Semiconductor processing tape

Abstract

To provide a semiconductor processing tape in which an adhesion failure is hardly generated when it is bonded to a semiconductor wafer and a ring frame.SOLUTION: A semiconductor processing tape 1 includes a lamination structure having: a dicing film 2 composed of a lamination body of a base material 21 and an adhesive agent layer 22 in contact with the base material 21; an adhesive agent layer 3 in contact with the adhesive agent layer 22; and a peeling film 4 in contact with the adhesive agent layer 3. An area of the dicing film 2 is larger than an area of the adhesive agent layer 3, and the whole surface on the dicing film 2 side of the adhesive agent layer 3 is in contact with the dicing film 2. In addition, the area of the peeling film 4 is larger than the area of the adhesive agent layer 3, and the whole surface on the peeling film 4 side of the adhesive agent layer 3 is in contact with the peeling film 4. The peeling film 4 does not have a cutting 5 along a circumference of the adhesive agent layer 3 in accordance with precut processing of the adhesive agent layer 3, or if the peeling film has the cutting, a depth of the cutting is 25 μm or less.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a tape for semiconductor processing. [Background technology]

[0002] As a processing tape for semiconductor wafers, a semiconductor processing tape in which an adhesive layer is laminated on a dicing film having a pressure-sensitive adhesive layer and a substrate is known. This semiconductor processing tape is usually used as follows. One side of the adhesive layer of the semiconductor processing tape is attached to a semiconductor wafer, and the semiconductor wafer is divided (diced) together with the adhesive layer using a dicing film attached to the opposite side of the adhesive layer as a base to form a semiconductor chip. The semiconductor chip is peeled (picked up) together with the adhesive layer from the dicing film using a pick-up collet on a die bonder device, and then the semiconductor chip is thermocompression-bonded (die-attached) to a wiring board, thereby mounting the semiconductor chip on the wiring board via the adhesive layer. A semiconductor processing tape having a dicing film and an adhesive layer is also called a dicing die-attach film.

[0003] Such semiconductor processing tapes are supplied with the dicing film, adhesive layer, etc. pre-cut to the desired area in order to improve the work efficiency in attaching them to the semiconductor wafer and in attaching them to the ring frame during dicing (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2019 / 230036 Summary of the Invention [Problem to be solved by the invention]

[0005] An example of a precut semiconductor processing tape is shown in Figure 2. Figure 2(A) is a plan view of the precut semiconductor processing tape, and Figure 2(B) is a cross-sectional view taken along line AA showing the layered structure of the semiconductor processing tape. The semiconductor processing tape 1 is composed of a laminate having a dicing film 2, an adhesive layer 3 in contact with the dicing film 2, and a release film 4 in contact with the adhesive layer 3. Although omitted in Figures 2(A) and 2(B), the dicing film 2 is generally a laminate having a pressure-sensitive adhesive layer and a substrate, and in such a semiconductor processing tape, the pressure-sensitive adhesive layer and the adhesive layer are disposed in contact with each other. 2(A), the dicing film 2 is divided into a circular portion (label portion) 2a corresponding to the shape of the ring frame and a peripheral portion 2b by precutting. In the portion between the circular portion 2a and the peripheral portion 2b where the dicing film 2 is not arranged, the release film 4 is exposed. In Fig. 2(A), the adhesive layer 3 is also formed into a circular shape corresponding to the shape of the semiconductor wafer by precutting. The shape of the adhesive layer 3 is a circle with the same center as the circular portion 2a of the dicing film 2, and has a smaller diameter than the circular portion 2a. The dicing film 2 covers the adhesive layer 3, and is in contact with the release film 4 around the periphery of the adhesive layer 3. On the surface of the release film 4 opposite the adhesive layer 3, support tape 6 is provided in two places.

[0006] As described above, the adhesive layer 3 of the semiconductor processing tape 1 is attached to the semiconductor wafer prior to dicing of the semiconductor wafer. One embodiment of attachment to the semiconductor wafer (a form using a tape attachment device) will be described with reference to FIG. The semiconductor processing tape 1 is transported onto a stage 100 on which a ring frame R and a semiconductor wafer W are supported by suction (FIG. 3(A)), and a laminate of a dicing film 2 and an adhesive layer 3 obtained by peeling off the release film 4 is bonded to them. Specifically, the release film 4 is folded back at a steep angle at the tip of a tongue-out jig t of the tape application device, and the semiconductor processing tape 1 is transported together with the release film 4 in the direction of the arrow, while the stage 100 moves to the right side of the figure. As a result, the end of the laminate is peeled off from the release film 4 and pushed forward. (The operation of peeling off the end of the laminate from the release film and lifting it up as the starting point of peeling as described above is called "tip-out (tip-out)".) The tip of the pushed-out laminate is pressed by a lamination roll r, and the laminate is bonded to the ring frame R (FIG. 3(B)), and further bonded to the semiconductor wafer W (FIGS. 3(C) and (D)). In this manner, the adhesive layer 3 is attached to the entire semiconductor wafer W, and the dicing film 2, which has an area larger than that of the adhesive layer 3, is attached to the ring frame R.

[0007] The inventors have studied and found that, when applying using the above-mentioned tape application device, application defects such as peeling of the adhesive layer 3 or wrinkles at the tip of the adhesive layer 3 may occur. Specifically, in the state of FIG. 3(B), at the end of the laminate, the adhesive layer 3 should follow the dicing film 2, but instead follows the release film 4 as shown in FIG. 4(A), resulting in a defect in which the adhesive layer 3 peels off from the dicing film 2, or a defect in which the end of the laminate is not smoothly peeled off from the release film 4 and is attached to the semiconductor wafer with wrinkles at the end as shown in FIG. 4(B). When such application defects occur, the semiconductor wafer must be discarded together with the semiconductor processing tape.

[0008] An object of the present invention is to provide a tape for semiconductor processing which is less likely to cause application defects when applied to a semiconductor wafer and a ring frame. [Means for solving the problem]

[0009] The above object of the present invention is achieved by the following means. [1] A semiconductor processing tape comprising a laminate having a dicing film comprising a substrate and a pressure-sensitive adhesive layer in contact with the substrate, an adhesive layer in contact with the pressure-sensitive adhesive layer, and a release film in contact with the adhesive layer, an area of ​​the dicing film is larger than an area of ​​the adhesive layer, and the entire surface of the adhesive layer on the dicing film side is in contact with the dicing film; and an area of ​​the release film is larger than an area of ​​the adhesive layer, and the entire surface of the adhesive layer on the release film side is in contact with the release film; A semiconductor processing tape, wherein the release film does not have a cut along the periphery of the adhesive layer associated with precutting of the adhesive layer, or if the release film has such a cut, the depth of the cut is 25 μm or less. [2] The tape for semiconductor processing according to [1], wherein the adhesive layer has a thickness of 1 to 200 μm. [3] The semiconductor processing tape according to [1] or [2], wherein the depth of the cut is 5 μm or less. [4] The semiconductor processing tape according to any one of [1] to [3], wherein the release film does not have a cut along the periphery of the adhesive layer associated with precut processing of the adhesive layer. [5] The tape for semiconductor processing according to any one of [1] to [4], wherein the adhesive layer contains an epoxy resin and a phenoxy resin.

[0010] In the present invention, a numerical range expressed using "to" means a range including the numerical values ​​before and after "to" as the lower and upper limits. Effect of the Invention

[0011] The semiconductor processing tape of the present invention can effectively prevent poor attachment when attached to a semiconductor wafer and a ring frame. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a cross-sectional view showing a schematic diagram of one embodiment of the structure of the semiconductor processing tape of the present invention. [Diagram 2] Fig. 2 is an explanatory diagram showing a typical example of a precut semiconductor processing tape, in which Fig. 2(A) is a plan view and Fig. 2(B) is a cross-sectional view taken along line AA in Fig. 2(A). [Diagram 3] 3(A) to 3(D) are schematic cross-sectional views for explaining one embodiment of the application of a semiconductor processing tape. FIG. 3(A) is a schematic cross-sectional view showing the state of the semiconductor processing tape when the tape is exposed. FIG. 3(B) is a schematic cross-sectional view showing the state where an end of the semiconductor processing tape is applied to a ring frame by a laminating roll. FIG. 3(C) is a schematic cross-sectional view showing the state where an adhesive layer of the semiconductor processing tape is applied to a semiconductor wafer. FIG. 3(D) is a schematic cross-sectional view showing the state where the semiconductor processing tape is applied to a semiconductor wafer and a ring frame. [Figure 4] 4(A) and (B) are schematic cross-sectional views for explaining defects that occur when a tape for processing a semiconductor is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] [Tape for semiconductor processing] The semiconductor processing tape of the present invention is a laminate having a dicing film made of a laminate of a substrate and a pressure-sensitive adhesive layer in contact with the substrate, an adhesive layer in contact with the adhesive layer, and a release film in contact with the adhesive layer. In this semiconductor processing tape, the area of ​​the dicing film is larger than the area of ​​the adhesive layer, and the entire surface of the adhesive layer on the dicing film side is in contact with the dicing film, and the area of ​​the release film is larger than the area of ​​the adhesive layer, and the entire surface of the adhesive layer on the release film side is in contact with the release film. The release film does not have a cut along the periphery of the adhesive layer associated with the precut processing of the adhesive layer, or if it has such a cut, the depth of the cut is 25 μm or less.

[0014] The semiconductor processing tape of the present invention can effectively prevent the adhesive layer from peeling off from the dicing film or defects such as wrinkles when the release film is peeled off and the laminate of the dicing film and adhesive layer is attached to an adherend, as the adhesive layer will follow the release film side.

[0015] In the present invention, "precutting of adhesive layer" means a cutting process performed to make the adhesive layer into a desired shape during the manufacturing process of a semiconductor processing tape. This precutting process is usually performed by cutting the adhesive layer formed on a release film into a desired shape using a cutting blade or the like. The adhesive layer portion other than the adhesive layer of the desired shape obtained by cutting is peeled off and removed. In precutting, in order to reliably cut the adhesive layer, it is common to make cuts to a certain depth not only in the adhesive layer but also in the release film. Therefore, the precutting of the adhesive layer causes cuts in the release film along the periphery of the adhesive layer.

[0016] In the present invention, the dicing film is also preferably precut. When the dicing film is precut, a cut is formed in the release film along the periphery of the dicing film due to the precut process, as in the case of the adhesive layer. However, even if a cut is formed due to the precut process, the substrate has a sufficient thickness at the edge of the dicing film, so that poor attachment is unlikely to occur as in the case of the adhesive layer.

[0017] Preferred embodiments of the semiconductor processing tape of the present invention will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below except as defined in the present invention. 1 is a cross-sectional view showing an outline of one embodiment of the laminated structure of the semiconductor processing tape 1 of the present invention before use. The shape and arrangement of each member of the semiconductor processing tape 1 of this embodiment can be the same as that of a general semiconductor processing tape 1 shown in FIG. As shown in Figure 1, the semiconductor processing tape 1 of this embodiment comprises a laminate having a dicing film 2 consisting of a laminate of a base material 21 and an adhesive layer 22, an adhesive layer 3 in contact with the adhesive layer 22, and a release film 4 in contact with the adhesive layer 3.

[0018] As shown in FIG. 2(A), when the dicing film 2 is viewed in a plane, the dicing film 2 in this embodiment is divided into a label portion (2a drawn in a circle in FIG. 2) including a shape corresponding to the ring frame and a peripheral portion (2b in FIG. 2) formed on the outside of the label portion. In this embodiment, the peripheral portion 2b is formed, but the peripheral portion 2b may not be formed and only the label portion 2a may be formed. In the present invention, the "area of ​​the dicing film" means the area of ​​the label portion 2a when the dicing film 2 is viewed in a plane, and does not include the area of ​​the peripheral portion 2b. The area of ​​the dicing film 2 may be an area that can be attached to the ring frame. In addition, the "shape of the dicing film 2" means the shape of the label portion 2a when the dicing film 2 is viewed in a plane. The shape of the dicing film 2 is not particularly limited as long as it can cover the opening of the ring frame, and is preferably circular. In this embodiment, a part of the dicing film 2 is cut and removed by precutting, and this part exposes the release film 4. In this embodiment, an exposed part of the release film 4 is formed in this way, but the exposed part does not have to be formed.

[0019] In the present invention, the "area of ​​the adhesive layer" refers to the "area of ​​the adhesive layer" when the dicing film 2 is removed from the semiconductor processing tape 1 and the adhesive layer 3 is viewed in plan. The area of ​​the adhesive layer 3 is an area that can cover a semiconductor wafer. In addition, the "shape of the adhesive layer" refers to the shape of the adhesive layer 3 when viewed in plan. The shape of the adhesive layer 3 is not particularly limited as long as it can cover the entire back surface of the semiconductor wafer, and is preferably circular. In the semiconductor processing tape 1 of this embodiment, the area of ​​the dicing film 2 is larger than that of the adhesive layer 3, and when the film 4 is removed from the semiconductor processing tape 1 and the adhesive layer 3 and the pressure-sensitive adhesive layer 22 are viewed in a planar view, it is preferable that a portion of the pressure-sensitive adhesive layer 22 is exposed all around the adhesive layer 3.

[0020] In the present invention, the "area of ​​the release film" means the "area of ​​the release film" when the release film 4 is viewed in plan. In this embodiment, the release film 4 is larger than the area of ​​the adhesive layer 3. The area of ​​the release film 4 is preferably larger than the area of ​​the dicing film 2.

[0021] 1 and 2, the area of ​​the dicing film 2 in this embodiment is larger than the area of ​​the adhesive layer 3, and the entire surface of the adhesive layer 3 on the dicing film 2 side is in contact with the dicing film 2. Furthermore, the area of ​​the release film 4 is larger than the area of ​​the adhesive layer 3, and the entire surface of the adhesive layer 3 on the release film 4 side is in contact with the release film 4. Outside the periphery of the adhesive layer 3, the end of the circular portion of the dicing film 2 and the release film 4 are in contact.

[0022] In this embodiment, the release film 4 has cuts 5 of 25 μm or less at positions along the periphery of the adhesive layer 3 due to precutting of the adhesive layer 3. That is, the release film 4 has cuts 5 of 25 μm or less in its thickness direction that follow the peripheral shape of the adhesive layer 3. In this embodiment, the cuts 5 of 25 μm or less are formed, but it is also preferable that the cuts 5 are not formed. The incision 5 is usually formed in a direction approximately perpendicular to the main plane of the release film 4 on the side with which the adhesive layer 3 is in contact. The depth of the cut 5 is preferably 22 μm or less, more preferably 15 μm or less, even more preferably 10 μm or less, still more preferably less than 6 μm, even more preferably 5 μm or less, still more preferably 4 μm or less, still more preferably 3 μm or less, still more preferably 2 μm or less, and even more preferably 1 μm or less. The depth of the cut 5 can be measured by observing the cross section with a microscope. The depth of the cut 5 can be controlled by adjusting the conditions of the precutting process. It is also preferable that the release film 4 has a form that does not have a cut along the periphery of the adhesive layer 3 associated with the precut processing of the adhesive layer 3. A release film 4 having such a form can usually be obtained by forming the adhesive layer 3 on the release film 4 as a coating layer or a transfer layer having a desired area and shape.

[0023] The ratio of the depth of the incision 5 to the thickness of the release film 4 (100 × depth of the incision 5 / thickness of the release film 4) is not particularly limited as long as the depth of the incision is 25 μm or less. The ratio of the depth of the incision 5 to the thickness of the release film 4 depends on the thickness of the release film 4, but is preferably 65% ​​or less, more preferably 61% or less, even more preferably 45% or less, even more preferably 35% or less, even more preferably 30% or less, even more preferably 25% or less, even more preferably 20% or less, even more preferably 15% or less, even more preferably 10% or less, and particularly preferably 5% or less.

[0024] In this embodiment, the support tape 6 is disposed in two places on the surface of the release film 4 opposite to the adhesive layer 3. In this embodiment, the support tape 6 is disposed, but the support tape 6 does not have to be disposed. Another preferred embodiment of the present invention is a form in which the support tape 6 is not disposed. When the support tape 6 is disposed, the portion where the support tape 6 and the release film 4 are laminated is thicker than the portion where only the release film 4 is formed without the support tape 6. If the cut 5 is formed in such a laminated portion, poor application may be more likely to occur.

[0025] The semiconductor processing tape 1 of the present invention may have a plurality of laminates of the dicing film 2 and the adhesive layer 3 on a long release film 4, or may have one laminate of the dicing film 2 and the adhesive layer 3 on the release film 4. When the semiconductor processing tape 1 of the present invention is long, it is usually supplied in a rolled state. For example, in FIG. 2(A), two laminates of the dicing film 2 and the adhesive layer 3 are formed on the release film 4.

[0026] Each member constituting the semiconductor processing tape 1 of the present invention will be described in more detail.

[0027] <Dicing film 2> The dicing film 2 constituting the semiconductor processing tape 1 of the present invention has a substrate 21 and an adhesive layer 22 .

[0028] -Base material 21- The substrate 21 can be made of various resin materials. Among them, those made of a resin material selected from polyolefin resin and polyvinyl chloride resin are preferable. It is also preferable that these resin materials have a cross-linked structure. The bond that contributes to the formation of the cross-linked structure may be a covalent bond, a bond based on ionic interaction, or a hydrogen bond.

[0029] Examples of the polyolefin resin include homopolymer or copolymer resins of α-olefins such as polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid alkyl ester copolymer (ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-methyl methacrylate copolymer, etc.), ethylene-(meth)acrylic acid copolymer, and ionomer, or mixtures thereof.

[0030] In particular, ionomer resins, which are synthetic resins that utilize the cohesive force of metal ions to form polymer aggregates, are preferred, and examples thereof include ionomer resins in which an ethylene-(meth)acrylic acid binary copolymer or an ethylene-(meth)acrylic acid-(meth)acrylic acid alkyl ester ternary copolymer is crosslinked with metal ions. These are suitable for the expanding process in terms of uniform expandability. The metal ions contained in the ionomer resins are not particularly limited, and examples include zinc ions and sodium ions. Zinc ions are preferred in terms of low elution and low contamination. In general, ionomer resins have a greater restoring force against tension than resins without metal ions, and experience a greater shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, ionomer resins are preferable in that they can be used in a heat shrink step in which the slack generated in the tape after the expanding step is removed by thermal shrinkage and the tape is tensioned to stably maintain the spacing between the individual semiconductor chips.

[0031] In addition to the above ionomer resins, thermoplastic crosslinked resins obtained by crosslinking a resin selected from low-density polyethylene having a specific gravity of 0.910 or more and less than 0.930, ultra-low-density polyethylene having a specific gravity of less than 0.910, and ethylene-vinyl acetate copolymer are also suitable. As a method of crosslinking, a method of irradiating the resin with energy rays such as electron beams can be mentioned. Such a thermoplastic crosslinked resin has a certain degree of uniform extensibility because crosslinked and non-crosslinked sites coexist in the resin. In addition, such a thermoplastic crosslinked resin contains almost no chlorine atoms in the molecular chain structure, so that even if the tape that is no longer needed after use is incinerated, it does not generate chlorinated aromatic hydrocarbons such as dioxins and their analogues, and the environmental load is small. By appropriately adjusting the amount of energy rays irradiated to the polyethylene or ethylene-vinyl acetate copolymer, a resin having sufficient uniform extensibility can be obtained.

[0032] The substrate 21 may be a single layer or multiple layers. The resin material constituting the base material 21 is preferably an ionomer resin of an ethylene-(meth)acrylic acid copolymer, and more preferably an ionomer resin of an ethylene-(meth)acrylic acid-(meth)acrylic acid alkyl ester terpolymer.

[0033] The thickness of the substrate 21 is not particularly limited, and is preferably 50 to 200 μm, more preferably 60 to 160 μm, and further preferably 70 to 150 μm. The thickness of the substrate 21 is preferably thicker than the thickness of the adhesive layer 3.

[0034] -Adhesive layer 22- The adhesive layer 22 is not particularly limited as long as it has the retention properties to such an extent that it does not peel off from the adhesive layer 3 and the ring frame R during the dicing process and the properties that allow it to be peeled off from the adhesive layer 3 when picked up. The adhesive constituting the adhesive layer 22 is not particularly limited as long as it exhibits the above-mentioned characteristics, and general adhesives used in dicing film applications, such as acrylic adhesives and rubber-based adhesives, can be used as appropriate. Among these, energy ray-curable adhesives are preferred. If an energy ray-curable adhesive is used, picking up becomes easier by curing it before the pick-up step. Here, the energy ray refers to light rays such as ultraviolet rays, or ionizing radiation such as electron beams. As the adhesive constituting the adhesive layer 22, a normal adhesive used as an adhesive for a dicing film can be used without any particular limitation. For the components, characteristics, and manufacturing method of the adhesive, reference can be made to, for example, paragraphs

[0039] to

[0076] of Japanese Patent No. 6928852, paragraphs

[0033] to

[0052] of Japanese Patent No. 6989561, and paragraphs

[0031] to

[0057] of Japanese Patent Publication No. 2023-13022.

[0035] The adhesive constituting the adhesive layer 22 is preferably an acrylic adhesive containing a (meth)acrylic resin as a base polymer, and more preferably an acrylic adhesive containing at least one of a (meth)acrylic acid alkyl ester and (meth)acrylic acid as a constituent. The (meth)acrylic acid alkyl ester preferably further has a radiation curable group introduced into the side chain, and more preferably has a (meth)acrylic acid ester having an isocyanate group added thereto. The adhesive may further contain a radiation curable oligomer, for example, a urethane (meth)acrylate oligomer.

[0036] The pressure-sensitive adhesive layer 22 may contain a curing agent. Examples of the curing agent include a polyisocyanate compound. The pressure-sensitive adhesive layer 22 may also contain a photopolymerization initiator.

[0037] The thickness of the pressure-sensitive adhesive layer 22 is not particularly limited, but is preferably 2 to 35 μm, more preferably 5 to 30 μm, and even more preferably 5 to 20 μm. The thickness of the adhesive layer 22 can be measured by a contact linear gauge method (desktop contact type thickness measuring device).

[0038] <Adhesive layer 3> The adhesive layer 3 is not particularly limited as long as it has the property of being peelable from the pressure-sensitive adhesive layer 22 when picked up after dicing, and acts as an adhesive when fixing the semiconductor chip to an adherend. The adhesive constituting the adhesive layer 3 preferably contains an epoxy resin and a polymer component, more preferably contains an epoxy resin and a urethane resin, or an epoxy resin and a phenoxy resin, and even more preferably contains an epoxy resin and a phenoxy resin. The adhesive may contain a filler. The adhesive usually contains a hardener. In the semiconductor processing tape 1 of the present invention, the adhesive constituting the adhesive layer 3 is in a pre-cured state, that is, in a B-stage state. In a preferred embodiment of the present invention, the adhesive preferably comprises an epoxy resin, a polymer component, a filler, and a curing agent. Each component will now be described.

[0039] -Epoxy resin- The epoxy resin is a thermosetting resin having an epoxy group, and has an epoxy equivalent of 1000 g / eq or less. The epoxy resin may be liquid, solid, or semi-solid. In the present invention, the term "liquid" refers to a resin having a softening point of less than 25°C, the term "solid" refers to a resin having a softening point of 60°C or more, and the term "semi-solid" refers to a resin having a softening point between the softening point of the liquid and the softening point of the solid (25°C or more and less than 60°C). The epoxy resin used in the present invention preferably has a softening point of 100°C or less, from the viewpoint of obtaining an adhesive that can reach a low melt viscosity in a suitable temperature range (for example, 60 to 120°C). In the present invention, the softening point is a value measured by a softening point test (ring and ball method) method (measurement conditions: in accordance with JIS-K7234 1986).

[0040] In the epoxy resin used in the present invention, from the viewpoint of increasing the crosslink density of the thermoset, the epoxy equivalent is preferably 150 to 800 g / eq. In the present invention, the epoxy equivalent refers to the number of grams (g / eq) of a resin containing 1 gram equivalent of epoxy groups. The weight average molecular weight of the epoxy resin is usually preferably less than 10,000, more preferably not more than 5,000. There is no particular lower limit, but a value of 300 or more is practical. The weight average molecular weight is a value determined by GPC (gel permeation chromatography) analysis.

[0041] Examples of the skeleton of the epoxy resin include phenol novolac type, orthocresol novolac type, cresol novolac type, dicyclopentadiene type, biphenyl type, fluorene bisphenol type, triazine type, naphthol type, naphthalene diol type, triphenylmethane type, tetraphenyl type, bisphenol A type, bisphenol F type, bisphenol AD ​​type, bisphenol S type, and trimethylolmethane type. Among these, triphenylmethane type, bisphenol A type, cresol novolac type, or orthocresol novolac type is preferred from the viewpoint of obtaining an adhesive with low resin crystallinity and good appearance. These may be used alone or in combination of two or more. For example, a combination of bisphenol A type and bisphenol F type is preferred.

[0042] The content of the epoxy resin is preferably 25 to 80 parts by mass, more preferably 30 to 80 parts by mass, even more preferably 30 to 70 parts by mass, and even more preferably 30 to 60 parts by mass, based on 100 parts by mass of the total content of the components constituting the adhesive (specifically, the components other than the solvent, i.e., the solid content). By setting the content within the above preferred range, storage stability and transparency can be improved. In addition, by setting the content below the above preferred upper limit, the generation of oligomer components can be suppressed, and changes in the film state (film tackiness, etc.) due to slight temperature changes can be made less likely to occur. The content of the epoxy resin is preferably from 30 to 70 parts by mass, and more preferably from 40 to 65 parts by mass, per 100 parts by mass of the total content of the epoxy resin and the polymer component.

[0043] -Polymer component- The polymer component may be any component that, when the adhesive layer 3 is formed, suppresses the film tackiness (the property that the film state is easily changed even by a slight change in temperature) at room temperature (25°C) and imparts sufficient adhesiveness and film-forming properties (film-forming properties). Examples of the polymer component include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, polyester resin such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resin, fluororesin, polyurethane resin, etc. These polymer components may be used alone or in combination of two or more. As the polymer component, at least one of phenoxy resin and polyurethane resin is preferable.

[0044] The weight average molecular weight of the polymer component is at least 10000. There is no particular upper limit, but a value of 5000000 or less is practical. The weight average molecular weight of the polymer component is a value determined by GPC (gel permeation chromatography) in terms of polystyrene. Hereinafter, the weight average molecular weight of a specific polymer component has the same meaning. The glass transition temperature (Tg) of the polymer component is preferably less than 100° C., more preferably less than 90° C. The lower limit is preferably 0° C. or higher, more preferably 10° C. or higher. The glass transition temperature of the polymer component is a glass transition temperature measured by DSC (differential scanning calorimeter) at a temperature rise rate of 0.1° C. / min. Hereinafter, the glass transition temperature of a specific polymer component has the same meaning. In the present invention, among the epoxy resins and polymer components, resins that may have epoxy groups, such as phenoxy resins, are classified as follows: resins with an epoxy equivalent of 1000 g / eq or less are classified as epoxy resins, and resins with an epoxy equivalent of more than 1000 g / eq are classified as polymer components.

[0045] (Phenoxy resin) Phenoxy resin is preferred as a polymer component because it has a similar structure to epoxy resin and therefore has good compatibility. When phenoxy resin is contained, it can also exhibit excellent adhesive properties. The phenoxy resin can be obtained by a conventional method, for example, by reacting a bisphenol or biphenol compound with an epihalohydrin such as epichlorohydrin, or by reacting a liquid epoxy resin with a bisphenol or biphenol compound.

[0046] The weight average molecular weight of the phenoxy resin is preferably 10,000 or more, and more preferably 10,000 to 100,000. Furthermore, the amount of epoxy groups remaining in the phenoxy resin in small amounts is preferably 5000 g / eq or more in terms of epoxy equivalent.

[0047] The glass transition temperature (Tg) of the phenoxy resin is preferably less than 100° C., more preferably less than 90° C. The lower limit is preferably 0° C. or higher, more preferably 10° C. or higher.

[0048] (Polyurethane resin) The polyurethane resin is a polymer having a urethane (carbamic acid ester) bond in the main chain. The polyurethane resin has a structural unit derived from a polyol and a structural unit derived from a polyisocyanate, and may further have a structural unit derived from a polycarboxylic acid. The polyurethane resin may be used alone or in combination of two or more kinds. The Tg of the polyurethane resin is usually 100° C. or less, preferably 60° C. or less, more preferably 50° C. or less, and also preferably 45° C. or less.

[0049] The weight average molecular weight of the polyurethane resin is not particularly limited, and one within the range of 5,000 to 500,000 is usually used.

[0050] The polyurethane resin can be synthesized by a conventional method, and can also be obtained from the market. Examples of commercially available products that can be used as the polyurethane resin include Dynaleo VA-9320M, Dynaleo VA-9310MF, and Dynaleo VA-9303MF (all manufactured by Toyochem Co., Ltd.).

[0051] The content of the polymer component relative to 100 parts by mass of the epoxy resin is preferably 1 to 250 parts by mass, more preferably 10 to 180 parts by mass, and even more preferably 40 to 150 parts by mass. By setting the content within such a range, the rigidity and flexibility of the adhesive before curing can be adjusted. The film condition becomes good (film tackiness is reduced), and film brittleness can also be suppressed. The content of the polymer component is preferably 30 to 70 parts by mass, and more preferably 40 to 70 parts by mass, per 100 parts by mass of the total content of the epoxy resin and the polymer component.

[0052] - Hardener - Examples of the curing agent include amines, acid anhydrides, and polyhydric phenols. From the viewpoint of storage stability of the adhesive, it is preferable to use a latent curing agent. Examples of the latent curing agent include dicyandiamide compounds, imidazole compounds, curing catalyst composite polyhydric phenol compounds, hydrazide compounds, boron trifluoride-amine complexes, amine imide compounds, polyamine salts, and modified products and microcapsule-type products thereof, which may be used alone or in combination of two or more. Among them, it is preferable to use at least one of dicyandiamide compounds, imidazole compounds, and hydrazide compounds. The latent curing agent may be a thermal cationic polymerization initiator, which contains a sulfonium cation as the cationic component and SbF6 as the anionic component. - or PF6 - More preferred is a thermal cationic polymerization initiator having the formula:

[0053] The content of the curing agent relative to 100 parts by mass of the epoxy resin is preferably 0.5 to 50 parts by mass, more preferably 1 to 40 parts by mass, even more preferably 1 to 30 parts by mass, still more preferably 1 to 10 parts by mass, and even more preferably 1 to 5 parts by mass, from the viewpoints of exhibiting a sufficient curing speed and ensuring transparency after curing.

[0054] -Filling material- The filler may be any filler that can be normally used in the adhesive layer of a tape for semiconductor processing, without any particular limitation. The filler is preferably an inorganic filler. Examples of inorganic fillers include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina (aluminum oxide), beryllium oxide, magnesium oxide, silicon carbide, silicon nitride, aluminum nitride, and boron nitride; metals or alloys such as aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, and solder; and carbons such as carbon nanotubes and graphene. Examples of inorganic fillers include various inorganic powders. The filler is preferably silica.

[0055] -Other ingredients- In addition to the epoxy resin, the curing agent, the polymer component, and the filler, the adhesive may further contain an ion trapping agent (ion capture agent), a curing catalyst, a viscosity modifier, an antioxidant, a flame retardant, a silane coupling agent, a curing accelerator, a colorant, etc., within a range that does not impair the effects of the present invention. For example, it may contain other additives described in International Publication No. 2017 / 158994. The total content of the epoxy resin and polymer component in the adhesive is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, and even more preferably 80% by mass or more.

[0056] The thickness of the adhesive layer 3 is not particularly limited and can be appropriately set depending on the purpose. The thickness of the adhesive layer 3 is, for example, preferably 1 to 200 μm, more preferably 5 to 180 μm, even more preferably 5 to 170 μm, still more preferably 5 to 150 μm, and particularly preferably 5 to 140 μm. The thickness of the adhesive layer 3 can be 10 to 100 μm, 25 to 100 μm, 25 to 80 μm, or 30 to 50 μm. The thickness of the adhesive layer 3 can be measured by a contact linear gauge method (a desktop contact type thickness measuring device).

[0057] <Release film 4> The release film 4 functions as a support and a protective film during production and before use of the semiconductor processing tape 1. When the adhesive layer 3 and the dicing film 2 are attached to an adherend such as a semiconductor wafer, the release film 4 is peeled off, and the adherend is attached to the exposed adhesive layer 3 and dicing film 2.

[0058] Examples of materials for the release film 4 include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate (PEN), and polyolefins such as polyethylene (PE) and polypropylene (PP). The release film 4 is preferably subjected to a release treatment. The release film 4 is preferably made of polyethylene terephthalate that has been subjected to a release treatment.

[0059] The thickness of the release film 4 is not particularly limited and can be appropriately selected depending on the conditions of use of the semiconductor processing tape 1. The thickness of the release film 4 is, for example, 25 to 200 μm. The thickness of the release film 4 is preferably 25 to 150 μm, more preferably 38 to 120 μm, more preferably 38 to 100 μm, and still more preferably 38 to 70 μm.

[0060] The shape of the release film 4 is not particularly limited, and is, for example, rectangular, and preferably a long rectangular shape. The width of the release film 4 is not particularly limited and can be appropriately selected depending on the size of the semiconductor wafer, the conditions of use of the semiconductor processing tape 1, and the like, and may be, for example, 20 to 70 cm. The longitudinal dimension of the release film 4 is not particularly limited. If the semiconductor processing tape 1 of the present invention has one laminate of the dicing film 2 and the adhesive layer 3 on the release film 4, the longitudinal dimension of the release film 4 is, for example, 20 to 70 cm. If the semiconductor processing tape 1 of the present invention has a plurality of laminates of the dicing film 2 and the adhesive layer 3 on the long release film 4, the longitudinal dimension of the release film 4 may be sufficiently longer than the above-mentioned width dimension, and may be, for example, 10 to 120 m, or may be 10 to 50 m.

[0061] In a preferred embodiment of the semiconductor processing tape 1 of the present invention, the peel strength between the pressure-sensitive adhesive layer 22 and the adhesive layer 3 is preferably 0.02 to 5.0 N / 25 mm, more preferably 0.03 to 4.0 N / 25 mm, more preferably 0.03 to 2.0 N / 25 mm, more preferably 0.03 to 1.0 N / 25 mm, more preferably 0.03 to 0.4 N / 25 mm, and even more preferably 0.03 to 0.3 N / 25 mm. The peel force can be measured as follows.

[0062] -Method of measuring peel strength- 1) How to prepare the sample The release film 4 is peeled off from the semiconductor processing tape to expose the adhesive layer 3, and the tape is placed on a workbench with the adhesive side facing up. Place the tape on a workbench and apply it to the exposed adhesive surface by rolling a 2 kg rubber roller back and forth three times. Leave it for one hour after application is complete. After one hour has passed, a cutter is used to cut out a sample measuring 25 mm wide x approximately 100 mm long to prepare a measurement sample. 2)Measurement method The measurement is performed by a T-direction peeling method (compliant with JIS Z0237:2009) using a universal testing machine (Strograph VG1F (product name) manufactured by Toyo Seiki Seisakusho). The maximum load is measured when the pressure-sensitive adhesive layer 22 and the adhesive layer 3 of the measurement sample are peeled off at 23°C and a speed of 300 mm / min. The measurement is carried out three times, and the average value is regarded as the peel force (N / 25 mm).

[0063] <Support Tape 6> The support tape 6 has a function of forming spaces between the laminates when the semiconductor processing tape 1 is rolled, thereby suppressing marks. In the semiconductor processing tape 1 of the present invention, the support tape 6 may be disposed in the longitudinal direction on both widthwise ends of the surface of the release film 4 opposite the adhesive layer 3 . The support tape 6 can be any support tape that is normally used in the semiconductor processing tape 1, and a pressure-sensitive adhesive tape having a resin film substrate coated with a pressure-sensitive adhesive can be preferably used.

[0064] The semiconductor processing tape 1 of the present invention can be produced in the same manner as ordinary semiconductor processing tapes, except that the cutting depth into the release film 4 is controlled. For example, a pressure-sensitive adhesive composition is applied onto a separator that has been subjected to a release treatment, and dried as necessary to form a pressure-sensitive adhesive layer 22. The pressure-sensitive adhesive layer 22 and the substrate 21 are then bonded together to obtain a laminate (also a laminate of a dicing film 2 and a separator) in which the substrate 21, the pressure-sensitive adhesive layer 22, and the separator are laminated in this order. Separately, an adhesive composition is applied onto a release film 4, and dried as necessary to form an adhesive film having an adhesive layer 3 on the release film 4. A separator is bonded to this adhesive film to obtain a laminate in which the release film 4, the adhesive layer 3, and the separator are laminated in this order. Next, the separator is peeled off from these laminates, and the dicing film 2 and the adhesive film are bonded together so that the dicing film 2 with the pressure-sensitive adhesive layer 22 exposed and the adhesive film with the adhesive layer 3 exposed are in contact with each other, and the entire surface of the adhesive layer 3 on the dicing film 2 side is in contact with the pressure-sensitive adhesive layer 22, thereby obtaining a semiconductor processing tape 1 in which the substrate 21, the pressure-sensitive adhesive layer 22, the adhesive layer 3, and the release film 4 are laminated in this order. The above-mentioned lamination of the dicing film 2 and the adhesive film is preferably carried out under pressure. Prior to the above lamination, the adhesive layer 3 is formed to a desired area. When the adhesive layer 3 is precut to a desired area, the conditions of the precut are set so as to obtain the cutting depth as described above. After the precut, the adhesive layer 3 is removed except for the portion that has been given the desired shape (the portion having a shape corresponding to the semiconductor wafer). The equipment and conditions used for the precut can be ordinary equipment and conditions, except for the cutting depth as described above. As described above, the adhesive layer 3 may be formed to a desired area without precutting by applying the adhesive to the release film 4 in a desired shape. When forming the adhesive layer 3 only by application without precutting, it is preferable to use an RS Coater (product name) manufactured by Chugai Ro Co., Ltd. The adhesive layer 3 can also be formed by precutting the desired area on a separator and then transferring it to the release film 4.

[0065] The dicing film 2 is preferably formed to a desired area and shape. The dicing film 2 is preferably precut to a desired area and shape after the above-mentioned lamination. The dicing film 2 may be precut to a desired area and shape before the above-mentioned lamination, and then laminated to the adhesive layer 3. When the dicing film 2 is precut, the conditions for the precut process can be appropriately set.

[0066] The laminate structure and arrangement of the components, the materials of the components, etc. of the semiconductor processing tape 1 of the present invention can be selected from normal forms depending on the purpose, except for matters related to the incision 5 in the release film 4, and for example, International Publication No. 2019 / 230036 and the like can be used as a reference. EXAMPLES

[0067] The present invention will be described more specifically based on examples and comparative examples, but the present invention is not limited to the following embodiments. In the following description, room temperature means 25° C. Additionally, “MEK” is methyl ethyl ketone, and “PET” is polyethylene terephthalate.

[0068] As each of the examples and comparative examples, the semiconductor processing tapes shown in Figs. 1 and 2 (however, in a form without the support tape 6) were prepared.

[0069] <Base material 21a> A film having a thickness of 90 μm was prepared using Himilan AM-7316 (trade name, manufactured by Mitsui DuPont Chemical Co., Ltd.), which is an ethylene-methacrylic acid-(2-methyl-propyl acrylate) terpolymer-Zn++-ionomer resin. One side of this film was subjected to a corona treatment. In this way, a substrate 21a was obtained.

[0070] <Adhesive composition 22a> 100 parts by mass of an acrylic adhesive (manufactured by Shin-Nakamura Chemical Co., Ltd., product name "AP-FE2503"), 3.0 parts by mass of a curing agent (manufactured by Soken Chemical Industry Co., Ltd., product name "L-45E"), and 9 parts by mass of a polyisocyanate compound (manufactured by Asahi Kasei Chemicals Corporation, product name "TKA-100") were stirred and dissolved in ethyl acetate to prepare adhesive composition 22a.

[0071] <Adhesive composition 3a> MEK was added to a composition consisting of 50 parts by mass of epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "1002", bisphenol A type solid epoxy resin), 100 parts by mass of epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "806", bisphenol F type liquid epoxy resin), 5 parts by mass of curing agent (manufactured by Evonik Degussa GmbH, product name "Dyhard (registered trademark) 100SF", dicyandiamide), 150 parts by mass of silica filler (manufactured by Admafine Co., Ltd., product name "SO-C2"), and 5 parts by mass of silica filler (manufactured by Nippon Aerosil Co., Ltd., product name "Aerosil R972"), and the mixture was stirred and mixed to obtain a uniform composition. To this, 100 parts by mass of phenoxy resin (manufactured by Gabriel Phenoxies, trade name "PKHH"), 0.4 parts by mass of silane coupling agent (manufactured by Shin-Etsu Silicone Co., Ltd., trade name "KBM-802", mercaptopropyltrimethoxysilane), and 0.5 parts by mass of curing accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., trade name "Curezol 2PHZ-PW", 2-phenyl-4,5-dihydroxymethylimidazole) were added and mixed by stirring until homogeneous. The mixture was further filtered through a 100 mesh filter and vacuum degassed to obtain a varnish of adhesive composition 3a.

[0072] <Example 1> The adhesive composition 22a was applied to the entire surface of one side of a separator S1 (Toyobo Ester Film E7002 (product name), manufactured by Toyobo Co., Ltd., width: 400 mm) made of a release-treated long polyethylene terephthalate film so that the thickness after drying would be 15 μm, and the adhesive layer was obtained by drying at 110° C. for 3 minutes. The obtained adhesive layer was bonded to the above-mentioned substrate 21a to produce a dicing film with separator S1 having a substrate and an adhesive layer. In addition, the adhesive composition 3a was applied to one side of a release film made of a long polyethylene terephthalate film (Toyobo Ester Film E7004 (trade name), manufactured by Toyobo Co., Ltd., thickness 100 μm, width: 400 mm) in a circular shape with a diameter of 320 mm at 100 locations spaced apart so that the thickness after drying was 30 μm, and dried at 110 ° C. for 5 minutes. In this way, an adhesive film A having 100 circular adhesive layers on a release film was obtained. A separator S2 made of a long polyethylene-terephthalate film that had been release-treated (Toyobo Ester Film E7002 (trade name), manufactured by Toyobo Co., Ltd., width: 400 mm) was attached to the exposed adhesive layer side of this adhesive film A. Next, the separator S1 was peeled off from the dicing film, and the separator S2 was peeled off from the adhesive film A. The exposed adhesive layer and adhesive layer were bonded together to obtain a dicing film-adhesive layer-release film laminate (a laminate of substrate-adhesive layer-adhesive layer-release film). The dicing film of this laminate was then punched out at 100 locations using a cutting blade to form circles with a diameter of 370 mm, with the center of each circle coinciding with the center of the adhesive layer and with a gap of 3.5 mm between the outer periphery of each circle and the periphery. The dicing film in the gaps was peeled off and removed. In this manner, the semiconductor processing tape of Example 1 was produced. In this semiconductor processing tape, the dicing film and the adhesive layer are laminated in a state where the centers of their planar shapes overlap. The peel strength between the pressure sensitive adhesive layer and the adhesive layer of this semiconductor processing tape was 0.03 N / 25 mm.

[0073] <Example 2> A tape for semiconductor processing of Example 2 was produced in the same manner as in Example 1, except that adhesive film B produced as follows was used instead of adhesive film A in Example 1. (Preparation of adhesive film B) The adhesive composition 3a was applied to the entire surface of one side of a release film (Toyobo Ester Film E7004 (trade name), manufactured by Toyobo Co., Ltd., thickness 100 μm, width: 400 mm) made of a release-treated long polyethylene terephthalate film so that the thickness after drying would be 30 μm, and dried at 110 ° C. for 5 minutes to form a laminate of the release film and the adhesive layer. The adhesive layer of the laminate thus obtained was punched out at 100 places into a circular shape with a diameter of 320 mm using a cutting blade. Punching was performed from the adhesive layer side of the laminate, and the cutting depth into the release film was 10 μm. After punching, the part of the adhesive layer other than the circular part was peeled off and removed from the release film. In this way, an adhesive film B having 100 circular adhesive layers on a release film was obtained.

[0074] <Example 3> A tape for semiconductor processing of Example 3 was produced in the same manner as in Example 2, except that the cutting depth into the release film when punching out the adhesive layer was 20 μm.

[0075] <Example 4> A tape for semiconductor processing of Example 4 was produced in the same manner as in Example 2, except that the cutting depth into the release film when punching out the adhesive layer was 25 μm.

[0076] <Comparative Example 1> A tape for semiconductor processing of Comparative Example 1 was produced in the same manner as in Example 2, except that the cutting depth into the release film when punching out the adhesive layer was 30 μm.

[0077] <Comparative Example 2> A tape for semiconductor processing of Comparative Example 2 was produced in the same manner as in Example 2, except that the cutting depth into the release film when punching out the adhesive layer was 35 μm.

[0078] <Comparative Example 3> In Example 2, the release film used in producing the adhesive film was a release film made of a long, release-treated polyethylene terephthalate film having a thickness of 38 μm (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 38 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 30 μm. The semiconductor processing tape of Comparative Example 3 was produced in the same manner as in Example 2, except that the release film used in producing the adhesive film was a release film made of a long, release-treated polyethylene terephthalate film having a thickness of 38 μm (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 38 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 30 μm.

[0079] <Comparative Example 4> In Example 2, the release film used in producing the adhesive film was a release film made of a 50 μm thick, release-treated, long polyethylene terephthalate film (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 50 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 30 μm. The semiconductor processing tape of Comparative Example 4 was produced in the same manner as in Example 2, except that the release film used in producing the adhesive film was a release film made of a 50 μm thick, release-treated long polyethylene terephthalate film (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 50 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 30 μm.

[0080] <Comparative Example 5> In Example 2, the release film used in producing the adhesive film was a release film made of a 50 μm thick, release-treated, long polyethylene terephthalate film (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 50 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 35 μm. The semiconductor processing tape of Comparative Example 5 was produced in the same manner as in Example 2, except that the release film used in producing the adhesive film was a release film made of a 50 μm thick, release-treated long polyethylene terephthalate film (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 50 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 35 μm.

[0081] <Comparative Example 6> In Example 2, the release film used in producing the adhesive film was a release film made of a long, release-treated polyethylene terephthalate film having a thickness of 38 μm (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 38 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 35 μm. The semiconductor processing tape of Comparative Example 6 was produced in the same manner as in Example 2, except that the release film used in producing the adhesive film was a release film made of a long, release-treated polyethylene terephthalate film having a thickness of 38 μm (Toyobo Ester Film E7004 (product name), manufactured by Toyobo Co., Ltd., thickness 38 μm, width: 400 mm), and the cut depth into the release film when punching out the adhesive layer was 35 μm.

[0082] <Rate of label peeling> The semiconductor processing tapes of the Examples and Comparative Examples were laminated to semiconductor wafers, and the occurrence of defects during lamination was observed. A wafer mounter (manufactured by Disco, product name: DFM2700) was used as a tape attachment device for the above bonding. The semiconductor wafer was a semiconductor wafer with a thickness of 100 μm and a diameter of 300 mm. A ring frame, DTF2-12 manufactured by Disco, was used. The semiconductor processing tapes of the examples and comparative examples were set on the wafer mounter, and the exposed laminate of the adhesive layer and the dicing film was attached to the semiconductor wafer and the ring frame while peeling off the release film from the semiconductor processing tapes of the examples and comparative examples, as shown in Figures 3(A) to 3(D). This operation was carried out 100 times for each semiconductor processing tape of each example and comparative example (100 semiconductor wafers were attached to each semiconductor processing tape). The state of attachment between each semiconductor wafer and the laminate of the adhesive layer and the dicing film was visually observed, and when peeling off the release film from the adhesive layer (Figure 3(B)), the adhesive layer followed the release film and the adhesive layer peeled off from the pressure-sensitive adhesive layer, or the adhesive layer wrinkled, or other defects were observed. This was regarded as "label peeling", and the label peeling occurrence rate (number of semiconductor wafers with peeled labels / 100 pieces x 100 (%)) was calculated.

[0083] [Table 1]

[0084] The semiconductor processing tapes of Comparative Examples 1 to 6 all have a release film with a cut depth of 30 μm or more due to precut processing of the adhesive layer. The semiconductor processing tapes of Comparative Examples 1 to 6 all had a label peeling rate of 14% or more when attached to a semiconductor wafer, and were prone to poor attachment. This tendency did not change even with the semiconductor processing tapes of Comparative Examples 3 to 6, which have a thin release film that is easy to peel off and less likely to cause label peeling. In contrast, the semiconductor processing tape of Example 1 has a release film that does not have a cut because the adhesive layer is formed by coating. The semiconductor processing tapes of Examples 2 to 4 have a release film in which the depth of the cut caused by the precut processing of the adhesive layer is controlled to 25 μm or less. The semiconductor processing tapes of Examples 1 to 4 all had a label peeling rate of 12% or less when attached to a semiconductor wafer, and adhesion failures were suppressed. It is believed that one of the reasons for the suppression of adhesion failures is that the adhesive layer is prevented from being bitten into the release film by making the cut depth shallow. It can be seen that by using the semiconductor processing tape of the present invention, adhesion failures can be suppressed and adhesion to a semiconductor wafer can be efficiently performed. [Explanation of symbols]

[0085] 1. Semiconductor processing tape 2 Dicing film 21 Base material 22 Adhesive layer 3 Adhesive layer 4 Release film 5 Cutting 6 Support Tape R-ring frame W Semiconductor wafer 100 stages t Tongue-out jig r Laminating roll

Claims

1. A semiconductor processing tape comprising a laminate having a dicing film comprising a substrate and a pressure-sensitive adhesive layer in contact with the substrate, an adhesive layer in contact with the pressure-sensitive adhesive layer, and a release film in contact with the adhesive layer, an area of ​​the dicing film is larger than an area of ​​the adhesive layer, and the entire surface of the adhesive layer on the dicing film side is in contact with the dicing film; and an area of ​​the release film is larger than an area of ​​the adhesive layer, and the entire surface of the adhesive layer on the release film side is in contact with the release film; A semiconductor processing tape, wherein the release film does not have a cut along the periphery of the adhesive layer associated with precutting of the adhesive layer, or if the release film has such a cut, the depth of the cut is 25 μm or less.

2. 2. The tape for semiconductor processing according to claim 1, wherein the adhesive layer has a thickness of 1 to 200 μm.

3. 3. The semiconductor processing tape according to claim 1, wherein the depth of the cut is 5 [mu]m or less.

4. 3. The semiconductor processing tape according to claim 1, wherein the release film does not have a cut along the periphery of the adhesive layer associated with precutting of the adhesive layer.

5. 3. The semiconductor processing tape according to claim 1, wherein the adhesive layer contains an epoxy resin and a phenoxy resin.

Images