Exposure vibration / identification method of msd

Abstract

To aim to heighten manufacturability in transfer / lithography technology of a device and a circuit pattern in the production of semiconductor devices.SOLUTION: In semiconductor device patterning lithography and projection exposure, a method for quantitatively identifying vibrations is presented using a test pattern that simultaneously has dense shapes and isolated shapes on the test mask pattern. The exposure dose is varied while sequentially imprinting on a test wafer. By determining the ratio of the exposure amount at which the patterns of the dense lines and isolated lines disappear, it becomes possible to provide a method for quantitatively identifying MSD and thus the amount of vibration. For absolute value calibration, compensation is performed by mutually comparing existing mechanical methods and simulations.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] Techniques for transferring device and circuit patterns and photolithography in semiconductor device manufacturing.

Prior Art Documents

Patent Documents

[0002] No search was conducted; nothing in particular.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In semiconductor device manufacturing techniques for transferring device and circuit patterns and photolithography, the aim is to improve the ease of manufacturing. Specifically, by providing a method for quantitatively identifying vibrations in the entire exposure machine, it helps analyze the vibration factors of the exposure machine and leads to reducing the vibration factors that cause a sudden deterioration in the transferred image quality, thereby contributing to the stable production of semiconductor devices.

Means for Solving the Problems

[0004] In photolithography projection exposure for semiconductor element patterning, as a method for quantitatively identifying vibrations, a test pattern having both a dense shape and an isolated shape in a test mask pattern is used, and exposure is sequentially performed on a test wafer while changing the exposure dose. At this time, if the dimensions of the test pattern have appropriate values, not only in scan synchronous exposure but also in static exposure, depending on the MSD (amount of deviation from the moving average) corresponding to the vibration amount, a difference occurs in the speed of disappearance of the patterns of dense lines and isolated lines on the side with a lower exposure dose. Therefore, by obtaining the ratio of the pattern disappearance exposure doses for dense lines and isolated lines, it becomes possible to provide a method for quantitatively identifying the MSD and thus the vibration amount. However, this method also includes the acid diffusion length in chemically amplified resists in the calculation.

Effects of the Invention

[0005] By providing a method for quantitatively identifying vibrations in exposure machines, we can assist in the analysis of exposure machine vibration factors and reduce vibration factors that cause rapid degradation of transferred image quality. This will ultimately contribute to the stable production of semiconductor devices. [Brief explanation of the drawing]

[0006] [Figure 1] Examples of test mask patterns to use [Figure 2] Image calculation example including MSD [Figure 3] Image simulation for small MSD, example of light intensity distribution and contrast calculation. [Figure 4] Image simulation with moderate MSD, example of light intensity distribution and contrast calculation. [Figure 5] Imaging simulation with a large MSD, and an example of light intensity distribution and contrast calculation. [Figure 6] An example of increased pattern loss exposure ratio due to vibration and MSD deterioration. [Industrial applicability]

[0007] Because it can be implemented within the range of functions of typical current exposure machines, once a test mask pattern is created, it can be immediately deployed to exposure machine manufacturing sites and semiconductor device manufacturing sites.

Claims

1. A method for quantitatively identifying the vibration of an exposure machine. A test pattern that has both dense and isolated shapes in the test mask pattern is used, and the patterns are printed onto a test wafer in sequence while changing the exposure dose, and the MSD is quantitatively identified by determining the pattern disappearance exposure dose ratio.

2. 2. The method according to claim 1, wherein the measurement accuracy is improved by performing mutual compensation between the imaging simulation and the actual measurement while trying various patterns for the dense and isolated shapes of the test pattern.