Electrostatic chuck system, film deposition apparatus, adsorption method, film deposition method and method for manufacturing electronic device

Abstract

To provide an electrostatic chuck system capable of determining the degree of adsorption between an electrostatic chuck and an object to be adsorbed by photographing the object to be adsorbed through a notch part provided in the electrostatic chuck.SOLUTION: An electrostatic chuck system includes: an electrostatic chuck for adsorbing an object to be adsorbed and having at least one notch part penetrating from an adsorption surface adsorbing the object to be adsorbed to a surface on the opposite side; photography means capable of photographing the object to be adsorbed through the notch part; and determination means for determining the degree of adsorption between the electrostatic chuck and the object to be adsorbed on the basis of the image of the object to be adsorbed photographed by the photography means.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to an electrostatic chuck system, a film forming apparatus, a chucking method, a film forming method, and a method for manufacturing an electronic device. [Background technology]

[0002] In the manufacture of organic EL display devices (organic EL displays), when forming the organic light-emitting elements (organic EL elements; OLEDs) that make up the organic EL display device, deposition materials evaporated from a deposition source in a film-forming device are deposited on a substrate through a mask on which a pixel pattern is formed, thereby forming an organic layer and a metal layer.

[0003] In a deposition apparatus using the upward deposition method (deposit up), the deposition source is provided at the bottom of the vacuum chamber of the deposition apparatus, the substrate is placed at the top of the vacuum chamber, and deposition is performed on the bottom surface of the substrate. In the vacuum chamber of such an upward deposition apparatus, the substrate is held by the substrate holder only at the periphery of its bottom surface, so the substrate bends due to its own weight, which is one of the factors that reduces deposition accuracy. In deposition apparatuses using methods other than the upward deposition method, the substrate may also bend due to its own weight.

[0004] As a method for reducing the deflection of the substrate due to its own weight, the entire upper surface of the substrate can be attracted by an electrostatic chuck, thereby reducing the deflection of the substrate. Patent Document 1 describes a technology in which, in an electrostatic chuck system that attracts a substrate and a mask with an electrostatic chuck, the electrostatic chuck is provided with an alignment cutout portion for photographing an alignment mark of the substrate or mask, and a cutout portion for determining the degree of attraction between the substrate and the electrostatic chuck, and the alignment and degree of attraction are determined by photographing with a camera through the cutout portion. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2020-070488 A Summary of the Invention [Problem to be solved by the invention]

[0006] In the technology of Patent Document 1, the electrostatic chuck is provided with separate cutouts for alignment and for determining the degree of attraction, but from the viewpoint of suppressing a decrease in the attraction force, it is preferable to provide fewer cutouts in the electrostatic chuck. Furthermore, Patent Document 1 does not disclose a specific method for determining the degree of attraction.

[0007] The present invention provides an electrostatic chuck system capable of determining the degree of attraction between the electrostatic chuck and an object to be attracted by photographing the object to be attracted through a notch provided in the electrostatic chuck. [Means for solving the problem]

[0008] The present invention provides an electrostatic chuck for attracting an object to be attracted, the electrostatic chuck having at least one notch extending from an attracting surface that attracts the object to an opposite surface thereof; an imaging means capable of imaging the adherend through the notch; a determination unit that determines a degree of attraction between the electrostatic chuck and the object to be attracted based on the image of the object to be attracted taken by the imaging unit; and The electrostatic chuck system is characterized by having: Effect of the Invention

[0009] According to the present invention, it is possible to provide an electrostatic chuck system capable of determining the degree of adhesion between the electrostatic chuck and an object to be attracted by photographing the object to be attracted through a cutout portion provided in the electrostatic chuck. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a diagram showing an electronic device manufacturing apparatus according to an embodiment of the present invention. [Diagram 2]FIG. 2 is a diagram showing a film forming apparatus according to an embodiment of the present invention. [Diagram 3] 1 is a block diagram of an electrostatic chuck system according to an embodiment, and a cross-sectional view and a plan view of an electrostatic chuck. FIG. [Figure 4] FIG. 2 is a plan view of the electrostatic chuck of the embodiment. [Diagram 5] FIG. 2 is a schematic diagram of an image of an alignment mark according to an embodiment of the present invention. [Figure 6] 1 is a flowchart showing a flow of a film forming process according to an embodiment. [Figure 7] FIG. 1 illustrates an electronic device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Preferred embodiments and examples of the present invention will be described below with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description are not intended to limit the scope of the present invention to only those unless otherwise specified.

[0012] The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be desirably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. The substrate material can be any material such as glass, a polymeric film, or metal, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. The deposition material can be any material such as an organic material or a metallic material (metal, metal oxide, etc.). In addition to the vacuum deposition apparatus described below, the present invention can also be applied to a deposition apparatus having a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention can be applied to an apparatus for manufacturing an organic electronic device (for example, an organic EL element, a thin-film solar cell), an optical member, etc. Among them, an apparatus for manufacturing an organic EL element in which an organic EL element is formed by evaporating a deposition material and depositing it on a substrate through a mask is one of the preferred application examples of the present invention.

[0013] <Electronic device manufacturing equipment> FIG. 1 is a plan view that illustrates a schematic configuration of a portion of an electronic device manufacturing apparatus.

[0014] 1 is used, for example, to manufacture a display panel of an organic EL display device for a smartphone. An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and relay apparatuses that connect the cluster apparatuses 1 to each other.

[0015] The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform processing (e.g., film formation) on a substrate S, a plurality of mask stock apparatuses 12 that store masks M before and after use, and a transfer chamber 13 disposed in the center thereof. The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12, as shown in FIG.

[0016] A transfer robot 14 for transferring the substrate S and the mask M is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from a pass chamber 15 of a relay device arranged upstream to the film forming device 11. The transfer robot 14 also transfers a mask M between the film forming device 11 and the mask stock device 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding the substrate S or mask M is attached to an articulated arm.

[0017] In the film forming apparatus 11 (also called a vapor deposition apparatus), a vapor deposition material stored in a vapor deposition source is heated by a heater to evaporate, and is vapor deposited on the substrate S through the mask M. A series of film forming processes, such as delivery of the substrate S to or from the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing the substrate S on the mask M, and film formation (vapor deposition), are performed by the film forming apparatus 11.

[0018] In the mask stock device 12, new masks M to be used in the film formation process in the film formation device 11 and used masks M are stored in two cassettes. The transfer robot 14 transfers the used mask M from the film formation device 11 to a cassette in the mask stock device 12, and transfers the new mask M stored in the other cassette in the mask stock device 12 to the film formation device 11.

[0019] The cluster apparatus 1 is connected to a pass chamber 15 for transferring the substrate S from the upstream side in the transfer direction of the substrate S to the cluster apparatus 1, and a buffer chamber 16 for transferring the substrate S after the film formation process in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film formation apparatuses 11 in the cluster apparatus 1 (for example, film formation apparatus 11a). The transfer robot 14 also receives the substrate S after the film formation process in the cluster apparatus 1 from one of the film formation apparatuses 11 (for example, film formation apparatus 11b) and transfers it to the buffer chamber 16 connected to the downstream side.

[0020] A turning chamber 17 for changing the orientation of the substrate S is provided between the buffer chamber 16 and the pass chamber 15. A transfer robot 18 is provided in the turning chamber 17 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180°, and transferring the substrate S to the pass chamber 15. This ensures that the orientation of the substrate S is the same in the upstream cluster apparatus 1 and the downstream cluster apparatus 1, facilitating substrate processing.

[0021] The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices 1, and the relay device installed upstream and / or downstream of the cluster device 1 has at least one of the pass chamber 15, the buffer chamber 16, and the swirl chamber 17.

[0022] The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic EL element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

[0023] The configuration of the electronic device manufacturing apparatus to which the present invention can be applied is not limited to the above configuration, and other types of apparatuses and chambers may be included, and the arrangement of these apparatuses and chambers may be changed. The specific configuration of the film forming apparatus 11 will be described below.

[0024] <Film forming equipment> 2 is a schematic diagram showing the configuration of a film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system is used in which the vertical direction is the Z direction. When the substrate S is fixed so as to be parallel to a horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (direction parallel to the long side) is the Y direction. The rotation angle around the Z axis is represented by θ.

[0025] The film forming apparatus 11 is a vacuum chamber in which a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas is maintained. The vacuum chamber 21 includes a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a deposition source 25, which are provided inside the vacuum chamber 21.

[0026] The substrate supporting unit 22 is a means for receiving and holding the substrate S transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a substrate holder.

[0027] A mask supporting unit 23 is provided below the substrate supporting unit 22. The mask supporting unit 23 is a means for receiving and holding the mask M transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

[0028] The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask supporting unit 23. For example, a mask used to manufacture organic EL elements for smartphones is a metal mask with a fine opening pattern formed therein, and is also called an FMM (Fine Metal Mask).

[0029] An electrostatic chuck 24 is provided above the substrate support unit 22 to attract and fix the substrate S and / or mask M by electrostatic attraction. The electrostatic chuck 24 attracts and holds the substrate S (first attractor) before film formation. Thereafter, film formation is performed with the substrate S (first attractor) and the mask M (second attractor) held by the electrostatic chuck 24, and after film formation is completed, the holding of the substrate S (first attractor) and the mask M (second attractor) by the electrostatic chuck 24 is released.

[0030] The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnsen-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. When the electrostatic chuck 24 is a gradient force type electrostatic chuck, even if the substrate S is an insulating substrate, it can be satisfactorily attracted by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive and negative voltages are applied to the metal electrodes, a polarized charge of the opposite polarity to that of the metal electrodes is induced in the object to be attracted such as the substrate S through the dielectric matrix, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction between them.

[0031] The electrostatic chuck 24 may be formed of one plate or may be formed to have multiple sub-plates. Even if it is formed of one plate, it may have multiple electric circuits therein and control the electrostatic attractive force to be different depending on the position within the single plate.

[0032] The electrostatic chuck 24 has one or more through holes H, which are notches, formed to penetrate the plate. One through hole H can serve both as a through hole for alignment, which enables an image of an alignment mark formed on the substrate S or the mask M to be captured through the electrostatic chuck 24, and as a through hole for determining the degree of adhesion (degree of contact) between the electrostatic chuck 24 and the substrate S or between the substrate S and the mask M. Although the through hole for alignment and the through hole for determining adhesion may be provided separately, a configuration in which both alignment and adhesion determination can be performed with one through hole allows the number of holes provided in the electrostatic chuck 24 to be reduced, and therefore a decrease in the adhesion force caused by providing the holes can be suppressed.

[0033] The through holes H are provided, for example, at four diagonal corners and at the center of the rectangular electrostatic chuck plate. Note that the positions and number of the through holes H are merely examples, and the present invention is not limited to the above example. For example, the through holes H may be provided at two corners instead of the four diagonal corners. A through hole H may be provided in the cutout portion. An additional through hole H may be provided in the center of a pair of opposing sides (e.g., short sides). The through hole H may be formed by performing a cutout process on a member that does not have a through hole later, or may be provided by forming a member so that it has a through hole from the beginning. The cutout portion may have any shape as long as it penetrates from the adsorption surface that adsorbs the adsorbed object to the opposite surface and allows the adsorbed object to be photographed by a camera through the cutout.

[0034] Although not shown in FIG. 2, a cooling mechanism (e.g., a cooling plate) for suppressing an increase in temperature of the substrate S may be provided on the side opposite the adsorption surface of the electrostatic chuck 24, thereby suppressing alteration or deterioration of the organic material deposited on the substrate S.

[0035] The deposition source 25 includes a crucible (not shown) for storing the deposition material to be formed into a film on the substrate S, a heater (not shown) for heating the crucible, and a shutter (not shown) for preventing the deposition material from scattering onto the substrate S until the evaporation rate from the deposition source 25 becomes constant. The deposition source 25 can have various configurations according to the application, such as a point deposition source or a linear deposition source.

[0036] Although not shown in FIG. 2, the film forming apparatus 11 has a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate S, and a film thickness calculation unit (not shown).

[0037] A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, etc. are provided on the upper outside (atmosphere side) of the vacuum vessel 21. These actuators 26, 27, 28 and the position adjustment mechanism 29 are composed of, for example, a motor and a ball screw, or a motor and a linear guide, etc. The substrate Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the substrate support unit 22. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

[0038] The position adjustment mechanism 29 is a driving means for aligning the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, the Y direction, and rotates it by θ relative to the substrate support unit 22 and the mask support unit 23. Note that, by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is attracted to the electrostatic chuck 24, alignment is performed to adjust the relative positions of the substrate S and the mask M.

[0039] In addition to the driving means and position adjustment mechanism described above, a camera 20 is provided on the outer upper surface of the vacuum vessel 21 for photographing alignment marks formed on the substrate S and mask M through a transparent window provided on the upper surface of the vacuum vessel 21 and a hole provided in the electrostatic chuck 24. The camera 20 is provided at a position corresponding to a through hole H provided in the electrostatic chuck 24, that is, at a position corresponding to the four corners and the center of the electrostatic chuck 24.

[0040] The camera 20 is a camera capable of performing fine alignment to adjust the relative positions of the substrate S and the mask M with high accuracy, and has a narrow viewing angle but high resolution. Note that the film forming apparatus 11 may have a rough alignment camera with a relatively wide viewing angle and low resolution in addition to the fine alignment camera 20, and align the substrate S and the mask M by combining rough alignment using the rough alignment camera and fine alignment using the fine alignment camera.

[0041] The control unit 40 analyzes the images of the alignment marks of the substrate S (first object to be attracted) and the mask M (second object to be attracted) captured by the camera 20, and thereby determines the positions of the substrate S and the mask M. The control unit 40 acquires information on the position of the substrate S and the mask M. The control unit 40 controls the position adjustment mechanism 29 based on the position information of the substrate S and the mask M to perform alignment by relatively moving the substrate S (first object to be attracted) and the mask M (second object to be attracted) to adjust their positions. The control unit 40 also analyzes an image of the substrate S captured by the camera 20 to determine the degree of attraction between the substrate S and the electrostatic chuck 24. The control unit 40 adjusts the attraction force of the electrostatic chuck 24 as necessary based on the degree of attraction.

[0042] The control unit 40 has functions of transporting and aligning the substrate S, controlling the deposition source 25, controlling film formation, etc. The control unit 40 also has a function of controlling the application of voltage to the electrostatic chuck 24, that is, a function of a voltage control unit 32 in Fig. 3(a) described later.

[0043] The control unit 40 can be configured, for example, by a computer having a processor, memory, storage, I / O, etc. In this case, the functions of the control unit 40 are realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (Programmable Logic Controller) may be used. Alternatively, some or all of the functions of the control unit 40 may be configured by a circuit such as an ASIC or FPGA. In addition, a control unit 40 may be installed for each film forming apparatus 11, or one control unit 40 may be configured to control multiple film forming apparatuses 11.

[0044] <Electrostatic chuck system and chucking method> The electrostatic chuck system 30 and the chucking method will be described with reference to Figures 3(a), 3(b), and 4. Figure 3(a) is a block diagram of the electrostatic chuck system 30 and a cross-sectional view of the electrostatic chuck 24, and Figure 3(b) is a plan view of the electrostatic chuck 24. Also, Figure 4 is a plan view for explaining the configuration of the electrostatic chuck 24.

[0045] 3(a), the electrostatic chuck system 30 includes the electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32. The voltage application unit 31 applies a voltage to the sub-electrode units 241 to 249 of the electrostatic chuck 24 to generate an electrostatic attractive force.

[0046] The voltage control unit 32 controls the magnitude of the voltage applied from the voltage application unit 31 to the electrode unit 240a, the start time of the voltage application, the duration of the voltage application, the order of the voltage application, etc., in accordance with the progress of the adsorption process of the electrostatic chuck system 30 or the film formation process of the film formation apparatus 11. The voltage control unit 32 can, for example, independently control the voltage application to the multiple sub-electrode units 241 to 249 included in the electrode unit 240a of the electrostatic chuck 24 for each sub-electrode unit. The voltage control unit 32 is configured separately from the control unit 40 of the film formation apparatus 11, but may be integrated into the control unit 40 of the film formation apparatus 11.

[0047] The electrostatic chuck 24 has an electrostatic chuck plate portion 240 having a structure in which an electric circuit such as a metal electrode is embedded in a matrix of a dielectric material (e.g., a ceramic material). The electrostatic chuck plate portion 240 has an electrode portion 240a and a dielectric portion 240b. The electrode portion 240a generates an adsorption force for adsorbing an object to be adsorbed (e.g., a substrate S, a mask M) on the adsorption surface by applying a voltage from a voltage application unit 31. The dielectric portion 240b is formed of one or more dielectric materials and is interposed at least between the electrode portion 240a and the adsorption surface. The electrostatic chuck plate portion 240 has a shape corresponding to the shape of the substrate S, for example, a rectangular shape.

[0048] The electrostatic chuck plate portion 240 is formed with one or more through holes H, which are cutout portions, penetrating vertically. No electrode portion is formed in the portion where the through holes H penetrate. The through holes H may be empty space that is not filled with anything, or may be filled with a transparent insulating material. As shown in FIG. 4, the through holes H are provided at the four corner portions and the center portion of the electrostatic chuck 24. Note that the locations where the through holes H are provided are merely examples, and the locations where the substrate S and the mass The position is set according to the position of an alignment mark provided on the electrostatic chuck M and the position at which the adhesion strength between the substrate S and the electrostatic chuck 24 is to be determined.

[0049] As shown in Fig. 3(a) and Fig. 3(b), the electrode unit 240a has a plurality of sub-electrode units 241-249. Specifically, the electrode unit 240a has a plurality of sub-electrode units 241-249 divided along the longitudinal direction (Y direction) and lateral direction (X direction) of the electrostatic chuck plate unit 240. Fig. 3(b) shows an example in which the electrode density of the plurality of sub-electrode units 241-249 is uniform, but the electrode density may be set for each sub-electrode unit as necessary. For example, the electrode density may be different between the sub-electrode unit corresponding to the region where the through hole H is provided and the sub-electrode unit corresponding to the region where the through hole H is not provided.

[0050] Each of the sub-electrode portions 241 to 249 has an electrode pair 33 to which a positive (first polarity) and a negative (second polarity) potential are applied in order to generate an electrostatic adsorption force. For example, each electrode pair 33 has a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

[0051] As shown in FIG. 3(b), the first electrode 331 and the second electrode 332 each have a comb shape. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb teeth and a base connected to the plurality of comb teeth. The base of each of the first electrode 331 and the second electrode 332 supplies a voltage to the comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force between the adsorbed object and the adsorbed object. In one sub-electrode portion, the comb teeth of the first electrode 331 are alternately arranged so as to face the comb teeth of the second electrode 332. In this manner, by configuring the comb teeth of the first electrode 331 and the second electrode 332 to face each other and be intertwined with each other, the interval between the electrodes to which different voltages are applied can be narrowed, a large unequal electric field can be formed, and the substrate S can be adsorbed by a gradient force. Note that the shapes of the first electrode 331 and the second electrode 332 of each of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 are merely examples, and are not limited to the above example. As long as an electrostatic attraction can be generated between the attractor and the object to be attracted, the attractor can have various shapes.

[0052] As shown in FIG. 3(b), the electrostatic chuck 24 has a plurality of chucking parts 141 to 149 corresponding to a plurality of sub-electrode parts 241 to 249. The chucking parts 141 to 149 are provided so as to be divided in the longitudinal direction (Y-axis direction) and the lateral direction (X-axis direction) of the electrostatic chuck 24. Note that this configuration of the chucking parts is one example, and is not limited to the above example. For example, the electrostatic chuck 24 may be divided only in the longitudinal direction or the lateral direction. The plurality of chucking parts may be physically configured such that one plate has a plurality of electrode parts, or may be physically configured such that each of a plurality of plates divided into the plurality of plates has one or more electrode parts. Each of the plurality of chucking parts may be configured to correspond to each of the plurality of sub-electrode parts, or one chucking part may be configured to have a plurality of sub-electrode parts.

[0053] For example, by controlling the application of voltage to the sub-electrode portions 241 to 249 by the voltage control portion 32, the three sub-electrode portions 241, 244, and 247 arranged in a direction (Y direction) intersecting with the adsorption proceeding direction (X direction) of the substrate S can be made to form one adsorption portion. That is, the voltage of each of the three sub-electrode portions 241, 244, and 247 can be controlled independently, but by controlling the same voltage to be applied simultaneously to these three sub-electrode portions 241, 244, and 247, these three electrode portions 241, 244, and 247 can function as one adsorption portion. As long as the substrate can be adsorbed independently to each of the multiple adsorption portions, the specific physical structure and electric circuit structure may be changed.

[0054] <Determination of alignment and adsorption degree> Based on an image of the substrate S captured by the camera 20 through the through hole H of the electrostatic chuck 24, The determination of the alignment and the degree of attraction performed by the electrostatic chuck 24 will be described with reference to Fig. 5. Fig. 5 is a schematic diagram showing images captured by the camera 20. Fig. 5(A) shows an image captured in a state where the degree of attraction between the electrostatic chuck 24 and the substrate S is low and the substrate S is deflected. Fig. 5(B) shows an image captured in a state where the degree of attraction between the electrostatic chuck 24 and the substrate S is high and the substrate S is sufficiently in close contact with the electrostatic chuck 24 and is not deflected.

[0055] The image 50 captured by the camera 20 shows a through hole H provided in the electrostatic chuck 24, a first substrate mark 51 which is an alignment mark provided on the substrate S, a mask mark 52 which is an alignment mark provided on a mask M located below the substrate S, and a second substrate mark 53 used to determine the degree of attraction between the substrate S and the electrostatic chuck 24. The control unit 40 performs image analysis on the image 50 captured by the camera 20 to obtain the positional relationship between the first substrate mark 51 and the mask mark 52, and calculates the amount of operation of the position adjustment mechanism 29 required to align the positions of the first substrate mark 51 and the mask mark 52 with the mask mark 52 as a target position. Then, the position adjustment mechanism 29 is driven in the X direction, the Y direction, and the θ direction by the calculated amount of operation.

[0056] Moreover, the control unit 40 detects the second substrate mark 53 by performing image analysis on the image 50 captured by the camera 20, and determines the degree of adhesion between the substrate S and the electrostatic chuck 24 based on the detection result of the second substrate mark 53. Here, when the degree of adhesion between the substrate S and the electrostatic chuck 24 is low and the substrate S is not sufficiently in close contact with the electrostatic chuck 24 in a warped state, the second substrate mark 53 in the image 50 captured by the camera 20 has low brightness and appears as a black image. On the other hand, when the degree of adhesion between the substrate S and the electrostatic chuck 24 is high and the substrate S is in close contact with the electrostatic chuck 24 in an unwarped state, the second substrate mark 53 in the image 50 captured by the camera 20 appears as a white image with high brightness. Therefore, the control unit 40 pre-stores a first model image (sample image) of the second board mark 53 with low luminance, which serves as a criterion for determining that the degree of adhesion of the substrate S is low, and a second model image of the second board mark 53 with high luminance, which serves as a criterion for determining that the degree of adhesion of the substrate S is high, and performs pattern matching on the entire image 50 using the first model image and the second model image, based on the pixel arrangement, luminance, etc. Then, when an image is detected that has a higher matching rate with the first model image than with the second model image, it is determined that the degree of adhesion is low, and when an image is detected that has a higher matching rate with the second model image than with the first model image, it is determined that the degree of adhesion is high.

[0057] The method of determining the degree of adhesion is not limited to the above example. For example, pattern matching may be performed only on the shape, and the degree of adhesion may be determined based on the pixel values ​​of the pixels constituting the detected second substrate mark 53. As a method of determining based on pixel values, for example, the degree of adhesion may be determined based on statistical values ​​(total, average, maximum, minimum, etc.) of the feature quantities (brightness, saturation, chromaticity, etc.) of the pixels constituting the second substrate mark 53. The criteria for the determination may be determined in consideration of the tendency that when the substrate S is in a warped state and is not sufficiently in contact with the electrostatic chuck 24, the image of the second substrate mark 53 becomes darker than when the substrate S is in contact with the electrostatic chuck 24. This is considered to be due to the fact that when the substrate S is not in contact with the electrostatic chuck 24, the substrate S is in a tilted state with respect to the camera 20, so that the reflection direction of the light reflected by the substrate S changes and the amount of light incident on the camera 20 decreases. Therefore, for example, when the image of the second substrate mark 53 is close to white, it can be determined that the degree of adhesion is good, and when it is close to black, it can be determined that the degree of adhesion is not good or that the substrate mark 53 is peeled off.

[0058] When the control unit 40 determines that the degree of adhesion between the substrate S and the electrostatic chuck 24 is low, it adjusts the adhesion force of the electrostatic chuck 24. For example, the adhesion force is increased by increasing the voltage applied to the electrostatic chuck 24. Alternatively, the adhesion may be released once, and the process of attracting the substrate S to the electrostatic chuck 24 may be performed again from the beginning.

[0059] In this way, in this embodiment, the alignment and the degree of adhesion can be determined based on the image 50 obtained by capturing an image with the camera 20 through the through hole H. Therefore, it is not necessary to separately provide a hole for alignment and a hole for determining the degree of adhesion. Therefore, the number of through holes H provided in the electrostatic chuck 24 can be reduced. In addition, since the degree of adhesion can be determined by image analysis, the degree of adhesion can be determined using an apparatus for alignment without adding another apparatus for determining the degree of adhesion to an apparatus for alignment. Note that, in this embodiment, an example in which the first substrate mark 51 for alignment and the second substrate mark 53 for determining the degree of adhesion are provided separately has been described, but the substrate mark for alignment can also be used as the substrate mark for determining the degree of adhesion. In that case, one type of substrate mark may be used.

[0060] In the above description, an example has been described in which whether the degree of adhesion between the substrate S and the electrostatic chuck 24 is good or bad has been determined from the captured image, but whether the substrate S is adsorbed to the electrostatic chuck 24 or detached from the electrostatic chuck 24 can also be determined from the captured image. In this case, a model image serving as a reference for determining whether the substrate S is adsorbed to the electrostatic chuck 24 and a model image serving as a reference for determining whether the substrate S is detached are determined in advance, and the determination can be made based on pattern matching between the second substrate mark in the captured image and the model image. Also, whether the substrate S is adsorbed to the electrostatic chuck 24 or detached can be determined based on the feature amount of the image of the second substrate mark.

[0061] <Film formation process> A film forming method employing the adsorption method according to this embodiment will be described below with reference to the flow chart of FIG.

[0062] In step S1, the control unit 40 controls the transfer robot 14 in the transfer chamber 13 to transfer the substrate S into the vacuum vessel 21 of the film forming apparatus 11, with the mask M supported by the mask supporting unit 23 in the vacuum vessel 21. The hand of the transfer robot 14 that has entered the vacuum vessel 21 is lowered, and the substrate S is placed on the support portion of the substrate supporting unit 22.

[0063] In step S2, the control unit 40 lowers the electrostatic chuck 24 toward the substrate S, and after the electrostatic chuck 24 comes sufficiently close to or into contact with the substrate S, applies a predetermined voltage to the electrostatic chuck 24 to attract the substrate S.

[0064] In step S3, the control unit 40 measures the degree of attraction to determine whether the substrate S is well attracted to the electrostatic chuck 24. The camera 20 captures an image of the substrate S through the through hole H, and the control unit 40 analyzes the obtained image data to measure the degree of attraction of the substrate S to the electrostatic chuck 24.

[0065] In step S4, the control unit 40 determines whether the degree of adhesion of the substrate S to the electrostatic chuck 24 is high. Specifically, as described above, the determination is made based on whether the image of the second substrate mark 53 matches the first model image or the second model image. When the degree of adhesion is measured as a pixel value such as brightness or saturation, it is possible to determine whether the degree of adhesion is high by comparing the degree of adhesion with a predetermined target value. If the degree of adhesion is determined to be low, the process proceeds to step S5, and if the degree of adhesion is determined to be high, the process proceeds to step S6.

[0066] In step S5, the control unit 40 adjusts the adsorptive force of the electrostatic chuck 24. Specifically, the adsorptive force is increased by increasing the voltage applied to the electrostatic chuck 24. Thereafter, the determination of the adsorption degree in step S4 is performed again.

[0067] In step S6, the control unit 40 measures the relative positional deviation of the substrate S with respect to the mask M in a state in which the substrate S is attracted to the electrostatic chuck 24. 24 is lowered, and the substrate S attracted to the electrostatic chuck 24 is brought closer to the mask M. When the substrate S is lowered to the measurement position, the control unit 40 photographs the alignment marks formed on the substrate S and the mask M through the through hole H with the camera 20, and measures the relative positional deviation between the substrate S and the mask M.

[0068] In step S7, the control unit 40 determines whether the relative positional deviation of the substrate S with respect to the mask M is equal to or smaller than a threshold value. If the positional deviation is greater than the threshold value, the process proceeds to step S8, and if the positional deviation is equal to or smaller than the threshold value, the process proceeds to step S9.

[0069] In step S8, the control unit 40 controls the position adjustment mechanism 29 to move the substrate S attracted to the electrostatic chuck 24 in the horizontal direction (XYθ direction) to adjust (align) the position of the substrate S with respect to the mask M. Thereafter, the positional deviation determination in step S7 is performed again.

[0070] In step S9, the control unit 40 applies a predetermined voltage to the electrode portion or sub-electrode portion of the electrostatic chuck 24 to attract the mask M to the electrostatic chuck 24 through the substrate S.

[0071] In step S10, the control unit 40 opens the shutter of the deposition source 25 and deposits the deposition material on the substrate S through the mask M. After deposition to a desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is reduced to separate the mask M, and the electrostatic chuck 24 is raised by the electrostatic chuck Z actuator 28 in a state in which only the substrate S is adsorbed to the electrostatic chuck 24. Next, the hand of the transfer robot 14 enters the vacuum vessel 21 of the film forming apparatus 11, and a voltage of zero (0) or reverse polarity is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24, and the substrate S is separated from the electrostatic chuck 24. Thereafter, the substrate S on which deposition has been completed is carried out of the vacuum vessel 21 by the transfer robot 14.

[0072] In the above description, the film forming apparatus 11 is configured in a so-called upward deposition type (depo-up) configuration in which film formation is performed with the film forming surface of the substrate S facing vertically downward, but this is not limited to this configuration. The substrate S may be arranged vertically on the side of the vacuum vessel 21, and film formation may be performed with the film forming surface of the substrate S parallel to the direction of gravity.

[0073] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described below. As an example of the electronic device, the configuration of an organic EL display device and a method for manufacturing the same will be described.

[0074] First, the organic EL display device to be manufactured will be described. FIG. 7(a) is a general view of an organic EL display device 60, and FIG. 7(b) shows a cross-sectional structure of one pixel. As shown in FIG. 7(a), a plurality of pixels 62 each having a plurality of light-emitting elements are arranged in a matrix in a display area 61 of the organic EL display device 60. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel referred to here refers to the minimum unit that allows a desired color to be displayed in the display area 61. In this embodiment, in the case of an organic EL display device, the pixel 62 is configured by a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that emit light different from each other. The pixel 62 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0075] Fig. 7(b) is a schematic partial cross-sectional view taken along the line AB in Fig. 7(a). A pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, one of the light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. , the hole transport layer 65, the light-emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. The anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. In order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter, an insulating layer 69 is provided between the anodes 64. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 70 is provided to protect the organic EL elements from moisture and oxygen.

[0076] 7(b), the hole transport layer 65 and the electron transport layer 67 are shown as a single layer, but may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the anode 64 to the hole transport layer 65 can be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

[0077] Next, an example of a manufacturing method for an organic EL display device will be specifically described. First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and an anode 64 are formed is prepared. An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the anode 64 is formed, thereby forming an insulating layer 69. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0078] The substrate 63 on which the insulating layer 69 has been patterned is carried into a first organic material film forming apparatus, and the substrate is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer on the anodes 64 in the display area. The hole transport layer 65 is formed by vacuum deposition. In practice, the hole transport layer 65 is formed to be larger than the display area 61, so no high-resolution mask is required.

[0079] Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into a second organic material film forming apparatus and held by an electrostatic chuck. The substrate and a mask are aligned, and the mask is held over the substrate by the electrostatic chuck. A red light emitting layer 66R is formed on the portion of the substrate 63 where the red light emitting element is to be disposed.

[0080] Similar to the formation of the light-emitting layer 66R, a light-emitting layer 66G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 66B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, an electron transport layer 67 is formed over the entire display area 61 by a fifth film formation apparatus. The electron transport layer 67 is formed as a layer common to the three light-emitting layers 66R, 66G, and 66B.

[0081] The substrate on which the electron transport layer 67 has been formed is moved in a metallic vapor deposition material deposition apparatus, where the cathode 68 is deposited. The substrate is then moved to a plasma CVD apparatus, where the protective layer 70 is deposited, completing the organic EL display device 60. If the substrate 63 on which the insulating layer 69 has been patterned is exposed to an atmosphere containing moisture or oxygen after being carried into the deposition apparatus until the deposition of the protective layer 70 is completed, the light-emitting layer made of the organic EL material may be deteriorated by the moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the deposition apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0082] The above embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above embodiment. Appropriate modifications may be made within the scope of the technical concept. [Explanation of symbols]

[0083] 20: camera, 24: electrostatic chuck, 30: electrostatic chuck system, 40: control unit, H: through hole

Claims

1. An electrostatic chuck for adsorbing an object to be adsorbed, wherein the electrostatic chuck is provided with at least one notch that penetrates from the adsorption surface that adsorbs the object to the opposite surface, A photographic means capable of photographing the object to be attached through the notch, A determination means for determining the degree of adsorption between the electrostatic chuck and the object to be adsorbed, based on the image of the object to be adsorbed captured by the aforementioned imaging means, An electrostatic chuck system characterized by having the following features.

2. The electrostatic chuck system according to claim 1, wherein the determination of the degree of adsorption by the determination means is a determination of whether or not the adsorption of the object to be adsorbed to the electrostatic chuck is good.

3. The electrostatic chuck system according to claim 1, wherein the determination of the degree of adsorption by the determination means is a determination of whether the object to be adsorbed is adsorbed to the electrostatic chuck or has detached from the electrostatic chuck.

4. The electrostatic chuck system according to any one of claims 1 to 3, wherein the determination means determines the degree of adsorption based on an image of a determination mark provided on the object to be adsorbed.

5. The electrostatic chuck system according to any one of claims 1 to 3, further comprising a control means for controlling the adsorption force of the electrostatic chuck based on the determination of the degree of adsorption.

6. The electrostatic chuck system according to claim 4, wherein the determination means determines the degree of adsorption by pattern matching between an image of a determination mark provided on the object to be adsorbed and a predetermined model image.

7. The electrostatic chuck system according to claim 4, wherein the determination means determines the degree of adsorption based on the characteristic quantities of the image of a determination mark provided on the object to be adsorbed.

8. The electrostatic chuck system according to claim 7, wherein the feature quantity is at least one of chromaticity, brightness, and saturation.

9. The electrostatic chuck system according to any one of claims 1 to 3, wherein the notch is a through hole that penetrates the electrostatic chuck.

10. The electrostatic chuck system according to any one of claims 1 to 3, characterized in that the notch is provided at the corner of the rectangular electrostatic chuck.

11. The electrostatic chuck system according to any one of claims 1 to 3, characterized in that the notch is provided in the central part of the electrostatic chuck.

12. The electrostatic chuck system according to any one of claims 1 to 3, wherein the object to be adsorbed is a substrate.

13. Having the electrostatic chuck system described in claim 12, A film deposition apparatus for depositing a film onto the aforementioned substrate via a mask.

14. A method for adsorbing an object to be adsorbed onto an electrostatic chuck, The electrostatic chuck is provided with at least one notch that penetrates from the adsorption surface that adsorbs the object to be adsorbed to the opposite surface, A step of photographing the object to be attached through the notch using a photographic means, An adsorption method characterized by comprising the step of determining the degree of adsorption between the electrostatic chuck and the object to be adsorbed based on an image of the object to be adsorbed taken in the aforementioned imaging step.

15. A film deposition method for depositing a deposition material onto a substrate via a mask, The process of loading the mask into the vacuum container, The process of loading a substrate into the vacuum container, A step of attaching the substrate to an electrostatic chuck having at least one notch that penetrates from the adsorption surface that adsorbs the substrate to the opposite surface, A step of photographing the substrate through the notch using a photographing means, A step of determining the degree of adsorption between the electrostatic chuck and the substrate based on the image of the substrate captured in the aforementioned imaging step, A step of adsorbing the mask onto the electrostatic chuck via the substrate, With the substrate and the mask adsorbed to the electrostatic chuck, the vapor deposition material is released to form a film of the vapor deposition material on the substrate via the mask. A method for forming a film, characterized by having the following features.

16. A method for manufacturing an electronic device, characterized by manufacturing an electronic device using the film formation method of claim 15.

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