Light-emitting apparatus and manufacturing metho of light-emitting apparatus

Abstract

To provide a light-emitting apparatus capable of suppressing damage to a light-emitting device during manufacture while achieving high contrast of emitted light, and a manufacturing method of the light-emitting apparatus.SOLUTION: A light-emitting apparatus comprises: a substrate; a light-emitting device including a light-emitting layer disposed on the substrate; a phosphor part which is disposed on the light-emitting device and includes a phosphor excited by light emitted from the light-emitting layer and emitting fluorescent light and which has a bottom face larger than a top face of the light-emitting device; and a cover body continuously covering the light-emitting device and a side face of the phosphor part on the substrate. The cover body includes a light absorption part which is formed in at least a portion of a region along an outer edge of a top face of the phosphor on a top face of the cover body and has absorbability with respect to light of a wavelength in a visible light region, the absorbability higher than that of the other portion. In a top face view where the phosphor part is viewed from an upper side, the light absorption part and the phosphor part are separated.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a light-emitting device and a method for manufacturing the light-emitting device.

Background Art

[0002] A light-emitting device including a light-emitting element mounted on a substrate and a covering member is disclosed. For example, Patent Document 1 discloses a light-emitting device having a light-emitting element, a light-transmitting member adhered to the upper surface of the light-emitting element, and a covering member covering the side surfaces of the light-emitting element and the light-transmitting member. Further, Patent Document 1 also discloses that, for example, the entire outer surface of the covering member is colored black in order to increase the contrast of the emitted light of the light-emitting device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the light-emitting device disclosed in Patent Document 1, when the outer surface of the covering member is blackened, for example, a method of irradiating the outer surface of the covering member with laser light is used. When such a method is used, there is a risk that the irradiation energy of the laser light propagates through the covering member and reaches the light-emitting element, and the light-emitting element may fail due to damage caused by the energy.

[0005] The present invention has been made in view of the above points, and provides a light-emitting device and a method for manufacturing the light-emitting device capable of suppressing damage to the light-emitting element during manufacturing while achieving high contrast of the emitted light.

Means for Solving the Problems

[0006] The light-emitting device according to the present invention includes a substrate, a light-emitting element including a light-emitting layer disposed on the substrate, and a phosphor disposed on the light-emitting element and excited by light emitted from the light-emitting layer to emit fluorescence, and the phosphor portion has a size of the lower surface larger than that of the upper surface of the light-emitting element, and a covering body that continuously covers the side surfaces of the light-emitting element and the phosphor portion on the substrate. The covering body has a light absorption portion formed in at least a part of a region along the outer edge of the upper surface of the phosphor on the upper surface of the covering body and having a higher light absorption property for light having a wavelength in the visible light region than other portions. In a top view of the phosphor portion viewed from above, the light absorption portion and the phosphor portion are separated from each other.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same reference numerals are given to the same components, and the description of the overlapping components is omitted.

Examples

[0009] [Outline of the Light-Emitting Device 100] With reference to FIGS. 1 and 2, the configuration of the light-emitting device 100 according to Example 1 will be described. FIG. 1 is a top view of the light-emitting device 100. FIG. 2 is a cross-sectional view taken along line 2-2 of the light-emitting device 100 shown in FIG. 1.

[0010] As shown in FIG. 2, the light-emitting device 100 includes a support substrate 11, a light-emitting element 13 disposed on the support substrate 11, a phosphor portion 15 disposed on the light-emitting element 13, and a covering body 17 that covers the side surfaces of the light-emitting element 13 and the phosphor portion 15.

[0011] In FIG. 2, the vertical direction in the figure is the height direction of the light-emitting device 100, and the horizontal direction in the figure is the width direction of the light-emitting device 100. Also, in FIG. 2, a center line CL passing through the center in the width direction of the light-emitting device 100 is shown by a two-dot chain line.

[0012] [Support Substrate 11] First, the support substrate 11 will be described. The support substrate 11 is a flat substrate having a rectangular upper surface shape. The support substrate 11 is made of a material having electrical insulation properties such as aluminum nitride (AlN) or aluminum oxide (Al2O3), for example.

[0013] [Light-Emitting Element 13] Next, the configuration of the light-emitting element 13 will be described. The light-emitting element 13 is disposed on the support substrate 11 as described above and is a light-emitting diode (LED) having a rectangular upper surface shape.

[0014] The light-emitting element 13 includes a semiconductor structure layer 21 having a light-emitting layer, a light-transmitting substrate 22 disposed on the upper surface of the semiconductor structure layer 21, and a p electrode 23 and an n electrode 24 disposed on the lower surface of the semiconductor structure layer 21.

[0015] The semiconductor structure layer 21 is a semiconductor laminate composed of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (none of which are shown), each of which has gallium nitride (GaN) as a main material. When the light-emitting element 13 is driven, blue light with a peak wavelength of about 450 nm is emitted from the light-emitting layer of the semiconductor structure layer 21.

[0016] The light-transmitting substrate 22 is a flat substrate with a rectangular upper surface shape. The light-transmitting substrate 22 is made of a material that is transparent to blue light emitted from the light-emitting layer of the semiconductor structure layer 21, such as sapphire (Al2O3) or GaN. Note that the light-transmitting substrate 22 is also a growth substrate for the semiconductor structure layer 21. Further, the thickness of the light-transmitting substrate 22 in the vertical direction is greater than the thickness of the semiconductor structure layer 21.

[0017] The p-electrode 23 is an electrode electrically connected to the p-type semiconductor layer of the semiconductor structure layer 21. The p-electrode 23 is joined to a p-side wiring (not shown) formed on the upper surface of the support substrate 11 via a conductive joining member (not shown).

[0018] The n-electrode 24 is an electrode electrically connected to the n-type semiconductor layer via a through electrode (not shown) that penetrates the light-emitting layer and the p-type semiconductor layer of the semiconductor structure layer 21 in the vertical direction and whose side surfaces are covered with an insulator. In other words, the n-electrode 24 is electrically connected only to the n-type semiconductor layer and is insulated from the light-emitting layer and the p-type semiconductor layer. The n-electrode 24 is joined to an n-side wiring (not shown) formed on the upper surface of the support substrate 11 via a conductive joining member (not shown).

[0019] As described above, the light-emitting element 13 includes the semiconductor structure layer 21, the light-transmitting substrate 22 disposed on the upper surface of the semiconductor structure layer 21, and the p-electrode 23 and the n-electrode 24 disposed on the lower surface of the semiconductor structure layer 21 and joined to the support substrate 11, respectively. That is, in the light-emitting device 100, the light-emitting element 13 is flip-chip mounted on the support substrate 11.

[0020] [Phosphor portion 15] Next, the phosphor portion 15 will be described. The phosphor portion 15 is a plate-like body with a rectangular upper surface shape disposed on the light-emitting element 13. The phosphor portion 15 is configured such that the size of the lower surface is larger than the upper surface of the light-emitting element 13. In other words, the phosphor portion 15 has a shade portion that protrudes laterally from the upper surface of the light-emitting element 13 in a top view.

[0021] For example, the size of the upper surface of the light-emitting element 13 is 1 mm square, and the size of the lower surface of the phosphor part 15 is 1.15 mm square. That is, in the light-emitting device 100, the lower surface of the phosphor part 15 is 15% larger than the upper surface of the light-emitting element 13. In the light-emitting device 100 of the present embodiment, the thickness of the light-emitting element 13 is 0.15 mm, and the thickness of the phosphor part 15 is 0.15 mm.

[0022] The phosphor part 15 is adhered to the upper surface of the light-transmitting substrate 22 of the light-emitting element 13 by an adhesive member 26 made of a light-transmitting resin such as silicone resin. The adhesive member 26 may be a layer made of a low-temperature sintered body of ceramic ultrafine particles.

[0023] The phosphor part 15 is made of a phosphor that is excited by blue light as excitation light emitted from the light-emitting element 13 to emit fluorescence. The fluorescence generated from the phosphor when excited by blue light has a broad green to orange wavelength range covering 480 to 700 nm and has a yellow peak wavelength at 520 to 570 nm.

[0024] The phosphor part 15 is, for example, a ceramic phosphor plate made of an alumina or glass medium (base material) containing yttrium aluminum garnet (YAG:Ce) phosphor particles with cerium (Ce) as an activator.

[0025] Note that the phosphor part 15 is not limited to a phosphor plate including YAG:Ce phosphor particles. For example, a phosphor plate in which YAG, which is the base material of the phosphor particles, serves as the medium may be used. In this case, the phosphor part 15 may be a polycrystal or a single crystal.

[0026] When blue light emitted from the light-emitting element 13 is incident on the phosphor part 15, a part of it directly passes through the phosphor part 15, and a part excites the phosphor, causing the excited phosphor to emit fluorescence.

[0027] Therefore, from the upper surface of the phosphor part 15, the excitation light that has passed through the phosphor part 15 without contributing to the generation of fluorescence and the fluorescence emitted from the phosphor are emitted. As a result, white light in which blue light and yellow fluorescence are mixed is extracted from the upper surface of the phosphor part 15. That is, the upper surface of the phosphor part 15 is the light-emitting surface of the light-emitting device 100.

[0028] [Cover 17] Next, the cover 17 will be described. The cover 17 is a covering member that continuously covers the side surfaces of the light-emitting element 13 and the phosphor part 15 on the support substrate 11. That is, the cover 17 covers the light-emitting element 13 and the phosphor part 15 so as to expose the upper surface of the phosphor part 15.

[0029] In the light-emitting device 100, the cover 17 has a rectangular parallelepiped light-absorbing part 17P whose longitudinal direction extends along two sides 15E that face the up-and-down direction of the phosphor part 15 in FIG. 1. In other words, the two light-absorbing parts 17P are formed so as to face each other with the upper surface of the phosphor part 15 interposed therebetween in a top view.

[0030] The depth of the light-absorbing part 17P from the upper surface of the cover 17 is about 20 μm. In the light-emitting device 100, the light-absorbing part 17P is formed to have a length in the longitudinal direction longer than the length of the side 15E of the phosphor part 15. Also, in the light-emitting device 100, the light-absorbing part 17P and the phosphor part 15 are separated by a distance C as shown in FIG. 2. The distance C is, for example, about 0.1 mm.

[0031] Here, with reference to FIG. 3, the detailed configuration of the cover 17 will be described. FIG. 3 is an enlarged view of part A in FIG. 2.

[0032] In the light-emitting device 100, the cover 17 is made of a resin body in which a plurality of particles are dispersed inside. Specifically, the cover 17 is configured by dispersing titanium dioxide (TiO2) particles having a rutile-type crystal structure in a resin medium having translucency such as a silicone resin or an epoxy resin.

[0033] In the coating 17, the concentration of titanium oxide particles dispersed in the resin medium is, for example, 16 wt% or more. In addition to titanium oxide, zinc oxide (ZnO) may be used as the particles to be dispersed in the resin medium.

[0034] In the coating 17, the titanium oxide particles P1 as the first particles dispersed in the light absorption part 17P have a band gap energy smaller than the energy of light with a wavelength in the visible light region. For example, the band gap energy of the titanium oxide particles P1 is about 1.5 eV.

[0035] Therefore, the titanium oxide particles P1 are more likely to absorb the blue light emitted from the light emitting element 13 and the yellow fluorescence emitted from the phosphor part 15 than other parts of the coating 17. In the coating 17, since the titanium oxide particles P1 are black or gray in appearance, the light absorption part 17P exhibits black or gray as a whole.

[0036] On the other hand, in the coating 17, the titanium oxide particles P2 as the second particles dispersed in the part other than the light absorption part 17P have a band gap energy larger than the energy of light with a wavelength in the visible light region. For example, the band gap energy of the titanium oxide particles P1 is about 3.0 eV. That is, the band gap energy of the titanium oxide particles P2 is larger than that of the titanium oxide particles P1.

[0037] Therefore, the titanium oxide particles P2 scatter without absorbing the blue light emitted from the light emitting element 13 and the yellow fluorescence emitted from the phosphor part 15. Thus, for example, the yellow fluorescence emitted from the phosphor part 15 and reaching the side surface 15S of the phosphor part 15 is reflected into the phosphor part 15 by the coating 17 covering the side surface 15S. In the coating 17, the part other than the light absorption part 17P exhibits white as a whole because the titanium oxide particles P2 are white in appearance.

[0038] In the light-emitting device 100, since the light absorption part 17P absorbs the blue light emitted from the light-emitting element 13 and the yellow fluorescence emitted from the phosphor part 15 more than other parts of the cover 17, when light is emitted from the upper surface of the phosphor part 15, stray light is less likely to occur around the upper surface.

[0039] That is, in the light-emitting device 100, when the light-emitting device 100 is viewed from above, the light and dark of the light are clearly separated by the upper surface of the phosphor part 15 and the light absorption part 17P. Therefore, according to the light-emitting device 100 of the present embodiment, the contrast of the light taken out as a whole can be kept high.

[0040] In the light-emitting device 100, since the light-emitting element 13 is flip-chip mounted on the support substrate 11, the semiconductor structure layer 21 including the active layer is formed on the support substrate 11 side rather than on the light-transmitting substrate 22 side. In the light-emitting device 100, the thickness of the light-transmitting substrate 22 in the vertical direction is thicker than the thickness of the semiconductor structure layer 21.

[0041] Thereby, for example, when forming the light absorption part 17P using laser light during the manufacture of the light-emitting device 100, the distance from the position irradiated with the laser light to the semiconductor structure layer 21 can be increased, and the light-emitting element 13 can be prevented from malfunctioning.

[0042] In the light-emitting device 100, the light absorption part 17P and the phosphor part 15 are separated by a distance C, and the light absorption part 17P does not contact the side surface 15S of the phosphor part 15. Thereby, the light reaching the side surface 15S of the phosphor part 15 is not absorbed by the light absorption part 17P, and it is possible to prevent a decrease in unnecessary light output of the light-emitting device 100.

[0043] In addition, in the light-emitting device 100, as described above, the lower surface of the phosphor layer 15 is 15% larger than the upper surface of the light-emitting element 13, and the light absorption portion 17P is formed separately from the phosphor layer 15. As a result, when forming the light absorption portion 17P by, for example, laser light during the manufacture of the light-emitting device 100, the laser light is irradiated from a distance from the light-emitting element 13, so that it is possible to suppress damage to the light-emitting element 13. Note that the size of the phosphor layer 15 is not limited to 15%, and damage to the light-emitting element 13 by laser light can be suppressed as long as it is 15% or more.

[0044] [Manufacturing Method of Light-Emitting Device 100] Here, with reference to FIGS. 4 to 6, the manufacturing method of the light-emitting device 100 according to the present embodiment will be described. Each of FIGS. 4 to 6 is a cross-sectional view showing the manufacturing process of the light-emitting device 100.

[0045] First, the light-emitting element 13 is flip-chip mounted on the substrate 11M that is the base material of the support substrate 11 (step S1: element mounting step). Specifically, the p-electrode 23 and the n-electrode 24 of the light-emitting element 13 are mounted on the upper surface of the support substrate 11 via a conductive bonding member (not shown), and can be mounted by performing a reflow process.

[0046] Next, as shown in FIG. 4, the phosphor layer 15 is adhered to each upper surface of the light-emitting elements 13 (step S2: phosphor layer adhesion step). Specifically, an adhesive member 26 is applied to the upper surface of the translucent substrate 22 of the light-emitting element 13, and the phosphor layer 15 is disposed thereon and heat-cured to adhere the light-emitting element 13 and the phosphor layer 15.

[0047] Next, as shown in FIG. 5, the coating body 17M that is the base material of the coating body 17 in which titanium oxide particles are dispersed is filled on the substrate 11M in an uncured state and heat-cured (step S3: coating body formation step). At this time, the coating body 17M is filled so as to cover the side surfaces of the light-emitting element 13 and the phosphor layer 15 while exposing the upper surface of the phosphor layer 15.

[0048] Next, as shown in FIG. 6, by using a laser light source LS to irradiate a partial area on the upper surface of the cured coating 17M with a laser light LB along the side 15E on the upper surface of the phosphor part 15, a light absorption part 17P is formed (step S4: light absorption part formation step). At this time, the light absorption part 17P is formed at an interval C from the side 15E on the upper surface of the phosphor part 15.

[0049] From the laser light source LS, for example, a laser light LB of ultraviolet rays having a wavelength of 355 nm is emitted at an output of 50 kW / cm 2 . The light absorption part 17P is formed, for example, by scanning the upper surface of the coating 17M with the laser light LB at a speed of 1000 mm / sec.

[0050] In the titanium oxide particles in the coating 17M irradiated with the laser light LB, oxygen atoms on the particle surface are desorbed. That is, in the titanium oxide particles P1 shown in FIG. 3, the ratio of oxygen deficiency on the surface is larger than that of the titanium oxide particles P2. As a result, the band gap energy of the titanium oxide particles P1 becomes smaller than that of the titanium oxide particles P2.

[0051] Finally, each of the light-emitting devices 100 is singulated by cutting the coating 17M on which the light absorption part 17P is formed using a blade-type dicing machine or a laser dicing machine (step S5: singulation step). Thereby, the light-emitting devices 100 shown in FIGS. 1 and 2 are obtained.

[0052] [Suppression of Irradiation Energy Damage to Light-Emitting Element 13] Here, with reference to FIG. 6, suppression of damage to the irradiation energy of the laser light LB to the light-emitting element 13 during the manufacture of the light-emitting device 100 of the present embodiment will be described. As described above, when forming the light absorption part 17P in the coating 17M, the upper surface of the coating 17M is irradiated with the laser light LB at a predetermined output using the laser light source LS.

[0053] At this time, when the laser beam LB is irradiated onto the upper surface of the coating 17M, the energy of the laser beam LB (hereinafter also referred to as irradiation energy) propagates through the coating 17M toward the substrate 11M as indicated by the white arrow in FIG. 6, for example.

[0054] For example, in the light-emitting device 100, when the size of the phosphor portion 15 is equal to or smaller than the size of the light-emitting element 13, that is, when the phosphor portion 15 does not protrude laterally beyond the upper surface of the light-emitting element 13 in a top view, a part of the irradiation energy propagating through the coating 17M may directly affect the light-emitting element 13. Specifically, there is a risk that the light-emitting element 13 may be damaged and malfunction because a part of the irradiation energy propagates through the coating 17M and directly reaches the semiconductor structure layer 21 of the light-emitting element 13.

[0055] In the light-emitting device 100 of the present embodiment, as described above, the size of the lower surface of the phosphor portion 15 is configured to be larger than the upper surface of the light-emitting element 13. Therefore, even if the irradiation energy propagates through the coating 17M, the side surface 15S of the phosphor portion 15 serves as a barrier to block the irradiation energy, making it difficult for the irradiation energy to directly reach the light-emitting element 13. That is, it becomes difficult for the light-emitting element 13 to be damaged by the irradiation energy.

[0056] Also, when forming the light absorption portion 17P, as described above, the laser beam LB is irradiated onto a region spaced apart by a distance C from the side 15E of the upper surface of the phosphor portion 15. As a result, the distance between the light absorption portion 17P and the light-emitting element 13 increases, making it difficult for the irradiation energy to directly reach the light-emitting element 13.

[0057] In addition, in the light-emitting device 100, since the light absorption portion 17P and the phosphor portion 15 are separated by a distance C, it is possible to prevent the coating 17 in contact with the side surface 15S of the phosphor portion 15 from becoming a light absorption portion due to the irradiation energy.

[0058] That is, for example, fluorescence emitted from the phosphor portion 15 and directed toward the side surface 15S can be prevented from being absorbed by the coating 17 in contact with the side surface 15S of the phosphor portion 15. Therefore, according to the light-emitting device 100, it is possible to suppress a decrease in the output of the emitted light due to excessive absorption of light by the coating 17 that has become the light absorption portion.

[0059] Also, in the light-emitting device 100 of the present embodiment, as described above, the light-emitting element 13 is flip-chip mounted on the support substrate 11. Therefore, the distance between the semiconductor structure layer 21 of the light-emitting element 13 and the light absorption portion 17P is increased. As a result, the semiconductor structure layer 21 of the light-emitting element 13 is less likely to be affected by the irradiation energy.

[0060] In this way, during the manufacture of the light-emitting device 100, it is possible to suppress damage to the light-emitting element 13 by the irradiation energy of the laser beam LB during the formation of the light absorption portion 17P. Note that the distance C between the light absorption portion 17P and the phosphor portion 15 is preferably in the range of 0.1 mm to 0.15 mm because stray light is likely to occur if it becomes too long.

[0061] Therefore, according to the light-emitting device 100 of the present embodiment, while achieving high contrast of the light emitted from the light-emitting device 100, it is possible to suppress damage to the light-emitting element 13 by the irradiation energy during the formation of the light absorption portion 17P during the manufacture of the light-emitting device 100.

[0062] In the light-emitting device 100 of the present embodiment, the light absorption portion 17P is also separated from the outer edge of the coating 17, that is, the outer edge of the light-emitting device 100. In other words, the light absorption portion 17P is surrounded by the coating 17 in which the titanium oxide particles P2 are dispersed in a top view.

[0063] In the light-emitting device 100 of the present embodiment, the light absorption part 17P only needs to be separated from the phosphor part 15 when viewed from above. For example, even if a part of the coating 17 in contact with the side surface 15S of the phosphor part 15 is blackened by the irradiation energy of the laser beam LB. That is, it is not necessary for the entire coating 17 in contact with the side surface 15S of the phosphor part 15 to be white.

[0064] In the light-emitting device 100 of the present embodiment, although titanium oxide particles P1 having a smaller bandgap energy than the titanium oxide particles P2 are dispersed in the light absorption part 17P, the bandgap energy of the titanium oxide particles P1 may gradually change in the light absorption part 17P.

[0065] For example, in the light absorption part 17P, the titanium oxide particles P1 may be dispersed so that the area where oxygen deficiency occurs decreases as it goes from the upper surface of the coating 17 toward the support substrate 11. To do this, for example, it can be formed by appropriately changing the irradiation output or irradiation time of the laser beam LB.

[0066] In the light-emitting device 100 of the present embodiment, although the two light absorption parts 17P are formed so as to face each other across the upper surface of the phosphor part 15 in a top view, the present invention is not limited to this, and one light absorption part 17P may be formed only along one side of the upper surface of the phosphor part 15.

[0067] In the light-emitting device 100 of the present embodiment, although the light absorption part 17P extends along the side 15E of the upper surface of the phosphor part 15, the formation mode is not limited to this. For example, a plurality of light absorption parts 17P may be formed at intervals along the side 15E of the upper surface of the phosphor part 15. For example, the light absorption part 17P may be formed intermittently in a top view.

[0068] Also, for example, by intermittently forming the light absorption part 17P around the phosphor part 15, a code having a meaning as an identification number for individually identifying the manufactured light-emitting device 100 or for identifying a model number, type, etc. may be formed. For example, the light absorption part 17P may be formed in the form of a one-dimensional code such as a bar code or a tracer mark (numbers, specific geometric patterns, etc.). Also, the light absorption part 17P may be formed in the form of a two-dimensional code such as a QR code (registered trademark). Thereby, while achieving high contrast of the emitted light, the yield can be improved by having product discrimination ability.

[0069] [Modification example of the light-emitting device 100] Next, with reference to FIG. 7, a modification example of the light-emitting device 100 of Example 1 will be described. FIG. 7 is a cross-sectional view of the light-emitting device 110. The configuration of the light-emitting element 13 of the light-emitting device 110 is different from that of Example 1, and the other points are the same as those of Example 1.

[0070] In the light-emitting device 110 of this modification example, the light-transmitting substrate 28 of the light-emitting element 13 is thinner than the light-transmitting substrate 22 of the light-emitting element 13 of Example 1. For example, the light-transmitting substrate 28 has a thickness about 2 / 3 of that of the light-transmitting substrate 22 of Example 1. This can be manufactured, for example, by thinning one main surface of the light-transmitting substrate 22 by mechanical polishing or chemical polishing. The thickness of the light-emitting element 13 of the light-emitting device 110 in the modification example is, for example, about 0.1 mm.

[0071] In the light-emitting device 110, when using the light-transmitting substrate 28 with such a reduced thickness, the angle connecting the light absorption part 17P and the light-emitting element 13 with respect to the center line CL becomes larger. Also, the thickness of the phosphor part 15 is 1.2 to 2 times the thickness of the light-emitting element 13. Therefore, when the irradiation energy propagates within the covering body 17M, the side surface 15S of the phosphor part 15 becomes a barrier for blocking the irradiation energy, making it more difficult for the irradiation energy to reach the light-emitting element 13 than in the case of Example 1. That is, the light-emitting element 13 becomes less likely to be damaged by the irradiation energy.

[0072] Therefore, according to the light-emitting device 110 of this modified example, while increasing the light intensity, similar to the light-emitting device 100, it is possible to achieve high contrast of the light emitted from the light-emitting device 110 and suppress damage to the light-emitting element 13 caused by the irradiation energy during the formation of the light absorption portion 17P.

Example

[0073] Next, with reference to FIG. 8, the light-emitting device 200 according to Example 2 will be described. FIG. 8 is a top view of the light-emitting device 200. The light-emitting device 200 is different from that of Example 1 in the formation mode of the light absorption portion 31P in the coating body 31, and is the same as that of Example 1 in other respects.

[0074] In the light-emitting device 200 of this example, as shown in FIG. 8, the light absorption portion 31P is continuously formed in the coating body 31 so as to be separated from the phosphor portion 15 and surround the phosphor portion 15. In other words, the light absorption portion 31P is continuously formed in a rectangular shape along each side of the upper surface of the phosphor portion 15 while being separated from the phosphor portion 15.

[0075] According to the light-emitting device 200 of this example, by forming the light absorption portion 31P so as to surround the phosphor portion 15, it is possible to emit light with a higher contrast ratio than the light-emitting device 100 of Example 1. That is, according to the light-emitting device 200 of this example, the brightness and darkness of the emitted light can be made clearer.

[0076] Also, according to the light-emitting device 200 of this example, similar to the light-emitting device 100, the light absorption portion 17P is formed separately from the phosphor portion 15, so it is less likely that the irradiation energy of the laser beam LB reaches the light-emitting element 13 during the formation of the light absorption portion 17P. Therefore, it is possible to suppress damage to the light-emitting element 13 caused by the irradiation energy of the laser beam LB during the formation of the light absorption portion 31P while achieving high contrast of the light emitted from the light-emitting device 200.

[0077] Note that, also in the light-emitting device 200 of this embodiment, the formation mode of the light absorption part 31P is not limited to this. For example, the light absorption part 31P may be formed at intervals along each side of the phosphor part 15, that is, intermittently.

Explanation of reference numerals

[0078] 100, 110, 200 Light-emitting device 11 Support substrate 13 Light-emitting element 15 Phosphor part 17, 31 Coating 17P, 31P Light absorption part 19 Semiconductor structure layer 21, 28 Translucent substrate 23 p electrode 24 n electrode 26 Adhesive member

Claims

1. A substrate, a light-emitting element including a light-emitting layer disposed on the substrate, a phosphor portion disposed on the light-emitting element, including a phosphor that is excited by light emitted from the light-emitting layer to emit fluorescence and has a lower surface area larger than the upper surface area of the light-emitting element, and a covering body disposed on the substrate and continuously covering the side surfaces of the light-emitting element and the phosphor portion, wherein the covering body has a light absorption portion formed in at least a part of a region along the outer edge of the upper surface of the phosphor on the upper surface of the covering body and having a higher light absorption for light having a wavelength in the visible light region than other portions, and in a top view of the phosphor portion, the light absorption portion and the phosphor portion are spaced apart from each other. A light-emitting device characterized by this.

2. The covering body is made of a resin body in which a plurality of particles are dispersed, wherein the plurality of particles include first particles dispersed in the light absorption portion and second particles dispersed in other portions of the covering body other than the light absorption portion and having a larger band gap energy than the first particles. The light-emitting device according to claim 1, characterized by this.

3. Each of the plurality of particles is made of titanium oxide or zinc oxide. The light-emitting device according to claim 2, characterized by this.

4. The phosphor portion has a rectangular upper surface shape, and the light absorption portion extends along at least one side of the upper surface of the phosphor. The light-emitting device according to any one of claims 1 to 3, characterized by this.

5. The light absorption portion is formed so as to face each other with the upper surface of the phosphor sandwiched therebetween in a top view. The light-emitting device according to claim 4, characterized by this.

6. The light absorption portion is continuously formed so as to surround the phosphor portion in a top view. The light-emitting device according to any one of claims 1 to 3, characterized by this.

7. The light absorption portion and the phosphor portion are spaced apart by 0.1 mm or more. The light-emitting device according to any one of claims 1 to 3, characterized by this.

8. The light-emitting element is flip-chip bonded to the substrate. The light-emitting device according to any one of claims 1 to 3, characterized by this.

9. An element mounting step of mounting a light-emitting element on a substrate, a phosphor portion bonding step of bonding a phosphor portion to the light-emitting element, and a covering body forming step of forming a covering body so as to continuously cover the side surfaces of the light-emitting element and the phosphor portion on the substrate, A light absorption part forming step of irradiating a region separated from the outer edge of the phosphor part on the upper surface of the coating with a laser beam having a predetermined intensity to form a light absorption part having higher absorbability for light having a wavelength in the visible light region than other parts of the coating; A method for manufacturing a light-emitting device, comprising the above.

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