Light-emitting device
A field effect transistor with two overlapping gates and a capacitive element stabilizes current flow by controlling threshold voltage, addressing the challenge of voltage variations in conventional semiconductor devices and preventing malfunctions.
JP2024170596AActive Publication Date: 2024-12-10SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2024155115
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2011-09-16
- Filing Date
- 2024-09-09
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2032-09-11
Smart Images
Figure 2024170596000001_ABST
Abstract
To suppress malfunctions.SOLUTION: A semiconductor device includes a field-effect transistor, a switch, and a capacitive element. The field-effect transistor has a first gate and a second gate that are superposed on each other via a channel formation region. A value of threshold voltage varies depending on potential of the second gate. The switch has a function of controlling whether or not one of a source and a drain of the field-effect transistor, and the second gate in the field-effect transistor are brought into a conduction state. The capacitive element has a function of holding voltage between the second gate in the field-effect transistor and the other of the source and the drain in the field-effect transistor.SELECTED DRAWING: Figure 1
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Citation Information
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