Photoelectric conversion device and photoelectric conversion system

Abstract

To reduce noise and power consumption of a photoelectric conversion device.SOLUTION: A photoelectric conversion device includes a first substrate on which a plurality of photoelectric conversion units are arranged, and a second substrate including a plurality of floating diffusion units connected to the plurality of photoelectric conversion units, a first switch that connects a first floating diffusion unit and a second floating diffusion unit from among the plurality of floating diffusion units, and a plurality of amplification transistors that output signals based on the potentials of the plurality of floating diffusion units.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a photoelectric conversion device and a photoelectric conversion system using the photoelectric conversion device. [Background technology]

[0002] Patent document 1 discloses a solid-state imaging element consisting of a three-layer stack having a plurality of pixels that perform photoelectric conversion on a first substrate, a readout circuit that outputs signals from the pixels on a second substrate, and a logic circuit that processes pixel signals on a third substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2020 / 105713 Summary of the Invention [Problem to be solved by the invention]

[0004] When pixel signals are added or averaged in the solid-state imaging device described in Patent Document 1, the signals read out to the vertical signal lines need to be processed, but no consideration has been given to reducing the power consumption associated with this operation. [Means for solving the problem]

[0005] One aspect of the present invention relates to a photoelectric conversion device comprising: a first substrate on which a plurality of photoelectric conversion units are arranged; a plurality of floating diffusion units connected to the plurality of photoelectric conversion units; a first switch connecting a first floating diffusion unit and a second floating diffusion unit among the plurality of floating diffusion units; a second substrate on which a plurality of amplifying transistors are arranged, the second substrate outputting a signal based on the potential of the plurality of floating diffusion units; a first signal line connected to a first amplifying transistor among the plurality of amplifying transistors; a first signal readout circuit connected to the first signal line; a second signal line connected to a second amplifying transistor among the plurality of amplifying transistors; and a second signal readout circuit connected to the second signal line, wherein the first signal readout circuit and the second signal readout circuit are in an operating state when the first switch is in an off state, and the first signal readout circuit is in a non-operating state when the first switch is in an on state.

[0006] Another aspect of the present invention is a photoelectric conversion device comprising: a first substrate on which a plurality of photoelectric conversion units are arranged; a plurality of floating diffusion units connected to the plurality of photoelectric conversion units; a second substrate on which a first switch connects a first floating diffusion unit and a second floating diffusion unit among the plurality of floating diffusion units; and a plurality of amplifying transistors that output a signal based on the potential of the plurality of floating diffusion units. Effect of the Invention

[0007] According to the present invention, it is possible to reduce power consumption when pixel signals are added or averaged. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of a photoelectric conversion device according to a first embodiment. [Diagram 2] 1 is an equivalent circuit diagram of a photoelectric conversion device according to a first embodiment. [Diagram 3] 1 is a cross-sectional view of a photoelectric conversion device according to a first embodiment. [Figure 4] 1 is a plan view of a photoelectric conversion device according to a first embodiment. [Diagram 5] FIG. 2 is a diagram illustrating a state during normal operation of the photoelectric conversion device according to the first embodiment. [Figure 6] FIG. 2 is a diagram illustrating a state during an addition or averaging operation of the photoelectric conversion device according to the first embodiment. [Figure 7] FIG. 11 is a diagram illustrating a state during an adding or averaging operation of a photoelectric conversion device according to a second embodiment. [Figure 8] FIG. 13 is a diagram illustrating an example of a circuit configuration of a photoelectric conversion device according to a third embodiment. [Figure 9] FIG. 11 is a diagram illustrating a state during an adding or averaging operation of a photoelectric conversion device according to a third embodiment. [Figure 10] FIG. 13 is a diagram illustrating a state during an adding or averaging operation of a photoelectric conversion device according to a fourth embodiment. [Figure 11] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a fifth embodiment. [Figure 12] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a sixth embodiment. [Figure 13] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a seventh embodiment. [Figure 14] FIG. 13 is a functional block diagram of a photoelectric conversion system according to an eighth embodiment. [Figure 15] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a ninth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The following embodiments are intended to embody the technical ideas of the present invention, and are not intended to limit the present invention. The sizes and positional relationships of the components shown in the drawings may be exaggerated to clarify the description. In the following description, the same components may be designated by the same reference numerals, and the description may be omitted.

[0010] In the following description, the case where the signal charge is an electron will be described as an example. Therefore, the first conductivity type semiconductor region in which the majority carriers are the same conductivity type as the signal charge is an N-type semiconductor region, and the second conductivity type semiconductor region is a P-type semiconductor region. The present invention is also valid when the signal charge is a hole. In this case, the first conductivity type semiconductor region in which the majority carriers are the same conductivity type as the signal charge is a P-type semiconductor region, and the second conductivity type semiconductor region is an N-type semiconductor region.

[0011] In this specification and claims, when the term "impurity concentration" is used simply, it means the net impurity concentration compensated by the impurity of the opposite conductivity type. In other words, "impurity concentration" refers to the NET doping concentration. A region in which the P-type added impurity concentration is higher than the N-type added impurity concentration is a P-type semiconductor region. Conversely, a region in which the N-type added impurity concentration is higher than the P-type added impurity concentration is an N-type semiconductor region. In addition, the conductivity types of the semiconductor regions and wells and the dopants to be implanted described in the embodiments described below are examples, and are not limited to only the conductivity types and dopants described in the embodiments. The conductivity types and dopants described in the embodiments can be changed as appropriate. Furthermore, the potential of the semiconductor regions and wells is changed as appropriate in accordance with this change.

[0012] In this specification, the term "planar view" refers to a view from a direction perpendicular to the light incidence surface or a surface facing the light incidence surface of a semiconductor substrate, which will be described later. Also, the term "cross section" refers to a surface in a direction perpendicular to the light incidence surface of the semiconductor substrate. Note that, when the light incidence surface of the semiconductor substrate is a rough surface when viewed microscopically, the planar view is defined based on the light incidence surface of the semiconductor substrate when viewed macroscopically.

[0013] In this specification, the depth direction is the direction from the light incident surface (first surface) of the semiconductor substrate toward the surface (second surface) on which the transistors are arranged.

[0014] In addition, in each of the embodiments described below, an image pickup device will be mainly described as an example of a photoelectric conversion device, but each of the embodiments is not limited to an image pickup device and can be applied to other examples of photoelectric conversion devices, such as a distance measuring device (a device for measuring distance using focus detection or TOF (Time Of Flight)), a photometric device (a device for measuring the amount of incident light), etc.

[0015] In the following embodiments, the connection between elements of a circuit may be described. In this case, even if another element is interposed between the elements of interest, the elements of interest are treated as being connected to each other unless otherwise specified. For example, assume that element A is connected to one node of a capacitive element C having multiple nodes, and element B is connected to the other node. Even in such a case, element A and element B are treated as being connected to each other unless otherwise specified.

[0016] (First embodiment) A first embodiment of the present invention will be described with reference to Figs. 1 to 6. Fig. 1 is a schematic diagram of a photoelectric conversion device 400 according to the present invention. The photoelectric conversion device is a semiconductor device IC. The photoelectric conversion device 400 according to this embodiment can be used as, for example, an image sensor, a photometry sensor, or a distance measurement sensor. In the following, a CMOS image sensor will be described as an example.

[0017] The photoelectric conversion device 400 according to the first embodiment is configured to include three layers: a first substrate 100, a second substrate 200, and a third substrate 300. The first substrate 100 and the second substrate 200 may be in the form of chips obtained by dicing a wafer after stacking, or may be in the form of a wafer.

[0018] A plurality of pixels 101 are arranged in an array on the semiconductor layer of the first substrate 100. Fig. 1 shows an example of a pixel array in which the pixels 101 are arranged in 6 columns x 4 rows for simplicity's sake, but the number of pixels 101 constituting the pixel array is not limited to this. For example, the pixels 101 may be arranged in several thousand rows x several thousand columns as in a CMOS image sensor used in a general digital camera, or the pixel array 20 may be formed by a plurality of pixels 10 arranged in one row.

[0019] A pixel circuit 201, a signal readout circuit 202, a vertical signal line 203, and a vertical scanning circuit 204 are arranged on the second substrate 200. A signal based on a pair of charges photoelectrically converted in the pixel 101 is read out to the signal readout circuit 202 via the pixel circuit 201 and the vertical signal line 203. A plurality of pixels 101 arranged in one column of the pixel array are connected to one vertical signal line 203, and a signal is read out from the pixels 101 in a row selected by the vertical scanning circuit 204.

[0020] A column signal processing circuit 301, a horizontal scanning circuit 302, a timing generator (TG) 303, and an output circuit 304 are arranged on the third substrate 300. The output of the signal readout circuit 202 arranged on the second substrate 200 is input to the column signal processing circuit 301 of the third substrate 300. The column signal processing circuit 301 is, for example, an analog-to-digital conversion circuit (AD conversion circuit). The digitally converted signals are sequentially transferred to the output circuit 304 under the control of the horizontal scanning circuit 302, and output to the outside of the photoelectric conversion device 400. The TG 303 generates control signals for the circuit blocks arranged on the second substrate 200 and the third substrate 300.

[0021] In this embodiment, the photoelectric conversion device 400 has a three-layer substrate, but the circuit blocks arranged on the second substrate and the third substrate may be arranged on the same substrate, so that the photoelectric conversion device 400 has a two-layer substrate. The signal readout circuit 202 and the vertical scanning circuit 204 may be arranged on the third substrate 300.

[0022] FIG. 2 is an equivalent circuit diagram of a path from the pixel 101 to the signal readout circuit 202. As shown in FIG.

[0023] The pixel 101 includes a photodiode 102 and a transfer transistor 103. The pixel circuit 201 includes a floating diffusion (hereinafter referred to as "FD") 205, a reset transistor 206, an amplification transistor (source follower transistor) 207, and a selection transistor 208. It also includes an addition switch 209 formed of a transistor.

[0024] The signal read circuit 202 includes a current source 210 and an amplifier circuit 211. If signal amplification is not required, the signal read circuit 202 may be configured with only the current source 210.

[0025] The photodiode 102 generates electric charges by photoelectric conversion. The electric charges generated by the photoelectric conversion are transferred by the transfer transistor 103 to the FD 205 that holds the electric charges. The electric charges determine the electric potential of the FD 205. The FD 205 is connected to the gate of the amplification transistor 207. A signal based on the electric charges held in the FD 205 is amplified by the amplification transistor 207, read out to the vertical signal line 203 via the selection transistor 208, and input to the signal readout circuit 202. A reset transistor 206 for resetting the electric potential of the FD is connected to the FD 205. The vertical signal line 203 is connected to a current source 210 via a current source transistor (not shown), and the current source 210 and the amplification transistor 207 form a source follower circuit.

[0026] 2 shows a planar equivalent circuit diagram, but as shown in FIG 1, the pixels 101 are disposed on the first substrate 100, and the pixel circuits 201, vertical output lines 203, and signal readout circuits 202 are disposed on the second substrate 200. In addition, an addition switch 209 that connects the FD 205 of a pixel circuit to the FD 205 of a pixel circuit in a different pixel column is also disposed on the second substrate 200. When the addition switch 209 is turned on, the signal charges held in the FD 205 of each pixel circuit are added together, and an averaging process is performed to average the signal values.

[0027] Fig. 3 is a cross-sectional view of the photoelectric conversion device of this embodiment. This cross-sectional view shows a cross section of a line passing through the photodiode 102 and the gate of the transfer transistor 103 in the first substrate 100, the second substrate 200, and the third substrate 300. The semiconductor region 104 is the photodiode 102. In other words, the semiconductor region 104 is a photoelectric conversion unit that generates and accumulates signal charges (electrons in this embodiment) in response to incident light. In addition, the semiconductor region 104 is an N-type impurity region. The cross-sectional view of Fig. 3 shows two pixels 101 appearing in one cross section.

[0028] The transfer gate 311 of the transfer transistor 103 controls conduction between the semiconductor region 104 and the semiconductor region 321, which is the region of the FD node 205. The semiconductor region 321 is an N-type semiconductor region. The pixel separation portion 391 is provided between the multiple semiconductor regions 104, and electrically separates the multiple semiconductor regions 104. The pixel separation portion 391 may be configured to include an insulating portion such as silicon oxide, or may be a semiconductor region that forms a potential barrier. Typically, it is a semiconductor region in which charges of the opposite polarity to the signal charge accumulated by the photodiode 102 are the main carriers. A pixel separation layer 281 is provided between the pixel separation portion 391 and the semiconductor region 104. The pixel separation layer 281 plays a role in reducing dark current, especially when the pixel separation portion 391 is provided as an insulating portion. The semiconductor region 321, which is the FD node 205, and the gate 341 of the amplification transistor 207 are connected via a conductor 305. The conductor 305 is configured to mainly include a metal such as tungsten or copper. The conductor 305 is formed penetrating the insulator 251 that separates the semiconductor layer 21 of the second substrate 200. The insulator 251 electrically separates the multiple readout circuits 202 from one another. The insulator 251 is also provided penetrating from the third surface to the fourth surface of the semiconductor layer 21. The third surface is the surface (F3) facing the semiconductor layer 11, and the fourth surface is the surface (F4) facing the third surface. The gate 341 of the amplification transistor 207 is provided on the fourth surface side of the semiconductor layer 21.

[0029] The semiconductor layer 11 of the first substrate 100 has a first surface (F1) on the incident surface side and a second surface (F2) opposite to the first surface. The semiconductor region 221 is a P-type semiconductor region provided in a region on the first surface side (incident surface side) of the semiconductor region 104. The fixed charge film 231 is provided on the first surface of the semiconductor layer 11. The semiconductor region 221 and the fixed charge film 231 reduce dark current entering the semiconductor region 104.

[0030] The microlens ML guides light to the semiconductor region 104. A planarization layer 241 is provided between the microlens ML and the fixed charge film 231. Note that a color filter may be further provided in each of the multiple pixels 101 to perform color separation.

[0031] The first substrate 100, the second substrate 200, and the third substrate 300 are laminated. The second substrate 200 is provided between the first substrate 100 and the third substrate 300. A transistor 381 is provided in the semiconductor layer 31 of the third substrate 300. The second substrate 200 and the third substrate 300 are electrically connected via a connection portion 361. The connection portion 361 is formed of a metal. Typically, the connection portion 361 mainly contains copper. In addition, the connection portion 361 is formed to further contain a barrier metal (titanium, nickel, tantalum, etc.) for suppressing the diffusion of copper.

[0032] Fig. 4 is a diagram showing a plan view of the second surface of the first substrate 100 shown in Fig. 3 as seen from the semiconductor layer 21 side, and a plan view of the second substrate 200 as seen from the third substrate 300 side in the photoelectric conversion device shown in Fig. 1 to Fig. 3. In Fig. 4, members having the same functions as the members shown in Fig. 1 to Fig. 3 are denoted by the same reference numerals as those shown in Fig. 1 to Fig. 3.

[0033] A transfer gate 311 is provided in one semiconductor region 104 which is the photodiode 102. To a gate 341 of the amplification transistor 207 of one readout circuit 202, one semiconductor region 104 and one semiconductor region 321 which is one FD node 205 are connected.

[0034] Further, a well contact 261 is provided in the well region of the semiconductor layer 11 of the first substrate 100 to apply a predetermined potential (typically, a ground potential).

[0035] A gate 341 of the amplifying transistor 207 and a gate 351 of the selection transistor 208 are provided in the semiconductor layer 21 of the second substrate 200. Also provided are a gate 371 of a transistor constituting the addition switch 209 and a gate 331 of the reset transistor 206. Also provided is a well contact 271 that applies a predetermined potential (typically a ground potential) to the well region of the semiconductor layer 21 of the second substrate 200.

[0036] A driving method for performing addition or averaging of pixel signals in this configuration will be described using Figures 5 and 6. Figures 5 and 6 focus on three pixel columns in the pixel array, and the circuit elements in each column are labeled a, b, and c. The pixels 101 are arranged in a matrix, but only one row of pixels 101 is shown for simplicity.

[0037] 5 is a diagram showing the state of the pixel circuit during normal operation of the photoelectric conversion device according to the first embodiment of the photoelectric conversion device according to the present invention. Normal operation refers to the circuit operation when no addition or averaging of pixel signals is performed, in which the signal charge generated in each pixel 101 is converted into a voltage by the FD 205 included in the pixel circuit of each pixel 101 and output to the vertical output line 203.

[0038] The photodiode 102a arranged in the leftmost row a in FIG. 5 is connected to a first signal line 203a via a first floating diffusion FD 205a and a first amplifier transistor 207a. The first signal line 203a is connected to a first signal read circuit 202a including a first current source 210a and a first amplifier circuit 211a. The first signal line 203a is connected to the first current source 210a via a first current source transistor (not shown).

[0039] The photodiode 102b arranged in the center row b of Fig. 5 is connected to a second signal line 203b via a second floating diffusion portion FD 205b and a second amplifier transistor 207b. The second signal line 203b is further connected to a second signal read circuit 202b including a second current source 210b and a second amplifier circuit 211b. The second signal line 203b is connected to the second current source 210b via a second current source transistor (not shown).

[0040] Similarly, the photodiode 102c arranged in column c on the right side of FIG. 5 is connected to a third signal line 203c via a third floating diffusion portion FD 205c and a third amplifier transistor 207c. The third signal line 203c is further connected to a third signal read circuit 202c including a third current source 210c and a third amplifier circuit 211c. The third signal line 203c is connected to the third current source 210c via a third current source transistor (not shown).

[0041] An addition switch 209a, which is a first switch that connects FD 205a and FD 205b, is provided in column a, and an addition switch 209b, which is a second switch that connects FD 205b and FD 205c, is provided in column b. The addition switch 209c is an addition switch that connects FD 205c and FD 205 corresponding to pixel 101 in a pixel column (not shown).

[0042] In normal operation, the addition switches 209a, 209b, and 209c are all in an off state, and no addition or averaging of pixel signals is performed. That is, the signal charges generated in the photodiodes 102a, 102b, and 102c are read out to the vertical signal lines 203a, 203b, and 203c of the respective columns.

[0043] 6 is a diagram showing the state of the pixel circuit when the photoelectric conversion device according to the first embodiment adds or averages pixel signals. An example will be described in which pixel signals from three columns, from column a to column c, are added or averaged.

[0044] In the example shown in FIG. 6, the addition switches 209a and 209b are turned on, and the addition switch 209c is turned off. By turning on the addition switches 209a and 209b, the FD 205a is electrically connected to the FD 205b and FD 205c. By electrically connecting the FD 205a, FD 205b, and FD 205c, the charges held in each FD are added and read out to the signal readout circuit 202 via the amplification transistor 207. At this time, the signal readout circuits 202a and 202c are in an inactive state, and the amount of current supplied from the current sources 210a and 210c is set to a state smaller than that in the active state, so that the added signal is read out to the signal readout circuit 202b via the amplification transistor 207b. The amount of current supplied from the current source 210 is small, which means that the amount of current is smaller than when the signal readout circuit 202 is in an active state. For example, this includes a case where the current source 210 or a current source transistor (not shown) is made non-conductive so as not to flow current to the signal read circuit 202. When the addition switch 209 is made conductive to add the charges held in the FD 205, the signal read circuit 202 other than that of the column from which the signal is read out is made inoperative to reduce the amount of current of the current source 210, thereby making it possible to reduce power consumption.

[0045] 4, by providing the addition switch 209 on the second substrate, it is not necessary to provide a gate contact for forming the addition switch 209 on the first substrate, which has the effect of reducing stray light generated around the gate contact.

[0046] In the above description, when the addition switch 209 is in the on state, the signal readout circuits 202a and 202c are in the inactive state, but the circuits that are in the inactive state are not limited to this. Only the current source 210 or only the amplifier circuit 211 may be in the inactive state. Also, in this embodiment, the addition switch 209 is in the off state for every three pixels, but the number of pixels to which the charges held in the FD 205 are added is not limited to three. As long as the FDs of a plurality of pixel units (two or more pixels) can be connected, the addition switch may be in the off state for any number of pixels.

[0047] Second Embodiment A photoelectric conversion device according to the second embodiment will be described with reference to Fig. 7. Explanations of parts common to the first embodiment will be omitted, and differences from the first embodiment will be mainly described.

[0048] 7 is a diagram showing the state of a pixel circuit when the photoelectric conversion device according to the second embodiment adds or averages pixel signals. In the photoelectric conversion device according to this embodiment, an addition switch 209 is provided as an element of the pixel 101. That is, the addition switch 209 is provided on the first substrate.

[0049] By providing the addition switch 209 on the first substrate, it is possible to increase the size of the amplification transistor 207 mounted on the pixel circuit 201. Therefore, in addition to the reduction in power consumption described in the first embodiment, an effect of reducing noise such as RTS (Random Telegraph Signal) noise generated in the pixel 101 and the pixel circuit 201 can be obtained.

[0050] (Third embodiment) A photoelectric conversion device according to the third embodiment will be described with reference to Figures 8 and 9. The parts common to the first embodiment will be omitted, and the parts different from the first embodiment will be mainly described. The third embodiment differs from the first embodiment in that pixel signals can be added or averaged not only in the horizontal direction, but also in the vertical direction.

[0051] 8 is a diagram showing the state of the pixel circuits during normal operation of the photoelectric conversion device according to the third embodiment. Of the pixels 101 and pixel circuits 201 arranged two-dimensionally, attention is focused on nine pixels arranged in 3 rows and 3 columns.

[0052] A fourth floating diffusion portion, FD205d, is connected to a first signal line 203a to which a first floating diffusion portion, FD205a, is connected. An addition switch 212a, which is a third switch, is provided to connect the FD205a and the FD205d. Similarly, an addition switch 212 capable of connecting the FD205 of each pixel circuit is provided for each of the pixels arranged in 3 rows and 3 columns.

[0053] As shown in FIG. 8, when the addition switch 209 and the addition switch 212 are both in the off state, the photoelectric conversion device operates normally, and the signal charge output by each photodiode 102 is read out to a vertical signal line 203 corresponding to the pixel column to which each photodiode 102 belongs.

[0054] 9 is a diagram showing the state of the pixel circuit when adding or averaging pixel signals in a photoelectric conversion device according to the third embodiment. A case will be described in which signals from pixels in a 3×3 array are added or averaged and output from a vertical signal line 203 corresponding to the central pixel column.

[0055] Among the 3×3 pixels, the addition switches 212a, 201b, 201c, 201d, 201e, and 201f corresponding to the leftmost pixel column and the center pixel column, and the addition switches 209a and 209b are turned on. The addition switches 212g, 212h, and 212i, and the addition switch 209c are turned off. At this time, the selection transistors 208d, 208e, and 208f are selected.

[0056] In the amplification transistor 207e, the charges held in the FDs 205a, 205b, 205c, 205d, 205e, 205f, 205g, 205h, and 205i are added together. The added or averaged charges are read out to the signal readout circuit 202b via the vertical signal line 203.

[0057] In this case, the addition switch 212 and the addition switch 209 may be provided on either the first substrate 100 or the second substrate 200. For example, the addition switch 212 and the addition switch 209 may be provided on different substrates, such as providing the addition switch 212 on the first substrate 100 and the addition switch 209 on the second substrate 200. Also, although the present embodiment has been described as an example in which signals from pixels of 3 rows x 3 columns are added, the number of pixels to be added or averaged is not limited to this.

[0058] According to this embodiment, it is possible to perform driving that performs signal addition or averaging in the vertical direction in addition to the horizontal direction while reducing power consumption.

[0059] (Fourth embodiment) A photoelectric conversion device according to the fourth embodiment will be described with reference to Fig. 10. Explanations of parts common to the first embodiment will be omitted, and differences from the first embodiment will be mainly described.

[0060] Fig. 10 is a diagram showing an example of the configuration of a pixel circuit when a photoelectric conversion device according to a fourth embodiment adds or averages pixel signals. In Fig. 10, eight pairs of pixels 101 and signal readout circuits 202 are arranged in one row and eight columns. Columns a to h are counted from the left end. Each of the pixels 101 is equipped with a Bayer array color filter on the light incident surface side. In the example shown in Fig. 10, the pixels 101 are arranged only in the horizontal direction, so RED and GREEN color filters are arranged alternately corresponding to each pixel.

[0061] In this embodiment, the addition switch 209 is arranged so that pixels having color filters of the same color are connected to each other. That is, the addition switch 209 is connected between FDs 205a and 205c, between 205c and 205e, and between 205e and 205g, which are FDs 205 corresponding to the pixel 101 having a RED color filter. Similarly, the addition switch 209 is connected between FDs 205b and 205d, between 205d and 205f, and between 205f and 205h, which are FDs 205 corresponding to the pixel 101 having a GREEN color filter.

[0062] An example is taken in which pixel signals are added for every three columns. The addition switches 209a, 209c, 209g, 209d, and 209f are turned on, and the addition switches 209e, 209b, and 209h are turned off. At this time, the readout circuits 202c and 202f are in an operating state, and the readout circuits 202a, 202b, 202d, 202e, 202g, and 202h are in an inoperable state. As a result, the three columns of RED pixels to be added are read out via the readout circuit corresponding to the central pixel column, and the three columns of GREEN pixels to be added are similarly read out via the readout circuit corresponding to the central pixel column. In addition, by controlling the on / off states of the addition switches and the operating / inoperable states of the readout circuits as described above, the readout circuits used for signal readout and the readout circuits not used for signal readout are evenly distributed. In other words, the column circuits corresponding to the color center of each color are in an operating state and are used for signal readout. In the diagram shown in Fig. 10, column circuits in the RED or GREEN operating state are evenly arranged every three columns. Since the intervals at which the sum signal or average signal for each color is output are constant, degradation of image quality is suppressed. Therefore, according to the photoelectric conversion device of this embodiment, it is possible to improve image quality while reducing power consumption.

[0063] In this embodiment, an example has been described in which pixels are arranged in one row and eight columns, but signals may be read out from the color centroid column and color centroid row in a similar manner for pixels in a two-dimensional array as shown in the third embodiment.

[0064] Fifth embodiment The photoelectric conversion system according to this embodiment will be described with reference to Fig. 11. Fig. 11 is a block diagram showing a schematic configuration of the photoelectric conversion system according to this embodiment.

[0065] The photoelectric conversion devices described in the first to sixth embodiments are applicable to various photoelectric conversion systems. Examples of the applicable photoelectric conversion systems include digital still cameras, digital camcorders, security cameras, copiers, fax machines, mobile phones, car-mounted cameras, and observation satellites. Camera modules equipped with an optical system such as a lens and an imaging device are also included in the photoelectric conversion systems. FIG. 11 illustrates a block diagram of a digital still camera as an example of these.

[0066] 11 includes an image pickup device 1004, which is an example of a photoelectric conversion device, and a lens 1002 that forms an optical image of a subject on the image pickup device 1004. The system further includes an aperture 1003 that varies the amount of light passing through the lens 1002, and a barrier 1001 that protects the lens 1002. The lens 1002 and the aperture 1003 form an optical system that focuses light on the image pickup device 1004. The image pickup device 1004 is a photoelectric conversion device according to any one of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0067] The photoelectric conversion system also has a signal processing unit 1007 which is an image generating unit that generates an image by processing an output signal output from the imaging device 1004. The signal processing unit 1007 performs various corrections and compression as necessary to output image data. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate separate from the imaging device 1004.

[0068] The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system further includes a recording medium 1012 such as a semiconductor memory for recording or reading out imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading out data on the recording medium 1012. The recording medium 1012 may be built into the photoelectric conversion system, or may be removable.

[0069] The photoelectric conversion system further includes an overall control / calculation unit 1009 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the image capture device 1004 and the signal processing unit 1007. Here, the timing signals and the like may be input from outside, and the photoelectric conversion system only needs to include at least the image capture device 1004 and the signal processing unit 1007 that processes the output signal output from the image capture device 1004.

[0070] The imaging device 1004 outputs an imaging signal to a signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004, and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.

[0071] In this way, according to this embodiment, it is possible to realize a photoelectric conversion system to which the photoelectric conversion device (imaging device) according to any one of the above embodiments is applied.

[0072] Sixth embodiment The photoelectric conversion system and the moving object of this embodiment will be described with reference to Fig. 12. Fig. 12 is a diagram showing the configuration of the photoelectric conversion system and the moving object of this embodiment.

[0073] FIG. 12(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 2300 has an imaging device 2310. The imaging device 2310 is the photoelectric conversion device described in any of the above embodiments. The photoelectric conversion system 2300 has an image processing unit 2312 that performs image processing on a plurality of image data acquired by the imaging device 2310, and a parallax acquisition unit 2314 that calculates parallax (phase difference of parallax images) from the plurality of image data acquired by the photoelectric conversion system 2300. The photoelectric conversion system 2300 also has a distance acquisition unit 2316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 2318 that determines whether or not there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 2314 and the distance acquisition unit 2316 are examples of distance information acquisition means that acquire distance information to an object. That is, the distance information is information on the parallax, the defocus amount, the distance to the object, and the like. The collision determination unit 2318 may determine the possibility of a collision using any of these pieces of distance information. The distance information acquisition means may be realized by dedicated hardware, or may be realized by a software module. In addition, it may be realized by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like, or may be realized by a combination of these.

[0074] The photoelectric conversion system 2300 is connected to a vehicle information acquisition device 2320, and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 2300 is also connected to a control ECU 2330, which is a control unit that outputs a control signal to generate a braking force for the vehicle based on the judgment result of the collision judgment unit 2318. The photoelectric conversion system 2300 is also connected to an alarm device 2340 that issues an alarm to the driver based on the judgment result of the collision judgment unit 2318. For example, when the judgment result of the collision judgment unit 2318 indicates that there is a high possibility of a collision, the control ECU 2330 performs vehicle control to avoid a collision and reduce damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 2340 warns the user by sounding an alarm, displaying alarm information on the screen of a car navigation system, etc., or vibrating the seat belt or steering wheel.

[0075] In this embodiment, the surroundings of the vehicle, for example, the front or rear, are imaged by the photoelectric conversion system 2300. Fig. 12(b) shows a photoelectric conversion system for imaging the area in front of the vehicle (imaging range 2350). A vehicle information acquisition device 2320 sends instructions to the photoelectric conversion system 2300 or the imaging device 2310. This configuration can further improve the accuracy of distance measurement.

[0076] Although the above describes an example of control to prevent collision with other vehicles, the present invention can also be applied to control of automatic driving by following other vehicles, control of automatic driving to prevent deviation from lanes, etc. Furthermore, the photoelectric conversion system is not limited to vehicles such as the vehicle itself, but can be applied to moving bodies (moving devices) such as ships, aircraft, and industrial robots. In addition, the present invention can be applied not only to moving bodies, but also to a wide range of devices that use object recognition, such as intelligent transport systems (ITS).

[0077] Seventh embodiment The photoelectric conversion system of this embodiment will be described with reference to Fig. 13. Fig. 13 is a block diagram showing an example of the configuration of a range image sensor which is the photoelectric conversion system of this embodiment.

[0078] 13, the distance image sensor 401 is configured to include an optical system 407, a photoelectric conversion device 408, an image processing circuit 404, a monitor 405, and a memory 406. The distance image sensor 401 can obtain a distance image according to the distance to the subject by receiving light (modulated light or pulsed light) that is projected from a light source device 411 toward the subject and reflected by the surface of the subject.

[0079] The optical system 407 is configured to have one or more lenses, and guides image light (incident light) from a subject to a photoelectric conversion device 408 , forming an image on the light receiving surface (sensor portion) of the photoelectric conversion device 408 .

[0080] As the photoelectric conversion device 408 , the photoelectric conversion device of each of the above-mentioned embodiments is applied, and a distance signal indicating a distance determined from a light reception signal output from the photoelectric conversion device 408 is supplied to the image processing circuit 404 .

[0081] The image processing circuit 404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion device 408. The distance image (image data) obtained by this image processing is then supplied to a monitor 405 for display, or supplied to a memory 406 for storage (recording).

[0082] In the range image sensor 401 configured in this way, by applying the above-described photoelectric conversion device, it is possible to obtain, for example, a more accurate range image as the pixel characteristics improve.

[0083] Eighth embodiment The photoelectric conversion system of this embodiment will be described with reference to Fig. 14. Fig. 14 is a diagram showing an example of a schematic configuration of an endoscopic surgery system which is the photoelectric conversion system of this embodiment.

[0084] 14 shows a state in which an operator (doctor) 1131 is performing surgery on a patient 1132 on a patient bed 1133 using an endoscopic surgery system 1150. As shown in the figure, the endoscopic surgery system 1150 is composed of an endoscope 1100, a surgical tool 1110, and a cart 1134 on which various devices for endoscopic surgery are mounted.

[0085] The endoscope 1100 is composed of a lens barrel 1101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 1132, and a camera head 1102 connected to the base end of the lens barrel 1101. In the illustrated example, the endoscope 1100 is configured as a so-called rigid lens barrel having a rigid lens barrel 1101, but the endoscope 1100 may be configured as a so-called flexible lens barrel having a flexible lens barrel.

[0086] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 1101. A light source device 1203 is connected to the endoscope 1100, and light generated by the light source device 1203 is guided to the tip of the lens barrel 1101 by a light guide extending inside the lens barrel 1101, and is irradiated via the objective lens toward an observation target in a body cavity of a patient 1132. The endoscope 1100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0087] An optical system and a photoelectric conversion device are provided inside the camera head 1102, and reflected light (observation light) from an observation target is collected by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The photoelectric conversion device described in each of the above-mentioned embodiments can be used as the photoelectric conversion device. The image signal is transmitted to a camera control unit (CCU) 1135 as RAW data.

[0088] The CCU 1135 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 1100 and the display device 1136. Furthermore, the CCU 1135 receives an image signal from the camera head 1102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0089] Under the control of the CCU 1135 , the display device 1136 displays an image based on an image signal that has been subjected to image processing by the CCU 1135 .

[0090] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 1100 with irradiation light when photographing an operation site or the like.

[0091] The input device 1137 is an input interface for the endoscopic surgery system 1150. A user can input various information and instructions to the endoscopic surgery system 1150 via the input device 1137.

[0092] The treatment tool control device 1138 controls the driving of the energy treatment tool 1112 for cauterizing tissue, incising, sealing blood vessels, or the like.

[0093] The light source device 1203 that supplies irradiation light to the endoscope 1100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 1203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation target with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 1102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0094] Furthermore, the light source device 1203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 1102 in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner and synthesizing the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0095] The light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, the wavelength dependency of light absorption in body tissue is utilized. Specifically, a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast by irradiating light in a narrower band than the irradiation light (i.e., white light) in normal observation. Alternatively, the special light observation may be a fluorescent observation in which an image is obtained by fluorescence generated by irradiating excitation light. In the fluorescent observation, it is possible to irradiate excitation light to the body tissue and observe the fluorescence from the body tissue, or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 1203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0096] Ninth embodiment The photoelectric conversion system of this embodiment will be described with reference to Figs. 15(a) and (b). Fig. 15(a) describes glasses 1600 (smart glasses) which are the photoelectric conversion system of this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device described in each of the above embodiments. A display device including a light-emitting device such as an OLED or LED may be provided on the back side of the lens 1601. The photoelectric conversion device 1602 may be one or more. A combination of multiple types of photoelectric conversion devices may also be used. The arrangement position of the photoelectric conversion device 1602 is not limited to that shown in Fig. 15(a).

[0097] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the photoelectric conversion device 1602 and the display device. The control device 1603 also controls the operations of the photoelectric conversion device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the photoelectric conversion device 1602.

[0098] FIG. 15(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device. The lens 1611 is formed with an optical system for projecting light emitted from the photoelectric conversion device in the control device 1612 and the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operation of the photoelectric conversion device and the display device. The control device may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used for detecting the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emission unit to the display unit in a planar view, deterioration of image quality is reduced.

[0099] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0100] More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0101] The display device of this embodiment may have a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on information about the user's line of sight from the photoelectric conversion device.

[0102] Specifically, the display device determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0103] The display area may have a first display area and a second display area different from the first display area, and a high priority area may be determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high priority area may be controlled to be higher than the resolution of areas other than the high priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0104] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the photoelectric conversion device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0105] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses further including a photoelectric conversion device for capturing an image of the outside world. The smart glasses can display captured outside information in real time.

[0106] [Modified embodiment] The present invention is not limited to the above-described embodiment, and various modifications are possible.

[0107] For example, an example in which part of the configuration of any one of the embodiments is added to another embodiment, or an example in which part of the configuration of another embodiment is substituted therefor, is also included in the embodiments of the present invention.

[0108] Further, the photoelectric conversion systems shown in the fifth and sixth embodiments are examples of photoelectric conversion systems to which the photoelectric conversion device can be applied, and the photoelectric conversion systems to which the photoelectric conversion device of the present invention can be applied are not limited to the configurations shown in Fig. 11 and Fig. 12. The same applies to the ToF system shown in the seventh embodiment, the endoscope shown in the eighth embodiment, and the smart glasses shown in the ninth embodiment.

[0109] It should be noted that the above-mentioned embodiments are merely examples of the implementation of the present invention, and the technical scope of the present invention should not be interpreted as being limited by these embodiments. In other words, the present invention can be implemented in various forms without departing from its technical concept or main features.

[0110] The present disclosure also includes the following configuration.

[0111] (Configuration 1) A photoelectric conversion device comprising: a first substrate on which a plurality of photoelectric conversion units are arranged; a plurality of floating diffusion units connected to the plurality of photoelectric conversion units; a first switch connecting a first floating diffusion unit and a second floating diffusion unit among the plurality of floating diffusion units; a second substrate on which a plurality of amplifying transistors are arranged and which output a signal based on the potential of the plurality of floating diffusion units; a first signal line connected to a first amplifying transistor among the plurality of amplifying transistors; a first signal readout circuit connected to the first signal line; a second signal line connected to a second amplifying transistor among the plurality of amplifying transistors; and a second signal readout circuit connected to the second signal line, wherein the first signal readout circuit and the second signal readout circuit are in an operating state when the first switch is in an off state, and the first signal readout circuit is in a non-operating state when the first switch is in an on state.

[0112] (Configuration 2) The photoelectric conversion device described in configuration 1, characterized in that the first signal readout circuit has a first current source transistor connected to a current source, and when the first switch is in an on state, the first current source transistor is in an off state.

[0113] (Configuration 3) The photoelectric conversion device described in configuration 1 or configuration 2, characterized in that the second signal readout circuit has a second current source transistor connected to a current source, and when the first switch is in an on state, the second current source transistor is in an on state.

[0114] (Configuration 4) A photoelectric conversion device described in any one of configurations 1 to 3, characterized in that the first signal readout circuit has a first amplifier circuit, and when the first switch is in an on state, the first amplifier circuit is in a non-operating state.

[0115] (Configuration 5) A photoelectric conversion device described in any one of configurations 1 to 4, characterized in that the second signal readout circuit has a second amplifier circuit, and when the first switch is in an on state, the second amplifier circuit is in an operating state.

[0116] (Configuration 6) The photoelectric conversion device described in any of configurations 1 to 5, wherein the multiple floating diffusion sections include a third floating diffusion section, a second switch connecting the second floating diffusion section and the third floating diffusion section, a third signal line connected to a third amplifying transistor among the multiple amplifying transistors, and a third signal readout circuit connected to the third signal line, and wherein, in reading out one row read out by vertical scanning, when the second switch is in an off state, the second signal readout circuit and the third signal readout circuit are in an operating state, and when the second switch is in an on state, the third signal readout circuit is in a non-operating state.

[0117] (Configuration 7) The photoelectric conversion device described in Configuration 6, characterized in that the third signal readout circuit has a third current source transistor connected to a current source, and when the second switch is in an on state, the third current source transistor is in a non-conducting state.

[0118] (Configuration 8) The third signal read circuit has a third amplifier circuit, 8. The photoelectric conversion device according to configuration 6 or 7, wherein when the second switch is in an on state, the third amplifier circuit is in a non-operating state.

[0119] (Configuration 9) The plurality of photoelectric conversion units are arranged in an array, The photoelectric conversion device according to any one of configurations 1 to 8, wherein a plurality of color filters arranged on the light incident surface sides of the plurality of photoelectric conversion units form a Bayer array.

[0120] (Configuration 10) A photoelectric conversion device described in any one of configurations 1 to 9, characterized in that the color filters of the photoelectric conversion unit connected to the first floating diffusion unit and the photoelectric conversion unit connected to the second floating diffusion unit are the same color.

[0121] (Structure 11) The photoelectric conversion device described in Structure 10, wherein the color filters of the photoelectric conversion unit connected to the first floating diffusion unit and the photoelectric conversion unit connected to the third floating diffusion unit are the same color.

[0122] (Configuration 12) A solid-state imaging device according to any one of configurations 1 to 11, further comprising a fourth floating diffusion connected to the first signal line, and a third switch connecting the first floating diffusion and the fourth floating diffusion.

[0123] (Configuration 13) The photoelectric conversion device according to configuration 12, wherein the first switch is disposed on the first substrate.

[0124] (Configuration 14) The photoelectric conversion device according to configuration 12 or 13, wherein the third switch is disposed on the second substrate.

[0125] (Configuration 15) The first substrate has a first surface and a second surface opposite to the first surface, the second substrate has a third surface opposite to the second surface and a fourth surface opposite to the third surface, the plurality of amplifying transistors are formed on the fourth surface; The photoelectric conversion device according to any one of configurations 1 to 14, further comprising a third substrate laminated on the fourth surface side of the second substrate.

[0126] (Structure 16) A photoelectric conversion device comprising: a first substrate on which a plurality of photoelectric conversion units are arranged; a plurality of floating diffusion units connected to the plurality of photoelectric conversion units; a second substrate on which a first switch connects a first floating diffusion unit and a second floating diffusion unit among the plurality of floating diffusion units; and a plurality of amplifying transistors that output a signal based on the potential of the plurality of floating diffusion units.

[0127] (Configuration 17) The photoelectric conversion device described in Configuration 16, characterized in having a first signal line connected to a first amplifying transistor among the plurality of amplifying transistors, a first signal readout circuit connected to the first signal line, a second signal line connected to a second amplifying transistor among the plurality of amplifying transistors, and a second signal readout circuit connected to the second signal line.

[0128] (Structure 18) The photoelectric conversion device described in structure 16 or structure 17, characterized in that the first substrate has a first surface and a second surface opposite to the first surface, the second substrate has a third surface opposite to the second surface and a fourth surface opposite to the third surface, the multiple amplification transistors are formed on the fourth surface, and a third substrate is stacked on the fourth surface side of the second substrate.

[0129] (Configuration 19) The photoelectric conversion device according to configuration 18, wherein the first signal readout circuit and the second signal readout circuit are provided on the third substrate.

[0130] (Configuration 20) A photoelectric conversion device described in any one of configurations 16 to 19, characterized in that when the first switch is in an off state, the first signal readout circuit and the second signal readout circuit are in an operating state, and when the first switch is in an on state, the first signal readout circuit is in a non-operating state.

[0131] (Configuration 21) A photoelectric conversion system comprising: a photoelectric conversion device according to any one of configurations 1 to 20; and a signal processing unit that generates an image using a signal output by the photoelectric conversion device.

[0132] (Configuration 22) A moving body including a photoelectric conversion device according to any one of configurations 1 to 20, characterized in that the moving body has a control unit that controls the movement of the moving body using a signal output by the photoelectric conversion device. [Explanation of symbols]

[0133] 100 First substrate 102 Photodiode 200 Second board 202 Signal readout circuit 203 Vertical signal line 205 Floating Diffusion 207 Amplifying Transistor 209 Addition Switch

Claims

1. A first substrate on which a plurality of photoelectric conversion units are arranged; A plurality of floating diffusion units connected to the plurality of photoelectric conversion units; A first switch that connects a first floating diffusion unit and a second floating diffusion unit among the plurality of floating diffusion units; A second substrate on which a plurality of amplification transistors that output signals based on the potentials of the plurality of floating diffusion units are arranged; A first signal line connected to a first amplification transistor among the plurality of amplification transistors, and a first signal reading circuit connected to the first signal line; A second signal line connected to a second amplification transistor among the plurality of amplification transistors, and a second signal reading circuit connected to the second signal line; When the first switch is in an off state, the first signal reading circuit and the second signal reading circuit are in an operating state; A photoelectric conversion device, characterized in that when the first switch is in an on state, the first signal reading circuit is in a non-operating state.

2. The first signal reading circuit has a first current source transistor connected to a current source; The photoelectric conversion device according to claim 1, characterized in that when the first switch is in an on state, the first current source transistor is in an off state.

3. The second signal reading circuit has a second current source transistor connected to a current source; The photoelectric conversion device according to claim 1, characterized in that when the first switch is in an on state, the second current source transistor is in an on state.

4. The first signal reading circuit has a first amplification circuit; The photoelectric conversion device according to claim 1, characterized in that when the first switch is in an on state, the first amplification circuit is in a non-operating state.

5. The second signal reading circuit has a second amplification circuit; The photoelectric conversion device according to claim 1, characterized in that when the first switch is in an on state, the second amplification circuit is in an operating state.

6. The plurality of floating diffusion units include a third floating diffusion unit, A second switch that connects the second floating diffusion unit and the third floating diffusion unit; a wiring for connecting the first floating diffusion section, the second floating diffusion section, and the third floating diffusion section; the wiring includes a first node connecting the first floating diffusion section and the wiring, a second node connecting the second floating diffusion section and the wiring, and a third node connecting the third floating diffusion section and the wiring; the first switch includes a first terminal connected to the first node and a second terminal connected to the second node; the second switch includes a third terminal connected to the second node and a fourth terminal connected to the third node; The photoelectric conversion device according to claim 1, wherein the second terminal is connected to the third terminal via the second node.

7. When the first switch is in an on state, the first node is connected to the second node without passing through the third terminal and the fourth terminal. The photoelectric conversion device according to claim 6.

8. When the first switch and the second switch are in an on state, the first node is connected to the third node via the third terminal and the fourth terminal. The photoelectric conversion device according to claim 6.

9. the plurality of floating diffusion sections includes a third floating diffusion section; a second switch for connecting the second floating diffusion section and the third floating diffusion section; a third signal line connected to a third amplification transistor among the plurality of amplification transistors, and a third signal readout circuit connected to the third signal line; in a readout of one row read out by vertical scanning; when the second switch is in an off state, the second signal readout circuit and the third signal readout circuit are in an operating state; The photoelectric conversion device according to claim 1, wherein when the second switch is in an on state, the third signal readout circuit is in a non-operating state.

10. the third signal readout circuit has a third current source transistor connected to a current source; The photoelectric conversion device according to claim 9, wherein when the second switch is in an on state, the third current source transistor is in a non-conducting state.

11. The third signal readout circuit includes a third amplifier circuit, The photoelectric conversion device according to claim 9, wherein when the second switch is in an on state, the third amplifier circuit is in a non-operating state.

12. The plurality of photoelectric conversion units are arranged in an array, The photoelectric conversion device according to claim 1, wherein a plurality of color filters arranged on the light incident surface side of the plurality of photoelectric conversion units form a Bayer array.

13. The photoelectric conversion device according to claim 9, wherein color filters included in each of the photoelectric conversion unit connected to the first floating diffusion unit and the photoelectric conversion unit connected to the second floating diffusion unit are of the same color.

14. The photoelectric conversion device according to claim 13, wherein color filters included in each of the photoelectric conversion unit connected to the first floating diffusion unit and the photoelectric conversion unit connected to the third floating diffusion unit are of the same color.

15. It has a fourth floating diffusion unit connected to the first signal line, The solid-state imaging device according to claim 1, further comprising a third switch that connects the first floating diffusion unit and the fourth floating diffusion unit.

16. The photoelectric conversion device according to claim 15, wherein the first switch is arranged on the first substrate.

17. The photoelectric conversion device according to claim 16, wherein the third switch is arranged on the second substrate.

18. The first substrate has a first surface and a second surface facing the first surface, The second substrate has a third surface facing the second surface and a fourth surface facing the third surface, The plurality of amplifier transistors are formed on the fourth surface, The photoelectric conversion device according to claim 1, further comprising a third substrate laminated on the fourth surface side of the second substrate.

19. A first substrate on which a plurality of photoelectric conversion units are arranged, A plurality of floating diffusion units connected to the plurality of photoelectric conversion units, A photoelectric conversion device, comprising: a second substrate on which a first switch for connecting a first floating diffusion portion and a second floating diffusion portion among the plurality of floating diffusion portions, and a plurality of amplification transistors for outputting a signal based on the potentials of the plurality of floating diffusion portions are arranged.

20. The plurality of floating diffusion portions include a third floating diffusion portion, a second switch for connecting the second floating diffusion portion and the third floating diffusion portion, and a wiring for connecting the first floating diffusion portion, the second floating diffusion portion, and the third floating diffusion portion, wherein the wiring includes a first node connecting the first floating diffusion portion and the wiring, a second node connecting the second floating diffusion portion and the wiring, and a third node connecting the third floating diffusion portion and the wiring, the first switch includes a first terminal connected to the first node and a second terminal connected to the second node, the second switch includes a third terminal connected to the second node and a fourth terminal connected to the third node, and the second terminal is connected to the third terminal via the second node. The photoelectric conversion device according to claim 19.

21. When the first switch is in an on state, the first node is connected to the second node without passing through the third terminal and the fourth terminal. The photoelectric conversion device according to claim 20.

22. When the first switch and the second switch are in an on state, the first node is connected to the third node via the third terminal and the fourth terminal. The photoelectric conversion device according to claim 20.

23. a first signal line connected to a first amplification transistor among the plurality of amplification transistors, and a first signal readout circuit connected to the first signal line, The photoelectric conversion device according to claim 19, further comprising a second signal line connected to a second amplification transistor among the plurality of amplification transistors, and a second signal readout circuit connected to the second signal line.

24. The first substrate has a first surface and a second surface facing the first surface. The second substrate has a third surface facing the second surface and a fourth surface facing the third surface. The plurality of amplification transistors are formed on the fourth surface. The photoelectric conversion device according to claim 23, further comprising a third substrate laminated on the fourth surface side of the second substrate.

25. The photoelectric conversion device according to claim 24, wherein the first signal readout circuit and the second signal readout circuit are provided on the third substrate.

26. When the first switch is in an off state, the first signal readout circuit and the second signal readout circuit are in an operating state. The photoelectric conversion device according to claim 23, wherein when the first switch is in an on state, the first signal readout circuit is in a non-operating state.

27. A photoelectric conversion system, comprising: the photoelectric conversion device according to any one of claims 1 to 26; and a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

28. A moving body including the photoelectric conversion device according to any one of claims 1 to 26, further comprising a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device. The moving body is characterized by the above.

Images