Radiation detector, radiation imaging system, and method for manufacturing radiation detector

Abstract

To provide a radiation detector which suppresses occurrence of crosstalk and secondary electrons by scattered radiation when passing through a semiconductor layer, and suppresses lowering of mechanical strength.SOLUTION: A radiation detector includes a detection substrate including a semiconductor layer and a resin layer, and a circuit board, wherein the detection substrate has a detection region where a detection element of radiation is provided in the semiconductor layer and a peripheral region provided outside the detection region, in at least a part of the peripheral region of the detection substrate, a second main surface opposite to a first main surface of the detection substrate where the radiation is incident is supported by the circuit board, the resin layer is provided in at least the detection region, in at least one of the first main surface and the second main surface of the detection substrate, and the thickness of the resin layer in the detection region is smaller than the thickness of the semiconductor layer in the detection region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a radiation detector, and the like. [Background technology]

[0002] There is known a radiation detector that obtains a radiation image by receiving radiation with a semiconductor element such as a CMOS image sensor without passing through a scintillator (wavelength converter). In such a radiation detector, if radiation penetrates deep into the semiconductor element, crosstalk and secondary electrons are generated, reducing the detection accuracy, so the semiconductor layer is thinned.

[0003] Patent Document 1 discloses a detector in which the thickness of a semiconductor layer in at least a part of a detection region is smaller than the thickness of a peripheral region. It describes that in the detection region of the semiconductor layer, a plurality of grooves are provided on the back surface opposite to the surface on which the energy beam is incident, to reduce crosstalk between pixels. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-87640 A Summary of the Invention [Problem to be solved by the invention]

[0005] Although the generation of crosstalk and secondary electrons can be reduced by thinning the semiconductor layer, the mechanical strength of the semiconductor layer is reduced. The semiconductor layer, which has low mechanical strength, may be damaged by external forces applied during the assembly process or transportation of the radiation detector. Thus, there has been a demand for a radiation detector that suppresses the generation of crosstalk and secondary electrons caused by radiation scattered while passing through the semiconductor layer, and also suppresses the decrease in mechanical strength. [Means for solving the problem]

[0006] One aspect of the present invention is a radiation detector comprising: a detection substrate including a semiconductor layer and a resin layer; and a circuit board, the detection substrate having a detection region in which radiation detection elements are provided in the semiconductor layer; and a peripheral region provided outside the detection region, wherein in at least a portion of the peripheral region of the detection substrate, the circuit board supports a second main surface opposite a first main surface of the detection substrate on which the radiation is incident, and the resin layer is provided at least in the detection region on at least one of the first main surface and the second main surface of the detection substrate, and a thickness of the resin layer in the detection region is smaller than a thickness of the semiconductor layer in the detection region.

[0007] Another aspect of the present invention is a method for manufacturing a radiation detector, comprising the steps of: preparing a semiconductor substrate having a radiation detection element provided in a detection region of a first main surface and terminals provided in a peripheral region of the first main surface; and a circuit board; forming a resin layer having a thickness smaller than the thickness of the semiconductor substrate in the detection region on at least one of the first main surface and a second main surface opposite the first main surface, at a position overlapping at least the detection region when viewed from a direction perpendicular to the first main surface; fixing the semiconductor substrate with the resin layer formed to the circuit board such that the second main surface is supported in the peripheral region; and electrically connecting the terminals and the circuit board with a connecting member. Effect of the Invention

[0008] According to the present invention, it is possible to provide a radiation detector in which crosstalk and secondary electrons caused by radiation scattered while passing through a semiconductor layer are suppressed, and a decrease in mechanical strength is suppressed. [Brief description of the drawings]

[0009] [Figure 1] 1A is a plan view of the radiation detector 500 according to the first embodiment, as viewed from the direction in which radiation is incident, and FIG. [Diagram 2] 1 is a schematic cross-sectional view of a radiation detector 500 according to a first embodiment in which a resin layer 170 is provided on the first main surface FS side. [Diagram 3] 1 is a schematic cross-sectional view of the radiation detector 500 according to the first embodiment in which the thickness of the resin layer 170 is different between the detection region PA and the peripheral region PB. [Figure 4] 13A is a plan view of a radiation detector 510 according to embodiment 2 as viewed from the direction in which radiation is incident, and FIG. [Diagram 5] 13A is a plan view of a radiation detector 520 according to embodiment 3, as viewed from the direction in which radiation is incident, and FIG. [Figure 6] FIG. 11 is a schematic diagram for explaining a radiation imaging system according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A radiation detector according to an embodiment of the present invention will be described with reference to the drawings. The embodiment described below is merely an example, and those skilled in the art can appropriately modify and implement the detailed configuration without departing from the spirit and scope of the present invention.

[0011] In the drawings referred to in the following description of the embodiments, elements denoted by the same reference numerals have the same functions unless otherwise noted. In the drawings, when a plurality of identical elements are arranged, the reference numerals and their explanations may be omitted. In addition, since the drawings may be expressed in a schematic manner for convenience of illustration and explanation, the shapes, sizes, arrangements, etc. of elements depicted in the drawings may not strictly correspond to the actual objects.

[0012] The radiation detected by the radiation detector according to the embodiment may be electromagnetic waves or particle rays. The electromagnetic waves may be light rays such as infrared rays, visible light rays, and ultraviolet rays, radio waves such as microwaves, and ionizing radiation such as X-rays and gamma rays. The particle rays may include alpha rays, beta rays, electron beams, neutron beams, proton beams, heavy ion beams, and meson beams. The structure of the radiation detector, for example, the thickness of a semiconductor layer that converts radiation into an electric signal, may be appropriately set according to the transmission characteristics and absorption characteristics of the radiation to be detected. In addition, in order to prevent the radiation from colliding with air and scattering, the radiation detector according to the embodiment shown below may be operated in a vacuum or a reduced pressure environment.

[0013] [Embodiment 1] (Configuration of Radiation Detector) Fig. 1(a) shows a plan view of a radiation detector 500 according to this embodiment as seen from the direction in which radiation is incident, and Fig. 1(b) shows a cross-sectional view taken along line CC in Fig. 1(a). The radiation detector 500 includes a detection substrate 100, a circuit substrate 200, and a connection member 300.

[0014] The detection substrate 100 has a detection area PA as a light receiving section, and a peripheral area PB provided outside the detection area PA. The detection substrate 100 includes a semiconductor layer 110 as a base material, a detection element 120, an insulating layer 130, a wiring layer 140, a sealing layer 150, and a resin layer 170, but may further include layers and functional elements other than these. In FIG. 1(a), the peripheral area PB is shown in a frame shape surrounding the detection area PA, but the shape of the peripheral area PB as the area excluding the detection area PA does not necessarily have to be a frame shape.

[0015] In the detection substrate 100, the principal surface on the side where radiation is incident is referred to as a first principal surface FS, and the principal surface on the opposite side is referred to as a second principal surface BS. In the following description, the case where the radiation detector 500 is seen through from a direction perpendicular to the principal surface of the detection substrate 100 (Z direction) is also referred to as a planar view for convenience.

[0016] The circuit board 200 is a board on which electric circuits are mounted to realize the functions described below. The circuit board 200 is configured to be able to realize functions such as supplying control signals and power to the radiation detection sensor provided on the detection board 100, processing signals output from the detection board 100, storing signals, transmitting signals to an external computer or network, etc. The base material of the circuit board 200 may be, for example, glass epoxy resin, paper epoxy resin, glass polyimide resin, ceramics, etc.

[0017] An opening H is provided in the circuit board 200, and the detection board 100 is mounted on the circuit board 200 such that the detection area PA of the detection board 100 is located within the opening H of the circuit board 200 when viewed in a plan view. The opening H is provided so that when radiation is irradiated to the detection area PA and passes through the detection board 100, the transmitted radiation is not reflected or scattered by the circuit board 200 and returns to the detection area PA of the detection board 100.

[0018] The connection member 300 is a member for electrically connecting the circuit board 200 and the detection board 100. Specifically, the terminal 210 provided on the circuit board 200 and the terminal 160 provided on the detection board 100 are connected by wire bonding using a wire such as gold or silver, so that various control signals, detected output signals, power supplies, etc. can be transmitted.

[0019] The detection substrate 100 will be described in more detail. The semiconductor layer 110, which is the base material of the detection substrate 100, is made of a single crystal layer or a polycrystalline layer of silicon or germanium. In the detection region PA of the detection substrate 100, the detection element 120, the insulating layer 130, the wiring layer 140, and the sealing layer 150 are arranged inside or on the semiconductor layer 110 on the first main surface FS side. In the peripheral region PB of the detection substrate 100, the terminal 160, the alignment mark (not shown), the peripheral circuit (not shown), and the like are arranged. The sealing layer 150 is an inorganic insulating film provided to suppress deterioration of the detection element 120 and the wiring layer 140 due to moisture and oxygen, and specifically, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, and the like can be used. The thickness of the sealing layer 150 is preferably 200 nm or more from the viewpoint of suppressing moisture and oxygen, and is preferably less than 1000 nm in consideration of the transmission of radiation to the detection element.

[0020] The detection area PA as a radiation receiving section is an area provided with a mechanism for converting electrons generated by the incidence of radiation into an output signal, and includes a plurality of detection elements 120 arranged in a matrix to form an image based on radiation, a readout circuit, and a wiring layer 140. The light receiving section can be said to be an area where radiation is incident, and also a detection section. Each of the plurality of pixels can include a photodiode, similar to a CMOS image sensor or a CCD. As the photodiode, a compound semiconductor such as CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride) may be used. In addition, the photon counting principle may be used, and a device such as a SPAD (single photon avaranche diode) may be used.

[0021] In the detection area PA, a circuit can be provided that transfers the electrons stored in the photodiode to the floating diffusion layer via a transfer transistor and reads out the potential via a source follower, as in a CMOS image sensor or a CCD. A circuit can also be provided that does not use a transfer transistor and directly sets the potential of the storage section to the gate potential of the source follower.

[0022] The peripheral area PB is provided with peripheral circuits such as a drive circuit, a control circuit, a signal processing circuit, and an output circuit, as well as terminals 160 for connection to an external power source, etc. The drive circuit is a circuit that scans and drives the readout circuit of each pixel in the detection area PA. The control circuit is a circuit that controls the drive timing of the drive circuit, the signal processing circuit, etc., and includes a timing generator, etc. The signal processing circuit processes the signal read out from the readout circuit in the detection area PA, and includes an amplifier circuit and an AD conversion circuit. The output circuit converts the signal obtained by the signal processing circuit into a predetermined format and outputs it, and includes a differential transmission circuit.

[0023] The semiconductor layer 110 may be a substrate with a uniform thickness as shown in FIG. 1(b), but may be configured so that the thickness of the detection area PA is smaller than the thickness of the peripheral area PB in order to suppress the generation of crosstalk and secondary electrons. In that case, a single substrate may be processed so that the thickness of the detection area PA is thin, or another substrate may be bonded to the peripheral area of ​​a thin substrate so that the thickness of the semiconductor layer in the peripheral area PB is large. After joining multiple substrates by a known method, a thinning process may be performed on the portion corresponding to the detection area PA. For example, when CdTe or CdZnTe is used as a photodiode, the signal readout circuit section may be composed of a separately prepared CMOS or the like, and the photodiode and the circuit section may be joined by solder or the like to create the detection substrate 100.

[0024] The thickness of the semiconductor layer 110 in the detection area PA is preferably 100 μm or less in consideration of suppressing crosstalk inside the semiconductor layer, while it is preferably 10 μm or more in consideration of improving the mechanical strength of the detection substrate 100. More preferably, the thickness of the semiconductor layer 110 is 25 μm or more and 75 μm or less.

[0025] In this embodiment, a resin layer 170 is provided on the second main surface BS side of the detection board 100. As described above, the opening H is provided in the circuit board 200 at a position corresponding to the detection area PA, and the portion of the resin layer 170 arranged in the detection area PA faces the space defined by the opening H. In addition, the portion of the resin layer 170 arranged in the peripheral area PB abuts against the circuit board 200.

[0026] In order to prevent radiation transmitted through the detection board 100 from being irradiated onto the circuit board 200, when the radiation detector 500 is viewed in plan, the opening end HE of the circuit board 200 is disposed at the boundary between the detection area PA and the peripheral area PB or on the outer side (on the peripheral area PB side) of the boundary. In addition, it is preferable that the opening end HE (edge ​​of the opening) of the circuit board 200 is disposed on the inner side (on the detection area PA side) of the end 160E of the terminal 160. In other words, it is preferable that the edge (opening end HE) of the opening of the circuit board 200 is closer to the detection area than the end (end 160E) of the terminal 160 that is closer to the detection area. By configuring the terminal 160 and the circuit board 200 to overlap in plan when the radiation detector 500 is viewed in plan, the detection board 100 is less likely to be damaged even if an external force is applied when connecting the connection member 300 to the terminal 160.

[0027] The resin layer 170 is a resin such as an acrylic resin or an epoxy resin, and can transmit radiation without excessive absorption, scattering, or reflection if it has a certain thickness. The lower surface of the resin layer 170 is formed flat so that the second main surface BS of the detection substrate 100 is flat. Any resin material such as a thermosetting resin, a UV-curing resin, or a two-component curing resin can be used for the resin layer 170. However, in order to suppress the occurrence of thermal stress inside the resin layer and to prevent the detection substrate 100 from warping excessively, a UV-curing resin or a two-component curing resin is preferably used.

[0028] The thinned semiconductor layer 110 has a small mechanical strength, and minute polishing scratches caused by back grinding or CMP (chemical mechanical polishing) during the thinning process remain on the second main surface BS side, and it is difficult to completely remove these scratches. If an external force is applied to the detection substrate 100 during assembly or transportation of the radiation detector 500, the detection substrate 100 may be damaged due to the minute scratches.

[0029] According to this embodiment, by providing the resin layer 170 on at least the main surface of the detection region of the detection substrate 100, the mechanical strength of the detection substrate 100 is improved, and damage caused by external forces is suppressed. In addition, the resin layer 170 can absorb and disperse external forces acting on the detection substrate 100, reducing the external forces acting on the semiconductor layer 110, and suppressing damage to the detection substrate 100 caused by external forces.

[0030] The resin layer 170 is typically provided on the second main surface BS, but from the viewpoint of improving the mechanical strength of the detection substrate, it may be provided on the first main surface FS side as shown in Fig. 2. When the resin layer 170 is provided on the first main surface FS side, the resin layer 170 can be disposed in an area excluding an opening for connecting the terminal 160 and the connection member 300.

[0031] Regardless of whether the resin layer 170 is provided on the first principal surface FS or the second principal surface BS, in order to prevent a decrease in detection accuracy, a resin material that does not contain more metal particles or inorganic particles that inhibit the transmission of radiation than necessary is used for the portion provided in the detection area PA. Note that the portion of the resin layer 170 provided in the peripheral area PB may contain metal particles or inorganic particles.

[0032] In order to efficiently release heat generated by the incidence of radiation on the detection substrate 100, it is preferable to use a material with good thermal conductivity for the resin layer 170. For example, thermal conductivity can be improved by using a resin material in which metal particles are dispersed in a binder resin. However, since the inclusion of metal particles may hinder the transmission of radiation and worsen crosstalk, when metal particles are to be contained, the thickness of the resin layer arranged in the detection area PA is preferably 5 μm or less. Alternatively, a resin layer containing metal particles may be provided in the peripheral area PB, and a resin layer of only binder resin containing no metal particles may be provided in the detection area PA.

[0033] The thickness of the resin layer 170 may be 1 μm or more in consideration of covering and smoothing the polishing scratches on the second main surface BS side of the semiconductor layer 110, and is preferably 3 μm or more in consideration of absorbing and dispersing external forces. On the other hand, if the resin layer 170 is too thick, it is likely to hinder the transmission of radiation in the detection area PA, and the internal stress of the resin layer may increase, causing the detection substrate 100 to warp too much. Therefore, the thickness of the resin layer 170 in the detection area PA is preferably smaller than the thickness of the semiconductor layer 110 in the detection area PA. More preferably, the detection substrate 100 is configured so that the thickness of the resin layer 170 in the detection area PA is half or less of the thickness of the semiconductor layer 110 in the detection area PA. For example, when the thickness of the semiconductor layer 110 in the detection area PA is 40 μm, the thickness of the resin layer 170 in the detection area PA is preferably less than 40 μm, and in this case, the resin layer 170 hardly hinders the transmission of radiation and causes problems.

[0034] In FIG. 1(b), an example in which the thickness of the resin layer 170 is uniform over the entire surface is shown, but as shown in FIG. 3, the thickness of the resin layer 170 may be different between the detection area PA and the peripheral area PB. Specifically, it is preferable to make the thickness of the resin layer in the detection area PA smaller than that of the peripheral area PB, and it is preferable to make the thickness of the resin layer 170 in the detection area PA half or less of the thickness of the resin layer 170 in the peripheral area PB. For example, the thickness of the resin layer 170 in the peripheral area PB is set to 30 μm, and the thickness in the detection area PA is set to 5 μm. A photoresist is formed on the resin layer 170, and the resin layer only in the detection area PA can be thinned by ashing or other techniques. In this way, the mechanical strength of the peripheral area PB of the detection substrate 100 can be significantly improved, while the mechanical strength and radiation permeability in the detection area PA can be improved.

[0035] Furthermore, when connecting the connection member 300 to the terminal 160, if the resin layer 170 is excessively deformed by application of an external force, the thinned semiconductor layer 110 may be subjected to excessive force and damaged. In order to prevent this, it is preferable that the elastic modulus of the resin layer 170 is 100 MPa or more. More preferably, it is preferable that the elastic modulus of the resin layer 170 is 300 MPa or more.

[0036] When forming the resin layer 170, the resin layer 170 may be formed on the entire surface of a semiconductor wafer (semiconductor substrate) on which a plurality of detection substrates (portions excluding the resin layer 170) are formed, and then the individual detection substrates 100 may be cut by a dicing process. Alternatively, the individual detection substrates may be cut from a wafer on which the resin layer 170 is not formed, and then the resin layer 170 may be formed on each detection substrate. If the semiconductor wafer before cutting or the individual pieces after cutting are called semiconductor substrates, a semiconductor substrate is prepared in which the radiation detection elements 120 are provided in the detection region PA of the first main surface FS and the terminals 160 are provided in the peripheral region PB of the first main surface FS. Then, a resin layer 170 having a thickness smaller than the thickness of the semiconductor substrate in the detection region PA is formed on at least one of the first main surface FS and the second main surface BS at a position overlapping at least with the detection region PA when seen from a direction perpendicular to the first main surface FS.

[0037] For example, a UV curable resin or a thermosetting resin can be uniformly applied by, for example, spin coating to the second main surface BS of a wafer on which a plurality of detection substrates (portions excluding the resin layer 170) have been formed, and then cured by UV or heat to form the resin layer 170. Alternatively, the detection substrates can be cut out by dicing from a semiconductor wafer on which the resin layer 170 has not yet been formed, and a UV curable resin or a thermosetting resin can be applied by, for example, spray coating to the second main surface BS of each detection substrate, and then cured by UV or heat to form the resin layer 170.

[0038] In the dicing process for cutting out the detection substrates arranged on the wafer, a disk-shaped cutting tool rotating at high speed is used to physically contact the detection substrates and perform the process. For this reason, chipping and cracks may occur at the edge portions of the first main surface FS and the second main surface BS of the semiconductor layer 110. If the resin layer 170 is not provided, when an external force is applied during the process of assembling the radiation detector 500 or during transportation, scratches may grow from the chipping and cracks, leading to damage to the detection substrate 100. In this regard, according to the present embodiment, since the resin layer 170 is provided on the main surface of the detection substrate 100, even if an external force is applied to the detection substrate 100, the force is dispersed and does not concentrate locally, so that damage to the detection substrate 100 can be suppressed.

[0039] Furthermore, when mounting the second main surface BS of the detection board 100 on the circuit board 200 to assemble the radiation detector 500, for example, a hard foreign object may be present between the detection board 100 and the circuit board 200. If the resin layer 170 were not provided, force would be concentrated at the point of contact with the foreign object, and the thinned semiconductor layer 110 may be damaged. In this regard, according to the present embodiment, the resin layer 170 is provided on the main surface of the detection board 100, so that external forces are absorbed and dispersed, and damage to the detection board 100 can be suppressed.

[0040] (Radiation detector manufacturing method) A method for manufacturing the radiation detector 500 according to the embodiment will be described with an example. Here, a case where a DAF (die attach film) is used as the resin layer 170 will be described.

[0041] First, a semiconductor wafer is prepared, and the detection element 120 is formed on the side that will become the first main surface FS of the detection substrate. An insulating layer 130 is formed on the detection element 120, and a wiring layer 140 is provided inside the insulating layer 130. Furthermore, a peripheral circuit and terminals 160 are provided in a position that will become the peripheral region PB of the detection substrate. The terminals 160 may be formed in the same layer as the wiring layer 140. Next, a sealing layer 150 is provided to protect the wiring layer 140 and the detection element 120 from moisture and the like. In this way, a plurality of detection substrates (portions excluding the resin layer 170) are formed on the semiconductor wafer.

[0042] A support substrate (not shown) such as glass is temporarily attached onto a wafer on which multiple detection substrates (excluding resin layer 170) are formed, and the second main surface BS side of the wafer is then thinned to a desired thickness (e.g., 40 μm) by back grinding. Once thinning is complete, the wafer with the support substrate attached is attached to a dicing tape having a DAF on its surface. The wafer is then diced to separate the portions that will become the detection substrates.

[0043] By picking up the individual pieces, the DAF provided on the dicing tape is transferred to the surface that is to become the second main surface BS, and the detection substrate 100 having the resin layer 170 is formed.

[0044] The detection board 100 is aligned and mounted on the circuit board 200, and the peripheral area PB of the second main surface BS is brought into contact with the circuit board 200 and heat is applied. This causes the resin layer 170 made of the DAF to harden, and the detection board 100 and the circuit board 200 can be bonded together. The DAF in the portion not in contact with the circuit board 200 also hardens, and a resin layer 170 with a smooth surface is formed on the second main surface BS side of the detection area PA.

[0045] Finally, the terminal 160 and the terminal 210 of the circuit board 200 are connected by wire bonding using a wire of gold or silver or the like as the connecting member 300, thereby completing the radiation detector 500.

[0046] According to this embodiment, the mechanical strength of the detection board 100 is improved by providing the resin layer 170 on the main surface of the detection board 100, and therefore damage to the detection board 100 can be suppressed even if an external force is applied during the assembly process or transportation of the radiation detector 500. As a result, the yield and reliability when mounting the detection board are improved.

[0047] [Embodiment 2] A radiation detector 510 according to embodiment 2 will be described. Elements common to embodiment 1 are indicated by the same reference symbols in the drawings. Furthermore, descriptions of common matters may be simplified or omitted.

[0048] Fig. 4(a) shows a plan view of a radiation detector 510 according to this embodiment as seen from the direction in which radiation is incident, and Fig. 4(b) shows a cross-sectional view taken along line CC in Fig. 4(a). The radiation detector 510 is the same as in the first embodiment in that it includes a detection substrate 100, a circuit substrate 200, and a connection member 300, but differs in that an adhesive layer 400 is provided between the detection substrate 100 and the circuit substrate 200.

[0049] 4(b), the resin layer 170 is typically provided on the second main surface BS, but from the viewpoint of improving the mechanical strength of the detection substrate, it may be provided on the first main surface FS side. When the resin layer 170 is provided on the first main surface FS side, the resin layer 170 is disposed in an area excluding an opening for connecting the terminal 160 and the connection member 300.

[0050] 4(a), in a plan view, the adhesive layer 400 protrudes into the outer region of the detection substrate 100, and as shown in Fig. 4(b), a part of the side surface of the detection substrate 100 is covered by the adhesive layer 400. In other words, an outer end 400E of the adhesive layer 400 protrudes outward from the outer surface 100E of the detection substrate 100, and an edge of the upper surface 400T of the adhesive layer 400 at the protruding portion 400X abuts against the outer surface 100E of the detection substrate 100.

[0051] As described above, by dicing the thinned wafer, chipping and cracks are formed at the end of the semiconductor layer 110, which is mechanically fragile and easily damaged. If the resin layer 170 were not provided, when an external force is applied during the process of assembling the radiation detector 510 or during transportation, scratches may grow from the chipping and cracks, leading to damage to the detection substrate 100. In this regard, according to the present embodiment, since the resin layer 170 is provided on the main surface of the detection substrate 100, even if an external force is applied to the detection substrate 100, the force is dispersed and does not concentrate locally, so that damage to the detection substrate 100 can be suppressed.

[0052] Furthermore, in this embodiment, the mechanical strength can be improved by covering at least a part of the end face (side face) of the detection substrate 100 with the adhesive layer 400. Of course, the entire end face (side face) of the detection substrate 100 may be covered with the adhesive layer 400.

[0053] It is preferable that the inner end 400I of the adhesive layer 400 is disposed outside (toward the peripheral area PB) the boundary between the detection area PA and the peripheral area PB. In particular, when the adhesive layer 400 contains metal particles or inorganic particles to improve thermal conductivity in order to prevent heat from accumulating in the detection substrate 100, radiation that has passed through the detection area PA may be scattered or reflected by the adhesive layer 400, causing noise to be generated. Therefore, it is preferable to dispose the adhesive layer 400 at a position that does not overlap with the detection area PA when viewed in a plan view.

[0054] In addition, the inner end 400I of the adhesive layer 400 is preferably provided on the inner side (detection area PA side) of the inner end 160E of the terminal 160. In other words, the end (inner end 400I) of the adhesive layer 400 on the side closer to the detection area PA is closer to the detection area PA than the end (end 160E) of the terminal 160 on the side closer to the detection area PA. By disposing the adhesive layer 400 at a position overlapping with the terminal 160 in a plan view, it is possible to eliminate a gap between the second main surface BS of the detection substrate 100 and the circuit substrate 200 in the peripheral area PB. This makes it possible to suppress damage to the thinned detection substrate 100 (semiconductor layer 110) even if an external force is applied when connecting the connection member 300 to the terminal 160.

[0055] The adhesive layer 400 can be made of any resin material, such as a thermosetting resin, a UV-curable resin, or a two-component curable resin. However, since the adhesive layer 400 is disposed between the detection board 100 and the circuit board 200, it is difficult to irradiate the adhesive layer 400 with UV light. Therefore, a thermosetting resin is preferably used for the adhesive layer 400. As described above, in order to efficiently release heat generated by radiation incident on the detection board 100, it is preferable to use a material with good thermal conductivity for the adhesive layer 400. For example, the thermal conductivity of the adhesive layer 400 can be improved by using a resin material in which metal particles are dispersed in a binder resin. From the viewpoint of thermal conductivity, the thickness of the adhesive layer 400 disposed between the detection board 100 and the circuit board 200 is preferably 50 μm or less.

[0056] Furthermore, when mounting the second main surface BS of the detection board 100 on the circuit board 200 to assemble the radiation detector 510, for example, a hard foreign object may be present between the detection board 100 and the circuit board 200. If the resin layer 170 were not provided, force would be concentrated at the point of contact with the foreign object, and the thinned semiconductor layer 110 may be damaged. In this regard, according to the present embodiment, the resin layer 170 is provided on the main surface of the detection board 100, so that external forces are absorbed and dispersed, and damage to the detection board 100 can be suppressed.

[0057] Furthermore, in this embodiment, the radiation detector 510 can be assembled using a resin that has plasticity before hardening, such as DAF (die attach film), as the adhesive layer 400. In this case, the detection board 100 and the circuit board 200 are aligned while the adhesive layer 400 has plasticity, and then the adhesive layer 400 is solidified. Even if a foreign object is sandwiched between the detection board 100 and the circuit board 200, the adhesive layer 400 can be deformed to encase the foreign object and then solidified. As a result, a structure is formed in which an external force applied to the detection board 100 is dispersed without being concentrated on the location where the foreign object is present, and therefore the detection board 100 can be prevented from being damaged by the external force.

[0058] Furthermore, if the adhesive layer 400 is excessively deformed by an external force when connecting the connection member 300 to the terminal 160, the thinned semiconductor layer 110 may be subjected to excessive force and damaged. In order to prevent this, it is preferable that the adhesive layer 400 has an elastic modulus of 100 MPa or more. More preferably, it is preferable that the adhesive layer 400 has an elastic modulus of 300 MPa or more.

[0059] If the detection board 100 is mounted on the circuit board 200 at an angle, the incident angle of the radiation irradiating the detection board 100 is tilted, which may cause reflection or refraction, resulting in a decrease in detection accuracy. Therefore, it is preferable to disperse spacers having a desired particle size in the resin constituting the adhesive layer 400 so that the thickness of the adhesive layer between the detection board 100 and the circuit board 200 is uniform. By using the spacers, the thickness of the adhesive layer 400 can be controlled to a uniform predetermined thickness within the adhesive surface, so that the distance between the circuit board 200 and the detection board 100 is specified, and the detection board 100 can be fixed so that the main surface is parallel to the circuit board 200. In other words, the detection board 100 can be fixed so that the radiation is incident on the detection area PA at a predetermined angle.

[0060] The adhesive layer 400 can be formed on the circuit board 200 using a coating technique such as a dispenser or screen printing. The adhesive layer 400 is formed in advance so that the outer end 400E protrudes outward from the outer surface 100E of the detection board 100. The detection board 100 is aligned with respect to the circuit board 200 to which the adhesive layer 400 is applied, and the detection board 100 is mounted on the circuit board 200. Thereafter, a load is applied from the detection board 100 side, so that the detection board 100 sinks into the adhesive layer 400, and the edge of the upper surface 400T of the adhesive layer 400 at the protruding portion 400X abuts against the outer surface 100E of the detection board 100. While maintaining the position and orientation in that state, the adhesive layer 400 is cured using a curing method according to the type of adhesive. Thereafter, the terminal 210 of the circuit board 200 and the terminal 160 of the detection board 100 are electrically connected by the connection member 300, thereby completing the radiation detector 510 of this embodiment.

[0061] In this embodiment, too, the mechanical strength of the detection substrate 100 is improved by providing a resin layer 170 on the main surface of the detection substrate 100, so that damage to the detection substrate 100 can be suppressed even if an external force is applied during the assembly process or transportation of the radiation detector 510.

[0062] Furthermore, because the adhesive layer 400 covers at least a part of the end face of the detection substrate 100, damage to the end face of the detection substrate 100 when an external force is applied can be suppressed more than in the first embodiment. Damage to the detection substrate 100 that occurs when connecting the connection member 300 to the terminal 160 can also be suppressed. As a result, the yield and reliability of the detection substrate are further improved.

[0063] [Embodiment 3] A radiation detector 520 according to embodiment 3 will be described with reference to Fig. 5(a) and Fig. 5(b). Elements common to embodiment 1 or embodiment 2 are designated by the same reference symbols in the drawings. Furthermore, descriptions of common matters may be simplified or omitted.

[0064] Fig. 5(a) shows a plan view of a radiation detector 520 according to this embodiment as seen from the direction in which radiation is incident, and Fig. 5(b) shows a cross-sectional view taken along line CC in Fig. 5(a). The radiation detector 520 is the same as in the second embodiment in that it includes a detection substrate 100, a circuit substrate 200, a connection member 300, and an adhesive layer 400, but differs in that resin layers are provided on both main surfaces of the detection substrate 100. As shown in Fig. 5(b), a first resin layer 171 is disposed in a detection region PA of a first main surface FS of the detection substrate 100, and a second resin layer 172 is disposed in a detection region PA of a second main surface BS.

[0065] The materials and thickness ranges of the first resin layer 171 and the second resin layer 172 are the same as those of the resin layer 170 in the first embodiment. In the case where a resin layer is provided only on one of the first main surface FS and the second main surface BS, when radiation is incident on the detection substrate 100 and the temperature of the detection substrate 100 rises, the detection substrate 100 may warp due to the difference in linear expansion coefficient between the semiconductor layer 110 and the resin layer 170. In this embodiment, in consideration of reducing damage to the detection substrate 100 due to warping, it is preferable that the first resin layer 171 and the second resin layer 172 have approximately the same thickness and area, and are arranged so as to overlap each other when viewed in a plan view. More preferably, the first resin layer 171 and the second resin layer 172 have approximately the same thickness and area, and are arranged so as to overlap each other when viewed in a plan view.

[0066] The material and thickness range of the adhesive layer 400 are similar to those of the adhesive layer 400 in the second embodiment. However, in this embodiment, as shown in FIG. 5(b), the adhesive layer 400 is disposed at a distance from the second resin layer 172 so as not to interfere with the second resin layer 172.

[0067] In this embodiment, a material with good thermal conductivity, such as a resin containing metal particles, can also be used as the adhesive layer 400. If a second resin layer 172 with low thermal conductivity (e.g., a resin layer not containing metal particles) is disposed between the semiconductor layer 110 and the adhesive layer 400, heat cannot be effectively released to the circuit board 200 via the adhesive layer 400, and the cooling ability of the detection board 100 decreases. In this embodiment, the second resin layer 172 is not provided in the peripheral region PB on the second main surface BS, and the semiconductor layer 110 and the adhesive layer 400 are configured to abut against each other. This makes it possible to efficiently conduct heat generated in the detection board 100 by the incidence of radiation to the circuit board 200 side.

[0068] In the example shown in Figures 5(a) and 5(b), the adhesive layer 400 does not protrude outward from the detection substrate 100, but as in embodiment 2, the adhesive layer 400 may be made to protrude outward from the detection substrate 100 and cover at least a portion of the end side of the detection substrate 100.

[0069] The method of forming the adhesive layer 400 on the circuit board 200, the method of adhering the detection board 100 to the circuit board 200, and the method of electrically connecting the terminals with the connecting member can be performed in the same manner as in embodiment 2. Through the above, the radiation detector 520 of this embodiment is completed.

[0070] In this embodiment, too, the mechanical strength of the detection substrate 100 is improved by providing a resin layer on the main surface of the detection substrate 100, so that damage to the detection substrate 100 can be suppressed even if an external force is applied during the assembly process or transportation of the radiation detector 520.

[0071] Furthermore, in this embodiment, in the detection region PA where the thickness of the semiconductor layer 110 is small, by providing a resin layer on both main surfaces of the detection substrate 100, the mechanical strength can be effectively increased. Since the resin layers are provided on both main surfaces, it is possible to suppress the occurrence of warping in the detection substrate 100 due to the difference in the linear expansion coefficient between the semiconductor layer 110 and the resin layer when radiation is incident and heat is generated. Therefore, compared to the first and second embodiments, it is possible to prevent a decrease in detection accuracy and damage to the detection substrate 100 due to warping caused by heat generation.

[0072] Moreover, by not providing the second resin layer 172 in the peripheral region PB and by abutting the semiconductor layer 110 and the adhesive layer 400, the heat of the detection substrate 100 can be efficiently dissipated to the circuit substrate 200 via the adhesive layer. As described above, according to the present embodiment, the yield and reliability of the detection substrate can be improved.

[0073] [Embodiment 4] As a fourth embodiment, a radiation imaging device 801 including a radiation detector according to any one of the first to third embodiments and a radiation imaging system 800 using the radiation imaging device will be described with reference to Fig. 6. The radiation detector APR shown in Fig. 6 is any one of the radiation detector 500 according to the first embodiment, the radiation detector 510 according to the second embodiment, and the radiation detector 520 according to the third embodiment.

[0074] The radiation imaging system 800 is configured to electrically capture an optical image formed by radiation and obtain an electrical radiation image (i.e., radiation image data). The radiation imaging system 800 includes, for example, a radiation imaging device 801, an exposure control unit 802, a radiation source 803, and a computer 804. The radiation imaging system 800 can display a captured radiation image on a display device (not shown) and transmit radiation image data to the outside via a communication device (not shown). The radiation imaging system 800 can be suitably used in fields such as medical image diagnosis and non-destructive testing.

[0075] A radiation source 803 for irradiating radiation starts irradiating radiation in accordance with an exposure command from an exposure control unit 802. The radiation irradiated from the radiation source 803 passes through an object (not shown) and is irradiated onto the radiation imaging device 801. The radiation source 803 stops emitting radiation in accordance with a stop command from the exposure control unit 802.

[0076] The radiation imaging device 801 includes a radiation detector APR, a control unit 805 for controlling the radiation detector APR, and a signal processing unit 806 for processing signals output from the radiation detector APR.

[0077] For example, when the signal output from the radiation detector APR is an analog signal, the signal processing unit 806 can perform A / D conversion of the signal and output it as radiation image data to the computer 804. Furthermore, the signal processing unit 806 may generate a stop signal for stopping the irradiation of radiation from the radiation source 803 based on the signal output from the radiation detector APR. The stop signal is supplied to the exposure control unit 802 via the computer 804, and the exposure control unit 802 sends a stop command to the radiation source 803 in response to the stop signal.

[0078] The control unit 805 may be configured, for example, by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array). Alternatively, the control unit 805 may be configured by an ASIC (Application Specific Integrated Circuit) or a general-purpose computer with a built-in program. Furthermore, the control unit 805 may be configured by a combination of all or part of the above.

[0079] Also, the signal processing unit 806 is illustrated as being disposed in the control unit 805 or as a part of the function of the control unit 805, but is not limited thereto. The control unit 805 and the signal processing unit 806 may be configured separately. Furthermore, the signal processing unit 806 may be disposed separately from the radiation imaging device 801. For example, the computer 804 may have the function of the signal processing unit 806. For this reason, the signal processing unit 806 may be included in the radiation imaging system 800 as a signal processing device that processes a signal output from the radiation imaging device 801.

[0080] The computer 804 can control the radiation imaging apparatus 801 and the exposure control unit 802, receive radiation image data from the radiation imaging apparatus 801, and perform processing for displaying the data as a radiation image. The computer 804 can also function as an input unit for a user to input conditions for capturing a radiation image.

[0081] As an example of the sequence, the exposure control unit 802 has an exposure switch, and when the exposure switch is turned on by a user, it sends an exposure command to the radiation source 803 and also sends a start notification indicating the start of radiation emission to the computer 804. In response to the start notification, the computer 804 notifies the control unit 805 of the radiation imaging device 801 of the start of radiation irradiation. In response to this, the control unit 805 causes the radiation detector APR to generate a signal corresponding to the incident radiation.

[0082] The radiation imaging device of the present embodiment and the radiation imaging system using the radiation imaging device detect radiation using a radiation detector APR. The radiation detector APR has a resin layer provided on the main surface of the detection substrate, and therefore has high mechanical strength, thereby improving the reliability of the radiation imaging device and the radiation imaging system using the radiation imaging device.

[0083] [Other embodiments] A transmission electron microscope (TEM) system may be configured as a radiation imaging system incorporating a radiation detector according to any one of the above-mentioned embodiments 1 to 3. In this case, a resin layer is provided on the main surface of the detection substrate of the radiation detector, so that the mechanical strength of the radiation detector is high. This can improve the reliability of the transmission electron microscope (TEM) system.

[0084] In addition to a transmission electron microscope (TEM), it may be, for example, a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM).Furthermore, it may be an electron microscope equipped with a processing function such as ion beam milling or ion beam induced deposition (IBID), or a dual beam electron microscope equipped with a focused ion beam (FIB) such as a FIB-SEM.

[0085] The present invention is not limited to the above-described embodiment, and many modifications are possible within the technical spirit of the present invention. For example, the above-described different embodiments may be combined in whole or in part.

[0086] This specification discloses at least the following: [Item 1] A detection substrate including a semiconductor layer and a resin layer, and a circuit substrate, the detection substrate has a detection region in which a radiation detection element is provided in the semiconductor layer, and a peripheral region provided outside the detection region, the circuit board supports a second main surface of the detection board opposite a first main surface on which the radiation is incident, in at least a part of the peripheral region of the detection board; The resin layer is provided at least in the detection region on at least one of the first main surface and the second main surface of the detection substrate, The thickness of the resin layer in the detection region is smaller than the thickness of the semiconductor layer in the detection region. A radiation detector comprising: [Matter 2] The thickness of the semiconductor layer in the detection region is 10 μm or more and 100 μm or less. 2. The radiation detector according to item 1, [Matter 3] The thickness of the resin layer in the detection region is 1 μm or more and is half or less of the thickness of the semiconductor layer in the detection region. 3. The radiation detector according to item 1 or 2, [Matter 4] The resin layer is provided in both the detection area and the peripheral area, and a thickness of the resin layer in the detection area is smaller than a thickness of the resin layer in the peripheral area. 4. The radiation detector according to claim 1, wherein the radiation detector comprises: [Matter 5] The resin layer is provided on both the first main surface and the second main surface of the detection substrate in the detection region. 5. The radiation detector according to claim 1, wherein the radiation detector comprises: [Matter 6] The elastic modulus of the resin layer is 100 MPa or more. 6. The radiation detector according to claim 1, wherein the radiation detector comprises: [Matter 7] The detection substrate is fixed to the circuit board in the peripheral region via an adhesive layer. 7. The radiation detector according to any one of items 1 to 6, [Matter 8] The adhesive layer covers at least a portion of a side surface of the detection substrate. 8. The radiation detector according to item 7, [Matter 9] The adhesive layer includes a resin material having metal particles dispersed therein. 9. The radiation detector according to item 7 or 8, [Matter 10] The adhesive layer contains a spacer that defines a distance between the detection substrate and the circuit substrate. 10. The radiation detector according to any one of claims 7 to 9, [Matter 11] The adhesive layer has an elastic modulus of 100 MPa or more. 11. The radiation detector according to any one of claims 7 to 10. [Matter 12] The adhesive layer is provided apart from the resin layer. 12. The radiation detector according to any one of claims 7 to 11, [Matter 13] A signal processing circuit and a terminal are provided in the peripheral region of the semiconductor layer, The terminal is electrically connected to the circuit board via a connecting member. 13. The radiation detector according to any one of claims 1 to 12. [Matter 14] the detection substrate is fixed to the circuit board in the peripheral region via an adhesive layer, When the radiation detector is viewed from a direction perpendicular to the first main surface, an end of the adhesive layer close to the detection area is closer to the detection area than an end of the terminal close to the detection area; 14. The radiation detector according to item 13, [Matter 15] When the radiation detector is viewed from a direction perpendicular to the first main surface, The terminal and the circuit board are overlapped with each other. 15. The radiation detector according to item 13 or 14, [Matter 16] When the radiation detector is viewed from a direction perpendicular to the first main surface, An opening is provided in the circuit board at a position corresponding to the detection area. 16. The radiation detector according to any one of claims 1 to 15, [Matter 17] A signal processing circuit and a terminal are provided in the peripheral region of the semiconductor layer, When the radiation detector is viewed from a direction perpendicular to the first main surface, The edge of the opening is closer to the detection area than the end of the terminal closer to the detection area. 17. The radiation detector according to item 16, [Matter 18] A radiation detector according to any one of claims 1 to 17, a signal processing unit that processes a signal output by the radiation detector; A radiation imaging system comprising: [Matter 19] A radiation detector according to any one of claims 1 to 17, A radiation source; A radiation imaging system comprising: [Matter 20] preparing a semiconductor substrate having a radiation detection element provided in a detection region of a first main surface and a terminal provided in a peripheral region of the first main surface, and a circuit board; A resin layer having a thickness smaller than a thickness of the semiconductor substrate in the detection region is formed on at least one of the first main surface and a second main surface opposite to the first main surface, at a position overlapping at least the detection region when viewed from a direction perpendicular to the first main surface; The semiconductor substrate on which the resin layer is formed is fixed to the circuit board so that the second main surface is supported in the peripheral region; The terminal and the circuit board are electrically connected with a connecting member. 4. A method for manufacturing a radiation detector comprising the steps of: [Explanation of symbols]

[0087] 100···Detection substrate / 110···Semiconductor layer / 120···Detection element / 130···Insulation layer / 140···Wiring layer / 150···Sealing layer / 160···Terminal / 170···Resin layer / 171···First resin layer / 172···Second resin layer / 200···Circuit board / 210···Terminal / 300···Connecting member / 500, 510, 520···Radiation detector / 800···Radiation imaging system / 801···Radiation imaging device / 803···Radiation source / 1002···Electron beam source / APR···Radiation detector / BS···Second main surface / FS···First main surface / PA···Detection area / PB···Peripheral area

Claims

1. The device comprises a detection substrate including a semiconductor layer and a resin layer, and a circuit board. The detection substrate has a detection region on the semiconductor layer where a radiation detection element is provided, and a peripheral region provided outside the detection region. In at least a portion of the peripheral region of the detection substrate, the circuit board supports the second main surface of the detection substrate opposite to the first main surface to which the radiation is incident. At least one of the first main surface and the second main surface of the detection substrate is provided with the resin layer in at least the detection region. The thickness of the resin layer in the detection region is smaller than the thickness of the semiconductor layer in the detection region. A radiation detector characterized by the following features.

2. The thickness of the semiconductor layer in the detection region is 10 μm or more and 100 μm or less. The radiation detector according to claim 1.

3. The thickness of the resin layer in the detection region is 1 μm or more, and less than or equal to half the thickness of the semiconductor layer in the detection region. A radiation detector according to claim 1 or 2, characterized by the above.

4. The resin layer is provided in both the detection region and the peripheral region, and the thickness of the resin layer in the detection region is smaller than the thickness of the resin layer in the peripheral region. A radiation detector according to claim 1 or 2, characterized by the above.

5. The resin layer is provided on both the first main surface and the second main surface of the detection substrate in the detection region. A radiation detector according to claim 1 or 2, characterized by the above.

6. The elastic modulus of the resin layer is 100 MPa or more. A radiation detector according to claim 1 or 2, characterized by the above.

7. The detection substrate is fixed to the circuit board via an adhesive layer in the peripheral region. A radiation detector according to claim 1 or 2, characterized by the above.

8. The adhesive layer covers at least a portion of the side surface of the detection substrate. The radiation detector according to feature 7.

9. The adhesive layer comprises a resin material in which metal particles are dispersed. The radiation detector according to feature 7.

10. The adhesive layer contains a spacer that defines the distance between the detection substrate and the circuit board. The radiation detector according to feature 7.

11. The elastic modulus of the adhesive layer is 100 MPa or more. The radiation detector according to feature 7.

12. The adhesive layer is provided spaced apart from the resin layer. The radiation detector according to feature 7.

13. A signal processing circuit and terminals are provided in the peripheral region of the semiconductor layer. The terminal is electrically connected to the circuit board via a connecting member. A radiation detector according to claim 1 or 2, characterized by the above.

14. The detection substrate is fixed to the circuit board via an adhesive layer in the peripheral region. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The end of the adhesive layer closest to the detection region is closer to the detection region than the end of the terminal closest to the detection region. The radiation detector according to claim 13.

15. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The terminal and the circuit board are overlapping. The radiation detector according to claim 13.

16. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The circuit board is provided with an opening at a position corresponding to the detection area. A radiation detector according to claim 1 or 2, characterized by the above.

17. A signal processing circuit and terminals are provided in the peripheral region of the semiconductor layer. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The edge of the opening is closer to the detection area than the end of the terminal that is closer to the detection area. The radiation detector according to claim 16.

18. A detection substrate comprising a semiconductor layer and a layer different from the semiconductor layer, and a circuit board, The detection substrate has a detection region on the semiconductor layer where a radiation detection element is provided, and a peripheral region provided outside the detection region. In at least a portion of the peripheral region of the detection substrate, the circuit board supports the second main surface of the detection substrate opposite to the first main surface to which the radiation is incident. At least one of the first main surface and the second main surface of the detection substrate is provided with the layer in at least the detection region. The thickness of the layer in the detection region is smaller than the thickness of the semiconductor layer in the detection region. The elastic modulus of the aforementioned layer is 100 MPa or more. A radiation detector characterized by the following features.

19. The elastic modulus of the layer is 300 MPa or more. The radiation detector according to claim 18.

20. The thickness of the semiconductor layer in the detection region is 10 μm or more and 100 μm or less. The radiation detector according to claim 18.

21. The thickness of the layer in the detection region is 1 μm or more, and is less than or equal to half the thickness of the semiconductor layer in the detection region. The radiation detector according to claim 18.

22. The layer is provided in both the detection region and the peripheral region, and the thickness of the layer in the detection region is smaller than the thickness of the layer in the peripheral region. The radiation detector according to claim 18.

23. The layer is provided on both the first main surface and the second main surface of the detection substrate in the detection region. The radiation detector according to claim 18.

24. The detection substrate is fixed to the circuit board via an adhesive layer in the peripheral region. The radiation detector according to claim 18.

25. The adhesive layer covers at least a portion of the side surface of the detection substrate. The radiation detector according to feature 24.

26. The adhesive layer comprises a resin material in which metal particles are dispersed, The radiation detector according to feature 24.

27. ​​The adhesive layer is provided spaced apart from the layer. The radiation detector according to feature 24.

28. A signal processing circuit and terminals are provided in the peripheral region of the semiconductor layer. The terminal is electrically connected to the circuit board via a connecting member. The radiation detector according to claim 18.

29. The detection substrate is fixed to the circuit board via an adhesive layer in the peripheral region, When the radiation detector is viewed through from a direction perpendicular to the first main surface, The end of the adhesive layer closest to the detection region is closer to the detection region than the end of the terminal closest to the detection region. The radiation detector according to claim 28.

30. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The terminal and the circuit board are overlapping. The radiation detector according to claim 28.

31. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The circuit board is provided with an opening at a position corresponding to the detection area. The radiation detector according to claim 18.

32. A signal processing circuit and terminals are provided in the peripheral region of the semiconductor layer. When the radiation detector is viewed through from a direction perpendicular to the first main surface, The edge of the opening is closer to the detection area than the end of the terminal that is closer to the detection area. The radiation detector according to claim 31.

33. A radiation detector according to claim 1 or 2, A signal processing unit that processes the signal output by the radiation detector, A radiation imaging system characterized by having the following features.

34. A radiation detector according to claim 18, A signal processing unit that processes the signal output by the radiation detector, A radiation imaging system characterized by having the following features.

35. A radiation detector according to claim 1 or 2, Radiation source and A radiation imaging system characterized by having the following features.

36. A radiation detector according to claim 18, Radiation source and A radiation imaging system characterized by having the following features.

37. A semiconductor substrate is prepared, in which a radiation detection element is provided in the detection region of the first main surface and terminals are provided in the peripheral region of the first main surface, and a circuit board is prepared. When viewed from a direction perpendicular to the first main surface, a resin layer having a thickness smaller than the thickness of the semiconductor substrate in the detection region is formed on at least one of the first main surface and the second main surface opposite to the first main surface, at a position that overlaps with the detection region. The semiconductor substrate on which the resin layer is formed is fixed to the circuit board such that the second main surface is supported in the peripheral region. The terminal and the circuit board are electrically connected by a connecting member. A method for manufacturing a radiation detector, characterized by the following:

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