Light-emitting device, electronic apparatus, and manufacturing method of the light-emitting device

Abstract

To provide a light-emitting device capable of reducing a manufacturing step.SOLUTION: A light-emitting device contains: a substrate; a first pad to be provided to the substrate; a first electrode to be provided to the first pad; a first lamination body to be provided to the first electrode; an insulation layer to be provided to the side surface of the first lamination body; a first metal layer to be provided to the insulation layer; a second pad to be provided to the substrate, and is isolated from the first pad; a conductive layer to be provided to the second pad; a second lamination body to be provided to the conductive layer; a second metal layer to be provided to the side surface of the second lamination body; and a second electrode to be provided to the side opposite to the substrate of the first and second lamination bodies, and is electrically connected to the second pad via the second metal layer. The first lamination body includes: a first conductive type first semiconductor layer; a second conductive type second semiconductor layer; and a first quantum well layer. The second lamination body includes: a first conductive type third semiconductor layer; a second conductive type fourth semiconductor layer; and a second quantum well layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a light-emitting device, an electronic device, and a method for manufacturing a light-emitting device.

Background Art

[0002] Light-emitting elements such as LEDs (Light Emitting Diodes) are applied to light sources such as display devices.

[0003] For example, Patent Document 1 describes a semiconductor unit including a light-emitting element having a semiconductor layer formed by laminating a first conductivity type layer, an active layer, and a second conductivity type layer in this order from below, a first electrode provided on the lower surface of the first conductivity type layer, and a second electrode provided on the upper surface of the second conductivity type layer. The first electrode is connected to a terminal electrode provided on a substrate via a plating layer. The second electrode is connected to a terminal electrode provided on the substrate via a bump and a connection portion.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the semiconductor unit described in Patent Document 1, since bumps and connection portions are used to electrically connect the second electrode and the terminal electrode, the manufacturing process becomes complicated.

Means for Solving the Problems

[0006] One aspect of the light-emitting device according to the present invention is a substrate, a first pad provided on the substrate, a first electrode provided on the first pad, a first laminate provided on the first electrode, An insulating layer provided on a side surface of the first laminate; A first metal layer provided on the insulating layer; A second pad provided on the substrate and separated from the first pad; A conductive layer provided on the second pad; A second laminate provided on the conductive layer; A second metal layer provided on a side surface of the second laminate; A second electrode provided on a side opposite to the substrate of the first laminate and the second laminate, and electrically connected to the second pad through the second metal layer; comprising; The first laminate includes: A first semiconductor layer of a first conductivity type; A second semiconductor layer of a second conductivity type, provided between the first semiconductor layer and the second electrode and different from the first conductivity type; A first quantum well layer provided between the first semiconductor layer and the second semiconductor layer; and has; The second laminate includes: A third semiconductor layer of the first conductivity type; A fourth semiconductor layer of the second conductivity type, provided between the third semiconductor layer and the second electrode; A second quantum well layer provided between the third semiconductor layer and the fourth semiconductor layer; and has.

[0007] One aspect of the electronic device according to the present invention has: One aspect of the light-emitting device.

[0008] One aspect of the method for manufacturing a light-emitting device according to the present invention includes: A step of forming a first laminate and a second laminate separated from each other on a first substrate; A step of forming a first electrode on the first laminate and a conductive layer on the second laminate; A step of forming an insulating layer on a side surface of the first laminate; A step of forming a first metal layer on the insulating layer and a second metal layer on a side surface of the second laminate; A step of bonding a structure having the first substrate, the first laminate, the second laminate, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with a first pad and a second pad separated from each other, such that the first electrode faces the first pad and the conductive layer faces the second pad; A step of removing the first substrate to expose the first laminate and the second laminate; A step of forming a second electrode on the first laminate and the second laminate; including; The first laminate has a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type, provided between the first semiconductor layer and the second electrode and different from the first conductivity type; a first quantum well layer between the first semiconductor layer and the second semiconductor layer; and has; The second laminate has a third semiconductor layer of the first conductivity type; a fourth semiconductor layer of the second conductivity type, provided between the third semiconductor layer and the second electrode; a second quantum well layer between the third semiconductor layer and the fourth semiconductor layer; and has.

Brief Description of Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention described in the claims. Also, not all of the configurations described below are essential constituent elements of the present invention.

[0011] 1. Light-Emitting Device 1.1. Configuration First, the light-emitting device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing the light-emitting device 100 according to the present embodiment. FIG. 2 is a plan view schematically showing the light-emitting device 100 according to the present embodiment. Note that FIG. 1 is a cross-sectional view taken along line I-I of FIG. 2.

[0012] As shown in FIGS. 1 and 2, the light-emitting device 100 includes, for example, a driving substrate 10, a first pad 12, a second pad 14, a light-emitting element 102, a connection portion 104, a protective layer 60, a third metal layer 70, and a light-transmitting member 80.

[0013] For convenience, in FIG. 2, illustration of members other than the first laminate 20, the first electrode 30, the first contact hole 42, the first metal layer 50, the second laminate 21 of the connection portion 104, the conductive layer 31, the second metal layer 51, and the light-transmitting member 80 of the light-emitting element 102 is omitted. The same applies to FIG. 15 described later.

[0014] The driving substrate 10 is, for example, a silicon substrate. The driving substrate 10 is provided with, for example, a driving circuit for driving the light-emitting element 102. The driving circuit is, for example, composed of an IC (Integrated Circuit).

[0015] As shown in FIG. 1, the first pad 12 and the second pad 14 are provided on the driving substrate 10. The first pad 12 and the second pad 14 are separated from each other. The first pad 12 and the second pad 14 may constitute a driving circuit. The first pad 12 and the second pad 14 have, for example, a first layer 16 and a second layer 18. The first layer 16 is provided on the driving substrate 10. The first layer 16 uses, for example, a laminate in the order of a Ti layer and a Pt layer from the driving substrate 10 side. The second layer 18 is provided on the first layer 16. The second layer 18 is, for example, an Au layer, an Al layer, or a Cu layer.

[0016] The light-emitting element 102 is provided on the first pad 12. The light-emitting element 102 is, for example, junction-down mounted. The light-emitting element 102 is, for example, an LED. The light-emitting element 102 has, for example, a first laminate 20, a first electrode 30, a second electrode 32, an insulating layer 40, and a first metal layer 50.

[0017] The first laminate 20 is provided between the first electrode 30 and the second electrode 32. The first laminate 20 is provided on the first electrode 30. Here, FIG. 3 is an enlarged view of FIG. 1 showing the vicinity of the first laminate 20 and the second laminate 21. As shown in FIG. 3, the first laminate 20 has a first tapered portion 2 having a tapered shape in which the width increases from the first electrode 30 side toward the second electrode 32 side. The width of the first tapered portion 2 gradually increases from the first electrode 30 side toward the second electrode 32 side. In the illustrated example, the shape of the first tapered portion 2 is a trapezoid. Note that the width is the size in a direction orthogonal to the lamination direction (hereinafter, also simply referred to as the “lamination direction”) of the first semiconductor layer 22 and the first quantum well layer 24 of the first laminate 20. The first side surface 4 of the first tapered portion 2 is inclined with respect to the lamination direction. The first side surface 4 of the first tapered portion 2 constitutes a side surface of the first laminate 20. The first laminate 20 has a first semiconductor layer 22, a first quantum well layer 24, and a second semiconductor layer 26. The first semiconductor layer 22, the first quantum well layer 24, and the second semiconductor layer 26 constitute the first tapered portion 2. The first semiconductor layer 22, the first quantum well layer 24, and the second semiconductor layer 26 are, for example, group III nitride semiconductors and have a wurtzite crystal structure.

[0018] The first semiconductor layer 22 is provided on the first electrode 30. The first semiconductor layer 22 is provided between the first electrode 30 and the first quantum well layer 24. The first semiconductor layer 22 has a first conductivity type. The first semiconductor layer 22 is, for example, a p-type GaN layer doped with Mg.

[0019]

[0020] ​The first quantum well layer 24 is provided on the first semiconductor layer 22. The first quantum well layer 24 is provided between the first semiconductor layer 22 and the second semiconductor layer 26. The first quantum well layer 24 has an i-type conductivity type that is not intentionally doped with impurities. The first quantum well layer 24 generates light when current is injected. The first quantum well layer 24 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The first quantum well layer 24 has a MQW (Multiple Quantum Well) structure composed of a well layer and a barrier layer.

[0021] Note that the number of well layers and barrier layers constituting the first quantum well layer 24 is not particularly limited. For example, only one well layer may be provided, and in this case, the first quantum well layer 24 has a SQW (Single Quantum Well) structure.

[0022] The second semiconductor layer 26 is provided on the first quantum well layer 24. The second semiconductor layer 26 is provided between the first quantum well layer 24 and the second electrode 32. The second semiconductor layer 26 is provided between the first semiconductor layer 22 and the second electrode 32. In the illustrated example, the size of the second semiconductor layer 26 in the stacking direction is larger than the size of the first semiconductor layer 22 in the stacking direction. The second semiconductor layer 26 has a second conductivity type different from the first conductivity type. The second semiconductor layer 26 is, for example, an n-type GaN layer doped with Si.

[0023] The second semiconductor layer 26 has a contact surface 28 that contacts the second electrode 32. For example, a plurality of convex portions 29 are provided on the contact surface 28. The plurality of convex portions 29 are provided, for example, periodically. The height of the convex portion 29 is, for example, 400 nm or more. The distance between the tips of adjacent convex portions 29 is, for example, 230 nm or less. The plurality of convex portions 29 may form a moth-eye structure. In the illustrated example, the first laminate 20 is composed of the first tapered portion 2 and the plurality of convex portions 29. The plurality of convex portions 29 can gently change the refractive index at the interface between the second semiconductor layer 26 and the second electrode 32 in the direction from the second semiconductor layer 26 toward the second electrode 32. Thereby, the light reflected at the interface between the second semiconductor layer 26 and the second electrode 32 can be reduced. Although not shown, the plurality of convex portions 29 may be provided randomly.

[0024] In the light-emitting element 102, a pin diode is formed by a p-type first semiconductor layer 22, an i-type first quantum well layer 24, and an n-type second semiconductor layer 26. In the light-emitting element 102, when a forward bias voltage of the pin diode is applied between the first electrode 30 and the second electrode 32, a current is injected into the first quantum well layer 24, and recombination of electrons and holes occurs in the first quantum well layer 24. Due to this recombination, the first quantum well layer 24 generates light.

[0025] The first electrode 30 is provided on the first pad 12. The first electrode 30 is provided between the driving substrate 10 and the first semiconductor layer 22. The first electrode 30 is electrically connected to the first semiconductor layer 22. The first semiconductor layer 22 may be in ohmic contact with the first electrode 30. As the first electrode 30, for example, a structure laminated in the order of a Pd layer, a Pt layer, and an Au layer from the side of the first semiconductor layer 22 is used.

[0026] The first electrode 30 is one of the electrodes for injecting current into the first quantum well layer 24. For example, a potential of a data signal is applied to the first electrode 30. The first electrode 30 reflects the light generated in the first quantum well layer 24 toward the second electrode 32 side.

[0027] The second electrode 32 is provided on the side opposite to the driving substrate 10 of the first laminate 20 and the second laminate 21. The second electrode 32 is provided on the second semiconductor layer 26 of the first laminate 20 and on the fourth semiconductor layer 27 of the second laminate 21. The second electrode 32 is disposed opposite to the driving substrate 10. The second electrode 32 is electrically connected to the second semiconductor layer 26. The second semiconductor layer 26 may be in ohmic contact with the second electrode 32. The second electrode 32 has translucency. Specifically, the second electrode 32 transmits the light generated in the first quantum well layer 24. The light generated in the first quantum well layer 24 is emitted from the side of the second electrode 32. The material of the second electrode 32 is, for example, ITO (Indium Tin Oxide).

[0028] The second electrode 32 is the other electrode for injecting current into the first quantum well layer 24. For example, a fixed potential is applied to the second electrode 32. A ground potential may be applied to the second electrode 32.

[0029] The insulating layer 40 is provided on the first side surface 4 of the first laminate 20. The insulating layer 40 is provided on the entire surface of the first side surface 4. In the illustrated example, the insulating layer 40 is further provided on a part of the lower surface of the second electrode 32 and a part of the lower surface of the first electrode 30. The insulating layer 40 surrounds the first laminate 20 in a plan view. In other words, the insulating layer 40 surrounds the first laminate 20 when viewed from the stacking direction. The insulating layer 40 has translucency. Specifically, the insulating layer 40 transmits the light generated in the first quantum well layer 24. The insulating layer 40 is, for example, a SiO2 layer.

[0030] A first contact hole 42 is formed in the insulating layer 40. In the example shown in FIG. 2, the planar shape of the first contact hole 42 is circular. The first contact hole 42 overlaps the first electrode 30 in a plan view.

[0031] As shown in FIG. 3, the first metal layer 50 is provided on the insulating layer 40. The first metal layer 50 is provided from the portion of the insulating layer 40 provided on the lower surface of the first electrode 30 to the portion provided on the lower surface of the second electrode 32. The first metal layer 50 is further provided in the first contact hole 42. The first metal layer 50 is electrically separated from the second electrode 32 by the insulating layer 40. The first metal layer 50 surrounds, for example, the first laminate 20 in plan view.

[0032] The first metal layer 50 is connected to the first electrode 30. The first metal layer 50 is further connected to the first pad 12. The first metal layer 50 may be eutectically bonded to the first pad 12. The first metal layer 50 may be Au-Au bonded, Al-Al bonded, or Cu-Cu bonded to the first pad 12. The first pad 12 is electrically connected to the first electrode 30 via the first metal layer 50. The first metal layer 50 is, for example, an Au layer, an Al layer, or a Cu layer. The first metal layer 50 reflects the light generated in the first quantum well layer 24 toward the first laminate 20.

[0033] The connection portion 104 is provided on the second pad 14. The connection portion 104 is provided between the second pad 14 and the second electrode 32. The connection portion 104 connects the second pad 14 and the second electrode 32. The connection portion 104 has, for example, the second laminate 21, the conductive layer 31, and the second metal layer 51.

[0034] The second laminate 21 is provided between the conductive layer 31 and the second electrode 32. The second laminate 21 is provided on the conductive layer 31. The second laminate 21 is separated from the first laminate 20. The shape of the second laminate 21 is, for example, the same as the shape of the first laminate 20. The second laminate 21 has the second tapered portion 3. The second side surface 5 of the second tapered portion 3 constitutes the side surface of the second laminate 21.

[0035] The second laminate 21 has a third semiconductor layer 23, a second quantum well layer 25, and a fourth semiconductor layer 27. The third semiconductor layer 23, the second quantum well layer 25, and the fourth semiconductor layer 27 constitute the second tapered portion 3.

[0036] The third semiconductor layer 23 is provided on the conductive layer 31. The third semiconductor layer 23 is provided between the conductive layer 31 and the second quantum well layer 25. The thickness of the third semiconductor layer 23 is, for example, the same as the thickness of the first semiconductor layer 22. The material of the third semiconductor layer 23 is, for example, the same as the material of the first semiconductor layer 22.

[0037] The second quantum well layer 25 is provided on the third semiconductor layer 23. The second quantum well layer 25 is provided between the third semiconductor layer 23 and the fourth semiconductor layer 27. The thickness of the second quantum well layer 25 is, for example, the same as the thickness of the first quantum well layer 24. The material of the second quantum well layer 25 is, for example, the same as the material of the first quantum well layer 24. In the connection portion 104, the third semiconductor layer 23 and the fourth semiconductor layer 27 are short-circuited by the second metal layer 51. Therefore, light is not generated in the second quantum well layer 25.

[0038] The fourth semiconductor layer 27 is provided on the second quantum well layer 25. The fourth semiconductor layer 27 is provided between the second quantum well layer 25 and the second electrode 32. The fourth semiconductor layer 27 is provided between the third semiconductor layer 23 and the second electrode 32. The thickness of the fourth semiconductor layer 27 is, for example, the same as the thickness of the second semiconductor layer 26. The material of the fourth semiconductor layer 27 is, for example, the same as the material of the second semiconductor layer 26. The fourth semiconductor layer 27 has, for example, a plurality of convex portions 29.

[0039] The conductive layer 31 is provided on the second pad 14. The conductive layer 31 is provided between the driving substrate 10 and the third semiconductor layer 23. The thickness of the conductive layer 31 is, for example, the same as the thickness of the first electrode 30. The material of the conductive layer 31 is, for example, the same as the material of the first electrode 30.

[0040] The second metal layer 51 is provided on the second side surface 5 of the second laminate 21. The second metal layer 51 is provided on the entire surface of the second side surface 5. In the illustrated example, the second metal layer 51 is further provided on a part of the lower surface of the second electrode 32 and on the entire lower surface of the conductive layer 31. The second metal layer 51 surrounds the second laminate 21, for example, in a plan view.

[0041] The second metal layer 51 is connected to the conductive layer 31. The second metal layer 51 is further connected to the second pad 14. The second metal layer 51 may be eutectically bonded to the second pad 14. The second metal layer 51 may be Au-Au bonded, Al-Al bonded, or Cu-Cu bonded to the second pad 14. The second metal layer 51 is further connected to the second electrode 32. The thickness of the second metal layer 51 is, for example, the same as the thickness of the first metal layer 50. The material of the second metal layer 51 is, for example, the same as the material of the first metal layer 50. The second electrode 32 is electrically connected to the second pad 14 via the second metal layer 51. The second electrode 32 is provided on the side opposite to the drive substrate 10 of the first laminate 20 and the second laminate 21.

[0042] Note that if the second metal layer 51 can short-circuit the third semiconductor layer 23 and the fourth semiconductor layer 27, it does not have to be provided on the entire surface of the second side surface 5 of the second laminate 21. Although not shown, the second metal layer 51 may be provided only in a partial region including the side surface of the second quantum well layer 25. In this case, the second electrode 32 is electrically connected to the second pad 14 via the fourth semiconductor layer 27, the second metal layer 51, the third semiconductor layer 23, and the conductive layer 31.

[0043] However, considering the voltage drop, as shown in FIG. 3, it is preferable that the second metal layer 51 is provided on a part of the lower surface of the second electrode 32, on the entire surface of the second side surface 5, and on the entire lower surface of the conductive layer 31 to electrically connect the second pad 14 and the second electrode 32.

[0044] As shown in FIG. 1, the protective layer 60 is provided between the driving substrate 10 and the second electrode 32. The protective layer 60 surrounds, for example, the first laminate 20 and the second laminate 21 in a plan view. The protective layer 60 is provided between the first laminate 20 and the second laminate 21. In the illustrated example, the protective layer 60 is separated from the driving substrate 10 with a gap therebetween. The protective layer 60 is, for example, a SiO2 layer. The protective layer 60 protects the first laminate 20 from foreign substances and the like. The protective layer 60 can further reduce the possibility of disconnection of the second electrode 32.

[0045] As shown in FIG. 3, a second contact hole 62 and a third contact hole 64 are formed in the protective layer 60. The second contact hole 62 overlaps with the first metal layer 50 in a plan view. In the illustrated example, the second layer 18 of the first pad 12 is provided in the second contact hole 62. The third contact hole 64 overlaps with the second metal layer 51 in a plan view. In the illustrated example, the second layer 18 of the second pad 14 is provided in the third contact hole 64.

[0046] As shown in FIG. 1, the third metal layer 70 is provided on the side of the second electrode 32 opposite to the driving substrate 10. In the illustrated example, the third metal layer 70 is provided on the second electrode 32 via an adhesion layer 72. The adhesion layer 72 is, for example, a TiN layer. The adhesion layer 72 improves the adhesion between the second electrode 32 and the third metal layer 70. The third metal layer 70 does not overlap with, for example, the first laminate 20 in a plan view. The third metal layer 70 is, for example, an Al layer.

[0047] The third metal layer 70 has a reflective surface 74. The reflective surface 74 is the side surface of the third metal layer 70. In the illustrated example, the reflective surface 74 is located on the extension of the first side surface 4 of the first tapered portion 2. The inclination of the reflective surface 74 with respect to the lamination direction is, for example, the same as the inclination of the first side surface 4 with respect to the lamination direction. The reflective surface 74 reflects the light generated in the first quantum well layer 24 toward the light transmissive member 80 side.

[0048] The light-transmitting member 80 is provided on the side opposite to the driving substrate 10 of the second electrode 32. The light-transmitting member 80 is provided on the adhesion layer 72. The light-transmitting member 80 is in contact with the reflecting surface 74 of the third metal layer 70. The third metal layer 70 surrounds the light-transmitting member 80, for example, in a plan view. The material of the light-transmitting member 80 is, for example, SiON. The light-transmitting member 80 transmits the light that has passed through the second electrode 32. The light-transmitting member 80 transmits the light reflected by the reflecting surface 74.

[0049] The light-transmitting member 80 has an emission surface 82 that emits the light generated in the first quantum well layer 24. The emission surface 82 is the surface of the light-transmitting member 80 on the side opposite to the driving substrate 10. The emission surface 82 is, for example, a curved surface. In the illustrated example, the emission surface 82 is a convex surface.

[0050] In the above description, an example in which the first conductivity type is p-type and the second conductivity type is n-type has been described, but the first conductivity type may be n-type and the second conductivity type may be p-type.

[0051] Also, in the above description, an example in which there is a gap between the driving substrate 10 and the protective layer 60 has been described, but the driving substrate 10 and the protective layer 60 may be in contact with each other. In this case, the first pad 12 and the second pad 14 may be embedded in the driving substrate 10. The first pad 12 and the light-emitting element 102 may be connected to each other by hybrid bonding. The second pad 14 and the connection portion 104 may be connected to each other by hybrid bonding.

[0052] Also, in the above description, an example in which the first metal layer 50 is provided in the first contact hole 42 has been described, but if the first pad 12 is electrically connected to the first electrode 30, the first pad 12 may be provided in the first contact hole 42 instead of the first metal layer 50.

[0053] In the above description, the InGaN-based first quantum well layer 24 has been described. However, as the first quantum well layer 24, various material systems capable of emitting light by injecting current can be used according to the wavelength of the emitted light. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based can be used.

[0054] 1.2. Operational Effects In the light-emitting device 100, it includes a driving substrate 10, a first pad 12 provided on the driving substrate 10, a first electrode 30 provided on the first pad 12, a first laminate 20 provided on the first electrode 30, an insulating layer 40 provided on the first side surface 4 of the first laminate 20, and a first metal layer 50 provided on the insulating layer 40. Further, the light-emitting device 100 includes a second pad 14 provided on the driving substrate 10 and separated from the first pad 12, a conductive layer 31 provided on the second pad 14, a second laminate 21 provided on the conductive layer 31, and a second metal layer 51 provided on the second side surface 5 of the second laminate 21. Further, the light-emitting device 100 includes a second electrode 32 provided on the side opposite to the driving substrate 10 of the first laminate 20 and the second laminate 21 and electrically connected to the second pad 14 via the second metal layer 51.

[0055] Therefore, in the light-emitting device 100, the first laminate 20 and the second laminate 21 can be formed in the same process, the first electrode 30 and the conductive layer 31 can be formed in the same process, and the first metal layer 50 and the second metal layer 51 can be formed in the same process. As a result, it is not necessary to add a separate manufacturing process for the electrical connection between the second electrode 32 and the second pad 14. Therefore, for example, the manufacturing process can be shortened compared to the case where the second electrode and the second pad are electrically connected by a pump or the like. Further, the manufacturing cost can be reduced.

[0056] In the light-emitting device 100, a fixed potential is applied to the second electrode 32. Therefore, in the light-emitting device 100, the amount of current injected into the first quantum well layer 24 can be adjusted according to the potential of the first electrode 30.

[0057] In the light emitting device 100, the first stack 20 has a first tapered section 2 whose width increases from the first electrode 30 side toward the second electrode 32 side. Therefore, in the light emitting device 100, the first side surface 4 of the first tapered section 2 can reflect light generated in the first quantum well layer 24 toward the second electrode 32 side.

[0058] In the light emitting device 100, the second electrode 32 is provided on the opposite side of the driving substrate 10, and the first quantum well The light emitting device 100 includes a third metal layer 70 having a reflective surface 74 that reflects light generated in the light emitting layer 24, and the reflective surface 74 is located on an extension of the first side surface 4 of the first tapered portion 2. Therefore, the light emitting device 100 can emit light with a narrower radiation angle while suppressing leakage of light transmitted through the second electrode 32 to the outside.

[0059] The light emitting device 100 includes a light-transmitting member 80 that is provided on the side of the second electrode 32 opposite to the first stack 20 and in contact with the reflective surface 74. Therefore, in the light emitting device 100, the light that has passed through the light-transmitting member 80 and is incident on the reflective surface 74 can be more reliably reflected toward the light-transmitting member 80 at the reflective surface 74.

[0060] In the light emitting device 100, the light emitting surface 82 of the light-transmitting member 80 opposite to the driving substrate 10 is a curved surface. Therefore, in the light emitting device 100, the light-transmitting member 80 can function as a lens.

[0061] In the light emitting device 100, the insulating layer 40 is light transmissive. Therefore, in the light emitting device 100, even if the light generated in the first quantum well layer 24 passes through the light transmissive insulating layer 40, the first metal layer 50 can reflect the light that has passed through the insulating layer 40 toward the first stack 20.

[0062] 2. Manufacturing method of light-emitting device Next, a method for manufacturing the light emitting device 100 according to this embodiment will be described with reference to the drawings. Fig. 4 is a flowchart for explaining the method for manufacturing the light emitting device 100 according to this embodiment. Figs. 5 to 14 are cross-sectional views that typically show the manufacturing process of the light emitting device 100 according to this embodiment.

[0063] As shown in FIGS. 4 and 5, semiconductor layers 110, 112, and 114 are epitaxially grown on a growth substrate 90 in this order (step S1). Examples of the method of epitaxial growth include the MOCVD (Metal Organic Chemical Vapor Deposition) method and the MBE (Molecular Beam Epitaxy) method.

[0064] The growth substrate 90 is a substrate for epitaxially growing the semiconductor layers 110, 112, and 114. The growth substrate 90 includes, for example, a support substrate 92 and a buffer layer 94 provided on the support substrate 92. The support substrate 92 is, for example, a silicon substrate or a sapphire substrate. The buffer layer 94 is, for example, a GaN layer.

[0065] Next, a conductive layer 116 is formed on the semiconductor layer 114 (step S2). The conductive layer 116 is formed, for example, by a vacuum evaporation method, a sputtering method, or a CVD (Chemical Vapor Deposition) method.

[0066] As shown in FIG. 6, the conductive layer 116 and the semiconductor layers 110, 112, and 114 are patterned (step S3). The patterning is performed, for example, by photolithography and dry etching. The semiconductor layer 110 is patterned to become a second semiconductor layer 26 and a fourth semiconductor layer 27. The semiconductor layer 112 is patterned to become a first quantum well layer 24 and a second quantum well layer 25. The semiconductor layer 114 is patterned to become a first semiconductor layer 22 and a third semiconductor layer 23. The conductive layer 116 is patterned to become a first electrode 30 and a conductive layer 31.

[0067] By this step, a first laminate 20 and a second laminate 21 separated from each other can be formed on the growth substrate 90. Further, a first electrode 30 can be formed on the first laminate 20, and a conductive layer 31 can be formed on the second laminate 21.

[0068] As shown in FIG. 7, an insulating layer 40 is formed on the first side surface 4 of the first laminate 20 (step S4). The insulating layer 40 is formed, for example, by a CVD method or an ALD (Atomic Layer Deposition) method. Specifically, after forming the insulating layer 40 on the entire surface, the insulating layer 40 is patterned to remove the insulating layer 40 formed on the second side surface 5 of the second laminate 21 and the insulating layer 40 formed on the upper surface of the conductive layer 31. Further, a first contact hole 42 is formed by patterning the insulating layer 40. The patterning is performed, for example, by photolithography and etching. Note that the insulating layer 40 may not be formed on the second side surface 5 of the second laminate 21 by a lift-off method.

[0069] As shown in FIG. 8, a metal layer 118 is formed on the insulating layer 40 and the second side surface 5 of the second laminate 21 (step S5). Specifically, the metal layer 118 is formed on the entire surface. The metal layer 118 is formed, for example, by a vacuum evaporation method or a sputtering method.

[0070] As shown in FIG. 9, a resist layer 120 having a predetermined shape is formed so as to cover the first laminate 20 and the second laminate 21 (step S6). The resist layer 120 is formed by coating, exposure, and development.

[0071] As shown in FIG. 10, the metal layer 118 and the insulating layer 40 are dry-etched using the resist layer 120 as a mask (step S7). The metal layer 118 is patterned to become a first metal layer 50 and a second metal layer 51. By this step, the first metal layer 50 can be formed on the insulating layer 40, and the second metal layer 51 can be formed on the second side surface 5 of the second laminate 21.

[0072] As shown in FIG. 11, the resist layer 120 is removed (step S8). The method for removing the resist layer 120 is not particularly limited.

[0073] As shown in FIG. 12, a protective layer 60 is formed so as to cover the first laminate 20 and the second laminate 21 (step S9). The protective layer 60 is formed, for example, by a CVD method or a spin coating method, and the protective layer 60 is planarized using a CMP (Chemical Mechanical Polishing) apparatus or the like. Thereafter, the protective layer 60 is patterned to form a second contact hole 62 and a third contact hole 64. The patterning is performed, for example, by photolithography and etching.

[0074] By this step, a structure 106 having the first laminate 20, the second laminate 21, the first electrode 30, the conductive layer 31, the insulating layer 40, the first metal layer 50, the second metal layer 51, the protective layer 60, and the growth substrate 90 can be formed.

[0075] As shown in FIG. 13, the structure 106 is joined to a drive substrate 10 provided with first and second pads 12 and 14 spaced apart from each other such that the first electrode 30 faces the first pad 12 and the conductive layer 31 faces the second pad 14 (step S10). Specifically, the structure 106 is junction-down mounted with the first electrode 30 and the conductive layer 31 facing the drive substrate 10 side. In the illustrated example, the first electrode 30 faces the first pad 12 via the first metal layer 50. The conductive layer 31 faces the second pad 14 via the second metal layer 51. Examples of the joining include eutectic bonding, Au-Au bonding, Al-Al bonding, Cu-Cu bonding, and soldering. The drive circuit of the drive substrate 10 is formed by ion implantation of impurities into a silicon substrate, formation of a silicon oxide layer, and patterning of the pads 12 and 14.

[0076] As shown in FIG. 14, the growth substrate 90 is removed (step S11). The removal of the growth substrate 90 is performed, for example, by etching, CMP, or the like. Thereby, the first laminate 20 and the second laminate 21 are exposed. Specifically, the second semiconductor layer 26 and the fourth semiconductor layer 27 are exposed.

[0077] Next, the second semiconductor layer 26 and the fourth semiconductor layer 27 are patterned to form a plurality of convex portions 29 (step S12). The patterning is performed, for example, by photolithography and etching.

[0078] As shown in FIG. 1, a second electrode 32 is formed on the first laminate 20 and the second laminate 21 (step S13). Specifically, the second electrode 32 is formed on the second semiconductor layer 26 and the fourth semiconductor layer 27. The second electrode 32 is formed, for example, by a vacuum evaporation method or a sputtering method.

[0079] Next, a third metal layer 70 is formed on the second electrode 32 via an adhesion layer 72 (step S14). The third metal layer 70 and the adhesion layer 72 are formed, for example, by a sputtering method, a CVD method, a vacuum evaporation method, or an electroplating method.

[0080] Next, a light-transmitting member 80 is formed on the second electrode 32 (step S15). The light-transmitting member 80 is formed, for example, by a CVD method. Thereafter, the light-transmitting member 80 is patterned to form an emission surface 82 that is a curved surface. The patterning is performed, for example, by photolithography and etching.

[0081] Through the above steps, the light-emitting device 100 can be manufactured.

[0082] In the manufacturing method of the light-emitting device 100, a step of forming a first laminate 20 and a second laminate 21 spaced apart from each other on a growth substrate 90 as a first substrate; a step of forming a first electrode 30 on the first laminate 20 and forming a conductive layer 31 on the second laminate 21; a step of forming an insulating layer 40 on a first side surface 4 of the first laminate 20; a step of forming a first metal layer 50 on the insulating layer 40 and forming a second metal layer 51 on a second side surface 5 of the second laminate 21; a step of bonding a structure 106 to a driving substrate 10 as a second substrate provided with a first pad 12 and a second pad 14 spaced apart from each other such that the first electrode 30 faces the first pad 12 and the conductive layer 31 faces the second pad 14; a step of removing the growth substrate 90 to expose the first laminate 20 and the second laminate 21; and a step of forming a second electrode 32 on the first laminate 20 and the second laminate 21.

[0083] Therefore, in the manufacturing method of the light-emitting device 100, since it is not necessary to separately add a manufacturing process for the electrical connection between the second electrode 32 and the second pad 14, the manufacturing process can be shortened.

[0084] 3. Modification Example of Light-Emitting Device Next, a light-emitting device according to a modification example of the present embodiment will be described with reference to the drawings. FIG. 15 is a plan view schematically showing a light-emitting device 200 according to a modification example of the present embodiment.

[0085] Hereinafter, in the light-emitting device 200 according to the modification example of the present embodiment, members having the same functions as those of the members of the light-emitting device 100 according to the above-described present embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0086] In the light-emitting device 100, as shown in FIG. 2, only one light-emitting element 102 was provided. Only one connection portion 104 was provided.

[0087] On the other hand, in the light-emitting device 200, as shown in FIG. 15, a plurality of light-emitting elements 102 are provided. A plurality of connection portions 104 are provided.

[0088] The plurality of light-emitting elements 102 are arranged, for example, in a matrix. In the illustrated example, nine light-emitting elements 102 are provided, but the number thereof is not particularly limited. Although not shown, in the plurality of light-emitting elements 102, the second electrodes 32 are continuous with each other. In the plurality of light-emitting elements 102, the second electrodes 32 are provided integrally. A plurality of first pads 12 are provided corresponding to the plurality of light-emitting elements 102. A plurality of light-transmitting members 80 are provided corresponding to the plurality of light-emitting elements 102. The plurality of light-transmitting members 80 may constitute a microlens array.

[0089] The second laminate 21 of the connection portion 104 is provided between the first laminate 20 of one of the adjacent light-emitting elements 102 and the first laminate 20 of the other light-emitting element 102 in a plan view. In the illustrated example, four connection portions 104 are provided, but the number thereof is not particularly limited. For example, light-emitting elements 102 are provided at the four corners of one connection portion 104. Although not shown, a plurality of second pads 14 are provided corresponding to the plurality of connection portions 104.

[0090] In the light-emitting device 200, a plurality of light-emitting elements 102 having the first laminate 20, the insulating layer 40, and the first metal layer 50 are provided, and the second laminate 21 is provided between the first laminate 20 of one of the adjacent light-emitting elements 102 and the first laminate 20 of the other light-emitting element 102 in a plan view. Therefore, in the light-emitting device 200, it is not necessary to separately provide a space for forming the second laminate 21. Thereby, miniaturization can be achieved.

[0091] 4. Projector Next, a projector as an electronic device according to the present embodiment will be described with reference to the drawings. FIG. 16 is a diagram schematically showing a projector 700 according to the present embodiment.

[0092] The projector 700 has, for example, a light-emitting device 200 as a light source.

[0093] The projector 700 includes a housing (not shown) and a red light source 200R, a green light source 200G, and a blue light source 200B that are provided inside the housing and emit red light, green light, and blue light, respectively. For the sake of simplicity, in FIG. 16, the red light source 200R, the green light source 200G, and the blue light source 200B are shown in a simplified manner.

[0094] The projector 700 further includes, for example, a first optical element 702R, a second optical element 702G, a third optical element 702B, a first light modulation device 704R, a second light modulation device 704G, a third light modulation device 704B, and a projection device 708 that are provided inside the housing. The first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are, for example, transmissive liquid crystal light valves. The projection device 708 is, for example, a projection lens.

[0095] The light emitted from the red light source 200R enters the first optical element 702R. The light emitted from the red light source 200R is condensed by the first optical element 702R. Note that the first optical element 702R may have functions other than light condensation. The same applies to the second optical element 702G and the third optical element 702B, which may have functions other than light condensation.

[0096] The light condensed by the first optical element 702R enters the first light modulation device 704R. The first light modulation device 704R modulates the incident light according to the image information. Then, the projection device 708 enlarges the image formed by the first light modulation device 704R and projects it onto the screen 710.

[0097] The light emitted from the green light source 200G enters the second optical element 702G. The light emitted from the green light source 200G is condensed by the second optical element 702G.

[0098] The light collected by the second optical element 702G is incident on the second light modulation device 704G. The second light modulation device 704G modulates the incident light according to the image information. Then, the projection device 708 enlarges the image formed by the second light modulation device 704G and projects it onto the screen 710.

[0099] The light emitted from the blue light source 200B is incident on the third optical element 702B. The light emitted from the blue light source 200B is collected by the third optical element 702B.

[0100] The light collected by the third optical element 702B is incident on the third light modulation device 704B. The third light modulation device 704B modulates the incident light according to the image information. Then, the projection device 708 enlarges the image formed by the third light modulation device 704B and projects it onto the screen 710.

[0101] The projector 700 further has, for example, a cross-dichroic prism 706 that synthesizes the light emitted from the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B and guides it to the projection device 708.

[0102] The three color lights modulated by the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are incident on the cross-dichroic prism 706. The cross-dichroic prism 706 is formed by bonding four right-angled prisms, and dielectric multilayer films that reflect red light and transmit green and blue lights and dielectric multilayer films that reflect blue light and transmit green and red lights are arranged on its inner surface. The three color lights are synthesized by these dielectric multilayer films, and light representing a color image is formed. Then, the synthesized light is projected onto the screen 710 by the projection device 708, and an enlarged image is displayed.

[0103] Note that the red light source 200R, the green light source 200G, and the blue light source 200B may directly form an image without using the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B by controlling the light emitting device 200 according to the image information as pixels of the video. Then, the projection device 708 may project the video formed by the red light source 200R, the green light source 200G, and the blue light source 200B onto the screen 710 after magnifying it.

[0104] Also, in the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than liquid crystal may be used, or a reflective light valve may be used. Examples of such light valves include a reflective liquid crystal light valve and a Digital Micro Mirror Device. The configuration of the projection device is appropriately changed according to the type of the light valve used.

[0105] In addition, the present invention can also be applied to a light source device of a scanning type image display device having a scanning means which is an image forming device for displaying an image of a desired size on a display surface by scanning light from a light source on a screen.

[0106] 5. Display Next, a display as an electronic device according to the present embodiment will be described with reference to the drawings. FIG. 17 is a plan view schematically showing the display 800 according to the present embodiment. FIG. 18 is a cross-sectional view schematically showing the display 800 according to the present embodiment. In FIG. 17, the X-axis and the Y-axis are shown as two axes orthogonal to each other. For the sake of convenience, in FIGS. 17 and 18, the light emitting device 200 is shown in a simplified manner.

[0107] The display 800 has, for example, a light emitting device 200 as a light source.

[0108] The display 800 is a display device that displays images. The images include those that display only character information. The display 800 is a self-emitting display. As shown in FIGS. 17 and 18, the display 800 has, for example, a drive circuit 810, a lens array 820, and a heat sink 830.

[0109] The drive circuit 810 is provided on the drive substrate 10. The drive circuit 810 drives the light-emitting element 102, for example, based on the input image information. The drive substrate 10 has, for example, a display area 812. The drive circuit 810 has a data line drive circuit 814, a scan line drive circuit 816, and a control circuit 818.

[0110] The display area 812 is composed of a plurality of pixels P. In the illustrated example, the pixels P are arranged along the X-axis and the Y-axis.

[0111] Although not shown, a plurality of scan lines and a plurality of data lines are provided on the drive substrate 10. For example, the scan lines extend along the X-axis, and the data lines extend along the Y-axis. The scan lines are connected to the scan line drive circuit 816. The data lines are connected to the data line drive circuit 814. The pixel P is provided corresponding to the intersection of the scan line and the data line.

[0112] One pixel P has, for example, one light-emitting element 102, one light-transmitting member 80, and a pixel circuit (not shown). The pixel circuit has a switching transistor that functions as a switch for the pixel P. The gate of the switching transistor is connected to the scan line, and one of the source or drain is connected to the data line.

[0113] The data line drive circuit 814 and the scan line drive circuit 816 are circuits that control the driving of the light-emitting element 102 that constitutes the pixel P. The control circuit 818 controls the display of the image.

[0114] Image data is supplied to the control circuit 818 from a higher-level circuit. The control circuit 818 supplies various signals based on the image data to the data line driving circuit 814 and the scanning line driving circuit 816.

[0115] When the scanning line driving circuit 816 activates the scanning signal to select the scanning line, the switching transistor of the selected pixel P is turned on. At this time, the data line driving circuit 814 supplies a data signal from the data line to the selected pixel P, causing the light-emitting element 102 of the selected pixel P to emit light according to the data signal.

[0116] The lens array 820 is composed of a plurality of light-transmitting members 80. The heat sink 830 is in contact with the driving substrate 10. The material of the heat sink 830 is, for example, a metal such as copper or aluminum. The heat sink 830 dissipates the heat generated by the light-emitting element 102.

[0117] 6. Head-Mounted Display 6.1. Overall Configuration Next, the head-mounted display as the electronic device according to the present embodiment will be described with reference to the drawings. FIG. 19 is a perspective view schematically showing the head-mounted display 90 0.

[0118] The head-mounted display 900 is a head-mounted display having an appearance like glasses, as shown in FIG. 19. The head-mounted display 900 is worn on the head of an observer. The observer is the user who uses the head-mounted display 900. The head-mounted display 900 can allow the observer to visually recognize video light by a virtual image and can also allow the observer to visually recognize the outside world image in a see-through manner.

[0119] The head-mounted display 900 has, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0120] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the right eye of the observer. The second display unit 910b displays a virtual image for the left eye of the observer. The display units 910a and 910b have, for example, an image forming device 911 and a light guiding device 915.

[0121] The image forming device 911 forms image light. The image forming device 911 has, for example, an optical system such as a light source and a projection device, and an external member 912. The external member 912 houses the light source and the projection device.

[0122] The light guiding device 915 covers in front of the eyes of the observer. The light guiding device 915 guides the video light formed by the image forming device 911, and overlaps the outside light and the video light so that the observer can visually recognize them. Details of the image forming device 911 and the light guiding device 915 will be described later.

[0123] The frame 920 supports the first display unit 910a and the second display unit 910b. The frame 920 surrounds, for example, the display units 910a and 910b. In the illustrated example, the image forming device 911 of the first display unit 910a is attached to one end of the frame 920. The image forming device 911 of the second display unit 910b is attached to the other end of the frame 920.

[0124] The first temple 930a and the second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends from one end of the frame 920. The second temple 930b extends from the other end of the frame 920.

[0125] The first temple 930a and the second temple 930b are suspended on the ears of the observer when the head-mounted display 900 is worn by the observer. The head of the observer is positioned between the temples 930a and 930b.

[0126] 6.2. Image Forming Device and Light Guiding Device FIG. 20 is a diagram schematically showing an image forming device 911 and a light guiding device 915 of a first display unit 910a of a head-mounted display 900. Note that the first display unit 910a and the second display unit 910b basically have the same configuration. Therefore, the following description of the first display unit 910a can be applied to the second display unit 910b.

[0127] As shown in FIG. 20, the image forming device 911 includes, for example, a light emitting device 200 as a light source, a light modulation device 913, and a projection device 914 for imaging.

[0128] The light modulation device 913 modulates the light incident from the light emitting device 200 according to image information and emits image light. The light modulation device 913 is a transmissive liquid crystal light valve. Note that the light emitting device 200 may be a self-luminous light emitting device that emits light according to the input image information. In this case, the light modulation device 913 is not provided.

[0129] The projection device 914 projects the image light emitted from the light modulation device 913 toward the light guiding device 915. The projection device 914 is, for example, a projection lens. As the lens constituting the projection device 914, a lens having an axially symmetric surface as a lens surface may be used.

[0130] The light guiding device 915 is accurately positioned with respect to the projection device 914, for example, by being screwed onto the lens barrel of the projection device 914. The light guiding device 915 includes, for example, an image light guiding member 916 that guides image light and a transparent member 918 for perspective viewing.

[0131] The image light guide light member 916 receives the image light emitted from the projection device 914. The image light guide light member 916 is a prism that guides the image light toward the observer's eyes. The image light incident on the image light guide light member 916 is repeatedly reflected on the inner surface of the image light guide light member 916 and then reflected by the reflection layer 917 and emitted from the image light guide light member 916. The image light emitted from the image light guide light member 916 reaches the observer's eyes. The reflection layer 917 is composed of, for example, a metal or a dielectric multilayer film. The reflection layer 917 may be a half mirror.

[0132] The transparent member 918 is adjacent to the image light guide light member 916. The transparent member 918 is fixed to the image light guide light member 916. The outer surface of the transparent member 918 is continuous with, for example, the outer surface of the image light guide light member 916. The transparent member 918 allows the observer to see the external light through it. The image light guide light member 916 also has a function of allowing the observer to see the external light through it in addition to the function of guiding the image light. Note that the head-mounted display 900 may be configured not to allow the observer to see the external light through it.

[0133] The light-emitting device according to the above-described embodiment can be used in addition to projectors, displays, and head-mounted displays. The light-emitting device according to the above-described embodiment is used, for example, in indoor and outdoor lighting, laser printers, scanners, sensing devices using light, EVFs (Electronic View Finders), wearable displays such as smartwatches, vehicle-mounted lights, and vehicle-mounted head-up displays.

[0134] The above-described embodiments and modifications are examples and are not limited thereto. For example, it is also possible to appropriately combine each embodiment and each modification.

[0135] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations having the same functions, methods, and results, or configurations having the same objectives and effects. The present invention also includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. The present invention also includes configurations that exhibit the same operational effects as the configurations described in the embodiments or configurations that can achieve the same objectives. The present invention also includes configurations in which known technologies are added to the configurations described in the embodiments.

[0136] The following content is derived from the above-described embodiments and modifications.

[0137] One aspect of the light-emitting device is a substrate, a first pad provided on the substrate, a first electrode provided on the first pad, a first laminate provided on the first electrode, an insulating layer provided on a side surface of the first laminate, a first metal layer provided on the insulating layer, a second pad provided on the substrate and separated from the first pad, a conductive layer provided on the second pad, a second laminate provided on the conductive layer, a second metal layer provided on a side surface of the second laminate, a second electrode provided on a side opposite to the substrate of the first laminate and the second laminate and electrically connected to the second pad via the second metal layer, and the first laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is provided between the first semiconductor layer and the second electrode and is different from the first conductivity type, a first quantum well layer provided between the first semiconductor layer and the second semiconductor layer, and the second laminate includes a third semiconductor layer of the first conductivity type, Provided between the third semiconductor layer and the second electrode are a fourth semiconductor layer of the second conductivity type, and a second quantum well layer provided between the third semiconductor layer and the fourth semiconductor layer, and it has them.

[0138] According to this light-emitting device, the manufacturing process can be shortened.

[0139] In one aspect of the light-emitting device, a constant potential may be applied to the second electrode.

[0140] According to this light-emitting device, the amount of current injected into the first quantum well layer can be adjusted according to the potential of the first electrode.

[0141] In one aspect of the light-emitting device, the first laminate may have a tapered portion whose width increases from the first electrode side toward the second electrode side.

[0142] According to this light-emitting device, on the side surface of the tapered portion, the light generated in the first quantum well layer can be reflected toward the second electrode side.

[0143] In one aspect of the light-emitting device, a third metal layer provided on the side of the second electrode opposite to the substrate and having a reflecting surface for reflecting the light generated in the first quantum well layer is included, and the reflecting surface may be located on the extension of the side surface of the tapered portion.

[0144] According to this light-emitting device, while suppressing the leakage of the light transmitted through the second electrode to the outside, light with a narrower emission angle can be emitted.

[0145] In one aspect of the light-emitting device, a light-transmitting member provided on the side of the second electrode opposite to the first laminate and in contact with the reflecting surface may be included.

[0146] According to this light-emitting device, on the reflective surface, the light that has passed through the translucent member and is incident on the reflective surface can be more reliably reflected toward the translucent member side.

[0147] In one aspect of the light-emitting device, The surface of the translucent member on the side opposite to the substrate may be a curved surface.

[0148] According to this light-emitting device, the translucent member can function as a lens.

[0149] In one aspect of the light-emitting device, The insulating layer may have translucency.

[0150] According to this light-emitting device, even if the light generated in the first quantum well layer passes through the translucent insulating layer, the first metal layer can reflect the light that has passed through the insulating layer toward the first laminate side.

[0151] In one aspect of the light-emitting device, A plurality of light-emitting elements having the first laminate, the insulating layer, and the first metal layer are provided. The second laminate may be provided between the first laminates of one of the adjacent light-emitting elements and the first laminates of the other light-emitting element in a plan view.

[0152] According to this light-emitting device, it is not necessary to separately provide a space for forming the second laminate.

[0153] One aspect of the electronic device is having one aspect of the light-emitting device.

[0154] One aspect of the method for manufacturing a light-emitting device is a step of forming a first laminate and a second laminate spaced apart from each other on a first substrate; a step of forming a first electrode on the first laminate and forming a conductive layer on the second laminate; a step of forming an insulating layer on a side surface of the first laminate; Forming a first metal layer on the insulating layer and forming a second metal layer on a side surface of the second laminate; Bonding a structure having the first substrate, the first laminate, the second laminate, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with mutually separated first and second pads such that the first electrode faces the first pad and the conductive layer faces the second pad; Removing the first substrate to expose the first laminate and the second laminate; Forming a second electrode on the first laminate and the second laminate; including The first laminate has a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type, provided between the first semiconductor layer and the second electrode and different from the first conductivity type; a first quantum well layer between the first semiconductor layer and the second semiconductor layer; and has The second laminate has a third semiconductor layer of the first conductivity type; a fourth semiconductor layer of the second conductivity type, provided between the third semiconductor layer and the second electrode; a second quantum well layer between the third semiconductor layer and the fourth semiconductor layer; and has

[0155] According to the method for manufacturing this light-emitting device, the manufacturing process can be shortened.

Description of Reference Numerals

[0156] 2…First tapered portion, 3…Second tapered portion, 4…First side surface, 5…Second side surface, 10…Drive substrate, 12…First pad, 14…Second pad, 16…First layer, 18…Second layer, 20…First laminate, 21…Second laminate, 22…First semiconductor layer, 23…Third semiconductor layer, 24…First quantum well layer, 25…Second quantum well layer, 26…Second semiconductor layer, 27…Fourth semiconductor layer, 28…Contact surface, 29…Convex portion, 30…First electrode, 31…Conductive layer, 32…Second electrode, 40…Insulating layer, 42…First contact hole, 50…First metal layer, 51…Second metal layer, 60…Protective layer, 62…Second contact hole, 64…Third contact hole, 70…Third metal layer, 72…Adhesive layer, 74…Reflection surface, 80…Light-transmissive member, 82…Emission surface, 90…Growth substrate, 92…Support substrate, 94…Buffer layer, 100…Light-emitting device, 102…Light-emitting element, 104…Connection portion, 106…Structure, 110, 112, 114…Semiconductor layer, 116…Conductive layer, 118…Metal layer, 120…Resist layer, 200…Light-emitting device, 200R…Red light source, 200G…Green light source, 200B…Blue light source, 700…Projector, 702R…First optical element, 702G…Second optical element, 702B…Third optical element, 704R…First light modulation device, 704G…Second light modulation device, 704B…Third light modulation device, 706…Cross dichroic prism, 708…Projection device, 710…Screen, 800…Display, 810…Drive circuit, 812…Display area, 814…Data line drive circuit, 816…Scan line drive circuit, 818…Control circuit, 820…Lens array, 830…Heat sink, 900…Head-mounted display, 910a…First display portion, 910b…Second display portion, 911…Imaging device, 912…External member, 913…Light modulation device, 914…Projection device, 915…Light guide device, 916…Video light guide member, 917…Reflection layer, 918…Transparent member, 920…Frame, 930a…First template, 930b…Second template

Claims

1. A substrate, a first pad provided on the substrate, a first electrode provided on the first pad, a first laminate provided on the first electrode, an insulating layer provided on a side surface of the first laminate, a first metal layer provided on the insulating layer, a second pad provided on the substrate and spaced apart from the first pad, a conductive layer provided on the second pad, a second laminate provided on the conductive layer, a second metal layer provided on a side surface of the second laminate, a second electrode provided on a side of the first laminate and the second laminate opposite to the substrate and electrically connected to the second pad through the second metal layer, comprising, the first laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, provided between the first semiconductor layer and the second electrode and different from the first conductivity type, a first quantum well layer provided between the first semiconductor layer and the second semiconductor layer, having, the second laminate includes a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, provided between the third semiconductor layer and the second electrode, a second quantum well layer provided between the third semiconductor layer and the fourth semiconductor layer, a light-emitting device having.

2. In Claim 1, a constant potential is applied to the second electrode, a light-emitting device.

3. In Claim 1, the first laminate has a tapered portion whose width increases from the first electrode side toward the second electrode side, a light-emitting device.

4. In Claim 3, a third metal layer provided on a side of the second electrode opposite to the substrate and having a reflecting surface for reflecting light generated in the first quantum well layer is included, the reflecting surface is located on an extension of a side surface of the tapered portion, a light-emitting device.

5. In Claim 4, a light-transmitting member provided on a side of the second electrode opposite to the first laminate and in contact with the reflecting surface is included, a light-emitting device.

6. In Claim 5, a surface of the light-transmitting member opposite to the substrate is a curved surface, a light-emitting device.

7. In Claim 1, the insulating layer has light-transmittance, a light-emitting device.

8. In Claim 1, a plurality of light-emitting elements having the first laminate, the insulating layer, and the first metal layer are provided, the second laminate is provided between the first laminates of one of the adjacent light-emitting elements and the first laminates of the other light-emitting element in a plan view, a light-emitting device.

9. An electronic device including the light-emitting device according to any one of claims 1 to 8.

10. A step of forming a first laminate and a second laminate separated from each other on a first substrate; A step of forming a first electrode on the first laminate and forming a conductive layer on the second laminate; A step of forming an insulating layer on a side surface of the first laminate; A step of forming a first metal layer on the insulating layer and forming a second metal layer on a side surface of the second laminate; A step of bonding a structure having the first substrate, the first laminate, the second laminate, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with a first pad and a second pad separated from each other, such that the first electrode faces the first pad and the conductive layer faces the second pad; A step of removing the first substrate to expose the first laminate and the second laminate; A step of forming a second electrode on the first laminate and the second laminate; comprising; The first laminate includes: A first semiconductor layer of a first conductivity type; A second semiconductor layer of a second conductivity type, provided between the first semiconductor layer and the second electrode and different from the first conductivity type; A first quantum well layer between the first semiconductor layer and the second semiconductor layer; having; The second laminate includes: A third semiconductor layer of the first conductivity type; A fourth semiconductor layer of the second conductivity type, provided between the third semiconductor layer and the second electrode; A second quantum well layer between the third semiconductor layer and the fourth semiconductor layer; A method for manufacturing a light-emitting device.

Images