Photoelectric conversion device, photoelectric conversion system, movable body, and semiconductor substrate

Abstract

To propose the arrangement of column circuits for preventing a deterioration in image quality caused by the characteristic difference between pixel columns, the characteristic difference between pixel rows, color mixture, and a power supply variation.SOLUTION: A photoelectric conversion device has a pixel array including a plurality of pixels. A first pixel and a second pixel of the plurality of pixels correspond to different colors. The first pixel and a third pixel of the plurality of pixels correspond to the same color. The photoelectric conversion device has a first circuit group connected with the first pixel, and a third circuit group connected with the third pixel. The photoelectric conversion device has a first circuit included in the first circuit group, a second circuit, and a third circuit included in the third circuit group and having the same function as that of the first circuit. In a top view, the third circuit is arranged between the first circuit and the second circuit.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device, a photoelectric conversion system including the photoelectric conversion device, a moving body, and a semiconductor substrate.

Background Art

[0002] Patent Document 1 discloses a solid-state imaging device in which one signal line is provided for each pixel column, and the signal lines of odd-numbered columns are read by a column circuit arranged below the pixel array, and the signal lines of even-numbered columns are read by a column circuit arranged above the pixel array.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the solid-state imaging device described in Patent Document 1, characteristic differences between pixel columns and characteristic differences between pixel rows due to process variations between elements, temperature distribution within the chip, power supply resistance, etc., or image quality deterioration due to color mixing, power supply fluctuations, and digital signal transmission interfering with the analog circuit occur.

Means for Solving the Problems

[0005] One aspect of the present invention is a photoelectric conversion device, which has a pixel array including a plurality of pixels corresponding to the same color. The plurality of pixels have a first signal line, a second signal line, a third signal line, and a fourth signal line. The first signal line is connected to a first circuit group, the second signal line is connected to a second circuit group, the third signal line is connected to a third circuit group, and the fourth signal line is connected to a fourth circuit group. The first circuit included in the first circuit group, the second circuit included in the second circuit group and having the same function as the first circuit, the third circuit included in the third circuit group and having the same function as the first circuit, and the fourth circuit included in the fourth circuit group and having the same function as the first circuit. The first circuit, the second circuit, the third circuit, and the fourth circuit are arranged over a plurality of rows and a plurality of columns.

[0006] Another aspect of the present invention is a photoelectric conversion device, which has a pixel array including a plurality of pixels. Among the plurality of pixels, a first pixel and a second pixel are arranged side by side in a first direction, corresponding to different colors. The first pixel and the second pixel are connected to different signal lines. The first circuit group connected to the first pixel and the second circuit group connected to the second pixel are provided. The first circuit included in the first circuit group, the second circuit, and the third circuit included in the second circuit group and having the same function as the first circuit. In a top view, the second circuit is arranged between the first circuit and the third circuit.

[0007] Still another aspect of the present invention is a photoelectric conversion device, which has a pixel array including a plurality of pixels. The first circuit group connected to a first pixel and the second circuit group connected to a second pixel are provided. The first and second circuit groups include a comparator, a first memory for holding a signal according to the output of the comparator, and a second memory for taking in the output of the first memory. At least a part of the second circuit group is arranged between the first memory and the second memory of the first circuit group.

Advantages of the Invention

[0008] The present invention has been made in view of the above problems and can suppress image quality degradation.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Modes for Carrying Out the Invention

[0010] Hereinafter, each embodiment will be described with reference to the drawings.

[0011] In each of the embodiments described below, as an example of a photoelectric conversion device, an imaging device will be mainly described. However, each embodiment is not limited to an imaging device and can also be applied to other examples of photoelectric conversion devices. For example, there are ranging devices (devices for distance measurement using focus detection or TOF (Time Of Flight)), photometric devices (devices for measuring the amount of incident light), and the like.

[0012] (First Embodiment) FIGS. 1 to 4 are schematic diagrams of a photoelectric conversion device according to the first embodiment.

[0013] The photoelectric conversion device shown in FIG. 1 includes pixels 10, a pixel array 20, signal lines 30, signal line 31, current sources 40, 41, lamp signal generation circuits 50, 51, comparators 60, 61. Further, it has a first memory 70, 71, a second memory 80, 81, counters 90, 91, output circuits 100, 101.

[0014] A plurality of pixels 10 are arranged in an array over a plurality of rows and columns in the pixel array 20. R of the pixel 10 is a red pixel, G is a green pixel, and B is a blue pixel. Each pixel is associated with a color, for example, by arranging a color filter corresponding to a specific visible light wavelength range of one color of red, green, or blue for each pixel on its light incident side. In other words, the peak wavelengths of the color filters of pixels corresponding to the same color overlap. Here, color separation by a color filter is taken as an example, but the method of color separation is not limited to a color filter.

[0015] In each column of the pixel array 20, signal lines are arranged extending in the column direction (vertical direction in FIG. 1). The signal lines are respectively connected to the pixels 10 arranged in the column direction and form a common signal line for these pixels 10.

[0016] The number of pixels 10 constituting the pixel array 20 is not particularly limited. For example, the pixel array 20 may be constituted by thousands of rows × thousands of columns of pixels 10 like a general digital camera, or may be constituted by a plurality of pixels 10 arranged in one row.

[0017] The pixel signal read from the pixel 10 is input to the signal processing circuit via the signal line 30 or the signal line 31. The signal processing circuit is a circuit group including comparators (60, 61) that compare the pixel signal read from the pixel 10 with the reference signal output from the lamp signal generation circuit, memories (70, 71, 80, 81) that hold signals, and the like. The pixel signals are sequentially output column by column via the signal processing circuit.

[0018] (Configuration of Pixel) The configuration of the pixel 10 according to this embodiment will be described.

[0019] FIG. 2 shows an example of the equivalent circuit of the pixel 10.

[0020] Each of the pixels 10 has a photodiode 400, a transfer transistor 410, a floating diffusion 420, and a source follower transistor 430. Further, it has a selection transistor 440, a GND node 450, a reset transistor 455, and a power supply node 460.

[0021] The GND node is connected to the ground having a ground potential. Hereinafter, the ground is also referred to as GND.

[0022] The photodiode 400 is grounded at the GND node 450. The photodiode 400 is connected to the transfer transistor 410. A control signal is input from the control signal line TX to the gate of the transfer transistor 410. The transfer transistor 410 has a common node with the gates of the reset transistor 455 and the source follower transistor 430, and this common node becomes the floating diffusion 420. Both the reset transistor 455 and the source follower transistor 430 are connected to the power supply node 460. A reset signal is input from the reset signal line RES to the gate of the reset transistor 455. The source follower transistor 430 is connected to the selection transistor 440, and a selection signal is input from the selection signal line SEL to the gate of the selection transistor 440. The selection transistor 440 is connected to the signal line 30.

[0023] (Function of each element) The functions of the elements of the photoelectric conversion device according to the present embodiment will be described.

[0024] The photodiode 400 photoelectrically converts the incident light and generates charges.

[0025] The charges photoelectrically converted by the photodiode 400 are transferred to the floating diffusion 420 via the transfer transistor 410 and converted into a signal voltage by the capacitance associated with the floating diffusion 420. The signal voltage is input to the gate of the source follower transistor 430 and output to the signal line 30 via the selection transistor 440. The source follower transistor 430 forms a source follower together with the current source 40 in FIG. 1, and the signal voltage on the floating diffusion 420 is buffered by the source follower and output to the signal line 30.

[0026] Comparator 60 compares the signal on signal line 30 with the ramp signal output from ramp generation circuit 50. At the timing when comparator 60 flips, first memory 70 captures the count signal from counter 90. Thereby, the signal based on the charge generated in pixel 10 is AD-converted. The digital signal held in first memory 70 is transferred to second memory 80 and then output outside the chip.

[0027] In this embodiment, an example using common counters 90 and 91 in a plurality of circuits is shown. However, a configuration in which a common count clock is supplied to each signal processing circuit and a counter is arranged for each circuit corresponding to each signal line is also common. The present invention can also be applied to such a configuration.

[0028] FIG. 3 shows an example of a specific circuit configuration of current source 40.

[0029] The current source shown in FIG. 3 includes current source transistor 140, cascode transistor 150, and switch transistor 160. Current source transistor 140 is grounded and connected to cascode transistor 150. Cascode transistor 150 is connected to switch transistor 160, and the switch transistor is connected to signal line 30.

[0030] Current source transistor 140 supplies a current corresponding to the gate voltage to signal line 30 via the cascode transistor and the switch transistor.

[0031] Cascode transistor 150 determines the drain-source voltage of current source transistor 140 according to the gate voltage. Thereby, even if the potential of signal line 30 fluctuates, it is possible to suppress the drain-source voltage of current source transistor 140 from fluctuating, and current fluctuations can be reduced.

[0032] Switch transistor 160 turns off when performing power saving to reduce power.

[0033] For the current source 41 that supplies current to the signal line 31, a circuit similar to the current source 40 can be used.

[0034] FIG. 4 shows an example of the layout arrangement of the current source 40 and the current source 41.

[0035] In the following description, the first row from the bottom of the figure and the first column from the left side of the figure will be described. The same applies to the subsequent embodiments. FIG. 5 also shows a comparative example of the layout arrangement.

[0036] In FIG. 5, similar to Patent Document 1, the signals of the signal lines 30 corresponding to the even columns are read out downward of the pixel array 20, and the signals of the signal lines 31 corresponding to the odd columns are read out upward of the pixel array 20. In the case of the Bayer - shaped color filter arrangement as shown in FIG. 5, when reading the signals of the red pixels from the signal line 30, the signals of the green pixels are read out from the signal line 31.

[0037] Also, in each output line, the switch transistor 160, which is a current source, the cascode transistor 150, and the current - source transistor 140 are arranged in the column direction. In this case, the current - source transistors 140 in each current source are arranged in a one - dimensional manner in the row direction.

[0038] On the other hand, in the photoelectric conversion device according to the present embodiment shown in FIG. 4, three types of transistors connected to the signal line 30 and three types of transistors connected to another signal line 30 are arranged such that transistors having the same function are adjacent to each other in the column direction. At this time, the transistors remain arranged in a one - dimensional manner in the row direction. In such an arrangement, it is possible to bring the center - of - gravity positions of the elements closer to each other and arrange them closely. By reducing the process variation, temperature difference, power - supply resistance difference, etc. between the elements, the characteristics of the elements can be made uniform, and the difference between columns within the same color can be suppressed.

[0039] Note that when the functions of the transistors are the same here, it means that the connection relationships of the respective transistors are the same. For example, when the gates of two certain transistors are connected to a common control line, one of the source and drain is connected to a corresponding signal line, and the other is supplied with a common bias, the functions of these two transistors are the same. Transistors with the same function also have the same size.

[0040] In this way, in this embodiment, it is possible to suppress image quality degradation due to characteristic differences for each pixel column.

[0041] In this embodiment, an example in which the switch transistor 160, the cascode transistor 150, and the current source transistor 140 are adjacent to each other in the column direction has been described. However, the present invention is not limited to this, and only some of the three transistors included in the current source may be adjacent to each other in the column direction.

[0042] In FIG. 4, three types of transistors connected to the signal line 30 and three types of transistors connected to another signal line 30 are alternately arranged, respectively. However, the arrangement is not limited to this as long as transistors having the same function are adjacent to each other. For example, an itch transistor 160 and a cascode transistor 150 connected to another signal line 30 may be arranged between the switch transistor 160 and the cascode transistor 150 connected to the signal line 30.

[0043] Also, elements that can contribute to characteristic differences may be preferentially adjacent to each other in the column direction at that time. For example, the switch transistor 160 may be arranged in the same manner as in FIG. 5, while the cascode transistor 150 and the current source transistor 140 may be adjacent to each other in the column direction.

[0044] Also, the current sources 40 and 41 are not limited to the example shown in FIG. 3. For example, a sample hold circuit that holds a voltage at the gate of the current source transistor 140 may be provided.

[0045] Furthermore, in this embodiment, an example in which the transistors included in the current sources 40 and 41 are arranged adjacent to each other in the column direction has been shown. However, the circuit arranged in this way is not limited to the current source. For example, it may be implemented in the arrangement of elements included in the comparators 60 and 61. Here, the element is, for example, a transistor. Also, while the first memories 70 and 71 and the second memories 80 and 81 are arranged in a one-dimensional manner, the current sources 40 and 41 and the comparators 60 and 61 may be in a two-dimensional array spanning multiple rows and columns.

[0046] (Second Embodiment) FIG. 6 shows a schematic diagram of a photoelectric conversion device according to the second embodiment. Hereinafter, the description common to the first embodiment will be omitted, and mainly the differences from FIG. 4 will be described.

[0047] In the photoelectric conversion device shown in FIG. 6, in the pixel array 20, one pixel column has two signal lines. The signal lines 30 and 32 correspond to even-numbered columns, and the signal lines 31 and 33 correspond to odd-numbered columns.

[0048] The signal line 30 reads out the pixels in the even-numbered columns and odd-numbered rows of the pixel array 20 downward, and the signal line 31 reads out the pixels in the odd-numbered columns and even-numbered rows of the pixel array 20 downward. The signal line 32 reads out the pixels in the even-numbered columns and even-numbered rows of the pixel array 20 upward, and the signal line 33 reads out the pixels in the odd-numbered columns and odd-numbered rows of the pixel array 20 to the circuit above.

[0049] In the case of a Bayer-shaped color filter arrangement, when reading the signal of the red pixel from the signal line 30, the signal of the blue pixel is read from the signal line 31. Thus, in this embodiment, unlike the first embodiment, the signals of the pixels read out simultaneously downward from the pixel array 20 correspond to two different colors. The signal read out from the signal line 30 is input to the comparator 60, and the signal read out from the signal line 31 is input to the comparator 61.

[0050] At this time, if the comparators for AD-converting the read signals are arranged adjacent to each other, when the outputs of the comparators change, they may interfere with each other and color mixing may occur.

[0051] Therefore, in the photoelectric conversion device shown in FIG. 6, the comparators 60 and 61 are separated by arranging the comparators and the current sources alternately in each column in a top view so that the comparators 60 and 61 do not adjacent to each other. That is, in a top view, the comparator 60 is arranged between the current sources 40 and 41, and the comparator 61 is arranged after the current source 41. With such an arrangement, it is possible to suppress the occurrence of color mixing due to mutual interference when the outputs of the comparator 60 and the comparator 61 change. Here, the top view means looking down on the light incident surface of the semiconductor substrate.

[0052] Further, compared with the case where the current sources 40 and 41 are arranged close to each other without shifting their positions in the column direction, the current sources 40 corresponding to the same color for reading signals, or the current sources 41 corresponding to the same color can be arranged closer to each other. In other words, it is possible to separate and arrange the region of the current sources corresponding to the odd-numbered columns and the region of the current sources corresponding to the even-numbered columns. The same applies to the arrangement of the comparators 60 and 61. With such an arrangement, it is possible to suppress image quality degradation due to characteristic differences between columns in pixels of the same color.

[0053] In this way, in the present embodiment, it is possible to suppress the occurrence of color mixing and image quality degradation due to characteristic differences between pixel columns within the same color.

[0054] (Third Embodiment) FIG. 7 shows a schematic diagram of a photoelectric conversion device according to the third embodiment. Hereinafter, descriptions common to those up to the second embodiment will be omitted, and mainly differences from FIG. 6 will be described.

[0055] The photoelectric conversion device shown in FIG. 7 has a stacked structure and includes a pixel substrate 200 and a circuit substrate 210. The pixel substrate 200 has a pixel array 20, and the current sources 40, 41, 42, 43 and the comparators 60, 61, 62, 63 are provided on the circuit substrate 210. Further, the signal lines 30, 31, 32, 33 of the pixel substrate 200 and the current sources 40, 41, 42, 43 of the circuit substrate 210 are connected using inter-substrate bonds 220, 230, 240, 250.

[0056] In the element arrangement of FIG. 6 showing the second embodiment, since the distance from the pixel array 20 to the current source 40 and the distance from the pixel array 20 to the current source 41 are different, the length of the signal line 31 is longer than the length of the signal line 30. Therefore, the parasitic capacitance associated with the signal line 31 becomes larger than the parasitic capacitance associated with the signal line 30, which may cause image quality degradation and operation speed degradation.

[0057] Therefore, in this embodiment, by adopting a stacked configuration for the photoelectric conversion device, the lengths and parasitic capacitances of the signal lines in each column are made uniform when the current sources 40 and 41 are separately arranged.

[0058] In this way, in this embodiment, it is possible to suppress image quality degradation and operation speed degradation caused by the difference in parasitic capacitance of the signal lines.

[0059] (Fourth Embodiment) FIG. 8 shows a schematic diagram of a photoelectric conversion device according to the fourth embodiment. Hereinafter, descriptions common to the first to third embodiments will be omitted, and mainly differences from FIG. 4 will be described.

[0060] The photoelectric conversion device shown in FIG. 8 has a pixel group arranged in one column of the pixel array 20 having eight signal lines. Compared with the first embodiment, the number of signal lines 30 for reading red pixels in even columns and odd rows has increased by four. Also, the number of signal lines 31 for reading blue pixels in odd columns and even rows has increased by four. Therefore, four current sources are arranged for one column of pixels.

[0061] In this embodiment, each of the four switch transistors 160, four cascode transistors 150, and four current source transistors 140 constituting the four current sources 40 is arranged in a two-dimensional array over a plurality of rows and columns. Similarly, each of the switch transistors 161, four cascode transistors 151, and four current source transistors 141 constituting the four current sources 41 is arranged in a two-dimensional array over a plurality of rows and columns.

[0062] For example, each of the four signal lines 30 is designated as signal line 30(a), signal line 30(b), signal line 30(c), and signal line 30(d), and the current sources and their elements arranged on each line are similarly distinguished by attaching the corresponding (a) - (d). A switch transistor 160(a), a cascode transistor 150(a), and a current source transistor 140(a) are arranged on signal line 30(a). The same applies to signal lines 30(a) - 30(c).

[0063] These transistors are arranged in a two - dimensional array so that elements having the same function in each column are aggregated.

[0064] The specific arrangement is as follows. First, in a top view, in the column direction, the switch transistors 160(a), 160(c), cascode transistors 150(a), 150(c), current source transistors 140(a), 140(c) are arranged in this order. The same applies to signal lines 30(b) and 30(d). That is, in a top view, in the column direction, the switch transistors 160(b), 160(d), cascode transistors 150(b), 150(d), current source transistors 140(b), 140(d) are arranged in this order.

[0065] At this time, the switch transistors 160(a) and 160(c), and the switch transistors 160(b) and 160(d) are adjacent in the row direction. The same applies to the cascode transistors 150 and the current source transistors 140.

[0066] That is, when focusing on the four switch transistors 160, the switch transistor 160(a) and the switch transistor 160(c) are adjacent to each other in the column direction, and the switch transistor 160(a) and the switch transistor 160(d) are adjacent to each other in the row direction. The four switch transistors are arranged in a two-dimensional array over a plurality of rows and a plurality of columns. The four cascode transistors 150 and the four current source transistors 140 are also arranged in a two-dimensional array over a plurality of rows and a plurality of columns in the same manner.

[0067] As a result, it becomes possible to arrange elements for reading different rows of the same color in close proximity to each other, and by reducing process variations, temperature differences, power supply resistance differences, etc. between the elements, the characteristics of the elements are made uniform, and it becomes possible to suppress the difference between pixel rows within the same color.

[0068] In this way, in the present embodiment, it becomes possible to suppress image quality degradation due to characteristic differences for each row of pixels.

[0069] In the present embodiment, the switch transistors 160 and 161, the cascode transistors 150 and 151, and the current source transistors 140 and 141 are arranged in close proximity. However, as shown in the second and third embodiments, the circuits for processing signals of different colors may be arranged separately. As a result, it becomes possible to further reduce the occurrence of color mixing and improve the difference between columns within the same color.

[0070] Also, as shown in the third embodiment, a stacked configuration may be adopted. As a result, it becomes possible to further suppress image quality degradation and a decrease in operating speed due to differences in parasitic capacitance of signal lines.

[0071] Furthermore, in the present embodiment, the case where there are eight signal lines per pixel column has been described as an example, but the present invention is not limited to this. For example, the number of signal lines per pixel column may be any number of four or more, such as 12, 16, 20, 24, etc.

[0072] (Fifth Embodiment) FIG. 9 shows a schematic diagram of a photoelectric conversion device according to a fifth embodiment. Hereinafter, descriptions common to those up to the fourth embodiment are omitted, and differences mainly from FIG. 7 will be described.

[0073] The photoelectric conversion device shown in FIG. 9 has a stacked structure as in FIG. 7. In addition to the elements shown in FIG. 7, first memories 70, 71, 72, 73, second memories 80, 81, 82, 83, output circuits 100 and 101 are shown. Each of the first memory and the second memory is a latch circuit.

[0074] The lower half of the circuit board 210 will be described. The elements in the latter stage of the signal line are arranged in the order of current source 40, comparator 60, first memory 70, current source 41, comparator 61, first memory 70, second memory 80, and second memory 81.

[0075] That is, a part of the second column circuit group (current source 41, comparator 61, first memory 71, second memory 81) is arranged between the first memory 70 and the second memory 80 of the first column circuit group (current source 40, comparator 60, first memory 70, second memory 80).

[0076] By arranging the comparator 60 and the first memory 70 in proximity, the wiring length and parasitic capacitance of the output of the comparator 60 can be reduced. Thereby, by suppressing the power supply fluctuation when the output of the comparator changes, the interference between the comparators 60 is suppressed, and suppression of image quality degradation is enabled.

[0077] Also, by arranging the second memory 80 below the first memory 71, the distance between the second memory and the output circuit 100 can be shortened, and problems that occur during transfer when horizontally transferring a signal to the output circuit 100 can be prevented. The same applies to the upper half of the circuit board 210.

[0078] As described above, in this embodiment, a part of the second column circuit group is arranged between the first memory 70 and the second memory 80 of the first column circuit group. Thereby, image quality degradation due to power supply fluctuation is suppressed.

[0079] (Sixth Embodiment) FIG. 10 shows a schematic diagram of a photoelectric conversion device according to the sixth embodiment. Descriptions common to those up to the fifth embodiment are omitted, and hereinafter, differences mainly from FIG. 9 will be described.

[0080] The photoelectric conversion device shown in FIG. 10 further includes a second circuit board 300 in addition to the pixel board 200 and the circuit board 210. Second memories 80, 81, 82, 83, output circuits 100, 101, and a frame memory 310 are arranged on the second circuit board 300. Since the pixel board 200 is the same as that in FIG. 9, it is omitted.

[0081] The lower half of the second circuit board 300 will be described. The first memories 70, 71 arranged on the circuit board 210 and the second memories 80, 81 arranged on the second circuit board 300 are connected to each other by inter-board joints 320, 321, respectively. The signals held in the second memories 80, 81 are transferred to the frame memory 310 and then output outside the chip from the output circuit 100.

[0082] In this embodiment, by providing the second memories 80, 81 on the second circuit board 300, an arrangement can be achieved in which the signal transfer line from the first memory 70 to the second memory 80 does not pass through the current source 41 and the comparator 61. Thereby, interference from digital signal transmission to the current source 41 and the comparator 61 can be prevented. The same applies to the upper half of the second circuit board 300.

[0083] As described above, in this embodiment, in a configuration where a part of the second column circuit group is arranged between the first memory 70 and the second memory 80 of the first column circuit group, a three-layer stacked structure is adopted. Thereby, the analog part that handles analog signals and the digital part that handles digital signals are separated, and it is possible to suppress the digital signal transmission of the first column circuit group from interfering with the analog circuits of the second column circuit group and causing image quality degradation.

[0084] In the present embodiment, the second memories 80 and 81 and subsequent components are provided on the second circuit board 300. However, the present invention is not limited to this. For example, the first memories 70 and 71 may also be provided on the second circuit board 300, and the comparators 60 and 61 and the first memories 70 and 71 may be connected by inter-board bonding.

[0085] Also, in the present embodiment, the current source 41, comparator 61, and first memory 71 are arranged in the opposite vertical direction with respect to the arrangement order of the current source 40, comparator 60, and first memory 70. In other words, they are arranged in a vertically flipped manner. As a result, on the second circuit board, the second memories 80 and 81 can be arranged close to each other, and effects such as sharing the control circuit (not shown) of the second memories 80 and 81 or sharing the control lines enable area reduction.

[0086] (Seventh Embodiment) The photoelectric conversion system according to the present embodiment will be described with reference to FIG. 11. FIG. 11 is a block diagram showing the schematic configuration of the photoelectric conversion system according to the present embodiment.

[0087] The photoelectric conversion devices described in the above first to sixth embodiments are applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, observation satellites, etc. Also, a camera module including an optical system such as a lens and an imaging device is included in the photoelectric conversion system. FIG. 15 exemplifies a block diagram of a digital still camera as an example of these.

[0088] The photoelectric conversion system illustrated in FIG. 11 is an imaging device 1004 which is an example of a photoelectric conversion device, and has a lens 1002 that forms an optical image of a subject on the imaging device 1004. Further, it has a diaphragm 1003 for varying the amount of light passing through the lens 1002, and a barrier 1001 for protecting the lens 1002. The lens 1002 and the diaphragm 1003 are an optical system that condenses light on the imaging device 1004. The imaging device 1004 is a photoelectric conversion device according to any of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0089] The photoelectric conversion system also has a signal processing unit 1007 which is an image generation unit that generates an image by processing an output signal output from the imaging device 1004. The signal processing unit 1007 performs operations of performing various corrections and compressions as necessary and outputting image data. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate different from the imaging device 1004.

[0090] The photoelectric conversion system further has a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. Further, the photoelectric conversion system has a recording medium 1012 such as a semiconductor memory for recording or reading imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading from the recording medium 1012. Note that the recording medium 1012 may be built in the photoelectric conversion system or may be detachable.

[0091] Furthermore, the photoelectric conversion system has an overall control and arithmetic unit 1009 that performs various operations and controls the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the imaging device 1004 and the signal processing unit 1007. Here, the timing signal and the like may be input from the outside, and the photoelectric conversion system may have at least the imaging device 1004 and the signal processing unit 1007 that processes the output signal output from the imaging device 1004.

[0092] The imaging device 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The photoelectric conversion system generates an image using this image data.

[0093] As described above, according to this embodiment, a photoelectric conversion system to which the photoelectric conversion device (imaging device) of any of the above embodiments is applied can be realized.

[0094] (Eighth Embodiment) The photoelectric conversion system and the moving body of this embodiment will be described with reference to FIG. 12. FIG. 12 is a diagram showing the configuration of the photoelectric conversion system and the moving body of this embodiment.

[0095] FIG. 12(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 300 includes an imaging device 310. The imaging device 310 is the photoelectric conversion device (imaging device) described in any of the above embodiments. The photoelectric conversion system 300 includes an image processing unit 312 that performs image processing on a plurality of image data acquired by the imaging device 310, and a parallax acquisition unit 314 that calculates parallax (phase difference of a parallax image) from the plurality of image data acquired by the photoelectric conversion system 300. Further, the photoelectric conversion system 300 includes a distance acquisition unit 316 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 318 that determines whether there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 314 and the distance acquisition unit 316 are examples of distance information acquisition means for acquiring distance information to an object. That is, the distance information is information related to parallax, defocus amount, distance to an object, and the like. The collision determination unit 318 may determine the possibility of collision using any of these distance information. The distance information acquisition means may be realized by dedicatedly designed hardware, or may be realized by a software module. Further, it may be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like, or may be realized by a combination of these.

[0096] The photoelectric conversion system 300 is connected to a vehicle information acquisition device 320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. Further, the photoelectric conversion system 300 is connected to a control ECU 330, which is a control unit that outputs a control signal for generating a braking force for the vehicle based on the determination result of the collision determination unit 318. Further, the photoelectric conversion system 300 is also connected to an alarm device 340 that issues an alarm to the driver based on the determination result of the collision determination unit 318. For example, when the determination result of the collision determination unit 318 indicates a high possibility of collision, the control ECU 330 performs vehicle control to avoid collision and reduce damage, such as applying brakes, returning the accelerator, and suppressing engine output. The alarm device 340 warns the user by sounding an alarm such as a sound, displaying alarm information on a screen of a car navigation system, or applying vibration to a seat belt or steering wheel.

[0097] In this embodiment, the photoelectric conversion system 300 images the surroundings of the vehicle, for example, the front or the rear. Fig. 12(b) shows the photoelectric conversion system when imaging the front of the vehicle (imaging range 350). The vehicle information acquisition device 320 sends an instruction to the photoelectric conversion system 300 or the imaging device 310. With such a configuration, the ranging accuracy can be further improved.

[0098] In the above, an example of controlling to avoid collision with other vehicles has been described, but it is also applicable to control for automatically driving while following other vehicles and control for automatically driving without deviating from the lane. Further, the photoelectric conversion system is not limited to vehicles such as the host vehicle, and can be applied to moving bodies (moving devices) such as ships, airplanes, or industrial robots. In addition, it can be applied not only to moving bodies but also to devices that widely utilize object recognition, such as an advanced road traffic system (ITS).

[0099] [Modified Embodiment] The present invention is not limited to the above embodiment and can be variously modified.

[0100] For example, embodiments of the present invention also include cases where a part of the configuration of one embodiment is added to another embodiment, or cases where a part of the configuration of one embodiment is replaced with that of another embodiment.

[0101] In addition, the photoelectric conversion systems shown in the sixth and seventh embodiments above are examples of photoelectric conversion systems to which a photoelectric conversion device can be applied, and the photoelectric conversion systems applicable to the photoelectric conversion device of the present invention are not limited to the configurations shown in FIGS. 11 and 12.

[0102] Note that the above embodiments are merely specific examples for implementing the present invention, and the technical scope of the present invention should not be construed as being limited thereby. That is, the present invention can be implemented in various forms without departing from its technical idea or its main features.

Description of Reference Numerals

[0103] 10 pixel 30 signal line 40 current source 60 comparator 70 first memory 80 second memory

Claims

1. having a pixel array including a plurality of pixels, wherein a first pixel and a second pixel among the plurality of pixels are arranged in different pixel columns, corresponding to different colors, the first pixel is connected to a first circuit group via a first signal line, the second pixel is connected to a second circuit group via a second signal line, having a first circuit, a second circuit included in the first circuit group, and a third circuit included in the second circuit group and having the same function as the first circuit, a photoelectric conversion device, wherein in a top view, the second circuit is arranged between the first circuit and the third circuit.

2. The photoelectric conversion device according to claim 1, wherein corresponding colors of a first color filter covering the first pixel and a second color filter covering the second pixel are different.

3. The first circuit is a transistor, The photoelectric conversion device according to claim 1 or claim 2, wherein the third circuit is a transistor having the same function as the first circuit.

4. each of the first circuit group and the second circuit group includes a comparator, a first memory for holding a signal according to an output of the comparator, and a second memory for capturing an output of the first memory, and The photoelectric conversion device according to any one of claims 1 to 3, wherein the second memory of the first circuit group is arranged between the first memory of the first circuit group and the first memory of the second circuit group.

5. having a pixel array including a first pixel and a second pixel, a first circuit group connected to the first pixel via a first signal line, a second circuit group connected to the second pixel via a second signal line, each of the first circuit group and the second circuit group includes a comparator, a first memory for holding a signal according to an output of the comparator, and a second memory for capturing an output of the first memory, and a photoelectric conversion device, wherein at least a part of the second circuit group is arranged between the first memory of the first circuit group and the second memory of the first circuit group.

6. The photoelectric conversion device according to claim 5, wherein the first memory of the second circuit group is arranged between the first memory of the first circuit group and the second memory of the first circuit group.

7. The photoelectric conversion device according to claim 5 or claim 6, wherein the first circuit group and the second circuit group process signals corresponding to different colors.

8. The photoelectric conversion device according to any one of claims 1 to 7, wherein a part of the arrangement of the first circuit group is an arrangement obtained by inverting a part of the second circuit group.

9. The first pixel and the second pixel are formed on a first semiconductor substrate, The first circuit group and the second circuit group are formed on a second semiconductor substrate, The photoelectric conversion device according to any one of claims 1 to 8, wherein a plurality of semiconductor substrates including the first semiconductor substrate and the second semiconductor substrate are stacked.

10. Each of the circuits included in the first circuit group and the second circuit group includes an analog part and a digital part, The photoelectric conversion device according to claim 9, wherein a semiconductor substrate on which the analog part of the circuit is arranged is different from a semiconductor substrate on which the digital part is arranged.

11. The photoelectric conversion device according to claim 10, wherein the analog part includes a current source or a comparator.

12. The photoelectric conversion device according to claim 10 or claim 11, wherein the digital part includes a latch circuit.

13. The photoelectric conversion device according to any one of claims 1 to 12, wherein the first circuit group includes a current source of the first signal line, and the second circuit group includes a current source of the second signal line.

14. The photoelectric conversion device according to any one of claims 1 to 13, wherein each of the first circuit group and the second circuit group includes a comparator.

15. A photoelectric conversion system comprising: the photoelectric conversion device according to any one of claims 1 to 14; and a signal processing unit that generates an image using a signal output by the photoelectric conversion device.

16. A moving body including the photoelectric conversion device according to any one of claims 1 to 14, the moving body having a control unit that controls the movement of the moving body using a signal output by the photoelectric conversion device.

17. A semiconductor substrate laminated on a semiconductor substrate having a pixel array including a first pixel and a second pixel arranged in different pixel columns and corresponding to different colors, having a first circuit group and a second circuit group, The first pixel is connected to the first circuit group via a first signal line, The second pixel is connected to the second circuit group via a second signal line, The first circuit group includes a first circuit, a second circuit, and a third circuit included in the second circuit group and having the same function as the first circuit, A semiconductor substrate, wherein in a top view, the second circuit is disposed between the first circuit and the third circuit.

18. A semiconductor substrate laminated on a semiconductor substrate having a pixel array including a plurality of pixels, A first circuit group connected to a first pixel via a first signal line, A second circuit group connected to a second pixel via a second signal line, Each of the first circuit group and the second circuit group includes a comparator, a first memory that holds a signal corresponding to an output of the comparator, and a second memory that captures an output of the first memory, A semiconductor substrate, wherein at least a part of the second circuit group is disposed between the first memory and the second memory of the first circuit group.

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