least one of the following: tantalum, chromium, nitrogen, and oxygen.

11. The method of claim 8 , wherein the ruthenium forms a chemical compound with a second element.

12. The method according to claim 1 or 2, carried out in such a manner that a second material adjacent to the first material is at least partially exposed in the active area by removal.

13. The method of claim 12 , wherein the first material and the second material differ in at least one element.

14. The method of claim 12 , wherein the second material comprises tantalum and / or a tantalum compound.

15. The method of claim 12 further comprising removing the second material in the active region.

16. The method of claim 15 , wherein the method is performed in such a manner that a third material adjacent to the second material is at least partially exposed in the active area by removing the second material.

17. The method of claim 16 , wherein the third material comprises ruthenium.

18. The method of claim 16 , wherein the first material and the third material comprise the same element.

19. The method according to claim 16 , wherein the second material and / or the third material correspond to a layer material of a pattern element of the object and / or a material of a capping layer of a reflective layer stack.

20. The method of claim 1 or 2, wherein the first molecule comprises a halogen atom.

21. The method of claim 1 or 2, wherein the first molecule comprises a noble gas halide.

22. The rare gas halide is: xenon difluoride, XeF 2 , xenon dichloride, XeCl 2 , xenon tetrafluoride, XeF 4 , xenon hexafluoride, XeF 6 The method of claim 21 , comprising at least one of:

23. The method of claim 1 or 2, further comprising providing a second gas comprising a second molecule, wherein removal of the first material is also based at least in part on the second gas.

24. 24. The method of claim 23, wherein the dipole moment associated with the second molecule comprises at least 1.6D, preferably at least 1.7D, more preferably at least 1.8D, and most preferably at least 1.82D.

25. The second molecule is water, H 2 O, and / or heavy water, D 2 The method of claim 22 , comprising:

26. 3. The method of claim 1 or 2, wherein the particle beam is at least partially based on an accelerating voltage of less than 3 kV, preferably less than 1 kV, more preferably less than 0.6 kV.

27. 24. The method of claim 23, wherein the temperature is based at least in part on a temperature associated with the first gas and / or the second gas and is less than 0° C. (273.15 K), preferably less than −5° C. (268.15 K), more preferably less than −10° C. (263.15 K), and most preferably less than −15° C. (258.15 K).

28. The method of claim 1 or 2, wherein the particle beam comprises an electron beam.

29. 3. The method according to claim 1 or 2, carried out in such a way that defects in the object are repaired.

30. The method of claim 1 or 2, wherein the object comprises an EUV mask and / or a DUV mask.

31. 1. An apparatus for processing a lithographic object, comprising: means for providing a first gas; Means for providing a particle beam within an active region of the object 3. An apparatus configured to carry out the method according to claim 1 or 2, comprising:

32. 3. A method for producing a lithographic object by treating it with the method according to claim 1 or 2.

33. 1. A method for processing a semiconductor-based wafer, comprising:

3. A method comprising the step of lithographically transferring a pattern associated with a lithographic object onto a wafer, the object having been processed according to the method of claim 1 or 2.

34. A computer program comprising instructions which, when executed on a computer system, cause the computer system to carry out the method according to claim 1 or 2.

Images