Method for depositing tungsten wiring film
JP2025007558APending Publication Date: 2025-01-17ULVAC INC
Patent Information
- Application Number
- JP2023109042
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-07-03
- Publication Date
- 2025-01-17
Smart Images

Figure 2025007558000001_ABST
Abstract
To provide a method for depositing a tungsten wiring film, capable of surely achieving the lower resistance of the tungsten wiring film.SOLUTION: A method for depositing a tungsten wiring film comprises: a first step of using tungsten used as a main component as a target and introducing rare gas into a film deposition chamber in a vacuum atmosphere to deposit a first tungsten containing film Wf1 at a predetermined film thickness d1 on the surface of an object Sw to be deposited by a spattering method; and a second step of using the tungsten used as a main component as the target and introducing the rare gas into the film deposition chamber in the vacuum atmosphere to deposit a second tungsten containing film Wf2 on the surface of the first tungsten containing film Wf1 by the spattering method. The temperature of the object Sw to be deposited in the first step is set to a range of 25-250°C; and the temperature of the object Sw to be deposited in the second step is set to a temperature higher than that in the first step.SELECTED DRAWING: Figure 2
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Method of forming tungsten film, method of forming tungsten wiring layer and sputtering device
JP2014107470A