Integrated-type hall sensor

Abstract

To reliably and efficiently capture magnetic particles in a Hall element part.SOLUTION: An integrated-type Hall sensor includes: a Hall element array layer constituted of a plurality of Hall element parts for capturing magnetic particles; and a high magnetic permeability thin wire adjacent to the plurality of Hall element parts and generating a magnetic field for capturing a magnetic substance to be detected on the plurality of Hall element parts.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to integrated Hall sensors. [Background technology]

[0002] Hall elements have been used for various purposes as elements to detect magnetism. Hall elements detect magnetism by utilizing the electromotive force caused by the Lorentz force acting on electric current, i.e., the Hall effect. Therefore, a pair of terminals for driving the current and a pair of terminals for detecting the electromotive force are required.

[0003] For example, Patent Document 1 discloses a Hall sensor that is made up of multiple Hall elements for detecting magnetic particles, and uses a selection transistor to obtain the output of one element from the multiple Hall elements. Patent Document 2 discloses a Hall sensor with an integrated structure that reduces the number of terminals by providing a transistor that opens and closes the output terminals of adjacent Hall elements in multiple Hall elements for detecting magnetic particles. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-212233 A [Patent Document 2] JP 2007-180215 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, Patent Documents 1 and 2 do not have a means for capturing the magnetic particles to be measured in the Hall element detection section (Hall element section). Therefore, it cannot be excluded that the magnetic particles may be located between the Hall elements or on the terminals other than the Hall element detection section, making it difficult to obtain a large signal relative to the amount of magnetic particles input. In view of the above circumstances, the present disclosure proposes a technique for reliably and efficiently capturing magnetic particles in a Hall element portion. [Means for solving the problem]

[0006] In order to solve the above problems, the present disclosure provides an integrated Hall sensor comprising: a Hall element array layer composed of a plurality of Hall element portions that capture magnetic particles; and a high-permeability thin wire adjacent to the plurality of Hall element portions and above the plurality of Hall element portions that generates a magnetic field for capturing the magnetic material to be detected.

[0007] Further features related to the present disclosure will become apparent from the description of the present specification and the accompanying drawings. Also, aspects of the present disclosure may be realized and realized by the elements and combinations of various elements and aspects set forth in the following detailed description and the appended claims. The descriptions in this specification are merely exemplary and illustrative and are not intended to limit the scope or application of the present disclosure in any way. Effect of the Invention

[0008] According to the technique of the present disclosure, it is possible to improve the performance of the Hall sensor, specifically, it is possible to efficiently capture the magnetic particles to be detected in the Hall sensor detection portion, and it is possible to efficiently detect the magnetic particles. [Brief description of the drawings]

[0009] [Figure 1] 1 is a diagram showing a configuration example of a microstructure Hall sensor according to a first embodiment; [Diagram 2] 2 is a diagram showing an example of a cross-sectional configuration of a microstructure Hall sensor taken along a plane passing through a gate wiring 14 in FIG. 1. [Diagram 3] 2 is a diagram showing an example of a circuit configuration of the microstructure Hall sensor in FIG. 1. [Figure 4] FIG. 11 is a diagram illustrating a configuration example of a Hall sensor according to a second embodiment. [Diagram 5]5 is a diagram showing an example of a cross-sectional configuration taken along a plane passing through a hall element portion 41 in FIG. 4. [Figure 6] FIG. 13 is a diagram illustrating a configuration example of a Hall sensor according to a third embodiment. [Figure 7] 7 is a diagram showing an example of a cross-sectional configuration in a plane passing through a gate line 14 in FIG. 6. FIG. [Figure 8] 13 is a diagram showing the simulation results of magnetization occurring in the short axis direction of high permeability thin wire 13 when an external magnetic field (by transverse magnetic field applying magnet 17 or the like) is applied in the short axis direction of high permeability thin wire 13. FIG. [Figure 9] FIG. 13 is a diagram showing the results of a simulation conducted to examine the influence (magnetic field direction of magnetization of magnetic particles) of forming a high-permeability thin wire 13 in the vicinity of a Hall element unit 11 in Hall voltage measurement. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] This embodiment proposes a Hall sensor that efficiently detects magnetic particles in areas where the target substance (e.g., antigens, antibodies, etc., but are not limited to these) is at low concentration (areas where there are few magnetic particles that have adsorbed the target substance).

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In the accompanying drawings, functionally identical elements may be indicated by the same numbers. Note that the accompanying drawings show specific embodiments and implementation examples according to the principles of the present disclosure, but these are for understanding the present disclosure and are by no means used to interpret the present disclosure in a limiting manner.

[0012] In the present embodiment, the description is given in sufficient detail for a person skilled in the art to implement the present disclosure, but it should be understood that other implementations and forms are possible, and that changes in configuration and structure and substitutions of various elements are possible without departing from the scope and spirit of the technical ideas of the present disclosure. Therefore, the following description should not be interpreted as being limited thereto.

[0013] (1) First embodiment The first embodiment proposes a Hall sensor with improved magnetic particle capture performance by arranging a high-permeability thin wire. Specifically, the Hall sensor (integrated Hall sensor) according to the first embodiment captures the magnetic particles to be detected on the upper part of the Hall element in order to efficiently detect the magnetic field leaking from the magnetic material to be detected by the Hall element (Hall element part). The main feature of the Hall sensor to achieve this is that a high-permeability material processed into a thin wire is arranged near the Hall element array layer, and an external magnetic field is applied almost parallel to the Hall element array layer and almost perpendicular to the longitudinal (long axis) direction of the thin wire of the high-permeability material. In this specification, the term "high-permeability material" is used in the same sense as a soft magnetic material. In other words, a material whose magnetization curve has a slender hysteresis and whose magnetization changes sensitively to an external magnetic field corresponds to a "high-permeability material".

[0014] <Example of Hall sensor structure> 1 is a diagram showing a configuration example of a microstructure Hall sensor according to a first embodiment. The Hall sensor of this embodiment (constituting a part of a sensor chip 1) includes a semiconductor substrate 10, a two-dimensional electron gas layer 12 formed on the semiconductor substrate 10, a high-permeability thin wire 13, a gate wiring 14, an output terminal 15, a ground wiring 16, and a MOS transistor, and is provided with a Hall element section 11. The two-dimensional electron gas layer 12 corresponds to the Hall element section 11 and can be made of gallium arsenide, indium arsenide, or the like, but graphene may be used instead of the two-dimensional electron gas layer 12.

[0015] The high permeability thin wire 13 is formed close to the Hall element portion 11 and obliquely above it. As shown in FIG. 1, when the Hall sensor or the sensor chip 1 is viewed from directly above, the high permeability thin wire 13 is arranged so as not to overlap with the two-dimensional electron gas layer 12. The high permeability thin wire 13 must exhibit good soft magnetic properties (made of a soft magnetic material). For this reason, the material of the high permeability thin wire 13 may contain at least one of Fe, Ni, Co, or an alloy thereof (which are soft magnetic materials). In particular, when Ni is used, it is preferable that the Ni ratio is 50% or more. In FIG. 1, a gate wiring 14, an output terminal 15, and a ground wiring 16 are wirings of a transistor for selecting a Hall element of an integrated Hall sensor.

[0016] The Hall sensor according to this embodiment is equipped with a magnet (not shown) that applies a magnetic field in a vertical direction, as in the case of a normal Hall sensor, but in addition, it is equipped with a transverse magnetic field applying magnet 17. This transverse magnetic field applying magnet 17 makes it possible to apply a magnetic field substantially perpendicular to the thin wire direction of the high permeability thin wire 13. A permanent magnet or an electromagnet having a coil structure can be used as the transverse magnetic field applying magnet 17.

[0017] 2 is a diagram showing an example of a cross-sectional configuration of the microstructure Hall sensor in a plane passing through the gate wiring 14 in FIG. 1. As shown in FIG. 2, the high permeability thin wire 13 is separated from the two-dimensional electron gas layer 12 and the gate wiring 14 by an insulating layer 24. The Hall sensor also has a well-known MOS transistor consisting of a source 21, a gate 22, and a drain (output terminal) 15. The Hall voltage generated at the source 21 with respect to the reference voltage of the ground wiring 16 is detected as an output voltage by the drain 15 by opening and closing the gate 22. In the integrated Hall sensor, the Hall element can be selected by opening and closing the gate 22.

[0018] <Example of Hall sensor circuit configuration> 3 is a diagram showing an example of a circuit configuration of the microstructure Hall sensor in FIG. 1. The Hall sensor includes, as a circuit configuration, a plurality of Hall elements (corresponding to the Hall element section 11) 34, an input current selector 32 connected to each of the plurality of Hall elements 34 via an input current terminal 35, a plurality of MOS transistors whose sources 21 are connected to each Hall element 34, a sense amplifier 31 connected to a gate wiring 14 to which the drains 15 of each MOS transistor are connected, a gate selector 33, and a ground wiring 16. When a signal from a specific Hall element 34 is to be acquired, the input current selector 32 selects one row of the Hall elements 34 arranged in rows and columns, and a current is supplied to the two-dimensional electron gas layer through the input current terminal 35. Then, the terminal side connected to the ground wiring 16 is used as a reference, and a gate selector 33 connected to the MOS transistor selects one row of the Hall elements 34, and the Hall voltage generated in the Hall elements 34 output to the output terminal 15 is detected by the sense amplifier 31.

[0019] <Effects of installing high permeability thin wires> In order to quantitatively detect sparse magnetic particles in a microstructure Hall sensor, it is necessary to efficiently capture the magnetic particles in the Hall element section 11. For this reason, in the first embodiment (as in other embodiments), as shown in FIG. 1, a high-permeability thin wire 13 is provided near the Hall element section 11. Due to the shape magnetic anisotropy of the high-permeability thin wire 13, its magnetization direction is oriented in the long axis (longitudinal) direction of the high-permeability thin wire 13. In an initial state in which the magnetic particles are attached to the entire upper part of the Hall sensor on average and there is no applied magnetic field, the magnetic particles are hardly affected by the magnetization of the high-permeability thin wire 13. In this initial state, when a magnetic field is applied by the transverse magnetic field application magnet 17 in a direction substantially parallel to the Hall element surface and substantially perpendicular to the magnetization direction of the high-permeability thin wire 13, that is, in the short axis (short side) direction of the high-permeability thin wire 13, the magnetization of the high-permeability thin wire 13 has a component in the direction of the applied magnetic field by the transverse magnetic field application magnet 17. The magnetic particles are affected by the applied magnetic field and the leakage magnetic field of the magnetization of the high permeability thin wire 13 in the direction of the applied magnetic field, and are captured by the side wall of the high permeability thin wire 13, i.e., the Hall element section 11 (a position within the Hall element section 11, closer to the high permeability thin wire 13).

[0020] The high permeability thin wire 13 can have a length of 500 to 1000 nm, a width of 50 to 200 nm, and a thickness of 2.5 to 5 nm. The magnitude of the magnetic field applied in the minor axis direction of the high permeability thin wire 13 is preferably 50 Oe or more.

[0021] (2) Second embodiment Fig. 4 is a diagram showing a configuration example of a Hall sensor according to the second embodiment. The Hall sensor according to the second embodiment has a one-dimensional integrated structure as shown in Fig. 4. The Hall sensor according to the second embodiment differs from the Hall sensor according to the first embodiment in that the Hall sensor according to the second embodiment does not include a MOS transistor for selecting a Hall element and its wiring.

[0022] The Hall sensor includes a semiconductor substrate 40, a two-dimensional electron gas layer 42 formed on the semiconductor substrate 40, a high-permeability thin wire 43, an output terminal 44, and a ground wiring 45. The two-dimensional electron gas layer 42 corresponds to the Hall element section 41, as in the first embodiment. Also, as in the first embodiment, the high-permeability thin wire 43 is formed close to and above the Hall element section 41. Also, when the Hall sensor or the sensor chip 1 is viewed from directly above, the high-permeability thin wire 13 is arranged so as not to overlap with the two-dimensional electron gas layer 12.

[0023] In addition, the Hall sensor according to the second embodiment is also configured so that, in addition to the measurement magnetic field from the vertical direction (magnetic field application means not shown), a magnetic field can be applied in a direction approximately perpendicular (short axis (short side) direction) to the long axis direction (longitudinal direction) of the high permeability thin wire 43 by using the transverse magnetic field application magnet 47 shown in Figure 4.

[0024] 5 is a diagram showing an example of a cross-sectional configuration in a plane passing through the Hall element section 41 in FIG. 4. As shown in FIG. 5, in the Hall sensor according to this embodiment, the two-dimensional electron gas layer 42 corresponding to the Hall element section 41 and the high permeability thin wire 43 are separated by an insulating layer 46. As described above, the Hall sensor according to this embodiment has a one-dimensional integrated structure, unlike the first embodiment. Therefore, a MOS transistor for selecting a specific Hall element section 41 is not required. The magnetic field applied parallel to the Hall element plane for capturing magnetic particles (magnetic field by the transverse magnetic field applying magnet 17) has the same magnitude as the magnetic field in FIG. 1.

[0025] (3) Third embodiment Fig. 6 is a diagram showing a configuration example of a Hall sensor according to the third embodiment. The Hall element portion constituting the Hall sensor may be structured as a recess as shown in Fig. 6 to facilitate capturing magnetic particles.

[0026] The Hall sensor includes a semiconductor substrate 10, a two-dimensional electron gas layer 12 formed on the semiconductor substrate 10, a high-permeability thin wire 13, a gate wiring 14, an output terminal 15, and a ground wiring 16. The two-dimensional electron gas layer 12 corresponds to a Hall element portion 11.

[0027] As in the first embodiment, the high permeability thin wire 13 is formed close to the Hall element section 11 and above the two-dimensional electron gas layer 12 corresponding to the Hall element section 11 (in a layer above the layer where the two-dimensional electron gas layer 12 is provided). As in the first embodiment, the high permeability thin wire 13 is arranged so as not to overlap the two-dimensional electron gas layer 12 when the Hall sensor or the sensor chip 6 is viewed from directly above. The Hall sensor also includes a transverse magnetic field application magnet 17, which allows a magnetic field to be applied substantially perpendicular to the thin wire direction of the high permeability thin wire 13.

[0028] The gate wiring 14, the output terminal 15, and the ground wiring 16 are each a transistor wiring for selecting a specific Hall element unit 11 from the multiple Hall element units 11 of the integrated Hall sensor.

[0029] 7 is a diagram showing an example of a cross-sectional configuration in a plane passing through the gate wiring 14 in FIG. 6. The high permeability thin wire 13 is separated from the two-dimensional electron gas layer 12 and the gate wiring 14 by an insulating layer 24 and an insulating layer 25, respectively. The source 21, the gate 22, and the drain (output terminal) 15 in the figure form a well-known MOS transistor. By applying a voltage to the input current selector 32 and the gate selector 33, the gate 22 of the MOS transistor corresponding to the desired Hall element section 11 is opened or closed (MOS transistor ON: selecting the desired Hall element section 11 of the integrated Hall sensor), and the voltage detected at the source 21 is output to the sense amplifier 31 via the drain (output terminal) 15.

[0030] The magnetic field applied parallel to the plane of the Hall element unit 11 for capturing the magnetic particles (the magnetic field produced by the transverse magnetic field applying magnet 47) has the same magnitude as the magnetic field in FIG.

[0031] (4) Experimental Example <Experimental Example 1> The present inventors evaluated by simulation the magnitude of the leakage magnetic field from the high permeability thin wire 13 required to capture the magnetic particles in the Hall element section (the degree to which the magnetic field in the longitudinal direction of the high permeability thin wire 13 is shifted by the application of a transverse magnetic field). 81 Fe 19 With the exchange interaction A = 13.0 × 10 ―12 J / m, saturation magnetization M=8.0×10 5 A / m and uniaxial anisotropy were set to zero. The inventors also set the size of the high permeability thin wire 13 to a width of 200 nm and a thickness of 2.5 nm, and the length was made a variable.

[0032] FIG. 8 is a diagram showing the simulation results of magnetization occurring in the short axis direction of the high permeability thin wire 13 when an external magnetic field (by a transverse magnetic field applying magnet 17, etc.) is applied in the short axis direction of the high permeability thin wire 13. FIG. 8 shows the simulation results when the magnitude of the external magnetic field is changed to 15, 50, 100, and 200 Oe, and the magnitude of magnetization is normalized by the saturation magnetic field (magnetic field appearing in the longitudinal direction of the high permeability thin wire 13). As can be seen from FIG. 8, when the magnitude of the external magnetic field is 50 Oe, magnetization of about 10% of the saturation magnetization occurs in the short axis direction of the high permeability thin wire 13. In addition, assuming that the length of the high permeability thin wire 13 is 500 nm and the distance from the high permeability thin wire 13 is 50 nm, the magnitude of the leakage magnetic field at this time can be evaluated to be about 160 Oe. Therefore, when combined with the applied magnetic field, it is large enough to capture magnetic particles.

[0033] <Experimental Example 2> 9 is a diagram showing the results of a simulation conducted to examine the effect (magnetic field direction of magnetization of magnetic particles) of forming a high-permeability thin wire 13 in the vicinity of the Hall element unit 11 in Hall voltage measurement. As in Experimental Example 1, the inventors used Ni 81 Fe 19 The inventors selected the following parameters for Fe3O4: exchange interaction A=5.0×10 ―12 J / m, saturation magnetization M=4.77×10 5 The magnetic anisotropy was set to 0. The size of the high permeability thin wire 13 was the same as in the first experimental example.

[0034] FIG. 9 shows the magnetic field direction component of the magnetization of a magnetic particle 50 nm away from the high permeability thin wire 13 under the arrangement of a magnetic field (magnetic field applied vertically to the Hall sensor) in the Hall voltage measurement. When the magnitude of the measured magnetic field is 50 Oe, the magnitude of the magnetization is 80% of the saturation magnetization. This is a value that is almost close to saturation. Also, from FIG. 9, it can be seen that when the magnitude of the measured magnetic field is 20 Oe or more, the magnitude of the magnetization is almost proportional to the measured magnetic field. From this, the influence of the high permeability thin wire 13 in the Hall voltage measurement can be ignored. In other words, it was found that by installing the high permeability thin wire 13 in the Hall sensor, it becomes possible to efficiently capture the magnetic particles in the Hall element section 11 without adversely affecting the Hall voltage measurement.

[0035] (5) Summary As shown in Figs. 1, 4, and 6, the integrated Hall sensor according to this embodiment includes a Hall element array layer (e.g., a layer including a two-dimensional electron gas layer 12 or 42) composed of a plurality of Hall element units 11 or 41 that capture magnetic particles, and a high-permeability thin wire 13 or 43 that is adjacent to the plurality of Hall element units and generates a magnetic field for capturing a magnetic material to be detected above the plurality of Hall element units. Such an integrated Hall sensor makes it possible to efficiently capture a magnetic material (particle) in the Hall element unit 11 or 41. The position where the magnetic material is captured is a location near the high-permeability thin wire in each Hall element unit. The high-permeability thin wire can be made of a soft magnetic material and is magnetized in the longitudinal direction.

[0036] More specifically, the high permeability thin wire is arranged above (in a layer above) the Hall element array layer. This makes it possible to capture magnetic particles reliably. In addition, since the integrated Hall sensor is manufactured based on a semiconductor, by arranging the high permeability thin wire, which is separate from the semiconductor configuration, in a layer above the semiconductor configuration, the manufacturing process can be simplified, and the Hall sensor can be provided at low cost.

[0037] In the Hall element array layer, a two-dimensional electron gas layer is provided under the Hall element section. This two-dimensional electron gas layer corresponds to the Hall element section. When the integrated Hall sensor is viewed from directly above, the high permeability thin wire is disposed at a position that does not overlap with the two-dimensional electron gas layer. The high permeability thin wire may also be disposed in a layer above the two-dimensional electron gas layer via the insulating layer 24 or 46. By adopting such a positional relationship, it becomes possible to avoid adverse effects on the Hall voltage measurement.

[0038] Furthermore, the integrated Hall sensor according to this embodiment includes a transverse magnetic field applying magnet (which can be a permanent magnet or an electromagnet) that applies a magnetic field parallel to the Hall element array layer (perpendicular to the longitudinal direction of the high permeability thin wire (short direction)) in addition to the magnetic field (measurement magnetic field) applied perpendicular to the Hall element array layer. In this way, a leakage magnetic field can be generated from the high permeability thin wire, and magnetic particles can be attracted and reliably captured.

[0039] Note that graphene may be used instead of the two-dimensional electron gas layer included in the Hall element array layer. By using graphene, the problem of non-uniformity of the two-dimensional electron gas layer can be solved, and the Hall voltage can be measured accurately.

[0040] The integrated Hall sensor according to the first and third embodiments has a MOS transistor structure. Each of the multiple Hall element units is connected to a MOS transistor. Then, by turning on the gate of the MOS transistor connected to the desired Hall element unit for detecting the Hall voltage, the voltage generated by the magnetic material captured in the desired Hall element unit is selectively detected. This makes it possible to measure the amount of magnetic material particles (leaking magnetic field) that can be captured by a specific Hall element unit.

[0041] In the first and third embodiments, a plurality of rows of the Hall element units are arranged (see Figs. 1 and 6). The high permeability thin wire is arranged between each row of the Hall element units so that its longitudinal direction (long axis direction) is parallel to the arrangement direction of the Hall element units. In this way, it becomes possible to efficiently capture magnetic particles in each of the two-dimensionally arranged Hall element units without adversely affecting the Hall voltage measurement. In addition, since the multiple Hall element units are arranged two-dimensionally (in a matrix), it is possible to select a specific Hall element unit by a combination of vertical and horizontal (rows and columns) and measure the Hall voltage of the magnetic particles captured there. [Explanation of symbols]

[0042] 1, 4, 6 Sensor chip 10, 40 Semiconductor substrate 11, 41 Hall element section 12, 42 Two-dimensional electron gas layer 13, 43 High permeability thin wire 14 Gate wiring 15, 44 Output terminals 16, 45 Ground wiring 17, 47 Magnet for applying transverse magnetic field 21 Source 22 Gate 23 p-well 24, 25, 26, 46 Insulating layer 31 Sense Amplifier 32 Input Current Selector 33 Gate Selector 34 Hall element 35 Input current terminal

Claims

1. a Hall element array layer including a plurality of Hall element portions that capture magnetic particles; a high-permeability thin wire adjacent to the plurality of Hall element units and generating a magnetic field for capturing a magnetic body to be detected above the plurality of Hall element units; An integrated Hall sensor comprising:

2. In claim 1, The high magnetic permeability thin wire is disposed in a layer above a Hall element array layer, in this integrated Hall sensor.

3. In claim 1, Further, a two-dimensional electron gas layer is provided below the plurality of Hall element units and at a position corresponding to the plurality of Hall element units, An integrated Hall sensor, wherein the high permeability thin wire is disposed at a position not overlapping with the two-dimensional electron gas layer when the integrated Hall sensor is viewed from directly above.

4. In claim 3, An integrated Hall sensor, wherein the high permeability thin wire is disposed in a layer above the two-dimensional electron gas layer, with an insulating layer interposed therebetween.

5. In claim 1, An integrated Hall sensor that captures the magnetic body at a location near the high magnetic permeability thin wire in the plurality of Hall element portions.

6. In claim 1, The integrated Hall sensor further includes a transverse magnetic field applying magnet that applies a magnetic field parallel to the Hall element array layer, in addition to the magnetic field that is applied perpendicular to the Hall element array layer.

7. In claim 1, The high-permeability thin wire is an integrated Hall sensor that contains soft magnetic material as a constituent material.

8. In claim 1, Further, the graphene is provided at a position corresponding to the plurality of Hall element units and is located below the plurality of Hall element units, An integrated Hall sensor, wherein the high permeability thin wire is arranged in a position not overlapping with the graphene when the integrated Hall sensor is viewed from directly above.

9. In claim 1, Further, the semiconductor device has a MOS transistor structure, An integrated Hall sensor configured to selectively detect a voltage generated by a magnetic body captured in a desired Hall element portion by turning on a gate of a MOS transistor connected to the desired Hall element portion.

10. In claim 9, The high magnetic permeability thin wire is disposed in a layer above a layer in which the MOS transistor structure is provided, in the integrated Hall sensor.

11. In claim 1, The high-permeability thin wire is magnetized in a longitudinal direction of the high-permeability thin wire, in the integrated Hall sensor.

12. In claim 1, the plurality of Hall element portions in the Hall element array layer are arranged in a line in a predetermined direction, A plurality of rows of the hall element portions are provided, An integrated Hall sensor, wherein the high-permeability thin wire is arranged between each of the rows of the plurality of Hall element units so that the longitudinal direction of the high-permeability thin wire is parallel to the direction of the rows of the plurality of Hall element units.

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