Substrate and method for manufacturing the same, and light-emitting device and method for manufacturing the same

Abstract

To provide a substrate which is resistant to warping and has high thermal conductivity, a method for manufacturing the same, and a light emitting device and a method for manufacturing the same.SOLUTION: A substrate includes a first conductive member including a metal member and having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, a second conductive member that includes a metal member, is spaced apart from the first conductive member and has an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, an insulating member that is disposed between the side surface of the first conductive member and the side surface of the second conductive member and has an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The first conductive member and the second conductive member have metal members each having a plurality of voids of 5 μm or less.SELECTED DRAWING: Figure 1B

Description

Technical Field

[0001] The present disclosure relates to a substrate, a method for manufacturing the same, a light-emitting device, and a method for manufacturing the same.

Background Art

[0002] Conventionally, a semiconductor light-emitting device having two lead frames, a resin portion that is filled in a slit-shaped groove between the lead frames and holds the lead frames, and a resin portion disposed on the lead frames is known (see Patent Document 1).

[0003] Also, a surface-mount light-emitting diode having a substantially cubic package made of a metal core material and an insulating member filled in a slit that vertically bisects the package is known (see Patent Document 2).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] An object of the present disclosure is to provide a substrate that is less likely to warp and has a high thermal conductivity, a method for manufacturing the same, a light-emitting device, and a method for manufacturing the same.

Means for Solving the Problems

[0006] A substrate according to an embodiment of the present disclosure includes a first conductive member including a metal member and having an upper surface, a lower surface, and side surfaces connecting the upper and lower surfaces, a second conductive member including a metal member, spaced apart from the first conductive member, and having an upper surface, a lower surface, and side surfaces connecting the upper and lower surfaces, and an insulating member disposed between the side surfaces of the first conductive member and the side surfaces of the second conductive member and having an upper surface, a lower surface, and side surfaces connecting the upper and lower surfaces, wherein the metal members of the first conductive member and the second conductive member have a plurality of voids of 5 μm or less.

[0007] A light-emitting device according to an embodiment of the present disclosure includes the substrate and a light-emitting element disposed on the substrate.

[0008] A method for manufacturing a substrate according to an embodiment of the present disclosure includes preparing an insulating member having an upper surface, a lower surface, and side surfaces connecting the upper and lower surfaces, disposing a first conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less and a second conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less on the side surface or the side of the insulating member, and firing the first conductive paste and the second conductive paste at a temperature equal to or lower than the melting point or the glass transition point of the insulating member to form a first conductive member and a second conductive member.

[0009] A method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes disposing a light-emitting element on the substrate.

Advantages of the Invention

[0010] According to an embodiment of the present disclosure, it is possible to provide a substrate that is less likely to warp and has excellent thermal conductivity, a method for manufacturing the same, a light-emitting device, and a method for manufacturing the same.

Brief Description of the Drawings

[0011]

Figure 1A

Figure 1B

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Figure 5A

Figure 5B

Figure 6A

Figure 6B

Figure 7A

Figure 7B

Figure 7C

Figure 7D

Figure 7E

Figure 7F

Figure 8A

Figure 8B

Figure 9

Figure 10

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Figure 12

Figure 13A

Figure 13B

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Figure 15A

Figure 15B

Figure 15C

Figure 15D

Embodiments for Carrying Out the Invention

[0012] Hereinafter, a substrate according to an embodiment of the present invention (hereinafter sometimes referred to as "the substrate according to the embodiment"), a method for manufacturing the substrate (hereinafter sometimes referred to as "the method for manufacturing the substrate according to the embodiment"), a light-emitting device (hereinafter sometimes referred to as "the light-emitting device according to the embodiment"), and a method for manufacturing the light-emitting device (hereinafter sometimes referred to as "the method for manufacturing the light-emitting device according to the embodiment") will be described. In the following description, terms indicating a specific direction or position (for example, "up", "down", and other terms including these terms) are used as necessary. However, the use of these terms is for facilitating the understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of those terms. Also, parts or members denoted by the same reference numerals shown in a plurality of drawings indicate the same or equivalent parts or members.

[0013] Further, the embodiments shown below exemplify a substrate and a method for manufacturing the substrate, and a light-emitting device and a method for manufacturing the light-emitting device for embodying the technical idea of the present invention, and do not limit the present invention thereto. Also, the dimensions, materials, shapes, relative arrangements, etc. of the parts or members described below are not intended to limit the scope of the present invention only thereto without specific description, but are intended to be illustrative. Also, the content described in one embodiment is applicable to other embodiments and modifications. Also, the dimensions and positional relationships of the parts or members shown in the drawings may be exaggerated for clarity of explanation. Further, in order to avoid excessive complexity of the drawings, a schematic diagram in which the illustration of some parts or members is omitted or an end view showing only the cut surface as a cross-sectional view may be used. Also, "arrange" includes not only the case of direct contact but also the case of indirect arrangement, for example, via other members.

[0014] 〔Substrate〕 The substrate according to the embodiment includes a first conductive member including a metal member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface, a second conductive member including a metal member, spaced apart from the first conductive member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface, and an insulating member disposed between the side surface of the first conductive member and the side surface of the second conductive member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface. The metal members of the first conductive member and the second conductive member have a plurality of voids (also referred to as "porous") of 5 μm or less. The substrate according to the embodiment may further have other members as needed. Note that the plurality of voids indicates that there are a plurality of voids, not just one.

[0015] The thickness of the substrate according to the embodiment is not particularly limited, but is preferably 100 μm or more and 400 μm or less, and more preferably 200 μm or more and 300 μm or less.

[0016] <Substrate according to the first embodiment> FIG. 1A is a schematic top view showing an example of the substrate according to the first embodiment. FIG. 1B is a cross-sectional view taken along line IB-IB of FIG. 1A. FIG. 2 is an example of a cross-section of the metal members of the first conductive member and the second conductive member, and is an observation image observed by SEM under the conditions of 2.00 kV and 15,000 times magnification. The scale bar indicates 3 μm.

[0017] As shown in FIGS. 1A and 1B, the substrate 10 according to the first embodiment includes a first conductive member 1, a second conductive member 2, and an insulating member 3. Hereinafter, each component of the substrate 10 will be described.

[0018] (First conductive member and second conductive member) The first conductive member 1 includes a metal member and has an upper surface 1a, a lower surface 1b, and a side surface 1c connecting the upper surface 1a and the lower surface 1b. The second conductive member 2 includes a metal member and has an upper surface 2a, a lower surface 2b, and a side surface 2c connecting the upper surface 2a and the lower surface 2b, which is separated from the first conductive member 1. In the substrate 10 according to the first embodiment, although the first conductive member 1 and the second conductive member 2 are shown as different members, it is only for convenience of description to explain that the insulating member 3 is disposed between the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2. The first conductive member 1 and the second conductive member 2 have the same configuration. Therefore, in FIGS. 1A and 1B, the arrangements of the first conductive member 1 and the second conductive member 2 may be reversed. Hereinafter, the second conductive member 2 will be described together with the description of the first conductive member 1.

[0019] In a cross-sectional view in the thickness direction of the substrate 10, the areas of the first conductive member 1 and the second conductive member 2 are preferably larger than the area of the insulating member 3. The ratio of the total cross-sectional area of the first conductive member 1 and the second conductive member 2 to the cross-sectional area of the insulating member 3 (total cross-sectional area of the first conductive member 1 and the second conductive member 2 / cross-sectional area of the insulating member 3) is preferably 2 or more, more preferably 2 or more and 30 or less, and still more preferably 4 or more and 20 or less. In a cross-sectional view in the thickness direction of the substrate 10, when the areas of the first conductive member 1 and the second conductive member 2 are larger than the area of the insulating member 3, the thermal conductivity is more excellent.

[0020] - Metal member - The first conductive member 1 and the second conductive member 2 have a metal member and may be made of a metal member. "Made of a metal member" means that the content of the metal member in the first conductive member 1 and the second conductive member 2 is 98% by mass or more, preferably 99% by mass or more, and more preferably 100% by mass.

[0021] The metal members of the first conductive member 1 and the second conductive member 2 have a plurality of voids of 5 μm or less. Specifically, the voids in the metal member have a plurality of voids of 5 μm or less in a cross-sectional view of the first conductive member 1 and the second conductive member 2. Here, the cross-sectional view of the first conductive member 1 and the second conductive member 2 may be a cross-sectional view in the thickness direction of the substrate 10 or a cross-sectional view in a direction perpendicular to the thickness direction of the substrate 10.

[0022] Note that since the metal members of the first conductive member 1 and the second conductive member 2 have a plurality of voids of 5 μm or less, the upper surfaces 1a of the first conductive member 1 and the upper surfaces 2a of the second conductive member 2 may have dents due to the voids. The voids in the metal members of the first conductive member 1 and the second conductive member 2 exist as voids inside, and at least a part of the voids appears as a dent with an opening on the surface. Therefore, the voids inside the metal members of the first conductive member 1 and the second conductive member 2 and the dents on the surface are synonymous. The voids or dents are caused by firing metal particles, polishing, grinding, or the like.

[0023] The dimensions of the voids or dents of the first conductive member 1 and the second conductive member 2 are not particularly limited as long as they are 5 μm or less, but are preferably 0.1 μm or more and 5 μm or less, more preferably 0.1 μm or more and 3 μm or less, and still more preferably 0.1 μm or more and 2 μm or less. Since the voids or dents of the metal member are 5 μm or less, the substrate 10 has excellent thermal conductivity. In the first embodiment, the dimension of the dent of the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 is the maximum diameter of the opening of the dent.

[0024] Also, the number of dents of the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 is not particularly limited, but is preferably 3 or less, and more preferably 2 or less.

[0025] The presence or absence of voids or dents, the dimensions of the voids or dents, the number of voids or dents, etc. in the metal members of the first conductive member 1 and the second conductive member 2 can be confirmed by observing a cross-section in the thickness direction of the substrate 10 with a transmission electron microscope (SEM). An example of a void in the metal member of the first conductive member 1 and the second conductive member 2 is shown in FIG. 2.

[0026] When at least one of the dimensions of the dents on the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 is 0.1 μm or more and 5 μm or less, and the number of dents on the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 is 3 or less, even when plating is applied to the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2, there are no irregularities on the surface and specular reflection can be facilitated.

[0027] The dimensions and number of the dents on the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 can reduce the dimensions of the dents and decrease the number of dents by polishing the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 and by the extension of the metal due to polishing. Therefore, the dimensions and number of the dents on the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 do not necessarily match the dimensions and number of the voids in the metal members of the first conductive member 1 and the second conductive member 2.

[0028] In a conventional light-emitting device, due to the different linear expansion coefficients of the lead frame and the resin part, the substrate may warp, the lead frame and the resin part may peel off, and the thermal conductivity may decrease. On the other hand, in the substrate 10 according to the first embodiment, since the metal member has voids of 5 μm or less, the thermal expansion of the metal member can be reduced, and warping of the substrate 10 is less likely to occur.

[0029] The ratio of voids in the metal members of the first conductive member 1 and the second conductive member 2 is calculated using a focused ion beam scanning electron microscope (FIB-SEM) "Heloes450s" manufactured by FEI Company. One side of a double-sided tape made of carbon is attached to the sample stage of the microscope, and then the substrate is placed on the other side of the double-sided tape. After applying a coating of carbon and Pt from above, cross-section machining is performed with FIB, the magnification is set from 10,000 times to 15,000 times, and a SEM cross-sectional image of the conductive member is obtained. Binary conversion is performed between the conductor part and the void part using image analysis software from the obtained SEM cross-sectional image, and the ratio of the void part is calculated. At this time, the ratio of the void part in the cross-sectional view is preferably 5% or more and 25% or less, and more preferably 5% or more and 15% or less.

[0030] The metal members of the first conductive member 1 and the second conductive member 2 preferably have particles with a median diameter of 0.1 μm or more and 10 μm or less connected together. Here, in the substrate 10 according to the first embodiment, "the particles are connected together" means that in the manufacture of the substrate 10, when forming the first conductive member 1 and the second conductive member 2, by firing the metal particles, a part or all of the surface of the metal particles is softened and joined so as to be connected to adjacent metal particles. When firing the metal particles, the metal particles do not flow significantly and are connected in a state with voids. In other words, "the particles are connected together" excludes the case where two or more adjacent particles are simply in contact, and the case where two or more particles are completely melted not only on the surface but also in the core part and joined without gaps. Therefore, the state in which the particles of the metal members of the first conductive member 1 and the second conductive member 2 are connected together, and the dimensions of the voids or recesses in the metal members can be appropriately adjusted according to the material and firing temperature of the metal members.

[0031] There are no particular restrictions on the type of metal of the metal members included in the first conductive member 1 and the second conductive member 2. For example, silver, copper, silver-copper alloy, copper-zinc alloy, copper-tin alloy, etc. may be mentioned. These may be used alone or in combination of two or more. Among these, from the viewpoint of thermal conductivity, it is preferable that the type of metal of the metal members included in the first conductive member 1 and the second conductive member 2 is copper.

[0032] (Insulating member) The insulating member 3 is disposed between the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2, and has an upper surface 3a, a lower surface 3b, and side surfaces 3c connecting the upper surface 3a and the lower surface 3b.

[0033] There are no particular restrictions on the material of the insulating member 3. For example, ceramics, glass, etc. may be mentioned. These may be used alone or in combination of two or more. Among these, as the material of the insulating member 3, ceramics are preferable from the viewpoint of excellent thermal conductivity.

[0034] There are no particular restrictions on the ceramics. For example, nitride-based ceramics such as silicon nitride, aluminum nitride, and boron nitride; oxide-based ceramics such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide; silicon carbide; mullite; borosilicate glass, etc. may be mentioned. These may be used alone or in combination of two or more. Among these, as the ceramics, nitride-based ceramics with high reflectivity and high thermal conductivity are preferable.

[0035] The side surface 3c of the insulating member 3 is disposed between the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2, and it is preferable that the side surface 3c is joined to each of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2.

[0036] Here, the statement that the side surface 3c of the insulating member 3 is "joined" to each of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2 means that in the manufacture of the substrate 10, when forming the first conductive member 1 and the second conductive member 2 so as to join with the side surface 3c of the insulating member 3, a part of the surface of the particles in the metal member of the first conductive member 1 and the second conductive member 2 is joined so as to be connected to a part of the side surface 3c of the insulating member 3 in a softened state, and then after firing, a part of the side surface 3c of the insulating member 3 and a part of the surface of the particles are joined, and the other part of the surface of the particles is not joined. In other words, "joined" means that the side surface 3c of the insulating member 3 is directly joined to each of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2. Thereby, since the thermal conductivity is high and the adhesion is also high, the joining reliability is excellent.

[0037] Therefore, it is preferable to exclude the case where the side surface 3c of the insulating member 3 is bonded to each of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2 using an adhesive. When the side surface 3c of the insulating member 3 and each of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2 are bonded using an adhesive, the thermal conductivity may decrease, the adhesive may deteriorate due to heat or light, or peeling or chipping may occur due to the difference in the linear expansion coefficient between the side surface 3c of the insulating member 3 and the side surfaces 1c of the first conductive member 1 and 2c of the second conductive member 2.

[0038] In a cross-sectional view in the thickness direction of the substrate 10 passing through the first conductive member 1, the insulating member 3, and the second conductive member 2, it is preferable that the insulating member 3 has a wider width of the lower surface 3b than the upper surface 3a. As such a cross-sectional view shape of the insulating member 3 in the thickness direction of the substrate 10, for example, not only the convex shape shown in FIG. 1B, but also, for example, a polygonal shape in which the lower surface 3b is wider than the upper surface 3a, a substantially hemispherical shape in which the upper surface 3a is flat, and the like can be adopted.

[0039] When the insulating member 3 has a convex shape in a cross-sectional view in the thickness direction of the substrate 10 passing through the first conductive member 1, the insulating member 3, and the second conductive member 2, the side surface 3c of the insulating member 3 has a side surface 3c1 on the upper surface 3a side of the insulating member 3 and a side surface 3c2 on the lower surface 3b side of the insulating member 3. The angle formed by the corner connecting the side surface 3c1 and the side surface 3c2 is not particularly limited, but the insulating member 3 preferably has an angle in which the lower surface 3b has a wider width than the upper surface 3a.

[0040] Here, the width of the upper surface 3a of the insulating member 3 means the length of the upper surface 3a of the insulating member 3 sandwiched between the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2. Also, the width of the lower surface 3b of the insulating member 3 means the length of the lower surface 3b of the insulating member 3 sandwiched between the lower surface 1b of the first conductive member 1 and the lower surface 2b of the second conductive member 2.

[0041] By making the width of the upper surface 3a of the insulating member 3 shorter than the width of the lower surface 3b of the insulating member 3 and narrowing the distance between the first conductive member 1 and the second conductive member 2, heat from the light-emitting element 20 can be efficiently transmitted to the first conductive member 1 and the second conductive member 2. Also, since heat tends to accumulate near the center of the light-emitting element 20, it is preferable to release the heat near the center. When the space between the electrodes arranged in the light-emitting element 20 becomes wide, heat tends to accumulate, so the space between the electrodes may be narrowed, but by making the width of the upper surface 3a of the insulating member 3 shorter than the width of the lower surface 3b of the insulating member 3, it is possible to cope with such a narrow space between the electrodes.

[0042] Also, by making the lower surface 3b of the insulating member 3 have a wider width than the upper surface 3a, the distance between the first conductive member 1 and the second conductive member 2 can be widened. Thereby, when the substrate 10 is electrically joined to the mounting substrate using solder, it is possible to make it difficult for a short circuit to occur between the first conductive member 1 and the second conductive member 2.

[0043] The length of the side surface 3c of the insulating member 3 is not particularly limited, and the length of one side surface 3c of the insulating member 3 and the length of the other side surface 3c of the insulating member 3 may be the same or different, but it is preferably the same. That the length of one side surface 3c of the insulating member 3 and the length of the other side surface 3c of the insulating member 3 are the same means that the lengths of the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2 in contact with the side surface 3c of the insulating member 3 are the same. In other words, it is preferable that the upper surface 3a of the insulating member 3, the upper surface 1a of the first conductive member 1, and the upper surface 2a of the second conductive member 2 are flush. Thereby, the light-emitting element 20 can be preferably arranged on the upper surface 3a of the insulating member 3, the upper surface 1a of the first conductive member 1, and the upper surface 2a of the second conductive member 2.

[0044] The substrate 10 according to the above first embodiment can be preferably manufactured by the manufacturing method of the substrate according to the first embodiment described later or the manufacturing method of the substrate according to the third embodiment.

[0045] <Substrate according to the second embodiment> FIG. 3 is a schematic cross-sectional view showing an example of a substrate according to the second embodiment.

[0046] As shown in FIG. 3, the substrate 10 according to the second embodiment includes a first conductive member 1, a second conductive member 2, an insulating member 3, and a metal thin film 4.

[0047] The substrate 10 according to the second embodiment is the same as the substrate 10 according to the first embodiment except for having a metal thin film 4. Hereinafter, the metal thin film 4 of the substrate 10 will be described.

[0048] (Metal thin film) The metal thin film 4 is disposed between the insulating member 3 and the first conductive member 1 and between the insulating member 3 and the second conductive member 2.

[0049] The metal thin film 4 may be further disposed on at least one of the upper surface 3a and the lower surface 3b of the insulating member 3.

[0050] The thickness of the metal thin film 4 is not particularly limited, but is preferably 0.01 μm or more and 3 μm or less, and more preferably 0.1 μm or more and 1 μm or less.

[0051] The type of metal of the metal thin film 4 is not particularly limited, and examples thereof include silver, copper, silver - copper alloy, copper - zinc alloy, copper - tin alloy, etc. These may be used alone or in combination of two or more. Among these, it is preferable in terms of improving adhesion that the type of metal of the metal thin film 4 is the same as the type of metal of the metal members of the first conductive member 1 and the second conductive member 2.

[0052] The substrate 10 according to the above - described second embodiment can be preferably manufactured by the manufacturing method of the substrate according to the second embodiment described later.

[0053] <Substrate according to the third embodiment> FIG. 4 is a schematic cross - sectional view showing an example of a substrate according to the third embodiment.

[0054] As shown in FIG. 4, the substrate 10 according to the third embodiment includes a first conductive member 1, a second conductive member 2, and an insulating member 3.

[0055] The substrate 10 according to the third embodiment is the same as the substrate 10 according to the first embodiment except that the shape of the insulating member 3 is different. Hereinafter, the shape of the insulating member 3 of the substrate 10 will be described.

[0056] (Insulating member) In the cross-sectional view of the substrate 10 in the thickness direction passing through the first conductive member 1, the insulating member 3, and the second conductive member 2, the insulating member 3 is convex. However, the insulating member 3 according to the first embodiment is different in that the corner portion 3d connecting the side surface 3c1 on the upper surface 3a side of the insulating member 3 and the side surface 3c2 on the lower surface 3b side of the insulating member 3 has a rounded shape (hereinafter sometimes referred to as an "R shape"). When the corner portion 3d of the convex portion of the insulating member 3 has an R shape, in the manufacture of the substrate 10, the materials of the first conductive member 1 and the second conductive member 2 are likely to adhere, the adhesion between the first conductive member 1 and the second conductive member 2 and the insulating member 3 is improved, and the conductivity is further improved.

[0057] In the cross-sectional view of the substrate 10 in the thickness direction, the roundness of the corner portion 3d is not particularly limited, but it is preferably a shape corresponding to an arc with a radius R of 2 μm or more and 110 μm or less. In the cross-sectional view of the substrate 10 in the thickness direction, the radius R1 of one roundness of the corner portion 3d and the radius R2 of the other roundness of the corner portion 3d may be the same or different.

[0058] Making the corner portion 3d of the convex portion of the insulating member 3 have an R shape can be achieved by blasting the insulating member 3 in the manufacture of the substrate 10. Therefore, the substrate 10 according to the third embodiment not only has the corner portion 3d of the convex portion of the insulating member 3 having an R shape, but also the surface roughness of at least the side surface 3c of the insulating member 3 is rougher than the side surface 3c of the insulating member 3 in the substrate 10 according to the first embodiment. Also, the surface roughness of the upper surface 3a and the lower surface 3b of the insulating member 3 may be rougher than the upper surface 3a and the lower surface 3b of the insulating member 3 in the substrate 10 according to the first embodiment. Due to the rough surface roughness of the side surface 3c of the insulating member 3, in the manufacture of the substrate 10, the materials of the first conductive member 1 and the second conductive member 2 are likely to adhere, the adhesion between the first conductive member 1 and the second conductive member 2 and the insulating member 3 is improved, and the conductivity is further improved.

[0059] The surface roughness of the side surface 3c, the upper surface 3a, and the lower surface 3b of the insulating member 3 is not particularly limited, but the arithmetic mean roughness Ra can be 50 nm or more and 2 μm or less, and preferably 300 nm or more and 800 nm or less. The arithmetic mean roughness Ra may be measured in accordance with JIS B 0601:2013 using a stylus-type surface roughness meter equipped with a diamond stylus having a tip curvature radius r of 2 μm (for example, Surfcorder SE3500 manufactured by Kosaka Laboratory Ltd.).

[0060] The substrate 10 according to the above-described third embodiment can be preferably manufactured by the manufacturing method of the substrate according to the first embodiment or the manufacturing method of the substrate according to the third embodiment, which will be described later.

[0061] <Substrate according to the fourth embodiment> FIG. 5A is a schematic cross-sectional view showing an example of a substrate according to the fourth embodiment.

[0062] As shown in FIG. 5A, the substrate 10 according to the fourth embodiment includes a first conductive member 1, a second conductive member 2, an insulating member 3, and a plating layer 60.

[0063] The substrate 10 according to the fourth embodiment is the same as the substrate 10 according to the first embodiment except that it has a plating layer 60. Hereinafter, the plating layer 60 of the substrate 10 will be described.

[0064] (Plating layer) The plating layer 60 is a metal layer that covers the upper surface 1a and the lower surface 1b of the first conductive member 1 exposed from the substrate 10, and the upper surface 2a and the lower surface 2b of the second conductive member 2, and the plating layer 60 is not disposed on the side surface 1c of the first conductive member 1 and the side surface 2c of the second conductive member 2. The plating layer 60 reduces the oxidation of the first conductive member 1 and the second conductive member 2 and increases the reflectivity. The regions where the first conductive member 1 and the second conductive member 2 are disposed protrude from the upper surface 3a and the lower surface 3b of the insulating member 3 by the thickness of the plating layer 60.

[0065] By way of the plating layer 60, the connection between the external circuit components, wirings, etc. and the first conductive member 1 and the second conductive member 2 can be made good.

[0066] The plating layer 60 may be, for example, a three-layer plating of nickel, palladium, and gold, or a two-layer plating of nickel and gold, from the sides of the exposed upper surface 1a and lower surface 1b of the first conductive member 1, and the exposed upper surface 2a and lower surface 2b of the second conductive member 2.

[0067] The substrate 10 according to the above fourth embodiment can be preferably manufactured by the manufacturing method of the substrate according to the second embodiment described later.

[0068] <Substrate according to the fifth embodiment> FIG. 5B is a schematic cross-sectional view showing an example of a substrate according to the fifth embodiment. The substrate 10 according to the fifth embodiment is the same as the substrate according to the fourth embodiment, except that the plating layer 60 is also provided on the outer side surfaces in addition to the upper and lower surfaces of the first conductive member 1 and the second conductive member 2. By providing the plating layer 60 not only on the upper and lower surfaces but also on the outer side surfaces of the first conductive member 1 and the second conductive member 2, it is possible to further reduce the oxidation of the first conductive member 1 and the second conductive member 2 and increase the reflectance.

[0069] 〔Manufacturing method of substrate〕 The manufacturing method of the substrate according to the embodiment includes preparing an insulating member having upper and lower surfaces and side surfaces connecting the upper and lower surfaces, disposing a first conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less and a second conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less on the side surface or the side of the insulating member, and firing the first conductive paste and the second conductive paste at a temperature equal to or lower than the melting point or glass transition point of the insulating member to form a first conductive member and a second conductive member, and further includes other steps as necessary.

[0070] <Manufacturing method of substrate according to the first embodiment> FIG. 6A is a flowchart showing an example of a method for manufacturing the substrate 10 according to the first embodiment. FIG. 6B is a flowchart showing an example of preparing an insulating member in the method for manufacturing the substrate 10 according to the first embodiment.

[0071] As shown in FIG. 6A, the method for manufacturing a substrate according to the first embodiment includes preparing an insulating member (S101), disposing a first conductive paste and a second conductive paste (S102), and forming a first conductive member and a second conductive member (S103).

[0072] Also, as shown in FIG. 6B, preparing the insulating member (S101) preferably includes preparing a flat substrate (S11), processing a recess (S12), cutting (S13), and repositioning (S14).

[0073] An example of the method for manufacturing a substrate according to the first embodiment will be described below.

[0074] FIG. 7A is a cross-sectional view showing the preparation of a flat substrate (S11) in preparing the insulating member (S101). FIG. 7B is a cross-sectional view showing the processing of a recess (S12) in preparing the insulating member (S101). FIG. 7C is a cross-sectional view showing the cutting (S13) in preparing the insulating member (S101). FIG. 7D is a cross-sectional view showing the repositioning (S14) in preparing the insulating member (S101). FIG. 7E is a cross-sectional view showing the disposition of the first conductive paste and the second conductive paste (S102). FIG. 7F is a cross-sectional view showing the formation of the first conductive member and the second conductive member (S103).

[0075] (S101: Preparing an insulating member) In preparing the insulating member (S101), an insulating member 3 having an upper surface 3a, a lower surface 3b, and a side surface 3c connecting the upper surface 3a and the lower surface 3b is prepared. When there is a commercially available product of the insulating member 3 with a desired shape and dimensions in preparing the insulating member (S101), a commercially available product may be prepared. However, as shown in FIG. 6B, it preferably includes preparing a flat substrate (S11), processing a recess (S12), cutting (S13), and repositioning (S14).

[0076] ((S11: Preparing a flat substrate)) In preparing the flat substrate 3' (S11), as shown in FIG. 7A, a flat substrate 3' that is the material of the insulating member 3 is prepared. The material of the insulating member 3 is as described in the above item (insulating member).

[0077] When the insulating member 3 is made of ceramics, in preparing the flat substrate (S11), the flat substrate 3' may be a ceramic precursor before firing or a fired ceramic, but it is preferable that it is a fired ceramic in that there is no dimensional variation due to firing.

[0078] The thickness of the flat substrate 3' is not particularly limited, but is preferably 100 μm or more and 500 μm or less, and more preferably 200 μm or more and 350 μm or less.

[0079] ((S12: Processing a recess)) In processing the recess (S12), as shown in FIG. 7B, a recess 8 is processed in the flat substrate 3' to obtain an intermediate body 3'A. The intermediate body 3'A is an aggregate of a plurality of insulating members 3, and it is preferable that it is linear in a direction perpendicular to the thickness direction of the intermediate body 3'A in that a plurality of insulating members 3 can be manufactured at once by cutting in cutting (S13), which is efficient.

[0080] The processing method is not particularly limited and can be appropriately selected according to the shape of the target insulating member 3. Examples include drilling, laser processing, blasting, and etching.

[0081] In the step of processing the recess (S12), it is preferable that the opening of the recess 8 is processed to have a width wider than that of the bottom of the recess 8. Thereby, in the step of cutting (S13), after cutting in the VIC-VIC direction, the insulating member 3 can have a wider width of the lower surface 3b than the upper surface 3a.

[0082] Also, in the step of processing the recess (S12), it is preferable that the inner corner of the recess 8 is processed into a rounded shape (R shape). Thereby, in the step of cutting (S13), after cutting along the cutting line VIIC-VIIC, the corner 3d connecting the side surface 3c1 on the upper surface 3a side and the side surface 3c2 on the lower surface 3b side of the insulating member 3 as shown in FIG. 4 can be made into a rounded shape (R shape). By processing the recess 8 by blasting, the inner corner of the recess 8 can be preferably processed into an R shape. By processing the inner corner of the recess 8 into an R shape, in the step of arranging the first conductive paste and the second conductive paste (S102), the materials of the first conductive member 1 and the second conductive member 2 are likely to adhere, the adhesion between the first conductive member 1 and the second conductive member 2 and the insulating member 3 is improved, and the conductivity is further improved.

[0083] Also, by processing the recess 8 by blasting, the surface roughness of at least the side surface 3c of the insulating member 3, preferably further the surface roughness of the upper surface 3a and the lower surface 3b, becomes rougher. Therefore, in the step of arranging the first conductive paste and the second conductive paste (S102), the materials of the first conductive member 1 and the second conductive member 2 are likely to adhere, the adhesion between the first conductive member 1 and the second conductive member 2 and the insulating member 3 is improved, and the conductivity is further improved.

[0084] In a cross-sectional view in the thickness direction of the intermediate body 3'A, the cross-sectional view shape of the recess 8 may be square or may have a taper. The width of the recess 8 can be appropriately selected according to the accuracy of the processing method of the recess 8, and for example, it can be 50 μm or more and 300 μm or less. The depth of the recess 8 can be, for example, 10 μm or more and 300 μm or less, and preferably 20 μm or more and 150 μm or less.

[0085] ((S13: Cutting)) (S13: Cutting) is to cut the intermediate body 3'A obtained by processing the recess 8 (S21) along the cutting line VIIC-VIIC to obtain the fragmented insulating member 3, as shown in FIGS. 7B and 7C.

[0086] The method of cutting is not particularly limited, and examples thereof include methods using a disk-shaped rotary blade, an ultrasonic cutter, laser light irradiation, a blade, etc.

[0087] ((S14: Rearranging)) (S14: Rearranging) is to rearrange the insulating member 3 fragmented by cutting (S13) on the base material 40. Thereby, a plurality of substrates 10 can be efficiently manufactured.

[0088] The arrangement of one fragmented insulating member 3 and another fragmented insulating member 3 on the base material 40 is not particularly limited, but arranging them linearly is preferable in terms of easily cutting and fragmenting the substrate 10. Also, the interval between arranging one fragmented insulating member 3 and another fragmented insulating member 3 on the base material 40 is not particularly limited and can be appropriately selected according to the dimensions of the target base material.

[0089] The base material 40 is not particularly limited, but a base material having adhesiveness is preferable in terms of easily arranging the substrate 10. The base material 40 having adhesiveness is not particularly limited and can be appropriately selected from known base materials used for electronic components. Examples thereof include resin base materials such as polyimide, polyester, and polyethylene terephthalate.

[0090] The shape, structure, and dimensions of the base material 40 are not particularly limited, but a film shape or a tape shape is preferable.

[0091] (S102: Arranging the first conductive paste and the second conductive paste) In the step of disposing the first conductive paste and the second conductive paste (S102), as shown in FIG. 7E, the first conductive paste containing metal particles with a median diameter of 0.1 μm or more and 10 μm or less and the second conductive paste containing metal particles with a median diameter of 0.1 μm or more and 10 μm or less are disposed on the side surface 3c or the side of the insulating member 3. Thereby, the substrate intermediate 10' is obtained.

[0092] The side of the insulating member 3 means that another member is interposed between the side surface 3c of the insulating member 3 and the first conductive paste or the second conductive paste.

[0093] In the step of disposing the first conductive paste and the second conductive paste (S102), in addition to the side surface 3c or the side of the insulating member 3, it is preferable to dispose the first conductive paste and the second conductive paste so as to be in contact with the upper surface 3a of the insulating member 3. Thereby, in the step of forming the first conductive member and the second conductive member (S103), more preferably, voids can be formed in the metal members of the first conductive member 1 and the second conductive member 2.

[0094] The first conductive member 1 is formed by the first conductive paste. Also, the second conductive member 2 is formed by the second conductive paste. However, as described in the above item of [Base material], the first conductive member 1 and the second conductive member 2 have the same configuration. Therefore, as shown in FIG. 7E, as the first conductive paste and the second conductive paste, a single conductive paste 50 can be disposed on the side surface 3c or the side of the insulating member 3. In the following description, the first conductive paste and the second conductive paste are collectively described as the "conductive paste" or the "conductive paste 50".

[0095] On the other hand, the composition of the conductive paste 50 and the content of each component can be appropriately adjusted as described later. Therefore, in the method for manufacturing the base material according to the first embodiment, it does not prevent the composition and the content of each component of the first conductive paste and the second conductive paste from being different.

[0096] In the step of disposing the first conductive paste and the second conductive paste (S102), after disposing the conductive paste 50 on the side surface 3c or the side of the insulating member 3, preferably, further on the upper surface 3a of the insulating member 3, it may include drying the conductive paste 50. By drying the conductive paste 50 disposed on the side surface 3c or the side of the insulating member 3, preferably, further on the upper surface 3a of the insulating member 3, the conductive paste 50 can be made to have a desired hardness, and in the step of forming the first conductive member and the second conductive member (S103), pressurization can be facilitated.

[0097] There is no particular limitation on the drying temperature of the conductive paste 50, and it may be carried out at room temperature, or it may be carried out by heating to a temperature lower than the firing temperature of the metal particles in the conductive paste 50. When heating, the drying temperature is preferably 60°C or higher and 100°C or lower. Also, there is no particular limitation on the drying time, but it is preferably 3 minutes or longer and 15 minutes or shorter.

[0098] -Conductive paste 50- The conductive paste 50 contains metal particles having a median diameter of 0.1 μm or more and 10 μm or less, and further contains other components as necessary.

[0099] --Metal particles-- The median diameter of the metal particles is 0.1 μm or more and 10 μm or less, and preferably 0.1 μm or more and 5 μm or less. Here, the median diameter is the 50% particle size (D50) in the volume-based particle size distribution. Specifically, it refers to the particle size (volume median diameter) at which the volume cumulative frequency from the small-diameter side in the volume-based particle size distribution measured by the laser diffraction scattering method reaches 50%. The laser diffraction scattering method can be measured, for example, using a laser diffraction particle size distribution measuring device (product name: MASTERSIZER 3000, manufactured by MALVERN).

[0100] The metal particles are not particularly limited, but metal particles that sinter at a sintering temperature of 300°C or lower are preferred, metal particles that sinter at 250°C or lower are more preferred, metal particles that sinter at 200°C or lower are still more preferred, and metal particles that sinter at 120°C or lower are particularly preferred. The lower limit of the sintering temperature of the metal particles is not particularly limited as long as they can be sintered, and the lower the better. Examples of the lower limit of the sintering temperature of the metal particles include metal particles that sinter at 90°C or higher. When the metal particles sinter at a sintering temperature of 300°C or lower, warping of the substrate 10 is less likely to occur.

[0101] The type of metal of the metal particles is not particularly limited, and examples include silver, copper, silver-copper alloy, copper-zinc alloy, copper-tin alloy, and the like. These may be used alone or in combination of two or more. Among these, in terms of thermal conductivity, it is preferable that the type of metal particles is copper.

[0102] The shape of the metal particles is not particularly limited, and they may be spherical, flat, or other shapes. Note that "flat" means a flat shape, for example, a shape in which the thickness is smaller than the maximum length in the plane direction.

[0103] Many metal particles have melting points higher than 300°C. For example, the melting point of copper is 1,082°C. Therefore, even if the metal particles are sintered at 300°C or lower, the metal particles do not melt. Here, since the conductive paste contains metal particles with a median diameter of 0.1 μm or more and 10 μm or less, even if the sintering temperature is 300°C or lower, a part of the surface of the metal particles is in a melted state. On the other hand, the metal particles themselves do not become a powdery liquid. Therefore, when the conductive paste containing metal particles with a median diameter of 0.1 μm or more and 10 μm or less is fired at 300°C or lower, it joins so as to connect with adjacent metal particles in a state where a part of the surface of the metal particles is melted. As a result, the plurality of metal particles themselves do not become a powdery liquid and maintain a spherical or ellipsoidal shape of a predetermined size, so that a part of the surfaces of the plurality of metal particles melts and joins to form a three-dimensional structure mesh. Therefore, after firing at 300°C or lower, gaps remain between the plurality of metal particles, and the first conductive member 1 and the second conductive member 2 including the obtained metal member have voids. Note that the plurality of metal particles indicates that there are a plurality of metal particles rather than a single particle.

[0104] The metal particles may be spherical, may be oblong or flat, or may have other shapes.

[0105] Commercially available products may be used for the metal particles, or they may be synthesized by a publicly known method as appropriate. Examples of commercially available metal particles include CH-0200L1 (spherical) and CH-0200DP (flat) manufactured by Mitsui Mining & Smelting Co., Ltd., 1200Y (spherical) and 1200YP (flat) manufactured by Mitsui Mining & Smelting Co., Ltd., and the like.

[0106] --Other components-- There are no particular restrictions on the other components contained in the conductive paste 50. For example, solvents, resins, and the like can be mentioned, and it is preferable to contain at least one of a resin and a solvent.

[0107] There are no particular restrictions on the content of at least one of the resin and the solvent, but it is preferably 0.2% by mass or more and 50% by mass or less, and more preferably 0.2% by mass or more and 30% by mass or less with respect to the total mass of the conductive paste.

[0108] Commercially available resins may be used, or they may be synthesized by known methods as appropriate. Examples of commercially available resins include Esrec (registered trademark) SV-26 manufactured by Sekisui Chemical Co., Ltd.

[0109] The content of the resin is not particularly limited, but is preferably 0.2% by mass or more and 30% by mass or less based on the total mass of the conductive paste 50. When the content of the resin is 0.2% by mass or more, the viscosity of the conductive paste 50 increases, making it easier to dispose of the conductive paste, and the adhesion between the first conductive member 1 or the second conductive member 2 and the insulating member 3 is further improved. Also, when the content of the resin is 30% by mass or less, the conductive paste 50 is more likely to sinter.

[0110] The solvent is not particularly limited, but preferably has a boiling point of 300°C or lower, more preferably 250°C or lower, and even more preferably 200°C or lower. When the boiling point of the solvent is 300°C or lower, it becomes easier to volatilize the solvent when heating and pressurizing the conductive paste 50. There is no particular limitation on the lower limit of the boiling point of the solvent, and for example, 80°C or higher can be mentioned.

[0111] Commercially available solvents may be used, or they may be synthesized by known methods as appropriate. Examples of commercially available solvents include butyl carbitol.

[0112] The content of the solvent is not particularly limited, but is preferably 2% by mass or more and 50% by mass or less based on the total mass of the conductive paste 50. When the content of the solvent is 2% by mass or more, it becomes easier to dissolve the resin. Also, when the content of the resin is less than or equal to the mass percentage at which it becomes easier to dissolve the resin, the viscosity of the conductive paste 50 increases, making it easier to form the first conductive member 1 or the second conductive member 2.

[0113] (S103: Forming the first conductive member and the second conductive member) In forming the first conductive member and the second conductive member (S103), as shown in FIG. 7F, the first conductive paste and the second conductive paste (conductive paste 50) are fired at a temperature equal to or lower than the melting point or glass transition point of the insulating member 3 to form the first conductive member 1 and the second conductive member 2. By firing the conductive paste 50 at a temperature equal to or lower than the melting point or glass transition point of the insulating member 3, the conductive paste 50 becomes a sintered body.

[0114] In forming the first conductive member and the second conductive member (S103), it is preferable to perform the firing of the first conductive paste and the second conductive paste (conductive paste 50) together with pressure application. Thereby, the space between the plurality of metal particles in the conductive paste 50 is narrowed, the dimension of the voids can be reduced, and the number of voids can be decreased.

[0115] The heating temperature when firing the conductive paste 50 is not particularly limited as long as it is equal to or lower than the melting point or glass transition point of the insulating member 3, and can be appropriately selected according to the material of the insulating member 3. However, it is preferably 150°C or higher and 300°C or lower, more preferably 200°C or higher and 290°C or lower, and even more preferably 220°C or higher and 280°C or lower. When the heating temperature is 150°C or higher, sintering is easy. Also, when the heating temperature is 300°C or lower, a part of the surface of the metal particles softens and joins to connect with adjacent metal particles, and voids can be suitably formed in the first conductive member 1 and the second conductive member 2. Further, when the heating temperature is 300°C or lower, the energy during heating can be reduced, which is economical.

[0116] When applying pressure during firing of the conductive paste 50, the pressure is not particularly limited, but is preferably 0.5 MPa or more and 20 MPa or less, more preferably 1 MPa or more and 15 MPa or less, and still more preferably 2 MPa or more and 10 MPa or less. When the pressure during firing of the conductive paste 50 is 0.5 MPa or more, a part of the surface of the metal particles is softened and adjacent metal particles are likely to join, and voids are likely to be formed in the metal members in the first conductive member 1 and the second conductive member 2. Further, when the pressure during firing of the conductive paste 50 is 20 MPa or less, the energy during pressurization can be reduced, which is economical.

[0117] In addition, when applying pressure during firing of the conductive paste 50, in arranging the first conductive paste and the second conductive paste (S102), it is preferable to arrange the first conductive paste and the second conductive paste so as to be in contact with the upper surface 3a of the insulating member 3.

[0118] The heating and pressurization time during firing of the conductive paste 50 is not particularly limited, but is preferably 5 minutes or more and 1 hour or less, more preferably 10 minutes or more and 50 minutes or less, and still more preferably 15 minutes or more and 40 minutes or less. When the heating and pressurization time during firing of the conductive paste 50 is 10 minutes or more, a part of the surface of the metal particles is softened and joined so as to be connected to adjacent metal particles, and voids can be preferably formed in the first conductive member 1 and the second conductive member 2. Further, when the pressurization time is 1 hour or less, the energy during heating and pressurization can be reduced, which is economical. The heating and pressurization during firing of the conductive paste 50 may be in an oxidizing atmosphere or a non-oxidizing atmosphere. However, from the viewpoint of further improving the conductivity and heat conductivity of the conductive member, it is advantageous to use a non-oxidizing atmosphere. As the non-oxidizing atmosphere, for example, an inert atmosphere such as nitrogen, a reducing atmosphere such as formic acid or hydrogen, or a vacuum atmosphere can be used.

[0119] Other conditions for heating and pressurization during firing of the conductive paste 50 are not particularly limited and can be appropriately adjusted according to the thickness of the target substrate 10 and the like.

[0120] Also, in forming the first conductive member and the second conductive member (S103), before heating and pressurizing, it is preferable to cover the conductive paste 50 arranged in arranging the first conductive paste and the second conductive paste (S102) with a release member. And in forming the first conductive member and the second conductive member (S103), it is preferable to heat and pressurize the conductive paste 50 via the release member. By doing so, it is difficult for the conductive paste 50 to adhere to the release member, and after heating and pressurizing, the release member can be easily peeled off from the first conductive member 1 and the second conductive member 2. Thereby, the surface state of the first conductive member 1 and the second conductive member 2 can be improved. Examples of the release member include a polyimide sheet, a hard SUS plate, and a metal plate subjected to a release treatment such as caniflon plating.

[0121] In forming the first conductive member and the second conductive member (S103), as shown in FIG. 7F, a plurality of substrates 10 are obtained linearly, and by cutting this along the cutting line IB-IB, a plurality of substrates 10 can be efficiently manufactured at once.

[0122] The method of cutting is not particularly limited, and examples thereof include methods using a disk-shaped rotary blade, an ultrasonic cutter, laser light irradiation, a blade, and the like.

[0123] <<Modification of the method for manufacturing a substrate according to the first embodiment>> In the modification of the method for manufacturing a substrate according to the first embodiment, a conductive paste 50a with a changed composition of the conductive paste 50 used in arranging the first conductive paste and the second conductive paste (S102) is used, and except that forming the first conductive member and the second conductive member (S103) is different, it is the same as the method for manufacturing a substrate according to the first embodiment. The modification of the method for manufacturing a substrate according to the first embodiment is preferable in that the warpage of the substrate 10 can be further reduced.

[0124] Hereinafter, differences between an example of a method for manufacturing a substrate according to the second embodiment and the method for manufacturing a substrate according to the first embodiment will be described.

[0125] FIG. 8A is an enlarged cross-sectional view schematically showing an enlarged state of an intermediate substrate 10' in which a conductive paste 50a is disposed on a side surface 3c of an insulating member 3. FIG. 8B is an enlarged cross-sectional view schematically showing a state of a metal member in the first conductive member 1 or the second conductive member 2 obtained by sintering the intermediate substrate 10' of FIG. 8A.

[0126] (S102: Disposing the first conductive paste and the second conductive paste) In a modification of the method for manufacturing a substrate according to the first embodiment, the following are used as the conductive paste 50a.

[0127] - Conductive paste 50a - The conductive paste 50a preferably contains a metal powder 14 and further contains an active metal powder 16 in terms of improving the adhesion between the insulating member 3 and the first conductive member 1 and the second conductive member 2, and further contains other components as necessary.

[0128] -- Metal powder -- The metal powder 14 is not particularly limited, and examples thereof include silver, copper, silver-copper eutectic alloy, copper-zinc eutectic alloy, copper-tin eutectic alloy, and the like. These may be used alone or in combination of two or more. Among these, a silver-copper eutectic alloy is preferable.

[0129] The melting point of the metal powder 14 is not particularly limited, but is preferably 700°C or higher and 1,200°C or lower, more preferably 720°C or higher and 1,100°C or lower, and still more preferably 780°C or higher and 850°C or lower.

[0130] -- Active metal powder -- The active metal powder 16 is not particularly limited, and examples thereof include TiH2, CeH2, ZrH2, MgH2, and the like. These may be used alone or in combination of two or more.

[0131] --Other Components-- In the conductive paste 50a, there are no particular restrictions on other components, and examples thereof include an organic binder 7, an inorganic filler 5, a reducing agent such as an organic acid, and the like. These may be used alone or in combination of two or more.

[0132] There are no particular restrictions on the organic binder 7, and examples thereof include a thermosetting resin and a thermoplastic resin. Specific examples of the organic binder 7 include an epoxy resin, a silicone resin, an acrylic resin, a urethane resin, a polyvinyl-based resin, an ethyl cellulose resin, a phenol resin, a polyimide resin, a polyurethane resin, a melamine resin, a polyurea resin, and the like. Further, the organic binder 7 may be a solvent and a resin material generally used as a via material. These may be used alone or in combination of two or more. Since the organic binder 7 functions as a sintering binder, it is decomposed and evaporated and removed in forming the first conductive member and the second conductive member (S103).

[0133] There are no particular restrictions on the inorganic filler 5, and examples thereof include a ceramic filler, a silica filler, a metal filler, a glass filler, and the like. These may be used alone or in combination of two or more. Among these, a ceramic filler is preferable as the inorganic filler 5. When the conductive paste 50a contains the inorganic filler 5, the thermal conductivity and heat dissipation characteristics of the first conductive member 1 and the second conductive member 2 can be improved.

[0134] There are no particular restrictions on the ceramic filler, and examples thereof include aluminum nitride (AlN), silicon nitride (Si3N4), aluminum oxide (Al2O3), silicon carbide (SiC), and the like.

[0135] Further, the inorganic filler 5 is preferably a material having a linear expansion coefficient of 8 ppm or less. Thereby, the linear coefficients of the first conductive member 1 and the second conductive member 2 can be lowered, and the improvement of the thermal shock characteristics can be achieved.

[0136] The median diameter of the inorganic filler 5 is not particularly limited, but is preferably 1 μm or more and 50 μm or less, and more preferably 2 μm or more and 15 μm or less.

[0137] Further, the inorganic filler 5 is preferably a material having a linear expansion coefficient of 5 ppm or less and a high thermal conductivity of 100 W / m·K or more. Examples of such a material include the ceramic filler. By dispersing and arranging such a material in the first conductive member 1 and the second conductive member 2, the difference in linear expansion coefficient can be alleviated and the reliability such as thermal shock characteristics can be improved.

[0138] The thermal conductivity of the inorganic filler 5 is not particularly limited, but is preferably 20 W / (m / K) or more, and more preferably 30 W / (m / K) or more at a measurement temperature of 300 K.

[0139] When the total content of the metal powder 14, the active metal powder 16, and the inorganic filler 5 in the conductive paste 50a is 100% by mass, the metal powder 14 is preferably 40% by mass or more and 95% by mass or less, the active metal powder 16 is preferably 0.5% by mass or more and 15% by mass or less, and the inorganic filler 5 is preferably 4% by mass or more and 50% by mass or less.

[0140] (S103: Forming the first conductive member and the second conductive member) In the modification of the method for manufacturing a substrate according to the first embodiment, forming the first conductive member and the second conductive member (S103) is the same as the method for manufacturing a substrate according to the first embodiment, except that the heating temperature is changed to an appropriate heating temperature for making the conductive paste 50a a sintered body.

[0141] The heating temperature when firing the conductive paste 50a is not particularly limited as long as it is equal to or lower than the melting point or glass transition point of the insulating member 3, and can be appropriately selected according to the material of the insulating member 3, but is preferably 700°C or more and 1,200°C or less, more preferably 1,100°C or less, and still more preferably 1,000°C or less.

[0142] In a modification of the method for manufacturing a substrate according to the first embodiment, it is preferable to perform firing of the first conductive paste and the second conductive paste (conductive paste 50a) without applying pressure. Thereby, voids can be suitably formed in the first conductive member 1 and the second conductive member 2. For example, when the conductive paste 50a contains copper particles, at the above heating temperature, since the melting point of copper is exceeded, if pressure is applied, a plurality of metal particles may be completely joined, and voids may not be formed in the first conductive member 1 and the second conductive member 2.

[0143] The heating time when firing the conductive paste 50a is not particularly limited, but is preferably 5 minutes or more and 60 minutes or less, more preferably 10 minutes or more and 50 minutes or less, and still more preferably 15 minutes or more and 45 minutes or less. When the heating time when firing the conductive paste 50a is 5 minutes or more and 60 minutes or less, a part of the surface of the metal particles is softened and joined so as to be connected to adjacent metal particles, and voids can be suitably formed in the first conductive member 1 and the second conductive member 2.

[0144] The first conductive member 1 and the second conductive member 2 produced using the conductive paste 50a, as an example, contain a metal 9, a metal compound 6, and an inorganic filler 5, as shown in FIG. 8B. The organic binder 7 is evaporated and removed by firing the conductive paste 50a.

[0145] The first conductive member 1 and the second conductive member 2 preferably contain 40% by mass or more and 95% by mass or less of the metal 9, 1% by mass or more and 10% by mass or less of the metal compound 6, and 4% by mass or more and 50% by mass or less of the inorganic filler 5, respectively, when the total content of the metal 9, the metal compound 6, and the inorganic filler 5 is 100% by mass. The first conductive member 1 and the second conductive member 2 can reduce volume shrinkage by containing the inorganic filler 5 at a predetermined ratio. Further, the first conductive member 1 and the second conductive member 2 can disperse the inorganic filler 5 in the continuous metal 9 by containing the metal 9 at a predetermined ratio.

[0146] When the metal 9 is arranged as the first conductive member 1 and the second conductive member 2, it is a metal member that serves as the core of the first conductive member 1 and the second conductive member 2 together with the inorganic filler 5. The metal 9 is arranged in a state where the inorganic filler 5 is dispersed.

[0147] In forming the first conductive member and the second conductive member (S103), the metal powder 14 in the conductive paste 50a is fired to become the metal 9. Therefore, the type of metal of the metal 9 is specified by the type of metal of the metal powder 14, and examples include silver, copper, silver-copper eutectic alloy, copper-zinc eutectic alloy, copper-tin eutectic alloy, etc. Among these, a silver-copper eutectic alloy is preferable.

[0148] The inorganic filler 5 is arranged in a state where a plurality of particles are dispersed in the first conductive member 1 and the second conductive member 2. Here, the plurality of inorganic fillers 5 indicates that the inorganic filler 5 is not one particle but a plurality of particles.

[0149] Also, the inorganic filler 5 is 100 μm 2 per, 10 μm 2 or more and 75 μm 2 or less in the range preferably arranged.

[0150] The metal compound 6 is formed by firing the active metal powder 16. By firing the conductive paste 50a, a reaction layer of the inorganic filler 5 and the active metal powder 16 is formed on the surface of the inorganic filler 5. The metal compound 6 is mainly arranged on at least a part or all of the surface of the inorganic filler 5 and the side surface 3c or at least a part of the side of the insulating member 3. As the metal compound 6, a filler surface metal compound 6a arranged on the surface of the inorganic filler 5 and a wall surface metal compound 6b arranged on the side surface 3c or at least a part of the side of the insulating member 3 are the metal compound 6. Preferably, by firing the active metal powder 16 and the components of the side surface 3c of the inorganic filler 5 and the insulating member 3, the filler surface metal compound 6a and the wall surface metal compound 6b are arranged as reaction products.

[0151] The filler surface metal compound 6a is a metal compound 6 and is disposed so as to cover at least a part or all of the surface of the inorganic filler 5. For example, when the inorganic filler 5 is AlN or Si3N4, the filler surface metal compound 6a reacts with TiH2 of the active metal powder 16 before firing and is formed on the surface of the inorganic filler 5 as TiN as an example. And, the filler surface metal compound 6a has unevenness continuously formed in a zigzag shape on its surface, and the surface of the inorganic filler 5 also has unevenness formed in a zigzag shape. Then, the inorganic filler 5 having the filler surface metal compound 6a disposed on its surface is in a state of being dispersed in the continuous first conductive member 1 and second conductive member 2.

[0152] The wall surface metal compound 6b is a metal compound 6 and is disposed on at least a part of the side surface 3c or the side of the insulating member 3. For example, when the insulating member 3 is at least one selected from silicon nitride, aluminum nitride, and boron nitride, the wall surface metal compound 6b generates a reaction product and is formed as a compound on the side surface 3c or the side of the insulating member 3 when the active metal powder 16 before firing is, for example, TiH2 and TiN. The wall surface metal compound 6b has unevenness continuously formed in a zigzag shape on the side surface 3c or the side of the insulating member 3, and improves the connection strength between the side surface 3c or the side of the insulating member 3 and the first conductive member 1 and the second conductive member 2.

[0153] <Method for manufacturing a substrate according to the second embodiment> The method for manufacturing a substrate according to the second embodiment is the same as the method for manufacturing a substrate according to the first embodiment except that preparing an insulating member (S101) is changed to preparing an insulating member (S201).

[0154] FIG. 9 is a flowchart showing an example of preparing an insulating member in the method for manufacturing a substrate according to the second embodiment. The method for manufacturing a substrate according to the second embodiment includes, in preparing an insulating member (S201), preparing a flat substrate (S21), processing a recess (S22), cutting (S23), disposing a metal thin film (S24), and repositioning (S25).

[0155] In preparing the insulating member (S201) in the method for manufacturing a substrate according to the second embodiment, preparing a flat substrate (S21), processing a recess (S22), cutting (S23), and repositioning (S25) are the same as preparing a flat substrate (S11), processing a recess (S12), cutting (S13), and repositioning (S14) in preparing the insulating member (S101) in the method for manufacturing a substrate according to the first embodiment. However, it is different from preparing the insulating member (S101) in the method for manufacturing a substrate according to the first embodiment in that it includes disposing a metal thin film (S24). Hereinafter, the differences from the method for manufacturing a substrate according to the first embodiment will be described with respect to an example of preparing the insulating member (S201) in the method for manufacturing a substrate according to the second embodiment.

[0156] ((S24: Disposing a metal thin film)) In disposing the metal thin film (S24), the metal thin film 4 is disposed on the upper surface 3a and the side surface 3c of the insulating member 3. By disposing the metal thin film 4 on the upper surface 3a and the side surface 3c of the insulating member 3, the adhesion to the first conductive paste and the second conductive paste is improved.

[0157] Examples of the material of the metal thin film 4 include metals such as Au, Ag, Cu, Fe, Ti, Pd, Ni, Cr, Pt, W, Al, or alloys containing these.

[0158] The method of disposing the metal thin film 4 is not particularly limited, and examples thereof include plating, vapor deposition, sputtering, and the like. When the shape of the insulating member 3 is a polygonal shape, a substantially hemispherical shape, or the like, the adhesion amount of the material of the metal thin film 4 increases.

[0159] <Method for manufacturing a substrate according to the third embodiment> FIG. 10 is a flowchart showing an example of a method for manufacturing a substrate according to the third embodiment. The method for manufacturing a substrate according to the third embodiment includes preparing an insulating member (S301), disposing a first conductive paste and a second conductive paste (S302), forming a first conductive member and a second conductive member (S303), and polishing or grinding (S304).

[0160] In the method for manufacturing a substrate according to the third embodiment, preparing the insulating member (S301), disposing the first conductive paste and the second conductive paste (S302), and forming the first conductive member and the second conductive member (S303) are the same as preparing the insulating member (S101), disposing the first conductive paste and the second conductive paste (S102), and forming the first conductive member and the second conductive member (S103) in the method for manufacturing a substrate according to the first embodiment. However, it is different from the method for manufacturing a substrate according to the first embodiment in that it includes polishing or grinding (S304). Hereinafter, differences from the method for manufacturing a substrate according to the first embodiment will be described with respect to an example of the method for manufacturing a substrate according to the third embodiment.

[0161] (S304: Polishing or grinding) In polishing or grinding (S304), the upper surface 1a of the first conductive member 1 and the upper surface 2a of the second conductive member 2 are polished or ground, and the upper surface 3a of the insulating member 3 is exposed from the first conductive member 1 and the second conductive member 2. In particular, polishing or grinding (S304) is preferably performed when the first conductive paste and the second conductive paste are disposed in such a manner as to contact the upper surface 3a of the insulating member 3 in disposing the first conductive paste and the second conductive paste (S102).

[0162] The upper surfaces 1a of the first conductive member 1 and 2a of the second conductive member 2 have recesses due to voids in the metal member. Therefore, in order to eliminate the recesses on the upper surfaces 1a of the first conductive member 1 and 2a of the second conductive member 2, polishing or grinding (S304) is preferably polishing. By polishing the upper surfaces 1a of the first conductive member 1 and 2a of the second conductive member 2, the dimensions of the recesses can be reduced and the number of recesses can be decreased due to the extension of the metal by polishing. As a result, the upper surfaces 1a of the first conductive member 1 and 2a of the second conductive member 2 become smooth, and when the substrate 10 is used in a light-emitting device, the light-emitting elements can be suitably arranged.

[0163] <Method for manufacturing a substrate according to the fourth embodiment> FIG. 11 is a flowchart showing an example of a method for manufacturing a substrate according to the fourth embodiment. The method for manufacturing a substrate according to the fourth embodiment includes preparing an insulating member (S401), disposing a first conductive paste and a second conductive paste (S402), forming a first conductive member and a second conductive member (S403), polishing or grinding (S404), and plating (S405).

[0164] In the method for manufacturing a substrate according to the fourth embodiment, preparing an insulating member (S401), disposing a first conductive paste and a second conductive paste (S402), forming a first conductive member and a second conductive member (S403), and polishing or grinding (S404) are the same as preparing an insulating member (S301), disposing a first conductive paste and a second conductive paste (S302), forming a first conductive member and a second conductive member (S303), and polishing or grinding (S304) in the method for manufacturing a substrate according to the third embodiment, but are different from the method for manufacturing a substrate according to the third embodiment in that plating (S405) is included. Hereinafter, differences between an example of the method for manufacturing a substrate according to the fourth embodiment and the method for manufacturing a substrate according to the third embodiment will be described.

[0165] (S405: Plating) In plating (S405), after polishing or grinding (S404) and before cutting the plurality of linear substrates 10, the surface of the substrate 10 after polishing or grinding is plated to form a plating layer 60. Thereby, when the substrate 10 is used in a light-emitting device, the electrode of the light-emitting element can be indirectly electrically connected via the plating layer 60.

[0166] In plating (S405), plating 60 is applied to the upper surface 1a and the lower surface 1b of the first conductive member 1 and the exposed surfaces of the upper surface 2a and the lower surface 2b of the second conductive member 2 of the substrate 10 after polishing or grinding.

[0167] The plating 60 can be formed by electroless plating. The plating may be performed through a mask.

[0168] 〔Light-emitting device〕 The light-emitting device 100 according to the embodiment includes a substrate 10 and a light-emitting element 20 disposed on the substrate 10, and further includes other members as necessary.

[0169] FIG. 12 is a schematic cross-sectional view showing an example of the light-emitting device 100 according to the embodiment. As shown in FIG. 12, the light-emitting device 100 according to the embodiment includes a substrate 10, a light-emitting element 20, a light-transmissive member 23, and a light-reflecting member 30. Hereinafter, each configuration of the light-emitting device 100 will be described.

[0170] The light-emitting device 100 is a device in which the light-emitting element 20 is disposed on the substrate 10 to emit light. In FIG. 12, the number of the light-emitting elements 20 is one, but the number of the light-emitting elements 20 may be plural, and the arrangement thereof is not particularly limited, such as being in a row.

[0171] The light-emitting device 100 includes the substrate 10 described in the above item [Substrate], a light-emitting element 20 electrically connected to the first conductive member 1 and the second conductive member 2 of the substrate 10, a light-transmissive member 23 disposed on the light extraction surface side of the light-emitting element 20, and metal bumps 12 for electrically connecting the first conductive member 1 and the second conductive member 2. Further, the light-emitting device 100 has a light-reflecting member 30 that covers the side surface of the light-emitting element 20 and the first surface 10A of the substrate 10 as an example.

[0172] In the substrate 10, wirings of various patterns can be formed according to the application. In the light-emitting device 100 according to the embodiment, the light-emitting element 20 has a pair of element electrodes 24 on the same surface side, and is face-down mounted with the surface having the element electrodes 24 facing the first surface 10A of the substrate 10.

[0173] Note that the light-emitting device 100 according to the embodiment may be face-up mounted by placing a pair of element electrodes 24 of the light-emitting element 20 on the side opposite to the surface in contact with the substrate 10 and connecting them to the first conductive member 1 and the second conductive member 2 of the substrate 10 by wires.

[0174] (Light-emitting element) The light-emitting element 20 has a pair of element electrodes 24, an element substrate 22, and a semiconductor laminate 21.

[0175] As an example, the light-emitting element 20 includes a semiconductor laminate 21 on the bottom surface side of the element substrate 22, and has a pair of element electrodes 24 on the semiconductor laminate 21 side.

[0176] As the semiconductor laminate 21, any composition can be used according to the desired emission wavelength. For example, a nitride semiconductor (In x Al y Ga 1-x-y N, 0≦X, 0≦Y, X + Y≦1), GaP, or GaAlAs or AlInGaP capable of red emission can be used. These may be used alone or in combination of two or more. Further, the size and shape of the light-emitting element 20 can be appropriately selected according to the purpose of use.

[0177] As an example, a sapphire substrate or a silicon substrate is used as the element substrate 22.

[0178] The element electrode 24 is connected to the first conductive member 1 and the second conductive member 2 of the substrate 10 via the bonding member 11 by the metal bump 12. One of the element electrodes 24 is a p - electrode, and it is arranged at a distance that does not electrically short - circuit with the other n - electrode. As an example, the element electrode 24 is configured to arrange the p - electrode and the n - electrode at one location each, but it may also be configured such that either one is arranged at two locations and the other is arranged at one location.

[0179] (Light - transmissive member) The light - transmissive member 23 is arranged on the planar side that becomes the light - extraction surface of the element substrate 22. The light - transmissive member 23 is made of, for example, a light - transmissive resin material, and an epoxy resin, a silicone resin, or a resin mixture of these can be used. The light - transmissive member 23 may contain a phosphor. For example, by containing a phosphor that absorbs blue light from the light - emitting element 20 and emits yellow light, white light can be emitted. Also, the light - transmissive member 23 may contain a plurality of types of phosphors. For example, by containing a phosphor that absorbs blue light from the semiconductor laminate 21 and emits green light and a phosphor that emits red light, white light can also be emitted from the light - emitting element 20.

[0180] Examples of such phosphors include yttrium aluminum garnet - based phosphors (e.g., Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet - based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet - based phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), β - sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α - sialon phosphors (e.g., Mz(Si,Al) 12 (O,N) 16(However, 0 < z ≤ 2, and M is a lanthanide element excluding Li, Mg, Ca, Y, La, and Ce), nitride-based phosphors such as CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), fluoride-based phosphors such as KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si,Al)F6:Mn), or MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), or quantum dot phosphors such as perovskite and chalcopyrite can be used.

[0181] (Metal bump) The metal bump 12 is a member that electrically connects the element electrode 24 to the first conductive member 1 and the second conductive member 2. The metal bump 12 may be disposed on either the element electrode 24 side or the first conductive member 1 and the second conductive member 2 side. Also, the shape, size, and number of the metal bumps 12 can all be appropriately set as long as they can be disposed within the range of the element electrode 24. Further, the size of the metal bump 12 can be appropriately adjusted according to the size of the semiconductor laminate 21, the emission output of the required light-emitting element, etc., and for example, a size with a diameter of about several tens of μm to several hundreds of μm can be mentioned.

[0182] The metal bump 12 can be formed of, for example, Au, Ag, Cu, Al, Sn, Pt, Zn, Ni, or an alloy thereof. The metal bump 12 can be formed of, for example, a stud bump known in the art. The stud bump can be formed by a stud bump bonder, a wire bonding device, etc. Also, the metal bump 12 may be formed by a method known in the art such as electrolytic plating, electroless plating, vapor deposition, sputtering.

[0183] The metal bumps 12 are joined here, for example, via a joining member 11. Examples of the joining member 11 used here include solders such as tin-bismuth, tin-copper, tin-silver, and gold-tin, alloys mainly composed of Au and Sn, alloys mainly composed of Au and Si, alloys mainly composed of Au and Ge, etc., eutectic alloys, or paste materials such as silver, gold, and palladium, anisotropic conductive materials such as ACP and ACF, brazing materials of low melting point metals, conductive adhesives combining these, conductive composite adhesives, etc.

[0184] (Light reflecting member) The light reflecting member 30 is a member having light reflectivity. The light reflecting member 30 is disposed so as to cover the first surface 10A of the substrate 10 and to cover the side surface of the light emitting element 20. Further, the light reflecting member 30 is disposed so as to expose the light extraction surface of the light emitting element 20 and is disposed in the same plane as the light reflecting member 30 of the light emitting element 20. Incidentally, as an example, the light reflecting member 30 is also disposed between the lower surface of the light emitting element 20 and the first surface 10A of the substrate 10.

[0185] In order to effectively utilize the light from the light emitting element 20, the light reflecting member 30 preferably has a high reflectivity. The light reflecting member 30 is preferably white. The reflectivity of the light reflecting member 30 is preferably, for example, 90% or more, more preferably 94% or more, at the wavelength of the light emitted by the light emitting element 20.

[0186] As the resin for the light reflecting member 30, for example, thermoplastic resins such as acrylic resin, polycarbonate resin, cyclic polyolefin resin, polyethylene terephthalate resin, polyethylene naphthalate resin, or polyester resin, or thermosetting resins such as epoxy resin or silicone resin can be used. Further, as the light diffusing material, for example, known materials such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, or glass can be used.

[0187] Note that in the light-emitting device 100, one light-emitting element 20 is regarded as one unit and serves as a control unit for brightness and lighting and extinguishing. However, the number of light-emitting elements 20 included in one unit may be one or a plurality. For example, four light-emitting elements 20 arranged in one row and four columns or two rows and two columns, nine light-emitting elements 20 arranged in three rows and three columns, etc. can be regarded as one unit, and the number of light-emitting elements 20 is not limited.

[0188] <<Application Example of Light-Emitting Device>> Note that as shown in FIGS. 13A and 13B, the light-emitting device 100 may be a light-emitting module 200 including a plurality (11 in the drawing) arranged in a row, or may be a form in which 11 light-emitting devices 100 are mounted on one substrate 10. The configuration in the case of the light-emitting module 200 will be described.

[0189] FIG. 13A is a perspective view showing an application example of the light-emitting device according to the embodiment. FIG. 13B is a cross-sectional view showing the XIIIB-XIIIB cross-section of FIG. 13A. Note that FIG. 13B shows a partial configuration of FIG. 13A with some components omitted.

[0190] The light-emitting module 200 includes 11 light-emitting devices 100 arranged in a row, has a frame body 140 outside the light reflection member 30, and a module substrate 150 is connected to the surface of the substrate 10 on the side opposite to the first surface 10A of the first conductive member 1 and the second conductive member 2.

[0191] The frame body 140 is a member for surrounding the light reflection member 30 that covers a plurality of light-emitting devices 100. The frame body 140 is formed in a rectangular ring shape that is, for example, rectangular in plan view, and is arranged so as to surround the periphery of the light reflection member 30.

[0192] The frame body 140 can be formed using a frame-shaped member made of metal, alloy, or ceramics. Examples of the metal include Fe, Cu, Ni, Al, Ag, Au, Al, Pt, Ti, W, Pd, etc. Examples of the alloy include an alloy containing at least one selected from the group consisting of Fe, Cu, Ni, Al, Ag, Au, Al, Pt, Ti, W, and Pd.

[0193] Further, a resin material may be used as the frame body 140. In this case, the above-described metal, alloy, or ceramic member may be embedded in the frame body 140 formed of the resin material, or a part of the frame body 140 may be formed of the resin material and the other part may be formed of the metal, alloy, or ceramic member.

[0194] The module substrate 150 is a member on which the light-emitting device 100 is mounted and electrically connects the light-emitting device 100 to the outside. The module substrate 150 is formed, for example, in a substantially rectangular shape in plan view. The module substrate 150 includes a substrate portion 160 and a wiring board portion 170.

[0195] As the material of the substrate portion 160, for example, it is preferable to use an insulating material, and it is preferable to use a material that is difficult to transmit light emitted from the light-emitting element 20, external light, or the like. For example, ceramics such as aluminum oxide, aluminum nitride, and mullite; thermoplastic resins such as polyamide, polyphthalamide, polyphenylene sulfide, and liquid crystal polymer; resins such as epoxy resin, silicone resin, modified epoxy resin, urethane resin, and phenol resin can be used. Among these, it is preferable to use ceramics having excellent heat dissipation characteristics as the material of the substrate portion 160.

[0196] Further, the wiring board portion 170 is formed on the substrate portion 160 at a position facing the first conductive member 1 and the second conductive member 2 on the surface of the substrate 10 of the light-emitting device 100 opposite to the first surface 10A. Examples of the material of the wiring board portion 170 include those exemplified as the materials used for the first conductive member 1 and the second conductive member 2.

[0197] Note that the module substrate 150 is joined to the frame body 140 via a conductive adhesive 151, and is arranged such that the first conductive member 1 and the second conductive member 2 are joined to the wiring board portion 170. As the conductive adhesive 151, for example, eutectic solder, conductive paste, bumps, or the like may be used. In the light-emitting device 100, protection elements 125 are respectively arranged on the substrate 10 in parallel with the light-emitting elements 20.

[0198] Since the light-emitting module 200 is configured as described above, when driven, it operates as follows. That is, current is supplied from an external power source to the light-emitting element 20 through the wiring board portion 170, the first conductive member 1, the second conductive member 2, and the element electrode 24, causing the light-emitting element 20 to emit light. The light emitted by the light-emitting element 20 travels upward, and the light that travels upward is taken out to the outside above the light-emitting device 100 through the translucent member 23. Also, the light that travels downward is reflected by the substrate 10 and taken out to the outside of the light-emitting device 100 through the translucent member 23. Further, the light that travels between the light-emitting element 20 and the frame body 140 is reflected by the light reflection member 30 and the frame body 140 and taken out to the outside of the light-emitting device 100 through the translucent member 23. Moreover, the light that travels between the light-emitting elements 20 is reflected by the light reflection member 30 and taken out to the outside of the light-emitting device 100 through the translucent member 23. At this time, by narrowing the space between the translucent members 23 (for example, to 0.2 mm or less), for example, when the light-emitting module 200 is used as a light source for a vehicle headlight, the configuration of the optical system can be made simple and compact.

[0199] When manufacturing the light-emitting module 200, the light-emitting devices 100 are arranged on a sheet member, the frame body 140 is disposed around them, and in this state, the light reflection member 30 is filled in the space surrounded by the frame body 140 and the sheet member to arrange the light reflection member 30. Thereafter, the light-emitting device 100 supported by the frame body 140 and the light reflection member 30 is arranged on the module substrate 150 on which the wiring board portion 170 and the conductive adhesive 151 are arranged, and the light-emitting module 200 is manufactured by electrically connecting the first conductive member 1 and the second conductive member 2 to the wiring board portion 170.

[0200] 〔Method for manufacturing a light-emitting device〕 The method for manufacturing a light-emitting device according to the embodiment includes arranging the light-emitting element 20 on the substrate 10, and further includes other steps as necessary.

[0201] FIG. 14 is a flowchart showing an example of a method for manufacturing a light-emitting device according to an embodiment. The method for manufacturing a light-emitting device according to the embodiment includes preparing a substrate (S501), disposing a light-emitting element (S502), and disposing a light-reflecting member (S503). Hereinafter, an example of the method for manufacturing a light-emitting device according to the embodiment will be described.

[0202] FIG. 15A is a cross-sectional view schematically showing preparation of a substrate (S501) in the method for manufacturing a light-emitting device according to the embodiment. FIG. 15B is a cross-sectional view schematically showing disposition of a bonding member 11 on the substrate in the method for manufacturing a light-emitting device according to the embodiment. FIG. 15C is a cross-sectional view schematically showing disposition of a light-emitting element (S502) in the method for manufacturing a light-emitting device according to the embodiment. FIG. 15D is a cross-sectional view schematically showing disposition of a light-reflecting member (S503) in the method for manufacturing a light-emitting device according to the embodiment.

[0203] (S501: Preparing a substrate) In preparing the substrate 10 (S501), the substrate 10 is prepared as described in the item [Manufacturing method of substrate]. The substrate 10 is as described in the item [Substrate].

[0204] Note that the substrate 10 may have a plurality of regions where the light-emitting elements 20 are disposed, and may be sized to be singulated for each light-emitting device 100 or sized for each light-emitting device 100 after the light-reflecting member 30 is disposed.

[0205] (S502: Disposing a light-emitting element) In disposing the light-emitting element (S502), the light-emitting element 20 is disposed on the substrate 10. In disposing the light-emitting element (S502), the element electrode 24 of the light-emitting element 20 is connected to the bonding member 11 disposed on the first conductive member 1 and the second conductive member 2 using the metal bump 12. Note that the light-emitting element 20 in a state where the light-transmissive member 23 is connected to the element substrate 22 in advance is disposed. When the light-transmissive member 23 is bonded to the element substrate 22, a light-transmissive bonding material is used.

[0206] (S503: Arranging the light reflection member) In arranging the light reflection member (S503), the light reflection member 30 is arranged so as to cover the first surface 10A of the substrate 10 and the side surface of the light emitting element 20. In arranging the light reflection member (S503), the light reflection member 30 is arranged on the substrate 10 so as to surround the light emitting element 20 and expose the upper surface of the light transmissive member 23 which serves as the light extraction surface of the light emitting element 20. The light reflection member 30 is arranged to be rectangular in plan view.

[0207] Note that, in the method for manufacturing the light emitting device according to the embodiment, after arranging the light reflection member (S503), a singulation operation is performed as necessary. In the light emitting device 100, one unit of the light emitting device 100 is set in advance according to the number of the light emitting elements 20 used. Therefore, when a plurality of light emitting devices 100 are manufactured together, a singulation operation is performed. When performing the singulation operation, a plurality of light emitting devices 100 are produced by cutting in a grid pattern. Further, as a method of cutting, for example, methods using a disk-shaped rotary blade, an ultrasonic cutter, laser light irradiation, a blade, etc. can be mentioned.

[0208] As described above, the present invention has been described based on specific embodiments, but these are merely presented as examples, and the present invention is not limited by the above embodiments. The above embodiments can be implemented in various other forms, and various combinations, omissions, replacements, additions, changes, etc. can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalent scope thereof.

[0209] In addition to the above embodiments, the following supplementary notes are further disclosed. (Supplementary Note 1) A first conductive member including a metal member and having an upper surface, a lower surface, and side surfaces connecting the upper surface and the lower surface; A second conductive member including a metal member, separated from the first conductive member, and having an upper surface, a lower surface, and side surfaces connecting the upper surface and the lower surface; An insulating member having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface, which is disposed between side surfaces of the first conductive member and side surfaces of the second conductive member; having, a substrate having a plurality of voids of 5 μm or less in a metal member included in the first conductive member and the second conductive member. (Appendix 2) The substrate according to Appendix 1, wherein the metal member included in the first conductive member and the second conductive member is formed by connecting particles having a median diameter of 0.1 μm or more and 10 μm or less. (Appendix 3) The substrate according to Appendix 1 or 2, wherein a ratio of void portions in a cross-sectional view is 5% or more and 25% or less in the first conductive member and the second conductive member. (Appendix 4) The substrate according to any one of Appendices 1 to 3, wherein in a cross-sectional view in a thickness direction of the substrate, areas of the first conductive member and the second conductive member are larger than an area of the insulating member. (Appendix 5) The insulating member is ceramics, and side surfaces of the insulating member are joined to side surfaces of the first conductive member and side surfaces of the second conductive member, respectively, in the substrate according to any one of Appendices 1 to 4. (Appendix 6) The substrate according to any one of Appendices 1 to 5, wherein a metal thin film is disposed between the insulating member and the first conductive member and between the insulating member and the second conductive member. (Appendix 7) The substrate according to any one of Appendices 1 to 6, wherein upper surfaces of the first conductive member and the second conductive member have three or less recesses having dimensions of 0.1 μm or more and 5 μm or less. (Appendix 8) In a cross-sectional view in a thickness direction of the substrate passing through the first conductive member, the insulating member, and the second conductive member, the insulating member has a wider width of a lower surface than an upper surface in the substrate according to any one of Appendices 1 to 7. (Appendix 9) A light-emitting device including the substrate according to any one of Appendices 1 to 8 and a light-emitting element disposed on the substrate. (Appendix 10) Prepare an insulating member having an upper surface, a lower surface, and side surfaces connecting the upper surface and the lower surface, Dispose a first conductive paste containing metal particles with a median diameter of 0.1 μm or more and 10 μm or less and a second conductive paste containing metal particles with a median diameter of 0.1 μm or more and 10 μm or less on the side surface or the side of the insulating member, Fire the first conductive paste and the second conductive paste at a temperature equal to or lower than the melting point or glass transition point of the insulating member to form a first conductive member and a second conductive member, A method for manufacturing a substrate including the above. (Appendix 11) In the preparation, the insulating member is a fired ceramic, and it is a method for manufacturing a substrate according to Appendix 10. (Appendix 12) In the preparation, in a cross-sectional view in the thickness direction of the substrate passing through the first conductive member, the insulating member, and the second conductive member, the insulating member has a wider width on the lower surface than on the upper surface, and it is a method for manufacturing a substrate according to Appendix 10 or 11. (Appendix 13) In the preparation, a metal thin film is disposed on the upper surface and the side surface of the insulating member, and it is a method for manufacturing a substrate according to any one of Appendices 10 to 12. (Appendix 14) In the disposal, the first conductive paste and the second conductive paste further contain at least one of a resin and a solvent, and at least one of the resin and the solvent is 0.2% by mass or more and 50% by mass or less based on the total mass of the first conductive paste or the second conductive paste, and it is a method for manufacturing a substrate according to any one of Appendices 10 to 13. (Appendix 15) In forming the first conductive member and the second conductive member, the firing of the first conductive paste and the second conductive paste is performed together with pressurization, and it is a method for manufacturing a substrate according to any one of Appendices 10 to 14. (Appendix 16) In forming the first conductive member and the second conductive member, the first conductive paste and the second conductive paste are pastes containing copper particles, and firing of the first conductive paste and the second conductive paste is performed at a temperature of 150°C or higher and 300°C or lower, which is a method for manufacturing a substrate according to any one of Appendices 10 to 15. (Appendix 17) In forming the first conductive member and the second conductive member, the first conductive paste and the second conductive paste are pastes containing particles of a silver-copper eutectic alloy, and firing of the first conductive paste and the second conductive paste is performed at a temperature of 700°C or higher and 1,200°C or lower, which is a method for manufacturing a substrate according to any one of Appendices 10 to 15. (Appendix 18) In the arranging, the first conductive paste and the second conductive paste further contain active metal powder, which is a method for manufacturing a substrate according to any one of Appendices 10 to 17. (Appendix 19) In the arranging, in addition to the side surface or the side of the insulating member, the first conductive paste and the second conductive paste are arranged so as to further contact the upper surface of the insulating member. After forming the first conductive member and the second conductive member, the upper surfaces of the first conductive member and the second conductive member are polished or ground, and the method for manufacturing a substrate according to any one of Appendices 10 to 18 further includes exposing the upper surface of the insulating member from the first conductive member and the second conductive member. (Appendix 20) A method for manufacturing a light-emitting device, in which a light-emitting element is arranged on a substrate according to any one of Appendices 1 to 8.

Explanation of Reference Numerals

[0210] 1... First conductive member 1a... Upper surface of the first conductive member 1b... Lower surface of the first conductive member 1c... Side surface of the first conductive member 2... Second conductive member 2a... Upper surface of the second conductive member 2b... Lower surface of the second conductive member 2c…Side surface of the second conductive member 3…Insulating member 3a…Upper surface of the insulating member 3b…Lower surface of the insulating member 3c, 3c1, 3c2…Side surfaces of the insulating member 3'…Flat substrate 3'A…Intermediate body 4…Metal thin film 5…Inorganic filler 6…Metal compound 6a…Filler surface metal compound 6b…Wall surface metal compound 7…Organic binder 8…Recess 9…Metal 10…Substrate 10A…First surface of substrate 10 11…Bonding member 12…Metal bump 14…Metal powder 16…Active metal powder 20…Light-emitting element 21…Semiconductor laminate 22…Element substrate 23…Light-transmissive member 24…Element electrode 30…Light reflection member 40…Base material 50, 50a…Conductive paste 60…Plating layer 100, 100A…Light-emitting device 125…Protection element 140…Frame body 150…Module substrate 151…Conductive adhesive 160…Substrate part 170…Wiring board part 200…Light-emitting module

Claims

1. A first conductive member including a metal member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface; A second conductive member including a metal member, spaced apart from the first conductive member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface; An insulating member disposed between the side surfaces of the first conductive member and the side surfaces of the second conductive member, having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface; And having; A substrate having a plurality of voids of 5 μm or less in the metal members of the first conductive member and the second conductive member.

2. The substrate according to claim 1, wherein the metal members of the first conductive member and the second conductive member are formed by connecting particles having a median diameter of 0.1 μm or more and 10 μm or less.

3. The substrate according to claim 1, wherein the ratio of the void portion in the cross-sectional view of the first conductive member and the second conductive member is 5% or more and 25% or less.

4. The substrate according to claim 1, wherein in the cross-sectional view in the thickness direction of the substrate, the areas of the first conductive member and the second conductive member are larger than the area of the insulating member.

5. The insulating member is ceramics, The side surface of the insulating member is joined to each of the side surfaces of the first conductive member and the second conductive member, the substrate according to claim 1.

6. A metal thin film is disposed between the insulating member and the first conductive member and between the insulating member and the second conductive member, the substrate according to claim 1.

7. The substrate according to claim 1, wherein the upper surfaces of the first conductive member and the second conductive member have 3 or less recesses having dimensions of 0.1 μm or more and 5 μm or less.

8. In the cross-sectional view in the thickness direction of the substrate passing through the first conductive member, the insulating member, and the second conductive member, the insulating member has a wider width at the lower surface than at the upper surface, the substrate according to claim 1.

9. A light-emitting device having the substrate according to claim 1 and a light-emitting element disposed on the substrate.

10. Preparing an insulating member having an upper surface and a lower surface, and side surfaces connecting the upper surface and the lower surface; Disposing a first conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less and a second conductive paste containing metal particles having a median diameter of 0.1 μm or more and 10 μm or less on the side surface or the side of the insulating member; Firing the first conductive paste and the second conductive paste at a temperature equal to or lower than the melting point or glass transition point of the insulating member to form a first conductive member and a second conductive member; A method for manufacturing a substrate including the above.

11. The method for manufacturing a substrate according to claim 10, wherein in the preparing step, the insulating member is a fired ceramic.

12. The method for manufacturing a substrate according to claim 10, wherein in the preparing step, in a cross-sectional view in the thickness direction of the substrate passing through the first conductive member, the insulating member, and the second conductive member, the insulating member has a wider width on the lower surface than on the upper surface.

13. The method for manufacturing a substrate according to claim 10, wherein in the preparing step, a metal thin film is disposed on the upper surface and side surface of the insulating member.

14. The method for manufacturing a substrate according to claim 10, wherein in the disposing step, the first conductive paste and the second conductive paste further contain at least one of a resin and a solvent, and at least one of the resin and the solvent is 0.2% by mass or more and 50% by mass or less based on the total mass of the first conductive paste or the second conductive paste.

15. The method for manufacturing a substrate according to claim 10, wherein in the step of forming the first conductive member and the second conductive member, the firing of the first conductive paste and the second conductive paste is performed under pressure.

16. The method for manufacturing a substrate according to claim 10, wherein in the step of forming the first conductive member and the second conductive member, the first conductive paste and the second conductive paste are pastes containing copper particles, and the firing of the first conductive paste and the second conductive paste is performed at a temperature of 150°C or higher and 300°C or lower.

17. The method for manufacturing a substrate according to claim 10, wherein in the step of forming the first conductive member and the second conductive member, the first conductive paste and the second conductive paste are pastes containing particles of a silver-copper eutectic alloy, and the firing of the first conductive paste and the second conductive paste is performed at a temperature of 700°C or higher and 1,200°C or lower.

18. The method for manufacturing a substrate according to claim 10, wherein in the disposing step, the first conductive paste and the second conductive paste further contain an active metal powder.

19. In the step of disposing, in addition to the side surface or the side of the insulating member, the first conductive paste and the second conductive paste are disposed so as to be in contact with the upper surface of the insulating member. After forming the first conductive member and the second conductive member, the method for manufacturing a substrate according to claim 10, further comprising polishing or grinding the upper surfaces of the first conductive member and the second conductive member to expose the upper surface of the insulating member from the first conductive member and the second conductive member.

20. A method for manufacturing a light-emitting device, comprising disposing a light-emitting element on the substrate according to claim 1.

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