Substrate processing method and substrate processing device

Abstract

To provide a substrate processing method and a substrate processing device that improve productivity.SOLUTION: A substrate processing method includes the steps of: (A) preparing a substrate including an electrode array in which a plurality of electrodes are disposed on a surface of the substrate; (B) forming a light-emitting layer, an electrode layer, and a sealing layer in the entire electrode array; (C) forming a mask with a first thickness on one kind of electrodes of the plurality of electrodes over the sealing layer; and (D) forming a multilayer body in which the one kind of electrodes, the light-emitting layer, the electrode layer, and the sealing layer are stacked by performing an etching process on the substrate using the mask.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a subpixel circuit and a method for forming a subpixel circuit that can be used in displays such as organic light-emitting diode displays. The subpixels are formed by coating an organic EL (Electro Luminescence) layer using an overhang structure formed on an adjacent PDL (Pixel Defining Layer) structure. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent Application Publication No. 2022 / 0077257 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus that improve productivity. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a substrate processing method can be provided, comprising: (A) preparing a substrate having an electrode array in which a plurality of electrodes are arranged on a substrate surface; (B) forming an emitting layer, an electrode layer, and a sealing layer over the entire electrode array; (C) forming a mask having a first thickness on the sealing layer over one type of electrode among the plurality of electrodes; and (D) etching the substrate using the mask to form a laminate in which the one type of electrode, the emitting layer, the electrode layer, and the sealing layer are stacked. Effect of the Invention

[0006] According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus that improve productivity. [Brief description of the drawings]

[0007] [Figure 1] 4 is a flowchart showing an example of a substrate processing method according to the first embodiment. [Diagram 2] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 3] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 4] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 5] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 6] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 7] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 8] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 9] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 10] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 11] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 12] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 13] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 14] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 15] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 16] 11 is another example of a schematic cross-sectional view of the substrate in the step of forming the first laminate. [Figure 17] 10 is a flowchart showing an example of a substrate processing method according to a second embodiment. [Figure 18] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 19] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 20] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 21] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 22] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 23] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 24] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 25] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 26] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 27] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 28] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Figure 29] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 30] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 31] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 32] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 33] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 34] 5A to 5C are schematic cross-sectional views of a substrate in each process; [Diagram 35] 11 is another example of a schematic cross-sectional view of the substrate in the step of forming the first laminate. [Diagram 36] FIG. 2 is a plan view showing an example of a configuration of a first substrate processing system. [Figure 37] FIG. 13 is a plan view showing an example of a configuration of a second substrate processing system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The technique of Patent Document 1 mentioned above has the risk of increasing the number of steps due to the increased number of photolithography processes required to form the overhang structure, and of degradation of the anode electrode due to the effects of moisture and oxygen in the air during wet etching.

[0009] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0010] First Embodiment An example of a substrate processing method for forming a plurality of types of organic EL elements on a substrate will be described with reference to Fig. 1 to Fig. 15. Fig. 1 is a flow chart showing an example of a substrate processing method according to a first embodiment. Fig. 2 to Fig. 15 are examples of schematic cross-sectional views of a substrate in each process.

[0011] Here, a substrate processing method for forming three types of organic EL elements on a substrate is taken as an example. Specifically, a case where an organic EL element that emits red (R), an organic EL element that emits green (G), and an organic EL element that emits blue (B) is formed on a substrate is taken as an example. The organic EL element is composed of an anode electrode, a light-emitting layer, and a cathode electrode laminated together.

[0012] The number of types of organic EL elements formed on the substrate is not limited to three, and may be one type or two or more types.

[0013] In step S101, a substrate is prepared.

[0014] FIG. 2 is an example of a schematic cross-sectional view of the substrate prepared in step S101. The substrate includes a base material 300 and an electrode array 310. The base material 300 is made of, for example, a glass plate. The base material 300 is not limited to this, and may be a ceramic plate, a plastic plate, a metal plate, a silicon plate, or the like, and the material is not limited. The base material 300 may be made of an insulating material. The base material 300 may be made of a light-transmitting material. The shape of the substrate (base material 300) may be rectangular, circular, or the like, and the shape is not limited.

[0015] The electrode array 310 has a plurality of anode electrodes 311, 312, and 313. Here, the electrode array 310 includes a first anode electrode 311, a second anode electrode 312, and a third anode electrode 313. The plurality of anode electrodes 311, 312, and 313 are made of, for example, indium tin oxide (ITO). Note that the plurality of anode electrodes 311, 312, and 313 are not limited to this, and a layer made of silver or aluminum may be added as a base between the base material 300 and the anode electrodes 311, 312, and 313. The plurality of anode electrodes 311, 312, and 313 may be made of a material having electrical conductivity. The plurality of anode electrodes 311, 312, and 313 may be made of a material having translucency. Furthermore, the multiple anode electrodes 311, 312, and 313 are disposed at different positions on the surface of the substrate (base material 300).

[0016] In addition, in step S101, a substrate having the electrode array 310 is prepared, but this is not limited to the above. Step S101 may include a process of forming the electrode array 310 on the substrate (base material 300).

[0017] In step S102, the first light-emitting layer 321 is formed on the substrate. Here, a continuous film of the first light-emitting layer 321 is formed so as to cover the entire electrode array 310. The first light-emitting layer 321 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., red (R)) when a voltage is applied between the electrodes (the first anode electrode 311 and the first cathode electrode 331 described later). The first light-emitting layer 321 is formed by, for example, vacuum deposition or the like.

[0018] In step S103, the first cathode electrode 331 is formed on the substrate. Here, a continuous film of the first cathode electrode 331 is formed on the first light emitting layer 321. The first cathode electrode 331 is made of, for example, ITO, IZO (Indium Zinc Oxide), etc., and a layer made of MgAg may be added as a base between the first light emitting layer 321 and the first cathode electrode 331. In addition, when a cavity structure is provided, MgAg may be used as a cathode electrode material. The formation process of the first cathode electrode 331 is performed by any one of film formation processes such as vacuum deposition, PVD (Physical Vapor Deposition) film formation, CVD (Chemical Vapor Deposition) film formation, ALD (Atomic Layer Deposition) film formation, etc., or a combination thereof.

[0019] In step S104, the first sealing layer 341 is formed on the substrate. Here, a continuous film of the first sealing layer 341 is formed on the first cathode electrode 331. The first sealing layer 341 includes a first inorganic insulating film. The first inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The first sealing layer 341 is formed by, for example, a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The first light emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 are formed in a vacuum atmosphere.

[0020] 3 is an example of a schematic cross-sectional view of the substrate after the process of step S104. A first light-emitting layer 321 is formed on the electrode array 310 (first anode electrode 311, second anode electrode 312, third anode electrode 313). A first cathode electrode 331 is formed on the first light-emitting layer 321. A first sealing layer 341 is formed on the first cathode electrode 331.

[0021] The multiple anode electrodes 311, 312, 313, the first light-emitting layer 321, and the first cathode electrode 331 are sealed by a first sealing layer 341. This prevents the multiple anode electrodes 311, 312, 313, the first light-emitting layer 321, and the first cathode electrode 331 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0022] In step S105, a first mask 351 is formed on the substrate. Here, the first mask 351 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light such as ultraviolet (UV) or deep ultraviolet (DUV) through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the first mask 351 from the photoresist. In the case of a positive photoresist, the photoresist in the exposed portion is removed and the photoresist in the unexposed portion is left to form the first mask 351. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left to form the first mask 351. The formation process of the first mask 351 is performed in an air atmosphere.

[0023] 4 is an example of a schematic cross-sectional view of the substrate after the process of step S105. The first mask 351 is selectively formed on the first anode electrode 311. On the other hand, the first mask 351 is not formed on the second anode electrode 312 and the third anode electrode 313.

[0024] In step S106, an etching process is performed on the substrate. Here, the first sealing layer 341, the first cathode electrode 331, and the first light-emitting layer 321 are etched by plasma etching through the first mask 351. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0025] 5 is an example of a schematic cross-sectional view of the substrate after the process of step S106. The first sealing layer 341, the first cathode electrode 331, and the first light-emitting layer 321 are removed on the second anode electrode 312 and the third anode electrode 313. On the other hand, the first light-emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 covered with the first mask 351 remain on the first anode electrode 311. In this manner, a first laminate (organic EL element) in which the first anode electrode 311, the first light-emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 are laminated is formed on the substrate by the processes of steps S102 to S106. The first mask 351 is completely ashed and removed in the etching process.

[0026] In step S107, the second light-emitting layer 322 is formed on the substrate. Here, a continuous film of the second light-emitting layer 322 is formed so as to cover the entire electrode array 310. The second light-emitting layer 322 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., green (G)) when a voltage is applied between the electrodes (the second anode electrode 312, and the second cathode electrode 332 described later). The second light-emitting layer 322 is formed by, for example, vacuum deposition or the like.

[0027] In step S108, the second cathode electrode 332 is formed on the substrate. Here, a continuous film of the second cathode electrode 332 is formed on the second light emitting layer 322. The second cathode electrode 332 is made of, for example, ITO, IZO, or the like, and a layer made of MgAg may be added as a base between the second light emitting layer 322 and the second cathode electrode 332. In addition, when a cavity structure is provided, MgAg may be used as the cathode electrode material. The second cathode electrode 332 is formed by, for example, any of the film formation processes such as vacuum deposition, PVD film formation, CVD film formation, and ALD film formation, or a combination thereof.

[0028] In step S109, the second sealing layer 342 is formed on the substrate. Here, a continuous film of the second sealing layer 342 is formed on the second cathode electrode 332. The second sealing layer 342 includes a second inorganic insulating film. The second inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The second sealing layer 342 is formed by, for example, a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The second light emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 are formed in a vacuum atmosphere.

[0029] 6 is an example of a schematic cross-sectional view of the substrate after the process of step S109. A second light-emitting layer 322 is formed on the electrode array 310 (first anode electrode 311, second anode electrode 312, third anode electrode 313). A second cathode electrode 332 is formed on the second light-emitting layer 322. A second sealing layer 342 is formed on the second cathode electrode 332. The second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 are also formed on the first laminate (first anode electrode 311, first light-emitting layer 321, first cathode electrode 331, and first sealing layer 341).

[0030] The multiple anode electrodes 311, 312, 313, the first and second light emitting layers 321, 322, and the first and second cathode electrodes 331, 332 are sealed by a second sealing layer 342. This prevents the multiple anode electrodes 311, 312, 313, the first and second light emitting layers 321, 322, and the first and second cathode electrodes 331, 332 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0031] In step S110, a second mask 352 is formed on the substrate. Here, the second mask 352 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the second mask 352 from the photoresist. In the case of a positive photoresist, the photoresist in the exposed portion is removed and the photoresist in the unexposed portion is left to form the second mask 352. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left to form the second mask 352. In addition, the formation process of the second mask 352 is performed in an air atmosphere.

[0032] 7 is an example of a schematic cross-sectional view of the substrate after the process of step S110. The second mask 352 is selectively formed on the second anode electrode 312. On the other hand, the second mask 352 is not formed on the first anode electrode 311 and the third anode electrode 313.

[0033] In step S111, an etching process is performed on the substrate. Here, the second sealing layer 342, the second cathode electrode 332, and the second light-emitting layer 322 are etched by plasma etching through the second mask 352. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0034] 8 is an example of a schematic cross-sectional view of the substrate after the process of step S111. The second sealing layer 342, the second cathode electrode 332, and the second light-emitting layer 322 are removed on the first laminate (first anode electrode 311) and the third anode electrode 313. Meanwhile, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 covered with the second mask 352 remain on the second anode electrode 312. In this manner, by the processes of steps S107 to S111, the second laminate (organic EL element) in which the second anode electrode 312, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 are laminated is formed on the substrate. The second mask 352 is completely ashed and removed in the etching process.

[0035] In step S112, the third light-emitting layer 323 is formed on the substrate. Here, a continuous film of the third light-emitting layer 323 is formed so as to cover the entire electrode array 310. The third light-emitting layer 323 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., blue (B)) when a voltage is applied between the electrodes (the third anode electrode 313, and the third cathode electrode 333 described later). The third light-emitting layer 323 is formed by, for example, vacuum deposition or the like.

[0036] In step S113, the third cathode electrode 333 is formed on the substrate. Here, a continuous film of the third cathode electrode 333 is formed on the third light emitting layer 323. The third cathode electrode 333 is made of, for example, ITO, IZO, or the like, and a layer made of MgAg may be added as a base between the third light emitting layer 323 and the third cathode electrode 333. In addition, when a cavity structure is provided, MgAg may be used as the cathode electrode material. The formation process of the third cathode electrode 333 is performed by any one of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0037] In step S114, the third sealing layer 343 is formed on the substrate. Here, a continuous film of the third sealing layer 343 is formed on the third cathode electrode 333. The third sealing layer 343 includes a third inorganic insulating film. The third inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The third sealing layer 343 is formed by, for example, a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The third light emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 are formed in a vacuum atmosphere.

[0038] 9 is an example of a schematic cross-sectional view of the substrate after the process of step S114. A third light-emitting layer 323 is formed on the electrode array 310 (first anode electrode 311, second anode electrode 312, third anode electrode 313). A third cathode electrode 333 is formed on the third light-emitting layer 323. A third sealing layer 343 is formed on the third cathode electrode 333. The third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 are also formed on the first stack (first anode electrode 311, first light-emitting layer 321, first cathode electrode 331, and first sealing layer 341) and the second stack (second anode electrode 312, second light-emitting layer 322, second cathode electrode 332, and second sealing layer 342).

[0039] The multiple anode electrodes 311, 312, 313, the first to third light emitting layers 321-323, and the first to third cathode electrodes 331-333 are sealed by a third sealing layer 343. This prevents the multiple anode electrodes 311, 312, 313, the first to third light emitting layers 321-323, and the first to third cathode electrodes 331-333 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0040] In step S115, a third mask 353 is formed on the substrate. Here, the third mask 353 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the third mask 353 from the photoresist. In the case of a positive photoresist, the third mask 353 is formed by removing the photoresist in the exposed portion and leaving the photoresist in the unexposed portion. On the other hand, in the case of a negative photoresist, the third mask 353 is formed by removing the photoresist in the unexposed portion and leaving the photoresist in the exposed portion. The formation process of the third mask 353 is performed in an air atmosphere.

[0041] 10 is an example of a schematic cross-sectional view of the substrate after the process of step S115. The third mask 353 is selectively formed on the third anode electrode 313. On the other hand, the third mask 353 is not formed on the first anode electrode 311 and the second anode electrode 312.

[0042] In step S116, an etching process is performed on the substrate. Here, the third sealing layer 343, the third cathode electrode 333, and the third light-emitting layer 323 are etched by plasma etching through the third mask 353. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0043] 11 is an example of a schematic cross-sectional view of the substrate after the process of step S116. The third sealing layer 343, the third cathode electrode 333, and the third light-emitting layer 323 are removed on the first laminate (first anode electrode 311) and the second laminate (second anode electrode 312). Meanwhile, the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 covered with the third mask 353 remain on the third anode electrode 313. In this manner, a third laminate (organic EL element) in which the third anode electrode 313, the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 are laminated is formed on the substrate by the processes of steps S112 to S116. The third mask 353 is completely ashed and removed in the etching process.

[0044] In step S117, fourth sealing layer 344 is formed on the substrate. Here, a continuous film of fourth sealing layer 344 is formed on the substrate on which the first to third stacked bodies are formed. Fourth sealing layer 344 includes a fourth inorganic insulating film. The fourth inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), aluminum oxide (AlO), or a combination of these. The formation process of fourth sealing layer 344 is performed by, for example, any of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The formation process of fourth sealing layer 344 is performed in a vacuum atmosphere.

[0045] 12 is an example of a schematic cross-sectional view of the substrate after the process of step S117. The fourth sealing layer 344 seals the first to third stacks. This prevents the multiple anode electrodes 311, 312, 313, the first to third light emitting layers 321-323, and the first to third cathode electrodes 331-333 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0046] In step S118, a fourth mask 354 is formed on the substrate. Here, the fourth mask 354 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the fourth mask 354 from the photoresist. In the case of a positive photoresist, the fourth mask 354 is formed by removing the photoresist in the exposed portion and leaving the photoresist in the unexposed portion. On the other hand, in the case of a negative photoresist, the fourth mask 354 is formed by removing the photoresist in the unexposed portion and leaving the photoresist in the exposed portion. The formation process of the fourth mask 354 is performed in an air atmosphere.

[0047] 13 is an example of a schematic cross-sectional view of the substrate after the process of step S118. The fourth mask 354 is formed to have openings at positions where contact holes for the first to third cathode electrodes 331 to 333 are to be formed.

[0048] In step S119, an etching process is performed on the substrate. Here, the first to fourth sealing layers 341 to 344 are etched by plasma etching process through the fourth mask 354. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0049] 14 is an example of a schematic cross-sectional view of the substrate after the process of step S119. Contact hole 331c communicating with first cathode electrode 331 is formed by etching first sealing layer 341 and fourth sealing layer 344. Contact hole 332c communicating with second cathode electrode 332 is formed by etching second sealing layer 342 and fourth sealing layer 344. Contact hole 333c communicating with third cathode electrode 333 is formed by etching third sealing layer 343 and fourth sealing layer 344. Fourth mask 354 is completely ashed and removed in the etching process.

[0050] In step S120, the wiring layer 360 is formed on the substrate. Here, a continuous film of the wiring layer 360 is formed on the fourth sealing layer 344. The wiring layer 360 is made of, for example, ITO, IZO, or the like. The formation process of the wiring layer 360 is performed by any one of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, and ALD film formation, or a combination thereof. The wiring layer 360 is electrically connected to the first cathode electrode 331 through the contact hole 331c. The wiring layer 360 is also electrically connected to the second cathode electrode 332 through the contact hole 332c. The wiring layer 360 is also electrically connected to the third cathode electrode 333 through the contact hole 333c.

[0051] In step S121, fifth sealing layer 345 is formed on the substrate. Here, a continuous film of fifth sealing layer 345 is formed on the substrate on which wiring layer 360 is formed. Fifth sealing layer 345 includes a fifth inorganic insulating film. Fifth inorganic insulating film is composed of, for example, silicon oxide film (SiO), silicon nitride film (SiN), silicon oxynitride film (SiON), aluminum oxide (AlO), or a combination of these. Note that the formation process of fifth sealing layer 345 is performed by, for example, any of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. Furthermore, the formation process of fifth sealing layer 345 is performed in a vacuum atmosphere.

[0052] 15 is an example of a schematic cross-sectional view of the substrate after the process of step S121. The fifth sealing layer 345 seals the first to third stacked bodies and the wiring layer 360. This prevents the multiple anode electrodes 311, 312, 313, the first to third light emitting layers 321-323, the first to third cathode electrodes 331-333, and the wiring layer 360 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0053] As described above, according to the substrate processing method of the first embodiment, three types of organic EL elements that respectively emit red (R), green (G), and blue (B) colors can be formed on a substrate.

[0054] Furthermore, the substrate processing method according to the first embodiment prevents the electrodes (the anode electrodes 311-313 and the cathode electrodes 331-333) and the light-emitting layers 321-323 from being altered by moisture, oxygen, etc. during photolithography, thereby suppressing deterioration of the organic EL elements.

[0055] Here, a substrate processing method according to a reference example will be described. In the substrate processing method according to the reference example, a step of forming a light-emitting layer on the entire substrate, a step of forming a cathode electrode on the entire substrate, a step of forming a first sealing layer on the entire substrate, a step of forming a first mask on one selected type of anode electrode, a step of etching the light-emitting layer, the cathode electrode, and the first sealing layer on the anode electrode on which the first mask is not formed, a step of forming a second sealing layer on the entire substrate, a step of forming a second mask on one selected type of anode electrode, and a step of etching the second sealing layer on the anode electrode on which the second mask is not formed, are performed on the substrate to form one type of organic EL element. By repeating this process two more times, three types of organic EL elements are formed on the substrate.

[0056] Furthermore, the substrate processing method of the reference example includes the steps of forming a mask for forming contact holes, forming contact holes by etching, forming a wiring layer, forming a mask for etching the wiring layer, removing a portion of the wiring layer by etching, and forming a sealing layer.

[0057] Here, according to the substrate processing method of the reference example, the number of times of photolithography processing is 8, the number of times of etching processing is 8, and the number of times of forming the sealing layer is 7. Also, according to the substrate processing method of the reference example, the number of times that the anode electrodes are exposed to plasma is 0 times for the first type anode electrodes, 2 times for the second type anode electrodes, and 4 times for the third type anode electrodes.

[0058] In contrast, according to the substrate processing method of the first embodiment, the photolithography process is performed four times, the etching process is performed four times, and the sealing layer is formed five times. Thus, according to the substrate processing method of the first embodiment, the number of steps of the photolithography process, the etching process, and the sealing layer formation process can be reduced compared to the substrate processing method of the reference example. This improves the productivity in the substrate processing for forming multiple types of organic EL elements.

[0059] Furthermore, according to the substrate processing method of the first embodiment, the number of times the anode electrodes 311-313 are exposed to plasma is 0 times for the first anode electrode 311, 1 time for the second anode electrode 312, and 2 times for the third anode electrode 313. Thus, according to the substrate processing method of the first embodiment, the maximum number of times the anode electrodes 311-313 are exposed to plasma (in other words, the plasma exposure time) can be suppressed compared to the substrate processing method of the reference example. This suppresses deterioration of the anode electrodes 311-313, and thereby suppresses deterioration of the organic EL elements.

[0060] (Another Example of the Step of Forming the First Laminate) FIG. 16 is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0061] In the example of the substrate processing method according to the first embodiment shown in Figures 1 to 15, when forming the first laminate using the first mask 351 (see step S106 in Figure 1), the first sealing layer 341 is removed through the first mask 351 until the portion of the first sealing layer 341 exposed from the first mask 351 disappears (see Figures 4 and 5), but this may also be done as follows.

[0062] 16(A), in the first step, first sealing layer 341 is removed through first mask 351 so as to leave a part of the portion of first sealing layer 341 exposed from first mask 351. That is, first sealing layer 341 in the portion corresponding to anode electrodes 312 and 313 other than anode electrode 311 is removed through first mask 351 so as to leave a part of it.

[0063] Next, in a second process, as shown in FIG. 16(B), the first mask 351 is removed by ashing, similar to the above-described step S106.

[0064] 16(C), in a third step, the entire first sealing layer 341 including the portion corresponding to the anode electrode 311 is etched. This etching is performed until the portions of the first sealing layer 341 corresponding to the anode electrodes 312 and 313 other than the anode electrode 311 are lost.

[0065] 16(D), in the fourth step, the first cathode electrode 331 and the first light-emitting layer 321 are removed using the remaining first sealing layer 341 as a mask to form a first laminate. That is, after the first mask 351 is ashed, the remaining first sealing layer 341, the first cathode electrode 331, and the first light-emitting layer 321 are removed from the portions corresponding to the anode electrodes 312 and 313 other than the anode electrode 311 to form a first laminate.

[0066] By forming the first laminate in this manner, it is possible to prevent the first light-emitting layer 321 from being damaged during the ashing of the first mask 351. It is also possible to prevent the first cathode electrode 331 from being damaged during the ashing of the first mask 351. This formation process can also be applied to the second and subsequent laminates, and it is possible to prevent the light-emitting layer and the cathode electrode corresponding to each laminate from being damaged.

[0067] <Second embodiment> Another example of a substrate processing method for forming a plurality of types of organic EL elements on a substrate will be described with reference to Fig. 17 to Fig. 34. Fig. 17 is a flow chart showing an example of a substrate processing method according to a second embodiment. Fig. 18 to Fig. 34 are examples of schematic cross-sectional views of a substrate in each process.

[0068] Here, a substrate processing method for forming three types of organic EL elements on a substrate is taken as an example. Specifically, a case where an organic EL element that emits red (R), an organic EL element that emits green (G), and an organic EL element that emits blue (B) is formed on a substrate is taken as an example. The organic EL element is composed of an anode electrode, a light-emitting layer, and a cathode electrode laminated together.

[0069] The number of types of organic EL elements formed on the substrate is not limited to three, and may be one type or two or more types.

[0070] In step S201, a substrate is prepared.

[0071] FIG. 18 is an example of a schematic cross-sectional view of the substrate prepared in step S201. The substrate includes a base material 400 and an electrode array 410. The base material 400 is made of, for example, a glass plate. The base material 400 is not limited to this, and may be a ceramic plate, a plastic plate, a metal plate, a silicon plate, or the like, and the material is not limited. The base material 400 may be made of an insulating material. The base material 400 may be made of a light-transmitting material. The shape of the substrate (base material 400) may be rectangular, circular, or the like, and the shape is not limited.

[0072] The electrode array 410 has a plurality of anode electrodes 411, 412, and 413. Here, the electrode array 410 includes a first anode electrode 411, a second anode electrode 412, and a third anode electrode 413. The plurality of anode electrodes 411, 412, and 413 are made of, for example, ITO. Note that the plurality of anode electrodes 411, 412, and 413 are not limited to this, and a layer made of silver or aluminum may be added as a base between the layer of the base material 400 and the anode electrodes 411, 412, and 413. The plurality of anode electrodes 411, 412, and 413 may be made of a material having electrical conductivity. The plurality of anode electrodes 411, 412, and 413 may be made of a material having translucency. The plurality of anode electrodes 411, 412, and 413 are arranged at different positions on the surface of the substrate (base material 400).

[0073] In addition, in step S201, a substrate having the electrode array 410 is prepared, but this is not limited to the above. Step S201 may include a process of forming the electrode array 410 on the substrate (base material 400).

[0074] In step S202, first sealing layer 441 is formed on the substrate. Here, a continuous film of first sealing layer 441 is formed so as to cover the entire electrode array 410. First sealing layer 441 includes a first inorganic insulating film. The first inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), aluminum oxide (AlO), or a combination of these. Note that the formation process of first sealing layer 441 is performed by, for example, any of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. Also, the formation process of first sealing layer 441 is performed in a vacuum atmosphere.

[0075] The multiple anode electrodes 411, 412, and 413 are sealed with a first sealing layer 441. This prevents the multiple anode electrodes 411, 412, and 413 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0076] In step S203, a first mask 451 is formed on the substrate. Here, the first mask 451 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the first mask 451 from the photoresist. In the case of a positive photoresist, the photoresist in the exposed portion is removed and the photoresist in the unexposed portion is left to form the first mask 451. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left to form the first mask 451. The formation process of the first mask 451 is performed in an air atmosphere.

[0077] 19 is an example of a schematic cross-sectional view of the substrate after the process of step S203. The first mask 451 is formed with an opening above the first anode electrode 411. That is, the first mask 451 is not formed above the first anode electrode 411, but is formed above the second anode electrode 412 and the third anode electrode 413.

[0078] In step S204, an etching process is performed on the substrate. Here, first sealing layer 441 is etched by plasma etching through first mask 451. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0079] 20 is an example of a schematic cross-sectional view of the substrate after the process of step S204. First sealing layer 441 is removed above first anode electrode 411, and opening 441a communicating with first anode electrode 411 is formed in first sealing layer 441. Meanwhile, first sealing layer 441 covered with first mask 451 remains above second anode electrode 412 and third anode electrode 413. That is, opening 441a is formed in first sealing layer 441 at a position corresponding to first anode electrode 411 by the processes of steps S203 to S204. Note that first mask 451 is completely ashed and removed in the etching process.

[0080] In step S205, the first light-emitting layer 421 is formed on the substrate. Here, a continuous film of the first light-emitting layer 421 is formed so as to cover the entire electrode array 410. The first light-emitting layer 421 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., red (R)) when a voltage is applied between the electrodes (the first anode electrode 411, the first cathode electrode 431 described later). The first light-emitting layer 421 is formed by, for example, vacuum deposition or the like.

[0081] In step S206, the first cathode electrode 431 is formed on the substrate. Here, a continuous film of the first cathode electrode 431 is formed on the first light emitting layer 421. The first cathode electrode 431 is made of, for example, ITO, IZO, or the like, and a layer made of MgAg may be added as a base between the first light emitting layer 421 and the first cathode electrode 431. Furthermore, when a cavity structure is provided, MgAg may be used as the cathode electrode material. The first cathode electrode 431 is formed by, for example, any one of vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0082] 21 is an example of a schematic cross-sectional view of the substrate after the process of step S206. A first light-emitting layer 421 and a first cathode electrode 431 are formed on the first anode electrode 411. In addition, a first sealing layer 441, the first light-emitting layer 421, and the first cathode electrode 431 are formed on the second anode electrode 412 and the third anode electrode 413.

[0083] In step S207, the second sealing layer 442 is formed on the substrate. Here, a continuous film of the second sealing layer 442 is formed on the first cathode electrode 431. The second sealing layer 442 includes a second inorganic insulating film. The second inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The second sealing layer 442 is formed by, for example, a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The first light emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are formed in a vacuum atmosphere.

[0084] 22 is an example of a schematic cross-sectional view of the substrate after the process of step S207. Second sealing layer 442 is formed on first cathode electrode 431.

[0085] The multiple anode electrodes 411, 412, 413, the first light-emitting layer 421, and the first cathode electrode 431 are sealed by a second sealing layer 442. This prevents the multiple anode electrodes 411, 412, 413, the first light-emitting layer 421, and the first cathode electrode 431 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0086] In step S208, a second mask 452 is formed on the substrate. Here, the second mask 452 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, the substrate on which the photoresist is formed is irradiated with light through a photomask. Here, a half-tone mask is used for the photomask. As a result, an exposed portion irradiated with light, a semi-exposed portion irradiated with a part of the transmitted light, and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the second mask 452 is formed from the photoresist. In the case of a positive photoresist, the photoresist in the exposed portion is removed and the photoresist in the unexposed portion is left, thereby forming the second mask 452. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left, thereby forming the second mask 452. In addition, the film thickness of the second mask 452 is thin in the semi-exposed portion. The process of forming the second mask 452 is performed in an air atmosphere.

[0087] 23 is an example of a schematic cross-sectional view of the substrate after the process of step S208. The second mask 452 is formed with a first thickness on the first anode electrode 411. The second mask 452 is formed with an opening on the second anode electrode 412. The second mask 452 is formed with a second thickness that is thinner than the first thickness on the third anode electrode 413.

[0088] In step S209, an etching process is performed on the substrate. Here, the second sealing layer 442, the first cathode electrode 431, and the first light-emitting layer 421 are etched by plasma etching through the second mask 452. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0089] 24 is an example of a schematic cross-sectional view of the substrate after the process of step S209. In the portion covered with the second mask 452 having the first thickness, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are not removed by etching but remain. In the portion covered with the second mask 452 having the second thickness, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are removed by etching, and the first sealing layer 441 remains. In the portion opened by the second mask 452, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are removed by etching, and further, the first sealing layer 441 is also removed by etching.

[0090] In this manner, by the processes of steps S205 to S209, a first laminate (organic EL element) is formed on the substrate, in which the first anode electrode 411, the first light emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are laminated. Also, the first sealing layer 441 is removed above the second anode electrode 412, and an opening 441b communicating with the second anode electrode 412 is formed in the first sealing layer 441. Meanwhile, the third anode electrode 413 is covered with the first sealing layer 441. That is, by the processes of steps S208 to S209, the first laminate is formed, and the opening 441b is formed in the first sealing layer 441 at a position corresponding to the second anode electrode 412. The second mask 452 is completely ashed and removed in the etching process.

[0091] In step S210, the second light-emitting layer 422 is formed on the substrate. Here, a continuous film of the second light-emitting layer 422 is formed so as to cover the entire electrode array 410. The second light-emitting layer 422 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., green (G)) when a voltage is applied between the electrodes (the second anode electrode 412, and the second cathode electrode 432 described later). The second light-emitting layer 422 is formed by, for example, vacuum deposition or the like.

[0092] In step S211, the second cathode electrode 432 is formed on the substrate. Here, a continuous film of the second cathode electrode 432 is formed on the second light emitting layer 422. The second cathode electrode 432 is made of, for example, ITO, IZO, or the like, and a layer made of MgAg may be added as a base between the second light emitting layer 422 and the second cathode electrode 432. In addition, when a cavity structure is provided, MgAg may be used as the cathode electrode material. The second cathode electrode 432 is formed by, for example, any one of vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0093] 25 is an example of a schematic cross-sectional view of the substrate after the process of step S211. A second light-emitting layer 422 and a second cathode electrode 432 are formed on the second anode electrode 412. In addition, a second light-emitting layer 422 and a second cathode electrode 432 are formed on the first laminate. In addition, a first sealing layer 441, a second light-emitting layer 422, and a second cathode electrode 432 are formed on the third anode electrode 413.

[0094] In step S212, the third sealing layer 443 is formed on the substrate. Here, a continuous film of the third sealing layer 443 is formed on the second cathode electrode 432. The third sealing layer 443 includes a third inorganic insulating film. The third inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The third sealing layer 443 is formed by, for example, a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The second light emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are formed in a vacuum atmosphere.

[0095] 26 is an example of a schematic cross-sectional view of the substrate after the process of step S212. Third sealing layer 443 is formed on second cathode electrode 432.

[0096] The multiple anode electrodes 411, 412, 413, the first and second light emitting layers 421, 422, and the first and second cathode electrodes 431, 432 are sealed by a third sealing layer 443. This prevents the multiple anode electrodes 411, 412, 413, the first and second light emitting layers 421, 422, and the first and second cathode electrodes 431, 432 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0097] In step S213, a third mask 453 is formed on the substrate. Here, the third mask 453 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, the substrate on which the photoresist is formed is irradiated with light through a photomask. Here, a half-tone mask is used for the photomask. As a result, an exposed portion irradiated with light, a semi-exposed portion irradiated with a part of the transmitted light, and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the third mask 453 is formed from the photoresist. In the case of a positive photoresist, the photoresist in the exposed portion is removed and the photoresist in the unexposed portion is left, thereby forming the third mask 453. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left, thereby forming the third mask 453. In addition, the film thickness of the third mask 453 is thin in the semi-exposed portion. The process of forming the third mask 453 is performed in an air atmosphere.

[0098] 27 is an example of a schematic cross-sectional view of the substrate after the process of step S213. The third mask 453 is formed with a first thickness on the second anode electrode 412. The third mask 453 is formed with an opening on the third anode electrode 413. The third mask 453 is formed with a second thickness on the first anode electrode 411 that is thinner than the first thickness.

[0099] In step S214, an etching process is performed on the substrate. Here, the third sealing layer 443, the second cathode electrode 432, and the second light-emitting layer 422 are etched by plasma etching through the third mask 453. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0100] 28 is an example of a schematic cross-sectional view of the substrate after the process of step S214. In the portion covered with the third mask 453 having the first thickness, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are not removed by etching and remain. In the portion covered with the third mask 453 having the second thickness, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are removed by etching, and the first sealing layer 441 remains. In the portion opened by the third mask 453, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are removed by etching, and further, the first sealing layer 441 is also removed by etching.

[0101] In this manner, by the processes of steps S210 to S214, a second laminate (organic EL element) is formed on the substrate, in which the second anode electrode 412, the second light emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are laminated. In addition, the first sealing layer 441 is removed on the third anode electrode 413, and an opening 441c communicating with the third anode electrode 413 is formed in the first sealing layer 441. In addition, the second light emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 on the first laminate are removed. That is, by the processes of steps S213 to S214, the second laminate is formed, and the opening 441c is formed in the first sealing layer 441 at a position corresponding to the third anode electrode 413. The third mask 453 is completely ashed and removed in the etching process.

[0102] In step S215, the third light-emitting layer 423 is formed on the substrate. Here, a continuous film of the third light-emitting layer 423 is formed so as to cover the entire electrode array 410. The third light-emitting layer 423 is a light-emitting layer (organic EL layer) that includes an organic EL and emits light of a specific color (e.g., blue (B)) when a voltage is applied between the electrodes (the third anode electrode 413, and the third cathode electrode 433 described later). The formation process of the third light-emitting layer 423 is performed by, for example, vacuum deposition or the like.

[0103] In step S216, the third cathode electrode 433 is formed on the substrate. Here, a continuous film of the third cathode electrode 433 is formed on the third light emitting layer 423. The third cathode electrode 433 is made of, for example, ITO, IZO, or the like, and a layer made of MgAg may be added as a base between the third light emitting layer 423 and the third cathode electrode 433. In addition, when a cavity structure is provided, MgAg may be used as a cathode electrode material. The formation process of the third cathode electrode 433 is performed by any one of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0104] 29 is an example of a schematic cross-sectional view of the substrate after the process of step S216. A third light-emitting layer 423 and a third cathode electrode 433 are formed on the third anode electrode 413. In addition, a third light-emitting layer 423 and a third cathode electrode 433 are formed on the first stack and the second stack.

[0105] In step S217, the fourth sealing layer 444 is formed on the substrate. Here, a continuous film of the fourth sealing layer 444 is formed on the third cathode electrode 433. The fourth sealing layer 444 includes a fourth inorganic insulating film. The fourth inorganic insulating film is composed of, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), or a combination of these. The formation process of the fourth sealing layer 444 is performed by, for example, any of a film formation process such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. The formation processes of the third light emitting layer 423, the third cathode electrode 433, and the fourth sealing layer 444 are performed in a vacuum atmosphere.

[0106] 30 is an example of a schematic cross-sectional view of the substrate after the process of step S217. Fourth sealing layer 444 is formed on third cathode electrode 433.

[0107] The multiple anode electrodes 411, 412, 413, the first to third light emitting layers 421-423, and the first to third cathode electrodes 431-433 are sealed by a fourth sealing layer 444. This prevents the multiple anode electrodes 411, 412, 413, the first to third light emitting layers 421-423, and the first to third cathode electrodes 431-433 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0108] In step S218, a fourth mask 454 is formed on the substrate. Here, the fourth mask 454 is formed on the substrate by photolithography. The photolithography process includes a resist forming process, an exposure process, and a development process. The resist forming process forms a photoresist on the substrate. The exposure process irradiates the substrate on which the photoresist is formed with light through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the fourth mask 454 from the photoresist. In the case of a positive photoresist, the fourth mask 454 is formed by removing the photoresist in the exposed portion and leaving the photoresist in the unexposed portion. On the other hand, in the case of a negative photoresist, the fourth mask 454 is formed by removing the photoresist in the unexposed portion and leaving the photoresist in the exposed portion. The formation process of the fourth mask 454 is performed in an air atmosphere.

[0109] 31 is an example of a schematic cross-sectional view of the substrate after the process of step S218. The fourth mask 454 is selectively formed on the third anode electrode 413. On the other hand, the fourth mask 454 is not formed on the first anode electrode 411 and the second anode electrode 412.

[0110] In step S219, an etching process is performed on the substrate. Here, the fourth sealing layer 444, the third cathode electrode 433, and the third light-emitting layer 423 are etched by plasma etching through the fourth mask 454. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0111] FIG. 32 is an example of a schematic cross-sectional view of the substrate after the process of step S219. The fourth sealing layer 444, the third cathode electrode 433, and the third light-emitting layer 423 are removed on the first laminate (first anode electrode 411) and the second laminate (second anode electrode 412). Meanwhile, the fourth sealing layer 444, the third cathode electrode 433, and the third light-emitting layer 423 covered with the fourth mask 454 remain on the third anode electrode 413. In this manner, the processes of steps S215 to S219 form a third laminate (organic EL element) on the substrate in which the third anode electrode 413, the third light-emitting layer 423, the third cathode electrode 433, and the fourth sealing layer 444 are laminated. That is, the processes of steps S218 to S219 form the third laminate. The fourth mask 454 is completely ashed and removed in the etching process.

[0112] In step S220, an etching process is performed on the substrate. Here, a plasma etching process is used to etch a part of the second to fourth sealing layers 442 to 444. Note that the etching process is a dry etching process, and is performed in a vacuum atmosphere.

[0113] 33 is an example of a schematic cross-sectional view of the substrate after the process of step S220. By etching a portion of second sealing layer 442, exposed portion 431c of first cathode electrode 431 is formed. By etching a portion of third sealing layer 443, exposed portion 432c of second cathode electrode 432 is formed. By etching a portion of fourth sealing layer 444, exposed portion 433c of third cathode electrode 433 is formed.

[0114] In step S221, the wiring layer 460 is formed on the substrate. Here, a continuous film of the wiring layer 460 is formed on the substrate. The wiring layer 460 is made of, for example, ITO, IZO, or the like. The formation process of the wiring layer 460 is performed by, for example, any one of deposition processes such as vacuum deposition, PVD deposition, CVD deposition, and ALD deposition, or a combination thereof. The wiring layer 460 is electrically connected to the first cathode electrode 431 via the exposed portion 431c. The wiring layer 460 is also electrically connected to the second cathode electrode 432 via the exposed portion 432c. The wiring layer 460 is also electrically connected to the third cathode electrode 433 via the exposed portion 433c.

[0115] In step S222, fifth sealing layer 445 is formed on the substrate. Here, a continuous film of fifth sealing layer 445 is formed on the substrate on which wiring layer 460 is formed. Fifth sealing layer 445 includes a fifth inorganic insulating film. Fifth inorganic insulating film is composed of, for example, silicon oxide film (SiO), silicon nitride film (SiN), silicon oxynitride film (SiON), aluminum oxide (AlO), or a combination of these. Note that the formation process of fifth sealing layer 445 is performed by, for example, any of film formation processes such as vacuum deposition, PVD film formation, CVD film formation, ALD film formation, or a combination of these. Furthermore, the formation process of fifth sealing layer 445 is performed in a vacuum atmosphere.

[0116] 34 is an example of a schematic cross-sectional view of the substrate after the process of step S222. The fifth sealing layer 445 seals the first to third stacked bodies and the wiring layer 460. This prevents the multiple anode electrodes 411, 412, 413, the first to third light emitting layers 421-423, the first to third cathode electrodes 431-433, and the wiring layer 460 from coming into contact with oxygen, moisture, and the like when the substrate is exposed to the air atmosphere.

[0117] As described above, according to the substrate processing method of the second embodiment, three types of organic EL elements that respectively emit red (R), green (G), and blue (B) colors can be formed on a substrate.

[0118] Furthermore, the substrate processing method according to the second embodiment prevents the electrodes (the anode electrodes 411-413 and the cathode electrodes 431-433) and the light-emitting layers 421-423 from being altered by moisture, oxygen, etc. during photolithography, thereby suppressing deterioration of the organic EL elements.

[0119] Moreover, according to the substrate processing method of the second embodiment, the photolithography process is performed four times, the etching process is performed five times (four times if step S219 and step S220 are the same process), and the sealing layer is formed five times. Thus, according to the substrate processing method of the second embodiment, the number of steps of the photolithography process, the etching process, and the sealing layer formation process can be reduced compared to the substrate processing method of the reference example. This improves the productivity in substrate processing for forming multiple types of organic EL elements.

[0120] Moreover, according to the substrate processing method of the second embodiment, the anode electrodes 411-413 are exposed to plasma twice for the first anode electrode 411, twice for the second anode electrode 412, and twice for the third anode electrode 413. Thus, according to the substrate processing method of the second embodiment, the maximum value of the number of times the anode electrodes 411-413 are exposed to plasma (in other words, the plasma exposure time) can be suppressed compared to the substrate processing method of the reference example. This suppresses deterioration of the anode electrodes 411-413, thereby suppressing deterioration of the organic EL elements. Furthermore, the number of times the anode electrodes 411-413 are exposed to plasma can be made equal, suppressing the difference in damage to the anode electrodes 411-413 between different types of organic EL elements.

[0121] (Another Example of the Step of Forming the First Laminate) FIG. 35 is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0122] In the example of the substrate processing method according to the second embodiment shown in Figures 17 to 34, when forming the first laminate using the second mask 452 (see step S209 in Figure 17), the second sealing layer 442 is removed via the second mask 452 until the portion of the second sealing layer 442 exposed from the second mask 452 disappears (see Figures 22 and 23), but this may also be done as follows.

[0123] 35(A), in the first step, second sealing layer 442 is removed through second mask 452 so as to leave a portion of second sealing layer 442 exposed from second mask 452. That is, second sealing layer 442 in a portion corresponding to anode electrode 412 is removed through second mask 452 so as to leave a portion thereof.

[0124] Next, in a second step, as shown in FIG. 35(B), the second mask 452 is removed by ashing to a second thickness.

[0125] 35(C), in a third step, second sealing layer 442 is entirely etched, including the portions corresponding to anode electrodes 412 and 413 other than anode electrode 411. This etching is performed until the portion of second sealing layer 442 corresponding to anode electrode 412 disappears. Furthermore, the portion of first cathode electrode 431 corresponding to anode electrode 412 is removed by etching.

[0126] 35(D), second sealing layer 442 including a portion corresponding to parts other than anode electrode 411, first light-emitting layer 421 corresponding to anode electrode 412, and first sealing layer 441 are removed. First sealing layer 441 corresponding to anode electrode 412 is removed so that a part of it remains.

[0127] 35(E), in the fifth step, the second mask 452 including the portion corresponding to the anode electrode 411 is removed by ashing, and then the remaining second sealing layer 442 is used as a mask to remove the first light-emitting layer 421 and the first sealing layer 441 corresponding to the anode electrode 412, thereby forming a first laminate. That is, after the second mask 452 is ashed, the partially remaining first sealing layer 441 and the first light-emitting layer 421 are removed from the portions corresponding to the anode electrodes 412 and 413 other than the anode electrode 411, thereby forming the first laminate.

[0128] By forming the first laminate in this manner, it is possible to prevent the first light-emitting layer 421 from being damaged during the ashing of the second mask 452. It is also possible to prevent the first cathode electrode 431 from being damaged during the ashing of the second mask 452. This formation process can also be applied to the second and subsequent laminates, and it is possible to prevent the light-emitting layer and the cathode electrode corresponding to each laminate from being damaged.

[0129] In the present embodiment (first embodiment and second embodiment), the cathode electrode material and the anode electrode material of the top emission type have been described, but the present invention is not limited to this and may be of the bottom emission type. As the cathode electrode material of the bottom emission type, aluminum or the like is preferable, and as the anode electrode material, ITO, IZO or the like is preferable. In the case of a cavity structure, a layer of silver or the like may be sandwiched in the ITO film of the cathode electrode material.

[0130] <First substrate processing system> Next, an example of a first substrate processing system 1 for carrying out the substrate processing methods according to the first and second embodiments will be described with reference to Fig. 36. Fig. 36 is an example of a plan view showing the configuration of the first substrate processing system 1.

[0131] The first substrate processing system 1 includes a first processing station (substrate processing apparatus) 11, a load lock module 12, a carrier station 14, a second processing station 15, and a controller 20.

[0132] The first processing station 11 includes a vacuum transfer module 30 and a plurality of processing modules 40a, 40b (three each in the example of FIG. 36).

[0133] The vacuum transfer module 30 has a vacuum transfer chamber 31 whose interior is kept in a reduced pressure state (vacuum state). A transfer mechanism 32 for transferring a substrate G is provided inside the vacuum transfer chamber 31. The transfer mechanism 32 transfers the substrate G into and out of the processing modules 40a, 40b (specifically, vacuum processing chambers 41a, 41b) and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 32 has a transfer arm 32a that supports the substrate G during transfer.

[0134] The processing modules 40a and 40b have vacuum processing chambers 41a and 41b, and perform a predetermined process on the substrate G under reduced pressure. The vacuum processing chambers 41a and 41b are connected to the vacuum transfer chamber 31 via a gate valve G1. Each of the processing modules 40a performs a process for forming a sealing layer and an etching process. Each of the processing modules 40b performs a process for forming a light-emitting layer, a process for forming a cathode electrode, and a process for forming a wiring layer. The processing module 40b may include an inverting machine for inverting the substrate G when processing is performed by a face-down method.

[0135] The load lock module 12 connecting the first processing station 11 and the carrier station 14 has a load lock chamber 13 configured so that the interior can be switched between atmospheric pressure and vacuum. The load lock chamber 13 is connected to the vacuum transfer chamber 31 via a gate valve G2. The load lock chamber 13 is connected to the atmospheric transfer chamber 51 via a gate valve G3.

[0136] The load lock module 12 connecting one vacuum transfer module 30 to the other vacuum transfer module 30 has a load lock chamber 13 configured to switch the vacuum state inside the chamber. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of one vacuum transfer module 30 via one gate valve G2. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of the other vacuum transfer module 30 via the other gate valve G2.

[0137] A carrier C capable of accommodating a plurality of substrates G is loaded and unloaded from the carrier station 14. The carrier station 14 also has an atmospheric transfer chamber 51 whose interior is kept at atmospheric pressure. A transfer mechanism 52 for transferring the substrates G is provided within the atmospheric transfer chamber 51. The transfer mechanism 52 loads and unloads the substrates G between the carrier C placed on a carrier placement table 53 and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 52 has a transfer arm 52a for supporting the substrates G during transfer.

[0138] The second processing station 15 includes an atmospheric transfer module 60 and a plurality of processing modules 70 (three in the example of FIG. 36).

[0139] The atmospheric transfer module 60 has an atmospheric transfer chamber 61 whose interior is maintained at an atmospheric atmosphere. A transfer mechanism 62 for transferring a substrate G is provided in the atmospheric transfer chamber 61. The transfer mechanism 62 transfers the substrate G into and out of the processing module 70 (specifically, the atmospheric processing chamber 71). The transfer mechanism 62 has a transfer arm 62a for supporting the substrate G during transfer.

[0140] The processing module 70 has an atmospheric processing chamber 71, and performs a predetermined processing on the substrate G under atmospheric pressure. The atmospheric processing chamber 71 is connected to the atmospheric transfer chamber 61 via a gate valve G4. Each of the processing modules 70 performs each step of the photolithography process (resist formation step, exposure step, and development step).

[0141] The atmospheric transfer chamber 51 of the carrier station 14 and the atmospheric transfer chamber 61 of the second processing station 15 may be connected by a path module (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61. The atmospheric transfer chamber 61 of the second processing station 15 may have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61 by transferring a carrier C containing the substrate G.

[0142] The control unit 20 includes a computer equipped with a processor such as a CPU, a memory, and the like, and has a storage unit (not shown) for storing various information. The storage unit stores a program including instructions for a processing sequence executed by the first substrate processing system 1. The program may be recorded in a computer-readable storage medium and installed from the storage medium to the control unit 20. The storage medium may be temporary or non-temporary.

[0143] With this configuration, in the substrate processing method according to the first embodiment (see FIG. 1), in steps S102 to S104, steps S106 to S109, steps S111 to S114, steps S116 to S117, and steps S119 to S121, the substrate G is transferred via the vacuum transfer chamber 31 and the load lock chamber 13 between the vacuum transfer chamber 31. This allows the substrate G to be processed without being exposed to the atmosphere.

[0144] Furthermore, in the substrate processing method according to the second embodiment (see FIG. 17), in steps S204 to S207, steps S209 to S212, steps S214 to S217, and steps S219 to S222, the substrate G is transferred via the vacuum transfer chamber 31 and the load lock chamber 13 between the vacuum transfer chamber 31. This allows the substrate G to be processed without being exposed to the atmosphere.

[0145] That is, the first processing station 11 includes a vacuum processing chamber 41b for performing a process for forming a light-emitting layer, a vacuum processing chamber 41b for performing a process for forming a cathode electrode and a wiring layer, a vacuum processing chamber 41a for performing a process for forming a sealing layer, a vacuum processing chamber 41a for performing an etching process, and a vacuum transfer chamber 31 connecting these. The substrate G on which the mask is formed is transferred from the load lock chamber 13 to the first processing station 11. First, the substrate G is transferred to the vacuum processing chamber 41a for performing an etching process, and an etching process (e.g., step S106) is performed. Next, the substrate G is transferred via the vacuum transfer chamber 31 to the vacuum processing chamber 41b for performing a process for forming a light-emitting layer, and a process for forming a light-emitting layer (e.g., step S107) is performed. Furthermore, the substrate G is transferred via the vacuum transfer chamber 31 to the vacuum processing chamber 41b for performing a process for forming a cathode electrode layer, and a process for forming a cathode electrode (e.g., step S108) is performed. Then, the substrate G is transferred via the vacuum transfer chamber 31 to the vacuum processing chamber 41a where a sealing layer formation process is performed, and the sealing layer formation process (e.g., step S109) is performed. Thereafter, the substrate G is transferred out of the load lock chamber 13. Note that the substrate G may be transferred in or out from either of the two load lock chambers 13 connected to the carrier station 14.

[0146] <Second Substrate Processing System> Next, an example of a second substrate processing system 101 for carrying out the substrate processing methods according to the first and second embodiments will be described with reference to Fig. 37. Fig. 37 is an example of a plan view showing the configuration of the second substrate processing system 101.

[0147] The second substrate processing system 101 includes first processing stations (substrate processing apparatus) 111a-111d, load lock modules 112a-112e, carrier stations 114a and 114b, a second processing station 115, and a controller 120.

[0148] The first processing station 111a includes a vacuum transfer module 130a and a plurality of processing modules 140a (two in the example of FIG. 37).

[0149] The vacuum transfer module 130a has a vacuum transfer chamber 131a whose interior is kept in a reduced pressure state (vacuum state). A transfer mechanism 132a for transferring a substrate G is provided in the vacuum transfer chamber 131a. The transfer mechanism 132a transfers the substrate G into and out of the processing module 140a (specifically, the vacuum processing chamber 141a) and the load lock modules 112a, 112b (specifically, the load lock chambers 113a, 113b). The transfer mechanism 132a has a transfer arm 132a1 for supporting the substrate G during transfer.

[0150] The processing module 140a has a vacuum processing chamber 141a and performs a predetermined processing on the substrate G under reduced pressure. The vacuum processing chamber 141a is connected to the vacuum transfer chamber 131a via a gate valve G101a. Each of the processing modules 140a performs an etching process.

[0151] The first processing station 111b includes a vacuum transfer module 130b and a plurality of processing modules 140b (two in the example of FIG. 37).

[0152] The vacuum transfer module 130b has a vacuum transfer chamber 131b whose interior is kept in a reduced pressure state (vacuum state). A transfer mechanism 132b for transferring a substrate G is provided in the vacuum transfer chamber 131b. The transfer mechanism 132b transfers the substrate G into and out of the processing module 140b (specifically, the vacuum processing chamber 141b) and the load lock modules 112b, 112c (specifically, the load lock chambers 113b, 113c). The transfer mechanism 132b has a transfer arm 132b1 for supporting the substrate G during transfer.

[0153] The processing module 140b has a vacuum processing chamber 141b and performs a predetermined processing on the substrate G under reduced pressure. The vacuum processing chamber 141b is connected to the vacuum transfer chamber 131b via a gate valve G101b. Each of the processing modules 140b performs a process for forming a light-emitting layer. The processing module 140b may include an inverting machine for inverting the substrate G when processing is performed by a face-down method.

[0154] The first processing station 111c includes a vacuum transfer module 130c and a plurality of processing modules 140c (two in the example of FIG. 37).

[0155] The vacuum transfer module 130c has a vacuum transfer chamber 131c whose interior is kept in a reduced pressure state (vacuum state). A transfer mechanism 132c for transferring a substrate G is provided in the vacuum transfer chamber 131c. The transfer mechanism 132c transfers the substrate G into and out of the processing module 140c (specifically, the vacuum processing chamber 141c) and the load lock modules 112c, 112d (specifically, the load lock chambers 113c, 113d). The transfer mechanism 132c has a transfer arm 132c1 for supporting the substrate G during transfer.

[0156] The processing module 140c has a vacuum processing chamber 141c and performs a predetermined processing on the substrate G under reduced pressure. The vacuum processing chamber 141c is connected to the vacuum transfer chamber 131c via a gate valve G101c. Each of the processing modules 140c performs a cathode electrode forming process and a wiring layer forming process. The processing module 140c may include an inverting machine that inverts the substrate G when processing is performed by a face-down method.

[0157] The first processing station 111d includes a vacuum transfer module 130d and a plurality of processing modules 140d (two in the example of FIG. 37).

[0158] The vacuum transfer module 130d has a vacuum transfer chamber 131d whose interior is kept in a reduced pressure state (vacuum state). A transfer mechanism 132d for transferring a substrate G is provided in the vacuum transfer chamber 131d. The transfer mechanism 132d transfers the substrate G to and from a processing module 140d (specifically, a vacuum processing chamber 141d) and load lock modules 112d, 112e (specifically, load lock chambers 113d, 113e). The transfer mechanism 132d has a transfer arm 132d1 for supporting the substrate G during transfer.

[0159] The processing module 140d has a vacuum processing chamber 141d and performs a predetermined processing on the substrate G under reduced pressure. The vacuum processing chamber 141d is connected to the vacuum transfer chamber 131d via a gate valve G101d. Each of the processing modules 140d performs a process of forming a sealing layer.

[0160] The load lock module 112a has a load lock chamber 113a that can be switched between atmospheric pressure and vacuum. The load lock module 112a also connects the first processing station 111a and the carrier station 114a. The load lock chamber 113a is connected to the vacuum transfer chamber 131a via a gate valve G102a. The load lock chamber 113a is connected to the atmospheric transfer chamber 151a via a gate valve G103a.

[0161] The load lock module 112b has a load lock chamber 113b configured to be able to switch the vacuum state inside the chamber. The load lock module 112b also connects the first processing station 111a to the first processing station 111b. The load lock chamber 113b is connected to the vacuum transfer chamber 131b via a gate valve G102b. The load lock chamber 113b is connected to the vacuum transfer chamber 131a via a gate valve G103b.

[0162] The load lock module 112c has a load lock chamber 113c configured to be able to switch the vacuum state inside the chamber. The load lock module 112c also connects the first processing station 111b and the first processing station 111c. The load lock chamber 113c is connected to the vacuum transfer chamber 131c via a gate valve G102c. The load lock chamber 113c is connected to the vacuum transfer chamber 131b via a gate valve G103c.

[0163] The load lock module 112d has a load lock chamber 113d configured to switch the vacuum state inside the chamber. The load lock module 112d also connects the first processing station 111c to the first processing station 111d. The load lock chamber 113d is connected to the vacuum transfer chamber 131d via a gate valve G102d. The load lock chamber 113d is connected to the vacuum transfer chamber 131c via a gate valve G103d.

[0164] The load lock module 112e includes a load lock chamber 113e that can be switched between atmospheric pressure and vacuum. The load lock module 112e also connects the first processing station 111d and the carrier station 114b. The load lock chamber 113e is connected to the atmospheric transfer chamber 151b via a gate valve G102e. The load lock chamber 113e is connected to the vacuum transfer chamber 131d via a gate valve G103e.

[0165] A carrier C capable of accommodating a plurality of substrates G is carried in and out of the carrier station 114a. The carrier station 114a also has an atmospheric transfer chamber 151a whose interior is kept at atmospheric pressure. A transfer mechanism 152a for transferring the substrates G is provided in the atmospheric transfer chamber 151a. The transfer mechanism 152a transfers the substrates G in and out between the carrier C placed on a carrier placement table (not shown) and the load lock module 112a (specifically, the load lock chamber 113a). The transfer mechanism 152a has a transfer arm 152a1 for supporting the substrates G during transfer.

[0166] A carrier C capable of accommodating a plurality of substrates G is carried in and out of the carrier station 114b. The carrier station 114b also has an atmospheric transfer chamber 151b whose interior is kept at atmospheric pressure. A transfer mechanism 152b for transferring the substrates G is provided in the atmospheric transfer chamber 151b. The transfer mechanism 152b transfers the substrates G in and out between the carrier C placed on a carrier placement table (not shown) and a load lock module 112e (specifically, the load lock chamber 113e). The transfer mechanism 152b has a transfer arm 152b1 for supporting the substrates G during transfer.

[0167] The second processing station 115 includes an atmospheric transfer module 160 and a plurality of processing modules 170 (three in the example of FIG. 37).

[0168] The atmospheric transfer module 160 has an atmospheric transfer chamber 161 whose interior is kept at an atmospheric atmosphere. A transfer mechanism 162 for transferring a substrate G is provided in the atmospheric transfer chamber 161. The transfer mechanism 162 transfers the substrate G into and out of the processing module 170 (specifically, the atmospheric processing chamber 171). The transfer mechanism 162 has a transfer arm 162a for supporting the substrate G during transfer.

[0169] The processing module 170 has an atmospheric processing chamber 171 and performs a predetermined processing on the substrate G under atmospheric pressure. The atmospheric processing chamber 171 is connected to the atmospheric transfer chamber 161 via a gate valve G104. Each of the processing modules 170 performs each step of the photolithography process (resist formation step, exposure step, and development step).

[0170] The atmospheric transfer chambers 151a, 151b of the carrier stations 114a, 114b and the atmospheric transfer chamber 161 of the second processing station 115 may be connected by a pass module (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a, 151b and the atmospheric transfer chamber 161. The atmospheric transfer chamber 161 of the second processing station 115 may have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a, 151b and the atmospheric transfer chamber 161 by transferring a carrier C containing the substrate G.

[0171] The control unit 120 includes a computer equipped with a processor such as a CPU, a memory, and the like, and has a storage unit (not shown) for storing various information. The storage unit stores a program including instructions for a processing sequence executed by the second substrate processing system 101. The program may be recorded in a computer-readable storage medium and installed from the storage medium to the control unit 120. The storage medium may be temporary or non-temporary.

[0172] With this configuration, in the substrate processing method according to the first embodiment (see FIG. 1), the substrate G is transferred via the vacuum transfer chambers 131a to 131d in steps S102 to S104, steps S106 to S109, steps S111 to S114, steps S116 to S117, and steps S119 to S121. This allows the substrate G to be processed without being exposed to the atmosphere.

[0173] In the substrate processing method according to the second embodiment (see FIG. 17), the substrate G is transferred through the vacuum transfer chambers 131a to 131d in steps S204 to S207, steps S209 to S212, steps S214 to S217, and steps S219 to S222. This allows the substrate G to be processed without being exposed to the atmosphere.

[0174] That is, the first processing station 111a-d includes a vacuum processing chamber 141b for performing a process for forming a light-emitting layer, a vacuum processing chamber 141c for performing a process for forming a cathode electrode and a wiring layer, a vacuum processing chamber 141d for performing a process for forming a sealing layer, a vacuum processing chamber 141a for performing an etching process, and vacuum transfer chambers 131a-d connecting them. The substrate G on which the mask is formed is transferred from the load lock chamber 113a to the first processing station 111a. First, the substrate G is transferred to the vacuum processing chamber 141a for performing an etching process, and an etching process (e.g., step S106) is performed. Next, the substrate G is transferred via the vacuum transfer chamber 131b to the vacuum processing chamber 141b for performing a process for forming a light-emitting layer, and a process for forming a light-emitting layer (e.g., step S107) is performed. Furthermore, the substrate G is transferred via the vacuum transfer chamber 131c to the vacuum processing chamber 141c for performing a process for forming a cathode electrode layer, and a process for forming a cathode electrode layer (e.g., step S108) is performed. Then, the substrate G is transferred via the vacuum transfer chamber 131d to the vacuum processing chamber 141d where a sealing layer formation process (e.g., step S109) is performed. Thereafter, the substrate G is transferred out of the load lock chamber 113e. Note that, although the substrate G is transferred in from the load lock chamber 113a in this embodiment, it may be transferred in and out from either the load lock chamber 113a or 113e.

[0175] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0176] 1. First Substrate Processing System 101 Second substrate processing system 11, 111a~111d First Processing Station 12,112a~112e Load lock module 13,113a~113e Load lock chamber 14,114a~114b Career Station 15,115 Second Processing Station 20,120 Control section 30, 130a~130d Vacuum transport module 31, 131a~131d Vacuum transfer chamber 32, 132a~132d Transport mechanism 32a, 132a1~132d1 Transport arm 40a, 40b, 140a to 140d Processing module 41a, 41b, 141a to 141d Vacuum processing chamber 51, 151a~151b Atmospheric transport chamber 52, 152a~152b Conveyor mechanism 52a, 152a1~152b1 Transport arm 53 Carrier placement stand 60,160 Atmospheric Transport Module 61,161 Atmospheric transport chamber 62,162 Transport mechanism 62a,162a Transport arm 70,170 Processing Modules 71,171 Air treatment room G1~G4, G101a~G104 Gate valves G board C Career 300 Base material 310 Electrode Array 311 First anode electrode 312 Second anode electrode 313 Third Anode Electrode 321 First light-emitting layer 322 Second light-emitting layer 323 Third luminous layer 331 First cathode electrode 332 Second cathode electrode 333 3rd cathode electrode 331c~333c Contact hole 341 First sealing layer 342 Second sealing layer 343 3rd sealing layer 344 4th sealing layer 345 5th sealing layer 351 First Mask 352 2nd Mask 353 3rd Mask 354 4th Mask 360 wiring layer 400 Base material 410 Electrode Array 411 First anode electrode (first electrode) 412 Second anode electrode (second electrode) 413 3rd Anode Electrode 421 First light-emitting layer 422 Second light-emitting layer 423 Third luminous layer 431 First cathode electrode 432 Second cathode electrode 433 3rd cathode electrode 431c~433c Exposed part 441 First sealing layer 441a~441c opening 442 Second sealing layer 443 3rd sealing layer 444 4th sealing layer 445 5th sealing layer 451 First Mask 452 2nd Mask 453 3rd Mask 454 4th Mask 460 wiring layer

Claims

1. (A) providing a substrate having an electrode array with a plurality of electrodes disposed on a surface of the substrate; (B) forming a light-emitting layer, an electrode layer, and a sealing layer over the entire electrode array; (C) forming a mask on the sealing layer having a first thickness on one type of electrodes of the plurality of electrodes; (D) performing an etching process on the substrate using the mask to form a laminate in which the one type of electrode, the light-emitting layer, the electrode layer, and the sealing layer are laminated. A method for processing a substrate.

2. The step (C) is forming the mask only on the one type of electrode; The method of claim 1 .

3. After the step (A) and before the step (B), (E) forming a first sealing layer having an opening at a position corresponding to a first type of electrode among the plurality of electrodes; The step (B) comprises: forming a light-emitting layer, an electrode layer, and a second sealing layer over the entire electrode array; The step (C) is forming a mask on the second sealing layer, the mask having the first thickness over the first type of electrodes, an opening over a second type of electrode among the plurality of electrodes, and a second thickness less than the first thickness over the other electrodes; The step (D) is forming a laminate in which the first type of electrode, the light emitting layer, the electrode layer, and the second sealing layer are laminated, and forming an opening in the first sealing layer at a position corresponding to the second type of electrode; The method of claim 1 .

4. Repeating steps (B) to (D). The substrate processing method according to claim 1 .

5. The electrode array includes three types of electrodes. The substrate processing method according to claim 1 .

6. The three types of electrodes include an electrode of the stack that emits red light, an electrode of the stack that emits blue light, and an electrode of the stack that emits green light. The substrate processing method according to claim 5 .

7. The mask is a photoresist mask. The substrate processing method according to claim 1 .

8. The step (D) removing the second sealing layer, the electrode layer, and the light-emitting layer in an area where the mask has a thickness of the second thickness; removing the second sealing layer, the electrode layer, the light-emitting layer, and the first sealing layer in an area having an opening in the mask; The substrate processing method according to claim 3 .

9. A substrate processing apparatus for processing a substrate having an electrode array in which a plurality of electrodes are arranged on a substrate surface, a first light-emitting layer, a first electrode layer, and a first sealing layer laminated on the substrate surface, and a mask on the first sealing layer on one type of electrode among the plurality of electrodes, an etching module that performs an etching process on the substrate using the mask to form a stacked body in which the one type of electrode, the first light-emitting layer, the first electrode layer, and the first sealing layer are stacked; a light emitting layer forming processing module that performs a second light emitting layer forming processing on the substrate that has been subjected to the etching processing; an electrode layer forming processing module that performs a forming process of a second electrode layer on the substrate on which the second light emitting layer is formed; a sealing layer forming processing module that performs a second sealing layer forming processing on the substrate on which the second electrode layer is formed; a vacuum transfer module connecting the etching module, the light emitting layer forming module, and the sealing layer forming module. Substrate processing equipment.

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