Resist underlayer film formation composition containing radical trap agent

Abstract

To provide a resist underlayer film formation composition having excellent storage stability which is used in a lithography process in semiconductor manufacturing.SOLUTION: A resist underlayer film formation composition includes a polymer containing disulfide bond in a main chain, a radical trap agent, and a solvent. The radical trap agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure whose number of carbon atoms is 6 to 40 or 2,2,6,6-tetramethylpiperidine structure.SELECTED DRAWING: None