Improved iii-nitride substrate, method of making the same, and method of using the same
Through the combined processing technology of free three-dimensional gallium boride crystals and the use of a modem mask layer, the problem of high defect density of large-area gallium boride matrix is solved, and low-cost, high-efficiency low-defect density growth is achieved.
JP2025060653AActive Publication Date: 2025-04-10SLT TECH
Patent Information
- Application Number
- JP2024214419
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2020-05-22
- Filing Date
- 2024-12-09
- Publication Date
- 2025-04-10
- Estimated Expiration
- 2040-05-22
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Figure 2025060653000001_ABST
Abstract
To provide a method for improving a crystal growth process and a semiconductor growth substrate formed thereby having a low defect density.SOLUTION: In a method of processing materials for manufacturing group III metal nitride and gallium based substrates and a method of growing a large area substrate using the combination, the group III metal nitride material 221 pinches off the lower region of the trench and forms a void 225. Many threading dislocations 223 originating from the substrate 101 terminate at the surface of the void 225. Concomitantly, a group III metal nitride layer 213 grows upward through the openings in a patterned mask layer 111. Such bulk or patterned substrates can be used in a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors.SELECTED DRAWING: Figure 3C
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Citation Information
Patent Citations
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