Light-emitting device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- STANLEY ELECTRIC CO LTD
- Filing Date
- 2023-05-22
- Publication Date
- 2026-08-03
AI Technical Summary
Light emitting devices using LEDs as light sources suffer from light loss due to stray light entering the resin layer, which increases when used in applications like head-up displays, necessitating a solution to reduce light loss and narrow the angle of emitted light.
A light emitting device with a rectangular parallelepiped shape featuring a light emitting element, a translucent member with spaced light emitting regions, and an optical structure comprising convex lenses to focus and emit light within a narrower angular range.
The device effectively reduces light loss and narrows the angle of emitted light, enhancing light utilization and reducing stray light entry, thereby improving efficiency.
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Abstract
Description
[Technical field]
[0001] The present invention relates to a light emitting device including a light emitting element. [Background technology]
[0002] 2. Description of the Related Art Light emitting devices using light emitting elements such as light emitting diodes (LEDs) as light sources have been known.
[0003] For example, Patent Document 1 discloses a light-emitting device having a light-emitting element mounted on a substrate, a resin layer covering the substrate and the light-emitting element and having a lens portion formed in the light-emitting element region, and a reflector surrounding the outer periphery of the lens portion on the resin layer. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] International Publication No. 2005 / 029597 Summary of the Invention [Problem to be solved by the invention]
[0005] For example, when a light-emitting device using an LED as a light source is used as a light source for a display device such as a head-up display (HUD), an optical system that deflects the light emitted from the light-emitting device is built into the HUD. In this case, it is preferable that the light emitted from the light-emitting device is emitted in a narrow angle range in order to miniaturize the optical system in the subsequent stage.
[0006] However, when a light emitting device such as that disclosed in Patent Document 1 is used as a light source, the light emitted from the light emitting element may enter the resin layer covering the substrate as stray light, which may result in significant light loss.
[0007] The present invention has been made in consideration of the above-mentioned points, and an object of the present invention is to provide a light emitting device capable of reducing the loss of light and achieving a narrow angle of emitted light. [Means for solving the problem]
[0008] The light emitting device of the present invention is characterized in having a rectangular parallelepiped shape and a light emitting element having an element electrode surface on whose underside a pair of element electrodes consisting of a cathode and an anode are formed and a light emitting surface on whose upper surface opposite the element electrode surface; a light-transmitting member arranged on the light emitting surface of the light emitting element and having a plurality of light emitting regions spaced apart from each other on the surface opposite to the surface opposite the light emitting surface; and an optical structure having a plurality of convex lens portions that are convex upward and are formed so as to overlap each of the plurality of light emitting regions when viewed from above. [Brief description of the drawings]
[0009] [Figure 1] FIG. 2 is a top view of a light emitting device according to an embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention. [Diagram 3] FIG. 2 is a top view of a light collecting member of the light emitting device according to the embodiment of the present invention. [Figure 4] 3 is an enlarged cross-sectional view of a light-collecting member and an optical structure of the light-emitting device according to the embodiment of the present invention. [Diagram 5] FIG. 4 is a cross-sectional view of a light emitting device according to a comparative example of the present invention. [Figure 6] 11 is a diagram showing the light distribution characteristics of emitted light from a light emitting device according to a comparative example of the present invention. FIG. [Figure 7] FIG. 4 is a diagram showing the light distribution characteristics of emitted light from a light emitting device according to an embodiment of the present invention. [Figure 8] 4 is an enlarged cross-sectional view of a light collecting member and an optical structure according to Modification 1 of the present invention. FIG. [Figure 9] FIG. 11 is a cross-sectional view of a light emitting device according to Modification 2 of the present invention. [Figure 10] FIG. 11 is a cross-sectional view of a light emitting device according to Modification 3 of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals. EXAMPLES
[0011] The configuration of a light emitting device 100 according to Example 1 will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a top view of the light emitting device 1 according to Example 1. Fig. 2 is a cross-sectional view taken along line AA of the light emitting device 1 shown in Fig. 1. Fig. 3 is a top view of a light collecting member 70 of the light emitting device 1. Fig. 4 is an enlarged cross-sectional view of the light collecting member 70 and optical structure 80 of the light emitting device 1, and a diagram showing light emitted from the optical structure 80.
[0012] (Light emitting device) The light emitting device 1 includes a substrate 10 having a cavity, a light emitting element 20 disposed in the cavity of the substrate 10, a wavelength conversion member 50 disposed on the upper surface of the light emitting element 20, a light collecting member 70 disposed on the wavelength conversion member 50, and an optical structure 80 having a plurality of lens portions 81 disposed on the light collecting member 70. The light emitting device 1 also includes a covering member 90 that fills the cavity of the substrate 10 and covers an area from the side surface of the light emitting element 20 through the side surface of the wavelength conversion member 50 to at least the side surface of the light collecting member 70.
[0013] (substrate) The substrate 10 is an insulating substrate having a rectangular upper surface shape and made of ceramic such as aluminum nitride (AlN). The substrate 10 has a cavity formed therein, the cavity being made up of a flat portion and a wall portion extending upward along the outer edge of the upper surface of the flat portion.
[0014] The substrate 10 may be integrally formed to have a recess that opens upward, or may be formed by joining a flat plate and a frame body having a frame shape that follows the outer edge of the flat plate. The substrate 10 may be made of an insulating material other than ceramic, such as a resin material.
[0015] 2, the substrate 10 is provided with a pair of substrate electrodes 12, 13 made of metal on the bottom surface of the cavity, which can supply power to the light emitting element 20 from outside the substrate 10. For example, the wiring electrodes are formed so as to be conductive to the outside of the substrate 10 via a through electrode or the like.
[0016] In this embodiment, a step ST is provided at the upper end of the inner wall surface of the substrate 10. The step ST prevents the covering member 90 from creeping up onto the upper surface of the optical structure 80.
[0017] Moreover, the portion extending upward from the step portion ST is a lens guard portion LG that protects the surface of the lens portion 81 of the optical structure 80 .
[0018] (Light emitting element) The light emitting element 20 is a light emitting diode (LED) having a rectangular parallelepiped shape and a gallium nitride (GaN)-based semiconductor structure layer that emits blue light. As shown in FIG. 2, the light emitting element 20 is disposed on the bottom surface of the cavity of the substrate 10 such that its side surface is spaced apart from the inner side surface of the recess of the substrate 10.
[0019] The light-emitting element 20 is an LED element in a flip-chip connection mode, which includes a semiconductor structure layer (not shown) and a pair of element electrodes consisting of an anode electrode 22 and a cathode electrode 23 on the lower surface of a light-transmitting growth substrate 21, and is configured to emit light from the upper surface of the growth substrate. In other words, the upper surface of the light-emitting element 20 is a light emission surface that emits light.
[0020] The anode electrode 22 and the cathode electrode 23 of the light-emitting element 20 are electrically connected to the substrate electrodes 12, 13 formed on the bottom surface of the cavity of the substrate 10 via an element bonding member 30 such as a gold-tin alloy (Au-Sn). That is, the light-emitting element 20 is mounted on the substrate 10 in a flip-chip manner, and is configured to be capable of being supplied with power from the outside via wiring electrodes formed on the substrate 10, making it possible to conduct electricity.
[0021] (Wavelength conversion material) The wavelength conversion member 50 is disposed so as to cover the light emission surface of the light emitting element 20 via a light-transmitting adhesive 40 such as silicone resin.
[0022] In this embodiment, the wavelength conversion member 50 is made of alumina (Al) containing yttrium aluminum garnet (YAG:Ce) phosphor particles using cerium (Ce) as an activator. 2 O 3 The wavelength conversion member 50 converts a part of the blue light from the light emitting element 20 that is incident on the bottom surface, which is the light incident surface, into yellow light, and emits white light from the top surface.
[0023] The wavelength conversion member 50 is made of a glass material containing β-sialon (β-SiAlON:Eu) phosphor particles using europium (Eu) as an activator, or potassium silicofluoride (KSF, K 2 SiF 6 Calcium fluoride (CaF 2 ) materials may also be used.
[0024] β-SiAlON:Eu converts blue light into green light, and K 2 SiF 6 Mn converts blue light into red light. The content of each phosphor may be determined so as to arbitrarily set the conversion rate of blue light of the light emitting element 20 depending on the application. A plurality of wavelength conversion members 50 may be arranged in a stacked manner. When only the light emitted from the light emitting element 20 is used, the wavelength conversion member 50 may be omitted. Dummy glass or the like may also be used.
[0025] In this embodiment, the wavelength conversion of the light emitted from the light emitting element 20 is performed using the plate-shaped wavelength conversion member 50. However, instead of the adhesive 40, the wavelength conversion member 50, and the adhesive 60 described below, a resin material containing the phosphor particles may be used. In this case, the light emission surface of the light emitting element 20 and the bottom surface of the light collecting member 70 are bonded together by the resin material containing the phosphor particles.
[0026] (Light collecting member) The light collecting member 70 is a light-transmitting member integrally formed with a base 71 having a flat bottom surface and a plurality of frustum portions 72 extending upward from the upper surface of the base 71. The light collecting member 70 is a light guiding member that guides light entering from the lower surface to the light exit region 72S.
[0027] In this embodiment, the light collecting member 70 is made of silicone resin.
[0028] The bottom surface of the base 71 is disposed so as to cover the upper surface of the wavelength conversion member 50 via a light-transmitting adhesive 60 such as silicone resin. That is, the bottom surface of the base 71 is the light incidence surface of the light collecting member 70.
[0029] The frustum portions 72 are arranged on the upper surface of the base portion 71. In this embodiment, the frustum portions 72 are arranged on the upper surface of the base portion 71 in three rows and three columns.
[0030] The frustum portion 72 guides the light incident from the light incident surface of the base portion 71 by a light reflective covering member 90 described later, and emits the light from a light exit region 72S, which is the upper surface. That is, in the light collecting member 70, each of the frustum portions 72 serves as a light guiding portion.
[0031] In addition, the side surface of the frustum portion 72 has an arc-shaped cross section that is concave outward from the outer edge of the bottom surface to the outer edge of the light exit region 72S.
[0032] 3, in this embodiment, the light exit region 72S has a circular upper surface shape. On the upper surface of the base 71, rectangular regions AR are defined by equally dividing the upper surface by lattice-like equal division lines, and frustum portions 72 are formed on the rectangular regions AR. Each of the frustum portions 72 is formed with the rectangular region AR as its bottom surface. That is, the frustum portions 72 have the rectangular region AR as their bottom surface and the circular light exit region 72S as their top surface. Therefore, there is no flat surface on the upper surface of the base 71 of the light collecting member 70.
[0033] In addition, the frustum portion 72 is formed so that the center point of the bottom surface (rectangular area AR) coincides with the center point of the light exit area 72S when viewed from above.
[0034] (optical structure) 1 and 2, the optical structure 80 is integrally formed with a plurality of lens portions 81 optically coupled directly above the light emission region 72S of the light collecting member 70 and a support portion 82 supporting the plurality of lens portions 81. In this embodiment, a silicone resin formed by injection molding or the like is used for the optical structure 80. The optical structure 80 is bonded onto the light emission region 72S using, for example, a light-transmitting adhesive (not shown) such as silicone resin.
[0035] 4, in this embodiment, each of the lens portions 81 is a convex lens having an elliptical hemispherical shape with the long axis extending in the vertical direction in the figure. The support portion 82 is formed so as to connect the lower ends of the side surfaces of each of the lens portions 81. That is, the midpoint O of the lens portion 81 is located on the bottom surface of the optical structure 80.
[0036] Further, the midpoint O of the lens portion 81 (the center point of the bottom surface of the lens portion 81) and the center point of the light exit region 72S of the light collecting member 70 are arranged at positions that coincide with each other. In other words, the centers of the corresponding light exit regions 72S are arranged on the optical axes of the corresponding lens portions 81 of the optical structure 80.
[0037] 4, light LM1 incident on the midpoint O of the lens portion 81 is emitted in a direction substantially perpendicular to the light emitting device 1. Light LM2 incident on the lens portion 81 from the outer end of the light emission region 72S of the light collecting member 70 is emitted slightly obliquely, but a light collecting effect is obtained.
[0038] It is preferable that the diameter φT of the light exit region 72S of the light collecting member 70, relative to the diameter φL of the bottom surface of the lens portion 81, be such that (1 / 4)φL<φT<(1 / 2)φL.
[0039] Specifically, in order to suppress the oblique emission angle of light LM2 incident on the lens portion 81 from the outer end of the light emission region 72S of the focusing member 70, it is preferable that the diameter φT of the light emission region 72S is less than 1 / 2 the diameter φL of the bottom surface of the lens portion 81.
[0040] In order to reduce the loss of light within the frustum portion 72, it is preferable that the diameter φT of the light exit region 72S exceeds ¼ of the diameter φL of the bottom surface of the lens portion 81.
[0041] In addition, in this embodiment, the case where the adjacent lens portions 81 of the optical structure 80 do not overlap each other has been described, but the adjacent lens portions 81 may be formed to partially overlap each other. In this case, it is preferable to provide the overlapping portion within a range in which light incident on one lens portion 81 does not enter the adjacent other lens portion 81 through the overlapping portion, or light emitted from one lens portion 81 does not re-enter the adjacent other lens portion 81.
[0042] In addition, in this embodiment, the lens portion 81 of the optical structure 80 is an elliptical hemisphere, but the lens portion 81 may be a parabolic hemisphere. The shape of the lens portion 81 can be designed arbitrarily depending on the light distribution characteristics of the emitted light from the light emitting device 1, for example, the half-value angle, etc.
[0043] In this embodiment, the light collecting member 70 and the optical structure 80 may be made of other materials such as thermosetting resins or thermoplastic resins, such as epoxy resins, acrylic resins, and polycarbonate resins. Thermoplastic amorphous fluororesins, heat-softening glass-based materials, and the like may also be used. Thermosetting resins can be formed by injection molding using a mold, and thermoplastic resins and glass-based materials can be formed by press molding using a mold. When fluororesins are used, the surfaces of the light collecting member 70 and the surfaces of the optical structure 80, excluding the lens portion 81 and the upper surface of the support portion 82 connected to the lens portion 81, are plasma-treated to modify the surfaces so that the adhesive 60 and the covering member 90 can be bonded.
[0044] Moreover, the optical structure 80 is adhered onto the light exit region 72S using, for example, a light-transmitting adhesive (not shown). When the light collecting member 70 and the optical structure 80 are formed of the same material, it is preferable to use an adhesive whose base material is the same type of resin as the light collecting member 70 and the optical structure 80. When the light collecting member 70 and the optical structure 80 are formed of different materials, it is preferable to use an adhesive whose base material is a resin whose refractive index is approximately the same (or close) to that of the light collecting member 70 and the optical structure 80.
[0045] Furthermore, when both the light collecting member 70 and the optical structure 80 are made of a thermoplastic resin or a glass-based material, they can be directly joined by friction fusion joining, thermocompression joining, laser welding or the like.
[0046] In particular, by performing direct bonding, it is possible to eliminate the optical interface between the light output region 72S and the optical structure 80, and it is possible to reduce the optical loss due to the interface.
[0047] (Covering material) The coating member 90 is a light-reflective coating member filled in the cavity of the substrate 10. In this embodiment, titanium oxide (TiO 2 A light-transmitting medium resin material such as a silicone resin containing light-scattering particles such as zirconia particles is used. As the light-scattering particles, composite ceramic particles containing two or more of alumina, zirconia, and silica can be used. The composite ceramic particles themselves have high reflective properties, so they are not affected by the refractive index of the medium resin material and are therefore preferable as light-scattering particles.
[0048] The covering member 90 covers the exposed surface of the bottom surface of the light-emitting element 20 and the region extending from the side surface to the side surface of the frustum portion 72 of the light-collecting member 70. This causes the light emitted from the side surfaces of the light-emitting element 20, the wavelength conversion member 50, and the light-collecting member 70 to be reflected inward.
[0049] (Comparative Example) FIG. 5 is a diagram showing a cross section of a light emitting device 1A according to a comparative example of the present invention.
[0050] The light emitting device 1A of the comparative example uses the same substrate 10, light emitting element 20, wavelength conversion member 50 and respective bonding members 30, 40 as those of the light emitting device 1 of the embodiment.
[0051] The light emitting device 1A of the comparative example is different from the light emitting device 1 of the embodiment in that the light condensing member 70 and the optical structure 80 are not provided. In the light emitting device 1A of the comparative example, the height of the wall portion of the substrate 10 is approximately the same as the height of the upper surface of the wavelength conversion member 50.
[0052] (Comparison of light distribution characteristics between the comparative example and this embodiment) Fig. 6 shows a light distribution characteristic diagram of emitted light from a light emitting device 1A according to a comparative example, and Fig. 7 shows a light distribution characteristic diagram of emitted light from a light emitting device 1 according to an example.
[0053] The vertical lines in Figures 6 and 7 indicate the optical axis direction of the light emitting devices 1 and 1A. Also, the sector-shaped ranges in Figures 6 and 7 indicate the luminous flux ratio in the range from -90° to +90° with respect to the optical axis when the maximum luminous flux at a given angle is taken as 100%.
[0054] 6, the light emitted from the light emitting device 1A according to the comparative example had light distribution characteristics almost equivalent to the Lambertian light distribution. That is, the light emitted from the light emitting device 1A according to the comparative example had an angular range in which the light was 50% or more of the maximum luminous flux, i.e., a half-value angle of about 120°.
[0055] 7, it can be seen that the light emitted from the light emitting device 1 according to the example is emitted within a narrower angle range than the light emitting device 1A according to the comparative example. Specifically, the half-value angle of the light emitted from the light emitting device 1 according to the example was about 54°.
[0056] Furthermore, the amount of luminous flux within a range of 54° from the optical axis of the emitted light of the light emitting device 1 according to the embodiment was increased by about 10% compared to the amount of luminous flux within a range of 54° from the optical axis of the emitted light of the light emitting device 1A according to the comparative example. In other words, the light emitting device 1 according to the embodiment can narrow the angle of the emitted light from the light emitting device 1 while suppressing the loss of the emitted light of the light emitting element 20 within the half-value angle range of 54°.
[0057] As described above, the light emitting device 1 of the embodiment has a light collecting member 70 that collects light emitted from the upper surface of the wavelength conversion member 50 to a light emission region 72S by the frustum portion 72, and emits light from the light emission region 72S to the outside of the light emitting device 1 via an optical structure 80 including an elliptical hemispherical lens portion 81. This makes it possible for the light emitting device 1 of the embodiment to achieve a narrow angle of emitted light while reducing loss of light emitted from the light emitting element 20.
[0058] (Variation 1) FIG. 8 is a cross-sectional view of a light collecting member 70A which is a first modified example of the light collecting member 70 of the light emitting device 1 of the embodiment.
[0059] The configuration other than the light collecting member 70A is similar to that of the light emitting device 1 of the embodiment, and therefore the description thereof will be omitted.
[0060] In the light emitting device 1 of the embodiment, the side surface of the light collecting member 70 is covered with the covering member 90 made of a light reflective resin material, and the light is guided to the light exit region 72S.
[0061] The light collecting member 70A of the modified example has a silicon oxide (SiO 2 ) and aluminum oxide (Al 2 O 3 ) are repeatedly stacked to form a dielectric multilayer film RE.
[0062] The dielectric multilayer film RE can increase the light reflectance compared to the covering member 90 containing light scattering particles. Therefore, the loss of light can be reduced when the light incident from the bottom surface of the light collecting member 70A is guided to the light exit region 72S. This makes it possible to increase the luminous flux of the light exiting from the lens portion 81 of the optical structure 80.
[0063] The dielectric multilayer film RE can be formed by atomic layer deposition (ALD) after masking the bottom surface of the light collector 70 and the light emission region 72S.
[0064] Furthermore, when using the light collecting member 70A having the dielectric multilayer film RE formed on the side surface, the covering member 90 may be filled from the bottom surface of the cavity of the substrate 10 to at least the upper end of the side surface of the wavelength conversion member 50. Furthermore, similar to the light emitting device 1 of the embodiment, the covering member 90 may be filled to cover the side surface of the light collecting member 70A.
[0065] (Variation 2) FIG. 9 is a cross-sectional view of a light emitting device 2 which is a modified example 2 of the light emitting device 1 of the embodiment.
[0066] In the light emitting device 2 of the second modification, the substrate 10 is not used, and the anode electrode 22 and the cathode electrode 23 of the light emitting element 20 are used as mounting electrodes that directly electrically connect to the outside. In other words, the light emitting device 2 of the second modification is a chip size package type light emitting device.
[0067] The light emitting device 2 of the second modification can be manufactured, for example, by performing a dicing process twice.
[0068] Specifically, a plate-shaped member having wavelength conversion members 50 and light collecting members 70 similarly formed in a continuous matrix on a wafer on which light-emitting elements 20 are formed in a continuous matrix is adhered in sequence via adhesives 40, 60, and then a first dicing step is performed with a first dicing blade.
[0069] Next, a plate-like member on which the optical structures 80A are continuously formed in a matrix is adhered or joined onto the light collecting member 70 on the wafer that has been subjected to the first dicing.
[0070] Next, a covering member 90A is formed by transfer molding or the like so as to fill the gaps formed in the first dicing process and the gaps between the frustum portions 72 of the light collecting member .
[0071] Thereafter, a second dicing step is performed using a second dicing blade having a narrower blade width than the first dicing blade, thereby making it possible to manufacture the light emitting device 2 of the second modified example.
[0072] The blade width of the first dicing blade and the second dicing blade is selected so that no light leaks from the side surfaces of the light emitting device 2 after manufacture.
[0073] (Variation 3) FIG. 10 is a cross-sectional view of a light emitting device 3 which is a modified example 3 of the light emitting device 1 of the embodiment.
[0074] The light emitting device 3 of the modified example 3 is a chip size package type light emitting device like the light emitting device 2 of the modified example 2. The light emitting device 3 of the modified example 3 differs from the modified example 2 in that the light emitting element 20 is bonded onto a flat device substrate 10A.
[0075] The device substrate 10A is an insulating semiconductor substrate such as non-doped silicon. The device substrate 10A includes a pair of substrate electrodes 12 and 13 made of metal capable of supplying power to the light emitting element 20 from the outside. The anode electrode 22 and the cathode electrode 23 of the light emitting element 20 are electrically connected to the substrate electrodes 12A and 13A formed on the device substrate 10A, respectively, via an element bonding member 30 such as a gold-tin alloy (Au-Sn).
[0076] A p-type impurity diffusion region 10P is formed on the bottom surface side inside the device substrate 10A so as to contact the substrate electrode 12A. An n-type impurity diffusion region 10N is formed on the top surface side inside the device substrate 10A so as to contact the substrate electrode 13A. The p-type impurity diffusion region 10P and the n-type impurity diffusion region 10N are formed so as to contact (join) each other inside the device substrate 10A.
[0077] That is, inside the device substrate 10A, the substrate electrodes 12A and 13A are electrically connected to the light emitting element 20 via a Zener diode ZD that is connected in reverse polarity.
[0078] In general, in a gallium nitride based light emitting element that emits blue light, it is preferable to provide a Zener diode for protection against application of reverse voltage.
[0079] As described above, by forming the Zener diode ZD inside the device substrate 10A, in the chip size package type light emitting device 3, it is not necessary to provide a separate Zener diode outside the light emitting device 3. This provides the effect of improving the mounting density of the light emitting device 3, for example. Note that a varistor, a capacitor, etc. may be provided in addition to the Zener diode. Furthermore, a transistor circuit that controls the light emission of the light emitting element 20 may be built in.
[0080] The method for manufacturing the light emitting device 3 of the third modification is basically the same as that for the light emitting device 2 of the second modification.
[0081] Specifically, the light emitting element 20, the wavelength conversion member 50, and the light collecting member 70 are mounted in this order using a die bonder or the like on a wafer on which the device substrates 10A are continuously formed in a matrix.
[0082] Next, a plate-like member on which the optical structures 80A are continuously formed in a matrix is adhered or joined onto the light collecting member .
[0083] Next, a liquid coating material 90A before hardening is injected through a hole provided in a part of the optical structure 80A so as to fill the gap between the upper surface of the device substrate 10A and the bottom surface of the plate-like member of the optical structure 80A, and then the coating material 90A is formed by thermal hardening or the like.
[0084] Thereafter, a dicing process is performed to separate the light emitting device 3 of the third modified example, thereby making it possible to manufacture the light emitting device 3 of the third modified example.
[0085] As described above, the described embodiments are not intended to limit the scope of the invention. The described embodiments can be implemented in various forms such as modified examples 1 to 3, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. For example, a frame having the height of the lens body 81 can be provided on the peripheral portion of the optical structure portion 80 of the light-emitting device 1 of the first embodiment, and the covering member 90 can be filled up to the height of the frame. Also, in modified example 1, the covering member 90 can be covered up to the height of the base portion 71A of the light-collecting member 70A. As described above, the present invention is included in the scope and gist of the invention, and is included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]
[0086] 1 Light emitting device 10 Substrate 20 Light emitting element 30 Element bonding material 40, 60 Adhesive 50 Wavelength conversion material 70 Light collecting member 71 Base 72 Frustum part 80 Optical structure 81 Lens body 82 Support part 90 Covering material
Claims
1. A light-emitting element having a rectangular parallelepiped shape, with a pair of element electrodes consisting of a cathode and an anode formed on its lower surface, and a light-emitting surface on its upper surface facing the element electrode surface, A plate-shaped wavelength conversion member is disposed on the upper surface of the light-emitting element, A light-gathering member is disposed on the wavelength conversion member via an adhesive and has a plurality of light-emitting regions spaced apart from each other on the surface opposite to the surface facing the light-emitting surface, A light-emitting device having an optical structure having a plurality of convex lens portions that are convex upward, each of which is formed so as to overlap with each of the plurality of light-emitting regions when viewed from above, The light-collecting member comprises a rectangular base that covers the light-emitting surface of the light-emitting element when viewed from above, and a light-guiding portion having a plurality of frustum portions, each extending upward from the upper surface of the base and tapering upward. The region from the side surface of the light-emitting element to the side surface of the frustum portion is covered with a covering member. A light-emitting device characterized in that the upper surface of each of the plurality of frustum portions is the light-emitting region.
2. The light-emitting element is mounted on a flat portion of a substrate having an opening recess that opens upward, The light-emitting device according to claim 1, characterized in that the side of the covering member opposite to the side of the light-emitting element covers a wall portion that extends upward from the upper surface of the flat plate portion that forms the opening recess.
3. The pair of element electrodes provided on the lower surface of the light-emitting element are exposed, The light-emitting device according to claim 1, characterized in that the covering member has an exposed side opposite to the side in contact with the side of the light-emitting element, and is the outer peripheral side of the light-emitting device.
4. The light-emitting device according to any one of claims 1 to 3, characterized in that both the light-collecting member and the optical structure are made of thermoplastic resin or glass-based material and are directly joined together.
5. The light-emitting device according to claim 1, characterized in that the plurality of lens portions of the optical structure have the shape of an ellipsoidal hemisphere or a parabolic hemisphere.
6. Each of the plurality of frustum portions has an arc-shaped cross-section on its side that is concave outward from the outer edge of the bottom surface to the outer edge of the light emission region, and the upper surface is the light emission region. The midpoints of each of the aforementioned multiple convex lens portions and the center points of each of the aforementioned light emission regions are positioned to coincide with each other. The covering member covers the bottom surface of the optical structure. The light-collecting portion has a base whose bottom surface is a light incident surface into which light emitted from the light-emitting element and having a Lambathian light distribution characteristic is incident, and also consists of a light-guiding member that guides the light incident from the bottom surface of the base to each of the light-emitting regions of the frustum portion. When the diameter of the bottom surface of each of the multiple convex lens portions is φL, and the diameter of each of the light emission regions corresponding to each of the multiple convex lens portions is φT, the following relationship (1) is observed. (1 / 4)φL<φT<(1 / 2)φL... (1) A light-emitting device according to any one of claims 1 to 3.
7. The light-emitting device according to any one of claims 1 to 3, characterized in that the wavelength conversion member is a ceramic plate or resin layer containing a phosphor.
8. The light-emitting device according to any one of claims 1 to 3, characterized in that the covering member has light reflectivity.
9. The light-emitting device according to any one of claims 1 to 3, characterized in that it has an optical multilayer film covering each of the sides of the plurality of frustum portions.
10. The apparatus has a silicon substrate having a pair of substrate electrodes that are electrically joined to the pair of element electrodes of the light-emitting element, The light-emitting device according to any one of claims 1 to 3, characterized in that, within the device substrate, the pair of substrate electrodes are electrically connected via a p-type impurity diffusion region and a p-type impurity diffusion region formed to have opposite polarity to the light-emitting element.