Light-emitting device

Abstract

To improve the light extraction efficiency of a light-emitting device having a luminance distribution on its light-emitting surface.SOLUTION: A light-emitting device according to an embodiment of the present disclosure includes a wavelength conversion member having an upper surface, a lower surface opposite the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and opposite the first side surface, a light-emitting portion disposed on the first side surface of the lower surface of the wavelength conversion member and having a light-emitting layer, and a light adjustment member disposed on the second side surface of the upper surface of the wavelength conversion member and not overlapping with the light-emitting layer in a top view.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device.

Background Art

[0002] As a light source of a vehicle lamp, a light-emitting element such as an LED (Light Emitting Diode) is used. Patent Document 1 discloses a light-emitting device having a luminance distribution on a light-emitting surface by combining a plurality of light-emitting elements having different areas.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to improve the light extraction efficiency of a light-emitting device having a luminance distribution on a light-emitting surface.

Means for Solving the Problems

[0005] A light-emitting device according to an embodiment of the present disclosure includes a wavelength conversion member having an upper surface, a lower surface located on the opposite side of the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and located on the opposite side of the first side surface; a light-emitting portion disposed on the side of the first side surface on the lower surface of the wavelength conversion member and having a light-emitting layer; and a light adjustment member disposed on the side of the second side surface on the upper surface of the wavelength conversion member and not overlapping the light-emitting layer in a top view.

Effects of the Invention

[0006] According to an embodiment of the present disclosure, the light extraction efficiency of a light-emitting device having a luminance distribution on a light-emitting surface can be improved.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, with reference to the drawings, a light-emitting device according to an embodiment of the present disclosure will be described in detail. However, the embodiments shown below are examples of light-emitting devices for embodying the technical idea of the embodiments, and are not limited thereto. In addition, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of the present disclosure only thereto without specific description, but are merely illustrative examples. Note that the sizes, positional relationships, etc. of the members shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same names and reference numerals indicate the same or similar members, and detailed descriptions will be omitted as appropriate. In some cases, an end view showing only the cut surface is used as a cross-sectional view.

[0009] In the figures shown below, the directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are mutually orthogonal directions. The direction in which the arrow points in the X-axis direction is denoted as the +X direction or the +X side, and the opposite direction of the +X direction is denoted as the -X direction or the -X side. The direction in which the arrow points in the Y-axis direction is denoted as the +Y direction or the +Y side, and the opposite direction of the +Y direction is denoted as the -Y direction or the -Y side. The direction in which the arrow points in the Z-axis direction is denoted as the +Z direction or the +Z side, and the opposite direction of the +Z direction is denoted as the -Z direction or the -Z side. Also, in the terms of the embodiments, the top view means looking at the object from the +Z direction. However, these do not limit the orientation during the use of the light-emitting device, and the orientation of the light-emitting device is arbitrary. Further, in the embodiments, the surface in the +Z direction (that is, the surface of the object when viewed from the +Z direction) is defined as the "upper surface", and the surface in the -Z direction (that is, the surface of the object when viewed from the -Z direction) is defined as the "lower surface". In the embodiments shown below, along the X-axis, Y-axis, and Z-axis means that the object has an inclination within a range of ±10° with respect to these axes. Also, in the embodiments, orthogonality may include an error within ±10° with respect to 90°.

[0010] In the present disclosure, unless otherwise specified, regarding polygons such as rectangles, those having shapes processed with rounding, chamfering, corner rounding, or filleting at the corners of the polygon are also included in the term "polygon". Also, not limited to the corners (i.e., the ends of the sides), those having shapes processed in the middle part of the sides are also referred to as "polygons" in the same way. That is, shapes with partial processing while leaving the polygon as a base are included in the interpretation of the "polygon" described in the present disclosure.

[0011] This also applies to terms representing specific shapes such as trapezoids, circles, and concavities and convexities, not limited to polygons. This also applies to terms regarding each side forming the shape. That is, even if a side has been processed at a corner or in the middle part, the processed part is included in the interpretation of the "side".

[0012] In addition, "cover" or "coat" includes not only the case of direct contact but also the case of covering indirectly, for example, via other members. Further, "arrange" includes not only the case of direct contact but also the case of arranging indirectly, for example, via other members.

[0013] [First Embodiment] <Overall Configuration Example of Light-Emitting Device 1> With reference to FIGS. 1 and 2, an example of the overall configuration of the light-emitting device 1 according to the first embodiment will be described. FIG. 1 is a top view schematically showing an example of the overall configuration of the light-emitting device 1 according to the first embodiment. FIG. 2 is a cross-sectional view schematically showing a cross-section taken along line II-II of FIG. 1.

[0014] In the example shown in FIGS. 1 and 2, the light-emitting device 1 includes a wavelength conversion member 10, a light-emitting element 20 including a light-emitting part 21 and a translucent member 30, and a light adjustment member 40. However, the light-emitting element 20 may not include the translucent member 30. When the light-emitting element 20 does not include the translucent member 30, the light-emitting device 1 includes the wavelength conversion member 10, the light-emitting part 21, and the light adjustment member 40. The light-emitting device 1 can further include a light reflection film 50, a covering member 60, a wiring substrate 70, and joining members 81, 82. Note that the light-emitting device 1 may not include the joining member 81.

[0015] <Wavelength Conversion Member 10> The configuration of the wavelength conversion member 10 will be described. The wavelength conversion member 10 converts the wavelength of at least a part of the light emitted by the light-emitting part 21. As shown in FIG. 2, the wavelength conversion member 10 has an upper surface 11, a lower surface 12, a first side surface 13a, and a second side surface 13b.

[0016] In the example shown in FIG. 2, the upper surface 11 has a first upper surface 11a and a second upper surface 11b. The first upper surface 11a is arranged on the +X side with respect to the second upper surface 11b. The second upper surface 11b is located below (that is, on the -Z side) the first upper surface 11a. In the wavelength conversion member 10, the thickness between the second upper surface 11b and the lower surface 12 is smaller than the thickness between the first upper surface 11a and the lower surface 12.

[0017] The first upper surface 11a and the second upper surface 11b are connected via the inner wall surface 14. As shown in FIG. 2, the inner wall surface 14 connects the outer edge on the -X side of the first upper surface 11a and the outer edge on the +X side of the second upper surface 11b. The upper surface 11 of the wavelength conversion member 10 has a stepped region formed by the first upper surface 11a, the inner wall surface 14, and the second upper surface 11b.

[0018] In the example shown in FIG. 2, the inner wall surface 14 is located on the -X side of the light emitting portion 21 in a top view. That is, the second upper surface 11b does not overlap with the light emitting portion 21 in a top view.

[0019] In the example shown in FIG. 2, the upper surface 11 of the wavelength conversion member 10 includes a plurality of regions having different positions in the Z-axis direction with respect to the lower surface 12, such as the first upper surface 11a and the second upper surface 11b. However, it is not limited thereto. For example, the upper surface 11 of the wavelength conversion member 10 may be a flat surface parallel to the X-axis direction and the Y-axis direction.

[0020] The first side surface 13a is disposed between the upper surface 11 and the lower surface 12. The first side surface 13a shown in FIG. 2 connects the outer edges on the +X side of the first upper surface 11a and the lower surface 12. The first side surface 13a is the +X side side surface of the wavelength conversion member 10. The second side surface 13b is disposed between the upper surface 11 and the lower surface 12 and is located on the opposite side of the first side surface 13a. The second side surface 13b shown in FIG. 2 connects the outer edges on the -X side of the second upper surface 11b and the lower surface 12. The second side surface 13b is the -X side side surface of the wavelength conversion member 10.

[0021] In the example shown in FIG. 1, the wavelength conversion member 10 has a rectangular shape in a top view. However, the wavelength conversion member 10 may have other shapes such as a circular shape or a polygonal shape in a top view.

[0022] The wavelength conversion member 10 contains a phosphor. Examples of the phosphor include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12:(Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu3(Al,Ga)5O 12 :(Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :(Ce), CCA-based phosphor (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphor (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphor (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphor (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphor (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), etc., oxynitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn Here, x satisfies 0 < x < 1.) or MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), etc., fluoride-based phosphors, quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 Here, FA and MA represent formamidinium and methylammonium, respectively.), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used.

[0023] For example, when the light from the light emitting unit 21 is blue light and the phosphor is a yttrium aluminum garnet phosphor (hereinafter referred to as "YAG phosphor") that is excited by the blue light and converted into yellow light, white light can be extracted from the light emitting device 1 by mixing the blue light emitted from the light emitting unit 21 and the yellow light wavelength-converted by the YAG phosphor.

[0024] The wavelength conversion member 10 may or may not contain a light diffusing substance. Examples of the light diffusing substance include titanium oxide, barium titanate, aluminum oxide, silicon oxide, and yttrium aluminum perovskite (YAP).

[0025] <Light emitting element 20> Next, the configuration of the light emitting element 20 will be described. The light emitting element 20 is a semiconductor light emitting element such as an LED (Light Emitting Diode) or an LD (Laser Diode). In the example shown in FIG. 2, the light emitting element 20 includes a translucent member 30, a light emitting unit 21 including a light emitting layer 212, a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26. The first electrode 22, the first pad electrode 23, the second pad electrode 24, the second electrode 25, and the insulating layer 26 are disposed on the lower surface side of the light emitting element 20 (that is, the lower surface side of the light emitting unit 21).

[0026] As shown in FIG. 1, the light emitting unit 21 overlaps the wavelength conversion member 10 in a top view. Specifically, the light emitting unit 21 is disposed on the side of the first side surface 13a on the lower surface 12 of the wavelength conversion member 10. That is, in the light emitting device 1, in a top view, the center of the light emitting unit 21 is located in the +X direction of the wavelength conversion member 10 from the center of the wavelength conversion member 10.

[0027] The light emitting unit 21 shown in FIG. 1 has a rectangular shape in a top view. However, the light emitting unit 21 may have other shapes such as a square, a circle, or a polygon in a top view.

[0028] The light-emitting part 21 includes a first semiconductor layer 211, a light-emitting layer 212, and a second semiconductor layer 213. The first semiconductor layer 211 is disposed on the lower surface side of the light-emitting layer 212. The second semiconductor layer 213 is disposed on the upper surface side of the light-emitting layer 212. That is, the light-emitting part 21 has at least one laminate arranged in the order of the second semiconductor layer 213, the light-emitting layer 212, and the first semiconductor layer 211 from the wavelength conversion member 10 side. The light-emitting layer 212 may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including a plurality of well layers. The first semiconductor layer 211 is a p-side semiconductor layer. The second semiconductor layer 213 is an n-side semiconductor layer.

[0029] Each of the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 may be a semiconductor layer made of a nitride semiconductor. The nitride semiconductor includes semiconductors of all compositions in which the composition ratios x and y are changed within their respective ranges in the chemical formula consisting of In x Al y Ga 1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1). The emission peak wavelength of the light-emitting layer 212 can be appropriately selected according to the purpose. The light-emitting layer 212 is configured to emit, for example, visible light or ultraviolet light.

[0030] When the structure including the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 is taken as one laminate, the light-emitting part 21 can include a plurality of laminates. In this case, for example, the plurality of laminates overlap in the Z-axis direction. The light-emitting part 21 may include well layers having different emission peak wavelengths or well layers having the same emission peak wavelength in the light-emitting layer 212 provided in each of the plurality of laminates. Note that the case where the emission peak wavelengths are the same includes the case where there is a variation of about several nm.

[0031] The combination of the emission peak wavelengths of the plurality of stacked bodies can be appropriately selected. For example, when the light emitting unit 21 includes two stacked bodies, examples of the combination of the light emitted from the light emitting layers of the respective stacked bodies include combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, ultraviolet light and blue light, blue light and green light, blue light and red light, or green light and red light. For example, when the light emitting unit 21 includes three stacked bodies, an example of the combination of the light emitted from the light emitting layers of the respective stacked bodies is a combination of blue light, green light, and red light.

[0032] In the example shown in FIG. 2, the light emitting unit 21 overlaps with the first upper surface 11a of the wavelength conversion member 10 and does not overlap with the second upper surface 11b in a top view. Thereby, the light emitting device 1 can make the amount of light emitted from the first upper surface 11a larger than the amount of light emitted from the second upper surface 11b. For this reason, a light emitting device having a luminance distribution including a high-luminance region and a low-luminance region on the light emitting surface can be obtained. When such a light emitting device 1 is used for an in-vehicle headlight, it becomes possible to arrange the high-luminance region in a desired region of the irradiation region. For this reason, it becomes easy to obtain a desired light distribution without using a complicated optical design such as a reflector or a lens. Thereby, the headlight can be miniaturized and the design property of the headlight can be improved. Note that, on the light emitting surface of the light emitting device 1, in a top view, the region corresponding to the first upper surface 11a of the wavelength conversion member 10 is the high-luminance region, and the region corresponding to the upper surface of the light adjustment member 40 is the low-luminance region. Further, the average luminance of the low-luminance region is 20% or more and 80% or less of the average luminance of the high-luminance region.

[0033] In a top view, the light-emitting part 21 not only overlaps with the first top surface 11a of the wavelength conversion member 10 and does not overlap with the second top surface 11b. In a top view, the light-emitting part 21 can include a light-emitting part that overlaps with the first top surface 11a of the wavelength conversion member 10 (hereinafter sometimes referred to as the "first light-emitting part") and a light-emitting part that overlaps with the second top surface 11b of the wavelength conversion member 10 (hereinafter sometimes referred to as the "second light-emitting part"). The first light-emitting part and the second light-emitting part each include one or more light-emitting layers. When the light-emitting device 1 includes the first light-emitting part and the second light-emitting part as the light-emitting parts, the number of light-emitting layers included in the first light-emitting part is preferably larger than the number of light-emitting layers of the second light-emitting part.

[0034] The first electrode 22 is electrically connected to the first semiconductor layer 211. The first electrode 22 is disposed on the lower surface of the first semiconductor layer 211. When the first semiconductor layer 211 is a p-side semiconductor layer, the first electrode 22 is a p-side electrode.

[0035] Examples of the material constituting the first electrode 22 include single metal materials such as gold (Au), silver (Ag), aluminum (Al), nickel (Ni), rhodium (Rh), copper (Cu), titanium (Ti), platinum (Pt), palladium (Pd), molybdenum (Mo), chromium (Cr), tungsten (W), etc., or alloy materials containing these metals. Note that the first electrode 22 may have a single-layer structure composed of a single metal layer, or may have a stacked structure in which a plurality of metal layers are stacked in the Z-axis direction.

[0036] As the material constituting the first electrode 22, a material with a high reflectivity such as Ag or Al is preferable. Since the first electrode 22 is made of a material with a high reflectivity, for example, light emitted downward (i.e., the -Z side) from the light-emitting layer 212 can be reflected upward (i.e., the +Z side). That is, the light reaching the first electrode 22 can be reflected toward the wavelength conversion member 10. Thereby, the light extraction efficiency in the light-emitting device 1 can be improved. The "reflectivity" in this specification refers to the reflectivity at the emission peak wavelength of the light emitted from the light-emitting layer 212.

[0037] Further, the first electrode 22 may be composed of a transparent conductive layer such as indium tin oxide (ITO). The first electrode 22 may have a single-layer structure of only the transparent conductive layer, or may have a laminated structure of the metal layer (for example, Ag or Al) described above and the transparent conductive layer in combination.

[0038] The second electrode 25 is electrically connected to the second semiconductor layer 213. As shown in FIG. 2, the second electrode 25 penetrates through the insulating layer 26 and the first electrode 22 and extends to the second semiconductor layer 213. Although not shown, insulating layers are disposed between the second electrode 25 and the light-emitting layer 212, between the second electrode 25 and the first semiconductor layer 211, and between the second electrode 25 and the first electrode 22, respectively. When the second semiconductor layer 213 is an n-side semiconductor layer, the second electrode 25 is an n-side electrode.

[0039] The material constituting the second electrode 25 may be the same metal material or alloy material as the first electrode 22, or may be a metal material or alloy material different from the first electrode 22. Further, the second electrode 25 may have a single-layer structure composed of a single metal layer, or may have a laminated structure in which a plurality of metal layers are laminated in the Z-axis direction.

[0040] In the example shown in FIG. 2, the first pad electrode 23 is disposed on the lower surface of the first electrode 22. Further, the first pad electrode 23 penetrates through the insulating layer 26 in the Z-axis direction and extends to the lower side (that is, the -Z side) of the insulating layer 26. The material constituting the first pad electrode 23 is, for example, the same material as the second electrode 25.

[0041] The second pad electrode 24 is disposed on the lower surface of the second electrode 25. Further, the second pad electrode 24 may be joined to the lower surface of the insulating layer 26. The material constituting the second pad electrode 24 is, for example, the same material as the first pad electrode 23.

[0042] In the example shown in FIG. 2, the insulating layer 26 is disposed between the first electrode 22 and the second pad electrode 24. By interposing the insulating layer 26 between the first electrode 22 and the second pad electrode 24, a short circuit between the first electrode 22 and the second pad electrode 24 can be reduced.

[0043] The light-transmissive member 30 is a member that supports the light-emitting part 21. The light-transmissive member 30 is disposed between the wavelength conversion member 10 and the light-emitting part 21. Here, the "light-transmissive property" means, for example, that the transmittance with respect to the light emitted from the light-emitting layer 212 is 80% or more. Examples of the substance constituting the light-transmissive member 30 include insulating materials such as sapphire, spinel, and glass, and semiconductor materials such as aluminum nitride and silicon carbide.

[0044] As shown in FIG. 2, the light-transmissive member 30 may be arranged so as to extend to a position overlapping with the light adjusting member 40 in a top view. That is, the light-transmissive member 30 may overlap with each of the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10 in a top view. By arranging the light-transmissive member 30 so as to extend to a position overlapping with the light adjusting member 40 in a top view, the light emitted from the light-emitting layer 212 can be propagated further to the side of the second side surface 13b of the wavelength conversion member 10. Note that the light-transmissive member 30 is not limited to overlapping with the light adjusting member 40 in a top view, and may not overlap with the light adjusting member 40. That is, the light-transmissive member 30 is not limited to overlapping with each of the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10 in a top view, and the light-transmissive member 30 may overlap only with the first upper surface 11a of the wavelength conversion member 10 in a top view.

[0045] The light-transmissive member 30 has an upper surface, a lower surface, and one or more side surfaces connecting the outer edges of the upper surface and the lower surface. In the example shown in FIG. 2, in the X-axis direction, the position of the -X side surface of the light-transmissive member 30 coincides with the position of the -X side surface of the wavelength conversion member 10. Also, in the X-axis direction, the position of the +X side surface of the light-transmissive member 30 coincides with the position of the +X side surface of the wavelength conversion member 10.

[0046] In the example shown in FIG. 1, the light-transmissive member 30 has a rectangular shape in a top view. However, the light-transmissive member 30 may have other shapes such as a circular shape or a polygonal shape in a top view.

[0047] The upper surface of the light-transmissive member 30 and the lower surface of the wavelength conversion member 10 may be directly joined, or may be joined via another member such as a light-transmissive adhesive member.

[0048] <Light adjustment member 40> Next, the configuration of the light adjustment member 40 will be described. The light adjustment member 40 is a member for adjusting optical characteristics such as the amount and / or chromaticity of light emitted from the low-luminance region of the light-emitting device 1. The light adjustment member 40 is disposed on the side of the second side surface 13b on the upper surface 11 of the wavelength conversion member 10. In the example shown in FIG. 2, the light adjustment member 40 does not overlap with the light-emitting portion 21 in a top view. In the light-emitting device 1, in a top view, the center of the light adjustment member 40 is located in the -X direction of the wavelength conversion member 10 from the center of the wavelength conversion member 10.

[0049] In the example shown in FIG. 2, the light adjustment member 40 is disposed on the second upper surface 11b of the wavelength conversion member 10. In this case, in the Z-axis direction, it is preferable that the position of the upper surface of the light adjustment member 40 coincides with the position of the first upper surface 11a of the wavelength conversion member 10. Thereby, miniaturization of the light-emitting device 1 can be achieved. Further, alignment with a lens disposed above the light-emitting device 1 becomes easy. Note that, in the Z-axis direction, the position of the upper surface of the light adjustment member 40 may be below (that is, on the -Z-axis direction side) the position of the first upper surface 11a of the wavelength conversion member 10.

[0050] The light adjustment member 40 has an upper surface, a lower surface located on the opposite side of the upper surface, and a plurality of side surfaces disposed between the upper surface and the lower surface. In the examples shown in FIGS. 1 and 2, the wavelength conversion member 10 is disposed on one of the plurality of side surfaces of the light adjustment member 40, and the wavelength conversion member 10 is not disposed on the remaining side surfaces of the plurality of side surfaces of the light adjustment member 40. That is, the wavelength conversion member 10 is covered on the side surface of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10 among the plurality of side surfaces of the light adjustment member 40. And the wavelength conversion member 10 is not covered on the surfaces other than the side surface of the plurality of side surfaces of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10. Hereinafter, "the surfaces other than the side surface of the plurality of side surfaces of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10" may be referred to as the outer side surfaces of the light adjustment member 40.

[0051] The light adjusting member 40 transmits part of the light reaching from the light emitting layer 212 of the light emitting unit 21 and reflects the other part. Examples of the light adjusting member 40 include a resin containing particles of a light reflective substance. Examples of the resin include a resin or a hybrid resin containing one or more of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, a phenol resin, a bismaleimide triazine resin, and a polyphthalamide resin. Among them, a resin containing a silicone resin having excellent heat resistance, electrical insulation, and flexibility as a base material is preferable. Examples of the light reflective substance include titanium oxide, silicon oxide, zirconium oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, and combinations thereof. Among them, titanium oxide is preferable because it is relatively stable against moisture and has a high refractive index. Another example of the light adjusting member 40 includes a sintered body including a base member made of an inorganic material and particles of a light reflective substance contained in the base member. The base member can be composed of, for example, aluminum oxide, yttrium oxide, zirconium oxide, magnesium oxide, and silicon oxide. The particles of the light reflective substance can use the materials described above. Further, another example of the light adjusting member 40 includes an inorganic member including a mixture of boron nitride, silicon oxide, and potassium hydroxide.

[0052] The concentration of the light reflective substance in the light adjusting member 40 is preferably, for example, 60% by mass or more and 70% by mass or less. The concentration of the light reflective substance indicates the ratio of the light reflective substance in the light adjusting member 40. The reflectance of the light adjusting member 40 is preferably, for example, 1% or more and 95% or less.

[0053] The light adjusting member 40 may or may not contain a phosphor. The phosphor contained in the light adjusting member 40 may be the same as or different from the phosphor contained in the wavelength conversion member 10. By the light adjusting member 40 containing a phosphor, the difference between the chromaticity of the light emitted from the first upper surface 11a of the wavelength conversion member 10 and the chromaticity of the light emitted from the upper surface of the light adjusting member 40 can be reduced.

[0054] <Light reflecting film 50> Next, the configuration of the light reflecting film 50 will be described. The light reflecting film 50 is disposed on the lower surface of the light transmissive member 30. More specifically, the light reflecting film 50 is disposed on the lower surface of the light transmissive member 30 in a region where the light transmissive member 30 overlaps with the light adjusting member 40 in a top view. That is, the light reflecting film 50 overlaps with the second upper surface 11b of the wavelength conversion member 10 in a top view. Further, the light reflecting film 50 is disposed at a position spaced apart from the light emitting portion 21 on the lower surface of the light transmissive member 30.

[0055] Examples of the light reflecting film 50 include a metal film with a high reflectivity such as Ag or Al, and an optical thin film such as DBR.

[0056] Since the light reflecting film 50 is disposed in a region that overlaps with the light adjusting member 40 in a top view, the light that reaches the light reflecting film 50 can be reflected toward the light adjusting member 40. Thereby, the light extraction efficiency of the light emitting device 1 can be improved.

[0057] <Coating member 60> Next, the configuration of the coating member 60 will be described. The coating member 60 preferably has light-shielding properties, and more preferably has light-reflecting properties. When the coating member 60 has light-reflecting properties, an example of the substance constituting the coating member 60 is a resin containing particles of a light-reflecting substance. The resin contained in the coating member 60 may be the same as or different from the resin contained in the light adjustment member 40. The coating member 60 preferably has a reflectivity of 60% or more, and more preferably 90% or more, at the emission peak wavelength of the light emitted from the light-emitting layer 212. The reflectivity of the coating member 60 can be made higher than the reflectivity of the light adjustment member 40.

[0058] The coating member 60 is, for example, a white resin containing titanium oxide and silicone resin. The coating member 60 is not limited to being a white resin, and may be an inorganic member containing a mixture of boron nitride, silicon oxide, and potassium hydroxide. Further, the coating member 60 may be an inorganic member including a sintered body of a paste containing titanium oxide, aluminum oxide, and an acrylic resin, and silicon oxide or aluminum oxide formed on the surface or gaps of the sintered body.

[0059] As shown in FIG. 2, the coating member 60 covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. Also, the coating member 60 exposes the upper surface 11 of the wavelength conversion member 10. In the example shown in FIG. 2, the coating member 60 exposes the first upper surface 11a of the wavelength conversion member 10. Further, the coating member 60 exposes the upper surface of the light adjustment member 40.

[0060] By the coating member 60 covering the first side surface 13a and the second side surface 13b of the wavelength conversion member 10, the light reaching the first side surface 13a and the second side surface 13b can be reflected toward the upper surface 11 of the wavelength conversion member 10. Thereby, the light extraction efficiency of the light-emitting device 1 can be improved.

[0061] The covering member 60 preferably covers the lower surface of the light-transmitting member 30 in a region 30N that does not overlap with the light reflection film 50 in a top view. Thereby, the light that has reached the region 30N on the lower surface of the light-transmitting member 30 can be reflected toward the second upper surface 11b of the wavelength conversion member 10.

[0062] The covering member 60 preferably covers the outer surface of the light adjustment member 40. Thereby, the light that has reached the outer surface of the light adjustment member 40 can be reflected toward the second upper surface 11b of the wavelength conversion member 10. From these, the light extraction efficiency of the light-emitting device 1 can be further improved.

[0063] <Wiring substrate 70> Next, the configuration of the wiring substrate 70 will be described. The wiring substrate 70 is disposed below (i.e., on the -Z side) the light-emitting portion 21 and the light reflection film 50. In the example shown in FIG. 2, the wiring substrate 70 has a rectangular shape in a top view. However, the wiring substrate 70 may have other shapes such as a circular shape or a polygonal shape in a top view.

[0064] As shown in FIG. 2, the wiring substrate 70 includes a base material 71, a first metal layer 72, and a second metal layer 73. The base material 71 is the base material of the wiring substrate 70. The base material 71 has a rectangular shape in a top view. However, the base material 71 may have other shapes such as a circular shape or a polygonal shape in a top view. The base material 71 is preferably composed of a ceramic having excellent heat dissipation properties such as aluminum nitride, aluminum oxide, silicon carbide, or silicon nitride, or a resin having excellent heat dissipation properties such as glass epoxy.

[0065] The first metal layer 72 is disposed on the upper surface of the base material 71. In the example shown in FIG. 2, the first metal layer 72 includes two metal layers arranged in the X-axis direction and spaced apart from each other. The first metal layer 72 is not limited to including two metal layers, and may be a single metal layer. Also, the number of metal layers included in the first metal layer 72 may or may not match the number of the joining members 81 described later. The first metal layer 72 may have a single-layer structure composed of a single metal layer, or may have a laminated structure in which a plurality of metal layers are laminated in the Z-axis direction. Note that the upper surface of the base material 71 is an example of the upper surface of the wiring substrate 70.

[0066] As shown in FIG. 2, each first metal layer 72 is respectively joined to the lower surfaces of a plurality of joining members 81. The first metal layer 72 functions as a joining layer for improving the joinability between the joining member 81 and the base material 71. Also, the first metal layer 72 can release the heat generated in the wavelength conversion member 10 and / or the light emitting portion 21 and transmitted to the joining member 81 to the base material 71 side.

[0067] Examples of the material constituting the first metal layer 72 include single metal materials such as Au, Ag, Al, Ni, Rh, Cu, Ti, Pt, Pd, Mo, Cr, W, etc., or alloy materials containing these metals.

[0068] The second metal layer 73 is disposed at a position separated from the first metal layer 72 on the upper surface of the base material 71. The second metal layer 73 shown in FIG. 2 includes two metal layers 73a and 73b arranged in the X-axis direction and spaced apart from each other. The second metal layer 73a is electrically connected to the first semiconductor layer 211 via the joining member 82a, the first pad electrode 23, and the first electrode 22. The second metal layer 73b is electrically connected to the second semiconductor layer 213 via the joining member 82b, the second pad electrode 24, and the second electrode 25.

[0069] The second metal layer 73 is electrically connected to an external power source. The current from the external power source is supplied to the light-emitting unit 21 via the second metal layer 73. The light-emitting unit 21 performs a light-emitting operation by the current supplied via the second metal layer 73. The material constituting the second metal layer 73 may be the same as or different from the material constituting the first metal layer 72. Also, the second metal layer 73 may have a single-layer structure composed of a single metal layer, or may have a laminated structure in which a plurality of metal layers are laminated in the Z-axis direction.

[0070] The wiring substrate 70 may or may not include a metal layer electrically connected to the first metal layer 72 on the lower surface of the base material 71. Similarly, the wiring substrate 70 may or may not include a metal layer electrically connected to the second metal layer 73 on the lower surface of the base material 71.

[0071] <Bonding members 81, 82> The bonding member 81 connects the first metal layer 72 and the light reflection film 50. Thereby, the possibility that the wavelength conversion member 10 is disposed inclined with respect to the wiring substrate 70 can be reduced. The bonding member 81 is preferably composed of a material with high heat dissipation efficiency. By connecting the first metal layer 72 and the light reflection film 50 via the bonding member 81, the heat dissipation efficiency of the light-emitting device 1 can be improved. Note that the bonding member 81 is an example of the "first bonding member". The bonding member 81 is not limited to being connected to both the first metal layer 72 and the light reflection film 50, and may not be connected to either one of the first metal layer 72 and the light reflection film 50.

[0072] Two bonding members 81 are shown in FIG. 2. The two bonding members 81 are respectively bonded to the two first metal layers 72. However, the number of bonding members 81 bonded to the first metal layer 72 is not limited to two, and may be one or three or more.

[0073] The joining member 81 includes, for example, at least one of a single metal material and an alloy material. The metal material and alloy material constituting the joining member 81 may be the same as or different from the metal material and alloy material constituting the first metal layer 72. When the joining member 81 and the first metal layer 72 are made of the same material, the joinability between the joining member 81 and the first metal layer 72 can be improved. The joining member 81 may be made of another substance such as a ceramic with high heat dissipation efficiency.

[0074] The joining member 81 may be joined to the light reflection film 50 via the adhesive layer 85. The adhesive layer 85 is composed of, for example, a substance with high heat dissipation efficiency such as a metal material or an alloy material. By disposing the adhesive layer 85 between the joining member 81 and the light reflection film 50, the joinability between the joining member 81 and the light reflection film 50 can be improved. However, the upper surface of the joining member 81 and the lower surface of the light reflection film 50 may be directly joined. In the case of the first embodiment, the adhesive layer 85 may be composed of a conductive substance or a non-conductive substance. In the case of the second embodiment described later, the adhesive layer 85 is composed of a conductive substance.

[0075] The joining member 82 electrically connects the second metal layer 73 and the light emitting portion 21. Two joining members 82a and 82b are shown in FIG. 2. The joining member 82a electrically connects the second metal layer 73a and the first semiconductor layer 211 through the first pad electrode 23 and the first electrode 22. The joining member 82b electrically connects the second metal layer 73b and the second semiconductor layer 213 through the second pad electrode 24 and the second electrode 25.

[0076] The joining member 82 includes at least one of a metal material and an alloy material. By connecting the second metal layer 73 of the wiring substrate 70 and the light emitting portion 21 via the joining member 82, the electrical conductivity of the current path including the second metal layer 73 and the light emitting portion 21 can be ensured.

[0077] <An example of the action> Next, with reference to FIG. 3, an example of the operation of the light-emitting device 1 according to the first embodiment will be described. FIG. 3 is a schematic cross-sectional view for explaining an example of the operation of the light-emitting device 1 according to the first embodiment.

[0078] As shown in FIG. 3, light L1 traveling, for example, upward (i.e., the +Z side) from the light-emitting layer 212 and light L2 traveling, for example, to an obliquely upper region on the -X side with respect to the light-emitting layer 212 are emitted. After passing through the inside of the translucent member 30 and the wavelength conversion member 10, the light L1 is extracted from the first upper surface 11a of the wavelength conversion member 10.

[0079] The light L2 reaches, for example, the lower surface of the light adjustment member 40. Here, a part of the light L2 that has reached the lower surface of the light adjustment member 40, i.e., light L21, enters the light adjustment member 40 and is extracted from the upper surface of the light adjustment member 40.

[0080] Light such as the light L21 extracted from the upper surface of the light adjustment member 40 corresponds to light traveling toward a region on the side (e.g., the -X side) with respect to the light-emitting layer 212. Since there is no light-emitting layer below the light adjustment member 40 (i.e., in the region that overlaps with the second upper surface 11b of the wavelength conversion member 10 in a top view), the amount of light extracted from the upper surface of the light adjustment member 40 is less than the amount of light L1 extracted from the first upper surface 11a of the wavelength conversion member 10, which travels upward from the light-emitting layer 212. In other words, the luminance of the first upper surface 11a of the wavelength conversion member 10 is higher than the luminance of the upper surface of the light adjustment member 40. Thereby, the luminance at each of the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40, which are the light-emitting surfaces of the light-emitting device 1, can be made different. That is, a luminance distribution including a high-luminance region and a low-luminance region can be obtained on the light-emitting surface of the light-emitting device 1.

[0081] Next, a part of the other light L22 among the light L2 that reaches the lower surface of the light adjusting member 40 is reflected, for example, by the lower surface of the light adjusting member 40. Further, the light L22 reflected by the lower surface of the light adjusting member 40 reaches the lower surface 12 of the wavelength conversion member 10. Furthermore, a part of the light L23 among the light L22 that reaches the lower surface 12 of the wavelength conversion member 10 is reflected by the lower surface 12 of the wavelength conversion member 10 and heads again toward the lower surface of the light adjusting member 40. Further, the light L23 enters the light adjusting member 40 and is extracted from the upper surface of the light adjusting member 40.

[0082] In the region below the light adjusting member 40 in the wavelength conversion member 10, like the light L22 and the light L23, by reciprocating between the lower surface of the light adjusting member 40 and the lower surface 12 of the wavelength conversion member 10, the optical path length of the light traveling in the wavelength conversion member 10 becomes longer compared to the case where the light adjusting member 40 is not disposed. On the other hand, as shown in FIGS. 2 and 3, the thickness between the second upper surface 11b and the lower surface 12 of the wavelength conversion member 10 is smaller than the thickness between the first upper surface 11a and the lower surface 12. Thereby, in the region below the light adjusting member 40 in the wavelength conversion member 10, the frequency at which the light traveling through the wavelength conversion member 10 is excited within the wavelength conversion member 10 can be reduced. As a result, in the region below the light adjusting member 40 in the wavelength conversion member 10, by adjusting the thickness between the second upper surface 11b and the lower surface 12 of the wavelength conversion member 10, the chromaticity of the light taken out from the upper surface of the light adjusting member 40 can be adjusted. Therefore, the difference between the chromaticity of the light taken out from the upper surface of the light adjusting member 40 and the chromaticity of the light taken out from the first upper surface 11a of the wavelength conversion member 10 can be reduced.

[0083] Next, another part of the light L24 among the light L22 that reaches the lower surface 12 of the wavelength conversion member 10 enters the light transmissive member 30. Thereafter, the light L24 is reflected by the light reflecting film 50. Further, the light L24 reflected by the light reflecting film 50 passes through the light transmissive member 30 and the inside of the wavelength conversion member 10 and reaches the lower surface of the light adjusting member 40. Further, the light L24 enters the light adjusting member 40 and is extracted from the upper surface of the light adjusting member 40. Thereby, the light extraction efficiency of the light emitting device 1 can be further improved.

[0084] In FIGS. 3 and FIG. 14 described later, the arrows indicating the traveling direction of light may omit the change in the traveling direction of light due to the refractive index difference between the members.

[0085] <Manufacturing method> Next, with reference to FIGS. 4 to 10, an example of a manufacturing method of the light-emitting device 1 according to the first embodiment will be described. FIGS. 4 to 10 are cross-sectional views schematically showing the manufacturing method of the light-emitting device according to the first embodiment.

[0086] The manufacturing method of the light-emitting device 1 according to the first embodiment includes a step of preparing a first intermediate body 110M including a light-emitting portion 21, a light-transmissive member 30, and a light reflection film 50, a step of preparing a second intermediate body 120M including a wavelength conversion member 10 and a light adjustment member 40, a step of disposing the first intermediate body 110M on a wiring substrate 70, a step of disposing the second intermediate body 120M above the first intermediate body 110M, and a step of forming a covering member 60.

[0087] <Step of preparing the first intermediate body 110M> The step of preparing the first intermediate body 110M will be described. As shown in FIG. 4, a light-emitting portion 21 including a first semiconductor layer 211, a light-emitting layer 212, and a second semiconductor layer 213 is formed on the light-transmissive member 30. Subsequently, for example, a part of the region 21S of the light-emitting portion 21 is removed by a removal method such as etching. Further, a hole for disposing the second electrode 25 is formed in the light-emitting portion 21 by a removal method such as etching.

[0088] Subsequently, as shown in FIG. 5, a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26 are respectively formed on the light-emitting portion 21 by a film-forming method such as sputtering. Further, a light reflection film 50 is formed on the light-transmissive member 30 at a position separated from the light-emitting portion 21 by a film-forming method such as sputtering. Subsequently, an adhesive layer 85 is formed on the light reflection film 50. Thereby, the first intermediate body 110M is prepared.

[0089] <Step of preparing the second intermediate body 120M> Next, the process of preparing the second intermediate 120M will be described. The process of preparing the second intermediate 120M may be performed before or after the process of preparing the first intermediate 110M.

[0090] As shown in FIG. 6, in the central region of the wavelength conversion member 10, a groove 10T is formed by etching or a blade. Subsequently, the optical adjustment member 40 is disposed in the groove 10T. Thereby, a plate-like member in which the wavelength conversion member 10 and the optical adjustment member 40 are integrated is obtained. As a method of disposing the optical adjustment member 40, for example, known methods in the art such as printing, potting, compression molding using a mold, transfer molding, etc. can be used.

[0091] Subsequently, the plate-like member is cut by a cutting method such as dicing at a predetermined position (for example, the position indicated by the broken line in FIG. 6) and fragmented into the second intermediate 120M as shown in FIG. 7. Thereby, the second intermediate 120M is prepared.

[0092] <Step of disposing the first intermediate 110M on the wiring board 70> Next, the process of disposing the first intermediate 110M on the wiring board 70 will be described. As shown in FIG. 8, the joining members 81, 82 (82a, 82b) are disposed on the wiring board 70. At this time, the joining member 81 is joined to the first metal layer 72 of the wiring board 70. Also, the joining member 82a is joined to the second metal layer 73a of the wiring board 70. Further, the joining member 82b is joined to the second metal layer 73b of the wiring board 70.

[0093] Also, using any conveyance means, the first intermediate 110M is conveyed above the wiring board 70 and the joining members 81, 82. Thereafter, the joining member 81 is joined to the light reflection film 50 via the adhesive layer 85. The joining member 82 is joined to the light emitting portion 21. Thereby, the first intermediate 110M is disposed above the member including the wiring board 70.

[0094] <Step of disposing the second intermediate 120M above the first intermediate 110M> Next, a process of disposing the second intermediate body 120M above the first intermediate body 110M will be described. Using any conveying means, the second intermediate body 120M is conveyed above the light-transmissive member 30. Then, as shown in FIG. 9, the lower surface 12 of the wavelength conversion member 10 is joined to the upper surface of the light-transmissive member 30. Thereby, the second intermediate body 120M is disposed above the first intermediate body 110M. The wavelength conversion member 10 may be directly joined to the light-transmissive member 30 or may be joined via an adhesive member (e.g., a light-transmissive resin). When the wavelength conversion member 10 is directly joined to the light-transmissive member 30, for example, direct joining methods such as pressure bonding, sintering, surface activation bonding, atomic diffusion bonding, and hydroxyl group bonding can be used.

[0095] <Process of forming the covering member 60> Next, a process of forming the covering member 60 will be described. As shown in FIG. 10, the covering member 60 is applied so as to cover the first side surface 13a and the second side surface 13b of the wavelength conversion member 10, the region 30N of the light-transmissive member 30, and the outer surfaces of the light adjustment member 40, respectively. Subsequently, the covering member 60 is cured by heat treatment. Thereby, the covering member 60 is formed. When the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 are covered by the applied covering member 60, the upper end portion of the covering member 60 is polished or ground to expose the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40.

[0096] Through these processes, the light-emitting device 1 is manufactured. In the process of preparing the first intermediate body 110M described with reference to FIG. 5, the joining member 81 may be joined on the adhesive layer 85, and the joining member 82 may be joined on the first pad electrode 23 and the second pad electrode 24. Also, before the process of disposing the first intermediate body 110M on the wiring substrate 70, the second intermediate body 120M may be disposed on the first intermediate body 110M. Further, at least one of the first intermediate body 110M, the second intermediate body 120M, the covering member 60, and the wiring substrate 70 described above can be prepared by purchase.

[0097] [Modification of the First Embodiment] Next, with reference to FIGS. 11 and 12, a modified example of the light-emitting device according to the first embodiment will be described. FIG. 11 is a cross-sectional view schematically showing a light-emitting device 1A according to a modified example of the first embodiment. FIG. 12 is a cross-sectional view schematically showing a light-emitting device 1B according to another modified example of the first embodiment. In the modified examples of the first embodiment, the same reference numerals are given to the constituent members similar to those in the first embodiment, and the description thereof will be omitted as appropriate.

[0098] A configuration example of the light-emitting device 1A according to the modified example will be described. As shown in FIG. 11, the light-emitting device 1A further includes a translucent plate 18 disposed on the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40. The translucent plate 18 can protect the wavelength conversion member 10 and the light adjustment member 40.

[0099] The translucent plate 18 may be made of an insulating material such as sapphire, spinel, glass, or a semiconductor material such as aluminum nitride or silicon carbide. Among them, glass with a high light transmittance and capable of reducing costs is preferable. Further, by using glass as the substance constituting the translucent plate 18, light deterioration can be reduced and mechanical strength can be ensured. Examples of the glass include borosilicate glass and fused silica.

[0100] Next, a configuration example of the light-emitting device 1B according to another modified example will be described. As shown in FIG. 12, the light-emitting device 1B includes a plurality of light reflection films 50B each joined to a corresponding one of the plurality of joining members 81. The plurality of light reflection films 50B are arranged at intervals from each other. Thereby, a covering member 60 can be disposed between adjacent light reflection films 50B. If the covering member 60 is made of a substance with a higher reflectance than the light reflection film 50B, such as a white resin, the light reaching the light reflection film 50B and the covering member 60 can be more effectively reflected toward the light adjustment member 40. Thereby, the light extraction efficiency of the light-emitting device 1B can be further improved.

[0101] [Second Embodiment] <Overall Configuration Example of Light-Emitting Device 2> Next, with reference to FIG. 13, a configuration example of the light-emitting device 2 according to the second embodiment will be described. FIG. 13 is a cross-sectional view schematically showing an example of the overall configuration of the light-emitting device according to the second embodiment. In the example shown in FIG. 13, the light-emitting device 2 includes a wavelength conversion member 10, a light-emitting element 20C including a light-emitting portion 21C and a light-transmissive member 30, and a light adjustment member 40. However, the light-emitting element 20C may not include the light-transmissive member 30. When the light-emitting element 20C does not include the light-transmissive member 30, the light-emitting device 2 includes the wavelength conversion member 10, the light-emitting portion 21C, and the light adjustment member 40. The light-emitting device 2 can further include a light reflection film 50C, a covering member 60, a wiring substrate 70, and bonding members 83 and 84. In the second embodiment, with respect to the constituent members similar to those in the first embodiment and the modification of the first embodiment (the first embodiment and the modification of the first embodiment are collectively referred to as the "first embodiment etc." below), the same reference numerals are given, and the description will be omitted as appropriate.

[0102] The light-emitting portion 21C of the light-emitting device 2 includes a second semiconductor layer 213C disposed so as to extend to a region between the light-transmissive member 30 and the light reflection film 50C. That is, in a top view, the second semiconductor layer 213C overlaps each of the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10.

[0103] The light reflection film 50C is bonded to the second semiconductor layer 213C. The light reflection film 50C has conductivity. The light-emitting device 2 includes bonding members 83 and 84. The bonding member 83 electrically connects a first metal layer 72c disposed on the upper surface of the wiring substrate 70 and the light reflection film 50C. In the example shown in FIG. 13, a conductive adhesive layer 85 is disposed between the bonding member 83 and the light reflection film 50C. The bonding member 84 electrically connects a second metal layer 73c disposed on the upper surface of the wiring substrate 70 and the first semiconductor layer 211. A pad electrode 27 and a first electrode 22 are disposed between the bonding member 84 and the first semiconductor layer 211. Note that the bonding member 83 is an example of the "first bonding member". The bonding member 84 is an example of the "second bonding member".

[0104] The first metal layer 72c, the joining member 83, the light reflection film 50C, the second semiconductor layer 213C, the light emitting layer 212, the first semiconductor layer 211, and the second metal layer 73c are each electrically connected. For example, current from an external power source is supplied to the light emitting portion 21C via the second metal layer 73c. The current supplied to the light emitting portion 21C flows in the -X direction in the second semiconductor layer 213C of the light emitting portion 21C, and then flows in the order of the light reflection film 50C, the adhesive layer 85, the joining member 83, and the first metal layer 72c. With such a configuration, the current supplied from the second metal layer 73c to the light emitting layer 212 is likely to be supplied to the entire light emitting layer 212 in plan view, so that the light emission efficiency of the light emitting layer 212 can be improved.

[0105] <An example of the operation> Next, with reference to FIG. 14, an example of the operation of the light emitting device 2 according to the second embodiment will be described. FIG. 14 is a schematic cross-sectional view for explaining an example of the operation of the light emitting device 2 according to the second embodiment.

[0106] As shown in FIG. 14, light L31 traveling from the light emitting layer 212 to, for example, an obliquely upper region on the -X side with respect to the light emitting layer 212 reaches the lower surface of the light transmissive member 30. At this time, a part of the light L31, i.e., light L32, enters the light transmissive member 30. Then, the light L32 passes through the light transmissive member 30 and the light adjusting member 40 and is extracted from the upper surface of the light adjusting member 40.

[0107] On the other hand, another part of the light L31, i.e., light L33, is reflected by the lower surface of the light transmissive member 30 and travels toward the upper surface of the light reflection film 50C. Also, the light L33 is reflected by the lower surface of the light reflection film 50C and reaches the lower surface of the light transmissive member 30 again. At this time, a part of the light L33, i.e., light L34, enters the light transmissive member 30. Then, the light L34 passes through the light transmissive member 30 and the light adjusting member 40 and is extracted from the upper surface of the light adjusting member 40. On the other hand, another part of the light L33 that has reached the lower surface of the light transmissive member 30, i.e., light L35, is reflected by the lower surface of the light transmissive member 30 and travels toward the upper surface of the light reflection film 50C.

[0108] According to the second embodiment, light emitted from the light-emitting layer 212 toward a region laterally (e.g., the -X side) of the light-emitting layer 212 can be extracted from the upper surface of the light adjustment member 40 through the second semiconductor layer 213C arranged to extend to the region between the translucent member 30 and the light reflection film 50C. Thereby, the light extraction efficiency of the light-emitting device 2 can be improved.

[0109] [Third Embodiment] <Example of the overall configuration of the light-emitting device 3> Next, with reference to FIG. 15, a configuration example of the light-emitting device 3 according to the third embodiment will be described. FIG. 15 is a cross-sectional view schematically showing an example of the overall configuration of the light-emitting device 3 according to the third embodiment. In the example shown in FIG. 15, the light-emitting device 3 includes a wavelength conversion member 10, a light-emitting element 20D including a light-emitting portion 21 and a translucent member 30D, a light adjustment member 40, and a covering member 60D. In the third embodiment, the same reference numerals are given to the same constituent members as in the first embodiment and the second embodiment, and the description thereof will be omitted as appropriate.

[0110] The translucent member 30D is disposed between the wavelength conversion member 10 and the light-emitting portion 21, similar to the first embodiment and the second embodiment. Different from the first embodiment and the second embodiment, the translucent member 30D does not overlap with the light adjustment member 40 in a top view. That is, the translucent member 30D does not overlap with the low-luminance region of the light-emitting surface of the light-emitting device 3 in a top view.

[0111] The covering member 60D covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. Further, the covering member 60D has light reflectivity. The covering member 60D covers the lower surface 12 of the wavelength conversion member 10 in a region that does not overlap with the light-emitting portion 21 in a top view. That is, the covering member 60D covers the lower surface 12 of the wavelength conversion member 10 that overlaps with the light adjustment member 40 in a top view. As the covering member 60D, a resin containing particles of a light-reflective substance can be used. Examples of the light-reflective substance and the resin include the light-reflective substance and the resin listed in the covering member 60 provided in the first embodiment.

[0112] According to the third embodiment, the light emitted obliquely upward from the -X side from the light-emitting layer 212 of the light-emitting portion 21 located in the high-luminance region and reaching the side surface of the translucent member 30D is reflected by the covering member 60D. Therefore, it is possible to reduce the light extracted to the outside from the low-luminance region side and increase the light extracted to the outside from the high-luminance region side. It is possible to increase the difference in luminance between the light emitted from the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region of the light-emitting device 3 and the light emitted from the upper surface of the light adjustment member 40 corresponding to the low-luminance region of the light-emitting device 3. Further, in the vicinity of the boundary between the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 (that is, the inner wall surface 14), the luminance can be changed steeply.

[0113] [Modification Example of the Third Embodiment] Next, with reference to FIG. 16, a modification example of the light-emitting device 3 according to the third embodiment will be described. FIG. 16 is a cross-sectional view schematically showing a light-emitting device 3A according to a modification example of the third embodiment. In the modification example of the third embodiment, the same reference numerals are given to the constituent members similar to those in the first embodiment, the second embodiment, and the third embodiment, and the description will be omitted as appropriate.

[0114] In the light-emitting device 3A according to the modification example, the light-emitting element 20E includes a translucent member 30E. As shown in FIG. 16, it is mainly different from the third embodiment in that the translucent member 30E overlaps a part of the light adjustment member 40 in a top view. Specifically, the side surface on the -X side of the translucent member 30E is located on the -X side of the inner wall surface 14 of the wavelength conversion member 10 and on the +X side of the second side surface 13b of the wavelength conversion member 10.

[0115] Since the translucent member 30E overlaps a part of the light adjustment member 40 in a top view, it is possible to make the change in luminance in the vicinity of the boundary between the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 gentler than in the third embodiment.

[0116] [Fourth Embodiment] [Overall Configuration Example of the Light-Emitting Device 4] Next, with reference to FIG. 17, a configuration example of the light-emitting device 4 according to the fourth embodiment will be described. FIG. 17 is a cross-sectional view schematically showing an example of the overall configuration of the light-emitting device 4 according to the fourth embodiment. In the example shown in FIG. 17, the light-emitting device 4 includes a wavelength conversion member 10, a light-emitting element 20D including a light-emitting portion 21 and a translucent member 30D, a light adjustment member 40, a covering member 60F, a wiring substrate 70, and a support 90. In the fourth embodiment, with respect to the same constituent members as those in the first embodiment and the like, the second embodiment, the third embodiment, and the modified example of the third embodiment (collectively referred to as the "third embodiment and the like" hereinafter), the same reference numerals are given, and the description will be omitted as appropriate.

[0117] The wiring substrate 70 is electrically connected to the light-emitting portion 21 in the same manner as in the first embodiment and the like to the third embodiment and the like. The support 90 is disposed on the wiring substrate 70 and supports the wavelength conversion member 10. An adhesive member may or may not be disposed between the lower surface of the support 90 and the upper surface of the wiring substrate 70. Also, an adhesive member may or may not be disposed between the upper surface of the support 90 and the lower surface 12 of the wavelength conversion member 10. The covering member 60F covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10, and covers the region exposed from the support 90 and the light-emitting element 20D on the lower surface 12 of the wavelength conversion member 10.

[0118] Examples of the support 90 include a member made of a metal material listed in the joining member 81 of the first embodiment, a member made of a ceramic such as aluminum nitride and silicon carbide, a member made of a translucent material such as sapphire, spinel, and glass, and a member made of a white resin containing light-reflective particles and resin. When the support 90 is made of a white resin, the support 90 may be made of the same resin as the resin constituting the covering member 60D of the third embodiment, for example, or may be made of a different resin.

[0119] When the support 90 is composed of a light-reflective member such as a metal material or a white resin, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 can be reflected toward the wavelength conversion member 10. Thereby, the light extraction efficiency of the light-emitting device 4 can be improved. Further, when the support 90 is composed of a ceramic such as aluminum nitride and silicon carbide, the heat generated in the wavelength conversion member 10 can be efficiently released to the wiring board 70 side.

[0120] The covering member 60F covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. The covering member 60F has light reflectivity. The covering member 60F is the lower surface 12 of the wavelength conversion member 10 and covers a region that does not overlap with the light-emitting unit 21 in a top view. The covering member 60F covers the side surface of the support 90. As the covering member 60F, a resin containing light-reflective particles similar to the covering member 60D of the third embodiment can be used.

[0121] According to the fourth embodiment, by the support 90 supporting the wavelength conversion member 10, it is possible to reduce the possibility that the wavelength conversion member 10 is disposed in an inclined state with respect to the light-emitting unit 21 due to its own weight.

[0122] [Modification of the Fourth Embodiment] Next, with reference to FIG. 18, a modification of the light-emitting device 4 according to the fourth embodiment will be described. FIG. 18 is a cross-sectional view schematically showing a light-emitting device 4A according to a modification of the fourth embodiment. In the modification of the fourth embodiment, the same reference numerals are given to the same constituent members as in the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment, and the description will be omitted as appropriate.

[0123] In the light-emitting device 4A according to the modified example, the support 90G is mainly different from the fourth embodiment in that it is composed of a light-reflective member 91 and a protection element 92. The protection element 92 is an element for protecting the light-emitting element 20D from element breakdown and performance degradation due to excessive voltage application. The protection element is, for example, a Zener diode that becomes conductive when a voltage equal to or higher than a specified voltage is applied. The protection element 92 is disposed on the wiring substrate 70. Specifically, the protection element 92 is electrically connected to the third metal layers 74a and 74b of the wiring substrate 70 via the third bonding members 86a and 86b. The light-reflective member 91 is disposed on the protection element 92. Thereby, light absorption by the protection element 92 can be reduced. The light-reflective member 91 is composed of, for example, a white resin. The light-reflective member 91 may be disposed on the protection element 92 via an adhesive member or may be disposed without an adhesive member.

[0124] As shown in FIG. 18, the covering member 60G that covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10 covers the side surface of the light-reflective member 91 and the side surface of the protection element 92. By covering the side surface of the protection element 92 with the covering member 60G, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is reflected by the covering member 60G before reaching the protection element 92 and travels toward the wavelength conversion member 10 side. That is, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is not absorbed by the protection element 92. Thereby, the light extraction efficiency of the light-emitting device 4A can be improved.

[0125] [Fifth Embodiment] [Overall Configuration Example of Light-Emitting Device 5] Next, with reference to FIG. 19, a configuration example of the light-emitting device 5 according to the fifth embodiment will be described. FIG. 19 is a cross-sectional view schematically showing an example of the overall configuration of the light-emitting device 5 according to the fifth embodiment. In the example shown in FIG. 19, the light-emitting device 5 includes a wavelength conversion member 10, a light-emitting element 20D including a light-emitting unit 21 and a light-transmissive member 30D, a light adjustment member 40, a covering member 60H, a wiring substrate 70, and a protection element 92H.

[0126] As shown in FIG. 19, the protection element 92H is disposed on the wiring substrate 70. Specifically, the protection element 92H is electrically connected to the third metal layers 74c and 74d of the wiring substrate 70 via the third bonding members 86c and 86d. The protection element 92H is disposed in a region overlapping the light adjusting member 40 in a top view. Further, the upper surface, lower surface, and side surfaces of the protection element 92H are covered with the covering member 60H. Thereby, the light emitted laterally from the light emitting layer 212 of the light emitting unit 21 is reflected by the covering member 60H before reaching the protection element 92H and travels toward the wavelength conversion member 10 side. That is, the light emitted laterally from the light emitting layer 212 of the light emitting unit 21 is not absorbed by the protection element 92H. Thereby, the light extraction efficiency of the light emitting device 5 can be improved.

[0127] The lower surface 12 of the wavelength conversion member 10 is separated from the upper surface of the protection element 92H. A part of the covering member 60H is located between the lower surface 12 of the wavelength conversion member 10 and the upper surface of the protection element 92H. The thickness of the covering member 60H located between the lower surface 12 of the wavelength conversion member 10 and the upper surface of the protection element 92H is thinner than the thickness of the light transmissive member 30D. Thereby, the distance between the upper surface of the protection element 92H and the lower surface 12 of the wavelength conversion member 10 can be shortened. As a result, even if the wavelength conversion member 10 is inclined obliquely with respect to the light emitting unit 21, it is possible to reduce the wavelength conversion member 10 from tilting more than a predetermined inclination. Further, it is possible to reduce the possibility that the luminance distribution and chromaticity of the light emitted from the light emitting device 5 deviate from the desired luminance distribution and chromaticity. Note that, unlike the example shown in FIG. 19, the upper surface of the protection element 92H may be in contact with the lower surface 12 of the wavelength conversion member 10.

[0128] [Embodiment] The luminance and luminous flux of the light emitted from each of the light emitting surfaces of Example 1, Example 2, and Comparative Example 1 below were calculated using optical simulation software (Optical design software “LightTools” manufactured by Synopsys). With reference to FIGS. 20, 21, and Table 1, the results of the optical simulation regarding Example 1, Example 2, and Comparative Example 1 will be described. In the optical simulation, the supply power when each of Example 1, Example 2, and Comparative Example 1 emits light was made the same.

[0129] Example 1 has the same configuration as the light-emitting device 3 according to the third embodiment. The light-transmitting member 30D of Example 1 overlaps the first upper surface 11a of the wavelength conversion member 10 and does not overlap the light adjustment member 40 in a top view. Example 2 has a configuration obtained by removing the light reflection film 50, the joining member 81, and the adhesive layer 85 from the light-emitting device 1 according to the first embodiment. The light-transmitting member 30 of Example 2 overlaps the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 respectively in a top view.

[0130] With reference to FIG. 20, the configuration of Reference Example 1 will be described. FIG. 20 is a cross-sectional view schematically showing the light-emitting device 1R according to Reference Example 1. As shown in FIG. 20, Reference Example 1 includes a light-transmitting member 30R having the same configuration as that of Example 2. That is, the light-transmitting member 30R of Reference Example 1 overlaps the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 respectively in a top view.

[0131] Reference Example 1 includes a light-emitting portion 21R disposed below the light-transmitting member 30R. The light-emitting portion 21R overlaps the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 in a top view. That is, the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 included in the light-emitting portion 21R overlap the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 in a top view. Further, Reference Example 1 further includes a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26. The first electrode 22 is electrically connected to the first semiconductor layer 211. Also, the first electrode 22 is electrically connected to the second metal layer 73a of the wiring substrate 70 through the first pad electrode 23 and the joining member 82a. The second electrode 25 is electrically connected to the second semiconductor layer 213 through the second pad electrode 24. Also, the second electrode 25 is electrically connected to the second metal layer 73b through the joining member 82b.

[0132] With reference to FIG. 21 and Table 1, the results of optical simulations regarding Example 1, Example 2, and Comparative Example 1 will be described. FIG. 21 is a graph showing the relative luminance, which is the result of the optical simulation of Example 1, Example 2, and Comparative Example 1. Table 1 is a table showing the values of the relative luminance and relative luminous flux in the high-luminance region in each of Example 1, Example 2, and Comparative Example 1.

[0133] The horizontal axis of FIG. 21 indicates the distance in the X-axis direction from the boundary between the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region and the upper surface of the light adjustment member 40 corresponding to the low-luminance region (that is, the inner wall surface 14 of the wavelength conversion member 10) on the light-emitting surface of each light-emitting device. The vertical axis of FIG. 21 indicates the relative luminance of Example 1, Example 2, and Comparative Example 1.

[0134] As shown in FIG. 21, the luminance in the high-luminance region was the highest in Example 1, and decreased in the order of Example 2 and Comparative Example 1. Also, as shown in Table 1, the luminous flux was also the highest in Example 1, and decreased in the order of Example 2 and Comparative Example 1.

[0135]

Table 1

[0136] From the results of the optical simulation shown in FIG. 21 and Table 1, it was confirmed that by arranging the translucent member 30D so as not to overlap with the light adjustment member 40 in a top view, light with high luminance can be emitted from the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region, and the luminance difference between the high-luminance region and the low-luminance region can be increased.

[0137] Although the preferred embodiments etc. have been described in detail above, the present invention is not limited to the above-described embodiments etc., and various modifications and substitutions can be made to the above-described embodiments etc. without departing from the scope described in the claims.

[0138] Aspects of the present disclosure are, for example, as follows. <Item 1> A wavelength conversion member having an upper surface, a lower surface located on the opposite side of the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and located on the opposite side of the first side surface; A light emitting part disposed on the side of the first side surface on the lower surface of the wavelength conversion member and having a light emitting layer; A light adjustment member disposed on the side of the second side surface on the upper surface of the wavelength conversion member and not overlapping with the light emitting layer in a top view; A light emitting device comprising the above. <Item 2> Further comprising a light transmissive member disposed between the wavelength conversion member and the light emitting part and extending to a position overlapping with the light adjustment member in a top view; The light emitting device according to the above <Item 1>. <Item 3> The upper surface of the wavelength conversion member has a first upper surface and a second upper surface located below the first upper surface, The light adjustment member is disposed on the second upper surface, The thickness between the second upper surface and the lower surface of the wavelength conversion member is smaller than the thickness between the first upper surface and the lower surface of the wavelength conversion member, The light emitting device according to the above <Item 2>. <Item 4> Further comprising a light reflection film disposed on the lower surface of the light transmissive member in a region where the light transmissive member overlaps with the light adjustment member in a top view; The light emitting device according to the above <Item 2> or <Item 3>. <Item 5> Further comprising a covering member covering the first side surface and the second side surface of the wavelength conversion member and having light reflectivity, The covering member is the lower surface of the light transmissive member and covers a region that does not overlap with the light reflection film in a top view. The light emitting device according to the above <Item 4>. <Item 6> A wiring board disposed below the light emitting part and the light reflection film and having a first metal layer on the upper surface; A first joining member connecting the first metal layer and the light reflection film; Further comprising the above, the light emitting device according to the above <Item 4> or <Item 5>. <Item 7> The first joining member includes at least one of a metal material and an alloy material. The light-emitting device according to <Item 6> above. <Item 8> The light-emitting portion further includes a first semiconductor layer disposed on the lower surface side of the light-emitting layer and a second semiconductor layer disposed on the upper surface side of the light-emitting layer. The second semiconductor layer extends to a region between the light-transmissive member and the light-reflecting film. The light-emitting device according to any one of <Items 4> to <Item 7> above. <Item 9> The light-reflecting film has conductivity. A wiring board disposed below the light-emitting portion and the light-reflecting film and having a first metal layer and a second metal layer on the upper surface; A first joining member that electrically connects the first metal layer and the light-reflecting film; A second joining member that electrically connects the second metal layer and the lower surface of the first semiconductor layer; further comprising: The light-emitting device according to <Item 8> above. <Item 10> The light-emitting portion includes a plurality of light-emitting layers. The light-emitting device according to any one of <Items 1> to <Item 9> above. <Item 11> Further comprising a light-transmissive member disposed between the wavelength conversion member and the light-emitting portion and not overlapping the light adjustment member in a top view. The light-emitting device according to <Item 1> above. <Item 12> Further comprising a covering member that covers the first side surface and the second side surface of the wavelength conversion member and has light reflectivity. The covering member is the lower surface of the wavelength conversion member and covers a region that does not overlap the light-emitting portion in a top view. The light-emitting device according to <Item 11> above. <Item 13> A wiring board electrically connected to the light-emitting portion; A support disposed on the wiring board and supporting the wavelength conversion member; further comprising: The light-emitting device according to <Item 12> above. <Item 14> The support is made of a light-reflective member. The light-emitting device according to item 13 above. <Item 15> The support is composed of a light-reflective member and a protective element. The protective element is disposed on the wiring board. The light-reflective member is disposed on the protective element. The light-emitting device according to item 13 above. <Item 16> A wiring board electrically connected to the light-emitting portion. A protective element disposed on the wiring board, disposed in a region overlapping with the light-adjusting member in a top view, and covered with the covering member. Further comprising: The lower surface of the wavelength conversion member and the upper surface of the protective element are separated. The thickness of the covering member located between the lower surface of the wavelength conversion member and the upper surface of the protective element is thinner than the thickness of the light-transmissive member. The light-emitting device according to item 12 above.

Explanation of symbols

[0139] 1, 1A, 1B, 2, 3, 3A, 4, 4A, 5 Light-emitting device 10 Wavelength conversion member 11 Upper surface 11a First upper surface 11b Second upper surface 12 Lower surface 13a First side surface 13b Second side surface 20, 20C, 20D, 20E Light-emitting element 21, 21C Light-emitting portion 211 First semiconductor layer 212 Light-emitting layer 213, 213C Second semiconductor layer 30, 30D, 30E Light-transmissive member 40 Light-adjusting member 50, 50B, 50C Light-reflective film 60, 60D, 60F, 60G, 60H Covering member 70 Wiring board 71 Substrate 72, 72c First metal layer 73, 73a, 73b, 73c Second metal layer 74a, 74b, 74c, 74d Third metal layer 81, 82, 83, 84 Joining member 86a, 86b, 86c, 86d Third joining member 90, 90G Support 91 Light-reflective member 92, 92H Protection element

Claims

1. A wavelength conversion member having an upper surface, a lower surface located on the opposite side of the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and located on the opposite side of the first side surface; A light emitting portion having a light emitting layer, disposed on the side of the first side surface on the lower surface of the wavelength conversion member; A light adjusting member disposed on the side of the second side surface on the upper surface of the wavelength conversion member and not overlapping the light emitting layer in a top view; A light emitting device comprising the above.

2. The light emitting device according to claim 1, further comprising a light transmissive member disposed between the wavelength conversion member and the light emitting portion and extending to a position overlapping the light adjusting member in a top view. The light emitting device according to claim 1.

3. The upper surface of the wavelength conversion member has a first upper surface and a second upper surface located below the first upper surface; The light adjusting member is disposed on the second upper surface; The thickness between the second upper surface and the lower surface of the wavelength conversion member is smaller than the thickness between the first upper surface and the lower surface of the wavelength conversion member. The light emitting device according to claim 2.

4. The light emitting device according to claim 2, further comprising a light reflecting film disposed on the lower surface of the light transmissive member in a region where the light transmissive member overlaps the light adjusting member in a top view. The light emitting device according to claim 2.

5. The light emitting device further comprises a covering member that covers the first side surface and the second side surface of the wavelength conversion member and has light reflectivity; The covering member is the lower surface of the light transmissive member and covers a region that does not overlap the light reflecting film in a top view. The light emitting device according to claim 4.

6. A wiring board disposed below the light emitting portion and the light reflecting film and having a first metal layer on the upper surface; A first joining member that connects the first metal layer and the light reflecting film; The light emitting device according to claim 4, further comprising the above.

7. The first joining member includes at least one of a metal material and an alloy material. The light emitting device according to claim 6.

8. The light emitting portion further comprises a first semiconductor layer disposed on the lower surface side of the light emitting layer and a second semiconductor layer disposed on the upper surface side of the light emitting layer; The second semiconductor layer extends to a region between the light transmissive member and the light reflecting film. The light emitting device according to claim 4.

9. The light reflecting film has conductivity; A wiring board disposed below the light emitting portion and the light reflecting film and having a first metal layer and a second metal layer on the upper surface; a first joining member that electrically connects the first metal layer and the light reflection film; a second joining member that electrically connects the second metal layer and the lower surface of the first semiconductor layer; further comprising; The light-emitting device according to claim 8.

10. The light-emitting unit includes a plurality of light-emitting layers. The light-emitting device according to claim 1 or claim 2.

11. further comprising a light-transmissive member disposed between the wavelength conversion member and the light-emitting unit and not overlapping the light adjustment member in a top view; The light-emitting device according to claim 1.

12. further comprising a covering member that covers the first side surface and the second side surface of the wavelength conversion member and has light reflectivity, The covering member is a lower surface of the wavelength conversion member and covers a region that does not overlap the light-emitting unit in a top view. The light-emitting device according to claim 11.

13. a wiring board electrically connected to the light-emitting unit; a support disposed on the wiring board and supporting the wavelength conversion member; further comprising; The light-emitting device according to claim 12.

14. The support is made of a light-reflective member. The light-emitting device according to claim 13.

15. The support is composed of a light-reflective member and a protection element, The protection element is disposed on the wiring board, The light-reflective member is disposed on the protection element. The light-emitting device according to claim 13.

16. a wiring board electrically connected to the light-emitting unit; a protection element disposed on the wiring board and disposed in a region that overlaps the light adjustment member in a top view and is covered by the covering member; further comprising, The lower surface of the wavelength conversion member and the upper surface of the protection element are spaced apart, The thickness of the covering member located between the lower surface of the wavelength conversion member and the upper surface of the protection element is thinner than the thickness of the light-transmissive member. The light-emitting device according to claim 12.

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