Method for manufacturing light emitting device

Abstract

To provide a method for manufacturing a light emitting device that can improve a yield.SOLUTION: A method for manufacturing a light-emitting device includes a step of preparing a laminate having a substrate 10 having a first surface 11 and a second surface 12 located on the opposite side to the first surface, the second surface having a first region 12a and a second region 12b located outside the first region, a semiconductor layer 20 arranged in a first region, and a covering member 30 that is arranged in the second region, covers the second region, and surrounds the outer periphery of the semiconductor layer in planar view, and a step of irradiating the laminate with laser light from the first surface side of the substrate to peel off the substrate from the semiconductor layer and the covering member. The peeling step includes a first step of irradiating the first region with laser light of first irradiation intensity to peel off the substrate from the semiconductor layer, and a second step which is performed after the first step and irradiates at least the second region with laser light of second irradiation intensity lower than the first irradiation intensity to peel off the substrate from the covering member.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] An embodiment relates to a method for manufacturing a light-emitting device.

Background Art

[0002] When manufacturing a light-emitting device, it is known to use a technique (laser lift-off) of irradiating a laminate in which a semiconductor layer is formed on a substrate with laser light to peel the substrate from the semiconductor layer (for example, Patent Document 1). In laser lift-off, by irradiating laser light onto the interface between the substrate and the semiconductor layer, the semiconductor layer can be decomposed at the interface and the substrate can be peeled from the semiconductor layer. In the method for manufacturing a light-emitting device using laser lift-off, it is required to reduce cracks in the semiconductor layer during peeling and improve the yield.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment aims to provide a method for manufacturing a light-emitting device that can improve the yield.

Means for Solving the Problems

[0005] A method for manufacturing a light-emitting device according to an embodiment of the present invention includes a substrate having a first surface and a second surface located on the side opposite to the first surface, the second surface having a first region and a second region located outside the first region, a semiconductor layer disposed in the first region, and a covering member disposed in the second region, covering the second region, and surrounding the outer periphery of the semiconductor layer in a plan view. The method includes a step of preparing a laminate having the above components, and a step of irradiating the laminate with laser light from the first surface side of the substrate to peel the substrate from the semiconductor layer and the covering member. The peeling step includes a first step of irradiating the first region with the laser light having a first irradiation intensity to peel the substrate from the semiconductor layer, and a second step of irradiating at least the second region with the laser light having a second irradiation intensity lower than the first irradiation intensity after the first step to peel the substrate from the covering member.

Advantages of the Invention

[0006] According to an embodiment of the present invention, it is possible to provide a method for manufacturing a light-emitting device that can improve the yield.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Embodiments for Carrying Out the Invention

[0008] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thickness and width of each part, the size ratios between parts, etc. are not necessarily the same as in reality. Even when representing the same part, there may be cases where their dimensions and ratios are shown differently in the drawings. In this specification and each figure, the same reference numerals are assigned to elements similar to those already described, and detailed descriptions are omitted as appropriate.

[0009] Also, in the following, for the sake of clarity, the arrangement and configuration of each part will be described using the XYZ orthogonal coordinate system. The X-axis, Y-axis, and Z-axis are mutually orthogonal. Also, the direction in which the X-axis extends is defined as the "X direction", the direction in which the Y-axis extends is defined as the "Y direction", and the direction in which the Z-axis extends is defined as the "Z direction". Also, for the sake of clarity, among the Z-directions, the direction of the arrow is defined as upward and the opposite direction as downward, but these directions are independent of the direction of gravity. Also, viewing along the Z-direction is defined as "plan view". Also, as a cross-sectional view, an end view showing only the cut surface may be used. In this specification, "corresponding" means the relationship between regions and regions, surfaces and surfaces, members and members, regions and members, surfaces and members, and regions and surfaces, etc. that are related to each other.

[0010] <First Embodiment> FIG. 1 is a schematic plan view showing a laminate of a method for manufacturing a light-emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing the step of preparation in the method for manufacturing a light-emitting device according to the first embodiment. FIGS. 3, 5, 7, 9, and 11 are schematic plan views showing the step of peeling in the method for manufacturing a light-emitting device according to the first embodiment. FIGS. 4, 6, 8, and 10 are schematic cross-sectional views showing the step of peeling in the method for manufacturing a light-emitting device according to the first embodiment. FIG. 12 is a schematic cross-sectional view showing the step of cutting a coating member in the method for manufacturing a light-emitting device according to the first embodiment. FIG. 13 is a schematic cross-sectional view showing the step of disposing a light-transmitting layer in the method for manufacturing a light-emitting device according to the first embodiment. FIG. 14 is a schematic cross-sectional view showing the step of mounting a semiconductor layer in the method for manufacturing a light-emitting device according to the first embodiment. FIG. 15 is a schematic cross-sectional view showing a step of arranging a light-reflective member in a method of manufacturing a light-emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view taken along line II-II shown in FIG. 1. FIG. 4 is a schematic cross-sectional view taken along line IV-IV shown in FIG. 3. FIG. 6 is a schematic cross-sectional view taken along line VI-VI shown in FIG. 5. FIG. 8 is a schematic cross-sectional view taken along line VIII-VIII shown in FIG. 7. FIG. 10 is a schematic cross-sectional view taken along line X-X shown in FIG. 9. As shown in FIGS. 1 to 11, the method of manufacturing a light-emitting device according to the first embodiment includes a preparation step and a peeling step. Specifically, the method of manufacturing a light-emitting device according to the first embodiment has a first surface and a second surface located on the side opposite to the first surface, and the second surface has a substrate having a first region and a second region located outside the first region, a semiconductor layer disposed in the first region, and a coating member disposed in the second region, covering the second region, and surrounding the outer periphery of the semiconductor layer in a plan view. The method includes a step of preparing a laminate having the coating member, and a step of irradiating the laminate with laser light from the first surface side of the substrate to peel the substrate from the semiconductor layer and the coating member. The peeling step includes a first step of irradiating the first region with the laser light having a first irradiation intensity to peel the substrate from the semiconductor layer, and a second step that is performed after the first step and irradiates at least the second region with the laser light having a second irradiation intensity lower than the first irradiation intensity to peel the substrate from the coating member. As described above, the peeling step is performed after the preparation step. Thereby, when peeling the substrate from the semiconductor layer, since the substrate is not peeled from the coating member, the stress applied to the semiconductor layer can be reduced. As a result, in the peeling step, the possibility of the semiconductor layer cracking can be reduced. Therefore, it is possible to provide a method of manufacturing a light-emitting device that can improve the yield.

[0011] (Preparation step) As shown in FIGS. 1 and 2, in the preparation step, a laminate 50 is prepared. The laminate 50 includes a substrate 10, a semiconductor layer 20, and a covering member 30. The semiconductor layer 20 and the covering member 30 are laminated on the substrate 10. The substrate 10 has a first surface 11 and a second surface 12. The second surface 12 is located on the side opposite to the first surface 11. The first surface 11 and the second surface 12 are planes orthogonal to the Z direction. The laminate 50 can have an electrode 21 on the surface of the semiconductor layer 20 opposite to the side where the substrate 10 is disposed.

[0012] The second surface 12 has a first region 12a and a second region 12b. In a plan view, the second region 12b is located outside the first region 12a. The second region 12b surrounds the first region 12a in a plan view. The semiconductor layer 20 is disposed in the first region 12a. The first region 12a is the region of the second surface 12 that contacts the semiconductor layer 20. The covering member 30 is disposed in the second region 12b. The second region 12b is the region of the second surface 12 that contacts the covering member 30. The covering member 30 covers the second region 12b. The covering member 30 surrounds the outer periphery of the semiconductor layer 20 in a plan view.

[0013] The number of semiconductor layers 20 disposed on one substrate 10 may be one or a plurality. When the laminate 50 has a plurality of semiconductor layers 20, the plurality of semiconductor layers 20 are arranged so as to be separated from each other in a plan view. In the examples shown in FIGS. 1 to 15, in the laminate 50, nine semiconductor layers 20 are arranged in a matrix on one substrate 10. In the examples shown in FIGS. 1 to 15, three semiconductor layers 20 are arranged in the X direction and three semiconductor layers 20 are arranged in the Y direction.

[0014] When the laminate 50 has a plurality of semiconductor layers 20, the second surface 12 of the substrate 10 has a plurality of first regions 12a corresponding to each of the plurality of semiconductor layers 20. When the laminate 50 has a plurality of semiconductor layers 20, among the second surface 12, the regions other than the plurality of first regions 12a correspond to the second region 12b.

[0015] The laminate 50 may be prepared by purchase or by fabrication. When the laminate 50 is prepared by fabrication, the preparation process includes, for example, a process of growing the semiconductor layer 20 in the first region 12a of the substrate 10 and a process of forming the covering member 30 in the second region 12b of the substrate 10. The preparation process may include a process of growing the semiconductor layer 20 in the first region 12a and the second region 12b of the substrate 10, a process of removing the semiconductor layer 20 disposed in the second region 12b of the substrate 10, and a process of forming the covering member 30 in the second region 12b of the substrate 10. Further, the preparation process may include a process of preparing by purchase a structure in which the semiconductor layer 20 is disposed in the first region 12a and the second region 12b of the substrate 10, a process of removing the semiconductor layer 20 disposed in the second region 12b of the substrate 10, and a process of forming the covering member 30 in the second region 12b of the substrate 10.

[0016] (Peeling process) As shown in FIGS. 3 to 11, in the peeling process, the laser beams LT1 and LT2 are irradiated onto the laminate 50 from the first surface 11 side of the substrate 10 to peel the substrate 10 from the semiconductor layer 20 and the covering member 30. In FIGS. 3, 5, 7, and 9, the region irradiated with the laser beam is indicated by dot hatching surrounded by a two-dot chain line. The peeling process has a first process and a second process. The second process is performed after the first process.

[0017] As shown in FIGS. 3 and 4, in the first step, the substrate 10 is peeled off from the semiconductor layer 20 by irradiating the first region 12a with the laser light LT1 having the first irradiation intensity from the side of the first surface 11. In the first step, in a plan view, the region including the semiconductor layer 20 is irradiated with the laser light LT1. In the first step, the first region 12a may be irradiated with the laser light LT1 having the first irradiation intensity, or in addition to the first region 12a, a part of the second region 12b (for example, a region corresponding to at least a part of the covering member 30 surrounding the outer periphery of one semiconductor layer 20 in a plan view) may be irradiated with the laser light LT1. When a part of the second region 12b is irradiated with the laser light LT1 in the first step, it is preferable that the width of the region of the second region 12b irradiated with the laser light LT1 in the first step is 1 / 20 or less of the width of the covering member 30 (that is, the width between two adjacent semiconductor layers 20). Thereby, it is possible to prevent the substrate 10 from peeling off from the covering member 30 at the stage of the first step.

[0018] As shown in FIGS. 5 and 6, the first step is performed, for example, on all the first regions 12a (that is, all the semiconductor layers 20 included in the laminate 50). In the first step, the irradiation of the laser light LT1 may be performed on each first region 12a in order from one end side to the other end side in the Y direction, or the irradiation of the laser light LT1 may be performed on all the first regions 12a at the same time. Also, the irradiation of the laser light LT1 may be performed on each of the plurality of first regions 12a in order.

[0019] In the first step, the laser beam LT1 is irradiated from the first surface 11 side of the substrate 10, passes through the substrate 10, and reaches near the interface between the substrate 10 and the semiconductor layer 20 (that is, the surface where the first region 12a of the second surface 12 of the substrate 10 is in contact with the semiconductor layer 20). For example, in the case of the semiconductor layer 20 of a gallium nitride-based compound semiconductor, the gallium nitride present near the interface between the substrate 10 and the semiconductor layer 20 is decomposed into metallic gallium and nitrogen gas by the laser beam LT1, so that the semiconductor layer 20 can be peeled off from the substrate 10. As a result, the semiconductor layer 20 and the substrate 10 are separated via the gap 15. Note that the covering member 30 on which the laser beam LT1 is not irradiated maintains the state of being in contact with the substrate 10, so that each gap 15 formed between each semiconductor layer 20 and the substrate 10 exists in a separated state.

[0020] As shown in FIGS. 7 and 8, in the second step, at least in the second region 12b, a laser beam LT2 having a second irradiation intensity lower than the first irradiation intensity is irradiated to peel the substrate 10 from the covering member 30. In the second step, in a plan view, at least a part of the covering member 30 surrounding the outer periphery of one semiconductor layer 20 is irradiated with the laser beam LT2. In the second step, for example, the covering member 30 surrounding the outer periphery of one semiconductor layer 20 can be irradiated with the laser beam LT2. When a part of the covering member 30 surrounding the outer periphery of the semiconductor layer 20 is irradiated with the laser beam LT2 in the first step, in the second step, the laser beam LT2 may be irradiated to the region including the region irradiated with the laser beam LT1 in the first step among the covering members 30 surrounding the outer periphery of the semiconductor layer 20, or the laser beam LT2 may be irradiated to the region not including the region irradiated with the laser beam LT1 in the first step.

[0021] As shown in FIGS. 9 and 10, the second step is performed, for example, on the entire second region 12b. In the second step, the irradiation of the laser beam LT2 may be performed in order from one end side to the other end side in the Y direction on each second region 12b surrounding the first region 12a, or the irradiation of the laser beam LT2 on the entire second region 12b may be performed simultaneously.

[0022] In the example shown in FIGS. 7 to 10, in the second step, the first region 12a and the second region 12b are irradiated with the laser light LT2. However, in the second step, it is not necessary to irradiate the first region 12a with the laser light LT2.

[0023] In the second step, the laser light LT2 is irradiated from the first surface 11 side of the substrate 10, passes through the substrate 10, and reaches the vicinity of the interface between the substrate 10 and the covering member 30 (that is, the surface where the second region 12b of the second surface 12 of the substrate 10 is in contact with the covering member 30). When the covering member 30 contains, for example, a resin, the resin contained in the covering member 30 is thermally decomposed by the heat caused by the laser light LT2. As a result, the covering member 30 can be peeled off from the substrate 10.

[0024] In the peeling step, the second irradiation intensity of the laser light LT2 irradiated in the second step is made lower than the first irradiation intensity of the laser light LT1 irradiated in the first step. The second irradiation intensity is preferably 1 / 8 or more and 1 / 4 or less of the first irradiation intensity. Thereby, when the covering member 30 contains, for example, a resin, it is possible to reduce the excessive thermal decomposition of the resin contained in the covering member 30, so that the peeling between the substrate 10 and the covering member 30 can be performed favorably. As will be described later, when the covering member 30 is made of a resin containing titanium oxide, when the covering member 30 is irradiated with laser light, the titanium oxide absorbs the laser light and generates heat, thereby thermally decomposing the resin. Also, the titanium oxide may be blackened by absorbing the laser light. With the above-described second irradiation intensity, in the second step, it is possible to reduce the blackening of the covering member 30 due to the blackening of the titanium oxide. The first irradiation intensity is represented by the energy per unit area (MW / cm 2 ). The first irradiation intensity is, for example, 40 MW / cm 2 or more and 80 MWJ / cm 2 or less. The second irradiation intensity is, for example, 5 MW / cm 2 or more and 15 MW / cm 2 or less.

[0025] When the first step is performed, the substrate 10 is separated from the semiconductor layer 20, and nitrogen gas generated when the semiconductor layer 20 is decomposed by the irradiation of the laser light LT1 is confined in the gap 15. When the second step is performed, the substrate 10 is separated from the coating member 30, and a gap is formed between the coating member 30 and the substrate 10. Therefore, by performing the second step after the first step, as shown in FIG. 10, the substrate 10 can be separated from the semiconductor layer 20 and the coating member 30. At this time, adjacent gaps 15 are connected to each other, and the nitrogen gas can escape to the outside. Thereby, in the separating step, the possibility of cracking of the semiconductor layer 20 can be reduced.

[0026] As a means for making different the region irradiated with the laser light LT1 in the first step and the region irradiated with the laser light LT2 in the second step, using a mask can be mentioned. In the examples shown in FIGS. 3 to 10, in the first step, the first mask MS1 is prepared, and the laminate 50 is irradiated with the laser light LT1 through the first mask MS1. Also, in the second step, the second mask MS2 is prepared, and the laminate 50 is irradiated with the laser light LT2 through the second mask MS2. The first mask MS1 and the second mask MS2 are respectively arranged on the side of the laminate 50 where the laser lights LT1 and LT2 are irradiated. The laser lights LT1 and LT2 are irradiated, for example, from the laser light irradiation device LS. The first mask MS1 and the second mask MS2 are respectively arranged, for example, between the laser light irradiation device LS and the laminate 50.

[0027] The first mask MS1 has a first light-transmitting portion MS1a and a first light-shielding portion MS1b. The first light-transmitting portion MS1a has a portion corresponding to the first region 12a. The first light-transmitting portion MS1a transmits the laser light LT1. The first light-shielding portion MS1b is located outside the first light-transmitting portion MS1a. The first light-shielding portion MS1b shields the laser light LT1. In the example shown in FIG. 4, the first mask MS1 is composed of a light-shielding plate having a through-hole and a light-transmitting plate disposed in the through-hole. In this case, the light-shielding plate corresponds to the first light-shielding portion MS1b, and the light-transmitting plate corresponds to the first light-transmitting portion MS1a. Note that the present invention is not limited to this, and the through-hole of the light-shielding plate may be a cavity. In this case, the cavity of the through-hole corresponds to the first light-transmitting portion MS1a. Further, the first mask MS1 may be composed of a light-shielding plate having a through-hole and a light-transmitting plate that straddles the through-hole of the light-shielding plate and is disposed above or below the light-shielding plate. In this case, the light-shielding plate corresponds to the first light-shielding portion MS1b, and the region of the light-transmitting plate corresponding to the through-hole of the light-shielding plate corresponds to the first light-transmitting portion MS1a. Note that the through-hole of the light-shielding plate may be one or a plurality.

[0028] A plurality of light-shielding films that block the laser light LT1 may or may not be disposed on the upper surface or the lower surface of the first light-transmitting portion MS1a of the light-transmitting plate. When a plurality of light-shielding films are disposed on the upper surface or the lower surface of the first light-transmitting portion MS1a of the light-transmitting plate, for example, in a plan view, a plurality of first light-shielding films are disposed in the first outer peripheral region of the first light-transmitting portion MS1a of the light-transmitting plate, and a plurality of second light-shielding films can be disposed in the first central region located inside the first outer peripheral region in the first light-transmitting portion MS1a of the light-transmitting plate. In this case, it is preferable to make the interval between adjacent second light-shielding films wider than the interval between adjacent first light-shielding films. In the first step, when the laser light LT1 with the same irradiation intensity is irradiated on the region corresponding to the first outer peripheral region of the substrate 10 (hereinafter, may be referred to as the "second outer peripheral region") and the region corresponding to the first central region of the substrate 10 (hereinafter, may be referred to as the "second central region"), the substrate 10 in the second outer peripheral region may peel off earlier than the substrate 10 in the second central region. Therefore, by making the interval between adjacent second light-shielding films wider than the interval between adjacent first light-shielding films, the irradiation intensity of the laser light LT1 irradiated on the second central region is made higher than the irradiation intensity of the laser light LT1 irradiated on the second outer peripheral region, so that the peeling of the substrate 10 in the second central region can be accelerated, and the peeling of the substrate 10 in the second outer peripheral region can be relatively delayed. Thereby, the deviation in timing between the peeling of the substrate 10 in the second central region and the peeling of the substrate 10 in the second outer peripheral region can be reduced. As a result, the possibility that the semiconductor layer 20 cracks when the substrate 10 peels off can be reduced. The first light-shielding film and the second light-shielding film are, for example, circular in a plan view.

[0029] The second mask MS2 has a second light-transmitting portion MS2a and a second light-shielding portion MS2b. The second light-transmitting portion MS2a has at least a portion corresponding to the second region 12b. The second light-transmitting portion MS2a transmits the laser light LT2. The second light-shielding portion MS2b is located outside the second light-transmitting portion MS2a. The second light-shielding portion MS2b shields the laser light LT2. In the example shown in FIG. 8, the second mask MS2 is composed of a light-shielding plate having a through-hole and a light-transmitting plate disposed in the through-hole. In this case, the light-shielding plate corresponds to the second light-shielding portion MS2b, and the light-transmitting plate corresponds to the second light-transmitting portion MS2a. Not limited to this, the through-hole of the light-shielding portion may be a cavity. In this case, the cavity of the through-hole corresponds to the second light-transmitting portion MS2a. Further, the second mask MS2 may be composed of a light-shielding plate having a through-hole and a light-transmitting plate disposed above or below the light-shielding plate across the through-hole of the light-shielding plate. In this case, the light-shielding plate corresponds to the second light-shielding portion MS2b, and the region of the light-transmitting plate corresponding to the through-hole of the light-shielding plate corresponds to the second light-transmitting portion MS2a. Note that the through-hole of the light-shielding plate may be one or a plurality.

[0030] In the example shown in FIG. 8, in the second step, the first region 12a and the second region 12b are irradiated with the laser light LT2. The laser light LT2 irradiated on the second region 12b irradiates the entire coating member 30 located on the +Y direction side of the semiconductor layer 20 irradiated with the laser light LT2. Further, the laser light LT2 irradiated on the second region 12b irradiates the region from the end on the -Y direction side of the semiconductor layer 20 to an arbitrary position (for example, the midpoint) between the semiconductor layer 20 and another adjacent semiconductor layer 20 in the coating member 30 located on the -Y direction side of the semiconductor layer 20 irradiated with the laser light LT2. Therefore, the second light-transmitting portion MS2a has a portion corresponding to a region including the entire coating member 30 located on the +Y direction side of the semiconductor layer 20 irradiated with the laser light LT2 and the region from the end on the -Y direction side of the semiconductor layer 20 to an arbitrary position (for example, the midpoint) between the semiconductor layer 20 and another adjacent semiconductor layer 20 in the coating member 30 located on the -Y direction side of the semiconductor layer 20 irradiated with the laser light LT2. The outer shape of the second light-transmitting portion MS2a in plan view is larger than the outer shape of the first light-transmitting portion MS1a in plan view. In the second step, when the first region 12a is not irradiated with the laser light LT2, the second light-shielding portion MS2b has a portion corresponding to the first region 12a.

[0031] By using the first mask MS1 in the first step and the second mask MS2 in the second step, the region irradiated with the laser light LT1 in the first step and the region irradiated with the laser light LT2 in the second step can be easily made different.

[0032] As described above, the laminate 50 has, for example, a plurality of semiconductor layers 20. The plurality of semiconductor layers 20 are arranged, for example, in a plurality of columns. In the example shown in FIG. 11, the plurality of semiconductor layers 20 are arranged in three columns, namely, column C1, column C2, and column C3 along the Y direction. Three semiconductor layers 20 are arranged in each of column C1, column C2, and column C3. Column C2 is located between column C1 and column C3 in the X direction. Column C1 and column C3 are the columns at both ends, and column C2 is the column other than the columns at both ends.

[0033] Columns C1, C2, and C3 can perform the peeling process on each semiconductor layer 20 in any order. For example, the peeling process can be performed on each semiconductor layer 20 in order in the -X direction, such as in the order of columns C1, C2, and C3. Also, after performing the peeling process on the semiconductor layers 20 arranged in the columns other than the two ends in the order of columns C2, C1, and C3, it is preferable to perform the peeling process on the semiconductor layers 20 arranged in the columns other than the two ends. When irradiating the laminate 50 with the laser beams LT1 and LT2, a fixing member for fixing the laminate can be arranged to fix the position of the laminate 50. After performing the peeling process on the semiconductor layers 20 arranged in the columns other than the two ends, by performing the peeling process on the semiconductor layers 20 arranged in the columns other than the two ends, it is possible to reduce the displacement of the laminate 50 in the -X direction with respect to the fixing member. In each column, the peeling process can be performed in order from one end side in the Y direction to the other end side (that is, in the order indicated by the white arrow in FIG. 11).

[0034] In addition, when the number of columns is four or more, for example, the peeling process is performed on the columns other than the two ends, and then, in the -X direction, the peeling process is performed in order up to the column located on the most -X direction side. Thereafter, the peeling process can be performed in the -X direction from the column located on the most +X direction side. However, it is not limited thereto, and the peeling process may be performed on the column located at the end on the +X direction side, and then the peeling process may be performed in order up to the column located on the most -X direction side in the -X direction. Also, the peeling process may be performed on the column located at the end on the -X direction side, and then the peeling process may be performed in order up to the column located on the most +X direction side in the +X direction.

[0035] In the first step and the second step, after the first step is performed on one semiconductor layer 20, the second step may be performed on the covering member 30 surrounding the outer periphery of this semiconductor layer 20, and then, after the first step is performed on another semiconductor layer 20, the second step may be performed on the covering member 30 surrounding the outer periphery of this semiconductor layer 20.

[0036] In the example shown in FIGS. 7 to 8, in the second step, when irradiating the covering member 30 surrounding the outer periphery of one of the two adjacent semiconductor layers 20 with the laser light LT2, the laser light LT2 is irradiated to a part (for example, half) of the covering member 30 located between the two semiconductor layers 20. Then, when irradiating the covering member 30 surrounding the outer periphery of the other semiconductor layer 20 with the laser light LT2, the remaining part (for example, the remaining half) of the covering member 30 located between the two semiconductor layers 20 is irradiated with the laser light LT2. Thereby, the entire area of the covering member 30 located between the two semiconductor layers 20 is irradiated with the laser light LT2. In the second step, when irradiating the covering member 30 surrounding the outer periphery of one of the two adjacent semiconductor layers 20 with the laser light LT2, the entire area of the covering member 30 located between the two semiconductor layers 20 is irradiated with the laser light LT2, and when irradiating the covering member 30 surrounding the outer periphery of the other semiconductor layer 20 with the laser light LT2, the entire area of the covering member 30 located between the two semiconductor layers 20 may also be irradiated with the laser light LT2. That is, in the second step, the covering member 30 located between the two semiconductor layers 20 may be irradiated with the laser light LT2 a plurality of times. Further, in the second step, when irradiating the covering member 30 surrounding the outer periphery of one of the two adjacent semiconductor layers 20 with the laser light LT2, the covering member 30 located between the two semiconductor layers 20 is not irradiated with the laser light LT2, and when irradiating the covering member 30 surrounding the outer periphery of the other semiconductor layer 20 with the laser light LT2, the entire area of the covering member 30 located between the two semiconductor layers 20 may be irradiated with the laser light LT2.

[0037] The substrate 10, the semiconductor layer 20, and the covering member 30 constituting the laminate 50 will be described.

[0038] (Substrate) The substrate 10 is a member on which the semiconductor layer 20 and the covering member 30 are laminated. The substrate 10 can transmit, for example, the laser lights LT1 and LT2. The substrate 10 includes, for example, at least one of sapphire and glass. The shape of the substrate 10 is, for example, a flat plate shape. In this specification, the "flat plate shape" only needs to be substantially plate-shaped, and the flat plate-shaped surface may be a corrugated shape or a plate shape having fine irregularities.

[0039] (Semiconductor layer) The semiconductor layer 20 includes, for example, an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The light-emitting layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting layer may have a structure such as a double heterojunction or a single quantum well (SQW), or may have a structure having a group of light-emitting layers like a multiple quantum well (MQW). The emission peak wavelength of the light-emitting layer can be appropriately selected according to the purpose. The light-emitting layer can be configured to emit, for example, visible light or ultraviolet light. Such a semiconductor laminate including the light-emitting layer is, for example, In x Al y Ga 1-x-y It includes semiconductors of all compositions in which the composition ratios x and y are changed within their respective ranges in the chemical formula consisting of N(0≦x, 0≦y, x + y≦1).

[0040] The semiconductor layer 20 may have a structure including one or more light-emitting layers between the n-type semiconductor layer and the p-type semiconductor layer, or may have a structure in which a structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in this order is repeated a plurality of times. When the semiconductor layer 20 includes a plurality of light-emitting layers, the plurality of light-emitting layers may include light-emitting layers having different emission peak wavelengths, or may include light-emitting layers having the same emission peak wavelength. Note that the same emission peak wavelength includes cases where there is a variation within ±10 nm. The combination of the emission peak wavelengths between the plurality of light-emitting layers can be appropriately selected. For example, when the semiconductor layer 20 includes two light-emitting layers, the light-emitting layers can be selected in combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. Each light-emitting layer may include a plurality of active layers having different emission peak wavelengths, or may include a plurality of active layers having the same emission peak wavelength.

[0041] The semiconductor layer 20 is, for example, rectangular in plan view. The length of one side of the semiconductor layer 20 in plan view is, for example, 200 μm or more and 2000 μm or less.

[0042] (Coating member) The covering member 30 is a member for holding the semiconductor layer 20. When the laminate 50 has a plurality of semiconductor layers 20, the covering member 30 can cover the side surfaces of the semiconductor layers 20 and the second region 12b of the substrate 10 and connect adjacent semiconductor layers 20. Thereby, when the semiconductor layer 20 is peeled from the substrate 10, the covering member 30 can hold each semiconductor layer 20. The covering member 30 includes, for example, a resin and a light reflecting material. The resin is, for example, a silicone resin, an epoxy resin, a polyimide resin, or a modified resin thereof. The light reflecting material is, for example, titanium oxide, aluminum oxide, or silicon oxide. As the light reflecting material, titanium oxide is preferable because it is relatively stable against moisture and the like and has a high refractive index. By the covering member 30 including a resin and a light reflecting material, the covering member 30 can be used as a light reflecting member of the light emitting device. Note that the covering member 30 may be composed of only a resin without including a light reflecting material.

[0043] The laminate 50 can further include a support 40. The support 40 supports the semiconductor layer 20 and the covering member 30. The support 40 is disposed on the surface of the semiconductor layer 20 and the covering member 30 opposite to the substrate 10. That is, the semiconductor layer 20 and the covering member 30 are each positioned between the substrate 10 and the support 40. As the material of the support 40, for example, a resin (e.g., polyolefin, polyimide), metal, glass, sapphire, or silicon can be used. The thickness of the support 40 is, for example, 70 μm or more and 200 μm or less.

[0044] (Laser light) As the laser light irradiation device LS, a gas laser or a solid laser can be used. As the gas laser, for example, an excimer laser can be used. The laser light irradiation device LS irradiates, for example, pulsed laser lights LT1 and LT2. In this case, the pulse width is, for example, 20 nsec. The emission peak wavelengths of the laser lights LT1 and LT2 are, for example, 248 nm. The laser lights LT1 and LT2 can, for example, exit from the laser light irradiation device LS, pass through the lens LU and the first mask MS1 or the second mask MS2, and reach the laminate 50. Also, as the laser lights LT1 and LT2, a top-hat type laser light with a substantially uniform irradiation intensity distribution of the laser light can be used.

[0045] (Step of cutting the covering member 30) The manufacturing method of the light-emitting device according to the first embodiment can further include a step of cutting the covering member 30.

[0046] As shown in FIG. 12, in the step of cutting the covering member 30, the covering member 30 between the semiconductor layers 20 adjacent to each other is cut. For example, when there is one semiconductor layer 20 included in the laminate 50, the cutting step can be omitted.

[0047] (Step of disposing the light-transmitting layer 60) The manufacturing method of the light-emitting device according to the first embodiment can further include a step of disposing the light-transmitting layer 60. The step of disposing the light-transmitting layer 60 is performed, for example, after the peeling step.

[0048] As shown in FIG. 13, in the step of disposing the light-transmitting layer 60, the light-transmitting layer 60 is disposed on the surface of the semiconductor layer 20 on the side where the substrate 10 is peeled off. The light-transmitting layer 60 contains, for example, a phosphor. As the phosphor, a known phosphor is used. A light-emitting device that emits light of a desired color in combination with each phosphor can be used. For example, when the light emitted by the semiconductor layer 20 is blue light and the phosphor is a yttrium aluminum garnet-based phosphor (hereinafter referred to as "YAG phosphor") that converts blue light into yellow light, white light can be extracted from the light-emitting device by mixing the blue light emitted by the semiconductor layer 20 and the yellow light wavelength-converted by the YAG phosphor. The light-transmitting layer 60 is disposed on the surface of the semiconductor layer on the side where the substrate 10 is peeled off, for example, via an adhesive member. The shape of the light-transmitting layer 60 is, for example, a flat plate shape.

[0049] (Step of mounting the semiconductor layer 20) The method for manufacturing a light-emitting device according to the first embodiment may further include a step of mounting the semiconductor layer 20.

[0050] As shown in FIG. 14, in the step of mounting the semiconductor layer 20, the semiconductor layer 20 is mounted so that the surface opposite to the surface peeled off from the substrate 10 of the semiconductor layer 20 faces the wiring substrate 70. In the example shown in FIG. 14, the semiconductor layer 20 including the light-transmitting layer 60 and the covering member 30 is mounted on the wiring substrate 70. In the example shown in FIG. 14, one semiconductor layer 20 is mounted on the wiring substrate 70. However, the present invention is not limited to this, and a plurality of semiconductor layers 20 may be mounted on the wiring substrate 70. When a plurality of semiconductor layers 20 are mounted on the wiring substrate 70, in adjacent semiconductor layers 20, the covering member 30 covering the side surface of one semiconductor layer 20 may be separated from the covering member 30 covering the side surface of the other semiconductor layer 20. Alternatively, in adjacent semiconductor layers 20, the covering member 30 covering the side surface of one semiconductor layer 20 may be connected to the covering member 30 covering the side surface of the other semiconductor layer 20.

[0051] (Wiring substrate) The wiring substrate 70 has, for example, a base material and wirings disposed on the base material. The shape of the wiring substrate 70 is, for example, a flat plate shape.

[0052] (Step of arranging the light-reflective member 80) The manufacturing method of the light-emitting device according to the first embodiment can further include a step of arranging the light-reflective member 80.

[0053] As shown in FIG. 15, in the step of arranging the light-reflective member 80, the light-reflective member 80 is arranged on the side surface of the covering member 30, the side surface of the light-transmitting layer 60, and the surface of the wiring substrate 70 on which the semiconductor layer 20 is mounted.

[0054] The steps of cutting the above-described covering member 30, arranging the light-transmitting layer 60, mounting the semiconductor layer 20, and arranging the light-reflective member 80 are performed after the peeling step. In the manufacturing method of the light-emitting device according to the first embodiment, the steps of cutting the covering member 30, arranging the light-transmitting layer 60, mounting the semiconductor layer 20, and arranging the light-reflective member 80 are performed in this order. However, it is not limited thereto, and the steps of cutting the covering member 30, mounting the semiconductor layer 20, arranging the light-transmitting layer 60, and arranging the light-reflective member 80 may be performed in this order. Note that at least one of the step of arranging the light-transmitting layer 60 and the step of arranging the light-reflective member 80 can be omitted.

[0055] (Light-reflective member) The light-reflective member 80 includes, for example, a resin and a light-reflective material. The resin is, for example, a silicone resin, an epoxy resin, a polyimide resin, or a modified resin thereof. The light-reflective material is, for example, titanium oxide, aluminum oxide, or silicon oxide.

[0056] Thus, in the manufacturing method of the light-emitting device according to the first embodiment, the light-emitting device 100 is manufactured through the steps of preparation, peeling, cutting the covering member 30, arranging the light-transmitting layer 60, mounting the semiconductor layer 20, and arranging the light-reflective member 80.

[0057] <Second Embodiment> FIG. 16 is a schematic plan view showing a laminate of a manufacturing method of a light-emitting device according to the second embodiment. FIG. 17 is a schematic cross-sectional view showing a preparation step of a method for manufacturing a light-emitting device according to the second embodiment. FIG. 18 is a schematic cross-sectional view showing a peeling step of a method for manufacturing a light-emitting device according to the second embodiment. FIG. 19 is a schematic cross-sectional view showing a peeling step of a method for manufacturing a light-emitting device according to the second embodiment. FIG. 20 is a schematic cross-sectional view showing a step of disposing a light-transmitting layer 60 in a method for manufacturing a light-emitting device according to the second embodiment. FIG. 17 is a schematic cross-sectional view taken along line XVII-XVII shown in FIG. 16. FIGS. 18 to 20 are schematic cross-sectional views corresponding to the position of line XVII-XVII of FIG. 16 at each step. As shown in FIGS. 16 to 20, in the method for manufacturing a light-emitting device according to the second embodiment, in the preparation step, a laminate 50A in which one semiconductor layer 20 is disposed on one substrate 10 is prepared. In the peeling step, the first step and the second step are performed on the laminate 50A. After mounting the semiconductor layer 20 on the wiring substrate 70, the method is the same as the method for manufacturing a light-emitting device according to the first embodiment, except that the peeling step is performed. For this reason, redundant descriptions may be omitted.

[0058] As shown in FIGS. 16 and 17, in the preparation step of the method for manufacturing a light-emitting device according to the second embodiment, a laminate 50A including one semiconductor layer 20 is prepared. In the laminate 50A, instead of the support 40, the semiconductor layer 20 and the covering member 30 are supported by the wiring substrate 70. That is, in the laminate 50A, the semiconductor layer 20 and the covering member 30 are respectively located between the substrate 10 and the wiring substrate 70.

[0059] As shown in FIGS. 18 and 19, in the peeling step of the manufacturing method of the light-emitting device according to the second embodiment, the first step and the second step are performed on the laminate 50A. In the example shown in FIG. 18, in the first step, the first region 12a is irradiated with the laser light LT1 having the first irradiation intensity using the first mask MS1 having the first light-transmitting portion corresponding to the first region. In the example shown in FIG. 19, in the second step, the first region 12a and the second region 12b are irradiated with the laser light LT2 having the second irradiation intensity without using a mask (the second mask MS2). However, in the second step, a mask (the second mask MS2) may be used.

[0060] Also in the manufacturing method of the light-emitting device according to the second embodiment, the same effects as those of the manufacturing method of the light-emitting device according to the first embodiment can be obtained.

[0061] In the manufacturing method of the light-emitting device according to the second embodiment, the steps of cutting the covering member 30, mounting the semiconductor layer 20, and arranging the light-reflective member 80 can be omitted. As shown in FIG. 20, in the manufacturing method of the light-emitting device according to the second embodiment, after the peeling step, a step of arranging the light-transmitting layer 60 can be performed.

[0062] In this way, in the manufacturing method of the light-emitting device according to the second embodiment, the light-emitting device 100A is manufactured by the preparation step, the peeling step, and the step of arranging the light-transmitting layer 60.

[0063] In the examples shown in FIGS. 16 to 20, the case where the peeling step is performed on the laminate 50A including one semiconductor layer 20 has been described. However, in the manufacturing method of the light-emitting device according to the second embodiment, the peeling step may be performed on the laminate 50A including a plurality of semiconductor layers 20.

[0064] The embodiment may include the following configurations.

[0065] (Configuration 1) A step of preparing a laminate having a first surface and a second surface located on the side opposite to the first surface, wherein the second surface has a substrate having a first region and a second region located outside the first region, a semiconductor layer disposed in the first region, and a covering member disposed in the second region, covering the second region, and surrounding the outer periphery of the semiconductor layer in a plan view. A step of irradiating the laminate with a laser beam from the first surface side of the substrate to peel the substrate from the semiconductor layer and the covering member. Comprising: The peeling step is: A first step of irradiating the first region with the laser beam having a first irradiation intensity to peel the substrate from the semiconductor layer. A second step that is performed after the first step and irradiates at least the second region with the laser beam having a second irradiation intensity lower than the first irradiation intensity to peel the substrate from the covering member. A method for manufacturing a light-emitting device having the above.

[0066] (Configuration 2) The method for manufacturing a light-emitting device according to Configuration 1, wherein in the second step, the laminate is irradiated with the laser beam in the first region and the second region.

[0067] (Configuration 3) In the first step, a first mask having a first light-transmitting portion corresponding to the first region and a first light-shielding portion located outside the first light-transmitting portion is prepared, and the laminate is irradiated with the laser beam through the first mask. In the second step, a second mask having a second light-transmitting portion whose outer shape in a plan view is larger than the first light-transmitting portion and a second light-shielding portion located outside the second light-transmitting portion is prepared, and the laminate is irradiated with the laser beam through the second mask. The method for manufacturing a light-emitting device according to Configuration 2.

[0068] (Configuration 4) The covering member contains a resin and a light-reflecting material. The method for manufacturing a light-emitting device according to any one of Configurations 1 to 3.

[0069] (Configuration 5) In the peeling step, the second irradiation intensity is 1 / 8 or more and 1 / 4 or less of the first irradiation intensity, The manufacturing method of the light-emitting device according to any one of Configurations 1 to 4.

[0070] (Configuration 6) The laminate has a plurality of the semiconductor layers, The plurality of the semiconductor layers are arranged in a plurality of rows, After performing the peeling step on the semiconductor layers arranged in the rows other than both ends, the peeling step is performed on the semiconductor layers arranged in the rows at both ends, The manufacturing method of the light-emitting device according to any one of Configurations 1 to 5.

[0071] As described above, according to the embodiment, a manufacturing method of a light-emitting device capable of improving the yield is provided.

[0072] Each of the above-described embodiments is an example embodying the present invention, and the present invention is not limited to these embodiments. For example, in each of the above-described embodiments, those obtained by adding, deleting, or changing some components or steps are also included in the present invention. Also, each of the above-described embodiments can be implemented in combination with each other.

Industrial Applicability

[0073] The present invention can be suitably used for manufacturing LEDs and the like.

Explanation of Signs

[0074] 10: Substrate 11: First surface 12: Second surface 12a: First region 12b: Second region 15: Gap 20: Semiconductor layer 21: Electrode 30: Coating member 40: Support 50, 50A: Laminate 60: Light-transmitting layer 70: Wiring board 80: Light-reflective member 100, 100A: Light-emitting device C1~C3: Column LS: Laser light irradiation device LT1, LT2: Laser light LU: Lens MS1: First mask MS1a: First light-transmitting part MS1b: First light-shielding part MS2: Second mask MS2a: Second light-transmitting part MS2b: Second light-shielding part

Claims

1. A step of preparing a laminate having a first surface and a second surface located on the opposite side of the first surface, wherein the second surface has a substrate having a first region and a second region located outside the first region, a semiconductor layer disposed in the first region, and a covering member disposed in the second region, covering the second region, and surrounding the outer periphery of the semiconductor layer in a plan view; A step of irradiating the laminate with a laser beam from the first surface side of the substrate to peel the substrate from the semiconductor layer and the covering member; Comprising: The peeling step is: A first step of irradiating the first region with the laser beam having a first irradiation intensity to peel the substrate from the semiconductor layer; A second step that is performed after the first step and irradiates at least the second region with the laser beam having a second irradiation intensity lower than the first irradiation intensity to peel the substrate from the covering member; A method for manufacturing a light-emitting device having the above.

2. The method for manufacturing a light-emitting device according to claim 1, wherein in the second step, the laser beam is irradiated to the first region and the second region.

3. In the first step, a first mask having a first light-transmitting portion corresponding to the first region and a first light-shielding portion located outside the first light-transmitting portion is prepared, and the laminate is irradiated with the laser beam through the first mask. In the second step, a second mask having a second light-transmitting portion whose outer shape in a plan view is larger than the first light-transmitting portion and a second light-shielding portion located outside the second light-transmitting portion is prepared, and the laminate is irradiated with the laser beam through the second mask. The method for manufacturing a light-emitting device according to claim 2.

4. The method for manufacturing a light-emitting device according to claim 1, wherein the covering member includes a resin and a light reflecting material.

5. In the peeling step, the second irradiation intensity is 1 / 8 or more and 1 / 4 or less of the first irradiation intensity. The method for manufacturing a light-emitting device according to claim 1.

6. The laminate has a plurality of the semiconductor layers, The plurality of semiconductor layers are arranged in a plurality of rows, After performing the peeling step on the semiconductor layers arranged in the rows other than both ends, the peeling step is performed on the semiconductor layers arranged in the rows at both ends. The method for manufacturing a light-emitting device according to any one of claims 1 to 5.

Images