Seasoning method and plasma processing apparatus

Abstract

To provide a technique for seasoning a ring assembly.SOLUTION: Provided is a seasoning method implemented in a plasma processing apparatus that includes a chamber and an electrostatic chuck arranged within the chamber, the electrostatic chuck including a central region which supports a substrate and an annular region which surrounds the central region and supports a ring assembly. The seasoning method includes steps of: disposing the ring assembly on the annular region of the electrostatic chuck; disposing the substrate on the central region of the electrostatic chuck; forming a plasma in the chamber; calculating a thermal resistance between the electrostatic chuck and the ring assembly; and determining, based on the calculated thermal resistance, whether to repeat the step of forming the plasma and the step of calculating the thermal resistance.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Exemplary embodiments of the present disclosure relate to a seasoning method and a plasma processing apparatus. [Background technology]

[0002] As a technique for detecting the amount of moisture in a processing chamber, there is a moisture amount detection method described in Patent Document 1. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-147052 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for seasoning a ring assembly. [Means for solving the problem]

[0005] In one exemplary embodiment of the present disclosure, a method for processing a ring assembly in a plasma processing apparatus including a chamber, an electrostatic chuck disposed in the chamber, and a ring assembly disposed at least partially on the electrostatic chuck, the method including generating plasma in the chamber with the ring assembly disposed on the electrostatic chuck, calculating a thermal resistance between the electrostatic chuck and the ring assembly, and determining whether to repeat the steps of generating plasma and calculating based on the calculated thermal resistance. Effect of the Invention

[0006] According to one exemplary embodiment of the present disclosure, a technique for seasoning a ring assembly can be provided. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Figure 2A] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 2B] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 3] 2 is a diagram showing an example of the upper surface of a substrate support portion 11. FIG. [Figure 4] 2 is a diagram showing an example of a cross section of a substrate support portion 11. FIG. [Diagram 5] 2 is a block diagram showing an example of the configuration of a control board 80. FIG. [Figure 6] FIG. 1 is a diagram for explaining a configuration example of a substrate processing system. [Figure 7] 4 is a flow chart illustrating a detection method according to an exemplary embodiment. [Figure 8] FIG. 1 is a diagram illustrating a schematic diagram of energy flow. [Figure 9] 13 is a diagram showing an example of changes in temperature of the ring assembly 112 and power supplied to the heater 200. FIG. [Figure 10] 11 is a graph showing an example of the relationship between thermal resistance and the number of times steps ST4 to ST6 are repeated. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Each embodiment of the present disclosure will be described below.

[0009] In one exemplary embodiment, a seasoning method is provided for a plasma processing apparatus having a chamber and an electrostatic chuck disposed within the chamber, the electrostatic chuck having a central region for supporting a substrate and an annular region surrounding the central region for supporting a ring assembly, the seasoning method including disposing the ring assembly in the annular region of the electrostatic chuck, disposing the substrate in the central region of the electrostatic chuck, generating a plasma in the chamber, calculating a thermal resistance between the electrostatic chuck and the ring assembly, and determining whether to repeat the generating and calculating steps based on the calculated thermal resistance.

[0010] In one exemplary embodiment, the seasoning method further includes a step of repeating the plasma generating step and the measuring step based on a determination result in the step of determining whether to repeat, and the determining step includes a step of determining whether to further repeat the plasma generating step and the calculating step based on a plurality of thermal resistances calculated by repeating the calculating step.

[0011] In one exemplary embodiment, the seasoning method further includes a step of controlling a supply power supplied to at least one heater disposed in the electrostatic chuck so that the temperature of the at least one heater becomes a set temperature, and a step of measuring the supply power supplied to the at least one heater while a plasma is generated in the chamber, and in the step of calculating a thermal resistance, the thermal resistance is calculated based on the supply power measured while a plasma is generated in the chamber.

[0012] In one exemplary embodiment, the seasoning method further includes a step of measuring a supply power supplied to at least one heater when no plasma is generated in the chamber, and in the step of calculating the thermal resistance, the thermal resistance is further calculated based on the supply power measured when no plasma is generated in the chamber.

[0013] In one exemplary embodiment, in the step of calculating the thermal resistance, the thermal resistance is calculated based on a calculation equation that shows the relationship between (a) the amount of heat transferred from the plasma to the ring assembly, (b) the thermal resistance between the ring assembly and the at least one heater, and (c) the supply power supplied to the at least one heater when the plasma is generated.

[0014] In one exemplary embodiment, a plasma is generated within the chamber such that the temperature of the ring assembly changes over time due to a heat flux generated between the plasma and the ring assembly.

[0015] In one exemplary embodiment, the seasoning method further includes transporting a ring assembly from outside the chamber to inside the chamber by a transport device, and positioning the ring assembly at least partially on the electrostatic chuck by the transport device.

[0016] In one exemplary embodiment, a plasma processing apparatus is provided that includes a chamber, an electrostatic chuck disposed within the chamber, and a controller, wherein the electrostatic chuck has a central region that supports a substrate and an annular region that surrounds the central region and supports a ring assembly, and the controller performs control to position a substrate in the central region of the electrostatic chuck, control to generate plasma in the chamber with the substrate positioned in the central region and the ring assembly positioned in the annular region, control to calculate a thermal resistance between the electrostatic chuck and the ring assembly, and control to determine whether to repeat the steps of generating plasma and calculating based on the calculated thermal resistance.

[0017] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are given the same reference numerals, and duplicated explanations will be omitted. Unless otherwise specified, the positional relationship such as up, down, left, right, etc. will be described based on the positional relationship shown in the drawing. The dimensional ratio of the drawings does not indicate the actual ratio, and the actual ratio is not limited to the illustrated ratio.

[0018] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0019] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0020] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0021] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Figures 2A and 2B are diagrams for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0022] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a and a bottom wall 10b of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0023] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0024] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0025] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0026] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. Details of the temperature adjustment module will be described later with reference to FIG. 4.

[0027] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0028] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0029] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0030] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0031] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0032] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0033] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0034] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0035] The plasma processing apparatus 1 includes an electromagnet assembly 3 including one or more electromagnets 45. The electromagnet assembly 3 is configured to generate a magnetic field in the chamber 10. In one embodiment, the plasma processing apparatus 1 includes an electromagnet assembly 3 including a plurality of electromagnets 45. In the embodiment shown in FIG. 2A and / or FIG. 2B, the plurality of electromagnets 45 includes electromagnets 46 to 49. The plurality of electromagnets 45 are provided on or above the chamber 10. That is, the electromagnet assembly 3 is disposed on or above the chamber 10. In the example shown in FIG. 2A and / or FIG. 2B, the plurality of electromagnets 45 are provided on the showerhead 13.

[0036] Each of the one or more electromagnets 45 includes a coil. In the example shown in FIG. 2A and / or FIG. 2B, the electromagnets 46-49 include coils 61-64. The coils 61-64 are wound around a central axis Z. The central axis Z may be an axis passing through the center of the substrate W or the substrate support 11. That is, in the electromagnet assembly 3, the coils 61-61 may be annular coils. The coils 61-64 are provided coaxially around the central axis Z at the same height position.

[0037] The electromagnet assembly 3 further includes a bobbin 50 (or a yoke). The coils 61 to 64 are wound around the bobbin 50 (or a yoke). The bobbin 50 is formed of, for example, a magnetic material. The bobbin 50 has a columnar portion 51, a plurality of cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a substantially disk shape, and its central axis coincides with the central axis Z. The columnar portion 51 and the plurality of cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The columnar portion 51 has a substantially cylindrical shape, and its central axis coincides with the central axis Z. The radius of the columnar portion 51 is, for example, 30 mm. The cylindrical portions 52 to 55 extend outside the columnar portion 51 in the radial direction with respect to the central axis Z.

[0038] Coil 61 is wound along the outer circumferential surface of columnar portion 51 and is housed in the groove between columnar portion 51 and cylindrical portion 52. Coil 62 is wound along the outer circumferential surface of cylindrical portion 52 and is housed in the groove between cylindrical portion 52 and cylindrical portion 53. Coil 63 is wound along the outer circumferential surface of cylindrical portion 53 and is housed in the groove between cylindrical portion 53 and cylindrical portion 54. Coil 64 is wound along the outer circumferential surface of cylindrical portion 54 and is housed in the groove between cylindrical portion 54 and cylindrical portion 55.

[0039] A current source 65 is connected to each coil included in the one or more electromagnets 45. Supply and stop of current supply from the current source 65 to each coil included in the one or more electromagnets 45, the direction of the current, and the current value are controlled by the control unit 2. When the plasma processing apparatus 1 includes a plurality of electromagnets 45, a single current source may be connected to each coil of the plurality of electromagnets 45, or different current sources may be connected to each coil individually.

[0040] The one or more electromagnets 45 form a magnetic field in the chamber 10 that is symmetrical with respect to the central axis Z. By controlling the current supplied to each of the one or more electromagnets 45, it is possible to adjust the strength distribution (or magnetic flux density) of the magnetic field in the radial direction with respect to the central axis Z. This allows the plasma processing apparatus 1 to adjust the radial distribution of the density of the plasma generated in the chamber 10.

[0041] 3 is a diagram showing an example of the top surface of the substrate support 11. As shown in FIG. 3, the substrate support 11 includes a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The central region 111a includes a plurality of zones 111c as indicated by dashed lines in FIG. 3. In this embodiment, the temperature adjustment module can control the temperature of the substrate W or the substrate support 11 in units of zone 111c. The number of zones 111c and the area and shape of each zone 111c may be set as appropriate according to conditions required for temperature control of the substrate W.

[0042] FIG. 4 is a diagram showing an example of a cross section of the substrate support 11. FIG. 4 shows a part of the cross section of the substrate support 11 at AA' in FIG. 3. As shown in FIG. 4, the substrate support 11 has an electrostatic chuck 1111, a base 1110, and a control board 80. The electrostatic chuck 1111 has a plurality of heaters 200 and a plurality of resistors 201 therein. In this embodiment, in each zone 111c shown in FIG. 3, one heater 200 and one resistor 201 are arranged inside the electrostatic chuck 1111. In each zone 111c, the resistor 201 is arranged near the heater 200. In one example, the resistor 201 may be arranged between the heater 200 and the base 1110 and closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value changes depending on the temperature. In one example, the resistor 201 may be a thermistor.

[0043] The ring assembly 112 is disposed in the annular region 111b of the electrostatic chuck 1111. In addition, inside the electrostatic chuck 1111, the heaters 200 and the resistors 201 are disposed from the central region 111a to the annular region 111b. In addition, the electrostatic chuck 1111 may have one or more electrostatic electrodes 1111c. As an example, the electrostatic electrode 1111c has two electrostatic electrodes 1111c. As shown in FIG. 4, one of the two electrostatic electrodes 1111c may be disposed in an inner region of the annular region 111b, and the other may be disposed in an outer region. The two electrostatic electrodes 1111c may constitute a bipolar electrode. A DC voltage may be applied to the two electrostatic electrodes 1111c so that a potential difference is generated between the two electrostatic electrodes 1111c. When a potential difference is generated between the two electrostatic electrodes 1111c, an electrostatic attraction force is generated between the annular region 111b and the ring assembly 112. The ring assembly 112 is attracted to and held in the annular region 111b by the electrostatic attractive force generated.

[0044] The base 1110 has one or more through holes 90 penetrating from the upper surface (surface facing the electrostatic chuck 1111) to the lower surface (surface facing the control board 80) of the base 1110. The heaters 200 and the resistors 201 can be electrically connected to the control board 80 through the through holes 90. In this embodiment, a connector 91 is fitted into one end of the upper surface side of the through hole 90, and a connector 92 is fitted into one end of the lower surface side of the through hole 90. The heaters 200 and the resistors 201 are electrically connected to the connector 91. The heaters 200 and the resistors 201 may be connected to the connector 91 through wiring arranged inside the electrostatic chuck 1111, for example. The connector 92 is electrically connected to the control board 80. In addition, a plurality of wirings 93 electrically connecting the connector 91 and the connector 92 are arranged in the through hole 90. As a result, the plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control board 80 via the through holes 90. The connector 92 may function as a support member that fixes the control board 80 to the base 1110.

[0045] The control board 80 is a board on which elements for controlling the multiple heaters 200 and / or the multiple resistors 201 are arranged. The control board 80 can be arranged facing the lower surface of the base 1110 and parallel to the lower surface. The control board 80 may be arranged surrounded by a conductive member. The control board 80 may be supported on the base 1110 by a support member other than the connector 92.

[0046] The control board 80 may be electrically connected to the power supply unit 70 via the wiring 73. That is, the power supply unit 70 may be electrically connected to the multiple heaters 200 via the control board 80. The power supply unit 70 generates power to be supplied to the multiple heaters 200. As a result, the power supplied from the power supply unit 70 to the control board 80 may be supplied to the multiple heaters 200 via the connector 92, the wiring 93, and the connector 91. Note that an RF filter for reducing RF may be disposed between the power supply unit 70 and the control board 80. The RF filter may be provided outside the plasma processing chamber 10.

[0047] Furthermore, the control board 80 can be communicatively connected to the control unit 2 via wiring 75. The wiring 75 may be optical fiber. In this case, the control board 80 communicates with the control unit 2 by optical communication. Furthermore, the wiring 75 may be metal wiring.

[0048] 5 is a block diagram showing an example of the configuration of the control board 80. On the control board 80, a control unit 81, and, as examples of elements, a plurality of supply units 82 and a plurality of measurement units 83 are arranged. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0049] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83, and supplies the voltage to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated according to the resistance value of the resistor 201 into a digital signal and output it to the control unit 81.

[0050] The control unit 81 controls the temperature of the substrate W in each zone 111c. The control unit 81 controls the power supply to the heaters 200 based on the set temperature received from the control unit 2 and the voltage indicated by the digital signal received from the measurement unit 83. As an example, the control unit 81 calculates the temperature of the resistor 201 (hereinafter also referred to as the "measured temperature") based on the voltage indicated by the digital signal received from the measurement unit 83. Then, the control unit 81 controls each supply unit 82 based on the set temperature and the measured temperature. Based on the control of the control unit 81, each supply unit 82 switches whether or not to supply the power supplied from the power supply unit 70 to each heater 200. Also, based on the control of the control unit 81, each supply unit 82 may increase or decrease the power supplied from the power supply unit 70 to each heater 200. This allows the substrate W, the electrostatic chuck 1111, and / or the base 1110 to be at a predetermined temperature.

[0051] <Example of substrate processing system configuration> Fig. 6 is a diagram for explaining a configuration example of a substrate processing system, Fig. 6 shows a schematic diagram of a substrate processing system (hereinafter referred to as "substrate processing system PS") according to one exemplary embodiment.

[0052] The substrate processing system PS has substrate processing chambers PM1 to PM6 (hereinafter collectively referred to as "substrate processing modules PM"), a transfer module TM, load lock modules LLM1 and LLM2 (hereinafter collectively referred to as "load lock modules LLM"), a loader module LM, and load ports LP1 to LP3 (hereinafter collectively referred to as "load ports LP"). A controller CT controls each component of the substrate processing system PS to perform a given process on a substrate W.

[0053] The substrate processing modules PM perform processes such as etching, trimming, film formation, annealing, doping, lithography, cleaning, and ashing on the substrate W therein. At least one of the substrate processing chambers PM1 to PM6 may be the plasma processing apparatus 1 shown in FIG. 1, FIG. 2A, or FIG. 2B. At least one of the substrate processing chambers PM1 to PM6 may be a plasma processing apparatus using any plasma source such as inductively coupled plasma or microwave plasma. At least one of the substrate processing chambers PM1 to PM6 may be a measurement module, which may measure the thickness of a film formed on the substrate W or the dimensions of a pattern formed on the substrate W using, for example, an optical method.

[0054] The transfer module TM has a transfer device for transferring a substrate W, and transfers the substrate W between the substrate processing modules PM or between the substrate processing module PM and the load lock module LLM. The substrate processing module PM and the load lock module LLM are disposed adjacent to the transfer module TM. The transfer module TM, the substrate processing module PM, and the load lock module LLM are spatially isolated from or connected to each other by an openable and closable gate valve.

[0055] In one embodiment, a transport device included in the transport module TM transports a substrate W from the transport module TM to a plasma processing space 10s of a plasma processing apparatus 1, which is an example of a substrate processing module PM. The transport device places the substrate W on a central region 111a of a substrate support 11. The plasma processing apparatus 1 may have a lifter, and the transport device may place the substrate W on the lifter. The lifter is configured to be able to rise and fall inside a plurality of through holes provided in the substrate support 11. When the lifter rises, the tip of the lifter protrudes from the central region 111a of the substrate support 11, and the substrate W is held at this position. When the lifter descends, the tip of the lifter is accommodated in the substrate support 11, and the substrate W is placed on the central region 111a of the substrate support 11. As an example, the transport device may be a handler that transports a substrate such as a silicon wafer. In addition to the substrate W, the transport device may transport a ring assembly 112 and place it on an electrostatic chuck 1111. The substrate processing system PS may further include a module for storing a replacement ring assembly 112 .

[0056] The load lock modules LLM1 and LLM2 are provided between the transfer module TM and the loader module LM. The load lock module LLM can switch its internal pressure between atmospheric pressure and vacuum. "Atmospheric pressure" may be the pressure outside each module included in the substrate processing system PS. Furthermore, "vacuum" may be a pressure lower than atmospheric pressure, for example, a medium vacuum of 0.1 Pa to 100 Pa. The load lock module LLM transfers the substrate W from the loader module LM, which is at atmospheric pressure, to the transfer module TM, which is at vacuum, and also transfers the substrate W from the transfer module TM, which is at vacuum, to the loader module LM, which is at atmospheric pressure.

[0057] The loader module LM has a transport device for transporting the substrate W, and transports the substrate W between the load lock module LLM and the load board LP. Inside the load port LP, for example, a FOUP (Front Opening Unified Pod) capable of storing 25 substrates W or an empty FOUP can be placed. The loader module LM takes out the substrate W from the FOUP in the load port LP and transports it to the load lock module LLM. The loader module LM also takes out the substrate W from the load lock module LLM and transports it to the FOUP in the load board LP.

[0058] The controller CT controls each component of the substrate processing system PS to perform a given process on the substrate W. The controller CT stores a recipe in which a process procedure, process conditions, transport conditions, etc. are set, and controls each component of the substrate processing system PS to perform a given process on the substrate W in accordance with the recipe. The controller CT may have some or all of the functions of the controller 2 shown in FIG.

[0059] <Example of seasoning method> FIG. 7 is a flow chart showing a seasoning method (hereinafter also referred to as the present processing method) according to an exemplary embodiment. For example, when the ring assembly 112 is replaced, when the ring assembly 112 is placed on the electrostatic chuck 1111, moisture may exist between the ring assembly 112 and the electrostatic chuck 1111. If this moisture exists, the ring assembly 112 may not be well attracted to the electrostatic chuck 1111. In order to remove moisture existing between the ring assembly 112 and the electrostatic chuck 1111, the ring assembly 112 placed in the chamber is seasoned. In the present processing method, the end point of the seasoning (the point at which the moisture is considered to be almost removed) may be determined based on the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111, which is correlated with the amount of moisture existing between the ring assembly 112 and the electrostatic chuck 1111. In one example, it may be determined that the moisture is almost removed when the thermal resistance reaches a predetermined value by performing the present processing method.

[0060] 7, the present processing method includes a step (ST1) of placing a ring assembly on an electrostatic chuck 1111, a step (ST2) of placing a substrate W on a substrate support 11, a step (ST3) of measuring heater power in a state where no plasma is generated, a step (ST4) of generating plasma in a plasma processing chamber 10, a step (ST5) of measuring the temperature of each heater 200 in a state where plasma is generated, a step (ST6) of calculating thermal resistance, and a step (ST7) of determining whether to repeat steps ST4 to ST6. The processing in each step may be performed in the plasma processing system shown in FIG. 1. In the following, as an example, a control unit 2 controls each part of a plasma processing apparatus 1 to perform the present processing method.

[0061] (Step ST1: Placement of ring assembly) In step ST1, the ring assembly 112 is placed on the electrostatic chuck 1111. For example, the ring assembly 112 may be carried into the plasma processing chamber 10 from the transfer module TM by a transfer device of the transfer module TM. After being carried into the plasma processing chamber 10, the ring assembly 112 may be placed in the annular region 111b of the electrostatic chuck 1111. Alternatively, a person may open the plasma processing chamber 10 and place the ring assembly 112 in the annular region 111b of the electrostatic chuck 1111.

[0062] (Step ST2: Placing the board) In step ST2, the substrate W is placed on the substrate support 11. The substrate W may be transferred from the transfer module TM into the plasma processing chamber 10 by a transfer device of the transfer module TM. After being transferred into the plasma processing chamber 10, the substrate W may be placed in a central region 111a (substrate support surface) of the electrostatic chuck 1111. The substrate W placed on the substrate support 11 may be, for example, a dummy substrate such as a silicon substrate.

[0063] The substrate W has a front surface and a back surface. In step ST2, the substrate W is placed on the substrate support part 11 so that the back surface of the substrate W contacts the substrate support surface of the electrostatic chuck 1111. When the substrate W is placed on the substrate support part 11, a gap may be formed between the back surface of the substrate W and the substrate support surface. The gap may be a groove formed in the substrate support surface of the substrate support part 11. The groove may be formed to have a predetermined pattern on the substrate support surface.

[0064] (Step ST3: Measurement of heater power) In step ST3, the supply power (hereinafter also referred to as "heater power") supplied to the multiple heaters 200 is measured in a state where no plasma is generated. As an example, in this processing method, the temperature of the multiple heaters 200 may be controlled in steps ST3 to ST5 so that the temperature of the substrate W and / or the ring assembly 112 is substantially constant at a set temperature. Then, in step ST3, the heater power supplied to the multiple heaters 200 may be measured in a state where the temperature of the substrate W and / or the ring assembly 112 has reached the set temperature. Also, in step ST3, the heater power supplied to one or more heaters 200 arranged between the ring assembly 112 and the base 1110 among the multiple heaters 200 may be measured.

[0065] (Step ST4: Plasma generation) In step ST4, plasma is generated. Specifically, in step ST4, a processing gas is supplied into the plasma processing chamber 10. A source RF signal is supplied to the upper electrode or the lower electrode. This causes plasma to be generated from the processing gas in the plasma processing chamber 10. Then, an amount of heat corresponding to the generated plasma is supplied from the generated plasma to the ring assembly 112.

[0066] (Step ST5: Measurement of heater power) In step ST5, the heater power supplied to the multiple heaters 200 is measured while the plasma is generated. In step ST5, the temperature of the substrate W and / or the ring assembly 112 may change depending on the amount of heat transferred from the plasma to the substrate W and / or the ring assembly 112. That is, the heater power measured in the multiple heaters 200 may change depending on the amount of heat transferred from the plasma to the substrate W and / or the ring assembly 112. Note that in step ST3, the heater power supplied to one or more heaters 200 arranged between the ring assembly 112 and the base 1110 among the multiple heaters 200 may be measured.

[0067] (Step ST6: Calculation of thermal resistance) In step ST6, the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111 is calculated. The thermal resistance can be calculated based on the heater power measured in steps ST3 and ST5. Hereinafter, an example of a method for calculating the thermal resistance will be described with reference to FIGS. 8 and 9.

[0068] Fig. 8 is a diagram showing a schematic diagram of the flow of energy between the plasma PL, the ring assembly 112, the substrate support 11, and the base 1110. The example shown in Fig. 8 shows the flow of energy in the annular region 111b of the substrate support 11. The substrate support 11 has an electrostatic chuck 1111 and a base 1110. A heater 200 is disposed inside the electrostatic chuck 1111. A flow path 1110a through which a heat transfer medium flows is formed inside the base 1110.

[0069] The temperature of the heater 200 can change depending on the power supplied from the power supply unit 70. In FIG. 8, the power supplied to the heater 200 is referred to as heater power P h In the heater 200, the heater power P h Depending on the heat flux q h Heat flux q h is the heater power P h is the amount of heat generated per unit area, calculated by dividing the amount of heat generated by the heater 200 by the area A. The area A is the area of ​​the heater 200 in the plan view of the substrate W.

[0070] Furthermore, when the plasma PL is generated in the plasma processing chamber 10, the temperature of the ring assembly 112 may increase due to heat transferred from the plasma PL to the ring assembly 112. In FIG. 8, the amount of heat transferred from the plasma PL to the ring assembly 112 divided by the area of ​​the ring assembly 112 is expressed as the heat flux q p is shown as:

[0071] The heat transferred from the plasma PL to the ring assembly 112 is transferred from the ring assembly 112 to the electrostatic chuck 1111. In FIG. 8, the thermal resistance per unit area between the ring assembly 112 and the electrostatic chuck 1111 is represented as the thermal resistance R th Here, A is the area of ​​the zone 111c in which the heater 200 is disposed. th is the thermal resistance of the zone 111c in which the heater 200 is disposed. Also, the amount of heat transferred per unit area from the ring assembly 112 to the electrostatic chuck 1111 is indicated as a heat flux q.

[0072] The heat transferred from the ring assembly 112 to the surface of the electrostatic chuck 1111 is transferred from the surface of the electrostatic chuck 1111 to the heater 200. In FIG. 8, the amount of heat transferred per unit area from the surface of the electrostatic chuck 1111 to the heater 200 is represented as a heat flux q c is shown as:

[0073] The base 1110 is cooled by a heat transfer gas flowing through a flow passage 1110a, thereby cooling the electrostatic chuck 1111. In FIG. 8, the heat flux q per unit area transferred from the back surface of the electrostatic chuck 1111 to the base 1110 is sus As a result, the temperature of the heater 200 can change depending on the amount of heat transferred from the outside of the heater 200 to the heater 200 and the amount of heat transferred from the heater 200 to the outside of the heater 200. For example, in the example shown in FIG. h +q c >q sus If q h+q c sus , the temperature of the heater 200 may decrease.

[0074] When the temperature of the heater 200 is controlled to be constant, the sum of the amount of heat transferred from the outside of the heater 200 to the heater 200 and the amount of heat generated by the heater 200 may be equal to the amount of heat transferred from the heater 200 to the outside of the heater 200. For example, when the temperature of the heater 200 is controlled to be constant, in a state in which no plasma PL is being generated, the amount of heat generated by the heater 200 may be equal to the amount of heat transferred from the heater 200 to the base 1110. That is, in the example shown in FIG. 8, q h =q sus It could be.

[0075] On the other hand, when the temperature of the heater 200 is controlled to be constant, for example, when the plasma PL is generated, the sum of the amount of heat transferred from the outside of the heater 200 to the heater 200 and the amount of heat generated by the heater 200 is equal to the amount of heat transferred from the heater 200 to the outside of the heater 200. Here, the state in which the plasma PL is generated includes a transient state and a steady state. The transient state is, for example, q p >q>q c That is, the temperature of the ring assembly 112 and the electrostatic chuck 1111 is increased by the heat flux q p (This state is also called a "transient state"). On the other hand, a steady state is, for example, p =q=q c That is, the temperature of the ring assembly 112 and the electrostatic chuck 1111 is increased by the heat flux q p This is a state in which the concentration does not increase over time (this state is also called the "steady state").

[0076] ​9 is a diagram showing an example of changes in the temperature of the ring assembly 112 and the power supplied to the heater 200. FIG. 9(A) shows changes in the temperature of the ring assembly 112. FIG. 9(B) shows changes in the power supplied to the heater 200. In the example shown in FIG. 9, the temperature of the heater 200 is controlled to be constant. In addition, the example shown in FIG. 9 shows an example of the results of measuring the power supplied to the heater 200 and calculating the temperature of the ring assembly 112 from a state where plasma is not generated to a state where plasma is generated.

[0077] A period T1 in FIG. 9 is a period in which plasma is not generated. In the period T1, the power supplied to the heater 200 can be constant. A period T2 in FIG. 9 is a period in which plasma is generated, and is in a transient state. In the period T2, the power supplied to the heater 200 decreases over time. In addition, in the period T2, the temperature of the ring assembly 112 increases over time. A period T3 in FIG. 9 is a period in which plasma is generated. In the period T3, a steady state is reached, and the temperature of the ring assembly 112 is constant. In the period T3, the power supplied to the heater 200 is also approximately constant. A period T4 in FIG. 9 is a period in which plasma is not generated. In the period T4, the heat transferred from the plasma to the ring assembly 112 is reduced or eliminated, so that the temperature of the ring assembly 112 decreases, while the power supplied to the heater 200 increases.

[0078] The tendency of the power supplied to the heater 200 to decrease in the transient state shown in period T2 of FIG. 9 can vary depending on the amount of heat transferred from the plasma to the ring assembly 112, the thermal resistance between the ring assembly 112 and the surface of the electrostatic chuck 1111, and the like.

[0079] When the temperature of the heater 200 is controlled to be constant, the heater power P h is the heat flux q from the plasma PL to the ring assembly 112 p , and the thermal resistance R between the ring assembly 112 and the surface of the electrostatic chuck 1111 thFor example, in a transient state, the heat flux q from the plasma PL to the ring assembly 112 varies with p As increases, the heat flux q p Since the temperature of the ring assembly 112 may increase due to h may decrease.

[0080] If the temperature of the heater 200 is controlled to be constant, then during a transient state, the change in the power supplied to the heater 200 can be modeled as a per unit area equation. For example, the heat flux q p If there is a heat generation amount q per unit area of ​​the heater 200, h can be expressed as the following equation (1).

[0081]

number

[0082] The area A of the heater 200 and the density ρ of the ring assembly 112 w , the heat capacity per unit area of ​​the ring assembly 112 C w , thickness z of ring assembly 112 w , density ρ of the ceramic constituting the electrostatic chuck 1111 c , the heat capacity C per unit area of ​​the ceramic constituting the electrostatic chuck 1111 c , the distance z from the surface of the electrostatic chuck 1111 to the heater 200 c , and the thermal conductivity κ of the ceramic constituting the electrostatic chuck 1111 c are predetermined based on the configurations of the ring assembly 112 and the plasma processing apparatus 1. thc ·A is the thermal conductivity κ c and distance zc It is determined in advance by equation (4).

[0083] Heater power P h and heater power P h0 can be obtained by the configuration shown in FIG. 5. In addition, the heat generation amount q h and heat generation amount q h0 As shown in equations (2) and (3), the heater power P h , heater power P h0 and area A.

[0084] And the heat flux q p and thermal resistance R th A is the heater power P h and heater power P h0 It can be obtained from the measurement results and equation (1) by, for example, fitting.

[0085] The graph of the temperature of the ring assembly 112 during the period T2 shown in FIG. 9A also shows the heat flux q p and thermal resistance R th A can be modeled as a parameter. In this embodiment, the temperature change per unit area of ​​the ring assembly 112 during the period T2 can be modeled. In one example, the heat flux q p and thermal resistance R th Using ·A, and a1, a2, a3, λ1, λ2, τ1, and τ2 shown in equations (5)-(11), the temperature TW [° C.] of the ring assembly 112 can be expressed by the following equation (12).

[0086]

number

[0087] Where: T W is the temperature of the ring assembly 112 [° C.] T h is the temperature [°C] of the heater 200 controlled to a constant value.

[0088] Heater 200 temperature T h can be obtained from the conditions when the temperature of the ring assembly 112 is actually controlled to be constant.

[0089] Using the measurement results, the heat flux q p When the thermal resistance Rth·A is calculated, the temperature T W can be calculated from equation (12).

[0090] In addition, when the elapsed time t is sufficiently longer than the time constants τ1 and τ2 expressed by the equations (10) and (11), for example, when the transition is made from the transient state of the period T2 in FIG. 9 to the steady state of the period T3, the temperature T W The temperature T of heater 200 becomes the target temperature. h When calculating, equation (12) can be abbreviated to the following equation (13).

[0091]

number

[0092] For example, the heater temperature T h , heat flux q p , and thermal resistance R th A and R thc From A, the temperature T of the ring assembly 112 is calculated by equation (13). W can be sought.

[0093] As described above, the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111, and the temperature of the ring assembly 112 can be obtained.

[0094] (Step ST7: Decision on repetition) In step ST7, it is determined whether or not to repeat the processes from step ST4 to step ST6. In step ST7, it is determined whether or not to repeat the processes from step ST4 to step ST6 based on the thermal resistance calculated in step ST6.

[0095] FIG. 10 is a graph showing an example of the relationship between the thermal resistance and the number of times steps ST4 to ST6 are repeated. There is a correlation between the amount of moisture present between the ring assembly 112 and the electrostatic chuck 1111 and the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111. That is, when step ST4 (a step of generating plasma) is repeated, a part or all of the moisture present between the ring assembly 112 and the electrostatic chuck 1111 evaporates, and therefore, as shown as an example in FIG. 10, the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111 may decrease. Therefore, in step ST7, for example, if the thermal resistance calculated in step ST6 is higher than a predetermined value, it may be determined that steps ST4 to ST6 are to be repeated. On the other hand, if the thermal resistance calculated in step ST6 is lower than a predetermined value, it may be determined that steps ST4 to ST6 are not to be repeated, and the present processing method may be terminated. In addition, in one example, if the amount of decrease in thermal resistance caused by repeating steps ST4 to ST6 becomes lower than a predetermined value, it may be determined not to repeat steps ST4 to ST6. That is, if the difference between the thermal resistance when steps ST4 to ST6 are performed n times and the thermal resistance when steps ST4 to ST6 are performed n+1 times becomes lower than a predetermined value, it may be determined not to repeat steps ST4 to ST6 and the present processing method may be terminated (n is an integer equal to or greater than 1).

[0096] In step ST7, it may be determined whether to repeat steps ST2 to ST6 based on the thermal resistance calculated in step ST6. In one example, when the control unit 2 determines to repeat steps ST2 to ST6 in step ST7, it may remove the substrate W placed on the electrostatic chuck 1111 from the electrostatic chuck 1111, return to step ST2, place another substrate W on the electrostatic chuck 1111, and execute steps ST3 to ST6. In addition, when the control unit 2 determines to repeat steps ST2 to ST6 in step ST7, it may remove the substrate W placed on the electrostatic chuck 1111 from the electrostatic chuck 1111, return to step ST2, place the removed substrate W on the electrostatic chuck 1111 again, and execute steps ST3 to ST6.

[0097] According to this processing method, it is possible to detect the amount of moisture present between the ring assembly 112 and the electrostatic chuck 1111 based on the thermal resistance between the ring assembly 112 and the electrostatic chuck 1111. Therefore, for example, when replacing the ring assembly 112, it is possible to determine the execution time or number of executions of the plasma processing required to remove the moisture present between the ring assembly 112 and the electrostatic chuck 1111.

[0098] The above embodiments have been described for the purpose of illustration, and various modifications may be made without departing from the scope and spirit of the present disclosure.

[0099] (Appendix 1) 1. A seasoning method for a plasma processing apparatus including a chamber and an electrostatic chuck disposed within the chamber, the electrostatic chuck having a central region for supporting a substrate and an annular region surrounding the central region and supporting a ring assembly, the seasoning method comprising: placing the ring assembly in the annular region of the electrostatic chuck; placing the substrate in the central region of the electrostatic chuck; generating a plasma in the chamber; calculating a thermal resistance between the electrostatic chuck and the ring assembly; determining whether or not to repeat the step of generating plasma and the step of calculating based on the calculated thermal resistance; A processing method and a seasoning method.

[0100] (Appendix 2) The method further includes repeating the step of generating plasma and the step of measuring based on a result of the determination in the step of determining whether to repeat the step of generating plasma and the step of measuring. The seasoning method of claim 1, wherein the determining step includes a step of determining whether or not to further repeat the step of generating the plasma and the step of calculating, based on a plurality of the thermal resistances calculated by repeating the step of calculating.

[0101] (Appendix 3) controlling a supply power supplied to at least one heater disposed in the electrostatic chuck so that the temperature of the at least one heater becomes a set temperature; measuring a power supplied to the at least one heater while a plasma is generated in the chamber; Further comprising: 3. The seasoning method according to claim 1, wherein in the step of calculating the thermal resistance, the thermal resistance is calculated based on the supplied power measured in a state in which plasma is generated in the chamber.

[0102] (Appendix 4) measuring a power supplied to the at least one heater while no plasma is generated in the chamber; 4. The seasoning method of claim 3, wherein in the step of calculating the thermal resistance, the thermal resistance is further calculated based on the supplied power measured in a state where no plasma is generated in the chamber.

[0103] (Appendix 5) A seasoning method as described in Appendix 3 or 4, wherein in the step of calculating the thermal resistance, the thermal resistance is calculated based on a calculation formula that shows the relationship between (a) the amount of heat transferred from the plasma to the ring assembly, (b) the thermal resistance between the ring assembly and the at least one heater, and (c) the supply power supplied to the at least one heater when the plasma is generated.

[0104] (Appendix 6) A seasoning method described in any one of Appendix 3 to 5, wherein the state in which plasma is generated in the chamber is a state in which the temperature of the ring assembly changes over time due to a heat flux generated between the plasma and the ring assembly.

[0105] (Appendix 7) carrying the ring assembly from outside the chamber to inside the chamber by a transport device; The seasoning method of any one of claims 1 to 6, further comprising the step of positioning the ring assembly at least partially on the electrostatic chuck by the transport device.

[0106] (Appendix 8) A plasma processing apparatus comprising: a chamber; an electrostatic chuck disposed within the chamber; a ring assembly disposed at least partially on the electrostatic chuck; and a controller, the electrostatic chuck having a central region for supporting a substrate and an annular region surrounding the central region and supporting a ring assembly; The control unit is controlling positioning of the substrate in the central region of the electrostatic chuck; controlling generating a plasma in the chamber with the substrate disposed in the central region and the ring assembly disposed in the annular region; a control for calculating a thermal resistance between the electrostatic chuck and the ring assembly; and determining whether or not to repeat the step of generating plasma and the step of calculating based on the calculated thermal resistance. The plasma processing apparatus performs the above steps. [Explanation of symbols]

[0107] 1: plasma processing apparatus, 2: control unit, 10: plasma processing chamber, 10a: side wall, 10b: bottom wall, 10s: plasma processing space, 11: substrate support unit, 12: plasma generation unit, 70: power supply unit, 73: wiring, 75: wiring, 81: control unit, 82: supply unit, 83: measurement unit, 111c: zone, 112: ring assembly, 200: heater, 201: resistor, 1110: base, 1110a: flow path, 1111: electrostatic chuck, 1111a: ceramic member, 1111b: electrostatic electrode, 1111c: electrostatic electrode

Claims

1. A seasoning method performed in a plasma processing apparatus comprising a chamber and an electrostatic chuck disposed within the chamber, wherein the electrostatic chuck has a central region for supporting a substrate and an annular region surrounding the central region and supporting a ring assembly, and the seasoning method is The steps include: placing the ring assembly in the annular region of the electrostatic chuck; The steps include: placing the substrate in the central region of the electrostatic chuck; The process of generating plasma in the chamber, A step of calculating the thermal resistance between the electrostatic chuck and the ring assembly, Based on the calculated thermal resistance, a step is made to determine whether or not to repeat the step of generating the plasma and the step of calculating the thermal resistance. Seasoning methods, including [specific ingredients / features].

2. The process further includes repeating the step of generating the plasma and the step of measuring, based on the result of the determination in the step of determining whether or not to repeat the process. The seasoning method according to claim 1, wherein the determination step includes a step of generating the plasma and a step of determining whether or not to further repeat the calculation step, based on a plurality of thermal resistances calculated by repeating the calculation step.

3. A step of controlling the power supplied to at least one heater so that the temperature of at least one heater located within the electrostatic chuck reaches a set temperature, A step of measuring the power supplied to at least one heater while plasma is generated in the chamber, It further includes, The seasoning method according to claim 1, wherein in the step of calculating the thermal resistance, the thermal resistance is calculated based on the supplied power measured while plasma is generated in the chamber.

4. The process further includes measuring the power supplied to at least one heater while no plasma is generated in the chamber, The seasoning method according to claim 3, wherein, in the step of calculating the thermal resistance, the thermal resistance is further calculated based on the supplied power measured when no plasma is generated in the chamber.

5. The seasoning method according to claim 3, wherein in the step of calculating the thermal resistance, the thermal resistance is calculated based on a calculation formula that shows the relationship between (a) the amount of heat transferred from the plasma to the ring assembly, (b) the thermal resistance between the ring assembly and the at least one heater, and (c) the power supplied to the at least one heater when the plasma is generated.

6. The seasoning method according to claim 3, wherein the state in which plasma is generated in the chamber is a state in which the temperature of the ring assembly changes over time due to the heat flux generated between the plasma and the ring assembly.

7. A process of transporting the ring assembly from outside the chamber into the chamber using a transport device, The process of placing the ring assembly on at least a portion of the electrostatic chuck using the transfer device, The seasoning method according to claim 1, further comprising:

8. A plasma processing apparatus comprising a chamber, an electrostatic chuck disposed within the chamber, and a control unit, The electrostatic chuck has a central region for supporting the substrate and an annular region surrounding the central region and supporting the ring assembly. The control unit, Control for positioning the substrate in the central region of the electrostatic chuck, Control for generating plasma in the chamber with the substrate positioned in the central region and the ring assembly positioned in the annular region, Control for calculating the thermal resistance between the electrostatic chuck and the ring assembly, Based on the calculated thermal resistance, a control is made to determine whether or not to repeat the control for generating the plasma and the control for calculating the thermal resistance. A plasma processing device that performs this operation.

9. The control unit is Based on the decision result in the control that determines whether or not to repeat the process, the control that generates the plasma and the control that measures it are further executed. The plasma processing apparatus according to claim 8, wherein in the control for making the determination, a control for generating the plasma and a control for determining whether or not to further repeat the calculation control are executed based on a plurality of thermal resistances calculated by repeatedly performing the calculation control.

10. The control unit is Control that controls the power supplied to at least one heater so that the temperature of at least one heater located within the electrostatic chuck reaches a set temperature, A control system for measuring the power supplied to at least one heater while plasma is generated in the chamber, Further execution, The plasma processing apparatus according to claim 8, wherein, in the control for calculating the thermal resistance, the thermal resistance is calculated based on the supplied power measured while plasma is generated in the chamber.

11. The control unit is While no plasma is generated in the chamber, control is further performed to measure the power supplied to at least one heater. The plasma processing apparatus according to claim 10, wherein, in the control for calculating the thermal resistance, the thermal resistance is further calculated based on the supplied power measured when no plasma is generated in the chamber.

12. The control unit is The plasma processing apparatus according to claim 10, wherein in the control for calculating the thermal resistance, the thermal resistance is calculated based on a calculation formula that shows the relationship between (a) the amount of heat transferred from the plasma to the ring assembly, (b) the thermal resistance between the ring assembly and the at least one heater, and (c) the power supplied to the at least one heater when the plasma is generated.

13. The plasma processing apparatus according to claim 10, wherein the state in which plasma is generated in the chamber is a state in which the temperature of the ring assembly changes over time due to the heat flux generated between the plasma and the ring assembly.

14. The control unit shall The conveying device controls the transport of the ring assembly from outside the chamber into the chamber, The transfer device controls the placement of the ring assembly on at least a portion of the electrostatic chuck, The plasma apparatus according to claim 8, further performing the following.

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