Reflective mask blank, reflective mask, reflective mask blank manufacturing method, and reflective mask manufacturing method
JP2024024684A5Pending Publication Date: 2026-07-01AGC INC
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- AGC INC
- Filing Date
- 2023-12-27
- Publication Date
- 2026-07-01
AI Technical Summary
Technical Problem
The etching rate of phase shift films made from Ir-based materials is slow, and the etching selectivity between the phase shift film and the protective film is low, leading to a risk of etching the multilayer reflective film during pattern formation.
Method used
A reflective mask blank design that includes a phase shift film made of an Ir-based material and a protective film made of an Rh-based material, enhancing the etching selectivity between the two layers.
Benefits of technology
Improves the etching selectivity between the phase shift film and the protective film, allowing for precise pattern formation without etching the multilayer reflective film.
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Smart Images
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Abstract
To provide a technique that improves the etching selectivity ratio between a phase shift film and a protective film when the phase shift film contains Ir as the main component.SOLUTION: A reflective mask blank comprises, in the stated order, a substrate, a multi-layered reflective film that reflects EUV light, a protective film that protects the multi-layered reflective film, and a phase shift film that shifts the phase of the EUV light. The phase shift film is formed from an Ir-based material mainly containing Ir. The protective film is formed from a Rh-based material mainly containing Rh.SELECTED DRAWING: Figure 1
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