Directly bonded frame wafer
JP2024545355A5Pending Publication Date: 2025-12-23ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC
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Patent Information
- Application Number
- JP2024539000
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2021-12-27
- Filing Date
- 2022-12-23
- Publication Date
- 2025-12-23
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Abstract
The bonding structure includes a frame element having a cavity formed through its thickness. The frame element is directly bonded to a first element on a first side and directly bonded to a second element on a second side to enclose the cavity. The frame element can include through-substrate vias (TSVs). The bonding layer can be formed with redundant conductive contact pads to enhance the quality and reliability of the direct bond.
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