Display apparatus, display module and electronic equipment

Abstract

SOLUTION: A display apparatus is provided, comprising a first pixel, a second pixel, a third pixel, and a fourth pixel, the first pixel comprises a first light-emitting device and a first layer, the first light-emitting device emits first light toward the first layer, the first light comprises an emission spectrum having intensity in a blue light wavelength range and in a green light wavelength range, the first layer includes color conversion material that convert the blue light and green light into red light. The second pixel includes a second light-emitting device and a second layer, the second light-emitting device emits second light toward the second layer, the second layer includes a function to transmit blue light. The third pixel incudes a third light-emitting device and a third layer, the third light-emitting device emits third light toward the third layer, the third layer includes a function to absorb blue light and transmit green light. The fourth pixel includes a fourth light-emitting device and a fourth layer, the fourth light-emitting device emits fourth light toward the fourth layer, the first to fourth light-emitting devices have the same emission spectrum.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] For example, a display device is known that has a first quantum dot layer that converts the wavelength of light emitted from a first light-emitting element, a second quantum dot layer that converts the wavelength of light emitted from a second light-emitting element, and a light reduction film that reduces external light incident on the first quantum dot layer and the second quantum dot layer, and in which neither a color filter nor a quantum dot layer is formed in the blue subpixel (Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-21875 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide a novel display device with excellent convenience, usefulness, or reliability.Another object is to provide a novel display module with excellent convenience, usefulness, or reliability.Another object is to provide a novel electronic device with excellent convenience, usefulness, or reliability.Another object is to provide a novel display device, a novel display module, a new electronic device, or a new semiconductor device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0007] (1) One aspect of the present invention is a display device having a set of pixels. The set of pixels includes a first pixel, a second pixel, a third pixel, and a fourth pixel.

[0008] The first pixel includes a first light-emitting device and a first layer. The first light-emitting device overlaps with the first layer, and the first light-emitting device emits a first light toward the first layer, and the first light has an emission spectrum having an intensity in a range of wavelengths of blue light and a range of wavelengths of green light. The first layer has a function of absorbing the first light, and the first layer includes a color conversion material that converts the blue light and the green light into red light.

[0009] The second pixel includes a second light-emitting device and a second layer. The second light-emitting device overlaps with the second layer, and the second light-emitting device emits a second light toward the second layer, and the second light has the same emission spectrum as the first light. The second layer has a function of transmitting blue light.

[0010] The third pixel includes a third light-emitting device and a third layer. The third light-emitting device overlaps with the third layer, and the third light-emitting device emits third light toward the third layer, and the third light has the same emission spectrum as the first light. The third layer has a function of absorbing blue light and transmitting green light.

[0011] The fourth pixel includes a fourth light-emitting device and a fourth layer. The fourth light-emitting device overlaps the fourth layer, and the fourth light-emitting device emits fourth light toward the fourth layer, where the fourth light has the same emission spectrum as the first light.

[0012] (2) Another embodiment of the present invention is the above display device, wherein the third layer contains a color conversion material that converts blue light into green light.

[0013] This allows a full-color image to be displayed using the first pixel, the second pixel, the third pixel, and the fourth pixel. Also, light-emitting devices having the same emission spectrum of emitted light can be used for the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can have the same configuration. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same process. Also, the manufacturing process of the display device can be simplified. Also, the human eye has a high luminosity for green light compared to blue light with high color purity. Also, the spectrum of blue light with high color purity has a narrow full width at half maximum, and the full width at half maximum of light including blue light and green light is wide. Also, the emission spectrum of a luminescent material with a large Stokes shift, for example, the emission spectrum of a phosphorescent luminescent material, has a wide full width at half maximum. Also, a phosphorescent luminescent material has a high luminous efficiency compared to a fluorescent luminescent material. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has high light-emitting efficiency. Furthermore, high light-emitting efficiency can suppress power consumption. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has high reliability. Furthermore, reliability can be improved. As a result, a novel display device with excellent convenience, usefulness, or reliability can be provided.

[0014] (3) Another embodiment of the present invention is the above-described display device, in which the fourth layer transmits a fourth light.

[0015] This allows display using light including blue light and green light by using the fourth pixel. In addition, the luminance of the second pixel and the third pixel can be suppressed by using the fourth pixel. In addition, the fourth pixel can use light more efficiently than the second pixel and the third pixel. In addition, power consumption can be suppressed. In addition, reliability can be improved. As a result, a novel display device excellent in convenience, usefulness, or reliability can be provided.

[0016] (4) Another embodiment of the present invention is the above-described display device, wherein the fourth layer has a function of transmitting and absorbing the fourth light and converting the absorbed light into red light.

[0017] (5) Moreover, one embodiment of the present invention is the above display device, wherein the fourth layer contains a color conversion material that converts blue light and green light into red light.

[0018] (6) Another embodiment of the present invention is the above display device, wherein the fourth layer contains a color conversion material that converts green light into red light.

[0019] (7) Another embodiment of the present invention is the display device described above, wherein the fourth layer includes a color conversion material that converts blue light into red light and a color conversion material that converts green light into red light.

[0020] This allows display using light including blue light, green light, and red light by using the fourth pixel. Also, the luminance of the first pixel, the second pixel, and the third pixel can be suppressed by using the fourth pixel. Also, reliability can be improved. As a result, a novel display device excellent in convenience, usefulness, and reliability can be provided.

[0021] (8) One aspect of the present invention is a display device having a set of pixels, the set of pixels including a first pixel, a second pixel, a third pixel, and a fourth pixel.

[0022] The first pixel includes a first light-emitting device and a first layer. The first light-emitting device overlaps with the first layer, and the first light-emitting device emits a first light toward the first layer, and the first light has an emission spectrum having an intensity in a wavelength range of blue light. The first layer has a function of absorbing the first light, and the first layer includes a color conversion material that converts the blue light into red light.

[0023] The second pixel includes a second light-emitting device and a second layer, the second light-emitting device overlaps with the second layer, the second light-emitting device emits a second light toward the second layer, the second light has the same emission spectrum as the first light, and the second layer has a function of transmitting blue light.

[0024] The third pixel includes a third light-emitting device and a third layer, the third light-emitting device overlaps with the third layer, the third light-emitting device emits a third light toward the third layer, the third light has the same emission spectrum as the first light, the third layer has a function of absorbing blue light, and the third layer includes a color conversion material that converts the blue light into green light.

[0025] The fourth pixel includes a fourth light-emitting device and a fourth layer. The fourth light-emitting device overlaps with the fourth layer, the fourth light-emitting device emits a fourth light toward the fourth layer, the fourth light has the same emission spectrum as the first light, and the fourth layer has a function of transmitting and absorbing the fourth light and converting the blue light into yellow light.

[0026] (9) Another embodiment of the present invention is the display device described above, wherein the fourth layer contains a color conversion material that converts blue light into yellow light.

[0027] (10) Moreover, one embodiment of the present invention is the above display device, wherein the fourth layer includes a color conversion material that converts blue light into green light and a color conversion material that converts blue light into red light.

[0028] As a result, a full-color image can be displayed using the first pixel, the second pixel, the third pixel, and the fourth pixel. Also, light-emitting devices having the same emission spectrum of emitted light can be used for the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can have the same configuration. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same process. Also, the manufacturing process of the display device can be simplified. Also, the fourth pixel can be used to display using light containing blue light, green light, and red light. Also, the fourth pixel can be used to suppress the luminance of the first pixel, the second pixel, and the third pixel. Also, the reliability can be improved. As a result, a novel display device excellent in convenience, usefulness, or reliability can be provided.

[0029] (11) Another aspect of the present invention is a display module including any one of the display devices described above and at least one of a connector and an integrated circuit.

[0030] (12) Another embodiment of the present invention is an electronic device including any one of the display devices described above and at least one of a battery, a camera, a speaker, and a microphone.

[0031] In the drawings accompanying this specification, components are classified by function and shown in block diagrams as independent blocks; however, in actuality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0032] In this specification, the term "light-emitting device" includes an image display device using a light-emitting device. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to a light-emitting device, a module in which a printed wiring board is provided at the end of a TCP, or a module in which an IC (integrated circuit) is directly mounted on a light-emitting device by a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may have a light-emitting device. Effect of the Invention

[0033] According to one embodiment of the present invention, a novel display device with excellent convenience, usefulness, or reliability can be provided. Furthermore, one embodiment of the present invention can provide a novel display module with excellent convenience, usefulness, or reliability. Further, one embodiment of the present invention can provide a novel electronic device with excellent convenience, usefulness, or reliability. Further, a novel display device can be provided. Further, a novel display module can be provided. Further, a novel electronic device can be provided.

[0034] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract effects other than these from the description in the specification, drawings, claims, etc. [Brief description of the drawings]

[0035] [Figure 1] 1(A) and 1(B) are diagrams illustrating a configuration of a display device according to an embodiment. [Diagram 2] 2(A) and 2(B) are diagrams illustrating a configuration of a display device according to an embodiment. [Diagram 3] 3A and 3B are diagrams illustrating a configuration of a display device according to an embodiment. [Figure 4]FIG. 4 is a diagram illustrating a configuration of a display device according to an embodiment. [Diagram 5] 5(A) and 5(B) are diagrams illustrating a configuration of a display device according to an embodiment. [Figure 6] FIG. 6 is a circuit diagram illustrating a configuration of a display device according to an embodiment. [Figure 7] 7(A) and 7(B) are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 8] 8(A) and 8(B) are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 9] 9(A) and 9(B) are diagrams for explaining the configuration of a pixel according to the embodiment. [Figure 10] 10(A) and 10(B) are diagrams for explaining a configuration of a pixel according to the embodiment. [Figure 11] 11(A) and 11(B) are diagrams for explaining the configuration of a pixel according to the embodiment. [Figure 12] FIG. 12 is a diagram illustrating a configuration of a display module according to an embodiment. [Figure 13] FIG. 13 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 14] FIG. 14 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 15] FIG. 15 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 16] FIG. 16 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 17] FIG. 17 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 18] FIG. 18 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 19] FIG. 19 is a diagram illustrating a configuration of a display module according to an embodiment. [Figure 20]20A to 20C are diagrams illustrating a structure of a display device according to an embodiment. [Figure 21] FIG. 21 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 22] FIG. 22 is a diagram illustrating a configuration of a display device according to an embodiment. [Diagram 23] FIG. 23 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 24] FIG. 24 is a diagram illustrating a configuration of a display device according to an embodiment. [Diagram 25] FIG. 25 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 26] FIG. 26 is a diagram illustrating a configuration of a display device according to an embodiment. [Figure 27] 27A to 27D are diagrams illustrating examples of electronic devices according to an embodiment. [Figure 28] 28A to 28F are diagrams illustrating examples of electronic devices according to an embodiment. [Figure 29] 29A to 29G are diagrams illustrating examples of electronic devices according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] A display device according to an embodiment of the present invention includes a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel includes a first light-emitting device and a first layer, the first light-emitting device emits a first light toward the first layer, the first light has an emission spectrum having an intensity in a range of wavelengths of blue light and a range of wavelengths of green light, and the first layer includes a color conversion material that converts the blue light and the green light into red light. The second pixel includes a second light-emitting device and a second layer, the second light-emitting device emits a second light toward the second layer, the second light has the same emission spectrum as the first light, and the second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer, the third light-emitting device emits a third light toward the third layer, the third light has the same emission spectrum as the first light, and the third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer, where the fourth light-emitting device emits fourth light toward the fourth layer, and the fourth light has the same emission spectrum as the first light.

[0037] As a result, a full-color image can be displayed using the first pixel, the second pixel, the third pixel, and the fourth pixel. Also, light-emitting devices having the same emission spectrum of emitted light can be used for the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can have the same configuration. Also, the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same process. Also, the manufacturing process of the display device can be simplified. Also, the human eye has a high luminosity for green light compared to blue light with high color purity. Also, the spectrum of blue light with high color purity has a narrow full width at half maximum, and the full width at half maximum of light including blue light and green light is wide. Also, the emission spectrum of a luminescent material with a large Stokes shift, for example, the emission spectrum of a phosphorescent luminescent material, has a wide full width at half maximum. Also, a phosphorescent luminescent material has a high luminous efficiency compared to a fluorescent luminescent material. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has high light-emitting efficiency. Furthermore, high light-emitting efficiency can suppress power consumption. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has high reliability. Furthermore, reliability can be improved. As a result, a novel display device with excellent convenience, usefulness, or reliability can be provided.

[0038] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention is not interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated explanations are omitted.

[0039] (Embodiment 1) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.

[0040] FIG. 1A is a perspective view illustrating a configuration of a display device according to one embodiment of the present invention, and FIG. 1B is a front view illustrating a partial configuration of the display device according to one embodiment of the present invention.

[0041] Fig. 2(A) is a cross-sectional view taken along line PQ shown in Fig. 1(B) Fig. 2(B) is a cross-sectional view illustrating a configuration different from that shown in Fig. 2(A).

[0042] <Configuration Example 1 of Display Device 700> One embodiment of the present invention is a display device 700 having a set of pixels 703 (see FIG. 1A). The set of pixels 703 includes a pixel 702A, a pixel 702B, a pixel 702C, and a pixel 702D (see FIG. 1B).

[0043] The display device 700 also has a substrate 510 and a functional layer 520 (see FIG. 1A). The functional layer 520 overlaps the substrate 510, and includes a pixel circuit 530A, a pixel circuit 530B, a pixel circuit 530C, and a pixel circuit 530D (see FIG. 2A).

[0044] Example of the configuration of pixel 702A The pixel 702A includes a light emitting device 550A and a layer CFA, where the light emitting device 550A overlaps with the layer CFA (see FIG. 2A). The pixel 702A also includes a pixel circuit 530A, where the pixel circuit 530A is electrically connected to the light emitting device 550A.

[0045] [Example of configuration of light-emitting device 550A] The light emitting device 550A emits light ELA toward the layer CFA, and the light ELA has an emission spectrum including blue light and green light. In other words, the light ELA has an emission spectrum having an intensity in the range of blue light wavelengths and the range of green light wavelengths. In this specification, blue light includes light having a wavelength of 430 nm or more and less than 490 nm, green light includes light having a wavelength of 490 nm or more and less than 550 nm, and red light includes light having a wavelength of 640 nm or more and less than 770 nm.

[0046] For example, an organic EL element can be used in light emitting device 550A, and an inorganic LED can be used in light emitting device 550A.

[0047] For example, a light-emitting device including a first light-emitting material having an emission spectrum including blue light and a second light-emitting material having an emission spectrum including green light can be used for the light-emitting device 550A. Also, a single light-emitting material having a broad emission spectrum including blue light and green light can be used for the light-emitting device 550A. It should be noted that the light-emitting material having an emission spectrum including blue light and green light has a higher luminous efficiency than a blue light-emitting material having a high color purity. By using a highly efficient light-emitting material, the power consumption of the light-emitting device can be reduced.

[0048] Note that examples of the structure of a light-emitting device that can be used for the light-emitting device 550A will be described in detail in Embodiments 2 to 6.

[0049] [Example of layer CFA configuration] The layer CFA has a function of absorbing the photoELA, and also includes a color conversion material that converts blue light and green light into red light.

[0050] For example, a structure in which a plurality of films are laminated can be used for the layer CFA (see FIG. 3(A)). Specifically, a structure in which the layer CFA1 and the layer CFA2 are laminated can be used for the layer CFA.

[0051] A color conversion material that converts the color of light emitted by the light-emitting device can be used for the layer CFA1. Also, a coloring material that absorbs the light emitted by the light-emitting device can be used for the layer CFA2. This allows the layer CFA1 to efficiently convert the color of the light emitted by the light-emitting device. Also, the layer CFA2 can absorb the light of the light-emitting device that has passed through the layer CFA1, in other words, the light of a color that has not been converted by the layer CFA1. Also, the layer CFA2 can absorb external light and weaken the intensity of external light that passes through the layer CFA2 and reaches the layer CFA1.

[0052] As a color conversion material, for example, a phosphor can be used in the layer CFA. Specifically, quantum dots (QD: Quantum Dot) can be used in the layer CFA. Quantum dots have a narrow peak width of the emission spectrum. This allows emission with high color purity to be obtained. In addition, the photoELA can be converted into red light with high color purity.

[0053] Also, for example, a coloring material that absorbs light of any wavelength less than 640 nm and transmits light of any wavelength between 640 nm and 770 nm can be used for the layer CFA. Specifically, a coloring material for a color filter can be used for the layer CFA. This makes it possible to extract red light RED with high color purity. Also, the pixel 702A can be used to display red.

[0054] Example of the configuration of pixel 702B The pixel 702B includes a light emitting device 550B and a layer CFB, and the light emitting device 550B overlaps with the layer CFB (see FIG. 2A). The pixel 702B also includes a pixel circuit 530B, and the pixel circuit 530B is electrically connected to the light emitting device 550B.

[0055] [Configuration example of light-emitting device 550B] The light emitting device 550B emits light ELB toward the layer CFB, and the light ELB has the same emission spectrum as the light ELA. For example, a light emitting device having the same configuration as the light emitting device 550A can be used for the light emitting device 550B.

[0056] [Example of layer CFB configuration] The layer CFB has a function of transmitting blue light and absorbing green light (see FIG. 3(A)). For example, a coloring material that transmits light of any wavelength less than 490 nm and absorbs light of any wavelength equal to or greater than 490 nm can be used for the layer CFB. Specifically, a coloring material for a color filter can be used for the layer CFB. This makes it possible to extract blue light BLUE with high color purity. Also, the pixel 702B can be used to display blue.

[0057] Example of pixel 702C configuration The pixel 702C includes a light emitting device 550C and a layer CFC, where the light emitting device 550C overlaps with the layer CFC (see FIG. 2A). The pixel 702C also includes a pixel circuit 530C, where the pixel circuit 530C is electrically connected to the light emitting device 550C.

[0058] [Example of the configuration of the light-emitting device 550C] The light-emitting device 550C emits the light ELC toward the layer CFC, and the light ELC has the same emission spectrum as the light ELA. For example, the light-emitting device 550C may have the same configuration as the light-emitting device 550A.

[0059] [Example 1 of Layer CFC Configuration] The layer CFC has a function of absorbing blue light and transmitting green light (see FIG. 3(A)). For example, a coloring material that absorbs light of any wavelength less than 490 nm and transmits light of any wavelength between 490 nm and 550 nm can be used for the layer CFC. Specifically, a coloring material for a color filter can be used for the layer CFC. This makes it possible to extract green light GREEN with high color purity. Also, the pixel 702C can be used to display green.

[0060] [Layer CFC configuration example 2] Also, a color conversion material that converts blue light into green light can be used in the layer CFC.

[0061] For example, a structure in which a plurality of films are laminated can be used for the layer CFC (see FIG. 3(B)). Specifically, a structure in which a layer CFC1 and a layer CFC2 are laminated can be used for the layer CFC.

[0062] A color conversion material that converts the color of light emitted by the light-emitting device can be used in the layer CFC1. Also, a coloring material that absorbs the light emitted by the light-emitting device can be used in the layer CFC2. This allows the layer CFC1 to efficiently convert the color of the light emitted by the light-emitting device. Also, the layer CFC2 can absorb the light of the light-emitting device that has passed through the layer CFC1, in other words, the light of a color that has not been converted by the layer CFC1. Also, the layer CFC2 can absorb external light and weaken the intensity of external light that passes through the layer CFC2 and reaches the layer CFC1.

[0063] As a color conversion material, phosphors can be used in the layer CFC. Specifically, quantum dots can be used in the layer CFC. This allows the light ELC to be converted into green light GREEN with high color purity.

[0064] Example of pixel 702D configuration The pixel 702D includes a light emitting device 550D and a layer CFD, and the light emitting device 550D overlaps with the layer CFD (see FIG. 2A). The pixel 702D also includes a pixel circuit 530D, and the pixel circuit 530D is electrically connected to the light emitting device 550D.

[0065] [Example of the configuration of the light-emitting device 550D] The light emitting device 550D emits light ELD toward the layer CFD, and the light ELD has the same emission spectrum as the light ELA. For example, a light emitting device having the same configuration as the light emitting device 550A can be used for the light emitting device 550D.

[0066] As a result, a full-color image can be displayed using the pixel 702A, the pixel 702B, the pixel 702C, and the pixel 702D. Also, light-emitting devices having the same emission spectrum of emitted light can be used for the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D. Also, the configurations of the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D can be made the same. Also, the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D can be formed in the same process. Also, the manufacturing process of the display device can be simplified. Also, the human eye has a high luminosity for green light compared to blue light with high color purity. Also, the spectrum of blue light with high color purity has a narrow full width at half maximum, and the full width at half maximum of light including blue light and green light is wide. Also, the emission spectrum of a light-emitting substance with a large Stokes shift, for example, the emission spectrum of a phosphorescent light-emitting substance, has a wide full width at half maximum. Furthermore, phosphorescent materials have higher luminous efficiency than fluorescent materials. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has higher luminous efficiency. Furthermore, high luminous efficiency can reduce power consumption. Furthermore, compared to a light-emitting device that emits blue light with high color purity, a light-emitting device that emits light containing blue light and green light has higher reliability. Furthermore, reliability can be improved. As a result, a novel display device with excellent convenience, usefulness, or reliability can be provided.

[0067] [Layer CFD configuration example 1] The layer CFD transmits the light ELD (see FIG. 3(A) and FIG. 3(B)). This allows the blue light BLUE and the green light GREEN to be used for display. Also, the pixel 702D can be used to supplement the brightness of the pixels 702B and 702C. Also, the pixel 702D can be used to suppress the brightness of the pixels 702B and 702C.

[0068] As a result, the pixel 702D can be used to display an image using light including blue light and green light. The pixel 702D can also be used to suppress the luminance of the pixels 702B and 702C. The pixel 702D can use light more efficiently than the pixels 702B and 702C. The pixel 702D can also suppress power consumption. The reliability can also be improved. As a result, a novel display device that is excellent in convenience, usefulness, or reliability can be provided.

[0069] [Layer CFD configuration example 2] The layer CFD transmits and absorbs the light ELD. It also has the function of converting the absorbed light into red light (see FIG. 4). For example, a color conversion material can be used in the layer CFD. This allows blue light BLUE, green light GREEN, and red light RED to be used for display. Also, the pixel 702D can be used to supplement the brightness of other pixels. Also, the pixel 702D can be used to suppress the brightness of other pixels.

[0070] [Layer CFD configuration example 3] In particular, a color conversion material that converts blue and green light into red light can be used in the layer CFD. For example, a phosphor that converts blue and green light into red light can be used in the layer CFD. Specifically, quantum dots can be used in the layer CFD.

[0071] [Layer CFD configuration example 4] Also, a color conversion material that converts green light to red light can be used in the layer CFD. For example, a phosphor that selectively converts the color of green light can be used in the layer CFD. Specifically, quantum dots can be used in the layer CFD.

[0072] [Layer CFD configuration example 5] In addition, a color conversion material that converts blue light to red light and a color conversion material that converts green light to red light can be used in the layer CFD. For example, two types of phosphors can be used in the layer CFD. Specifically, two types of quantum dots can be used in the layer CFD.

[0073] This allows display using light including blue light, green light, and red light by using pixel 702D. Also, the luminance of pixels 702A, 702B, and 702C can be suppressed by using pixel 702D. Also, reliability can be improved. As a result, a novel display device excellent in convenience, usefulness, and reliability can be provided.

[0074] <Configuration Example 2 of Display Device 700> One embodiment of the present invention is a display device having a set of pixels 703 (see FIG. 1A). The set of pixels 703 includes a pixel 702A, a pixel 702B, a pixel 702C, and a pixel 702D (see FIG. 1B).

[0075] The display device 700 also has a substrate 510 and a functional layer 520 (see FIG. 1A). The functional layer 520 overlaps the substrate 510, and includes a pixel circuit 530A, a pixel circuit 530B, a pixel circuit 530C, and a pixel circuit 530D (see FIG. 2A).

[0076] Note that the configuration described in Configuration Example 2 of the display device 700 according to one embodiment of the present invention is different from Configuration Example 1 of the display device 700. Specifically, the configuration example 2 differs from Configuration Example 1 of the display device 700 in that light-emitting device 550A, light-emitting device 550B, light-emitting device 550C, and light-emitting device 550D have an emission spectrum including blue light instead of an emission spectrum including blue light and green light. Here, the different parts will be described in detail, and the above description will be cited for parts having the same configuration.

[0077] Example of the configuration of pixel 702A The pixel 702A includes a light emitting device 550A and a layer CFA, where the light emitting device 550A overlaps with the layer CFA (see FIG. 2A). The pixel 702A also includes a pixel circuit 530A, where the pixel circuit 530A is electrically connected to the light emitting device 550A.

[0078] [Example of configuration of light-emitting device 550A] The light emitting device 550A emits light ELA toward the layer CFA, where the light ELA has an emission spectrum that includes blue light.

[0079] For example, an organic EL element can be used in light emitting device 550A, and an inorganic LED can be used in light emitting device 550A.

[0080] For example, a light emitting device including a first light emitting material with an emission spectrum that includes blue light can be used for light emitting device 550A.

[0081] Note that examples of the structure of a light-emitting device that can be used for the light-emitting device 550A will be described in detail in Embodiments 2 to 6.

[0082] [Example of layer CFA configuration] The layer CFA has a function of absorbing the photoELA, and also includes a color conversion material that converts blue light into red light.

[0083] For example, a structure in which a plurality of films are laminated can be used for the layer CFA (see FIG. 5(A)). Specifically, a structure in which the layer CFA1 and the layer CFA2 are laminated can be used for the layer CFA.

[0084] A color conversion material that converts the color of light emitted by the light-emitting device can be used for the layer CFA1. Also, a coloring material that absorbs the light emitted by the light-emitting device can be used for the layer CFA2. This allows the layer CFA1 to efficiently convert the color of the light emitted by the light-emitting device. Also, the layer CFA2 can absorb the light of the light-emitting device that has passed through the layer CFA1, in other words, the light of a color that has not been converted by the layer CFA1. Also, the layer CFA2 can absorb external light and weaken the intensity of external light that passes through the layer CFA2 and reaches the layer CFA1.

[0085] As a color conversion material, for example, a phosphor can be used in the layer CFA. Specifically, quantum dots can be used in the layer CFA. This allows the light to be converted into red light with high color purity.

[0086] Also, for example, a coloring material that absorbs light of any wavelength less than 640 nm and transmits light of any wavelength between 640 nm and 770 nm can be used for the layer CFA. Specifically, a coloring material for a color filter can be used for the layer CFA. This makes it possible to extract red light RED with high color purity. Also, the pixel 702A can be used to display red.

[0087] Example of the configuration of pixel 702B The pixel 702B includes a light emitting device 550B and a layer CFB, and the light emitting device 550B overlaps with the layer CFB (see FIG. 2A). The pixel 702B also includes a pixel circuit 530B, and the pixel circuit 530B is electrically connected to the light emitting device 550B.

[0088] [Configuration example of light-emitting device 550B] The light-emitting device 550B emits light ELB toward the layer CFB, and the light ELB has the same emission spectrum as the light ELA (see FIG. 5(A)). For example, a light-emitting device having the same configuration as the light-emitting device 550A can be used for the light-emitting device 550B.

[0089] [Example of layer CFB configuration] The layer CFB has the function of transmitting blue light.

[0090] Example of pixel 702C configuration The pixel 702C includes a light emitting device 550C and a layer CFC, where the light emitting device 550C overlaps with the layer CFC (see FIG. 2A). The pixel 702C also includes a pixel circuit 530C, where the pixel circuit 530C is electrically connected to the light emitting device 550C.

[0091] [Example of the configuration of the light-emitting device 550C] The light-emitting device 550C emits the light ELC toward the layer CFC, and the light ELC has the same emission spectrum as the light ELA (see FIG. 5(A)). For example, a light-emitting device having the same configuration as the light-emitting device 550A can be used for the light-emitting device 550C.

[0092] [Example of layer CFC configuration] The layer CFC contains a color conversion material that converts blue light into green light, and also has the function of absorbing blue light.

[0093] For example, a structure in which a plurality of films are laminated can be used for the layer CFC (see FIG. 5(B)). Specifically, a structure in which a layer CFC1 and a layer CFC2 are laminated can be used for the layer CFC.

[0094] A color conversion material that converts the color of light emitted by the light-emitting device can be used in the layer CFC1. Also, a coloring material that absorbs the light emitted by the light-emitting device can be used in the layer CFC2. This allows the layer CFC1 to efficiently convert the color of the light emitted by the light-emitting device. Also, the layer CFC2 can absorb the light of the light-emitting device that has passed through the layer CFC1, in other words, the light of a color that has not been converted by the layer CFC1. Also, the layer CFC2 can absorb external light and weaken the intensity of external light that passes through the layer CFC2 and reaches the layer CFC1.

[0095] For example, a phosphor can be used as a color conversion material in the layer CFC. Specifically, quantum dots can be used in the layer CFC. This allows the light to be converted into green light with high color purity.

[0096] Example of pixel 702D configuration The pixel 702D includes a light emitting device 550D and a layer CFD, and the light emitting device 550D overlaps with the layer CFD (see FIG. 2A). The pixel 702D also includes a pixel circuit 530D, and the pixel circuit 530D is electrically connected to the light emitting device 550D.

[0097] [Example of the configuration of the light-emitting device 550D] The light emitting device 550D emits light ELD toward the layer CFD, and the light ELD has the same emission spectrum as the light ELA (see FIG. 5(A)). For example, a light emitting device having the same configuration as the light emitting device 550A can be used for the light emitting device 550D.

[0098] [Layer CFD configuration example 1] The layer CFD transmits and absorbs the light ELD. The layer CFD also has the function of converting blue light into yellow light (see FIG. 5(A)).

[0099] Yellow light includes light having a wavelength of at least 550 nm and less than 640 nm.

[0100] [Layer CFD configuration example 2] Also, a color conversion material that converts blue light to yellow light can be used in the layer CFD. This allows blue light BLUE and yellow light YELLOW to be used for display. Also, the pixel 702D can be used to supplement the brightness of other pixels. Also, the pixel 702D can be used to suppress the brightness of other pixels.

[0101] [Layer CFD configuration example 3] Also, a color conversion material that converts blue light to green light and a color conversion material that converts blue light to red light can be used in the layer CFD (see FIG. 5(B)). This allows blue light BLUE, green light GREEN, and red light RED to be used for display. Also, pixel 702D can be used to supplement the luminance of other pixels. Also, pixel 702D can be used to suppress the luminance of other pixels.

[0102] As a result, a full-color image can be displayed using the pixel 702A, the pixel 702B, the pixel 702C, and the pixel 702D. Also, light-emitting devices having the same emission spectrum of emitted light can be used for the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D. Also, the configurations of the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D can be made the same. Also, the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D can be formed in the same process. Also, the manufacturing process of the display device can be simplified. Also, the pixel 702D can be used to display using light including blue light, green light, and red light. Also, the pixel 702D can be used to suppress the luminance of the pixel 702A, the pixel 702B, and the pixel 702C. Also, the reliability can be improved. As a result, a novel display device excellent in convenience, usefulness, or reliability can be provided.

[0103] <Configuration Example 3 of Display Device 700> One embodiment of the present invention is a display device having a set of pixels 703 (see FIG. 6). The set of pixels 703 includes pixel 702A, pixel 702B, pixel 702C, and pixel 702D.

[0104] The display device 700 also has a substrate 510 and a functional layer 520 (see FIG. 1A). The functional layer 520 overlaps the substrate 510, and includes a pixel circuit 530A, a pixel circuit 530B, a pixel circuit 530C, and a pixel circuit 530D (see FIG. 2B).

[0105] Furthermore, the functional layer 520 includes a conductive film G1(i), a conductive film G2(i), a conductive film SA(j), a conductive film SB(j), a conductive film SC(j), a conductive film SD(j), a conductive film ANO(j), and a conductive film INT(j) (see FIG. 6).

[0106] <Conductive film configuration example> The conductive film G1(i) is electrically connected to the pixel circuit 530A, the pixel circuit 530B, the pixel circuit 530C, and the pixel circuit 530D, and supplies, for example, a first control signal.

[0107] The conductive film G2(i) is electrically connected to the pixel circuit 530A, the pixel circuit 530B, the pixel circuit 530C, and the pixel circuit 530D, and supplies, for example, a second control signal.

[0108] The conductive film SA(j) is electrically connected to the pixel circuit 530A and supplies, for example, a first image signal.

[0109] The conductive film SB(j) is electrically connected to the pixel circuit 530B and supplies, for example, a second image signal.

[0110] The conductive film SC(j) is electrically connected to the pixel circuit 530C and supplies, for example, a third image signal.

[0111] The conductive film SD(j) is electrically connected to the pixel circuit 530A and supplies, for example, a fourth image signal.

[0112] The conductive film INT(j) is electrically connected to the pixel circuit 530A, the pixel circuit 530B, the pixel circuit 530C, and the pixel circuit 530D, and supplies, for example, a potential for initializing the pixel circuits.

[0113] The conductive film ANO(j) is electrically connected to the pixel circuit 530A, the pixel circuit 530B, the pixel circuit 530C, and the pixel circuit 530D, and supplies, for example, power to drive the light-emitting device.

[0114] Pixel circuit configuration example 1 The pixel circuit 530A includes a transistor TR1, a transistor TR2, a transistor TR3, and a capacitor CS. The pixel circuit 530A also includes a node NA, which is electrically connected to the light emitting device 550A.

[0115] The transistor TR1 includes a gate electrode electrically connected to the conductive film G1(i), and a first electrode and a second electrode electrically connected to the conductive film SA(j).

[0116] The transistor TR2 includes a gate electrode electrically connected to the second electrode of the transistor TR1, a first electrode electrically connected to the conductive film ANO(j), and a second electrode electrically connected to the node NA.

[0117] The transistor TR3 includes a gate electrode electrically connected to the conductive film G2(i), a first electrode electrically connected to the conductive film INT(j), and a second electrode electrically connected to the node NA.

[0118] The capacitance CS includes a first conductive film electrically connected to the second electrode of the transistor TR1 and a second conductive film electrically connected to the node NA, the second conductive film overlapping the first conductive film and sandwiching a dielectric between the second conductive film and the first conductive film.

[0119] At the node NA, the second electrode of the transistor TR2, the second electrode of the transistor TR3, and the second conductive film of the capacitor CS are electrically connected.

[0120] Pixel circuit configuration example 2 Each of pixel circuits 530A, 530B, 530C, and 530D includes a transistor TR2. In each of the pixel circuits, the transistor TR2 has the same size. In each of the pixel circuits, the transistor TR2 has the same channel width. This allows the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D to be driven with the same capacity. In addition, the light-emitting device 550A, the light-emitting device 550B, the light-emitting device 550C, and the light-emitting device 550D can be supplied with a current with the same capacity.

[0121] Pixel circuit configuration example 3 The pixel circuit 530A, the pixel circuit 530B, the pixel circuit 530C, and the pixel circuit 530D all include a transistor TR2. The transistor TR2 included in the pixel circuit 530D can be smaller than the transistor TR2 included in the pixel circuit 530A, the pixel circuit 530B, or the pixel circuit 530C. The light emitted by the light-emitting device 550D is less likely to be absorbed by the layer CFD. This allows the luminance required for the light-emitting device 550D to be lowered. In addition, even if a transistor with low driving capability is used for the transistor TR2, the required luminance can be obtained. In addition, even if a transistor with low driving capability is used for the transistor TR2, the required current can be supplied to the light-emitting device 550D.

[0122] <Configuration Example 4 of Display Device 700> One embodiment of the present invention is a display device having a set of pixels 703 (see FIG. 1A). The set of pixels 703 includes a pixel 702A, a pixel 702B, a pixel 702C, and a pixel 702D (see FIG. 1B).

[0123] The display device 700 also has a substrate 510 and a functional layer 520 (see FIG. 1A). The functional layer 520 overlaps the substrate 510, and includes a pixel circuit 530A, a pixel circuit 530B, a pixel circuit 530C, and a pixel circuit 530D (see FIG. 2B).

[0124] Note that the configuration described in Structural Example 4 of the display device 700 according to one embodiment of the present invention is different from Structural Example 1 of the display device 700 in that the layer CFA is located between the light-emitting device 550A and the pixel circuit 530A, the layer CFB is located between the light-emitting device 550B and the pixel circuit 530B, the layer CFC is located between the light-emitting device 550C and the pixel circuit 530C, and the layer CFD is located between the light-emitting device 550D and the pixel circuit 530D. In other words, Structural Example 1 of the display device 700 described with reference to FIG. 2A is a top-emission display device, and Structural Example 3 of the display device 700 described with reference to FIG. 2B is a bottom-emission display device.

[0125] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0126] (Embodiment 2) In this embodiment, a structure of a light-emitting device that can be used for a display device of one embodiment of the present invention will be described with reference to FIGS. 7A and 7B. FIG.

[0127] FIG. 7A is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, and FIG. 7B is a diagram illustrating energy levels of materials used in the light-emitting device according to one embodiment of the present invention.

[0128] The configuration of the light-emitting device 550X described in this embodiment can be used in the display device of one embodiment of the present invention. Note that the description of the configuration of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the reference character "X" used in the configuration of the light-emitting device 550X can be read as "A" and the description of the light-emitting device 550A can be used. Similarly, the reference character "X" can be read as "B," "C," or "D" and the configuration of the light-emitting device 550X can be applied to the light-emitting device 550B, the light-emitting device 550C, or the light-emitting device 550D.

[0129] <Example of configuration of light-emitting device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, and a unit 103X. The electrode 552X overlaps with the electrode 551X, and the unit 103X is sandwiched between the electrode 552X and the electrode 551X.

[0130] <Example of Unit 103X configuration> The unit 103X has a single-layer structure or a laminated structure. For example, the unit 103X has a layer 111X, a layer 112X, and a layer 113X (see FIG. 7(A)). The unit 103X has a function of emitting light ELX.

[0131] Layer 111X is sandwiched between layer 113X and layer 112X, layer 113X is sandwiched between electrode 552X and layer 111X, and layer 112X is sandwiched between layer 111X and electrode 551X.

[0132] For example, a layer selected from functional layers such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, a carrier-blocking layer, etc. can be used for the unit 103X. Also, a layer selected from functional layers such as a hole-injecting layer, an electron-injecting layer, an exciton-blocking layer, and a charge-generating layer can be used for the unit 103X.

[0133] Example of Layer 112X Configuration For example, a material having a hole transporting property can be used for the layer 112X. The layer 112X can be referred to as a hole transporting layer. Note that a material having a larger band gap than that of the light-emitting material contained in the layer 111X is preferably used for the layer 112X. This can suppress energy transfer from excitons generated in the layer 111X to the layer 112X.

[0134] [Hole-transporting materials] Hole mobility is 1×10 -6 cm 2 A material having a Vs of 1 / Vs or more can be suitably used as a material having a hole transporting property.

[0135] For example, an amine compound or an organic compound having a π-electron-rich heteroaromatic ring skeleton can be used as a material having hole transport properties. Specifically, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, etc. can be used. In particular, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, has high hole transport properties, and contributes to reducing the driving voltage.

[0136] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), etc. can be used.

[0137] Examples of compounds having a carbazole skeleton that can be used include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP).

[0138] Examples of compounds having a thiophene skeleton that can be used include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0139] Examples of compounds having a furan skeleton that can be used include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0140] Example of Layer 113X For example, a material having an electron transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113X. The layer 113X can be referred to as an electron transporting layer. Note that a material having a larger band gap than that of the light-emitting material contained in the layer 111X is preferably used for the layer 113X. This can suppress energy transfer from excitons generated in the layer 111X to the layer 113X.

[0141] [Electron transporting materials] For example, when the square root of the electric field strength V / cm is 600, the electron mobility is 1×10 -7 cm 2 / Vs or more, 5×10 -5 cm 2 A material having a refractive index of 0.1 V or less can be suitably used as a material having electron transport properties. This makes it possible to suppress the transport of electrons in the electron transport layer. Alternatively, it is possible to control the amount of electrons injected into the light-emitting layer. Alternatively, it is possible to prevent the light-emitting layer from becoming in an electron-excess state.

[0142] For example, a metal complex or an organic compound having a π-electron deficient heteroaromatic ring skeleton can be used as the material having an electron transporting property.

[0143] Examples of metal complexes that can be used include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0144] As the organic compound having a π-electron-deficient heteroaromatic ring skeleton, for example, a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, a heterocyclic compound having a triazine skeleton, etc. can be used. In particular, a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton is preferable because it has good reliability. In addition, a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has high electron transport properties and can reduce the driving voltage.

[0145] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), etc. can be used.

[0146] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h ]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0147] Examples of heterocyclic compounds having a pyridine skeleton that can be used include 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like.

[0148] Examples of heterocyclic compounds having a triazine skeleton include 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn). , 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), etc. can be used.

[0149] [Materials with anthracene skeleton] An organic compound having an anthracene skeleton can be used for the layer 113X. In particular, an organic compound containing both an anthracene skeleton and a heterocyclic skeleton can be suitably used.

[0150] For example, an organic compound including both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used for the layer 113X. Alternatively, an organic compound including both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton including two heteroatoms in the ring can be used for the layer 113X. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be suitably used for the heterocyclic skeleton.

[0151] For example, an organic compound including both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used for the layer 113X. Alternatively, an organic compound including both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton including two heteroatoms in the ring can be used for the layer 113X. Specifically, a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used for the heterocyclic skeleton.

[0152] [Example of mixed material composition] Alternatively, a mixture of a plurality of substances can be used for the layer 113X. Specifically, a mixture of an alkali metal, an alkali metal compound, or an alkali metal complex, and a substance having an electron-transporting property can be used for the layer 113X. Note that the HOMO level of the material having an electron-transporting property is preferably −6.0 eV or higher.

[0153] Note that the mixed material can be preferably used for the layer 113X in combination with a structure in which a composite material described separately is used for the layer 104X. For example, a composite material of a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104X. Specifically, a composite material of a substance having an electron-accepting property and a substance having a relatively deep HOMO level HM1 of −5.7 eV or more and −5.4 eV or less can be used for the layer 104X (see FIG. 7B). By using the mixed material for the layer 113X in combination with a structure in which such a composite material is used for the layer 104X, the reliability of the light-emitting device can be improved.

[0154] It is also preferable to combine a structure in which the mixed material is used for the layer 113X and the composite material is used for the layer 104X with a structure in which a material having a hole-transporting property is used for the layer 112X. For example, a substance having a HOMO level HM2 in the range of -0.2 eV to 0 eV with respect to the relatively deep HOMO level HM1 can be used for the layer 112X (see FIG. 7B). This can improve the reliability of the light-emitting device. Note that in this specification and the like, the above light-emitting device may be referred to as a recombination-site tailoring injection structure (ReSTI structure).

[0155] It is preferable that the alkali metal, alkali metal compound, or alkali metal complex exists with a concentration difference (including the case where the concentration difference is 0) in the thickness direction of the layer 113X.

[0156] For example, a metal complex containing an 8-hydroxyquinolinato structure can be used. Also, a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure (for example, a 2-methyl-substituted or 5-methyl-substituted metal complex) can be used.

[0157] Examples of metal complexes that include an 8-hydroxyquinolinato structure include 8-hydroxyquinolinato-lithium (abbreviation: Liq), 8-hydroxyquinolinato-sodium (abbreviation: Naq), etc. In particular, complexes of monovalent metal ions, particularly lithium complexes, are preferred, with Liq being more preferred.

[0158] 《Configuration example 1 of layer 111X》 For example, a light-emitting material, or a light-emitting material and a host material can be used for the layer 111X. The layer 111X can be called a light-emitting layer. It is preferable to arrange the layer 111X in a region where holes and electrons recombine. This allows the energy generated by the recombination of carriers to be efficiently converted into light and emitted.

[0159] Also, it is preferable to arrange the layer 111X away from metals used for the electrodes, etc. This can suppress the quenching phenomenon caused by metals used for the electrodes, etc.

[0160] In addition, it is preferable to adjust the distance from the reflective electrodes, etc. to the layer 111X and place the layer 111X at an appropriate position according to the emission wavelength. This makes it possible to utilize the interference phenomenon between the light reflected by the electrodes, etc. and the light emitted by the layer 111X to reinforce the amplitude. It is also possible to strengthen the light spectrum by strengthening the light of a specific wavelength. It is also possible to obtain a vivid emission color with high intensity. In other words, it is possible to configure a microresonator structure (microcavity) by placing the layer 111X at an appropriate position between the electrodes, etc.

[0161] For example, a fluorescent material, a phosphorescent material, or a material that exhibits Thermally Activated Delayed Fluorescence (TADF) (also called a TADF material) can be used as the light-emitting material. This allows the energy generated by the recombination of carriers to be emitted from the light-emitting material as light ELX (see FIG. 7(A)).

[0162] For example, a light-emitting material that emits light including blue light and green light can be used for the layer 111X. Also, a layer in which a layer including a light-emitting material that emits blue light and a layer including a light-emitting material that emits green light are stacked can be used for the layer 111X.

[0163] The blue light-emitting material has an emission spectrum with a peak emission intensity in the region of 430 nm or more and less than 490 nm, and the green light-emitting material has an emission spectrum with a peak emission intensity in the region of 490 nm or more and less than 550 nm.

[0164] [Fluorescent substances] A fluorescent material can be used for the layer 111X. For example, the following fluorescent materials can be used for the layer 111X. Note that the present invention is not limited to these, and various known fluorescent materials can be used for the layer 111X.

[0165] Specifically, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl N,N'-bis[4-(9H-carbazol-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: : 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N '-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be used.

[0166] In particular, condensed aromatic diamine compounds typified by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole trapping properties and excellent luminous efficiency or reliability.

[0167] In addition, N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), and the like can be used.

[0168] In addition, 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM3), (4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]ki 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(di 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), etc. can be used.

[0169] [Phosphorescent materials] A phosphorescent material can be used for the layer 111X. For example, the phosphorescent materials exemplified below can be used for the layer 111X. Note that the present invention is not limited thereto, and various known phosphorescent materials can be used for the layer 111X.

[0170] For example, organometallic iridium complexes having a 4H-triazole skeleton, organometallic iridium complexes having a 1H-triazole skeleton, organometallic iridium complexes having an imidazole skeleton, organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, organometallic iridium complexes having a pyrimidine skeleton, organometallic iridium complexes having a pyrazine skeleton, organometallic iridium complexes having a pyridine skeleton, rare earth metal complexes, platinum complexes, and the like can be used for layer 111X.

[0171] [Phosphorescent material (blue)] Examples of organometallic iridium complexes having a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), and the like.

[0172] Examples of organometallic iridium complexes having a 1H-triazole skeleton include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), and the like.

[0173] Examples of organometallic iridium complexes having an imidazole skeleton include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), and the like.

[0174] An example of an organometallic iridium complex having a phenylpyridine derivative as a ligand having an electron-withdrawing group is bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) acetylacetonate (abbreviation: FIracac), etc. can be used.

[0175] [Phosphorescent material (green)] Examples of organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: :[Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), and the like can be used.

[0176] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and the like.

[0177] An example of an organometallic iridium complex having a pyridine skeleton is tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN 2 )phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy-d3)]), and the like can be used.

[0178] Examples of rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0179] [Phosphorescent material (red)] Examples of organometallic iridium complexes having a pyrimidine skeleton include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), and the like.

[0180] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and the like.

[0181] Examples of organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), etc. can be used.

[0182] Examples of rare earth metal complexes that can be used include tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]), and the like.

[0183] As the platinum complex, for example, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) can be used.

[0184] [Materials that exhibit thermally activated delayed fluorescence (TADF materials)] A TADF material can be used for the layer 111X. When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material. Also, the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0185] For example, the TADF materials shown below can be used as the light-emitting material. However, the light-emitting material is not limited to these, and various known TADF materials can be used.

[0186] In addition, TADF materials have a small difference between the S1 and T1 levels, and can reverse intersystem crossing (upconversion) from the triplet excited state to the singlet excited state with a small amount of thermal energy. This allows efficient generation of the singlet excited state from the triplet excited state. In addition, the triplet excited energy can be converted into light emission.

[0187] In addition, exciplexes (also called exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 level and the T1 level and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0188] As an index of the T1 level, a phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) may be used. For a TADF material, when a tangent line is drawn at the base of the short wavelength side of the fluorescence spectrum, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the short wavelength side of the phosphorescence spectrum, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between the S1 level and the T1 level is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0189] For example, fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. can be used as TADF materials. In addition, metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be used as TADF materials.

[0190] Specifically, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), and the like, whose structural formulas are shown below, can be used.

[0191] [ka]

[0192] Furthermore, for example, a heterocyclic compound having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used as a TADF material.

[0193] Specifically, the structural formulas of the compounds are as follows: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), etc. can be used.

[0194] [ka]

[0195] The heterocyclic compound has a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. In particular, among the skeletons having a π-electron deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) and triazine skeleton are preferred because they are stable and have good reliability. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton and benzothienopyrazine skeleton are preferred because they have high electron acceptability and good reliability.

[0196] Among the skeletons having a π-electron-rich heteroaromatic ring, it is preferable to have at least one of the acridine skeleton, the phenoxazine skeleton, the phenothiazine skeleton, the furan skeleton, the thiophene skeleton, and the pyrrole skeleton, since they are stable and reliable. As the furan skeleton, the dibenzofuran skeleton is preferable, and as the thiophene skeleton, the dibenzothiophene skeleton is preferable. As the pyrrole skeleton, the indole skeleton, the carbazole skeleton, the indolocarbazole skeleton, the bicarbazole skeleton, and the 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.

[0197] In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is particularly preferable because the electron donating property of the π-electron rich heteroaromatic ring and the electron accepting property of the π-electron deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, so that thermally activated delayed fluorescence can be efficiently obtained. In addition, an aromatic ring to which an electron withdrawing group such as a cyano group is bonded may be used instead of the π-electron deficient heteroaromatic ring. In addition, an aromatic amine skeleton, a phenazine skeleton, etc. can be used as the π-electron rich skeleton.

[0198] In addition, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or a heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.

[0199] In this way, a π-electron deficient skeleton and a π-electron rich skeleton can be used in place of at least one of a π-electron deficient heteroaromatic ring and a π-electron rich heteroaromatic ring.

[0200] 《Configuration example 2 of layer 111X》 A material having carrier transport properties can be used as the host material. For example, a material having hole transport properties, a material having electron transport properties, a TADF material, a material having an anthracene skeleton, a mixed material, or the like can be used as the host material. Note that a material having a band gap larger than that of the light-emitting material contained in the layer 111X is preferably used as the host material. This can suppress energy transfer from excitons generated in the layer 111X to the host material.

[0201] [Hole-transporting materials] Hole mobility is 1×10 -6 cm 2 A material having a hole-transporting property of 1 / Vs or more can be suitably used as the material having a hole-transporting property. For example, a material having a hole-transporting property that can be used for the layer 112X can be used for the layer 111X.

[0202] [Electron transporting materials] A metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the material having an electron-transporting property. For example, the material having an electron-transporting property that can be used for the layer 113X can be used for the layer 111X.

[0203] [Materials with anthracene skeleton] An organic compound having an anthracene skeleton can be used as a host material. In particular, when a fluorescent material is used as a light-emitting material, an organic compound having an anthracene skeleton is suitable. This makes it possible to realize a light-emitting device having good light-emitting efficiency and durability.

[0204] As the organic compound having an anthracene skeleton, a diphenylanthracene skeleton, particularly an organic compound having a 9,10-diphenylanthracene skeleton, is preferable because it is chemically stable. In addition, when the host material has a carbazole skeleton, it is preferable because the hole injection and transport properties are enhanced. In particular, when the host material contains a dibenzocarbazole skeleton, the HOMO level is shallower by about 0.1 eV than that of carbazole, making it easier for holes to enter, and it is also preferable because it has excellent hole transport properties and high heat resistance. Note that, from the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0205] Therefore, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, or a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton is preferable as the host material.

[0206] For example, 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-phenyl-3-[4-(10-phenyl [4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), etc. can be used.

[0207] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties.

[0208] [Materials that exhibit thermally activated delayed fluorescence (TADF materials)] TADF materials can be used as host materials. When TADF materials are used as host materials, triplet excitation energy generated in the TADF material can be converted to singlet excitation energy by reverse intersystem crossing. Furthermore, the excitation energy can be transferred to the light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can increase the light-emitting efficiency of the light-emitting device.

[0209] This is very effective when the luminescent material is a fluorescent luminescent material. In this case, in order to obtain high luminous efficiency, the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. In addition, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent luminescent material.

[0210] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest energy absorption band of the fluorescent material, because this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0211] In addition, in order to efficiently generate singlet excitation energy from triplet excitation energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. In addition, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. For this purpose, it is preferable that the fluorescent material has a protective group around the luminophore (the skeleton that causes light emission) of the fluorescent material. As the protective group, a substituent that does not have a π bond is preferable, and a saturated hydrocarbon is preferable, specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms are mentioned, and it is more preferable that there are a plurality of protective groups. Since a substituent that does not have a π bond has poor function of transporting carriers, the distance between the TADF material and the luminophore of the fluorescent material can be increased without affecting carrier transport or carrier recombination.

[0212] Here, the luminophore refers to an atomic group (skeleton) that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.

[0213] Examples of the condensed aromatic ring or condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because they have a high fluorescence quantum yield.

[0214] For example, a TADF material that can be used as a light-emitting material can be used as a host material.

[0215] [Mixed material composition example 1] A material in which a plurality of kinds of substances are mixed can be used as the host material. For example, a material having an electron transporting property and a material having a hole transporting property can be used as the mixed material. The weight ratio of the material having a hole transporting property and the material having an electron transporting property contained in the mixed material may be set to (material having a hole transporting property / material having an electron transporting property)=(1 / 19) or more and (19 / 1) or less. This makes it possible to easily adjust the carrier transporting property of the layer 111X. In addition, the recombination region can be easily controlled.

[0216] [Mixed material composition example 2] A material mixed with a phosphorescent material can be used as a host material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as an emitting material.

[0217] [Mixed material composition example 3] A mixed material containing a material that forms an exciplex can be used as the host material. For example, a material in which the emission spectrum of the formed exciplex overlaps with the wavelength of the lowest energy absorption band of the light-emitting material can be used as the host material. This makes the energy transfer smooth, and the light-emitting efficiency can be improved. Alternatively, the driving voltage can be suppressed. With this configuration, light emission can be efficiently obtained using ExTET (Exciplex-Triplet Energy Transfer), which is the energy transfer from the exciplex to the light-emitting material (phosphorescent material).

[0218] At least one of the materials forming the exciplex can be a phosphorescent material, which allows reverse intersystem crossing to be utilized, or allows triplet excitation energy to be efficiently converted into singlet excitation energy.

[0219] As a combination of materials for forming an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Alternatively, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. This allows the exciplex to be formed efficiently. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using a cyclic voltammetry (CV) measurement method.

[0220] The formation of an exciplex can be confirmed, for example, by comparing the emission spectrum of a material having hole transport properties, the emission spectrum of a material having electron transport properties, and the emission spectrum of a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectrum of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of an exciplex can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and the transient PL of a mixed film obtained by mixing these materials, and observing the difference in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component than the transient PL lifetime of each material, or the proportion of delayed components becoming larger. The above-mentioned transient PL may also be read as transient electroluminescence (EL). That is, the formation of an exciplex can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and the transient EL of a mixed film obtained by mixing these materials, and observing the difference in transient response.

[0221] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0222] (Embodiment 3) In this embodiment, a structure of a light-emitting device 550X of one embodiment of the present invention will be described with reference to FIGS. 7A and 7B. FIG.

[0223] <Example of configuration of light-emitting device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 104X. The electrode 552X overlaps with the electrode 551X, and the unit 103X is sandwiched between the electrode 551X and the electrode 552X. The layer 104X is sandwiched between the electrode 551X and the unit 103X. Note that, for example, the structure described in Embodiment 2 can be used for the unit 103X.

[0224] <Example of electrode 551X configuration> For example, a conductive material can be used for the electrode 551X. Specifically, a film containing a metal, an alloy, or a conductive compound can be used for the electrode 551X in a single layer or a multilayer structure.

[0225] For example, a film that efficiently reflects light can be used for the electrode 551X. Specifically, a film of an alloy containing silver and copper, an alloy containing silver and palladium, or a metal film such as aluminum can be used for the electrode 551X.

[0226] Also, for example, a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551X. This allows a microresonator structure (microcavity) to be provided in the light-emitting device 550X. Alternatively, light of a specific wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow half-width spectrum can be extracted. Alternatively, light of a vivid color can be extracted.

[0227] For example, a film that transmits visible light can be used for the electrode 551X. Specifically, a single layer or a stacked layer of a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used for the electrode 551X.

[0228] In particular, a material having a work function of 4.0 eV or more can be suitably used for the electrode 551X.

[0229] For example, a conductive oxide containing indium can be used, such as indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (abbreviation: IWZO), etc.

[0230] Also, for example, a conductive oxide containing zinc can be used, specifically, zinc oxide, zinc oxide doped with gallium, zinc oxide doped with aluminum, etc.

[0231] Also, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (for example, titanium nitride), etc. can be used. Alternatively, graphene can be used.

[0232] 《Configuration example 1 of layer 104X》 For example, a material having a hole-injecting property can be used for the layer 104X. The layer 104X can also be referred to as a hole-injecting layer.

[0233] For example, the hole mobility is 1×10 when the square root of the electric field strength V / cm is 600. -3 A material having a refractive index of 1×10 cm / Vs or less can be used for the layer 104X. 4 Ω cm or more 1×10 7 A film having an electrical resistivity of 5×10 4 Ω cm or more 1×10 7 It has an electrical resistivity of 1×10 5 Ω cm or more 1×10 7 It has an electrical resistivity of less than Ω·cm.

[0234] 《Configuration example 2 of layer 104X》 Specifically, a substance having an electron-accepting property can be used for the layer 104X. Alternatively, a composite material containing a plurality of kinds of substances can be used for the layer 104X. This can facilitate the injection of holes from the electrode 551X, for example. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0235] [Electron-accepting substances] An organic compound or an inorganic compound can be used as the substance having an electron accepting property. The substance having an electron accepting property can extract an electron from an adjacent hole transport layer or a material having a hole transport property by application of an electric field.

[0236] For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as the substance having electron-accepting properties. Note that organic compounds having electron-accepting properties are easy to deposit and form into a film. This can increase the productivity of the light-emitting device 550X.

[0237] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used.

[0238] In particular, a compound in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, is preferred because it is thermally stable.

[0239] In addition, radialene derivatives having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group)[3] are preferred because they have very high electron-accepting properties.

[0240] Specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], and the like can be used.

[0241] Furthermore, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used as the substance having electron accepting properties.

[0242] In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: HPc), phthalocyanine complex compounds such as copper (II) phthalocyanine (CuPc), and compounds having an aromatic amine skeleton such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD) can be used.

[0243] Also, polymers such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviation: PEDOT / PSS) can be used.

[0244] [Composite material composition example 1] For example, a composite material including a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104X. As a result, not only a material having a high work function but also a material having a low work function can be used for the electrode 551X. Alternatively, a material for the electrode 551X can be selected from a wide range of materials regardless of the work function.

[0245] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, polymeric compounds (oligomers, dendrimers, polymers, etc.) can be used as materials having hole transport properties for the composite material. -6 cm 2 For example, a material having a hole-transport property that can be used for the layer 112X can be used for the composite material.

[0246] In addition, a substance having a relatively deep HOMO level can be preferably used as a material having a hole transporting property of the composite material. Specifically, the HOMO level is preferably −5.7 eV or more and −5.4 eV or less. This can facilitate injection of holes into the unit 103X. In addition, it can facilitate injection of holes into the layer 112X. In addition, it can improve the reliability of the light-emitting device 550X.

[0247] Examples of compounds having an aromatic amine skeleton that can be used include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0248] Examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCA3), carbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, and the like can be used.

[0249] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10 -bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentacene, coronene, and the like can be used.

[0250] Examples of aromatic hydrocarbons having a vinyl group that can be used include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

[0251] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD).

[0252] For example, a substance having any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used as a material having a hole transport property of the composite material. In addition, a substance having an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used as a material having a hole transport property of the composite material. Note that the use of a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of the light-emitting device 550X.

[0253] Examples of these materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2 -d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophene-4-yl)phenyl]-N-phenyl -4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-0 3), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-Dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis(9 ,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, etc. can be used.

[0254] [Composite material composition example 2] For example, a composite material containing a substance having an electron accepting property, a material having a hole transporting property, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as the material having a hole injecting property. In particular, a composite material having an atomic ratio of fluorine atoms of 20% or more can be preferably used. This can reduce the refractive index of the layer 104X. Alternatively, a layer having a low refractive index can be formed inside the light-emitting device 550X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0255] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0256] (Embodiment 4) In this embodiment, a structure of a light-emitting device 550X of one embodiment of the present invention will be described with reference to FIGS. 7A and 7B. FIG.

[0257] <Example of configuration of light-emitting device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 105X. The electrode 552X has a region overlapping with the electrode 551X, and the unit 103X has a region sandwiched between the electrode 551X and the electrode 552X. The layer 105X has a region sandwiched between the unit 103X and the electrode 552X. Note that, for example, the structure described in the second embodiment can be used for the unit 103X.

[0258] <Example of electrode 552X configuration> For example, a conductive material can be used for the electrode 552X. Specifically, a material containing a metal, an alloy, or a conductive compound can be used for the electrode 552X in a single layer or a multilayer structure.

[0259] For example, the material that can be used for the electrode 551X described in the third embodiment can be used for the electrode 552X. In particular, a material having a work function smaller than that of the electrode 551X can be suitably used for the electrode 552X. Specifically, a material having a work function of 3.8 eV or less is preferable.

[0260] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these can be used for the electrode 552X.

[0261] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these, such as an alloy of magnesium and silver or an alloy of aluminum and lithium, can be used for the electrode 552X.

[0262] Example of Layer 105X For example, a material having an electron injection property can be used for the layer 105X. The layer 105X can also be referred to as an electron injection layer.

[0263] Specifically, a substance having an electron donating property can be used for the layer 105X. Alternatively, a composite material of a substance having an electron donating property and a material having an electron transporting property can be used for the layer 105X. Alternatively, an electride can be used for the layer 105X. This can facilitate the injection of electrons from the electrode 552X, for example. Alternatively, not only a material having a small work function but also a material having a large work function can be used for the electrode 552X. Alternatively, a material for the electrode 552X can be selected from a wide range of materials regardless of the work function. Specifically, aluminum (Al), silver (Ag), indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552X. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0264] [Electron-donating substances] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the electron donating substance. Alternatively, organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can be used as the electron donating substance.

[0265] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, and 8-hydroxyquinolinato-lithium (abbreviation: Liq).

[0266] As the alkaline earth metal compound (including oxides, halides, and carbonates), calcium fluoride (CaF2) and the like can be used.

[0267] [Composite material composition example 1] In addition, a composite material of a plurality of substances can be used as a material having an electron injecting property. For example, a composite material can be used of a substance having an electron donating property and a material having an electron transporting property.

[0268] [Electron transporting materials] For example, when the square root of the electric field strength V / cm is 600, the electron mobility is 1×10 -7 cm 2 / Vs or more, 5×10 -5 cm 2 A material having a .DELTA..times ...

[0269] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the material having an electron-transporting property. For example, the material having an electron-transporting property that can be used for the layer 111X can be used for the layer 105X.

[0270] [Composite material composition example 2] Also, a microcrystalline alkali metal fluoride and a material having an electron transporting property can be used for the composite material. Alternatively, a microcrystalline alkaline earth metal fluoride and a material having an electron transporting property can be used for the composite material. In particular, a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used. Alternatively, a composite material containing an organic compound having a bipyridine skeleton can be preferably used. This can reduce the refractive index of the layer 105X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0271] [Composite material composition example 3] For example, a composite material including a first organic compound having an unshared electron pair and a first metal can be used for the layer 105X. In addition, it is preferable that the total number of electrons of the first organic compound and the first metal is an odd number. In addition, the molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0272] This allows the first organic compound having an unshared electron pair to interact with the first metal to form a Singly Occupied Molecular Orbital (SOMO), and when electrons are injected from the electrode 552X to the layer 105X, the barrier between them can be reduced.

[0273] In addition, the spin density measured by electron spin resonance (ESR) is preferably 1×10 16 spins / cm 3 More preferably, 5×10 16 spins / cm 3 More preferably, 1×10 17 spins / cm 3 The above composite material can be used for layer 105X.

[0274] [Organic compounds with unshared electron pairs] For example, a material having electron transport properties can be used in an organic compound having an unshared electron pair. For example, a compound having an electron-deficient heteroaromatic ring can be used. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. This can reduce the driving voltage of the light-emitting device 550X.

[0275] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) level of -3.6 eV to -2.3 eV. The HOMO and LUMO levels of an organic compound can generally be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, photoabsorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0276] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), etc. can be used as organic compounds having unshared electron pairs. Note that NBPhen has a higher glass transition temperature (Tg) and is more heat resistant than BPhen.

[0277] Furthermore, for example, copper phthalocyanine, which has an odd number of electrons, can be used as the organic compound having an unshared electron pair.

[0278] [First metal] For example, when the electron number of the first organic compound having the unshared electron pair is an even number, a composite material of a first metal and a first organic compound that are in an odd group in the periodic table can be used for the layer 105X.

[0279] For example, manganese (Mn), a metal of Group 7, cobalt (Co), a metal of Group 9, copper (Cu), silver (Ag), and gold (Au), a metal of Group 11, and aluminum (Al) and indium (In), a metal of Group 13, are odd-numbered groups in the periodic table. The elements of Group 11 have a lower melting point than the elements of Group 7 or Group 9, and are suitable for vacuum deposition. In particular, Ag is preferable because of its low melting point. In addition, the moisture resistance of the light-emitting device 550X can be improved by using a metal that is poorly reactive with water or oxygen as the first metal.

[0280] By using Ag for the electrode 552X and the layer 105X, the adhesion between the layer 105X and the electrode 552X can be improved.

[0281] Also, when the number of electrons of the first organic compound having an unshared electron pair is odd, a composite material of the first metal and the first organic compound that belong to an even group in the periodic table can be used for the layer 105X. For example, iron (Fe), which is a metal in Group 8, belongs to an even group in the periodic table.

[0282] [Electride] For example, a substance in which electrons are highly concentrated added to a mixed oxide of calcium and aluminum can be used as a material having electron injection properties.

[0283] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0284] (Embodiment 5) In this embodiment, a structure of a light-emitting device 550X of one embodiment of the present invention will be described with reference to FIG.

[0285] FIG. 8A is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention.

[0286] <Example of configuration of light-emitting device 550X> Moreover, light-emitting device 550X described in this embodiment includes electrode 551X, electrode 552X, unit 103X, and intermediate layer 106X (see FIG. 8(A)). Electrode 552X has a region overlapping with electrode 551X, and unit 103X has a region sandwiched between electrode 551X and electrode 552X. Intermediate layer 106X has a region sandwiched between electrode 552X and unit 103X.

[0287] <<Configuration example 1 of middle layer 106X>> The intermediate layer 106X has a function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied, and can be called a charge generating layer.

[0288] For example, the intermediate layer 106X can be formed using the material having a hole-injecting property which can be used for the layer 104X described in Embodiment 3. Specifically, the intermediate layer 106X can be formed using a composite material.

[0289] For example, a laminated film in which a film containing the composite material and a film containing a material having a hole transporting property are laminated can be used for the intermediate layer 106X. The film containing the material having a hole transporting property is sandwiched between the film containing the composite material and the cathode.

[0290] <<Configuration example 2 of middle layer 106X>> A laminated film in which the layer 106X1 and the layer 106X2 are laminated can be used for the intermediate layer 106X. The layer 106X1 has a region sandwiched between the unit 103X and the electrode 552X, and the layer 106X2 has a region sandwiched between the unit 103X and the layer 106X1.

[0291] Example of Layer 106X1 Configuration For example, the material having a hole-injecting property that can be used for the layer 104X described in Embodiment 3 can be used for the layer 106X1. Specifically, a composite material can be used for the layer 106X1. 4 Ω cm or more 1×10 7 A film having an electrical resistivity of 5×10 4 Ω cm or more 1×10 7 It has an electrical resistivity of 1×10 5 Ω cm or more 1×10 7 It has an electrical resistivity of less than Ω·cm.

[0292] Example of Layer 106X2 Configuration For example, the material that can be used for the layer 105X described in the fourth embodiment can be used for the layer 106X2.

[0293] <<Configuration example 3 of middle layer 106X>> A laminated film in which the layers 106X1, 106X2, and 106X3 are laminated can be used for the intermediate layer 106X. The layer 106X3 has a region sandwiched between the layers 106X1 and 106X2.

[0294] Example of layer 106X3 configuration For example, a material having electron transport properties can be used for the layer 106X3. The layer 106X3 can also be called an electron relay layer. By using the layer 106X3, the layer in contact with the anode side of the layer 106X3 can be separated from the layer in contact with the cathode side of the layer 106X3. The interaction between the layer in contact with the anode side of the layer 106X3 and the layer in contact with the cathode side of the layer 106X3 can be reduced. Electrons can be smoothly supplied to the layer in contact with the anode side of the layer 106X3.

[0295] A substance having a LUMO level between the LUMO level of the substance having an electron-accepting property contained in the layer 106X1 and the LUMO level of the substance contained in the layer 106X2 can be suitably used for the layer 106X3.

[0296] For example, a material having a LUMO level in the range of −5.0 eV or more, preferably −5.0 eV to −3.0 eV, can be used for layer 106X3.

[0297] Specifically, a phthalocyanine-based material can be used for the layer 106X3, such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0298] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0299] (Embodiment 6) In this embodiment, a structure of a light-emitting device 550X of one embodiment of the present invention will be described with reference to FIG. 8B.

[0300] FIG. 8B is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, which has a structure different from that illustrated in FIG. 8A.

[0301] <Example of configuration of light-emitting device 550X> A light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, a unit 103X, an intermediate layer 106X, and a unit 103X2 (see FIG. 8B).

[0302] The unit 103X is sandwiched between the electrode 552X and the electrode 551X, and the intermediate layer 106X is sandwiched between the electrode 552X and the unit 103X.

[0303] The unit 103X2 is sandwiched between the electrode 552X and the intermediate layer 106X. The unit 103X2 has a function of emitting light ELX2.

[0304] In other words, the light-emitting device 550X has a plurality of stacked units between the electrode 551X and the electrode 552X. The number of stacked units is not limited to two, and three or more units may be stacked. A configuration including a plurality of stacked units sandwiched between the electrode 551X and the electrode 552X and an intermediate layer 106X sandwiched between the plurality of units may be referred to as a stacked light-emitting device or a tandem light-emitting device.

[0305] This makes it possible to obtain high-luminance light emission while keeping the current density low, improve reliability, reduce the driving voltage compared to the same luminance, or suppress power consumption.

[0306] 《Unit 103X2 Configuration Example 1》 The unit 103X2 includes a layer 111X2, a layer 112X2, and a layer 113X2. The layer 111X2 is sandwiched between the layer 112X2 and the layer 113X2.

[0307] The configuration that can be used for the unit 103X can be used for the unit 103X2. For example, the same configuration as the unit 103X can be used for the unit 103X2.

[0308] 《Unit 103X2 Configuration Example 2》 Furthermore, a configuration different from that of the unit 103X can be used for the unit 103X2. For example, a configuration that emits light with a different hue from the emission color of the unit 103X can be used for the unit 103X2.

[0309] Specifically, a unit 103X that emits red light and green light and a unit 103X2 that emits blue light can be stacked together. This makes it possible to provide a light-emitting device that emits light of a desired color. For example, it is possible to provide a light-emitting device that emits white light.

[0310] Example of middle layer 106X configuration The intermediate layer 106X has a function of supplying electrons to one of the unit 103X and the unit 103X2, and supplying holes to the other one. For example, the intermediate layer 106X described in the fifth embodiment can be used.

[0311] <How to make the light-emitting device 550X> For example, each layer of the electrode 551X, the electrode 552X, the unit 103X, the intermediate layer 106X, and the unit 103X2 can be formed by using a dry method, a wet method, a vapor deposition method, a droplet discharge method, a coating method, a printing method, etc. Also, different methods can be used to form each component.

[0312] Specifically, light-emitting device 550X can be produced using a vacuum deposition apparatus, an inkjet apparatus, a coating apparatus such as a spin coater, a gravure printing apparatus, an offset printing apparatus, a screen printing apparatus, or the like.

[0313] For example, the electrodes can be formed by a wet method using a paste of a metal material or a sol-gel method. Also, an indium oxide-zinc oxide film can be formed by a sputtering method using a target containing 1 wt% to 20 wt% zinc oxide added to indium oxide. Also, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 wt% to 5 wt% tungsten oxide and 0.1 wt% to 1 wt% zinc oxide to indium oxide.

[0314] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0315] (Embodiment 7) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to FIGS. 9A, 10A, and 10B.

[0316] FIG. 9A is a front view illustrating a structure of a pixel 703 of a display device according to one embodiment of the present invention.

[0317] FIG. 10A is a cross-sectional view taken along line P2-Q2 shown in FIG. 9A, and FIG. 10B is a cross-sectional view illustrating a configuration different from that in FIG. 10A.

[0318] <Pixel 703 Configuration Example 1> The display device described in this embodiment includes a pixel 703. The pixel 703 includes a light-emitting device 550X and a light-emitting device 550Y (see FIG. 10A). The light-emitting device 550Y is adjacent to the light-emitting device 550X.

[0319] The display device includes a substrate 510 and a functional layer 520. The functional layer 520 includes an insulating film 521, and the light emitting device 550X and the light emitting device 550Y are formed on the insulating film 521. The functional layer 520 is sandwiched between the substrate 510 and the light emitting device 550X.

[0320] Example of the configuration of the light-emitting device 550X The light-emitting device 550X includes an electrode 551X, an electrode 552X, and a unit 103X. The electrode 552X overlaps the electrode 551X, and the unit 103X is sandwiched between the electrode 552X and the electrode 551X. The light-emitting device 550X also includes a layer 104X and a layer 105X, and the layer 104X is sandwiched between the unit 103X and the electrode 551X, and the layer 105X is sandwiched between the electrode 552X and the unit 103X. The unit 103X includes a layer 111X, a layer 112X, and a layer 113X.

[0321] For example, the structures described in any of Embodiments 2 to 6 can be used for the light-emitting device 550X.

[0322] Example of the configuration of the light-emitting device 550Y The light-emitting device 550Y includes an electrode 551Y, an electrode 552Y, and a unit 103Y. The electrode 552Y overlaps the electrode 551Y, and the unit 103Y is sandwiched between the electrode 552Y and the electrode 551Y. The light-emitting device 550Y also includes a layer 104Y and a layer 105Y, where the layer 104Y is sandwiched between the unit 103Y and the electrode 551Y, and the layer 105Y is sandwiched between the electrode 552Y and the unit 103Y.

[0323] The electrode 551Y is adjacent to the electrode 551X, with a gap 551XY between the electrode 551Y and the electrode 551X.

[0324] Note that a part of a structure that can be used for the light-emitting device 550X can be used for the light-emitting device 550Y. For example, a part of a conductive film that can be used for the electrode 552X can be used for the electrode 552Y. A structure that can be used for the electrode 551X can be used for the electrode 551Y. A structure that can be used for the layer 104X can be used for the layer 104Y, and a structure that can be used for the layer 105X can be used for the layer 105Y. In this way, some of the common structures can be formed in one step. Furthermore, the manufacturing process can be simplified.

[0325] Furthermore, a configuration that emits light of the same hue as the emission color of the light emitting device 550X can be used for the light emitting device 550Y. For example, both the light emitting device 550X and the light emitting device 550Y may emit light containing blue light and green light.

[0326] For example, a color conversion layer can be disposed over light emitting device 550X to convert blue light into light of a predetermined hue. Another color conversion layer can be disposed over light emitting device 550Y to convert light containing blue and green light into light of another predetermined hue. For example, light containing blue and green light can be converted into green light or red light.

[0327] A colored layer can be disposed over light-emitting device 550X to extract blue light from light containing blue and green light, and another colored layer can be disposed over light-emitting device 550Y to extract green light from light containing blue and green light.

[0328] Also, for example, both the light emitting device 550X and the light emitting device 550Y may emit blue light. A color conversion layer may be disposed over the light emitting device 550X to convert the blue light into light of a predetermined hue. Another color conversion layer may be disposed over the light emitting device 550Y to convert the blue light into light of another predetermined hue. The blue light may be converted into, for example, green light or red light.

[0329] Alternatively, both the light emitting device 550X and the light emitting device 550Y may emit white light. A colored layer may be disposed over the light emitting device 550X to extract light of a predetermined hue from the white light. Another colored layer may be disposed over the light emitting device 550Y to extract light of another predetermined hue from the white light.

[0330] Furthermore, a configuration for emitting light of a different hue from the emission color of the light emitting device 550X can be used for the light emitting device 550Y. For example, the hue of the light ELY emitted by the unit 103Y can be made different from the hue of the light ELX.

[0331] <Pixel 703 Configuration Example 2> Further, the pixel 703 described in this embodiment mode has an insulating film 528 (see FIG. 10A).

[0332] <Configuration example of insulating film 528> The insulating film 528 has openings, one of which overlaps with the electrode 551X and the other of which overlaps with the electrode 551Y. The insulating film 528 also overlaps with the gap 551XY.

[0333] <<Example of gap 551XY configuration>> The gap 551XY sandwiched between the electrode 551X and the electrode 551Y has, for example, a groove shape. This forms a step along the groove. Also, a discontinuity or a thin portion is formed between the film deposited on the gap 551XY and the film deposited on the electrode 551X.

[0334] For example, when an anisotropic film formation method such as thermal evaporation is used, a discontinuity or a thin portion is formed along the step in the region 104XY sandwiched between the layer 104X and the layer 104Y.

[0335] This can suppress, for example, the current flowing through the region 104XY. Also, the current flowing between the layer 104X and the layer 104Y can be suppressed. Also, it can suppress the occurrence of a phenomenon in which the adjacent light-emitting device 550Y unintentionally emits light due to the operation of the light-emitting device 550X.

[0336] <Configuration Example 3 of Pixel 703> The display device described in this embodiment includes a pixel 703. The pixel 703 includes a light-emitting device 550X and a light-emitting device 550Y (see FIG. 10B). The light-emitting device 550Y is adjacent to the light-emitting device 550X.

[0337] 10(A) in that the display device has a portion or the entire configuration of the light-emitting device 550X or the light-emitting device 550Y removed from the portion overlapping the gap 551XY, and has films 529_1, 529_2, and 529_3 instead of the insulating film 528. Here, the different portions will be described in detail, and the above description will be used for portions having the same configuration.

[0338] In this specification, a device fabricated using a metal mask or an FMM (fine metal mask, high-definition metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0339] 《Example of membrane 529_1》 The film 529_1 has openings, one of which overlaps with the electrode 551X and the other of which overlaps with the electrode 551Y (see FIG. 10(B)). The film 529_1 also has openings which overlap with the gaps 551XY. For example, a film containing a metal, a metal oxide, an organic material, or an inorganic insulating material can be used for the film 529_1. Specifically, a light-shielding metal film can be used. This can block light irradiated in a processing step, thereby suppressing the occurrence of a phenomenon in which the characteristics of the light-emitting device are impaired by the light.

[0340] 《Example of membrane 529_2》 The film 529_2 has openings, one of which overlaps with the electrode 551X and the other of which overlaps with the electrode 551Y. The film 529_2 also overlaps with the gap 551XY.

[0341] The film 529_2 has an area in contact with the layer 104X and the unit 103X.

[0342] Additionally, the film 529_2 has an area in contact with the layer 104Y and the unit 103Y.

[0343] Moreover, the film 529_2 has a region in contact with the insulating film 521. For example, the film 529_2 can be formed by using an atomic layer deposition (ALD) method. This allows a film with good coverage to be formed. Specifically, a metal oxide film or the like can be used for the film 529_2. For example, aluminum oxide can be used.

[0344] "Example of membrane 529_3" The film 529_3 has an opening, the opening 529_3X overlaps with the electrode 551X, and the opening 529_3Y overlaps with the electrode 551Y. The film 529_3 fills a groove formed in a region overlapping with the gap 551XY. For example, the film 529_3 can be formed using a photosensitive resin. Specifically, an acrylic resin or the like can be used.

[0345] This allows, for example, electrical insulation between the layer 104X and the layer 104Y. Also, for example, current flowing through the region 104XY can be suppressed. Also, the occurrence of a phenomenon in which the adjacent light-emitting device 550Y unintentionally emits light due to the operation of the light-emitting device 550X can be suppressed. Also, the size of the step between the upper surface of the unit 103X and the upper surface of the unit 103Y can be reduced. Also, the occurrence of a phenomenon in which a discontinuity or a thin film portion is formed due to the step between the electrode 552X and the electrode 552Y can be suppressed. Also, one conductive film can be used for the electrode 552X and the electrode 552Y.

[0346] For example, a photolithography technique can be used to remove a part or the whole of the configuration that can be used for light emitting device 550X or light emitting device 550Y from the portion that overlaps with gap 551XY.

[0347] Specifically, in a first step, a first film, which will later become the unit 103Y, is formed on the gap 551XY.

[0348] In a second step, a second film, which will later become film 529_1, is formed on the first film.

[0349] In a third step, openings overlapping the gaps 551XY are formed in the second film using photolithography.

[0350] In a fourth step, a portion of the first film is removed using the second film as a resist. For example, the first film is removed from the region overlapping with the gap 551XY by using a dry etching method. Specifically, the first film can be removed using a gas containing oxygen. As a result, a groove-like structure is formed in the region overlapping with the gap 551XY.

[0351] In a fifth step, a third film, which will become film 529_2, is formed on the second film, for example, using ALD (Atomic Layer Deposition).

[0352] In a sixth step, the film 529_3 is formed using, for example, a photosensitive polymer, so that the film 529_3 fills the groove-like structure formed in the region overlapping with the gap 551XY.

[0353] In a seventh step, an opening overlapping the electrode 551Y is formed in the third film and the second film by etching to form a film 529_2 and a film 529_1.

[0354] In an eighth step, a layer 105Y is formed on the unit 103Y, and an electrode 552Y is formed on the layer 105Y.

[0355] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0356] (Embodiment 8) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to FIG. 9B, FIG. 11A, and FIG. 11B.

[0357] FIG. 9A is a front view illustrating a structure of a pixel 703 of a display device according to one embodiment of the present invention.

[0358] FIG. 11A is a cross-sectional view taken along line P3-Q3 shown in FIG. 9B, and FIG. 11B is a cross-sectional view illustrating a configuration different from that in FIG. 11A.

[0359] <Configuration Example 1 of Pixel 703> The display device described in this embodiment includes a pixel 703. The pixel 703 includes a light-emitting device 550X and a photoelectric conversion device 550S (see FIG. 11A). The photoelectric conversion device 550S is adjacent to the light-emitting device 550X.

[0360] The display device includes a substrate 510 and a functional layer 520. The functional layer 520 includes an insulating film 521, and the light-emitting device 550X and the photoelectric conversion device 550S are formed on the insulating film 521. The functional layer 520 is sandwiched between the substrate 510 and the light-emitting device 550X.

[0361] Example of the configuration of the light-emitting device 550X Light-emitting device 550X includes electrode 551X, electrode 552X, and unit 103X. Electrode 552X overlaps electrode 551X, and unit 103X is sandwiched between electrode 552X and electrode 551X. Light-emitting device 550X also includes layer 104X and layer 105X, where layer 104X is sandwiched between unit 103X and electrode 551X, and layer 105X is sandwiched between electrode 552X and unit 103X.

[0362] For example, the light-emitting device 550X described in any of Embodiments 2 to 6 can be used as the light-emitting device 550X.

[0363] 《Configuration example 1 of photoelectric conversion device 550S》 The photoelectric conversion device 550S has an electrode 551S, an electrode 552S, and a unit 103S. The electrode 552S overlaps the electrode 551S, and the unit 103S is sandwiched between the electrode 552S and the electrode 551S. The photoelectric conversion device 550S also has a layer 104S and a layer 105S, where the layer 104S is sandwiched between the unit 103S and the electrode 551S, and the layer 105S is sandwiched between the electrode 552S and the unit 103S.

[0364] Electrode 551S is adjacent to electrode 551X, with gap 551XS between electrode 551S and electrode 551X.

[0365] Note that part of the structure that can be used for the light-emitting device 550X described in any of Embodiments 2 to 6 can be used for the photoelectric conversion device 550S. For example, part of a conductive film that can be used for the electrode 552X can be used for the electrode 552S, and a structure that can be used for the electrode 551X can be used for the electrode 551S. A structure that can be used for the layer 104X can be used for the layer 104S, and a structure that can be used for the layer 105X can be used for the layer 105S. In this way, part of the structure can be shared. Furthermore, the manufacturing process can be simplified.

[0366] Note that photoelectric conversion device 550S differs from light-emitting device 550X in that photoelectric conversion device 550S has unit 103S having a function of converting light into electric current, instead of unit 103X having a function of emitting light. Here, the different parts will be described in detail, and the above description will be used for parts having the same configuration.

[0367] 《Unit 103S Configuration Example 1》 The unit 103S has a single layer structure or a laminated structure. For example, in addition to a photoelectric conversion layer, a layer selected from functional layers such as a hole transport layer, an electron transport layer, and a carrier block layer can be used for the unit 103S.

[0368] The unit 103S includes a layer 114S, a layer 112S, and a layer 113S (see FIG. 11(A)). The layer 114S is sandwiched between the layer 112S and the layer 113S. The layer 112S is sandwiched between the electrode 551S and the layer 114S, and the layer 113S is sandwiched between the electrode 552S and the layer 114S.

[0369] The unit 103S has a function of absorbing light hv and supplying electrons to one electrode and holes to the other electrode. For example, the unit 103S supplies holes to the electrode 551S and electrons to the electrode 552S.

[0370] Note that a part of the configuration that can be used for the unit 103X described in the second embodiment can be used for the unit 103S. For example, a structure that can be used for the layer 112X can be used for the layer 112S, and a structure that can be used for the layer 113X can be used for the layer 113S. This allows a part of the configuration to be common. In addition, the manufacturing process can be simplified.

[0371] Example 1 of Layer 114S The layer 114S can be called a photoelectric conversion layer. The layer 114S absorbs light hv and supplies electrons to a layer in contact with one side and holes to a layer in contact with the other side. For example, the layer 114S supplies holes to the layer 112S and electrons to the layer 113S. For example, a material that can be used in an organic solar cell can be used for the layer 114S. Specifically, an electron-accepting material and an electron-donating material can be used for the layer 114S.

[0372] [Examples of electron-accepting materials] For example, fullerene derivatives, non-fullerene electron acceptors, etc. can be used as the electron accepting material.

[0373] Examples of electron-accepting materials include C 60 Fullerene, C 70 Fullerene, [6,6]-phenyl-C 71 -Butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C 61 -butyric acid methyl ester (abbreviation: PC61BM), 1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 (Abbreviation: ICBA) etc. can be used.

[0374] As the non-fullerene electron acceptor, for example, a perylene derivative, a compound having a dicyanomethyleneindanone group, etc., can be used. N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: Me-PTCDI), etc. can be used.

[0375] [Examples of electron-donating materials] For example, phthalocyanine compounds, tetracene derivatives, quinacridone derivatives, rubrene derivatives, etc. can be used as the electron donating material.

[0376] Examples of electron donating materials that can be used include copper (II) phthalocyanine (abbreviation: CuPc), tin (II) phthalocyanine (abbreviation: SnPc), zinc phthalocyanine (abbreviation: ZnPc), tetraphenyldibenzoperiflanthene (abbreviation: DBP), and rubrene.

[0377] 《Configuration Example 2 of Layer 114S》 For example, a single layer structure or a laminated structure can be used for the layer 114S. Specifically, a bulk heterojunction type structure can be used for the layer 114S. Alternatively, a heterojunction type structure can be used for the layer 114S.

[0378] [Example of mixed material composition] For example, a mixed material containing an electron accepting material and an electron donating material can be used for the layer 114S (see FIG. 11A). Note that a structure in which a mixed material containing an electron accepting material and an electron donating material is used for the layer 114S can be called a bulk heterojunction type.

[0379] Specifically, C 70 A mixed material including fullerenes and DBP can be used for layer 114S.

[0380] [Example of heterozygous type] Layer 114N and layer 114P can be used for layer 114S (see FIG. 11(B)). Layer 114N is sandwiched between one electrode and layer 114P, and layer 114P is sandwiched between layer 114N and the other electrode. For example, layer 114N is sandwiched between electrode 552S and layer 114P, and layer 114P is sandwiched between layer 114N and electrode 551S.

[0381] An n-type semiconductor can be used for the layer 114N. For example, Me-PTCDI can be used for the layer 114N.

[0382] Also, a p-type semiconductor can be used for the layer 114P. For example, rubrene can be used for the layer 114P.

[0383] The photoelectric conversion device 550S having a configuration in which the layer 114P is in contact with the layer 114N can be called a PN junction type photodiode.

[0384] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0385] (Embodiment 9) In this embodiment, a display module according to one embodiment of the present invention will be described.

[0386] <Display module> FIG. 12 is a perspective view illustrating the configuration of the display module 280. As shown in FIG.

[0387] The display module 280 has the display device 100 and an FPC 290 or a connector. The FPC 290 is supplied with a data signal or a power supply potential from the outside, and supplies the data signal or the power supply potential to the display device 100. An IC may be mounted on the FPC 290. The connector is a mechanical part that electrically connects conductors, and the conductors can electrically connect the display device 100 to a component that is to be connected to the display device 100. For example, the FPC 290 can be used as the conductor. The connector can also disconnect the display device 100 from the connected component.

[0388] 《Display device 100A》 13 is a cross-sectional view illustrating the configuration of the display device 100A. The display device 100A can be used, for example, as the display device 100 of the display module 280. The substrate 301 corresponds to the substrate 71 in FIG.

[0389] The display device 100A includes a substrate 301, a transistor 310, an element isolation layer 315, an insulating layer 261, a capacitor 240, an insulating layer 255a, an insulating layer 255b, and a plurality of light-emitting devices 61W. The insulating layer 261 is provided on the substrate 301, and the transistor 310 is located between the substrate 301 and the insulating layer 261. The insulating layer 255a is provided on the insulating layer 261, the capacitor 240 is located between the insulating layer 261 and the insulating layer 255a, and the insulating layer 255a is located between the light-emitting device 61W and the capacitor 240.

[0390] [Transistor 310] The transistor 310 has a conductive layer 311, a pair of low-resistance regions 312, an insulating layer 313, and an insulating layer 314, and forms a channel in a part of a substrate 301. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The substrate 301 has a pair of low-resistance regions 312 doped with impurities. The regions function as a source and a drain. The side surfaces of the conductive layer 311 are covered with the insulating layer 314.

[0391] An isolation layer 315 is embedded in the substrate 301 and is located between two adjacent transistors 310 .

[0392] [Capacity 240] Capacitor 240 has conductive layer 241, conductive layer 245 and insulating layer 243, where insulating layer 243 is located between conductive layer 241 and conductive layer 245. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0393] The conductive layer 241 is located on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 275 embedded in the insulating layer 261. The insulating layer 243 covers the conductive layer 241. The conductive layer 245 overlaps the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0394] [Insulating layer 255] The insulating layer 255 includes an insulating layer 255a, an insulating layer 255b, and an insulating layer 255c, where the insulating layer 255b is located between the insulating layer 255a and the insulating layer 255c.

[0395] [Light emitting device 61W] The light emitting device 61W is provided on the insulating layer 255c. For example, the light emitting devices described in the second to sixth embodiments can be applied to the light emitting device 61W. The light emitting device 61W can emit light including blue light. For example, the light emitting device 61W can emit blue light, light including blue light and green light, or white light.

[0396] Light emitting device 61W includes conductive layer 171 and EL layer 172W, where EL layer 172W covers the top and side surfaces of conductive layer 171. Additionally, sacrificial layer 270 is located on EL layer 172W.

[0397] The conductive layer 171 is electrically connected to one of the source or drain of the transistor 310 via a plug 256 embedded in the insulating layers 243, 255a, 255b, and 255c, the conductive layer 241 embedded in the insulating layer 254, and a plug 275 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0398] [Protective layer 271, insulating layer 278, protective layer 273, adhesive layer 122] The protective layer 271 and the insulating layer 278 are located between adjacent light emitting devices 61W, and the insulating layer 278 is provided on the protective layer 271. In addition, a protective layer 273 is provided on the light emitting device 61W.

[0399] The adhesive layer 122 bonds the protective layer 273 and the substrate 120 together.

[0400] [Substrate 120] 12. For example, a light-shielding layer may be provided on the surface of the substrate 120 on the adhesive layer 122 side. Various optical members may be disposed on the outer side of the substrate 120.

[0401] A film can be used as the substrate. In particular, a film with low water absorption can be suitably used. For example, the water absorption is preferably 1% or less, more preferably 0.1% or less. This can suppress dimensional changes in the film, as well as the occurrence of wrinkles and the like. Also, changes in the shape of the display device can be suppressed.

[0402] For example, a polarizing plate, a retardation plate, a light diffusing layer (for example, a diffusion film), an anti-reflection layer, a light collecting film, and the like can be used as the optical member.

[0403] A material with high optical isotropy, in other words, a material with low birefringence, can be used for the substrate, and a circular polarizing plate can be laminated on the display device. For example, a material with an absolute value of retardation (phase difference) value of 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less can be used for the substrate. For example, a triacetyl cellulose (TAC, also called cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, an acrylic resin film, etc. can be used as a film with high optical isotropy.

[0404] In addition, a surface protection layer such as an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO x layer), DLC (Diamond-Like Carbon), Aluminum Oxide (AlO x ), polyester-based materials, polycarbonate-based materials, or the like can be used for the surface protective layer. Note that a material having a high transmittance for visible light can be suitably used for the surface protective layer. Also, a material having a high hardness can be suitably used for the surface protective layer.

[0405] Display device 100A also has layers 183R, 183G, and 183B. Layer 183R has an area that overlaps with one light-emitting device 61W, layer 183G has an area that overlaps with another light-emitting device 61W, and layer 183B has an area that overlaps with yet another light-emitting device 61W.

[0406] The layer 183R includes a layer CFR1 that includes a color conversion material, the layer 183G includes a layer CFG1 that includes a color conversion material, and the layer 183B includes a coloring material and functions as a color filter.

[0407] As a result, for example, layer 183R can convert the light emitted by light-emitting device 61W into red light and transmit it, layer 183G can convert the light emitted by light-emitting device 61W into green light and transmit it, and layer 183B can transmit the blue light contained in the light emitted by light-emitting device 61W.

[0408] 《Display device 100C》 Fig. 14 is a cross-sectional view for explaining the configuration of the display device 100C. The display device 100C can be used, for example, as the display device 100 of the display module 280 (see Fig. 12). In the following explanation of the display device, explanations of parts similar to those of the display device previously explained may be omitted.

[0409] The display device 100C includes a substrate 301B and a substrate 301A. The display device 100C includes a transistor 310B, a capacitor 240, a plurality of light emitting devices 61W, and a transistor 310A. The transistor 310A forms a channel in a part of the substrate 301A, and the transistor 310B forms a channel in a part of the substrate 301B.

[0410] [Insulating layer 345, insulating layer 346] Insulating layer 345 contacts the lower surface of substrate 301B, and insulating layer 346 is located on insulating layer 261. For example, an inorganic insulating film that can be used for protective layer 273 can be used for insulating layer 345 and insulating layer 346. Insulating layer 345 and insulating layer 346 function as protective layers and can suppress the phenomenon in which impurities diffuse into substrate 301B and substrate 301A.

[0411] [Plug 343] The plug 343 penetrates the substrate 301B and the insulating layer 345. The insulating layer 344 covers the side surface of the plug 343. For example, the inorganic insulating film that can be used for the protective layer 273 can be used for the insulating layer 344. The insulating layer 344 functions as a protective layer and can suppress the phenomenon of impurities diffusing into the substrate 301B.

[0412] [Conductive layer 342] The conductive layer 342 is located between the insulating layer 345 and the insulating layer 346. It is preferable that the conductive layer 342 is embedded in the insulating layer 335, and a surface formed by the conductive layer 342 and the insulating layer 335 is flattened. The conductive layer 342 is electrically connected to the plug 343.

[0413] [Conductive layer 341] Conductive layer 341 is located between insulating layer 346 and insulating layer 335. Moreover, conductive layer 341 is preferably embedded in insulating layer 336, and a surface formed by conductive layer 341 and insulating layer 336 is preferably flattened. Conductive layer 341 is bonded to conductive layer 342. As a result, substrate 301A is electrically connected to substrate 301B.

[0414] It is preferable that the conductive layer 341 is made of the same conductive material as the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above-mentioned elements (for example, a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) can be used. In particular, it is preferable to use copper for the conductive layer 341 and the conductive layer 342. This allows the application of Cu-Cu (copper-copper) direct bonding technology (technology for achieving electrical conduction by connecting Cu (copper) pads together).

[0415] 《Display device 100D》 15 is a cross-sectional view illustrating the configuration of the display device 100D. The display device 100D can be used, for example, in the display device 100 of the display module 280 (see FIG. 12).

[0416] The display device 100D has a bump 347, and the bump 347 joins the conductive layer 341 and the conductive layer 342. The bump 347 also electrically connects the conductive layer 341 and the conductive layer 342. For example, a conductive material including gold (Au), nickel (Ni), indium (In), tin (Sn), or the like can be used for the bump 347. For example, solder can also be used for the bump 347.

[0417] The display device 100D also has an adhesive layer 348. The adhesive layer 348 bonds the insulating layer 345 and the insulating layer 346 together.

[0418] 《Display device 100E》 16 is a cross-sectional view illustrating a configuration of a display device 100E. The display device 100E can be used, for example, as the display device 100 of the display module 280 (see FIG. 12). The substrate 331 corresponds to the substrate 71 in FIG. 12. An insulating substrate or a semiconductor substrate can be used for the substrate 331. The display device 100E includes a transistor 320. Note that the display device 100E differs from the display device 100A in that the transistor is an OS transistor.

[0419] [Insulating layer 332] The insulating layer 332 is provided over a substrate 331. For example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film can be used for the insulating layer 332. Specifically, an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used for the insulating layer 332. This can prevent impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320. In addition, oxygen can be prevented from being released from the semiconductor layer 321 toward the insulating layer 332.

[0420] [Transistor 320] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0421] The conductive layer 327 is provided over the insulating layer 332, and functions as a first gate electrode of the transistor 320. The insulating layer 326 covers the conductive layer 327. Part of the insulating layer 326 functions as a first gate insulating layer. The insulating layer 326 includes an oxide insulating film at least in a region in contact with the semiconductor layer 321. Specifically, a silicon oxide film or the like is preferably used. The insulating layer 326 has a planarized upper surface. The semiconductor layer 321 is provided over the insulating layer 326. A metal oxide film having semiconductor characteristics can be used for the semiconductor layer 321. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321, and functions as a source electrode and a drain electrode.

[0422] [Insulating layer 328, insulating layer 264] The insulating layer 328 covers top surfaces and side surfaces of the pair of conductive layers 325, side surfaces of the semiconductor layer 321, and the like. The insulating layer 264 is provided over the insulating layer 328 and functions as an interlayer insulating layer. The insulating layer 328 and the insulating layer 264 have openings that reach the semiconductor layer 321. For example, an insulating film similar to that of the insulating layer 332 can be used for the insulating layer 328. Thus, the insulating layer 328 can prevent a phenomenon in which impurities such as water or hydrogen are diffused from the insulating layer 264 to the semiconductor layer 321. In addition, oxygen can be prevented from being released from the semiconductor layer 321.

[0423] [Insulating layer 323] Inside the opening, the insulating layer 323 contacts the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321.

[0424] [Conductive layer 324] The conductive layer 324 is embedded in the opening in contact with the insulating layer 323. The conductive layer 324 has a planarized upper surface, and its height is equal to or approximately equal to the upper surfaces of the insulating layer 323 and the insulating layer 264. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0425] [Insulating layer 329, insulating layer 265] The insulating layer 329 covers the conductive layer 324, the insulating layer 323, and the insulating layer 264. The insulating layer 265 is provided over the insulating layer 329 and functions as an interlayer insulating layer. For example, an insulating film similar to the insulating layers 328 and 332 can be used for the insulating layer 329. This can prevent a phenomenon in which impurities such as water or hydrogen diffuse from the insulating layer 265 to the transistor 320, for example.

[0426] [Plug 274] The plug 274 is embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328, and is electrically connected to one of the pair of conductive layers 325. The plug 274 has a conductive layer 274a and a conductive layer 274b. The conductive layer 274a is in contact with the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. The conductive layer 274a also covers a part of the upper surface of the conductive layer 325. The conductive layer 274b is in contact with the upper surface of the conductive layer 274a. For example, a conductive material in which hydrogen and oxygen are unlikely to diffuse can be suitably used for the conductive layer 274a.

[0427] 《Display device 100F》 17 is a cross-sectional view illustrating a configuration of a display device 100F. The display device 100F has a configuration in which a transistor 320A and a transistor 320B are stacked. Both the transistor 320A and the transistor 320B include an oxide semiconductor, and a channel is formed in the oxide semiconductor. Note that the configuration is not limited to a stack of two transistors, and may be a stack of, for example, three or more transistors.

[0428] The transistor 320A and its periphery have the same configuration as the transistor 320 and its periphery of the display device 100E. The transistor 320B and its periphery have the same configuration as the transistor 320 and its periphery of the display device 100E.

[0429] 《Display device 100G》 18 is a cross-sectional view illustrating a configuration of a display device 100G. The display device 100G has a stacked configuration of a transistor 310 and a transistor 320. A channel of the transistor 310 is formed in a substrate 301. The transistor 320 includes a metal oxide, and a channel is formed in the oxide semiconductor.

[0430] An insulating layer 261 covers the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 covers the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. An insulating layer 263 and an insulating layer 332 cover the conductive layer 252. Note that the conductive layer 251 and the conductive layer 252 each function as a wiring.

[0431] The transistor 320 is provided over the insulating layer 332, and the insulating layer 265 covers the transistor 320. In addition, the capacitor 240 is provided over the insulating layer 265, and the capacitor 240 is electrically connected to the transistor 320 by a plug 274.

[0432] For example, the transistor 320 can be used as a transistor constituting a pixel circuit. For example, the transistor 310 can be used as a transistor constituting a pixel circuit or a driver circuit (such as a gate driver circuit or a source driver circuit) for driving the pixel circuit. The transistors 310 and 320 can be used in various circuits such as an arithmetic circuit or a memory circuit. This allows not only a pixel circuit but also a driver circuit to be arranged directly under a light-emitting device. Furthermore, the display device can be made smaller in size than a configuration in which a driver circuit is provided around a display region.

[0433] This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0434] (Embodiment 10) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0435] <Display module> FIG. 19 is a perspective view illustrating the configuration of a display module.

[0436] The display module has a display device 100H, an IC (integrated circuit), and an FPC 177 or a connector. The display device 100H is electrically connected to the IC 176 and the FPC 177. The FPC 177 receives signals and power from the outside and supplies the signals and power to the display device 100H. The connector is a mechanical part that electrically connects conductors, and the conductors can electrically connect the display device 100H to a component that is to be connected to it. For example, the FPC 177 can be used as the conductor. The connector can also disconnect the display device 100H from the component that is to be connected to it.

[0437] The display module includes an IC 176. For example, the IC 176 can be provided on the substrate 14b using a COG (Chip On Glass) method or the like. Also, the IC 176 can be provided on the FPC using a COF (Chip On Film) method or the like. For example, a gate driver circuit or a source driver circuit or the like can be used for the IC 176.

[0438] 《Display device 100H》 FIG. 20A is a cross-sectional view illustrating the configuration of a display device 100H.

[0439] The display device 100H has a display unit 37b, a connection unit 140, a circuit 164, wiring 165, and the like. The display device 100H has a substrate 16b and a substrate 14b, and the substrate 16b is bonded to the substrate 14b. The display device 100H has one or more connection units 140. The connection unit 140 can be provided outside the display unit 37b. For example, the connection unit 140 can be provided along one side of the display unit 37b. Or the connection unit 140 can be provided so as to surround multiple sides, for example, four sides. In the connection unit 140, a common electrode of the light-emitting device is electrically connected to a conductive layer, and the conductive layer supplies a predetermined potential to the common electrode.

[0440] The wiring 165 receives signals and power from the FPC 177 or the IC 176. The wiring 165 supplies signals and power to the display unit 37b and the circuit 164.

[0441] For example, the circuit 164 may be a gate driver circuit.

[0442] The display device 100H includes a substrate 14b, a substrate 16b, a transistor 201, a transistor 205, and a plurality of light-emitting devices 63W (see FIG. 20A).

[0443] The light-emitting device 63W can emit light that includes blue light, for example, blue light, light that includes blue light and green light, or white light.

[0444] Display device 100H includes layers 183R, 183G, and 183B.

[0445] [Layer 183R, Layer 183G, and Layer 183B] Layer 183R has an area that overlaps one light-emitting device 63W, layer 183G has an area that overlaps another light-emitting device 63W, and layer 183B has an area that overlaps yet another light-emitting device 63W.

[0446] The layer 183R includes a layer CFR1 that includes a color conversion material, the layer 183G includes a layer CFG1 that includes a color conversion material, and the layer 183B includes a coloring material and functions as a color filter.

[0447] As a result, for example, layer 183R can convert the light emitted by light-emitting device 63W into red light and transmit it, layer 183G can convert the light emitted by light-emitting device 63W into green light and transmit it, and layer 183B can transmit the blue light contained in the light emitted by light-emitting device 63W.

[0448] Various optical members may be disposed on the outer side of the substrate 16b, such as a polarizing plate, a retardation plate, a light diffusing layer (such as a diffusion film), an anti-reflection layer, and a light collecting film.

[0449] The light-emitting device 63W includes a conductive layer 171 and an EL layer 172W. For example, any of the light-emitting devices described in any of the second to sixth embodiments can be used for the light-emitting device 63W.

[0450] The light-emitting device 63W includes a conductive layer 171 that functions as a pixel electrode. The conductive layer 171 includes a recess that overlaps with openings provided in the insulating layer 214, the insulating layer 215, and the insulating layer 213. The transistor 205 includes a conductive layer 222b that is electrically connected to the conductive layer 171.

[0451] The display device 100H includes an insulating layer 272. The insulating layer 272 covers the end portions of the conductive layer 171 and fills recesses in the conductive layer 171 (see FIG. 20A).

[0452] The display device 100H has a protective layer 273 and an adhesive layer 142. The protective layer 273 covers the plurality of light-emitting devices 63W. The adhesive layer 142 bonds the protective layer 273 and the substrate 16b. The adhesive layer 142 fills the space between the substrate 16b and the protective layer 273. For example, the adhesive layer 142 may be formed in a frame shape so as not to overlap with the light-emitting devices, and a resin different from the adhesive layer 142 may be filled in the area surrounded by the adhesive layer 142, the substrate 16b, and the protective layer 273. Alternatively, the area may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure. For example, a material that can be used for the adhesive layer 122 may be applied to the adhesive layer 142.

[0453] The display device 100H has a connection portion 140, and the connection portion 140 includes a conductive layer 168. Note that the conductive layer 168 is supplied with a power supply potential. The light-emitting device 63W has a conductive layer 173, and the conductive layer 168 is electrically connected to the conductive layer 173, and the conductive layer 173 is supplied with a power supply potential. Note that the conductive layer 173 functions as a common electrode. Also, for example, the conductive layer 171 and the conductive layer 168 can be formed by processing one conductive film.

[0454] The display device 100H is a top emission type. The light emitting device 63W emits light toward the substrate 16b. The conductive layer 171 includes a material that reflects visible light, and the conductive layer 173 includes a material that transmits visible light.

[0455] [Insulating layer 211, insulating layer 213, insulating layer 215, insulating layer 214] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order on the substrate 14b. The number of insulating layers is not limited, and each may be a single layer or two or more layers.

[0456] For example, an inorganic insulating film can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. For example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. A hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may also be used. Two or more of the above insulating films may be stacked.

[0457] The insulating layer 215 and the insulating layer 214 cover the transistor. The insulating layer 214 functions as a planarization layer. For example, a material through which impurities such as water and hydrogen are unlikely to diffuse is preferably used for the insulating layer 215 or the insulating layer 214. This can effectively prevent impurities from diffusing into the transistor from the outside. Furthermore, the reliability of the display device can be improved.

[0458] For example, an organic insulating layer can be suitably used for the insulating layer 214. Specifically, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used for the organic insulating layer. A laminated structure of an organic insulating layer and an inorganic insulating layer can be used for the insulating layer 214. This allows the outermost layer of the insulating layer 214 to be used as an etching protection layer. For example, when processing the conductive layer 171 into a predetermined shape, a phenomenon in which a recess is formed in the insulating layer 214 can be suppressed in order to avoid this.

[0459] [Transistor 201, Transistor 205] Both the transistor 201 and the transistor 205 are formed on a substrate 14b. These transistors can be manufactured using the same material and through the same process.

[0460] The transistor 201 and the transistor 205 each include a conductive layer 221, an insulating layer 211, a conductive layer 222a and a conductive layer 222b, a semiconductor layer 231, an insulating layer 213, and a conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The conductive layer 221 functions as a gate, and the insulating layer 211 functions as a first gate insulating layer. The conductive layer 222a and the conductive layer 222b function as a source and a drain. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. The conductive layer 223 functions as a gate, and the insulating layer 213 functions as a second gate insulating layer. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.

[0461] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. In addition, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0462] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0463] The crystallinity of the semiconductor layer of the transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in a part thereof) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of the transistor characteristics.

[0464] A semiconductor layer of the transistor preferably contains a metal oxide, that is, an OS transistor is preferably used as a transistor included in the display device of this embodiment.

[0465] [Semiconductor layer] For example, indium oxide, gallium oxide, and zinc oxide can be used for the semiconductor layer. In addition, the metal oxide preferably has two or three selected from indium, element M, and zinc. The element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0466] In particular, as the metal oxide used in the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0467] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2 :3 or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, and In:M:Zn=5:2:5 or a composition in the vicinity thereof. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0468] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, it includes cases where, when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. When describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, it includes cases where, when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is greater than 5 and 7 or less. When describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, it includes cases where, when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0469] The semiconductor layer may have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer with a composition of In:M:Zn=1:3:4 [atomic ratio] or a composition close thereto and a second metal oxide layer with a composition of In:M:Zn=1:1:1 [atomic ratio] or a composition close thereto provided on the first metal oxide layer can be preferably used. In addition, it is particularly preferable to use gallium or aluminum as the element M.

[0470] Also, for example, a laminated structure of any one selected from indium oxide, indium gallium oxide, and IGZO, and any one selected from IAZO, IAGZO, and ITZO (registered trademark), or the like may be used.

[0471] Examples of oxide semiconductors having crystallinity include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0472] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS: Low Temperature Poly Silicon) in a semiconductor layer (also called an LTPS transistor) may be used. An LTPS transistor has high field effect mobility and good frequency characteristics.

[0473] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as data driver circuits) can be built on the same substrate as the display unit, simplifying the external circuits mounted on the display device and reducing component and mounting costs.

[0474] An OS transistor has a much higher field-effect mobility than a transistor using amorphous silicon. In addition, the OS transistor has a significantly smaller source-drain leakage current (also called off-state current) in an off state, and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. In addition, the use of an OS transistor can reduce the power consumption of a display device.

[0475] Furthermore, in order to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a drive transistor included in the pixel circuit. Since an OS transistor has a higher withstand voltage between the source and drain compared to a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0476] Furthermore, when the transistor is driven in the saturation region, the OS transistor can reduce the change in source-drain current with respect to the change in gate-source voltage compared to the Si transistor. Therefore, by using the OS transistor as the drive transistor included in the pixel circuit, the current flowing between the source and drain can be precisely determined by controlling the gate-source voltage. Therefore, the amount of current flowing to the light-emitting device can be controlled. This allows the gradation in the pixel circuit to be increased.

[0477] Furthermore, in terms of the saturation characteristics of the current that flows when the transistor is driven in the saturation region, the OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. For this reason, by using an OS transistor as a drive transistor, for example, a stable current can be passed through a light-emitting device even when the current-voltage characteristics of the light-emitting device vary. In other words, when the OS transistor is driven in the saturation region, the source-drain current hardly changes even when the source-drain voltage is increased. This makes it possible to stabilize the light emission luminance of the light-emitting device.

[0478] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to suppress floating black levels, increase light emission luminance, achieve multiple gradations, and suppress variations in light-emitting devices.

[0479] The transistors included in the circuit 164 and the transistors included in the display portion 107 may have the same structure or different structures. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 107 may all have the same structure or may have two or more types.

[0480] All the transistors included in the display portion 107 may be OS transistors, or all the transistors included in the display portion 107 may be Si transistors. Alternatively, some of the transistors included in the display portion 107 may be OS transistors and the rest may be Si transistors.

[0481] For example, by using both an LTPS transistor and an OS transistor in the display unit 107, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined is sometimes called LTPO. Note that, for example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling the conduction / non-conduction of a wiring, and to use an LTPS transistor as a transistor for controlling a current.

[0482] For example, one of the transistors in the display unit 107 functions as a transistor for controlling a current flowing through the light-emitting device, and can be called a driving transistor. One of the source and the drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This can increase the current flowing through the light-emitting device.

[0483] Meanwhile, the other transistor in the display unit 107 functions as a switch for controlling selection / non-selection of a pixel and can be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and the drain is electrically connected to a signal line. It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even if the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0484] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0485] Note that a display device according to one embodiment of the present invention has an OS transistor and a light-emitting device with an MML structure. With this structure, leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices can be extremely low. With the above structure, when an image is displayed on the display device, a viewer can observe one or more of image sharpness, image sharpness, high saturation, and high contrast ratio. Note that with a structure in which leakage current that may flow through the transistor and lateral leakage current between the light-emitting devices are extremely low, light leakage that may occur during black display (so-called black floating) can be minimized.

[0486] In particular, a light emitting device having an MML structure can greatly reduce the current flowing between adjacent light emitting devices.

[0487] [Transistor 209, Transistor 210] 20B and 20C are cross-sectional views illustrating other examples of the cross-sectional structure of a transistor that can be used in the display device 100H.

[0488] The transistor 209 and the transistor 210 each include a conductive layer 221, an insulating layer 211, a semiconductor layer 231, a conductive layer 222a, a conductive layer 222b, an insulating layer 225, a conductive layer 223, and an insulating layer 215. The semiconductor layer 231 includes a channel formation region 231i and a pair of low-resistance regions 231n. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The conductive layer 221 functions as a gate, and the insulating layer 211 functions as a first gate insulating layer. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. The conductive layer 223 functions as a gate, and the insulating layer 225 functions as a second gate insulating layer. The conductive layer 222a is electrically connected to one of the pair of low-resistance regions 231n, and the conductive layer 222b is electrically connected to the other of the pair of low-resistance regions 231n. An insulating layer 215 covers the conductive layer 223. An insulating layer 218 further covers the transistor.

[0489] [Configuration example 1 of insulating layer 225] In the transistor 209, the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231 (see FIG. 20B). The insulating layer 225 and the insulating layer 215 have openings, and the conductive layers 222a and 222b are electrically connected to the low-resistance region 231n through the openings. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0490] [Configuration example 2 of insulating layer 225] In the transistor 210, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n (see FIG. 20C). For example, the insulating layer 225 can be processed into a predetermined shape by using the conductive layer 223 as a mask. The insulating layer 215 covers the insulating layer 225 and the conductive layer 223. The insulating layer 215 has an opening, and the conductive layer 222a and the conductive layer 222b are each electrically connected to the low-resistance region 231n.

[0491] [Connection 204] The connection portion 204 is provided on the substrate 14b. The connection portion 204 includes a conductive layer 166, and the conductive layer 166 is electrically connected to the wiring 165. The connection portion 204 does not overlap the substrate 16b, and the conductive layer 166 is exposed. The conductive layer 166 and the conductive layer 171 can be formed by processing one conductive film. The conductive layer 166 is electrically connected to the FPC 177 via a connection layer 242. For example, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used for the connection layer 242.

[0492] 《Display device 100I》 21 is a cross-sectional view illustrating the configuration of the display device 100I. The display device 100I differs from the display device 100H in that it is flexible. In other words, the display device 100I is a flexible display. The display device 100I has a substrate 17 instead of the substrate 14b, and has a substrate 18 instead of the substrate 16b. Both the substrate 17 and the substrate 18 are flexible.

[0493] The display device 100I includes an adhesive layer 156 and an insulating layer 162. The adhesive layer 156 bonds the insulating layer 162 to the substrate 17. For example, a material that can be used for the adhesive layer 122 can be used for the adhesive layer 156. For example, a material that can be used for the insulating layer 211, the insulating layer 213, or the insulating layer 215 can be used for the insulating layer 162. Note that the transistor 201 and the transistor 205 are provided over the insulating layer 162.

[0494] For example, an insulating layer 162 is formed on the fabrication substrate, and each transistor, light-emitting device, and the like are formed on the insulating layer 162. Then, for example, an adhesive layer 142 is formed on the light-emitting device, and the fabrication substrate and the substrate 18 are bonded together using the adhesive layer 142. Then, the fabrication substrate is separated from the insulating layer 162 to expose the surface of the insulating layer 162. Then, an adhesive layer 156 is formed on the exposed surface of the insulating layer 162, and the insulating layer 162 and the substrate 17 are bonded together using the adhesive layer 156. Thereby, each component formed on the fabrication substrate can be transferred onto the substrate 17 to fabricate the display device 100I.

[0495] 《Display device 100J》 22 is a cross-sectional view illustrating the configuration of a display device 100J. The display device 100J differs from the display device 100H in that, instead of the configuration in which the EL layers 172W between adjacent light-emitting devices 63W are separated from each other, the EL layers 172 are continuous between adjacent light-emitting devices 63W.

[0496] Display device 100J includes layers 183R, 183G, and 183B between substrate 16b and substrate 14b. Layer 183R overlaps one light-emitting device 63W, layer 183G overlaps another light-emitting device 63W, and layer 183B overlaps yet another light-emitting device 63W.

[0497] The display device 100J has a light-shielding layer 117. For example, the light-shielding layer 117 is provided between the layer 183R and the layer 183G, between the layer 183G and the layer 183B, and between the layer 183B and the layer 183R. The light-shielding layer 117 also has a region overlapping with the connection portion 140 and a region overlapping with the circuit 164.

[0498] The light emitting device 63W can emit, for example, blue light. For example, the layer 183R converts the light emitted by the light emitting device 63W into red light and transmits it, the layer 183G converts the light emitted by the light emitting device 63W into green light and transmits it, and the layer 183B can transmit the blue light contained in the light emitted by the light emitting device 63W. As a result, the display device 100J can emit, for example, red light 83R, green light 83G, and blue light 83B to perform full-color display.

[0499] 《Display device 100K》 23 is a cross-sectional view for explaining the configuration of the display device 100K. The display device 100K is different from the display device 100H in that it is a bottom emission type. The light emitting device emits light toward the substrate 14b side, and the display device 100K emits light 83R, light 83G, and light 83B from the substrate 14b side. A material that transmits visible light is used for the conductive layer 171. Also, a material that reflects visible light is used for the conductive layer 173.

[0500] 《Display device 100L》 24 is a cross-sectional view for explaining the configuration of the display device 100L. The display device 100L differs from the display device 100H in that it is flexible and is a bottom emission type. The display device 100L has a substrate 17 instead of the substrate 14b, and has a substrate 18 instead of the substrate 16b. Both the substrate 17 and the substrate 18 are flexible. The light-emitting device emits light toward the substrate 17, and the display device 100L emits light 83R, light 83G, and light 83B from the substrate 17 side.

[0501] The conductive layer 221 and the conductive layer 223 may be transparent to visible light or reflective to visible light. When the conductive layer 221 and the conductive layer 223 are transparent to visible light, the transmittance of visible light in the display portion 107 can be increased. On the other hand, when the conductive layer 221 and the conductive layer 223 are reflective to visible light, the amount of visible light incident on the semiconductor layer 231 can be reduced. Furthermore, damage to the semiconductor layer 231 can be reduced. This can improve the reliability of the display device 100K or the display device 100L.

[0502] Note that even in a top-emission display device such as the display device 100H or the display device 100I, at least a part of the layer constituting the transistor 205 may be configured to transmit visible light. In this case, the conductive layer 171 also has a visible light-transmitting property. In this manner, the transmittance of visible light in the display portion 107 can be increased.

[0503] 《Display device 100M》 25 is a cross-sectional view illustrating the configuration of a display device 100M. The display device 100M differs from the display device 100H in that, instead of a configuration in which the EL layers 172W between adjacent light-emitting devices 63W are separated from each other, the EL layers 172W between adjacent light-emitting devices 63W are continuous and that the display device 100M is a bottom emission type.

[0504] The display device 100M includes a layer 183R, a layer 183G, and a layer 183B. The display device 100M also includes a light-shielding layer 117.

[0505] [Light blocking layer 117] The light-shielding layer 117 is provided on the substrate 14b, and is located between the substrate 14b and the transistor 205. Note that the insulating layer 153 is located between the light-shielding layer 117 and the transistor 205. For example, the light-shielding layer 117 does not overlap the light-emitting region of the light-emitting device 63W. For example, the light-shielding layer 117 overlaps the connection portion 140 and the circuit 164.

[0506] The light-shielding layer 117 can also be provided in the display device 100K or the display device 100L. In this case, it is possible to suppress the light emitted by the light-emitting device 63W from being reflected by, for example, the substrate 14b and diffusing inside the display device 100K or the display device 100L. This allows the display device 100K and the display device 100L to be display devices with high display quality.

[0507] 《Display device 100N》 FIG. 26 shows an example of a cross section of the display device 100N, where a portion of the area including the FPC 177, a portion of the circuit 164, a portion of the display unit 107, a portion of the connection unit 140, and a portion of the area including the end portion are cut away.

[0508] A display device 100N shown in FIG. 26 includes a transistor 205D, a transistor 205R, a transistor 205G, a transistor 205B, a light emitting device 61W, and the like between a substrate 14b and a substrate 16b.

[0509] The transistors 205D, 205R, 205G, and 205B are all formed on the substrate 14b. These transistors can be manufactured using the same material and in the same process.

[0510] Specifically, the transistor 205D, the transistor 205R, the transistor 205G, and the transistor 205B each have a conductive layer 221 functioning as a gate, an insulating layer 213 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 321, and an insulating layer 211 (insulating layers 211a, 211b, and 211c). Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 222a and the conductive layer 222b. The insulating layer 213 is located between the conductive layer 221 and the semiconductor layer 321.

[0511] The transistors included in the circuit 164 and the transistors included in the display portion 107 may have the same structure or different structures. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 107 may all have the same structure or may have two or more types.

[0512] All the transistors in the display portion 107 may be OS transistors, all the transistors in the display portion 107 may be Si transistors, or some of the transistors in the display portion 107 may be OS transistors and the rest may be Si transistors.

[0513] For example, by using both an LTPS transistor and an OS transistor in the display unit 107, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. A more preferable example is a configuration in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0514] For example, one of the transistors in the display unit 107 functions as a transistor for controlling a current flowing through a light-emitting device, and can be called a driving transistor. One of the source and the drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This can increase the current flowing through the light-emitting device in the pixel circuit.

[0515] On the other hand, the other one of the transistors included in the display unit 107 functions as a switch for controlling selection / non-selection of a pixel and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This makes it possible to maintain the gradation of a pixel even if the frame frequency is significantly reduced (for example, 1 fps or less), and therefore, by stopping the driver when displaying a still image, power consumption can be reduced.

[0516] An insulating layer 218 is provided to cover the transistors 205D, 205R, 205G, and 205B, and an insulating layer 214 is provided on the insulating layer 218.

[0517] The insulating layer 218 preferably functions as a protective layer for the transistor. The insulating layer 218 is preferably made of a material through which impurities such as water and hydrogen are unlikely to diffuse. This allows the insulating layer 218 to function as a barrier film. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.

[0518] The insulating layer 218 preferably has one or more inorganic insulating films. Examples of the inorganic insulating film include an insulating oxide film, an insulating nitride film, an insulating oxynitride film, and an insulating nitride oxide film. Specific examples of these inorganic insulating films are as described above.

[0519] The insulating layer 214 preferably functions as a planarizing layer, and is preferably an organic insulating film. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent a recess from being formed in the insulating layer 214 when the conductive layers 171R, 171G, 171B, etc. are processed. Alternatively, a recess may be provided in the insulating layer 214 when the conductive layers 171R, 171G, 171B, etc. are processed.

[0520] On the insulating layer 214, a light emitting device 61W is provided.

[0521] Furthermore, the substrate 16b has layers 183R, 183G, and 183B on the surface facing the substrate 14b.

[0522] One light-emitting device 61W has a conductive layer 171R, an EL layer 172 on the conductive layer 171R, and a conductive layer 173 on the EL layer 172. The layer 183R also has a layer CFR1, which contains a color conversion material. Thus, light emitted from the light-emitting device 61W is extracted as red light to the outside of the display device 100N through the layer 183R.

[0523] Another light-emitting device 61W has a conductive layer 171G, an EL layer 172 on the conductive layer 171G, and a conductive layer 173 on the EL layer 172. In addition, a layer 183G includes a layer CFG1, which includes a color conversion material. As a result, light emitted from the light-emitting device 61W is extracted as green light to the outside of the display device 100N through the layer 183G.

[0524] Another light-emitting device 61W has a conductive layer 171B, an EL layer 172 on the conductive layer 171B, and a conductive layer 173 on the EL layer 172. A layer 183B contains a coloring material and functions as a color filter. As a result, light emitted from the light-emitting device 61W is extracted as blue light to the outside of the display device 100N through the layer 183B.

[0525] The light-emitting devices 61W share the EL layer 172 and the conductive layer 173. The configuration in which the EL layer 172 is common to the subpixels of each color can reduce the number of manufacturing steps compared to the configuration in which a different EL layer is provided for each subpixel of each color.

[0526] The conductive layer 171R is electrically connected to the conductive layer 222b included in the transistor 205R through openings provided in the insulating layers 213, 218, and 214. Similarly, the conductive layer 171G is electrically connected to the conductive layer 222b included in the transistor 205G, and the conductive layer 171B is electrically connected to the conductive layer 222b included in the transistor 205B.

[0527] Each end of the conductive layers 171R, 171G, and 171B is covered with an insulating layer 272. The insulating layer 272 functions as a partition (also referred to as a bank or spacer). The insulating layer 272 can be provided in a single layer structure or a multilayer structure using one or both of an inorganic insulating material and an organic insulating material. For example, the material that can be used for the insulating layer 218 and the material that can be used for the insulating layer 214 can be used for the insulating layer 272. The insulating layer 272 can electrically insulate the pixel electrode and the common electrode. In addition, the insulating layer 272 can electrically insulate adjacent light-emitting devices from each other.

[0528] The conductive layer 173 is a continuous film provided in common to the plurality of light-emitting devices 61W. The conductive layer 173 shared by the plurality of light-emitting devices 61W is electrically connected to the conductive layer 168 provided in the connection portion 140. For the conductive layer 168, it is preferable to use a conductive layer formed of the same material and in the same process as the conductive layers 171R, 171G, and 171B.

[0529] A protective layer 273 is provided on the plurality of light emitting devices 61W. The protective layer 273 and the substrate 16b are bonded via an adhesive layer 142. The substrate 16b is provided with a light shielding layer 117. For example, a solid sealing structure or a hollow sealing structure can be applied to seal the light emitting devices. In FIG. 26, the space between the substrate 16b and the substrate 14b is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light emitting devices. The space may also be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0530] The protective layer 273 is provided at least on the display unit 107, and is preferably provided so as to cover the entire display unit 107. The protective layer 273 is preferably provided so as to cover not only the display unit 107, but also the connection unit 140 and the circuit 164. The protective layer 273 is preferably provided up to the end of the display device 100N. On the other hand, in the connection unit 204, in order to electrically connect the FPC 177 and the conductive layer 166, there are portions where the protective layer 273 is not provided.

[0531] By providing a protective layer 273 on the light emitting device 61W, the reliability of the light emitting device can be improved.

[0532] The protective layer 273 may have a single-layer structure or a stacked structure of two or more layers. In addition, there is no restriction on the conductivity of the protective layer 273. The protective layer 273 can be formed of at least one of an insulating film, a semiconductor film, and a conductive film.

[0533] The protective layer 273 having an inorganic film can prevent oxidation of the conductive layer 173, suppress impurities (such as moisture and oxygen) from entering the light-emitting device, and so on, thereby suppressing deterioration of the light-emitting device and improving the reliability of the display device.

[0534] For the protective layer 273, for example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used. Specific examples of these inorganic insulating films are as described above. In particular, the protective layer 273 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0535] The protective layer 273 may be an inorganic film containing ITO, In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, IGZO, or the like. The inorganic film preferably has a high resistance, and more specifically, preferably has a higher resistance than the conductive layer 173. The inorganic film may further contain nitrogen.

[0536] When light emitted from the light emitting device is extracted through the protective layer 273, it is preferable that the protective layer 273 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials each having high transparency to visible light.

[0537] For example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 273. By using such a laminated structure, it is possible to prevent impurities (water, oxygen, etc.) from entering the EL layer side.

[0538] Furthermore, the protective layer 273 may have an organic film. For example, the protective layer 273 may have both an organic film and an inorganic film. Examples of the organic film that can be used for the protective layer 273 include the organic insulating film that can be used for the insulating layer 214.

[0539] A connection portion 204 is provided in an area of ​​the substrate 14b where the substrate 16b does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 177 via the conductive layer 166 and the connection layer 242. The conductive layer 166 is an example of a single-layer structure of a conductive layer obtained by processing the same conductive film as the conductive layers 171R, 171G, and 171B. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 177 to be electrically connected via the connection layer 242.

[0540] The display device 100N is a top emission type. Light emitted by the light emitting device is emitted to the substrate 16b side. The substrate 16b is preferably made of a material that is highly transparent to visible light. The conductive layers 171R, 171G, and 171B include a material that reflects visible light, and the conductive layer 173 includes a material that transmits visible light.

[0541] The surface of the substrate 16b facing the substrate 14b is preferably provided with a light-shielding layer 117. The light-shielding layer 117 can be provided between adjacent light-emitting devices, in the connection parts 140, in the circuits 164, and the like.

[0542] Various optical members can be disposed on the outer side of the substrate 16b (the surface opposite to the substrate 14b). Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, a surface protection layer such as an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, and an impact absorbing layer may be disposed on the outer side of the substrate 16b. For example, the surface protection layer may be a glass layer or a silica layer (SiO x The provision of a surface protection layer is preferable because it can suppress the occurrence of surface contamination and scratches. In addition, DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based materials, or polycarbonate-based materials may be used. Note that it is preferable to use a material having high transmittance for visible light for the surface protection layer. It is also preferable to use a material having high hardness for the surface protection layer.

[0543] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0544] This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0545] (Embodiment 11) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0546] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has high reliability and can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0547] Examples of electronic devices include electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.

[0548] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, and glasses-type AR and MR devices.

[0549] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280×720 pixels), FHD (1920×1080 pixels), WQHD (2560×1440 pixels), WQXGA (2560×1600 pixels), 4K (3840×2160 pixels), or 8K (7680×4320 pixels). In particular, a resolution of 4K, 8K, or more is preferable. In addition, the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either or both of high resolution and high definition, it is possible to further improve the sense of realism and depth in electronic devices for personal use such as portable or home use. In addition, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0550] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0551] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, or a function of reading out a program or data recorded on a recording medium.

[0552] An example of a wearable device that can be worn on the head will be described with reference to Figures 27(A) to 27(D). These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the user's sense of immersion.

[0553] The electronic device 6700A shown in FIG. 27(A) and the electronic device 6700B shown in FIG. 27(B) each have a pair of display panels 6751, a pair of housings 6721, a communication unit (not shown), a pair of mounting units 6723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 6753, a frame 6757, and a pair of nose pads 6758.

[0554] The display device of one embodiment of the present invention can be applied to the display panel 6751. Therefore, the electronic device can be a highly reliable electronic device.

[0555] The electronic device 6700A and the electronic device 6700B can each project an image displayed on the display panel 6751 onto a display area 6756 of an optical member 6753. Since the optical member 6753 has translucency, a user can see an image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 6753. Therefore, the electronic device 6700A and the electronic device 6700B are each electronic devices capable of AR display.

[0556] The electronic device 6700A and the electronic device 6700B may be provided with a camera capable of capturing an image of the front as an imaging unit. In addition, the electronic device 6700A and the electronic device 6700B may each include an acceleration sensor such as a gyro sensor, thereby detecting the direction of the user's head and displaying an image according to the direction in the display region 6756.

[0557] The communication unit has a wireless communication device and can supply, for example, a video signal through the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0558] In addition, the electronic device 6700A and the electronic device 6700B are provided with batteries, which can be charged wirelessly and / or wired.

[0559] The housing 6721 may be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 6721 is touched. The touch sensor module detects a tap operation, a slide operation, or the like by the user, and can execute various processes. For example, a tap operation can execute a process such as pausing or resuming a video, and a slide operation can execute a process such as fast forwarding or rewinding. Furthermore, by providing a touch sensor module in each of the two housings 6721, the range of operations can be expanded.

[0560] As the touch sensor module, various touch sensors can be applied. For example, various types of sensors can be adopted, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to apply a capacitance type or an optical type sensor to the touch sensor module.

[0561] When an optical touch sensor is used, a photoelectric conversion element (also called a photoelectric conversion device) can be used as the light receiving element. The active layer of the photoelectric conversion element can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0562] The electronic device 6800A shown in FIG. 27(C) and the electronic device 6800B shown in FIG. 27(D) each have a pair of display units 6820, a housing 6821, a communication unit 6822, a pair of mounting units 6823, a control unit 6824, a pair of imaging units 6825, and a pair of lenses 6832.

[0563] The display device of one embodiment of the present invention can be applied to the display portion 6820. Thus, the electronic device can be highly reliable.

[0564] The display portion 6820 is provided inside the housing 6821 at a position where it can be viewed through the lens 6832. In addition, by displaying different images on the pair of display portions 6820, a three-dimensional display using parallax can be performed.

[0565] The electronic device 6800A and the electronic device 6800B can each be said to be electronic devices for VR. A user wearing the electronic device 6800A or the electronic device 6800B can view an image displayed on the display unit 6820 through the lens 6832.

[0566] The electronic device 6800A and the electronic device 6800B each preferably have a mechanism for adjusting the left-right positions of the lens 6832 and the display unit 6820 so that the lens 6832 and the display unit 6820 are optimally positioned according to the position of the user's eyes. Also, each preferably has a mechanism for adjusting the focus by changing the distance between the lens 6832 and the display unit 6820.

[0567] The mounting unit 6823 allows the user to mount the electronic device 6800A or the electronic device 6800B on the head. Note that, for example, in Fig. 27(C), the mounting unit 6823 has a shape similar to that of a pair of glasses (also called a joint or temple, etc.), but is not limited thereto. The mounting unit 6823 may have a helmet-type or band-type shape as long as it can be worn by the user.

[0568] The imaging unit 6825 has a function of acquiring external information. Data acquired by the imaging unit 6825 can be output to the display unit 6820. An image sensor can be used for the imaging unit 6825. A plurality of cameras may be provided so as to support a plurality of angles of view, such as a telephoto and wide angle.

[0569] Note that, although an example having the imaging unit 6825 is shown here, a distance measuring sensor (also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 6825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling a more accurate gesture operation.

[0570] The electronic device 6800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having the vibration mechanism can be applied to one or more of the display unit 6820, the housing 6821, and the wearing unit 6823. This makes it possible to enjoy video and audio by simply wearing the electronic device 6800A without requiring a separate audio device such as headphones, earphones, or speakers.

[0571] The electronic device 6800A and the electronic device 6800B may each have an input terminal. The input terminal can be connected to a cable for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0572] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 6750. The earphone 6750 has a communication unit (not shown) and has a wireless communication function. The earphone 6750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 6700A shown in FIG. 27A has a function of transmitting information to the earphone 6750 through the wireless communication function. For example, the electronic device 6800A shown in FIG. 27C has a function of transmitting information to the earphone 6750 through the wireless communication function.

[0573] 27B includes an earphone unit 6727. For example, the earphone unit 6727 and a control unit can be connected to each other by wire. Part of the wiring connecting the earphone unit 6727 and the control unit may be disposed inside the housing 6721 or the mounting unit 6723.

[0574] 27D includes an earphone unit 6827. For example, the earphone unit 6827 and the control unit 6824 can be configured to be connected to each other by wire. A part of the wiring connecting the earphone unit 6827 and the control unit 6824 may be disposed inside the housing 6821 or the mounting unit 6823. The earphone unit 6827 and the mounting unit 6823 may include a magnet. This allows the earphone unit 6827 to be fixed to the mounting unit 6823 by magnetic force, which is preferable because it makes it easy to store the earphone unit 6827.

[0575] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may have one or both of an audio input terminal and an audio input mechanism. For example, a sound collector such as a microphone can be used as the audio input mechanism. The electronic device may have a function as a so-called headset by having the audio input mechanism.

[0576] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic device 6700A and the electronic device 6700B) and goggles-type devices (such as the electronic device 6800A and the electronic device 6800B) are preferable.

[0577] Furthermore, the electronic device according to one embodiment of the present invention can transmit information to the earphones in a wired or wireless manner.

[0578] An electronic device 6500 shown in FIG. 28A is a portable information terminal that can be used as a smartphone.

[0579] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0580] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.

[0581] FIG. 28B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0582] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0583] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0584] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back area. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0585] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. In addition, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0586] 28C shows an example of a television set. In a television set 7100, a display portion 7000 is incorporated in a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0587] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0588] 28C can be operated using an operation switch provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using an operation key or a touch panel provided on the remote control 7111, a channel and a volume can be operated, and an image displayed on the display portion 7000 can be controlled.

[0589] The television device 7100 includes a receiver, a modem, and the like. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0590] 28D shows an example of a laptop personal computer. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. A display portion 7000 is incorporated in the housing 7211.

[0591] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0592] 28(E) and 28(F) show an example of digital signage.

[0593] 28E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0594] 28(F) shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pole 7401.

[0595] 28E and 28F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be made highly reliable.

[0596] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it catches people's attention, which can increase the advertising effect of, for example, advertisements.

[0597] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used for providing information such as route information or traffic information, usability can be improved by intuitive operation.

[0598] 28(E) and 28(F), the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0599] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). This allows an unspecified number of users to participate in and enjoy the game at the same time.

[0600] The electronic devices shown in Figures 29(A) to 29(G) have a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), and a microphone 9008, etc.

[0601] 29(A) to 29(G) have various functions. For example, the electronic devices may have a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of controlling processing by various software (programs), a wireless communication function, or a function of reading and processing a program or data recorded on a recording medium. Note that the functions of the electronic devices are not limited to these, and the electronic devices may have various functions. The electronic devices may have multiple display units. In addition, the electronic devices may have a function of providing a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function of displaying the captured images on the display unit, etc.

[0602] The electronic devices shown in FIGS. 29A to 29G will be described in detail below.

[0603] FIG. 29A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9101 can display text and image information on a plurality of surfaces. FIG. 29A shows an example in which three icons 9050 are displayed. Information 9051 shown in a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notification of incoming e-mail, SNS, phone call, etc., the title of the e-mail or SNS, the sender's name, the date and time, the time, the remaining battery level, and radio wave intensity. Alternatively, for example, an icon 9050 may be displayed at the position where the information 9051 is displayed.

[0604] 29(B) is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of a display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed at a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and determine, for example, whether to answer a call.

[0605] 29(C) is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone, e-mail, text browsing and creation, music playback, Internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0606] 29(D) is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0607] 29(E) to 29(G) are perspective views showing a foldable mobile information terminal 9201. FIG. 29(E) is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 29(G) is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 29(F) is a perspective view of a state in the middle of changing from one of FIG. 29(E) and FIG. 29(G) to the other. The mobile information terminal 9201 has excellent portability in a folded state, and has excellent viewability of the display due to a seamless wide display area in an unfolded state. A display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0608] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate. [Explanation of symbols]

[0609] ANO Conductive Film BLUE Light CFA layer CFB layer CFC layer CFD layer CS capacity ELA Light ELB Light ELC Hikari ELD Light ELX Hikari ELY Hikari GREEN Light hv light INT conductive film NA Node SA Conductive Film SB Conductive Film SC Conductive Film SD Conductive Film RED light YELLOW Light 14b Substrate 16b Board 17 Substrate 18 Substrate 37b Display section 61W Light Emitting Device 63W Light Emitting Device 71 Substrate 73 Substrate 83B light 83G Optical 83R light 100A display device 100C display device 100D display device 100E display device 100F display device 100G display device 100H display device 100I display device 100J display device 100K display device 100L display device 100M display device 100N display device 100 display device 103S Unit 103X Unit 103Y Unit 104S layer 104X layer 104XY area 104Y layer 105S layer 105X layer 105Y layer 106X middle layer 107 Display section 111X layer 112S layer 112X layer 113S layer 113X layer 114N layer 114P layer 114S layer 117 Light blocking layer 120 Substrate 122 Adhesive layer 140 Connection 142 Adhesive layer 153 Insulating Layer 156 Adhesive layer 162 Insulating Layer 164 circuits 165 Wiring 166 Conductive Layer 168 Conductive Layer 171B Conductive layer 171G conductive layer 171R conductive layer 171 Conductive Layer 172W EL layer 172 EL layer 173 Conductive Layer 176 IC 177 FPC 183B layer 183G layer 183R layer 201 Transistor 204 Connection 205B Transistor 205D Transistor 205G Transistor 205R Transistor 205 Transistor 209 Transistor 210 Transistor 211a Insulating layer 211b Insulating layer 211c Insulating layer 211 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 218 Insulating Layer 221 Conductive Layer 222a conductive layer 222b Conductive layer 223 Conductive Layer 225 Insulating Layer 231i Channel formation region 231n Low resistance region 231 Semiconductor Layer 240 capacity 241 Conductive Layer 242 Connection Layer 243 Insulating Layer 245 Conductive Layer 251 Conductive Layer 252 Conductive layer 254 Insulating layer 255a Insulating layer 255b Insulating layer 255c Insulation Layer 255 Insulation Layer 256 Plug 261 Insulating Layer 262 Insulating Layer 263 Insulating Layer 264 Insulating Layer 265 Insulating Layer 270 Sacrificial Layer 271 Protective layer 272 Insulating Layer 273 Protective layer 274a conductive layer 274b Conductive layer 274 Plug 275 Plug 278 Insulating Layer 280 Display Module 290 FPC 301A Board 301B Board 301 Substrate 310A Transistor 310B Transistor 310 Transistor 311 Conductive layer 312 Low resistance region 313 Insulating Layer 314 Insulating layer 315 Element isolation layer 320A Transistor 320B Transistor 320 Transistor 321 Semiconductor Layer 323 Insulating Layer 324 Conductive Layer 325 Conductive Layer 326 Insulating Layer 327 Conductive Layer 328 Insulating Layer 329 Insulating Layer 331 Substrate 332 Insulating layer 335 Insulating Layer 336 Insulating Layer 341 Conductive Layer 342 Conductive Layer 343 Plug 344 Insulating Layer 345 Insulation Layer 346 Insulating Layer 347 Bump 348 Adhesive layer 510 Substrate 520 Functional Layer 521 Insulating film 528 Insulating film 529_1 Membrane 529_2 Membrane 529_3 Membrane 529_3X opening 529_3Y opening 530A Pixel circuit 530B Pixel circuit 530C Pixel circuit 530D Pixel circuit 550A Light Emitting Device 550B Light Emitting Device 550C Light Emitting Device 550D Light Emitting Device 550S Photoelectric conversion device 550X Light Emitting Device 550Y Light Emitting Device 551S electrode 551X electrode 551XS Gap 551XY gap 551Y electrode 552S electrode 552X electrode 552Y electrode 700 Display device 702A Pixel 702B pixels 702C pixels 702D pixels 703 pixels 6500 Electronic equipment 6501 Case 6502 Display section 6503 Power button 6504 Button 6505 Speaker 6506 Microphone 6507 Camera 6508 Light source 6510 Protective materials 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed Circuit Board 6518 Battery 6700A Electronic equipment 6700B Electronic equipment 6721 Case 6723 Mounting part 6727 Earphones 6750 Earphones 6751 Display Panel 6753 Optical components 6756 Display area 6757 Frame 6758 Nose pad 6800A electronic equipment 6800B Electronic equipment 6820 Display section 6821 Case 6822 Communications Department 6823 Mounting part 6824 Control section 6825 Imaging unit 6827 Earphones 6832 Lens 7000 Display 7100 Television equipment 7101 Case 7103 Stand 7111 Remote control device 7200 Notebook Personal Computer 7211 Case 7212 Keyboard 7213 Pointing Device 7214 External connection port 7300 Digital Signage 7301 Case 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 Pillar 7411 Information terminal 9000 Chassis 9001 Display section 9002 Camera 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Portable information terminal 9102 Portable information terminal 9103 Tablet PC 9200 Mobile Information Terminal 9201 Portable information terminals

Claims

1. Having a set of pixels, The aforementioned set of pixels comprises a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel has a first light-emitting device and a first layer, The first light-emitting device described above overlaps with the first layer described above. The first light-emitting device emits first light toward the first layer, The emission spectrum of the first light has intensity in the wavelength range of blue light and in the wavelength range of green light. The first layer has the function of absorbing the first light, The first layer includes a color conversion material that converts blue light and green light into red light. The second pixel comprises a second light-emitting device and a second layer. The second light-emitting device overlaps with the second layer, The second light-emitting device emits a second light toward the second layer, The emission spectrum of the second light has intensity in the wavelength range of blue light and the wavelength range of green light. The second layer described above has the function of transmitting blue light, The third pixel comprises a third light-emitting device and a third layer. The third light-emitting device overlaps with the third layer, The third light-emitting device emits a third light toward the third layer, The emission spectrum of the third light has intensity in the wavelength range of blue light and in the wavelength range of green light. The third layer has the function of absorbing blue light and transmitting green light. The fourth pixel has a fourth light-emitting device and a fourth layer, The fourth light-emitting device overlaps with the fourth layer, The comparative 4 light-emitting device emits a fourth light toward the comparative 4 layer, The fourth light emission spectrum has intensity in the wavelength range of blue light and the wavelength range of green light, in the display device.

2. In Claim 1, The third layer is a color-converting material that converts blue light into green light, and is used in the display device.

3. In Claim 2, The fourth layer is a display device that transmits the fourth light.

4. In claim 2, The fourth layer transmits and absorbs the fourth light, The fourth layer is a display device having the function of converting absorbed light into red light.

5. The display device according to claim 2, wherein the fourth layer includes a color conversion material that converts blue light and green light into red light.

6. In Claim 2, The fourth layer is a color-converting material that converts green light into red light, and is used in the display device.

7. In claim 2, The fourth layer includes a color conversion material that converts blue light to red light and a color conversion material that converts green light to red light, in a display device.

8. Having a set of pixels, The aforementioned set of pixels comprises a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel has a first light-emitting device and a first layer, The first light-emitting device described above overlaps with the first layer described above. The first light-emitting device emits first light toward the first layer, The emission spectrum of the first light has intensity in the wavelength range of blue light, The first layer has the function of absorbing the first light, The first layer includes a color conversion material that converts blue light into red light. The second pixel comprises a second light-emitting device and a second layer. The second light-emitting device overlaps with the second layer, The second light-emitting device emits a second light toward the second layer, The emission spectrum of the second light has intensity in the wavelength range of blue light, The second layer described above has the function of transmitting blue light, The third pixel comprises a third light-emitting device and a third layer. The third light-emitting device overlaps with the third layer, The third light-emitting device emits a third light toward the third layer, The emission spectrum of the third light has intensity in the wavelength range of blue light, The third layer described above has the function of absorbing blue light, The third layer includes a color conversion material that converts blue light into green light. The fourth pixel has a fourth light-emitting device and a fourth layer, The fourth light-emitting device overlaps with the fourth layer, The comparative 4 light-emitting device emits a fourth light toward the comparative 4 layer, The emission spectrum of the fourth light has intensity in the wavelength range of blue light, The fourth layer transmits and absorbs the fourth light, The fourth layer is a display device having the function of converting blue light into yellow light.

9. In claim 8, The fourth layer is a display device containing a color conversion material that converts blue light into yellow light.

10. In claim 9, The fourth layer includes a color conversion material that converts blue light to green light and a color conversion material that converts blue light to red light, in a display device.

11. A display device according to any one of claims 1 to 10, A display module having at least one of a connector and an integrated circuit.

12. A display device according to any one of claims 1 to 10, An electronic device having at least one of a battery, a camera, a speaker, and a microphone.

Images