Substrate processing apparatus, substrate processing method, and storage medium

Abstract

To suppress deterioration in uniformity of the film thickness within a substrate caused by variations in temperature of the substrate after the temperature adjustment by a temperature adjustment portion.SOLUTION: A substrate processing apparatus includes: a temperature adjustment unit that adjusts the temperature of a substrate; a temperature acquisition unit that acquires the temperature of the substrate temperature-adjusted by the temperature adjustment unit; a coating processing unit that performs a processing process including a coating process that forms a coating film on the substrate temperature-adjusted by the temperature adjustment unit; and a control unit. The control unit corrects the processing process in the coating processing unit in accordance with the temperature of the substrate acquired by the temperature acquisition unit.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium. [Background technology]

[0002] Patent Document 1 discloses a coating apparatus that performs spin coating, adjusting the thickness profile of a coating film by the rotation speed of the substrate when a coating liquid is applied. This coating apparatus includes a temperature measuring means that measures the temperature of a substrate held by a substrate holder, and a calculation unit. The calculation unit calculates the rotation speed for adjusting the thickness profile of a coating film for a subsequent substrate based on a temperature measurement value measured by the temperature measuring means before a coating process for one substrate, a temperature measurement value measured by the temperature measuring means before a coating process for a subsequent substrate to be coated after the first substrate, a rotation speed for adjusting the thickness profile of a coating film in the coating process performed on the first substrate, and a predetermined constant. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-40921 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein suppresses deterioration of film thickness uniformity within the substrate surface, which is caused by variations in the substrate temperature after temperature adjustment by a temperature adjustment unit. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus comprising a temperature adjustment unit that adjusts a temperature of a substrate, a temperature acquisition unit that acquires the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit, a coating processing unit that performs a processing process including a coating process that forms a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit, and a control unit, wherein the control unit corrects the processing process in the coating processing unit in accordance with the temperature of the substrate acquired by the temperature acquisition unit. Effect of the Invention

[0006] According to the present disclosure, it is possible to suppress deterioration in uniformity of film thickness within the substrate surface, which is caused by variations in the temperature of the substrate after temperature adjustment by a temperature adjustment unit. [Brief description of the drawings]

[0007] [Figure 1] 1 is a plan view showing a schematic outline of a configuration of a wafer processing system as a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 1 is a front view showing a schematic outline of a configuration of a wafer processing system as a substrate processing apparatus according to an embodiment of the present invention; [Diagram 3] FIG. [Figure 4] FIG. [Diagram 5] FIG. [Figure 6] 1 is a vertical cross-sectional view showing an outline of an example of the configuration of a resist film forming apparatus. [Figure 7] 1 is a cross-sectional view showing an outline of an example of the configuration of a resist film forming apparatus. [Figure 8] 11 is a flowchart for explaining the operation of the wafer processing system during a series of steps for forming a resist film. [Figure 9] 10A and 10B are diagrams for explaining an example of a method for determining the in-plane uniformity of the wafer temperature. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] 2. Description of the Related Art In a manufacturing process for semiconductor devices and the like, a coating process is performed in which a coating film such as a resist film is formed by applying a coating liquid to a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"). In addition to the coating module that performs the coating process as described above, a semiconductor manufacturing apparatus may also be provided with a temperature adjustment module that adjusts the temperature of the substrate. In this case, the temperature of the substrate is adjusted by the temperature adjustment module before the coating process by the coating module.

[0009] However, the temperature of the substrate after adjustment by the temperature adjustment module, i.e., the temperature of the substrate during the coating process, may vary within the substrate surface. Since the temperature of the substrate during the coating process affects the thickness of the coating film, if the temperature varies within the substrate surface during the coating process as described above, the uniformity of the thickness of the coating film within the substrate surface will deteriorate.

[0010] Therefore, the technology disclosed herein suppresses deterioration of the uniformity of the film thickness within the substrate surface, which is caused by variations in the temperature of the substrate after the temperature adjustment by the temperature adjustment unit.

[0011] Hereinafter, a wafer processing system as a substrate processing apparatus and a substrate processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0012] <Wafer processing system> First, the configuration of the wafer processing system according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that show a schematic outline of the configuration of the wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a developing process on a wafer W.

[0013] 1, the wafer processing system 1 has a cassette station 2 where a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2 and an interface station 4 that transfers the wafers W between the processing station 3 and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0014] The cassette station 2 is provided with a cassette mounting table 21, a wafer transport device 22, and a wafer transport device 23. A plurality of cassette mounting plates 24 are arranged in the X direction on the cassette mounting table 21. The cassette station 2 transports wafers between the cassette C mounted on the cassette mounting table 21 and the processing station 3 by the wafer transport device 22 or the wafer transport device 23. To this end, the wafer transport device 22 and the wafer transport device 23 are each provided with a drive mechanism for moving in each direction, such as the horizontal direction (X direction and Y direction), the up-down direction (Z direction), and around the vertical axis (θ direction), as necessary, and may be provided with a drive mechanism for moving in all directions. At least one of the wafer transport device 22 and the wafer transport device 23 is capable of transferring the wafer W between the cassette C and the processing station 3. The transfer operation of the wafer W to and from the processing station 3 means, for example, transferring the wafer W between the processing station 3 and a third block G3 including a transfer device accessible to the wafer transport device 33 in the processing station 3 described below. The third block G3 may include a plurality of transfer devices (not shown) arranged vertically.

[0015] An inspection device (not shown) that inspects the wafer W may be provided at a position accessible to either the wafer transfer device 22 or the wafer transfer device .

[0016] The processing station 3 is provided with a plurality of blocks, for example, three blocks G1, G2, and G4, i.e., the first, second, and fourth blocks. Also, as shown in FIG. 2, a plurality of layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side (negative side in the X direction in FIG. 1) of the processing station 3, and the second block G2 is provided on the rear side (positive side in the X direction in FIG. 1) of the processing station 3. The fourth block G4 is provided on the interface station 4 side (positive side in the Y direction in FIG. 1) of the processing station 3 or at a connection portion with another adjacent processing station 3. The fourth block G4 may be provided with a plurality of transfer devices arranged vertically. Also, the above-mentioned third block G3 may be provided within the processing station 3.

[0017] In the first block G1, a plurality of processing devices, such as a patterning film forming device and a development processing device (both not shown), are arranged. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device.

[0018] For example, the processing devices are arranged in the horizontal direction in the first block G1. The number, arrangement, and types of the processing devices in the first block G1 can be selected arbitrarily.

[0019] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, in the patterning film forming apparatuses, a resist film used as a mask when forming a pattern of a lower layer film, and an anti-reflection film for efficiently performing a light irradiation process, for example an exposure process, are formed. Meanwhile, in the developing treatment apparatuses, a part of the exposed resist film is removed to form an uneven shape as the mask.

[0020] For example, in the second block G2, heat treatment devices (not shown) that perform heat treatment such as heating and cooling of the wafer W are arranged vertically and horizontally. In the second block G2, a hydrophobization treatment device that performs a hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and a peripheral exposure device that exposes the peripheral portion of the wafer W are arranged vertically (Z direction) and horizontally, although neither are shown. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected arbitrarily.

[0021] 1, a wafer transfer area 32 is formed in an area sandwiched between a first block G1 and a second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0022] The wafer transport device 33 has a transport arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the Z direction. The wafer transport device 33 moves within the wafer transport area 32 and can transport the wafer W to a predetermined device within the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in Fig. 1, the wafer transport device 33 provided in the processing station 3 located on the interface station 4 side can transport the wafer W to a predetermined device within the fifth block G5 described below in addition to the first, second, and fourth blocks G1, G2, and G4.

[0023] A plurality of wafer transport devices 33 are arranged, for example, one above the other. One wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the upper layers 31 among the layers 31 stacked vertically. Another wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the layers 31 located below the layers 31. A plurality of wafer transport areas 32 are provided to enable such transport of wafers W. The number of wafer transport devices 33 and the number of layers 31 corresponding to one wafer transport device 33 can be selected arbitrarily, such as providing a wafer transport device 33 for each layer 31.

[0024] Furthermore, the wafer transfer area 32, the first block G1, or the second block G2 may include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0025] The interface station 4 includes a fifth block G5 having a plurality of transfer devices, and a wafer transfer device 41 and a wafer transfer device 42. The interface station 4 transfers the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device using the wafer transfer device 41 or the wafer transfer device 42. For this purpose, the wafer transfer device 41 and the wafer transfer device 42 are each provided with a drive mechanism for moving in each direction, such as the X direction, the Y direction, the Z direction, and around the vertical axis (θ direction), as necessary, and may be provided with a drive mechanism for moving in all directions. At least one of the wafer transfer device 41 and the wafer transfer device 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0026] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either the wafer transfer device 41 or the wafer transfer device .

[0027] The inspection device may be provided in the cassette station 2 as described above, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible to any of the wafer transport devices 33, 41, 42 provided inside each of them.

[0028] The above-described wafer processing system 1 is provided with a control device 100. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of the drive systems of the above-described various processing devices and transport devices, and for realizing the wafer processing in the wafer processing system 1. The above-described program may be recorded in a computer-readable storage medium H and installed from the storage medium H to the control device 100. The above-described storage medium H may be temporary or non-temporary.

[0029] <Wafer Processing System Operation> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0030] First, a cassette C storing a plurality of wafers W is carried into the cassette station 2 of the wafer processing system 1, and placed on the cassette mounting plate 24. Next, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 22 or the wafer transfer device 23, and is transferred to a delivery device in the third block G3.

[0031] The wafer W transferred to the transfer device of the third block G3 is supported by the wafer transfer device 33 and transferred to the hydrophobization treatment device provided in the second block G2, where the hydrophobization treatment is performed. Next, the wafer W is transferred by the wafer transfer device 33 to the resist film forming device, where a resist film is formed on the wafer W, and then transferred to the heat treatment device, where the wafer W is pre-baked, and then transferred to the transfer device of the fifth block G5. In addition, when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is once placed in the transfer device of the fourth block G4 before being transferred to the transfer device of the fifth block G5, and then transferred between the multiple wafer transfer devices 33. In addition, the wafer W may be transferred to the peripheral exposure device by the wafer transfer device 33 as necessary, where the peripheral portion of the wafer is exposed.

[0032] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by the wafer transfer device 41 and the wafer transfer device 42, and is exposed to a predetermined pattern. The wafer W may be cleaned in a cleaning device before the exposure process.

[0033] The exposed wafer W is transferred to a transfer device in the fifth block G5 by the wafer transfer device 41 and the wafer transfer device 42. Thereafter, the wafer W is transferred to a heat treatment device by the wafer transfer device 33 and subjected to post-exposure baking processing.

[0034] The wafer W that has been subjected to the post-exposure baking process is transferred by the wafer transfer device 33 to a developing treatment device, where it is developed. After the development is completed, the wafer W is transferred by the wafer transfer device 33 to a heat treatment device 40, where it is subjected to a post-baking process.

[0035] Thereafter, the wafer W is transferred by the wafer transfer device 33 to a delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to a cassette C on a predetermined cassette mounting plate 24. In this manner, a series of photolithography steps is completed.

[0036] It should be noted that the wafer processing system in the present disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer processing system is directly connected to the exposure apparatus and transfers the wafer W between the interface station 4 and the exposure apparatus, but the wafer processing system does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it is subjected to necessary processing, and then transferred back to the cassette station 2 to be taken out of the system. Moreover, among the processing devices listed above, any device that is not required may not be provided in the wafer processing system, or processing may not be performed in that device.

[0037] <Transport arm> Next, a configuration of a transfer arm of a wafer transfer device that transfers a wafer W to a temperature adjustment device described later will be described. Fig. 3 is a top view of the transfer arm. Here, it is assumed that a wafer transfer device 33 transfers a wafer W to the temperature adjustment device.

[0038] As shown in FIG. 3, a transfer arm 110 of the wafer transfer device 33 has a fork 111 at its tip. The fork 111 is formed in a substantial C-shape with a diameter slightly larger than the wafer W. On the inner side of the fork 111 in a plan view, a plurality of claws 111a are provided which protrude inward and support the outer periphery of the wafer W. Each of the claws 111a may be provided with a suction hole (not shown) for suction-holding the wafer W.

[0039] The wafer transfer device 33 having the transfer arm 110 as described above is controlled by a control device 100 as a control unit according to the present disclosure.

[0040] <Temperature adjustment device> 1 and 2, in addition to the heat treatment device, the wafer processing system 1 includes a temperature adjustment device that adjusts the temperature of the wafer W. Fig. 4 is a side view of the temperature adjustment device, and Fig. 5 is a top view of a cooling plate described later. The temperature adjustment device 120 in FIG. 4 is provided, for example, in the third block G3 of the wafer processing system 1, and more specifically, is provided in the third block G3 so as to be stacked vertically on the delivery device.

[0041] The temperature adjustment device 120 includes a cooling plate 121, a support column 122, and a temperature sensor 123 as a temperature measurement section.

[0042] The cooling plate 121 is a temperature adjusting unit that adjusts the temperature of the wafer W, and specifically, supports the wafer W on its upper surface side to cool the wafer W. The cooling plates 121 are, for example, stacked in a plurality of stages in the vertical direction. Each cooling plate 121 has a flow path (not shown) formed therein through which, for example, a cooling refrigerant flows.

[0043] The support pillars 122 support the cooling plates 121. Specifically, the support pillars 122 support a plurality of (four in the illustrated example) cooling plates 121 so as to be stacked in a vertical direction in a plurality of stages. In addition, the transfer arm 110 moves up and down relative to the cooling plates 121 to transfer the wafer W between the cooling plates 121 and the forks 111, and the support pillars 122 are provided so as not to interfere with the moving transfer arm 110. A coolant may be supplied to the flow path of the cooling plate 121 through the support pillars 122. That is, the support pillars 122 may be provided with separate flow paths (not shown) communicating with the flow paths of the cooling plates 121.

[0044] The temperature sensor 123 is a temperature measurement unit that is an example of a temperature acquisition unit that acquires the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121, and measures the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121. The temperature sensor 123 is a non-contact temperature measuring device such as a radiation thermometer or a thermography camera, and measures the temperatures at multiple points on the front surface of the wafer W. Moreover, the temperature sensor 123 is provided above the cooling plate 121 so as to be able to measure the temperature of the entire front surface of the wafer W supported by the cooling plate 121. Specifically, the temperature sensor 123 is provided above the uppermost cooling plate 121 so as to be able to measure the temperature of the entire front surface of the wafer W supported by the uppermost cooling plate 121. The measurement result by the temperature sensor 123 is output to the control device 100 .

[0045] As shown in FIG. 5, each cooling plate 121 is formed in a disk shape corresponding to the shape of the wafer W. In addition, each cooling plate 121 is provided with a plurality of notches 121a. The notches 121a are formed so that a part of the transport arm 110 passes through the notches 121a. Specifically, the notches 121a are formed so that the claws 111a of the fork 111 pass through the notches 121a when the transport arm 110 moves up and down relative to the cooling plate 121. That is, the notches 121a are formed so that the claws 111a of the fork 111 do not interfere with the cooling plate 121 when the transport arm 110 moves up and down as described above. For example, each notch 121a is formed so as to be recessed inward from the outer circumferential edge at a position corresponding to the claws 111a of the cooling plate 121.

[0046] When the wafer W is cooled by the cooling plate 121 having such a notch 121a, when the thermal conductivity of the wafer W is low or the cooling time is short, the cooling of the portion of the wafer W corresponding to the notch 121 may be insufficient and the portion may become hotter than other portions. That is, the temperature of the wafer W after temperature adjustment (specifically, after cooling) by the cooling plate 121 may become non-uniform within the surface.

[0047] After the temperature of the wafer W is adjusted (specifically, cooled) by the cooling plate 121, the wafer W is subjected to a processing process, which will be described later, by a resist film forming device, for example, in the wafer processing by the wafer processing system 1.

[0048] <Resist film forming equipment> Next, the configuration of a resist film forming apparatus will be described with reference to Figures 6 and 7. Figures 6 and 7 are a vertical cross-sectional view and a horizontal cross-sectional view, respectively, showing an outline of an example of the configuration of a resist film forming apparatus.

[0049] 6 and 7 performs a process including a resist film formation process for forming a resist film as a coating film on a wafer W. Specifically, the resist film formation apparatus 200 performs the above process after cooling the wafer W by the cooling plate 121, i.e., after adjusting the temperature. The resist film formation process included in the above process is an example of a coating process.

[0050] The resist film forming apparatus 200 has a process container 220 whose interior can be sealed. A loading / unloading port (not shown) for the wafer W is formed on a side surface of the process container 220, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

[0051] A spin chuck 221 is provided in the processing vessel 220 as a substrate holding part that holds the wafer W. Specifically, the spin chuck 221 is a rotary holding part that holds and rotates the wafer W, and more specifically, holds the wafer W and rotates it around a vertical axis P.

[0052] The spin chuck 221 has a horizontal upper surface, and the upper surface is provided with, for example, a suction port (not shown) for sucking the wafer W. The wafer W can be attracted and held on the spin chuck 221 by suction from the suction port.

[0053] The spin chuck 221 is connected to a chuck driving mechanism 222. The chuck driving mechanism 222 has a rotation driving source (not shown) such as a motor that generates a driving force for rotating the spin chuck 221 around the vertical axis P. The rotation of the spin chuck 221 by the chuck driving mechanism 222 causes the wafer W to rotate around the vertical axis P.

[0054] Furthermore, the chuck driving mechanism 222 is provided with a driving source such as a cylinder that generates a driving force for lifting and lowering the spin chuck 221. The spin chuck 221 is lifted and lowered by the chuck driving mechanism 222, whereby the wafer W is lifted and lowered. The chuck drive mechanism 222 is controlled by the control device 100 .

[0055] Lift pins 223 for supporting the wafer W from below and lifting and lowering the wafer W are provided so as to surround the lower side of the spin chuck 221. The lift pins 223 are connected to a pin drive mechanism 224. The pin drive mechanism 224 has a drive source (not shown) such as a motor that generates a drive force for lifting and lowering the lift pins 223. The pin drive mechanism 224 allows the lift pins 223 to protrude to a position higher than the upper surface of the spin chuck 221, so that the wafer W can be transferred to and from the spin chuck 221. The pin drive mechanism 224 is controlled by the controller 100 .

[0056] Further, a cup 230 is provided so as to surround the periphery of the wafer W held by the spin chuck 221. The cup 230 receives and collects liquid that splashes or drops from the wafer W.

[0057] The cup 230 has an outer cup 231 and an inner cup 232. The outer cup 231 surrounds the outer periphery side of the spin chuck 221. The inner cup 232 is provided at a position on the inner periphery side of the outer cup 231 and below the wafer W held by the spin chuck 221.

[0058] The cup 230 is open at the top, specifically, the top of the outer cup 231 is open, and the wafer W can be transferred to the spin chuck 221 through the opening. A gap 233 that forms a discharge path is formed between the inner peripheral surface of the outer cup 231 and the outer peripheral surface of the inner cup 232. The bottom of the cup 230 is provided with an exhaust port 234 for exhausting the inside of the cup 230 and a drain port 235 for discharging the treatment liquid collected in the cup 230 .

[0059] One end of an exhaust pipe 236 is connected to the exhaust port 234, and the other end of the exhaust pipe 236 is connected to an exhaust system (not shown). An exhaust amount adjuster 237 that adjusts the amount of exhaust from the cup 230 may be provided in the exhaust pipe 236. The exhaust amount adjuster 237 has a damper 237a, and can adjust the amount of exhaust from the cup 230 by the opening degree of the damper 237a. The opening degree of the damper 237a is controlled by the control device 100.

[0060] As shown in Fig. 7, a rail 250 extending along the Y direction (left and right direction in Fig. 7) is formed on the negative X direction side (downward in Fig. 7) of cup 230. Rail 250 is formed, for example, from the outside of cup 230 on the negative Y direction side (left direction in Fig. 7) to the outside of cup 230 on the positive Y direction side (right direction in Fig. 7). Rail 250 is provided with one arm 251.

[0061] The arm 251 supports a coating nozzle 261 as a discharge portion.

[0062] The coating nozzle 261 supplies a resist liquid to the front surface of the wafer W held by the spin chuck 221.

[0063] The arm 251 is freely movable on the rail 250 by the moving mechanism 271. The moving mechanism 271 has a driving source (not shown) such as a motor that generates a driving force for moving the arm 251 along the rail 250. When the moving mechanism 271 moves the arm 251 on the rail 250, the application nozzle 261 can move from a waiting section 272 installed outside the cup 230 on the negative Y-direction side to above the wafer W in the cup 230. The moving mechanism 271 is also provided with a driving source (not shown) that generates a driving force for raising and lowering the arm 251. When the moving mechanism 271 raises and lowers the arm 251, the application nozzle 261 rises and lowers. The moving mechanism 271 is controlled by the control device 100 .

[0064] A supply source (not shown) of the resist liquid is connected to the coating nozzle 261. A supply pipe (not shown) connecting the coating nozzle 261 and the supply source is provided with a supply device group (not shown) for controlling the supply of the resist liquid from the supply source to the coating nozzle 261. The supply device group includes, for example, a supply valve that switches between supply and stop of the resist liquid and a flow rate adjustment valve that adjusts the flow rate of the resist liquid. The above-mentioned supply devices are controlled by a control device 100.

[0065] Furthermore, a solvent nozzle 281 is provided within the cup 230 at a position below the wafer W supported by the spin chuck 221 .

[0066] The solvent nozzle 281 supplies a solvent as a "liquid" according to the present disclosure to the back surface (specifically, the peripheral portion of the back surface) of the wafer W held by the spin chuck 221. The solvent is, for example, a glycol-based solvent, and more specifically, a mixed solution of PGME (propylene glycol monomethyl ether) and PGMEA (propylene glycol monomethyl ether acetate).

[0067] A solvent supply source (not shown) is connected to the solvent nozzle 281. A supply pipe (not shown) connecting the solvent nozzle 281 and the supply source is provided with a supply device group (not shown) for controlling the supply of the solvent from the supply source to the solvent nozzle 281. The supply device group includes, for example, a supply valve that switches between supply and stop of the solvent and a flow rate adjustment valve that adjusts the flow rate of the solvent. The above-mentioned supply devices are controlled by a control device 100.

[0068] Solvent nozzle 281 may be configured to be adjustable in the position at which the solvent is discharged from solvent nozzle 281 to the back surface of wafer W held by spin chuck 221. That is, solvent nozzle 281 may be configured to be movable. Specifically, solvent nozzle 281 may be configured to be movable in the radial direction of spin chuck 221, i.e., in the radial direction of wafer W held by spin chuck 221. In this case, the solvent nozzle 281 is connected to a moving mechanism (not shown) having a driving source (not shown) such as a motor that generates a driving force for moving the solvent nozzle 281. The moving mechanism 271 is controlled by the control device 100.

[0069] The resist film forming apparatus 200 configured as described above is connected to a control device 100, which, for example, controls the moving mechanism 271, the aforementioned supply equipment group related to the supply of resist liquid, etc., to form a resist film that covers the entire front surface of the wafer W.

[0070] <Resist film formation process> Next, a series of steps for forming a resist film, which are included in the wafer processing performed using the wafer processing system 1, will be described in more detail with reference to FIGS. Fig. 8 is a flow chart for explaining the operation of the wafer processing system 1 in a series of steps for forming a resist film. Fig. 9 is a diagram for explaining an example of a method for determining the in-plane uniformity of the wafer temperature.

[0071] (Step S1: Adjusting the temperature of the wafer W) When forming a resist film, for example, first, the temperature of the wafer W is adjusted by the cooling plate 121 under the control of the control device 100 as shown in FIG. Specifically, first, the wafer W is placed on the cooling plate 121. More specifically, the fork 111 of the transfer arm 110 holding the wafer W is inserted into the temperature adjustment device 120 and moved to above the uppermost cooling plate 121. Next, the fork 111 is lowered, and the wafer W is transferred from the fork 111 to the uppermost cooling plate 121, and then the fork 111 is retracted from inside the temperature adjustment device 120. Then, the wafer W is cooled by the cooling plate 121 until a predetermined time has elapsed since the wafer W was transferred to the uppermost cooling plate 121. After a predetermined time has elapsed, the wafer W is returned to the transfer arm 110 by, for example, raising and lowering the transfer arm 110, and transfer to the resist film forming apparatus 200 begins.

[0072] (Step S2: Obtaining the temperature of the wafer W) Next, the temperature of the wafer W, the temperature of which has been adjusted by the cooling plate 121, is acquired. Specifically, the temperature of the entire front surface of the wafer W, the temperature of which has been adjusted by the cooling plate 121, is measured by the temperature sensor 123. More specifically, the temperature of the entire front surface of the wafer W, cooled by the uppermost cooling plate 121, is measured by the temperature sensor 123, that is, the in-plane distribution of the temperature of the front surface of the wafer W, cooled by the uppermost cooling plate 121, is acquired by the temperature sensor 123. The measurement result by the temperature sensor 123, that is, the acquired result, is output to the control device 100. The timing for measuring the temperature by the temperature sensor 123 may be the time when the temperature adjustment of the wafer W by the cooling plate 121 is completed, or may be several seconds before the completion time.

[0073] Next, the control device 100 corrects the processing process in the resist film forming device 200 according to the result obtained in step S2. Specifically, the control device 100 performs the correction as follows, for example. That is, for example, first, the control device 100 determines whether the temperature of the wafer W temperature-adjusted by the cooling plate 121 is uniform within the surface based on the result obtained in step S2 (step S3). Then, if the temperature of the wafer W temperature-adjusted by the cooling plate 121 is not uniform within the surface (NO in step S3), the control device 100 corrects the processing process in the resist film forming device 200 (step S4).

[0074] (Step S3: Determining the in-plane uniformity of the wafer temperature) An example of the determination method in step S3 will be described below.

[0075] Here, the divided regions R are regions obtained by dividing the front surface of the wafer W into a plurality of regions as shown in FIG. 9. Specifically, the divided regions R are regions obtained by dividing the front surface of the wafer W into a plurality of regions according to the positions of the notches of the cooling plate 121 supporting the wafer W, and more specifically, regions obtained by dividing the outer periphery of the front surface of the wafer W into a plurality of regions according to the positions of the notches 121a of the cooling plate 121 supporting the wafer W. Therefore, the divided regions R include notch-corresponding regions R1, R3, R5, and R7 that correspond to the notches 121a, and non-notch-corresponding regions R2, R4, R6, and R8 that do not correspond to the notches 121a. The notch-corresponding regions R1, R3, R5, and R7 are, in other words, regions that may overlap the notches 121a. The above-mentioned regions R1 to R8 are arranged in this order clockwise. Furthermore, the areas of the notch-corresponding regions R1, R3, R5, and R7 and the non-notch-corresponding regions R2, R4, R6, and R8 may be the same as or different from each other.

[0076] Then, based on the temperature of the wafer W adjusted by the cooling plate 121 for each divided region R, the control device 100 determines whether the temperature of the wafer W adjusted by the cooling plate 121 is uniform within the surface. Specifically, the control device 100 determines whether the temperature of the wafer W, whose temperature has been adjusted by the cooling plate 121, is uniform within the surface based on the comparison result between the temperatures of the notch corresponding areas R1, R3, R5, and R7 of the wafer W, whose temperature has been adjusted by the cooling plate 121, and the temperatures of the non-notch corresponding areas R2, R4, R6, and R8 of the same wafer W. For example, when the cooling of the portion near the notch 121a of the wafer W whose temperature has been adjusted by the cooling plate 121 is insufficient, that is, when the notch-corresponding regions R1, R3, R5, and R7 are higher than the non-notch-corresponding regions R2, R4, R6, and R8, the control device 100 determines that the temperature is not uniform within the surface, that is, the temperature is non-uniform within the surface. More specifically, when the temperatures of the notch-corresponding regions R1, R3, R5, and R7 of the wafer W whose temperature has been adjusted by the cooling plate 121 are higher than the temperatures of the non-notch-corresponding regions R2, R4, R6, and R8 of the wafer W by a degree exceeding a threshold value, the control device 100 determines that the temperature is not uniform within the surface, that is, the temperature is non-uniform within the surface. That is, when the difference in temperature of the wafer W adjusted by the cooling plate 121 between the notch corresponding regions R1, R3, R5, R7 and the non-notch corresponding regions R2, R4, R6, R8 exceeds a threshold value, the control device 100 determines that the temperature is not uniform in the plane, that is, the temperature is non-uniform in the plane. More specifically, for example, if there is at least one combination of adjacent notch corresponding regions and non-notch corresponding regions in which the temperature difference of the wafer W adjusted by the cooling plate 121 exceeds a threshold value, the control device 100 determines that the temperature is non-uniform in the plane. Alternatively or in addition to this, the control device 100 may determine that the temperature is non-uniform in the plane when the difference between the average value of the temperature of the wafer W adjusted by the cooling plate 121 in the notch corresponding regions R1, R3, R5, R7 and the average value of the non-notch corresponding regions R2, R4, R6, R8 exceeds a threshold value. The threshold value is determined in advance and stored in a storage unit (not shown).

[0077] (Step S4: Treatment process correction) In step S4, specifically, the control device 100 adds the following pre-temperature adjustment process to the processing process in the resist film forming apparatus 200. The pre-temperature adjustment process is a process in which a solvent is discharged from the solvent nozzle 281 onto the rear surface of the wafer W to further adjust the temperature of the wafer W before the resist film forming process as a coating process. In the pre-temperature adjustment process, the wafer W is cooled by the heat of vaporization generated when the solvent discharged from the solvent nozzle 281 and attached to the rear surface of the wafer W volatilizes. Also, in the pre-temperature adjustment process, specifically, the solvent is supplied from the solvent nozzle 281 to the rear surface of the peripheral portion of the wafer W.

[0078] (Step S5: Execute post-correction processing) Thereafter, under the control of the control device 100, the resist film forming device 200 performs the corrected processing on the wafer W. This step S5 includes, for example, the following steps S5a, S5b, S5c, and S5d.

[0079] In step S5, first, the wafer W is placed on the spin chuck 221 (step S5a).

[0080] Specifically, the wafer W whose temperature has been adjusted by the cooling plate 121 is carried into the processing vessel 220 by the transport arm 110 of the wafer transport device 33. Thereafter, the wafer W is delivered to the spin chuck 221 in the cup 230 by, for example, raising and lowering the lift pins 223, and is held by suction.

[0081] Next, a pre-temperature adjustment process is performed on the wafer W (step S5b). This step S5b includes the following steps S5b1 and S5b2. In step S5b1, a solvent is supplied from the solvent nozzle 281 to the outer periphery of the rear surface of the wafer W. Specifically, the spin chuck 221 is rotated, which rotates the wafer W, and during this rotation, the solvent from the solvent nozzle 281 is discharged, for example, continuously toward the wafer W. The discharged solvent that reaches the rear surface of the wafer W is diffused toward the outer circumferential edge of the wafer W by the rotation of the wafer W, and then discharged to the outside. The solvent may be intermittently discharged from the solvent nozzle 281 in accordance with the rotation of the wafer W. In this case, the solvent is supplied only to the back surface of the notch corresponding region and the non-notch corresponding region.

[0082] Next, the solvent is dried, that is, the solvent is evaporated (step S5b2). Specifically, the discharge of the solvent from the solvent nozzle 281 is stopped, and the rotation of the spin chuck 221, i.e., the rotation of the wafer W, is continued. As a result, the solvent supplied to the outer periphery of the rear surface of the wafer W is evaporated, and the heat of evaporation at that time cools at least the notch corresponding region of the outer periphery of the wafer W. When the temperature of the wafer W adjusted by the cooling plate 121 is non-uniform within the surface, i.e., when the temperature of the notch corresponding region is high, the outer periphery of the wafer W is cooled as described above, thereby making it possible to reduce the non-uniformity of the temperature of the wafer W within the surface before the subsequent resist film formation process. In order to increase the amount of solvent vaporized per unit time, it is preferable that the exhaust pressure from the cup 230 in this process is high. On the other hand, it is preferable that the exhaust pressure is low in the process of drying the liquid film of the resist liquid in step S5c2 described later. Therefore, the exhaust pressure from the cup 230 in this process is set higher than that in step S5c2 described later.

[0083] After the preliminary temperature adjustment process, a resist film forming process is performed on the wafer W (step S5c). This step S5c includes the following steps S5c1 and S5c2.

[0084] In step S5c1, the front surface of the wafer W is coated with a resist liquid from the coating nozzle 261. Specifically, first, the coating nozzle 261 is moved to a position above the center of the wafer W. Next, the spin chuck 221 is rotated, thereby rotating the wafer W, and during this rotation, the resist liquid from the coating nozzle 261 is discharged, for example, continuously toward the wafer W. The discharged resist liquid is spread over the entire surface of the wafer W by the rotation of the wafer W, and a liquid film of the resist liquid is formed on the wafer W.

[0085] Next, the liquid film of the resist liquid is dried to form a resist film (step S5c2). Specifically, the discharge of the solvent from the solvent nozzle 281 is stopped, and the coating nozzle 261 is retreated to the standby section 272. Furthermore, the rotation of the spin chuck 221, i.e., the rotation of the wafer W, is continued. As a result, the liquid film of the resist liquid is dried, and a resist film is formed.

[0086] Thereafter, the back surface of the wafer W is cleaned (step S5d). Specifically, first, a solvent is supplied from the solvent nozzle 281 to the outer periphery of the rear surface of the wafer W. More specifically, the spin chuck 221 is rotated, which rotates the wafer W, and during this rotation, the solvent from the solvent nozzle 281 is continuously discharged toward the wafer W. The discharged solvent that reaches the rear surface of the wafer W can remove the resist liquid and the like adhering to the rear surface of the wafer W. The solvent is then dried. Specifically, the discharge of the solvent from the solvent nozzle 281 is stopped, and the rotation of the spin chuck 221, that is, the rotation of the wafer W, is continued. This causes the solvent supplied to the outer periphery of the rear surface of the wafer W to dry. This step S5d may be omitted.

[0087] (Step S6: Executing the uncorrected processing process) On the other hand, when the temperature of the wafer W adjusted by the cooling plate 121 is uniform within the surface (step S3, YES), the resist film forming apparatus 200 performs an uncorrected processing process on the wafer W under the control of the control apparatus 100. That is, steps S5b and S5c of the above-mentioned step S5 are performed, and step S5d may also be performed.

[0088] Under the control of the control device 100, the resist film forming device 200 performs the corrected processing on the wafer W. This step S5 includes, for example, the following steps S5a, S5b, S5c, and S5d.

[0089] The above-mentioned operation of the wafer processing system 1 during the series of steps for forming the resist film may be applied only to the first wafer W of the process job. For the second and subsequent wafers W of the process job, the same processing process as that for the first wafer W may be applied without performing the wafer temperature measurement in step S2. A process job is a process for setting common processing conditions for multiple wafers W to be processed in succession, and is set, for example, for each cassette C, that is, for each lot.

[0090] <Major Effects> In this embodiment, the wafer processing system 1 includes a cooling plate 121, a temperature sensor 123 for measuring the temperature of the wafer W temperature-adjusted by the cooling plate 121, and a resist film forming apparatus 200 for forming a resist film on the wafer W temperature-adjusted by the cooling plate 121. The wafer processing system 1 also includes a control device 100, which corrects the process in the resist film forming apparatus 200 according to the temperature of the wafer W measured by the temperature sensor 123. Specifically, when the temperature of the wafer W temperature-adjusted by the cooling plate 121 is nonuniform within the surface, the control device 100 corrects the process in the resist film forming apparatus 200. More specifically, for example, when the temperature of the wafer W temperature-adjusted by the cooling plate 121 before the resist film formation is nonuniform within the surface, the control device 100 adds a pre-temperature adjustment process for additionally adjusting the temperature of the wafer W to the process in the resist film forming apparatus 200 at the start of the resist film formation process so as to alleviate the nonuniformity of the temperature within the surface. More specifically, when the temperature of the wafer W cooled by the cooling plate 121 before the resist film formation is non-uniform within the surface, the control device 100 adds a pre-cooling process to the process in the resist film forming device 200 to additionally cool the wafer W so as to alleviate the non-uniformity of the temperature within the surface at the start of the resist film formation process. Therefore, even if the temperature of the wafer W adjusted by the cooling plate 121 is non-uniform within the surface, the non-uniformity is alleviated at the time of the resist film formation, so that it is possible to prevent the resist film thickness, which is temperature-dependent at the time of the film formation, from becoming non-uniform within the surface of the wafer W. That is, according to this embodiment, it is possible to prevent the deterioration of the non-uniformity of the resist film thickness due to the non-uniformity, i.e., the variation, of the temperature of the wafer W after the temperature adjustment by the cooling plate 121.

[0091] In the present embodiment, the solvent nozzle 281 is also used for cleaning the back surface of the wafer W. Therefore, costs can be reduced compared to a case in which the solvent nozzle 281 is separately provided for cleaning the back surface of the wafer W and for the preliminary temperature adjustment process.

[0092] When the cooling plate 121 has the notch 121a through which a part of the transfer arm 110 (specifically, the claw 111a supporting the wafer W) passes, as in this embodiment, the temperature of the wafer W after temperature adjustment by the cooling plate 121 tends to be non-uniform within the surface. For this reason, the technology according to the present disclosure is useful when the cooling plate 121 has the above-mentioned notch 121a. Furthermore, when the cooling plate 121 has a portion that becomes a singular point for temperature adjustment such as the above-mentioned notch 121a, if the thermal conductivity of the wafer W is low, the temperature of the wafer W after temperature adjustment by the cooling plate 121 is likely to be non-uniform within the surface. Therefore, the technology according to the present disclosure is useful for a wafer W with low thermal conductivity (for example, a glass wafer having a lower thermal conductivity than a Si wafer).

[0093] Furthermore, in this embodiment, the above-mentioned operation of the wafer processing system 1 during the series of steps for forming the resist film is applied only to the first wafer W of the process job, and the second and subsequent wafers W of the process job are applied with the same process as the first wafer W without performing the wafer temperature measurement in step S2. That is, in this embodiment, the temperature of the entire surface is measured only for the first wafer W of the process job, that is, only for the first wafer W among the multiple wafers W for which common process conditions are set and processed consecutively. Also, based on this measurement result, the control device 100 determines whether the temperature of the first wafer W, i.e., the first wafer W, is non-uniform within the surface. If it is non-uniform, the control device 100 corrects the process in the resist film forming device 200 included in the process job corresponding to the first wafer W, that is, corrects the process common to the multiple wafers W including the first wafer W. Therefore, compared to a case where temperature measurement and determination of whether the temperature is non-uniform within the surface are performed for each wafer W, the life of the temperature sensor 123 can be extended and the calculation load of the control device 100 can be reduced. Incidentally, when the cooling plates 121 are stacked, in order to measure the temperature of the entire surface of the wafer W, it is necessary to provide the temperature sensor 123 above the uppermost cooling plate 121. In a configuration in which the temperature sensor 123 is provided at such a position, when performing temperature measurement for each wafer W, the temperature of each wafer W must be adjusted by the uppermost cooling plate 121, and there is room for improvement in terms of effective use of the cooling plates 121 other than the uppermost one. In contrast, in a configuration in which temperature measurement is performed only for the first wafer W, i.e., the first wafer W, as in this embodiment, the temperature of the second and subsequent wafers W of the process job, i.e., the second and subsequent wafers W of the multiple wafers W, may be adjusted by a cooling plate other than the uppermost one. That is, according to this embodiment, it is possible to effectively utilize the cooling plates other than the uppermost one.

[0094] The above-described operation of the wafer processing system 1 during the series of steps related to the formation of the resist film may be applied to all the wafers W. This makes it possible to more reliably prevent the deterioration of the in-plane uniformity of the resist film thickness caused by the in-plane non-uniformity of the temperature of the wafer W after the temperature adjustment by the cooling plate 121. Furthermore, the above operation may be applied not only to the first wafer W in the process job, but also to some of the other wafers W. In this case, for example, if the above operation is applied to the m-th wafer W and then to the n-th wafer (>m), the m+1-th to n-1-th wafers W are subjected to the same processing in the resist film forming apparatus 200 as the m-th wafer. Furthermore, for the intermediate or final wafer W of a process job, the temperature may be adjusted by the uppermost cooling plate 121 and the temperature may be measured by the temperature sensor 123, and the control device 100 may determine whether the measured temperature distribution has changed from that of the first wafer W. If there is a change, the treatment process applied to the wafers W after the first one in the resist film forming device 200 may be inappropriate, and therefore, under the control of the control device 100, a notification to that effect may be issued via a notification means such as a display device.

[0095] <Examples of pre-temperature adjustment conditions> The processing conditions of the pre-temperature adjustment process are constant regardless of the measurement result of the temperature of the wafer W, for example. Furthermore, the control device 100 may adjust, ie, change, the processing conditions of the pre-temperature adjustment process in response to the measurement result of the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121.

[0096] For example, the control device 100 may adjust the discharge position of the liquid from the solvent nozzle 281 to the back surface of the wafer W during the preliminary temperature adjustment process in response to the measurement result of the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121, specifically, based on the in-plane temperature distribution of the wafer W whose temperature has been adjusted by the cooling plate 121. More specifically, the control device 100 may adjust the discharge position from the solvent nozzle 281 so that the liquid collides with a portion of the wafer W whose temperature is higher (than a predetermined threshold) and is closest to the center of the wafer W.

[0097] In addition, the control device 100 may adjust the opening of the damper 237a during the pre-temperature adjustment process, that is, the exhaust amount from the cup 230, that is, the exhaust pressure, according to the measurement result of the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121. Specifically, when the temperature difference between the notch-corresponding region and the notch-non-corresponding region of the wafer W is large, that is, when the cooling amount of the notch-corresponding region of the wafer W is largely insufficient, the control device 100 may adjust the opening of the damper 237a during the pre-temperature adjustment process to be larger, that is, the exhaust pressure from the cup 230 to be larger. This promotes the evaporation of the solvent, so that the outer periphery of the wafer W including the notch-corresponding region is strongly cooled. As a result, the in-plane temperature uniformity of the wafer W during the formation of the resist film can be improved. Furthermore, when the temperature difference between the notch corresponding area and the notch non-corresponding area of ​​the wafer W whose temperature has been adjusted by the cooling plate 121 is small, the controller 100 may reduce the opening degree of the damper 237a during the pre-temperature adjustment process. Furthermore, the inventors have confirmed that for a wafer W whose temperature is non-uniform across its surface during temperature adjustment by the cooling plate 121, the in-surface uniformity of the thickness of the resist film obtained after the pre-temperature adjustment process increases with an increase in the exhaust pressure from the cup 230 during the pre-temperature adjustment process (i.e., the in-surface uniformity of the temperature of the wafer W during resist film formation increases).

[0098] Furthermore, when adjusting the opening degree of the damper 237a, if the opening degree is large, the temperature of the wafer W may drop too much. Therefore, the following may be done. That is, for example, when the temperature difference between the notch corresponding area and the notch non-corresponding area of ​​the wafer W is large, the control device 100 first adjusts the opening degree of the damper 237a to full open. Furthermore, the control device 100 causes a film thickness measuring device (not shown) to measure the thickness of the resist film formed on the wafer W by the pre-temperature adjustment process at that opening degree. If the film thickness is not uniform, the control device 100 repeats the adjustment to reduce the opening degree of the damper 237a, the formation of the resist film, and the measurement of the film thickness until the film thickness becomes uniform.

[0099] Furthermore, the control device 100 may adjust the drying time of the solvent during the pre-temperature adjustment process (i.e., the time for rotating the wafer W in step S5b2) in accordance with the measurement result of the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121. Specifically, when there is a large temperature difference between the notch-corresponding region and the notch-non-corresponding region of the wafer W, the control device 100 may adjust the drying time of the solvent during the pre-temperature adjustment process to be longer. Furthermore, the inventors have confirmed that the in-plane uniformity of the thickness of the resist film increases (i.e., the in-plane uniformity of the temperature of the wafer W during resist film formation increases) as the drying time of the solvent during pre-temperature adjustment processing (specifically, pre-cooling processing) increases.

[0100] Furthermore, the control device 100 may adjust the solvent supply time during the pre-temperature adjustment process (i.e., the solvent time in step S5b1) in accordance with the measurement result of the temperature of the wafer W whose temperature has been adjusted by the cooling plate 121. Specifically, when there is a large temperature difference between the notch-corresponding region and the notch-non-corresponding region of the wafer W, the control device 100 may adjust the solvent supply time during the pre-temperature adjustment process to be longer. Furthermore, the inventors have confirmed that the in-plane uniformity of the thickness of the resist film increases (i.e., the in-plane uniformity of the temperature of the wafer W during resist film formation increases) as the solvent supply time during pre-temperature adjustment processing (specifically, pre-cooling processing) increases.

[0101] <Other Modifications> In the above example, the control device 100 corrects the process in the resist film forming device 200 only when the temperature difference of the wafer W, which is adjusted by the cooling plate 121 between the notch corresponding region and the non-notch corresponding region, exceeds a threshold value (first threshold value) (hereinafter referred to as the first case). Alternatively, the control device may correct the process in the resist film forming device 200 also when the difference between the temperature of the wafer W, which is adjusted by the cooling plate 121 in the non-notch corresponding region, and the target temperature exceeds a second threshold value (hereinafter referred to as the second case). In this case, the control device 100 makes the correction content of the process in the resist film forming device 200 different between the first case and the second case. For example, in the first case, the control device 100 performs a correction to add a pre-temperature adjustment process to the process, and in the second case, performs a correction to the rotation speed of the wafer W during the resist coating process. In the second case, more specifically, the control device 100 corrects the rotation speed of the wafer W during the drying process of the resist liquid film included in the resist coating process (ie, the rotation speed of the wafer W in step S5c2). In addition, when both the first and second cases apply, the control device 100 may only perform a correction to add a pre-temperature adjustment process to the above-mentioned processing process, or in addition to the correction, may also perform a correction of the rotation speed of the wafer W during the resist coating process.

[0102] In the above example, the measurement result by the temperature sensor 123 is used as is to determine whether the temperature of the wafer adjusted by the cooling plate 121 is uniform within the surface. Alternatively, the control device 100 may predict the temperature of the wafer W immediately before the resist coating process (specifically, its in-surface distribution) from the measurement result, and determine whether the temperature of the wafer W immediately before the resist coating process is uniform within the surface.

[0103] In the above example, the temperature of the wafer W whose temperature is adjusted by the cooling plate 121 is acquired by actually measuring it with the temperature sensor 123, but the method of acquiring the temperature is not limited to this. For example, the following may be performed. First, the wafer W is subjected to temperature adjustment by the cooling plate 121 and a resist film forming process by the resist film forming device to actually form a resist film on the wafer W. Then, the in-plane distribution of the formed film thickness may be measured by the film thickness measuring device, and the control device 100 may acquire the temperature of the wafer W (specifically, the in-plane distribution of the temperature of the wafer W) from the film thickness measurement result and a film thickness-temperature correlation model acquired in advance. The film thickness-temperature correlation model is a model that indicates the relationship between the thickness of the resist film and the temperature of the wafer W (specifically, the temperature of the wafer W at the time of forming the resist film) that has been temperature-adjusted by the cooling plate 121. The film thickness measuring device may be a known device, and may be provided, for example, in the third block G3 of the wafer processing system 1. When the temperature of the wafer W is acquired in this manner, the process corrected based on the acquired temperature result is applied to the subsequent wafers W. In this example, the control device 100 functions as a temperature acquisition unit.

[0104] In the above example, the control device 100 corrects the treatment process in the resist film forming device 200 based on the result of judging whether the temperature of the wafer temperature-adjusted by the cooling plate 121 is uniform within the surface. Alternatively, the control device 100 may judge whether the within-surface distribution of the temperature of the wafer temperature-adjusted by the cooling plate 121 corresponds to the arrangement position of the notch 121a. If the distribution corresponds to the arrangement position, the treatment process in the resist film forming device 200 is corrected (specifically, a pre-temperature adjustment process), and if the distribution does not correspond to the arrangement position, the correction may not be performed.

[0105] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components in the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0106] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects.

[0107] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) a temperature adjustment unit for adjusting the temperature of the substrate; a temperature acquisition unit that acquires the temperature of the substrate that has been adjusted by the temperature adjustment unit; a coating processing unit that performs a treatment process including a coating process for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit; A control unit, The control unit corrects a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired by the temperature acquisition unit. (2) the coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, The substrate processing apparatus described in (1), wherein the control unit, when correcting the treatment process, adds a pre-temperature adjustment process to the treatment process before the coating process, in which the liquid is discharged from the back surface discharge unit to the back surface of the substrate and the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit is further adjusted. (3) The substrate processing apparatus described in (2), wherein the control unit adjusts the ejection position of the liquid from the back surface ejection unit to the back surface of the substrate during the pre-temperature adjustment process based on the in-plane distribution of the temperature of the substrate adjusted by the temperature adjustment unit. (4) the temperature acquisition unit is a temperature measurement unit that measures a temperature of the substrate, The substrate processing apparatus according to any one of (1) to (3), wherein the temperature measuring unit is provided above the temperature adjusting unit so as to measure the temperature of the entire surface of the substrate supported by the temperature adjusting unit. (5) The substrate processing apparatus according to (4), wherein the temperature adjustment unit has a notch through which a part of a transport arm that transports the substrate passes. (6) The temperature adjustment unit is stacked in a vertical direction in multiple stages, The substrate processing apparatus described in (5) above, wherein the temperature measurement unit is provided above the uppermost temperature adjustment unit so as to measure the temperature of the entire surface of the substrate supported by the uppermost temperature adjustment unit. (7) the temperature measurement unit measures the temperature of an entire surface of a leading substrate among a plurality of substrates that are successively processed under common processing conditions while the leading substrate is supported by the uppermost temperature adjustment unit; The substrate processing apparatus according to (6), wherein the control unit corrects the processing process common to the plurality of substrates including the first substrate when the temperature of the first substrate is non-uniform within a surface of the first substrate. (8) When the surface of the substrate is divided into a plurality of regions, the divided regions are: The control unit is determining whether or not the temperature is uniform within a surface of the substrate based on the temperature of the substrate adjusted by the temperature adjustment unit for each divided region; The substrate processing apparatus according to any one of (1) to (7), wherein, when the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within a surface thereof, the processing process in the coating processing unit is corrected. (9) The temperature adjustment unit has a notch through which a part of a transport arm that transports the substrate passes, The substrate processing apparatus according to (8), wherein the divided regions are divided according to positions of the notches relative to the substrate. (10) The substrate processing apparatus described in (9), wherein the control unit determines whether the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit is uniform within the surface based on a comparison result between the temperature of a region of the substrate whose temperature has been adjusted by the temperature adjustment unit and that corresponds to the notch, and the temperature of a region of the substrate whose temperature has been adjusted by the temperature adjustment unit and that does not correspond to the notch. (11) The control unit in a first case in which a difference in temperature of the substrate, temperature-adjusted by the temperature adjustment unit, between a region corresponding to the notch and a region not corresponding to the notch exceeds a first threshold value, determining that the temperature of the substrate, temperature-adjusted by the temperature adjustment unit, is non-uniform within a surface thereof, and correcting a treatment process in the coating treatment unit; correcting the treatment process in the coating processing unit even in a second case in which a difference between a temperature of the substrate adjusted by the temperature adjustment unit in a region not corresponding to the notch and a target temperature exceeds a second threshold value; The substrate processing apparatus according to (10), wherein the correction content of the treatment process in the coating processing unit is made different between the first case and the second case. (12) The coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, The control unit is In the first case, as a correction of the treatment process, a correction is performed by adding a pre-temperature adjustment process to the treatment process, which discharges the liquid from the back surface discharge unit onto the back surface of the substrate and further adjusts the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit, before the coating process; In the second case, the substrate processing apparatus according to (1) above corrects a rotation speed of the substrate during the coating process as the correction of the treatment process. (13) adjusting the temperature of the substrate by a temperature adjustment unit; acquiring a temperature of the substrate adjusted by the temperature adjustment unit; performing a treatment process including a coating treatment for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit, by a coating processing unit; and correcting a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired in the acquiring step. (14) The coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, The substrate processing method according to (13), wherein the correction step includes adding a pre-temperature adjustment process to the processing process before the coating process, in which the liquid is discharged from the back surface discharge unit onto the back surface of the substrate and the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit is further adjusted. (15) The substrate processing method according to (13) or (14), wherein the temperature acquiring step is a step of measuring the temperature of the substrate, and the temperature of the entire surface of the substrate is measured by a temperature measuring unit provided above the temperature adjustment unit. (16) The substrate processing method according to (15), wherein the temperature adjustment unit has a notch through which a part of a transfer arm that transfers the substrate passes. (17) When the divided regions are regions obtained by dividing the surface of the substrate into a plurality of regions, The step of correcting includes: determining whether or not the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within a surface of the substrate based on the temperature of the substrate adjusted by the temperature adjustment unit for each divided region; The substrate processing method according to any one of (13) to (15), further comprising correcting a processing process in the coating processing unit when the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within the surface of the substrate. (18) The temperature adjustment unit has a notch through which a part of a transport arm that transports the substrate passes, The substrate processing method according to (17), wherein the divided regions are divided according to positions of the notches relative to the substrate. (19) A readable computer storage medium storing a program that runs on a computer of a control unit that controls a substrate processing apparatus so as to cause the substrate processing apparatus to execute a substrate processing method. The substrate processing method adjusting the temperature of the substrate by a temperature adjustment unit; acquiring a temperature of the substrate adjusted by the temperature adjustment unit; performing a treatment process including a coating treatment for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit, by a coating processing unit; and correcting a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired in the acquiring step. [Explanation of symbols]

[0108] 1. Wafer Processing System 100 Control device 121 Cooling plate 123 Temperature Sensor 200 Resist film forming device H storage medium W wafer

Claims

1. A temperature adjustment unit that adjusts the temperature of the substrate; a temperature acquisition unit that acquires the temperature of the substrate that has been adjusted by the temperature adjustment unit; a coating processing unit that performs a treatment process including a coating process for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit; A control unit, The control unit corrects a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired by the temperature acquisition unit.

2. the coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, 2. The substrate processing apparatus according to claim 1, wherein the control unit, when correcting the treatment process, adds a pre-temperature adjustment process to the treatment process before the coating process, in which the liquid is discharged from the back surface discharge unit to the back surface of the substrate and the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit is further adjusted.

3. 3. The substrate processing apparatus according to claim 2, wherein the control unit adjusts a position at which the liquid is ejected from the back surface ejection unit to the back surface of the substrate during the pre-temperature adjustment process based on an in-plane distribution of the temperature of the substrate adjusted by the temperature adjustment unit.

4. the temperature acquisition unit is a temperature measurement unit that measures a temperature of the substrate, 4. The substrate processing apparatus according to claim 1, wherein the temperature measuring unit is provided above the temperature adjusting unit so as to measure the temperature of the entire surface of the substrate supported by the temperature adjusting unit.

5. The substrate processing apparatus according to claim 4 , wherein the temperature adjustment section has a notch through which a part of a transfer arm for transferring the substrate passes.

6. The temperature adjustment unit is stacked in a vertical direction in multiple stages, The substrate processing apparatus according to claim 5 , wherein the temperature measuring unit is provided above the uppermost temperature adjusting unit so as to be able to measure the temperature of the entire surface of the substrate supported by the uppermost temperature adjusting unit.

7. the temperature measurement unit measures the temperature of an entire surface of a leading substrate among a plurality of substrates that are successively processed under common processing conditions while the leading substrate is supported by the uppermost temperature adjustment unit; The substrate processing apparatus according to claim 6 , wherein the control unit corrects the processing process common to the plurality of substrates including the first substrate when the temperature of the first substrate is non-uniform within a surface of the first substrate.

8. When the surface of the substrate is divided into a plurality of regions, the divided regions are: The control unit is determining whether or not the temperature is uniform within a surface of the substrate based on the temperature of the substrate adjusted by the temperature adjustment unit for each divided region; 4. The substrate processing apparatus according to claim 1, further comprising: a processing step of correcting a processing process in the coating processing unit when the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within the surface of the substrate.

9. the temperature adjustment unit has a notch through which a part of a transport arm that transports the substrate passes, The substrate processing apparatus according to claim 8 , wherein the divided regions are formed according to positions of the notches relative to the substrate.

10. 10. The substrate processing apparatus of claim 9, wherein the control unit determines whether the temperature of the substrate temperature-adjusted by the temperature adjustment unit is uniform within a surface based on a comparison result between a temperature of a region of the substrate corresponding to the notch whose temperature has been adjusted by the temperature adjustment unit and a temperature of a region of the substrate not corresponding to the notch whose temperature has been adjusted by the temperature adjustment unit.

11. The control unit is in a first case in which a difference in temperature of the substrate, temperature-adjusted by the temperature adjustment unit, between a region corresponding to the notch and a region not corresponding to the notch exceeds a first threshold value, determining that the temperature of the substrate, temperature-adjusted by the temperature adjustment unit, is non-uniform within a surface thereof, and correcting a treatment process in the coating processing unit; correcting the treatment process in the coating processing unit even in a second case in which a difference between a temperature of the substrate adjusted by the temperature adjustment unit in a region not corresponding to the notch and a target temperature exceeds a second threshold value; The substrate processing apparatus according to claim 10 , wherein correction contents of the processing process in the coating processing unit are made different between the first case and the second case.

12. the coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, The control unit is In the first case, as a correction of the treatment process, a correction is performed by adding a pre-temperature adjustment process to the treatment process, which discharges the liquid from the back surface discharge unit onto the back surface of the substrate and further adjusts the temperature of the substrate whose temperature has been adjusted by the temperature adjustment unit, before the coating process; The substrate processing apparatus according to claim 11 , wherein in the second case, the correction of the treatment process includes correction of a rotation speed of the substrate during the coating treatment.

13. adjusting the temperature of the substrate by a temperature adjustment unit; acquiring a temperature of the substrate adjusted by the temperature adjustment unit; performing a treatment process including a coating treatment for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit, by a coating processing unit; and correcting a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired in the acquiring step.

14. the coating processing unit has a back surface discharge unit that discharges a liquid onto a back surface of the substrate, 14. The substrate processing method according to claim 13, wherein the correction step adds a pre-temperature adjustment process to the processing process before the coating process, in which the liquid is discharged from the back surface discharge section onto the back surface of the substrate and the temperature of the substrate whose temperature has been adjusted by the temperature adjustment section is further adjusted.

15. 15. The substrate processing method according to claim 13, wherein the temperature acquiring step is a step of measuring a temperature of the substrate, and the temperature of the entire surface of the substrate is measured by a temperature measuring unit provided above the temperature adjusting unit.

16. The substrate processing method according to claim 15 , wherein the temperature adjustment unit has a notch through which a part of a transfer arm that transfers the substrate passes.

17. When the surface of the substrate is divided into a plurality of regions, the divided regions are: The step of correcting includes: determining whether or not the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within a surface of the substrate based on the temperature of the substrate adjusted by the temperature adjustment unit for each divided region; 15. The substrate processing method according to claim 13, further comprising the step of correcting a processing process in the coating processing unit when the temperature of the substrate adjusted by the temperature adjustment unit is non-uniform within a surface of the substrate.

18. the temperature adjustment unit has a notch through which a part of a transport arm that transports the substrate passes, The substrate processing method according to claim 17 , wherein the divided regions are formed according to positions of the notches relative to the substrate.

19. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate processing apparatus so as to cause the substrate processing apparatus to execute a substrate processing method. The substrate processing method adjusting the temperature of the substrate by a temperature adjustment unit; acquiring a temperature of the substrate adjusted by the temperature adjustment unit; performing a treatment process including a coating treatment for forming a coating film on the substrate whose temperature has been adjusted by the temperature adjustment unit, by a coating processing unit; and correcting a treatment process in the coating processing unit in accordance with the temperature of the substrate acquired in the acquiring step.

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