Semiconductor device

JP2024075661A5Active Publication Date: 2025-02-07SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2024042023
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2009-11-28
Filing Date
2024-03-18
Publication Date
2025-02-07
Estimated Expiration
2030-11-25

AI Technical Summary

Technical Problem

Existing oxide semiconductors, such as InGaO3(ZnO)m, do not achieve sufficient characteristics when used in semiconductor devices, particularly in terms of electrical performance and reliability.

Method used

A semiconductor device is manufactured using a highly purified oxide semiconductor layer with a crystalline region, comprising a first and second oxide semiconductor layer with crystalline regions, and a specific crystal orientation, to enhance electrical properties and suppress impurity intrusion.

Benefits of technology

The use of highly purified and crystalline oxide semiconductor layers improves electrical characteristics, reduces threshold voltage fluctuations, and enhances reliability and field-effect mobility, making the semiconductor device suitable for various applications including display panels and switching elements.

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Abstract

To provide a semiconductor device which has a novel structure using an oxide semiconductor layer of a novel structure.SOLUTION: A semiconductor device has: a first oxide semiconductor layer which is formed on a substrate having an insulating surface and has a crystalline region grown from the surface toward the inside of the first semiconductor layer; a second oxide semiconductor layer on the first oxide semiconductor layer; a source electrode layer and a drain electrode layer, which contact the second oxide semiconductor layer; a gate insulation layer which covers the second oxide semiconductor layer, the source electrode layer and the drain electrode layer; and a gate electrode layer on the gate insulation layer in a region which overlaps the second oxide semiconductor layer, in which the second oxide semiconductor layer is a layer having crystal grown from the crystalline region.SELECTED DRAWING: Figure 1
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