Manufacturing method of light-emitting apparatus

Abstract

To provide a manufacturing method of a light-emitting apparatus capable of improving the light extraction efficiency.SOLUTION: A manufacturing method of a light-emitting apparatus comprises the steps of: preparing a first structure comprising a wavelength conversion member having a first face and a second face which is positioned at an opposite side to the first face, a plurality of light-emitting sections disposed at the side of the first face, and a translucent member disposed at the side of the second face and including a third face opposed to the second face and a fourth face positioned at the opposite side to the third face; irradiating a first region of the translucent member positioned between the light-emitting sections adjacent to each other in a planar view vertical to the fourth face with laser light from the side of the fourth face to form a first modified part in the first region; roughening the fourth face of the translucent member after the step of forming the first modified part; irradiating a second region of the wavelength conversion member overlapped with the first region in the planar view with laser light from the side of the first face to form a second modified part in the second region after the step of roughening the fourth face; and dividing the first structure along the first modified part and the second modified part.SELECTED DRAWING: Figure 13

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a light-emitting device.

Background Art

[0002] Patent Document 1 discloses a method for manufacturing a light-emitting device, in which a phosphor-containing layer and a clear layer are formed on a surface of a transparent substrate provided with a light-emitting portion, opposite to the light-emitting portion, and then the transparent substrate, the phosphor-containing layer, and the clear layer are cut.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a method for manufacturing a light-emitting device capable of improving light extraction efficiency.

Means for Solving the Problems

[0005] According to one aspect of the disclosed technology, a method for manufacturing a light-emitting device includes preparing a first structure having a wavelength conversion member having a first surface and a second surface located on the side opposite to the first surface, a plurality of light-emitting portions disposed on the first surface side, and a light-transmitting member disposed on the second surface side and having a third surface facing the second surface and a fourth surface located on the side opposite to the third surface; irradiating laser light from the fourth surface side to a first region of the light-transmitting member located between the adjacent light-emitting portions in a plan view perpendicular to the fourth surface to form a first modified portion in the first region; after the step of forming the first modified portion, roughening the fourth surface of the light-transmitting member; after the step of roughening the fourth surface, irradiating laser light from the first surface side to a second region of the wavelength conversion member overlapping the first region in the plan view to form a second modified portion in the second region; and cutting the first structure along the first modified portion and the second modified portion.

Advantages of the Invention

[0006] According to the present disclosure, the luminance can be improved.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. The following description is for embodying the technical idea of the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following description.

[0009] In the respective drawings, members having the same function may be denoted by the same reference numerals. For the sake of easy explanation or understanding of the gist, they may be shown separately in embodiments for convenience, but partial substitution or combination of the configurations shown in different embodiments or examples is possible. In the embodiments described later, mainly the matters different from the previously described embodiments will be explained, and redundant explanations for the matters common to the previously described embodiments may be omitted. The sizes, positional relationships, etc. of the members shown in each drawing may be exaggerated for clarity of the explanation. In order to avoid excessive complexity of the drawings, illustration of some elements may be omitted, or an end view showing only the cut surface as a cross-sectional view may be used.

[0010] This embodiment relates to a method of manufacturing a light-emitting device. FIGS. 1 to 14 are cross-sectional views illustrating a method of manufacturing a light-emitting device according to the embodiment.

[0011] First, as shown in FIG. 1, a wafer 20 is prepared. The wafer 20 has a substrate 11 and a plurality of light-emitting portions 10. The substrate 11 has a main surface 11a. The plurality of light-emitting portions 10 are arranged spaced apart on the main surface 11a. In the following description, in the direction orthogonal to the main surface 11a, the length in the direction toward the light-emitting portion 10 may be referred to as the height or thickness.

[0012] The plurality of light-emitting units 10 each include a first semiconductor part 10n, an active part 10a, and a second semiconductor part 10p that are stacked on one another. The active part 10a is positioned between the first semiconductor part 10n and the second semiconductor part 10p. In the present embodiment, the first semiconductor part 10n includes an n-type semiconductor, and the second semiconductor part 10p includes a p-type semiconductor. The active part 10a can have a multiple quantum well structure including a plurality of barrier layers and a plurality of well layers, with the barrier layers and the well layers alternately stacked. The plurality of light-emitting units 10 are formed, for example, as follows. That is, after stacking a semiconductor structure including the first semiconductor part 10n, the active part 10a, and the second semiconductor part 10p on a substrate 11, a resist mask is formed on each of the regions of the semiconductor structure that are to be the plurality of light-emitting units 10. Then, the plurality of light-emitting units 10 can be formed by removing a part of the semiconductor structure using the resist mask. For example, reactive ion etching (RIE) can be used for removing the semiconductor structure. For example, in plan view, the light-emitting unit 10 is rectangular. When the light-emitting unit 10 is rectangular in plan view, the length of one side is, for example, 50 μm or more and 2000 μm or less.

[0013] The light-emitting unit 10 is made of a nitride semiconductor layer. The nitride semiconductor includes all semiconductors having composition ratios x and y varied within their respective ranges in the chemical formula In x Al y Ga 1-x-y N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, x + y ≤ 1).

[0014] For example, the light-emitting unit 10 is formed by metal organic chemical vapor deposition (MOCVD). The light-emitting unit 10 is formed in the order of the first semiconductor part 10n, the active part 10a, and the second semiconductor part 10p from the main surface 11a.

[0015] As will be described later with reference to FIG. 15, the light-emitting portions 10 are arranged in a matrix on the main surface 11a in a plan view. In this specific example, the adjacent light-emitting portions 10 are connected via the connection portions 19. The connection portions 19 are arranged on the main surface 11a, similarly to the light-emitting portions 10. The connection portion 19 is continuous with the first semiconductor portion 10n and is formed of a semiconductor layer containing an n-type semiconductor. The connection portion 19 is, for example, a portion that remains without removing a part of the semiconductor layer containing an n-type semiconductor in the removal of the semiconductor structure in the process of forming the plurality of light-emitting portions 10 described above. Note that the connection portion 19 may not be formed.

[0016] The light-emitting portion 10 has a concave portion R. For example, the concave portion R is located near the center of the light-emitting portion 10 in a plan view. The concave portion R is defined by the side surface of the first semiconductor portion 10n, the side surface of the active portion 10a, the side surface of the second semiconductor portion 10p, and the upper surface of the first semiconductor portion 10n. Among the surfaces defining the concave portion R, the side surface of the first semiconductor portion 10n, the side surface of the active portion 10a, and the side surface of the second semiconductor portion 10p are inclined surfaces that are inclined with respect to the main surface 11a. The concave portion R can be formed, for example, by forming a resist mask on a region of the light-emitting portion 10 excluding the region to be the concave portion R and then removing a part of the nitride semiconductor layer using the resist mask.

[0017] The first semiconductor portion 10n has an exposed portion S that is exposed from the second semiconductor portion 10p and the active portion 10a. The height from the main surface 11a to the exposed portion S is substantially the same as the height from the main surface 11a to the upper surface of the first semiconductor portion 10n on the surface defining the concave portion R. The exposed portion S is arranged around the second semiconductor portion 10p and the active portion 10a. The exposed portion S can be formed by the same process as the process of forming the concave portion R described above. For example, after forming a resist mask on a region of the light-emitting portion 10 excluding the region to be the concave portion R and the region to be the exposed portion S, a part of the nitride semiconductor layer can be removed using the resist mask. Note that after laminating a nitride semiconductor layer on the substrate 11 and forming the concave portion R and the exposed portion S in each region to be the light-emitting portion 10, the nitride semiconductor layer may be separated into a plurality of light-emitting portions 10.

[0018] The light-emitting part 10 from the main surface 11a to the exposed part S is composed of a first semiconductor part 10n. The side surface of the first semiconductor part 10n is an inclined surface that is inclined with respect to the main surface 11a. The light-emitting part 10 is located on the first semiconductor part 10n and has a laminate including an active part 10a and a second semiconductor part 10p. The side surface of this laminate is an inclined surface that is inclined with respect to the main surface 11a.

[0019] On the second semiconductor part 10p, a p-side electrode 12 is disposed. The p-side electrode 12 is electrically connected to the second semiconductor part 10p. The p-side electrode 12 preferably has a reflectivity of 60% or more, preferably 70% or more, with respect to the light having the peak wavelength emitted by the active part 10a. By doing so, the p-side electrode 12 can reflect the light from the active part 10a toward the second semiconductor part 10p side to the first semiconductor part 10n side, and the light extraction efficiency can be improved. As the metal material of the p-side electrode 12, metal materials such as Ag, Al, Rh, Ni, Ti, Pt, or alloys mainly composed of them can be used. The p-side electrode 12 may have a single-layer structure of a layer made of these metal materials, or may have a laminated structure in which a plurality of layers are laminated. Further, as the p-side electrode 12, a transparent conductive film such as indium tin oxide (ITO), zinc oxide (ZnO), indium oxide In2O3, etc. may be used. The p-side electrode 12 can be formed, for example, by a sputtering method or a vapor deposition method.

[0020] On the second semiconductor part 10p and on the p-side electrode 12, a first insulating film 15 is disposed. The first insulating film 15 has an opening that exposes a part of the p-side electrode 12. For example, the first insulating film 15 is a silicon oxide film or a silicon nitride film. The first insulating film 15 can be formed, for example, by a sputtering method or a vapor deposition method. After forming the first insulating film 15, an opening can be formed in the first insulating film 15 by removing a part of the first insulating film 15. The removal of the first insulating film 15 can be formed, for example, by wet etching or dry etching.

[0021] The second insulating film 16 is disposed on the side surface of the second semiconductor portion 10p, on the side surface of the active portion 10a, and on the first insulating film 15. The second insulating film 16 is disposed on the exposed portion S and on the side surface of the first semiconductor portion 10n. The second insulating film 16 has an opening that exposes a part of the p-side electrode 12 and an opening that is located within the recess R and exposes a part of the upper surface of the first semiconductor portion 10n. The second insulating film 16 is, for example, a silicon oxide film or a silicon nitride film. The second insulating film 16 can be formed, for example, by a sputtering method or a vapor deposition method. After forming the second insulating film 16, an opening can be formed in the second insulating film 16 by removing a part of the second insulating film 16. The removal of the second insulating film 16 can be formed, for example, by wet etching, dry etching, or the like.

[0022] The first conductive member 14 is disposed on the second insulating film 16 and is electrically connected to the first semiconductor portion 10n through an opening of the second insulating film 16 located within the recess R. The first conductive member 14 can be formed, for example, by a sputtering method, a vapor deposition method, or the like.

[0023] The second conductive member 13 is disposed on the second insulating film 16 and is electrically connected to the p-side electrode 12 exposed from the opening of the first insulating film 15 and the opening of the second insulating film 16. The second conductive member 13 is electrically connected to the second semiconductor portion 10p through the p-side electrode 12. The second conductive member 13 can be formed, for example, by a sputtering method, a vapor deposition method, or the like.

[0024] As materials for the first conductive member 14 and the second conductive member 13, metal materials such as Al, Rh, Ag, Ti, Pt, Au, Cu, Si, semiconductor materials, or alloys mainly composed of these can be used. The first conductive member 14 and the second conductive member 13 may have a single-layer structure of a layer made of these metal materials, or may have a laminated structure in which a plurality of layers are laminated. The first conductive member 14 and the second conductive member 13 may have the same material and the same structure, or may have different materials and different structures.

[0025] Next, as shown in FIG. 2, the resin member 18 is disposed on the wafer 20. For example, after the resin member 18 is disposed on the support substrate 21, the wafer 20 and the support substrate 21 are joined via the resin member 18 in a state where the resin member 18 is positioned between the substrate 11 and the support substrate 21. Through such a process, the resin member 18 is formed so as to cover the side surface of the light-emitting portion 10, the second insulating film 16, the first conductive member 14, and the second conductive member 13. The resin member 18 is also disposed between two adjacent light-emitting portions 10. That is, the resin member 18 is disposed on the main surface 11a of the substrate 11. In the example of FIG. 2, it is disposed on the main surface 11a via the connection portion 19, but when the connection portion 19 is not disposed, the resin member 18 is disposed in contact with the main surface 11a of the substrate 11. For the resin member 18, for example, an epoxy resin, an acrylic resin, a polyimide resin, or the like can be used.

[0026] The support substrate 21 is disposed on the resin member 18, and the support substrate 21 is joined to the resin member 18. For the support substrate 21, for example, a sapphire substrate, a silicon substrate, or the like can be used. The support substrate 21 is an example of the first substrate.

[0027] Next, as shown in FIG. 3, the substrate 11 is removed from the wafer 20 on which the resin member 18 and the support substrate 21 are disposed. In the present embodiment, after the removal of the substrate 11, a part of the first semiconductor portion 10n is removed, so that the connection portion 19 shown in FIGS. 1 and 2 is removed, and a part of the light-emitting portion 10 and a part of the resin member 18 are exposed. Note that in FIG. 3, the display is inverted vertically with respect to the displays in FIGS. 1 and 2. In FIGS. 1 and 2, the light-emitting portion 10 is disposed below the support substrate 21, whereas in FIG. 3, the light-emitting portion 10 is disposed above the support substrate 21. Similarly, for FIGS. 4 to 14 described later, the display is inverted vertically with respect to FIGS. 1 and 2.

[0028] For the removal of the substrate 11, methods such as Laser Lift Off (LLO), grinding, polishing, or etching are used. When the substrate 11 is a sapphire substrate, it is preferable to remove the substrate 11 by the LLO method. The light-emitting portion 10 after the removal of the substrate 11 has a fifth surface 10d facing the support substrate 21 and a sixth surface 10b located on the side opposite to the fifth surface 10d. The sixth surface 10b is the exposed surface of the light-emitting portion 10 exposed by the removal of the substrate 11. Also, the exposed surface of the resin member 18 exposed by removing the light-emitting portion 10 is referred to as the resin upper surface 18a, and the surface located on the side opposite to the resin upper surface 18a is referred to as the resin lower surface 18b.

[0029] In this way, an intermediate member 31 having the support substrate 21, the resin member 18, and the plurality of light-emitting portions 10 is obtained. The intermediate member 31 is an example of the second structure.

[0030] Next, as shown in FIG. 4, the sixth surface 10b is roughened. By this roughening step, an intermediate member 32 including the light-emitting portion 10 having the roughened sixth surface 10c is formed. By roughening the sixth surface 10b, which is the main light extraction surface of the light-emitting portion 10, to obtain the sixth surface 10c, the light extraction efficiency of the light-emitting device can be improved. For the roughening of the sixth surface 10b, for example, RIE using a gas containing chlorine or wet etching using an alkaline solution such as Tetramethyl Ammonium Hydroxide (TMAH) can be used. The arithmetic mean roughness Ra of the sixth surface 10b before performing the roughening step is, for example, 0.1 nm or more and 0.5 nm or less. The arithmetic mean roughness Ra of the sixth surface 10c after performing the roughening step is, for example, 100 nm or more and 250 nm or less.

[0031] As described above, although it is preferable to roughen the sixth surface 10b, it is not necessarily required to roughen it. By omitting the roughening of the sixth surface 10b, the manufacturing process of the light-emitting device can be shortened.

[0032] FIG. 15 is a plan view illustrating a method of manufacturing a light-emitting device according to an embodiment. FIG. 15 shows a state after performing the step of roughening the above-described sixth surface 10b. FIG. 15 shows an intermediate member 32 in which the roughened sixth surface 10c is exposed. As shown in FIG. 15, the light-emitting portions 10 with the sixth surface 10c exposed are arranged in a matrix. The resin member 18 is disposed between adjacent light-emitting portions 10, and the resin upper surface 18a is exposed from the light-emitting portions 10.

[0033] In a plan view, the outer edge of each sixth surface 10c of the plurality of light-emitting portions 10 is referred to as an outer edge 10t. In this example, the outer shape of the outer edge 10t is substantially rectangular. In a plan view, the end portion of the resin upper surface 18a that overlaps the outer edge 10t is referred to as a resin end portion 18t.

[0034] In a plan view, a planned separation line 30 is set between adjacent light-emitting portions 10. The planned separation line 30 is a virtual line set to cut the later-described light-transmitting member 24, wavelength conversion member 23, and dielectric film 22 and to separate the plurality of light-emitting devices 1. A plurality of planned separation lines 30 are set along two directions orthogonal to each other.

[0035] Next, as shown in FIG. 5, a dielectric film 22 is formed to continuously cover a part of the light-emitting portion 10 and a part of the resin member 18. The dielectric film 22 is formed so as to cover the sixth surface 10c of the light-emitting portion 10, the resin upper surface 18a of the resin member 18, and the side surface of the resin member 18 from the resin end portion 18t to the resin upper surface 18a. The thickness of the dielectric film 22 is, for example, 1 μm or more and 50 μm or less. Thereby, it is possible to shorten the time required for the step of making the upper surface of the dielectric film 22 described later closer to flatness while ensuring a sufficient arithmetic mean roughness Ra. Note that FIG. 5 shows the state of the dielectric film 22 after performing the step of making the upper surface of the dielectric film 22 described later closer to flatness. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 before performing the step of making the upper surface of the dielectric film 22 closer to flatness is larger than the arithmetic mean roughness Ra of the upper surface of the dielectric film 22 after performing the step of making the upper surface of the dielectric film 22 closer to flatness.

[0036] The dielectric film 22 is preferably a dielectric film of an inorganic material. The dielectric film 22 has translucency and transmits the light emitted from the active part 10a of the light-emitting part 10. The dielectric film 22 preferably has a transmittance of 60% or more, preferably 70% or more, with respect to the light having the peak wavelength emitted by the active part 10a. The dielectric film 22 is a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film. The dielectric film 22 may be a laminate of one or more of these. Also, the dielectric film 22 may contain one or more composite materials of silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide. Nb may be added to the aluminum oxide. For the formation of the dielectric film 22, for example, a Chemical Vapor Deposition (CVD) method or the like can be used. The dielectric film 22 preferably includes a film having a value between the refractive index of the light-emitting part 10 and the refractive index of the wavelength conversion member 23 described later. By doing so, good light extraction efficiency can be obtained. For example, the dielectric film 22 includes a film having a refractive index value lower than that of the light-emitting part 10. For example, the refractive index of the dielectric film 22 is lower than the refractive index of the light-emitting part 10 and higher than the refractive index of the wavelength conversion member 23.

[0037] After the formation of the dielectric film 22, the upper surface of the dielectric film 22 is made closer to being flat. For the method of making the upper surface of the dielectric film 22 closer to being flat, for example, Chemical Mechanical Polishing (CMP) can be used. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 before performing the step of making the upper surface of the dielectric film 22 closer to being flat is, for example, 50 nm or more and 200 nm or less. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 after performing the step of making the upper surface of the dielectric film 22 closer to being flat is, for example, 0.1 nm or more and 0.5 nm or less. In this specification, making closer to being flat means making the arithmetic mean roughness Ra of the surface to be made closer to being flat closer to 0.

[0038] The dielectric film 22 can be made to have an upper surface 22a that is nearly flat, for example, by polishing about one-third of the formed thickness. For example, after forming the dielectric film 22 to a thickness of about 10 μm, the upper surface 22a that is nearly flat can be obtained by polishing about 3 μm out of the 10 μm thickness.

[0039] Next, as shown in FIG. 6, the wavelength conversion member 23 is disposed on the upper surface 22a of the dielectric film 22 that has been made nearly flat. The wavelength conversion member 23 is directly bonded to the upper surface 22a of the dielectric film 22 that has been made nearly flat. The wavelength conversion member 23 has a first surface 23a facing the upper surface 22a of the dielectric film 22 and a second surface 23b located on the side opposite to the first surface 23a.

[0040] For the direct bonding between the dielectric film 22 and the wavelength conversion member 23, for example, the Surface Activated Bonding (SAB) method can be used. In SAB, after activating the upper surface 22a, which is the bonding surface of the dielectric film 22, and the first surface 23a, which is one of the bonding surfaces of the wavelength conversion member 23, by surface treatment, the dielectric film 22 and the wavelength conversion member 23 are directly bonded. As a method for activating the upper surface 22a of the dielectric film 22 and the first surface 23a of the wavelength conversion member 23, for example, a surface treatment of irradiating each bonding surface with an ion beam containing ions such as Ar in a vacuum can be used. By directly bonding the dielectric film 22 and the wavelength conversion member 23, compared with the case of using an adhesive containing a resin, for example, light absorption by the adhesive can be eliminated and the light extraction efficiency can be improved. In direct bonding, a higher bonding strength can be obtained by applying a sufficient load between the upper surface 22a of the dielectric film 22 and the first surface 23a of the wavelength conversion member 23. When performing direct bonding, it is preferable to carry out the process in a state where the arithmetic mean roughness Ra of the bonding surface is lower, for example, the arithmetic mean roughness Ra is 0.1 nm or more and 0.5 nm or less. By doing so, a sufficient load can be applied between the bonding surfaces and bonding can be achieved with a high bonding strength.

[0041] As the wavelength conversion member 23, a sintered body of a phosphor, a material in which a phosphor is contained in a resin (binder) such as an epoxy resin or a silicone resin, or the like can be used. The sintered body of the phosphor is a member obtained by sintering the phosphor together with ceramics such as aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide, and titanium oxide, and refers to a member that does not contain a resin. By using the sintered body of the phosphor for the wavelength conversion member 23, the heat dissipation property of the phosphor is improved compared to a material in which the phosphor is contained in a resin (binder), so that a decrease in the wavelength conversion efficiency can be reduced. The phosphor is a yttrium aluminum garnet-based phosphor (for example, Y3(Al,Ga)5O 12 :Ce), a lutetium aluminum garnet-based phosphor (for example, Lu3(Al,Ga)5O 12 :Ce), a terbium aluminum garnet-based phosphor (for example, Tb3(Al,Ga)5O 12 :Ce), a β-sialon-based phosphor (for example, (Si,Al)3(O,N)4:Eu), an α-sialon phosphor (for example, Ca(Si,Al) 12 (O,N) 16 :Eu), a CASN-based phosphor (for example, CaAlSiN3:Eu) or an SCASN-based phosphor (for example, (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, a KSF-based phosphor (for example, K2SiF6:Mn), a KSAF-based phosphor (for example, K2(Si,Al)F6:Mn) or an MGF-based phosphor (for example, 3.5MgO·0.5MgF2·GeO2:Mn) and other fluoride-based phosphors, a phosphor having a perovskite structure (for example, CsPb(F,Cl,Br,I)3), or a quantum dot phosphor (for example, CdSe, InP, AgInS2 or AgInSe2) or the like can be used. For example, the dielectric film 22 has a refractive index higher than that of the wavelength conversion member 23. The thickness of the wavelength conversion member 23 is, for example, 100 μm or more and 400 μm or less, preferably 120 μm or more and 300 μm or less, and more preferably 130 μm or more and 260 μm or less.

[0042] Next, as shown in FIG. 7, a light-transmitting member 24 is disposed on the wavelength conversion member 23. The light-transmitting member 24 is directly bonded to the wavelength conversion member 23. The light-transmitting member 24 has a third surface 24a facing the second surface 23b and a fourth surface 24b located on the side opposite to the third surface 24a.

[0043] For the direct bonding between the wavelength conversion member 23 and the light-transmitting member 24, for example, the above-described SAB can be used. In the SAB, after the second surface 23b, which is the other bonding surface of the wavelength conversion member 23, and the third surface 24a, which is the bonding surface of the light-transmitting member 24, are activated by surface treatment, the wavelength conversion member 23 and the light-transmitting member 24 are directly bonded. By directly bonding the wavelength conversion member 23 and the light-transmitting member 24, compared with the case of using an adhesive containing a resin, for example, light absorption by the adhesive can be eliminated and the light extraction efficiency can be improved.

[0044] A sapphire substrate or the like can be used for the light-transmitting member 24. The light-transmitting member 24 preferably has a transmittance of 60% or more, preferably 70% or more, with respect to the light having the peak wavelength emitted from the active portion 10a. The thickness of the light-transmitting member 24 is, for example, 10 μm or more and 100 μm or less, preferably 15 μm or more and 90 μm or less, and more preferably 20 μm or more and 80 μm or less.

[0045] In this way, an intermediate member 33 having a plurality of light-emitting portions 10, a dielectric film 22, a wavelength conversion member 23, and a light-transmitting member 24 is obtained. The intermediate member 33 is an example of the first structure.

[0046] Next, as shown in FIG. 8, a modified portion M1 is formed in the light-transmitting member 24. The modified portion M1 is formed by irradiating the light-transmitting member 24 with a laser beam L1. The laser beam L1 is, for example, a pulsed laser beam. In this case, the pulse width is, for example, 100 fs or more and 10 ps or less, preferably 100 fs or more and less than 3 ps. The peak wavelength of the laser beam L1 is a peak wavelength that can transmit through the substrate 11, and is, for example, 350 nm or more and 1100 nm or less, preferably 700 nm or more and less than 1100 nm. The spot diameter of the laser beam L1, that is, the minimum beam diameter, is, for example, 1 μm or more and 10 μm or less, preferably 1 μm or more and less than 5 μm. The laser beam L1 is irradiated onto a first region 41 located between the light-emitting portions 10 in a plan view of the light-transmitting member 24 along a singulation planned line 30 shown in FIG. 15 continuously or at regular intervals. The laser beam L1 is irradiated onto the light-transmitting member 24 from the side of the fourth surface 24b which is the upper surface of the light-transmitting member 24. By condensing the laser beam L1 inside the light-transmitting member 24 while scanning along the singulation planned line 30, the modified portion M1 is formed inside the light-transmitting member 24. Thereby, a plurality of modified portions M1 are formed inside the light-transmitting member 24 along the singulation planned line 30. The modified portion M1 is a region where the density, refractive index, mechanical strength, and other physical properties are different from those of the surrounding unmodified region. Also, for example, the modified portion M1 is a portion of the light-transmitting member 24 that has lower light transmittance than the unmodified region. For example, the modified portion M1 has a lower mechanical strength than the unmodified region in the light-transmitting member 24. Cracks extending in the direction of the third surface 24a and the direction of the fourth surface 24b are formed from the modified portion M1.

[0047] Next, as shown in FIG. 9, a coating film 25 is formed on the light-transmitting member 24, and a first mask 26 is formed on the coating film 25. For example, the coating film 25 is a silicon oxide film, a Ni film, a Cr film, or the like. A plurality of openings are formed in the first mask 26.

[0048] Next, as shown in FIG. 10, by etching the coating film 25 using the first mask 26, a plurality of openings are formed in the coating film 25. Thereafter, the first mask 26 is removed. In this way, a second mask 27 is obtained from the coating film 25.

[0049] Next, as shown in FIG. 11, by etching the fourth surface 24b of the light-transmitting member 24 using the second mask 27, a plurality of concave portions 24r are formed on the fourth surface 24b of the light-transmitting member 24. In this way, the fourth surface 24b is roughened, and the light-transmitting member 24 comes to have a roughened fourth surface 24c. The arithmetic mean roughness Ra of the fourth surface 24c after the roughening process is, for example, 100 nm or more and 800 nm or less, and preferably 150 nm or more and 300 nm or less.

[0050] Note that the first mask 26 formed on the coating film 25 can be formed in island shapes spaced apart from each other, and by etching the coating film 25, the shape of the second mask 27 can be made into island shapes spaced apart from each other. Thereafter, by etching the fourth surface 24b of the light-transmitting member 24 using the second mask 27, a plurality of convex portions may be formed on the fourth surface 24b of the light-transmitting member 24.

[0051] Next, as shown in FIG. 12, the support substrate 21 and the resin member 18 are removed, and an intermediate member 34 is formed in which a plurality of light-emitting portions 10 are joined to a pair of dielectric films 22, a wavelength conversion member 23, and a light-transmitting member 24. For the removal of the resin member 18, for example, wet etching or the like is used.

[0052] Next, as shown in FIG. 13, a modified portion M2 is formed inside the wavelength conversion member 23. The modified portion M2 is formed by irradiating the wavelength conversion member 23 with laser light L2. The laser light L2 is, for example, pulsed laser light. In this case, the pulse width is, for example, 100 fs or more and 10 ps or less, preferably 100 fs or more and less than 3 ps. The peak wavelength of the laser light L2 is a peak wavelength that can transmit through the substrate 11, for example, 350 nm or more and 1100 nm or less, preferably 700 nm or more and less than 1100 nm. The spot diameter of the laser light L2, that is, the minimum beam diameter is, for example, 1 μm or more and 10 μm or less, preferably 1 μm or more and less than 5 μm. The laser light L2 is irradiated continuously or at regular intervals along the planned fragmentation line 30 shown in FIG. 15 to a second region 42 that overlaps with the first region 41 in a plan view of the wavelength conversion member 23. The laser light L2 is irradiated onto the wavelength conversion member 23 from the first surface 23a side of the wavelength conversion member 23. By condensing the laser light L2 inside the wavelength conversion member 23 while scanning along the planned fragmentation line 30, the modified portion M2 is formed inside the wavelength conversion member 23. As a result, a plurality of modified portions M2 are formed inside the wavelength conversion member 23 along the planned fragmentation line 30. The modified portion M2 is a region where the density, refractive index, mechanical strength, and other physical properties are different from those of the surrounding non-modified region. For example, the modified portion M2 is a portion of the wavelength conversion member 23 that has lower light transmittance than the non-modified region. Also, for example, the modified portion M2 has a lower mechanical strength than the non-modified region in the wavelength conversion member 23. Cracks extending in the direction of the first surface 23a and the direction of the second surface 23b are formed from the modified portion M2.

[0053] Next, as shown in FIG. 14, the intermediate member 34 formed with the modification part M2 is cut along the modification part M1 and the modification part M2, and fragmented into a plurality of light emitting devices 1. The modification part M1 has a lower mechanical strength than the other parts of the light transmitting member 24, and the modification part M2 has a lower mechanical strength than the other parts of the wavelength conversion member 23. Therefore, by pressing the intermediate member 34 along the fragmentation planned line 30, the intermediate member 34 can be easily cut. A blade may be pressed against the fourth surface 24c of the light transmitting member 24 when pressing the intermediate member 34. The plurality of light emitting devices 1 each include a light emitting part 10, a dielectric film 22, a wavelength conversion member 23, and a light transmitting member 24.

[0054] In this way, a plurality of light emitting devices 1 can be manufactured.

[0055] In the light emitting device 1 manufactured in this way, the light emitted from the active part 10a is emitted from the fourth surface 24c of the light transmitting member 24 through the dielectric film 22, the wavelength conversion member 23, and the light transmitting member 24. Since the fourth surface 24c is roughened, the light extraction efficiency can be improved.

[0056] Generally, for the arithmetic mean roughness Ra of the rough surface for diffusing light, it is preferable that the arithmetic mean roughness Ra is large when the light has a long wavelength, and it is preferable that the arithmetic mean roughness Ra is small when the light has a short wavelength. Therefore, it is preferable that the arithmetic mean roughness Ra of the roughened fourth surface 24c is larger than the arithmetic mean roughness Ra of the roughened sixth surface 10c. By doing so, the light emitted from the active part 10a can be efficiently diffused at the sixth surface 10c having an arithmetic mean roughness Ra smaller than the arithmetic mean roughness Ra of the fourth surface 24c and made to enter the wavelength conversion member 23. As a result, the uniformity of the light emitted from the wavelength conversion member 23 can be improved, and the uniformity of the brightness in plan view can be improved. Furthermore, the light emitted from the wavelength conversion member 23 can be efficiently diffused by the fourth surface 24c having an arithmetic mean roughness Ra larger than the arithmetic mean roughness Ra of the sixth surface 10c, and the uniformity of the brightness in plan view can be improved.

[0057] When manufacturing the light-emitting device 1, since the modification portion M1 is formed on the light-transmitting member 24 and the modification portion M2 is formed on the wavelength conversion member 23, it can be more easily cut than the case where the modification portion is formed only on either the light-transmitting member 24 or the wavelength conversion member 23.

[0058] In addition, since the irradiation of the laser beam L1 for forming the modification portion M1 on the light-transmitting member 24 is performed before the formation of the concave portion 24r, scattering of the laser beam L1 by the roughened fourth surface 24c can be avoided. Therefore, the modification portion M1 can be formed at a desired position with high positional accuracy. When the laser beam L1 is irradiated from the side of the third surface 24a, the laser beam L1 is condensed inside the light-transmitting member 24 through the relatively thick wavelength conversion member 23, and the diameter of the laser beam L1 at the stage of entering the first surface 23a of the light-transmitting member 24 becomes large. Therefore, in this case, the laser beam L1 may also irradiate the light-emitting portion 10, and the light-emitting portion 10 may be damaged by the laser beam L1. On the other hand, in the present embodiment, since the laser beam L1 is irradiated from the side of the fourth surface 24b, damage to the light-emitting portion 10 caused by the irradiation of the laser beam L1 can be avoided.

[0059] In addition, by irradiating the laser beam L2 for forming the modification portion M2 on the wavelength conversion member 23 from the side of the first surface 23a, scattering of the laser beam L2 by the fourth surface 24c and the modification portion M1 formed on the light-transmitting member 24 can be avoided. Therefore, the modification portion M2 can be formed at a desired position with high positional accuracy. Since the laser beam L2 is condensed inside the wavelength conversion member 23, the diameter of the laser beam L2 at the stage of entering the first surface 23a of the light-transmitting member 24 does not become large enough for the laser beam L2 to also irradiate the light-emitting portion 10.

[0060] Furthermore, the wavelength conversion member 23 before the formation of the modification portion M2 is less deformable than the light-transmitting member 24 before the formation of the modification portion M1, and the modification portion M2 is not formed in the intermediate member 34 (see FIG. 12) obtained by removing the support substrate 21 and the resin member 18. Therefore, although the modification portion M1 is formed, the intermediate member 34 has a strength that can reduce the cracking of the intermediate member 34 at an unintended timing. If the intermediate member 34 cracks at an unintended timing, the size of the light-emitting device 1 may vary, the conveyance to the subsequent process may become difficult, and the yield may decrease.

[0061] Therefore, according to the present embodiment, the light-emitting device 1 capable of obtaining good light extraction efficiency can be manufactured with a high yield.

[0062] The thickness of the wavelength conversion member 23 is preferably greater than the thickness of the light-transmitting member 24. By the thickness of the wavelength conversion member 23 being greater than the thickness of the light-transmitting member 24, a high strength can be obtained for the laminate of the wavelength conversion member 23 and the light-transmitting member 24, and thus a high strength can be obtained for the light-emitting device 1. In addition, the occurrence of cracking of the intermediate member 34 at the above-described unintended timing can be reduced.

[0063] When forming the modification portion M2, the condensing position of the laser beam L2 is preferably located closer to the first surface 23a side than the center in the thickness direction of the wavelength conversion member 23. By the condensing position being located in this way, the irradiation of the laser beam L2 to the light-emitting portion 10 described above can be made less likely to occur.

[0064] When forming the light-emitting unit 10, the connection part 19 may be formed so that adjacent light-emitting units 10 are connected by the connection part 19, or the connection part 19 may not be formed. Further, when the connection part 19 is formed, the connection part 19 may or may not be removed after the substrate 11 is removed. However, when the connection part 19 is not removed, if the connection part 19 has a sixth surface 10c roughened during the irradiation of the laser beam L2, the laser beam L2 may be scattered by the sixth surface 10c of the connection part 19, making it difficult to condense the light. For this reason, it is preferable that the connection part 19 does not exist during the irradiation of the laser beam L2, or if the connection part 19 exists, the sixth surface 10b of the connection part 19 is not roughened.

[0065] (First Modified Example) Next, a first modified example of the embodiment will be described. In the first modified example, the step of forming the dielectric film 22 includes a step of forming a first film 28 having a refractive index lower than that of the light-emitting unit 10 and higher than that of the wavelength conversion member 23, and a step of forming a second film 29 made of aluminum oxide. FIG. 16 is a cross-sectional view illustrating a method for manufacturing a light-emitting device according to the first modified example. Examples of the first film 28 include a silicon oxide film and a silicon oxynitride film.

[0066] In the first modified example, first, as in the embodiment, the steps up to the step of roughening the sixth surface 10b shown in FIG. 4 are performed (see FIGS. 1 to 4). Next, as shown in FIG. 16, after forming the first film 28, the second film 29 is formed to form the dielectric film 22. The thickness of the second film 29 is, for example, 3 nm or more and 30 nm or less, preferably 5 nm or more and 10 nm or less. Nb, Ti, Ta, etc. may be added to the second film 29. Thereafter, the wavelength conversion member 23 is disposed on the second film 29. The wavelength conversion member 23 is directly bonded to the second film 29. Then, after the arrangement of the light-transmitting member 24, the same steps as in the embodiment are performed (see FIGS. 7 to 14).

[0067] The same effects as those of the embodiment can also be obtained by the first modification example. When the wavelength conversion member 23 is a sintered body of a phosphor containing aluminum oxide, the direct bonding between the second film 29 made of aluminum oxide and the wavelength conversion member 23 is stronger than the direct bonding between the dielectric film 22 and the wavelength conversion member 23. Therefore, according to the first modification example, better strength can be obtained. Note that the refractive index of the second film 29 made of aluminum oxide is lower than that of the first film 28, but the optical loss is suppressed to a negligible level. This is because, as described above, the thickness of the second film 29 is 3 nm or more and 30 nm or less, and the thickness is sufficiently small compared to the wavelength of the light emitted from the active portion 10a.

[0068] (Second Modification Example) Next, a second modification example of the embodiment will be described. In the second modification example, after the wavelength conversion member 23 and the light transmissive member 24 are joined, the wavelength conversion member 23 is directly joined to the dielectric film 22. FIG. 17 is a cross-sectional view illustrating a method of manufacturing a light emitting device according to the second modification example.

[0069] In the second modification example, first, as in the embodiment, the steps up to the formation of the dielectric film 22 are performed (see FIGS. 1 to 6). Separately, as shown in FIG. 17, the wavelength conversion member 23 and the light transmissive member 24 are joined to form an intermediate member 35 having the wavelength conversion member 23 and the light transmissive member 24. In the joining of the wavelength conversion member 23 and the light transmissive member 24, as in the embodiment, after the second surface 23b of the wavelength conversion member 23 and the third surface 24a of the light transmissive member 24 are activated by surface treatment, the wavelength conversion member 23 and the light transmissive member 24 are directly joined. Then, the wavelength conversion member 23 of the intermediate member 35 is joined to the dielectric film 22. In the joining of the dielectric film 22 and the wavelength conversion member 23, as in the embodiment, after the upper surface 22a of the dielectric film 22 and the first surface 23a of the wavelength conversion member 23 are activated by surface treatment, the dielectric film 22 and the wavelength conversion member 23 are directly joined. Then, after the formation of the modified portion M1, the same steps as those in the embodiment are performed (see FIGS. 8 to 14). The intermediate member 35 is an example of the third structure.

[0070] The second modification example can also achieve the same effects as the embodiment. Further, the intermediate member 35 is thicker than each of the wavelength conversion member 23 and the light transmissive member 24, and is less likely to deform. Therefore, the intermediate member 33 can be formed more stably.

[0071] Note that the thickness of the light transmissive member 24 may be adjusted before the light transmissive member 24 is joined to the wavelength conversion member 23. However, in the second modification example, the thickness of the light transmissive member 24 may be adjusted after the intermediate member 35 is formed.

[0072] (Third Modification Example) Next, a third modification example of the embodiment will be described. In the third modification example, when roughening the fourth surface 24b, the concave portions 24r are made dense at the peripheral edge portion of the light emitting portion 10 and sparse at the central portion of the light emitting portion 10. FIGS. 18 to 19 are cross-sectional views illustrating a method of manufacturing a light emitting device according to the third modification example. FIG. 20 is a plan view illustrating a method of manufacturing a light emitting device according to the third modification example.

[0073] In the third modification example, first, as in the embodiment, the steps up to the formation of the modified portion M1 are performed (see FIGS. 1 to 8). Next, as shown in FIGS. 18 and 20, a coating film 25 is formed on the light transmissive member 24, and a first mask 126 is formed on the coating film 25 instead of the first mask 26. A plurality of openings 150 are formed in the first mask 126. However, unlike the embodiment, the interval between the openings 150 in the portion overlapping the first region 41 of the first mask 126 in plan view is smaller than the interval between the openings 150 in the portion surrounded by the first region 41 in plan view. For example, the openings 150 of the first mask 126 are dense at the peripheral edge portion of the light emitting portion 10 and sparse as it approaches the central portion. In other words, in plan view, the openings 150 of the first mask 126 are sparse as they are farther from the modified portion M1. Note that FIG. 20 shows a portion where one light emitting device 1 is obtained.

[0074] Next, the coating film 25 is etched using the first mask 126 to form a plurality of openings in the coating film 25. Thereafter, the first mask 126 is removed. In this way, a second mask is obtained from the coating film 25. Next, by etching the fourth surface 24b of the light-transmitting member 24 using the second mask, as shown in FIG. 19, a plurality of concave portions 24r are formed in the fourth surface 24b of the light-transmitting member 24. In this way, the fourth surface 24b is roughened, and the light-transmitting member 24 comes to have a roughened fourth surface 24c. However, unlike the embodiment, in a plan view, the interval between the concave portions 24r of the first portion 51 that overlaps the first region 41 in the fourth surface 24c is smaller than the interval between the concave portions 24r of the second portion 52 surrounded by the first portion 51 in the fourth surface 24c. And after the removal of the support substrate 21 and the resin member 18, the same steps as in the embodiment are performed (see FIGS. 12 to 14).

[0075] According to the third modification example, the same effects as in the embodiment can be obtained. Further, when the concave portions 24r are formed at equal intervals, it is likely that the central portion of the light-emitting device 1 is bright and the peripheral portion is dark. However, in the light-emitting device 1 manufactured according to the third modification example, since the concave portions 24r at the peripheral portion of the fourth surface 24b are smaller than the interval between the concave portions 24r at the central portion of the fourth surface 24b, light diffusion is likely to occur at the peripheral portion of the fourth surface 24b, so that the uniformity of brightness in a plan view can be improved.

[0076] This specification includes the following embodiments. Item 1. A step of preparing a first structure including a wavelength conversion member having a first surface and a second surface located on the opposite side of the first surface, a plurality of light-emitting portions arranged on the first surface side, a light-transmitting member arranged on the second surface side and having a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; A step of irradiating laser light from the fourth surface side to a first region of the light-transmitting member located between adjacent light-emitting portions in a plan view perpendicular to the fourth surface to form a first modified portion in the first region; A step of roughening the fourth surface of the light-transmitting member after the step of forming the first modified portion; After the step of roughening the fourth surface, a step of irradiating a second region of the wavelength conversion member overlapping the first region in plan view with laser light from the first surface side to form a second modified portion in the second region; A step of cutting the first structure along the first modified portion and the second modified portion; A method for manufacturing a light-emitting device, comprising: Item 2. The step of preparing the first structure includes: Preparing a second structure having a first substrate and a plurality of light-emitting portions arranged on the first substrate, having a fifth surface facing the first substrate, and a sixth surface located on the side opposite to the fifth surface; A step of roughening the sixth surface of the plurality of light-emitting portions; After the step of roughening the sixth surface, a step of forming a dielectric film covering the sixth surface of the plurality of light-emitting portions; A step of bonding the wavelength conversion member to the dielectric film; The method for manufacturing a light-emitting device according to Item 1 above, comprising: Item 3. The step of forming the dielectric film includes a step of forming a first film on the sixth surface, the first film having a refractive index lower than that of the light-emitting portion and higher than that of the wavelength conversion member, in the method for manufacturing a light-emitting device according to Item 2 above. Item 4. The step of forming the dielectric film further includes a step of forming a second film made of aluminum oxide on the first film after the step of forming the first film, In the step of bonding the light-transmitting member to the dielectric film, the second film and the light-transmitting member are directly bonded, in the method for manufacturing a light-emitting device according to Item 3 above. Item 5. The arithmetic mean roughness of the roughened fourth surface is larger than the arithmetic mean roughness of the roughened sixth surface, in the method for manufacturing a light-emitting device according to any one of Items 2 to 4 above. Item 6. The step of preparing the first structure includes a step of bonding the wavelength conversion member and the light-transmitting member to form a third structure having the wavelength conversion member and the light-transmitting member, In the step of bonding the wavelength conversion member to the dielectric film, the dielectric film and the wavelength conversion member of the third structure are bonded together. The method for manufacturing a light-emitting device according to any one of items 2 to 5 above. Item 7. The thickness of the wavelength conversion member is greater than the thickness of the light-transmitting member. The method for manufacturing a light-emitting device according to any one of items 1 to 6 above. Item 8. The roughened fourth surface has a plurality of recesses. In the plan view, the interval between the recesses in the first portion of the fourth surface that overlaps the first region is smaller than the interval between the recesses in the second portion of the fourth surface surrounded by the first portion. The method for manufacturing a light-emitting device according to any one of items 1 to 7 above. Item 9. In the step of forming the second modified portion, the condensing position of the laser light is located closer to the first surface side than the center in the thickness direction of the wavelength conversion member. The method for manufacturing a light-emitting device according to any one of items 1 to 8 above.

Explanation of symbols

[0077] 1: Light-emitting device 10: Light-emitting portion 10a: Active portion 10b, 10c: Sixth surface 10d: Fifth surface 10n: First semiconductor portion 10p: Second semiconductor portion 21: Support substrate 22: Dielectric film 23: Wavelength conversion member 23a: First surface 23b: Second surface 24: Light-transmitting member 24a: Third surface 24b, 24c: Fourth surface 24r: Recess 28: First film 29: Second film 30: Scribing line 31, 32, 33, 34, 35: Intermediate member 41: First region 42: Second region L1, L2: Laser light M1, M2: Modification part

Claims

1. A step of preparing a first structure including a wavelength conversion member having a first surface and a second surface located on the side opposite to the first surface, a plurality of light emitting portions disposed on the first surface side, and a light transmissive member disposed on the second surface side and having a third surface facing the second surface and a fourth surface located on the side opposite to the third surface; A step of irradiating a first region of the light transmissive member located between the adjacent light emitting portions in a plan view perpendicular to the fourth surface with laser light from the fourth surface side to form a first modified portion in the first region; A step of roughening the fourth surface of the light transmissive member after the step of forming the first modified portion; A step of irradiating a second region of the wavelength conversion member overlapping with the first region in the plan view with laser light from the first surface side to form a second modified portion in the second region after the step of roughening the fourth surface; A step of cutting the first structure along the first modified portion and the second modified portion; A method of manufacturing a light emitting device, comprising the above steps.

2. The step of preparing the first structure includes: A step of preparing a second structure including a first substrate and the plurality of light emitting portions arranged on the first substrate and having a fifth surface facing the first substrate and a sixth surface located on the side opposite to the fifth surface; A step of roughening the sixth surface of the plurality of light emitting portions; A step of forming a dielectric film covering the sixth surface of the plurality of light emitting portions after the step of roughening the sixth surface; A step of bonding the wavelength conversion member to the dielectric film; The method of manufacturing a light emitting device according to claim 1, comprising the above steps.

3. The step of forming the dielectric film includes a step of forming a first film on the sixth surface, the refractive index of which is lower than that of the light emitting portion and higher than that of the wavelength conversion member, according to the method of manufacturing a light emitting device according to claim 2.

4. The step of forming the dielectric film further includes a step of forming a second film made of aluminum oxide on the first film after the step of forming the first film, In the step of bonding the light transmissive member to the dielectric film, the second film and the light transmissive member are directly bonded, according to the method of manufacturing a light emitting device according to claim 3.

5. The arithmetic mean roughness of the roughened fourth surface is larger than the arithmetic mean roughness of the roughened sixth surface, according to the method of manufacturing a light emitting device according to claim 2 or 3.

6. The step of preparing the first structure includes a step of bonding the wavelength conversion member and the light transmissive member to form a third structure having the wavelength conversion member and the light transmissive member. In the step of bonding the wavelength conversion member to the dielectric film, the dielectric film and the wavelength conversion member of the third structure are bonded together. The method for manufacturing a light-emitting device according to claim 2 or 3.

7. The thickness of the wavelength conversion member is greater than the thickness of the light-transmitting member. The method for manufacturing a light-emitting device according to any one of claims 1 to 3.

8. The roughened fourth surface has a plurality of recesses. In plan view, the interval between the recesses of the first portion of the fourth surface that overlaps the first region is smaller than the interval between the recesses of the second portion of the fourth surface surrounded by the first portion. The method for manufacturing a light-emitting device according to any one of claims 1 to 3.

9. In the step of forming the second modified portion, the condensing position of the laser beam is located closer to the first surface side than the center in the thickness direction of the wavelength conversion member. The method for manufacturing a light-emitting device according to any one of claims 1 to 3.

Images