Integrated configuration of different light emitting structures on the same substrate

By integrating semiconductor structures on a single substrate with GaN buffer layers and p-type dopants, the challenges of producing small, high-density LEDs for advanced displays are addressed, achieving efficient and cost-effective high-resolution displays with integrated color generation.

JP2024170399AActive Publication Date: 2024-12-10GOOGLE LLC
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Patent Information

Application Number
JP2024126060
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2020-04-06
Filing Date
2024-08-01
Publication Date
2024-12-10
Estimated Expiration
2040-04-10

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Abstract

To provide technique and a device for manufacturing a large number of compact light emitting elements by integrating semiconductor structures for generating light of different colors on the same substrate.SOLUTION: A device includes a substrate 510 having one or more buffer layers 505 composed of a material including GaN, and generates light. The device also includes a plurality of light emitting structures 520a, 520b, 520c that are epitaxially grown on the same surface of an uppermost buffer layer of the substrate 510, each light emitting structure having an active region 530 that is parallel to the surface and terminated in a lateral direction, and the active regions of the different light emitting structures being configured to directly generate light of different colors. The device also includes a p-type doped layer 540 that is disposed on the active region 530 of each light emitting structure and composed of a material including GaN. The device may be connected to a part of a light field display or a backplane of a light field display.SELECTED DRAWING: Figure 5A
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Citation Information

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