Manufacturing method for organic semiconductor element

Abstract

To provide a manufacturing method for an organic semiconductor element, in which a predetermined region on a substrate can be exposed while covering an organic semiconductor element with a barrier layer.SOLUTION: A manufacturing method for an organic semiconductor element 1 includes the steps of: forming a first terminal 8 on a main surface 2a of a substrate 2; forming a first electrode 3 on the main surface 2a; forming an organic semiconductor layer 5 on the first electrode 3; forming a second electrode 7 on the organic semiconductor layer 5; forming a sacrifice layer 14 in a predetermined region on the main surface 2a; forming a barrier layer 13 on the main surface 2a by an atomic layer deposition (ALD) method so as to cover the first terminal 8, a second terminal 11, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrifice layer 14; and removing the sacrifice layer 14 and a part of the barrier layer 13 that covers the sacrifice layer 14. Before the step of forming the barrier layer 13, the organic semiconductor layer 5 and the sacrifice layer 14 are apart from each other.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a method for producing an organic semiconductor device. [Background technology]

[0002] There is known a method for manufacturing an organic semiconductor element, which includes the steps of forming electrodes and terminals on a substrate, integrally forming an organic semiconductor layer and a sacrificial layer such that the organic semiconductor layer is located on the electrodes and the sacrificial layer is located on the terminals, forming a barrier layer by an ALD (Atomic Layer Deposition) method so as to cover the organic semiconductor layer and the sacrificial layer, and removing the sacrificial layer and portions of the barrier layer that correspond to the terminals by irradiation with laser light (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-79740 A Summary of the Invention [Problem to be solved by the invention]

[0004] According to the above-mentioned method for manufacturing an organic semiconductor element, the terminals formed on the substrate can be exposed. However, since the organic semiconductor layer and the sacrificial layer are integrally formed during the irradiation of the laser light, there is a risk that the portion of the organic semiconductor layer along the sacrificial layer may be damaged or exposed.

[0005] An object of the present invention is to provide a method for manufacturing an organic semiconductor element, which can expose a predetermined area on a substrate while covering an organic semiconductor layer with a barrier layer. [Means for solving the problem]

[0006] The method for producing an organic semiconductor element of the present invention includes the steps of: [1] "a first step of preparing a substrate having a main surface; a second step of forming a first terminal on the main surface at least after the first step; a third step of forming a first electrode on the main surface, the first terminal being electrically connected to the first terminal; a fourth step of forming an organic semiconductor layer on the first electrode at least after the third step; a fifth step of forming a second electrode on the organic semiconductor layer at least after the fourth step; and a fifth step of forming a sacrificial layer made of the same organic material as the organic semiconductor layer on the main surface at least after the first step." a sixth step of forming a barrier layer on a predetermined region on the main surface by an ALD method after the second step, the fifth step, and the sixth step, so as to cover the first terminal, the first electrode, the second electrode, the organic semiconductor layer, and the sacrificial layer, and an eighth step of removing the sacrificial layer and a portion of the barrier layer covering the sacrificial layer after the seventh step, wherein the organic semiconductor layer and the sacrificial layer are separated from each other after the second step, the fifth step, and the sixth step and before the seventh step.

[0007] In the method for producing an organic semiconductor element described in [1] above, the sacrificial layer and the portion of the barrier layer covering the sacrificial layer are removed while the organic semiconductor layer and the sacrificial layer are separated from each other. This makes it possible to expose a predetermined region on the main surface of the substrate while preventing the organic semiconductor layer from being damaged or exposed. Therefore, according to the method for producing an organic semiconductor element described in [1] above, it is possible to expose a predetermined region on the substrate while covering the organic semiconductor layer with the barrier layer.

[0008] The method for producing an organic semiconductor element of the present invention may be [2] "the method for producing an organic semiconductor element according to [1], further comprising a ninth step of forming a second terminal on the main surface at least after the first step and before the sixth step, the sixth step being carried out at least after the second step and the ninth step, and in the sixth step, the predetermined region on the main surface includes a region on the first terminal and a region on the second terminal." According to the method for producing an organic semiconductor element according to [2], the first terminal and the second terminal can be exposed while covering the organic semiconductor layer with a barrier layer.

[0009] The method for producing an organic semiconductor element of the present invention may be [3] "the method for producing an organic semiconductor element according to [1] or [2], in which the fourth step and the sixth step are carried out simultaneously." According to the method for producing an organic semiconductor element according to [3], the formation of the organic semiconductor layer and the formation of the sacrificial layer are carried out simultaneously, so that the organic semiconductor element can be produced efficiently.

[0010] The method for producing an organic semiconductor element of the present invention may be [4] "the method for producing an organic semiconductor element according to [3], in which the organic semiconductor layer and the sacrificial layer are formed by a printing method under the same conditions in the fourth step and the sixth step." According to the method for producing an organic semiconductor element according to [4], an organic semiconductor element can be produced more efficiently.

[0011] The method for producing an organic semiconductor element of the present invention may be [5] "the method for producing an organic semiconductor element according to [1] or [2], in which the fourth step and the sixth step are carried out separately." According to the method for producing an organic semiconductor element according to [5], the organic semiconductor layer and the sacrificial layer can be formed in a suitable manner.

[0012] The method for producing an organic semiconductor element of the present invention may be [6] "the method for producing an organic semiconductor element according to [5], in which in the fourth step, the organic semiconductor layer is formed by a printing method under a first condition, and in the sixth step, the sacrificial layer is formed by a printing method under a second condition different from the first condition." According to the method for producing an organic semiconductor element according to [6], the organic semiconductor layer and the sacrificial layer can be formed in a manner suitable for each of them.

[0013] The method for producing an organic semiconductor element of the present invention may be [7] "the method for producing an organic semiconductor element according to any one of [1] to [6], further comprising a tenth step of forming a first functional layer on the first electrode after the third step and before the fourth step, and an eleventh step of forming a second functional layer on the organic semiconductor layer after the fourth step and before the fifth step, wherein the organic semiconductor layer is formed on the first functional layer in the fourth step, and the second electrode is formed on the second functional layer in the fifth step." According to [7], the function of the organic semiconductor element can be effectively exhibited.

[0014] The method for producing an organic semiconductor element of the present invention may be [8] "the method for producing an organic semiconductor element according to any one of [1] to [7], in which in the eighth step, the sacrificial layer and the portion of the barrier layer are removed by a solvent." According to the method for producing an organic semiconductor element according to [8], the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be efficiently removed.

[0015] The method for producing an organic semiconductor element of the present invention may be [9] "the method for producing an organic semiconductor element according to any one of [1] to [8], wherein in the seventh step, a plurality of first layers made of a first material and a plurality of second layers made of a second material different from the first material are alternately laminated one by one to form the barrier layer." According to the method for producing an organic semiconductor element according to [9], the organic semiconductor layer can be reliably sealed by the barrier layer.

[0016] The method for producing an organic semiconductor element of the present invention may be

[10] "the method for producing an organic semiconductor element according to any one of [1] to [9], in which the thickness of the sacrificial layer is greater than the thickness of the organic semiconductor layer after the second step, the fifth step, and the sixth step, and before the seventh step." According to the method for producing an organic semiconductor element according to

[10] , the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed.

[0017] The method for producing an organic semiconductor device of the present invention may be

[11] "the method for producing an organic semiconductor device according to any one of [1] to

[10] , wherein in the sixth step, the sacrificial layer is formed so that the ratio of the length of the sacrificial layer to the thickness of the sacrificial layer is 100 or more and 10000 or less." According to the method for producing an organic semiconductor device according to

[11] , the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed.

[0018] The method for producing an organic semiconductor element of the present invention may be

[12] "the method for producing an organic semiconductor element according to any one of [1] to

[11] , wherein after the seventh step, the thickness of the sacrificial layer is 10 times or more the thickness of the barrier layer." According to the method for producing an organic semiconductor element according to

[12] , the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed.

[0019] The method for producing an organic semiconductor element of the present invention may be

[13] "the method for producing an organic semiconductor element according to any one of [1] to

[12] , wherein the thickness of the sacrificial layer is equal to or greater than the thickness of the first electrode after the third step and the sixth step." According to the method for producing an organic semiconductor element according to

[13] , the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed.

[0020] The method for producing an organic semiconductor element of the present invention may be

[14] "the method for producing an organic semiconductor element according to any one of [1] to

[13] , wherein after the fifth step and the sixth step, the thickness of the sacrificial layer is equal to or greater than the thickness of the second electrode." According to the method for producing an organic semiconductor element according to

[14] , the sacrificial layer and the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed.

[0021] The method for producing an organic semiconductor device of the present invention may be

[15] "the method for producing an organic semiconductor device according to any one of [1] to

[14] , wherein in the seventh step, the barrier layer is formed so that the thickness of the barrier layer is 1 / 10 or less of the sum of the thickness of the first electrode, the thickness of the organic semiconductor layer, and the thickness of the second electrode." According to the method for producing an organic semiconductor device according to

[15] , the portion of the barrier layer covering the sacrificial layer can be easily and reliably removed. Effect of the Invention

[0022] According to the present invention, it is possible to provide a manufacturing method for an organic semiconductor element that can expose a predetermined region on a substrate while covering an organic semiconductor layer with a barrier layer. [Brief description of the drawings]

[0023] [Figure 1] 1 is a plan view of an organic semiconductor element manufactured by a manufacturing method for an organic semiconductor element according to one embodiment. [Diagram 2] 2 is a cross-sectional view of the organic semiconductor element taken along line II-II shown in FIG. [Diagram 3] 2 is a cross-sectional view of the organic semiconductor element taken along line III-III shown in FIG. [Figure 4] 1 is a flowchart of a method for manufacturing an organic semiconductor element according to one embodiment. [Diagram 5] 5 is a plan view of an intermediate in the method for producing the organic semiconductor element shown in FIG. 4. [Figure 6] 5A and 5B are a plan view and a cross-sectional view of an intermediate in the method for producing the organic semiconductor element shown in FIG. [Figure 7] 13 is a flowchart of a manufacturing method of an organic semiconductor element according to a first modified example. [Figure 8] 8 is a plan view of an intermediate in the method for producing the organic semiconductor element shown in FIG. 7. [Figure 9] 13 is a flowchart of a method for manufacturing an organic semiconductor element according to a second modified example. [Figure 10] 10 is a plan view of an intermediate in the method for manufacturing the organic semiconductor element shown in FIG. [Figure 11] FIG. 13 is a plan view of an organic semiconductor element manufactured by a manufacturing method for an organic semiconductor element according to a third modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals, and duplicated explanations will be omitted.

[0025] 1, 2, and 3, an organic semiconductor device 1 includes a substrate 2, a first electrode 3, a first functional layer 4, an organic semiconductor layer 5, a second functional layer 6, a second electrode 7, a first terminal 8, a first wiring 9, a second terminal 11, a second wiring 12, and a barrier layer 13. Hereinafter, the thickness direction of the substrate 2 is referred to as the Z-axis direction, a direction perpendicular to the Z-axis direction is referred to as the X-axis direction, and a direction perpendicular to both the Z-axis direction and the X-axis direction is referred to as the Y-axis direction.

[0026] The substrate 2 has a main surface 2a and a main surface 2b opposite to the main surface 2a. The substrate 2 is formed, for example, in a rectangular plate shape. The substrate 2 is, for example, a glass substrate or a resin film. The thickness of the substrate 2 is, for example, 10 μm or more and several mm or less.

[0027] The first electrode 3 is disposed on the main surface 2a of the substrate 2. In this embodiment, the first electrode 3 is in contact with the main surface 2a of the substrate 2. The first electrode 3 is formed, for example, in a rectangular film shape. When viewed from the Z-axis direction, the first electrode 3 is located, for example, at approximately the center of the main surface 2a. The thickness of the first electrode 3 is, for example, 10 nm or more and 5000 nm or less. In this case, the thickness of the first electrode 3 may be 10 nm or more and 1000 nm or less, or 50 nm or more and 300 nm or less. The material of the first electrode 3 is, for example, ITO, AZO, or FTO.

[0028] The first functional layer 4 is disposed on the first electrode 3. In this embodiment, the first functional layer 4 has an outer edge portion disposed on the main surface 2a of the substrate 2 and a main body portion (a portion inside the outer edge portion) disposed on the first electrode 3. The outer edge portion of the first functional layer 4 is in contact with the main surface 2a of the substrate 2, and the main body portion of the first functional layer 4 is in contact with the first electrode 3. The first functional layer 4 is composed of at least one layer selected from the group consisting of a work function adjustment layer, a charge injection layer, a charge transport layer, a getter layer, and a spacer layer. That is, the first functional layer 4 may have a single-layer structure or a multi-layer structure. The first functional layer 4 is formed, for example, in a rectangular layer shape. The thickness of the layers constituting the first functional layer 4 is, for example, 1 nm or more and 200 nm or less.

[0029] The organic semiconductor layer 5 is disposed on the first functional layer 4. In this embodiment, the organic semiconductor layer 5 has an outer edge portion disposed on the main surface 2a of the substrate 2 and a main body portion (a portion inside the outer edge portion) disposed on the first functional layer 4. The outer edge portion of the organic semiconductor layer 5 is in contact with the main surface 2a of the substrate 2, and is disposed so as to surround the entire circumference of the first electrode 3 when viewed from, for example, the Z-axis direction. The main body portion of the organic semiconductor layer 5 is in contact with the first functional layer 4. The organic semiconductor layer 5 is formed, for example, in a rectangular layer shape. Alternatively, the organic semiconductor layer 5 may be formed in a circular film shape. The circular shape includes a perfect circle, an oval, or an ellipse. The thickness of the organic semiconductor layer 5 is, for example, 50 nm or more and 5000 nm or less. In that case, the thickness of the organic semiconductor layer 5 may be 50 nm or more and 1000 nm or less, or may be 50 nm or more and 500 nm or less. The organic semiconductor layer 5 is formed of an organic material. In this embodiment, the organic semiconductor layer 5 contains a p-type organic semiconductor and an n-type organic semiconductor as organic materials.

[0030] Examples of the p-type organic semiconductor contained in the organic semiconductor layer 5 include compounds (e.g., polymers) having a skeleton derived from at least one compound selected from the group consisting of thiophene, benzothiophene, phenylenevinylene, carbazole, thienopyrrole, diketopyrrolopyrrole, and derivatives thereof. The p-type organic semiconductor contained in the organic semiconductor layer 5 can be one or a combination of a plurality of the above compounds.

[0031] The n-type organic semiconductor contained in the organic semiconductor layer 5 may be, for example, at least one compound selected from the group consisting of fullerene, fullerene derivatives, carbon nanotubes, and carbon nanotube derivatives. The fullerene derivative may, for example, be PC 61 BM, etc. The n-type organic semiconductor contained in the organic semiconductor layer 5 may be one or a combination of two or more of the above compounds.

[0032] The second functional layer 6 is disposed on the organic semiconductor layer 5. In this embodiment, the second functional layer 6 is in contact with the organic semiconductor layer 5. The second functional layer 6 is composed of at least one layer selected from the group consisting of a work function adjustment layer, a charge injection layer, a charge transport layer, a getter layer, and a spacer layer, similar to the first functional layer 4. That is, the second functional layer 6 may have a single-layer structure or a multi-layer structure. The second functional layer 6 is formed, for example, in a rectangular layer shape. The thickness of the layers constituting the second functional layer 6 is, for example, 1 nm or more and 200 nm or less.

[0033] The second electrode 7 is disposed on the second functional layer 6. In this embodiment, the second electrode 7 is in contact with the second functional layer 6. The second electrode 7 is formed, for example, in a rectangular film shape. The thickness of the second electrode 7 is, for example, 10 nm or more and 5000 nm or less. In this case, the thickness of the second electrode 7 may be 10 nm or more and 1000 nm or less, or 50 nm or more and 300 nm or less. The material of the second electrode 7 is, for example, Pt, Au, Ag, Al, or Cu.

[0034] The first terminal 8 is disposed on the main surface 2a of the substrate 2. In this embodiment, the first terminal 8 is in contact with the main surface 2a of the substrate 2. As an example, the first terminal 8 is located on one side in the X-axis direction and one side in the Y-axis direction with respect to the first electrode 3. The first terminal 8 is formed, for example, in the shape of a rectangular film.

[0035] The first wiring 9 is disposed on the main surface 2a of the substrate 2. In this embodiment, the first wiring 9 is in contact with the main surface 2a of the substrate 2. One end 9a of the first wiring 9 is connected to the first terminal 8. The other end 9b of the first wiring 9 is connected to the first electrode 3. As a result, the first electrode 3 and the first terminal 8 are electrically connected via the first wiring 9. In this embodiment, the first terminal 8 and the first wiring 9 are formed integrally with the first electrode 3 by the same material as the first electrode 3. The thickness of the first terminal 8 and the first wiring 9 is, for example, approximately equal to the thickness of the first electrode 3.

[0036] The second terminal 11 is disposed on the main surface 2a of the substrate 2. In this embodiment, the second terminal 11 is in contact with the main surface 2a of the substrate 2. As an example, the second terminal 11 is located on the other side in the X-axis direction and on one side in the Y-axis direction with respect to the first electrode 3. The second terminal 11 is formed, for example, in the shape of a rectangular film.

[0037] The second wiring 12 is disposed on the principal surface 2a of the substrate 2. In this embodiment, the second wiring 12 is in contact with the principal surface 2a of the substrate 2. The second wiring 12 includes a first portion 121 and a second portion 122. One end 121a of the first portion 121 is connected to the second terminal 11. In this embodiment, the second terminal 11 and the first portion 121 are integrally formed with each other by the same material as the first electrode 3. The thickness of the second terminal 11 and the first portion 121 is, for example, approximately equal to the thickness of the first electrode 3. One end 122a of the second portion 122 runs from the principal surface 2a of the substrate 2 onto the other end 121b of the first portion 121 and is connected to the other end 121b of the first portion 121. The other end 122b of the second portion 122 is connected to the second electrode 7 from the principal surface 2a of the substrate 2 via the side surface (outer edge portion) of the organic semiconductor layer 5. As a result, the second electrode 7 and the second terminal 11 are electrically connected via the second wiring 12. In this embodiment, the second portion 122 is formed integrally with the second electrode 7 using the same material as the second electrode 7. The thickness of the second portion 122 is, for example, approximately equal to the thickness of the second electrode 7.

[0038] The barrier layer 13 is disposed on the main surface 2a of the substrate 2 so as to cover the first electrode 3, the first functional layer 4, the organic semiconductor layer 5, the second functional layer 6, the second electrode 7, the first wiring 9, and the second wiring 12. The barrier layer 13 is also disposed on the main surface 2b of the substrate 2. In this embodiment, the barrier layer 13 covers the main surfaces 2a and 2b of the substrate 2, the first electrode 3, the first functional layer 4, the organic semiconductor layer 5, the second functional layer 6, the second electrode 7, the first wiring 9, and the second wiring 12, with the first terminal 8 and the second terminal 11 exposed. The barrier layer 13 has a first opening 13a and a second opening 13b. The first terminal 8 is exposed to the outside through the first opening 13a. The second terminal 11 is exposed to the outside through the second opening 13b. In this embodiment, the thickness of the barrier layer 13 is 1 / 10 or less of the total thickness of the first electrode 3, the organic semiconductor layer 5, and the second electrode 7. The thickness of the barrier layer 13 is, for example, 5 nm or more and 100 nm or less. In this case, the thickness of the barrier layer 13 may be 5 nm or more and 70 nm or less, or 5 nm or more and 40 nm or less. The barrier layer 13 is formed by an ALD (Atomic Layer Deposition) method. In this embodiment, the barrier layer 13 is formed by alternately stacking a plurality of first layers made of a first material and a plurality of second layers made of a second material different from the first material. The materials of the first layers and the second layers are, for example, TiO2, Al2O3, HfO2, ZnO, SnO2, In2O3, TiN, Si3N4, Pt, or Ag.

[0039] A method for manufacturing the organic semiconductor device 1 described above (a method for manufacturing the organic semiconductor device 1) will be described with reference to the flow chart shown in FIG. 4. First, the substrate 2 is prepared (step S01). The substrate 2 prepared in step S01 is subjected to a cleaning process. Examples of the cleaning process performed on the substrate 2 include wet cleaning using an organic solvent or pure water, and dry cleaning using plasma or ultraviolet light. The cleaning process performed on the substrate 2 is not limited to the above-mentioned cleaning processes, and may be any cleaning process that does not damage the substrate 2. When the substrate 2 is a resin substrate, low-temperature baking at a temperature of, for example, 100 degrees or less may be performed after the wet cleaning. Step S01 corresponds to the first process.

[0040] 5(a), the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed (step S02). Specifically, the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed on the main surface 2a of the substrate 2. That is, in step S02, the steps of forming the first electrode 3 on the main surface 2a, forming the first terminal 8 on the main surface 2a, forming the first wiring 9 on the main surface 2a, forming the second terminal 11 on the main surface 2a, and forming the first portion 121 of the second wiring 12 on the main surface 2a are performed. The first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed by the material of the first electrode 3. The first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed so that their respective thicknesses are approximately equal to that of the first electrode 3. The first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed simultaneously (i.e., in the same process). The first electrode 3, the first terminal 8, and the first wiring 9 are formed integrally. The second terminal 11 and the first portion 121 of the second wiring 12 are formed integrally. In step S02, the process of forming the first terminal 8 on the main surface 2a corresponds to the second process, the process of forming the second terminal 11 on the main surface 2a corresponds to the ninth process, and the process of forming the first electrode 3 on the main surface 2a corresponds to the third process.

[0041] Next, as shown in (b) of Fig. 5, the first functional layer 4 is formed (step S03). Specifically, the first functional layer 4 is formed on the first electrode 3. At this time, of the first functional layer 4, a main body portion is formed on the first electrode 3, and an outer edge portion is formed on the main surface 2a. In step S03, a process of forming the first functional layer 4 on the first electrode 3 is carried out. Step S03 corresponds to the tenth process.

[0042] Subsequently, as shown in FIG. 5(c), the organic semiconductor layer 5 and the sacrificial layer 14 are formed (step S04). Specifically, the organic semiconductor layer 5 is formed on the first functional layer 4, and the sacrificial layer 14 is formed in a predetermined region on the main surface 2a. At this time, the main body portion of the organic semiconductor layer 5 is formed on the first functional layer 4, and the outer edge portion is formed on the main surface 2a. As described above, since the first functional layer 4 is formed on the first electrode 3, it can also be said that the organic semiconductor layer 5 is formed on the first electrode 3. That is, in step S04, a process of forming the organic semiconductor layer 5 on the first electrode 3 and a process of forming the sacrificial layer 14 in a predetermined region on the main surface 2a are performed. Furthermore, in the process of forming the organic semiconductor layer 5 on the first electrode 3, the organic semiconductor layer 5 is formed on the first functional layer 4. The organic semiconductor layer 5 and the predetermined region on the main surface 2a where the sacrificial layer 14 is formed are separated from each other. That is, in step S04, the organic semiconductor layer 5 and the sacrificial layer 14 are formed apart from each other. In this embodiment, the organic semiconductor layer 5 and the sacrificial layer 14 are formed apart from each other even when viewed from the Z-axis direction (i.e., the direction perpendicular to the main surface 2a).

[0043] In this embodiment, the predetermined region on the main surface 2a where the sacrificial layer 14 is formed includes the region on the first terminal 8 and the region on the second terminal 11. Specifically, the predetermined region on the main surface 2a where the sacrificial layer 14 is formed includes the entire region on the first terminal 8, the entire region on the second terminal 11, a partial region of the main surface 2a located around the first terminal 8, and a partial region on the main surface 2a located around the second terminal 11. Therefore, in this embodiment, the sacrificial layer 14 is formed on the first terminal 8, the second terminal 11, and the main surface 2a. Alternatively, the predetermined region on the main surface 2a where the sacrificial layer 14 is formed may include only the region on the first terminal 8 and the region on the second terminal. In this case, the region on the first terminal 8 included in the predetermined region may be the entire region or only a part of the region. The region on the second terminal 11 included in the predetermined region may be the entire region or only a part of the region.

[0044] In this embodiment, the sacrificial layer 14 is formed of the material of the organic semiconductor layer 5. That is, in step S04, the sacrificial layer 14 made of the same material as the organic semiconductor layer 5 is formed. As described above, the organic semiconductor layer 5 is formed of an organic semiconductor material including a p-type organic semiconductor and an n-type organic semiconductor. Therefore, the sacrificial layer 14 is also formed of an organic semiconductor material including a p-type organic semiconductor and an n-type organic semiconductor. Alternatively, the sacrificial layer 14 may be formed of a material different from the material of the organic semiconductor layer 5. That is, in step S04, the sacrificial layer 14 made of a material different from the organic semiconductor layer 5 may be formed. The thickness of the sacrificial layer 14 is, for example, 100 nm or more and 10,000 nm or less. In that case, the thickness of the sacrificial layer 14 may be 500 nm or more and 10,000 nm or less.

[0045] In step S04, the sacrificial layer 14 is formed so that the thickness of the sacrificial layer 14 is equal to or greater than the thickness of the first electrode 3. The sacrificial layer 14 is formed so that the thickness of the sacrificial layer 14 is equal to or greater than the thickness of the second electrode 7. In addition, in step S04, the sacrificial layer 14 is formed so that the ratio of the length of the sacrificial layer 14 to the thickness of the sacrificial layer 14 is equal to or greater than 100 and equal to or less than 10,000. Here, the length of the sacrificial layer 14 includes at least one of the length of the sacrificial layer 14 in the X-axis direction and the length of the sacrificial layer 14 in the Y-axis direction. Therefore, in step S04, the sacrificial layer 14 may be formed so that the ratio of the length of the sacrificial layer 14 in the X-axis direction to the thickness of the sacrificial layer 14 is equal to or greater than 100 and equal to or less than 10,000, and the sacrificial layer 14 may be formed so that the ratio of the length of the sacrificial layer 14 in the Y-axis direction to the thickness of the sacrificial layer 14 is equal to or greater than 100 and equal to or less than 10,000. Alternatively, the sacrificial layer 14 may be formed so that the ratio of the length of the sacrificial layer 14 in the X-axis direction to the thickness of the sacrificial layer 14 and the ratio of the length of the sacrificial layer 14 in the Y-axis direction to the thickness of the sacrificial layer 14 are 100 or more and 10,000 or less.

[0046] In this embodiment, the organic semiconductor layer 5 and the sacrificial layer 14 are formed at the same time (i.e., in the same process). Therefore, in step S04, the process of forming the organic semiconductor layer 5 on the first electrode 3 and the process of forming the sacrificial layer 14 in a predetermined region on the main surface 2a are performed simultaneously. The method of forming the organic semiconductor layer 5 and the sacrificial layer 14 is, for example, a printing method, a spin coating method, or a vapor deposition method. The printing method of forming the organic semiconductor layer 5 and the sacrificial layer 14 is, for example, a dispenser method, an inkjet method, or a screen printing method. When the sacrificial layer 14 is formed to have the above-mentioned thickness and the organic semiconductor layer 5 and the sacrificial layer 14 are formed apart from each other, it is preferable to adopt the dispenser method or the inkjet method as the printing method. Therefore, in this embodiment, the organic semiconductor layer 5 and the sacrificial layer 14 are formed by the dispenser method or the inkjet method. In this embodiment, the organic semiconductor layer 5 and the sacrificial layer 14 are formed by a printing method under the same conditions. In step S04, the step of forming the organic semiconductor layer 5 on the first electrode 3 corresponds to the fourth step, and the step of forming the sacrificial layer 14 in a predetermined region on the main surface 2a corresponds to the sixth step.

[0047] 5(d), the second functional layer 6, the second electrode 7, and the second portion 122 of the second wiring 12 are formed (step S05). Specifically, the second functional layer 6 is formed on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6, and the second portion 122 of the second wiring 12 is formed on the main surface 2a. As described above, since the second functional layer 6 is formed on the organic semiconductor layer 5, it can also be said that the second electrode 7 is formed on the organic semiconductor layer 5. In addition, the other end 122b of the second portion 122 formed on the main surface 2a is connected to the second electrode 7 from the main surface 2a via the side surface (outer edge portion) of the organic semiconductor layer 5. That is, the second electrode 7 and the second wiring 12 are connected via the side surface of the organic semiconductor layer 5. In step S05, a process of forming the second functional layer 6 on the organic semiconductor layer 5, a process of forming the second electrode 7 on the organic semiconductor layer 5, and a process of forming the second portion 122 of the second wiring 12 on the main surface 2a are performed. Furthermore, in the process of forming the second electrode 7 on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6. In step S05, a process of forming the second functional layer 6 on the organic semiconductor layer 5, a process of forming the second electrode 7 on the organic semiconductor layer 5, and a process of forming the second portion 122 of the second wiring 12 on the main surface 2a are performed consecutively. The second portion 122 of the second wiring 12 is formed by the material of the second electrode 7. The second portion 122 of the second wiring 12 is formed so that its thickness is approximately equal to the thickness of the second electrode 7. The second electrode 7 and the second portion 122 of the second wiring 12 are formed integrally at the same time. In step S05, the process of forming the second functional layer 6 on the organic semiconductor layer 5 corresponds to the eleventh process, and the process of forming the second electrode 7 on the organic semiconductor layer 5 corresponds to the fifth process.

[0048] After step S05 and before step S06, the thickness of the sacrificial layer 14 is equal to or greater than the thickness of the first electrode 3 and equal to or greater than the thickness of the second electrode 7. Moreover, after step S05 and before step S06, the thickness of the sacrificial layer 14 is greater than the thickness of the organic semiconductor layer 5. Furthermore, as described above, in step S04, the organic semiconductor layer 5 and the predetermined region on the main surface 2a where the sacrificial layer 14 is formed are separated from each other. Therefore, after steps S04 and S05 and before step S06, the organic semiconductor layer 5 and the sacrificial layer 14 are separated from each other.

[0049] 6(a), the barrier layer 13 is formed (step S06). Specifically, the barrier layer 13 is formed on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14. Furthermore, the barrier layer 13 is also formed on the main surface 2b by the ALD method. That is, in step S06, a process of forming the barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14, and a process of forming the barrier layer 13 on the main surface 2b by the ALD method are performed. In step S06, a process of forming the barrier layer 13 on the main surface 2a by the ALD method and a process of forming the barrier layer 13 on the main surface 2b by the ALD method are performed simultaneously. In step S06, the barrier layer 13 is formed on the main surface 2a so as to cover the first terminal 8, the first wiring 9, the second terminal 11, the second wiring 12, the first electrode 3, the second electrode 7, the first functional layer 4, the second functional layer 6, the organic semiconductor layer 5, and the sacrificial layer 14, and is also formed on the main surface 2b. The thickness of the barrier layer 13 is, for example, 5 nm or more and 100 nm or less. In this case, the thickness of the barrier layer 13 may be 5 nm or more and 70 nm or less, or 5 nm or more and 40 nm or less. In step S06, the barrier layer 13 is formed so that the thickness of the barrier layer 13 is 1 / 10 or less of the total thickness of the first electrode 3, the organic semiconductor layer 5, and the second electrode 7.

[0050] As described above, the barrier layer 13 is formed by the ALD method. In this embodiment, the barrier layer 13 is formed by alternately stacking a plurality of first layers made of the first material and a plurality of second layers made of the second material. In step S06, the step of forming the barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14 corresponds to the seventh step. After step S06, the thickness of the sacrificial layer 14 is 10 times or more the thickness of the barrier layer 13.

[0051] Subsequently, the sacrificial layer 14 and the barrier layer 13 are removed (step S07). Specifically, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed. That is, in step S07, a process of removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 is performed. In this embodiment, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed by a solvent. Specifically, the portion of the barrier layer 13 covering the sacrificial layer 14 is wiped with a brush, a rag, or the like containing a solvent that dissolves the sacrificial layer 14 and the barrier layer 13, and the portion is removed together with the sacrificial layer 14. As a result, the portion of the barrier layer 13 covering the sacrificial layer 14 is removed together with the sacrificial layer 14, and an opening that exposes a predetermined region is formed in the barrier layer 13. As described above, in this embodiment, the predetermined region on the main surface 2a includes the region on the first terminal 8 and the region on the second terminal 11, so that the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed to form the first opening 13a and the second opening 13b in the barrier layer 13, exposing the first terminal 8 and the second terminal 11. As a result, the first terminal 8 is exposed to the outside through the first opening 13a, and the second terminal 11 is exposed to the outside through the second opening 13b. Step S07 corresponds to the eighth step.

[0052] As described above, in the manufacturing method of the organic semiconductor device 1, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed while the organic semiconductor layer 5 and the sacrificial layer 14 are separated from each other. This makes it possible to expose a predetermined region on the main surface 2a of the substrate 2 while suppressing damage or exposure of the organic semiconductor layer 5. Therefore, according to the manufacturing method of the organic semiconductor device 1, it is possible to expose a predetermined region on the substrate 2 while covering the organic semiconductor layer 5 with the barrier layer 13.

[0053] In the manufacturing method of the organic semiconductor element 1, the specified area on the main surface 2a includes an area on the first terminal 8 and an area on the second terminal 11, so that the organic semiconductor layer 5 can be covered by the barrier layer 13 while exposing the first terminal 8 and the second terminal 11.

[0054] In the method for producing the organic semiconductor device 1, the organic semiconductor layer 5 and the sacrificial layer 14 are formed simultaneously, so that the organic semiconductor device 1 can be produced efficiently.

[0055] In the method for producing the organic semiconductor device 1, the organic semiconductor layer 5 and the sacrificial layer 14 are formed under the same conditions, so that the organic semiconductor device 1 can be produced more efficiently.

[0056] In the manufacturing method of the organic semiconductor element 1, the first functional layer 4 is formed on the first electrode 3, and the second functional layer 6 is formed on the organic semiconductor layer 5, so that the function of the organic semiconductor element 1 can be effectively performed.

[0057] In the manufacturing method of the organic semiconductor element 1, the sacrificial layer 14 and the part of the barrier layer 13 covering the sacrificial layer 14 are removed by a solvent, so that the sacrificial layer 14 and the part of the barrier layer 13 covering the sacrificial layer 14 can be efficiently removed. When the sacrificial layer 14 and the part of the barrier layer 13 covering the sacrificial layer 14 are removed by irradiating a laser beam, it is necessary to adopt a material that does not absorb the laser beam when selecting the material of the substrate 2 and the material of the barrier layer 13. On the other hand, when the sacrificial layer 14 and the part of the barrier layer 13 covering the sacrificial layer 14 are removed by a solvent, it is not necessary to consider the above-mentioned optical characteristics when selecting the material of the substrate 2 and the material of the barrier layer 13. Therefore, according to the manufacturing method of the organic semiconductor element 1, it is possible to increase the degree of freedom in forming the substrate 2 and the barrier layer 13, such as the selection of a suitable material.

[0058] In the method for manufacturing the organic semiconductor device 1, a plurality of first layers made of a first material and a plurality of second layers made of a second material different from the first material are alternately laminated one by one to form the barrier layer 13. In this case, for example, cracks generated in the barrier layer 13 during the manufacturing process of the organic semiconductor device 1 are unlikely to connect between the layers. Therefore, according to the method for manufacturing the organic semiconductor device 1, the organic semiconductor layer 5 can be reliably sealed by the barrier layer 13.

[0059] In the manufacturing method of the organic semiconductor device 1, the thickness of the sacrificial layer 14 is greater than the thickness of the organic semiconductor layer 5, and therefore, when removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14, the portion of the barrier layer 13 covering the sacrificial layer 14 is likely to be damaged. Therefore, according to the manufacturing method of the organic semiconductor device 1, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 can be easily and reliably removed.

[0060] In the manufacturing method of the organic semiconductor device 1, the sacrificial layer 14 is formed so that the ratio of the length of the sacrificial layer 14 to the thickness of the sacrificial layer 14 is equal to or greater than 100 and equal to or less than 10,000. In this case, when removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14, defects are likely to occur in the portion of the barrier layer 13 covering the sacrificial layer 14. Therefore, according to the manufacturing method of the organic semiconductor device 1, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 can be easily and reliably removed.

[0061] In the manufacturing method of the organic semiconductor device 1, the thickness of the sacrificial layer 14 is ten times or more the thickness of the barrier layer 13, and therefore, when removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14, the portion of the barrier layer 13 covering the sacrificial layer 14 is likely to be damaged. Therefore, according to the manufacturing method of the organic semiconductor device 1, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 can be easily and reliably removed.

[0062] In the manufacturing method of the organic semiconductor element 1, the thickness of the sacrificial layer 14 is equal to or greater than the thickness of the first electrode 3, so that the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 can be easily and reliably removed.

[0063] In the manufacturing method of the organic semiconductor element 1, the thickness of the sacrificial layer 14 is equal to or greater than the thickness of the second electrode 7, so that the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 can be easily and reliably removed.

[0064] In the manufacturing method of the organic semiconductor element 1, the barrier layer 13 is formed so that the thickness of the barrier layer 13 is 1 / 10 or less of the sum of the thickness of the first electrode 3, the thickness of the organic semiconductor layer 5, and the thickness of the second electrode 7, so that the portion of the barrier layer 13 that covers the sacrificial layer 14 can be easily and reliably removed.

[0065] A method for manufacturing the organic semiconductor element 1 according to the first modified example will be described with reference to the flowchart of Fig. 7. The first modified example differs from the above-described embodiment in the order of forming the organic semiconductor layer 5 and the sacrificial layer 14. The following mainly describes the differences between the above-described embodiment and the first modified example.

[0066] First, a substrate 2 having a main surface 2a is prepared (step S21). Step S21 corresponds to a first process.

[0067] 8(a), the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed (step S22). In step S22, the steps of forming the first electrode 3 on the main surface 2a, forming the first terminal 8 on the main surface 2a, forming the first wiring 9 on the main surface 2a, forming the second terminal 11 on the main surface 2a, and forming the first portion 121 of the second wiring 12 on the main surface 2a are performed. In step S22, the step of forming the first terminal 8 on the main surface 2a corresponds to the second step, the step of forming the second terminal 11 on the main surface 2a corresponds to the ninth step, and the step of forming the first electrode 3 on the main surface 2a corresponds to the third step.

[0068] 8(b), the first functional layer 4 is formed (step S23). Specifically, the first functional layer 4 is formed on the first electrode 3. That is, in step S23, a process of forming the first functional layer 4 on the first electrode 3 is carried out. Step S23 corresponds to the tenth process.

[0069] 8(c), a sacrificial layer 14 is formed (step S24). Specifically, the sacrificial layer 14 is formed in a predetermined region on the main surface 2a, and the predetermined region includes a region on the first terminal 8 and a region on the second terminal 11. That is, in step S24, the sacrificial layer 14 is formed on the first terminal 8 and the second terminal 11. Step S24 corresponds to the sixth process.

[0070] 8(d), the organic semiconductor layer 5 is formed (step S25). Specifically, the organic semiconductor layer 5 is formed on the first functional layer 4. As described above, in the first modified example, the first functional layer 4 is also formed on the first electrode 3, so it can be said that the organic semiconductor layer 5 is formed on the first electrode 3. Step S25 corresponds to the fourth process.

[0071] In the first modified example, as described above, the step of forming the organic semiconductor layer 5 and the step of forming the sacrificial layer 14 are performed separately. Specifically, step S25 is performed after step S24 is performed. Therefore, in the first modified example, the organic semiconductor layer 5 is formed on the first functional layer 4 after the sacrificial layer 14 is formed in a predetermined region on the main surface 2a.

[0072] In the first modified example, the organic semiconductor layer 5 and the sacrificial layer 14 are formed by a printing method, where the organic semiconductor layer 5 is formed by a printing method under first conditions, and the sacrificial layer 14 is formed by a printing method under second conditions different from the first conditions. That is, the organic semiconductor layer 5 and the sacrificial layer 14 are formed by printing methods under different conditions.

[0073] 8(e), the second functional layer 6, the second electrode 7, and the second portion 122 of the second wiring 12 are formed (step S26). Specifically, the second functional layer 6 is formed on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6, and the second portion 122 of the second wiring 12 is formed on the main surface 2a. As described above, in the first modified example, the second functional layer 6 is formed on the organic semiconductor layer 5, so it can be said that the second electrode 7 is formed on the organic semiconductor layer 5. That is, in step S25, a process of forming the second functional layer 6 on the organic semiconductor layer 5, a process of forming the second electrode 7 on the organic semiconductor layer 5, and a process of forming the second portion 122 of the second wiring 12 on the main surface 2a are performed. Furthermore, in the process of forming the second electrode 7 on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6. In step S26, the process of forming the second functional layer 6 on the organic semiconductor layer 5 corresponds to the eleventh process, and the process of forming the second electrode 7 on the organic semiconductor layer 5 corresponds to the fifth process.

[0074] Subsequently, the barrier layer 13 is formed (step S27). Specifically, the barrier layer 13 is formed on the main surface 2a by the ALD method so as to cover the first terminal 8, the first wiring 9, the second terminal 11, the second wiring 12, the first electrode 3, the second electrode 7, the first functional layer 4, the second functional layer 6, the organic semiconductor layer 5, and the sacrificial layer 14. Furthermore, the barrier layer 13 is also formed on the main surface 2b by the ALD method. That is, in step S27, a process of forming the barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14, and a process of forming the barrier layer 13 on the main surface 2b by the ALD method are performed. In step S27, a process of forming a barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14 corresponds to a seventh process.

[0075] Next, the sacrificial layer 14 and the barrier layer 13 are removed (step S28). Specifically, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed. That is, in step S28, a process of removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 is performed. Step S28 corresponds to the eighth process.

[0076] In the first modified example, the step of forming the organic semiconductor layer 5 and the step of forming the sacrificial layer 14 are carried out separately, so that the organic semiconductor layer 5 and the sacrificial layer 14 can be formed in a manner suitable for each.

[0077] In the first modified example, the organic semiconductor layer 5 is formed by a printing method under first conditions, and the sacrificial layer 14 is formed by a printing method under second conditions different from the first conditions, so that the organic semiconductor layer 5 and the sacrificial layer 14 can be formed in a manner suitable for each.

[0078] A method for manufacturing an organic semiconductor element 1 according to the second modified example will be described with reference to the flow chart shown in FIG. 9. The second modified example differs from the above-described embodiment in the order of forming the organic semiconductor layer 5, the second electrode 7, the second wiring 12, and the sacrificial layer 14. Furthermore, the second modified example differs from the above-described embodiment in the formation of the second wiring. Below, the differences between the above-described embodiment and the second modified example will be mainly described.

[0079] First, a substrate 2 having a main surface 2a is prepared (step S31). Step S31 corresponds to a first process.

[0080] 10(a), the first electrode 3, the first terminal 8, and the first wiring 9 are formed (step S32). Specifically, the first electrode 3, the first terminal 8, and the first wiring 9 are formed on the main surface 2a. That is, in step S32, a step of forming the first electrode 3 on the main surface 2a, a step of forming the first terminal 8 on the main surface 2a, and a step of forming the first wiring 9 on the main surface 2a are performed. The first electrode 3, the first terminal 8, and the first wiring 9 are formed simultaneously and integrally. The step of forming the first terminal 8 on the main surface 2a in step S32 corresponds to the second step.

[0081] 10(b), the first functional layer 4 is formed (step S33). Specifically, the first functional layer 4 is formed on the first electrode 3. That is, in step S33, a process of forming the first functional layer 4 on the first electrode 3 is carried out. Step S33 corresponds to the tenth process.

[0082] Next, as shown in (c) of Fig. 10, the organic semiconductor layer 5 is formed (step S34). Specifically, the organic semiconductor layer 5 is formed on the first functional layer 4. As described above, in the second modified example, the first functional layer 4 is also formed on the first electrode 3, so it can be said that the organic semiconductor layer 5 is formed on the first electrode 3. That is, in step S34, a process of forming the organic semiconductor layer 5 on the first electrode 3 is carried out. Step S34 corresponds to the fourth process.

[0083] 10(d), the second functional layer 6, the second electrode 7, the second terminal 11, and the second wiring 12 are formed (step S35). Specifically, the second functional layer 6 is formed on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6, and the second terminal 11 and the second wiring 12 are formed on the main surface 2a. As described above, in the second modified example, the second functional layer 6 is formed on the organic semiconductor layer 5, so it can be said that the second electrode 7 is formed on the organic semiconductor layer 5. That is, in step S35, a step of forming the second functional layer 6 on the organic semiconductor layer 5, a step of forming the second electrode 7 on the organic semiconductor layer 5, and a step of forming the second wiring 12 on the main surface 2a are performed. Furthermore, in the step of forming the second electrode 7 on the organic semiconductor layer 5, the second electrode 7 is formed on the second functional layer 6. The second wiring is formed by the material of the second electrode 7. The second electrode 7 and the second wiring 12 are formed simultaneously and integrally. In step S34, the process of forming the second functional layer 6 on the organic semiconductor layer 5 corresponds to the eleventh process, and the process of forming the second electrode 7 on the organic semiconductor layer 5 corresponds to the fifth process.

[0084] 10(e), a sacrificial layer 14 is formed (step S36). Specifically, the sacrificial layer 14 is formed in a predetermined region on the main surface 2a, and the predetermined region includes a region on the first terminal 8 and a region on the second terminal 11. That is, in step S36, the sacrificial layer 14 is formed on the first terminal 8 and the second terminal 11. Step S36 corresponds to the sixth process.

[0085] Subsequently, the barrier layer 13 is formed (step S37). Specifically, the barrier layer 13 is formed on the main surface 2a by the ALD method so as to cover the first terminal 8, the first wiring 9, the second terminal 11, the second wiring 12, the first electrode 3, the second electrode 7, the first functional layer 4, the second functional layer 6, the organic semiconductor layer 5, and the sacrificial layer 14. Furthermore, the barrier layer 13 is also formed on the main surface 2b by the ALD method. That is, in step S37, a process of forming the barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14, and a process of forming the barrier layer 13 on the main surface 2b by the ALD method are performed. In step S37, a process of forming a barrier layer 13 on the main surface 2a by the ALD method so as to cover the first terminal 8, the first electrode 3, the second electrode 7, the organic semiconductor layer 5, and the sacrificial layer 14 corresponds to the seventh process.

[0086] Next, the sacrificial layer 14 and the barrier layer 13 are removed (step S38). Specifically, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed. That is, in step S38, a process of removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 is performed. Step S38 corresponds to the eighth process.

[0087] In the second modified example, after the second functional layer 6, the second electrode 7, the second terminal 11, and the second wiring 12 are formed in step S35, the sacrificial layer 14 is formed in step S36. In this case, the second electrode 7, the second terminal 11, and the second wiring 12 can be formed simultaneously and integrally. Therefore, according to the second modified example, it is possible to increase the degree of freedom in forming the second electrode 7, such as the selection of a suitable material.

[0088] A manufacturing method of the organic semiconductor element 1 according to the third modified example will be described. The third modified example differs from the above-described embodiment in terms of a predetermined region on the main surface 2a where the sacrificial layer 14 is formed. The following mainly describes the differences between the above-described embodiment and the third modified example.

[0089] As shown in FIG. 11, in the third modification, a transmission window 15 for transmitting light is formed on the main surface 2a of the substrate 2. For example, the transmission window 15 is used when light irradiated from the main surface 2b side of the substrate 2 is made incident on a sample arranged on the main surface 2a side of the substrate 2 and a signal is acquired from the sample. Therefore, the transmission window 15 can be said to be a window for transmitting light irradiated from the main surface 2b side of the substrate 2. For example, a phosphor or a wavelength filter may be used for the transmission window 15. In the third modification, the predetermined region in which the sacrificial layer 14 is formed further includes a region on the transmission window 15 in addition to the region on the first terminal 8 and the region on the second terminal 11. Therefore, the sacrificial layer 14 is formed on the transmission window 15 in addition to the first terminal 8 and the second terminal 11. In this case, by removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14, as shown in Fig. 11, the barrier layer 13 is provided with a third opening 13c exposing the transmission window 15 in addition to the first opening 13a and the second opening 13b exposing the first terminal 8 and the second terminal 11. As a result, the transmission window 15 is exposed to the outside through the third opening 13c.

[0090] As described above, the transmission window 15 is a window for transmitting light irradiated from the main surface 2b side of the substrate 2. If the transmission window 15 is covered with the barrier layer 13, there is a risk of the light transmittance decreasing. In the third modification, the predetermined region where the sacrificial layer 14 is formed further includes the region on the transmission window 15, so that the transmission window 15 can be exposed. Therefore, according to the third modification, it is possible to suppress a decrease in the light transmittance in the transmission window 15.

[0091] Although the embodiment and each modification of the present invention have been described above, the present invention is not limited to the above embodiment and each modification. For example, in the above embodiment and each modification, the organic semiconductor element 1 may be a light receiving element or a light emitting element. When the organic semiconductor element 1 is a light receiving element, light may be incident from the main surface 2b side of the substrate 2, or light may be incident from the main surface 2a side of the substrate 2.

[0092] Furthermore, the materials of the first electrode 3 and the second electrode 7 are not limited to the combinations in the above-described embodiments and modifications. That is, the materials of the first electrode 3 and the second electrode 7 may be the same material. Alternatively, the materials of the first electrode 3 and the second electrode 7 may be interchangeable.

[0093] In addition, in the above embodiment and each modified example, the first functional layer 4 is formed on the first electrode 3, and the second functional layer 6 is formed on the organic semiconductor layer 5, but the position where the first functional layer 4 is formed and the position where the second functional layer 6 is formed are not limited to the above-mentioned positions. The first functional layer 4 may be formed on the first terminal 8 and the first wiring 9 in addition to the first electrode 3. The second functional layer 6 may be formed under the second terminal 11 and the second wiring 12 in addition to the organic semiconductor layer 5. That is, the second functional layer 6 may be formed between the main surface 2a and the second terminal 11 and between the main surface 2a and the second wiring 12.

[0094] In addition, in the above embodiment and each modified example, the organic semiconductor element 1 includes the first functional layer 4 and the second functional layer 6, but the organic semiconductor element 1 may not include the first functional layer 4 and the second functional layer 6. In this case, the organic semiconductor layer 5 is formed directly on the first electrode 3, and the second electrode 7 is formed directly on the organic semiconductor layer 5. Alternatively, the organic semiconductor element 1 may include only one of the first functional layer 4 and the second functional layer 6. When the organic semiconductor element 1 includes only the first functional layer 4, the second electrode 7 is formed directly on the organic semiconductor layer 5, and when the organic semiconductor element 1 includes only the second functional layer 6, the organic semiconductor layer 5 is formed directly on the first electrode 3.

[0095] In addition, in the above embodiment and each modified example, the outer edge portion of the organic semiconductor layer 5 is disposed so as to surround the entire periphery of the first electrode 3 when viewed from the Z-axis direction, but the arrangement of the outer edge portion of the organic semiconductor layer 5 is not limited to the above-mentioned arrangement. The outer edge portion of the organic semiconductor layer 5 only needs to be disposed at least on the second wiring 12 side when viewed from the Z-axis direction, and does not have to be disposed so as to surround the entire periphery of the first electrode 3.

[0096] In addition, in the above embodiment and each modified example, the organic semiconductor element 1 includes the second terminal 11 and the second wiring 12, but the organic semiconductor element 1 does not necessarily have to include the second terminal 11 and the second wiring 12. In this case, the second electrode 7 also functions as the second terminal. When the second electrode 7 also functions as the second terminal, the predetermined region on the main surface 2a where the sacrificial layer 14 is formed includes the region on the first terminal and the region on the second electrode. In other words, when the second electrode 7 also functions as a terminal, the sacrificial layer 14 is formed on the first terminal and the second electrode.

[0097] In the above embodiment and each modified example, the barrier layer 13 is formed on the main surface 2a and the main surface 2b of the substrate 2, but the barrier layer 13 may be formed only on the main surface 2a of the substrate 2. In this case, the main surface 2b may be covered with, for example, tape before forming the barrier layer 13. As a result, the barrier layer 13 is formed only on the main surface 2a of the substrate 2.

[0098] In the above embodiment and each modified example, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 are removed by a solvent, but the method for removing the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 is not limited to the above-mentioned method. For example, the sacrificial layer 14 and the portion of the barrier layer 13 covering the sacrificial layer 14 may be removed by applying only a physical impact without using a solvent.

[0099] In the above embodiment and each modification, a plurality of steps may be performed consecutively, or a plurality of steps may be performed with a time interval therebetween.

[0100] The timing at which the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 are formed is not limited to the above timing. For example, the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 may be formed in advance on the main surface 2a of the substrate 2, and the substrate 2 may be stored. Alternatively, at least one of the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 may be formed in advance on the main surface 2a of the substrate 2, and the substrate 2 may be stored. After the substrate 2 is stored, the following steps may be performed at a time interval. Alternatively, the following steps may be performed after preparing a substrate 2 on which at least one of the first electrode 3, the first terminal 8, the first wiring 9, the second terminal 11, and the first portion 121 of the second wiring 12 is formed in advance on the main surface 2a. In these cases, it is preferable that the steps following the step of forming the organic semiconductor layer 5 on the first electrode 3 are carried out continuously. [Explanation of symbols]

[0101] 1...organic semiconductor element, 2...substrate, 2a...main surface, 3...first electrode, 4...first functional layer, 5...organic semiconductor layer, 6...second functional layer, 7...second electrode, 8...first terminal, 11...second terminal, 13...barrier layer, 14...sacrificial layer.

Claims

1. A first step of providing a substrate having a main surface; a second step of forming a first terminal on the main surface after at least the first step; a third step of forming, after at least the first step, a first electrode on the main surface, the first electrode being electrically connected to the first terminal; a fourth step of forming an organic semiconductor layer on the first electrode after at least the third step; a fifth step of forming a second electrode on the organic semiconductor layer after at least the fourth step; a sixth step of forming a sacrificial layer made of the same organic material as the organic semiconductor layer in a predetermined region on the main surface after at least the first step; a seventh step of forming a barrier layer on the main surface by an ALD method so as to cover the first terminal, the first electrode, the second electrode, the organic semiconductor layer, and the sacrificial layer after the second step, the fifth step, and the sixth step; an eighth step of removing the sacrificial layer and a portion of the barrier layer covering the sacrificial layer after the seventh step, The method for manufacturing an organic semiconductor element, wherein the organic semiconductor layer and the sacrificial layer are separated from each other after the second step, the fifth step, and the sixth step, and before the seventh step.

2. a ninth step of forming, at least after the first step and before the sixth step, a second terminal electrically connected to the second electrode on the main surface; The sixth step is carried out after at least the second step and the ninth step; The method for manufacturing an organic semiconductor element according to claim 1 , wherein in the sixth step, the predetermined region on the main surface includes a region above the first terminal and a region above the second terminal.

3. The method for manufacturing an organic semiconductor device according to claim 1 , wherein the fourth step and the sixth step are carried out simultaneously.

4. The method for manufacturing an organic semiconductor element according to claim 3 , wherein in the fourth step and the sixth step, the organic semiconductor layer and the sacrificial layer are formed by a printing method under the same conditions.

5. The method for manufacturing an organic semiconductor device according to claim 1 , wherein the fourth step and the sixth step are carried out separately.

6. In the fourth step, the organic semiconductor layer is formed by a printing method under a first condition; The method for manufacturing an organic semiconductor element according to claim 5 , wherein in the sixth step, the sacrificial layer is formed by a printing method under second conditions different from the first conditions.

7. a tenth step of forming a first functional layer on the first electrode after the third step and before the fourth step; and an eleventh step of forming a second functional layer on the organic semiconductor layer after the fourth step and before the fifth step, In the fourth step, the organic semiconductor layer is formed on the first functional layer, The method for manufacturing an organic semiconductor element according to claim 1 , wherein the fifth step includes forming the second electrode on the second functional layer.

8. The method for manufacturing an organic semiconductor device according to claim 1 , wherein in the eighth step, the sacrificial layer and the portion of the barrier layer are removed with a solvent.

9. 2. The method for manufacturing an organic semiconductor element according to claim 1, wherein in the seventh step, the barrier layer is formed by alternately stacking a plurality of first layers made of a first material and a plurality of second layers made of a second material different from the first material.

10. 10. The method for manufacturing an organic semiconductor element according to claim 1, wherein after the second step, the fifth step, and the sixth step, and before the seventh step, the thickness of the sacrificial layer is greater than the thickness of the organic semiconductor layer.

11. The method for manufacturing an organic semiconductor element according to any one of claims 1 to 9, wherein in the sixth step, the sacrificial layer is formed so that the ratio of the length of the sacrificial layer to the thickness of the sacrificial layer is 100 or more and 10,000 or less.

12. 10. The method for manufacturing an organic semiconductor device according to claim 1, wherein after the seventh step, the thickness of the sacrificial layer is 10 times or more the thickness of the barrier layer.

13. 10. The method for manufacturing an organic semiconductor element according to claim 1, wherein after the third step and the sixth step, the thickness of the sacrificial layer is equal to or greater than the thickness of the first electrode.

14. 10. The method for manufacturing an organic semiconductor element according to claim 1, wherein after the fifth step and the sixth step, the thickness of the sacrificial layer is equal to or greater than the thickness of the second electrode.

15. 10. The method for manufacturing an organic semiconductor element according to claim 1, wherein in the seventh step, the barrier layer is formed so that the thickness of the barrier layer is 1 / 10 or less of the total thickness of the first electrode, the organic semiconductor layer, and the second electrode.

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