Sensor device and method for manufacturing the same

Abstract

To provide a sensor device which has a more stable detection performance and can respond to further downsizing.SOLUTION: The sensor device includes: a supporting body with a first surface; a substrate with a second surface; a sensor element part provided in the second surface; a sensor chip provided in the first surface; and a conductive pillar provided in the first surface. The height of the pillar from the first surface to the upper end of the conductive pillar is higher than the height of the chip from the first surface and to second surface. The conductive pillar has a structure in which a first hierarchal part with a first cross-sectional area and a second hierarchal part with a second cross-sectional area smaller than the first cross-sectional area are sequentially deposited on each other from the first surface side.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The present disclosure relates to a sensor device and a manufacturing method thereof. [Background technology]

[0002] In recent years, small sensor devices having a sensor element provided on a substrate have been used for various purposes. As an example of the sensor element, an optical device serving as an image sensor device in which an optical element that performs photoelectric conversion of incident light is provided on a transparent substrate is known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2014 / 083746 Summary of the Invention [Problem to be solved by the invention]

[0004] It is preferable that the sensor device has stable detection sensitivity and is small in size.

[0005] Therefore, there is a demand for a sensor device that has more stable detection performance and can be made even smaller. [Means for solving the problem]

[0006] A sensor device according to an embodiment of the present disclosure includes a support substrate having a first surface, a sensor chip provided on the first surface, the sensor substrate having a second surface and a sensor element portion provided on the second surface, and a conductive pillar provided on the first surface of the support substrate at a position different from the sensor chip and electrically connected to the sensor element portion. Here, the pillar height from the first surface to the top end of the conductive pillar is higher than the chip height from the first surface to the second surface. Furthermore, the conductive pillar includes a structure in which, from the first surface side, a first layer portion having a first cross-sectional area and a second layer portion having a second cross-sectional area smaller than the first cross-sectional area are stacked.

[0007] In a sensor device according to one embodiment of the present disclosure, a conductive pillar connected to a sensor element portion of a sensor chip includes a first layer portion and a second layer portion, and the second cross-sectional area of ​​the second layer portion is smaller than the first cross-sectional area of ​​the first layer portion. This reduces thermal stress on the sensor element portion of the sensor chip even when the conductive pillar thermally expands due to an increase in environmental temperature or external heating, thereby stabilizing detection performance. Effect of the Invention

[0008] According to a sensor device according to an embodiment of the present disclosure, the sensor device has more stable detection performance and is suitable for further miniaturization. Note that the effects of the present disclosure are not limited to this, and may be any of the effects described below. [Brief description of the drawings]

[0009] [Figure 1A] 1 is a cross-sectional view illustrating an example of an overall configuration of an angle sensor device according to an embodiment of the present disclosure. [Figure 1B] 1B is a schematic plan view showing an enlarged portion of the angle sensor device shown in FIG. 1A. [Diagram 2] FIG. 1B is a circuit diagram of the angle sensor device shown in FIG. 1A. [Figure 3A] 1B is an explanatory diagram illustrating a step of a method for manufacturing the angle sensor device shown in FIG. 1A. [Figure 3B] FIG. 3B is an explanatory diagram showing a step following FIG. 3A. [Figure 3C] FIG. 3C is an explanatory diagram showing a step following FIG. 3B. [Figure 3D] FIG. 3D is an explanatory diagram showing a step following FIG. 3C. [Figure 3E] FIG. 3B is an explanatory diagram showing a step following FIG. 3D. [Figure 4] FIG. 1 is a cross-sectional view illustrating an example of an overall configuration of an angle sensor device according to a first modified example of the present disclosure. [Diagram 5] FIG. 11 is a cross-sectional view illustrating an example of an overall configuration of an angle sensor device according to a second modified example of the present disclosure. [Figure 6] FIG. 11 is a cross-sectional view illustrating an example of an overall configuration of an angle sensor device according to a third modified example of the present disclosure. [Figure 7] FIG. 11 is a cross-sectional view illustrating an example of an overall configuration of an angle sensor device according to a fourth modified example of the present disclosure. [Figure 8A] 4A to 4C are explanatory diagrams illustrating a process of a manufacturing method of the angle sensor device according to the first reference example of the present disclosure. [Figure 8B] FIG. 8B is an explanatory diagram showing a step following FIG. 8A. [Figure 8C] FIG. 8C is an explanatory diagram showing a step following FIG. 8B. [Figure 8D] FIG. 8D is an explanatory diagram showing a step following FIG. 8C. [Figure 8E] FIG. 8E is an explanatory diagram showing a step following FIG. 8D. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 0. Background 1. One embodiment: an example of an angle sensor device having a magnetoresistive effect element. 1.1 Configuration of angle sensor device 1 1.2 Manufacturing method of the angle sensor device 1 1.3 Actions and Effects 2. Working Example

[0011] <0. Background> Conventionally, angle sensor devices are used to detect the attitude or rotation angle of an object by detecting changes in an external magnetic field. Such angle sensor devices are placed in a limited space near a rotating body to which a magnet is attached, so there is a demand for miniaturization of the angle sensor devices. In addition, since a higher degree of measurement accuracy is also required, it is desirable to mount a larger number of sensor elements at a higher density in a limited area.

[0012] Therefore, in consideration of the above problems, the applicant has conducted repeated studies and improvements, and as a result, has provided an angle sensor device that has high measurement accuracy and can be made even smaller.

[0013] <1. First embodiment> [1.1 Configuration of angle sensor device 1] First, a configuration of an angle sensor device 1 according to an embodiment of the present invention will be described with reference to Figures 1A to 2. The angle sensor device 1 is a specific example corresponding to a "sensor device" according to one embodiment of the present invention.

[0014] FIG. 1A is a cross-sectional view that shows a schematic cross section of an angle sensor device 1. FIG. 1B is a plan view that shows an enlarged part of the angle sensor device 1. As shown in FIG. 1A, the angle sensor device 1 includes a support substrate 2, a sensor chip 3, a conductive pillar 4, wiring 5, a connection layer 6, and an insulating film 7. The sensor chip 3 is stacked on the support substrate 2. More specifically, the sensor chip 3 is provided on a front surface 2FS of the support substrate 2. The sensor chip 3 is covered with an insulating film 7. A conductive pillar 4 is provided on the front surface 2FS of the support substrate 2 at a position different from that of the sensor chip 3 so as to be adjacent to the sensor chip 3. The conductive pillar 4 extends in the thickness direction (Z-axis direction) so as to penetrate the insulating film 7.

[0015] In the angle sensor device 1 of this embodiment, the support substrate 2 and the sensor chip 3 each extend along an XY plane including the X-axis direction and the Y-axis direction which are perpendicular to each other. In this embodiment, the thickness direction of the support substrate 2 and the sensor chip 3 is the Z-axis direction.

[0016] (Support substrate 2) The support substrate 2 is, for example, a substrate having an ASIC (Application Specific Integrated Circuit). A terminal portion 21 is provided on a front surface 2FS of the support substrate 2. The support substrate 2 is not limited to a substrate having an ASIC, and may be a simple Si substrate or sapphire substrate, or may be, for example, a relay substrate that relays between a substrate having an ASIC and the sensor chip 3.

[0017] (Sensor chip 3) The sensor chip 3 has an appearance of a substantially quadrangular prism having, for example, a substantially square or substantially rectangular planar shape when viewed in a plane along the XY plane. The sensor chip 3 has a laminated structure of a sensor substrate 31 and a sensor element portion 32. The sensor chip 3 further has a pad portion 33 electrically connected to the sensor element portion 32.

[0018] The sensor substrate 31 is, for example, a silicon substrate. The thickness of the sensor substrate 31 is, for example, 200 μm or less. The sensor substrate 31 is, for example, a flat plate member having a surface 31FS having a substantially square or rectangular planar shape. The surface 31FS is a plane that is substantially perpendicular to the Z-axis direction, which is the thickness direction of the sensor substrate 31.

[0019] The sensor element section 32 is provided, for example, in a central region on the surface 31FS of the sensor substrate 31. The sensor element section 32 includes one or more magnetic sensor elements E. The magnetic sensor elements E are, for example, tunnel magnetoresistance effect elements (hereinafter, referred to as TMR elements). The magnetic sensor elements E are sensor elements whose sensitivity changes due to stresses such as thermal stress and mechanical stress. The sensor element section 32 has a plurality of sensor element groups. In the configuration example shown in FIG. 1B, the sensor element section 32 includes four magnetic sensor elements E1 to E4 (for convenience, they are referred to as E1 to E4 in FIG. 1B) arranged in a matrix. Each of the magnetic sensor elements E1 to E4 is, for example, composed of a plurality of TMR films and a plurality of wirings that connect the plurality of TMR films in series. The magnetic sensor elements E1 to E4 constitute, for example, the resistor sections R1 to R4 of the full bridge circuit 8 shown in FIG. 2. FIG. 2 is a circuit diagram showing a circuit configuration example of the angle sensor device 1. The angle sensor device 1 includes, for example, a full bridge circuit 8, a differential detector AMP, and an arithmetic circuit 9. The angle sensor device 1 is configured to be capable of detecting a change in an external magnetic field with respect to the sensor chip 3 based on the difference between the potential obtained from a connection point T1 of the full bridge circuit 8 and the potential obtained from a connection point T2.

[0020] The full bridge circuit 8 includes four resistors R1 to R4. The resistor R1 is composed of a magnetic sensor element E1, the resistor R2 is composed of a magnetic sensor element E2, the resistor R3 is composed of a magnetic sensor element E3, and the resistor R4 is composed of a magnetic sensor element E4. The full bridge circuit 8 is formed by connecting the resistor R1 and the resistor R2 in series with the resistor R3 and the resistor R4 in series in parallel. More specifically, in the full bridge circuit 8, one end of the resistor R1 and one end of the resistor R2 are connected at a connection point T1, one end of the resistor R3 and one end of the resistor R4 are connected at a connection point T2, the other end of the resistor R1 and the other end of the resistor R4 are connected at a connection point T3, and the other end of the resistor R2 and the other end of the resistor R3 are connected at a connection point T4. The connection point T3 is connected to a power supply Vcc, and the connection point T4 is connected to a ground terminal GND. The connection point T1 and the connection point T2 are each connected to an input terminal of the differential detector AMP.

[0021] Each of the resistors R1 to R4 can detect a change in the signal magnetic field to be detected. For example, the resistance value of the resistors R1 and R3 decreases when a signal magnetic field in the +Y direction is applied, and increases when a signal magnetic field in the -Y direction is applied. On the other hand, the resistance value of the resistors R2 and R4 increases when a signal magnetic field in the +Y direction is applied, and decreases when a signal magnetic field in the -Y direction is applied. Therefore, the resistors R1 and R3 and the resistors R2 and R4 output signals that are out of phase with each other, for example, 180°, in response to the change in the signal magnetic field. The signal extracted from the full bridge circuit 8 flows into the differential detector AMP. The differential detector AMP detects the potential difference between the connection points T1 and T2 when a voltage is applied between the connection points T3 and T4, and outputs the potential difference to the calculation circuit 9 as a differential signal SL.

[0022] (Conductive pillar 4) As described above, the conductive pillar 4 is provided on the front surface 2FS of the support substrate 2 at a position different from the sensor chip 3, and is electrically connected to the sensor element portion 32 via the wiring 5, the connection layer 6, and the pad portion 33. The conductive pillar 4 is made of a highly conductive material such as Cu (copper). The bottom end 4BT of the conductive pillar 4 is connected to the terminal portion 21 provided on the front surface 2FS of the support substrate 2. The pillar height H1 from the front surface 2FS to the top end 4UT of the conductive pillar 4 is higher than the chip height H2 from the front surface 2FS to the front surface 31FS. The conductive pillar 4 has a structure in which a first-layer portion 41 and a second-layer portion 42 are laminated in this order from the front surface 2FS side. Here, as shown in FIG. 1B, the cross-sectional area A41 of the first-layer portion 41 is larger than the cross-sectional area A42 of the second-layer portion 42. In the example shown in FIG. 1B, both the first-layer portion 41 and the second-layer portion 42 have a substantially cylindrical outer shape. Therefore, the outer diameter φ41 of the first layer portion 41 is larger than the outer diameter φ42 of the second layer portion 42. Therefore, in the XY plane, the second distance D2 between the second layer portion 42 and the sensor substrate 31 of the sensor chip 3 is longer than the first distance D1 between the first layer portion 41 and the sensor substrate 31 of the sensor chip 3. Furthermore, the first layer portion 41 has a first height H41 in the Z axis direction. The second layer portion 42 has a second height H42 in the Z axis direction. It is preferable that the first height H41 be larger than the second height H42.

[0023] (Insulating film 7) The insulating film 7 is made of a resin material such as polyimide or epoxy resin.

[0024] (Wire 5) The wiring 5 is provided above the sensor chip 3 and the conductive pillar 4. Therefore, the sensor chip 3 and the conductive pillar 4 are each provided in a layer between the support substrate 2 and the wiring 5. The wiring 5 is made of a conductive material such as Cu (copper), Al (aluminum), or W (tungsten), and electrically connects the sensor element portion 32 and the conductive pillar 4. In the configuration example shown in FIG. 1A, the lower surface of the wiring 5 contacts the upper end 4UT of the conductive pillar 4 and also contacts the upper end of the connection layer 6. The lower end of the connection layer 6 contacts a pad portion 33 provided on the front surface 31FS of the sensor substrate 31.

[0025] [1.2 Manufacturing method of angle sensor device 1] Next, a method for manufacturing the angle sensor device 1 according to an embodiment of the present invention will be described with reference to Figures 3A to 3E in addition to Figures 1A and 1B. Figures 3A to 3E are schematic diagrams illustrating steps in an example of the method for manufacturing the angle sensor device 1.

[0026] First, the support substrate 2 is prepared, and the terminal portion 21 is formed on the front surface 2FS of the support substrate 2 as shown in FIG. 3A.

[0027] Next, as shown in FIG. 3B, a first layer portion 41 having a first height H41 is formed on the terminal portion 21 by electrolytic plating or the like.

[0028] Next, a plurality of sensor element portions 32 each including the magnetic sensor elements E1-E4 and a plurality of pad portions 33 are provided on a mother substrate such as a silicon wafer, which will be cut into a plurality of sensor substrates 31 later. The mother substrate is then cut into regions corresponding to the sensor element portions 32 to form a plurality of sensor chips 3, each including the sensor element portions 32 and the pad portions 33, on the front surface 31FS of the sensor substrate 31. Thereafter, as shown in FIG. 3C, the sensor chip 3 is placed on the front surface 2FS of the support substrate 2. At this time, the thickness of the sensor substrate 31 is adjusted so that the chip height H2 of the sensor chip 3 is greater than the first height H41 of the first layer portion 41.

[0029] 3D, an insulating film 7 is formed to cover the surface 2FS of the support substrate 2, the first layer portion 41, and the sensor chip 3. At this time, it is preferable to form the insulating film 7 so as to fill the gap between the first layer portion 41 and the sensor chip 3. Furthermore, by making the thickness of the insulating film 7 thicker than the chip height H2, the upper surface of the insulating film 7 is positioned higher than the surface 31FS of the sensor chip 3. Methods for forming the insulating film 7 include, for example, spin coating, printing, lamination, transfer molding, and compression molding.

[0030] Next, as shown in FIG. 3E, an opening is formed at a predetermined position in the insulating film 7. Specifically, opening 42K is formed at a position corresponding to first-layer portion 41 in the Z-axis direction, and opening 6K is formed at a position corresponding to pad portion 33 in the Z-axis direction. By providing opening 42K, a part of the upper surface of first-layer portion 41 is exposed. By providing opening 6K, a part of the upper surface of pad portion 33 is exposed. If insulating film 7 is made of a photosensitive material, opening 42K and opening 6K can be formed, for example, by photolithography. If insulating film 7 is made of a non-photosensitive material, opening 42K and opening 6K can be formed, for example, by laser processing or chemical treatment. Here, the opening cross-sectional area of ​​opening 42K along the XY plane is made smaller than the cross-sectional area A41 ( FIG. 1B ) along the XY plane of first-layer portion 41.

[0031] Finally, the second layer portion 42, the wiring 5, and the connection layer 6 are formed by filling the openings 42K and the openings 6K and selectively covering parts of the insulating film 7 with a conductive material. The second layer portion 42, the wiring 5, and the connection layer 6 can be formed using a method such as sputtering, CVD, electroless plating, or electrolytic plating. The depth of the opening 42K, i.e., the thickness of the portion of the insulating film 7 that covers the sensor chip 3, may be adjusted so that the second height H42 of the second layer portion 42 is smaller than the first height H41. Furthermore, the cross-sectional area of ​​the opening 42K along the XY plane is made smaller than the cross-sectional area A41 of the first layer portion 41 along the XY plane, so that the cross-sectional area A42 ( FIG. 1B ) along the XY plane of the second layer portion 42 can be made smaller than the cross-sectional area A41 of the first layer portion 41.

[0032] Through the above steps, the angle sensor device 1 (FIG. 1A) of the present embodiment is completed.

[0033] [1.3 Actions and Effects] As described above, in the angle sensor device 1 of this embodiment, the sensor chip 3 having the sensor substrate 31 with the surface 31FS and the sensor element portion 32 provided on the surface 31FS, and the conductive pillar 4 electrically connected to the sensor element portion 32 are provided adjacent to each other on the surface 2FS of the support substrate 2. Here, the pillar height H1 from the surface 2FS to the upper end 4UT of the conductive pillar 4 is higher than the chip height H2 from the surface 2FS to the surface 31FS. Furthermore, the conductive pillar 4 includes a structure in which, from the surface 2FS side, a first-layer portion 41 having a cross-sectional area A41 and a second-layer portion 42 having a cross-sectional area A42 smaller than the cross-sectional area A41 are stacked. Therefore, in the angle sensor device 1 of this embodiment, even if the conductive pillar 4 thermally expands due to an increase in the environmental temperature or external heating, the thermal stress on the sensor element portion 32 of the sensor chip 3 is reduced compared to when the cross-sectional area A42 of the second-layer portion 42 is substantially the same as the cross-sectional area A41 of the first-layer portion 41. This stabilizes the detection performance of the angle sensor device 1. In order to miniaturize the angle sensor device 1, the conductive pillars 4 and the sensor chip 3 are disposed closer to each other, but even in such a case of high integration, thermal stress is less likely to affect the detection performance of the sensor element portion 32. Therefore, the angle sensor device 1 of this embodiment has more stable detection performance and can be made even smaller.

[0034] However, if the cross-sectional area A42 of the second layer portion 42 is substantially the same as the cross-sectional area A41 of the first layer portion 41 or is larger than the cross-sectional area A41 of the first layer portion 41, the second layer portion 42 will undergo significant thermal expansion due to an increase in environmental temperature or external heating. In that case, a larger thermal stress will be applied to the sensor element portion 32 of the sensor chip 3, which may adversely affect the measurement accuracy of the sensor element portion 32. In contrast, in this embodiment, the cross-sectional area A42 of the second layer portion 42 is made smaller than the cross-sectional area A41 of the first layer portion 41, thereby minimizing thermal expansion of the second layer portion 42 located in the vicinity of the sensor element portion 32. As a result, the angle sensor device 1 of this embodiment can ensure more stable detection performance.

[0035] In particular, in the angle sensor device 1, if the second layer portion 42 is positioned so as to overlap the sensor element portion 32 in the in-plane direction along the front surface 2FS, the effects of thermal stress can be reduced more effectively.

[0036] Furthermore, in the angle sensor device 1, the effects of thermal stress can be more effectively reduced by making the second distance D2 between the sensor chip 3 and the second layer portion 42 longer than the first distance D1 between the sensor chip 3 and the first layer portion 41 in the in-plane direction along the surface 2FS.

[0037] Furthermore, in the angle sensor device 1, by making the second height H42 of the second level portion 42 lower than the first height H41 of the first level portion 41, it is possible to keep the outer diameter of the opening 42K small when forming the second level portion 42. This makes it possible to keep the area occupied in the in-plane direction of the angle sensor device 1 small, which is advantageous for making the angle sensor device 1 more compact.

[0038] Furthermore, in the manufacturing method of the angle sensor device 1 of this embodiment, the first-level portion 41 standing on the front surface 2FS of the support substrate 2 is embedded in the insulating film 7, and then an opening 42K is formed in the insulating film 7, and a conductive film is further embedded in the opening 42K to form the second-level portion 42. Therefore, the distance between the conductive pillar 4 and the sensor chip 3 can be narrowed compared to the manufacturing method of the angle sensor device as the first reference example shown in Figures 8A to 8D.

[0039] Specifically, in the manufacturing method of the angle sensor device as the first reference example, first, the terminal portion 121 is formed on the surface 102FS of the support substrate 102 as shown in FIG. 8A, and then, as shown in FIG. 8B, the sensor chip 103 is formed at a position on the surface 102FS other than the position where the terminal portion 121 is provided. The sensor chip 103 is formed in advance by providing the sensor element portion 132 and the pad portion 133 on the surface 131FS of the sensor substrate 131. Next, as shown in FIG. 8C, the insulating film 107 is formed so as to cover the surface 102FS of the support substrate 102 and the sensor chip 103. After that, as shown in FIG. 8D, an opening 104K is formed in the insulating film 107 at a position corresponding to the terminal portion 121 in the Z-axis direction, and an opening 106K is formed in the insulating film 107 at a position corresponding to the pad portion 133 in the Z-axis direction. Finally, as shown in FIG. 8E, the openings 104K and 106K are filled and a part of the insulating film 107 is selectively covered with a conductive material to form the conductive pillar 104, the wiring 105, and the connection layer 106. The above completes the angle sensor device 101 as the first reference example. However, in the angle sensor device 101 obtained in this manner, the opening 104K having a large depth is formed in forming the conductive pillar 104, so that the outer diameter of the upper end 104UT of the conductive pillar 104 tends to be larger than the outer diameter of the lower end 104BT of the conductive pillar 104. As a result, the area occupied in the in-plane direction of the angle sensor device 101 as the first reference example often becomes larger than the area occupied in the in-plane direction of the angle sensor device 1 of the present embodiment. In addition, in the manufacturing method of the angle sensor device 101, it is difficult to make the outer diameter in the vicinity of the upper end 104UT of the conductive pillar 104 smaller than the outer diameter in the vicinity of the lower end 104BT of the conductive pillar 104.

[0040] In the angle sensor device 1 of the present embodiment, the conductive pillar 4 has a layered structure of the first layer portion 41 and the second layer portion 42, and the first layer portion 41 and the second layer portion 42 are fabricated in separate processes, so that it is possible to make the depth of the opening 42K in the insulating film 7 shallower than the depth of the opening 104K as the first reference example. This makes it possible to keep the area occupied in the in-plane direction of the angle sensor device 1 small. Furthermore, because the first layer portion 41 and the second layer portion 42 are fabricated in separate processes, it is possible to make the cross-sectional area A42 of the second layer portion 42 smaller than the cross-sectional area A41 of the first layer portion 41.

[0041] The above-described embodiments are described to facilitate understanding of the present disclosure, and are not described to limit the present disclosure. Therefore, each element disclosed in the above embodiments is intended to include all design modifications and equivalents that fall within the technical scope of the present disclosure. In other words, the present disclosure is not limited to the above-described embodiments, and various modifications are possible.

[0042] (First Modification) For example, in the angle sensor device 1 of the above embodiment, the cross-sectional area A42 of the second layer portion 42 of the conductive pillar 4 is constant in the height direction (Z-axis direction), that is, the outer diameter of the second layer portion 42 is substantially cylindrical. However, the present disclosure is not limited to this. For example, as in the angle sensor device 1A as a first modified example shown in FIG. 4, the outer diameter of the second layer portion 42 may gradually change in the Z-axis direction. In the configuration example of FIG. 4, the outer diameter of the second layer portion 42 gradually increases with increasing distance from the front surface 2FS of the support substrate 2. In the angle sensor device 1A of FIG. 4, the wiring resistance of the conductive pillar 4 can be reduced compared to the angle sensor device 1 shown in FIG. 1A etc.

[0043] (Second Modification) Furthermore, in the present disclosure, for example, as in an angle sensor device 1B as a second modified example shown in FIG. 5, the center position of the second layer portion 42 may be made farther from the sensor element unit 32 in the XY plane than the center position of the first layer portion 41. This makes it possible to make the second distance D2 larger than in the angle sensor device 1 shown in FIG. 1A etc. As a result, in the angle sensor device 1B, the effect of the induced magnetic field generated by the current flowing through the second layer portion 42 on the sensor element unit 32 is reduced compared to the angle sensor device 1. Therefore, the angle sensor device 1B can ensure even more stable detection performance.

[0044] (Third Modification) In the present disclosure, for example, an angle sensor device 1C as a third modified example shown in Fig. 6 may further include a conductive layer 11 provided on a top surface 5FS of the wiring 5 opposite to the support substrate 2. The conductive layer 11 is, for example, a solder layer, flux, or a two-layer plating of Ni / Au, and is used as a connection terminal with the outside.

[0045] (Fourth Modification) Furthermore, in the present disclosure, the wiring 5 may be multi-layered, for example, as in an angle sensor device 1D as a fourth modified example shown in Fig. 7. That is, the wiring 5 may be configured by stacking a plurality of wiring layers 51 (51A to 51C) with vias V (V1, V2) interposed therebetween.

[0046] In the above embodiment, the magnetic sensor element is exemplified as the sensor element in the sensor element portion, but the present disclosure is not limited thereto. Specifically, a strain sensor element such as a metal foil strain gauge may be used as the sensor element.

[0047] Furthermore, the present disclosure may have the following configurations. <1> A support having a first surface; a sensor chip provided on the first surface, the sensor chip having a substrate having a second surface and a sensor element portion provided on the second surface; A conductive pillar provided on the first surface; Equipped with a pillar height from the first surface to a top end of the conductive pillar is greater than a tip height from the first surface to the second surface; The conductive pillar includes a structure in which a first layer portion having a first cross-sectional area and a second layer portion having a second cross-sectional area smaller than the first cross-sectional area are stacked in this order from the first surface side. Sensor device. <2> the second layer portion is located at a position overlapping the sensor element portion in an in-plane direction along the first surface. the above <1> The sensor device described herein. <3> In an in-plane direction along the first surface, a second distance between the sensor chip and the second layer portion is longer than a first distance between the sensor chip and the first layer portion. the above <1> or <2> The sensor device described herein. <4> The sensor element portion includes a sensor element whose sensitivity changes depending on stress. the above <1> from <3> 13. A sensor device according to claim 12, wherein <5> The sensor element is a magnetic sensor element or a strain sensor element. the above <4> The sensor device described herein. <6> Further, wiring 5 electrically connecting the sensor element portion and the conductive pillar is provided. The sensor chip and the conductive pillar are provided in a layer between the support and the wiring. the above <1> from <5> 13. A sensor device according to claim 12, wherein <7> A first height of the first layer portion is greater than a second height of the second layer portion. the above <1> from <6> 13. A sensor device according to claim 12, wherein <8> The wiring further includes a conductive layer provided on a surface opposite to the support. the above <6> The sensor device according to claim 1 . <9> The conductive pillar is provided at a position on the first surface different from the sensor chip and is electrically connected to the sensor element portion. the above <1> from <8> 13. A sensor device according to claim 12, wherein <10> Providing a substrate having a first surface; forming a conductive pillar on the first surface; disposing a sensor chip having a substrate having a second surface and a sensor element portion provided on the second surface at a position on the first surface different from the conductive pillar; forming an insulating film so as to bury the conductive pillar and the sensor chip provided on the first surface; forming a first opening in a first portion of the insulating film corresponding to the conductive pillar, and forming a second opening in a second portion of the insulating film corresponding to the sensor element portion; forming a conductive film so as to fill the first opening and the second opening and selectively cover a part of the insulating film, and electrically connecting the conductive pillar and the sensor element portion; Includes A method for manufacturing a sensor device. <11> an opening cross-sectional area of ​​the first opening along the first surface is made smaller than a first cross-sectional area of ​​the first layer portion along the first surface, thereby making a second cross-sectional area of ​​the second layer portion along the first surface smaller than the first cross-sectional area. the above <10> A method for manufacturing the sensor device described above. [Explanation of symbols]

[0048] 1...angle sensor device, 2...support substrate, 21...terminal portion, 2FS...surface, 3, 3A, 3B...sensor chip, 31...sensor substrate, 31FS...surface, 32...sensor element portion, 33...pad portion, 4...conductive pillar, 4BT...lower end, 4UT...upper end, 41...first layer portion, 42...second layer portion, 5...wiring, 6...connection layer, 7...insulating film, 8...full bridge circuit, 9...arithmetic circuit, E1 to E4...magnetic sensor element, R1 to R4...resistance portion, T1 to T4...connection point.

Claims

1. A support having a first surface; a sensor chip provided on the first surface, the sensor chip having a substrate having a second surface and a sensor element portion provided on the second surface; A conductive pillar provided on the first surface; Equipped with a pillar height from the first surface to an upper end of the conductive pillar is greater than a tip height from the first surface to the second surface; The conductive pillar includes a structure in which a first layer portion having a first cross-sectional area and a second layer portion having a second cross-sectional area smaller than the first cross-sectional area are stacked in this order from the first surface side. Sensor device.

2. the second layer portion is positioned to overlap the sensor element portion in an in-plane direction along the first surface. The sensor device according to claim 1.

3. In an in-plane direction along the first surface, a second distance between the second layer portion and the substrate of the sensor chip is longer than a first distance between the first layer portion and the substrate of the sensor chip. The sensor device according to claim 1.

4. The sensor element portion includes a sensor element whose sensitivity changes depending on stress. The sensor device according to any one of claims 1 to 3.

5. The sensor element is a magnetic sensor element or a strain sensor element. The sensor device according to claim 4.

6. Further, a wiring electrically connecting the sensor element portion and the conductive pillar is provided. The sensor chip and the conductive pillar are provided in a layer between the support and the wiring. The sensor device according to any one of claims 1 to 3.

7. A first height of the first layer portion is greater than a second height of the second layer portion. The sensor device according to any one of claims 1 to 3.

8. The wiring further includes a conductive layer provided on a surface opposite to the support. The sensor device according to claim 6.

9. The conductive pillar is provided at a position on the first surface different from the sensor chip and is electrically connected to the sensor element portion. The sensor device according to any one of claims 1 to 3.

10. Providing a support having a first surface; forming a first layer portion on the first surface; disposing a sensor chip on the first surface at a position different from the first layer portion, the sensor chip having a substrate having a second surface and a sensor element portion and a pad portion provided on the second surface; forming an insulating film to cover the first layer portion and the sensor chip provided on the first surface; forming a first opening in the insulating film at a position corresponding to the first level portion, and forming a second opening in the insulating film at a position corresponding to the pad portion; forming a conductive film so as to fill the first opening and the second opening, and to selectively cover a portion of the insulating film, thereby forming a conductive pillar in which a second layer portion is laminated on the first layer portion; Includes A method for manufacturing a sensor device.

11. An opening cross-sectional area of ​​the first opening along the first surface is made smaller than a first cross-sectional area of ​​the first layer portion along the first surface, thereby making a second cross-sectional area of ​​the second layer portion along the first surface smaller than the first cross-sectional area. A method for manufacturing the sensor device according to claim 10.

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