Light-emitting device and manufacturing method of the same

Abstract

To provide a light-emitting device by which light can be taken out to the outside from the light-emitting device in even higher light flux, and a manufacturing method in which the light-emitting device can be easily manufactured.SOLUTION: A light-emitting device has a substrate 1, a light-emitting element 2, a semiconductor element 3, a translucent member 4, a first coating member 5, and a second coating member 6. The first coating member 5 includes a first resin 5A and a first reflection member 5B, a distance between the semiconductor element 3 and the translucent member 4 in a horizontal direction to the substrate 1 is 30 μm or more and 70 μm or less. Between the semiconductor element 3 and the light-emitting element 2, the first coating member 5 has a concentration difference of the first reflection member 5B in a vertical direction to the substrate 1. Regarding a concentration difference of the first reflection member 5B, in the case where the first coating member 5 is equally divided into three in a vertical direction between the semiconductor element 3 and the light-emitting element 2, the concentration of the first reflection member 5B in the lower 1 / 3 is 1.5 times or more and 20 times or less to the concentration of the first reflection member 5B in the upper 1 / 3.SELECTED DRAWING: Figure 1B

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device and a method for manufacturing the same.

Background Art

[0002] Conventionally, in order to improve the external light extraction efficiency in a light-emitting device, a method has been proposed in which a light reflection or light scattering material is more uniformly dispersed in a resin for encapsulating a light-emitting element, or light reflection or light scattering materials having different particle diameters are arranged around the light-emitting element and a protective element (see, for example, Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment according to the present invention aims to provide a light-emitting device capable of extracting light with a higher luminous flux to the outside and a manufacturing method capable of easily manufacturing the light-emitting device.

Means for Solving the Problems

[0005] This application includes the following inventions. The light-emitting device according to the present disclosure includes a substrate, a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, a light-transmitting member disposed on the upper surface or above the light-emitting element, a first covering member disposed on the side surface or side of the light-emitting element and the side surface or side of the semiconductor element, and a second covering member disposed on the side surface or side of the light-transmitting member and the upper surface or above the semiconductor element. The first covering member includes a first resin and a first reflecting member. The distance between the semiconductor element and the light-transmitting member in the horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less. Between the semiconductor element and the light-emitting element, the first covering member has a concentration difference of the first reflecting member in the vertical direction with respect to the substrate. When the first covering member is vertically trisected between the semiconductor element and the light-emitting element, the concentration of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 20 times or less than the concentration of the first reflecting member in the upper 1 / 3. The manufacturing method of a light-emitting device according to the present disclosure includes a substrate, a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, and a light-transmitting member disposed on the upper surface or above the light-emitting element, and prepares an intermediate body in which a distance between the semiconductor element and the light-transmitting member in a horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less. Applying a first covering member including a first resin and a first reflecting member from above the semiconductor element; applying a centrifugal force in a vertical direction with respect to the substrate to a side surface or side of the light-emitting element and a side surface or side of the semiconductor element where the first covering member is disposed, and causing the first reflecting member to settle toward the substrate side, and when the first covering member is vertically trisected between the semiconductor element and the light-emitting element, giving a vertical concentration difference to the first reflecting member such that a concentration of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 20 times or less than a concentration of the first reflecting member in the upper 1 / 3; curing the first covering member in which the first reflecting member has settled; applying a second covering member including a second resin and a second reflecting member to the cured first covering member, or to the upper surface or above the semiconductor element, and disposing the second covering member on a side surface or side of the light-transmitting member and on the upper surface or above the semiconductor element; and curing the second covering member. The light-emitting device according to the present disclosure includes a substrate, a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, a light-transmitting member disposed on the upper surface or above the light-emitting element, a first covering member disposed on the side surface or side of the light-emitting element and the side surface or side of the semiconductor element, and a second covering member disposed on the side surface or side of the light-transmitting member and the upper surface or above the semiconductor element. The first covering member includes a first resin and a first reflecting member. The distance between the semiconductor element and the light-transmitting member in the horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less. Between the semiconductor element and the light-emitting element, the first covering member has a concentration difference of the first reflecting member in the vertical direction with respect to the substrate. When the first covering member is vertically trisected between the semiconductor element and the light-emitting element, the number of particles of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 10 times or less the number of particles of the first reflecting member in the upper 1 / 3.

Advantages of the Invention

[0006] According to the light-emitting device of the present disclosure, light can be extracted to the outside with a higher luminous flux. Further, according to the manufacturing method of the light-emitting device of the present invention, the light-emitting device according to the present disclosure can be easily manufactured.

Brief Description of the Drawings

[0007]

Figure 1A

Figure 1B

Figure 2A

Figure 2B

Figure 3

Figure 4A

Figure 4B

Figure 4C

Figure 4D

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the embodiments described below are for embodying the technical idea of the present invention, and the present invention is not limited to the following unless specifically described. The sizes and positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. The horizontal direction refers to the direction parallel to one surface of the substrate in a top view, in other words, the direction parallel to the X-Y plane in which one surface of the substrate extends, and the vertical direction refers to the direction perpendicular to the substrate, in other words, the direction parallel to the Z-axis direction. The cross-sectional view may use an end view showing only the cut surface. Also, in each embodiment, members having the same name as those in other embodiments represent the same or corresponding members. Such members can adopt the materials, sizes, etc. mentioned in other embodiments unless otherwise specified.

[0009] Embodiment 1: Light-Emitting Device The light-emitting device according to Embodiment 1 will be described with reference to the drawings. FIG. 1A is a schematic top view of the light-emitting device according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the line 1B-1B in FIG. 1A. FIG. 2A is a top view of the substrate used in the light-emitting device according to an embodiment of the present invention. FIG. 2B is a bottom view of the substrate used in the light-emitting device according to an embodiment of the present invention. The light-emitting device 10 according to Embodiment 1 includes a substrate 1, a light-emitting element 2 disposed on the substrate 1, a semiconductor element 3 disposed on the substrate 1 and adjacent to the light-emitting element 2, a light-transmitting member 4 disposed on the upper surface or above the light-emitting element 2, a first covering member 5 disposed on the side surface or side of the light-emitting element 2 and on the side surface or side of the semiconductor element 3, and a second covering member 6 disposed on the side surface or side of the light-transmitting member 4 and on the upper surface or above the semiconductor element 3. The first covering member 5 includes a first resin 5A and a first reflecting member 5B. The distance D between the semiconductor element 3 and the light-transmitting member 4 in the horizontal direction with respect to the substrate 1 is 30 μm or more and 70 μm or less. Between the semiconductor element 3 and the light-emitting element 2, the first covering member 5 has a density difference of the first reflecting member 5B in the vertical direction with respect to the substrate 1. Also, when the first covering member 5 is trisected in the height direction between the semiconductor element 3 and the light-emitting element 2, the density of the first reflecting member 5B in the lower 1 / 3 (region 5L) is 1.5 times or more and 20 times or less the density of the first reflecting member 5B in the upper 1 / 3 (region 5U). The horizontal direction with respect to the substrate 1 refers to the direction in which the arrows X and Y in FIG. 1A extend, here the direction of arrow X, and the vertical direction with respect to the substrate refers to the direction perpendicular to the horizontal direction, that is, the direction parallel to the Z-axis direction in FIG. 1B. The density (concentration) of the first reflecting member 5B in the first covering member 5 can be measured by a method of measuring the mass of the first reflecting member 5B per unit volume in the first covering member 5. Also, the density (concentration) is the ratio of the mass of the first reflecting member 5B divided by the total mass of the first covering member 5, and can be expressed as a mass percentage (weight percent). Also, instead of the density (concentration), the number of particles of the first reflecting member 5B per unit area can be measured and used as the density difference. When the first covering member 5 is trisected in the height direction between the semiconductor element 3 and the light-emitting element 2, the number of particles of the first reflecting member 5B in the lower 1 / 3 (region 5L) is 1.5 times or more and 10 times or less the number of particles of the first reflecting member 5B in the upper 1 / 3 (region 5U). For example, in a cross-sectional view of the first covering member 5 cut in the vertical direction with respect to the substrate 1, the number of particles of the first reflecting member 5B per unit area is measured. The average particle diameter D50 of the first reflecting member 5B is 1 μm or more. Thus, between the semiconductor element 3 and the light-emitting element 2, in the first covering member 5, the first reflecting member 5B has a density difference in the direction perpendicular to the substrate 1. That is, by making the first reflecting member 5B have a high density below the light-emitting element 2, among the light emitted from the light-emitting element 2, the light traveling downward or laterally can be more effectively reflected upward by the first reflecting member 5B, and high luminous flux light can be efficiently extracted from the light-emitting device 10.

[0010] (Substrate 1) The substrate 1 is a member that supports the light-emitting element 2 and the like. The substrate 1 has at least two wirings 1a on its surface that are electrically connected to the electrodes of electronic components such as the light-emitting element 2 and the semiconductor element 3. As the main material of the substrate 1, an insulating material that is difficult for the light from the light-emitting element 2 and the external light to transmit is preferable. Examples of such materials include ceramics such as aluminum oxide, aluminum nitride, and silicon nitride, and resins such as phenolic resin, epoxy resin, silicone resin, polyimide resin, bismaleimide triazine resin (BT resin), and polyphthalamide resin. When using a resin, inorganic fillers such as glass fiber, titanium oxide, aluminum oxide, aluminum nitride, silicon oxide, and silicon nitride may be mixed into the resin as necessary. Thereby, improvement of mechanical strength, reduction of thermal expansion coefficient, and improvement of light reflectance can be achieved. The substrate 1 may be one in which wirings are formed on an insulating member, or one in which an insulating material is disposed on the surface of a metal member and wirings are formed on the insulating material. The wiring 1a is formed in a predetermined pattern on an insulating member or an insulating material. Examples of the material of the wiring 1a include metals such as gold, silver, copper, iron, titanium, palladium, nickel, chromium, platinum, tungsten, and aluminum, or alloys containing these. Among them, those having gold disposed on the outermost surface are preferable. The wiring 1a can be formed by electrolytic plating, electroless plating, vapor deposition, sputtering, or the like. The wiring 1a is preferably also disposed on the back surface of the substrate 1 through vias formed in the thickness direction of the substrate 1.

[0011] (Light-emitting element 2) The light-emitting element 2 is disposed on the substrate 1, particularly on the wiring 1a. The light-emitting element 2 is preferably a light-emitting diode. The light-emitting element 2 can be selected with an arbitrary wavelength. For example, as blue and green light-emitting elements, those using nitride semiconductors (In X Al Y Ga 1-X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), ZnSe, GaP can be mentioned. Also, as a red light-emitting element, GaAlAs, AlInGaP, etc. can be used. Furthermore, semiconductor light-emitting elements made of other materials may also be used. The emission color, size, number, etc. of the light-emitting element to be used can be appropriately selected according to the purpose. When the light-emitting device 10 has a phosphor, the above-mentioned nitride semiconductor capable of emitting short wavelengths that can efficiently excite the phosphor is preferable. The top view shape of the light-emitting element 2 can take various shapes, and for example, a rectangular shape can be mentioned. The light-emitting element 2 is formed, for example, by laminating a nitride semiconductor layer on a translucent support substrate, and the support substrate side becomes the main light extraction surface of the light-emitting element 2. The support substrate may be removed, for example, by polishing, laser lift-off, etc. The light-emitting element 2 preferably has two or more electrodes 2a on the same surface side, that is, the surface opposite to the light-emitting surface. The arrangement of the electrodes 2a can be appropriately set according to the target light-emitting device.

[0012] The light-emitting element 2 is disposed on the substrate 1. Disposing the light-emitting element 2 on the substrate 1 includes cases where the light-emitting element 2 is directly or indirectly disposed on the upper surface of the substrate 1 via a joining member. Here, the light-emitting element 2 is placed on the substrate 1 via a plurality of first joining members with the surface on which the electrode 2a is formed facing the substrate 1 as the lower surface. Specifically, the electrodes 2a of the light-emitting element 2 are each connected to the wiring 1a provided on the substrate 1 via a first joining member. Examples of the first bonding member include bumps made of, for example, Au, Ag, Cu, or alloys containing these, solders such as tin-bismuth, tin-copper, tin-silver, and gold-tin, eutectic alloys such as alloys mainly composed of Au and Sn, alloys mainly composed of Au and Si, alloys mainly composed of Au and Ge, or conductive pastes such as Au, Ag, Pd, anisotropic conductive materials such as ACP and ACF, brazing materials of low melting point metals, conductive adhesives combining these, conductive composite adhesives, etc. Among them, it is preferable to use bumps from the viewpoint of positional accuracy. Also, from the viewpoint of heat dissipation, it is preferable that the electrodes 2a are each connected to the substrate 1 via a plurality of bumps. Since the light-emitting element 2 is connected onto the substrate 1 using the first bonding member, the contact area with the substrate can be increased and the connection resistance can be lowered compared to a light-emitting element connected by a metal wire or the like. For example, when the light-emitting element 2 is joined to the wiring 1a by a first bonding member such as a bump, a gap corresponding to the thickness of the first bonding member is formed between the light-emitting element 2 and the substrate 1 and between the plurality of first bonding members. At this time, while arranging the first covering member 5 described later in this gap, in particular, by arranging the first reflecting member 5B included in the first covering member 5 at a high density, the light traveling from the light-emitting element 2 toward the substrate 1 can be reflected more efficiently and can be efficiently extracted to the outside, particularly upward.

[0013] (Semiconductor element 3) The semiconductor element 3 is arranged on the substrate 1 so as to be adjacent to the light-emitting element 2. The semiconductor element 3 is an electronic component other than the light-emitting element 2 arranged in the light-emitting device 10, and examples thereof include protective elements such as capacitors, varistors, Zener diodes, and bridge diodes. The semiconductor element 3 is arranged adjacent to the light-emitting element 2 with a separation. It is preferable that the semiconductor element 3 is placed on the upper surface of the substrate 1 via a second bonding member. For example, in the horizontal direction with respect to the substrate 1, the distance between the semiconductor element 3 and the light-emitting element 2 may be separated by 10 μm or more and 500 μm or less, preferably separated by 20 μm or more and 250 μm or less, and more preferably separated by 25 μm or more and 150 μm or less. The shape of the semiconductor element 3 in a top view can take various shapes, and for example, a rectangular shape can be mentioned. The semiconductor element 3 is preferably arranged such that the side surface 3S of the semiconductor element 3 faces the side surface 2S of the light-emitting element 2. Thereby, it can be arranged close to the semiconductor element 3 and the light-emitting element 2, and a compact light-emitting device 10 can be obtained. The semiconductor element 3 is preferably arranged at a position lower than the light-emitting element 2 so as not to block the light from the light-emitting element 2. That is, the upper surface of the semiconductor element 3 is preferably at a position lower than the upper surface of the light-emitting element 2.

[0014] (Light-transmissive member 4) The light-transmissive member 4 is arranged on the upper surface or above the light-emitting element 2, that is, on the upper surface or above which is the main light extraction surface of the light-emitting element 2. The light-transmissive member 4 is a member that transmits the light emitted from the light-emitting element 2. Examples of the light-transmissive member 4 include those that transmit 60% or more of the light from the light-emitting element 2, for example, light in the range of 320 nm or more and 850 nm or less, and those that transmit 70% or more of the light are preferred. Also, the light-transmissive member 4 can be in various forms such as a plate-shaped member with one or both surfaces being flat, a plate-shaped member with unevenness on one or both surfaces, etc. Among them, the surface or region of the light-transmissive member 4 facing the light-emitting element 2 is preferably flat, and it is more preferable that both surfaces of the light-transmissive member 4 are flat. That is, the lower surface of the light-transmissive member 4 is preferably flat. The light-transmissive member 4 and the light-emitting element 2 are preferably parallel to each other. Specifically, the light-transmissive member 4 has an upper surface 4U, a lower surface 4L on the opposite side of the upper surface 4U, and a side surface 4S arranged between the upper and lower surfaces. The upper surface 4U corresponds to the light exit surface of the light-emitting device 10. The lower surface 4L is joined to the upper surface which is the main light extraction surface of the light-emitting element 2. The areas of the upper surface and the lower surface of the light-transmissive member 4 may be the same, but the upper surface 4U preferably has an area smaller than the lower surface 4L. Thereby, the light incident from the light-emitting element 2 is narrowed down, and by reducing the light-emitting area, a light-emitting device 10 with a high beam divergence can be obtained. Also, a light-emitting device 10 that emits higher brightness and higher luminous flux light can be obtained. The light-transmissive member 4 may have the same size and shape as the upper surface of the light-emitting element 2, or may be larger, smaller, similar, or of a different shape than the upper surface of the light-emitting element 2. Among these, it is preferable that the outer edge of the lower surface 4L of the light-transmissive member 4 coincides with the outer edge of the upper surface of the light-emitting element 2, or that the entire outer edge of the lower surface 4L is of a size and shape that is disposed outside the outer edge of the upper surface of the light-emitting element 2. Note that the joining of the upper surface of the light-emitting element 2 and the lower surface 4L of the light-transmissive member 4 may be performed by direct joining, for example, without using an adhesive, but it is preferably performed using a light-transmissive joining member 7. In this case, the joining member 7 may be disposed so as to cover a part or the entire lower surface 4L of the upper surface of the light-emitting element 2 and the lower surface 4L of the light-transmissive member 4, or may be disposed so that a part or all of the side surface 2S of the light-emitting element 2 comes into contact with the joining member 7. When the joining member 7 is disposed on a part or all of the side surface 2S of the light-emitting element 2, it is preferable that the thickness of the joining member 7 in the horizontal direction becomes thinner from the upper surface of the light-emitting element 2 downward, and it is more preferable that the thickness becomes smaller downward so as to be inclined or to form a curve in a cross-sectional view in the vertical direction.

[0015] The side surface 4S of the light-transmissive member 4 may be a surface perpendicular to the upper surface 4U or the lower surface 4L, or may be an inclined surface inclined with respect to the upper surface 4U or the lower surface 4L. Further, the light-transmissive member 4 may have a step that is narrow at the upper surface 4U and wide at the lower surface 4L. In this case, the light-transmissive member 4 may have a first side surface continuous with the lower surface, a second side surface continuous with the upper surface and disposed inside the first side surface, and a surface disposed between the first side surface and the second side surface. This surface may be parallel or inclined with respect to the upper surface or the lower surface. Examples of the shapes of the upper surface and the lower surface of the light-transmissive member 4 in a top view include various shapes such as polygons such as triangles and quadrilaterals, circles, and ellipses. Among these, it is preferable to make it rectangular in consideration of ease of processing and a shape corresponding to the shape of the light-emitting element.

[0016] It is preferable that the distance D between the light-transmitting member 4 and the semiconductor element 3 in the horizontal direction with respect to the substrate 1 is 30 μm or more and 70 μm or less, more preferably 35 μm or more and 65 μm or less, and even more preferably 40 μm or more and 65 μm or less. Thereby, the light-emitting device can be miniaturized. In addition, it is possible to suppress the light emitted from the light-transmitting member 4 from being absorbed by the semiconductor element 3 and the light flux from decreasing. Furthermore, when arranging the light-transmitting member 4, it is possible to prevent a collet or the like from contacting the semiconductor element 3. The height of the upper surface of the light-transmitting member 4 and the upper surface of the semiconductor element 3 from the substrate 1 does not have to be the same, and it is preferable that the upper surface of the light-transmitting member 4 is higher than the upper surface of the semiconductor element 3. This is because it is preferable that the light emitted from the light-emitting element 2 and transmitted through the light-transmitting member 4 is not blocked by the semiconductor element 3. Therefore, the horizontal distance D between the light-transmitting member 4 and the semiconductor element 3 refers to the distance in the top view of the light-emitting device 10.

[0017] The light-transmitting member 4 may be formed of any of inorganic materials such as glass, ceramics, and sapphire, organic materials such as resins or hybrid resins including one or more of silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, acrylic resins, phenolic resins, and fluororesins. The light-transmitting member 4 may contain light-diffusing materials or phosphor particles in the above-described materials. Further, the light-transmitting member 4 may be a sintered body of a phosphor by sintering phosphor particles, or the phosphor particles may be fixed to each other. The sintered body of the phosphor or the fixed matter of the phosphor is preferable because it has higher heat resistance, light resistance, etc. and higher reliability than that using a resin. Further, it may be a formed body of resin, glass, ceramics, etc. having a phosphor layer or a resin layer containing a phosphor formed on the surface. The thickness of the light-transmitting member 4 may be constant throughout, or a part thereof may be thin or thick. The thickness of the light-transmitting member 4 can be, for example, in the range of 50 μm or more and 300 μm or less. As the phosphor, one that can be excited by the light emitted from the light-emitting element 2 is used. For example, as phosphors that can be excited by a blue light-emitting element or an ultraviolet light-emitting element, yttrium aluminum garnet-based phosphors (YAG:Ce) activated with cerium, lutetium aluminum garnet-based phosphors (LAG:Ce) activated with cerium, nitrogen-containing calcium aluminosilicate-based phosphors (CaO-Al 2 O 3 -SiO 2 :Eu) activated with europium, silicate-based phosphors ((Sr,Ba) 2 SiO 4 :Eu) activated with europium, β-sialon phosphors, CASN-based phosphors represented by CaAlSiN 3 :Eu, nitride-based phosphors such as SCASN-based phosphors represented by (Sr,Ca)AlSiN 3 :Eu, K 2 SiF 6 :Mn, i.e., KSF-based phosphors, sulfide-based phosphors, quantum dot phosphors, etc. can be mentioned. By combining these phosphors with a blue light-emitting element or an ultraviolet light-emitting element, a light-emitting device having a desired emission color, for example, a light-emitting device that emits white light can be manufactured. As the light diffusing material, any of those commonly used in the art, such as fillers like silicon oxide, titanium oxide, zirconium oxide, magnesium oxide, aluminum nitride, silicon nitride, aerosil, glass, glass fiber, or wollastonite, may be used. As the joining member 7, among the above-described resins, for example, those containing an organic material containing a light-transmissive resin, those containing the first resin described later, etc. can be mentioned.

[0018] (First covering member 5) The first covering member 5 is disposed on the side surface or the side of the light-emitting element 2. When the first covering member 5 is disposed on the side surface of the light-emitting element 2, it means that the first covering member 5 is disposed in direct contact with the side surface of the light-emitting element 2. When the first covering member 5 is disposed on the side of the light-emitting element 2, it means that a joining member 7 is disposed on the side surface of the light-emitting element 2, and the first covering member 5 is disposed in a state where it is not in direct contact with the side surface of the light-emitting element 2. Further, the first covering member 5 is disposed on the side surface or the side of the semiconductor element 3. Similarly, when the first covering member 5 is disposed on the side surface of the semiconductor element 3, it means that the first covering member 5 is disposed in direct contact with the side surface of the semiconductor element 3. When the first covering member 5 is disposed on the side of the semiconductor element 3, it means that a film or the like is formed on the side surface of the semiconductor element 3, and the first covering member 5 is disposed in a state where it is not in direct contact with the side surface of the semiconductor element 3. When the first covering member 5 is in contact with the side surface of the light-emitting element 2 and / or the semiconductor element 3, it does not have to be in contact with the entire side surface, and it is sufficient that at least a part is in contact. The first covering member 5 is preferably disposed between the light-emitting element 2 and the substrate 1. For example, it is preferably disposed in contact with the electrode 2a of the light-emitting element 2 and the wiring 1a of the substrate 1. Thereby, the first reflecting member 5B included in the first covering member 5 described later can be disposed at a high density not only around the light-emitting element 2 but also downward. As a result, the light emitted downward from the light-emitting element 2 can be effectively reflected, and the light extraction efficiency can be improved. Further, the heat from the light-emitting element 2 can be directly transmitted to the substrate 1 through the first covering member 5, and the heat dissipation can be enhanced. Further, the first covering member 5 may be disposed between the semiconductor element 3 and the substrate 1. The first covering member 5 preferably does not contact the side surface of the light-transmissive member 4, but it may contact. In this case, in the thickness direction of the light-transmissive member 4 (the Z direction in FIG. 1B), it is preferably in contact with 1 / 8 or less of the side surface of the light-transmissive member 4. Thereby, the light emitted from the light-emitting element 2 can be efficiently extracted more upward.

[0019] The first covering member 5 includes a first resin 5A and a first reflecting member 5B. The first resin 5A is preferably a light-transmissive resin, but a non-light-transmissive resin can also be used. As the resin, either a thermosetting resin or a thermoplastic resin may be used. Specifically, examples include epoxy resin, silicone resin, modified epoxy resin, modified silicone resin, polyester resin, polyimide resin, modified polyimide resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, polybutylene terephthalate (PBT) resin, and the like. Among them, it is preferable to use a thermosetting resin such as an epoxy resin or a silicone resin that is excellent in heat resistance and light resistance. As the first reflective member 5B, it is preferable to use a member that is difficult to absorb the light from the light-emitting element 2 and has a large refractive index difference with respect to the material of the first resin 5A. Examples of such a first reflective member 5B include titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and the like. In the first coating member 5, the content of the first reflective member 5B is, as a whole, 35% by mass or more and 55% by mass or less with respect to the total mass of 100% of the first resin 5A and the first reflective member 5B. Further, in addition to the first reflective member 5B, the first coating member 5 may contain a wavelength conversion substance for adjusting the color tone, a pigment, a filler for adjusting the viscosity, and the like. The average particle diameter D50 of the first reflective member 5B is preferably larger than the wavelength of the light emitted from the light-emitting element, and examples thereof include 1 μm or more and 100 μm or less.

[0020] The first covering member 5 has different concentrations (densities) of the first reflecting member 5B throughout its entirety. That is, although the first reflecting member 5B is disposed between the semiconductor element 3 and the light-emitting element 2, there is a concentration difference of the first reflecting member 5B in the first covering member 5 in the direction perpendicular to the substrate 1 between the semiconductor element 3 and the light-emitting element 2. For example, the concentration difference of the first reflecting member 5B is such that the concentration is high on the substrate 1 side and low on the opposite side (upper surface side). In particular, in the region between the semiconductor element 3 and the light-emitting element 2, when the first covering member 5 is vertically trisected, it is preferable that the concentration of the first reflecting member 5B in the lower 1 / 3 region 5L is 1.5 times or more and 20 times or less, more preferably 2 times or more and 12 times or less, and even more preferably 4 times or more and 10 times or less, relative to the concentration of the first reflecting member 5B in the upper 1 / 3 region 5U. By having such a concentration difference, among the light emitted from the light-emitting element 2, the light traveling in the direction of the substrate 1 can be effectively reflected upward or laterally by the first reflecting member 5B, and for the light traveling laterally from the light-emitting element 2, the light leaking laterally can be reduced and reflected upward. As a result, the luminous flux extracted from the upper surface of the light-emitting device 10 can be increased. In addition, in the region between the semiconductor element 3 and the light-emitting element 2, in regions other than the region 5L, the region 5U, and the region 5M sandwiched between the region 5L and the region 5U, which are obtained by vertically trisecting the first covering member 5, that is, on the substrate 1 and directly below the light-emitting element 2 and / or the semiconductor element 3, in the region where the light-emitting element 2 and the semiconductor element 3 are not disposed, the first covering member 5 may have a concentration (density) distribution of the first reflecting member 5B. For example, the first covering member 5 disposed directly below the light-emitting element 2, that is, between the light-emitting element 2 and the substrate 1, may have a different concentration of the first reflecting member 5B from that of the region 5U and the region 5M, and it is preferable that the concentration is high. Specifically, it is preferable that the concentration of the first reflecting member 5B in the first covering member 5 disposed between the light-emitting element 2 and the substrate 1 is equivalent to that of the region 5L. Thereby, as described above, among the light emitted from the light-emitting element 2, the light traveling toward the substrate 1 can be effectively reflected by the first reflecting member 5B, and as a result, the light extraction from the upper surface of the light-emitting device 10 can be improved. In addition, the density difference of the first reflecting member 5B exists not only in the vertical direction but also in the horizontal direction of the substrate 1. Specifically, although it depends on the upper surface shape of the substrate 1, in a top view, the density of the first reflecting member 5B in the region on the substrate 1 where the light-emitting element 2 and the semiconductor element 3 are not arranged may be different from that in the region between the semiconductor element 3 and the light-emitting element 2. That is, the density of the first reflecting member 5B in the region on the substrate where the light-emitting element 2 and the semiconductor element 3 are not arranged may be lower than that in the region between the semiconductor element 3 and the light-emitting element 2, for example, any of the above-described regions 5U, 5M, and 5L. For example, in a top view, the region where the light-emitting element 2 and the semiconductor element 3 are not arranged may have a low-density portion including the first reflecting member 5B having a lower density than the density of the first reflecting member 5B between the semiconductor element 3 and the light-emitting element 2. The density of the first reflecting member 5B in this low-density portion of the first covering member 5 may be 0.5 mass% or more and 8 mass% or less. Here, as the region on the substrate 1 where the light-emitting element 2 and the semiconductor element 3 are not arranged, when the substrate 1 is rectangular in a top view, the vicinity of the end portion 1E1 on the substrate 1 on the side opposite to the semiconductor element 3 of the light-emitting element 2, the end portions 1E2 and 1E3 on the substrate 1 adjacent to the end portion 1E1 and adjacent to the light-emitting element 2, the vicinity of the end portion 1E4 on the substrate 1 on the side opposite to the light-emitting element 2 of the semiconductor element 3, or the corner portion of the substrate 1 (region 5T in FIG. 1A) surrounded by the end portions 1E2 and 1E4 and the end portions 1E2 and 1E3 and adjacent to the semiconductor element 3 can be mentioned. Among them, it is preferable that the first covering member 5 has a low-density portion including the low-density first reflecting member 5B in the corner region 5T of the substrate 1. Here, the low-density first reflecting member 5B in the low-density portion is preferably lower in density than that between the semiconductor element 3 and the light-emitting element 2, more preferably lower in density than the regions 5M and 5L, and even more preferably lower in density than the region 5L. The density of the first reflecting member 5B in the region 5L is substantially equal to the density of the first reflecting member 5B directly below the light-emitting element 2. Note that the region 5T in FIG. 1A is schematic and corresponds to the region 5T in FIG. 4B.

[0021] (Second covering member 6) The second covering member 6 is disposed on the side surface or side of the light-transmitting member 4 and on the upper surface or above the semiconductor element 3. In this case, the second covering member 6 is preferably disposed in contact with the side surface 4S of the light-transmitting member 4 and the upper surface of the semiconductor element 3. Further, the second covering member 6 may be disposed in contact with a part of the joining member 7. In this case, it is preferable that the second covering member 6 is in contact with the joining member 7 above the upper surface of the light-emitting element 2. The second covering member 6 includes a second resin 6A and a second reflecting member 6B. Here, examples of the second resin 6A and the second reflecting member 6B are the same as those exemplified as the first resin 5A and the first reflecting member 5B, respectively. However, the second resin 6A may be the same as or different from the first resin 5A. Also, the second reflecting member 6B may be the same as or different from the first reflecting member 5B. In the second covering member 6, the content rate of the second reflecting member 6B is 15 mass% or more and 40 mass% or less with respect to the total mass of 100% of the second resin 6A and the second reflecting member 6B, preferably 15 mass% or more and 35 mass% or less, and more preferably 15 mass% or more and 30 mass% or less. Among them, the concentration of the second reflecting member 6B in the second covering member 6 is preferably the same as or lower than the concentration of the first reflecting member 5B in the region 5U in the upper 1 / 3 of the first covering member 5. In other words, the concentration of the second reflecting member 6B in the second covering member 6 is preferably 0.2 times or more and 1 time or less, and more preferably 0.4 times or more and 1 time or less, with respect to the concentration of the first reflecting member 5B in the region 5U in the upper 1 / 3 of the first covering member 5. As long as this concentration relationship is satisfied, the concentration of the second reflecting member 6B in the second covering member 6 may have a concentration difference in the vertical direction, but is preferably substantially the same. It is preferably disposed above the low-concentration portion (region 5T) of the second covering member 6 and the first covering member 5 and at the same height as the upper surface 4U of the light-transmitting member 4. In other words, the upper surface of the second covering member 6 is preferably flush with the upper surface 4U of the light-transmitting member 4.

[0022] Embodiment 2: Method for manufacturing a light-emitting device A method for manufacturing a light-emitting device according to Embodiment 2 will be described with reference to the drawings. FIG. 3 is a flowchart showing a method for manufacturing a light-emitting device according to an embodiment of the present invention. FIG. 4A is a top view of an intermediate body in a method for manufacturing a light-emitting device according to an embodiment of the present invention. FIG. 4B is a schematic top view for explaining the application of a first coating member in a method for manufacturing a light-emitting device according to an embodiment of the present invention. FIG. 4C is a schematic end view taken along line 4C-4C in FIG. 4B. FIG. 4D is a schematic end view corresponding to FIG. 4C after centrifugal force is applied in a method for manufacturing a light-emitting device according to an embodiment of the present invention. The method for manufacturing a light-emitting device according to this embodiment first prepares an intermediate body including a substrate, a light-emitting element, a semiconductor element, and a light-transmitting member (S1), applies a first coating member including a first resin and a first reflective member from above the semiconductor element (S2), applies a centrifugal force to the first coating member in a direction perpendicular to the substrate to cause the first reflective member to settle toward the substrate side, and creates a concentration difference in the first reflective member in the vertical direction of the first coating member between the semiconductor element and the light-emitting element (S3), cures the first coating member in which the first reflective member has settled (S4), applies a second coating member including a second resin and a second reflective member on the cured first coating member (S5), and cures the second coating member (S6). In this way, after applying the first coating member 5a including the first resin 5A and the first reflective member 5B, by a simple method of applying a centrifugal force to the first coating member 5a in a direction perpendicular to the substrate 1, the first reflective member 5B can be easily settled toward the substrate 1 side, and a concentration difference can be created in the first reflective member 5B in the vertical direction of the first coating member 5 between the semiconductor element 3 and the light-emitting element 2. As a result, as described above, the first reflective member 5B can be easily arranged at a high density below the light-emitting element 2 or on the upper surface of the substrate 1. As a result, among the light emitted from the light-emitting element 2, the light traveling toward the substrate 1 side can be more effectively reflected upward by the first reflective member 5B arranged at a high density, and a light-emitting device capable of efficiently extracting light with a high luminous flux can be efficiently manufactured.

[0023] (S1: Preparation of Intermediate Body) Prepare an intermediate body including a substrate 1, a light-emitting element 2 disposed on the substrate 1, a semiconductor element 3 disposed on the substrate 1 and adjacent to the light-emitting element 2, and a light-transmitting member 4 disposed on the upper surface or above the light-emitting element 2, wherein the distance between the semiconductor element 3 and the light-transmitting member 4 in the horizontal direction with respect to the substrate 1 is 30 μm or more and 70 μm or less. Specifically, first, prepare a substrate 1 having a wiring 1a (see FIGS. 2A and 2B). On this substrate 1, the light-emitting element 2 and the semiconductor element 3 are arranged adjacent to each other by a method known in the art. Note that the light-transmitting member 4 is arranged in advance on the upper surface or above the light-emitting element 2, and may be arranged on the substrate 1, or after the light-emitting element 2 is arranged on the substrate 1, the light-transmitting member 4 may be arranged on the upper surface or above the light-emitting element 2 using a joining member 7. In this case, the distance D between the semiconductor element 3 and the light-transmitting member 4 in the horizontal direction with respect to the substrate 1 is preferably 30 μm or more and 70 μm or less. As long as the distance D between the semiconductor element 3 and the light-transmitting member 4 is within the above range, the semiconductor element 3 may be arranged closer to the corner of the substrate 1. Further, the joining member 7 may be arranged at least between the upper surface of the light-emitting element 2 and the lower surface of the light-transmitting member 4, and further between a part or all of the side surface of the light-emitting element and the first covering member 5. In order to manufacture a plurality of light-emitting devices in a short time and simply, a plurality of light-emitting elements 2 and a plurality of semiconductor elements 3 may be arranged in a lattice pattern on the substrate 1 on a single flat plate, and after arranging the first covering member 5 and the like, they may be separated into individual light-emitting devices. In order to arrange a plurality of light-emitting devices in a matrix, an aggregate of substrates in which a plurality of the substrates shown in FIGS. 2A and 2B are arranged may be used.

[0024] (S2: Coating of the first covering member) Apply a first covering member 5a including a first resin 5A and a first reflecting member 5B from above the semiconductor element 3 onto the substrate 1 on which the semiconductor element 3 and the light-emitting element 2 are arranged. It is preferable to use the first covering member 5a containing the first reflecting member 5B in an amount of 35% by mass or more and 55% by mass or less. The first covering member 5a is applied, for example, from above the semiconductor element 3. Applying above the semiconductor element 3 includes not only directly above the semiconductor element 3 but also between the semiconductor element 3 and the light-emitting element 2 (region R in FIG. 4A) and between the light-emitting element 2 and the substrate 1. The applied first covering member 5a is more likely to move toward the light-emitting element 2 side via the side surface 3S of the semiconductor element 3. The first covering member 5a that has moved toward the light-emitting element 2 side further spreads by wetting between the lower surface of the light-emitting element 2 and the upper surface of the substrate 1, on the side surface 2S of the light-emitting element 2, etc., so that the first covering member 5a can be efficiently arranged between the lower surface of the light-emitting element 2 and the upper surface of the substrate 1 and around the light-emitting element 2 and the semiconductor element 3. In this case, by adjusting the amount of the first covering member 5a applied on the substrate 1, the first covering member 5a can be easily moved to the side opposite to the side facing the semiconductor element 3 along the side surface or the side of the light-emitting element 2 and between the light-emitting element 2 and the substrate. In particular, since the wiring 1a is arranged directly below the region where the semiconductor element 3 and the light-emitting element 2 are arranged, by using a material with high wettability to the resin material on the outermost surface of the wiring 1a, the first covering member 5a can be easily arranged around the light-emitting element 2. After applying the first covering member 5a, as shown in FIG. 4C, the upper surface of the first covering member 5a does not become flat, and there may be a creeping up on the side surface of the light-emitting element 2, the side surface of the semiconductor element 3, and the side surface of the light-transmitting member 4. Also, in the region where the wiring 1a on the substrate 1 is arranged and the light-emitting element 2 and the semiconductor element 3 are not arranged, due to the nature of the material used as the first covering member 5a, the first covering member 5a is difficult to spread by wetting, and the first covering member 5a is not arranged or is only thinly arranged. The first coating member 5a, at the time of coating, is in the range of 0.3 Pa·s or more and 30 Pa·s or less at room temperature (20 ± 5°C), preferably in the range of 0.5 Pa·s or more and 25 Pa·s or less, and more preferably in the range of 1.0 Pa·s or more and 20 Pa·s or less. By adjusting the viscosity to such a level, the first coating member 5a can be moved more efficiently toward the light-emitting element 2 along the semiconductor element 3. Also, it becomes easy to appropriately adjust the shape change of the first coating member 5a due to the centrifugal force described later. Furthermore, it becomes easier to sediment the first reflective member 5B by the centrifugal force.

[0025] Any method known in the art may be used for the coating method of the first coating member 5a. For example, a discharge device (resin discharge device: see Japanese Unexamined Patent Application Publication No. 2009-182307) capable of discharging the liquid first coating member 5a continuously and at a constant discharge flow rate using air pressure or the like can be used. When using the discharge device, it is preferable to keep the moving speed of the needle of the discharge device constant. Also, the first coating member 5a may be coated, for example, only once or multiple times in the above-described region. The coating of the first coating member 5a may be performed on an aggregate of substrates on which a plurality of light-emitting devices are arranged in a matrix.

[0026] (S3: Applying a concentration difference to the first reflective member by applying a centrifugal force to the first coating member) A centrifugal force is applied in the direction perpendicular to the substrate 1 (Z-axis direction) to the first coating member 5a disposed on the side surface 2S or the side and the side surface 3S or the side of the light-emitting element 2 and the semiconductor element 3. That is, taking the X-axis or Y-axis parallel to the substrate 1 and using the upper side of the substrate 1 as the center of the rotation axis, by revolving the substrate 1, a centrifugal force can be applied in the vertical direction to the substrate 1. The magnitude of the centrifugal force is preferably 100G (×g) or more in terms of relative centrifugal force (RCF), more preferably 200G or more, and even more preferably 300G or more. Also, in order to prevent excessive deformation or flow of the first coating member 5a, fluctuations of the arranged light-emitting element 2 and semiconductor element 3, etc., it is preferably 500G or less. Note that the relative centrifugal force, that is, the rotation speed, the number of revolutions, etc. can be appropriately adjusted according to the size, weight of the substrate, the type of the first coating member 5a used, the content and average particle diameter of the first reflective member 5B, etc. By applying such a centrifugal force, within the first coating member 5a, the first reflective member 5B can be moved so as to settle toward the substrate 1 side. As a result, when the first coating member 5 is vertically trisected between the semiconductor element 3 and the light-emitting element 2, the concentration of the first reflective member 5B in the lower 1 / 3 region 5L is 1.5 times or more and 20 times or less the concentration of the first reflective member 5B in the upper 1 / 3 region 5U. In the first coating member 5, a concentration difference of the first reflective member 5B can be provided in the vertical direction. Also, even if there are irregularities such as crawling on the upper surface of the first coating member 5a before applying the centrifugal force, after applying the centrifugal force, the first coating member 5a is pressed against the substrate side and is flattened as a whole. That is, even if there is a first coating member 5a that has crawled up the side surface of the light-transmissive member 4 before applying the centrifugal force, the first reflective member 5B settles, the fluid first resin 5A spreads horizontally, and the upper surface of the first coating member 5a becomes flat. Note that since the first reflective member 5B hardly flows in the horizontal direction when the centrifugal force is applied, the first reflective member 5B is difficult to become flat, and the first reflective member 5B contained in the first coating member 5a before applying the centrifugal force settles as it is toward the substrate side. Therefore, the first coating member 5a is arranged along the side surface facing the side surface of the light-emitting element 2 on the side surface of the semiconductor element 3, both side surfaces sandwiching the side surface, and the side surface of the light-emitting element 2 along the side surface facing the side surface of the semiconductor element 3. And the first reflective member 5B settles along each of the side surfaces. However, as the first resin 5A spreads in the horizontal direction when the centrifugal force is applied, a part of the first reflective member 5B may be mixed in the first resin 5A and arranged on the wiring 1a. Before the application of centrifugal force, as described above, in the region on the substrate 1 where the light-emitting element 2 and the semiconductor element 3 are not arranged, for example, in the regions on both sides of the semiconductor element 3 in FIG. 4B (the corner region 5T of the substrate 1 in FIG. 4B), due to the presence of the wiring 1a, the first coating member 5a does not spread wet and may be arranged in a thin layer in some cases. By applying centrifugal force to give a concentration difference to the first coating member 5a, when using a rectangular substrate in a top view, in the corner of the substrate 1 (region 5T in FIG. 4B) where the light-emitting element 2 and the semiconductor element 3 are not arranged, a low-concentration portion including the first reflective member 5B with a lower concentration than that of the first reflective member 5B between the semiconductor element 3 and the light-emitting element 2 can be arranged. That is, the concentration of the first reflective member 5B of the first coating member 5a in the low-concentration portion can be set to 0.5 mass% or more and 8 mass% or less. Here, the low-concentration portion means that the total concentration of the first reflective member 5B in the entire thickness direction of the first coating member 5a in the low-concentration portion is lower than the total concentration of the first reflective member 5B in the entire thickness direction of the first coating member 5 between the semiconductor element 3 and the light-emitting element 2.

[0027] (S4: Curing of the first coating member) Next, the first coating member 5a in which the first reflective member 5B has settled is cured to form the first coating member 5. The curing conditions can be appropriately adjusted according to the materials used, the amount, etc. For example, the first coating member 5a can be cured by ultraviolet irradiation or heating. The curing can be performed after the application of centrifugal force. By curing after the application of centrifugal force, the device for applying centrifugal force and the device for curing such as heating can be separated and cured easily. On the other hand, it can also be cured during the application of centrifugal force. When curing during the application of centrifugal force, the upward creeping of the first reflective member 5B on the side surface of the semiconductor element 3, the side surface of the light-emitting element 2, etc. can be suppressed. Note that after curing the first coating member 5a, it is preferable to apply and cure the first coating member 5a so that the first coating member 5 does not contact the side surface 4S of the light-transmissive member 4 or contacts the side surface 4S of the light-transmissive member 4 at 1 / 8 or less in the thickness direction of the light-transmissive member 4.

[0028] (S5: Coating of the second covering member) A second covering member 6a including a second resin 6A and a second reflective member 6B is applied onto the cured first covering member 5 and the semiconductor element 3. As a result, the second covering member 6a can be disposed on the side surface or the side of the light transmissive member 4 and the upper surface or the upper side of the semiconductor element 3. In this case, by adjusting the amount of the second covering member 6a, it is preferable to dispose the second covering member 6a so that no height difference occurs between the upper surface of the second covering member 6a and the upper surface of the light transmissive member 4. When the second covering member 6a is disposed by dropping, "sink marks" may occur during curing. Therefore, when the second covering member 6a is applied at the same height as the upper surface of the light transmissive member 4, the height of the second covering member 6a will be lower than the upper surface of the light transmissive member 4 after curing. Thus, when making the second covering member 6a the same height as the upper surface of the light transmissive member 4, the second covering member 6a may be applied higher than the upper surface of the light transmissive member 4, or the upper surfaces of the cured second covering member 6 and the light transmissive member 4 may be polished or ground. In addition, in the application of the second covering member 6a, it is preferable to set the concentration of the second reflective member 6B in the second covering member 6a to be the same as or lower than the concentration of the first reflective member 5B in the upper 1 / 3 of the first covering member 5 and then apply it. This is because the light reflected by the first reflective member 5B can pass through the second covering member 6a and be emitted to the outside. The second covering member 6a can be applied using the same method as the application of the first covering member 5a. Also, in the application of the second covering member 6a, for example, injection molding, compression molding, transfer molding, etc. may be used.

[0029] (S6: Curing of the second covering member) After applying the second covering member 6a, the second covering member 6a is cured to form the second covering member 6. The curing of the second covering member 6a here can be appropriately set depending on the materials used, etc., but can be performed in the same manner as the curing of the first covering member 5a.

[0030] As described above, when a plurality of light-emitting devices are arranged in a matrix using an aggregate of substrates, it is preferable to include a step of dividing the light-emitting devices into individual ones at an arbitrary stage, for example, after curing the second covering member 6a.

[0031] This disclosure includes the following inventions. (1) A light-emitting device having a substrate, a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, a light-transmitting member disposed on the upper surface or above the light-emitting element, a first covering member disposed on the side surface or side of the light-emitting element and the side surface or side of the semiconductor element, and a second covering member disposed on the side surface or side of the light-transmitting member and the upper surface or above the semiconductor element, wherein the first covering member includes a first resin and a first reflecting member, wherein a distance between the semiconductor element and the light-transmitting member in a horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less, wherein, between the semiconductor element and the light-emitting element, the first covering member has a concentration difference of the first reflecting member in a direction perpendicular to the substrate, wherein the concentration difference of the first reflecting member is such that when the first covering member is trisected in the vertical direction between the semiconductor element and the light-emitting element, the concentration of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 10 times or less the concentration of the first reflecting member in the upper 1 / 3. (2) The light-emitting device according to (1), wherein in the first covering member, a content rate of the first reflecting member is 35% by mass or more and 55% by mass or less. (3) The second covering member includes a second resin and a second reflecting member, wherein in the second covering member, a content rate of the second reflecting member is 15% by mass or more and 40% by mass or less in the light-emitting device according to (1) or (2). (4) The light-emitting device according to any one of (1) to (3), wherein a concentration of the second reflecting member in the second covering member is the same as or lower than a concentration of the first reflecting member in the upper 1 / 3 of the first covering member. (5) The concentration of the second reflective member in the second coating member is 0.2 times or more and 1 time or less with respect to the concentration of the first reflective member in the upper 1 / 3 of the first coating member, in the light-emitting device according to (4). (6) The first coating member does not contact the side surface of the light-transmitting member, or in the thickness direction of the light-transmitting member, contacts 1 / 8 or less of the side surface of the light-transmitting member, in the light-emitting device according to any one of (1) to (5). (7) The first reflective member is disposed between the light-emitting element and the substrate, in the light-emitting device according to any one of (1) to (6). (8) In a top view, the substrate is rectangular, and at the corners of the substrate where the light-emitting element and the semiconductor element are not disposed, there is a low-concentration portion including the first reflective member having a lower concentration than the concentration of the first reflective member between the semiconductor element and the light-emitting element, in the light-emitting device according to any one of (1) to (7). (9) The concentration of the first reflective member of the first coating member in the low-concentration portion is 0.5% by mass or more and 8% by mass or less, in the light-emitting device according to (8). (10) The second coating member is disposed in the low-concentration portion and is disposed so as to be at the same height as the upper surface of the light-transmitting member, in the light-emitting device according to (8). (11) A bonding member is disposed between the light-emitting element and the lower surface of the light-transmitting member, and between the side surface of the light-emitting element and the first coating member, in the light-emitting device according to any one of (1) to (10). (12) The bonding member is disposed so as to cover the entire lower surface of the light-transmitting member, in the light-emitting device according to (11). (13) Preparing an intermediate body including a substrate, a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, and a light-transmitting member disposed above the upper surface or above the light-emitting element, wherein a distance between the semiconductor element and the light-transmitting member in a horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less, Applying a first coating member including a first resin and a first reflective member from above the semiconductor element, Apply centrifugal force in the direction perpendicular to the substrate to the side or lateral side of the light-emitting element and the side or lateral side of the semiconductor element on the first coating member disposed thereon, causing the first reflecting member to settle toward the substrate side. When the first coating member is vertically trisected between the semiconductor element and the light-emitting element, the concentration of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 20 times or less the concentration of the first reflecting member in the upper 1 / 3, so as to provide a vertical concentration difference to the first reflecting member. Cure the first coating member on which the first reflecting member has settled. Apply a second coating member including a second resin and a second reflecting member onto the cured first coating member, or onto the upper surface or above the semiconductor element, and dispose the second coating member on the side or lateral side of the light-transmitting member and the upper surface or above the semiconductor element. A method for manufacturing a light-emitting device, including curing the second coating member. (14) The method for manufacturing a light-emitting device according to (13), wherein in applying the first coating member, the content of the first reflecting member in the first coating member is 35% by mass or more and 55% by mass or less. (15) The method for manufacturing a light-emitting device according to (13) or (14), wherein in disposing the second coating member, the concentration of the second reflecting member in the second coating member is the same as or lower than the concentration of the first reflecting member in the upper 1 / 3 of the first coating member. (16) The method for manufacturing a light-emitting device according to any one of (13) to (15), wherein in curing the first coating member, the first coating member is not brought into contact with the side surface of the light-transmitting member, or is brought into contact with 1 / 8 or less of the side surface of the light-transmitting member in the thickness direction of the light-transmitting member. (17) The method for manufacturing a light-emitting device according to any one of (13) to (16), wherein in applying the first coating member, the first reflecting member is disposed between the light-emitting element and the substrate. (18) In providing a concentration difference to the first covering member, using the rectangular substrate in a top view, at the corners of the substrate where the light-emitting element and the semiconductor element are not arranged, a low-concentration portion including the first reflecting member having a lower concentration than the concentration of the first reflecting member between the semiconductor element and the light-emitting element is arranged. The method for manufacturing a light-emitting device according to any one of (13) to (17). (19) In providing a concentration difference to the first covering member, making the concentration of the first reflecting member of the first covering member in the low-concentration portion be 0.5% by mass or more and 8% by mass or less. The method for manufacturing a light-emitting device according to any one of (13) to (18). (20) In preparing the intermediate body, a joining member is arranged between the upper surface of the light-emitting element and the lower surface of the light-transmitting member, and between the side surface of the light-emitting element and the first covering member. The method for manufacturing a light-emitting device according to any one of (13) to (19). (21) having a substrate, a light-emitting element arranged on the substrate, a semiconductor element arranged on the substrate and adjacent to the light-emitting element, a light-transmitting member arranged above or on the upper surface of the light-emitting element, a first covering member arranged on the side surface or side of the light-emitting element and the side surface or side of the semiconductor element, and a second covering member arranged on the side surface or side of the light-transmitting member and the upper surface or above of the semiconductor element, the first covering member includes a first resin and a first reflecting member, the distance between the semiconductor element and the light-transmitting member in the horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less, between the semiconductor element and the light-emitting element, the first covering member has a concentration difference of the first reflecting member in the vertical direction with respect to the substrate, the concentration difference of the first reflecting member is such that when the first covering member is vertically trisected between the semiconductor element and the light-emitting element, the number of particles of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 10 times or less the number of particles of the first reflecting member in the upper 1 / 3. A light-emitting device. [Description of Reference Numerals]

[0032] 1 Substrate 1a Wiring 1E1, 1E2, 1E3, 1E4 Ends 2 Light-emitting element 2a Electrode 2S Side surface 3 Semiconductor element 3S Side surface 4 Translucent member 4L Bottom surface 4S Side surface 4U Top surface 5, 5a First covering member 5A First resin 5B First reflecting member 5L Region 5M Region 5T Region 5U Region 6, 6a Second covering member 6A Second resin 6B Second reflecting member 7 Joining member 10 Light-emitting device

Claims

1. a substrate and a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, a light-transmitting member disposed on the upper surface or above the light-emitting element, a first covering member disposed on the side surface or side of the light-emitting element and on the side surface or side of the semiconductor element, a second covering member disposed on the side surface or side of the light-transmitting member and on the upper surface or above the semiconductor element, and having the first covering member includes a first resin and a first reflecting member, the distance between the semiconductor element and the light-transmitting member in the horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less, between the semiconductor element and the light-emitting element, the first covering member has a concentration difference of the first reflecting member in the vertical direction with respect to the substrate, the concentration difference of the first reflecting member is such that when the first covering member is vertically trisected between the semiconductor element and the light-emitting element, the concentration of the first reflecting member in the lower 1 / 3 is 1.5 times or more and 20 times or less the concentration of the first reflecting member in the upper 1 / 3. A light-emitting device.

2. The light-emitting device according to claim 1, wherein in the first covering member, the content of the first reflecting member is 35% by mass or more and 55% by mass or less.

3. the second covering member includes a second resin and a second reflecting member, The light-emitting device according to claim 1, wherein in the second covering member, the content of the second reflecting member is 15% by mass or more and 40% by mass or less.

4. The light-emitting device according to claim 1, wherein the concentration of the second reflecting member in the second covering member is the same as or lower than the concentration of the first reflecting member in the upper 1 / 3 of the first covering member.

5. The light-emitting device according to claim 4, wherein the concentration of the second reflecting member in the second covering member is 0.2 times or more and 1 times or less the concentration of the first reflecting member in the upper 1 / 3 of the first covering member.

6. The light-emitting device according to claim 1, wherein the first covering member does not contact the side surface of the light-transmitting member or contacts the side surface of the light-transmitting member by 1 / 8 or less in the thickness direction of the light-transmitting member.

7. The light-emitting device according to claim 1, wherein the first reflecting member is disposed between the light-emitting element and the substrate.

8. In a top view, the substrate is rectangular, and at a corner of the substrate where the light-emitting element and the semiconductor element are not arranged, there is a low-concentration portion including the first reflecting member having a lower concentration than the concentration of the first reflecting member between the semiconductor element and the light-emitting element. The light-emitting device according to claim 1.

9. The concentration of the first reflecting member of the first coating member at the low-concentration portion is 0.5% by mass or more and 8% by mass or less. The light-emitting device according to claim 8.

10. The second coating member is arranged at the low-concentration portion and is arranged so as to be at the same height as the upper surface of the light-transmitting member. The light-emitting device according to claim 8.

11. A bonding member is arranged between the upper surface of the light-emitting element and the lower surface of the light-transmitting member, and between the side surface of the light-emitting element and the first coating member. The light-emitting device according to claim 1.

12. The bonding member is arranged so as to cover the entire lower surface of the light-transmitting member. The light-emitting device according to claim 11.

13. Prepare an intermediate body including a substrate, a light-emitting element arranged on the substrate, a semiconductor element arranged on the substrate and adjacent to the light-emitting element, and a light-transmitting member arranged above the upper surface or above the light-emitting element, wherein a distance between the semiconductor element and the light-transmitting member in a horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less. Apply a first coating member including a first resin and a first reflecting member from above the semiconductor element. Apply a centrifugal force in a direction perpendicular to the substrate to the side surface or side of the light-emitting element and the side surface or side of the first coating member arranged on the side surface or side of the semiconductor element, so that the first reflecting member sinks to the substrate side. When the first coating member is vertically divided into three equal parts between the semiconductor element and the light-emitting element, a concentration of the first reflecting member in a lower 1 / 3 is 1.5 times or more and 20 times or less with respect to a concentration of the first reflecting member in an upper 1 / 3, and give a vertical concentration difference to the first reflecting member. Cure the first coating member in which the first reflecting member has sunk. Apply a second coating member including a second resin and a second reflecting member to the cured first coating member, or to the upper surface or above the semiconductor element, and arrange the second coating member on the side surface or side of the light-transmitting member and the upper surface or above the semiconductor element. A method for manufacturing a light-emitting device including curing the second coating member.

14. The method for manufacturing a light-emitting device according to claim 13, wherein, when applying the first coating member, the content of the first reflecting member in the first coating member is 35% by mass or more and 55% by mass or less.

15. The method for manufacturing a light-emitting device according to claim 13, wherein, when disposing the second coating member, the concentration of the second reflecting member in the second coating member is the same as or lower than the concentration of the first reflecting member in the upper 1 / 3 of the first coating member.

16. The method for manufacturing a light-emitting device according to claim 13, wherein, when curing the first coating member, the first coating member is not brought into contact with the side surface of the light-transmitting member, or is brought into contact with the side surface of the light-transmitting member at 1 / 8 or less of the side surface of the light-transmitting member in the thickness direction of the light-transmitting member.

17. The method for manufacturing a light-emitting device according to claim 13, wherein, when applying the first coating member, the first reflecting member is disposed between the light-emitting element and the substrate.

18. The method for manufacturing a light-emitting device according to claim 13, wherein, when providing a concentration difference in the first coating member, a low-concentration portion including the first reflecting member having a lower concentration than the concentration of the first reflecting member between the semiconductor element and the light-emitting element is disposed at a corner of the substrate where the rectangular substrate is used in a top view and the light-emitting element and the semiconductor element are not disposed.

19. The method for manufacturing a light-emitting device according to claim 13, wherein, when providing a concentration difference in the first coating member, the concentration of the first reflecting member in the first coating member in the low-concentration portion is 0.5% by mass or more and 8% by mass or less.

20. The method for manufacturing a light-emitting device according to claim 13, wherein, when preparing the intermediate body, a bonding member is disposed between the upper surface of the light-emitting element and the lower surface of the light-transmitting member, and between the side surface of the light-emitting element and the first coating member.

21. A substrate and a light-emitting element disposed on the substrate, a semiconductor element disposed on the substrate and adjacent to the light-emitting element, a light-transmitting member disposed above or on the upper surface of the light-emitting element, a first coating member disposed on the side surface or side of the light-emitting element and on the side surface or side of the semiconductor element, and a second coating member disposed on the side surface or side of the light-transmitting member and above or on the upper surface of the semiconductor element, wherein the first coating member includes a first resin and a first reflecting member. The distance between the semiconductor element and the light-transmissive member in the horizontal direction with respect to the substrate is 30 μm or more and 70 μm or less. Between the semiconductor element and the light-emitting element, the first coating member has a density difference of the first reflective member in the direction perpendicular to the substrate. The density difference of the first reflective member is such that when the first coating member is divided into three equal parts in the vertical direction between the semiconductor element and the light-emitting element, the number of particles of the first reflective member in the lower 1 / 3 is 1.5 times or more and 10 times or less the number of particles of the first reflective member in the upper 1 / 3. A light-emitting device.

Images