Semiconductor storage device

Abstract

To provide a semiconductor storage device capable of being suitably manufactured.SOLUTION: A semiconductor storage device comprises: a plurality of conductive layers (110) laminated in a lamination direction (Z); a semiconductor pillar (120) facing the plurality of conductive layers; a gate insulation film (130) provided between the plurality of conductive layers and the semiconductor pillar and including a charge storage film; a semiconductor member (126) connected to the semiconductor pillar; a contact electrode (Ch) connected to the semiconductor member; a first insulation member (SHE) for segmenting some conductive layers (SGD and SGDT) in a first direction (Y); and a second insulation member (151) provided inside the first insulation member. The contact electrode comprises a first conductive region (RCh1) provided on the opposite side of the semiconductor pillar in the lamination direction with respect to a surface of the contact electrode side of the semiconductor member in the lamination direction, and a second conductive region (RCh2) provided on the semiconductor pillar side in the lamination direction with respect to the surface of the semiconductor member between the semiconductor member and the second insulation member and in contact with the second insulation member.SELECTED DRAWING: Figure 6

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