Bonding apparatus

Abstract

To replace air around a bonding portion between a semiconductor chip and a substrate with atmospheric gas at a high level.SOLUTION: The present disclosure relates to a bonding apparatus 3 including: a bonding stage 4 that supports a semiconductor wafer 2 (substrate); a bonding head 5 that holds a semiconductor chip 1; a cover member 7 that is disposed above the bonding stage 4; and stage-side gas supply means 8 that supplies atmospheric gas between the cover member 7 and a substrate support 4a. The stage-side gas supply means 8 includes a nozzle 13 that circulates the atmospheric gas, and a straightening guide 14 that is provided between the cover member 7 and the bonding stage 4. An injection port 13a of the nozzle 13 is provided at a position adjacent to one side portion with respect to the substrate support 4a, the injection port 13a is formed to have a width wider than that of the substrate supported by the substrate support 4a, and a gap g is formed between an upper portion of the straightening guide 14 and the cover member 7.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a bonding apparatus, and more particularly to a bonding apparatus that circulates an atmospheric gas around a bonding position between a semiconductor chip and a substrate when the semiconductor chip is bonded to the substrate. [Background technology]

[0002] Conventionally, a bonding apparatus is known that includes a bonding stage that supports a substrate on its upper surface, a bonding head that holds a semiconductor chip, a cover member that is disposed above the bonding stage and has an opening through which the bonding head can pass, and a stage-side gas supply means that supplies an atmospheric gas such as nitrogen gas or argon gas between the cover member and the substrate support part (Patent Document 1). According to Patent Document 1, by circulating atmospheric gas between the cover member and the bonding stage, the atmospheric gas is filled around the bonding position between the semiconductor chip and the substrate, thereby preventing poor bonding due to oxidation when the molten bumps solidify. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 7157367 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the case of the configuration of Patent Document 1, the nozzles for injecting the atmospheric gas are positioned so as to surround the substrate, so that a vortex is generated between the cover member and the substrate support part due to the difference in the flow rate of the atmospheric gas discharged from each nozzle, causing the problem that the external atmosphere is drawn in and the oxygen concentration does not decrease sufficiently. In view of the above problems, the present invention provides a bonding apparatus capable of replacing the atmosphere around the bonding position between a semiconductor chip and a substrate with an atmospheric gas to a high degree. [Means for solving the problem]

[0005] That is, the bonding apparatus according to the invention of claim 1 is a bonding apparatus comprising: a bonding stage having a substrate support portion formed on an upper surface thereof for supporting a substrate; a bonding head for holding a semiconductor chip; a cover member disposed above the bonding stage and having an opening through which the bonding head can pass; and stage-side gas supply means for supplying atmospheric gas between the cover member and the substrate support portion, the stage-side gas supply means includes a gas supply source that supplies an atmospheric gas, a nozzle that circulates the atmospheric gas from the gas supply source, and a flow guide that is provided between the cover member and the bonding stage; an ejection port of the nozzle is provided at a position adjacent to one side of the substrate support portion, and the ejection port is formed to be wider than the substrate supported by the substrate support portion; The straightening guide comprises a main guide portion that is arranged along the injection port and stands on the opposite side of the substrate support portion, and side guide portions that are arranged from both ends of the main guide portion toward the substrate support portion, and is further characterized in that a gap is formed between the upper part of the straightening guide and the cover member. Effect of the Invention

[0006] According to the above invention, by providing the nozzle outlet on one side of the substrate support portion and straightening the atmospheric gas sprayed from the outlet by the straightening guide, a unidirectional flow of atmospheric gas can be formed to cover the substrate supported by the substrate support portion. This makes it possible to prevent as much as possible the entrainment of the external atmosphere due to the generation of vortexes, and to replace the air around the bonding position between the semiconductor chip and the substrate with the atmospheric gas to a high degree. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a side view of the bonding apparatus according to the present embodiment. [Diagram 2] Top view of the bonding device [Diagram 3] Side view explaining the bonding head [Figure 4] FIG. 1 is a diagram illustrating a head-side gas supply means. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The illustrated embodiment will now be described. FIG. 1 shows a bonding apparatus 3 that bonds a semiconductor chip 1 to a semiconductor wafer 2 as a substrate, and is equipped with a bonding stage 4 that supports the semiconductor wafer 2, a bonding head 5 that holds the semiconductor chip 1, and a moving means 6 that moves the bonding stage 4 and the bonding head 5 relative to one another. In addition, a cover member 7 having an opening 7a through which the bonding head 5 can pass is provided above the bonding stage 4, and a stage-side gas supply means 8 supplies atmospheric gas between the cover member 7 and the bonding stage 4. Furthermore, the bonding head 5 is provided with a head-side gas supplying means 9 (see FIG. 3) for supplying an atmospheric gas to the periphery of the semiconductor chip 1 held by the bonding head 5. The bonding apparatus 3 having the above configuration is controlled by a control means (not shown) such as a computer.

[0009] The semiconductor chip 1 has a substantially square shape, and is provided with a plurality of electrodes on the back surface, with bumps made of solder formed on each electrode. The semiconductor wafer 2 has a disk shape, and is capable of bonding a plurality of semiconductor chips 1. In addition, at positions where the semiconductor chips 1 are bonded, electrodes are provided in the same arrangement as the electrodes of the semiconductor chip 1, and bumps are formed on each electrode. The bonding device 3 moves the bonding stage 4 and the bonding head 5 relative to one another to bring the semiconductor chip 1 into close contact with the required position of the semiconductor wafer 2 supported by the bonding stage 4, and melts the bumps in that state, thereby bonding the semiconductor chip 1 and the semiconductor wafer 2 together. In the drawings explaining this embodiment, for the purpose of explanation, the size ratio between the semiconductor chip 1 and the semiconductor wafer 2 is different from the actual ratio, and the semiconductor chip 1 is shown larger.

[0010] The bonding stage 4 comprises a substrate support portion 4a that supports the semiconductor wafer 2 and an outer periphery guide 4b that surrounds the substrate support portion 4a, and these can be moved horizontally by an XY stage 11 that constitutes the moving means 6. 2, the upper surface of the substrate support portion 4a has a circular shape with a larger diameter than the semiconductor wafer 2. The substrate support portion 4a is capable of suction-holding the semiconductor wafer 2 on its upper surface by a suction means (not shown). The outer periphery guide 4b is provided so as to surround the outside of the substrate support portion 4a, and its upper surface is formed at the same height as the substrate support portion 4a. The size of the outer periphery guide 4b is set to a size that does not cause turbulence in the atmospheric gas around the semiconductor wafer 2 when the atmospheric gas described below is caused to flow.

[0011] The XY stage 11 is composed of a stage base 11a provided below the substrate support portion 4a, a table 11b that holds the stage base 11a, and an X-direction driving means 11c and a Y-direction driving means 11d provided on the underside of the table 11b. The X-direction driving means 11c and the Y-direction driving means 11d are well known and therefore will not be described in detail, but are each composed of a pair of rails and a slider arranged perpendicular to each other.

[0012] The cover member 7 is a plate-shaped member fixed above the bonding stage 4 by a fixing means (not shown), and has an area sufficient to cover the movement range of the semiconductor wafer 2 moved by the XY stage 11. The cover member 7 has an opening 7a through which the bonding head 5 can pass, and when the bonding head 5 is lowered, a gap is formed between the opening 7a and the bonding head 5 such that no interference occurs.

[0013] The stage-side gas supply means 8 includes a gas supply source 12 that supplies atmospheric gas, a nozzle 13 that circulates the atmospheric gas from the gas supply source 12 and has an outlet 13a formed in the bonding stage 4, a straightening guide 14 that guides the atmospheric gas ejected from the outlet 13a of the nozzle 13 to the substrate support portion 4a, and an opposing guide 15 provided at a position opposite the straightening guide 14 with the substrate support portion 4a in between. The gas supply source 12 supplies an atmospheric gas, specifically, an inert gas such as N2 gas or argon gas, and a reducing gas such as hydrogen or formic acid, if necessary.

[0014] The nozzle 13 is fixed to a table 11b of the XY stage 11 and is provided so as to be movable integrally with the substrate support portion 4a and the outer periphery guide 4b. The nozzle 13 is provided only on the left side of the substrate support portion 4a in the figure. The nozzle 13 is a cylindrical metallic member, and is composed of a supply part 13b connected to the gas supply source 12, a discharge part 13c having the injection port 13a on the upper surface of the outer circumferential guide 4b, and a main body part 13d provided between the supply part 13b and the discharge part 13c. In the side view shown in FIG. 1, the supply unit 13b is provided in a horizontal direction, and the atmospheric gas supplied from the gas supply source 12 flows in horizontally from the left side in the figure. The discharge portion 13c is provided in a vertical direction, and the injection port 13a formed at the upper end of the discharge portion 13c is formed at the same height as the upper surfaces of the substrate support portion 4a and the outer periphery guide 4b. The main body portion 13d is arranged to connect an end of the supply portion 13b and an end of the discharge portion 13c, and specifically, is arranged diagonally upward from the supply portion 13b located at the lower left in FIG. 1 to the discharge portion 13c located at the upper right in FIG. According to the nozzle 13 having the above-mentioned configuration, the atmospheric gas that flows into the supply portion 13b and circulates horizontally flows diagonally upward at the connection portion between the supply portion 13b and the main body portion 13d, and then flows upward at the discharge portion 13c. From the injection port 13a formed at the end of the discharge portion 13c, the atmospheric gas is injected vertically upward and collides perpendicularly with the cover member 7 provided at the upper portion.

[0015] In the plan view shown in FIG. 2, the longitudinal width of the ejection port 13a is set to be wider than the width of the semiconductor wafer 2 supported by the substrate support portion 4a, and more specifically, is set to be wider than the diameter of the substrate support portion 4a. In this embodiment, the injection port 13a has an elongated rectangular shape, but it may also be arc-shaped to match the shape of the substrate support portion 4a, or may be roughly L-shaped with the central portion protruding in a direction away from the substrate support portion 4a.

[0016] In FIG. 2, the width of discharge portion 13c is set wider than the width of supply portion 13b, whereas the main body portion 13d has a tapered shape expanding from the supply portion 13b toward discharge portion 13c in a plan view. Here, the tapered shape of the main body portion 13d has an arc shape in which the bulging portions approach each other in a plan view, which makes it possible to gradually change the increase in the flow path area, which will be described later. 1, the width in the short-side direction of the injection port 13a of the discharge portion 13c of the nozzle 13 is set to be narrower than the height of the supply portion 13b, so that the main body portion 13d has a tapered shape that narrows from the supply portion 13b toward the discharge portion 13c in a side view. By giving the main body portion 13d of the nozzle 13 this shape, the cross-sectional opening of each portion of the main body portion 13d gradually increases from the supply portion 13b to the discharge portion 13c, thereby preventing the formation of a vortex due to the atmospheric gas while flowing through the main body portion 13d.

[0017] Next, a mesh-like member 16 serving as a resistance member is attached to the injection port 13a of the nozzle 13. This mesh-like member 16 may also be a member having a configuration in which a large number of holes are drilled in a metal plate, such as a punching metal. By providing the mesh member 16 at the injection port 13a, a pressure loss occurs when the atmospheric gas passes through the mesh member 16, and the inside of the nozzle 13 can be made to have a positive pressure relative to the external atmosphere. This makes it possible for the atmospheric gas to be ejected from the ejection port 13a through the nozzle 13 with a uniform pressure from the entire ejection port 13a.

[0018] The flow straightening guide 14 comprises a main guide portion 14a erected along the injection port 13a on the opposite side of the substrate support portion 4a, and side guide portions 14b provided from both ends of the main guide portion 14a toward the substrate support portion 4a, and a gap g is formed between the upper portions of the main guide portion 14a and the side guide portions 14b and the cover member 7. The main guide portion 14a is provided at a position spaced a predetermined distance from the injection port 13a, and a bottom plate 14c is provided between the main guide portion 14a and the injection port 13a at the same height as the substrate support portion 4a. The side guide portion 14b has parallel sections extending in parallel from both ends of the main guide portion, and is provided with divergent sections 14d formed so as to gradually separate from the ends of the parallel sections.

[0019] The opposing guide 15 is configured symmetrically with respect to the straightening guide 14 across the substrate support portion 4a, and comprises a main guide portion 15a erected on the opposite side of the substrate support portion 4a and side guide portions 15b provided at both ends of the main guide portion 15a, and a gap g is formed between the cover member 7. A bottom plate 15c is provided between the main guide portion 15a and the outer circumferential guide 4b at the same height as the substrate support portion 4a, and the tip of the parallel section of the side guide portion 15b is formed of a flared section 15d.

[0020] According to the stage-side gas supply means 8 having the above-mentioned configuration, the flow of the atmospheric gas shown in FIG. 1 and FIG. In other words, when ambient gas is supplied from the gas supply source 12 to the nozzle 13, in the side view shown in Figure 1, the ambient gas that flows through the nozzle 13 is sprayed vertically upward from the nozzle outlet 13a formed at the same height as the substrate support portion 4a. At this time, since the main body portion 13d is formed in a tapered shape and the cross-sectional opening is formed so as to gradually increase in size, the generation of vortexes due to flow rate differences inside the nozzle 13 is suppressed, and the ambient gas is sprayed in a rectified state. Furthermore, the mesh member 16 is provided in the nozzle 13a, and the inside of the nozzle 13 is at a positive pressure relative to the external atmosphere, so that the atmospheric gas is injected from the entire nozzle 13a with uniform pressure. The atmospheric gas sprayed from the nozzle 13a in this manner diffuses horizontally when it collides with the cover member 7, but most of it (e.g., about 80%) is guided by the straightening guide 14 and flows toward the substrate support part 4a on the right side of the figure. On the other hand, the atmospheric gas that diffuses toward the left in the figure is discharged to the outside of the straightening guide 14 through the gap g between the straightening guide 14 and the cover member 7, thereby preventing the external atmosphere located to the left of the straightening guide 14 in the figure from entering between the cover member 7 and the bonding stage 4 through the gap g.

[0021] On the other hand, in the plan view shown in FIG. 2, the above-mentioned ejection port 13a is formed to be wider than the substrate support portion 4a, so that the ambient gas ejected from the above-mentioned ejection port 13a and then guided by the above-mentioned flow straightening guide 14 forms a unidirectional flow that covers the entire semiconductor wafer 2 supported by the above-mentioned substrate support portion 4a. Furthermore, of the atmospheric gas injected from the injection port 13a, the atmospheric gas that flows along the side guide portion 14b of the flow straightening guide 14 flows along the divergent section 14d of the side guide portion 14b, and is thereby discharged in a diffused state from the flow straightening guide 14. However, the divergent section 14d is formed in a shape that prevents the diffused atmospheric gas from forming a vortex, and prevents the external atmosphere from being drawn in around the substrate support portion 4a. Furthermore, by providing the opposing guide 15 on the opposite side of the flow straightening guide 14 beyond the substrate support portion 4a, the atmospheric gas that has flowed beyond the substrate support portion 4a can be contained in a straightened state. The atmospheric gas contained in the opposing guide 15 is discharged from the gap g between the upper part of the opposing guide 15 and the cover member 7 as shown in FIG. 1, thereby preventing the outside atmosphere from entering between the cover member 7 and the bonding stage 4 through the gap g.

[0022] 3 and 4 are diagrams for explaining the above-mentioned bonding head 5, the configuration of which is substantially the same as the bonding head 5 described in JP-A-2022-174463. The bonding head 5 includes a laser light irradiation means 21 that irradiates laser light L, a housing 23 that can be raised and lowered by a lifting means 22 that constitutes the moving means 6, a holding portion 24 that is provided at the bottom of the housing 23 and that adsorbs and holds the semiconductor chip 1 by negative pressure, and the head-side gas supply means 9 that supplies atmospheric gas around the adsorbed semiconductor chip 1. The laser light irradiation means 21 irradiates laser light L downward, and irradiates the laser light L onto the semiconductor chip 1 held by suction on the lower surface of the holding portion 24, thereby melting the bumps formed on the electrodes of the semiconductor chip 1 and the semiconductor wafer 2. Instead of the laser light irradiation means 21, known heating means such as a pulse heater may be used to melt the bumps formed on the electrodes of the semiconductor chip 1 and the semiconductor wafer 2. The lifting means 22 is configured to lift the bonding head 5 up and down (Z direction), and also includes a rotation mechanism (not shown) for rotating the semiconductor chip 1 together with the bonding head 5.

[0023] The holding portion 24 includes two transparent plates 24a and a holder 24b that holds the outer periphery of the plates 24a. The holding portion 24 is connected to negative pressure supply means 24c that supplies negative pressure. The two plates 24a are made of a transparent material such as quartz or glass that transmits the laser light L from the laser light irradiation means 21, and have an approximately square shape with an area larger than the semiconductor chip 1, as shown in Figure 4. Between the two plates 24a, a spacer 24d is provided in an endless manner along the outer periphery of the plates 24a, so that a space is formed between the two plates 24a. The holder 24b is arranged to surround the two plates 24a and the spacer 24d, and allows the laser light L irradiated by the laser light irradiation means 21 to pass through the two plates 24a from above to below.

[0024] Further, a negative pressure passage R communicating with the negative pressure supply means 24c is formed in the holder 24b and the spacer 24d, and the negative pressure supplied through the negative pressure passage Ra flows into the space formed between the plates 24a and 24a. Of the two plates 24a, the lower plate 24a has a through hole formed in the vertical direction at approximately the center, and the semiconductor chip 1 is adsorbed to the underside of plate 24a by negative pressure supplied to the space. The negative pressure supplying means 24c is controlled by the control means, and by controlling the supply of negative pressure, it is possible to suck and hold the semiconductor chip 1 and release it.

[0025] The head side gas supply means 9 is connected to the gas supply source 12, and is constituted by a frame 9a which further surrounds the outer periphery of a holder 24b constituting the holding portion 24. The frame 9a has a generally U-shaped cross section with the opening 7a facing inward, and a space is formed between the frame 9a and the outer peripheral surface of the holder 24b, endlessly surrounding the holder 24b, and the gas supply source 12 is connected to this space via a gas passage Rb formed in the frame 9a. In this embodiment, the gas passages Rb are provided at the four corners of the frame 9a as shown in FIG. 2, and are connected to the gas passages Rb from the gas supply source 12 via branch pipes. A slit S is formed between the lower part of the frame 9a and the outer peripheral surface of the holder 24b, and this slit S is connected to a space formed inside the frame 9a, so that the atmospheric gas supplied to the space is sprayed downward.

[0026] As shown in FIG. 4, the slits S are provided at positions corresponding to each side of the holding portion 24, which has an approximately square shape, and more specifically, are formed in an endless, approximately square shape along the outer peripheral edge of the holder 24b. In the bonding apparatus 3 of this embodiment, one slit S located on the left side of the figure is a wide slit SL, and the other three slits S are narrow slits SS. For example, the opening area of ​​the wide slit SL is set to about 10 times that of the narrow slit SS. With this configuration, it is possible to inject the atmospheric gas from the wide slit SL at a flow rate greater than that from the narrow slit SS.

[0027] According to the head-side gas supply means 9 having the above-mentioned configuration, the atmospheric gas supplied by the gas supply source 12 is supplied to the space formed inside the frame 9a through the gas passage Rb, and is sprayed downward from the slit S formed between the frame 9a and the holder 24b. As shown in FIG. 3, when the atmospheric gas injected from the slit S collides with the surfaces of the semiconductor wafer 2 and the bonding stage 4 located below, it flows so as to spread along the semiconductor wafer 2 and the bonding stage 4. At this time, in the bonding apparatus 3 of this embodiment, of the four slits S surrounding the holding portion 24, one is a wide slit SL and the others are narrow slits SS. With this configuration, as shown in FIG. 1, the ambient gas discharged from the wide slit SL with a large ejection flow rate flows toward the narrow slit SS with a small ejection flow rate, which is located opposite the wide slit SL across the semiconductor chip 1, and forms a flow that crosses the semiconductor chip 1 below the bonding head 5.

[0028] The operation of the bonding apparatus 3 having the above configuration will now be described. First, the control means moves chip supply means (relay stage) (not shown) below the bonding head 5, lowers the bonding head 5, and causes the holding portion 24 to suck and hold the semiconductor chip 1. On the other hand, the control means supplies the semiconductor wafer 2 to a required position on the bonding stage 4 by a substrate supply means (not shown), and the bonding stage 4 holds the semiconductor wafer 2 by suction. Next, the control means uses an imaging means (not shown) to photograph the semiconductor chip 1 held by suction on the bonding head 5 and the semiconductor wafer 2 held on the bonding stage 4, and recognizes their relative positional relationship. Thereafter, the moving means 6 moves the bonding head 5 and the bonding stage 4 relative to one another, fine-tuning the horizontal position of the semiconductor chip 1 and rotating it in the horizontal plane so that the positions of the electrodes of the semiconductor chip 1 and the electrodes of the semiconductor wafer 2 coincide with each other.

[0029] In this way, the bonding head 5 positions the semiconductor chip 1 above the bonding position on the semiconductor wafer 2, and then when the bonding head 5 descends, the bonding head 5 passes through the opening 7a of the cover member 7, and the held semiconductor chip 1 is positioned between the cover member 7 and the bonding stage 4. FIG. 1 shows a state in which a semiconductor chip 1 held by a bonding head 5 is positioned above the bonding position with a semiconductor wafer 2 supported by a bonding stage 4 (for example, a position where the gap between the bonding head 5 and the bonding stage 4 is 5 mm). The control means then operates the head side gas supply means 9 to form a flow of ambient gas between the semiconductor chip 1 and the semiconductor wafer 2 held by the holding portion 24 from the left to the right in the figure. On the other hand, at the bonding stage 4, the stage-side gas supply means 8 creates a flow of atmospheric gas between the bonding stage 4 and the cover member 7 from the left to the right in the figure. As a result, the air between the semiconductor chip 1 held by the bonding head 5 and the semiconductor wafer 2 supported by the bonding stage 4 is replaced with atmospheric gas flowing from the left to the right in the figure.

[0030] In this embodiment, the flow rate of the atmospheric gas formed by the head side gas supply means 9 is set to be higher than the flow rate of the atmospheric gas formed by the stage side gas supply means 8 . Specifically, for example, when the gas supply source 12 in the head side gas supply means 9 supplies the ambient gas at a flow rate of 20 L / min, the flow velocity of the ambient gas flowing from left to right in the figure immediately after being ejected from the wide slit SL is 1.0 m / s, thereafter the flow velocity in the vicinity of the bonding position of the semiconductor chip 1 is 0.4 to 0.5 m / s, and the flow velocity downstream beyond the bonding position is 0.2 m / s. In contrast, in the stage-side gas supply means 8, when the gas supply source 12 supplied the atmospheric gas to the nozzle 13 at a flow rate of 150 L / min, the flow velocity at the supply part 13b of the nozzle 13 was 5.0 to 20.0 m / s. Furthermore, by providing the mesh member 16 at the nozzle 13a, the atmospheric gas is sprayed uniformly from the entire nozzle 13a, and then, when a flow from left to right in the figure is formed by the flow straightening guide 14, the flow velocity near the nozzle 13a is 1.0 m / s, the flow velocity near the bonding position of the semiconductor chip 1 is 0.05 m / s, and the flow velocity near the opposing guide 15 beyond the substrate support portion 4a is 0.02 to 0.04 m / s.

[0031] In this way, in the bonding apparatus 3 of this embodiment, the stage side gas supply means 8 and the head side gas supply means 9 each supply atmospheric gas, so that the air surrounding the bonding position between the semiconductor chip 1 and the semiconductor wafer 2 can be replaced with atmospheric gas at a high level. First, the stage-side gas supply means 8 injects ambient gas from the injection port 13a formed on the upper surface of the bonding stage 4, and this ambient gas forms a unidirectional flow from left to right in the figure by the flow straightening guide 14. On the other hand, in the bonding head 5, the head-side gas supply means 9 circulates atmospheric gas around the semiconductor chip 1 adsorbed and held on the underside of the holding portion 5, and the atmospheric gas flows in the same direction as the atmospheric gas formed by the stage-side gas supply means 8, that is, from left to right in Figure 2. However, the direction of the atmospheric gas formed by the head side gas supply means 9 may be perpendicular to the atmospheric gas formed by the stage side gas supply means 8 or may be opposite, and the direction may be different. This is because, by setting the flow rate of the atmospheric gas formed by the head side gas supply means 9 higher than the flow rate of the atmospheric gas formed by the stage side gas supply means 8, the atmospheric gas formed by the head side gas supply means 9 in the vicinity of the joining position is at a more positive pressure than the atmospheric gas formed by the stage side gas supply means 8 in the surrounding area, and in this way, the entrainment of external atmosphere can be more effectively suppressed.

[0032] When the space between the semiconductor chip 1 and the semiconductor wafer 2 is replaced with atmospheric gas in this manner, the control means controls the laser light irradiation means 21 to irradiate the semiconductor chip 1 with laser light L to melt the bumps of the semiconductor chip 1, and then lowers the bonding head 5 to bring the semiconductor chip 1 into close contact with the semiconductor wafer 2. When the semiconductor chip 1 is brought into close contact with the semiconductor wafer 2 and the irradiation of the laser light L by the laser light irradiation means 21 is stopped, the molten bumps are cooled and solidified. However, if the bonding head 5 is made to wait until the bumps are completely solidified, the time required to process one semiconductor chip 1 will become long. In this embodiment, even if the bonding head 5 is removed from the semiconductor chip 1 before the bumps are completely solidified, the flow of atmospheric gas formed by the stage-side gas supply means 8 is maintained, thereby preventing the external atmosphere from being drawn into the bonding position and preventing oxidation of the bumps. On the other hand, if the flow of atmospheric gas formed by the stage-side gas supply means 8 is not formed, and the bonding head 5 is raised before the bumps are completely solidified, the flow of atmospheric gas by the head-side gas supply means 9 will cease, and there is a risk that the external atmosphere will flow into the bonding position.

[0033] In the above embodiment, a head-side gas supply means 9 is provided on the bonding head 5 to supply atmospheric gas to the vicinity of the bonding position between the semiconductor chip 1 and the semiconductor wafer 2, but it is also possible to omit the head-side gas supply means 9. Even in this case, the atmosphere between the cover member 7 and the bonding stage 4 is replaced with the atmosphere gas by the stage-side gas supply means 8, so that oxidation of the bumps can be prevented. In the above embodiment, the side guide portion 14b of the flow straightening guide 14 has a parallel section and a divergent section 14d, but the side guide portion 14b may be composed of only the parallel section, or may be composed of only the divergent section 14d. [Explanation of symbols]

[0034] 1 Semiconductor chip 2 Semiconductor wafer (substrate) 3 Bonding equipment 4 Bonding stage 5 Bonding head 6 Transportation means 7 Cover member 7a Opening 8 stage side gas supply means 9 head side gas supply means 13 Nozzle 13a Injection port 13b Supply section 13c Discharge section 13d Main body 14 Flow guide 15 opposing guide 16 mesh-like member (resistance member)

Claims

1. A bonding apparatus comprising: a bonding stage having a substrate support portion formed on an upper surface thereof for supporting a substrate; a bonding head for holding a semiconductor chip; a cover member disposed above the bonding stage and having an opening through which the bonding head can pass; and stage-side gas supply means for supplying atmospheric gas between the cover member and the substrate support portion, the stage-side gas supply means includes a gas supply source that supplies an atmospheric gas, a nozzle that circulates the atmospheric gas from the gas supply source, and a flow guide that is provided between the cover member and the bonding stage; an ejection port of the nozzle is provided at a position adjacent to one side of the substrate support portion, and the ejection port is formed to be wider than the substrate supported by the substrate support portion; The bonding device is characterized in that the straightening guide comprises a main guide portion that is arranged along the nozzle and stands on the opposite side of the substrate support portion, and side guide portions that are arranged from both ends of the main guide portion toward the substrate support portion, and further comprises a gap formed between the upper portion of the straightening guide and the cover member.

2. The bonding apparatus according to claim 1, wherein the side guide portion of the straightening guide has a parallel section extending parallel from a starting end connected to the main guide portion, and a divergent section formed so as to be spaced apart from each other toward an end end.

3. the bonding head includes a holder for holding the semiconductor chip, and a head-side gas supply means for supplying an atmospheric gas between the semiconductor chip held by the holder and a substrate held by a bonding stage; 2. The bonding apparatus according to claim 1, wherein the flow rate of the atmospheric gas formed by the head side gas supply means in the vicinity of the bonding position between the semiconductor chip and the substrate is set higher than the flow rate of the atmospheric gas formed by the stage side gas supply means.

4. 2. The bonding apparatus according to claim 1, wherein a resistance member is provided at the nozzle outlet, so that the inside of the nozzle is kept at a positive pressure relative to the external atmosphere.

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