Semiconductor light-emitting device and manufacturing method for the same

Abstract

To provide a semiconductor light-emitting device that has high light output efficiency and whose light output is maintained because reflectivity of a lead frame is not easily degraded by corrosion.SOLUTION: An insulating connecting member 13 that adheres a bottom surface of a light-emitting element 12 to a top surface of a first electrode 11a is light reflective, extends to an area outside of a rectangular outline of the light-emitting element 12, and covers a portion of an area outside of the light-emitting element 12 on the surface of the first electrode 11a.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor light emitting device having a structure in which a semiconductor light emitting element is fixed onto a lead frame with an adhesive member and the periphery is sealed with resin. [Background technology]

[0002] A semiconductor light emitting device having a structure in which a semiconductor light emitting element is fixed on a lead frame by an adhesive member is known. For example, in Patent Documents 1 and 2, a semiconductor light emitting element is fixed on a lead frame by an adhesive member, and a frame body made of a light reflective thermosetting resin formed by transfer molding is mounted at a position separated by a predetermined distance from the semiconductor light emitting element. A semiconductor light emitting device having a structure in which a transparent resin containing a phosphor material is filled between the semiconductor light emitting element and the frame body is disclosed.

[0003] In a semiconductor light-emitting device having such a structure, the light emitted from the semiconductor light-emitting element is partially reflected by the frame and partially reflected by the surface of the lead frame and emitted upward. Therefore, in order to improve the efficiency of emission from above, it is disclosed that the surface of the lead frame is plated with a metal such as silver or aluminum to improve the reflection efficiency. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2010-62272 A [Patent Document 2] JP 2006-156704 A Summary of the Invention [Problem to be solved by the invention]

[0005] Silver and aluminum plated lead frames are corroded by oxygen, moisture, nitrogen oxides, sulfur oxides, etc. in the atmosphere, which can reduce the reflectance of the lead frame surface and the light output of the light emitting device. Therefore, by applying gold plating, which has corrosion resistance, the decrease in light reflectance due to corrosion of the lead frame can be prevented, but the gold plated lead frame has a low reflectance of blue light, which reduces the light output of the light emitting device.

[0006] An object of the present invention is to provide a semiconductor light-emitting device that can maintain light output even when the lead frame has a structure in which it is gold-plated to prevent corrosion, and that is less susceptible to the decrease in reflectance caused by corrosion even when the surface of the lead frame is not gold-plated to prevent corrosion. [Means for solving the problem]

[0007] In order to achieve the above object, the semiconductor light emitting device of the present invention includes a resin molded body having a recess, a pair of electrodes arranged in the resin molded body and made of a lead frame with a part of the surface exposed at the bottom of the recess, a light emitting element mounted on a first electrode of the pair of electrodes, and an insulating connecting member that bonds the bottom surface of the light emitting element to the upper surface of the first electrode. The connecting member is light reflective. The connecting member extends to an area outside the rectangular outline of the light emitting element and covers a part of the area outside the light emitting element on the surface of the first electrode. Effect of the Invention

[0008] According to the present invention, a portion of the light emitted from the side of the light-emitting element is reflected by a light-reflective connecting member that extends outward beyond the light-emitting element, so that light output can be maintained even in a structure in which the lead frame is gold-plated to prevent corrosion, and even in a structure in which the lead frame is not gold-plated to prevent corrosion, it is less susceptible to the decrease in reflectance caused by corrosion of the lead frame surface, and a semiconductor light-emitting device in which light output can be maintained can be provided. [Brief description of the drawings]

[0009] [Figure 1] 1A, 1B, 1C and 1D are a top view, a side view of a long side, a side view of a short side and a back view of the semiconductor light emitting device of the first embodiment, respectively, and FIG. 1E is a cross-sectional view. [Diagram 2] FIG. 2(a) is a top view of an example of a light emitting element of the semiconductor light emitting device of the first embodiment, and FIG. [Diagram 3] 1(a) and 1(b) are diagrams illustrating the directivity of a light-emitting element of the semiconductor light-emitting device of the first embodiment. [Figure 4] 1(a) and 1(b) are a top view and a cross-sectional view, respectively, of a portion of the semiconductor light-emitting device of the first embodiment. [Diagram 5] FIG. 1(a) is a top view of a lead frame for the semiconductor light emitting device of the first embodiment, and (b) to (d) are cross-sectional views of the lead frame. [Figure 6] 1 is a flow diagram showing a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 7] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 8] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 9] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 10] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 11] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 12] 1(a) to 1(c) and 1(e) are cross-sectional views illustrating the manufacturing process of the semiconductor light emitting device 1 of the first embodiment, and 1(d) is a top view. [Figure 13] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 14] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 15] 1A to 1C are top views illustrating a manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 16]1 is a table showing the optical output of the semiconductor light emitting devices according to the first embodiment and the first comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A semiconductor light emitting device according to one embodiment of the present invention will be described below.

[0011] (Embodiment 1) The configuration of the semiconductor light emitting device 1 of the first embodiment will be described with reference to Figs. 1 to 5. Figs. 1(a), (b), (c) and (d) are a top view, a side view of a long side, a side view of a short side and a back view of the semiconductor light emitting device 1, respectively, and Fig. 1(e) is a cross-sectional view. Fig. 2(a) is a top view of an example of a light emitting element, and Fig. 2(b) is a cross-sectional view. Figs. 3(a) and (b) are diagrams showing the directivity of the light emitting element. Figs. 4(a) and (b) are a top view and a cross-sectional view of a part of the semiconductor light emitting device 1, and also show the optical path. Figs. 5(a) to (d) are a top view and a cross-sectional view of a lead frame. Note that Figs. 1, 2, 4 and 5 are hatched in the top views to make the structure easier to understand.

[0012] As shown in FIG. 1, the semiconductor light-emitting device 1 of embodiment 1 is configured to include a frame body 10 which is a resin molded body, a pair of electrodes 11a, 11b formed from a lead frame, a light-emitting element 12, an insulating adhesive member 13, and a sealing member 15.

[0013] The frame 10 has a recess in the center. A pair of electrodes 11a, 11b are disposed within the frame 10, and a portion of the surface is exposed from the bottom of the recess. The frame 10 covers a portion of the back side of the electrodes 11a, 11b, and is also filled between the electrodes 11a and 11b to insulate them from each other. The frame 10 has a rectangular shape when viewed from above, and the four outer surfaces of the frame 10 are perpendicular to the main planes of the electrodes 11a, 11b. On the outer surfaces of the long sides of the frame 10, the end surfaces of the first electrode 11a and the second electrode 11b are located on the same plane as the outer surfaces of the frame 10.

[0014] The first electrode 11a of the pair of electrodes 11a and 11b is a cathode, and the second electrode 11b is an anode. The surfaces of the pair of electrodes 11a and 11b are plated with gold (Au), which is corrosion-resistant and has a reflective property of having a high reflectance of light with a longer wavelength than blue.

[0015] The light emitting element 12 is a semiconductor light emitting element that emits blue light having a dominant wavelength of, for example, 440 nm to 460 nm, and is mounted on the first electrode 11a of a pair of electrodes 11a, 11b exposed at the bottom of the recess.

[0016] The adhesive member 13 has a reflectivity that reflects light in the visible light band, and is disposed between the bottom surface of the light emitting element 12 and the upper surface of the first electrode 11a to bond them together. Furthermore, the adhesive member 13 has a shape that extends from between the bottom surface of the light emitting element 12 and the upper surface of the first electrode 11a to an area outside the rectangular outline of the light emitting element 12. As a result, the adhesive member 13 that extends to the area outside the light emitting element 12 covers a part of the area outside the light emitting element 12 on the surface of the first electrode 11a.

[0017] An n-side electrode pad (cathode) 21a and a p-side electrode pad (anode) 21b, which are element electrodes, are provided on the upper surface of the light-emitting element 12. One end of a first bonding wire 14a is connected to the n-side electrode pad 21a. The other end of the first bonding wire 14a is connected to a region of the upper surface of the first electrode 11a that is not covered by the adhesive member 13. In addition, one end of a second bonding wire 14b is connected to the p-side electrode pad 21b. The other end of the second bonding wire 14b is connected to the upper surface of the second electrode 11b. As a result, a driving current is supplied to the light-emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b.

[0018] The sealing member 15 is filled in the recess of the frame 10 so as to bury the light emitting element 12 and the first and second bonding wires 14a and 14b.

[0019] The sealing member 15 is a resin transparent to the light emitted by the light emitting element 12, with a light conversion member dispersed in it. The light conversion member absorbs a portion of the light emitted from the light emitting element 12 and emits light with a longer wavelength than the absorbed light, and is, for example, a phosphor that emits yellow light that is the complementary color of the blue light emitted by the light emitting element 12. The portion (upper surface) of the sealing member 15 exposed from the recess of the frame 10 is the light output surface FO of the light emitting device 1.

[0020] (Function of each part when emitting light) When a driving current is supplied to the light-emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b, the light-emitting element 12 emits primary light from the top surface and secondary light from the side surfaces (see FIG. 3).

[0021] 3(a), the primary light is emitted upward from the top surface of the light-emitting element 12. The secondary light is emitted from each of the four side surfaces of the light-emitting element 12. The secondary light is light (secondary light) that is guided in the in-plane direction within the growth substrate of the light-emitting element 12, and has high intensity in the axial direction perpendicular to the side surfaces and passing through the center of each side of the light-emitting element 12.

[0022] As shown in FIG. 4(b), the primary light (E1, E3) is emitted upward from the light-emitting element 12, a portion (E1) passes through the sealing member 15 and is emitted upward as is, and the other portion (E3) is irradiated to the wavelength conversion member, has its wavelength converted by the wavelength conversion member, passes through the sealing member 15 and is emitted upward.

[0023] On the other hand, of the secondary light beams (E2, E4), secondary light beam E2 emitted from the side surface of the light-emitting element 12 obliquely downward is reflected by the surface of the adhesive member 13 of the light-emitting element 12 and travels upward, as shown in Fig. 4(b). On the way upward, part of the secondary light beam E2 has its wavelength converted by the wavelength conversion member, and part of the secondary light beam E2 is further reflected by the frame 10 and travels upward.

[0024] Since the secondary light E4 is emitted from the light-emitting element 12 diagonally upward, it does not reach the adhesive member 13, passes through the sealing member 15, and part of it has its wavelength converted by the wavelength conversion member and travels upward directly or is reflected by the frame body 10.

[0025] The phosphor particles excited by the light emitted from the light emitting element 12 emit yellow light in all directions of the phosphor. At this time, the light P3 emitted upward is emitted from the light output surface FO of the light emitting device 1, whereas the light P4 (yellow light) emitted downward is reflected by the surfaces of the adhesive member 13 and the first and second electrodes 11a, 11b, and is emitted from the light output surface FO of the light emitting device 1.

[0026] From the above explanation, it is possible to expect the same effect even when the sealing member 15 does not include a wavelength conversion member, or even when all of the light emitted from the light emitting element 12 is converted by the wavelength conversion member.

[0027] Thus, in the semiconductor light-emitting device 1 of this embodiment 1, the secondary light emitted from the side surface of the light-emitting element 12 and emitted diagonally downward is reflected by the adhesive member 13, and is therefore not affected by the reflection characteristics of the first electrode 11a and the second electrode 11b, which are plated with a corrosion-resistant metal (here, gold plating), and the light output of the semiconductor light-emitting device 1 can be improved.

[0028] Furthermore, by setting the light (fluorescence) emitted from the light conversion member dispersed in sealing member 15 to a wavelength with high reflectance in the reflection characteristics of the corrosion-resistant metal plating, the light output of semiconductor light emitting device 1 can be improved.

[0029] (Shape and material of adhesive material) The shape of the adhesive member 13 for improving the reflection efficiency of the secondary light will be described in detail below.

[0030] The adhesive member 13 is not only positioned below the light-emitting element 12 to bond the light-emitting element 12 to the upper surface of the first electrode 11a, but also extends outside the rectangular outline of the light-emitting element 12 and reflects secondary light emitted from the side surface of the light-emitting element 12.

[0031] 1(a), the peripheral shape of the adhesive member 13 is a rectangle with rounded corners, and is larger than the light-emitting element 12. When viewed from above, the peripheral shape of the adhesive member 13 is a sector shape (an isosceles triangle with rounded corners) with one side of the light-emitting element 12 as its base, or a parabola.

[0032] In other words, the adhesive member 13 and the light emitting element 12 are aligned at the same center O, and the corners of the adhesive member 13 are offset by 45 degrees from the corners of the light emitting element 12. The peripheral shape of the adhesive member 13 does not have to be a perfect rectangle with rounded corners, and may be a rectangle with gently curved sides that bulge outward.

[0033] That is, the distance from one side of the rectangular outer shape of the light emitting element 12 to the periphery of the adhesive member is greatest at the center of the side of the light emitting element 12 and becomes smaller toward both ends of the side.

[0034] Moreover, the periphery of the adhesive member 13 has a curved shape in a predetermined range including the position where the distance from one side of the light emitting element 12 is the greatest, and forms a rounded corner of the adhesive member 13.

[0035] In other words, the periphery of the adhesive member 13 protrudes outward most at the center of the four sides of the light emitting element 12, and is closest to the light emitting element 12 at the corner positions of the light emitting element 12.

[0036] By forming the adhesive member 13 in the above-described shape, it is possible to efficiently reflect the secondary light having the intensity distribution shown in Fig. 3(b) of the light emitting element 12. Also, it is possible to ensure bonding spaces BS that are not covered by the adhesive member 13 in the first electrode 11a and the second electrode 11b for connecting the bonding wires 14a and 14b to the first electrode 11a and the second electrode 11b.

[0037] The total area of ​​the adhesive member 13 is preferably at least twice the area of ​​the bottom surface of the light emitting element 12.

[0038] Specifically, if the distance from the center O of the light-emitting element 12 to the side is L1 (= 1 / 2 the length of one side), and the distance from the center O to the corner of the adhesive member 13 (intersection point X of the imaginary extension lines of the adjacent sides of the adhesive member 13) is L2, the adhesive member 13 has a length of (2·(2L1) 2 ≦(√2·2L) 2 ) is desirable to satisfy the above relationship. The upper limit is the area where the bonding space BS does not disappear, or 3 times or less.

[0039] Furthermore, when the adhesive member 13 and the light emitting element 12 are viewed from above, it is desirable that the outline of the light emitting element 12 be located inside the periphery of the adhesive member 13. In particular, it is desirable that the periphery of the adhesive member 13 be located outside the corner of the light emitting element 12 by a width W that is 0.1 times or more the length of one side of the light emitting element 12 (0.1·2L1≦W).

[0040] Therefore, as shown in FIG. 4(a), it is desirable that the distance L3 (the distance between the center O and the intersection point X) from the light-emitting element 12 to the periphery of the adhesive member 13 at the center of one side of the light-emitting element 12 be equal to or greater than the distance L1 (= 1 / 2 the length of one side) from the center O of the light-emitting element 12 to the side.

[0041] In addition, the area (bottom surface) of the adhesive member 13 located below the light-emitting element 12 has a thickness that allows the light-emitting element 12 to be adhered to the first electrode 11a with a predetermined strength, and also has a thickness that allows light emitted from the bottom surface of the light-emitting element 12 to be reflected and re-entered into the light-emitting element 12.

[0042] As shown in Fig. 4(b), the cross-sectional shape of the adhesive member 13 in the region outside the light emitting element 12 has a convex shape. That is, the cross-sectional shape of the adhesive member 13 extends from the position in contact with the side surface of the light emitting element 12 so as to rise above the plane parallel to the surface of the first electrode 11a, and becomes lower at the periphery of the adhesive member 13 until it reaches the surface of the first electrode 11a. In addition, the height of the portion of the adhesive member 13 in contact with the side surface of the light emitting element 12 is set to be 1 / 3 or less of the height of the light emitting element 12. This makes it possible to improve the light output of the light emitting device 1 without blocking the secondary light emitted from the side surface of the light emitting element 12.

[0043] The adhesive member 13 is made of a composite resin in which light-reflective particles are dispersed in a light-transmitting medium resin.

[0044] The medium resin may be a translucent polysilsesquioxane (siloxane compound) resin having a hardness that does not reduce the bonding pressure during wire bonding performed after the light emitting element 12 is bonded to the first electrode 11a of the lead frame (first and second electrodes 11a, 11b). In addition to this resin, a resin of a silsesquioxane derivative, which is a trioxysilane system, may also be used.

[0045] The light-reflective particles may be titanium oxide particles with a particle size of 5 nm to 500 nm. These particles reflect blue to red visible light (diffuse reflection). By making the particle size distribution of the light-reflective particles wider than the particle size in the Mie scattering region (200 nm to 300 nm in visible light), small particles can be inserted between large particles, increasing the hardness of the adhesive member 13. Also, a high reflectance can be obtained. Note that alumina (Al2O3), zinc oxide (ZnO), etc. may also be used as the light-reflective particles.

[0046] (Shape and material of the first and second electrodes) The first and second electrodes 11a, 11b (lead frames) have the shapes shown in Figures 1 and 5, and the core material is copper (Cu) or a copper alloy, and the surface is coated with a plating layer (Ni / Au) consisting of a nickel layer and a gold layer laminated in that order. The core material can also be aluminum (Al) or an aluminum alloy, or an iron-nickel alloy (Fe-Ni 42%, Fe-Ni 29%-Co 17%).

[0047] (Frame shape and material) The frame 10 is formed by molding a resin having light-reflective particles dispersed therein into a shape having a recess in the center as shown in FIG. 1, using a technique such as insert molding.

[0048] As the resin, for example, a silicon dioxide silicone resin, an epoxy resin, or an acrylic resin can be used.

[0049] As the light-reflective particles, for example, titanium oxide particles having a particle size of 200 nm to 300 nm can be used. In addition, additives such as short fiber glass and nano-silica particles may be added.

[0050] (Shape and material of light-emitting element) The light-emitting element 12 may have any structure as long as it emits light of a desired wavelength from the top and side surfaces and emits blue light. Here, the light-emitting element shown in Fig. 2 that emits blue light is used. The effect of the present invention increases with an increase in the amount of secondary light emitted from the side surfaces of the light-emitting element.

[0051] The light-emitting element 12 in FIG. 2 has a structure in which a transparent substrate (sapphire) is used as the growth substrate 22, and an n-nitride layer as the n-type semiconductor layer 23, a light-emitting layer 24 having a multiple quantum well structure (MQW), a p-nitride layer as the p-type semiconductor layer 25, and a transparent p-side electrode 26 are laminated thereon. A p-side electrode pad (anode) 21b is mounted on a part of the upper surface of the transparent p-side electrode 26. In addition, an n-side electrode pad 21a having the function of an n-side electrode is mounted on a part of the upper surface of the exposed n-type semiconductor layer 23. The region on the upper surface where the p-side electrode pad 21b and the n-side electrode pad 21a are not provided is covered with a protective film 28. In addition, a reflective dielectric multilayer film or a metal element reflection layer 27 may be disposed on the lower surface of the growth substrate 22 as necessary.

[0052] (Sealing material) The sealing member 15 is made by dispersing a wavelength conversion material in a medium resin that transmits the light emitted by the light emitting element 12. Here, a silicone resin is used as the medium resin, and a YAG green-yellow phosphor is used as the wavelength conversion material.

[0053] The medium resin may be any of silicone resin, epoxy resin, acrylic resin, and the like.

[0054] The wavelength conversion member can be selected from those that absorb the blue light emitted by the light emitting element 12, are excited, and emit light with a longer wavelength than the blue-green light. For example, LuAG green phosphor, β-type SiALON green phosphor, CASN red phosphor, S-CASN red phosphor, KFS red phosphor, YAG green-yellow phosphor, orthosilicate green-yellow phosphor, etc. can be used. Cadmium selenide (CdSe)-based nanoparticles, indium phosphide (InP)-based nanoparticles, and indium nitride (InN)-based QD (Quantum Dot) wavelength conversion bodies can also be used. The QD wavelength conversion body may be directly applied to the surface of the light emitting element 12.

[0055] (Manufacturing method) A method for manufacturing the semiconductor light emitting device 1 of the first embodiment will be described with reference to the process diagram of Fig. 6 and Fig. 7 to Fig. 15. Note that an example in which the first and second electrodes 11a, 11b are Au plated will be described here.

[0056] (Step S1: Half-etch process) Prepare a copper plate as shown in Figure 7, and form a resist mask on the back of the copper plate so that the area to be half-etched is exposed as shown in Figure 8. Using an etching solution, etch the copper plate until it is about half its thickness.

[0057] (Step S2: Die-cutting process) 9, a predetermined area of ​​the copper plate is punched out and removed with a die to form areas that will become the first and second electrodes 11a, 11b, thereby forming a lead frame in which a plurality of first and second electrodes 11a, 11b are continuous.

[0058] Instead of punching, a lead frame may be formed by removing a predetermined area by etching. In this case, a resist mask is formed to cover the areas of the first and second electrodes 11a and 11b. The areas not covered by the resist mask are etched with an etching solution until the copper plate is removed.

[0059] (Step S3: Plating process) As shown in Figure 10, the surface of the lead frame is plated with Ni and then Au.

[0060] (Step S4: Frame Forming Process) The lead frame is sandwiched between metal molds, and resin with dispersed light-reflective particles is heated and poured into the mold, followed by hardening by insert molding to form the frame 10 as shown in FIG.

[0061] (Step S5: Mounting process) 12(a), an uncured resin having light-reflective particles dispersed therein is applied to the upper surface of the first electrode 11a to become the adhesive member 13. At this time, a predetermined amount of the resin is applied using a nozzle or the like so that when the adhesive member 13 is pressed and spread by the light-emitting element 12, its area can expand to about twice the area of ​​the light-emitting element 12.

[0062] As shown in Fig. 12(b), the light emitting element 12 is held by a tool and slowly placed on the uncured adhesive material 13 and pressed. As a result, as shown in Figs. 12(c) and (d), the uncured adhesive material 13 is pushed outward beyond the light emitting element 12, rather than just below the light emitting element 12. At this time, the cross-sectional shape of the adhesive material 13 in the area outside the light emitting element 12 becomes convex. Note that if ultrasonic vibration is applied at this time, the cross-sectional shape can be pushed outward while suppressing the convex part from swelling. Alternatively, the same effect can be obtained by roughening the surface to which the adhesive material 13 is applied by blasting.

[0063] Next, the adhesive member 13 is cured by heating (for example, at 150° C. for 30 minutes) to form the adhesive member 13 that extends to the outside of the light emitting element 12 in a predetermined shape.

[0064] This allows the adhesive member 13 and the center O of the light-emitting element 12 to be positioned approximately the same. In addition, the adhesive member 13 can be formed into a shape with rounded corners when viewed from above, with the corner positions shifted by 45 degrees from the corner positions of the light-emitting element 12.

[0065] Next, as shown in FIG. 12(e), bumps are formed on the upper surfaces of the p-side electrode pad 21b and the n-side electrode pad 21a of the light-emitting element 12, and then the first and second bonding wires 14a, 14b are wire-bonded to connect the p-side electrode pad 21b and the n-side electrode pad 21a to the first and second electrodes 11a, 11b via the first and second bonding wires 14a, 14b.

[0066] Thereby, as shown in FIG. 13, the light emitting element 12 is mounted on the first and second electrodes 11a, 11b, and the adhesive member 13 is extended to the outside of the light emitting element 12 to form a predetermined shape.

[0067] (Step S6: Sealing process) Uncured sealing material 15 with phosphor dispersed therein is injected into the recess of frame 10, burying the periphery of light-emitting element 12, the exposed upper surface of adhesive material 13, the exposed upper surfaces of first and second electrodes 11a, 11b, and first and second bonding wires 14a, 14b.

[0068] Thereafter, the sealing member 15 is cured by a heat treatment (for example, at 150° C. for 30 to 150 minutes).

[0069] As a result, a continuous body in which a plurality of semiconductor light emitting devices 1 are connected by the lead frame and frame 10 is formed as shown in FIG.

[0070] (Step S7: Singulation process) As shown in FIG. 15, each semiconductor light emitting device 1 is separated by dicing along its outline.

[0071] (Step S8: Power check process) Finally, a power supply check is performed on each semiconductor light emitting device 1, and the semiconductor light emitting device 1 is completed.

[0072] In this manner, in the manufacturing process of the semiconductor light-emitting device 1 of this embodiment, the amount of adhesive material 13 to be applied is designed in advance, and the adhesive material 13 is spread out by the light-emitting element 12 in an uncured state, so that the adhesive material 13 and the light-emitting element 12 have the same position of center O, and the adhesive material 13 can be formed into a rectangular shape with rounded corners whose corner positions are shifted by 45 degrees from the corner positions of the light-emitting element 12.

[0073] Comparative Example 1 16, the semiconductor light emitting device of Comparative Example 1 was prepared with an amount (appropriate adhesive amount) of adhesive member 13 that provides sufficient adhesive strength to adhere light emitting element 12 to the upper surface of first electrode 11a. In this amount, adhesive member 13 protrudes from the side surface of light emitting element 12 by a width approximately equal to the height of light emitting element 12 when viewed from above. Such a semiconductor light emitting device was manufactured by applying an appropriate amount of uncured adhesive member 13 to the upper surface of first electrode 11a in the mounting process of step S5.

[0074] (Light output of embodiment 1 and comparative example 1) When the light output of the semiconductor light emitting device of embodiment 1 and the semiconductor light emitting device of comparative example 1 was measured, the semiconductor light emitting device of embodiment 1 had a light output of 3,300 mcd, while the semiconductor light emitting device of comparative example 1 had a light output of 3,000 mcd, confirming that the light output of the semiconductor light emitting device 1 of this embodiment was more than 10% higher.

[0075] This result is because, compared to the semiconductor light-emitting device of this embodiment 1, in the semiconductor light-emitting device of comparison example 1, a portion of the secondary light emitted from the side surface of the light-emitting element 12 is absorbed by the surface (Au) of the first electrode 11a, resulting in a decrease in the light output of the light-emitting device.

[0076] (Embodiment 2) The semiconductor light emitting device of embodiment 2 has a structure in which the outermost surfaces of the first and second electrodes 11a, 11b of the semiconductor light emitting device 1 of embodiment 1 are made of Ag instead of Au. Such a semiconductor light emitting device can be manufactured by plating the first and second electrodes 11a, 11b with Ni / Ag in the plating process of step S3.

[0077] Comparative Example 2 The semiconductor light emitting device of Comparative Example 2 has a structure in which the outermost surfaces of the first and second electrodes 11a, 11b of the semiconductor light emitting device 1 of Embodiment 1 are replaced with Ag from Au, and the adhesive member 13 protrudes from the side surface of the light emitting element 12 by a width approximately equal to the height of the light emitting element 12 in a top view. In other words, the outermost surfaces of the first and second electrodes 11a, 11b of the semiconductor light emitting device of Comparative Example 1 are replaced with Ag from Au. Such a semiconductor light emitting device can be manufactured by plating the first and second electrodes 11a, 11b with Ni / Ag in the plating process of step S3, and applying an appropriate amount of uncured adhesive member 13 to the upper surface of the first electrode 11a in the mounting process of step S5.

[0078] (Light output of embodiment 2 and comparative example 2) The semiconductor light emitting device of the second embodiment and the semiconductor light emitting device of the second comparative example were corroded in a test conforming to the sulfurization test JEITA ED-4912A, and the light output before and after the corrosion was measured. The results are shown in Table 1.

[0079] [Table 1]

[0080] As shown in Table 1, the reflectance of the Ag-plated first and second electrodes 11a, 11b (lead frames) in the visible light band is high, but the reflectance decreases as the electrodes turn black due to sulfurization (corrosion). However, the semiconductor light emitting device of embodiment 2 maintained 85% of the light output before corrosion even after corrosion due to sulfurization. In contrast, the semiconductor light emitting device of comparative example 2 had a reduced light output of 58% of the light output before corrosion.

[0081] The decrease in the optical output of the semiconductor light-emitting device of embodiment 2 is suppressed to 85% because the adhesive member 13 extends from the side surface of the light-emitting element 12, and thus the adhesive member 13 maintains reflection of the secondary light emitted from the side surface of the light-emitting element 12. In other words, the attenuation can be limited to an amount corresponding to the area of ​​the first and second electrodes 11a, 11b corroded (blackened) by sulfurization in contact with the sealing member 15.

[0082] In this way, in the semiconductor light-emitting device of the second embodiment, the secondary light emitted from the side surface of the light-emitting element 12 and directed obliquely downward is reflected by the adhesive member 13, so that even if the first electrode 11a and the second electrode 11b are corroded by oxygen, moisture, nitrogen oxides, sulfur oxides, or the like in the atmosphere, they are not easily affected by a decrease in the reflectance of their surfaces. Therefore, a decrease in the light output of the semiconductor light-emitting device can be suppressed.

[0083] As described above, in the semiconductor light emitting device of this embodiment, a part of the light emitted from the side surface of the light emitting element is reflected by the light reflective connecting member extending outward from the light emitting element. Therefore, even if the lead frame has a structure in which gold plating is applied to prevent corrosion, the light output can be maintained, and even if the lead frame has a structure in which gold plating is not applied to prevent corrosion, the semiconductor light emitting device is not easily affected by the decrease in reflectance due to corrosion of the lead frame surface and can maintain the light output.

[0084] The technology of the semiconductor light emitting device of this embodiment can be generally used for EMC (Epoxy Molding Compound) packages, SMC (Silicon Molding Compound) packages, and the like. [Explanation of symbols]

[0085] O center W width 1. Semiconductor light-emitting device 10 Frame 11a electrode 11b Electrode 12 Light emitting element 13 Adhesive materials 14a First bonding wire 14b Second bonding wire 15 Sealing member 21a N-side electrode pad 21b p-side electrode pad 22 Growth Substrate 23 n-type semiconductor layer 24 Light-emitting layer 25 p-type semiconductor layer 26 p side electrode 27 Element Reflective Layer 28 Protective film

Claims

1. A resin molded body having a recess, A pair of electrodes made of a lead frame disposed within the resin molded body, with a part of the surface exposed at the bottom of the recess, A light-emitting element mounted on a first electrode among the pair of electrodes exposed at the bottom of the recess, An insulating connection member that adheres the bottom surface of the light-emitting element and the upper surface of the first electrode, The connection member is light-reflective, The connection member has a shape that extends to a region outside the rectangular outer shape of the light-emitting element, covering a part of the region on the surface of the first electrode outside the light-emitting element, The outer shape of the connection member is a rectangle with rounded corners, larger than the light-emitting element, and the center positions of the connection member and the light-emitting element coincide, and the corner positions of the connection member are shifted by 45 degrees from the corner positions of the light-emitting element. A semiconductor light-emitting device characterized by this.

2. The semiconductor light-emitting device according to Claim 1, wherein the distance from one side of the rectangular outer shape of the light-emitting element to the peripheral edge of the connection member is the largest at the central part of one side of the light-emitting element and becomes smaller as it approaches both ends of the side. A semiconductor light-emitting device characterized by this.

3. The semiconductor light-emitting device according to Claim 1, wherein the total area of the connection member is 2 times or more the area of the bottom surface of the light-emitting element. A semiconductor light-emitting device characterized by this.

4. The semiconductor light-emitting device according to Claim 1, wherein the cross-sectional shape of the region outside the light-emitting element of the connection member has a convex shape. A semiconductor light-emitting device characterized by this.

5. The semiconductor light-emitting device according to Claim 1, wherein light-reflective particles are dispersed in the connection member. A semiconductor light-emitting device characterized by this.

6. The semiconductor light-emitting device according to Claim 1, wherein the upper surfaces of the pair of electrodes exposed at the bottom of the recess are silver-plated. A semiconductor light-emitting device characterized by this.

7. The semiconductor light-emitting device according to Claim 1, wherein the upper surfaces of the pair of electrodes exposed at the bottom of the recess are gold-plated. A semiconductor light-emitting device characterized by this.

8. The semiconductor light-emitting device according to Claim 1, wherein a pair of element electrodes are provided on the upper surface of the light-emitting element, One of the pair of element electrodes is connected via a conductive wire to a portion of the surface of the first electrode that is not covered by the connection member, A semiconductor light-emitting device, wherein the other of the pair of element electrodes is connected to the surface of the second electrode among the pair of electrodes via the conductive wire.

9. The semiconductor light-emitting device according to claim 1, wherein between the resin molded body and the light-emitting element, it is sealed with a sealing resin that transmits light emitted by the light-emitting element, and the sealing resin covers the connecting member extending outside the light-emitting element and the surface of the electrode not covered by the connecting member. A semiconductor light-emitting device characterized by this.

10. The semiconductor light-emitting device according to claim 1, wherein the sealing resin contains a light conversion member that absorbs a part of the light emitted from the light-emitting element and emits light having a wavelength longer than the absorbed light. A semiconductor light-emitting device characterized by this.

11. A step of applying a predetermined amount of uncured light-reflective resin onto an electrode composed of a lead frame disposed within a resin molded body having a recess and having a part of its surface exposed at the bottom of the recess; Mounting a light-emitting element on the uncured light-reflective resin, spreading the uncured light-reflective resin by the light-emitting element, and having a shape extending to a region outside the rectangular outer shape of the light-emitting element, covering a part of the region outside the light-emitting element on the surface of the electrode. A step of forming a connecting member and at the same time adhering the bottom surface of the light-emitting element and the upper surface of the first electrode; having The connecting member formed in the adhering step has an outer shape of a rectangle with rounded corners, is larger than the light-emitting element, the center positions of the connecting member and the light-emitting element coincide, and the corner positions of the connecting member are shifted by 45 degrees from the corner positions of the light-emitting element. A method for manufacturing a semiconductor light-emitting device, characterized by this.

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