Semiconductor device and power conversion apparatus

Abstract

To provide a technique capable of improving a degree of freedom for a position and a shape of a terminal and realizing downsizing of a semiconductor device.SOLUTION: A semiconductor device 202 comprises: a semiconductor element 3; an insulation substrate 2 where the semiconductor element 3 is loaded on one surface; conductor plates 4 and 5 electrically connected with the semiconductor element 3; a sealant 6 sealing the insulation substrate 2, the semiconductor element 3 and the conductor plates 4 and 5 in such a manner that the other surface of the insulation substrate 2 and one-side ends of the conductor plates 4 and 5 are exposed; a control terminal 7 and a main terminal 8 including one-side ends joined with the one-side ends of the conductor plates 4 and 5 outside of the sealant 6; and a housing 9 fixed closer to the other-side ends than the one-side ends of the control terminal 7 and the main terminal 8. In the housing 9, the control terminal 7 and the main terminal 8 are positioned in predetermined locations.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a power conversion device. [Background technology]

[0002] Patent Document 1 proposes a power conversion device in which an external connection terminal and a terminal of a semiconductor module (corresponding to a semiconductor device) are joined inside a case, thereby making it possible to reduce inductance. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2017 / 072870 Summary of the Invention [Problem to be solved by the invention]

[0004] In the technology described in Patent Document 1, the insulation distance between the components placed inside the case is maintained by filling the case with a sealant. However, filling the case with the sealant imposes structural constraints on not only the flow path of the sealant and the case shape, but also the position and shape of the terminals in the semiconductor device. This makes it difficult to realize miniaturization of the semiconductor device.

[0005] Therefore, an object of the present disclosure is to provide a technique that increases the degree of freedom in the position and shape of the terminals and enables miniaturization of a semiconductor device. [Means for solving the problem]

[0006] The semiconductor device according to the present disclosure comprises a semiconductor element, a substrate having one surface on which the semiconductor element is mounted, a conductor plate electrically connected to the semiconductor element, a sealing material which seals the substrate, the semiconductor element, and the conductor plate so that the other surface of the substrate and one end of the conductor plate are exposed, a terminal having one end which is joined to the one end of the conductor plate outside the sealing material, and a housing which is fixed to the other end side of the terminal beyond the one end, and the terminal is positioned at a predetermined position on the housing. Effect of the Invention

[0007] According to the present disclosure, since the terminals are disposed outside the sealing material, the degree of freedom in the position and shape of the terminals can be increased, and the semiconductor device can be made smaller. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to a first embodiment. [Diagram 2] 2 is a top view showing a connection between a semiconductor element and a conductor plate included in the semiconductor device according to the first embodiment. FIG. [Diagram 3] FIG. 11 is a cross-sectional view of a semiconductor device according to a second embodiment. [Figure 4] FIG. 11 is a cross-sectional view of a semiconductor device according to a third embodiment. [Diagram 5] FIG. 11 is a cross-sectional view of a semiconductor device according to a fourth embodiment. [Figure 6] 13 is a perspective view for illustrating a connection between a housing and a control terminal included in a semiconductor device according to a fourth embodiment, and a joint between a conductive plate and the control terminal. FIG. [Figure 7] FIG. 13 is a cross-sectional view of a semiconductor device according to a fifth embodiment. [Figure 8] FIG. 13 is a cross-sectional view of a semiconductor device according to a sixth embodiment. [Figure 9] FIG. 13 is a cross-sectional view of a semiconductor device according to a seventh embodiment. [Figure 10] FIG. 13 is a block diagram showing a configuration of a power conversion system to which a power conversion device according to an eighth embodiment is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] <Embodiment 1> The first embodiment will be described below with reference to the drawings. Fig. 1 is a cross-sectional view of a semiconductor device 202 according to the first embodiment. Fig. 2 is a top view showing a connection between a semiconductor element 3 and a conductor plate 4 included in the semiconductor device 202 according to the first embodiment.

[0010] In FIG. 1, the X direction, the Y direction, and the Z direction are mutually orthogonal. The X direction, the Y direction, and the Z direction shown in the following figures are also mutually orthogonal. In the following, the direction including the X direction and the -X direction opposite to the X direction is also referred to as the "X-axis direction". In the following, the direction including the Y direction and the -Y direction opposite to the Y direction is also referred to as the "Y-axis direction". In the following, the direction including the Z direction and the -Z direction opposite to the Z direction is also referred to as the "Z-axis direction".

[0011] As shown in FIG. 1, the semiconductor device includes a cooler 1, an insulating substrate 2 as a substrate, a semiconductor element 3, conductive plates 4 and 5, a sealing material 6, a control terminal 7 and a main terminal 8 as terminals, and a housing 9.

[0012] The insulating substrate 2 includes an insulating layer 2a, a circuit pattern 2b, and a conductor foil 2c. The insulating layer 2a is made of resin or ceramic. The circuit pattern 2b is bonded to the upper surface (surface in the Z direction) of the insulating layer 2a. Furthermore, the conductor foil 2c is bonded to the lower surface (surface in the -Z direction) of the insulating layer 2a. The circuit pattern 2b and the conductor foil 2c are made of copper, which has a low conductor resistance.

[0013] The semiconductor element 3 is mounted on the upper surface (the surface in the Z direction) of the circuit pattern 2b via a bonding material 10. Although two semiconductor elements 3 are shown in Fig. 1, the number is not limited to two and may be one or three or more.

[0014] The semiconductor element 3 is, for example, an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field effect transistor (MOSFET). The semiconductor element 3 may also be a reverse conducting IGBT (RC-IGBT). The semiconductor element 3 is made of silicon (Si) or a wide band gap semiconductor material. The wide band gap semiconductor material is silicon carbide (SiC), gallium nitride (GaN), diamond (C), or the like.

[0015] As shown in Fig. 1 and Fig. 2, the conductor plate 4 extends in the X-axis direction and is connected to the gate pad 3a of the semiconductor element 3 via a wiring 11. The conductor plate 5 extends in the X-axis direction and is bonded to the upper electrode of the semiconductor element 3 with a bonding material 10. The conductor plates 4 and 5 are made of copper. The surfaces of the conductor plates 4 and 5 may be plated with Ni, Sn, or the like. The wiring 11 is formed by aluminum wire bonding.

[0016] 1, the sealing material 6 seals the insulating substrate 2, the semiconductor element 3, and the conductor plates 4 and 5 so that the other side, that is, the lower surface (-Z direction surface) of the insulating substrate 2, one end (-X direction end) of the conductor plate 4, and one end (X direction end) of the conductor plate 5 are exposed. The sealing material 6 is a thermosetting resin such as epoxy resin.

[0017] The housing 9 is formed in a plate shape from a resin such as PPS (Poly Phenylene Sulfide) or PET (Polyethylene Terephthalate), and is fixed to the upper surface of the sealing material 6 so as to cover the upper surface (surface in the Z direction) of the sealing material 6. An end portion of the housing 9 on the sealing material 6 side (-Z direction), i.e., the lower end portion of the housing 9, is provided with a recess 12 that fits with an end portion of the sealing material 6 on the housing 9 side (Z direction), i.e., the upper end portion of the sealing material 6. The recess 12 is formed so as to be recessed upward (Z direction). The recess 12 of the housing 9 fits with the upper end portion of the sealing material 6, whereby the housing 9 is fixed to the sealing material 6.

[0018] The control terminal 7 is formed into an L-shape in a cross-sectional view. One end of the control terminal 7 extends in the -X direction, and the other end extends in the Z direction via a bent portion. One end of the control terminal 7 is joined to one end of the conductive plate 4 outside the sealing material 6. The other end side of the one end of the control terminal 7 is fixed to the housing 9, and the other end of the control terminal 7 protrudes upward (in the Z direction) from the housing 9.

[0019] The main terminal 8 is formed in a Z-shape in cross section. One end of the main terminal 8 extends in the X direction, and the other end extends in the X direction after passing through two bent portions. One end of the main terminal 8 is joined to one end of the conductor plate 5 outside the sealing material 6. The other end side of the one end of the main terminal 8 is fixed to the housing 9, and the other end of the main terminal 8 protrudes from the housing 9 in the X direction.

[0020] The control terminal 7 and the main terminal 8 are fixed to the housing 9 by being insert-molded into the housing 9. The control terminal 7 and the main terminal 8 are made of copper. The surfaces of the control terminal 7 and the main terminal 8 may be plated with Ni, Sn, or the like.

[0021] The conductor plate 4 connected to the control terminal 7 corresponds to a first conductor plate used for controlling the semiconductor element 3. The conductor plate 5 connected to the main terminal 8 corresponds to a second conductor plate used for purposes other than controlling the semiconductor element 3.

[0022] The cooler 1 is bonded to the other surface of the insulating substrate 2, i.e., the lower surface (the surface in the -Z direction) of the conductor foil 2c, via a bonding material 10. The cooler 1 is made of a metal such as aluminum or copper. The bonding materials 10 that bond the cooler 1 to the insulating substrate 2, the insulating substrate 2 to the semiconductor element 3, and the semiconductor element 3 to the conductor plate 5 are solder, silver, or the like.

[0023] Next, a manufacturing method of the semiconductor device 202 will be briefly described. First, the insulating substrate 2, the semiconductor element 3, and the conductive plates 4 and 5 are sealed with the sealing material 6 by transfer molding using a conventional mold. Next, the control terminal 7 and the main terminal 8 are insert-molded into the housing 9 and fixed therein. Next, the recess 12 of the housing 9 is fitted into the upper end of the sealing material 6, and then the conductive plate 4 and the control terminal 7 are joined, and the conductive plate 5 and the main terminal 8 are joined. Finally, the insulating substrate 2 and the cooler 1 are joined.

[0024] The conductive plate 4 and the control terminal 7, and the conductive plate 5 and the main terminal 8 are joined by laser welding or a soldering iron. By adopting a structure in which these joints are performed outside the sealing material 6, the degree of freedom in the positions and shapes of the control terminal 7 and the main terminal 8 is improved, and the semiconductor device 202 can be made smaller.

[0025] Here, in order to achieve further miniaturization of the semiconductor device 202, it is important not to seal the periphery of the joint between the conductor plate 4 and the control terminal 7 and the periphery of the joint between the conductor plate 5 and the main terminal 8. This is because, when a sealant is filled into the case as in the technology described in Patent Document 1, structural restrictions are imposed on the position and shape of the terminals in the semiconductor device, which becomes an obstacle to miniaturization of the semiconductor device.

[0026] Furthermore, if a sufficient flow path for the sealing material is not secured within the case, air bubbles will form in the sealing material after molding, and partial discharges will occur inside the bubbles due to the electric field when the semiconductor device is in operation. These partial discharges will impair the insulating properties of the sealing material and cause a short circuit between different potentials, which may lead to malfunction.

[0027] In order to solve such problems, the control terminals 7 and main terminals 8, which are used in the semiconductor device 202 with a large number of components and for which it is difficult to ensure an insulation distance, are fixed to the housing 9 in a state in which they are positioned in a predetermined position, thereby covering the control terminals 7 and main terminals 8 with the housing 9 and ensuring the positional accuracy of the control terminals 7 and main terminals 8. This makes it possible to guarantee the insulation distance between the control terminals 7 and the main terminals 8.

[0028] The housing 9 not only ensures the positional accuracy and insulation distance between the control terminals 7 and the main terminals 8, but also helps to fix the control terminals 7 and the main terminals 8. When a laser is used to join the conductor plate 4 and the control terminals 7 and the conductor plate 5 and the main terminals 8, if a joining process is performed with a clearance between the conductor plate 4 and the control terminals 7 and between the conductor plate 5 and the main terminals 8, the joining quality will be impaired. However, because the control terminals 7 and the main terminals 8 are fixed to the housing 9, it is possible to eliminate the clearance between the conductor plate 4 and the control terminals 7 and between the conductor plate 5 and the main terminals 8, and therefore the joining quality is maintained.

[0029] In the first embodiment, the control terminal 7 and the main terminal 8 are fixed to the housing 9 one by one, but a plurality of control terminals 7 and a plurality of main terminals 8 may be fixed to the housing 9. In the first embodiment, the control terminal 7 and the main terminal 8 have different shapes, but some of the control terminals 7 may have different shapes from the remaining control terminals 7. This also applies to the main terminals 8. Since a large current does not flow through the control terminal 7 for controlling the semiconductor element 3, the conductor plate 4 connected to the control terminal 7 may be thinner than the control terminal 7. The joint area between the control terminal 7 and the conductor plate 4 may be different from the joint area between the main terminal 8 and the conductor plate 5, and the joint area between some of the control terminals 7 and the conductor plate 4 may be different from the joint area between the remaining control terminals 7 and the conductor plate 4. This also applies to the main terminals 8. These all improve the degree of freedom in the position and shape of the control terminals 7 and the main terminals 8, thereby contributing to the miniaturization of the semiconductor device 202.

[0030] <Effects> As described above, in the first embodiment, the semiconductor device 202 includes the semiconductor element 3, the insulating substrate 2 having the semiconductor element 3 mounted on one surface thereof, the conductor plates 4, 5 electrically connected to the semiconductor element 3, the sealant 6 that seals the insulating substrate 2, the semiconductor element 3, and the conductor plates 4, 5 so that the other surface of the insulating substrate 2 and one ends of the conductor plates 4, 5 are exposed, the control terminal 7 and the main terminal 8 having one end joined to one end of the conductor plates 4, 5 outside the sealant 6, and the housing 9 that is fixed to the other end side of the one ends of the control terminal 7 and the main terminal 8. The control terminal 7 and the main terminal 8 are positioned at predetermined positions in the housing 9.

[0031] Therefore, since the control terminal 7 and the main terminal 8 are disposed outside the sealing material 6, the degree of freedom in the positions and shapes of the control terminal 7 and the main terminal 8 can be increased, and the semiconductor device 202 can be made smaller.

[0032] Furthermore, since the positions of the control terminal 7 and the main terminal 8 are fixed by the housing 9, the positional accuracy of the control terminal 7 and the main terminal 8 is improved. When the semiconductor device 202 is joined to a power conversion device, the reliability of the joint is improved.

[0033] Moreover, the semiconductor device 202 has a plurality of terminals, and the plurality of terminals, that is, the control terminal 7 and the main terminal 8, are fixed to the housing 9 in a state spaced apart from each other. This makes it easier to determine the positional relationship between the control terminal 7 and the main terminal 8, and thus makes it easier to miniaturize the semiconductor device 202.

[0034] In addition, the joints between the control terminal 7 and the main terminal 8 and the conductor plates 4, 5 are exposed from the sealing material 6 without being sealed by the sealing material 6. Therefore, it is possible to ensure an insulation distance between the control terminal 7 and the main terminal 8, which are used in the semiconductor device 202 in a large number of parts and for which it is difficult to ensure an insulation distance. In the semiconductor device 202, since the insulation distance is not ensured by using a sealing material as in the technology described in Patent Document 1, there are no structural restrictions on the position and shape of the terminals in the semiconductor device 202. As a result, it is possible to realize a miniaturized semiconductor device 202.

[0035] Moreover, the semiconductor device 202 includes a plurality of conductor plates 4, 5, which include a conductor plate 4 used for controlling the semiconductor element 3 and a conductor plate 5 used for purposes other than controlling the semiconductor element 3. Therefore, an insulation distance can be ensured between the control terminal 7 and the main terminal 8 through which a large current flows.

[0036] Moreover, the conductive plate 4 is thinner than the control terminal 7 connected to the conductive plate 4. Since a large current does not flow through the control terminal 7, the semiconductor device 202 can be made smaller by reducing the thickness of the conductive plate 4 connected to the control terminal 7.

[0037] In addition, a recess 12 is provided at the end of the housing 9 facing the sealing material 6, which fits into the end of the sealing material 6 facing the housing 9, and the housing 9 is fixed to the sealing material 6 by the recess 12 of the housing 9 fitting into the end of the sealing material 6 facing the housing 9.

[0038] This improves the positional accuracy of the sealing material 6, the control terminal 7, and the main terminal 8, thereby realizing miniaturization of the semiconductor device 202. Furthermore, since the positional accuracy of the sealing material 6, the conductor plate 4, and the control terminal 7, and the positional accuracy of the sealing material 6, the conductor plate 5, and the main terminal 8 are stabilized, it becomes easier to stably join the conductor plate 4 and the control terminal 7, and the conductor plate 5 and the main terminal 8, leading to improved reliability of the joints.

[0039] Furthermore, since the control terminal 7 and the main terminal 8 are insert molded into the housing 9, the control terminal 7 and the main terminal 8 are firmly fixed to the housing 9 and the positions of the control terminal 7 and the main terminal 8 are easily determined, making it easy to miniaturize the semiconductor device 202.

[0040] In addition, Ni or Sn plating is formed on the surfaces of the control terminal 7 and the main terminal 8. If the control terminal 7 and the main terminal 8 are made of copper, the surfaces will oxidize if there is no plating on the surfaces, weakening the adhesion of the joints between the conductor plate 4 and the control terminal 7 and between the conductor plate 5 and the main terminal 8, and requiring a large joint area. Plating makes it possible to maintain joint quality without having to secure a large area, which makes it easier to achieve the effect of miniaturizing the semiconductor device 202.

[0041] Furthermore, the semiconductor device 202 includes a plurality of terminals 7 and 8, some of which have different shapes from the remaining terminals. Furthermore, some of which have different thicknesses from the remaining terminals. This increases the degree of freedom in the shapes of the control terminals 7 and the main terminals 8, making it easier to miniaturize the semiconductor device 202.

[0042] Furthermore, the semiconductor device 202 includes a plurality of terminals 7, 8, and the bonding area between some of the plurality of terminals 7, 8 and the conductive plates 4, 5 is different from the bonding area between the remaining terminals and the conductive plates 4, 5, respectively.

[0043] Therefore, by achieving both good adhesion and an appropriate size of bonding area for terminals of various shapes, it is easy to achieve miniaturization of the semiconductor device 202. In addition, when bonding the conductor plate 4 and the control terminal 7, and the conductor plate 5 and the main terminal 8, the reliability of the bonding points can be ensured by setting bonding processing conditions suitable for the shapes of the control terminal 7 and the main terminal 8.

[0044] In addition, the control terminal 7 and the conductor plate 4, and the main terminal 8 and the conductor plate 5 are joined by laser welding, and therefore no additional parts are required, unlike in the case of screw fastening, which makes it easier to realize a miniaturized semiconductor device 202. In particular, this leads to a reduction in the height of the semiconductor device 202.

[0045] Furthermore, since the semiconductor element 3 is a reverse conducting IGBT, the number of semiconductor elements 3 can be reduced, and the semiconductor device 202 can be further miniaturized.

[0046] Furthermore, since the semiconductor material of the semiconductor element 3 is SiC, the use of low-loss SiC allows the semiconductor device 202 to be miniaturized and highly dense.

[0047] <Embodiment 2> Next, a semiconductor device 202A according to embodiment 2 will be described. Fig. 3 is a cross-sectional view of the semiconductor device 202A according to embodiment 2. Note that in embodiment 2, the same components as those described in embodiment 1 are denoted by the same reference numerals and the description thereof will be omitted.

[0048] 3, in the second embodiment, an indentation 14 recessed downward (in the -Z direction) is provided at the end of the sealing material 6 on the housing 9 side, i.e., the upper end (end in the Z direction) of the sealing material 6. Moreover, a protrusion 13 protruding downward (in the -Z direction) is provided at the end of the sealing material 6 on the housing 9 side, i.e., the lower end (end in the -Z direction) of the housing 9, instead of the recess 12. The protrusion 13 of the housing 9 fits into the indentation 14 of the sealing material 6, whereby the housing 9 is fixed to the sealing material 6.

[0049] Additionally, the end of the housing 9 in the X direction is bent downward (-Z direction). The main terminal 8 is formed in a flat plate shape and extends in the X-axis direction. One end of the main terminal 8 is joined to one end of the conductor plate 5 outside the sealing material 6. The other end side of the one end of the main terminal 8 is fixed to the housing 9, and the other end of the main terminal 8 protrudes from the housing 9 in the X direction.

[0050] <Effects> As described above, in embodiment 2, a recess 14 is provided at the end of the sealing material 6 facing the housing 9, and a protrusion 13 that fits into the recess 14 is provided at the end of the housing 9 facing the sealing material 6, and the protrusion 13 of the housing 9 fits into the recess 14 of the sealing material 6, thereby fixing the housing 9 to the sealing material 6.

[0051] Therefore, the housing 9 for fixing the control terminals 7 and the main terminals 8 can be easily positioned by the sealing material 6, improving the positional accuracy of the control terminals 7 and the main terminals 8, and making it easier to realize a miniaturized semiconductor device 202.

[0052] <Embodiment 3> Next, a semiconductor device 202B according to an embodiment 3 will be described. Fig. 4 is a cross-sectional view of the semiconductor device 202B according to the embodiment 3. Note that in the embodiment 3, the same components as those described in the embodiments 1 and 2 are denoted by the same reference numerals and the description thereof will be omitted.

[0053] As shown in FIG. 4, in the third embodiment, instead of the housing 9 in the second embodiment, housings 9A and 9B are provided. The housing 9A has a vertical portion extending in the Z direction and a horizontal portion extending in the X direction, and is formed in an L-shape in cross section. The housing 9A is disposed so as to cover the side surface of the sealing material 6 in the -X direction. The housing 9B extends in the Z direction and is disposed so as to cover the side surface of the sealing material 6 in the X direction. Although not shown, the housings 9A and 9B may be integrally formed as one housing so as to cover the upper surface (the surface in the Z direction) of the sealing material 6 in addition to the side surface of the sealing material 6 in the X axis direction.

[0054] The cooler 1 is formed to have a main surface larger than the area surrounded by the housings 9A, 9B when viewed from the Z direction so that the housings 9A, 9B can be fixed. The lower ends of the housings 9A, 9B are fixed to the cooler 1 by fitting or bonding. In addition, screw holes 1a for fixing the cooler 1 to the power conversion device are provided in the cooler 1 at locations on the outer side of the housing 9A (-X direction) and on the outer side of the housing 9B (X direction).

[0055] <Effects> As described above, in the third embodiment, the semiconductor device 202B further includes the cooler 1 joined to the other surface of the insulating substrate 2, and the casings 9A, 9B and the cooler 1 are fixed by fitting or bonding. Therefore, the casing 9A for fixing the control terminal 7 and the casing 9B for fixing the main terminal 8 are positioned by the cooler 1, so that the positional accuracy of the control terminal 7 and the main terminal 8 is improved, and it is easy to realize a miniaturization of the semiconductor device 202.

[0056] <Fourth embodiment> Next, a semiconductor device 202C according to a fourth embodiment will be described. Fig. 5 is a cross-sectional view of the semiconductor device 202C according to the fourth embodiment. Fig. 6 is a perspective view for explaining the connection between the housing 9 and the control terminal 7 provided in the semiconductor device 202C according to the fourth embodiment, and the bonding between the conductive plate 4 and the control terminal 7. Note that in the fourth embodiment, the same components as those explained in the first to third embodiments are given the same reference numerals, and the explanation thereof will be omitted.

[0057] As shown in Figures 5 and 6, in embodiment 4, unlike embodiment 2, protrusions 13 and recesses 14 are not provided, and the control terminal 7 and main terminal 8 are outsert molded into the housing 9, and the control terminal 7 is joined to the conductive plate 4, and the main terminal 8 is joined to the conductive plate 5, thereby fixing the housing 9 and the sealing material 6.

[0058] Specifically, as shown in Fig. 6, the other end side of the control terminal 7 extends in a direction perpendicular to the joint surface between one end of the control terminal 7 and the conductive plate 4 (Z-axis direction). A fitting groove 9a into which the bent portion of the control terminal 7 is fitted is formed at the end of the housing 9 in the -X direction, and the control terminal 7 is fixed to the housing 9 by fitting the control terminal 7 into the fitting groove 9a. Although not shown, a fitting groove into which the other end side of the main terminal 8 is fitted is formed at the end of the housing 9 in the X direction, and the main terminal 8 is fixed to the housing 9 by fitting the main terminal 8 into the fitting groove. Note that the control terminals 7, 7A and the main terminals 8, 8A of other embodiments may also be outsert molded into the housing 9.

[0059] <Effects> As described above, in the fourth embodiment, the other end side of the control terminal 7 extends perpendicular to the joint surface between one end of the control terminal 7 and the conductive plate 4, and the control terminal 7 is outsert molded into the housing 9.

[0060] Therefore, while maintaining the positional freedom of the control terminal 7 in the Z-axis direction, it is possible to eliminate a gap between the control terminal 7 and the conductor plate 4 in the Z-axis direction during the joining process between the control terminal 7 and the conductor plate 4. This improves the reliability of the joint between the control terminal 7 and the conductor plate 4. Generally, the control terminal 7 electrically connected to the control unit of the semiconductor element 3 via the wiring 11 and the conductor plate 4 requires higher positional accuracy in the X-axis and Y-axis directions than accuracy in the Z-axis direction, so it is possible to achieve both reliability and positional accuracy in the control terminal 7.

[0061] In addition, the control terminal 7 has an L-shape, and the housing 9 is provided with a fitting groove 9a into which the bent portion of the control terminal 7 fits, and the control terminal 7 is fixed to the housing 9 by fitting the bent portion of the control terminal 7 into the fitting groove 9a of the housing 9.

[0062] Therefore, the positional accuracy of the control terminal 7 in the X-axis and Y-axis directions is improved, which leads to a reduction in the size of the semiconductor device 202C.

[0063] <Embodiment 5> Next, a semiconductor device 202D according to an embodiment 5 will be described. Fig. 7 is a cross-sectional view of the semiconductor device 202D according to the embodiment 5. Note that in the embodiment 5, the same components as those described in the embodiments 1 to 4 are denoted by the same reference numerals and the description thereof will be omitted.

[0064] 7, in the fifth embodiment, two notches 15 are provided at the end of the sealing material 6 on the housing 9 side, i.e., the upper part (Z direction portion) of the sealing material 6, in comparison with the fourth embodiment. The two notches 15 are provided at the end of the sealing material 6 in the -X direction and the end in the X direction. One end of the control terminal 7 is located in one of the notches 15, and one end of the main terminal 8 is located in the other notch 15. The sealing material 6 in the other embodiments may also have notches 15.

[0065] <Effects> As described above, in the fifth embodiment, the sealing material 6 has a cutout 15 at its end on the housing 9 side, and one end of the control terminal 7 and the main terminal 8 are positioned in the cutout 15.

[0066] Therefore, the control terminal 7 and the main terminal 8 can be disposed inside the outer periphery of the rectangular parallelepiped shape of the sealing material 6, which leads to a miniaturization of the semiconductor device 202D. Also, it becomes easier to ensure an insulation distance between the control terminal 7 and the main terminal 8 and the cooler 1, which leads to a further miniaturization of the semiconductor device 202D.

[0067] <Sixth embodiment> Next, a semiconductor device 202E according to a sixth embodiment will be described. Fig. 8 is a cross-sectional view of the semiconductor device 202E according to the sixth embodiment. Note that in the sixth embodiment, the same components as those described in the first to fifth embodiments are denoted by the same reference numerals, and the description thereof will be omitted.

[0068] As shown in FIG. 8, in the sixth embodiment, a groove 16 is provided in a portion of the sealing material 6 between the conductive plates 4, 5 and the cooler 1, unlike the third embodiment. Specifically, one groove 16 is provided in a side portion of the sealing material 6 between the conductive plates 4 and the cooler 1, and one groove is provided in a bottom portion of the sealing material 6 between the conductive plates 5 and the cooler 1. These two grooves 16 are provided to ensure an insulation distance between the conductive plates 4, 5 and the cooler 1. The groove 16 may also be provided in the sealing material 6 of the other embodiments. Also, similar to the case of FIG. 4, the housings 9A and 9B may be integrally formed as one housing so as to cover the upper surface (surface in the Z direction) of the sealing material 6 in addition to the side surface of the sealing material 6 in the X-axis direction.

[0069] <Effects> As described above, in the sixth embodiment, the groove 16 is provided in the sealing material 6 in a portion between the conductive plates 4, 5 and the cooler 1. When the rated voltage of the semiconductor device 202E is high, an insulation distance is required between the conductive plates 4, 5 and the cooler 1, but in the sixth embodiment, it is possible to ensure the insulation distance between the conductive plates 4, 5 and the cooler 1. This makes it possible to suppress discharge without increasing the size of the semiconductor device 202E.

[0070] <Embodiment 7> Next, a semiconductor device 202F according to an embodiment 7 will be described. Fig. 9 is a cross-sectional view of the semiconductor device 202F according to the embodiment 7. Note that in the embodiment 7, the same components as those described in the embodiments 1 to 6 are denoted by the same reference numerals and the description thereof will be omitted.

[0071] 9, in the seventh embodiment, instead of the control terminal 7 and the main terminal 8 of the first embodiment, a control terminal 7A and a main terminal 7B having a press-fit shape are provided. Note that a terminal not having a press-fit shape may be adopted for one of the control terminal 7A and the main terminal 7B. Also, instead of the control terminal 7 and the main terminal 8 of the second to sixth embodiments, a control terminal 7A and a main terminal 7B having a press-fit shape may be adopted.

[0072] <Effects> As described above, in the seventh embodiment, the control terminal 7 and the main terminal 8 have a press-fit shape, so that when the semiconductor device 202F is incorporated into the power converter, the control terminal 7A and the main terminal 7B can be easily electrically connected, improving the assembly of the power converter, which leads to a reduction in the size of the power converter.

[0073] <Embodiment 8> In this embodiment, the semiconductor device according to the above-mentioned embodiments 1 to 7 is applied to a power conversion device. Although the application of the semiconductor device according to the embodiments 1 to 7 is not limited to a specific power conversion device, the case where the semiconductor device according to the embodiments 1 to 7 is applied to a three-phase inverter will be described below as embodiment 8.

[0074] FIG. 10 is a block diagram showing a configuration of a power conversion system to which a power conversion device according to the eighth embodiment is applied. As shown in FIG.

[0075] The power conversion system shown in Fig. 10 is composed of a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power conversion device 200. The power source 100 can be composed of various things, for example, a DC system, a solar cell, or a storage battery, or it may be composed of a rectifier circuit connected to an AC system or an AC / DC converter. The power source 100 may also be composed of a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0076] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. As shown in Fig. 10, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0077] The load 300 is a three-phase motor driven by AC power supplied from the power conversion device 200. The load 300 is not limited to a specific use, but is a motor mounted on various electric devices, and is used as, for example, a motor for a hybrid car, an electric car, a railroad car, an elevator, or an air conditioner.

[0078] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown), and converts DC power supplied from the power source 100 into AC power by switching the switching element, and supplies the AC power to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to this embodiment is a two-level three-phase full bridge circuit, and can be configured from six switching elements and six freewheeling diodes connected in inverse parallel to each switching element.

[0079] At least one of the switching elements and free wheel diodes of the main conversion circuit 201 is configured by a semiconductor device corresponding to any one of the above-mentioned embodiments 1 to 7. In embodiment 8, as an example, the main conversion circuit 201 includes the semiconductor device 202 according to embodiment 1. The six switching elements are connected in series in pairs to configure upper and lower arms, and each upper and lower arm configures each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0080] The main conversion circuit 201 also includes a drive circuit (not shown) for driving each switching element, but the drive circuit may be built in the semiconductor device 202, or the semiconductor device 202 may include a drive circuit separately. The drive circuit generates drive signals for driving the switching elements of the main conversion circuit 201 and supplies them to the control electrodes of the switching elements of the main conversion circuit 201. Specifically, in accordance with a control signal from a control circuit 203 (described later), the drive circuit outputs to the control electrodes of each switching element a drive signal for turning the switching element on and a drive signal for turning the switching element off. When maintaining a switching element in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when maintaining a switching element in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element.

[0081] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that a desired power is supplied to the load 300. Specifically, the control circuit 203 calculates the time (on time) for each switching element of the main conversion circuit 201 to be in the on state based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on time of the switching elements according to the voltage to be output. Then, a control command (control signal) is output to a drive circuit provided in the main conversion circuit 201 so that an on signal is output to a switching element that should be in the on state at each time point, and an off signal is output to a switching element that should be in the off state. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

[0082] In the power conversion device according to the present embodiment, the semiconductor device 202 is used as the switching element and the free wheel diode of the main conversion circuit 201, so that miniaturization can be realized.

[0083] In the present embodiment, an example in which the semiconductor device according to the first to seventh embodiments is applied to a two-level three-phase inverter has been described, but the application of the semiconductor device according to the first to seventh embodiments is not limited to this, and the semiconductor device according to the first to seventh embodiments can be applied to various power conversion devices. In the present embodiment, the two-level power conversion device is described, but the semiconductor device according to the first to seventh embodiments can be applied to a three-level or multi-level power conversion device, and when power is supplied to a single-phase load, the semiconductor device according to the first to seventh embodiments can be applied to a single-phase inverter. Also, when power is supplied to a DC load or the like, the semiconductor device according to the first to seventh embodiments can be applied to a DC / DC converter or an AC / DC converter.

[0084] Furthermore, the power conversion device to which the semiconductor device according to any one of the first to seventh embodiments is applied is not limited to the case where the load described above is an electric motor, but can also be used, for example, as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, or the like.

[0085] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0086] Various aspects of the present disclosure are summarized below as appendices.

[0087] (Appendix 1) A semiconductor element; a substrate on one surface of which the semiconductor element is mounted; a conductor plate electrically connected to the semiconductor element; a sealing material that seals the substrate, the semiconductor element, and the conductor plate so that the other surface of the substrate and one end of the conductor plate are exposed; a terminal having one end joined to the one end of the conductive plate outside the sealing material; a housing fixed to the other end side of the terminal from the one end, The terminal is positioned at a predetermined position on the housing.

[0088] (Appendix 2) A plurality of the terminals are provided, 2. The semiconductor device according to claim 1, wherein the terminals are fixed to the housing while being spaced apart from each other.

[0089] (Appendix 3) 3. The semiconductor device according to claim 1, wherein a joint between the terminal and the conductive plate is not sealed by the sealing material and is exposed from the sealing material.

[0090] (Appendix 4) A plurality of the conductive plates are provided, 4. The semiconductor device according to claim 1, wherein the plurality of conductor plates include a first conductor plate used for controlling the semiconductor element and a second conductor plate used for purposes other than controlling the semiconductor element.

[0091] (Appendix 5) 5. The semiconductor device according to claim 4, wherein the first conductive plate is thinner than the terminal connected to the first conductive plate.

[0092] (Appendix 6) a recess that fits into an end of the sealing material on the housing side is provided at an end of the sealing material on the housing side, The semiconductor device according to any one of claims 1 to 5, wherein the recess of the case is fitted onto an end of the sealant on the case side, thereby fixing the case to the sealant.

[0093] (Appendix 7) A recess is provided at an end of the sealing material on the housing side, a protrusion that fits into the recess is provided on an end of the housing on the sealing material side, The semiconductor device according to any one of claims 1 to 5, wherein the protrusion of the case is fitted into the recess of the sealing material, thereby fixing the case to the sealing material.

[0094] (Appendix 8) a cooler joined to the other surface of the substrate, 8. The semiconductor device according to claim 1, wherein the housing and the cooler are fixed by fitting or bonding.

[0095] (Appendix 9) the other end of the terminal extends in a direction perpendicular to a joint surface between the one end of the terminal and the conductive plate, 9. The semiconductor device according to claim 1, wherein the terminal is outsert molded into the housing.

[0096] (Appendix 10) The terminal has an L-shape, The housing is provided with a fitting groove into which the bent portion of the terminal is fitted, 10. The semiconductor device according to claim 9, wherein the terminal is fixed to the housing by fitting the bent portion of the terminal into the fitting groove of the housing.

[0097] (Appendix 11) 9. The semiconductor device according to claim 1, wherein the terminal is insert-molded into the housing.

[0098] (Appendix 12) A notch is provided at an end of the sealing material on the housing side, 12. The semiconductor device according to claim 1, wherein the one end of the terminal is located in the notch.

[0099] (Appendix 13) 9. The semiconductor device according to claim 8, wherein a groove is provided in a portion of the sealing material between the conductive plate and the cooler.

[0100] (Appendix 14) 14. The semiconductor device according to claim 1, wherein the terminal has a press-fit shape.

[0101] (Appendix 15) 15. The semiconductor device according to claim 1, wherein a surface of the terminal is plated with Ni or Sn.

[0102] (Appendix 16) A plurality of the terminals are provided, 16. The semiconductor device according to claim 1, wherein some of the plurality of terminals have a different shape from the remaining terminals.

[0103] (Appendix 17) A plurality of the terminals are provided, 17. The semiconductor device according to claim 1, wherein some of the plurality of terminals have a different thickness from the remaining terminals.

[0104] (Appendix 18) A plurality of the terminals are provided, 18. The semiconductor device according to claim 1, wherein the bonding area between some of the plurality of terminals and the conductive plate is different from the bonding area between the remaining terminals and the conductive plate.

[0105] (Appendix 19) 19. The semiconductor device according to claim 1, wherein the terminal and the conductive plate are joined by laser welding.

[0106] (Appendix 20) 19. The semiconductor device according to claim 1, wherein the semiconductor element is a reverse conducting IGBT.

[0107] (Appendix 21) 21. The semiconductor device according to claim 1, wherein a semiconductor material of the semiconductor element is SiC.

[0108] (Appendix 22) A main conversion circuit having the semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 21, which converts input power and outputs the power; a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit; A power conversion device comprising: [Explanation of symbols]

[0109] 1 cooler, 2 insulating substrate, 4, 5 conductive plate, 6 sealing material, 7, 7A control terminal, 8, 8A main terminal, 9, 9A, 9B housing, 9a fitting groove, 12 recess, 13 protrusion, 14 depression, 15 notch, 16 groove, 200 power conversion device, 201 main conversion circuit, 202, 202A, 202B, 202C, 202D, 202E, 202F semiconductor device, 203 control circuit.

Claims

1. A semiconductor element; a substrate on one surface of which the semiconductor element is mounted; a conductor plate electrically connected to the semiconductor element; a sealing material that seals the substrate, the semiconductor element, and the conductor plate so that the other surface of the substrate and one end of the conductor plate are exposed; a terminal having one end joined to the one end of the conductive plate outside the sealing material; a housing fixed to the other end side of the terminal from the one end, The terminal is positioned at a predetermined position on the housing.

2. A plurality of the terminals are provided, The semiconductor device according to claim 1 , wherein the plurality of terminals are fixed to the housing in a state spaced apart from one another.

3. 2. The semiconductor device according to claim 1, wherein a joint between said terminal and said conductive plate is not sealed by said sealing material and is exposed from said sealing material.

4. A plurality of the conductive plates are provided, 2. The semiconductor device according to claim 1, wherein said plurality of conductive plates include a first conductive plate used for controlling said semiconductor element, and a second conductive plate used for a purpose other than controlling said semiconductor element.

5. The semiconductor device according to claim 4 , wherein said first conductive plate is thinner than said terminal connected to said first conductive plate.

6. a recess that fits into an end of the sealing material on the housing side is provided at an end of the sealing material on the housing side, The semiconductor device according to claim 1 , wherein the recess of the housing is fitted onto an end of the sealing material on the housing side, thereby fixing the housing to the sealing material.

7. A recess is provided at an end of the sealing material on the housing side, a protrusion that fits into the recess is provided on an end of the housing on the sealing material side, The semiconductor device according to claim 1 , wherein the projection of the case is fitted into the recess of the sealing material, thereby fixing the case to the sealing material.

8. a cooler joined to the other surface of the substrate, The semiconductor device according to claim 1 , wherein the housing and the cooler are fixed to each other by fitting or bonding.

9. the other end of the terminal extends in a direction perpendicular to a joint surface between the one end of the terminal and the conductive plate, The semiconductor device according to claim 1 , wherein the terminals are outsert molded into the housing.

10. The terminal has an L-shape, The housing is provided with a fitting groove into which the bent portion of the terminal is fitted, The semiconductor device according to claim 9 , wherein the bent portion of the terminal is fitted into the fitting groove of the case, thereby fixing the terminal to the case.

11. The semiconductor device according to claim 1 , wherein the terminal is insert-molded into the housing.

12. A notch is provided at an end of the sealing material on the housing side, The semiconductor device according to claim 1 , wherein the one end of the terminal is located in the notch.

13. The semiconductor device according to claim 8 , wherein a groove is provided in a portion of said sealing material between said conductive plate and said cooler.

14. The semiconductor device according to claim 1 , wherein the terminal has a press-fit shape.

15. 2. The semiconductor device according to claim 1, wherein the terminals have surfaces plated with Ni or Sn.

16. A plurality of the terminals are provided, The semiconductor device according to claim 1 , wherein some of the plurality of terminals have a different shape from the remaining terminals.

17. A plurality of the terminals are provided, The semiconductor device according to claim 1 , wherein some of the plurality of terminals have a thickness different from the remaining terminals.

18. A plurality of the terminals are provided, 2. The semiconductor device according to claim 1, wherein a bonding area between some of said plurality of terminals and said conductive plate is different from a bonding area between the remaining terminals and said conductive plate.

19. The semiconductor device according to claim 1 , wherein the terminal and the conductive plate are joined by laser welding.

20. The semiconductor device according to claim 1 , wherein the semiconductor element is a reverse conducting IGBT.

21. The semiconductor device according to claim 1 , wherein the semiconductor material of the semiconductor element is SiC.

22. a main conversion circuit having the semiconductor device according to claim 1, which converts input power and outputs the converted power; a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit; A power conversion device comprising:

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