OPTOELECTRONIC DEVICE WITH LOW-REFRACTIVE-INDEX LAYER - Patent application

Abstract

A semiconductor device having multiple layers extending through interfacial and non-interfacial portions of at least one side defined by a transverse axis of the device. A lower(er) refractive index layer, which may include a low refractive index material having a first refractive index at a wavelength, is disposed on the first layer surface at least in the interfacial portion. A higher refractive index layer, which may include a high refractive index material having a second refractive index at a wavelength, is disposed on an exposed layer surface of the device to define a refractive index interface with the lower(er) refractive index layer at the interfacial portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on the second layer surface in the non-interfacial portion. The higher refractive index layer may cover the deposited material in the non-interfacial portion.

Description

[Technical Field]

[0001] Related Applications This application is a continuation of U.S. Provisional Patent Application No. 63 / 056,499, filed July 24, 2020, U.S. Provisional Patent Application No. 63 / 064,633, filed August 12, 2020, U.S. Provisional Patent Application No. 63 / 090,098, filed October 9, 2020, U.S. Provisional Patent Application No. 63 / 107,393, filed October 29, 2020, U.S. Provisional Patent Application No. 63 / 153,834, filed February 25, 2021, and U.S. Provisional Patent Application No. 63 / 153,834, filed February 25, 2021. This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 163,453, filed March 19, 2020, U.S. Provisional Patent Application No. 63 / 181,100, filed April 28, 2021, U.S. Provisional Patent Application No. 63 / 122,421, filed December 7, 2020, and U.S. Provisional Patent Application No. 63 / 141,857, filed January 26, 2021, the contents of each of which are incorporated by reference in their entirety.

[0002] The present disclosure relates to layered semiconductor devices, and in particular to layered optoelectronic devices having an interface between a lower(er) refractive index coating and a higher refractive index coating, where electromagnetic (EM) radiation can pass through the interface, including when the lower(er) refractive index layer is forward relative to the higher refractive index layer, in the optical path of the electromagnetic (EM) radiation passing through the interface, whether the EM radiation is emitted by the device or passes entirely through. [Background technology]

[0003] In an optoelectronic device, such as an organic light-emitting diode (OLED), at least one semiconductor layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that migrate toward each other through the at least one semiconductor layer. When a pair of holes and electrons combine, a photon can be emitted.

[0004] An OLED display panel can include a plurality of (sub)pixels, each having an associated pair of electrodes and at least one semiconductor layer therebetween. In some non-limiting examples, the (sub)pixels may be selectively driven by a drive circuit including a plurality of thin film transistor (TFT) structures electrically coupled by conductive metal lines, in some non-limiting examples, within a substrate on which the electrodes and at least one semiconductor layer are deposited. The various layers and coatings of such panels are typically formed by vacuum-based deposition processes.

[0005] Such display panels may be used in electronic devices such as, by way of non-limiting example, mobile phones.

[0006] In some applications, during the OLED manufacturing process, at least one thin film of deposition layers is selectively deposited to form device features such as, but not limited to, electrodes and / or conductive elements electrically coupled thereto, for each (sub)pixel of the panel. Horizontal The objective may be to provide a conductive deposition layer in a pattern across either or both the surface and cross section.

[0007] In some non-limiting applications, the goal may be to increase the transmission of EM radiation and / or decrease the absorption of EM radiation to provide improved mechanisms along the optical path through at least a portion of the device in at least a wavelength subrange of the EM spectrum. The present invention provides, for example, the following items. (Item 1) 1. A semiconductor device having a plurality of layers and extending through at least one lateral interfacial and non-interfacial portion defined by a lateral axis thereof, comprising: a lower refractive index layer disposed on at least the first layer surface at the interface portion, the lower refractive index layer having a first refractive index at wavelengths within the first wavelength range; a higher refractive index layer having a second refractive index at wavelengths within a second wavelength range disposed on a second exposed layer surface of the device to define a refractive index interface with the lower refractive index layer(s) at the interface portion, the higher refractive index layer having a second refractive index at wavelengths within a second wavelength range, the second refractive index exceeding the first refractive index; A device comprising: (Item 2) 2. The device according to item 1, wherein the first wavelength range is selected from at least one of about 315 to 400 nm, about 450 to 460 nm, about 510 to 540 nm, about 600 to 640 nm, about 456 to 624 nm, about 425 to 725 nm, about 350 to 450 nm, about 300 to 450 nm, about 300 to 550 nm, about 300 to 700 nm, about 380 to 740 nm, about 750 to 900 nm, about 380 to 900 nm, and about 300 to 900 nm. (Item 3) 3. The device of claim 1, wherein the first refractive index varies over the first wavelength range by no more than at least one of about 0.4, about 0.3, about 0.2, and about 0.1. (Item 4) 4. The device of any one of items 1 to 3, wherein the first refractive index is less than or equal to at least one of about 1.7, about 1.6, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, and about 1.25. (Item 5) 5. The device of any one of items 1 to 4, wherein the first refractive index is at least one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, and about 1.25 to 1.4. (Item 6) 6. The device of any one of items 1 to 5, wherein the lower(er) refractive index layer comprises a low refractive index material. (Item 7) Item 7. The device of item 6, wherein at least one of the low refractive index layer and the low refractive index material exhibits an extinction coefficient within the first wavelength range that is less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, and about 0.01. (Item 8) 8. The device of claim 6 or 7, wherein at least one of the low refractive index layer(s) and the low refractive index material is substantially transparent. (Item 9) Item 9. The device of any one of items 6 to 8, wherein at least one of the low refractive index layer and the low refractive index material comprises at least one void therein. (Item 10) 10. The device of any one of items 6 to 9, wherein the low refractive index material comprises at least one of an organic compound and an organic-inorganic hybrid material. (Item 11) 11. The device according to any one of items 1 to 10, wherein the second wavelength range is selected from at least one of about 315 to 400 nm, about 450 to 460 nm, about 510 to 540 nm, about 600 to 640 nm, about 456 to 624 nm, about 425 to 725 nm, about 350 to 450 nm, about 300 to 450 nm, about 300 to 550 nm, about 300 to 700 nm, about 380 to 740 nm, about 750 to 900 nm, about 380 to 900 nm, and about 300 to 900 nm. (Item 12) 12. The device of any one of items 1 to 11, wherein the second wavelength range is different from the first wavelength range. (Item 13) 13. The device of any one of items 1 to 12, wherein the second refractive index is at least one of about 1.7, about 1.8, and about 1.9. (Item 14) 14. The device of any one of items 1 to 13, wherein the second refractive index exceeds the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.5. (Item 15) 15. The device of any one of items 1 to 14, wherein a second maximum refractive index corresponding to a maximum value of the second refractive index measured within the second wavelength range exceeds a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range. (Item 16) Item 16. The device of item 15, wherein the first maximum refractive index corresponds to a first wavelength within the first wavelength range that is different from a second wavelength within the second wavelength range to which the second maximum refractive index corresponds. (Item 17) 17. The device of claim 15 or 16, wherein the second maximum refractive index exceeds the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.7. (Item 18) 18. The device of any one of items 1 to 17, wherein the higher refractive index layer comprises a physical coating selected from at least one of a capping layer, a barrier coating, an encapsulation layer, a thin film encapsulation layer, and a polarizing layer. (Item 19) 19. The device of any one of items 1 to 18, wherein the higher refractive index layer comprises an air gap. (Item 20) 19. The device of any one of items 1 to 18, wherein the higher refractive index layer comprises a high refractive index material. (Item 21) Item 21. The device of item 20, wherein at least one of the higher refractive index layer and the high refractive index material exhibits an extinction coefficient within the second wavelength range that is less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, and about 0.01. (Item 22) 22. The device of claim 20 or 21, wherein at least one of the higher refractive index layer and the high refractive index material is substantially transparent. (Item 23) 23. The device of any one of items 20 to 22, wherein the high refractive index material comprises an organic compound. (Item 24) 24. The device of any one of items 1 to 23, wherein the first layer surface is of an underlying layer having a third refractive index that exceeds the first refractive index at wavelengths within a third wavelength range. (Item 25) Item 25. The device according to item 24, wherein the third wavelength range is selected from at least one of about 315 to 400 nm, about 450 to 460 nm, about 510 to 540 nm, about 600 to 640 nm, about 456 to 624 nm, about 425 to 725 nm, about 350 to 450 nm, about 300 to 450 nm, about 300 to 550 nm, about 300 to 700 nm, about 380 to 740 nm, about 750 to 900 nm, about 380 to 900 nm, and about 300 to 900 nm. (Item 26) 26. The device of claim 24 or 25, wherein the third wavelength range is different from the first wavelength range. (Item 27) 27. The device of any one of items 24 to 26, wherein the third refractive index is at least one of about 1.7, about 1.8, and about 1.9. (Item 28) 28. The device of any one of items 24 to 27, wherein the third refractive index exceeds the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.5. (Item 29) 29. The device of any one of items 24 to 28, wherein a third maximum refractive index corresponding to a maximum value of the third refractive index measured within the third wavelength range exceeds a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range. (Item 30) 30. The device of claim 29, wherein the first maximum refractive index corresponds to a first wavelength within the first wavelength range that is different from a third wavelength within the third wavelength range to which the third maximum refractive index corresponds. (Item 31) 31. The device of claim 29 or 30, wherein the third maximum refractive index exceeds the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.7. (Item 32) 32. The device of any one of items 24 to 31, wherein the underlayer is a semiconductor layer of an optoelectronic device. (Item 33) Item 33. The device of item 32, wherein the underlayer is selected from an electron transport layer and an electron injection layer. (Item 34) 34. The device according to any one of the preceding items, wherein the average layer thickness of the lower(er) refractive index layer is less than or equal to the average layer thickness of the higher refractive index layer. (Item 35) Item 35. The device of item 34, wherein the average layer thickness of the lower(er) refractive index layer is less than or equal to at least one of about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 10 nm, about 8 nm, and about 5 nm. (Item 36) Item 36. The device according to item 34 or 35, wherein the average layer thickness of the lower(er) refractive index layer is at least one of about 5 to 20 nm and about 5 to 15 nm. (Item 37) 37. The device of any one of items 1 to 36, wherein the low refractive index material exhibits a surface energy of about 25 dynes / cm or less and the first refractive index is about 1.45 or less. (Item 38) 38. The device of any one of items 1 to 37, wherein the low refractive index material exhibits a surface energy of about 20 dynes / cm or less and the first refractive index is about 1.4 or less. (Item 39) 39. The device of any one of items 1 to 38, further comprising a quantity of deposition material disposed on the second layer surface in the non-interface portion. (Item 40) 40. The device of claim 39, wherein the lower refractive index layer comprises a patterned coating. (Item 41) Item 41. The device of item 40, wherein an initial sticking probability for forming a closed coating of the deposition material on a surface of the patterned coating is substantially less than the initial sticking probability for forming the deposition material on the first layer surface, and the patterned coating is substantially devoid of a closed coating of the deposition material. (Item 42) 42. The device of any one of items 39 to 41, wherein the interfacial portion corresponds to the lateral first portion and the non-interfacial portion corresponds to the lateral second portion where the deposited material forms a closed coating. (Item 43) 43. The device of any one of items 39 to 42, wherein the amount of deposited material comprises at least one grain structure comprising a particulate material. (Item 44) Item 44. The device of item 43, wherein the at least one particle structure forms a discontinuous layer between the lower refractive index layer(s) and the higher refractive index layer(s). (Item 45) 45. The device of any one of claims 39 to 44, wherein the deposited material prevents definition of the refractive index interface in the non-interface portion. (Item 46) 46. ​​The device of any one of items 39 to 45, wherein the higher refractive index layer covers the deposited material in the non-interface portion. (Item 47) 47. The device of any one of items 1 to 46, wherein the second layer surface and the first layer surface are the same. (Item 48) Item 48. The device of any one of items 1 to 47, wherein the lower(er) refractive index layer extends into the non-interface portion and the second layer surface is an exposed layer surface of the lower(er) refractive index layer therein. (Item 49) 49. The device of any one of items 1 to 48, wherein the device is adapted to allow EM radiation to engage a surface of the device along an optical path in a first direction that is at an angle to a plane defined by the plurality of transverse axes of the device. (Item 50) Item 50. The device of item 49, wherein the EM radiation is emitted by the device and the first direction is a direction in which the EM radiation is extracted from the device. (Item 51) 50. The device of claim 49, wherein the EM radiation is incident on an exterior surface of the device and at least partially transmits through the exterior surface, and the first direction is the direction in which the EM radiation is incident on the device. (Item 52) 52. The device of any one of items 1 to 51, wherein the interface portion comprises a first emission region for emitting a first EM signal along an optical path in a first direction at an angle to a plane defined by the plurality of transverse axes of the device, where EM radiation is extracted from the device. (Item 53) A substrate; at least one semiconductor layer disposed thereon; the first emission region includes a first electrode and a second electrode; the first electrode is disposed between the substrate and the at least one semiconductor layer; the at least one semiconductor layer is disposed between the first electrode and the second electrode; Item 53. The device of item 52, wherein the lower refractive index layer is disposed between the second electrode and the higher refractive index layer. (Item 54) a second emission region in the non-interface portion for emitting a second EM signal along the optical path, the second emission region further comprising a third electrode and a fourth electrode; the third electrode is disposed between the substrate and the at least one semiconductor layer; the at least one semiconductor layer is disposed between the third electrode and the fourth electrode; the non-interface portion is substantially devoid of the lower refractive index layer; Item 54. The device of item 53, wherein the fourth electrode is disposed between the third electrode and the higher refractive index layer. [Brief explanation of the drawings]

[0008] Examples of the present disclosure will now be described by reference to the following drawings, in which the same reference numbers in different drawings indicate the same and / or, in some non-limiting examples, similar and / or corresponding elements. [Figure 1] A simplified block diagram from a cross section of an exemplary device having a lower refractive index layer in front of a higher refractive index layer (in an optical path generally indicated by arrow OC) according to an example of the present disclosure. [Figure 2] 1 is a graph plotting refractive index values ​​as a function of surface tension for various example materials according to the examples. [Figure 3A] FIG. 2 is a simplified block diagram from a cross section of an exemplary version of the device of FIG. 1 having at least one discontinuous layer of particle structures disposed on an exposed layer surface of the lower(er) refractive index layer, according to an example of the present disclosure. [Figure 3B] FIG. 3B is a simplified block diagram in plan view of the device of FIG. 3A. [Figure 4A] 2 is a simplified block diagram from a cross section of an exemplary version of the device of FIG. 1 having multiple layers in a lateral direction formed by selectively depositing a lower(er) refractive index layer at the lateral interface portions, followed by depositing a closed coating of deposition material at the non-interface portions, and then depositing a higher refractive index layer thereon, according to an example of the present disclosure. [Figure 4B] 2 is a simplified block diagram from a cross section of an exemplary version of the device of FIG. 1 having multiple layers in a lateral direction formed by selectively depositing a lower(er) refractive index layer at the lateral interface portions, followed by depositing a closed coating of deposition material at the non-interface portions, and then depositing a higher refractive index layer thereon, according to an example of the present disclosure. [Figure 5] 1 is a plot of transmittance as a function of wavelength for various example samples according to an example of the present disclosure. [Figure 6] 5 is a schematic diagram illustrating an exemplary process for depositing a patterned coating on an underlying exposed layer surface in a first lateral portion of an exemplary version of the device of FIG. 4 according to one example of the present disclosure. [Figure 7] 7 is a schematic diagram illustrating an exemplary process for depositing deposition material on a second lateral portion of an exposed layer surface that includes the deposition pattern of the patterned coating of FIG. 6. FIG. [Figure 8A] FIG. 5 is a schematic diagram illustrating an exemplary version of the device of FIG. 4 in cross section. [Figure 8B] 8B is a schematic diagram showing the device of FIG. 8A in a complementary plan view. [Figure 8C] FIG. 5 is a schematic diagram illustrating an exemplary version of the device of FIG. 4 in cross section. [Figure 8D] 8D is a schematic diagram showing the device of FIG. 8C in a complementary plan view. [Figure 8E] FIG. 5 is a schematic diagram illustrating an example of the device of FIG. 4 in cross section. [Figure 8F] FIG. 5 is a schematic diagram illustrating an example of the device of FIG. 4 in cross section. [Figure 8G] FIG. 5 is a schematic diagram illustrating an example of the device of FIG. 4 in cross section. [Figure 9A] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9B] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9C] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9D] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9E] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9F]5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9G] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9H] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 9I] 5A-5C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 4, according to various examples of the present disclosure. [Figure 10] 1 is a block diagram of an exemplary electroluminescent device from a cross section according to one example of the present disclosure. [Figure 11] FIG. 11 is a cross-sectional view of the device of FIG. [Figure 12] FIG. 11 is a schematic diagram illustrating, in plan view, an exemplary patterned electrode suitable for use in a version of the device of FIG. 10, according to one example of the present disclosure. [Figure 13] FIG. 13 is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 12 taken along line 13-13. [Figure 14A] 11A-11C are schematic diagrams illustrating, in plan view, several exemplary patterns of electrodes suitable for use in an exemplary version of the device of FIG. 10, according to one example of the present disclosure. [Figure 14B] 14B is a schematic diagram showing an exemplary cross-sectional view of the device of FIG. 14C at an intermediate stage, taken along line 14B-14B. [Figure 14C] FIG. 14C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 14A taken along line 14C-14C. [Figure 15] FIG. 11 is a schematic diagram showing a cross-sectional view of an exemplary version of the device of FIG. 10 with an exemplary patterned auxiliary electrode according to one example of the present disclosure. [Figure 16]1A and 1B are schematic diagrams illustrating, in plan view, example patterns of auxiliary electrodes covering at least one emissive region and at least one non-emissive region, according to an example of the present disclosure. [Figure 17A] 11 is a schematic diagram illustrating, in plan view, an example pattern of an example version of the device of FIG. 10 having multiple groups of diamond-configured emitting regions, according to an example of the present disclosure. [Figure 17B] FIG. 17B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 17A taken along line 17B-17B. [Figure 17C] FIG. 17C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 17A taken along line 17C-17C. [Figure 18] FIG. 12 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 11 with an additional example deposition step according to one example of the present disclosure. [Figure 19] FIG. 12 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 11 with an additional example deposition step according to one example of the present disclosure. [Figure 20] FIG. 12 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 11 with an additional example deposition step according to one example of the present disclosure. [Figure 21] FIG. 12 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 11 with an additional example deposition step according to one example of the present disclosure. [Figure 22A] FIG. 11 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 10 including at least one exemplary pixel region and at least one exemplary light-transmitting region having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 22B] FIG. 22B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 22A taken along line 22B-22B. [Figure 23A] FIG. 11 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 10 including at least one example pixel region and at least one example light-transmitting region, according to an example of the present disclosure. [Figure 23B]FIG. 23B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 23A taken along line 23-23. [Figure 23C] FIG. 23B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 23A taken along line 23-23. [Figure 24] 12A-12C are schematic diagrams that may illustrate exemplary stages in an exemplary process for fabricating an exemplary version of the device of FIG. 11 having subpixel regions with second electrodes of different thicknesses, according to an example of the present disclosure. [Figure 25] FIG. 11 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 10, in which the second electrode is coupled with an auxiliary electrode, according to an example of the present disclosure. [Figure 26] 11 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 10 having a divider and a shielding region, such as a recess, in a non-emitting region, according to an example of the present disclosure. [Figure 27A] 11A-11C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 10 having a divider and a shielding region, such as an opening, in a non-emitting region, according to various examples of the present disclosure. [Figure 27B] 11A-11C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 10 having a divider and a shielding region, such as an opening, in a non-emitting region, according to various examples of the present disclosure. [Figure 28A] 11 is a schematic diagram illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 10 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 28B] 11 is a schematic diagram illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 10 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 28C] 11 is a schematic diagram illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 10 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 29]1 is an exemplary energy profile illustrating the relative energy states of adatoms absorbed on a surface, according to an example of the present disclosure. [Figure 30] FIG. 1 is a schematic diagram illustrating the formation of membrane nuclei according to an example of the present disclosure.

[0009] In this disclosure, a reference number accompanied by at least one numerical value (including, but not limited to, a subscript) and / or lowercase alphabetic character (including, but not limited to, a lowercase character) may be considered to refer to a particular instance and / or a subset of instances of the element or feature described by the reference number. Reference to a reference number without reference to an accompanying value and / or character may generally refer to the element or feature described by the reference number and / or to the set of all instances described thereby, as the context indicates. Similarly, a reference number may have the letter "x" in place of a number. Reference to such a reference number may generally refer to the element or feature described by the reference number with the letter "x" replaced by a number, and / or to the set of all instances described thereby, as the context indicates.

[0010] In this disclosure, for purposes of explanation and not limitation, specific details are set forth, including but not limited to, particular architectures, interfaces, and / or techniques, to provide a thorough understanding of the present disclosure. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the present disclosure with unnecessary detail.

[0011] It will also be appreciated that the block diagrams reproduced herein may represent conceptual views of illustrative components embodying the principles of the present technology.

[0012] Accordingly, the components of the systems and methods have been represented, where appropriate, by conventional symbols in the drawings showing only those specific details relevant to understanding the examples of the present disclosure, so as not to obscure the present disclosure with details that will be readily apparent to those skilled in the art having the benefit of the description herein.

[0013] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0014] Any feature or action shown in dashed outline may, in some instances, be considered optional. Summary of the Invention

[0015] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0016] The present disclosure provides at least one Horizontal The present invention discloses a semiconductor device having multiple layers extending through an interface portion and a non-interface portion of a semiconductor device. A lower refractive index layer, which may include a low refractive index material having a first refractive index at a wavelength, is disposed on the first layer surface at least in the interface portion. A higher refractive index layer, which may include a high refractive index material having a second refractive index at a wavelength, is disposed on an exposed layer surface of the device to define a refractive index interface with the lower refractive index layer at the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on the second layer surface in the non-interface portion. The higher refractive index layer may cover the deposited material in the non-interface portion.

[0017] According to a broad aspect of the present disclosure, a method for manufacturing a gyro having a plurality of layers and at least one Horizontal Disclosed is a semiconductor device extending through an interface portion and a non-interface portion of a semiconductor device comprising: a lower(er) refractive index layer having a first refractive index at wavelengths within a first wavelength range disposed on a first layer surface of at least the interface portion; and a higher refractive index layer having a second refractive index greater than the first refractive index at wavelengths within a second wavelength range disposed on a second exposed layer surface of the device to define a refractive index interface with the lower(er) refractive index layer at the interface portion.

[0018] In some non-limiting examples, the first wavelength may be selected from at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and about 300-900 nm.

[0019] In some non-limiting examples, the first refractive index may vary across the first wavelength range by at least one of about 0.4, about 0.3, about 0.2, and about 0.1. In some non-limiting examples, the first refractive index may be at least one of about 1.7, about 1, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, and about 1.25. In some non-limiting examples, the first refractive index may be at least one of about 1.2-1.6, about 1.2-1.5, about 1.25-1.45, and about 1.25-1.4.

[0020] In some non-limiting examples, the lower(er) refractive index layer comprises a low refractive index material.

[0021] In some non-limiting examples, at least one of the low refractive index layer and the low refractive index material may exhibit an extinction coefficient within the first wavelength range that is less than or equal to at least one of about 0.10, about 0.08, about 0.05, about 0.03, and about 0.01.

[0022] In some non-limiting examples, at least one of the low(er) refractive index layer and the low refractive index material may be substantially transparent.

[0023] In some non-limiting examples, at least one of the low(er) refractive index layer and the low refractive index material may include at least one void therein.

[0024] In some non-limiting examples, the low refractive index material may include at least one of an organic compound and an organic-inorganic hybrid material.

[0025] In some non-limiting examples, the second wavelength range may be selected from at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and about 300-900 nm. In some non-limiting examples, the second wavelength range may be different from the first wavelength range.

[0026] In some non-limiting examples, the second refractive index can be at least one of about 1.7, about 1.8, and about 1.9.

[0027] In some non-limiting examples, the second refractive index may exceed the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.5.

[0028] In some non-limiting examples, a second maximum refractive index corresponding to a maximum value of the second refractive index measured within the second wavelength range may exceed a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range. In some non-limiting examples, the first maximum refractive index may correspond to a first wavelength within the first wavelength range that is different from a second wavelength within the second wavelength range to which the second maximum refractive index corresponds. In some non-limiting examples, the second maximum refractive index may exceed the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.7.

[0029] In some non-limiting examples, the higher refractive index layer may include a physical coating selected from at least one of a capping layer, a barrier coating, an encapsulation layer, a thin film encapsulation layer, and a polarizing layer. In some non-limiting examples, the higher refractive index layer may include an air gap.

[0030] In some non-limiting examples, the higher refractive index layer may include a high refractive index material.

[0031] In some non-limiting examples, at least one of the higher refractive index layer and the high refractive index material may exhibit an extinction coefficient within the second wavelength range that is less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, and about 0.01.

[0032] In some non-limiting examples, at least one of the higher refractive index layer and the high refractive index material may be substantially transparent.

[0033] In some non-limiting examples, the high refractive index material can include an organic compound.

[0034] In some non-limiting examples, the first layer surface may be that of an underlying layer having a third refractive index that exceeds the first refractive index at wavelengths within a third wavelength range.

[0035] In some non-limiting examples, the third wavelength range may be selected from at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and about 300-900 nm. In some non-limiting examples, the third wavelength range may be different from the first wavelength range.

[0036] In some non-limiting examples, the third refractive index can be at least one of about 1.7, about 1.8, and about 1.9.

[0037] In some non-limiting examples, the third refractive index may exceed the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.5.

[0038] In some non-limiting examples, a third maximum refractive index corresponding to a maximum value of the third refractive index measured within a third wavelength range may exceed a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range. In some non-limiting examples, the first maximum refractive index may correspond to a first wavelength within the first wavelength range that is different from a third wavelength within the third wavelength range to which the third maximum refractive index corresponds. In some non-limiting examples, the third maximum refractive index may exceed the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.7.

[0039] In some non-limiting examples, the underlayer may be a semiconductor layer of an optoelectronic device. In some non-limiting examples, the underlayer may be selected from an electron transport layer and an electron injection layer.

[0040] In some non-limiting examples, the average thickness of the lower refractive index layer may be equal to or less than the average thickness of the higher refractive index layer. In some non-limiting examples, the average thickness of the lower refractive index layer may be equal to or less than at least one of about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 10 nm, about 8 nm, and about 5 nm. In some non-limiting examples, the average thickness of the lower refractive index layer may be equal to or less than at least one of about 5 to 20 nm and about 5 to 15 nm.

[0041] In some non-limiting examples, the low refractive index material may exhibit a surface energy of about 25 dynes / cm or less and the first refractive index may be about 1.45 or less. In some non-limiting examples, the low refractive index material may exhibit a surface energy of about 20 dynes / cm or less and the first refractive index may be about 1.4 or less.

[0042] In some non-limiting examples, the device may further include a quantity of deposition material disposed on the second layer surface in the non-interface portion.

[0043] In some non-limiting examples, the lower refractive index layer may include a patterned coating. In some non-limiting examples, the initial sticking probability for forming a closed coating of deposition material on a surface of the patterned coating may be substantially less than the initial sticking probability for forming a closed coating of deposition material on a surface of the first layer, and the patterned coating may be substantially devoid of a closed coating of deposition material.

[0044] In some non-limiting examples, the interfacial moiety is Horizontal and the non-interfacial portion corresponds to a first portion of the deposited material forming a closed coating. Horizontal may correspond to the second part of

[0045] In some non-limiting examples, the amount of deposited material may include at least one particle structure comprising a particle material. In some non-limiting examples, the at least one particle structure may form a discontinuous layer between a lower refractive index layer and a higher refractive index layer. In some non-limiting examples, the deposited material may interfere with the definition of a refractive index interface in the non-interface portion. In some non-limiting examples, the higher refractive index layer may cover the deposited material in the non-interface portion.

[0046] In some non-limiting examples, the second layer surface and the first layer surface may be the same.

[0047] In some non-limiting examples, the lower(er) refractive index layer may extend into the non-interface portion, and the second layer surface may be an exposed layer surface of the lower(er) refractive index layer therein.

[0048] In some non-limiting examples, the device may be adapted to allow EM radiation to engage a surface of the device along an optical path in a first direction that is at an angle relative to a plane defined by the transverse axes of the device. In some non-limiting examples, the EM radiation may be emitted by the device, and the first direction may be a direction in which the EM radiation is extracted from the device. In some non-limiting examples, the EM radiation may be incident on an external surface of the device and at least partially transmitted through the external surface, and the first direction may be a direction in which the EM radiation is incident on the device.

[0049] In some non-limiting examples, the interface portion may comprise a first emission region for emitting a first EM signal along an optical path in a first direction along which EM radiation is extracted from the device and that is at an angle to a plane defined by the plurality of transverse axes of the device.

[0050] In some non-limiting examples, the device can further include a substrate and at least one semiconductor layer disposed thereon, the first emissive region including a first electrode and a second electrode, the first electrode disposed between the substrate and the at least one semiconductor layer, the at least one semiconductor layer disposed between the first electrode and the second electrode, and the lower refractive index layer disposed between the second electrode and the higher refractive index layer.

[0051] In some non-limiting examples, the device may further comprise a second emission region in the non-interface portion for emitting a second EM signal along an optical path further comprising a third electrode and a fourth electrode, wherein the third electrode is disposed between the substrate and the at least one semiconductor layer, the at least one semiconductor layer is disposed between the third electrode and the fourth electrode, the non-interface portion is substantially devoid of a lower refractive index layer, and the fourth electrode is disposed between the third electrode and the higher refractive index layer. DETAILED DESCRIPTION OF THE INVENTION

[0052] stacked devices FIELD OF THE DISCLOSURE The present disclosure relates generally to stacked semiconductor devices, and more particularly to optoelectronic devices, which may generally include any device that converts electrical signals into photons and vice versa.

[0053] Those skilled in the art will understand that while the present disclosure is directed to optoelectronic devices, the principles may be applicable to any panel having multiple layers, including, but not limited to, at least one layer of conductive deposited material 731 (FIG. 7), including thin films, and in some non-limiting examples, electromagnetic (EM) signals may pass through, in whole or in part, at an angle relative to the plane of at least one of the layers.

[0054] 1, there can be seen a cross-sectional view of an exemplary laminated device 100. In some non-limiting examples, as shown in more detail in FIG. 10, the device 100 can comprise multiple layers deposited on a substrate 10.

[0055] A horizontal axis identified as the X-axis may be shown along with a longitudinal axis identified as the Z-axis. A second horizontal axis, identified as the Y-axis, may be shown as substantially transverse to both the X-axis and the Z-axis. Horizontal may be defined. The longitudinal axis may define a transverse cross-section of device 100. Some figures herein may be shown in plan view. In such plan view, a pair of transverse axes is shown, identified as the X-axis and Y-axis, respectively, which, in some non-limiting examples, may be substantially intersecting each other. At least one of these horizontal axes is the Horizontal can be defined.

[0056] The layers of device 100 are substantially parallel to the plane defined by the transverse axis. Horizontal 1 may be an abstraction for purposes of illustration, in some non-limiting examples. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions across the lateral extent of device 100, which in some non-limiting examples includes the substantial absence of layers and / or layers separated by non-planar transition regions (including lateral gaps and even discontinuities).

[0057] Thus, for illustrative purposes, device 100 may be shown in cross-section as a substantially layered structure of substantially parallel planar layers, although such a display panel may locally exhibit a variety of topographies for defining features, each of which may substantially exhibit the layered profile described in cross-section.

[0058] In some non-limiting examples, device 100 comprises a first layer 110 and a second layer 120, where first layer 110 is disposed on an exposed layer surface 11 of a lower layer 130, including but not limited to a substrate 10 of device 100, and second layer 120 is disposed on the exposed layer surface 11 of first layer 110 such that first layer 110 is located between lower layer 130 and second layer 120.

[0059] The exposed layer surface 11 of the first layer 110 on which the second layer 120 is disposed defines a refractive index interface 150 between the first layer 110 and the second layer 120 .

[0060] In some non-limiting examples, the first layer 110 includes a medium with a low refractive index (low refractive index material), such that the first layer 110 includes a lower(er) refractive index layer 110 .

[0061] In some non-limiting examples, the low(er) refractive index layer 110 and / or the low refractive index material may exhibit a first refractive index when deposited as a form of film and / or coating and under circumstances similar to the deposition of the low(er) refractive index layer 110 in the device 100.

[0062] In some non-limiting examples, the first refractive index can be determined and / or measured in a first wavelength range and / or at least one first wavelength thereof. In some non-limiting examples, such first wavelength range can be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or about 300-900 nm.

[0063] In some non-limiting examples, the first maximum refractive index may correspond to a maximum value of the first refractive index measured within such first wavelength range.

[0064] In some non-limiting examples, the first refractive index can vary by no more than at least one of about 0.4, about 0.3, about 0.2, or 0.1 over such first wavelength range.

[0065] In some non-limiting examples, the first refractive index may be less than or equal to at least one of about 1.7, about 1.6, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, or about 1.25 in such first wavelength range.

[0066] In some non-limiting examples, the first refractive index may be at least one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, or about 1.25 to 1.4 in such first wavelength range.

[0067] In some non-limiting examples, the low(er) refractive index layer 110 and / or low refractive index material, when deposited as a form of film and / or coating, and under conditions similar to the deposition of the low(er) refractive index layer 110 in device 100, may exhibit a first extinction coefficient of less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, or about 0.01 in such first wavelength range.

[0068] In some non-limiting examples, the low(er) refractive index layer 110 and / or the low refractive index material may be substantially transparent when deposited as a form of film and / or coating and under circumstances similar to the deposition of the low(er) refractive index layer 110 in the device 100.

[0069] In some non-limiting examples, the lower(er) refractive index layer 110 and / or low refractive index material may, in some non-limiting examples, comprise a substantially porous coating and / or medium having at least one void formed therein when deposited as a form of film and / or coating and under circumstances similar to the deposition of the lower(er) refractive index layer 110 in device 100. Without wishing to be bound by any particular theory, it may be hypothesized that the presence of such pores and / or voids may contribute to a reduction in the first refractive index of the lower(er) refractive index layer 110 compared to a layer comprised of a similar medium but substantially devoid of such pores and / or voids. In some non-limiting examples, such a substantially porous layer and / or medium can be considered to be at least one of: a microporous layer and / or medium that can include at least one pore and / or void having a diameter of 2 nm or less; a mesoporous layer and / or medium that can include at least one pore and / or void having a diameter of about 2-50 nm; and a microporous layer and / or medium that can include at least one pore and / or void having a diameter of at least about 50 nm, by way of non-limiting example.

[0070] In some non-limiting examples, the low refractive index material may include and / or be formed by at least one of an organic compound and an organic-inorganic hybrid material.

[0071] In some non-limiting examples, the second layer 120 includes a medium having a high refractive index (high refractive index material), such that the second layer 120 includes a higher refractive index layer 120 .

[0072] In some non-limiting examples, the higher refractive index layer 120 and / or the high refractive index material may exhibit a second refractive index when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index layer 120 in the device 100.

[0073] In some non-limiting examples, the second refractive index can be determined and / or measured in a second wavelength range and / or at least one second wavelength (second wavelength (range)).

[0074] In some non-limiting examples, such second wavelength range may be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or about 300-900 nm.

[0075] In some non-limiting examples, the second maximum refractive index may correspond to a maximum value of the second refractive index measured within such second wavelength range.

[0076] In some non-limiting examples, the first maximum refractive index may correspond to a wavelength within the first wavelength range that is different from the wavelength within the second wavelength range to which the second maximum refractive index corresponds.

[0077] In some non-limiting examples, the second refractive index can be at least one of about 1.7, about 1.8, or about 1.9.

[0078] The second refractive index at the second wavelength (range) exceeds the first refractive index at the first wavelength (range).

[0079] In the present disclosure, even if the first refractive index of the medium in which the low(er) refractive index layer 110 may be formed is not necessarily considered low compared to the refractive index of other materials that may be used in typical optoelectronic devices, the medium in which the low(er) refractive index layer 110 may be formed may be considered a low refractive index material if it has a first refractive index that is exceeded by the second refractive index of the medium (high refractive index material) in which the higher refractive index layer 120 may be formed.

[0080] In some non-limiting examples, the second wavelength (range) may be the same as and / or different from the first wavelength (range).

[0081] In some non-limiting examples, the second refractive index at the second wavelength (range) may be greater than the first refractive index at the first wavelength (range) by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, or about 1.5.

[0082] In some non-limiting examples, the second maximum refractive index may exceed the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, or about 1.7.

[0083] In some non-limiting examples, the higher refractive index layer 120 and / or the high refractive index material, when deposited as a form of film and / or coating, and under conditions similar to the deposition of the higher refractive index layer 120 in the device 100, may exhibit a second extinction coefficient at such second wavelength (range) of less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, or about 0.01.

[0084] Although not shown, in some non-limiting examples, the exposed layer surface 11 of the lower(er) refractive index layer 110 may have an air gap at the refractive index interface 150, whether during manufacturing, after manufacturing, and / or during operation, and the lower(er) refractive index layer 110 has a first refractive index that may be lower than the refractive index of air (which may typically be considered to have a refractive index slightly above 1.0), such that the air gap may be considered to be a second layer 120, in fact a higher refractive index layer 120.

[0085] In some non-limiting examples, the second layer 120 is a physical coating, including, but not limited to, a capping layer (CPL) of the device 100 (or other barrier coating or encapsulation layer 1450 (FIG. 14C) such as a TFE layer and / or a polarizing layer).

[0086] In some non-limiting examples, the higher refractive index layer 120 and / or the high refractive index material may be substantially transparent when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index layer 120 in the device 100.

[0087] In some non-limiting examples, the high refractive index material may include and / or be formed by an organic compound.

[0088] In some non-limiting examples, device 100 is configured to substantially allow EM radiation to engage a surface of device 100 along an optical path in at least a first direction indicated by arrow OC at an angle relative to the plane of underlying layer 130 defined by the plurality of horizontal axes. The optical path corresponds to a (first) direction that is at least one of a direction from which EM radiation emitted by device 100 may be extracted and a direction in which EM radiation is incident on and at least partially propagates through exposed layer surface 11 of device 100, including, but not limited to, when EM radiation is incident on an exposed layer surface of substrate 10 opposite the surface on which the various layers and / or coatings are deposited and is at least partially transmitted through substrate 10 and the various layers and / or coatings.

[0089] Those skilled in the art will understand that there may be scenarios in which EM radiation is emitted by device 100 and, at the same time, EM radiation is incident on and at least partially transmitted through exposed layer surface 11 of device 100. In such scenarios, the direction of the optical path is determined by the direction in which the EM radiation emitted by device 100 can be extracted, unless the context indicates otherwise. In some non-limiting examples, EM radiation that is transmitted entirely through device 100 may propagate in the same or similar direction. Nevertheless, nothing in this disclosure should be construed as limiting the propagation of EM radiation entirely through device 100 to a direction that is the same as or similar to the direction of propagation of EM radiation emitted by device 100.

[0090] In the present disclosure, the propagation of transient EM radiation in a given direction, including but not limited to that shown by arrow OC, gives rise to directional rules in which the lower refractive index layer 110 may be said to be "anterior," "ahead of," and / or "before" the higher refractive index layer 120 in the optical path (in the (first) direction of propagation of the EM radiation).

[0091] In some non-limiting examples, device 100 may be a top-emitting optoelectronic device in which EM radiation (including, but not limited to, in the form of light and / or photons) is emitted by device 100 in at least a first direction.

[0092] In some non-limiting examples, device 100 can include at least one optically transparent region in which EM radiation incident on an exposed layer surface 11 of substrate 10 opposite the layer surface on which the various layers and / or coatings are deposited can be transmitted through substrate 10 and the various layers and / or coatings in at least a first direction.

[0093] Those skilled in the art will appreciate that it may be well known to use CPLs alone to enhance the outcoupling of light emitted by optoelectronic devices so as to improve the external quantum efficiency (EQE).

[0094] Those skilled in the art can reasonably expect that the inclusion of a lower(er) refractive index layer 110 in front of a higher refractive index layer 120 in the optical path may, in some non-limiting examples, create a refractive index interface 150 between such lower(er) refractive index layer 110 and the higher refractive index layer 120, which may reflect EM radiation therefrom back towards the underlying layer 130 and reduce the proportion of EM radiation that can be extracted from such a device 100.

[0095] However, somewhat surprisingly, placing a low(er) refractive index layer 110 having a first refractive index lower than the second refractive index of the higher refractive index layer 120 in front of such higher refractive index layer 120 in the optical path, such that it is located between the lower layer 130 and the higher refractive index layer 120, may, in some non-limiting examples, exhibit enhanced outcoupling of EM radiation compared to a comparable device that does not have such a low(er) refractive index layer 110 between the lower layer 130 and the higher refractive index layer 120, and therefore, in at least some non-limiting examples, may increase the proportion of EM radiation that can be extracted from the device 100.

[0096] In some non-limiting examples, the underlayer 130 comprises a medium having a high refractive index (high refractive index underlayer material), such that the underlayer 130 comprises a higher refractive index underlayer 130 .

[0097] In some non-limiting examples, the higher refractive index lower layer 130 and / or the high refractive index lower material may exhibit a third refractive index when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index lower layer 130 in the device 100.

[0098] In some non-limiting examples, the third refractive index can be determined and / or measured in a third wavelength range and / or at least one third wavelength (third wavelength (range)).

[0099] In some non-limiting examples, such a third wavelength range may be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or between about 300-900 nm.

[0100] In some non-limiting examples, the third maximum refractive index may correspond to a maximum value of the third refractive index measured within such third wavelength range.

[0101] In some non-limiting examples, the first maximum refractive index may correspond to a wavelength within the first wavelength range that is different from the wavelength within the third wavelength range to which the third maximum refractive index corresponds.

[0102] In some non-limiting examples, the third refractive index may be at least one of about 1.7, about 1.8, or about 1.9.

[0103] In some non-limiting examples, the third refractive index at the third wavelength (range) may exceed the first refractive index at the first wavelength (range), such that in some non-limiting examples, the lower refractive index layer 110 may be located between two layers comprising higher refractive index materials, i.e., the higher refractive index sublayer 130 and the higher refractive index layer 120.

[0104] As a non-limiting example, the bottom layer 130 may include one of at least one semiconductor layer 1030 ( FIG. 10 ) of an organic stack of an optoelectronic device, including, but not limited to, an organic light emitting diode (OLED). In some non-limiting examples, the bottom layer 130 may comprise one of the top semiconductor layers 1030, including, but not limited to, an electron transport layer (ETL) 1037 and / or an electron injection layer (EIL) 1039. Typically, the ETL 1037 and / or EIL 1039 materials tend to have a relatively high refractive index.

[0105] Without being bound by any particular theory, it may be hypothesized that the placement of a thin low(er) index layer 110 comprising a low index material having a first index lower than the (second) index of the higher index layer 120 and / or the third index of the underlayer 130 may improve the transmission of EM radiation through the device 100 compared to a device in which such low(er) index layer 110 is not present.

[0106] In some non-limiting examples, the average layer thickness of the lower(er) refractive index layers 110 may be less than or equal to the average layer thickness of the higher refractive index layers 120 .

[0107] In some non-limiting examples, the average layer thickness of the(r) lower refractive index layer 110 may be less than or equal to at least one of about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 10 nm, about 8 nm, or about 5 nm.

[0108] Without wishing to be bound by any particular theory, it may be hypothesized that reducing the average layer thickness of the low(er) refractive index layer 110, including but not limited to at least one of about 5-20 nm or about 5-15 nm, may, in some non-limiting examples, increase the rate of extraction of EM radiation while mitigating the possibility that the presence of such low(er) refractive index layer 110 in the device 100 may adversely affect the performance of the device 100 and / or its manufacturing process.

[0109] Without wishing to be bound by any particular theory, it has been somewhat surprisingly discovered that materials that exhibit relatively low surface tension, particularly materials that contain and / or are formed from organic materials, can, in some non-limiting examples, exhibit relatively low refractive indices. This can be seen in the table below, which shows the surface tensions and refractive indices obtained for various example materials.

[0110] [Table 1]

[0111] FIG. 2 is a plot of refractive index as a function of surface tension for the example materials listed in Table 1 above.

[0112] Based on the above, it may be assumed that a material exhibiting a relatively low surface energy may be suitable to act as a low refractive index material. In some non-limiting examples, the low(er) refractive index layer 110 may include a low refractive index material exhibiting a surface energy of about 25 dynes / cm or less and a first refractive index that may be about 1.45 or less.

[0113] In some non-limiting examples, the low(er) refractive index layer 110 may include a low refractive index material that exhibits a surface energy of about 20 dynes / cm or less and a first refractive index of about 1.4 or less.

[0114] 1, device 100 may comprise a substrate 10 onto which various coatings and / or layers may be deposited. At some point, a lower(er) refractive index layer 110 may be deposited on the exposed layer surface 11 of the underlying layer 130, in some non-limiting examples. Horizontal A higher refractive index layer 120 may be deposited on the exposed layer surface 11 of device 100, including over the lower refractive index layer 110, to define a refractive index interface 150 therewith.

[0115] 3A , a cross-sectional view of version 300 of device 100 according to some non-limiting examples is shown, with a quantity of deposition material 731 ( FIG. 7 ) deposited on device 300. In some non-limiting examples, as shown, deposition material 731 is disposed on exposed layer surface 11 of lower(er) refractive index layer 110. In some non-limiting examples, deposition material 731 is formed as a discontinuous layer 340 that may include a plurality of grain structures 341 comprising a grain material. In some non-limiting examples, but not limited to, when the lower(er) refractive index layer 110 functions as a patterned coating 610 (FIG. 6) deposited on the first portion 601 (FIG. 6) to selectively deposit a deposition layer 430 (FIG. 4A) on the second portion 602 (FIG. 6) in an open mask and / or mask-free deposition process as described herein, such particle structure 341 may be formed by impinging a vapor monomer or vapor flux 732 (FIG. 7) of the deposition material 731 on the exposed layer surface 11 of the lower(er) refractive index layer 110, which may condense to form at least one particle structure 341. If left unhindered, further exposure of the discontinuous layer 340 of the at least one particle structure 341 to the vapor monomer 732 of the deposition material 731 could potentially result in the eventual formation of a substantially closed coating 440 of the deposition material 731 (FIG. 4A), but such growth may continue to be inhibited due to at least one property and / or characteristic of the(r) lower refractive index layer 110, including, but not limited to, a low initial adhesion probability for the deposition of the deposition material 731.

[0116] In some non-limiting examples, the higher refractive index layer 120 may be disposed on the portion of the exposed layer surface 11 of the lower refractive index layer 110 that is not covered by the deposited material 731 to define the refractive index layer 150.

[0117] In some non-limiting examples, the higher refractive index layer 120 may also be disposed on and coat the deposition material 731. Even so, one skilled in the art will recognize that in such a scenario, the presence of a certain amount of deposition material 731, including but not limited to at least one grain structure 341, between the lower(er) refractive index layer 110 and the higher refractive index layer 120 may (at least locally) disrupt the refractive index interface 150 between the lower(er) refractive index layer 110 and the higher refractive index layer 120, and may result in the formation of a gap where such deposition material 731 is located. Horizontal Those skilled in the art will understand that, in the present invention, it may be said that such refractive index interface 150 is not formed and / or not defined.

[0118] Thus, in devices 300 where there is a refractive index interface 150 between the lower(er) refractive index layer 110 and the higher refractive index layer 120 Horizontal may be denoted as interface portions 401, while portions where no such refractive index interface 150 exists due to the (intervening) presence of deposited material 731, either as a localized disruption in the form of at least one grain structure 341 or as a deposited layer 430 forming a closed coating 440 of deposited material 731, may be denoted as non-interface portions 402.

[0119] Those skilled in the art will appreciate that materials with low surface energy may typically exhibit low intermolecular forces, and such materials may readily crystallize and / or undergo other phase transformations at lower temperatures compared to materials with high intermolecular forces. In at least some applications, materials that readily crystallize and / or undergo other phase transformations at relatively low temperatures may, in some non-limiting examples, degrade at least one of the long-term performance, stability, reliability, and / or lifetime of devices incorporating such materials.

[0120] In some non-limiting examples, including but not limited to when the higher refractive index layer 120 includes an air gap, the presence of a certain amount of deposited material 731, including but not limited to, in the form of a discontinuous layer 340, including but not limited to, at least one grain structure 341, may reduce and / or mitigate crystallization of the thin film layer, including but not limited to, the lower refractive index layer 110 in the surrounding interface portion 401 where such grain structure 341 is not present, and / or coatings disposed adjacent thereto on the longitudinal surface, thereby stabilizing the properties of the thin film layer and / or coatings disposed adjacent thereto, including but not limited to, reduced scattering.

[0121] FIG. 3B shows device 300 in a partially cutaway plan view.

[0122] As discussed in more detail herein under the heading "Particles," it has been previously reported that, in some non-limiting examples, certain metal nanoparticles (NPs) can absorb and / or scatter EM radiation, including but not limited to photons, in wavelength ranges of the EM spectrum, including the visible light spectrum or subranges thereof. Such optical properties can affect at least one of the absorption spectrum, refractive index, and / or extinction spectrum of EM radiation, but are not limited to these. In some non-limiting examples, the effect of such metal NPs on such optical properties can be tuned to some extent by varying certain physical properties of the NPs, including, but not limited to, their characteristic size, size distribution, shape, surface coverage, composition, deposition density, degree of dispersion, size, degree of aggregation, and / or properties of the medium in the vicinity of the NPs. As a non-limiting example, it has been reported that placing certain metal NPs in proximity to a medium with a relatively low refractive index can cause a blue-shift in the NPs' absorption spectrum.

[0123] Without wishing to be bound by any particular theory, it may be assumed that the discontinuous layer 340 of such particle structures 341 in the non-interface portion 402 may resemble such metal NPs, even if they do not actually form such metal NPs, and such optical properties may therefore be controllably tuned, including but not limited to, by introducing such discontinuous layer 340 of at least one particle structure 341 onto the exposed layer surface 11 of the(r) lower refractive index layer 110, as shown, so that they do not substantially overlap with the wavelength range of EM radiation emitted by and / or transmitted through the device 300.

[0124] In some non-limiting examples, the peak absorption wavelength of the discontinuous layer 340 may be less than or equal to the peak wavelength of the EM radiation being emitted by and / or transmitted through the device 300. In some non-limiting examples, the discontinuous layer 340 may exhibit peak absorption at a wavelength less than or equal to at least one of about 470 nm, about 460 nm, about 455 nm, about 450 nm, about 445 nm, about 440 nm, about 430 nm, about 420 nm, or about 400 nm.

[0125] In some non-limiting examples, the at least one grain structure 340 can have a characteristic size that is about 200 nm or less. In some non-limiting examples, the at least one grain structure 340 can have at least one characteristic size of about 1-200 nm, about 1-160 nm, about 1-100 nm, about 1-50 nm, or about 1-30 nm.

[0126] In some non-limiting examples, the higher refractive index layer 120 can substantially cover the exposed layer surface 11 of the deposited material 731 in the non-interface portion 402 and also cover a portion of the exposed layer surface 11 of the lower refractive index layer 110 in the interface portion 401, including, but not limited to, locations not covered by gaps between at least one grain structure 341 of the deposited material 731 that define the non-interface portion 402 of the device 300.

[0127] Referring now to FIG. 4A, an exemplary version 400 of device 100 a 4 shows a simplified block diagram of a cross section of device 400. In some non-limiting examples, device 400 a of the exposed layer surface 11 Horizontal may include an interface portion 401 and a non-interface portion 402. In some non-limiting examples, the interface portion 401 may include a portion of the exposed layer surface 11 of the underlying layer 130 of the device 300 that is located beyond the non-interface portion 402.

[0128] A lower(er) refractive index layer 110 may be deposited on the exposed layer surface 11 of the underlayer 130 at the interface portion 401 .

[0129] In some non-limiting examples, in the interface portion 401, the low(er) refractive index layer 110 comprising a low refractive index material may be selectively deposited as a closed coating 440 on the exposed layer surface 11 of the underlying layer 130, including but not limited to the substrate 10 of the device 400.

[0130] A quantity of deposition material 731 may be deposited on the exposed layer surface 11 of the underlayer 130, including but not limited to the substrate 10 of the device 400, only in the non-interface portion 402, in some non-limiting examples as a closed coating 440 of the deposition layer 430.

[0131] In some non-limiting examples, the lower(er) refractive index layer 110 may be deposited on at least the interface portion 401 prior to deposition of the deposition material 731 in the non-interface portion 402. Indeed, in some non-limiting examples, the lower(er) refractive index layer 110 may also be deposited in the second portion 602, such that the lower(er) refractive index layer 110 may be an underlying layer 130 in the non-interface portion 402 onto which the deposition material 731 may be deposited.

[0132] In some non-limiting examples, the lower(er) refractive index layer 110 may be, act as, and / or include a patterned coating 610 including a patterned material 611 ( FIG. 6 ) for substantially inhibiting deposition of a deposition material 731 onto the patterned coating, as described herein. In some non-limiting examples, in the non-interface portion 402, a deposition layer 430 including a quantity of deposition material 731 may be disposed as a closed coating 440 on an exposed layer surface 11 of an underlayer 130, including, but not limited to, a substrate 10 (in some non-limiting examples, in an open-mask and / or mask-free deposition process by using the lower(er) refractive index layer 110 as the patterned coating 610). In some non-limiting examples, the exposed layer surface 11 of such an underlayer 130 may be substantially devoid of a closed coating 440 of low refractive index material.

[0133] In some non-limiting examples, it may be assumed that materials that exhibit relatively low surface energy may be suitable to serve as such patterning material 611 .

[0134] In some non-limiting examples, the higher refractive index layer 120 may be deposited on the exposed layer surface 11 of the device 400 to form a refractive index interface 150 with the(r) lower refractive index layer 110 in the interface portion 401, but may also be deposited on the exposed layer surface 11 of the deposition material 731 in the non-interface portion 402, deposited as a closed coating of the deposition layer 430 and / or as a discontinuous layer 340 of at least one grain structure 341, but is not limited to these.

[0135] 4B , the higher refractive index layer 120 may be disposed substantially only in the interfacial portion 401 on the exposed layer surface 11 of the lower refractive index layer 110. In some non-limiting examples, particularly when the deposited material 731 is formed as a deposited layer 731 in a closed coating 440, another CPL 420 may be disposed to coat the exposed layer surface 11 of the deposited material 430 in the non-interfacial portion 402. In some non-limiting examples, such other CPL 420 may exhibit at least one property different from the property of the higher refractive index layer 120, including, but not limited to, the refractive index exhibited thereby.

[0136] A series of samples were fabricated by vacuum depositing approximately 50 nm thick layers of various example materials onto respective glass substrates. The refractive index and extinction coefficient of the coating formed by each example material were determined using an ellipsometer. The refractive index and extinction coefficient of each example material, determined at a wavelength of 578 nm, are summarized in Table 2 below.

[0137] [Table 2]

[0138] In Table 2, Comparative Material A is included as a comparative example of an organic material that can be used as a high refractive index material.

[0139] Example Material A and Example Material B are non-limiting examples of low refractive index media that each exhibit the optical properties of the low(er) refractive index layer 110, including, but not limited to, a refractive index of about 1.3 or less and substantially less than the refractive index of a high refractive index material such as Comparative Example A, and an extinction coefficient of about 0 in a wavelength range within the visible light spectrum.

[0140] Liq is included as a comparative example of organic materials used in some known OLED structures, which exhibit a relatively high refractive index relative to that of Example Material A and Example Material B.

[0141] Example 2 A series of samples were fabricated by vacuum depositing at least one semiconductor layer 1030 as an exemplary stack on a glass substrate, and then vacuum depositing at least one of a lower refractive index layer 110 and a higher refractive index layer 120 thereon.

[0142] The exemplary stack in each sample was formed by sequentially depositing various semiconductor layers 1030 typically present in optoelectronic devices, including, but not limited to, OLEDs. Specifically, in Example 2, the stack in each sample was formed with HIL / HTL / EBL / HBL / ETL / EIL layers to mimic the non-limiting example front plane layer 1010 of OLED device 1000.

[0143] Table 3 summarizes the layers and / or coatings deposited on the exemplary stack and / or their associated average layer thicknesses on the longitudinal surfaces for each sample.

[0144] [Table 3]

[0145] As shown in Table 3, Example Samples 1, 2, and 3 were fabricated to have both a lower(er) refractive index layer 110 and a higher refractive index layer 120, although the average layer thicknesses varied, while Comparative Samples 1 and 2 were fabricated to have an average layer thickness of the higher refractive index layer 120 comparable to Example Samples 1 and 3, respectively. However, in both Comparative Samples, the lower(er) refractive index layer 110 was omitted.

[0146] In each sample, the lower refractive index layer 110 was formed from Example Material A and the higher refractive index layer 120 was formed from Comparative Material A.

[0147] 5 is a plot of transmittance as a function of wavelength for data measured using the example samples of Example 2. The transmittance of each sample was determined by measuring the percentage of EM radiation that was completely transmitted through each sample when light from an external light source was directed at the sample.

[0148] 5, it has been somewhat surprisingly found that the measured transmittance for Comparative Sample 1 is generally lower across the visible light spectrum compared to the measured transmittance 502 for Example Sample 1. As a non-limiting example, the measured transmittance 502 for Example Sample 1 can be substantially higher than the measured transmittance 501 for Comparative Sample 1 at wavelengths between about 450 and 600 nm.

[0149] It was also found, somewhat surprisingly, that even though the average layer thickness of the lower(er) refractive index layer 110 of Example Sample 2 is substantially thicker than the average layer thickness of Example Sample 1, the transmittance 503 measured for Example Sample 2 can exceed the transmittance 502 measured for Example Sample 1 at least at some wavelengths.

[0150] Furthermore, by comparing the transmittance 504 measured for Comparative Sample 2 with the transmittance 505 measured for Example Sample 3, it can be observed that the presence of the low(er) refractive index layer 110 results in a transmittance across the visible light spectrum that is at least comparable to the transmittance of the comparative sample lacking such low(er) refractive index layer 110. As a non-limiting example, the transmittance 505 measured for Example Sample 3 can be substantially higher than the transmittance measured for Comparative Sample 2 at wavelengths between about 450 and 600 nm.

[0151] Patterned Coating In some non-limiting examples, the patterned coating 610, including but not limited to the lower(er) refractive index layer 110, Horizontalmay be deposited on first portion 601 of patterned material 611. In some non-limiting examples, patterned coating 610 may include closed coating 440 of patterned material 611.

[0152] The patterned coating 610 can provide the exposed layer surface 11 with a relatively low initial sticking probability for deposition of the deposition material 731 (in some non-limiting examples, under conditions specified in the dual QCM technique described by Walker et al.), which in some non-limiting examples may be substantially equal to or less than the initial sticking probability for deposition of the deposition material 731 on the exposed layer surface 11 of the underlying layer 130 of the device 400 on which the patterned coating 610 is deposited.

[0153] Due to the low initial adhesion probability of the patterned coating 610 and / or patterned material 611 relative to the deposition of the deposition material 731, in some non-limiting examples, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, the first portion 601 including the patterned coating 610 may be substantially devoid of a closed coating 440 of the deposition material 731.

[0154] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, can have an initial sticking probability less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001, relative to the deposition of the deposition material 731, in some non-limiting examples.

[0155] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, may have an initial sticking probability that is less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001 relative to the deposition of silver (Ag) and / or magnesium (Mg).

[0156] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, may have a molecular weight of about 0.15 to 0.0001, about 0.1 to 0.0003, about 0.0004, about 0.0005, about 0.0006, about 0.0007, about 0.0008, about 0.0009 ... 0.08~0.0005, approx. 0.08~0.0008, approx. 0.05~0.001, approx. 0.03~0.0001, approx. 0.03~0.0003, approx. 0.03~0.0005, approx. 0.03~0.0008, approx. 0.03~0.001, approx. 0.03~0.005, approx. 0.03~0.008, approx. 0.03~0.01, approx. 0.02~0.0001, approx. 0.02~0.0003, approx. 0.0 2 to 0.0005, approximately 0.02 to 0.0008, approximately 0.02 to 0.001, approximately 0.02 to 0.005, approximately 0.02 to 0.008, approximately 0.02 to 0.01, approximately 0.01 to 0.0001, approximately 0.01 to 0.0003, approximately 0.01 to 0.0005, approximately 0.01 to 0.0008, approximately 0.01 to 0.001, approximately 0.01 to 0.005, approximately 0.01 to 0.008, approximately 0.008 to 0. The initial sticking probability may be at least one of about 0.0001, about 0.008 to 0.0003, about 0.008 to 0.0005, about 0.008 to 0.0008, about 0.008 to 0.001, about 0.008 to 0.005, about 0.005 to 0.0001, about 0.005 to 0.0003, about 0.005 to 0.0005, about 0.005 to 0.0008, or about 0.005 to 0.001.

[0157] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, can have an initial sticking probability that is less than or equal to a threshold value for deposition of the plurality of deposition materials 731. In some non-limiting examples, such a threshold value can be at least one of about 0.3, about 0.2, about 0.18, about 0.15, about 0.13, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, or about 0.001.

[0158] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, in some non-limiting examples, can have an initial sticking probability that is below such a threshold for deposition of a plurality of deposition materials 731 selected from at least one of Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn) under circumstances similar to the deposition of the patterned coating 610 in device 400. In some further non-limiting examples, the patterned coating 610 can exhibit an initial sticking probability that is below such a threshold for deposition of a plurality of deposition materials 731 selected from at least one of Ag, Mg, and Yb.

[0159] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 610 in the device 400, may exhibit an initial sticking probability for deposition of the first deposition material 731 that is equal to or less than a first threshold, and an initial sticking probability for deposition of the second deposition material 731 that is equal to or less than a second threshold. In some non-limiting examples, the first deposition material 731 may be Ag and the second deposition material 731 may be Mg. In some other non-limiting examples, the first deposition material 731 may be Ag and the second deposition material 731 may be Yb. In some other non-limiting examples, the first deposition material 731 may be Yb and the second deposition material 731 may be Mg. In some non-limiting examples, the first deposition material 731 may be Ag and the second deposition material 731 may be Mg. In some non-limiting examples, the first deposition material 731 may be Yb and the second deposition material 731 may be Mg. In some non-limiting examples, the first threshold may be greater than the second threshold.

[0160] In some non-limiting examples, the patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, and after being exposed to a vapor flux 732 of the deposition material 731, including but not limited to Ag, under conditions similar to the deposition of the patterned coating 610 in the device 400, may have a transmittance to EM radiation of at least a threshold transmittance value.

[0161] In some non-limiting examples, such transmittance may be measured after exposing the patterned coating 610 and / or exposed layer surface 11 of the patterned material 611 formed as a thin film to a vapor flux 732 of a deposition material 731, including but not limited to Ag, under typical conditions that may be used to deposit an electrode of an optoelectronic device, which may be the cathode of an OLED device, as a non-limiting example.

[0162] In some non-limiting examples, the conditions for the exposed layer surface 11 to receive a vapor flux 732 of deposition material 731, including but not limited to Ag, may be as follows: (i) about 10- 4Torr or 10 -5 a vacuum pressure of Torr, (ii) a vapor flux 732 of the deposition material 731, including but not limited to Ag, substantially corresponds to a reference deposition rate of about 1 angstrom (Å) / second, which may be monitored and / or measured using a QCM, as a non-limiting example, and (iii) the exposed layer surface 11 is subjected to the vapor flux 732 of the deposition material 731, including but not limited to Ag, until a reference average layer thickness of about 15 nm is reached, at which point the exposed layer surface 11 is no longer subjected to the vapor flux 732 of the deposition material 731, including but not limited to Ag.

[0163] In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 732 of the deposition material 731, including but not limited to Ag, may be substantially at room temperature (e.g., about 25° C.). In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 732 of the deposition material 731, including but not limited to Ag, may be positioned about 65 cm away from an evaporation source that evaporates the deposition material 731, including but not limited to Ag.

[0164] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength within the visible light spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 460 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least one of about 60%, about 65%, about 70%, about 75%, about 80%, about 85%, or about 90%.

[0165] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the patterned coating 610 and / or patterned material 611 upon deposition of the deposition material 731 and, in some non-limiting examples, the average layer thickness of the deposition material 731 thereon when deposited as a film and / or some form of coating and under circumstances similar to the deposition of the patterned coating 610 in the device 400.

[0166] Those skilled in the art will appreciate that a high transmittance may generally indicate the absence of a closed coating 440 of deposited material 731, which may be Ag as a non-limiting example. On the other hand, a low transmittance may generally indicate the presence of a closed coating 440 of deposited material 731, including, but not limited to, Ag, Mg, and / or Yb, since thin metal films, especially when formed as closed coatings 440, may exhibit high absorption of EM radiation.

[0167] It may further be hypothesized that exposed layer surfaces 11 that exhibit a low initial sticking probability to deposited materials 731, including but not limited to Ag, Mg, and / or Yb, may exhibit high permeability, whereas exposed layer surfaces 11 that exhibit a high sticking probability to deposited materials 731, including but not limited to Ag, Mg, and / or Yb, may exhibit low permeability.

[0168] A series of samples were prepared to measure the transmittance of the example materials and to visually observe whether a closed coating 440 of Ag was formed on the exposed layer surface 11 of such example materials. Each sample was prepared by depositing a coating of the example material approximately 50 nm thick on a glass substrate, and then subjecting the exposed layer surface 11 of the coating to a vapor flux of Ag at a rate of approximately 1 Å / sec until a nominal layer thickness of approximately 15 nm was reached. Each sample was then visually analyzed, and the transmittance of each sample was measured.

[0169] The molecular structures of the example materials used in the samples herein are shown below.

[0170] [Table 4-1]

[0171] [Table 4-2]

[0172] [Table 4-3]

[0173] Samples on which a substantially closed coating 440 of Ag was formed were visually identified, and the presence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of about 50% or less at a wavelength of about 460 nm.

[0174] Samples were also identified that did not have a closed coating of Ag 440 formed, and the absence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of greater than about 70% at a wavelength of about 460 nm.

[0175] The results are summarized below.

[0176] [Table 5]

[0177] Based on the above, it has been found that the materials used in the first seven samples (HT211 to Example Material 2) in Tables 4 and 5 may not be well suited to inhibiting the deposition of deposition materials 731 thereon, including but not limited to Ag and / or Ag-containing materials.

[0178] On the other hand, it has been found that Example Materials 3 through 9 may be suitable, at least in some non-limiting applications, to act as patterned coatings 610 to inhibit deposition thereon of deposition materials 731, including, but not limited to, Ag and / or Ag-containing materials.

[0179] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can have a surface energy of less than or equal to at least one of about 24 dynes / cm, about 22 dynes / cm, about 20 dynes / cm, about 18 dynes / cm, about 16 dynes / cm, about 15 dynes / cm, about 13 dynes / cm, about 12 dynes / cm, or about 11 dynes / cm under conditions similar to the deposition of the patterned coating in device 400.

[0180] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, about 7 dynes / cm, or about 8 dynes / cm.

[0181] In some non-limiting examples, the surface energy may be at least one of about 10-20 dynes / cm, about or about 13-19 dynes / cm.

[0182] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, detailed in W. A. ​​Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0183] By way of non-limiting example, a series of samples were prepared to measure the critical surface tension of surfaces formed by various materials. The results are summarized below.

[0184] [Table 6]

[0185] Based on the foregoing measurements of critical surface tension and previous observations regarding the presence or absence of a substantially closed coating 440 of Ag, it has been discovered that materials that form a low surface energy surface when deposited as a coating, which may have at least one critical surface tension of, by way of non-limiting example, about 13-20 dynes / cm or about 13-19 dynes / cm, may be suitable for forming a patterned coating 610 to inhibit the deposition of deposition materials 731 thereon, including, but not limited to, Ag and / or Ag-containing materials.

[0186] Without wishing to be bound by any particular theory, it may be hypothesized, by way of non-limiting example, that materials that form surfaces having surface energies lower than about 13 dynes / cm may be less suitable as patterning material 611 in certain applications because such materials may exhibit relatively poor adhesion to layers surrounding them, may exhibit low melting points, and / or may exhibit low sublimation temperatures.

[0187] In some non-limiting examples, patterned coating 610 and / or patterned material 611 may have a low refractive index when deposited as a film and / or some form of coating under conditions similar to the deposition of patterned coating 610 in device 400, in some non-limiting examples.

[0188] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can have a refractive index that can be less than or equal to at least one of about 1.55, about 1.5, about 1.45, about 1.43, about 1.4, about 1.39, about 1.37, about 1.35, about 1.32, or about 1.3 for EM radiation of a wavelength of about 550 nm under conditions similar to the deposition of patterned coating 610 in device 400.

[0189] Without wishing to be bound by any particular theory, it has been observed that providing a patterned coating 610 with a low refractive index can improve the transmission of external EM radiation through its second portion 602 in at least some devices 400. As a non-limiting example, a device 400 including an air gap therein, which may be disposed near or adjacent to the patterned coating 610, can exhibit higher transmission relative to a similarly configured device that was not provided with such a low refractive index patterned coating 610, when the patterned coating 610 has a low refractive index.

[0190] By way of non-limiting example, a series of samples were prepared to measure the refractive index at a wavelength of 550 nm for coatings formed from some of the various example materials. The results are summarized below.

[0191] [Table 7]

[0192] Based on the foregoing measurements of the refractive indices in Table 7 and previous observations regarding the presence or absence of a substantially closed coating 440 of Ag, it has been found that materials that form low refractive index coatings, which may have refractive indices less than or equal to at least one of about 1.4 or 1.38, as non-limiting examples, may be suitable for forming patterned coatings 610 to inhibit the deposition of deposition materials 731 thereon, including, but not limited to, Ag and / or Ag-containing materials.

[0193] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be about 0.01 or less for photons of wavelengths that are at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm under conditions similar to the deposition of patterned coating 610 in device 400.

[0194] In some non-limiting examples, patterned coating 610 and / or patterned coating material 611, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the visible light spectrum, under conditions similar to the deposition of patterned coating 610 in device 400, in some non-limiting examples.

[0195] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the IR and / or NIR spectrum, under conditions similar to the deposition of patterned coating 610 in device 400.

[0196] In some non-limiting examples, patterned coating 610 and / or patterned coating 611, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be at least one of at least about 0.05, about 0.1, about 0.2, or about 0.5 for EM radiation having a wavelength shorter than at least one of about 400 nm, about 390 nm, about 380 nm, or about 370 nm, under conditions similar to the deposition of patterned coating 610 in device 400. In this manner, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can absorb EM radiation in the UVA spectrum that is incident on device 400 under conditions similar to the deposition of patterned coating 610 in device 400, thereby reducing the likelihood that EM radiation in the UVA spectrum can have an undesirable effect on device performance, device stability, device reliability, and / or device lifetime.

[0197] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can have a glass transition temperature that is less than or equal to at least one of about 300°C, about 150°C, about 130°C, about 30°C, about 0°C, about −30°C, or about −50°C under conditions similar to the deposition of patterned coating 610 in device 400.

[0198] In some non-limiting examples, the patterning material may have a sublimation temperature of at least one of about 100-320° C., about 120-300° C., about 140-280° C., or about 150-250° C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 611 to be readily deposited as a coating using PVD.

[0199] The sublimation temperature of a material can be determined using a variety of methods apparent to those skilled in the relevant art, including, but not limited to, by heating the material under high vacuum in a crucible and determining the temperature that can be achieved as follows: Observe the onset of material deposition onto the surface on a QCM mounted at a fixed distance from the crucible, Observe a specific deposition rate, for example, 0.1 Å / sec, on the surface on a QCM mounted at a fixed distance from the crucible; and / or As a non-limiting example, about 10 -4 or about 10 -5 Torr to reach the material's threshold vapor pressure.

[0200] In some non-limiting examples, the sublimation temperature of the material may be, for example, about 10 -4 The temperature that can be achieved to evaporate the material may also be determined by heating the material in an evaporation source in a high vacuum environment of 100 Torr, and thus generating a vapor flux sufficient to cause deposition of the material onto a surface on a QCM mounted a fixed distance from the evaporation source, at a deposition rate of about 0.1 Å / sec, as a non-limiting example.

[0201] In some non-limiting examples, a QCM may be mounted approximately 65 cm from the crucible for purposes of determining the sublimation temperature.

[0202] In some non-limiting examples, patterned coating 610 and / or patterned material 611 may include fluorine (F) atoms and / or silicon (Si) atoms. As a non-limiting example, patterned material 611 for forming patterned coating 610 may be a compound including F and / or Si.

[0203] In some non-limiting examples, patterned coating 611 may include a compound containing F. In some non-limiting examples, patterned coating 611 may include a compound containing F and carbon (C) atoms. In some non-limiting examples, patterned coating 611 may include a compound containing F and C in an atomic ratio corresponding to an F / C quotient of at least one of at least about 1, about 1.5, or about 2. In some non-limiting examples, the atomic ratio of F to C counts all of the F atoms present in the compound structure and, for C atoms, counts the sp atoms present in the compound structure. 3 It can be determined by counting only the hybridized C atoms. In some non-limiting examples, the patterned coating 611 may include, as part of its molecular substructure, a compound that includes moieties containing F and C in an atomic ratio corresponding to an F / C quotient of at least about 1, about 1.5, or about 2.

[0204] In some non-limiting examples, the compound of patterned coating 611 may be an organic-inorganic hybrid material.

[0205] In some non-limiting examples, patterned coating 611 may be or include an oligomer.

[0206] In some non-limiting examples, the patterned coating 611 may be or may include a compound having a molecular structure containing a backbone and at least one functional group attached to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety and the at least one functional group may be an organic moiety.

[0207] In some non-limiting examples, such compounds may have a molecular structure containing siloxane groups. In some non-limiting examples, the siloxane groups may be linear, branched, or cyclic siloxane groups. In some non-limiting examples, the backbone may be or may include siloxane groups. In some non-limiting examples, the backbone may be or may include siloxane groups and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosiloxanes. Non-limiting examples of such compounds are Example Material 6 and Example Material 9.

[0208] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may be or include a silsesquioxane group. In some non-limiting examples, the backbone may be or include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluoro-silsesquioxane and / or fluoro-POSS. A non-limiting example of such a compound is Example Material 8.

[0209] In some non-limiting examples, the compound may have a molecular structure including a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, one or more C atoms of the aryl group may be replaced by a heteroatom, which may be, for non-limiting examples, oxygen (O), nitrogen (N), and / or sulfur (S), to derive a heteroaryl group. In some non-limiting examples, the backbone may be or include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0210] In some non-limiting examples, the compounds may have molecular structures that include substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be replaced by a heteroatom, which may be, by way of non-limiting example, O, N, and / or S.

[0211] In some non-limiting examples, the compound can have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group can be a linear, branched, or cyclic phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group and at least one functional group including F. In some non-limiting examples, the at least one functional group including F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is Example Material 4.

[0212] In some non-limiting examples, the compound can be a fluoropolymer. In some non-limiting examples, the compound can be a block copolymer containing F. In some non-limiting examples, the compound can be an oligomer. In some non-limiting examples, the oligomer can be a fluoro-oligomer. In some non-limiting examples, the compound can be a block oligomer containing F. Non-limiting examples of fluoropolymers and / or fluoro-oligomers are those having the molecular structures of Example Material 3, Example Material 5, and / or Example Material 7.

[0213] In some non-limiting examples, the compound can be a metal complex. In some non-limiting examples, the metal complex can be an organometallic complex. In some non-limiting examples, the organometallic complex can include F. In some non-limiting examples, the organometallic complex can include at least one ligand that includes F. In some non-limiting examples, the at least one ligand that includes F can be or include a fluoroalkyl group.

[0214] In some non-limiting examples, patterning material 611 may be or may include an organic-inorganic hybrid material.

[0215] In some non-limiting examples, patterned coating 611 may include multiple different materials.

[0216] In some non-limiting examples, the molecular weight of the compound of patterning material 611 may be less than or equal to at least one of about 5,000 g / mol, about 4,500 g / mol, about 4,000 g / mol, about 3,800 g / mol, or about 3,500 g / mol.

[0217] In some non-limiting examples, the molecular weight of the compound of patterning material 611 may be at least about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, or about 2,500 g / mol.

[0218] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds adapted to form surfaces having relatively low surface energy, at least in some applications, there may be a goal that the molecular weight of such compounds be at least one of about 1,500-5,000 g / mol, about 1,500-4,500 g / mol, about 1,700-4,500 g / mol, about 2,000-4,000 g / mol, about 2,200-4,000 g / mol, or about 2,500-3,800 g / mol.

[0219] Without wishing to be bound by any particular theory, it may be hypothesized that such compounds may exhibit at least one property that may be suitable for forming coatings and / or layers having (i) a relatively high melting point, by way of non-limiting example, of at least 100°C, (ii) a relatively low surface energy, and / or (iii) a substantially amorphous structure when deposited using a vacuum-based thermal evaporation process, by way of non-limiting example.

[0220] In some non-limiting examples, the percentage of the molar weight of such compounds attributable to the presence of F atoms can be at least one of about 40-90%, about 45-85%, about 50-80%, about 55-75%, or about 60-75%. In some non-limiting examples, the F atoms can constitute a majority of the molar weight of such compounds.

[0221] In some non-limiting examples, the patterned coating 610 may be disposed in a pattern that may be defined by at least one region of the patterned coating 610 that is substantially free of the closed coating 440. In some non-limiting examples, the at least one region may separate the patterned coating 610 into a plurality of distinct pieces thereof. In some non-limiting examples, the plurality of distinct pieces of the patterned coating 610 may be separated into a plurality of distinct pieces thereof. HorizontalIn some non-limiting examples, the plurality of distinct pieces of patterned coating 610 may be arranged in an ordered structure, including, but not limited to, an array or matrix, such that in some non-limiting examples, the distinct pieces of patterned coating 610 are arranged in a repeating pattern.

[0222] In some non-limiting examples, at least one of the plurality of distinct segments of patterned coating 610 can each correspond to an emission region 1610. In some non-limiting examples, the aperture ratio of emission region 1610 can be less than or equal to at least one of about 50%, about 40%, about 30%, or about 20%.

[0223] In some non-limiting examples, patterned coating 610 may be formed as a single monolithic coating.

[0224] In some non-limiting examples, patterned coating 610 and / or patterned material 611, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be about 0.01 or less for photons of wavelengths greater than at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm under conditions similar to the deposition of patterned coating 610 in device 400.

[0225] In some non-limiting examples, the patterned coating 610 can have and / or provide at least one nucleation site for the deposition material 731 due to the patterning material 611 and / or deposition environment used, but is not limited to these.

[0226] In some non-limiting examples, the patterned coating 610 may be doped, covered, and / or supplemented with another material that can act as a seed or inhomogeneity to act as such nucleation sites for the deposited material 731. In some non-limiting examples, such other material may include a nucleation promoting coating (NPC) 920 (FIG. 9C) material. In some non-limiting examples, such other material may include, by way of non-limiting example, organic materials such as polycyclic aromatic compounds and / or materials containing non-metallic elements such as at least one of O, S, N, or C, the presence of which may otherwise be contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a monolayer to avoid the formation of a closed coating 440 thereof. Rather, monomers of such other material may be deposited in a layer thickness that is a fraction of a monolayer to form individual nucleation sites for the deposited material. Horizontal tend to be spaced apart.

[0227] In some non-limiting examples, the patterned coating 610 may function as an optical coating. In some non-limiting examples, the patterned coating 610 may modify at least one property and / or characteristic of the EM radiation (including, but not limited to, the form of photons) emitted by the device 400. In some non-limiting examples, the patterned coating 610 may exhibit some degree of haze, scattering the emitted EM radiation. In some non-limiting examples, the patterned coating 610 may include a crystalline material for scattering EM radiation transmitted therethrough. Such scattering of EM radiation may, in some non-limiting examples, facilitate enhanced outcoupling of EM radiation from the device. In some non-limiting examples, the patterned coating 610 may initially be deposited as a substantially amorphous coating, including, but not limited to, a substantially amorphous coating, and after its deposition, the patterned coating 610 may be crystallized and then function as an optical coupler.

[0228] sedimentary layer In some non-limiting examples, the deposition layer 430 can include a deposition material 731 .

[0229] In some non-limiting examples, the deposition material 731 may include an element selected from at least one of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), copper (Cu), aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0230] In some non-limiting examples, the deposition material 731 may be and / or include a pure metal. In some non-limiting examples, the deposition material 731 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposition material 731 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0231] In some non-limiting examples, the deposition material 731 may include an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that may range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0232] In some non-limiting examples, the deposition material 731 may include other metals in place of and / or in combination with Ag. In some non-limiting examples, the deposition material 731 may include an alloy of Ag and at least one other metal. In some non-limiting examples, the deposition material 731 may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the deposition material 731 may include Ag and Mg. In some non-limiting examples, the deposition material 731 may include an Ag:Mg alloy having a composition of about 1:10 to 10:1 by volume. In some non-limiting examples, the deposition material 731 may include Ag and Yb. In some non-limiting examples, the deposition material 731 may include a Yb:Ag alloy having a composition of about 1:20 to 10:1 by volume. In some non-limiting examples, the deposition material 731 may include Mg and Yb. In some non-limiting examples, the deposition material 731 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 731 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 430 may include a Ag:Mg:Yb alloy.

[0233] In some non-limiting examples, the deposited layer 430 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of O, S, N, or C. Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the deposited layer 430 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the deposited layer 430. In some non-limiting examples, the concentration of non-metallic elements in the deposition material 731 can be less than or equal to at least one of about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%. In some non-limiting examples, the deposition layer 430 can have a composition in which the total amount of O and C therein can be less than or equal to at least one of about 10%, about 5%, about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%.

[0234] It has now been somewhat surprisingly discovered that reducing the concentration of certain non-metallic elements in the deposition layer 430 can facilitate selective deposition of the deposition layer 430, particularly where the deposition layer 430 may be substantially composed of a metal and / or metal alloy. Without wishing to be bound by any particular theory, it may be hypothesized that certain non-metallic elements, such as O or C, by way of non-limiting example, when present in the vapor flux 732 of the deposition layer 430 and / or in the deposition chamber and / or in the environment, may deposit on the surface of the patterned coating 610 and act as nucleation sites for the metal elements of the deposition layer 430. It may be hypothesized that reducing the concentration of such non-metallic elements that can act as nucleation sites can facilitate reducing the amount of deposition material 731 deposited on the exposed layer surface 11 of the patterned coating 610.

[0235] In some non-limiting examples, the deposited material 731 in the second portion 602 and the underlying underlayer 130 thereunder can include a common metal.

[0236] In some non-limiting examples, the deposition layer 430 may include multiple layers of deposition material 731. In some non-limiting examples, the deposition material 731 of a first layer of the multiple layers may be different from the deposition material 731 of a second layer of the multiple layers. In some non-limiting examples, the deposition layer 430 may include a multi-layer coating. In some non-limiting examples, such a multi-layer coating may be at least one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0237] In some non-limiting examples, the deposition material 731 may include a metal having a bond dissociation energy of less than or equal to at least one of about 300 kJ / mol, about 200 kJ / mol, about 165 kJ / mol, about 150 kJ / mol, about 100 kJ / mol, about 50 kJ / mol, or about 20 kJ / mol.

[0238] In some non-limiting examples, the deposition material 731 can include a metal having an electronegativity less than or equal to at least one of about 1.4, about 1.3, or about 1.2.

[0239] In some non-limiting examples, the sheet resistance of the deposited layer 430 may generally correspond to the sheet resistance of the deposited layer 430 measured or determined in isolation from other components, layers, and / or portions of the device 300. In some non-limiting examples, the deposited layer 430 may be formed as a thin film. Thus, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 430 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance may be less than or equal to at least one of about 10 Ω / □, about 5 Ω / □, about 1 Ω / □, about 0.5 Ω / □, about 0.2 Ω / □, or about 0.1 Ω / □.

[0240] In some non-limiting examples, the deposition layer 430 may be arranged in a pattern that may be defined by at least one region that is substantially free of the closed coating 440 of the deposition layer 430. In some non-limiting examples, the at least one region may separate the deposition layer 430 into a plurality of separate pieces thereof. In some non-limiting examples, each separate piece of the deposition layer 430 may be a separate second portion 602. In some non-limiting examples, the plurality of separate pieces of the deposition layer 430 may be a separate second portion 602. Horizontal In some non-limiting examples, at least two of such multiple separate pieces of the deposition layer 430 may be electrically coupled. In some non-limiting examples, at least two of such multiple separate pieces of the deposition layer 430 may each be electrically coupled to a common conductive layer or coating, including but not limited to the underlayer 130, to enable current flow therebetween. In some non-limiting examples, at least two of such multiple separate pieces of the deposition layer 430 may be electrically insulated from one another.

[0241] Selective Deposition Using Patterned Coatings FIG. 6 is an illustrative schematic diagram showing a non-limiting example of an evaporation deposition process, generally designated 600, in a chamber 60 for selectively depositing a patterned coating 610 onto a first portion 601 of an exposed layer surface 11 of an underlayer 130.

[0242] In process 600, a quantity of patterning material 611 is heated under vacuum to evaporate and / or sublimate patterning material 611. In some non-limiting examples, patterning material 611 may comprise entirely and / or substantially the material used to form patterned coating 610. In some non-limiting examples, such material may comprise an organic material.

[0243] A vaporized flux 612 of patterned material 611 may flow through chamber 60, including in the direction indicated by arrow 61, toward exposed layer surface 11. As vaporized flux 612 impinges on exposed layer surface 11, a patterned coating 610 may be formed thereon.

[0244] In some non-limiting examples, as shown in the diagram of process 600, patterned coating 610 may be selectively deposited on only a portion of exposed layer surface 11, in the illustrated example, first portion 601, by interposing a shadow mask 615, which in some non-limiting examples may be a fine metal mask (FMM), between vaporized flux 612 and exposed layer surface 11. In some non-limiting examples, such a shadow mask 615 may be used to form relatively small features, in some non-limiting examples, having feature sizes of tens of microns or less.

[0245] Shadow mask 615 can have at least one opening 616 extending therethrough such that a portion of vaporized flux 612 can pass through opening 616 and impinge on exposed layer surface 11 to form patterned coating 610. If vaporized flux 612 does not pass through opening 616 and impinges on surface 617 of shadow mask 615, it is prevented from being disposed on exposed layer surface 11 to form patterned coating 610. In some non-limiting examples, shadow mask 615 can be configured such that vaporized flux 612 passing through opening 616 can impinge on first portion 601 but not on second portion 602. Thus, second portion 602 of exposed layer surface 11 can be substantially devoid of patterned coating 610. In some non-limiting examples (not shown), patterned material 611 incident on shadow mask 615 can be deposited on its surface 617.

[0246] Thus, a patterned surface may be produced upon completion of deposition of patterned coating 610.

[0247] FIG. 7 illustrates a method, generally at 700° C., in a chamber 60 for selectively depositing a closed coating 440 of a deposition layer 430 onto a second portion 602 of an exposed layer surface 11 of an underlayer 130 that is substantially devoid of a patterned coating 610 selectively deposited on a first portion 601, including but not limited to by the deposition process 600 of FIG. 6 . a 1 is an illustrative schematic diagram showing a non-limiting example of the results of the deposition process shown in FIG.

[0248] In some non-limiting examples, the deposition layer 430 may be composed of a deposition material 731, which in some non-limiting examples includes at least one metal. Those skilled in the art will appreciate that organic materials typically have lower vaporization temperatures than metals, such as those that may be used as the deposition material 731.

[0249] Thus, in some non-limiting examples, using a shadow mask 615 to selectively deposit a patterned coating 610 in a pattern may be less constrained than using such a shadow mask 615 to directly pattern the deposition layer 430.

[0250] Once the patterned coating 610 is deposited on the first portion 601 of the exposed layer surface 11 of the underlayer 130, a closed coating 440 of the deposition material 731 may be deposited as a deposition layer 430 on the second portion 602 of the exposed layer surface 11 that is substantially free of the patterned coating 610.

[0251] Process 700 a In this case, a quantity of deposition material 731 can be heated under vacuum to evaporate and / or sublimate deposition material 731. In some non-limiting examples, deposition material 731 can comprise entirely and / or substantially the material used to form deposition layer 430.

[0252] A vaporized flux 732 of deposition material 731 may be directed toward the exposed layer surface 11 of the first portion 601 and the second portion 602, toward the interior of the chamber 60, including in the direction indicated by arrow 71. When the vaporized flux 732 is incident on the second portion 602 of the exposed layer surface 11, a closed coating 440 of the deposition material 731 may be formed thereon as the deposition layer 430.

[0253] In some non-limiting examples, deposition of deposition material 731 may be performed using open mask and / or mask-free deposition processes.

[0254] Those skilled in the art will appreciate that the feature size of the open mask, in contrast to the feature size of the shadow mask 615, may be approximately comparable to the size of the device 400 being fabricated.

[0255] It will be understood by those skilled in the art that in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, the open mask deposition processes described herein may alternatively be performed without the use of an open mask such that the entire target exposure layer surface 11 may be exposed.

[0256] In fact, as shown in FIG. 7, the vaporization flux 732 can be incident on both the exposed layer surface 11 of the patterned coating 610 over the first portion 601 and the exposed layer surface 11 of the underlayer 130 over the second portion 602 that is substantially free of the patterned coating 610.

[0257] Because the exposed layer surface 11 of the patterned coating 610 in the first portion 601 may exhibit a relatively low initial sticking probability for deposition of the deposition material 731 relative to the exposed layer surface 11 of the underlayer 130 in the second portion 602, the deposition layer 430 may be deposited substantially selectively only on the exposed layer surface 11 of the underlayer 130 in the second portion 602 that is substantially free of the patterned coating 610. In contrast, the evaporation flux 732 incident on the exposed layer surface 11 of the patterned coating 610 over the first portion 601 may tend not to be deposited (as shown at 733), and the exposed layer surface 11 of the patterned coating 610 over the first portion 601 may be substantially devoid of the closed coating 440 of the deposition layer 430.

[0258] In some non-limiting examples, the initial deposition rate of the vaporized flux 732 on the exposed layer surface 11 of the underlayer 130 in the second portion 602 may exceed at least one of approximately 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or approximately 2,000 times the initial deposition rate of the vaporized flux 732 on the exposed layer surface 11 of the patterned coating 610 in the first portion 601.

[0259] Thus, a combination of selective deposition of patterned coating 610 in FIG. 6 using a shadow mask 615 and an open mask and / or mask-free deposition of deposition material 731 can result in version 700 of device 400 shown in FIG.

[0260] After selective deposition of the patterned coating 610 over the first portion 601, a closed coating 440 of deposition material 731 may be deposited over the device 700 as a deposition layer 430 using, in some non-limiting examples, an open mask and / or a mask-free deposition process, but may remain substantially only within the second portion 602 that is substantially free of the patterned coating 610.

[0261] The patterned coating 610 can provide an exposed layer surface 11 in the first portion 601 with a relatively low initial sticking probability S0 for deposition of the deposition material 731 that is substantially less than the initial sticking probability S0 for deposition of the deposition material 731 of the exposed layer surface 11 of the underlying material of the device 700 in the second portion 602.

[0262] Thus, the first portion 601 may be substantially devoid of a closed coating 440 of the deposition material 731 .

[0263] Although the present disclosure contemplates patterned deposition of patterned coating 610 by an evaporation deposition process involving a shadow mask 615, those skilled in the art will understand that in some non-limiting examples, this may be achieved by any suitable deposition process, including, but not limited to, a microcontact printing process.

[0264] While the present disclosure contemplates that the patterned coating 610 is a nucleation-inhibiting coating (NIC), one skilled in the art will understand that in some non-limiting examples, the patterned coating 610 may be an NPC 920. In such examples, the portion onto which the NPC 920 is deposited (e.g., but not limited to, the first portion 601) may, in some non-limiting examples, have a closed coating 440 of the deposition material 731, while the other portion (e.g., but not limited to, the second portion 602) may be substantially devoid of the closed coating 440 of the deposition material 731.

[0265] In some non-limiting examples, the average thickness of the patterned coating 610 and the subsequently deposited deposition layer 430 may vary according to various parameters, including, but not limited to, a given application and given performance characteristics. In some non-limiting examples, the average thickness of the patterned coating 610 may be comparable to and / or substantially less than the average thickness of the subsequently deposited deposition layer 430. The use of a relatively thin patterned coating 610 to achieve selective patterning of the deposition layer 430 may be suitable for providing a flexible device 400. In some non-limiting examples, the relatively thin patterned coating 610 may provide a relatively flat surface onto which a barrier coating or other thin film encapsulation (TFE) layer 1450 may be deposited. In some non-limiting examples, providing such a relatively flat surface for application of such a barrier coating 1450 may enhance its adhesion to such a surface.

[0266] Edge Effect Patterned Coating Transition Region Referring to FIG. 8A, the device 800 of FIG. 4 may be seen in exaggerated form to show the interface between the patterned coating 610 in the first portion 601 and the deposited layer 430 in the second portion 602. a 8B shows a version 400 of the device 800. a can be shown in plan view.

[0267] As better seen in FIG. 8B , in some non-limiting examples, the patterned coating 610 in the first portion 601 may be surrounded on all sides by the deposited layer 430 in the second portion 602, such that the first portion 601 has a thickness along each horizontal axis. Horizontal In some non-limiting examples, the patterned coating 610 may have a boundary defined by an additional extent or edge 815. Horizontal The patterned coating edge 815 in may be defined by the periphery of the first portion 601 in such an embodiment.

[0268] In some non-limiting examples, the first portion 601 can be: Horizontal At least one patterned coating transition region 601 t , where the thickness of the patterned coating 610 can transition from a maximum thickness to a reduced thickness. The area of ​​the first portion 601 that does not exhibit such a transition is the patterned coating non-transition portion 601 of the first portion 601. n In some non-limiting examples, the patterned coating 610 is identified as the patterned coating non-transition portion 601 of the first portion 601. n A substantially closed coating 440 can be formed in

[0269] In some non-limiting examples, the patterned coating transition region 601 t teeth, Horizontal In the first portion 601, the patterned coating non-transition portion 601 n and patterned coating edge 815.

[0270] In some non-limiting examples, in plan view, patterned coating transition region 601 t The patterned coating of the first portion 601 is the non-transition portion 601 n may surround and / or extend along the periphery of

[0271] In some non-limiting examples, along at least one horizontal axis, the patterned coating non-transition portion 601 n may occupy the entire first portion 601, thereby forming a patterned coating transition region 601 t does not exist between it and the second portion 602.

[0272] As shown in FIG. 8A, in some non-limiting examples, the patterned coating 610 may be patterned over the non-transition portion 601 of the first portion 601. n In some non-limiting examples, the patterned coating non-transition portion 601 of the first portion 601 may have an average film thickness d2 that may be in at least one range of about 1 to 100 nm, about 2 to 50 nm, about 3 to 30 nm, about 4 to 20 nm, about 5 to 15 nm, about 5 to 10 nm, or about 1 to 10 nm. n The average layer thickness d2 of the patterned coating 610 in the non-transition portion 601 may be substantially the same or constant throughout. n The thickness may remain within at least one of about 95% or 90% of the average thickness d2 of patterned coating 610.

[0273] In some non-limiting examples, the average film thickness d2 may be about 1 to 100 nm. In some non-limiting examples, the average film thickness d2 may be less than or equal to at least one of about 80 nm, about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 15 nm, or about 10 nm. In some non-limiting examples, the average film thickness d2 of patterned coating 610 may be greater than at least one of about 3 nm, about 5 nm, or about 8 nm.

[0274] In some non-limiting examples, the patterned coating of the first portion 601 non-transition portion 601 nThe average thickness d2 of patterned coating 610 in first portion 601 may be about 10 nm or less. Without being bound by any particular theory, it is somewhat surprising that the average thickness d2 of patterned coating 610 of greater than 0 and about 10 nm or less is, in at least some non-limiting examples, the average thickness d2 of patterned coating 610 in first portion 601, for example, the average thickness d2 of patterned coating non-transition portion 601 in n It has been found that this can provide certain advantages for achieving improved pattern contrast of the deposited layer 430 compared to a patterned coating 610 having an average film thickness d2 of more than 10 nm.

[0275] In some non-limiting examples, the patterned coating 610 may include a patterned coating transition region 601 t The patterned coating thickness may have a maximum to minimum value within the patterned coating transition region 601 of the first portion 601. In some non-limiting examples, the maximum value may be within the patterned coating transition region 601 of the first portion 601. t and patterned coating non-transition portion 601 n In some non-limiting examples, the minimum value may be at and / or near the boundary between the patterned coating edge 815 of the first portion 601 and the patterned coating non-transition portion 601 of the second portion 601. In some non-limiting examples, the maximum value may be at and / or near the boundary between the patterned coating edge 815 of the first portion 601 and the patterned coating non-transition portion 601 of the first portion 601. n In some non-limiting examples, the maximum value may be the average thickness d2 of the patterned coating non-transition portion 601 of the first portion 601. n In some non-limiting examples, the minimum value may be within a range of about 0 to 0.1 nm.

[0276] In some non-limiting examples, the patterned coating transition region 601 tThe patterned coating thickness profile at may be sloped and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, non-linear, parabolic, and / or exponential decay profile.

[0277] In some non-limiting examples, the patterned coating 610 may include a patterned coating transition region 601 t In some non-limiting examples, at least a portion of the underlayer 130 may be covered by the patterned coating transition region 601. t In some non-limiting examples, the patterned coating 610 may remain uncovered by the patterned coating 610 in the patterned coating transition region 601. t and / or at least a portion of the patterned coating non-transition portion 601 n At least a portion of the coating 440 may include a substantially closed coating 440 .

[0278] In some non-limiting examples, the patterned coating 610 may include a patterned coating transition region 601 t At least a portion of the discontinuous layer 340 may be included.

[0279] In some non-limiting examples, at least a portion of the patterned coating 610 in the first portion 601 can be substantially devoid of the closed coating 440 of the deposition layer 430. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 601 can be substantially devoid of the deposition layer 430 or deposition material 731.

[0280] In some non-limiting examples, the patterned coating non-transition portion 601 along at least one horizontal axis, including but not limited to the X axis. n may have a width of w1, and the patterned coating transition region 601 tmay have a width of w2. In some non-limiting examples, the patterned coating non-transition portion 601 n In some non-limiting examples, the patterned coating transition region 601 may have a cross-sectional area that may be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the patterned coating transition region 601 t In some non-limiting examples, the patterned coating transition region 601 t The cross-sectional area may be approximated by multiplying the average film thickness over the area by the width w1.

[0281] In some non-limiting examples, w1 can be greater than w2. In some non-limiting examples, the quotient of w1 / w2 can be at least one of about 5, about 10, about 20, about 50, about 100, about 500, about 1,000, about 1,500, about 5,000, about 10,000, about 50,000, or about 100,000.

[0282] In some non-limiting examples, at least one of w1 and w2 may exceed the average thickness d1 of the underlayer 130.

[0283] In some non-limiting examples, at least one of w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0284] Sedimentary layer transition region As better seen in FIG. 8B , in some non-limiting examples, the patterned coating 610 in the first portion 601 may be surrounded by the deposited layer 430 in the second portion 602, such that the second portion 602 is Horizontal 430, with a boundary defined by a further extent or edge 835 of the deposited layer 430. In some non-limiting examples: Horizontal The deposition layer edge 835 in such Horizontal The second portion 602 may be defined by an outer periphery of the second portion 602 at

[0285] In some non-limiting examples, the second portion 602 may include: Horizontal At least one deposition layer transition region 602 t The thickness of the deposition layer 430 may include a transition from a maximum thickness to a reduced thickness. The area of ​​the second portion 602 that does not exhibit such a transition is the deposition layer non-transition portion 602 of the second portion 602. n In some non-limiting examples, the deposition layer 430 is identified as the deposition layer non-transition portion 602 of the second portion 602. n A substantially closed coating 440 may be formed in the

[0286] In some non-limiting examples, in a plane, the deposition layer transition region 602 t teeth, Horizontal In the second portion 602, the deposition layer non-transition portion 602 n and the stack edge 835.

[0287] In some non-limiting examples, in plan view, deposition layer transition region 602 t The deposition layer non-transition portion 602 of the second portion 602 n may surround and / or extend along the periphery of

[0288] In some non-limiting examples, along at least one transverse axis, the deposition layer non-transition portion 602 of the second portion 602 n 602 between it and the first portion 601. t may occupy the entire second portion 602 such that there is no

[0289] 8A, in some non-limiting examples, the deposition layer 430 can have an average thickness d3 in the deposition layer non-transition portion 602n of the second portion 602 that can be within at least one of about 1 to 500 nm, about 5 to 200 nm, about 5 to 40 nm, about 10 to 30 nm, or about 10 to 100 nm. In some non-limiting examples, d3 can be greater than at least one of about 10 nm, about 50 nm, or about 100 nm. In some non-limiting examples, the deposition layer non-transition portion 602n of the second portion 602 can have an average thickness d3 in the deposition layer non-transition portion 602n of the second portion 602 that can be within at least one of about 1 to 500 nm, about 5 to 200 nm, about 5 to 40 nm, about 10 to 30 nm, or about 10 to 100 nm. t The average thickness d3 of the deposited layer 430 at may be substantially the same or constant throughout.

[0290] In some non-limiting examples, d3 may be greater than the average thickness di of the underlayer 130.

[0291] In some non-limiting examples, the quotient d3 / d1 can be at least one of about 1.5, about 2, about 5, about 10, about 20, about 50, or about 100. In some non-limiting examples, the quotient d3 / d1 can be within at least one of the ranges of about 0.1 to 10 or about 0.2 to 40.

[0292] In some non-limiting examples, d3 may be greater than the average film thickness d2 of patterned coating 610.

[0293] In some non-limiting examples, the quotient d3 / d2 can be at least one of about 1.5, about 2, about 5, about 10, about 20, about 50, or about 100. In some non-limiting examples, the quotient d3 / d2 can be within at least one of the ranges of about 0.2-10 or about 0.5-40.

[0294] In some non-limiting examples, d3 may exceed d2, and d2 may exceed di. In some other non-limiting examples, d3 may exceed d1, and d1 may exceed d2.

[0295] In some non-limiting examples, the quotient d2 / d1 can be between at least one of about 0.2 and 3, or about 0.1 and 5.

[0296] In some non-limiting examples, the deposition layer non-transition portion 602 of the second portion 602 along at least one horizontal axis, including but not limited to the X-axis. n In some non-limiting examples, the deposition layer non-transition portion 602 of the second portion 602 may have a width of w3. n may have a cross-sectional area a3, which may, in some non-limiting examples, be approximated by multiplying the average thickness d3 by the width w3.

[0297] In some non-limiting examples, w3 is the patterned coating non-transition portion 601 n In some non-limiting examples, w1 may be greater than w3.

[0298] In some non-limiting examples, the quotient w1 / w3 can be in the range of at least one of about 0.1 to 10, about 0.2 to 5, about 0.3 to 3, or about 0.4 to 2. In some non-limiting examples, the quotient w3 / w1 can be at least one of about 1, about 2, about 3, or about 4.

[0299] In some non-limiting examples, w3 may be greater than the average thickness d3 of the deposited layer 430.

[0300] In some non-limiting examples, the quotient w3 / d3 can be at least one of about 10, about 50, about 100, or about 500. In some non-limiting examples, the quotient w3 / d3 can be less than or equal to about 100,000.

[0301] In some non-limiting examples, the deposition layer 430 includes a deposition layer transition region 602 t The thickness of the second portion 602 can be increased from a maximum to a minimum within the deposition layer transition region 602. In some non-limiting examples, the maximum thickness can be increased within the deposition layer transition region 602 of the second portion 602. t and the non-transitional portion of the sedimentary layer 602 nIn some non-limiting examples, the minimum value may be at and / or near the boundary between the deposition layer non-transition portion 602 of the second portion 602. In some non-limiting examples, the maximum value may be at and / or near the boundary between the deposition layer non-transition portion 602 of the second portion 602. n In some non-limiting examples, the minimum value may be in the range of about 0 to 0.1 nm. In some non-limiting examples, the minimum value may be the average thickness d3 of the deposition layer non-transition portion 602 of the second portion 602. n The average thickness d3 in the

[0302] In some non-limiting examples, the deposition layer transition region 602 t The thickness profile at may be sloped and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, non-linear, parabolic, and / or exponential decay profile.

[0303] In some non-limiting examples, the exemplary version 800 of FIG. 8E of device 400 e As shown as a non-limiting example in FIG. 1, the deposition layer 430 is separated into a deposition layer transition region 602 t In some non-limiting examples, the deposition layer 430 may completely cover the underlying layer 130 in the deposition layer transition region 602. t In some non-limiting examples, at least a portion of the underlayer 130 may include a substantially closed coating 440 in the deposition layer transition region 602. t may not be covered by the deposition layer 430 in

[0304] In some non-limiting examples, the deposition layer 430 includes a deposition layer transition region 602 t At least a portion of the discontinuous layer 340 may be included.

[0305] Although not explicitly shown, one skilled in the art will understand that patterned material 611 may also be present to some extent at the interface between deposition layer 430 and underlayer 130. Such material may be deposited as a result of shadowing effects in which the deposited pattern is not identical to the pattern of the mask, which may, in some non-limiting examples, result in some evaporated patterned material 611 being deposited on masked portions of target exposure layer surface 11. By way of non-limiting example, such material may be formed as grain structures 341 and / or as a thin film having a thickness that may be substantially less than or equal to the average thickness of patterned coating 610.

[0306] overlap In some non-limiting examples, the deposition layer edge 835 may be formed in the patterned coating transition region 601 of the first portion 601. t from Horizontal 602, so that there is no overlap between the first portion 601 and the second portion 602 in the lateral direction.

[0307] In some non-limiting examples, at least a portion of the first portion 601 and at least a portion of the second portion 602 are: Horizontal Such overlap may be identified by overlap portion 803, as may be shown as a non-limiting example in Figure 8A, where at least a portion of second portion 602 overlaps at least a portion of first portion 601.

[0308] In some non-limiting examples, as shown by way of non-limiting example in FIG. 8F, deposition layer transition region 602 t At least a portion of the patterned coating transition region 601 t In some non-limiting examples, the patterned coating transition region 601 t At least a portion of the patterned coating transition region 601 may be substantially devoid of deposition layer 430 and / or deposition material 731. In some non-limiting examples, the deposition material 731 may be present in the patterned coating transition region 601. tA discontinuous layer 340 may be formed on at least a portion of the exposed layer surface 11 .

[0309] In some non-limiting examples, as shown by way of non-limiting example in FIG. 8G, deposition layer transition region 602 t At least a portion of the patterned coating of the first portion 601 is a non-transition portion 601 n may be disposed on at least a portion of the

[0310] Although not shown, one skilled in the art will understand that in some non-limiting examples, overlapping portion 803 may reflect a scenario in which at least a portion of first portion 601 overlaps with at least a portion of second portion 602.

[0311] Thus, in some non-limiting examples, the patterned coating transition region 601 t At least a portion of the deposition layer transition region 602 t In some non-limiting examples, at least a portion of the deposition layer transition region 602t may be substantially devoid of the patterned coating 610 and / or the patterned material 611. In some non-limiting examples, the patterned material 611 may be deposited in the deposition layer transition region 602. t A discontinuous layer 340 may be formed on at least a portion of the exposed layer surface.

[0312] In some non-limiting examples, the patterned coating transition region 601 t At least a portion of the deposition layer may be disposed on at least a portion of the deposition layer non-transition portion 602n of the second portion 602.

[0313] In some non-limiting examples, the patterned coating edge 815 can be: Horizontal In the second portion 602, the deposition layer non-transition portion 602 n It may be spaced apart from

[0314] In some non-limiting examples, the deposition layer 430 may be formed in the deposition layer non-transition portion 602 of the second portion 602.n and the deposition layer transition region 602 t Alternatively, the coating may be formed as a single monolithic coating over both the surface and the substrate.

[0315] Edge effects in patterned coatings and deposited layers. 9A-9I illustrate various potential behaviors of patterned coating 410 at the deposition interface with deposited layer 430. FIG.

[0316] 9A , a first example of a portion of an illustrative version 900 of device 400 at a patterned coating deposition interface can be shown. Device 900 can include a substrate 10 having an exposed layer surface 11. A patterned coating 610 can be deposited on a first portion 601 of exposed layer surface 11. A deposition layer 430 can be deposited on a second portion 602 of exposed layer surface 11. As shown, by way of non-limiting example, first portion 601 and second portion 602 can be separate, non-overlapping portions of exposed layer surface 11.

[0317] The deposited layer 430 may include a first portion 4301 and a remaining portion 4302 . As shown, by way of non-limiting example, the first portion 4301 of the deposition layer 430 can substantially cover the second portion 602, and the second portion 4302 of the deposition layer 430 can partially protrude and / or overlap the first portion of the patterned coating 610.

[0318] In some non-limiting examples, the patterned coating 610 can be formed such that its exposed layer surface 11 exhibits a relatively low initial sticking probability for the deposition of the deposition material 731, such that there can be a gap 929 formed between the protruding and / or overlapping second portion 4302 of the deposition layer 430 and the exposed layer surface 11 of the patterned coating 610. As a result, the second portion 4302 may not be in physical contact with the patterned coating 610, but may be separated therefrom in cross section by the gap 929. In some non-limiting examples, the first portion 4301 of the deposition layer 430 can be in physical contact with the patterned coating 610 at the interface and / or boundary between the first portion 601 and the second portion 602.

[0319] In some non-limiting examples, the overhanging and / or overlapping second portion 4302 of the deposited layer 430 has an average layer thickness d a As a non-limiting example, second portion 4302 may extend laterally over patterned coating 610 by an amount equal to a width w b is the average layer thickness d of the first portion 4301 a In some non-limiting examples, the width w of the second portion 4302 may be equal to b and the average layer thickness d of the first portion 4301 a The ratio of the average layer thickness d to the average layer thickness d may be within at least one of the ranges of about 1:1 to 1:3, about 1:1 to 1:1.5, or about 1:1 to 1:2. a may be relatively uniform across first portion 4301 in some non-limiting examples, but may vary in some non-limiting examples to an extent that second portion 4302 may protrude into and / or overlap patterned coating 610 (i.e., w b ) may vary to some extent over different portions of exposed layer surface 11.

[0320] 9B , deposition layer 430 may be shown to include a third portion 4303 disposed between second portion 4302 and patterned coating 610. As shown, second portion 4302 of deposition layer 430 may extend laterally over and be longitudinally spaced from third portion 4303 of deposition layer 430, and the third portion may be in physical contact with exposed layer surface 11 of patterned coating 610. The average layer thickness d of third portion 4303 of deposition layer 430 may be c is the average layer thickness d of the first portion 4301 a In some non-limiting examples, the width w of the third portion 4303 may be less than 1 / 2 mm, and in some non-limiting examples, may be substantially less than 1 / 2 mm. c is the width w of the second portion 4302 b In some non-limiting examples, third portion 4302 may extend laterally to overlap patterned coating 610 more than second portion 4302. In some non-limiting examples, width w of third portion 4303 c and the average layer thickness d of the first portion 4301 a The ratio of the average layer thickness d to the average layer thickness d may be within at least one of the ranges of about 1:2 to 3:1, or about 1:1.2 to 2.5:1. a may be relatively uniform across first portion 4301 in some non-limiting examples, but may vary in some non-limiting examples depending on the extent to which third portion 4303 may protrude into and / or overlap patterned coating 610 (i.e., w c ) may vary to some extent over different portions of exposed layer surface 11.

[0321] In some non-limiting examples, the average layer thickness d of the third portion 4303 c is the average layer thickness d of the first portion 4301 a As a non-limiting example, d c is d aAlternatively, and / or in addition to third portion 4303 being formed as a thin film, the material of deposited layer 430 may be formed as grain structures 341 over a portion of patterned coating 610, as shown. By way of non-limiting example, such grain structures 341 may include features that are physically separated from one another such that they do not form a continuous layer.

[0322] 9C , an NPC 920 may be disposed between the substrate 10 and the deposition layer 430. The NPC 920 may be disposed between a first portion 4301 of the deposition layer 430 and a second portion 602 of the substrate 10. The NPC 920 is shown as being disposed on the second portion 602, rather than on the first portion 601 on which the patterned coating 610 was deposited. The NPC 920 may be formed at the interface and / or boundary between the NPC 920 and the deposition layer 430 such that the surface of the NPC 920 may exhibit a relatively high initial sticking probability for the deposition of the deposition material 731. Thus, the presence of the NPC 920 may facilitate the formation and / or growth of the deposition layer 430 during deposition.

[0323] 9D , the NPC 920 may be disposed on both the first portion 601 and the second portion 602 of the substrate 10, and the patterned coating 610 may cover a portion of the NPC 920 disposed on the first portion 601. Another portion of the NPC 920 may be substantially devoid of the patterned coating 610, and the deposition layer 430 covers such portion of the NPC 920.

[0324] 9E , the deposition layer 430 may be shown overlapping a portion of the patterned coating 610 in a third portion 903 of the substrate 10. In some non-limiting examples, in addition to the first portion 4301 and the second portion 4302, the deposition layer 430 can further include a fourth portion 4304. As shown, the fourth portion 4304 of the deposition layer 430 may be disposed between the first portion 4301 and the second portion 4302 of the deposition layer 430, and the fourth portion 4304 may be in physical contact with the exposed layer surface 11 of the patterned coating 610. In some non-limiting examples, the overlap in the third portion 903 may be formed as a result of lateral growth of the deposition layer 430 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 610 may exhibit a relatively low initial adhesion probability for the deposition of the deposition material 731, and therefore the probability of material nucleating on the exposed layer surface 11 may be low, but as the thickness of the deposition layer 430 grows, the deposition layer 430 may also grow laterally and cover a subset of the patterned coating 610 as shown.

[0325] 9F, a first portion 601 of the substrate 10 may be coated with a patterned coating 610, and an adjacent second portion 602 may be coated with a deposition layer 430. In some non-limiting examples, it has been observed that open-mask and / or mask-free deposition of the deposition layer 430 may cause the deposition layer 430 to exhibit a tapered cross-sectional profile at and / or near the interface between the deposition layer 430 and the patterned coating 610.

[0326] In some non-limiting examples, the average thickness of the deposition layer 430 at and / or near the interface may be less than or equal to the average film thickness d3 of the deposition layer 430. While such a tapered profile may be depicted as curved and / or arcuate, in some non-limiting examples, the profile may be substantially linear and / or non-linear. By way of non-limiting example, the average thickness of the deposition layer 430 may decrease substantially linearly, exponentially, and / or quadratically in the region proximate the interface.

[0327] The contact angle θ of the deposited layer 430 at and / or near the interface between the deposited layer 430 and the patterned coating 610 C It has been observed that the contact angle θ of the nuclei can vary depending on the properties of the patterned coating 610, such as the relative initial adhesion probability. c It may further be assumed that, in some non-limiting examples, the contact angle θ may determine the thin film contact angle of the deposition layer 430 formed by deposition. Referring to FIG. 9F as a non-limiting example, the contact angle θ c can be determined by measuring the slope of a tangent to the deposited layer 430 at or near the interface between the deposited layer 430 and the patterned coating 610. In some non-limiting examples, when the cross-sectional tapered profile of the deposited layer 430 can be substantially linear, the contact angle θ c can be determined by measuring the slope of the deposited layer 430 at and / or near the interface. As will be appreciated by those skilled in the art, the contact angle θ c can generally be measured relative to the angle of the underlying layer 130. In this disclosure, for ease of explanation, the patterned coating 610 and the deposition layer 430 may be shown deposited on a planar surface. However, one skilled in the art will understand that the patterned coating 610 and the deposition layer 430 may also be deposited on a non-planar surface.

[0328] In some non-limiting examples, the contact angle θ of the deposited layer 430 cmay be greater than about 90°. Referring now to FIG. 9G, by way of non-limiting example, deposited layer 430 may be shown as including a portion that extends beyond the interface between patterned coating 610 and deposited layer 430, and may be separated from patterned coating 610 by gap 929. In such a non-limiting scenario, contact angle θ c may be greater than 90° in some non-limiting examples.

[0329] In some non-limiting examples, a relatively high contact angle θ c It may be advantageous to form a deposited layer 430 that exhibits a contact angle θ c may be greater than at least one of about 10°, about 15°, about 20°, about 25°, about 30°, about 35°, about 40°, about 50°, about 70°, about 75°, or about 80°. c A deposited layer 430 having a contact angle θ greater than about 90° can enable the creation of finely patterned features while maintaining a relatively high aspect ratio. c As a non-limiting example, the objective may be to form a deposited layer 430 that exhibits a contact angle θ c may be greater than at least one of about 90°, about 95°, about 100°, about 105°, about 110°, about 120°, about 130°, about 135°, about 140°, about 145°, about 150°, or about 170°.

[0330] 9H-9I, the deposition layer 430 may overlap a portion of the patterned coating 610 in a third portion 903 of the substrate 10, which may be disposed between the first and second portions 601, 602 thereof. As shown, the subset of the deposition layer 430 that overlaps the subset of the patterned coating 610 may be in physical contact with the exposed layer surface 11 thereof. In some non-limiting examples, the overlap in the third portion 903 may be formed due to lateral growth of the deposition layer 430 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 610 may exhibit a relatively low initial sticking probability for the deposition of the deposition material 731, and therefore, the probability of material nucleating on the exposed layer surface 11 may be low; however, as the thickness of the deposition layer 430 grows, the deposition layer 430 also grows laterally, covering the subset of the patterned coating 610.

[0331] In the cases of FIGS. 9H to 9I, the contact angle θ of the deposition layer 430 c can be measured at its edge near the interface between it and patterned coating 610, as shown. In FIG. 9I, the contact angle θ c may be greater than about 90°, which, in some non-limiting examples, may result in a subset of the deposited layer 430 being separated from the patterned coating 610 by a gap 929.

[0332] particle 8C , there may be at least one particle, including but not limited to, nanoparticles (NPs), islands, plates, isolated clusters, and / or networks (collectively, particle structures 341), disposed on the exposed layer surface 11 of the underlayer 130. In some non-limiting examples, the underlayer 130 may be a patterned coating 610 in the first portion 601. In some non-limiting examples, at least one particle structure 341 may be disposed on the exposed layer surface 11 of the patterned coating 610. In some non-limiting examples, there may be multiple such particle structures 341.

[0333] In some non-limiting examples, the at least one grain structure 341 can include a grain structure material, which can be the same as the deposition material 731 in the deposition layer 430.

[0334] In some non-limiting examples, the grain structure material in the discontinuous layer 340 in the first portion 601, the deposition material 731 in the deposition layer 430, and / or the underlying underlayer 130 may be composed of a material may include a common metal.

[0335] In some non-limiting examples, the grain structure material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0336] In some non-limiting examples, the grain structure material may include a pure metal. In some non-limiting examples, at least one grain structure 341 may be a pure metal. In some non-limiting examples, at least one grain structure 341 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one grain structure 341 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0337] In some non-limiting examples, at least one particle structure 341 can include an alloy. In some non-limiting examples, the alloy can be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy can have an alloy composition that can range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0338] In some non-limiting examples, the grain structure material may include other metals in place of or in combination with Ag. In some non-limiting examples, the grain structure material may include an alloy of Ag and at least one other metal. In some non-limiting examples, the grain structure material may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the grain structure material may include Ag and Mg. In some non-limiting examples, the grain structure material may include an Ag:Mg alloy having a composition in a volume ratio of about 1:10 to 10:1. In some non-limiting examples, the grain structure material may include Ag and Yb. In some non-limiting examples, the grain structure material may include a Yb:Ag alloy having a composition in a volume ratio of about 1:20 to 10:1. In some non-limiting examples, the grain structure material may include Mg and Yb. In some non-limiting examples, the grain structure material may include a Mg:Yb alloy. In some non-limiting examples, the grain structure material may include a Ag:Mg:Yb alloy.

[0339] In some non-limiting examples, the at least one grain structure 341 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be at least one of O, S, N, or C. Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the at least one grain structure 341 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such additional elements may form compounds with other elements of the at least one grain structure 341. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 731 may be less than or equal to at least one of about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%. In some non-limiting examples, at least one particle structure 341 can have a composition in which the total amount of O and C therein is less than or equal to at least one of about 10%, about 5%, about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%.

[0340] In some non-limiting examples, the presence of at least one particle structure 341, including but not limited to NPs, including but not limited to within the discontinuous layer 340 on the exposed layer surface 11 of the patterned coating 610, can affect some optical properties of the device 800.

[0341] In some non-limiting examples, such a plurality of grain structures 341 may form a discontinuous layer 340 .

[0342] Without wishing to be limited to any particular theory, it may be hypothesized that the formation of a closed coating 440 of deposition material 731 may be substantially inhibited by and / or on the patterned coating 610, but in some non-limiting examples, when the patterned coating 610 is exposed to the deposition of deposition material 731 thereon, some vapor monomers 732 of the deposition material 731 may ultimately form at least one particle structure 341 of the deposition material 731 thereon.

[0343] In some non-limiting examples, at least some of the grain structures 341 may be separated from one another. In other words, in some non-limiting examples, the discontinuous layer 340 may include features including grain structures 341 that may be physically separated from one another such that the grain structures 341 do not form a closed coating 440. Such a discontinuous layer 340 may therefore, in some non-limiting examples, include a thin, dispersed layer of deposition material 731 formed as grain structures 341 interposed at and / or substantially across the lateral extent of the interface between the patterned coating 610 and at least one overlying layer within the device 300.

[0344] In some non-limiting examples, at least one of the grain structures 341 of the deposited material 731 may be in physical contact with the exposed layer surface 11 of the patterned coating 610. In some non-limiting examples, substantially all of the grain structures 341 of the deposited material 731 may be in physical contact with the exposed layer surface 11 of the patterned coating 610.

[0345] Without being bound by any particular theory, it has been somewhat surprisingly discovered that the presence of such a thin, dispersed, discontinuous layer 340 of deposited material 731, including at least one grain structure 341, including, but not limited to, a metallic grain structure 341, on the exposed layer surface 11 of the patterned coating 610 can exhibit at least one altered property, and concomitantly altered behavior, including, but not limited to, the optical effects and properties of the device 300, as described herein. In some non-limiting examples, such effects and properties can be controlled to some extent by judicious selection of at least one of the characteristic size, size distribution, shape, surface coverage, configuration, deposition density, and / or dispersion of the grain structures 341 on the patterned coating 610.

[0346] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such discontinuous layer 340 can be controlled, in some non-limiting examples, by judicious selection of at least one property of patterned material 611, average film thickness d2 of patterned coating 610, introduction of non-uniformities in patterned coating 610, and / or at least one of the deposition environment, including but not limited to the temperature, pressure, duration, deposition rate, and / or deposition process of patterned coating 610.

[0347] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity of such discontinuous layer 340 may be controlled, in some non-limiting examples, by judicious selection of at least one property of the grain structure material (which may be deposition material 731), the extent to which the patterned coating 610 may be exposed to the deposition of the grain structure material (which may, in some non-limiting examples, be specified in terms of the thickness of the corresponding discontinuous layer 340), and / or at least one of the deposition environment, including, but not limited to, the temperature, pressure, duration, deposition rate, and / or deposition method of the grain structure material.

[0348] In some non-limiting examples, the discontinuous layer 340 may be deposited in a pattern across the lateral extent of the patterned coating 610 .

[0349] In some non-limiting examples, the discontinuous layer 340 can be arranged in a pattern that can be defined by at least one region therein that is substantially devoid of at least one grain structure 341.

[0350] In some non-limiting examples, the properties of such discontinuous layer 340 may be evaluated somewhat arbitrarily, in some non-limiting examples, according to at least one of several criteria, including, but not limited to, the characteristic size, size distribution, shape, composition, surface coverage, deposition distribution, degree of dispersion, and / or the presence and / or extent of agglomeration instances of the particulate structure material formed on the portion of the exposed layer surface 11 of the underlying layer 130.

[0351] In some non-limiting examples, evaluation of the discontinuous layer 340 according to such at least one criterion may be performed by, including but not limited to, measuring and / or calculating at least one attribute of the discontinuous layer 340 using various imaging techniques, including but not limited to, at least one of transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM).

[0352] Those skilled in the art will appreciate that such assessment of discontinuous layer 340 may depend to a greater or lesser extent on the extent of exposed layer surface 11 under consideration, and may, in some non-limiting examples, comprise areas and / or regions thereof. In some non-limiting examples, discontinuous layer 340 may comprise a first portion of exposed layer surface 11. Horizontal and / or a second substantially transverse thereto Horizontal In some non-limiting examples, the discontinuous layer 340 may be evaluated over a range that includes at least one observation window applied to (a portion of) the discontinuous layer 340.

[0353] In some non-limiting examples, the at least one observation window is located at the exposed layer surface 11. Horizontal The scalar may be located at least one of a periphery, an internal location, and / or a grid coordinate. In some non-limiting examples, a plurality of at least one observation window may be used in evaluating the discontinuous layer 340 .

[0354] In some non-limiting examples, the observation window may correspond to the field of view of an imaging technique applied to evaluate the discontinuous layer 340, including, but not limited to, at least one of a TEM, an AFM, and / or an SEM. In some non-limiting examples, the observation window may correspond to a given magnification level, including, but not limited to, at least one of 2.00 μm, 1.00 μm, 500 nm, or 200 nm.

[0355] In some non-limiting examples, evaluation of the exposed layer surface 11 of the discontinuous layer 340, including but not limited to at least one observation window used, may include calculating and / or measuring by any number of mechanisms, including but not limited to manual counting and / or known estimation techniques, which may include curve, polygon, and / or shape-fitting techniques, in some non-limiting examples.

[0356] In some non-limiting examples, evaluation of the discontinuous layer 340, including but not limited to, at least one observation window used on its exposed layer surface 11, may involve calculating and / or measuring the mean, median, mode, maximum, minimum, and / or other probabilistic, statistical, and / or data manipulation of the calculated and / or measured values.

[0357] In some non-limiting examples, one of the at least one criteria by which such discontinuous layer 340 may be evaluated may be the surface coverage of the deposition material 731 on (a portion of) such discontinuous layer 340. In some non-limiting examples, the surface coverage may be represented by a (non-zero) percentage coverage of (a portion of) such discontinuous layer 340 by such deposition material 731. In some non-limiting examples, the coverage may be compared to a maximum threshold percentage coverage.

[0358] In some non-limiting examples, (portions of) discontinuous layer 340 having a surface coverage that may be substantially below the maximum threshold percentage coverage may result in EM radiation passing through portions of discontinuous layer 340 having a surface coverage that is substantially above the maximum threshold percentage coverage exhibiting different optical properties that may be imparted by such portions of discontinuous layer 340 to the EM radiation passing therethrough, whether fully transmitted through device 300 and / or emitted thereby.

[0359] In some non-limiting examples, one measure of the surface coverage of a certain amount of conductive material on a surface can be the (light) transmittance, since conductive materials, including but not limited to metals, including but not limited to Ag, Mg, or Yb, attenuate and / or absorb photons.

[0360] Those skilled in the art will appreciate that, in some non-limiting examples, surface coverage may be understood to encompass one or both of particle size and deposition density. Thus, in some non-limiting examples, more than one of these three criteria may be positively correlated. Indeed, in some non-limiting examples, the low surface coverage criterion may include some combination of the low deposition density criterion and the low particle size criterion.

[0361] In some non-limiting examples, at least one criterion by which such discontinuous layers 340 may be evaluated may be the characteristic size of the constituent particle structures 341 .

[0362] In some non-limiting examples, at least one grain structure 341 of the discontinuous layer 340 may have a characteristic size that is less than or equal to a maximum threshold size. Non-limiting examples of the characteristic size may include at least one of height, width, length, and / or diameter.

[0363] In some non-limiting examples, substantially all of the grain structures 341 of the discontinuous layer 340 can have a characteristic size that falls within a particular range.

[0364] In some non-limiting examples, such characteristic size may be characterized by a characteristic length, which in some non-limiting examples may be considered as a maximum characteristic size value. In some non-limiting examples, such maximum may extend along a major axis of the grain structure 341. In some non-limiting examples, the major axis may be understood to be a first dimension extending in a plane defined by a plurality of transverse axes. In some non-limiting examples, a characteristic width may be identified as a characteristic size value of the grain structure 341, which may extend along a minor axis of the grain structure 341. In some non-limiting examples, the minor axis may be understood to be a second dimension extending in the same plane but substantially transverse to the major axis.

[0365] In some non-limiting examples, a characteristic length of at least one grain structure 341 along a first dimension may be less than or equal to a maximum threshold size.

[0366] In some non-limiting examples, a characteristic width of at least one grain structure 341 along the second dimension can be less than or equal to a maximum threshold size.

[0367] In some non-limiting examples, the size of the constituent particle structures 341 in (a portion of) the discontinuous layer 340 may be assessed by calculating and / or measuring characteristic dimensions of at least one such particle structure 341, including, but not limited to, mass, volume, diameter, length, perimeter, major axis, and / or minor axis.

[0368] In some non-limiting examples, one of at least one criteria by which such a discontinuous layer 340 may be evaluated may be its deposition density.

[0369] In some non-limiting examples, the characteristic size of the grain structure 341 may be compared to a maximum threshold size.

[0370] In some non-limiting examples, the deposition density of the grain structures 341 may be compared to a maximum threshold deposition density.

[0371] In some non-limiting examples, at least one of such criteria may be quantified by a numerical metric. In some non-limiting examples, such a metric may be a calculation of a dispersity Z> that describes the distribution of particle (domain) sizes in the deposited layer 430 of the particle structure 341.

[0372]

number

[0373]

number

[0374]

number

[0375]

number

[0376] Those skilled in the art will understand that dispersity is roughly analogous to polydispersity index (PDI), an average of which is roughly analogous to the concepts of number average molecular weight and weight average molecular weight familiar from organic chemistry, but which applies to the size (domain) as opposed to the molecular weight of the sample particle structure 341.

[0377] Those skilled in the art will also understand that the concept of dispersity may, in some non-limiting examples, be considered a three-dimensional volume concept, while in some non-limiting examples, the concept of dispersity may be considered a two-dimensional concept. Accordingly, the concept of dispersity may be used in connection with the observation and analysis of two-dimensional images of deposited layer 430, such as may be obtained by using various imaging techniques, including, but not limited to, at least one of TEM, AFM, and / or SEM. It is in this two-dimensional context that the above equations are defined.

[0378] In some non-limiting examples, the dispersity and / or number average of particle (area) size and the (area) size average of particle (area) size may include calculation of at least one of the number average of particle diameter and the (area) size average of particle diameter.

[0379]

number

[0380] In some non-limiting examples, the deposition material, including but not limited to the grain structure 341, of at least one deposition layer 430 may be deposited by a mask-free and / or open-mask deposition process.

[0381] In some non-limiting examples, particle structure 341 can have a substantially round shape. In some non-limiting examples, particle structure 341 can have a substantially spherical shape.

[0382] For simplicity, in some non-limiting examples, it may be assumed that the longitudinal extent of each grain structure 341 may be substantially the same (which, in any case, cannot be measured directly from a planar SEM image), such that the (area) size of the grain structures 341 may be expressed as a two-dimensional area coverage along a pair of horizontal axes. In this disclosure, references to (area) size may be understood to refer to such two-dimensional concepts, and may be distinguished from size (without the prefix "area"), which may be understood to refer to one-dimensional concepts, such as linear dimensions.

[0383] Indeed, some initial investigations suggest that, in some non-limiting examples, the longitudinal extent along the longitudinal axis of such grain structures 341 may tend to be small relative to the lateral extent (along at least one of the lateral axes), such that the volumetric contribution of that longitudinal extent may be less than or equal to the volumetric contribution of such lateral extent. In some non-limiting examples, this may be represented by an aspect ratio (ratio of longitudinal extent to lateral extent) that may be less than or equal to 1. In some non-limiting examples, such aspect ratio may be at least one of about 1:10, about 1:20, about 1:50, about 1:75, or about 1:300.

[0384] In this regard, the above assumption for representing the grain structure 341 as a two-dimensional area coverage (the longitudinal extent is substantially the same and can be neglected) may be appropriate.

[0385] Those skilled in the art will appreciate that, given the non-deterministic nature of the deposition process, there can be considerable variability with respect to the features and / or topology within the observation window, particularly considering the presence of defects and / or anomalies on the exposed layer surface 11 of the underlying material, including, but not limited to, step edges, chemical impurities, bond sites, kinks, and / or contaminants thereon, and the formation of grain structures 341 thereon, the non-uniformity of their coalescence as the deposition process continues, and uncertainty in the size and / or location of the observation window, as well as the complexities and variability inherent in calculating and / or measuring their characteristic size, spacing, deposition density, degree of aggregation, etc.

[0386] In this disclosure, for simplicity of explanation, certain details of the deposited material 731, including but not limited to the layer thickness profile and / or edge profile, have been omitted.

[0387] Those skilled in the art will understand that certain metal NPs, whether or not they are part of the discontinuous layer 340 of the deposited material 731, including, but not limited to, at least one particle structure 341, can exhibit surface plasmon (SP) excitations and / or coherent oscillations of free electrons, and as a result, such NPs may absorb and / or scatter light within the EM spectrum, including, but not limited to, the visible light spectrum and / or subranges thereof. Optical responses, including, but not limited to, the (sub)range of the EM spectrum in which absorption may be concentrated (absorption spectrum), the refractive index, and / or the extinction spectrum of such localized SP (LSP) excitations and / or coherent oscillations, can be tailored by varying the properties of such NPs, including, but not limited to, at least one of the following properties: characteristic size, size distribution, shape, surface coverage, composition, deposition density, degree of dispersion, and / or material and / or degree of aggregation of the nanostructure and / or its proximate medium.

[0388] Such optical response can include, for a photon-absorbing coating, absorption of photons incident thereon, thereby reducing reflection. In some non-limiting examples, the absorption can be focused in a range of the EM spectrum, including but not limited to the visible light spectrum, and / or subranges thereof. In some non-limiting examples, using a photon-absorbing layer as part of an optoelectronic device can reduce reliance on polarizers therein.

[0389] Fusella et al., "Plasmonic enhancement of stability and brightness in organic light-emitting devices," Nature 2020, 585, pp. 379–382 ("Fusella et al."), report that the stability of OLED devices can be enhanced by incorporating a NP-based outcoupling layer on top of the cathode layer to extract energy from plasmonic modes. The NP-based outcoupling layer was fabricated by spin-casting cubic Ag NPs onto the organic layer above the cathode. However, because most commercially available OLED devices are fabricated using vacuum-based processes, spin-casting from solution may not constitute an appropriate mechanism for forming such an NP-based outcoupling layer on top of the cathode.

[0390] It has been discovered that, in some non-limiting examples, such NP-based outcoupling layers over a cathode may be fabricated in vacuum (and thus may be suitable for use in commercial OLED manufacturing processes) by depositing metal deposition material 731 in a discontinuous layer 340 onto a patterned coating 610 that may be and / or be deposited on the cathode, in some non-limiting examples. Such a process may avoid the use of solvents or other wet chemicals that may cause damage to the OLED device and / or adversely affect device reliability.

[0391] In some non-limiting examples, the presence of such a discontinuous layer 340 of deposited material 731, including but not limited to at least one grain structure 341, may contribute to improved light extraction, performance, stability, reliability, and / or lifetime of the device.

[0392] In some non-limiting examples, the presence of at least one discontinuous layer 340 in the layered device 400 on and / or adjacent to the exposed layer surface 11 of the patterned coating 610 and / or in some non-limiting examples adjacent to the interface between such patterned coating 610 and at least one overlying layer may impart optical effects to photons and / or EM signals emitted by and / or transmitted through the device.

[0393] Those skilled in the art will appreciate that although a simplified model of the optical effects is presented herein, other models and / or explanations may be applicable.

[0394] In some non-limiting examples, the presence of such a discontinuous layer 340 of deposited material 731, including but not limited to at least one grain structure 341, can reduce and / or mitigate crystallization of thin film layers and / or coatings disposed adjacent to the longitudinal surfaces, including but not limited to, patterned coating 610 and / or at least one cladding layer, thereby stabilizing the properties of the thin film disposed adjacent thereto and, in some non-limiting examples, reducing scattering. In some non-limiting examples, such a thin film may be and / or may include at least one layer of a device outcoupling and / or encapsulation coating 1450, including but not limited to, a CPL.

[0395] In some non-limiting examples, the presence of such a discontinuous layer 340 of deposited material 731, including but not limited to at least one grain structure 341, can provide enhanced absorption in at least a portion of the UV spectrum. In some non-limiting examples, controlling the properties of such grain structures 341, including but not limited to at least one of the characteristic size, size distribution, shape, surface coverage, configuration, deposition density, dispersity, deposited material 731, and refractive index of the grain structures 341, can facilitate controlling the absorbance, wavelength range, and peak wavelength of the absorption spectrum, including the UV spectrum. Enhanced absorption of light in at least a portion of the UV spectrum can be advantageous, for example, to improve device performance, stability, reliability, and / or lifetime.

[0396] In some non-limiting examples, an optical effect can be described in terms of its effect on the transmission and / or absorption wavelength spectrum, including the wavelength range and / or its peak intensity.

[0397] Additionally, while the presented model may suggest specific effects on the transmission and / or absorption of photons passing through such discontinuous layers 340, in some non-limiting examples, such effects may reflect local effects that may not be reflected on a broad, observable basis.

[0398] optoelectronic devices 10 is a simplified block diagram from a cross section of an exemplary optoelectronic device 1000 according to the present disclosure. In some non-limiting examples, device 1000 is an OLED.

[0399] The device 1000 may include a substrate 10 on which is disposed a front plane 1010, a first electrode 1020, at least one semiconductor layer 1030, and a second electrode 1040, each of which includes multiple layers. In some non-limiting examples, the front plane 1010 can provide a mechanism for photon emission and / or manipulation of emitted photons.

[0400] In some non-limiting examples, the deposited layer 430 and the underlayer 130 together can form at least a portion of at least one of the first electrode 1020 and the second electrode 1040 of the device 800. In some non-limiting examples, the deposited layer 430 and the underlying underlayer 130 together may form at least a portion of the cathode of the device 1000.

[0401] In some non-limiting examples, device 1000 can be electrically coupled to a power source 1005. When so coupled, device 1000 can emit photons as described herein.

[0402] substrate In some examples, the substrate 10 can include a base substrate 1012. In some examples, the base substrate 1012 can be formed from any suitable material, including, but not limited to, inorganic materials, including silicon (Si), glass, metals (including, but not limited to, metal foils), sapphire, and / or other inorganic materials, and / or organic materials, including, but not limited to, polymers, including polyimides, and / or silicon-based polymers. In some examples, the base substrate 1012 can be rigid or flexible. In some examples, the substrate 10 can be defined by at least one planar surface. In some non-limiting examples, the substrate 10 can have at least one surface that supports the remaining front plane 1010 components of the device 1000, including, but not limited to, a first electrode 1020, at least one semiconductor layer 1030, and / or a second electrode 1040.

[0403] In some non-limiting examples, such surfaces may be organic and / or inorganic surfaces.

[0404] In some examples, the substrate 10 may include, in addition to the base substrate 1012, at least one additional organic and / or inorganic layer (not shown, nor specifically described herein) supported on the exposed layer surface 11 of the base substrate 1012.

[0405] In some non-limiting examples, such additional layers can include and / or form at least one organic layer that can include, replace, and / or supplement at least one of the at least one semiconductor layer 1030.

[0406] In some non-limiting examples, such additional layer can include at least one inorganic layer that can include and / or form at least one electrode, which can include, replace, and / or supplement the first electrode 1020 and / or the second electrode 1040, in some non-limiting examples.

[0407] In some non-limiting examples, such additional layers may comprise and / or be formed from and / or be formed as backplane 1015. In some non-limiting examples, backplane 1015 may include power circuitry and / or switching elements for driving device 1000, including, but not limited to, electronic TFT structure 1101 ( FIG. 11 ) and / or components thereof, which may not be provided in a low-pressure (including but not limited to, a vacuum) environment and / or may be formed by a photolithography process that may precede the introduction of a low-pressure (including but not limited to, a vacuum) environment.

[0408] Backplane and TFT structure embodied therein In some non-limiting examples, the backplane 1015 of the substrate 10 may comprise at least one electronic and / or optoelectronic component, including but not limited to, a transistor, a resistor, and / or a capacitor, that may support the device 1000 functioning as an active matrix device and / or a passive matrix device. In some non-limiting examples, such a structure may be a thin film transistor (TFT) structure 1101.

[0409] Non-limiting examples of TFT structures 1101 include top-gate, bottom-gate, n-type and / or p-type TFT structures 1101. In some non-limiting examples, the TFT structures 1101 may incorporate any at least one of amorphous Si (a-Si), indium gallium zinc (Zn) oxide (IGZO), and / or low temperature polycrystalline Si (LTPS).

[0410] First electrode A first electrode 1020 may be deposited on the substrate 10. In some non-limiting examples, the first electrode 1020 may be electrically coupled to a terminal of the power source 1005 and / or to ground. In some non-limiting examples, the first electrode 1020 may be so coupled via at least one drive circuit, which in some non-limiting examples may incorporate at least one TFT structure 1101 within the backplane 1015 of the substrate 10.

[0411] In some non-limiting examples, the first electrode 1020 can include an anode and / or a cathode. In some non-limiting examples, the first electrode 1020 can be an anode.

[0412] In some non-limiting examples, the first electrode 1020 can be formed by depositing at least one thin conductive film on (a portion of) the substrate 10. In some non-limiting examples, a plurality of first electrodes 1020 can be formed on (a portion of) the substrate 10. Horizontal In some non-limiting examples, at least one of such at least one first electrode 1020 may be arranged in a spatial arrangement Horizontal 11. In that case, in some non-limiting examples, at least one of such at least one first electrode 1020 may extend through an opening in the TFT insulating layer 1109 so as to be electrically coupled to an electrode of a corresponding TFT structure 1101 in the backplane 1015.

[0413] In some non-limiting examples, the at least one first electrode 1020 and / or its at least one thin film may comprise a variety of materials, including but not limited to, at least one metallic material including at least one of Mg, Al, calcium (Ca), Zn, Ag, Cd, Ba, or Yb, or any combinations thereof, including but not limited to, alloys containing any of such materials; at least one metal oxide including but not limited to, transparent conductive oxides (TCOs), including ternary compositions such as fluorine tin oxide (FTO), indium zinc oxide (IZO), or indium tin oxide (ITO); or any combinations thereof, or various ratios thereof, or any combinations thereof in at least one layer, at least one of which may be a thin film, including but not limited to,

[0414] Second electrode A second electrode 1040 may be deposited on the at least one semiconductor layer 1030 . In some non-limiting examples, the second electrode 1040 may be electrically coupled to a terminal of the power source 1005 and / or ground. In some non-limiting examples, the second electrode 1040 may be so coupled via at least one drive circuit, which in some non-limiting examples may incorporate at least one TFT structure 1101 within the backplane 1015 of the substrate 10.

[0415] In some non-limiting examples, the second electrode 1040 can include an anode and / or a cathode, hi some non-limiting examples, the second electrode 1040 can be a cathode.

[0416] In some non-limiting examples, the second electrode 1040 may be formed by depositing the deposition layer 430 as at least one thin film on, in some non-limiting examples, (a portion of) at least one semiconductor layer 1030. HorizontalThere may be a plurality of second electrodes 1040 arranged in a spatial arrangement across the

[0417] In some non-limiting examples, the at least one second electrode 1040 may comprise a variety of materials, including, but not limited to, at least one metallic material, including at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, or Yb, or any combination thereof, including, but not limited to, alloys containing any of such materials; at least one metal oxide, including, but not limited to, TCO, including ternary compositions such as FTO, IZO, or ITO; or any combination thereof, or various ratios thereof; or zinc oxide (ZnO), or indium (In), or other oxides containing Zn; or any combination thereof, including, but not limited to, at least one layer, at least one of which may be a thin conductive film; and / or at least one non-metallic material. In some non-limiting examples, for Mg:Ag alloys, such alloy compositions may range from about 1:9 to 9:1 by volume.

[0418] In some non-limiting examples, deposition of the second electrode 1040 may be performed using an open mask and / or a mask-free deposition process.

[0419] In some non-limiting examples, the second electrode 1040 can include multiple such layers and / or coatings, which, in some non-limiting examples, can be separate layers and / or coatings disposed on top of each other.

[0420] In some non-limiting examples, the second electrode 1040 can include a Yb / Ag bilayer coating. By way of non-limiting example, such a bilayer coating can be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of such an Ag coating can exceed the thickness of the Yb coating.

[0421] In some non-limiting examples, the second electrode 1040 may be a multi-layer electrode 1040 including at least one metal layer and / or at least one oxide layer.

[0422] In some non-limiting examples, the second electrode 1040 can include fullerenes and Mg.

[0423] As a non-limiting example, such a coating may be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, fullerenes can be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in U.S. Patent Application Publication No. 2015 / 0287846, published October 8, 2015, and / or International Application No. PCT / IB2017 / 054970, filed August 15, 2017, and published February 22, 2018 as WO 2018 / 033860.

[0424] Semiconductor layer In some non-limiting examples, the at least one semiconductor layer 1030 can include multiple layers 1031, 1033, 1035, 1037, 1039, any of which can be arranged in a stacked configuration, in some non-limiting examples, in a thin film, and the stacked configuration can include, but is not limited to, at least one of a hole injection layer (HIL) 1031, a hole transport layer (HTL) 1033, an emissive layer (EML) 1035, an ETL 1037, and / or an EIL 1039.

[0425] In some non-limiting examples, at least one semiconductor layer 1030 may form a "tandem" structure that includes multiple EMLs 1035. In some non-limiting examples, such a tandem structure may also include at least one charge generation layer (CGL).

[0426] Those skilled in the art will readily appreciate that the structure of device 1000 may be modified by omitting and / or combining at least one of semiconductor layers 1031, 1033, 1035, 1037, 1039.

[0427] Additionally, any of the layers 1031, 1033, 1035, 1037, 1039 of the at least one semiconductor layer 1030 can include any number of sublayers. Furthermore, any of such layers 1031, 1033, 1035, 1037, 1039, and / or their sublayers can include various mixtures and / or compositional gradients. Furthermore, those skilled in the art will appreciate that the device 1000 can include at least one layer that includes inorganic and / or organometallic materials, and is not necessarily limited to devices comprised solely of organic materials. As a non-limiting example, the device 1000 can include at least one QD.

[0428] In some non-limiting examples, the HIL 1031 can be formed using a hole-injecting material that can facilitate the injection of holes by the anode.

[0429] In some non-limiting examples, HTL 1033 can be formed using a hole transport material, which in some non-limiting examples can exhibit high hole mobility.

[0430] In some non-limiting examples, the ETL 1037 may be formed using an electron transporting material, which, in some non-limiting examples, may exhibit high electron mobility.

[0431] In some non-limiting examples, the EIL 1039 can be formed using an electron injection material that can facilitate injection of electrons by the cathode.

[0432] In some non-limiting examples, the EML 1035 may be formed by doping a host material with at least one emitter material, for example, a fluorescent emitter, a phosphorescent emitter, a thermally activated delayed fluorescence (TADF) emitter, and / or any combination of two or more thereof.

[0433] In some non-limiting examples, the device 1000 may be an OLED in which at least one semiconductor layer 1030 includes at least one EML 1035 interposed between conductive thin-film electrodes 1020, 1040, so that when a potential difference is applied across them, holes can be injected into the at least one semiconductor layer 1030 through the anode and electrons can be injected into the at least one semiconductor layer 1030 through the cathode, migrate toward the EML 1035, combine and emit EM radiation in the form of photons.

[0434] In some non-limiting examples, device 1000 may be an electroluminescent QD device that may include an active layer that includes at least one QD, at least one semiconductor layer 1030. When a current may be supplied by a power source 1005 to first electrode 1020 and second electrode 1040, photons may be emitted from the active layer that includes at least one semiconductor layer 1030 therebetween.

[0435] Those skilled in the art will readily appreciate that the structure of device 1000 can be modified by introducing at least one additional layer (not shown) at an appropriate location within at least one semiconductor layer 1030 stack, including, but not limited to, a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), an additional charge transport layer (CTL) (not shown), and / or an additional charge injection layer (CIL) (not shown).

[0436] In some non-limiting examples, including when OLED device 1000 comprises a lighting panel, Horizontal 10 may correspond to a single light emitting element. Thus, the substantially flat cross-sectional profile shown in FIG. 10 may be a cross-sectional view of device 1000 such that EM radiation is emitted from device 1000 along substantially the entire lateral extent of the device. Horizontal In some non-limiting examples, such a single light-emitting element may be driven by a single drive circuit of device 1000.

[0437] In some non-limiting examples, including when OLED device 1000 comprises a display module, Horizontal may be subdivided into a plurality of emission regions 1610 (FIG. 16) of the device 1000, where a cross section of the device structure 1000 within each of the emission regions 1610 shown without limitation in FIG. 16 may emit EM radiation therefrom when energized.

[0438] emission area In some non-limiting examples, such as may be shown as non-limiting examples in FIG. 11 , the active area 1130 of the emission region 1610 is bounded in cross section by the first electrode 1020 and the second electrode 1040, and the emission region 1610 defined by the first electrode 1020 and the second electrode 1040 Horizontal Those skilled in the art will appreciate that the lateral extent of the emission region 1610, and therefore the lateral boundaries of the active region 1130, may be defined by the distance between either or both of the first electrode 1020 and the second electrode 1040. Horizontal It will be appreciated that the lateral extent of the emission region 1610 need not correspond entirely to the lateral extent of either the first electrode 1020 or the second electrode 1040. As non-limiting examples, a portion of the first electrode 1020 may be covered by the pixel defining layer PDL 1140 (FIG. 11), and / or a portion of the second electrode 1040 may not be disposed on the at least one semiconductor layer 1030, such that in either or both scenarios, the emission area 1610 may be laterally constrained.

[0439] In some non-limiting examples, the individual emission regions 1610 of the device 1000 may be laid out in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which, in some non-limiting examples, may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have several elements within such a pattern, with each element characterized by at least one feature including, but not limited to, the wavelength of light emitted by that emission region 1610, the shape of such emission region 1610, its dimensions (along either or both of the first and / or second lateral directions), its orientation (with respect to either or both of the first and / or second lateral directions), and / or its spacing (with respect to either or both of the first and / or second lateral directions) from the previous element in the pattern. In some non-limiting examples, the pattern may be repeated in either or both of the first and / or second lateral directions.

[0440] In some non-limiting examples, each individual emission region 1610 of device 1000 may be associated with and driven by corresponding drive circuitry in the backplane 1015 of device 1000 to drive the OLED structure for the associated emission region 1610. In some non-limiting examples, including but not limited to, where the emission regions 1610 may be laid out in a regular pattern extending in both a first (row) horizontal direction and a second (column) horizontal direction, there may be a signal line in the backplane 1015 corresponding to each row of emission regions 1610 extending in the first horizontal direction, and a signal line corresponding to each column of emission regions 1610 extending in the second horizontal direction. In such a non-limiting configuration, a signal on a row select line / data line pair can energize the gate of each of the switching TFTs 1101 electrically coupled thereto, and a signal on the data line can energize the source of each of the switching TFTs 1101 electrically coupled thereto, such that the signal on the row select line / data line pair can electrically couple and energize the anode of the OLED structure of the emission region 1610 associated with such pair by the positive terminal of the power source 1005 to emit photons therefrom, the cathode of which is electrically coupled to the negative terminal of the power source 1005.

[0441] In some non-limiting examples, each emissive region 1610 of device 1000 may correspond to a single display pixel 2210 (FIG. 22A). In some non-limiting examples, each pixel 2210 may emit light at a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum may correspond to, but is not limited to, a color within the visible light spectrum.

[0442] In some non-limiting examples, each emissive region 1610 of device 1000 may correspond to a subpixel 2210x (FIG. 17A) of display pixel 174. In some non-limiting examples, multiple subpixels 174x may be combined to form or represent a single display pixel 2210.

[0443] In some non-limiting examples, a single display pixel 2210 may be represented by three subpixels 174x. In some non-limiting examples, the three subpixels 174x may be referred to as an R (red) subpixel 1741, a G (green) subpixel 1742, and / or a B (blue) subpixel 1743, respectively. In some non-limiting examples, a single display pixel 2210 may be represented by four subpixels 174x, where three of such subpixels 174x may be referred to as an R (red), G (green), and B (blue) subpixel 174x, and the fourth subpixel 174x may be referred to as a W (white) subpixel 174x. In some non-limiting examples, the emission spectrum of EM radiation emitted by a given subpixel 174x can correspond to the color the subpixel 174x is referred to as. In some non-limiting examples, the wavelength of the EM radiation may not correspond to such a color, but further processing may be performed in a manner apparent to one skilled in the art to convert the wavelength to one that does correspond.

[0444] Because the wavelengths of the different colored subpixels 174x may be different, the optical properties of such subpixels 174x may be different, particularly when common electrodes 1020, 1040 having a substantially uniform thickness profile may be used for the different colored subpixels 174x.

[0445] While a common electrode 1020, 1040 having a substantially uniform thickness may be provided as the second electrode 1040 in the device 800, the optical performance of the device 800 may not be easily fine-tuned according to the emission spectrum associated with each (sub)pixel 2210 / 174x. The second electrode 1040 used in such an OLED device 1000 may, in some non-limiting examples, be a common electrode 1020, 1040 coating multiple (sub)pixels 2210 / 174x. As a non-limiting example, such a common electrode 1020, 1040 may be a relatively thin conductive film having a substantially uniform thickness across the device 1000. In some non-limiting examples, efforts have been made to tailor the optical microcavity effect associated with each (sub)pixel 2210 / 174x color by varying the thickness of organic layers disposed within different (sub)pixels 2210 / 174x; such an approach may, in some non-limiting examples, at least in some cases, provide a significant degree of tuning of the optical microcavity effect. Additionally, in some non-limiting examples, such an approach may be difficult to implement in an OLED display manufacturing environment.

[0446] As a result, in some non-limiting examples, the presence of optical interfaces created by multiple thin film layers and coatings with different refractive indices, such as may be used to construct optoelectronic devices, including but not limited to OLED device 1000, can create different optical microcavity effects for different color subpixels 174x.

[0447] Some factors that may affect the microcavity effect observed in device 1000 include, but are not limited to, the total path length (which in some non-limiting examples may correspond to the total thickness (of the longitudinal surface) of device 1000 through which EM radiation emitted from device 1000 passes before being outcoupled), and the refractive indices of the various layers and coatings.

[0448] In some non-limiting examples, the emission area 1610 of (sub)pixel 2210 / 174x Horizontal Inside and Horizontal Adjusting the thickness of the electrodes 1020, 1040 over the entire optical path can affect the observable microcavity effect. In some non-limiting examples, such an effect can be attributed to a change in the total optical path length.

[0449] In some non-limiting examples, varying the thickness of the electrodes 1020, 1040 may also, in some non-limiting examples, vary the refractive index of light passing therethrough, in addition to varying the overall optical path length, which may be particularly the case when the electrodes 1020, 1040 may be formed from at least one deposited layer 430.

[0450] In some non-limiting examples, the optical properties of device 1000 and / or the emissive region 1610 of (sub)pixel 2210 / 174x can be varied by adjusting at least one optical microcavity effect. Horizontal The optical properties over a range may include, but are not limited to, the angular distribution of the emitted EM radiation, including, but not limited to, the emission spectrum, the intensity (including, but not limited to, luminous intensity), and / or the angular dependence of brightness, and / or the color shift of the emitted light.

[0451] In some non-limiting examples, a subpixel 174x may be associated with a first set of other subpixels 174x to represent a first display pixel 2210, and may also be associated with a second set of other subpixels 174x to represent a second display pixel 2210, such that the first and second display pixels 2210 can have the same subpixel 174x associated with them.

[0452] The pattern and / or organization of subpixels 174x into display pixels 2210 continues to evolve, and all current and future patterns and / or organizations are considered to be within the scope of this disclosure.

[0453] Non-emission area In some non-limiting examples, the various emissive regions 1610 of the device 1000 may be substantially surrounded and separated in at least one lateral direction by at least one non-emissive region 1620 (FIG. 16), where the structure and / or configuration along a cross section of the device structure 1000, as shown but not limited to in FIG. 10, may vary to substantially suppress photons emitted therefrom. In some non-limiting examples, the non-emissive region 1620 may be substantially free of the emissive region 1610. Horizontal These regions can include:

[0454] Thus, as shown in the cross-sectional view of FIG. 11 , the lateral topology of various layers of the at least one semiconductor layer 1030 can be varied to define at least one emitting region 1610 surrounded (in at least one lateral direction) by at least one non-emitting region 1620.

[0455] In some non-limiting examples, the emission area 1610 corresponding to a single display (sub)pixel 2210 / 174x may be: Horizontal 1110, surrounded in at least one direction by at least one non-emitting region 1620. Horizontal 1120.

[0456] We now describe non-limiting examples of implementations of the cross section of device 1000 as applied to an emission region 1610 corresponding to a single display (sub)pixel 2210 / 174x of OLED display 1000. While features of such implementations are shown as being specific to emission region 1610, those skilled in the art will understand that in some non-limiting examples, two or more emission regions 1610 may include common features.

[0457] In some non-limiting examples, the first electrode 1020 may be disposed on the exposed layer surface 11 of the device 1000, and in some non-limiting examples, the first electrode 1020 may be disposed on the exposed layer surface 11 of the emission region 1610. HorizontalIn some non-limiting examples, the light emitting element 1110 may be disposed within at least a portion of the emissive area 1610 of at least (sub)pixel 2210 / 174x. Horizontal Within 1110, the exposed layer surface 11 can include a TFT insulating layer 1109 of various TFT structures 1101 that, upon deposition of the first electrode 1020, constitute the drive circuitry for the emission area 1610 corresponding to a single display (sub)pixel 2210 / 174x.

[0458] In some non-limiting examples, the TFT insulating layer 1109 may be formed with an opening extending therethrough to allow the first electrode 1020 to be electrically coupled to one of the TFT electrodes 1105, 1107, 1108, including, but not limited to, the TFT drain electrode 1108, as shown in FIG. 11 .

[0459] Those skilled in the art will understand that the driving circuit comprises multiple TFT structures 1101 . In FIG. 11, for ease of explanation, only one TFT structure 1101 may be shown, but those skilled in the art will understand that such TFT structure 1101 may represent multiple such TFT structures with driving circuitry.

[0460] In cross section, the configuration of each emitting region 1610 may, in some non-limiting examples, include at least one PDL 1140 surrounded by a non-emitting region 1620. Horizontal 1120. In some non-limiting examples, the PDL 1140 can include insulating organic and / or inorganic materials.

[0461] In some non-limiting examples, the PDL 1140 may be deposited substantially over the TFT insulating layer 1109, however, as shown, in some non-limiting examples, the PDL 1140 may extend over at least a portion of the deposited first electrode 1020 and / or its outer edge.

[0462] In some non-limiting examples, as shown in FIG. 11, the cross-sectional thickness and / or profile of the PDL 1140 may be adjusted to the thickness and / or profile of the surrounding non-emitting region 1620. Horizontal 1120 and the enclosed emission area 1610 corresponding to (sub)pixel 2210 / 174x. Horizontal The region of increased thickness along the boundary with 1110 may give the emissive region 1610 of each (sub)pixel 2210 / 174x a substantially valley-shaped configuration.

[0463] In some non-limiting examples, the profile of the PDL 1140 may be, in some non-limiting examples, Horizontal 1120, substantially well within the surrounding non-emitting region 1620. Horizontal 1120 and the enclosed emission area 1610 Horizontal 1110. The valley feature may have a reduced thickness over such valley feature, including but not limited to away from the boundary between 1110.

[0464] While the PDL 1140 is generally shown as having a linearly sloping surface, thereby forming a valley-shaped configuration that defines an enclosed emission region 1610, one skilled in the art will understand that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and / or configuration of such a PDL 1140 may be varied. As a non-limiting example, the PDL 1140 may be formed with more steeply or more gently sloping portions. In some non-limiting examples, such a PDL 1140 may be configured to extend substantially vertically away from the surface on which it is deposited, and the surface may cover at least one edge of the first electrode 1020. In some non-limiting examples, such a PDL 1140 may be configured to have at least one semiconductor layer 1030 deposited thereon by solution processing techniques, including but not limited to, by printing, including but not limited to, inkjet printing.

[0465] In some non-limiting examples, at least one semiconductor layer 1030 may be Horizontal 1110. In some non-limiting examples, at least part of the emissive region 1610 of (sub)pixel 2210 / 174x may be deposited on the exposed layer surface 11 of device 1000. Horizontal Within 1110, such exposed layer surface 11 may include first electrode 1020 upon deposition of at least one semiconductor layer 1030 (and / or its layers 1031, 1033, 1035, 1037, 1039).

[0466] In some non-limiting examples, at least one semiconductor layer 1030 may be Horizontal 1110 and at least partially surrounding non-emitting region 1620 Horizontal 1120. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emitting region 1620 may include PDL 1140 upon deposition of at least one semiconductor layer 1030.

[0467] In some non-limiting examples, the second electrode 1040 may be Horizontal 1110. In some non-limiting examples, at least part of the emissive region 1610 of (sub)pixel 2210 / 174x may be disposed on the exposed layer surface 11 of device 1000. Horizontal Within 1110, such exposed layer surface 11 may include at least one semiconductor layer 1030 upon deposition of the second electrode 1020.

[0468] In some non-limiting examples, the second electrode 1040 also Horizontal 1110 and at least partially surrounding non-emitting region 1620 Horizontal1120. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissive region 1620 may include PDL 1140 upon deposition of second electrode 1040.

[0469] In some non-limiting examples, the second electrode 1040 may be Horizontal 1120。 1120 may extend through substantially all or a substantial portion of.

[0470] Selective deposition of patterned electrodes In some non-limiting examples, the ability to achieve selective deposition of deposition material 731 in an open mask and / or mask-free deposition process with prior selective deposition of patterned coating 610 can be used to achieve selective deposition of patterned electrodes 1020, 1040, 1550 and / or at least one layer thereof of an optoelectronic device, including but not limited to OLED device 1000 and / or conductive elements electrically coupled thereto.

[0471] In this manner, selective deposition of patterned coating 610, such as patterned coating 610 in FIG. 4 using a shadow mask 615, and open mask and / or mask-free deposition of deposition material 731 can be combined to selectively deposit at least one deposition layer 430 to form device features, including but not limited to, patterned electrodes 1020, 1040, 1550, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto, in device 700a shown in FIG. 7, without using a shadow mask 615 in the deposition process to form deposition layer 430. In some non-limiting examples, such patterning can be performed to form device 700a. a This may enable and / or enhance the transmittance of

[0472] Some non-limiting examples of such patterned electrodes 1020, 1040, 1550, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto, to provide such device 1000 with various structural and / or performance capabilities are described herein.

[0473] As a result of the above, the emission area 1610 of (sub)pixel 2210 / 174x Horizontal 1110, and / or the non-emitting region 1620 surrounding the emitting region 1610. Horizontal 1120, the goal may be to selectively deposit device features, including but not limited to, at least one of the first electrode 1020, the second electrode 1040, the auxiliary electrode 1550 ( FIG. 15 ), and / or conductive elements electrically coupled thereto, in a pattern onto the exposed layer surface 11 of the front plane 1010 of the device 1000. In some non-limiting examples, the first electrode 1020, the second electrode 1040, and / or the auxiliary electrode 1550 may be deposited in at least one of the plurality of deposition layers 430.

[0474] 12 may show an exemplary patterned electrode 1200 in plan view, in which the second electrode 1040 is suitable for use in an exemplary version 1300 of device 1000 (FIG. 13). Electrode 1200 may be formed with a pattern 1210 that includes a single continuous structure having or defining a plurality of patterned openings 1220 therein, which may correspond to areas of device 1200 where no cathode is present.

[0475] In the figure, by way of non-limiting example, pattern 1210 is the emission area 1610 corresponding to (sub)pixel 2210 / 174x. Horizontal 1110 and a non-emitting region 1620 surrounding such an emitting region 1610. Horizontal1120 may be disposed throughout the lateral extent of device 1000. Thus, the illustrated example may correspond to device 1300 that may be substantially transparent to light incident on its external surfaces such that a substantial portion of such external incident light may be transmitted through device 1300 in addition to photon emission (top-emission, bottom-emission, and / or dual-sided emission) generated internally within device 1300, as disclosed herein.

[0476] The transmittance of device 1300 can be adjusted and / or modified by varying the pattern 1210 used, including but not limited to the average size of openings 1220 and / or the spacing and / or density of openings 1220.

[0477] 13, there can be seen a cross-sectional view of a device 1300 taken along line 13-13 of FIG. 12. In the figure, the device 1300 can be seen as comprising a substrate 10, a first electrode 1020, and at least one semiconductor layer 1030.

[0478] Patterned coating 610 may be selectively deposited in a pattern that substantially corresponds to pattern 1210 on exposed layer surface 11 of underlayer 130 .

[0479] A deposition layer 430 suitable for forming a patterned electrode 1200, illustrated as second electrode 1040, can be disposed over substantially all of the exposed layer surface 11 of underlayer 130 using open-mask and / or mask-free deposition processes. Underlayer 130 can include both areas of patterned coating 610 disposed in pattern 1210 and areas of at least one semiconductor layer 1030 in pattern 1210 where patterned coating 610 is not deposited. In some non-limiting examples, the area of ​​patterned coating 610 can substantially correspond to first portion 601 including opening 1220 shown in pattern 1210.

[0480] Due to the nucleation-inhibiting properties of the areas of the pattern 1210 where the patterned coating 610 is disposed (corresponding to the openings 1220), the deposition material 731 disposed on such areas may tend not to remain, resulting in a pattern of selective deposition of the deposition layer 430 that may substantially correspond to the remainder of the pattern 1210, with the areas of the first portion 601 of the pattern 1210 corresponding to the openings 1220 remaining substantially free of the closed coating 440 of the deposition layer 430.

[0481] In other words, the cathode-forming deposition layer 430 can be selectively deposited substantially only on the second portion 602, which includes at least one area of ​​the semiconductor layer 1030 that surrounds but does not occupy the opening 1220 in the pattern 1210.

[0482] FIG. 14A may show a schematic diagram showing multiple patterns 1410, 1420 of electrodes 1020, 1040, 1550 in a plan view.

[0483] In some non-limiting examples, the first pattern 1410 may include a plurality of elongated, spaced apart regions extending in a first laterally direction. In some non-limiting examples, the first pattern 1410 may include a plurality of first electrodes 1020. In some non-limiting examples, the multiple regions comprising the first pattern 1410 may be electrically coupled.

[0484] In some non-limiting examples, the second pattern 1420 may include a plurality of elongated, spaced apart regions extending in a second lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the second pattern 1420 may include a plurality of second electrodes 1040. In some non-limiting examples, the multiple regions comprising the second pattern 1420 may be electrically coupled.

[0485] In some non-limiting examples, the first pattern 1410 and the second pattern 1420 may form part of an exemplary version of the device 1000 shown generally at 1400 .

[0486] In some non-limiting examples, the emission area 1610 corresponding to (sub)pixel 2210 / 174x Horizontal 1110 may be formed where the first pattern 1410 overlaps the second pattern 1420. In some non-limiting examples, the non-emitting region 1620 Horizontal 1120 is Horizontal Any other than 1110 Horizontal It may correspond to.

[0487] In some non-limiting examples, a first terminal of the power source 1005, which in some non-limiting examples may be a positive terminal, may be electrically coupled to at least one electrode 1020, 1040, 1550 of the first pattern 1410. In some non-limiting examples, the first terminal may be coupled to at least one electrode 1020, 1040, 1550 of the first pattern 1410 via at least one drive circuit. In some non-limiting examples, a second terminal of the power source 1005, which in some non-limiting examples may be a negative terminal, may be electrically coupled to at least one electrode 1020, 1040, 1550 of the second pattern 1420. In some non-limiting examples, the second terminal may be coupled to at least one electrode 1020, 1040, 1550 of the second pattern 1420 via at least one drive circuit.

[0488] 14B, there can be seen a cross-sectional view of the device 1400 at a deposition stage 1400b taken along line 14B-14B of FIG. 14A. In the figure, the device 1400 at stage 1400b can be seen to comprise a substrate 10.

[0489] The patterned coating 610 may be selectively disposed in a pattern that substantially corresponds to the inverse of the first pattern 1410 on the exposed layer surface 11 of the underlayer 130, which may be the substrate 10 as shown.

[0490] A deposition layer 430 suitable for forming a first pattern 1410 of electrodes 1020, 1040, 1550, illustrated as first electrode 1020, can be disposed over substantially all of the exposed layer surface 11 of underlayer 130 using open-mask and / or mask-free deposition processes. Underlayer 130 can include both areas of patterned coating 610 disposed inversely of first pattern 1410 and areas of substrate 10 disposed in first pattern 1410 where no patterned coating 610 has been deposited. In some non-limiting examples, the areas of substrate 10 can substantially correspond to the elongated, spaced-apart areas of first pattern 1410, and the areas of patterned coating 610 can substantially correspond to first portions 601, including gaps therebetween.

[0491] Due to the nucleation-inhibiting properties of those areas of the first pattern 1410 where the patterned coating 440 is disposed (corresponding to the gaps therebetween), the deposition layer 430 disposed on such areas may tend not to remain, resulting in a pattern of selective deposition of the deposition layer 430, which may substantially correspond to the elongated, spaced apart areas of the first pattern 1410, leaving the first portion 601, including gaps therebetween, substantially free of the closed coating 610 of the deposition layer 430.

[0492] In other words, the deposition layer 430 that can form the first pattern 1410 of electrodes 1020, 1040, 1550 can be selectively deposited substantially only on the second portion 602 that includes areas of the substrate 10 that define the elongated, spaced apart areas of the first pattern 1410.

[0493] 14C, there can be seen a cross-sectional view 1400c of device 1400 taken along line 14C-14C of FIG. 14A. In the figure, device 1400 can be seen to include substrate 10, a first pattern 1410 of electrodes 1020 deposited as shown in FIG. 14B, and at least one semiconductor layer 1030.

[0494] In some non-limiting examples, at least one semiconductor layer 1030 may be Horizontal It may be provided as a common layer across substantially all of the

[0495] The patterned coating 610 may be selectively disposed in a pattern that substantially corresponds to the second pattern 1420 on the exposed layer surface 11 of the underlying layer 130, which is at least one semiconductor layer 1030, as shown.

[0496] A deposition layer 430 suitable for forming the second pattern 1420 of electrodes 1020, 1040, 1550, illustrated as second electrode 1040, can be disposed over substantially all of the exposed layer surface 11 of the underlayer 130 using open-mask and / or mask-free deposition processes. The underlayer 130 can include both areas of the patterned coating 610 disposed inversely of the second pattern 1420 and areas of the at least one semiconductor layer 1030 within the second pattern 1420 where no patterned coating 610 has been deposited. In some non-limiting examples, the areas of the at least one semiconductor layer 1030 can substantially correspond to the first portion 601 including the elongated, spaced apart areas of the second pattern 1420, and the areas of the patterned coating 610 can substantially correspond to the gaps therebetween.

[0497] Due to the nucleation-inhibiting properties of those areas of the second pattern 1420 where the patterned coating 440 is disposed (corresponding to the gaps therebetween), the deposition layer 430 disposed on such areas may tend not to remain, resulting in a pattern of selective deposition of the deposition layer 430, which may substantially correspond to the elongated, spaced apart areas of the second pattern 1420, leaving the first portion 601, including gaps therebetween, substantially free of the closed coating 610 of the deposition layer 430.

[0498] In other words, the deposition layer 430 that may form the second pattern 1420 of the electrodes 1020, 1040, 1550 may be selectively deposited substantially only on the second portion 602 that includes the areas of the NPC 920 that define the elongated, spaced apart areas of the second pattern 1420.

[0499] In some non-limiting examples, the average thickness of the patterned coating 610 and the deposition layer 430 subsequently deposited to form either or both of the first pattern 1410 and / or second pattern 1420 of the electrodes 1020, 1040, 1550 can be varied according to various parameters, including, but not limited to, a given application and given performance characteristics. In some non-limiting examples, the average thickness of the patterned coating 610 can be comparable to and / or substantially less than the average thickness of the subsequently deposited deposition layer 430. The use of a relatively thin patterned coating 610 to achieve selective patterning of the subsequently deposited deposition layer 430 can be suitable for providing a flexible device 1000. In some non-limiting examples, the relatively thin patterned coating 610 can provide a relatively flat surface upon which the barrier coating 1450 can be deposited. In some non-limiting examples, providing such a relatively flat surface for application of the barrier coating 1450 can enhance adhesion of the barrier coating 1450 to such a surface.

[0500] At least one of the first patterns 1410 of the electrodes 1020, 1040, 1550 and at least one of the second patterns 1420 of the electrodes 1020, 1040, 1550 are arranged in the emissive area 1610 corresponding to the (sub)pixel 2210 / 174x. Horizontal To control photon emission from 1110, it may be electrically coupled to a power source 1005 directly and / or, in some non-limiting examples, via a respective drive circuit.

[0501] Auxiliary electrode Those skilled in the art will understand that the process for forming the second electrode 1040 in the second pattern 1420 shown in Figures 14A-14C can be used in a similar manner, in some non-limiting examples, to form the auxiliary electrode 1550 for the device 1000. In some non-limiting examples, that second electrode 1040 may comprise a common electrode, and the auxiliary electrode 1550 may be deposited in the second pattern 1420, in some non-limiting examples, above or, in some non-limiting examples, below the second electrode 1040, and electrically coupled to the second electrode. In some non-limiting examples, the second pattern 1420 for such auxiliary electrode 1550 may be formed such that elongated, spaced apart regions of the second pattern 1420 overlap the emission regions 1610 corresponding to the (sub)pixels 2210 / 174x. Horizontal The non-emitting region 1620 surrounding 1110 Horizontal 1120. In some non-limiting examples, the second pattern 1420 for such auxiliary electrodes 1550 may be such that the elongated spaced apart regions of the second pattern 1420 are substantially located within the emission region 1610 corresponding to the (sub)pixel 2210 / 174x. Horizontal 1110, and / or the surrounding non-emitting region 1620. Horizontal It may be something like that in 1120.

[0502] FIG. 15 may show an example cross-sectional view of an example version 1500 of device 1000 that is substantially similar thereto, but may further include at least one auxiliary electrode 1550 arranged in a pattern over and electrically coupled to second electrode 1040 (not shown).

[0503] The auxiliary electrode 1550 may be electrically conductive. In some non-limiting examples, the auxiliary electrode 1550 may be formed of at least one metal and / or metal oxide. Non-limiting examples of such metals include Cu, Al, molybdenum (Mo), or Ag. In some non-limiting examples, the auxiliary electrode 1550 may include a multilayer metal structure, including, but not limited to, one formed by Mo / Al / Mo. Non-limiting examples of such metal oxides include ITO, ZnO, IZO, or other oxides containing In or Zn. In some non-limiting examples, the auxiliary electrode 1550 may include a multilayer structure formed by a combination of at least one metal and at least one metal oxide, including, but not limited to, Ag / ITO, Mo / ITO, ITO / Ag / ITO, or ITO / Mo / ITO. In some non-limiting examples, the auxiliary electrode 1550 includes a plurality of such electrically conductive materials.

[0504] The device 1500 may be shown as comprising a substrate 10 , a first electrode 1020 , and at least one semiconductor layer 1030 .

[0505] The second electrode 1040 can be disposed on substantially all of the exposed layer surface 11 of the at least one semiconductor layer 1030 .

[0506] In some non-limiting examples, particularly in top-emitting devices 1500, the second electrode 1040 may be formed by depositing a relatively thin conductive film layer (not shown) to, by way of non-limiting example, reduce optical interference (including, but not limited to, attenuation, reflection, and / or diffusion) associated with the presence of the second electrode 1040. In some non-limiting examples, as described elsewhere, a reduced thickness of the second electrode 1040 may generally increase the sheet resistance of the second electrode 1040, which, in some non-limiting examples, may reduce the performance and / or efficiency of the device 1500. By providing an auxiliary electrode 1550 that may be electrically coupled to the second electrode 1040, the sheet resistance, and therefore the IR drop, associated with the second electrode 1040 may, in some non-limiting examples, be reduced.

[0507] In some non-limiting examples, device 1500 may be a bottom-emitting and / or dual-side emitting device 1500. In such examples, second electrode 1040 may be formed as a relatively thick conductive layer without substantially affecting the optical properties of such device 1500. Nevertheless, even in such scenarios, second electrode 1040 may be formed, by way of non-limiting example, as a relatively thin conductive film layer (not shown), such that device 1500 may be substantially transparent to light incident on its external surface, and a substantial portion of such external incident light may be transmitted through device 1500 in addition to the emission of photons internally generated within device 1500, as disclosed herein.

[0508] The patterned coating 610 may be selectively disposed in a pattern on the exposed layer surface 11 of the underlayer 130, which may be at least one semiconductor layer 1030, as shown in the figures. In some non-limiting examples, the patterned coating 610 may be disposed as a series of parallel rows 1520 in a first portion of the pattern, as shown in the figures.

[0509] A deposition layer 430 suitable for forming a patterned auxiliary electrode 1550 can be disposed over substantially all of the exposed layer surface 11 of the underlayer 130 using open mask and / or mask-free deposition processes. The underlayer 130 can include both areas of the patterned coating 610 arranged in the pattern of rows 1520 and areas of the at least one semiconductor layer 1030 where the patterned coating 610 is not deposited.

[0510] Due to the nucleation-inhibiting properties of the rows 1520 on which the patterned coating 610 is disposed, the deposition layer 430 disposed on such rows 1520 may tend not to remain, resulting in a pattern of selective deposition of the deposition layer 430 that may substantially correspond to at least one second portion 602 of the pattern, leaving the first portion 601 including the rows 1520 substantially free of a closed coating 440 of the deposition layer 430.

[0511] In other words, the deposition layer 430 that may form the auxiliary electrode 1550 may be selectively deposited substantially only on the second portion 602 that includes at least one region of the semiconductor layer 1030 that surrounds but does not occupy the row 1520.

[0512] In some non-limiting examples, an auxiliary electrode 1550 may be selectively deposited to Horizontal By covering only certain rows 1520 of the auxiliary electrodes 1550 and leaving other areas uncovered, optical interference associated with the presence of the auxiliary electrodes 1550 can be controlled and / or reduced.

[0513] In some non-limiting examples, the auxiliary electrodes 1550 can be selectively deposited in a pattern that cannot be easily detected by the naked eye from typical viewing distances.

[0514] In some non-limiting examples, auxiliary electrode 1550 may be formed in devices other than OLED devices, including to reduce the effective resistance of the electrodes in such devices.

[0515] The ability to pattern the electrodes 1020, 1040, 1550, including but not limited to the second electrode 1040 and / or auxiliary electrode 1550, without the use of a shadow mask 615 during the high temperature deposition layer 430 deposition process by using a patterned coating 610, including but not limited to the process shown in FIG. 7, may allow numerous configurations of the auxiliary electrode 1550 to be developed.

[0516] In some non-limiting examples, the auxiliary electrode 1550 may be disposed between adjacent emitting regions 1610 and electrically coupled to the second electrode 1040. In non-limiting examples, the width of the auxiliary electrode 1550 may be less than or equal to the separation distance between adjacent emitting regions 1610. As a result, there may be a gap in at least one non-emitting region 1620 on each side of the auxiliary electrode 1550. In some non-limiting examples, such an arrangement may reduce the possibility that the auxiliary electrode 1550 will interfere with the light output of the device 1500, in some non-limiting examples, from at least one of the emitting regions 1610. In some non-limiting examples, such a configuration may be appropriate when the auxiliary electrode 1550 is relatively thick (in some non-limiting examples, more than several hundred nanometers and / or on the order of several microns thick). In some non-limiting examples, the aspect ratio of the auxiliary electrode 1550 may be greater than at least one of about 0.05, such as at least one of about 0.1, about 0.2, about 0.5, about 0.8, about 1, or about 2. As non-limiting examples, the height (thickness) of the auxiliary electrode 1550 may be greater than about 50 nm, such as at least one of about 80 nm, about 100 nm, about 200 nm, about 500 nm, about 700 nm, about 1,000 nm, about 1,500 nm, about 1,700 nm, or about 2,000 nm.

[0517] FIG. 16 illustrates an example of an emission area 1610 that may correspond to (sub)pixel 2210 / 174x of an exemplary version 1600 of device 1000. Horizontal 1110 and a non-emitting region 1620 surrounding the emitting region 1610. HorizontalA schematic diagram showing an example of a pattern 1650 of auxiliary electrodes 1550 formed as a grid that can be overlaid on both 1120 and 1550 can be shown in plan view.

[0518] In some non-limiting examples, the pattern 1650 of the auxiliary electrode 1550 may be substantially the same as the non-emitting region 1620. Horizontal 1120, extending over only some, but not all, of the emission region 1610. Horizontal 1110 may be left substantially uncovered.

[0519] Those skilled in the art will appreciate that although the pattern 1650 of auxiliary electrodes 1550 is shown in the figures as being formed as a continuous structure such that all of its elements are physically connected and electrically coupled to one another and to at least one electrode 1020, 1040, 1550, which in some non-limiting examples may be the first electrode 1020 and / or the second electrode 1040, in some non-limiting examples, the pattern 1650 of auxiliary electrodes 1550 may be provided as multiple individual elements of the pattern 1650 of auxiliary electrodes 1550 that may not be physically connected to one another while remaining electrically coupled to one another. Even so, such individual elements of the pattern 1650 of auxiliary electrodes 1550 can still substantially reduce the sheet resistance of at least one electrode 1020, 1040, 1550 to which they are electrically coupled, and thus the sheet resistance of the device 1600, increasing the efficiency of the device 1600 without substantially interfering with its optical properties.

[0520] In some non-limiting examples, the auxiliary electrodes 1550 may be employed in devices 1600 having various arrangements of (sub)pixels 2210 / 174x. In some non-limiting examples, the (sub)pixel 2210 / 174x arrangement may be substantially diamond-shaped.

[0521] As a non-limiting example, FIG. 17A shows, in plan view, an exemplary version 1700 of device 1000 with multiple non-emitting regions 1620 including a diamond-configured PDL 1140. Horizontal 17. In some non-limiting examples, this configuration can be defined by the patterns 1741-1743 of emission regions 1610 and PDLs 1140 in an alternating pattern in the first and second rows.

[0522] In some non-limiting examples, the non-emitting region 1620 including the PDL 1140 Horizontal 1120 may be substantially oval in shape. In some non-limiting examples, the first row of non-emitting regions 1620 Horizontal The major axis of 1120 is the axis of the non-emitting region 1620 of the second row. Horizontal In some non-limiting examples, the first row of non-emitting regions 1620 may be aligned with and substantially perpendicular to the major axis of the first row of non-emitting regions 1620. Horizontal The major axis of 1120 may be substantially parallel to the axis of the first row.

[0523] In some non-limiting examples, a first group 1741 of emitting regions 1610 may correspond to subpixels 174x that emit EM radiation at a first wavelength, and in some non-limiting examples, the subpixels 1741 of the first group 174x may correspond to R (red) subpixels 1741. In some non-limiting examples, the first group 1741 of emitting regions 1610 may correspond to R (red) subpixels 1741. Horizontal 1110 can have a substantially diamond-shaped configuration. In some non-limiting examples, the emission regions 1610 of the first group 1741 can be in a first row pattern with the PDL 1140 in front and behind. In some non-limiting examples, the emission regions 1610 of the first group 1741 can be in a first row pattern with the PDL 1140 in front and behind. Horizontal 1110 is the non-emitting area 1620 before and after including the PDL 1140 of the same row. Horizontal 1120, as well as the adjacent non-emitting area 1620 including the PDL 1140 of the front and rear patterns of the second row. Horizontal It may overlap slightly with 1120.

[0524] In some non-limiting examples, the second group 1742 of emitting regions 1610 may correspond to subpixels 174x that emit EM radiation at a second wavelength, and in some non-limiting examples, the subpixels 1742 of second group 174x may correspond to G (green) subpixels 1742. In some non-limiting examples, the second group 1741 of emitting regions 1610 may correspond to G (green) subpixels 1742. Horizontal 1110 can have a substantially elliptical configuration. In some non-limiting examples, the emission areas 1610 of the second group 1741 can be in a second row pattern with the PDLs 1140 in front and behind. In some non-limiting examples, the emission areas 1610 of the second group 1741 can be in a second row pattern with the PDLs 1140 in front and behind. Horizontal The major axes of some of the emission regions 1610 of the second group 1741 may be at a first angle, in some non-limiting examples, 45°, to the axis of the second row. Horizontal The major axes of others of 1110 may be at a second angle, and in some non-limiting examples, may be substantially perpendicular to the first angle. Horizontal The emission areas 1610 of a first group 1741 may have a major axis at a first angle. Horizontal 1110 may alternate with a first group 1741 of emission regions 1610 which may have major axes at a second angle.

[0525] In some non-limiting examples, the third group 1743 of emitting regions 1610 may correspond to subpixels 174x that emit EM radiation at a third wavelength, and in some non-limiting examples, the subpixels 1743 of the third group 174x may correspond to B (blue) subpixels 1743. In some non-limiting examples, the third group 1743 of emitting regions 1610 may correspond to B (blue) subpixels 1743. Horizontal1110 can have a substantially diamond-shaped configuration. In some non-limiting examples, the emission regions 1610 of the third group 1743 can be in a first row pattern preceded and followed by a PDL 1140. In some non-limiting examples, the emission regions 1610 of the third group 1743 can be in a first row pattern preceded and followed by a PDL 1140. Horizontal 1110 is a diagram of the preceding and following non-emission regions 1620 containing PDLs 1140 of the same row. Horizontal 1110, and the adjacent non-emitting area 1620 including the PDLs 1140 of the preceding and succeeding patterns of the second row. Horizontal 1120. In some non-limiting examples, the second row pattern can include alternating emission regions 1610 of a first group 1741 and emission regions 1610 of a third group 1743, each preceded and followed by a PDL 1140.

[0526] Referring now to FIG. 17B, an exemplary cross-sectional view of device 1700 taken along line 17B-17B in FIG. 17A may be shown. In the figure, device 1700 may be shown as comprising a substrate 10 and multiple elements of a first electrode 1020 formed on an exposed layer surface 11 thereof. Substrate 10 may include a base substrate 1012 (not shown for ease of illustration) and / or at least one TFT structure 1101 corresponding to and driving each subpixel 174x. PDLs 1140 may be formed on substrate 10 between elements of first electrode 1020 to define emissive regions 1610 on each element of first electrode 1020, separated by non-emissive regions 1620 including PDLs 1140. In the figure, emissive regions 1610 may all correspond to second group 1742.

[0527] In some non-limiting examples, at least one semiconductor layer 1030 can be deposited on each element of the first electrode 1020 between the surrounding PDLs 1140 .

[0528] In some non-limiting examples, a second electrode 1040, which in some non-limiting examples may be a common cathode, may be deposited over the emissive regions 1610 of the second group 1742 to form its G (green) subpixels 1742, and may be deposited over the surrounding PDL 1140.

[0529] In some non-limiting examples, the patterned coating 610 may be patterned over the emission regions 1610 of the second group 1742 of G (green) subpixels 1742. Horizontal 1110 over the second electrode 1040 to selectively deposit the patterned coating 610 onto portions of the second electrode 1040 that may be substantially free of the patterned coating 610, i.e., the non-emissive regions 1620 that include the PDL 1140. Horizontal 1120 may allow for selective deposition of deposition layer 430 over the substrate. In some non-limiting examples, the deposition layer 430 may tend to accumulate along the substantially flat portions of the PDL 1140 because the deposition layer 430 may tend not to remain on the sloped portions of the PDL 1140 but may tend to descend to the base of such sloped portions, which may be coated with the patterned coating 610. In some non-limiting examples, the deposition layer 430 on the substantially flat portions of the PDL 1140 may form at least one auxiliary electrode 1550 that may be electrically coupled to the second electrode 1040.

[0530] In some non-limiting examples, device 1700 may comprise a CPL and / or an outcoupling layer. By way of non-limiting example, such a CPL and / or outcoupling layer may be provided directly on the surface of second electrode 1040 and / or on the surface of patterned coating 610. In some non-limiting examples, such a CPL and / or outcoupling layer may be provided on at least one emissive region 1610 corresponding to (sub)pixel 2210 / 174x. Horizontal 1110 may be provided.

[0531] In some non-limiting examples, the patterned coating 610 may also function as an index-matching coating. In some non-limiting examples, the patterned coating 610 may also function as an outcoupling layer.

[0532] In some non-limiting examples, device 1700 can include an encapsulation layer 1450. Non-limiting examples of such an encapsulation layer 1450 include a glass cap, a barrier film, a barrier adhesive, a barrier coating 1450, and / or a TFE layer, as shown in dashed outline in the figure, provided to encapsulate device 1700. In some non-limiting examples, a TFE layer can be considered a type of barrier coating 1450.

[0533] In some non-limiting examples, the encapsulation layer 1450 may be disposed over at least one of the second electrode 1040 and / or the patterned coating 610. In some non-limiting examples, the device 1700 may comprise additional optical and / or structural layers, coatings, and components, including, but not limited to, a polarizer, a color filter, an anti-reflective coating, an anti-glare coating, a cover glass, and / or an optically clear adhesive (OCA).

[0534] 17C, an exemplary cross-sectional view of device 1700 taken along line 17C-17C in FIG. 17A may be shown. In the figure, device 1700 may be shown as comprising substrate 10 and multiple elements of first electrode 1020 formed on its exposed layer surface 11. PDL 1140 may be formed on substrate 10 between elements of first electrode 1020 to define emissive regions 1610 on each element of first electrode 1020, separated by non-emissive regions 1620 that include PDL 1140. In the figure, emissive regions 1610 may correspond alternately to first group 1741 and third group 1743.

[0535] In some non-limiting examples, at least one semiconductor layer 1030 can be deposited on each element of the first electrode 1020 between the surrounding PDLs 1140 .

[0536] In some non-limiting examples, the second electrode 1040, which in some non-limiting examples may be a common cathode, may be deposited over the emission regions 1610 of the first group 1741 to form their R (red) subpixels 1741, and / or may be deposited over the emission regions 1610 of the third group 1743 to form their B (blue) subpixels 1743, and may be deposited over the surrounding PDL 1140.

[0537] In some non-limiting examples, the patterned coating 610 may be patterned over the emissive regions 1610 of a first group 1741 of R (red) subpixels 1741 and / or a third group 1743 of B (blue) subpixels 1743. Horizontal 1110 over the second electrode 1040 to selectively deposit the patterned coating 610 over portions of the second electrode 1040 that may be substantially free of the patterned coating 610, i.e., over the non-emissive regions 1620 that include the PDL 1140. Horizontal 1120. In some non-limiting examples, the deposition layer 430 may tend to accumulate along the substantially flat portions of the PDL 1140 because the deposition layer 430 may tend not to remain on the sloped portions of the PDL 1140 but may tend to descend to the base of such sloped portions, which are coated with the patterned coating 610. In some non-limiting examples, the deposition layer 430 on the substantially flat portions of the PDL 1140 may form at least one auxiliary electrode 1550 that may be electrically coupled to the second electrode 1040.

[0538] Referring now to FIG. 18, an exemplary version 1800 of device 1000 is shown that may encompass the device shown in cross-section in FIG. 11, but with additional deposition steps described herein.

[0539] The device 1800 has a luminance of 1610 corresponding to (sub)pixel 2210 / 174x. Horizontal 1110, within the first portion 601 of the device 1800, a non-emitting region 1620 surrounding the first portion 601. Horizontal 1120 can be seen to have been selectively deposited on the exposed layer surface 11 of the underlayer 130, shown as the second electrode 1040, but not within the second portion 602 of the device 1800.

[0540] In some non-limiting examples, the patterned coating 610 can be selectively deposited using a shadow mask 615 .

[0541] The patterned coating 610 can provide an exposed layer surface 11 within the first portion 601 that has a relatively low initial adhesion probability for the deposition of deposition material 731 that is later deposited as a deposition layer 430 to form the auxiliary electrode 1550.

[0542] After selective deposition of the patterned coating 610, the deposition material 731 may be deposited over the device 1800 but may remain substantially only in the second portion 602, which may be substantially free of the patterned coating 610, to form the auxiliary electrode 1550.

[0543] In some non-limiting examples, the deposition material 731 may be deposited using an open mask and / or a mask-free deposition process.

[0544] The auxiliary electrode 1550 may be located over the second electrode 1040 over a second portion that may be substantially free of the patterned coating 610, as shown, and may be electrically coupled to the second electrode 1040, including in physical contact with the second electrode 1040, to reduce the sheet resistance of the second electrode.

[0545] In some non-limiting examples, the deposition layer 430 can comprise substantially the same material as the second electrode 1040 to ensure a high initial sticking probability for the deposition of the deposition material 731 in the second portion 602.

[0546] In some non-limiting examples, the second electrode 1040 can include substantially pure Mg and / or an alloy of Mg with another metal, including, but not limited to, Ag. In some non-limiting examples, the Mg:Ag alloy composition can range from about 1:9 to 9:1 by volume. In some non-limiting examples, the second electrode 1040 can include a metal oxide, including, but not limited to, a ternary metal oxide, such as, but not limited to, ITO and / or IZO, and / or a combination of metals and / or metal oxides.

[0547] In some non-limiting examples, the deposited layer 430 used to form the auxiliary electrode 1550 can include substantially pure Mg.

[0548] Referring now to FIG. 19, an exemplary version 1900 of device 1000 is shown that may encompass the device shown in cross section in FIG. 11, but with additional deposition steps described herein.

[0549] Device 1900 has a luminance of 1610 corresponding to (sub)pixel 2210 / 174x. Horizontal 1110, but not in second portion 602. In the illustration, first portion 601 may extend partially along the extent of the sloped portion of PDL 1140 that defines emission region 1610.

[0550] In some non-limiting examples, the patterned coating 610 can be selectively deposited using a shadow mask 615 .

[0551] The patterned coating 610 can provide an exposed layer surface 11 within the first portion 601 that has a relatively low initial adhesion probability for the deposition of deposition material 731 that is later deposited as a deposition layer 430 to form the auxiliary electrode 1550.

[0552] After selective deposition of patterned coating 610, deposition material 731 may be deposited over device 1900 but may remain substantially only in second portion 602, which may be substantially free of patterned coating 610, to form auxiliary electrode 1550. Thus, in device 1900, auxiliary electrode 1550 may extend partially across the sloped portion of PDL 1140 that defines emission region 1610.

[0553] In some non-limiting examples, the deposition layer 430 can be deposited using open mask and / or mask-free deposition processes.

[0554] The auxiliary electrode 1550 may be located over the second electrode 1040 over the second portion 602, which may be substantially free of the patterned coating 610, as shown, and may be electrically coupled to the second electrode 1040, including in physical contact with the second electrode 1040, to reduce the sheet resistance of the second electrode.

[0555] In some non-limiting examples, the material that can comprise the second electrode 1040 cannot have a high initial sticking probability for the deposition of the deposition material 731 .

[0556] Referring now to FIG. 20, a scenario is illustrated in which an exemplary version 2000 of device 1000 may be shown that may include the device shown in cross-sectional view in FIG. 11, but with additional deposition steps as described herein.

[0557] Device 2000 can show NPC 920 deposited on exposed layer surface 11 of the underlying material, shown as second electrode 1040 .

[0558] In some non-limiting examples, the NPC 920 can be deposited using open mask and / or mask-free deposition processes.

[0559] The patterned coating 610 is then applied to the emission area 1610 corresponding to the (sub)pixel 2210 / 174x. Horizontal 1110. A non-emitting region 1620 within and surrounding a first portion 601 of the device 2000 substantially corresponds to a portion of the first portion 601. Horizontal 1120, but on the exposed layer surface 11 of the underlying material, shown as NPC 920.

[0560] In some non-limiting examples, the patterned coating 610 can be selectively deposited using a shadow mask 615 .

[0561] The patterned coating 610 can provide an exposed layer surface 11 within the first portion 601 that has a relatively low initial adhesion probability for the deposition of deposition material 731 that is later deposited as a deposition layer 430 to form the auxiliary electrode 1550.

[0562] After selective deposition of the patterned coating 610, the deposition material 731 may be deposited on the device 2000 but may remain substantially only in the second portion 602, which may be substantially free of the patterned coating 610, to form the auxiliary electrode 1550.

[0563] In some non-limiting examples, the deposition layer 430 can be deposited using open mask and / or mask-free deposition processes.

[0564] The auxiliary electrode 1550 can be electrically coupled to the second electrode 1040 to reduce its sheet resistance. As shown, the auxiliary electrode 1550 may not be located over or in physical contact with the second electrode 1040, although one skilled in the art will understand that the auxiliary electrode 1550 can be electrically coupled to the second electrode 1040 by several well-understood mechanisms. As a non-limiting example, the presence of a relatively thin film of patterned coating 610 (in some non-limiting examples, up to about 50 nm) can still allow current to pass therethrough, thus allowing the sheet resistance of the second electrode 1040 to be reduced.

[0565] Referring now to FIG. 21, an exemplary version 2100 of device 1000 is shown that may encompass the device shown in cross section in FIG. 11, but with additional deposition steps described herein.

[0566] Device 2100 can show a patterned coating 610 deposited on the exposed layer surface 11 of the underlying material, shown as second electrode 1040 .

[0567] In some non-limiting examples, patterned coating 610 may be deposited using open mask and / or mask-free deposition processes.

[0568] The patterned coating 610 can provide an exposed layer surface 11 with a relatively low initial sticking probability for the deposition of the deposition material 731 that is subsequently deposited as the deposition layer 430 to form the auxiliary electrode 1550 .

[0569] After deposition of the patterned coating 610, the NPC 920 is Horizontal 1120 and corresponds to (sub)pixel 2210 / 174x. Horizontal1110, may be selectively deposited on exposed layer surface 11 of underlayer 130, shown as patterned coating 610, surrounding second portion 602 of device 2100.

[0570] In some non-limiting examples, the NPC 920 can be selectively deposited using a shadow mask 615.

[0571] The NPC 920 can provide an exposed layer surface 11 in the first portion 601 that has a relatively high initial sticking probability for the deposition of the deposition material 731 that is later deposited as the deposition layer 430 to form the auxiliary electrode 1550.

[0572] After selective deposition of NPC 920, deposition material 731 may be deposited over device 2100, leaving patterned coating 610 substantially where it was covered by NPC 920, to form auxiliary electrode 1550.

[0573] In some non-limiting examples, the deposition layer 430 can be deposited using open mask and / or mask-free deposition processes.

[0574] The auxiliary electrode 1550 may be electrically connected to the second electrode 1040 to reduce the sheet resistance of the second electrode 1040 .

[0575] Transparent PLED Because OLED device 1000 can emit EM radiation through either or both first electrode 1020 (in the case of bottom-emitting and / or dual-emitting devices) and substrate 10 and / or second electrode 1040 (in the case of top-emitting and / or dual-emitting devices), either or both first electrode 1020 and / or second electrode 1040 can be, in some non-limiting examples, at least the emitting region 1610 of device 1000. HorizontalIt may be the goal to make the electrodes 1020, 1040 substantially photon (or light) transmissive ("transparent") over a substantial portion of the electrodes 1020, 1040. In the present disclosure, such transmissive elements, including but not limited to the electrodes 1020, 1040, the materials from which such elements may be formed, and / or their properties, may comprise elements, materials, and / or properties that are substantially transmissive ("transparent") and / or, in some non-limiting examples, partially transmissive ("semi-transparent") in at least one wavelength range.

[0576] At least the emission region 1610 of the device 1000 Horizontal A variety of mechanisms can be employed to impart transmissive properties to device 1000 throughout a substantial portion of 1110.

[0577] In some non-limiting examples, including but not limited to when device 1000 is a bottom-emitting device and / or a dual-sided emitting device, the TFT structure 1101 of the drive circuitry associated with the emission region 1610 of (sub)pixel 2210 / 174x can at least partially reduce the transmittance of the surrounding substrate 10. Horizontal To avoid affecting the transmission properties of the substrate 10 in 1120, the surrounding non-emitting region 1620 Horizontal 1110.

[0578] In some non-limiting examples where device 1000 is a dual-emitting device, the emission area 1610 of (sub)pixel 2210 / 174x Horizontal With respect to 1110, the first of the electrodes 1020, 1040 may be made substantially transparent by, but not limited to, at least one of the mechanisms disclosed herein, and the adjacent (sub)pixel 2210 / 174x Horizontal With respect to 1110, the second of electrodes 1020, 1040 may be made substantially transparent by at least one of the mechanisms disclosed herein, including but not limited to, the first emissive region 1610 of (sub)pixel 2210 / 174x. Horizontal 1110 can be substantially top-emitting, while the second emitting region 1610 of the adjacent (sub)pixel 2210 / 174x Horizontal 1110 may be substantially bottom emitting, whereby in an alternating (sub)pixel 2210 / 174x sequence a subset of the (sub)pixels 2210 / 174x may be substantially top emitting and a subset of the (sub)pixels 2210 / 174x may be substantially bottom emitting, while only a single electrode 1020, 1040 of each (sub)pixel 2210 / 174x may be substantially transparent.

[0579] In some non-limiting examples, a mechanism for making the electrodes 1020, 1040 transparent, the first electrode 1020 in the case of bottom-emitting and / or dual-emitting devices, and / or the second electrode 1040 in the case of top-emitting and / or dual-emitting devices, may be to form such electrodes 1020, 1040 from a transparent thin film.

[0580] In some non-limiting examples, the conductive deposition layer 430 may be a thin film, including but not limited to, formed by depositing a thin conductive film layer of a metal, including but not limited to, Ag, Al, and / or a thin film formed by depositing a thin layer of a metal alloy, including but not limited to, Mg:Ag alloy and / or Yb:Ag alloy, and may exhibit transmissive properties. In some non-limiting examples, the alloy may include a composition in a range of about 1:9 to 9:1 by volume. In some non-limiting examples, the electrodes 1020, 1040 may be formed from multiple thin conductive film layers of any combination of deposited layers 430, at least one of which may be composed of a TCO, a thin metal film, a thin metal alloy film, and / or any combination of any of these.

[0581] In some non-limiting examples, particularly for such thin conductive films, the relatively thin layer thickness can be substantially up to tens of nanometers, and can contribute not only to improved transmission quality but also favorable optical properties for use in OLED device 1000, including, but not limited to, reduced microcavity effects.

[0582] In some non-limiting examples, reducing the thickness of the electrodes 1020, 1040 to improve transmission quality may be accompanied by an increase in the sheet resistance of the electrodes 1020, 1040.

[0583] In some non-limiting examples, a device 1000 having at least one electrode 1020, 1040 with a high sheet resistance generates a large current-resistance (IR) drop when coupled to a power source 1005 during operation. In some non-limiting examples, such IR drop can be compensated for to some extent by increasing the level of the power source 1005. However, in some non-limiting examples, increasing the level of the power source 1005 to compensate for the IR drop due to the high sheet resistance for at least one (sub)pixel 2210 / 174x may require increasing the level of voltage supplied to other components to maintain effective operation of the device 1000.

[0584] In some non-limiting examples, to reduce the power supply requirements of device 1000 without significantly affecting the ability of electrodes 1020, 1040 to be substantially transparent (by using at least one thin film layer of any combination of TCO, thin metal film, and / or thin metal alloy film), auxiliary electrodes 1550 can be formed on device 1000 to more effectively deliver current to the various emission regions of device 1000 while simultaneously reducing the sheet resistance and associated IR drop of the transparent electrodes 1020, 1040.

[0585] In some non-limiting examples, the sheet resistance specification of the common electrodes 1020, 1040 of the display device 1000 may vary according to several parameters, including, but not limited to, the (panel) size of the device 1000 and / or the tolerance for voltage variation across the device 1000. In some non-limiting examples, the sheet resistance specification may increase (i.e., a lower sheet resistance is specified) as the panel size increases. In some non-limiting examples, the sheet resistance specification may increase as the tolerance for voltage variation decreases.

[0586] In some non-limiting examples, sheet resistance specifications can be used to derive exemplary thicknesses of the auxiliary electrode 1550 to comply with such specifications for various panel sizes.

[0587] As a non-limiting example, for a top-emission device, the second electrode 1040 can be transparent, whereas in some non-limiting examples, such an auxiliary electrode 1550 may not be substantially transparent but may be electrically coupled to the second electrode 1040 by, including but not limited to, depositing a conductive deposition layer 430 therebetween to reduce the effective sheet resistance of the second electrode 1040.

[0588] In some non-limiting examples, such auxiliary electrodes 1550 may be Horizontal To avoid interfering with the photon emission from 1110, Horizontal and / or may be located and / or shaped in either or both of the cross sections.

[0589] In some non-limiting examples, the mechanism for creating the first electrode 1020 and / or the second electrode 1040 may include attaching such electrodes 1020, 1040 to the emitter region 1610 thereof. Horizontal 1110 and / or in some non-limiting examples, the non-emitting region 1620 surrounding them. Horizontal1120. In some non-limiting examples, such a mechanism may be to form a pattern over at least a portion of the emissive region 1610 of (sub)pixel 2210 / 174x, as described above. Horizontal To avoid interfering with the photon emission from 1110, Horizontal and / or may be used to form auxiliary electrodes 1550 in position and / or shape in either or both cross sections.

[0590] In some non-limiting examples, device 1000 may be configured such that the optical path of photons emitted by device 1000 is substantially free of conductive oxide material. As a non-limiting example, at least one emissive region 1610 corresponding to (sub)pixel 2210 / 174x may be Horizontal In 1110, at least one of the layers and / or coatings deposited after the at least one semiconductor layer 1030, including but not limited to the second electrode 1040, the patterned coating 610, and / or any other layers and / or coatings deposited thereon, may be substantially devoid of any conductive oxide material. In some non-limiting examples, the substantial absence of conductive oxide material can reduce absorption and / or reflection of light emitted by the device 1000. As non-limiting examples, conductive oxide materials, including but not limited to ITO and / or IZO, can absorb light in at least the B (blue) region of the visible light spectrum, which can generally reduce the efficiency and / or performance of the device 1000.

[0591] In some non-limiting examples, a combination of these and / or other mechanisms may be used.

[0592] Furthermore, in some non-limiting examples, at least one of the first electrode 1020, the second electrode 1040, and / or the auxiliary electrode 1550 may be connected to a portion of the emissive region 1610 corresponding to the (sub)pixel 2210 / 174x of the device 1000. HorizontalIn addition to being substantially transparent over at least a substantial portion of 1110, Horizontal 1110 of the surrounding non-emitting region 1620 of the device 1000 to allow emission substantially throughout the Horizontal 1120 to be substantially transparent in both the downward and upward directions, making device 1000 substantially transparent to light incident on its external surface, thereby allowing a substantial portion of such externally incident light to be transmitted through device 1000 in addition to photon emission (top emission, bottom emission, and / or dual-sided emission) generated internally within device 1000 as disclosed herein.

[0593] 22A , there can be seen an exemplary plan view of a transmissive (clear) version of device 1000, generally designated 2200. In some non-limiting examples, device 2200 can be an AMOLED device having a plurality of pixels or pixel regions 2210 and a plurality of transmissive regions 2220. In some non-limiting examples, at least one auxiliary electrode 1550 can be deposited on an exposed layer surface 11 of the underlying material between pixel regions 2210 and / or transmissive regions 2220.

[0594] In some non-limiting examples, each pixel region 2210 can include multiple emissive regions 1610, each corresponding to a sub-pixel 174x. In some non-limiting examples, the sub-pixels 174x can correspond to an R (red) sub-pixel 1741, a G (green) sub-pixel 1742, and / or a B (blue) sub-pixel 1743, respectively.

[0595] In some non-limiting examples, each transmissive region 2220 may be substantially transparent, allowing light to pass through its entire cross section.

[0596] Referring now to FIG. 22B, an exemplary cross-sectional view of version 2200 of device 1000 taken along line 22B-22B in FIG. 22A can be seen. In the figure, device 2200 can be shown as including a substrate 10, a TFT insulating layer 1109, and a first electrode 1020 formed on a surface of the TFT insulating layer 1109. The substrate 10 can include a base substrate 1012 (not shown for ease of illustration) and / or at least one TFT structure 1101 disposed substantially thereunder for corresponding to and driving each subpixel 174x electrically coupled to its first electrode 1020. A PDL 1140 can be formed in a non-emissive region 1620 on the substrate 10 to define an emissive region 1610 on the corresponding first electrode 1020 corresponding to each subpixel 174x. The PDL 1140 can cover an edge of the first electrode 1020.

[0597] In some non-limiting examples, at least one semiconductor layer 1030 may be deposited over the exposed areas of the first electrode 1020, and in some non-limiting examples, over at least a portion of the surrounding PDL 1140.

[0598] In some non-limiting examples, the second electrode 1040 may be deposited on at least one semiconductor layer 1030, including on the pixel region 2210, to form that subpixel 174x, and in some non-limiting examples, may be deposited at least partially on the surrounding PDL 1140 within the transparent region 2220.

[0599] In some non-limiting examples, the patterned coating 610 may be selectively deposited on a first portion 601 of the device 2200, including both the pixel region 2210 and the transparent region 2220, but not the region of the second electrode 1040 corresponding to the auxiliary electrode 1550, including its second portion 602.

[0600] In some non-limiting examples, the entire exposed layer surface 11 of the device 2200 may then be exposed to a vapor flux 732 of a deposition material 731, which may be Mg in some non-limiting examples. The deposition layer 430 may be selectively deposited on a second portion of the second electrode 1040, which may be substantially devoid of the patterned coating 610, to form an auxiliary electrode 1550, which may be electrically coupled to, and in some non-limiting examples, physically contact, the uncoated portion of the second electrode 1040.

[0601] At the same time, the transmissive region 2220 of the device 2200 can remain substantially devoid of any material that may substantially affect the transmission of EM radiation therethrough. In particular, as shown, the TFT structure 1101 and the first electrode 1020 can be located, in cross section, below its corresponding subpixel 174x and, along with the auxiliary electrode 1550, outside the transmissive region 2220. As a result, these components may not attenuate or impede light from being transmitted through the transmissive region 2220. In some non-limiting examples, such an arrangement can allow an observer viewing the device 2200 from a typical viewing distance to see through the device 2200 when all (sub)pixels 2210 / 174x may not be emitting, thus creating a transparent device 2200.

[0602] Although not shown, in some non-limiting examples, device 2200 may further include NPC 920 disposed between auxiliary electrode 1550 and second electrode 1040. In some non-limiting examples, NPC 920 may be disposed between patterned coating 610 and second electrode 1040.

[0603] In some non-limiting examples, patterned coating 610 may be formed simultaneously with at least one semiconductor layer 1030. As a non-limiting example, at least one material used to form patterned coating 610 may be used to form at least one semiconductor layer 1030. In such non-limiting examples, several steps for manufacturing device 2200 may be reduced.

[0604] Those skilled in the art will appreciate that, in some non-limiting examples, various other layers and / or coatings, including but not limited to those forming at least one semiconductor layer 1030 and / or second electrode 1040, may cover portions of transmissive region 2220, particularly if such layers and / or coatings are substantially transparent. In some non-limiting examples, PDL 1140 may have a reduced thickness, including but not limited to, in some non-limiting examples, by forming wells therein similar to those defined for emission region 1610, to further facilitate light transmission through transmissive region 2220.

[0605] Those skilled in the art will appreciate that (sub)pixel 2210 / 174x arrangements other than those shown in Figures 22A and 22B may be employed in some non-limiting examples.

[0606] 22A and 22B may be employed in some non-limiting examples. As a non-limiting example, the auxiliary electrodes 1550 may be disposed between the pixel region 2210 and the transmissive region 2220. As a non-limiting example, the auxiliary electrodes 1550 may be disposed between the sub-pixels 174x within the pixel region 2210.

[0607] 23A , there is shown an exemplary plan view of a transparent version of device 1000, generally designated 2300. In some non-limiting examples, device 2300 may be an AMOLED device having a plurality of pixel regions 2210 and a plurality of transmissive regions 2220. Device 2300 may differ from device 2200 in that auxiliary electrode 1550 is not present between pixel regions 2210 and / or transmissive regions 2220.

[0608] In some non-limiting examples, each pixel region 2210 can include multiple emissive regions 1610, each corresponding to a sub-pixel 174x. In some non-limiting examples, the sub-pixels 174x can correspond to an R (red) sub-pixel 1741, a G (green) sub-pixel 1742, and / or a B (blue) sub-pixel 1743, respectively.

[0609] In some non-limiting examples, each transmissive region 2220 may be substantially transparent and may allow light to pass through its entire cross section.

[0610] 23B, an exemplary cross-sectional view of device 2300 taken along line 23-23 in FIG. 23A can be seen. In the figure, device 2300 can be shown as including a substrate 10, a TFT insulating layer 1109, and a first electrode 1020 formed on a surface of TFT insulating layer 1109. Substrate 10 can include a base substrate 1012 (not shown for ease of illustration) and / or at least one TFT structure 1101 disposed substantially thereunder for corresponding to and driving each subpixel 174x electrically coupled with its first electrode 1020. The PDL 1140 may be formed in a non-emissive region 1620 on the substrate 10 to define an emissive region 1610 corresponding to each subpixel 174x on a corresponding first electrode 1020. The PDL 1140 covers the edges of the first electrode 1020.

[0611] In some non-limiting examples, at least one semiconductor layer 1030 may be deposited over the exposed areas of the first electrode 1020, and in some non-limiting examples, over at least a portion of the surrounding PDL 1140.

[0612] In some non-limiting examples, the first deposition layer 430a may be deposited on at least one semiconductor layer 1030, including on the pixel region 2210, to form the subpixel 174x, and may be deposited on the surrounding PDL 1140 in the transmissive region 2220. In some non-limiting examples, the average layer thickness of the first deposition layer 430a may be relatively thin such that the presence of the first deposition layer 430a across the transmissive region 2220 does not substantially attenuate the transmission of light. In some non-limiting examples, the first deposition layer 430a may be deposited using an open mask and / or a mask-free deposition process.

[0613] In some non-limiting examples, the patterned coating 610 may be selectively deposited onto a first portion 601 of the device 2300 that includes the transmissive region 2220 .

[0614] In some non-limiting examples, the entire exposed layer surface 11 of the device 2300 may then be exposed to a vapor flux 732 of a deposition material 731, which in some non-limiting examples may be Mg, to selectively deposit a second deposition layer 430b on the second portion 602 of the first deposition layer 430a, which may be substantially free of the patterned coating 610, in some examples the pixel region 2210, such that the second deposition layer 430b may be electrically coupled, and in some non-limiting examples physically contacted, with the uncoated portion of the first deposition layer 430a to form a second electrode 1040.

[0615] In some non-limiting examples, the average thickness of the first deposition layer 430a may be equal to or less than the average thickness of the second deposition layer 430b. In this manner, a relatively high transmittance may be maintained in the permeable region 2220, which may include only the first deposition layer 430a. In some non-limiting examples, the average thickness of the first deposition layer 430a may be equal to or less than at least one of about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm, about 8 nm, or about 5 nm. In some non-limiting examples, the average thickness of the second deposition layer 430b may be equal to or less than at least one of about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm, or about 8 nm.

[0616] Thus, in some non-limiting examples, the thickness of second electrode 1040 can be about 40 nm or less, and / or in some non-limiting examples, at least one of about 5-30 nm, about 10-25 nm, or about 15-25 nm.

[0617] In some non-limiting examples, the average thickness of the first deposition layer 430a may be greater than the average thickness of the second deposition layer 430b. In some non-limiting examples, the average thickness of the first deposition layer 430a and the average thickness of the second deposition layer 430b may be substantially the same.

[0618] In some non-limiting examples, the at least one deposition material 731 used to form the first deposition layer 430a may be substantially the same as the at least one deposition material 731 used to form the second deposition layer 430b. In some non-limiting examples, such at least one deposition material 731 may be substantially as described herein with respect to the first electrode 1020, the second electrode 1040, the auxiliary electrode 1550, and / or their deposition layers 430.

[0619] In some non-limiting examples, the transparent region 2220 of the device 2300 can remain substantially devoid of any material that can substantially inhibit the transmission of EM radiation therethrough. In particular, as shown, the TFT structure and / or first electrode 1020 can be located in cross section below its corresponding subpixel 174x and beyond the transmissive region 2220. As a result, these components may not attenuate or impede EM radiation from passing through the transmissive region 2220. In some non-limiting examples, such an arrangement allows a viewer viewing the device 2300 from a typical viewing distance to see through the device 2300 when the (sub)pixel 2210 / 174x is not emitting, thus creating a transparent AMOLED device 2300.

[0620] Although not shown in the figures, in some non-limiting examples, device 2300 can further include an NPC 920 disposed between second deposition layer 430b and first deposition layer 430a. In some non-limiting examples, NPC 920 can be disposed between patterned coating 610 and first deposition layer 430a.

[0621] In some non-limiting examples, patterned coating 610 may be formed simultaneously with at least one semiconductor layer 1030. As a non-limiting example, at least one material used to form patterned coating 610 may be used to form at least one semiconductor layer 1030. In such non-limiting examples, several steps for manufacturing device 2300 may be reduced.

[0622] Those skilled in the art will appreciate that, in some non-limiting examples, various other layers and / or coatings, including but not limited to those forming at least one semiconductor layer 1030 and / or first deposited layer 430a, may cover portions of transmissive region 2220, particularly if such layers and / or coatings are substantially transparent. In some non-limiting examples, PDL 1140 may have a reduced thickness, including but not limited to, in...

Claims

1. An optoelectronic device having a plurality of layers disposed on a substrate, the optoelectronic device extending into at least one lateral interfacial portion and a non-interfacial portion, the at least one lateral direction being defined by a horizontal axis of the lateral direction, the optoelectronic device comprising: at least one semiconductor layer disposed on the substrate; a first emission region at the interface portion, the first emission region comprising a first electrode and a second electrode, the first electrode being disposed between the substrate and the at least one semiconductor layer, and the at least one semiconductor layer being disposed between the first electrode and the second electrode; a low refractive index layer having a first refractive index at wavelengths within a first wavelength range, the low refractive index layer being disposed on a first layer surface of one of the at least one semiconductor layer at least in the interface portion; a high refractive index layer having a second refractive index at wavelengths within a second wavelength range disposed on the second exposed layer surface of the optoelectronic device to define a refractive index interface with the low refractive index layer at the interface portion, the second refractive index exceeding the first refractive index; wherein the non-interface portion is substantially devoid of such refractive index interfaces; The optoelectronic device, wherein the first wavelength range and the second wavelength range are the same.

2. 10. The optoelectronic device of claim 1, wherein the first wavelength range is selected from one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and between about 300-900 nm.

3. 3. The optoelectronic device of claim 1, wherein the first refractive index varies over the first wavelength range by no more than one of about 0.4, about 0.3, about 0.2, and about 0.

1.

4. 4. The optoelectronic device of claim 1, wherein the first refractive index is less than or equal to one of about 1.7, about 1.6, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, and about 1.25 within the first wavelength range.

5. The optoelectronic device of any one of claims 1 to 4, wherein the first refractive index is one of between about 1.2 and 1.6, about 1.2 and 1.5, about 1.25 and 1.45, and about 1.25 and 1.

4.

6. The optoelectronic device of claim 1 , wherein the low refractive index layer comprises a low refractive index material.

7. 7. The optoelectronic device of claim 6, wherein at least one of the low refractive index layer and the low refractive index material exhibits an extinction coefficient within the first wavelength range that is less than or equal to one of about 0.1, about 0.08, about 0.05, about 0.03, and about 0.

01.

8. 8. An optoelectronic device according to claim 6 or 7, wherein at least one of the low refractive index layer and the low refractive index material is substantially transparent.

9. 9. An optoelectronic device according to claim 6, wherein at least one of the low refractive index layer and the low refractive index material comprises at least one void therein.

10. The optoelectronic device according to any one of claims 6 to 9, wherein the low refractive index material comprises at least one of an organic compound and an organic-inorganic hybrid material.

11. 11. The optoelectronic device of any one of claims 1 to 10, wherein the second wavelength range is selected from one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and between about 300-900 nm.

12. 12. The optoelectronic device of claim 1, wherein the second refractive index is at least one of about 1.7, about 1.8, and about 1.

9.

13. 13. The optoelectronic device of claim 1, wherein the second refractive index exceeds the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.

5.

14. 14. The optoelectronic device of claim 1, wherein a second maximum refractive index corresponding to a maximum value of the second refractive index measured within the second wavelength range exceeds a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range.

15. 15. The optoelectronic device of claim 14, wherein the first maximum refractive index corresponds to a first wavelength within the first wavelength range that is different from a second wavelength within the second wavelength range to which the second maximum refractive index corresponds.

16. 16. The optoelectronic device of claim 14 or 15, wherein the second maximum refractive index exceeds the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.

7.

17. 17. The optoelectronic device of claim 1, wherein the high refractive index layer comprises a physical coating selected from at least one of a capping layer, a barrier coating, an encapsulation layer, a thin film encapsulation layer, and a polarizing layer.

18. 18. An optoelectronic device according to any one of claims 1 to 17, wherein the high refractive index layer comprises an air gap.

19. 18. An optoelectronic device according to any one of claims 1 to 17, wherein the high refractive index layer comprises a high refractive index material.

20. 20. The optoelectronic device of claim 19, wherein at least one of the high refractive index layer and the high refractive index material exhibits an extinction coefficient within the second wavelength range that is less than or equal to one of about 0.1, about 0.08, about 0.05, about 0.03, and about 0.

01.

21. 21. An optoelectronic device according to claim 19 or 20, wherein at least one of the high refractive index layer and the high refractive index material is substantially transparent.

22. 22. An optoelectronic device according to any one of claims 19 to 21, wherein the high refractive index material comprises an organic compound.

23. An optoelectronic device as described in any one of claims 1 to 22, wherein the one semiconductor layer has a third refractive index that exceeds the first refractive index at wavelengths within a third wavelength range, and the first wavelength range and the third wavelength range are the same.

24. 24. The optoelectronic device of claim 23, wherein the third wavelength range is selected from one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, and between about 300-900 nm.

25. 25. An optoelectronic device according to any one of claims 23 to 24, wherein the third refractive index is at least one of about 1.7, about 1.8, and about 1.

9.

26. 26. The optoelectronic device of any one of claims 23 to 25, wherein the third refractive index exceeds the first refractive index by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, and about 1.

5.

27. 27. An optoelectronic device according to any one of claims 23 to 26, wherein a third maximum refractive index corresponding to a maximum value of the third refractive index measured within the third wavelength range exceeds a first maximum refractive index corresponding to a maximum value of the first refractive index measured within the first wavelength range.

28. 28. The optoelectronic device of claim 27, wherein the first maximum refractive index corresponds to a first wavelength within the first wavelength range that is different from a third wavelength within the third wavelength range to which the third maximum refractive index corresponds.

29. 29. The optoelectronic device of claim 27 or 28, wherein the third maximum refractive index exceeds the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, and about 1.

7.

30. 10. The optoelectronic device of claim 1, wherein the one semiconductor layer is selected from an electron transport layer and an electron injection layer.

31. 31. An optoelectronic device according to any one of claims 1 to 30, wherein the average thickness of the low refractive index layer is equal to or less than the average thickness of the high refractive index layer.

32. 32. The optoelectronic device of claim 31 , wherein the average layer thickness of the low refractive index layer is less than or equal to one of about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 10 nm, about 8 nm, and about 5 nm.

33. 33. The optoelectronic device according to claim 31 or 32, wherein the average layer thickness of the low refractive index layer is one of between about 5 to 20 nm and about 5 to 15 nm.

34. 34. An optoelectronic device according to any one of claims 1 to 33, wherein said low refractive index material exhibits a surface energy of about 25 dynes / cm or less and said first refractive index is about 1.45 or less.

35. 35. An optoelectronic device according to any one of claims 1 to 34, wherein said low refractive index material exhibits a surface energy of about 20 dynes / cm or less and said first refractive index is about 1.4 or less.

36. 36. The optoelectronic device of claim 1, further comprising a quantity of deposition material disposed on a surface of the second layer in the non-interface portion.

37. 37. The optoelectronic device of claim 36, wherein the low refractive index layer comprises a patterned coating.

38. An optoelectronic device as described in claim 37, wherein the patterned coating is substantially devoid of a closed coating of the deposited material.

39. 39. An optoelectronic device according to any one of claims 36 to 38, wherein the interfacial portion corresponds to the lateral first portion and the non-interfacial portion corresponds to the lateral second portion where the deposited material forms a closed coating.

40. 40. An optoelectronic device according to any one of claims 36 to 39, wherein the quantity of deposited material comprises at least one grain structure comprising a particulate material.

41. 41. The optoelectronic device of claim 40, wherein the at least one grain structure forms a discontinuous layer between the low refractive index layer and the high refractive index layer.

42. 42. An optoelectronic device according to any one of claims 36 to 41, wherein the deposited material prevents the definition of the refractive index interface in the non-interface portion.

43. 43. An optoelectronic device according to any one of claims 36 to 42, wherein the high refractive index layer covers the deposited material in the non-interface portion.

44. 44. An optoelectronic device according to any one of claims 36 to 43, wherein the second layer surface and the first layer surface are the same.

45. 45. An optoelectronic device according to any one of claims 36 to 44, wherein the low refractive index layer extends into the non-interface portion and the second layer surface is an exposed layer surface of the low refractive index layer therein.

46. 46. ​​The optoelectronic device of any one of claims 1 to 45, wherein the optoelectronic device is adapted to allow EM radiation to engage a surface of the optoelectronic device along an optical path in a first direction that is at an angle to a plane defined by the plurality of transverse axes of the optoelectronic device.

47. 47. The optoelectronic device of claim 46, wherein the EM radiation is emitted by the optoelectronic device and the first direction is a direction in which the EM radiation is extracted from the optoelectronic device.

48. 47. The optoelectronic device of claim 46, wherein the EM radiation is incident on an exterior surface of the optoelectronic device and is at least partially transmitted through the exterior surface, and the first direction is the direction in which the EM radiation is incident on the optoelectronic device.

49. 49. The optoelectronic device of any one of claims 1 to 48, wherein the first emission region is adapted to emit a first EM signal along an optical path in a first direction in which EM radiation is extracted from the optoelectronic device and at an angle to a plane defined by a plurality of the transverse axes of the optoelectronic device.

50. a second emission region in the non-interface portion for emitting a second EM signal along the optical path, the second emission region further comprising a third electrode and a fourth electrode; the third electrode is disposed between the substrate and the at least one semiconductor layer; the at least one semiconductor layer is disposed between the third electrode and the fourth electrode; the non-interface portion is substantially devoid of the low refractive index layer; 50. The optoelectronic device of claim 49, wherein the fourth electrode is disposed between the third electrode and the high refractive index layer.

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