Sintered compact substrate, light-emitting device, and method for manufacturing the same

Abstract

To provide a sintered compact substrate which exhibits excellent mountability and high reliability, a light-emitting device, and a method for manufacturing them.SOLUTION: A method for producing a sintered compact substrate includes: preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, the ceramic substrate having a through-hole penetrating from the first surface to the second surface; disposing a first conductive paste containing an active metal powder in the through-hole; drying the first conductive paste; removing at least a part of a surface of the first conductive paste on the first surface side; disposing a second conductive paste containing an active metal powder on the first conductive paste on the first surface side; firing the first conductive paste and the second conductive paste to form a first conductive member and a second conductive member, respectively; and removing at least a part of a surface of the second conductive member on a first surface side to make the entire surface of the second conductive member and the first surface flush with each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a sintered body substrate, a light-emitting device, and methods for manufacturing them.

Background Art

[0002] Conventionally, in ceramic substrates with excellent high thermal conductivity such as Si3N4 substrates, an active metal brazing material has been used for via materials and wirings (such as Patent Documents 1 and 2). In such ceramic substrates, depressions may occur on the surface of the active metal brazing material after firing, making it difficult to mount electronic components such as light-emitting elements.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment according to the present disclosure aims to provide a sintered body substrate, a light-emitting device, and methods for manufacturing them, which have good mountability in a substrate having via materials and wirings.

Means for Solving the Problems

[0005] The manufacturing method of the sintered body substrate disclosed in the embodiment includes preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating from the first surface to the second surface; disposing a first conductive paste containing an active metal powder in the through hole; drying the first conductive paste; removing at least a part of the surface of the first conductive paste on the first surface side; disposing a second conductive paste containing an active metal powder on the first conductive paste on the first surface side; firing the first conductive paste and the second conductive paste to form a first conductive member and a second conductive member; and removing at least a part of the surface of the second conductive member on the first surface side to make the first surface and the entire surface of the second conductive member flush. The manufacturing method of the light-emitting device disclosed in the embodiment includes preparing a sintered body substrate by the manufacturing method of the sintered body substrate described above, and disposing a light-emitting element that is electrically connected to the second conductive member directly or indirectly. The sintered body substrate disclosed in the embodiment includes a nitride or oxide ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating from the first surface to the second surface; a first conductive member disposed in the through hole and having a depression near the surface on the first surface side; and a second conductive member disposed at least in the depression, wherein the first surface and the entire surface of the second conductive member are flush, and each of the first conductive member and the second conductive member contains a nitride containing at least one of Ti, Ce, Zr, and Mg, or an oxide containing at least one of Ti, Ce, Zr, and Mg. The light-emitting device disclosed in the embodiment includes the above-described sintered body substrate and a light-emitting element that is electrically connected to the second conductive member directly or indirectly via plating.

Advantages of the Invention

[0006] According to the embodiment of the present disclosure, it is possible to provide a sintered body substrate, a light-emitting device, and a manufacturing method thereof with good mountability in a substrate having via materials and wirings.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2A

Figure 2B

Figure 2C

Figure 2D

Figure 2E

Figure 2F

Figure 2G

Figure 2H

Figure 2I

Figure 2J

Figure 3A

Figure 3B

Figure 4

Figure 5A

Figure 5B

Figure 5C

Figure 6

Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments according to the present disclosure will be described with reference to the drawings. However, the embodiments described below are for embodying the technical idea according to the present disclosure, and the invention is not limited to the following unless specifically described. The content described in one embodiment is also applicable to other embodiments and modified examples. The drawings schematically show the embodiments, and for clarity of explanation, the scale, interval, positional relationship, etc. of each member may be exaggerated, or a part of the member may be omitted. The directions shown in each figure indicate the relative positions between the components and are not intended to indicate absolute positions. For convenience of explanation, even when described as a cross-section, it may be an end face, and vice versa. For the same names and reference numerals, in principle, the same or homogeneous members are shown, and detailed descriptions will be omitted as appropriate. For the embodiments, "cover" and "arrange" are not limited to the case of direct contact, but also include the case of indirectly covering or arranging, for example, via other members.

[0009] 〔Method for Manufacturing Sintered Body Substrate〕 As shown in FIG. 1, the method for manufacturing a sintered body substrate according to the embodiment includes preparing a ceramic substrate (S11), disposing a first conductive paste (S12), drying the first conductive paste (S13), removing a part of the first conductive paste (S14), disposing a second conductive paste (S15), firing the first conductive paste and the second conductive paste (S16) to obtain a first conductive member and a second conductive member, and removing a part of the obtained second conductive member (S17). The method for manufacturing a sintered body substrate according to the embodiment may further include disposing a third conductive paste (S15a), firing the third conductive paste simultaneously with firing the first conductive paste and the second conductive paste (S16a), and removing a part of the third conductive member (S17a). Further, it may include disposing plating on the surface of the second conductive member and optionally the third conductive member (S18a). By performing such a process, it is possible to effectively suppress recesses that may occur on the surfaces of the first conductive member, the second conductive member, etc., and it becomes possible to efficiently manufacture a sintered body substrate with good mountability.

[0010] S11: Preparation of ceramic substrate As shown in FIG. 2A, a ceramic substrate 1 is prepared. As the ceramic substrate 1, it is preferable to use, for example, a ceramic substrate that has already been fired and hardened. The ceramic substrate 1 preferably contains at least one of nitride-based ceramics such as silicon nitride, aluminum nitride, and boron nitride, oxide-based ceramics such as magnesium oxide and aluminum oxide, beryllium oxide, silicon carbide, mullite, borosilicate glass, etc. Among them, the ceramic substrate 1 is preferably nitride-based ceramics such as silicon nitride, aluminum nitride, and boron nitride. The ceramic substrate is preferably a flat substrate. The planar shape can be appropriately set according to the intended light-emitting device. For example, in plan view, a rectangular one can be mentioned. The ceramic substrate 1 has a first surface 1A and a second surface 1B which is the opposite surface of the first surface 1A. The ceramic substrate 1 has a through-hole 1C that penetrates from the first surface 1A to the second surface 1B. As long as the through-hole 1C penetrates from the first surface 1A to the second surface 1B, it may have any shape in plan view as viewed from the first surface 1A side or the second surface 1B. For example, various shapes can be mentioned such as circular, elliptical, polygonal shapes such as triangular and quadrangular, and shapes combining these. Also, the cross-sectional shape of the through-hole 1C can be any shape. For example, in cross-sectional view, it may have the same width from the first surface 1A side toward the second surface 1B, or may be a shape that gradually becomes narrower or wider, or a shape that becomes narrower or wider due to one or more steps, specifically, a shape that is wider on the first surface 1A side, a shape that is wider on the second surface 1B side, a shape that is wider on both the first surface 1A and the second surface 1B sides, etc., and various shapes can be mentioned. In FIG. 2A, the through hole 1C is wide on the first surface 1A and the second surface 1B sides, and has a constant width otherwise. The wide shape on the first surface 1A side may be described as the first recess 1D, and the wide shape on the second surface 1B side may be described as the second recess 1E. That is, the through hole 1C has the first recess 1D on the first surface 1A side, the second recess 1E on the second surface 1B side, and the first through hole 1F that penetrates from the first recess 1D to the second recess 1E and is narrower than the first recess 1D and the second recess 1E. The widths, sizes, and depths of the first recess 1D and the second recess 1E, and the size and depth of the first through hole 1F, etc. can be appropriately set according to the intended form of the light-emitting device. For example, the diameter or one side (W3 in FIG. 2A) of the first through hole 1F may be 0.05 mm or more and 0.5 mm or less. The depth (length, d3 in FIG. 2A) of the first through hole 1F may be 50% or more and 90% or less of the thickness of the ceramic substrate 1. The first recess 1D and the second recess 1E only need to have their diameters or one sides (W1 and W3 in FIG. 2A, respectively) larger than the diameter or one side of the first through hole 1F, and preferably 3 times or more. The depths (d1 and d3 in FIG. 2A, respectively) of the first recess 1D and the second recess 1E may be 5% or more and 40% or less of the thickness of the ceramic substrate 1. The diameters or one sides and the depths of the first recess 1D and the second recess 1E may be the same or different. Note that the through hole 1C may be two or more with respect to one first recess 1D and / or one second recess 1E. The through holes 1C, 1H, and the first through hole 1F may sometimes be collectively referred to as through holes. The through hole, the first recess 1D, the second recess 1E, etc. can be formed by methods known in the art. For example, the first recess 1D, the second recess 1E, and / or the through hole 1C can be formed by dry or wet etching, blasting, laser processing in which laser light is irradiated from the first surface 1A and / or the second surface 1B side of the ceramic substrate 1, etc. The ceramic substrate 1 can be prepared by appropriately setting the thickness, the area of the first surface 1A and / or the second surface 1B for arranging one or more light-emitting elements, the number of through-holes, etc. For example, the thickness of the ceramic substrate 1 is 100 μm or more and 1500 μm or less, preferably 150 μm or more and 1000 μm or less, specifically 250 μm. The diameter of the first through-hole 1F is 50 μm or more and 500 μm or less, preferably 100 μm or more and 300 μm or less, specifically 200 μm. The diameter of the first recess 1D and / or the second recess 1E is 80 μm or more and 800 μm or less, preferably 100 μm or more and 500 μm or less, specifically 300 μm. The depth of the first recess 1D and / or the second recess 1E is 10 μm or more and 200 μm or less, preferably 20 μm or more and 100 μm or less, specifically 35 μm.

[0011] S12: Arrangement of the first conductive paste As shown in FIG. 2B, the first conductive paste 11 is arranged in the through-hole 1C of the ceramic substrate 1. The first conductive paste 11 has conductivity and can include, for example, active metal powder, metal powder, inorganic filler, resin, solvent, etc. When the first conductive paste 11 contains resin and / or organic solvent, it can give appropriate fluidity, can be freely filled into the through-hole 1C of any shape, and optionally into the first recess 1D and / or the second recess 1E, and can be applied and arranged in any shape and thickness. Examples of the active metal powder include one or more of TiH2, CeH2, ZrH2, and MgH2. After firing, the active metal powder reacts with nitrogen, oxygen, or carbon in the ceramic substrate 1 to become nitrides, oxides, or carbides of Ti, Ce, Zr, or Mg. The content of the active metal powder contained in the first conductive paste is 1 part by weight or more and 20 parts by weight or less, preferably 1 part by weight or more and 5 parts by weight or less, based on 100 parts by weight of the first conductive paste. By containing the active metal powder within such a range, the reaction products such as the above-mentioned nitrides, oxides, or carbides can be minimized and the generation of hydrogen can be reduced after the firing in the subsequent process. Examples of the metal powder include one or more of Ag, Al, Zn, Sn, Cu, and Ag-Cu alloy powder. In addition to this, one or more of Cu, Cr, and Ni may also be included. When the first conductive paste contains the metal powder, the content thereof is 1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the first conductive paste. The inorganic filler can be dispersed in the conductive paste to reduce the generation of cracks and suppress the volume change due to firing. The inorganic filler before firing is, for example, a plurality of granular members, and examples thereof include crystalline or non-crystalline ones. Examples of the inorganic filler include nitride ceramic fillers such as aluminum nitride and silicon nitride, oxide ceramic fillers such as aluminum oxide, silicon oxide, zirconium oxide, and yttrium oxide, carbide ceramic fillers such as silicon carbide, and glass fillers such as soda lime glass, borosilicate glass, quartz glass, and lead glass. Among them, nitride ceramic fillers are preferred. When the first conductive paste contains the inorganic filler, the content thereof is 1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the first conductive paste. By containing the inorganic filler, particularly the nitride ceramic filler, in the first conductive paste, it is possible to suppress the volume shrinkage of the first conductive paste inside the through hole 1C and the first through hole 1F, and prevent the occurrence of surface depressions. Examples of the resin include polyvinyl alcohol (PVA) and polyvinylpyrrolidone (PVP). When the first conductive paste contains the resin, the content thereof is 1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the first conductive paste. Examples of the solvent include organic solvents such as terpineol and butyl carbitol. When the first conductive paste contains the solvent, the content thereof is 5% by mass or more and 15% by mass or less with respect to 100 parts by weight of the first conductive paste.

[0012] The arrangement of the first conductive paste 11 in the through-hole 1C can utilize methods known in the art, such as screen printing, inkjet printing, injection with a nozzle, filling with a squeegee, etc. At this time, the first conductive paste 11 may be arranged not only within the through-hole 1C but also to cover part or all of the upper part of the through-hole 1C and the first surface 1A of the ceramic substrate 1. The first conductive paste 11 can be applied, for example, by screen printing from the first surface 1A side, so that the first conductive paste can be arranged at least within the through-hole 1C, that is, within the first through-hole 1F and the first recess 1D. Further, by applying the first conductive paste 11 one or more times, it can also be arranged on a part of the first surface 1A. In other words, as shown in FIG. 2B, the first conductive paste 11 is preferably arranged on the first surface 1A to be slightly larger than the through-hole 1C and to be convex with respect to the first surface 1A. For this purpose, it is preferable to apply the first conductive paste a plurality of times from the first surface 1A side. By such an arrangement of the first conductive paste 11, even when the volume of the first conductive paste 11 shrinks after drying and / or firing, it is possible to prevent a depression within the through-hole 1C. If the convex portion is too thick or the planar shape is too large, there is a tendency for warping to occur during sintering, and cracks may occur. Therefore, the width of the convex portion is preferably 2 times or less depending on the diameter or the side length of the through-hole 1C, etc. Also, the thickness of the convex portion is preferably 30 μm or less.

[0013] When arranging the first conductive paste 11 within the first through-hole 1F and the first recess 1D, as shown in FIG. 2C, it may be similarly arranged in the second recess 1E on the second surface 1B side. In this case, it is preferable to apply the first conductive paste 11 one or more times from the second surface 1B side so that the first conductive paste 11 is arranged within the second recess 1E and also on a part of the second surface 1B.

[0014] S13: Drying of the first conductive paste Dry the first conductive paste 11 disposed in the through-hole. The drying of the first conductive paste 11 may be performed by any known method, such as natural drying, drying using a drying furnace or the like, drying using the firing furnace used in the next process, etc. The drying temperature is, for example, about 20°C or more and 200°C or less, and the drying time can be set from several minutes to several hours. The drying may be performed either under reduced pressure or under normal pressure. Due to the drying of the first conductive paste 11, as shown in FIG. 2D, the volume shrinks due to volatile components contained in the first conductive paste 11, such as organic solvents, etc., and a depression 11g may occur above the through-hole 1C. In particular, when the size of the through-hole 1C in plan view is large, the depression 11g is likely to occur. In addition, when the first conductive paste 11 is also disposed in the second recess 1E, a depression 11g occurs in the first conductive paste 11 in the same manner as on the first surface 1A side.

[0015] S14: Partial removal of the first conductive paste Subsequently, as shown in FIG. 2E, at least a part of the surface of the first conductive paste 11 on the first surface 1A side among the dried first conductive paste 11, that is, the first conductive paste 11 including the depression 11g, is removed. The removal of a part of the first conductive paste 11 here preferably means, for example, removing the surface of the dried first conductive paste 11 in the through-hole 1C so as to be substantially flush with the first surface 1A. The removal of the first conductive paste 11 may be performed using any method known in the art, such as polishing, grinding, etc. Here, for the substantially flush surface, unevenness of 5% or less of the total thickness of the first conductive paste 11 is allowed. By such partial removal of the first conductive paste 11, the depression generated by the drying of the first conductive paste 11 can be eliminated, and even after sintering, a flat surface can be obtained without the depression reaching the through-hole, and the mountability of electronic components on the ceramic substrate can be improved. In addition, when the first conductive paste 11 is also disposed in the second recess 1E on the second surface 1B side, it is preferable to remove the surface of the dried first conductive paste 11 in the through-hole 1C so as to be substantially flush with the second surface 1B in the same manner as above.

[0016] S15: Arrangement of the second conductive paste As shown in Fig. 2F, the second conductive paste 12 is arranged on the first conductive paste 11 which has been partially removed and is flush with the first surface 1A. The arrangement of the second conductive paste 12 can be performed in the same manner as the arrangement of the first conductive paste 11. The arrangement of the second conductive paste 12 is preferably arranged not only on the first conductive paste 11 within the through hole 1C but also so as to cover a part or all of the first surface 1A of the ceramic substrate 1. In other words, the second conductive paste 12 is preferably arranged slightly larger than the through hole 1C on the first surface 1A and is arranged convexly with respect to the first surface 1A. The width of the convex portion is preferably 2 times or less of the diameter or the side length of the through hole 1C. Also, the thickness of the convex portion is preferably 30 μm or less.

[0017] The second conductive paste 12 has conductivity and can contain, for example, active metal powder, metal powder, inorganic filler, resin, solvent, etc. Further, since the second conductive paste 12 is to form a wiring pattern of the ceramic substrate, it is preferably, for example, a composition that is easy to plate. When the second conductive paste 12 contains a resin and / or an organic solvent, appropriate fluidity can be imparted, and it can be freely patterned into an arbitrary shape, and can be applied and arranged in an arbitrary shape and thickness. Examples of the active metal powder include one or more of TiH2, CeH2, ZrH2, and MgH2. The content of the active metal powder contained in the second conductive paste is preferably 1 part by weight or more and 20 parts by weight or less, and more preferably 1 part by weight or more and 5 parts by weight or less with respect to 100 parts by weight of the second conductive paste. By containing the active metal powder within such a range, the metal reactant can be minimized and the generation of hydrogen can be reduced after the firing in the subsequent process. Examples of the metal powder include one or more of Ag, Al, Zn, Sn, Cu, and Ag-Cu alloy powder. In addition, one or more of Cu, Cr, and Ni may be included. When the second conductive paste contains the metal powder, the content thereof is 1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the first conductive paste. Examples of the inorganic filler include oxide ceramic fillers such as aluminum oxide, silicon oxide, zirconium oxide, and yttrium oxide, carbide ceramic fillers such as silicon carbide, and glass fillers such as soda lime glass, borosilicate glass, quartz glass, and lead glass. The second conductive paste 12 preferably does not contain the above-described nitride ceramic filler. Examples of the resin include PVA and PVP. When the second conductive paste contains the resin, the content thereof is 1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the second conductive paste. Examples of the solvent include organic solvents such as terpineol and butyl carbitol. When the second conductive paste contains the solvent, the content thereof is 5% by mass or more and 15% by mass or less with respect to 100 parts by weight of the second conductive paste. Since the second conductive paste 12 contains the metal powder and particularly does not contain the nitride ceramic filler, the conductivity is good, the electrical resistance can be reduced, the thermal conductivity can be improved, and furthermore, the adhesion to plating can be improved when plating. After arranging the second conductive paste 12, as shown in FIG. 2G, it is preferable to dry the second conductive paste 12 in the same manner as the drying of the first conductive paste 11.

[0018] S15a: Arrangement of the third conductive paste In addition, as shown in FIG. 2F, when the first conductive paste 11 is arranged so as to be flush with the second surface 1B, when arranging the second conductive paste 12 on the first conductive paste 11, in the same manner as above, the third conductive paste 13 may be arranged on the first conductive paste 11 on the second surface 1B side. The arrangement of the third conductive paste 13 can be performed in the same manner as the second conductive paste 12. The third conductive paste 13 can be the same as that exemplified by the second conductive paste 12. The third conductive paste 13 may have a composition different from that of the second conductive paste 12, but preferably has the same composition. Also, after disposing the third conductive paste 13, as shown in FIG. 2G, it is preferable to dry the third conductive paste 13 in the same manner as the second conductive paste 12. This drying is preferably performed together with the second conductive paste 12.

[0019] S16: Firing of the first conductive paste and the second conductive paste The first conductive paste 11 and the second conductive paste 12 are fired. The firing of the first conductive paste 11 and the second conductive paste 12 can be performed using a firing furnace such as an electric furnace together with the ceramic substrate. The firing temperature at this time may be 700°C or higher and 1100°C or lower. The firing temperature is preferably 750°C or higher and 900°C or lower, and more preferably 780°C or higher and 850°C or lower. Also, the firing atmosphere in the firing furnace is preferably a vacuum atmosphere of 10 -5 Pa or less or an Ar atmosphere of 99.9% or more. The firing time can be, for example, 15 minutes or more and 120 minutes or less. By such firing, as shown in FIG. 2H, the first conductive paste 11 and the second conductive paste 12 disposed in the through-hole 1C of the ceramic substrate 1 can be made into the first conductive member 11A and the second conductive member 12A. By this firing, on the surface of the second conductive member 12A, as shown in FIG. 2H, the volume of the second conductive member 12A shrinks, and a depression 12g is generated above the through-hole 1C. In particular, when the size of the through-hole 1C in plan view is large, the depression 12g is likely to occur significantly. Also, a depression 11j may occur on the surface of the first surface 1A side of the first conductive member 11A disposed in the through-hole 1C, but since the surface of the first conductive member 11A is covered by the second conductive member 12A, the depression 11j is filled by the second conductive member 12A and absorbed by the depression 12g.

[0020] S16a: Firing of the third conductive paste In the above description, when the third conductive paste 13 is disposed and dried, the third conductive paste 13 is fired simultaneously with the firing of the first conductive paste 11 and the second conductive paste 12, and as shown in FIG. 2H, it can be made into the third conductive member 13A. Due to this firing, a depression 13g is formed on the surface of the third conductive member 13A above the through hole 1C. Similarly, a depression 11j may occur on the surface of the first conductive member 11A disposed in the through hole 1C on the second surface 1B side, but the depression 11j is filled by the third conductive member 13A and absorbed by the depression 13g.

[0021] S17: Partial removal of the second conductive member In the second conductive member 12A obtained by firing, at least a part of its surface is removed so that the first surface 1A and the entire surface of the second conductive member 12A are flush, as shown in FIG. 2I. That is, as described above, due to the volume shrinkage of the second conductive paste 12 during firing, a depression 12g is formed above the through hole 1C. By removing the surface of the second conductive member 12A so that the first surface 1A and the entire surface of the second conductive member 12A are flush, the first surface 1A can be flattened. Here, being flush means that there are no irregularities, in other words, it is preferable that the height difference of the irregularities is 3 μm or less. That is, it is preferable that the arithmetic mean roughness Ra of the surface of the second conductive member 12A that is flush with the first surface 1A of the ceramic substrate 1 is 0.01 μm or more and 1.5 μm or less, more preferably 1.0 μm or less, further preferably 0.5 μm or less, and even more preferably 0.1 μm or less. By setting the arithmetic mean roughness Ra to 1.5 μm or less, the element electrode connected to the first surface 1A can be stably joined. The arithmetic mean roughness Ra here is a value measured according to ISO 25178 surface texture (surface roughness measurement) shown in international standards using a stylus type using a stylus or a non-stylus type measuring instrument using a laser (conforming to JIS B 0601). The removal of the second conductive member 12A may be performed using any method known in the art, such as polishing or grinding. S17a: Partial removal of the third conductive member Also, when the third conductive member 13A is disposed in the second recess 1E on the second surface 1B side, similar to the above, as shown in FIG. 2I, it is preferable to remove the third conductive member 13A so that the surface of the third conductive member 13A within the through-hole 1C is flush with the second surface 1B. The removal of the third conductive member 13A can be performed in the same manner as the first conductive member 11A and the second conductive member 12A.

[0022] In the first conductive member 11A and the second conductive member 12A after sintering, and any third conductive member 13A thus obtained, metal reactants are formed on the inner surface of the through-hole 1C by the metal powder contained in the first conductive paste 11, the second conductive paste 12, and any third conductive paste 13. In particular, when the metal powder contains one or more of Cu, Cr, and Ni, the metal reactants are located around the fired Cu, Cr, and Ni. Also, when an inorganic filler is contained, the metal reactants also come to be located around the inorganic filler. Therefore, the sintered first conductive member 11A, the second conductive member 12A, and the third conductive member 13A can improve the bonding strength with the inner wall of the through-hole 1C. In addition, when the through-hole 1C of the ceramic substrate 1 includes the first recess 1D and / or the second recess 1E, the heat dissipation can be improved due to the opening area wider than that of the first through-hole 1F. As a result, the obtained sintered body substrate has high heat dissipation and can maintain its strength. Also, the second conductive member 12A and / or the third conductive member 13A each form a wiring pattern on the first surface 1A and / or the second surface 1B of the ceramic substrate, and are connected, for example, to the electrodes of electronic components mounted on the ceramic substrate and / or external connection electrodes, etc., directly or via other conductive members. Therefore, since the surface of the wiring pattern is flush with the first surface 1A and / or the second surface 1B of the ceramic substrate 1 and the surface of the wiring pattern itself is flat, the connection strength with electronic components etc. can be stably improved, and further improvement in performance such as the reliability of the substrate becomes possible.

[0023] S18a: Plating Also, as shown in FIG. 2J, plating 14 may be disposed on the surface of the second conductive member 12A. The plating 14 may be formed by any method known in the art. For example, either a dry plating method or a wet plating method may be used, and either electrolytic plating, electroless plating, or the like may be used. Among these, it is preferable to use electroless plating. Examples of the plating include gold, nickel, platinum, and the like. The thickness of the plating can be appropriately set according to the composition of the second conductive member 12A, etc., and for example, it may be 0.1 μm or more and 10 μm or less. As described above, when the third conductive member 13A is formed, plating 14 may also be disposed on the surface of the third conductive member 13A. In this case, it is preferable to dispose the plating 14 on the surface of the third conductive member 13A together with the second conductive member 12A. The plating 14 on the surface of the third conductive member 13A may be different from the plating 14 on the surface of the second conductive member 12A, but it is preferably the same.

[0024] 〔Modification of the manufacturing method of the sintered body substrate〕 In the above-described manufacturing method of the sintered body substrate, the through-hole 1C has a shape that is wide on the first surface 1A and the second surface 1B, that is, the first through-hole 1F has the first concave portion 1D on the first surface 1A side and the second concave portion 1E on the second surface 1B side. The ceramic substrate 1 is used. However, as shown in FIG. 6, a ceramic substrate 1X in which the through-hole 1H has the same width from the first surface 1A side to the second surface 1B in a cross-sectional view may be used. Using such a ceramic substrate 1X, in accordance with the above-described method, the first conductive paste, the second conductive paste, and optionally the third conductive paste are disposed, removed, and fired. As shown in FIG. 6, the first conductive member 11X having a depression 11j on its surface is disposed in the through-hole 1H. Further, the second conductive member 12X is disposed in a convex shape with respect to the first surface 1A, and the surface of the second conductive member 12X can be made flat over the entire surface without having a depression. Optionally, the third conductive member 13X is disposed in a convex shape with respect to the second surface 1B, and the surface of the third conductive member 13X can be made flat over the entire surface without having a depression. Even with such a method for manufacturing a sintered body substrate, as described above, the bonding strength between the inner wall of the through hole 1H and the first conductive member 11X, the second conductive member 12X, and / or the third conductive member 13X after sintering can be improved. Furthermore, since the depressions on the surface of the second conductive member 12X and / or the third conductive member 13X themselves can be suppressed to make the surface flat, the connection strength with the element electrodes can be strengthened, and a more reliable configuration can be realized by improving the mountability.

[0025] 〔Sintered Body Substrate〕 As shown in FIGS. 3A and 3B, the sintered body substrate 10 according to the embodiment is made of a nitride or oxide ceramic substrate 1, and has, for example, a first surface 1A and a second surface 1B, and a through hole 1C penetrating from the first surface 1A to the second surface 1B. The sintered body substrate 10 includes a first conductive member 11A disposed in the through hole 1C and having a depression 11j near the surface on the first surface 1A side, and a second conductive member 12A disposed at least in the depression 11j. It is preferable that the sintered body substrate 10 further includes a first conductive member 11A disposed in the through hole 1C and having a depression 11j near the surface on the second surface 1B side, and a third conductive member 13A disposed at least in the depression 11j. The first surface 1A is flush with the entire surface of the second conductive member 12A. Both the first conductive member 11A and the second conductive member 12A preferably contain a nitride containing at least one of Ti, Ce, Zr, and Mg, or an oxide containing at least one of Ti, Ce, Zr, and Mg. The second surface 1B is flush with the entire surface of the third conductive member 13A. Both the first conductive member 11A and the third conductive member 13A preferably contain a nitride containing at least one of Ti, Ce, Zr, and Mg, or an oxide containing at least one of Ti, Ce, Zr, and Mg. In FIGS. 3A and 3B, a plating 14 is shown disposed on the second conductive member 12A and the third conductive member 13A, but the plating 14 may not be provided. Also, in FIGS. 3A and 3B, it is shown as having only an area for disposing one light-emitting element, but it may be a substrate having a plurality of areas for disposing one light-emitting element, or may be in the form of an assembly substrate in which a plurality of areas for disposing one or more light-emitting elements are assembled. With such a configuration, high heat dissipation can be achieved, strength can be maintained, the connection strength with the element electrodes can also be strong, and by improving the mountability, a more reliable configuration can be realized.

[0026] 〔Modification of Sintered Body Substrate〕 As described above, as shown in FIG. 6, when the sintered body substrate 10X has the ceramic substrate 1X having no first recess and second recess on the first surface 1A side and the second surface 1B side, respectively, the second conductive member 12X is disposed in a convex shape with respect to the first surface 1A, and the surface of the second conductive member 12X can be made flat over the entire surface without any depressions being disposed thereon. Optionally, the third conductive member 13X is disposed in a convex shape with respect to the second surface 1B, and the surface of the third conductive member 13X can be made flat over the entire surface without any depressions being disposed thereon. With such a configuration, the connection strength with the element electrodes can also be strong, and by improving the mountability, a more reliable configuration can be realized.

[0027] 〔Method for Manufacturing Light-Emitting Device〕 The method for manufacturing a light-emitting device according to the embodiment includes, as shown in FIG. 4, preparing the above-described sintered body substrate 10 (S21) and disposing the light-emitting element 16 that is electrically connected to the second conductive member 12A directly or indirectly (S22). Furthermore, a light reflection member 18 may be disposed (S23) on the sintered body substrate 10. The wiring formed by the second conductive member 12A of the sintered body substrate 10 is very flat because the surface thereof has an arithmetic mean roughness Ra of, for example, 0.01 μm or more and 1.5 μm or less. Therefore, the connection of the electrodes of the light-emitting element or the like can be stably performed. Further, since the wide second conductive member 12A is provided on the first surface 1A side of the sintered body substrate 10 and / or the wide third conductive member 13A is provided on the second surface 1B side, the heat dissipation property on the surface thereof can be made good.

[0028] S21: Preparation of sintered body substrate First, prepare the sintered body substrate 10 manufactured by the above-described method for manufacturing a sintered body substrate. As shown in FIG. 5A, in the sintered body substrate 10, the second conductive member 12A is disposed on the first surface 1A, and optionally, the third conductive member 13A may be disposed on the second surface 1B. The planar shapes of the second conductive member 12A and the third conductive member 13A can be appropriately set according to the form, number of the light-emitting elements to be mounted, the form of the light-emitting device to be obtained, and the like. Further, as described above, the sintered body substrate 10 may have only a region for disposing one light-emitting element, or may be in the form of an integrated substrate. Further, plating 14 may be disposed on the second conductive member 12A, optionally the third conductive member 13A, and further, bumps 15 may be disposed on the plating 14.

[0029] S22: Disposal of light-emitting element As shown in FIG. 5B, the light-emitting element 16 is disposed on the second conductive member 12A of the sintered body substrate 10 directly or indirectly via the plating 14 and / or the bumps 15. (Light-emitting element) The light-emitting element 16 has, for example, an element substrate, a semiconductor laminate, and a pair of element electrodes. The light-emitting element 16 may have a light-transmitting member 17 on the light extraction surface side thereof. The light-emitting element 16 has a semiconductor laminate on an element substrate. In the present embodiment, the light-transmitting member 17 is disposed on the upper surface side that becomes the light extraction surface of the element substrate. On the lower surface side of the element substrate, a semiconductor laminate is provided, and a pair of element electrodes are provided on the semiconductor laminate side. As the semiconductor laminate, any composition can be used according to the emission wavelength to be obtained. For example, a nitride semiconductor (In X Al Y Ga 1-X-Y N, 0≦X, 0≦Y, X + Y≦1), GaP, or GaAlAs, AlInGaP, etc. that can emit red light can be used. Also, the size, shape, etc. of the light-emitting element 16 can be appropriately set according to the purpose of use. As the element substrate, for example, a sapphire substrate, a silicon substrate, a GaN substrate, etc. are used. The thickness of the element substrate is, for example, 20 μm or more and 2 mm or less, preferably 50 μm or more and 500 μm or less, and more preferably 80 μm or more and 160 μm or less. The element substrate is disposed such that its lower surface faces the semiconductor laminate and its upper surface faces the light-transmitting member. It is preferable that the element substrate and the light-transmitting member are directly joined or joined via a joining member. The light-transmitting member 17 can be formed of, for example, a light-transmitting resin material, glass, an inorganic material such as aluminum oxide, a phosphor, etc. As the light-transmitting member 17, an epoxy resin, a silicone resin, or a resin obtained by mixing these can be used. The light-transmitting member 17 may contain a phosphor in a resin material, an inorganic material, etc. For example, by containing a phosphor that absorbs blue light from the light-emitting element 16 and emits yellow light, white light can be emitted. Also, the light-transmitting member 17 may contain a plurality of types of phosphors. For example, it may contain a phosphor that absorbs blue light from the semiconductor laminate and emits green light and a phosphor that emits red light. Thereby, white light can be emitted from the light-emitting device.

[0030] As the phosphor, for example, a yttrium aluminum garnet-based phosphor (for example, Y3(Al,Ga)5O 12:Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :Ce), β-sialon phosphor (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphor (e.g., Mz(Si,Al) 12 (O,N) 16 (where 0 < z ≤ 2, and M is Li, Mg, Ca, Y, and lanthanide elements excluding Ce)), nitride-based phosphors such as CASN-based phosphor (e.g., CaAlSiN3:Eu), SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu), etc., fluoride-based phosphors such as KSF-based phosphor (e.g., K2SiF6:Mn), KSAF-based phosphor (e.g., K2(Si,Al)F6:Mn), MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dot phosphors such as perovskite and chalcopyrite can be used. The element electrodes are connected to the second conductive member 12A which serves as the wiring portion of the sintered body substrate 10 via plating 14 and / or bumps 15. The element electrodes are configured to arrange one p-electrode and one n-electrode, respectively, but may be configured to arrange two of either one and one of the other. The plating 14 and / or the bumps 15 electrically connect the element electrodes and the second conductive member 12A. The bumps 15 may be arranged on either the element electrode side or the second conductive member 12A side. The bumps 15 can be appropriately set in terms of their shape, size, and number as long as they can be arranged within the area range of the element electrodes. The size of the bumps 15 can be appropriately adjusted according to the size of the semiconductor laminate, the required light emission output of the light emitting element, etc., and for example, the size with a diameter of about several tens of μm to several hundreds of μm can be mentioned. The bump 15 can be formed of, for example, Au, Ag, Cu, Al, Sn, Pt, Zn, Ni, or an alloy thereof, and can be formed of a stud bump or the like known in the art. The stud bump can be formed by a stud bump bonder, a wire bonding apparatus, or the like. The bump 15 may be formed by a method known in the art such as electrolytic plating, electroless plating, vapor deposition, sputtering, or the like.

[0031] S23: Arrangement of the light reflecting member 18 As shown in FIG. 5C, the light reflecting member 18 may be arranged on the sintered body substrate 10 on which the light emitting element 16 is arranged. The light reflecting member 18 preferably covers the first surface 1A which is the upper surface of the sintered body substrate 10 and also covers the side surface of the light emitting element 16. Further, it is more preferable to arrange it so as to cover the periphery of the plating and the bump between the sintered body substrate 10 and the light emitting element 16. The light reflecting member 18 may be arranged so as to cover the side surface of the translucent member 17 so as to expose the upper surface of the translucent member 17 which becomes the light extraction surface of the light emitting element 16. The light reflecting member 18 is preferably arranged such that its surface is flush with the surface of the translucent member 17. The light reflecting member 18 preferably has a high reflectivity in order to effectively utilize the light from the light emitting element 16. The reflectivity of the light reflecting member 18 is preferably, for example, 90% or more, more preferably 94% or more, at the wavelength of the light emitted by the light emitting element 16. As the light reflecting member 18, a resin containing a light diffusing material can be used. As the resin used for the light reflecting member, for example, a thermoplastic resin such as an acrylic resin, a polycarbonate resin, a cyclic polyolefin resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, or a polyester resin, or a thermosetting resin such as an epoxy resin or a silicone resin can be used. As the light diffusing material, for example, a known material such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, or glass can be used. After arranging the light reflection member 18, singulation may be performed as necessary. Singulation is performed, for example, by cutting in a grid pattern. Any method known in the art may be used as the cutting method, and examples thereof include a disk-shaped rotary blade, an ultrasonic cutter, and laser light irradiation.

[0032] In the light-emitting device 100 obtained by such a manufacturing method, the surfaces of the second conductive member 12A on the first surface 1A and optionally the third conductive member 13A on the second surface 1B of the sintered body substrate 10 are flat surfaces without irregularities. Therefore, the bonding strength with the element electrodes can be stably ensured, and the reliability of the light-emitting device can be improved. Note that in the light-emitting device 100, one light-emitting element 16 is used as one unit for brightness and lighting control, but a plurality of light-emitting elements 16 may be included in one unit, and each included light-emitting element 16 may be used as a lighting control unit. Regarding the size and number of the light-emitting elements 16, there may be one type with two elements or two or more types with a plurality of elements. For example, four light-emitting elements 16 arranged in one row and four columns or two rows and two columns, or nine light-emitting elements 16 arranged in three rows and three columns, all of the same size, may be used as one unit. Further, a configuration in which light-emitting elements 16 of different sizes are aligned according to their sizes and arranged arbitrarily may be used as one unit.

[0033] This application includes the following inventions. [Item 1] Preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating from the first surface to the second surface; Disposing a first conductive paste containing an active metal powder in the through hole; Drying the first conductive paste; Removing at least a part of the surface of the first conductive paste on the first surface side; Disposing a second conductive paste containing an active metal powder on the first conductive paste on the first surface side; Firing the first conductive paste and the second conductive paste to form a first conductive member and a second conductive member; A method for manufacturing a sintered body substrate, which comprises removing at least a part of the surface of the second conductive member on the first surface side to make the first surface and the entire surface of the second conductive member flush. [Item 2] After drying the first conductive paste, removing at least a part of the surface of the first conductive paste on the second surface side; Disposing a third conductive paste containing active metal powder on the first conductive paste on the second surface side; In making the first conductive member and the second conductive member, firing the first conductive paste and the second conductive paste, and firing the third conductive paste to make a third conductive member; The method for manufacturing a sintered body substrate according to item 1, which comprises removing at least a part of the surface of the third conductive member on the second surface side to make the second surface and the entire surface of the third conductive member flush. [Item 3] The method for manufacturing a sintered body substrate according to item 1 or item 2, which further comprises disposing plating on the surface of the second conductive member after making the first surface and the surface of the second conductive member flush. [Item 4] The method for manufacturing a sintered body substrate according to any one of items 1 to 3, wherein in preparing the ceramic substrate, the through hole is formed by laser processing. [Item 5] The method for manufacturing a sintered body substrate according to any one of items 1 to 4, wherein in preparing the ceramic substrate, the through hole has a first recess provided on the first surface side, a second recess provided on the second surface side, and a first through hole that penetrates from the first recess to the second recess and is narrower in width than the first recess and the second recess. [Item 6] The method for manufacturing a sintered body substrate according to any one of items 1 to 5, wherein in disposing the first conductive paste, the content of the active metal powder contained in the first conductive paste is 1 part by weight or more and 20 parts by weight or less. [Item 7] In placing the first conductive paste, the first conductive paste contains metal powder, and the metal powder contained in the first conductive paste includes at least one of Ag, Al, Zn, Sn, and Ag-Cu alloy powder. The method for manufacturing a sintered body substrate according to any one of claims 1 to 6. [Claim 8] In placing the first conductive paste, the metal powder contained in the first conductive paste further includes at least one of Cu, Cr, and Ni. The method for manufacturing a sintered body substrate according to claim 7. [Claim 9] In placing the first conductive paste, the active metal powder contained in the first conductive paste includes at least one of TiH2, CeH2, ZrH2, and MgH2. The method for manufacturing a sintered body substrate according to any one of claims 1 to 8. [Claim 10] In placing the first conductive paste, the first conductive paste contains an inorganic filler. The method for manufacturing a sintered body substrate according to any one of claims 1 to 9. [Claim 11] In placing the first conductive paste, the inorganic filler contained in the first conductive paste includes at least one of nitride ceramic fillers. The method for manufacturing a sintered body substrate according to any one of claims 1 to 10. [Claim 12] In making the first conductive member and the second conductive member, the firing temperature is 780°C or higher and 1100°C or lower. The method for manufacturing a sintered body substrate according to any one of claims 1 to 11. [Claim 13] In making the first conductive member and the second conductive member, the firing atmosphere is a vacuum atmosphere of 10 -5 Pa or less or an Ar atmosphere of 99.9% or more. The method for manufacturing a sintered body substrate according to any one of claims 1 to 12. [Claim 14] Preparing a sintered body substrate by the method for manufacturing a sintered body substrate according to any one of claims 1 to 13, and Placing a light-emitting element that is electrically connected to the second conductive member directly or indirectly. A method for manufacturing a light-emitting device including this. [Item 15] A nitride or oxide ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through-hole penetrating from the first surface to the second surface; A first conductive member disposed in the through-hole and having a depression near the surface on the first surface side; And a second conductive member disposed at least in the depression, wherein the first surface and the entire surface of the second conductive member are flush; The first conductive member and the second conductive member each include a sintered body substrate containing a nitride containing at least one of Ti, Ce, Zr, and Mg, or an oxide containing at least one of Ti, Ce, Zr, and Mg. [Item 16] The sintered body substrate according to Item 15, further having plating on the surface of the second conductive member. [Item 17] The sintered body substrate according to Item 15 or Item 16, wherein the nitride or the oxide contained in the first conductive member is disposed in a layered manner at the interface with the ceramic substrate. [Item 18] The sintered body substrate according to any one of Items 15 to 17, wherein the first conductive member contains at least one of Ag, Al, Zn, Sn, and an Ag-Cu alloy. [Item 19] The sintered body substrate according to any one of Items 15 to 18, wherein the first conductive member further contains at least one of Cu, Cr, and Ni. [Item 20] The sintered body substrate according to any one of Items 15 to 19, wherein the first conductive member further contains a nitride ceramic filler, and the second conductive member does not contain a nitride ceramic filler. [Item 21] A sintered body substrate according to any one of Items 15 to 20; And a light-emitting device electrically connected directly or indirectly through plating to the second conductive member.

Industrial Applicability

[0034] The manufacturing method of the sintered body substrate and the light emitting device according to the embodiments of the present disclosure, the sintered body substrate and the light emitting device can be used in a light distribution variable type headlamp light source, a backlight light source of a liquid crystal display, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, digital video cameras, facsimiles, copying machines, image reading devices such as scanners, and projector devices.

Explanation of reference numerals

[0035] 1, 1X Ceramic substrate 1A First surface 1B Second surface 1C, 1H Through hole 1F First through hole 1D First recess 1E Second recess 10, 10X Sintered body substrate 11 First conductive paste 11A, 11X First conductive member 11g, 11j Depression 12 Second conductive paste 12A, 12X Second conductive member 12g Depression 13 Third conductive paste 13A, 13X Third conductive member 13g Depression 14 Plating 15 Bump 16 Light emitting element 17 Translucent member 18 Light reflecting member 100 Light emitting device

Claims

1. Preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating from the first surface to the second surface; Disposing a first conductive paste containing active metal powder in the through hole; Drying the first conductive paste; Removing at least a part of the surface of the first conductive paste on the first surface side; Disposing a second conductive paste containing active metal powder on the first conductive paste on the first surface side; Firing the first conductive paste and the second conductive paste to form a first conductive member and a second conductive member; A method for manufacturing a sintered body substrate, comprising removing at least a part of the surface of the second conductive member on the first surface side so that the first surface and the entire surface of the second conductive member are flush.

2. After drying the first conductive paste, removing at least a part of the surface of the first conductive paste on the second surface side; Disposing a third conductive paste containing active metal powder on the first conductive paste on the second surface side; In forming the first conductive member and the second conductive member, firing the first conductive paste and the second conductive paste, and firing the third conductive paste to form a third conductive member; The method for manufacturing a sintered body substrate according to claim 1, comprising removing at least a part of the surface of the third conductive member on the second surface side so that the second surface and the entire surface of the third conductive member are flush.

3. The method for manufacturing a sintered body substrate according to claim 1, further comprising disposing plating on the surface of the second conductive member after making the first surface and the surface of the second conductive member flush.

4. The method for manufacturing a sintered body substrate according to claim 1, wherein in preparing the ceramic substrate, the through hole is formed by laser processing.

5. The method for manufacturing a sintered body substrate according to claim 1, wherein in preparing the ceramic substrate, the through hole has a first recess provided on the first surface side, a second recess provided on the second surface side, and a first through hole penetrating from the first recess to the second recess and having a width narrower than that of the first recess and the second recess.

6. The method for manufacturing a sintered body substrate according to claim 1, wherein in disposing the first conductive paste, the content of the active metal powder contained in the first conductive paste is 1 part by weight or more and 20 parts by weight or less.

7. In placing the first conductive paste, the first conductive paste contains metal powder, and the metal powder contained in the first conductive paste includes at least one of Ag, Al, Zn, Sn, and Ag—Cu alloy powder. The method for manufacturing a sintered body substrate according to claim 1.

8. In placing the first conductive paste, the metal powder contained in the first conductive paste further includes at least one of Cu, Cr, and Ni. The method for manufacturing a sintered body substrate according to claim 7.

9. In arranging the first conductive paste, the active metal powder contained in the first conductive paste is TiH ２ , CeH ２ , ZrH ２ , and at least one of MgH ２ The method for manufacturing a sintered body substrate according to claim 1, which contains a kind of.

10. In placing the first conductive paste, the first conductive paste contains an inorganic filler. The method for manufacturing a sintered body substrate according to claim 1.

11. In placing the first conductive paste, the inorganic filler contained in the first conductive paste includes at least one of nitride ceramic fillers. The method for manufacturing a sintered body substrate according to claim 10.

12. In using the first conductive member and the second conductive member, the firing temperature is 780° C. or higher and 1100° C. or lower. The method for manufacturing a sintered body substrate according to claim 1.

13. In the case of using the first conductive member and the second conductive member, the firing atmosphere is a vacuum atmosphere of 10 －５ Pa or less or an Ar atmosphere of 99.9% or more. The method for manufacturing a sintered body substrate according to claim 1.

14. Preparing a sintered body substrate by the method for manufacturing a sintered body substrate according to claim 1 or claim 2, and placing a light-emitting element that is electrically connected directly or indirectly to the second conductive member. A method for manufacturing a light-emitting device including these steps.

15. A nitride or oxide ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating from the first surface to the second surface, a first conductive member disposed in the through hole and having a depression near the surface on the first surface side, and a second conductive member disposed at least in the depression, wherein the first surface and the entire surface of the second conductive member are flush, and each of the first conductive member and the second conductive member includes a nitride containing at least one of Ti, Ce, Zr, and Mg, or an oxide containing at least one of Ti, Ce, Zr, and Mg. A sintered body substrate.

16. Furthermore, the sintered body substrate according to claim 15, wherein the surface of the second conductive member has plating.

17. The nitride or oxide contained in the first conductive member is disposed in a layered manner at the interface with the ceramic substrate. The sintered body substrate according to claim 15.

18. The sintered body substrate according to claim 15, wherein the first conductive member contains at least one of Ag, Al, Zn, Sn, and an Ag—Cu alloy.

19. The sintered body substrate according to claim 18, wherein the first conductive member further contains at least one of Cu, Cr, and Ni.

20. The sintered body substrate according to claim 15, wherein the first conductive member further contains a nitride ceramic filler, and the second conductive member does not contain a nitride ceramic filler.

21. A light-emitting device having the sintered body substrate according to claim 15, and a light-emitting element electrically connected directly or indirectly via plating to the second conductive member.

Images