Light-emitting device

Abstract

To provide a highly portable light-emitting device, and also to provide a highly browsable light-emitting device.SOLUTION: A light-emitting device includes a strip-like high flexibility region and a strip-like low flexibility region arranged alternately in a first direction. The high flexibility region includes a flexible light-emitting panel, and the low flexibility region includes the light-emitting panel and a support panel having a lower flexibility than that of the light-emitting panel and overlapping with the light-emitting panel. It is preferable that the light-emitting panel includes an external connection electrode and that a length in the first direction of a low flexibility region A that overlaps with the external connection electrode is longer than a length in the first direction of a low flexibility region B that is closest to the region A.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting device, a display device, an electronic device, a lighting device, or a manufacturing method thereof. In particular, electroluminescence (EL A light-emitting device, a display device, an electronic device, a lighting device, or the manufacture thereof utilizing the phenomenon It concerns the method. [Background technology]

[0002] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0003] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. It is also required that the material be resistant to damage.

[0004] Light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) are easy to make thin and lightweight. It has features such as being able to respond quickly to signals and being able to be driven by a low-voltage DC power supply. Applications of these materials to light-emitting devices and display devices are currently being considered.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix type light emitting device having an EL element is disclosed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0007] For example, when a display device is made smaller to increase portability, the display area becomes smaller. This reduces the amount of information that can be displayed, making it harder to view.

[0008] One embodiment of the present invention is a light-emitting device, a display device, an electronic device, or a lighting device that is highly portable. Another object of the present invention is to provide a light-emitting device having excellent visibility, It is an object of the present invention to provide a display device or an electronic device. One object of the present invention is to provide a light-emitting device, a display device, or an electronic device that is excellent in terms of usability and visibility. Let us assume that.

[0009] One embodiment of the present invention provides a novel light-emitting device, a display device, an electronic device, or a lighting device. Another object of the present invention is to provide a light-weight light-emitting device, a light-emitting display device, an electronic device, Another object of the present invention is to provide a signal processing device or a lighting device. One of the objects of the present invention is to provide a highly reliable light-emitting device, display device, electronic device, or lighting device. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or the like that is not easily damaged. Another object of the present invention is to provide a lighting device having a thin thickness. It is an object of the present invention to provide a light-emitting device, a display device, an electronic device, or a lighting device. Another embodiment of the present invention is a flexible light-emitting device, a display device, an electronic device, or a lighting device. Another object of the present invention is to provide a seamless wide generating device. Light-emitting device or lighting device having a light area, or a display having a large seamless display area Another object of the present invention is to provide a device or electronic device. The object of the present invention is to provide a light-emitting device, a display device, an electronic device, or a lighting device with low power consumption. It shall be one.

[0010] Note that one embodiment of the present invention does not necessarily solve all of these problems. [Means for solving the problem]

[0011] The light-emitting device according to one embodiment of the present invention has a structure in which a strip-shaped region having high flexibility and a strip-shaped region having low flexibility are crossed. The light emitting device can be folded by bending it at the highly flexible region. The light-emitting device according to one embodiment of the present invention is highly portable when folded and is portable when unfolded. The seamless, wide light-emitting region provides excellent visibility. The portability of the device can be increased without reducing the size of the light-emitting or display area.

[0012] Specifically, one embodiment of the present invention is a flexible light-emitting panel and a support for the light-emitting panel, a plurality of support panels spaced apart from one another, the support panels being substantially smaller than the light-emitting panels; The light emitting device has low flexibility.

[0013] In one embodiment of the present invention, a band-shaped region having high flexibility and a band-shaped region having low flexibility are provided in a first direction. The light-emitting device has a flexible light-emitting panel and a flexible region. The less flexible region includes a support panel having a lower flexibility than the light-emitting panel, and a light-emitting panel. and a light emitting device having the above elements stacked on top of each other.

[0014] In the light-emitting device having the above-mentioned structure, a protective layer having a higher flexibility than the support panel is provided. The high and low flexibility areas preferably have overlapping light emitting panels and protective layers. It is.

[0015] In one embodiment of the present invention, a band-shaped region having high flexibility and a band-shaped region having low flexibility are provided in a first direction. The light-emitting device has a flexible light-emitting panel and a flexible region. The region having low flexibility includes a support panel having low flexibility compared to the light-emitting panel, and a support panel and a light-emitting panel between the light-emitting elements.

[0016] In the light-emitting device having the above structure, a pair of protective layers are provided, and the protective layers are more flexible than the support panel. In the region having high elasticity and low flexibility, a pair of protective layers are disposed between the support panels, and the light-emitting panel is preferably located between a pair of protective layers.

[0017] In one embodiment of the present invention, a band-shaped region having high flexibility and a band-shaped region having low flexibility are provided in a first direction. The light-emitting device has a flexible light-emitting panel and a flexible region. The less flexible region includes a pair of support panels and a light-emitting panel between the pair of support panels. The support panel is a light-emitting device having a lower flexibility than the light-emitting panel.

[0018] In the light-emitting device having the above structure, a pair of protective layers are provided, and the protective layers are more flexible than the support panel. In the region having high elasticity and low flexibility, a pair of protective layers are disposed between a pair of supporting panels, and a light emitting Preferably, the panel is positioned between a pair of protective layers.

[0019] In the light emitting device having the above-mentioned configuration, one of the two continuous highly flexible regions is bent inward. When one side is bent outward, the radius of curvature of the light-emitting panel in one highly flexible region is The radius of the light-emitting panel in the highly flexible region of the other circle is defined as the radius of curvature of the light-emitting panel. The circles are preferably overlapped by moving parallel to the plane supporting the light emitting device.

[0020] In this specification, the term "inward bending" refers to bending the light-emitting surface of the light-emitting panel inward. In addition, when the light-emitting panel is bent so that the light-emitting surface faces outward, this is called "outward bending." The light-emitting surface of a panel or a light-emitting device refers to the surface through which light from a light-emitting element is extracted.

[0021] In the light emitting device having the above-mentioned configuration, the light emitting device is configured such that the light emitting device is bent inward and outward alternately in a plurality of highly flexible regions. When this is repeated, the surface closest to the plane supporting the light-emitting device of the light-emitting panel and the surface farthest from the plane supporting the light-emitting device The shortest distance L between the light-emitting panel and the flexible region is the sum of the radii of curvature D of the light-emitting panel in the multiple highly flexible regions. , and the thickness T of the light-emitting panel, it is preferable that L be expressed as L<2(D+T).

[0022] In the light emitting device having the above-mentioned configuration, the light emitting panel includes an external connection electrode. The length in the first direction of the less flexible region A that overlaps with the pole is It is preferable that the length of the first direction is longer than that of the region B.

[0023] In each of the light emitting devices, the region A, the region B, and the region with the lowest flexibility furthest from the region A are Among the regions C, the region with the longest length in the first direction is region A, and the next longest is region C. It is preferable that there is.

[0024] In each of the light emitting devices, the length in the first direction of the plurality of less flexible regions is the longest. The region is preferably Region A.

[0025] Further, an electronic device or a lighting device using the light-emitting device having any of the above structures is also one embodiment of the present invention. In some cases, the light emitting device having the above-described configuration itself functions as an electronic device or a lighting device.

[0026] In this specification, the term "light-emitting device" includes a display device using a light-emitting element. The element is connected to a connector, such as anisotropic conductive film or TCP (Tape Carrier The module has a printed wiring board at the end of the TCP. The COG (Chip On Glass) method is used for the module or light emitting element. Modules on which ICs (integrated circuits) are directly mounted are also included in the category of light-emitting devices. This also includes light-emitting devices used in lighting fixtures, etc. Effect of the Invention

[0027] In one embodiment of the present invention, a light-emitting device, a display device, an electronic device, or a lighting device that is highly portable is provided. In one embodiment of the present invention, a light-emitting device, a display device, or an electronic According to one embodiment of the present invention, a light-emitting device and a display device that are highly portable and easy to view can be provided. , or electronic devices.

[0028] In one embodiment of the present invention, a novel light-emitting device, a display device, an electronic device, or a lighting device is provided. In one embodiment of the present invention, a lightweight light-emitting device, a display device, an electronic device, Alternatively, a lighting device with high reliability can be provided. It is possible to provide an optical device, a display device, an electronic device, or a lighting device. In one aspect, the present invention provides a light-emitting device, a display device, an electronic device, or the like that is less susceptible to breakage. Alternatively, in one embodiment of the present invention, a light-emitting device having a small thickness can be provided. Alternatively, the present invention can provide a device, a display device, an electronic device, or a lighting device. In one embodiment, a flexible light-emitting device, display device, electronic device, or lighting device is provided. Alternatively, in one embodiment of the present invention, a light-emitting device having a seamless wide light-emitting region can be provided. A device or lighting device, or a display device or electronic device having a large seamless display area In one embodiment of the present invention, a light-emitting device, a display device, or an electric device with low power consumption can be provided. A child device or lighting device can be provided. [Brief description of the drawings]

[0029] [Figure 1] 1A and 1B are diagrams illustrating a light-emitting device. [Diagram 2] 1A and 1B are diagrams illustrating a light-emitting device. [Diagram 3] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 4] 1A and 1B are diagrams illustrating a light-emitting device. [Diagram 5] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 6] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 7] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 8] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 9] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 10] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 11] 1A to 1C are diagrams illustrating a method for manufacturing a light-emitting panel. [Figure 12] 1A to 1C are diagrams illustrating a method for manufacturing a light-emitting panel. [Figure 13] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 14] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 15] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 16] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 17] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 18] 1A and 1B are diagrams illustrating a light-emitting panel. [Figure 19] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 20] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 21] 1A and 1B are diagrams illustrating a light-emitting device. [Figure 22] 1A and 1B are diagrams illustrating a light-emitting device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0031] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0032] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0033] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described.

[0034] The light-emitting device according to one embodiment of the present invention has a structure in which a strip-shaped region having high flexibility and a strip-shaped region having low flexibility are crossed. The light emitting device can be folded by bending it at the highly flexible region. The light-emitting device according to one embodiment of the present invention is highly portable when folded and is portable when unfolded. The wide, seamless luminous area provides excellent visibility.

[0035] In the light-emitting device according to one embodiment of the present invention, the highly flexible region can be folded either inward or outward. It can also be folded.

[0036] When the light-emitting device according to one embodiment of the present invention is not in use, the light-emitting panel is bent so that the light-emitting surface faces inward. By doing so, it is possible to prevent scratches and dirt on the light-emitting surface.

[0037] When using the light-emitting device according to one embodiment of the present invention, it can be unfolded to provide a seamless, wide light-emitting area. The entire light emitting area can be used, or the light emitting surface of the light emitting panel can be bent outward to reduce the light emitting area. A light-emitting area that is folded and invisible to the user may be called a non-light-emitting area. This makes it possible to reduce the power consumption of the light emitting device.

[0038] In the following, a flexible sheet having two band-shaped regions of high flexibility and three band-shaped regions of low flexibility will be described. An example of a light emitting device that can be folded into three will be described below.

[0039] FIG. 1(A) shows the light-emitting device in an unfolded state. FIG. 1(B) shows the light-emitting device in an unfolded or folded state. Figure 1(C) shows the light-emitting device in the process of changing from one folded state to the other. FIG. 2 is a perspective view showing each component of the light emitting device. FIG. 3(A) shows the light emitting device in a blank state. FIG. 3(B) is a plan view of the light emitting surface side of the light emitting device, and FIG. 3(C) is a plan view of the surface side opposite to the light emitting surface of the light emitting device. 3(C), (D), and (F) are side views of the light emitting device of FIG. 3(A) in the direction of the arrow. FIG. 3(E) is an example of a side view of the portion between the dashed line AB in FIG. 3(A). 4(A), (C), and (D) are cross-sectional views of the light-emitting device of FIG. 1(C) from the direction of the arrow. 1 is an example of a side view of the device.

[0040] In addition, Figs. 14(A) to (C) show modified examples of Figs. 1(A) to (C), respectively. FIG. 14(A) shows the light-emitting device in an unfolded state. FIG. 14(B) shows the light-emitting device in an unfolded or folded state. FIG. 14(C) shows the light-emitting device in the folded state. 15 is a perspective view showing each component of the light emitting device. FIG. 16(B) is a plan view of the light emitting surface of the light emitting device, and FIG. 16(C) is a plan view of the surface opposite to the light emitting surface of the light emitting device. 16(C) and (D) are plan views of the light emitting device of FIG. 16(A) in the direction of the arrow. FIG. 16(E) is an example of a side view seen from the front. Fig. 16(F) is a cross-sectional view of a modification of the light emitting device shown in Fig. 16(C) and so on.

[0041] The light emitting devices shown in FIGS. 1(A) to (C) and 14(A) to (C) are made of a flexible light emitting panel. The light emitting device further includes a plurality of support panels 15a and a plurality of support panels 15. Each of the support panels 15a and 15b has a lower flexibility than the light-emitting panel 11. The plurality of support panels 15a are spaced apart from each other. The plurality of support panels 15b are spaced apart from each other. There are.

[0042] As shown in FIG. 3A, the light emitting device has a highly flexible region E1 and a less flexible region E2. The highly flexible and less flexible regions are formed in stripes. In this embodiment, a plurality of highly flexible regions and a plurality of less flexible regions are arranged parallel to each other. Although an example in which the regions are arranged in rows is shown, the regions do not have to be arranged in parallel.

[0043] The highly flexible region E1 of the light emitting device has at least a flexible light emitting panel. In particular, light-emitting panels using organic EL elements have high flexibility and impact resistance, This is preferable because it can be made thin and lightweight. More details are provided in Section 3.

[0044] The region E2 of low flexibility in the light emitting device is at least a flexible light emitting panel and It is sufficient that the light-emitting panel is overlapped with a support panel that is less flexible than the light-emitting panel.

[0045] As shown in FIG. 16(A), the light emitting device has a region with high flexibility in one direction and a region with low flexibility in another direction. The two regions are alternately spaced.

[0046] In FIG. 16(A), a region of high flexibility and a region of low flexibility are shown. The lengths in the direction in which they are lined up are indicated as length W1 to length W3.

[0047] Moreover, the region with low flexibility preferably includes an external connection electrode of the light-emitting panel. Here, the external connection electrode corresponds to, for example, the conductive layer 157 shown in FIG.

[0048] In FIG. 16A, an external connection electrode is included in the region with low flexibility having a length W1. The length W1 of the less flexible region A that overlaps with the external connection electrode is It is longer than the length W3 of region B.

[0049] Here, when the light emitting device is folded, the end portion (the folded portion, the folded portion) of the light emitting panel 11 The ends of the support panels 15a and 15b are located on the outside of the ends of the support panels 15a and 15b. If the light emitting panel 11 is placed in a position where the light emitting panel 11 is exposed to the outside, the light emitting panel 11 may be damaged or the elements included in the light emitting panel 11 may be destroyed. This may be the case.

[0050] On the other hand, in the light emitting device in the folded state shown in FIG. 1(C), the edge of the light emitting panel 11 and the light emitting The ends of the support panels 15a and 15b located above and below the panel 11 are aligned. Therefore, the light-emitting panel 11 can be prevented from being damaged, and the elements included in the light-emitting panel 11 can be prevented from being destroyed. Can be controlled.

[0051] Furthermore, in the light-emitting device in the folded state shown in FIG. 14(C), the end of the light-emitting panel 11 is The light-emitting panel 15a is located on the inner side of the ends of the support panels 15a and 15b. This can prevent the light-emitting panel 11 from being damaged, and the elements included in the light-emitting panel 11 from being destroyed.

[0052] From the above, in the light emitting device, the length W1 of the region A with low flexibility that overlaps with the external connection electrode is It is preferable that the length W3 of the region B having low flexibility closest to the region A is longer than that of the region B. The length W1 of region A, the length W3 of region B, and the length W of region C, which is the least flexible region furthest from region A Of the two, it is preferable that the length W1 is the longest, and the length W2 is the next longest.

[0053] The support panel is provided on at least one of the light emitting surface side of the light emitting panel and the surface side facing the light emitting surface. It would be good if it was done.

[0054] As shown in FIG. 3(C) or FIG. 16(C), the light emitting panel is When a support panel is provided on both the light surface side and the surface side facing the light emitting surface, the pair of support panels Since the light-emitting panel can be sandwiched between the two plates, the mechanical strength of the less flexible area can be increased, and the light-emitting device can be more easily supported. This is preferable because it is less likely to break.

[0055] In addition, instead of the support panels 15a and 15b, the support panel shown in FIG. 3(D) or FIG. 16(D) may be used. The light emitting panel 11 may be disposed between the support panels 15 using a support rail 15 .

[0056] In addition, in the region E2 having low flexibility in FIG. 1(A), FIG. 2, FIG. 3(C), etc., the protective layer Although an example in which the side surface of the light-emitting panel is exposed has been shown, one embodiment of the present invention is not limited to this. As shown in Fig. 1F, in the region E2 with low flexibility, the side of the protective layer and the light-emitting panel are not supported by the support panel. Even if the panel 15 (or one or both of the pair of support panels 15a, 15b) is covered FIG. 21 shows a light emitting device in which the protective layer and the side of the light emitting panel are covered with a support panel 15b. FIG. 21(A) shows the light-emitting device in an unfolded state. B) The light emission during a change from one of the unfolded state and the folded state to the other. FIG. 21(C) shows the light-emitting device in a folded state. FIG. 22 FIG. 2 is a perspective view showing each component of the light emitting device.

[0057] When a support panel is provided only on the light-emitting surface side or the surface side facing the light-emitting surface of the light-emitting panel, the light-emitting device For example, as shown in FIG. As a light emitting device having only a plurality of support panels 15b without using a plurality of support panels 15a, This is also fine.

[0058] The highly flexible region E1 and the less flexible region E2 are different from the light-emitting panel and the support panel. It is preferable that the light emitting device has a highly flexible protective layer. The region E1 with high elasticity is flexible and has high mechanical strength, so that the light emitting device is more durable. Therefore, it is possible to prevent damage to the flexible material not only in the region with low flexibility but also in the region with high flexibility. In this region, the light emitting device can be configured so as to be less likely to be damaged by deformation due to external forces or the like.

[0059] For example, the thicknesses of the light-emitting panel, the support panel, and the protective layer are the thickest, It is preferable that the light-emitting panel is the thinnest. Alternatively, for example, the light-emitting panel, the support panel, the protection panel, The flexibility of each of the layers is such that the support panel is the least flexible and the light-emitting panel is the most flexible. With such a configuration, it is possible to separate a region having high flexibility and a region having low flexibility. The difference in flexibility between the two regions becomes large. It is necessary to ensure that the bending can be performed in the region with high flexibility. Therefore, bending in the region with low flexibility can be suppressed, and the reliability of the light emitting device can be improved. In addition, it is possible to prevent the light emitting device from bending unintentionally.

[0060] When a protective layer is provided on both the light-emitting surface side and the surface side facing the light-emitting surface of the light-emitting panel, a pair of protective layers is formed. The light-emitting panel is sandwiched between layers, which increases the mechanical strength of the light-emitting device and makes it easier to This is preferable because it is less likely to break.

[0061] For example, as shown in FIG. 3C or FIG. 16C, in the region E2 having low flexibility, a pair of The protective layers 13a and 13b are disposed between a pair of support panels 15a and 15b, and the light-emitting panel (FIG. It is preferable that a protective layer (not shown) is located between the pair of protective layers 13a, 13b.

[0062] Alternatively, as shown in FIG. 3(D) or FIG. 16(D), in the region E2 having low flexibility, a pair of The protective layers 13a and 13b are disposed between the support panels 15, and a pair of light-emitting panels (not shown) are disposed between the support panels 15. It is preferable that the protective layer 13a is located between the protective layers 13a and 13b.

[0063] If a protective layer is provided only on the light-emitting surface side or the surface side opposite to the light-emitting surface of the light-emitting panel, the light-emitting device can be more effectively protected. For example, the protective layer 13a is not used, and the protective layer A light emitting device having only 13b may also be used.

[0064] In addition, if the protective layer 13a on the light-emitting surface side of the light-emitting panel is a light-shielding film, the non-light-emitting area of ​​the light-emitting panel This prevents external light from reaching the non-light emitting area. This is preferable because it can suppress light deterioration of transistors and the like that are used.

[0065] As shown in FIG. 2, FIG. 3(E), FIG. 15 or FIG. 16(E), The opening of the protective layer 13a overlaps with the light-emitting area 11a of the light-emitting panel. The non-light emitting region 11b surrounding the light emitting element a in a frame shape is provided so as to overlap with the protective layer 13a. The protective layer 13b provided on the surface of the panel 11 facing the light-emitting surface is a layer that covers the light-emitting area 11a and the non-light-emitting area 11b. The protective layer 13b overlaps the light emitting region 11b. It is particularly preferable that the light-emitting panel is provided over the entire surface, so that the light-emitting panel can be protected more effectively. This can improve the reliability of the light emitting device.

[0066] In the light-emitting device according to one embodiment of the present invention, inward bending and outward bending are alternately performed in a plurality of highly flexible regions. When this is repeated, the surface closest to the plane supporting the light-emitting device of the light-emitting panel and the surface farthest from the plane supporting the light-emitting device The shortest distance L between the light-emitting panel and the flexible region is the sum of the radii of curvature D of the light-emitting panel in the multiple highly flexible regions. It is preferable that the distance L is expressed as L<2(D+T) using the thickness T of the light-emitting panel. This makes it possible to realize a thinner light emitting device.

[0067] The light emitting device shown in FIG. 4A is formed by bending one highly flexible region inward and forming one highly flexible At the boundary between the protective layer 13a and the protective layer 13b in FIG. The light-emitting panel is assumed to be located. The diameters D1 and D2 in FIG. 4(A) are explained in detail. The diameter D1 is the diameter of the light-emitting panel in the highly flexible area bent inward. The diameter D2 is the diameter of the circle whose radius is the radius of curvature of the bend. The diameter of a circle having a radius equal to the radius of curvature of the light-emitting panel at the thickness of the light-emitting panel 11 is shown. The sum of the diameters D1 and D2 is shown as T. Since L<2(D+T) is twice the sum of the radii of curvature of D, <D1+D2+2Tと In other words, the plane supporting the light emitting device of the light emitting panel in FIG. The shortest distance L1 between the closest and furthest faces is D1+D2+3T.

[0068] The thickness of the support panels 15a, 15b and the thickness of the protective layers 13a, 13b are reduced, or the panels are bent inward. Narrowing the width of the less flexible region between the more flexible region and the more flexible region that bends outward 4C, the surface closest to the plane supporting the light emitting device of the light emitting panel shown in FIG. The shortest distance between the farthest faces is L2, so L2 <D1+D2+3T、さらにはL2<D 1+D2+2T, in other words, L2<2(D+T).

[0069] Here, in the light emitting device, the outer side of the region having low flexibility that is overlapped by bending is The pair of regions is preferably parallel to the plane supporting the light emitting device, and the pair of regions is preferably located on the inside. It is preferred that other areas in which the substrate is placed are not parallel to the plane.

[0070] In the light-emitting device according to one embodiment of the present invention, one of two continuous highly flexible regions is bent inward. When one panel is bent outward, the radius of curvature of the light-emitting panel in one highly flexible region is reduced by half. a circle having a radius equal to the radius of curvature of the light-emitting panel in the other highly flexible region; It is preferable that the overlapping occurs by moving the light emitting device parallel to the plane supporting the light emitting device. This makes it possible to realize a thinner light emitting device.

[0071] As shown in FIG. 4(D), a circle with a diameter D1 and a circle with a diameter D2 are disposed on a plane supporting the light emitting device. By moving parallel to the arrows (corresponding to moving to the left and right of the page), they overlap. The radius of curvature of the light-emitting panel in the highly flexible region and the radius of curvature of the light-emitting panel in the highly flexible region bent outward Since the radius of curvature of the light-emitting panel in corresponds to the radius of the two circles, It can be said that the light emitting device has become thinner.

[0072] In addition, the surface closest to the plane supporting the light emitting device of the light emitting panel shown in FIG. The shortest distance L3 between the surface is L3 <D1+D2+3T、さらにはL3<D1+D2+2 T, in other words, L3<2(D+T). The protective layer 13 a and the protective layer 13 b are collectively referred to as the protective layer 13 .

[0073] The protective layer or support panel can be made of plastic, metal, alloy, rubber, etc. By using plastic or rubber, a protective layer or support panel that is lightweight and resistant to damage can be obtained. For example, a silicone rubber protective layer and a stainless steel support panel are used. Or aluminum may be used.

[0074] It is also preferable to use a highly tough material for the protective layer and the support panel. It is possible to realize a light-emitting device that is resistant to impact and is not easily damaged. For example, By using metal and alloy materials, it is possible to realize a light-emitting device that is lightweight and not easily damaged. For the same reason, it is preferable to use a highly tough material for the substrate constituting the light-emitting panel. I wish.

[0075] The protective layer and support panel located on the light-emitting surface side are not overlapped with the light-emitting area of ​​the light-emitting panel. The protective layer or the support panel located on the light-emitting surface side is transparent to at least a part of the light. If it overlaps with the light emitting panel, it is preferable to use a material that transmits light emitted from the light emitting panel. The light transmittance of the protective layer and the support panel located on the surface opposite to the light surface does not matter.

[0076] When bonding two of the protective layer, support panel, or light-emitting panel together, various adhesives are used. For example, resins that cure at room temperature, such as two-liquid mixed resins, photocurable resins, Resins such as thermosetting resins can be used. Also, a sheet-like adhesive can be used. In addition, screws or clamps that penetrate two or more of the protective layer, support panel, and light-emitting panel are prohibited. The components of the light emitting device may be fixed using pins, clips, etc.

[0077] The light-emitting device according to one embodiment of the present invention has one light-emitting panel (one light-emitting region) folded. It can be used by dividing it into two or more parts. For example, it can be folded to make the hidden area non-luminous. Only the exposed area may emit light. This reduces the consumption of the area not used by the user. This can reduce the amount of electricity consumed.

[0078] In the light-emitting device according to one embodiment of the present invention, it is possible to determine whether each highly flexible region is folded. For example, a switch, a MEMS pressure sensor or a pressure sensor It can be constructed using a sensor or the like.

[0079] Although the light emitting device having two highly flexible regions has been described above as an example, the present invention is not limited to this. For example, as shown in FIG. 5(A), a flexible substrate having at least one region E1 with high flexibility is It is sufficient that the flexible member has three highly flexible regions E1 as shown in FIG. 5(B) or FIG. 17(A). A light-emitting device that can be folded into four, or a highly flexible region E1 shown in FIG. 5(C) or FIG. 17(B) Each of the light-emitting devices having four openings and capable of being folded into five is also an embodiment of the present invention.

[0080] For example, in the light emitting device shown in FIG. 17A, among the lengths W1 to W4, the length W1 is the shortest. The length W3 is the longest, the length W2 is the next longest, and the length W3 and the length W4 are the shortest. The length W3 and the length W4 are different. The value may be:

[0081] In the light emitting device shown in FIG. 17(B), the length W1 is the longest among the lengths W1 to W5. The length W2 is the next longest, and the lengths W3, W4, and W5 are the shortest. The width W4 and the length W5 may be different values.

[0082] 6(A) and (B) show an example of the light emitting device shown in FIG. 5(C) folded in five. show.

[0083] In FIG. 6(A), the shortest distance L4 between the surface closest to and the surface farthest from the plane supporting the light-emitting device of the light-emitting panel is expressed as L4 = 2D + 5T using the sum D of the radii of curvature of the light-emitting panel within a plurality of highly flexible regions and the thickness T of the light-emitting panel. Note that 2D = D1 + D2 + D3 + D4.

[0084] By making the thicknesses of the support panels 15a and 15b and the thicknesses of the protective layers 13a and 13b thinner, inwardly bending narrowing the width of the low-flexibility region between the highly flexible region that is inwardly bent and the highly flexible region that is outwardly bent, etc., the shortest distance L5 between the surface closest to and the surface farthest from the plane supporting the light-emitting device of the light-emitting panel shown in FIG. 6(B) is such that L5 < D1 + D2 + D3 + D4 + 5T using the sum D of the radii of curvature of the light-emitting panel within a plurality of highly flexible regions and the thickness T of the light-emitting panel, and further L5 < D1 + D2 + D3 + D4 + 2T, in other words, L5 < 2D + 2T can be satisfied.

[0085] Also, the circle with diameter D1 and the circle with diameter D2 shown in FIG. 6(B) overlap when translated parallel to the plane supporting the light-emitting device (corresponding to moving in the left-right direction of the paper surface here). Also, the circle with diameter D3 and the circle with diameter D4 also overlap when translated parallel to the plane supporting the light-emitting device. Since the radius of the circle with diameter D1 and the radius of the circle with diameter D2 correspond to the radius of curvature of the light-emitting panel in the highly flexible region that is inwardly bent and the radius of curvature of the light-emitting panel in the highly flexible region that is outwardly bent when one of two consecutive highly flexible regions is inwardly bent and the other is outwardly bent, it can be said that the light-emitting device shown in FIG. 6(B) has also been thinned. ​​​​​​​The same can be said from the radius of the circle with diameter D3 and the radius of the circle with diameter D4.

[0086] As shown in FIG. 6B, a pair of less flexible regions located on the outermost sides of the light emitting device By narrowing the width of other less flexible regions compared to the above, the light emitting device can be made thinner. It is possible.

[0087] In addition, when folding the light emitting device, the highly flexible region does not necessarily alternate between inward and outward bending. For example, as shown in FIG. 5(D), each highly flexible region may be bent inward. By keeping the device in this state, the light-emitting surface of the device will not be scratched or damaged when it is carried around. The occurrence of stains can be suppressed.

[0088] In the light emitting device of this embodiment, one light emitting panel can be folded one or more times. In this case, the radius of curvature can be, for example, 1 mm or more and 150 mm or less.

[0089] This embodiment mode can be combined with other embodiment modes as appropriate.

[0090] (Embodiment 2) In this embodiment, the light-emitting panel will be described with reference to FIGS. When the light-emitting panel shown in the example is bent, the minimum radius of curvature of the light-emitting panel is 1 mm or more. 50mm or less, 1mm to 100mm, 1mm to 50mm, 1mm to 10m The light-emitting panel of the present embodiment may have a thickness of 2 mm or less, or a thickness of 5 mm or less. The element will not break even if it is bent with a small radius of curvature (for example, 2 mm to 5 mm). The light-emitting panel according to one embodiment of the present invention is bent with a small radius of curvature, and the light-emitting panel has high reliability. The optical device can be made thinner. The light-emitting panel of the present embodiment may be bent in any direction. The bending may be at one location or at two or more locations.

[0091] <Example 1> FIG. 7A shows a plan view of light-emitting panel 11 exemplified in the first embodiment. An example of a cross-sectional view taken along dashed dotted line A1-A2 is shown in FIG.

[0092] The light-emitting panel shown in FIG. 7B includes an element layer 101, an adhesive layer 105, and a substrate 103. The child layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a plurality of transistors, a conductive layer 157, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, sealing layer 213, It has an insulating layer 261 , a colored layer 259 , a light-shielding layer 257 , and an insulating layer 255 .

[0093] The conductive layer 157 is electrically connected to the FPC 108 via a connector 215 .

[0094] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is electrically connected to a source electrode or a drain electrode of the transistor 240 . The end of the lower electrode 231 is covered with an insulating layer 211. The upper electrode 235 has a light-transmitting property and transmits the light emitted by the EL layer 233. .

[0095] A colored layer 259 is provided at a position overlapping the light emitting element 230, and a colored layer 259 is provided at a position overlapping the insulating layer 211. A light-shielding layer 257 is provided. The colored layer 259 and the light-shielding layer 257 are covered with an insulating layer 261. The space between the light emitting element 230 and the insulating layer 261 is filled with a sealing layer 213.

[0096] The light-emitting panel includes a light extraction section 104 and a driving circuit section 106, and multiple transistors 240 and the like. The transistor 240 is provided over the insulating layer 205. The insulating layer 205 and the substrate 201 are bonded together by an adhesive layer 203. 55 and the substrate 103 are bonded together by an adhesive layer 105. If a film with low water permeability is used for 55, impurities such as water may enter the light emitting element 230 and the transistor 240. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light-emitting panel. The same material as that for the adhesive layer 105 can be used.

[0097] In the first specific example, the insulating layer 205, the transistor 240, and the light-emitting element are formed on a substrate having high heat resistance. The substrate 230 is then peeled off, and an insulating layer 20 is formed on the substrate 201 using an adhesive layer 203. 5, a transistor 240, and a light-emitting element 230 are transposed to produce a light-emitting panel. In addition, in the specific example 1, the insulating layer 255, the colored layer 259, and the The substrate is peeled off, and an insulating film is formed on the substrate 103 using the adhesive layer 105. The light-emitting panel can be produced by transposing the border layer 255, the colored layer 259, and the light-shielding layer 257. is doing.

[0098] When using a material with low heat resistance (such as resin) for the substrate, the substrate may be exposed to high temperatures during the manufacturing process. Since it is difficult to form a semiconductor substrate, there are limitations on the conditions for forming transistors and insulating films on the substrate. When using a material with high water permeability (such as resin) for the substrate of a light-emitting device, It is preferable to apply high temperature to form a membrane with low water permeability. Since transistors and other devices can be manufactured on a heat-resistant substrate, they can be used at high temperatures for reliability. This allows the formation of transistors with high electrical conductivity and insulating films with sufficiently low water permeability. By transferring these to a substrate with low heat resistance, a highly reliable light-emitting panel can be manufactured. As a result, in one embodiment of the present invention, a light-emitting device that is lightweight or thin and has high reliability can be realized. The details of the fabrication method will be described later.

[0099] It is preferable that the substrate 103 and the substrate 201 are made of a material having high toughness. This makes it possible to realize a light-emitting panel that is highly impact resistant and difficult to break. The substrate 201 is an organic resin substrate, and the substrate 202 is a substrate made of a thin metal material or alloy material. This allows for a light-emitting panel that is lighter and less prone to breakage than a glass substrate. It can be achieved.

[0100] Metallic and alloy materials have high thermal conductivity and can easily conduct heat across the entire substrate, making it ideal for the light-emitting panel. It is preferable to use a substrate made of a metal material or an alloy material because it is possible to suppress a local temperature rise in the substrate. The thickness of the plate is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. It is more preferable that

[0101] In addition, if a material with high thermal emissivity is used for the substrate 201, the surface temperature of the light-emitting panel will become high. Therefore, damage to the light-emitting panel and deterioration of its reliability can be suppressed. A metal substrate and a layer with high thermal emissivity (e.g., metal oxide or ceramic material) can be used. ) may be used as a laminate structure.

[0102] <Example 2> FIG. 8A shows another example of the light extraction section 104 in the light emitting panel. The panel is a light-emitting panel that can be touched. The description of the similar configuration will be omitted.

[0103] The light-emitting panel shown in FIG. 8A includes an element layer 101, an adhesive layer 105, and a substrate 103. The child layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a plurality of transistors, an insulating layer 207, an insulating layer 209, a plurality of light-emitting elements, an insulating layer 211, an insulating layer 217, a sealing layer 213, An insulating layer 261, a colored layer 259, a light-shielding layer 257, a plurality of light-receiving elements, a conductive layer 281, a conductive layer 2 83 , insulating layer 291 , insulating layer 293 , insulating layer 295 , and insulating layer 255 .

[0104] In the specific example 2, an insulating layer 217 is provided on the insulating layer 211. By providing the insulating layer 217, The distance between the substrate 103 and the substrate 201 can be adjusted.

[0105] FIG. 8A shows an example in which a light-receiving element is provided between the insulating layer 255 and the sealing layer 213. Non-light-emitting areas of the panel (for example, areas where transistors and wiring are provided, etc.) Since the light receiving element can be placed on the area (not covered by the LCD) A touch sensor can be provided on a light-emitting panel without reducing the aperture ratio.

[0106] The light receiving element of the light emitting panel is, for example, a pn-type or pin-type photodiode. In this embodiment, the light receiving element may be a p-type semiconductor layer 271, an i-type semiconductor layer A pin-type photodiode having an n-type semiconductor layer 273 and an n-type semiconductor layer 275 is used.

[0107] The i-type semiconductor layer 273 contains p-type impurities and n-type impurities. Each is 1×1020 cm -3 The concentration is less than 100, and the photoconductivity is 100% compared to the dark conductivity. The i-type semiconductor layer 273 contains an impurity element of Group 13 or 15 of the periodic table. In other words, i-type semiconductors are those that have an insulator for the purpose of valence electron control. When pure elements are not intentionally added, it shows weak n-type electrical conductivity. 73 is a method of intentionally or unintentionally adding impurity elements that impart p-type conductivity during or after film formation. This category includes those that have been added to the above.

[0108] The light-shielding layer 257 is located closer to the substrate 201 than the light-receiving element and overlaps the light-receiving element. The light emitted by the light emitting element 230 is blocked by the light blocking layer 257 located between the element and the sealing layer 213. It is possible to prevent the light receiving element from being irradiated with the light.

[0109] The conductive layer 281 and the conductive layer 283 are electrically connected to the light receiving element. It is preferable to use a conductive layer that transmits light incident on the light receiving element. It is preferable to use a conductive layer that blocks light incident on the light receiving element.

[0110] When the optical touch sensor is provided between the substrate 103 and the sealing layer 213, the light emitted by the light emitting element 230 This is preferable because it is less susceptible to the effects of noise and can improve the S / N ratio.

[0111] <Example 3> FIG. 8B shows another example of the light extraction section 104 in the light-emitting panel. The panel is a light-emitting panel that can be touched.

[0112] The light-emitting panel shown in FIG. 8B includes an element layer 101, an adhesive layer 105, and a substrate 103. The child layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a plurality of transistors, an insulating layer 207, insulating layer 209a, insulating layer 209b, a plurality of light-emitting elements, insulating layer 211, insulating layer 21 7, sealing layer 213, colored layer 259, light shielding layer 257, a plurality of light receiving elements, conductive layer 280, conductive layer 281 and an insulating layer 255 .

[0113] FIG. 8B shows an example in which a light-receiving element is provided between the insulating layer 205 and the sealing layer 213. The element is provided between the insulating layer 205 and the sealing layer 213 to form a transistor 240. The conductive layer and the semiconductor layer electrically connected to the light receiving element are made of the same material and in the same process as the conductive layer and the semiconductor layer. The photoelectric conversion layer that constitutes the light receiving element can be fabricated. Therefore, the fabrication process is greatly increased. It is possible to manufacture a light-emitting panel that can be touched without any need for a touch panel.

[0114] <Example 4> FIG. 9(A) shows another example of a light-emitting panel. The light-emitting panel in FIG. 9(A) is touch-operable. It is an illuminating panel.

[0115] The light-emitting panel shown in FIG. 9A includes an element layer 101, an adhesive layer 105, and a substrate 103. The child layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a plurality of transistors, a conductive layer 156, conductive layer 157, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, Insulating layer 217, sealing layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, conductive layer 27 2, a conductive layer 274, an insulating layer 276, an insulating layer 278, a conductive layer 294, and a conductive layer 296. do.

[0116] In FIG. 9A, a capacitive touch sensor is provided between an insulating layer 255 and a sealing layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0117] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108 via the connector 215. The conductive layer 294 and the conductive layer 296 are electrically connected to the conductive layer 274 via the conductive particles 292. Therefore, it is possible to drive a capacitive touch sensor via FPC108. This can be done.

[0118] <Example 5> FIG. 9B shows another example of a light-emitting panel. The light-emitting panel in FIG. 9B is touch-operable. It is an illuminating panel.

[0119] The light-emitting panel shown in FIG. 9B includes an element layer 101, an adhesive layer 105, and a substrate 103. The child layer 101 includes a substrate 201, an adhesive layer 203, an insulating layer 205, a plurality of transistors, a conductive layer 156, conductive layer 157, insulating layer 207, insulating layer 209, a plurality of light-emitting elements, insulating layer 211, Insulating layer 217, sealing layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, conductive layer 27 0, a conductive layer 272, a conductive layer 274, an insulating layer 276, and an insulating layer 278.

[0120] In FIG. 9B, a capacitive touch sensor is provided between the insulating layer 255 and the sealing layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0121] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108a via the connector 215a. The conductive layer 270 is electrically connected to the FPC 108b via the connection body 215b. Therefore, the light emitting element 230 and the transistor 240 are driven via the FPC 108a, and the F A capacitive touch sensor can be driven via PC 108b.

[0122] <Example 6> FIG. 10A shows another example of the light extraction section 104 in the light-emitting panel.

[0123] The light-emitting panel shown in FIG. 10A includes an element layer 101 , a substrate 103 , and an adhesive layer 105 . The element layer 101 includes a substrate 202, an insulating layer 205, a plurality of transistors, an insulating layer 207, and a conductive layer. layer 208, insulating layer 209a, insulating layer 209b, a plurality of light-emitting elements, insulating layer 211, sealing layer 2 13, and a color layer 259.

[0124] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is connected to a source electrode or a drain electrode of the transistor 240 via the conductive layer 208. The lower electrode 231 is electrically connected to the insulating layer 211. The lower electrode 231 has a light-transmitting property, and the EL layer 233 It transmits the light emitted by

[0125] A colored layer 259 is provided at a position overlapping the light emitting element 230, and the light emitted by the light emitting element 230 is The light emitting element 230 is connected to the substrate 202 via the colored layer 259. The substrate 202 is made of the same material as the substrate 201. It can be made by

[0126] <Example 7> FIG. 10B shows another example of a light-emitting panel.

[0127] The light-emitting panel shown in FIG. 10B includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The element layer 101 includes a substrate 202, an insulating layer 205, a conductive layer 310a, a conductive layer 310b, and a plurality of The light-emitting element includes an insulating layer 211 , a conductive layer 212 , and a sealing layer 213 .

[0128] The conductive layer 310a and the conductive layer 310b are external connection electrodes of the light-emitting panel, and are electrically connected to an FPC or the like. It can be electrically connected.

[0129] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The end of the electrode 231 is covered with an insulating layer 211. The light emitting element 230 is a bottom emitter. The lower electrode 231 has a light-transmitting property and transmits the light emitted by the EL layer 233. The conductive layer 212 is electrically connected to the lower electrode 231 .

[0130] The substrate 103 has a hemispherical lens, a microlens array, and a concave-convex structure as a light extraction structure. For example, the above-mentioned laser-coated film may be provided on a resin substrate. The lens or film is attached to the substrate by an adhesive having a refractive index similar to that of the lens or film. By bonding the substrate 103 with a light extraction structure, a substrate 103 having a light extraction structure can be formed. do.

[0131] The conductive layer 212 is not necessarily required, but the voltage drop caused by the resistance of the lower electrode 231 may be reduced. For the same purpose, the upper electrode 235 and the electric A conductive layer for electrically connecting the insulating layer 211, the EL layer 233, the upper electrode 235, or the like is provided on the insulating layer 211, the EL layer 233, the upper electrode 235, or the like. It is okay.

[0132] The conductive layer 212 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of , scandium, nickel, and aluminum, or alloys containing these as their main components. The conductive layer 212 can be formed as a single layer or a multilayer using a gold material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0. It is less than 5 μm.

[0133] A paste (such as silver paste) is used as the material for the conductive layer electrically connected to the upper electrode 235. When the conductive layer is heated, the metal constituting the conductive layer becomes granular and aggregates. As a result, the surface of the conductive layer becomes rough. For example, even if the conductive layer is formed on the insulating layer 211, the EL layer 233 However, it is difficult to completely cover the conductive layer, and it is difficult to electrically connect the upper electrode and the conductive layer. This is preferable because it makes it easier to

[0134] <Examples of materials> Next, materials that can be used for the light-emitting panel will be described. The description of the configuration described above will be omitted.

[0135] The element layer 101 includes at least a light-emitting element. The light-emitting element is an element capable of self-emitting light. The category includes elements whose luminance is controlled by current or voltage. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be used. can.

[0136] The element layer 101 further includes transistors for driving the light-emitting elements, touch sensors, etc. It is okay to do so.

[0137] The structure of the transistors in the light-emitting panel is not particularly limited. For example, The transistor may be a top gate type or an inverted staggered type. The transistor may have either a bottom gate type or a bottom gate type structure. The conductive material is not particularly limited, and examples thereof include silicon and germanium. At least one of indium, gallium, and zinc, such as In-Ga-Zn-based metal oxides An oxide semiconductor including these may be used.

[0138] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region If a semiconductor having crystallinity is used, the transistor This is preferable because it can suppress deterioration of the star characteristics.

[0139] The light-emitting element of the light-emitting panel includes a pair of electrodes (a lower electrode 231 and an upper electrode 235) and The EL layer 233 is provided between the pair of electrodes. One of the pair of electrodes serves as an anode. one functions as a cathode and the other functions as a cathode.

[0140] The light-emitting element is available in top emission structure, bottom emission structure, and dual emission structure. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. I wish.

[0141] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped It can be formed using zinc oxide, etc. Also, gold, silver, platinum, magnesium, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride or the like can be used by forming it thin enough to have light transmitting properties. A laminated film of the above materials can also be used as the conductive film. For example, silver and magnesium It is preferable to use a laminated film of an alloy of this material and ITO, since the electrical conductivity can be increased. Graphene and the like may also be used.

[0142] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0143] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0144] A voltage higher than the threshold voltage of the light emitting element is applied between the lower electrode 231 and the upper electrode 235. When the light is injected from the anode side to the EL layer 233, holes are injected from the cathode side and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer 233, and the light-emitting material contained in the EL layer 233 emits light. do.

[0145] The EL layer 233 has at least a light-emitting layer. The EL layer 233 has a positive electrode as a layer other than the light-emitting layer. Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a polymer (such as a polymeric material).

[0146] The EL layer 233 may be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 233 may each be formed by deposition (vacuum deposition). The method may include a transfer method, a printing method, an ink-jet method, a coating method, etc. do.

[0147] In the element layer 101, the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting device, This can prevent a decrease in the reliability of the device.

[0148] Insulating films with low water permeability include those containing nitrogen and silicon, such as silicon nitride film and silicon oxynitride film. Examples of the film include a film containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0149] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / m 2 ·day] or less , preferably 1 x 10 -6 [g / m 2 ·day] or less, preferably 1×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less .

[0150] The substrate 103 has a light-transmitting property and transmits at least the light emitted by the light-emitting element included in the element layer 101. The substrate 103 may be flexible. The refractive index of the substrate 103 is set to be equal to that of the air. higher than the rate of return.

[0151] Since organic resin is lighter than glass, the use of organic resin for the substrate 103 makes it possible to This is preferable because it allows the light-emitting device to be made lighter than when a glass is used.

[0152] Examples of materials having flexibility and transparency to visible light include flexible materials. Thick glass, polyethylene terephthalate (PET), polyethylene naphthalate ( PEN) and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES ) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide Resin, polyvinyl chloride resin, etc. In particular, it is preferable to use materials with a low thermal expansion coefficient. For example, polyamide-imide resin, polyimide resin, PET, etc. are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an inorganic filler is impregnated with organic resin. It is also possible to use a substrate with a mixed material to reduce the thermal expansion coefficient.

[0153] The substrate 103 is made of a layer of the above-mentioned material, which acts as a hard layer to protect the surface of the light-emitting device from scratches. A hard coat layer (e.g., a silicon nitride layer) or a layer of a material that can disperse pressure (e.g., an aluminum alloy layer) The light emitting element may be laminated with a layer of a tertiary amide resin or the like. In order to suppress a decrease in the life of the electrode, the electrode may have the insulating film having low water permeability.

[0154] The adhesive layer 105 has a light-transmitting property and transmits at least the light emitted by the light-emitting element of the element layer 101. In addition, the refractive index of the adhesive layer 105 is higher than the refractive index of the air.

[0155] The adhesive layer 105 may be made of a resin that cures at room temperature, such as a two-part mixed resin, a photocurable resin, or a thermosetting resin. Resins such as chemically resistant resins can be used. For example, epoxy resins, acrylic resins, silicone resins, etc. Examples of resins that are suitable for use include silicone resins and phenolic resins. In particular, materials with low moisture permeability such as epoxy resins are suitable. Fee is preferred.

[0156] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (oxide Use substances that adsorb moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the light emitting element. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light emitting device.

[0157] In addition, by mixing the above resin with a filler having a high refractive index (such as titanium oxide), the luminescent element This is preferable because it can improve the light extraction efficiency from the element.

[0158] The adhesive layer 105 may also include a scattering member that scatters light. For 105, a mixture of the above resin and particles having a refractive index different from that of the above resin may also be used. The particles act as light scatterers.

[0159] The difference in refractive index between the resin and the particles having a refractive index different from that of the resin is preferably 0.1 or more. It is more preferable that the ratio is 0.3 or more. Specifically, the resin is an epoxy resin, an acrylic resin, or the like. Resins, imide resins, silicones, etc. can be used. Titanium oxide particles can also be used. , barium oxide, zeolite, etc. can be used.

[0160] Titanium oxide and barium oxide particles are preferred because they have a strong light scattering property. By using light, it is possible to absorb water contained in resin, etc., improving the reliability of the light-emitting element. It is possible to do so.

[0161] The insulating layer 205 and the insulating layer 255 can be made of an inorganic insulating material. It is preferable to use an insulating film with low water resistance because this allows a highly reliable light-emitting panel to be realized.

[0162] The insulating layer 207 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a nitride film, or a silicon nitride film. An inorganic insulating film such as a silicon oxide film or an aluminum oxide film can be used.

[0163] The insulating layer 209, the insulating layer 209a, and the insulating layer 209b are each a transistor It is preferable to select an insulating film having a planarizing function in order to reduce surface irregularities caused by the above-mentioned factors. For example, organic materials such as polyimide, acrylic, and benzocyclobutene resins can be used. In addition to the above organic materials, low-dielectric constant materials (low-k materials) can also be used. In addition, a laminated structure using insulating films and inorganic insulating films formed from these materials can be obtained. Good too.

[0164] The insulating layer 211 is provided to cover the end of the lower electrode 231. In order to improve the coverage of the EL layer 233 and the upper electrode 235 to be formed, the insulating layer 21 It is preferable that the first side wall is an inclined surface formed with a continuous curvature.

[0165] The material of the insulating layer 211 may be a resin or an inorganic insulating material. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin, etc. In particular, the insulating layer 211 can be easily formed. Therefore, it is preferable to use a negative photosensitive resin or a positive photosensitive resin. .

[0166] The method for forming the insulating layer 211 is not particularly limited, but may be a photolithography method, a sputtering method, Vapor deposition method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing etc.) can be used.

[0167] The insulating layer 217 can be formed using an inorganic insulating material, an organic insulating material, or the like. For example, negative or positive photosensitive resins, non-photosensitive resins, etc. may be used as organic insulating materials. Alternatively, a conductive layer may be formed instead of the insulating layer 217. For example, a metal material The metal material may be titanium, aluminum, or the like. A conductive layer can be used instead of the insulating layer 217, and the conductive layer and the upper electrode 235 can be electrically connected. By adopting a configuration in which the upper electrode 235 is electrically connected, it is possible to suppress a potential drop caused by the resistance of the upper electrode 235. Furthermore, the insulating layer 217 may have a forward tapered shape or an inverse tapered shape.

[0168] The insulating layer 276, the insulating layer 278, the insulating layer 291, the insulating layer 293, and the insulating layer 295 are In particular, the insulating layer 278 and the insulating layer 295 can be formed using an inorganic insulating material or an organic insulating material. In order to reduce surface irregularities caused by the sensor element, an insulating layer having a planarizing function is used. is preferred.

[0169] The sealing layer 213 may be formed of a resin that hardens at room temperature, such as a two-part mixed resin, a photocurable resin, or a thermosetting resin. Resins such as chemically resistant resins can be used. For example, PVC (polyvinyl chloride) Resin, acrylic resin, polyimide resin, epoxy resin, silicone resin, PVB (polyvinyl chloride) (Nylbutyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used. The sealing layer 213 may contain a desiccant. When the light 230 is extracted to the outside of the light emitting panel, a filler with a high refractive index is added to the sealing layer 213. It is preferable that the desiccant, the filler with a high refractive index, and the scattering material are included. The materials that can be used for the adhesive layer 105 can be mentioned.

[0170] The conductive layer 156, the conductive layer 157, the conductive layer 294, and the conductive layer 296 are transistors. The conductive layer constituting the light emitting element can be formed using the same material and in the same process. Layer 280 can be formed using the same materials and processes as the conductive layers that make up the transistors.

[0171] For example, the conductive layers may be made of molybdenum, titanium, chromium, tantalum, or tungsten. Metallic materials such as tin, aluminum, copper, neodymium, scandium, etc., or alloys containing these elements The conductive layer can be formed of a single layer or a multilayer structure using a gold material. Each of the electrodes may be formed using a conductive metal oxide. Indium (In2O3, etc.), tin oxide (SnO2, etc.), zinc oxide (ZnO), ITO, Indium zinc oxide (In2O3-ZnO, etc.) or these metal oxide materials with silicon oxide It is possible to use a material containing

[0172] In addition, the conductive layer 208, the conductive layer 212, the conductive layer 310a, and the conductive layer 310b are also The insulating film can be formed using the above-mentioned metal materials, alloy materials, conductive metal oxides, or the like.

[0173] The conductive layers 272 and 274, and the conductive layers 281 and 283 have a light-transmitting property. It is a conductive layer that is used to form a thin film. Examples include indium oxide, ITO, indium zinc oxide, and zinc oxide. For example, zinc oxide doped with gallium can be used. It can be formed using the same material and process as 72.

[0174] The conductive particles 292 are particles of organic resin or silica, etc., whose surfaces are coated with a metal material. It is preferable to use nickel or gold as the metal material because this reduces the contact resistance. In addition, particles that are coated with layers of two or more metal materials, such as nickel coated with gold, It is preferable to use:

[0175] The connector 215 is a paste or sheet made of a thermosetting resin mixed with metal particles. The metal particles can be of a material that exhibits anisotropic conductivity when bonded by heat. are particles that have layers of two or more metals, such as nickel particles coated with gold. It is preferable to use:

[0176] The colored layer 259 is a colored layer that transmits light of a specific wavelength band. For example, A red (R) color filter transmits light, and a green (G) color filter transmits light in the green wavelength range. A color filter, such as a blue (B) color filter that transmits light in the blue wavelength range, is used. Each color layer can be formed by using various materials and applying a printing method, an inkjet method, a photo method, etc. They are formed at desired positions by an etching method using lithography or the like.

[0177] In addition, a light-shielding layer 257 is provided between the adjacent colored layers 259. It blocks light that goes around from adjacent light emitting elements and suppresses color mixing between adjacent pixels. The end of the colored layer 259 is provided so as to overlap with the light-shielding layer 257, thereby suppressing light leakage. The light-shielding layer 257 can be made of a material that blocks light emitted from the light-emitting element. The insulating layer 11 can be formed by using a metal material or a resin material containing a pigment or dye. As shown in FIG. 1B, the light shielding layer 257 is disposed in an area other than the light extraction unit 104 such as the driving circuit unit 106. It is preferable to provide the light emitting diode in the above-mentioned region, since this can suppress unintended light leakage due to guided light or the like.

[0178] In addition, when an insulating layer 261 is provided to cover the colored layer 259 and the light-shielding layer 257, This is preferable because it can prevent impurities such as pigments contained in the layer 257 from diffusing into the light emitting element and the like. The insulating layer 261 is preferably made of a light-transmitting material, and may be made of an inorganic insulating material or an organic insulating material. The insulating layer 261 may be made of the insulating film having low water permeability. If not required, it need not be provided.

[0179] <Production method example> Next, a method for manufacturing a light-emitting panel will be illustrated with reference to FIGS. 11 and 12. The light-emitting panel having the configuration shown in FIG. 7B will be used as an example for explanation.

[0180] First, a peeling layer 303 is formed on a substrate 301, and an insulating layer 205 is formed on the peeling layer 303. Next, a plurality of transistors, a conductive layer 157, an insulating layer 207, and an insulating The layer 209, a plurality of light-emitting elements, and an insulating layer 211 are formed. Insulating layers 211, 209, and 207 are opened so that the insulating layers 211, 209, and 207 are exposed (FIG. 11(A)). .

[0181] In addition, a peeling layer 307 is formed on the formation substrate 305, and an insulating layer 255 is formed on the peeling layer 307. Next, a light-shielding layer 257, a coloring layer 259, and an insulating layer 261 are formed on the insulating layer 255. (Figure 11(B)).

[0182] The substrates 301 and 305 are made of a glass substrate, a quartz substrate, and a sapphire substrate, respectively. A metal substrate, a ceramic substrate, a metal substrate, or the like can be used.

[0183] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. For example, a glass material such as barium borosilicate glass can be used. If the strain point is high, it is advisable to use one with a strain point of 730°C or higher. By adding more aO), a more practical heat-resistant glass can be obtained. etc. can be used.

[0184] When a glass substrate is used as the substrate, a silicon oxide film or an oxide When an insulating film such as a silicon nitride film, a silicon nitride film, or a silicon oxynitride film is formed, the glass This is preferable since it can prevent contamination from the substrate.

[0185] The peeling layers 303 and 307 are made of tungsten, molybdenum, and titanium, respectively. , Tantalum, Niobium, Nickel, Cobalt, Zirconium, Zinc, Ruthenium, Rhodium an element selected from the group consisting of palladium, osmium, iridium, and silicon; It is made of a gold material or a compound material containing this element, and is a single layer or a laminated layer. Silicon The crystal structure of the layer containing may be amorphous, microcrystalline, or polycrystalline.

[0186] The release layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet discharging method, and a dispensing method.

[0187] When the peeling layer has a single layer structure, it is made of a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten oxide or oxide. a layer containing an oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten Alternatively, a layer containing an oxide or oxynitride of a mixture of tantalum and molybdenum may be formed. A mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. do.

[0188] In addition, a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten may be used as the peeling layer. In the case of forming a tungsten-containing layer, an insulating film made of oxide is formed on the tungsten-containing layer. By forming the insulating film, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film. In addition, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. , oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, ozone water, and other highly oxidizing solvents Alternatively, a layer containing tungsten oxide may be formed by performing a treatment with a liquid or the like. The treatment and heating process may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating layer that is formed later. do.

[0189] Each insulating layer is formed using a method such as sputtering, plasma CVD, coating, or printing. For example, the film formation temperature can be increased to 250°C or higher, up to 400°C, using the plasma CVD method. By forming the membrane as described below, it is possible to obtain a dense membrane with extremely low water permeability.

[0190] Then, the surface of the production substrate 305 on which the colored layer 259 and the like are provided or the light emitting element of the production substrate 301 is A material that will become the sealing layer 213 is applied to the surface on which the 230, etc. are provided, and the surface is sealed with the sealing layer 213. The fabrication substrate 301 and the fabrication substrate 305 are bonded together so that they face each other (FIG. 11(C) )).

[0191] Then, the fabrication substrate 301 is peeled off, and the exposed insulating layer 205 and substrate 201 are bonded to the adhesive layer 203. The substrate 305 is peeled off, and the insulating layer 255 and the substrate 1 are bonded to each other. 12A, the substrate 103 is bonded to the conductive layer 103 using an adhesive layer 105. Although the conductive layer 157 does not overlap with the substrate 103, the conductive layer 157 and the substrate 103 may overlap with each other.

[0192] For example, a peeling layer may be formed by a method using a film to be peeled off. When a layer containing a metal oxide film is formed on the side in contact with the peeled layer, the metal oxide film is crystallized. The layer to be peeled off can be peeled off from the substrate by weakening the layer. When an amorphous silicon film containing hydrogen is formed as a peeling layer between the plate and the peeled layer, the laser beam The amorphous silicon film is removed by irradiation or etching, so that the layer to be peeled off is separated from the production substrate. In addition, the peeling layer may include a layer including a metal oxide film on the side in contact with the layer to be peeled. The metal oxide film is weakened by crystallization, and a part of the peeling layer is dissolved in a solution or NF3 After removing the gold by etching using fluoride gas such as BrF3 or ClF3, the weakened gold Furthermore, nitrogen, oxygen, hydrogen, etc. can be used as a peeling layer. A film containing hydrogen (e.g., an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used. The peeling layer is irradiated with laser light to release nitrogen, oxygen, and hydrogen contained in the peeling layer as gas. A method of accelerating the peeling between the peeled layer and the substrate may be used. The substrate is mechanically removed or fluorinated with a solution or fluoride gas such as NF3, BrF3, or ClF3. A method of removing the film by etching or the like can be used. In this case, it is not necessary to provide a peeling layer. stomach.

[0193] Moreover, by combining a plurality of the above-mentioned peeling methods, the peeling step can be carried out more easily. That is, irradiation with laser light, etching of the peeling layer with gas or solution, or using a sharp knife or knife The peeling layer and the layer to be peeled are then mechanically removed using a tool such as a brush to make them easier to peel from each other. Peeling can also be achieved by physical force (mechanically, etc.).

[0194] In addition, the layer to be peeled off can be peeled off from the substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. Also, during the peeling, liquid such as water may be poured onto the film.

[0195] As for other peeling methods, when the peeling layer is made of tungsten, it is possible to use ammonia water and perchloric acid. The peeling layer may be etched with a mixed solution of hydrogen oxide and water to perform the peeling.

[0196] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Forming organic resins such as olefin, polyamide, polycarbonate, and acrylic, In this case, the organic resin is heated to form an insulating film, a transistor, etc. The substrate can be peeled off at the interface between the substrate and the organic resin. A metal layer is provided, and the metal layer is heated by passing an electric current through the metal layer, and the metal layer is peeled off at the interface between the metal layer and the organic resin. The organic resin peeled off from the substrate may be used as a substrate for a light-emitting panel. The organic resin may be bonded to another substrate using an adhesive.

[0197] Finally, the insulating layer 255 and the sealing layer 213 are opened to expose the conductive layer 157 ( In addition, in the case where the substrate 103 overlaps with the conductive layer 157, the conductive layer 157 The substrate 103 and the adhesive layer 105 are also opened to expose the The method is not particularly limited, and examples thereof include laser ablation, etching, ion beam spectroscopy, and the like. A sputtering method or the like may be used. An incision may be made and part of the membrane may be peeled off using physical force.

[0198] In this manner, a light-emitting panel can be manufactured.

[0199] As described above, the light-emitting panel of the present embodiment includes the substrate 103 and the substrate 201 or the substrate The touch sensor is also included in the configuration. By minimizing the number of substrates, the light extraction efficiency can be improved. This makes it easier to improve image quality and clarity of the display.

[0200] This embodiment mode can be combined with other embodiment modes as appropriate.

[0201] (Embodiment 3) In this embodiment mode, a light-emitting panel will be described with reference to FIG.

[0202] The light-emitting panel shown in FIG. 13 includes a substrate 401, a transistor 240, a light-emitting element 230, an insulating layer 207, insulating layer 209, insulating layer 211, insulating layer 217, space 405, insulating layer 261, light shielding layer 257, a colored layer 259, a light receiving element (p-type semiconductor layer 271, i-type semiconductor layer 273, and n 275), conductive layer 281, conductive layer 283, insulating layer 291, insulating layer 29 3, insulating layer 295, and substrate 403.

[0203] The light-emitting panel includes a substrate 401 and a substrate 403, which surround a light-emitting element 230 and a light-receiving element. The adhesive layer, the substrate 401 and the substrate 402 are arranged in a frame shape. The light emitting element 230 is sealed by 403 .

[0204] In the light-emitting panel of this embodiment, the substrate 403 has a light-transmitting property. The light passes through the colored layer 259, the substrate 403, etc. and is extracted into the atmosphere.

[0205] The light-emitting panel of this embodiment is a touch-operable light-emitting panel. The element can be used to detect the proximity or contact of an object to be detected with the surface of the substrate 403 .

[0206] Optical touch sensors have no effect on detection accuracy even if the surface that the object touches is scratched. Therefore, it is preferable because it has high durability. In addition, optical touch sensors are non-contact sensing. It is possible to apply the present invention to a display device without reducing the clarity of the image. It is also possible to apply the present invention to a large light-emitting panel or a display. Another advantage is that it can be applied to equipment.

[0207] When the optical touch sensor is provided between the substrate 403 and the space 405, the light emitted by the light emitting element 230 This is preferable because it is less susceptible to influences and can improve the S / N ratio.

[0208] The light-shielding layer 257 is located closer to the substrate 401 than the light-receiving element, and overlaps the light-receiving element. The layer 257 can prevent the light emitted by the light emitting element 230 from being irradiated onto the light receiving element. .

[0209] There is no particular limitation on the materials used for the substrate 401 and the substrate 403. The substrate on the side is made of a material that transmits the light. For example, glass, quartz, ceramic, or sapphire The substrate on the side from which light is not extracted is made of a transparent material. In addition to the above-mentioned substrates, substrates using metal materials or alloy materials are also available. A metal substrate or the like may also be used. The substrate materials exemplified in the above embodiment can also be used.

[0210] The sealing method of the light-emitting panel is not limited, and may be, for example, solid sealing or hollow sealing. For example, sealing materials include glass materials such as glass frit and two-liquid mixed resins. Resins such as room temperature curing resins, photocuring resins, and thermosetting resins can be used. The space 405 may be filled with an inert gas such as nitrogen or argon, and a sealing layer The resin may be filled with the same resin as that of 213. In addition, the resin may contain the above-mentioned desiccant, refractive index control agent, etc. High filler or scattering materials may be included.

[0211] This embodiment mode can be combined with other embodiment modes as appropriate. EXAMPLES

[0212] In this example, a light-emitting device according to one embodiment of the present invention was manufactured. Tri-fold folding screen It can also be said that this is a Type display.

[0213] The light-emitting panel of the light-emitting device manufactured in this embodiment is shown in FIG. The light-emitting device produced in this example has different sizes for the substrate 103 and the substrate 201, and displays different colors. This embodiment differs from the specific example 1 (FIG. 7(B)) described in the second embodiment in that an insulating layer 217 is provided between the elements. For other details, refer to the description of specific example 1. For the insulating layer 217, refer to the description of specific example 2. can be referred to.

[0214] The light-emitting panel was manufactured by the manufacturing method shown in Embodiment Mode 2.

[0215] First, a release layer 303 is formed on a glass substrate, which is a substrate 301, and a coating is then formed on the release layer 303. A peeling layer 307 was formed on the glass substrate 305, which was a substrate for preparation. A layer to be peeled was formed on the peeling layer 307. Next, the formation substrate 301 and the formation substrate 305 were The two substrates were then attached to each other so that the surfaces on which the peeled layers were formed faced each other. The plates were each peeled off from the layer to be peeled off, and a flexible substrate was attached to each layer to be peeled off. The materials for each layer are shown below.

[0216] The peeling layers 303 and 307 are made of a tungsten film and an oxide film on the tungsten film. A laminated structure of tungsten films was formed.

[0217] The laminated structure that constitutes the release layer has low peelability immediately after deposition, but it becomes an inorganic insulating film by heat treatment. The reaction occurs, and the state of the interface between the peeling layer and the inorganic insulating film changes, making it brittle. By forming the starting point of peeling, physical peeling becomes possible.

[0218] The layers to be peeled off on the peeling layer 303 are the insulating layer 205, the transistor, and the light-emitting element 230. The layer to be peeled off on the peeling layer 307 was the insulating layer 255. A color filter (corresponding to the colored layer 259) and the like were fabricated.

[0219] The insulating layer 205 and the insulating layer 255 are formed of a silicon oxynitride film and a silicon nitride film, respectively. A layered structure including a silicon film was used.

[0220] The transistor is CAAC-OS (C Axis Aligned Crystall A transistor using a ZnO oxide semiconductor was applied. CAAC-OS is not amorphous, so it has fewer defect levels and improves the reliability of transistors. In addition, since CAAC-OS does not have grain boundaries, it can be used in flexible devices. The CAAC-OS film is less likely to crack due to stress caused by bending the substrate.

[0221] CAAC-OS is an oxide semiconductor whose c-axis is aligned almost perpendicular to the film surface. Another type of conductor crystal structure is nano-crysta, which is a nano-scale aggregate of microcrystals. It was confirmed that various structures exist, such as l(nc), which are different from amorphous and single crystal structures. CAAC has a lower crystallinity than single crystals, but is more crystalline than amorphous and nc. is high.

[0222] In this embodiment, a channel-etched transistor using an In-Ga-Zn oxide is used. The transistor can be fabricated on a glass substrate at a temperature of less than 500°C.

[0223] In the method of directly fabricating elements such as transistors on organic resin such as plastic substrates, The temperature in the manufacturing process must be lower than the heat resistance temperature of the organic resin. The substrate used for the preparation is a glass substrate, and the peeling layer, which is an inorganic film, has high heat resistance. Transistors can be fabricated at the same temperature as when fabricating transistors on a substrate. Therefore, the performance and reliability of the transistor can be easily ensured.

[0224] The light emitting element 230 has a fluorescent light emitting unit having a light emitting layer that emits blue light and a and a phosphorescent light-emitting unit having an emitting layer that emits red light and an emitting layer that emits red light. The light emitting element 230 has a top emission structure. The lower electrode 231 of the element 230 is formed by laminating a titanium film on an aluminum film. An ITO film that functions as an optical adjustment layer is laminated on top of the color filter. The thickness of the optical adjustment layer is set according to the color of each pixel. The combination of the color filter and the microcavity structure allows The light-emitting panel produced in this embodiment can emit light with high color purity. The film 3 and the substrate 201 were made of a flexible organic resin film having a thickness of 20 μm.

[0225] The light-emitting panel we created has a diagonal size of 5.9 inches for the light-emitting part (pixel part) and 720 pixels. ×1280×3(RGB), pixel pitch 0.102mm×0.102mm, resolution 2 The display is 49ppi and the aperture ratio is 45.2%. The scan driver is built-in and the source driver is The battery was attached externally using COF (Chip On Film).

[0226] Figure 19 shows a display photograph of the light-emitting device produced in this example. 19(B) and (C) show the light-emitting device in a folded state. FIG. 19(D) shows the state of the light-emitting device in the folded state. The radius of curvature of the bent portion is 4 mm. Even when the display was folded with the image still displayed, no problems occurred in display or operation. The device uses a sensor to detect whether it is unfolded or folded, and displays different images in each case. This function allows the area of ​​the light-emitting panel that is hidden when folded to be hidden. It also has a function to suspend operation to save power.

[0227] Here, if the light-emitting panel is completely fixed by a pair of protective layers or a pair of support panels, the light-emitting When bending the optical device, the light-emitting panel may be pulled, which may cause damage to the light-emitting panel. When the light-emitting device is deployed, a force is applied in the direction in which the light-emitting panel shrinks, causing damage to the light-emitting panel. The light emitting device manufactured in this embodiment has a pair of protective layers and a pair of support panels. The panel is not completely fixed, so it may be difficult to bend or unfold the light-emitting device. The light-emitting panel slides to contact the pair of protective layers and the pair of support panels. The position of the panel will change, and as a result, force will be applied to the light-emitting panel, which may cause it to break. can be suppressed.

[0228] 20A to 20C show a light-emitting device according to one embodiment of the present invention. When the pair of support panels 15a(1) and 15b(1) is not fixed, The light-emitting panel 11 is made up of a pair of support panels 15a(2) and 15b(2). or is fixed by a pair of support panels 15a(3) and 15b(3). The light emitting device according to one embodiment of the present invention includes a plurality of pairs of support panels. However, at least one pair of support panels is sufficient as long as the light-emitting panel is fixed to the support panel.

[0229] In the light-emitting device in the opened state shown in FIG. 20(A), the light-emitting panel on the dashed line M1-N1 The display of the mobile phone 11 is changing from the unfolded state shown in FIG. 20(B) to the folded state. In the light emitting device in the state, the light emitting device moves along the dashed line M2-N2. In the folded state of the light emitting device, the display moves onto the dashed line M3-N3. In the light-emitting device of one embodiment of the present invention, the light-emitting panel is formed by a pair of protective layers or a pair of support panels. is not completely fixed, so the light-emitting panel may break when folding or unfolding the light-emitting device. As a result, the position of the light-emitting panel relative to the pair of protective layers and the pair of support panels is adjusted. This prevents the light-emitting panel from being damaged by the force applied to it. Cut. [Explanation of symbols]

[0230] 11 Light-emitting panel 11a Light-emitting area 11b Non-luminous area 13 Protective layer 13a Protective layer 13b Protective layer 15 Support Panel 15a Support Panel 15b Support Panel 101 Element layer 103 Substrate 104 Light extraction section 105 Adhesive layer 106 Drive circuit section 108 FPC 108a FPC 108b FPC 156 Conductive Layer 157 Conductive Layer 201 Substrate 202 Substrate 203 Adhesive layer 205 Insulating layer 207 Insulating Layer 208 Conductive Layer 209 Insulating Layer 209a Insulating layer 209b Insulating layer 211 Insulating layer 212 Conductive layer 213 Sealing layer 215 Connectors 215a Connector 215b Connector 217 Insulating Layer 230 Light emitting element 231 Lower Electrode 233 EL layer 235 Upper electrode 240 Transistor 255 Insulation Layer 257 Light blocking layer 259 Colored layer 261 Insulating Layer 270 Conductive Layer 271 p-type semiconductor layer 272 Conductive Layer 273 i-type semiconductor layer 274 Conductive Layer 275 n-type semiconductor layer 276 Insulating Layer 278 Insulating Layer 280 Conductive Layer 281 Conductive Layer 283 Conductive Layer 291 Insulating Layer 292 Conductive Particles 293 Insulating Layer 294 Conductive Layer 295 Insulating Layer 296 Conductive Layer 301 Preparation Board 303 Peeling layer 305 Preparation Board 307 Peeling layer 310a conductive layer 310b conductive layer 401 Substrate 403 Substrate 405 Space

Claims

1. A light-emitting panel having a light-emitting area and a non-light-emitting area surrounding the light-emitting area in a frame shape, A light-emitting device that can be folded with a light-emitting surface of the light-emitting panel inward, a first support and a second support that are located below the light-emitting panel in an unfolded state and are spaced apart from each other; a third support member that is located above the light-emitting panel in an unfolded state and overlaps with the first support member via the light-emitting panel; a fourth support provided above the light-emitting panel and spaced apart from the third support in an unfolded state, and overlapping with the second support via the light-emitting panel; a first protective layer having a region located between the light-emitting panel and the first support and a region located between the light-emitting panel and the second support in an unfolded state; a second protective layer having a region located between the light-emitting panel and the third support and a region located between the light-emitting panel and the fourth support in an unfolded state; In an expanded state, the first protective layer overlaps with each of the light emitting region and the non-light emitting region, In an expanded state, the second protective layer overlaps the non-light-emitting region and does not overlap the light-emitting region; the light-emitting panel has a first region that overlaps a region between the first support and the second support and that overlaps a region between the third support and the fourth support in an unfolded state; the first region is a region that curves when the light emitting device is folded; the first region has a first portion sandwiched between the first protective layer and the second protective layer, The first portion is located in the non-light emitting region.

2. A light-emitting panel having a light-emitting area and a non-light-emitting area surrounding the light-emitting area in a frame shape, A light-emitting device that can be folded with a light-emitting surface of the light-emitting panel inward, a first support and a second support that are located below the light-emitting panel in an unfolded state and are spaced apart from each other; a third support member that is located above the light-emitting panel in an unfolded state and overlaps with the first support member via the light-emitting panel; a fourth support provided above the light-emitting panel and spaced apart from the third support in an unfolded state, and overlapping with the second support via the light-emitting panel; a first protective layer having a region located between the light-emitting panel and the first support and a region located between the light-emitting panel and the second support in an unfolded state; a second protective layer having a region located between the light-emitting panel and the third support and a region located between the light-emitting panel and the fourth support in an unfolded state; In an expanded state, the first protective layer overlaps with each of the light emitting region and the non-light emitting region, In an expanded state, the second protective layer overlaps the non-light-emitting region and does not overlap the light-emitting region; the light-emitting panel has a first region that overlaps a region between the first support and the second support and that overlaps a region between the third support and the fourth support in an unfolded state; the first region is a region that curves when the light emitting device is folded; the first region has a first portion sandwiched between the first protective layer and the second protective layer, the first portion is located in the non-light emitting region; The light emitting device, wherein the light emitting panel is more flexible than each of the first protective layer and the second protective layer.

3. A light-emitting panel having a light-emitting area and a non-light-emitting area surrounding the light-emitting area in a frame shape, A light-emitting device that can be folded with a light-emitting surface of the light-emitting panel inward, a first support and a second support that are located below the light-emitting panel in an unfolded state and are spaced apart from each other; a third support member that is located above the light-emitting panel in an unfolded state and overlaps with the first support member via the light-emitting panel; a fourth support provided above the light-emitting panel and spaced apart from the third support in an unfolded state, and overlapping with the second support via the light-emitting panel; a first protective layer having a region located between the light-emitting panel and the first support and a region located between the light-emitting panel and the second support in an unfolded state; a second protective layer having a region located between the light-emitting panel and the third support and a region located between the light-emitting panel and the fourth support in an unfolded state; In an expanded state, the first protective layer overlaps with each of the light emitting region and the non-light emitting region, In an expanded state, the second protective layer overlaps the non-light-emitting region and does not overlap the light-emitting region; the light-emitting panel has a first region that overlaps a region between the first support and the second support and that overlaps a region between the third support and the fourth support in an unfolded state; the first region is a region that curves when the light emitting device is folded; the first region has a first portion sandwiched between the first protective layer and the second protective layer, the first portion is located in the non-light emitting region; the light-emitting panel includes a drive circuit unit having a first transistor in the non-light-emitting region, the light-emitting panel includes, in the light-emitting region, a second transistor and a light-emitting element electrically connected to the second transistor; A light emitting device, wherein a part of the drive circuitry is located in the first portion.

4. A light-emitting panel having a light-emitting area and a non-light-emitting area surrounding the light-emitting area in a frame shape, A light-emitting device that can be folded with a light-emitting surface of the light-emitting panel inward, a first support and a second support that are located below the light-emitting panel in an unfolded state and are spaced apart from each other; a third support member that is located above the light-emitting panel in an unfolded state and overlaps with the first support member via the light-emitting panel; a fourth support provided above the light-emitting panel and spaced apart from the third support in an unfolded state, and overlapping with the second support via the light-emitting panel; a first protective layer having a region located between the light-emitting panel and the first support and a region located between the light-emitting panel and the second support in an unfolded state; a second protective layer having a region located between the light-emitting panel and the third support and a region located between the light-emitting panel and the fourth support in an unfolded state; In an expanded state, the first protective layer overlaps with each of the light emitting region and the non-light emitting region, In an expanded state, the second protective layer overlaps the non-light-emitting region and does not overlap the light-emitting region; the light-emitting panel has a first region that overlaps a region between the first support and the second support and that overlaps a region between the third support and the fourth support in an unfolded state; the first region is a region that curves when the light emitting device is folded; the first region has a first portion sandwiched between the first protective layer and the second protective layer, the first portion is located in the non-light emitting region; the light-emitting panel is more flexible than each of the first protective layer and the second protective layer; the light-emitting panel includes a drive circuit unit having a first transistor in the non-light-emitting region, the light-emitting panel includes, in the light-emitting region, a second transistor and a light-emitting element electrically connected to the second transistor; A light emitting device, wherein a part of the drive circuitry is located in the first portion.

5. In any one of claims 1 to 4, The second protective layer comprises a rubber.

6. In any one of claims 1 to 4, The second protective layer comprises an organic resin.

7. In any one of claims 1 to 6, The first protective layer comprises a metal.

8. In any one of claims 1 to 7, The first protective layer has a region bonded to the light-emitting panel via an adhesive.

9. In any one of claims 1 to 8, The first protective layer has an area bonded to each of the first support and the second support via an adhesive.

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