Joining device, joining method, and manufacturing method of article

Abstract

To provide a joining device advantageous for joining a second object to a first object.SOLUTION: A joining device which joins a second object to a first object includes: a head which holds the second object and joins the second object to the first object; a first camera which captures an image by imaging the second object held by the head; and a control unit which determines the condition of a joining surface of the second object on the side of the first object on the basis of the image captured by the first camera in a state where the second object is aligned with the head, and controls the head such that the second object held by the head is not joined to the first object when the condition of the joining surface is defective, and such that the second object held by the head is joined to the first object when the condition of the joining surface is excellent.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a joining device, a joining method, and a method for manufacturing an article. [Background technology]

[0002] Regarding a bonding device that bonds semiconductor wafers on which multiple chips are formed, a technology has been proposed that maximizes the number of good chips by rotating one semiconductor wafer relative to the other to stack (bond) them (see Patent Document 1). Also, regarding the bonding device, a technology has been proposed that determines whether chips formed on a semiconductor wafer are good or bad (good / bad) and bonds a mounting substrate only to chips that are determined to be good (see Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-38946 A [Patent Document 2] JP 2010-274347 A Summary of the Invention [Problem to be solved by the invention]

[0004] When an adhesive is used to bond chips in a bonding device, there is no need to remove foreign matter that adheres to the chips when they are transported. On the other hand, when bonding chips by hybrid bonding, foreign matter that adheres to the bonding surface affects the bonding of the chips, so it is preferable to judge the state of the chips, i.e., whether the chips are good or bad, immediately before bonding the chips.

[0005] However, the technologies proposed in Patent Documents 1 and 2 are limited to determining whether chips on a semiconductor wafer are good or bad, and are not capable of determining which chips will become defective during the period from when the chips are peeled off from the semiconductor wafer to when they are bonded (for example, while the chips are being transported).

[0006] The present invention has been made in view of the problems with the conventional technology, and has an exemplified object to provide a joining device that is advantageous for joining a first object to a second object. [Means for solving the problem]

[0007] In order to achieve the above-mentioned object, a joining device as one aspect of the present invention is a joining device for joining a second object to a first object, comprising: a head for holding the second object and joining the second object to the first object; a first camera for capturing an image of the second object held by the head; and a control unit for controlling the head to determine a condition of a joining surface of the second object on the side of the first object based on the image captured by the first camera when the second object is aligned with the head, and to not join the second object held by the head to the first object if the condition of the joining surface is poor, and to join the second object held by the head to the first object if the condition of the joining surface is good.

[0008] Further objects or other aspects of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings. Effect of the Invention

[0009] According to the present invention, for example, a joining device that is advantageous for joining a second object to a first object can be provided. [Brief description of the drawings]

[0010] [Figure 1] 1 is a diagram showing a schematic configuration of a joining device according to one aspect of the present invention; [Diagram 2] FIG. 4 is a top view showing the substrate stage from the +Z direction. [Diagram 3] 5 is a flowchart for explaining a joining operation in the first embodiment. [Figure 4]FIG. 2 is a diagram showing a schematic diagram of a state in which a bonding head holds a die. [Diagram 5] 13A and 13B are diagrams for explaining a method for determining the state of a bonding surface of a die. [Figure 6] 13A and 13B are diagrams for explaining a method for determining the state of a bonding surface of a die. [Figure 7] 1 is a diagram showing a schematic configuration of a bonding unit of a bonding apparatus according to one aspect of the present invention; [Figure 8] 10 is a flowchart for explaining a joining operation in the second embodiment. [Figure 9] 1 is a diagram showing a schematic configuration of a bonding unit of a bonding apparatus according to one aspect of the present invention; [Figure 10] 13 is a flowchart for explaining a joining operation in the third embodiment. [Figure 11] 13 is a flowchart for explaining a joining operation in the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0012] In the following, a substrate (wafer) on which a semiconductor device is formed is referred to as a first object (first bonding object), and an individualized die including a semiconductor device is referred to as a second object (second bonding object), but the present invention is not limited to these.

[0013] The first object includes, in addition to a substrate on which a semiconductor device is formed, for example, a silicon substrate, a silicon substrate on which wiring is formed, a glass substrate, a glass panel on which wiring is formed, and an organic panel (PCB) on which wiring is formed. The first object also includes, for example, a metal panel, and a substrate on which a semiconductor device is formed and a die including some semiconductor devices is already bonded thereto.

[0014] The second object may include, besides a singulated die, for example, a stack of several already singulated dies, small pieces of material, optical elements, MEMS, structures.

[0015] Furthermore, the method of joining the first object and the second object is not limited. The method of joining the first object and the second object includes, for example, joining with an adhesive, joining with a temporary adhesive, joining by hybrid bonding, atomic diffusion bonding, vacuum bonding, bump bonding, etc. In this way, the method of joining the first object and the second object includes various temporary and permanent joining methods.

[0016] As examples of industrial applications of the joining device according to one aspect of the present invention, the following application examples are considered.

[0017] A first application example may be the manufacture of stacked memories. When a bonding apparatus according to one aspect of the present invention is applied to the manufacture of stacked memories, the first object is a substrate (wafer) on which memories, which are semiconductor devices, are manufactured, and the second object is a memory, which is an individualized die. In the manufacture of stacked memories, generally, about eight layers are stacked, so that in the bonding of the eighth layer, the first object is a substrate on which six layers of memories have already been bonded. In addition, the final layer may be a driver that drives the memory.

[0018] As a second application example, heterogeneous integration of a processor is conceivable. In contrast to the mainstream of conventional processors, which are SoCs in which logic circuits and SRAMs are configured in one semiconductor element, each element is manufactured on a separate substrate by applying an optimal process, and then these elements are bonded to manufacture a processor. This makes it possible to reduce the cost of the processor and improve the yield. When the bonding apparatus according to one aspect of the present invention is applied to heterogeneous integration, the first object is a substrate (wafer) on which a logic device, which is a semiconductor device, is formed. The second object is a die such as an SRAM, an antenna, or a driver that is singulated after probing. Since different dies are usually bonded sequentially, the number of bonded objects increases sequentially as the first object. For example, when bonding is started from an SRAM, when bonding the next element of the SRAM, the first object is a logic substrate (wafer) to which the SRAM is bonded. When bonding multiple dies, it is preferable to bond the thinnest die first so that the bonding head does not interfere with the bonded die.

[0019] As a third application example, 2.5D bonding using a silicon interposer is considered. A silicon interposer is a silicon substrate (wafer) on which wiring is formed. In 2.5D bonding, a silicon interposer is used to bond individualized dies to perform electrical bonding between the dies. When a bonding device according to one aspect of the present invention is applied to die bonding to a silicon interposer, the first object is a silicon substrate (wafer) on which wiring is formed, and the second object is an individualized die. In general, since multiple types of dies are bonded to a silicon interposer, the first object also includes a silicon interposer to which several dies are bonded. In addition, when bonding multiple dies, it is preferable to bond the thinnest die first so that the bonding head does not interfere with the bonded dies.

[0020] A fourth application example is 2.1D bonding using an organic interposer or a glass interposer. An organic interposer is an organic panel (PCB substrate, CCL substrate) used as a package substrate on which wiring is formed. A glass interposer is a glass panel on which wiring is formed. 2.1D bonding is bonding a singulated die to an organic interposer or a glass interposer, and electrically bonding between the dies by wiring on the interposer. When a bonding device according to one aspect of the present invention is applied to die bonding to an organic interposer, the first object is an organic panel on which wiring is formed, and the second object is a singulated die. When a bonding device according to one aspect of the present invention is applied to die bonding to a glass interposer, the first object is a glass panel on which wiring is formed, and the second object is a singulated die. Generally, since multiple types of dies are bonded to an organic interposer or a glass interposer, the first object also includes an organic interposer or a glass interposer to which several dies are bonded. Furthermore, when bonding multiple dies together, the order of bonding is preferably such that the thinner die is bonded first, so that the bonding head does not interfere with the already bonded dies.

[0021] A fifth application example is temporary bonding in a fan-out package manufacturing process. A fan-out wafer level package is known in which a singulated die is reconstructed into a wafer shape using a molded resin and packaged. A fan-out panel level package is known in which a singulated die is reconstructed into a panel shape using a molded resin and packaged. These packages are applied to semiconductor manufacturing as advanced packages. In packaging, rewiring from the die to the bumps, or rewiring for bonding different types of dies is formed on a molded reconstructed substrate. In this case, if the arrangement accuracy of the die is low, when the rewiring pattern is transferred using a step-and-repeat exposure device, the rewiring pattern cannot be positioned (aligned) with high accuracy on the die. Therefore, it is required to arrange the die with high accuracy. When the bonding device as one aspect of the present invention is applied to a fan-out package manufacturing process, the first object is a metal panel, and the second object is a singulated die. The singulated die is temporarily bonded to a substrate such as a metal panel by a temporary bonding agent. The metal panel is then peeled off from the molded wafer or panel to produce a reconstituted wafer or panel. When this method is applied to bonding, it is preferable to adjust the bonding position of the bonding device so as to correct the array deformation caused by the molding process.

[0022] As a sixth application example, heterogeneous substrate bonding is considered. For example, in the field of infrared image sensors, InGaAs is known as a highly sensitive material. Therefore, it is possible to manufacture a highly sensitive and high-speed infrared image sensor by using InGaAs for the sensor part that receives light and silicon that realizes high-speed processing for the logic circuit that extracts data. However, only small-diameter substrates (wafers) of InGaAs crystals are mass-produced, such as 4 inches, which are smaller than the mainstream 300 mm silicon substrate. Therefore, a technology has been proposed in which an individualized InGaAs substrate is bonded onto a 300 mm silicon substrate on which a logic circuit is formed. The bonding apparatus as one aspect of the present invention can also be applied to heterogeneous substrate bonding in which substrates made of different materials and of different sizes are bonded. When the bonding apparatus as one aspect of the present invention is applied to heterogeneous substrate bonding, the first object is a large-diameter substrate such as a silicon substrate (wafer), and the second object is a small piece of material such as InGaAs. Such a small piece of material is a sliced ​​crystal, but it is preferable to cut it into a square shape.

[0023] First Embodiment FIG. 1 is a diagram showing a schematic configuration of a bonding apparatus BD according to one aspect of the present invention. The bonding apparatus BD bonds an individualized die 51 (second object) to an arbitrary position of a substrate 6 (first object) such as a wafer. The die 51 is provided in a state arranged (held) on a dicing tape attached to a dicing frame 5. In this specification, directions are indicated by an XYZ coordinate system as shown in each figure. Typically, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The X axis, Y axis, and Z axis are shown as examples of directions that are orthogonal or intersect with each other.

[0024] 1, the bonding device BD has a pickup unit 3 and a bonding unit 4 arranged on a base 1 that is vibration-damped by a mount 2. In this embodiment, the pickup unit 3 and the bonding unit 4 are arranged on one base 1, but the pickup unit 3 and the bonding unit 4 may be arranged individually on separate bases.

[0025] The bonding device BD further includes a control unit CNT configured with an information processing device (computer) including a CPU, a memory, etc. The control unit CNT generally controls each unit of the bonding device BD, for example, the pickup unit 3 and the bonding unit 4, in accordance with a program stored in the storage unit, to operate the bonding device BD.

[0026] The pickup unit 3 includes a pickup head 31, a release head 32, and a die observation camera 311. The pickup unit 3 peels off the die 51 to be bonded to the substrate 6 from the dicing tape by the release head 32, and holds the die 51 peeled off from the dicing tape by suction (adsorption) with the pickup head 31. The pickup head 31 rotates the die 51 by 180 degrees, for example, and passes it to a bonding head 423 of the bonding unit 4.

[0027] The pickup head 31 comes into contact with the bonding surface of the die 51. Therefore, when applying to a bonding method such as hybrid bonding in which bonding is performed by activating the surface, it is preferable to treat the surface that comes into contact with the bonding surface of the pickup head 31. For example, it is preferable to process the surface into a highly stable surface such as a diamond-like carbon (DLC) coat or a fluorine coat, or to process the surface into a small shape such as a high-density pin shape to reduce the contact area.

[0028] A die observation camera 311 (second camera) is provided above the dicing frame 5 adjacent to the pickup head 31. The die observation camera 311 captures an image of the die 51 arranged on the dicing tape. The control unit CNT obtains the positions of the characteristic points (locations) of the die 51 arranged on the dicing tape, the outer diameter of the die 51, and the state of the bonding surface of the die 51 from the image acquired by the die observation camera 311. In this way, the die observation camera 311 cooperates with the control unit CNT to realize the function of measuring the positions of the characteristic points of the die 51, the outer diameter of the die 51, and the state of the bonding surface of the die 51.

[0029] The bonding unit 4 includes a stage base 41 and an upper base 42. A substrate stage 43 is mounted on the stage base 41. The substrate stage 43 is configured to be drivable in the X and Y directions by a driving mechanism (not shown) such as a linear motor. The substrate stage 43 may also be configured to be drivable in rotation about an axis parallel to the Z direction. However, instead of driving the substrate stage 43 in rotation about an axis parallel to the Z direction, the bonding head 423 may drive the die 51 in rotation about an axis parallel to the Z direction.

[0030] The substrate stage 43 is provided with a die observation camera 431 (first camera). The die observation camera 431 captures an image of the die 51 held by the bonding head 423. The control unit CNT obtains the positions of the characteristic points (locations) of the die 51 held by the bonding head 423, the outer diameter dimension of the die 51, and the state of the bonding surface of the die 51 from the image acquired by the die observation camera 431. In this way, the die observation camera 431 cooperates with the control unit CNT to realize a function of measuring the positions of the characteristic points of the die 51, the outer diameter dimension of the die 51, and the state of the bonding surface of the die 51. The substrate stage 43 is provided with a bar mirror 432. The bar mirror 432 is used as a target of the interferometer 422. The substrate stage 43 holds the substrate 6 via a substrate chuck 433.

[0031] The upper base 42 is provided with a substrate observation camera 421. The substrate observation camera 421 captures an image of the substrate 6 held by the substrate stage 43 (substrate chuck 433). The control unit CNT obtains the position of the characteristic point (location) of the substrate 6 held by the substrate stage 43 and the state of the bonding surface of the substrate 6 from the image acquired by the substrate observation camera 421. In this way, the substrate observation camera 421 realizes a function of measuring the position of the characteristic point (location) of the substrate 6 and the state of the bonding surface of the substrate 6 in cooperation with the control unit CNT. The substrate observation camera 421 may be, for example, a camera capable of measuring an element pattern or a mark formed on or inside the substrate by using infrared light as a measurement light.

[0032] The upper base 42 is further provided with an interferometer 422 for measuring the position of the substrate stage 43 using a bar mirror 432 , and a bonding head 423 for holding the die 51 delivered from the pickup head 31 .

[0033] When bonding the die 51 to the substrate 6 (a portion to be bonded), for example, the bonding head 423 is driven downward (-Z direction) to bond the die 51 held by the bonding head 423 to the substrate 6 held by the substrate stage 43. Alternatively, the substrate stage 43 or the substrate chuck 433 may be driven upward (+Z direction) to bond the die 51 held by the bonding head 423 to the substrate 6 held by the substrate stage 43.

[0034] In this embodiment, a configuration is adopted in which the pick-up head 31 rotates the die 51 by 180 degrees and passes it to the bonding head 423. However, one or more die holders may be provided between the pick-up head 31 and the bonding head 423, and the die 51 may be passed from the pick-up head 31 to the die holder, and then the die 51 may be passed from the die holder to the bonding head 423. Also, a drive mechanism for driving the bonding head 423 may be provided to drive the bonding head 423 so that the bonding head 423 receives the die 51 from the pick-up head 31. Note that the bonding device BD may have a plurality of pick-up heads, a plurality of release heads, and a plurality of bonding heads in order to improve productivity.

[0035] FIG. 2 is a top view showing the substrate stage 43 from the +Z direction. The substrate 6 is held by the substrate stage 43 via a substrate chuck 433. The substrate 6 or the substrate stage 43 is positioned with respect to the X direction and Y direction, which are orthogonal or intersect with each other, and the rotation around an axis parallel to the Z direction, which is orthogonal to them. Therefore, the substrate stage 43 is provided with a bar mirror 432, specifically, bar mirrors 432a and 432b. The bar mirror 432a is used as a target for the interferometers 422a and 422c. The control unit CNT can determine the position of the substrate stage 43 in the X direction based on the output from the interferometer 422a, and can determine the rotation (amount of rotation) of the substrate stage 43 around an axis parallel to the Z direction based on the output from the interferometers 422a and 422c. The bar mirror 432b is used as a target for the interferometer 422b. The control unit CNT can determine the position of the substrate stage 43 in the Y direction based on the output from the interferometer 422b. The control unit CNT feedback-controls the substrate 6 or the substrate stage 43 with respect to rotations about axes parallel to the X direction, the Y direction, and the Z direction perpendicular to the X direction, Y direction, and Z direction, based on the outputs from the interferometers 422a, 422b, and 422c. In this manner, the interferometer 422 and the control unit CNT function as a positioning mechanism for positioning the substrate 6 or the substrate stage 43.

[0036] A reference plate 434 is provided on (the upper surface of) the substrate stage 43. In this embodiment, a plurality of marks 434a, 434b, and 434c are arranged (drawn) on the reference plate 434. The reference plate 434 is made of a material with a low thermal expansion coefficient, and the marks 434a, 434b, and 434c are drawn with high positional accuracy. For example, the reference plate 434 is made of a quartz substrate, and the marks 434a, 434b, and 434c are drawn thereon using a drawing method for a semiconductor lithography process. The reference plate 434 has a surface at approximately the same height as the surface of the substrate 6, and can be observed by the substrate observation camera 421, but a separate camera for observing the reference plate 434 may be provided.

[0037] The substrate stage 43 may have a configuration in which a coarse movement stage that is driven in a large range and a fine movement stage that is driven in a small range with high accuracy are combined. In such a configuration, the die observation camera 431, the bar mirrors 432a and 432b, the substrate chuck 433, and the reference plate 434 are provided on the fine movement stage in order to realize high-accuracy positioning.

[0038] Here, a method of guaranteeing the origin position, magnification, X-axis and Y-axis directions (rotation) and orthogonality of the substrate stage 43 using the reference plate 434 will be described. The mark 434a is observed by the substrate observation camera 421, and the measurement value (output value) of the interferometer when the mark 434a is located at the center of the image acquired by the substrate observation camera 421 is set as the origin of the substrate stage 43. Next, the mark 434b is observed by the substrate observation camera 421, and the Y-axis direction (rotation) and the magnification in the Y direction of the substrate stage 43 are determined based on the measurement value of the interferometer when the mark 434b is located at the center of the image acquired by the substrate observation camera 421. Next, the mark 434c is observed by the substrate observation camera 421, and the X-axis direction (rotation) and the magnification in the X direction of the substrate stage 43 are determined based on the measurement value of the interferometer when the mark 434c is located at the center of the image acquired by the substrate observation camera 421.

[0039] In this way, the direction from the mark 434b to the mark 434a of the reference plate 434 is set as the Y axis of the bonding device BD, and the direction from the mark 434c to the mark 434a is set as the X axis of the bonding device BD, and calibration of the axis direction and orthogonality can be performed. Also, calibration can be performed using the distance between the mark 434b and the mark 434a as the scale reference for the Y axis of the bonding device BD, and the distance between the mark 434c and the mark 434a as the scale reference for the X axis of the bonding device BD.

[0040] In an interferometer, the measurement value fluctuates due to a change in the refractive index of the optical path caused by a change in air pressure or temperature. Therefore, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, and the directions (rotations) and orthogonality of the X-axis and Y-axis of the substrate stage 43. In order to reduce the fluctuation in the measurement value of the interferometer, the space in which the substrate stage 43 is placed may be covered with a temperature-controlled chamber, and the temperature inside the temperature-controlled chamber may be controlled.

[0041] In the present embodiment, a case has been described in which the reference plate 434 provided on the substrate stage 43 is observed by the substrate observation camera 421, but the present invention is not limited to this. For example, the reference plate 434 may be provided on the upper base 42, and the reference plate 434 provided on the upper base 42 may be observed by the die observation camera 431 to ensure the origin position, magnification, and X-axis and Y-axis directions (rotation) and orthogonality of the substrate stage 43. Also, instead of performing calibration by observing the reference plate 434, for example, calibration may be performed by abutting against a reference surface, or high-precision positioning may be performed using a position measuring instrument whose absolute value is guaranteed, such as a white light interferometer.

[0042] 3, an operation of the bonding device BD in the first embodiment, that is, a bonding operation (bonding method) for bonding the die 51 to the substrate 6 will be described. As described above, the control unit CNT performs the bonding operation by comprehensively controlling each unit of the bonding device BD.

[0043] In S1001, the substrate 6 is carried into the bonding apparatus BD, and the substrate 6 is held by the substrate stage 43 (substrate chuck 433). If foreign matter adheres to the bonding surface of the substrate 6 (and the bonding surface of the die 51), bonding failure occurs, so the inside (space) of the bonding apparatus BD is maintained at a high cleanliness level, for example, of about class 1. Furthermore, in order to maintain a high level of cleanliness, the substrate 6 is accommodated in a container such as a FOUP that is highly sealed and maintains a high level of cleanliness, and is carried into the bonding apparatus BD from such a container. In addition, in order to increase the level of cleanliness, the substrate 6 may be washed inside the bonding apparatus BD after being carried into the bonding apparatus BD. The substrate 6 carried into the bonding apparatus BD is also subjected to a pre-treatment for bonding. For example, when the substrate 6 and the die 51 are bonded by an adhesive, a treatment for applying an adhesive to the substrate 6 is carried out, and when the substrate 6 and the die 51 are bonded by hybrid bonding, a treatment for activating the bonding surface (surface) of the substrate 6 is carried out. The substrate 6 is roughly aligned by the pre-aligner based on the notch or orientation flat and the outer shape position of the substrate 6 , and is held on the substrate stage 43 via the substrate chuck 433 .

[0044] In S1002, substrate alignment is performed. Specifically, the substrate 6 held by the substrate stage 43 is imaged by the substrate observation camera 421 to obtain an image, and the position of the characteristic point of the substrate 6 is obtained based on the image, and the position of the bonding surface of the substrate 6 is determined. The positional relationship (relative position) between the position of the characteristic point of the substrate 6 and the bonding surface of the substrate 6 is known. Focus adjustment for imaging the substrate 6 with the substrate observation camera 421 is realized, for example, by a focus adjustment mechanism included in the substrate observation camera 421. Focus adjustment for imaging the substrate 6 with the substrate observation camera 421 may also be realized by driving the substrate stage 43 (the substrate 6 held by the substrate stage 43) in the Z direction. In many cases, an alignment mark is formed on the substrate 6, but when no alignment mark is formed, it is sufficient to measure a characteristic point that can specify the position of the substrate 6. For example, the control unit CNT obtains the relative position of the characteristic point (image of the characteristic point) of the substrate 6 with respect to the center of the image acquired by the substrate observation camera 421 as the position of the characteristic point of the substrate 6.

[0045] In order to measure the relative position of the mark with respect to the reference point of the bonding device BD with high accuracy, the offset amount may be obtained in advance. Specifically, the substrate stage 43 is driven so that the mark of the reference plate 434 comes into the field of view of the substrate observation camera 421, and the position of the mark is measured by the substrate observation camera 421. Based on the position of the substrate stage 43 at this time and the position of the mark measured by the substrate observation camera 421, the offset amount with respect to the position of the mark measured by the substrate observation camera 421 is determined. Note that the reference point of the bonding device BD is generally often set to the position of a specific mark on the reference plate 434, but may be another position (for example, the origin position of the substrate stage 43) as long as it is a reference position.

[0046] In addition, since the measurement range in the rotation direction by the interferometer 422 is narrow, the amount of rotation that can be corrected by the substrate stage 43 is small. Therefore, when the amount of rotation of the substrate 6 is large, it is preferable to remove the substrate 6 from the substrate stage 43, correct the rotation of the substrate 6, and then hold the substrate 6 again on the substrate stage 43. In this way, when the substrate 6 is held again on the substrate stage 43, it is necessary to perform substrate alignment again. In the substrate alignment, it is preferable to measure the position in the height direction (Z direction) of the bonding surface of the substrate 6 (so-called surface position) during focus adjustment or by using a height measuring device (not shown). The thickness of the substrate 6 varies, and it is advantageous to measure the surface position of the substrate 6 in order to manage (control) the gap between the substrate 6 and the die 51 with high precision during the bonding operation.

[0047] The substrate stage 43 uses the reference plate 434 to ensure the origin position, magnification, and X-axis and Y-axis directions (rotation) and orthogonality of the substrate stage 43, so the positions of the feature points of the substrate 6 are measured with reference to the origin position, X-axis, and Y-axis of the substrate stage 43. Semiconductor devices to be bonded are formed on the substrate 6 at a constant period. These semiconductor devices are formed by positioning multiple layers with high accuracy in a semiconductor manufacturing device, so they are generally arranged repeatedly at a period with nano-level accuracy. Therefore, in substrate alignment, it is not necessary to measure the positions of the feature points corresponding to all of the bonding target points (semiconductor devices) of the substrate 6. For example, the control unit CNT may measure the positions of measurement target points that are fewer than the number of bonding target points of the substrate 6, and determine the positions of multiple bonding target points of the substrate 6 by statistically processing the measurement results. The measurement target points of the substrate 6 can be determined based on the arrangement information of the semiconductor devices. In order to determine the positions of multiple bonding target points on the substrate 6, the control unit CNT only needs to calculate the origin position of the repeating array of the bonding target points, the rotation amount and orthogonality in the X-axis and Y-axis directions, and the magnification error of the repeating period based on the measurement results of the positions of the measurement target points.

[0048] Furthermore, the substrate stage 43 (substrate chuck 433) preferably has a temperature control function for adjusting the temperature of the substrate 6. For example, when considering a silicon wafer, its thermal expansion coefficient is 3 ppm / degree, and when the diameter is 300 mm, a temperature rise of 1 degree causes a displacement of 150 mm×0.000003=0.00045 mm=450 nm at the outermost circumference. If the portion to be bonded of the substrate 6 is displaced after substrate alignment, bonding cannot be performed with high positional accuracy, so it is preferable to stabilize the temperature of the substrate 6 held by the substrate stage 43 with an accuracy of 0.1 degree or less.

[0049] Furthermore, when the substrate 6 is an interposer on which wiring is formed, the locations to be bonded on the substrate 6 are determined based on the arrangement of the repeatedly formed wiring, not on the arrangement of the semiconductor devices. Note that, when the substrate 6 is a wafer or panel without a pattern, substrate alignment is not performed.

[0050] The process relating to the die 51 that is performed in parallel with or after the loading of the substrate 6 (S1001) and substrate alignment (S1002) will be described.

[0051] In S2001, a dicing frame 5 on which dies 51 separated by a dicer are arranged on a dicing tape is carried into a bonding device BD. Generally, the dicing frame 5 is transported in an unsealed magazine. However, since adhesion of foreign matter to the bonding surface of the dies 51 causes bonding failure, it is preferable to transport the dicing frame 5 in a container that is highly sealed and maintained at a high level of cleanliness. In order to increase the level of cleanliness, the dies 51 arranged on the dicing tape attached to the dicing frame 5 may be washed inside the bonding device BD. The rotation direction and shift position of the dicing frame 5 are roughly positioned based on its external shape by a pre-aligner (not shown).

[0052] In S2002, the pick-up head 31 and the release head 32 pick up the die 51 from the dicing frame 5 (dicing tape). Specifically, the pick-up head 31 and the release head 32 are positioned so that the die 51 to be picked up is positioned (sandwiched) between the pick-up head 31 and the release head 32. Then, the die 51 to be picked up is held by the pick-up head 31 by being peeled off from the dicing frame by the release head 32 while being sucked by the pick-up head 31. The die 51 to be picked up is determined based on, for example, known good die (KGD) information transmitted online to the bonding device BD. Usually, only a good die is picked up, but when a defective die (KBD: known bad die) is to be bonded to a defective bonding target portion (defective semiconductor device) of the substrate 6, the defective die is picked up.

[0053] In S2003, the die 51 held by the pick-up head 31 is transferred (transported) to the bonding head 423, and the die 51 is held by the bonding head 423. FIG. 4 is a diagram showing a schematic diagram of a state in which the bonding head 423 holds the die 51. When the pick-up head 31 picks up the die 51, the bonding surface 51a of the die 51 faces the pick-up head 31. On the other hand, the die 51 is transported to the bonding head 423 so that the non-bonding surface 51b on the opposite side of the bonding surface 51a of the substrate 6 faces the bonding head 423. Therefore, as shown in FIG. 4, the bonding head 423 holds the die 51 with the bonding surface 51a facing the substrate 6 by sucking the non-bonding surface 51b. Note that an element pattern 501 and an alignment mark 502 are formed on the bonding surface 51a of the die 51.

[0054] The die 51 may be transferred to the bonding head 423 by the pickup head 31 directly to the bonding head 423 or via a die holder. In addition, while the die 51 is being transported, pre-processing may be performed on (the bonding surface 51a of) the die 51 for bonding the substrate 6 and the die 51. The pre-processing may include, for example, a cleaning process of (the bonding surface 51a of) the die 51, a process of applying an adhesive in the case of bonding by adhesive, and a process of activating the bonding surface 51a of the die 51 in the case of bonding by hybrid bonding.

[0055] Through the processes of S1001, S1002, S2001, S2002, and S2003, the substrate 6 is held by the substrate stage 43 (substrate chuck 433), and the die 51 is held by the bonding head 423, as shown in FIG.

[0056] In S1003, die alignment is performed. First, the position of the die 51 held by the bonding head 423 is measured. Specifically, the substrate stage 43 is driven so that the characteristic points of the die 51, for example, the element pattern 501 and the alignment mark 502 on the bonding surface 51a of the die 51, are included in the field of view of the die observation camera 431. Focus adjustment for imaging the die 51 with the die observation camera 431 may be realized, for example, by a focus adjustment mechanism included in the die observation camera 431, or may be realized by driving the substrate stage 43 (die observation camera 431) in the Z direction. Note that since the scribe line on which the alignment mark used for alignment in the semiconductor manufacturing process is formed is removed by dicing, the die 51 may not have the alignment mark 502. In such a case, the position of the die 51 may be measured using the end of the arrangement of pads or bumps arranged on the die 51 or the area or outline that can identify the position of the die 51 in a non-periodic arrangement as a characteristic point.

[0057] The bonding part CNT obtains the relative position of the feature point (image of) the die 51 with respect to the center of an image acquired by imaging the die 51 held by the bonding head 423 with the die observation camera 431 as the position of the feature point of the die 51. When measuring the position of the die 51, it is preferable to measure the positions of a plurality of feature points of the die 51 and also measure the rotation (amount of rotation) of the die 51. In order to measure the positions of a plurality of feature points of the die 51, the substrate stage 43 may be driven each time the position of each feature point is measured, or the field of view of the die observation camera 431 may be designed so that a plurality of feature points can be observed at once.

[0058] The rotation of the die 51 can be corrected by rotating the substrate stage 43 when bonding the die 51 to the substrate 6. However, as described above, the measurement range in the rotation direction by the interferometer 422 is narrow, so the amount of rotation that can be corrected by the substrate stage 43 is small. Therefore, when the amount of rotation of the die 51 is large, it is preferable to remove the die 51 from the bonding head 423, correct the rotation of the die 51, and then hold the die 51 again by the bonding head 423. When the die 51 is re-held by the bonding head 423 in this way, it is necessary to perform die alignment again.

[0059] In the die alignment, it is advisable to measure the position (so-called surface position) of the bonding surface 51a of the die 51 in the height direction (Z direction) during focus adjustment or by using a height measuring device (not shown). Since the thickness of the die 51 varies, it is advantageous to measure the surface position of the die 51 in order to manage (control) the gap between the substrate 6 and the die 51 with high accuracy during the bonding operation.

[0060] Furthermore, the height of the die 51 at a plurality of positions may be measured, and the attitude of the die 51 or the substrate 6 may be adjusted by a tilt mechanism (not shown) when bonding the die 51 to the substrate 6. Such a tilt mechanism is incorporated in, for example, the substrate stage 43, the substrate chuck 433, or the bonding head 423.

[0061] In the die alignment, the outer shape of the die 51 is also associated with the positions of the feature points of the die 51 (e.g., the element pattern 501 and the alignment mark 502) based on the positions of the feature points of the die 51. Position information including information indicating the relative positional relationship between the outer shape of the die 51 and the feature points associated in this manner is stored in a storage unit (not shown) of the bonding device BD. Note that such position information may be input from outside the bonding device BD to a storage unit of the bonding device BD and stored therein.

[0062] In addition, in the die alignment, the control unit CNT judges the state (quality) of the bonding surface 51a of the die 51 held by the bonding head 423 based on an image acquired by the die observation camera 431. Here, the state of the bonding surface 51a of the die 51 means a state regarding the quality of the bonding surface 51a of the die 51. The state of the bonding surface 51a of the die 51 includes, for example, the presence or absence of chipping of the outer shape of the bonding surface 51a, the presence or absence of misalignment of the element pattern 501 formed on the bonding surface 51a, the presence or absence of chipping of the element pattern 501 formed on the bonding surface 51a, the presence or absence of adhesion of foreign matter to the bonding surface 51a, and the like.

[0063] For example, in hybrid bonding, if a foreign object adheres to the bonding surface 51a while the die 51 is being transferred from the dicing frame 5 to the bonding head 423, the bonding strength of the die 51 to the substrate 6 may decrease. Therefore, it is important to determine the state of the bonding surface 51a of the die 51 held by the bonding head 423 before (immediately before) bonding the die 51 to the substrate 6.

[0064] Therefore, in this embodiment, before (immediately before) bonding the die 51 to the substrate 6, the state of the bonding surface 51a is determined based on an image acquired by imaging (the bonding surface 51a of) the die 51 held by the bonding head 423 with the die observation camera 431. For example, it is possible to determine the state of the bonding surface 51a of the die 51 by comparing the image acquired by the die observation camera 311 with the image acquired by the die observation camera 431. Here, the image acquired by the die observation camera 311 corresponds to an image of the die 51 before being picked up from the dicing tape, i.e., before being held by the bonding head 423.

[0065] Specifically, as shown in FIG. 5, an image IM1 acquired by the die observation camera 311 is compared with an image IM2, IM3, IM4, or IM5 acquired by the die observation camera 431. When the image IM1 is compared with the image IM2, a chip in the outer shape of the bonding surface 51a is detected, and when the image IM1 is compared with the image IM3, a positional shift of the element pattern 501 formed on the bonding surface 51a is detected. When the image IM1 is compared with the image IM4, a chip in the element pattern 501 formed on the bonding surface 51a is detected, and when the image IM1 is compared with the image IM5, adhesion of a foreign matter to the bonding surface 51a is detected. When such a state is detected, the state of the bonding surface 51a of the die 51 is determined to be poor, and when such a state is not detected, the state of the bonding surface 51a of the die 51 is determined to be good. Note that the state of the bonding surface 51a of the die 51 can also be determined by using a reference image acquired by imaging a die 51 having a bonding surface 51a in a good condition, instead of the image IM1 acquired by the die observation camera 311. FIG. 5 is a diagram for explaining a method for determining the state of the bonding surface 51a of the die 51 held by the bonding head 423.

[0066] In the present embodiment, the image of (the bonding surface 51a of) the die 51 used to determine the state of the bonding surface 51 of the die 51 has been described as an image acquired by the die observation camera 431 in a state in which the die 51 is aligned with the bonding head 423. However, in reality, when the image is acquired by the die observation camera 431, the die 51 is not necessarily aligned with the bonding head 423. When the die 51 is not aligned with the bonding head 423, as shown in FIG. 6, it is necessary to perform image processing on the image IM7 acquired by the die observation camera 431. Specifically, an alignment amount required for alignment of the die 51 with respect to the bonding head 423 is obtained from the image IM7 acquired by the die observation camera 431, and image processing is performed on the image IM7 based on the alignment amount. Then, the state of the bonding surface 51 of the die 51 may be determined based on the image IM8 obtained by image processing the image IM7 acquired by the die observation camera 431. FIG. 6 is a diagram for explaining a method for determining the state of bonding surface 51a of die 51 held by bonding head 423. In FIG.

[0067] Returning to FIG. 3, in S1004, positioning is performed for bonding the substrate 6 and the die 51. Specifically, the substrate stage 43 is driven so that the die 51 is positioned relative to the portion of the substrate 6 to be bonded. At this time, the control unit CNT feedback controls (the position of) the substrate stage 43 based on the measurement result by the interferometer 422. In addition, the control unit CNT determines the target position of the substrate stage 43 by reflecting the position and rotation amount of the substrate 6 and the position and rotation amount of the die 51 obtained in S1002 and S1003. Furthermore, when a shift occurs due to the bonding operation of bonding the die 51 to the substrate 6, the target position of the substrate stage 43 is determined by taking into account the amount of such shift as an offset amount.

[0068] In S1005, the die 51 held by the bonding head 423 is bonded to the substrate 6 held by the substrate stage 43 (substrate chuck 433). In this embodiment, if the state of the bonding surface 51a is determined to be good in the die alignment (S1003), the die 51 held by the bonding head 423 is bonded to the substrate 6. On the other hand, if the state of the bonding surface 51a is determined to be poor in the die alignment (S1003), the die 51 held by the bonding head 423 is not bonded to the substrate 6.

[0069] As an operation for bonding the die 51 and the substrate 6, the bonding head 423 may be raised and lowered, or the substrate stage 43 (substrate chuck 433) may be raised and lowered. In order to suppress a decrease in the positioning accuracy when the bonding head 423 or the substrate stage 43 is raised and lowered, it is preferable to adopt a lifting drive system having high reproducibility for the bonding head 423 or the substrate stage 43. In addition, when the substrate stage 43 is raised and lowered while continuing the feedback control, the width of the bar mirror 432 in the Z direction may be designed so that the bar mirror 432 does not deviate from the optical path of the interferometer 422. On the other hand, when the bonding head 423 is raised and lowered, feedback control may be performed while monitoring the positional deviation in the X direction and the Y direction of the bonding head 423 with an encoder or a gap sensor. In addition, in order to control the gap between the substrate 6 and the die 51 with high precision, a linear encoder may be provided to measure the position in the Z axis direction of the lifting drive system. When the substrate 6 and the die 51 come into contact with each other, the substrate stage 43, which is feedback-controlled using the interferometer 422, is constrained, so the control method may be different before and after the contact, such as stopping the feedback control. Here, the process up to the point where the die 51 is brought into contact with the bonding target portion of the substrate 6 has been described, but in bump bonding, a process required for bonding, such as pressing the die 51 against the substrate 6 with a predetermined pressure, is added. In addition, after the die 51 is bonded to the substrate 6, a process of observing the bonding state between the die 51 and the substrate 6 may be added.

[0070] In S1006, it is determined whether the die 51 has been bonded to all of the bonding target locations on the substrate 6. Generally, the substrate 6 has several tens to several hundreds of bonding target locations (semiconductor devices), and the die 51 is bonded to each bonding target location, so that the bonding of the die 51 to the substrate 6 is repeated multiple times. If the die 51 has not been bonded to all of the bonding target locations on the substrate 6, the process proceeds to S2002 in order to bond the die 51 to the next bonding target location on the substrate 6. Note that in this embodiment, after bonding (S1005), it is determined whether the die 51 has been bonded to all of the bonding target locations on the substrate 6, and the die 51 is picked up (S2002). However, the die 51 pick up (S2002) may be performed in parallel between the die alignment (S1003) and bonding (S1005). Furthermore, when multiple types of dies are bonded to one bonding target location (semiconductor device), bonding of the next type of die is started after bonding of one type of die is completed for all bonding target locations of one substrate 6. In this case, in S2002, the next type of die is picked up. At this time, necessary processing such as the operation of carrying in a dicing frame corresponding to the next type of die is performed.

[0071] When the die 51 has been bonded to all of the bonding target locations of the substrate 6, the process proceeds to S1007. In S1007, the substrate 6 to which the die 51 has been bonded is carried out from the bonding device BD. The substrate 6 may be returned to the FOUP or to another container. However, in general, the substrate 6 is returned to another container because the thickness of the substrate 6 changes when the die 51 is bonded and the gap between the substrates 6 needs to be made wider when the substrates 6 are stored compared to the substrates before bonding.

[0072] In this embodiment, the joining operation for joining a plurality of dies 51 to one substrate 6 has been described, but such joining operation is repeated for the required number of substrates 6. Note that the number of dies 51 arranged on the dicing tape attached to the dicing frame 5 is generally different from the number of joining target portions (semiconductor devices) of the substrate 6, so that the carrying-in of the substrate 6 and the carrying-in of the dicing frame 5 are not synchronized. If the dies 51 disappear from the dicing frame 5 while the dies 51 are being joined to one substrate 6, a new dicing frame 5 is carried in. Also, if the dies 51 remain on the dicing frame 5 even after the dies 51 have been joined to all joining target portions of one substrate 6, those dies 51 are used for joining to the next substrate 6.

[0073] In this way, according to this embodiment, it is possible to determine the state (good or bad) of the bonding surface 51a of the die 51 immediately before bonding the die 51 to the substrate 6. For example, it is possible to determine which die 51 will become defective while the die 51 is being transported from the dicing frame 5 to the bonding head 423. Therefore, in this embodiment, it is possible to provide a bonding device BD that is advantageous for bonding the die 51 to the substrate 6.

[0074] <Second embodiment> When foreign matter is attached to the bonding surface 51a of the die 51 held by the bonding head 423, it is preferable to perform cleaning inside the bonding device BD to remove the foreign matter attached to the bonding surface 51a of the die 51. Therefore, as shown in Fig. 7, the bonding device BD may be provided with a cleaning unit 435 that performs cleaning to remove the foreign matter attached to the bonding surface 51a of the die 51 held by the bonding head 423. Fig. 7 is a diagram showing a schematic configuration of the bonding unit 4 of the bonding device BD.

[0075] The cleaning unit 435 is provided on the substrate stage 43 in the bonding unit 4 so as to face, for example, the bonding surface 51a of the die 51 held by the bonding head 423. In this embodiment, the cleaning unit 435 removes foreign matter adhering to the bonding surface 51a of the die 51 by blowing air against the bonding surface 51a of the die 51 held by the bonding head 423 (i.e., by air blowing). Therefore, the cleaning unit 435 may be provided at a position where it is possible to blow off foreign matter adhering to the bonding surface 51a of the die 51 held by the bonding head 423, and may be provided, for example, on the stage surface plate 41 or the upper base 42. When the cleaning unit 435 is provided in the bonding device BD, it is preferable to also provide a mechanism (for example, a vacuum mechanism) for discharging foreign matter blown off from the bonding surface 51a of the die 51 by the cleaning unit 435 from the bonding device BD.

[0076] 8, the operation of the bonding apparatus BD in the second embodiment, that is, the bonding operation (bonding method) of bonding the die 51 to the substrate 6 will be described. As described above, the bonding operation is performed by the control unit CNT comprehensively controlling each part of the bonding apparatus BD. The bonding operation in this embodiment differs from the bonding operation in the first embodiment (FIG. 3) in that it includes processes of S3001, S3002, and S3003 between the die alignment (S1003) and positioning (S1004).

[0077] In S3001, based on the determination (result) of the state of the bonding surface 51a of the die 51 in the die alignment (S1003), it is determined whether or not a foreign object is attached to the bonding surface 51a of the die 51. If no foreign object is attached to the bonding surface 51a of the die 51, the process proceeds to S1004. On the other hand, if a foreign object is attached to the bonding surface 51a of the die 51, the process proceeds to S3002.

[0078] In S3002, the bonding surface 51a of the die 51 held by the bonding head 423 is cleaned. Specifically, as shown in Fig. 7, the substrate stage 43 is driven so that the cleaning unit 435 faces the bonding surface 51a of the die 51 held by the bonding head 423. Then, air is blown from the cleaning unit 435 to the bonding surface 51a of the die 51 to remove foreign matter adhering to the bonding surface 51a of the die 51. Note that the foreign matter blown off from the bonding surface 51a of the die 51 by the cleaning unit 435 is preferably discharged from the bonding device BD by a vacuum mechanism.

[0079] In S3003, in order to determine (check) the state of the bonding surface 51a of the die 51 from which foreign matter has been removed by the cleaning unit 435, die alignment is performed in the same manner as in S1003.

[0080] As described above, according to this embodiment, if foreign matter is attached to the bonding surface 51a of the die 51 immediately before bonding the die 51 to the substrate 6, the foreign matter can be removed to improve the condition of the bonding surface 51a. Therefore, this embodiment can provide a bonding device BD that is advantageous for bonding the die 51 to the substrate 6.

[0081] <Third embodiment> If the condition of the bonding surface 51a of the die 51 held by the bonding head 423 is defective, the die 51 needs to be discarded. Therefore, as shown in Fig. 9, the bonding device BD may be provided with a storage unit 436 that receives and stores the die 51 whose bonding surface 51a is determined to be defective from the bonding head 423. Fig. 9 is a diagram that shows a schematic configuration of the bonding unit 4 of the bonding device BD.

[0082] The accommodation unit 436 has a structure capable of receiving the die 51 held by the bonding head 423 from the bonding head 423, and is configured to be capable of accommodating a plurality of dies 51. In this embodiment, the accommodation unit 436 is provided on the substrate stage 43, but may be provided at a position capable of receiving the die 51 from the bonding head 423. Instead of delivering the die 51 from the bonding head 423 to the accommodation unit 436, the die 51 may be delivered from the bonding head 423 to the accommodation unit 436 via the pickup head 31. In this case, the accommodation unit 436 is provided at a position capable of receiving the die 51 from the pickup head 31. It is preferable that the accommodation unit 436 has a structure that is easily removable from the bonding device BD and is removable in a state in which the die 51 whose bonding surface 51a is determined to be in a defective state is stored in the accommodation unit 436.

[0083] With reference to Fig. 10, the operation of the bonding apparatus BD in the third embodiment, i.e., the bonding operation (bonding method) of bonding the die 51 to the substrate 6 will be described. As described above, the bonding operation is performed by the control unit CNT comprehensively controlling each part of the bonding apparatus BD. The bonding operation in this embodiment differs from the bonding operation in the first embodiment (Fig. 3) in that it includes processes of S4001, S4002, and S4003 between the die alignment (S1003) and positioning (S1004).

[0084] In S4001, based on the determination (result) of the state of the bonding surface 51a of the die 51 in the die alignment (S1003), it is determined whether the state of the bonding surface 51a of the die 51 is good, i.e., whether the die 51 is a non-defective product. If the die 51 is a non-defective product, the process proceeds to S1004. On the other hand, if the die 51 is not a non-defective product (i.e., if the die 51 is a defective product), the process proceeds to S4002.

[0085] In S4002, the substrate stage 43 is driven so that the housing portion 436 is positioned below the bonding head 423.

[0086] In S4003, the die 51 (defective product) held by the bonding head 423 is passed (transferred) from the bonding head 423 to the accommodation section 436 and accommodated in the accommodation section 436.

[0087] In this way, according to this embodiment, it is possible to store the die 51 determined to be defective in the storage section 436 and discard it immediately before bonding the die 51 to the substrate 6. Therefore, in this embodiment, it is possible to provide a bonding device BD that is advantageous for bonding the die 51 to the substrate 6.

[0088] <Fourth embodiment> It is also possible to operate the bonding apparatus BD by combining the second and third embodiments. With reference to FIG. 11, the operation of the bonding apparatus BD in the fourth embodiment, that is, the bonding operation (bonding method) of bonding the die 51 to the substrate 6 will be described. As described above, such bonding operation is performed by the control unit CNT comprehensively controlling each part of the bonding apparatus BD. The bonding operation in this embodiment differs from the bonding operation in the first embodiment (FIG. 3) in that it includes processes of S3001, S3002, S3003, S4001, S4002, and S4003 between the die alignment (S1003) and positioning (S1004).

[0089] In S3001, based on the determination (result) of the state of the bonding surface 51a of the die 51 in the die alignment (S1003), it is determined whether or not a foreign object is attached to the bonding surface 51a of the die 51. If no foreign object is attached to the bonding surface 51a of the die 51, the process proceeds to S4001. On the other hand, if a foreign object is attached to the bonding surface 51a of the die 51, the process proceeds to S3002.

[0090] In S3002, the bonding surface 51a of the die 51 held by the bonding head 423 is cleaned.

[0091] In S3003, in order to determine (check) the state of the bonding surface 51a of the die 51 from which foreign matter has been removed by the cleaning unit 435, die alignment is performed in the same manner as in S1003.

[0092] In S4001, based on the determination (result) of the state of the bonding surface 51a of the die 51 in the die alignment (S1003 or S3003), it is determined whether the state of the bonding surface 51a of the die 51 is good, i.e., whether the die 51 is a non-defective product. If the die 51 is a non-defective product, the process proceeds to S1004. On the other hand, if the die 51 is not a non-defective product (i.e., if the die 51 is a defective product), the process proceeds to S4002.

[0093] In S4002, the substrate stage 43 is driven so that the housing portion 436 is positioned below the bonding head 423.

[0094] In S4003, the die 51 (defective product) held by the bonding head 423 is passed (transferred) from the bonding head 423 to the accommodation section 436 and accommodated in the accommodation section 436.

[0095] Thus, according to this embodiment, if foreign matter is attached to the bonding surface 51a of the die 51 immediately before bonding the die 51 to the substrate 6, the foreign matter can be removed to improve the condition of the bonding surface 51a. Also, immediately before bonding the die 51 to the substrate 6, it is possible to store the die 51 determined to be defective in the storage section 436 and discard it. Therefore, this embodiment can provide a bonding device BD that is advantageous for bonding the die 51 to the substrate 6.

[0096] In this embodiment, the processes (S3001, S3002, and S3003) described in the second embodiment are performed, followed by the processes (S4001, S4002, and S4003) described in the third embodiment, but this is not limited to this. For example, the processes (S3001, S3002, and S3003) described in the second embodiment may be performed after the processes (S4001, S4002, and S4003) described in the third embodiment.

[0097] <Fifth embodiment> A method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, or a MEMS) using the bonding apparatus BD in the above-described embodiment will be described. The article is manufactured by a process of preparing a first object, a process of preparing a second object, a process of bonding the first object and the second object using the bonding apparatus BD (bonding method (bonding operation)) to form a bonded product, and a process of processing the bonded product in other well-known processes. The other well-known processes include probing, dicing, bonding, packaging, and the like. The method for manufacturing an article in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0098] The disclosure of the present specification includes the following joining apparatus, joining method, and method for manufacturing an article.

[0099] (Item 1) A joining device for joining a first object to a second object, comprising: a head for holding the second object and joining the second object to the first object; a first camera that captures an image of the second object held by the head; a control unit that determines a state of a joining surface of the second object on the side of the first object based on an image acquired by the first camera when the second object is aligned with the head, and controls the head so as not to join the second object held by the head to the first object when the state of the joining surface is poor, and to join the second object held by the head to the first object when the state of the joining surface is good; A joining device comprising:

[0100] (Item 2) a second camera for capturing an image of the second object before it is held by the head; 2. The bonding apparatus according to item 1, wherein the control unit determines a state of the bonding surfaces by comparing an image captured by the first camera with an image captured by the second camera.

[0101] (Item 3) The second object is carried into the joining device while being held by a tape attached to a frame; the second camera captures an image of the second object held by the tape; 3. The joining device according to item 2,

[0102] (Item 4) 2. The bonding apparatus according to item 1, wherein the control unit determines a state of the bonding surface by comparing the image acquired by the first camera with a reference image acquired by imaging the second object having a good state of the bonding surface.

[0103] (Item 5) The bonding device according to any one of items 1 to 4, characterized in that the control unit determines that the condition of the bonding surface is poor when adhesion of a foreign matter to the bonding surface is detected from the image acquired by the first camera.

[0104] (Item 6) 6. The bonding apparatus according to item 5, further comprising a cleaning unit that performs cleaning to remove foreign matter adhering to the bonding surface of the second object held by the head.

[0105] (Item 7) 7. The bonding device according to item 6, wherein the cleaning unit is disposed opposite the bonding surface of the second object held by the head, and removes foreign matter adhering to the bonding surface by blowing air onto the bonding surface.

[0106] (Item 8) The bonding device according to any one of items 1 to 7, characterized in that the control unit determines that the condition of the bonding surface is poor when, from the image acquired by the first camera, chipping of the outer shape of the bonding surface, misalignment of a pattern formed on the bonding surface, chipping of a pattern formed on the bonding surface, or adhesion of a foreign matter to the bonding surface is detected.

[0107] (Item 9) The joining device according to any one of items 1 to 8, further comprising a storage unit that receives from the head and stores the second object, the joining surface of which is determined to be in a poor condition by the control unit.

[0108] (Item 10) A joining device for joining a first object to a second object, comprising: a head for holding the second object and joining the second object to the first object; a camera for capturing an image of the second object held by the head; a control unit that controls the head to determine an alignment amount required for aligning the second object with the head from an image acquired by the camera, to determine a state of a joining surface of the second object on the side of the first object based on a result obtained by image processing the image based on the alignment amount, and to not join the second object held by the head to the first object when the state of the joining surface is poor, and to join the second object held by the head to the first object when the state of the joining surface is good; A joining device comprising:

[0109] (Item 11) A method for joining a first object to a second object, comprising the steps of: imaging the second object held by a head that bonds the second object to the first object to obtain an image; a step of controlling the head so as to determine a state of a joining surface of the second object on the side of the first object based on the image acquired in the step with the second object aligned with the head, and not to join the second object held by the head to the first object if the state of the joining surface is poor, and to join the second object held by the head to the first object if the state of the joining surface is good; A bonding method comprising the steps of:

[0110] (Item 12) A method for joining a first object to a second object, comprising the steps of: imaging the second object held by a head that bonds the second object to the first object to obtain an image; a step of controlling the head so as to determine an alignment amount required for aligning the second object with the head from the image acquired in the step, judge a state of a joining surface of the second object on the side of the first object based on a result obtained by image processing the image based on the alignment amount, and not join the second object held by the head to the first object if the state of the joining surface is poor, and join the second object held by the head to the first object if the state of the joining surface is good; The bonding method according to claim 1,

[0111] (Item 13) Providing a first object; Providing a second object; A step of forming a bonded object by bonding the first object to the second object according to the bonding method according to item 11 or 12; treating the bonded article to produce an article; A method for producing an article, comprising the steps of:

[0112] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0113] BD: Bonding device CNT: Control unit 6: Substrate 51: Die 423: Bonding head 431: Die observation camera

Claims

1. A joining device for joining a second object to a first object, A head that holds the second object and joins the second object to the first object, A first camera that captures an image of the second object held by the head and acquires an image of it, A control unit controls the head to determine the condition of the joining surface of the second object on the first object side based on the image acquired by the first camera, and if the condition of the joining surface is poor, the second object held by the head is not joined to the first object, and if the condition of the joining surface is good, the second object held by the head is joined to the first object. A joining device characterized by having the following features.

2. The system further includes a second camera that captures an image of the second object before it is held by the head, The bonding apparatus according to claim 1, characterized in that the control unit determines the state of the bonding surface by comparing the image acquired by the first camera with the image acquired by the second camera.

3. The second object is brought into the joining device while being held in place by tape attached to the frame. The second camera captures an image of the second object held by the tape and acquires an image. The joining device according to feature 2.

4. The bonding apparatus according to claim 1, characterized in that the control unit determines the state of the bonding surface by comparing the image acquired by the first camera with a reference image acquired by imaging the second object in which the bonding surface is in good condition.

5. The bonding apparatus according to claim 1, characterized in that the control unit determines that the condition of the bonding surface is poor when it detects the presence of foreign matter on the bonding surface from an image acquired by the first camera.

6. The joining apparatus according to claim 5, further comprising a cleaning unit for cleaning to remove foreign matter adhering to the joining surface of the second object held by the head.

7. The joining apparatus according to claim 6, characterized in that the cleaning unit is positioned opposite the joining surface of the second object held by the head, and removes foreign matter adhering to the joining surface by blowing air onto the joining surface.

8. The bonding apparatus according to claim 1, characterized in that the control unit determines that the condition of the bonding surface is poor when it detects from the image acquired by the first camera a defect in the outer shape of the bonding surface, a misalignment of the pattern formed on the bonding surface, a defect in the pattern formed on the bonding surface, or the adhesion of foreign matter to the bonding surface.

9. The joining device according to claim 1, further comprising a receiving unit for receiving and storing the second object, which the control unit has determined to be in a poor condition on the joining surface, from the head.

10. The joining apparatus according to claim 1, characterized in that the control unit determines the state of the joining surface of the second object on the side of the first object based on an image acquired by the first camera when the second object is aligned with the head.

11. A joining device for joining a second object to a first object, A head that holds the second object and joins the second object to the first object, A camera that captures an image of the second object held by the head and acquires an image of it, A control unit controls the head, which determines the amount of alignment required for aligning the second object with the head from an image acquired by the camera, determines the state of the joint surface of the second object on the first object side based on the result obtained by image processing the image based on the alignment amount, and, if the state of the joint surface is poor, does not join the second object held by the head to the first object, and if the state of the joint surface is good, joins the second object held by the head to the first object. A joining device characterized by having the following features.

12. A joining method for joining a second object to a first object, An acquisition step of capturing an image of the second object, which is held by a head that joins the second object to the first object, by imaging the second object, A control step involves determining the state of the joining surface of the second object on the first object side based on the image acquired in the acquisition step, and controlling the head so as not to join the second object held by the head to the first object if the state of the joining surface is poor, and to join the second object held by the head to the first object if the state of the joining surface is good. A joining method characterized by having the following:

13. The joining method according to claim 12, characterized in that the control step determines the state of the joining surface of the second object on the side of the first object based on the image acquired in the acquisition step when the second object is aligned with the head.

14. A joining method for joining a second object to a first object, A step of acquiring an image by imaging the second object, which is held by a head that joins the second object to the first object, A step of controlling the head such that: the amount of alignment required for aligning the second object with the head is determined from the image acquired in the above step; the state of the joining surface of the second object on the first object side is determined based on the result obtained by image processing the image based on the alignment amount; if the state of the joining surface is poor, the head does not join the second object held by the head to the first object; and if the state of the joining surface is good, the head is joined to the first object. A joining method characterized by having the following:

15. The process of preparing the first object, The process of preparing the second object, A step of forming a joined object by joining a second object to a first object according to the joining method described in claim 12 or 14, A process of manufacturing an article by processing the aforementioned joined material, A method for manufacturing an article, characterized by having the following:

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