Method for depositing tungsten wiring film

JP2025007558APending Publication Date: 2025-01-17ULVAC INC
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Patent Information

Application Number
JP2023109042
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-07-03
Publication Date
2025-01-17

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Abstract

To provide a method for depositing a tungsten wiring film, capable of surely achieving the lower resistance of the tungsten wiring film.SOLUTION: A method for depositing a tungsten wiring film comprises: a first step of using tungsten used as a main component as a target and introducing rare gas into a film deposition chamber in a vacuum atmosphere to deposit a first tungsten containing film Wf1 at a predetermined film thickness d1 on the surface of an object Sw to be deposited by a spattering method; and a second step of using the tungsten used as a main component as the target and introducing the rare gas into the film deposition chamber in the vacuum atmosphere to deposit a second tungsten containing film Wf2 on the surface of the first tungsten containing film Wf1 by the spattering method. The temperature of the object Sw to be deposited in the first step is set to a range of 25-250°C; and the temperature of the object Sw to be deposited in the second step is set to a temperature higher than that in the first step.SELECTED DRAWING: Figure 2
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Patent Citations

  • Method of forming tungsten film, method of forming tungsten wiring layer and sputtering device

    JP2014107470A