Method for lifting, method for manufacturing another substrate, and photomask

Abstract

To realize increase of size and elaboration of a receptor substrate in a lifting device and reduction of a tact time, while keeping a high accuracy of a lifting position.SOLUTION: Each stage group which moves while holding a doner substrate on which a lift target object is mounted and / or a beam shaping optical system and a reduction projection optical system, and a stage group which holds a receptor substrate as a lifting destination are formed on surface plates of separate solid bodies. Vibrations in association with relative scanning of each substrate to laser beams or abnormalities of accuracy of synchronization positions of stages responsible for the scanning are minimized.SELECTED DRAWING: Figure 1A

Description

Technical Field

[0001] The present invention relates to an apparatus for accurately lifting an object located on a donor substrate onto a receptor substrate using laser irradiation.

Background Art

[0002] There is a technique of irradiating a laser on an organic EL layer on a donor substrate and lifting it onto a facing circuit board. Patent Document 1 discloses, as such a technique, converting one laser beam into a plurality of rectangular laser beams having a rectangular uniform intensity distribution, arranging these in series and at equal intervals, and irradiating a predetermined region of the donor substrate with a predetermined number of overlaps at intervals of a certain time or more, causing absorption in a metal foil positioned between the donor substrate and the organic EL layer, generating an elastic wave, and thereby lifting the peeled organic EL layer onto a facing circuit board.

[0003] In this technique, a spacer having a suitable value of 80 to 100 [μm] is sandwiched between the donor substrate and the circuit board, and an integrated structure with a constant interval between them is placed on a single stage and scanned relative to the laser beam. However, in this case, a process of integrating the opposed donor substrate and circuit board is separately required, and a donor substrate having the same size as the circuit board is required, leading to an increase in manufacturing cost and the size of the apparatus with the demand for a larger circuit board.

[0004] Similarly, as a technique for lifting an organic EL layer on a donor substrate onto a facing circuit board, a light absorption layer is provided between the donor substrate and the organic EL layer, the laser beam irradiated on this light absorption layer is absorbed to generate a shock wave, and a technique of lifting it onto a facing circuit board with an interval of 10 to 100 [μm] is disclosed in Patent Document 2. However, there is no disclosure of a laser beam scanning method, the stage configuration for realizing it, and thus, it cannot be referred to as a technique for maintaining and improving the lift position accuracy capable of coping with an increase in the size of the circuit board.

[0005] In addition, in an exposure apparatus used for manufacturing a semiconductor device, a technique related to the step-and-scan method is disclosed in Patent Document 3. The basic idea is to intermittently expose a row of shot regions along the scanning exposure direction of the wafer stage, skipping some of the shot regions in the middle, without stopping the wafer stage in the middle. That is, it includes a reticle stage for holding a reticle, a wafer stage for holding a wafer, and a projection optical system for projecting the pattern of the reticle onto the wafer. Exposure is performed while scanning both the reticle stage and the wafer stage with respect to the projection optical system, and the pattern of the reticle is sequentially projected onto a plurality of shot regions of the wafer. It is an exposure apparatus that intermittently exposes a plurality of shot regions on the wafer arranged along the scanning direction while scanning and moving the wafer stage without stopping it. Thereby, in the requirements of increasing the size of the wafer and the processing speed, compared with the step-and-repeat method that repeatedly accelerates and decelerates the wafer stage, the influence of vibrations and shakes associated with the scanning of the stage on the exposure accuracy can be reduced.

[0006] However, the technique disclosed in this Patent Document 3 is a technique of a semiconductor exposure apparatus based on reduction projection exposure, and the technical field is different from the lift technique of the present invention. That is, the configuration and scanning technique of the reticle stage and the wafer stage in the exposure apparatus are completely different from the stage configuration and scanning technique for reducing and projecting the mask pattern onto the object on the donor substrate with high positional accuracy and then lifting the object onto the receptor substrate with the same high positional accuracy in the present invention. Therefore, as the specific stage configuration and its scanning technique in the present invention, this cannot be referred to.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

[0008] A configuration in which both a donor stage for holding a donor substrate and an optical stage for holding an optical system placed thereon, and a receptor stage for holding a receptor substrate are independent mechanisms. Furthermore, instead of directly placing the optical stage on the donor stage, a configuration in which each is independently installed on a highly rigid surface plate minimizes the influence of vibrations and various errors associated with the scanning of each stage on the synchronous position accuracy between the stages. As a result, an object is to provide a lift device that contributes to increasing the size, densification, and shortening of the tact time of the receptor substrate while maintaining the lift position accuracy. [Means for Solving the Problems]

[0009] The first invention is an apparatus for selectively peeling an object located on the surface of a moving donor substrate by irradiating the back surface of the donor substrate with pulsed laser light toward the object, and lifting the peeled object onto a receptor substrate that moves while facing the donor substrate. The apparatus includes a pulsed laser device, a telescope for making the pulsed laser light emitted from the laser device into parallel light, a shaping optical system for uniformly shaping the spatial intensity distribution of the pulsed laser light that has passed through the telescope, a mask for passing the pulsed laser light shaped by the shaping optical system in a predetermined pattern, a field lens located between the shaping optical system and the mask, a projection lens for reducing and projecting the laser light that has passed through the pattern of the mask onto the surface of the donor substrate, a mask stage for holding the field lens and the mask, an optical stage for holding the shaping optical system, the mask stage, and the projection lens, a donor stage for holding the donor substrate with its back surface facing the incident side of the laser light, a receptor stage for holding the receptor substrate, and a programmable multi-axis control device having a trigger output function and a stage control function for the pulsed laser light oscillation. The receptor stage has a Y-axis when the horizontal plane is the XY plane, a Z-axis in the vertical direction, and a θ-axis in the XY plane. The donor stage has an X-axis, a Y-axis, and a θ-axis. The projection lens is held by the optical stage together with a Z-axis stage for the projection lens. The telescope, the shaping optical system, the field lens, the mask, and the projection lens constitute a reduction projection optical system for reducing and projecting the pattern of the mask onto the surface of the donor substrate. The X-axis of the donor stage is installed on a surface plate 1, the Y-axis of the receptor stage is installed on a surface plate 2 different from the surface plate 1, and the Y-axis of the donor stage is suspended from the X-axis of the donor stage. It is a lifting device characterized by this.

[0010] Here, the "moving" substrate refers to the case where it moves without stopping even during the irradiation of pulsed laser light (denoted as "LS" in FIG. 1A. Although FIG. 1A shows the main components of the second invention, it is referred to because it includes components common to the configuration of the first invention. The same applies hereinafter.), and the case where it stops during the irradiation of pulsed laser light and repeats moving and stopping. These are selected according to the lift process by the lift device according to the present invention and the required tact time. Further, it includes the configuration where the donor substrate (D) repeats moving and stopping and the receptor substrate (R) does not stop, and the reverse case. When only one shot is used for peeling the object from the donor substrate and a high tact time is required, preferably, the donor substrate and the receptor substrate are configured to move at the same or different speeds without stopping. On the other hand, when it is desired to stack the object with a certain thickness, etc., there may be a case where the donor substrate moves without stopping and the receptor substrate stops for a certain number of shots.

[0011] Also, the "object" is not particularly limited, and includes a lift object provided integrally on the donor substrate or on the donor substrate via a light absorption layer (not shown in FIG. 1A), such as a thin film represented by the organic EL layer described in the above-mentioned patent document, and those arranged in a large number in a fine element shape and regularly, but is not limited thereto. In addition, the lift mechanism includes those in which the light absorption layer irradiated with laser light generates a shock wave, whereby the object is peeled from the donor substrate and lifted toward the receptor substrate, and those peeled by laser light directly irradiated on the object without having a light absorption layer, but is not limited thereto.

[0012] The material of the donor substrate only needs to have a transmission characteristic with respect to the wavelength of the laser light, and a material with little deflection amount due to the enlargement of the substrate is desirable. When the deflection amount is so large that it cannot satisfy the uniformity of the gap between the donor substrate and the receptor substrate, in addition to mechanically correcting by the holding method of the donor substrate in the donor stage (Yd, θd), for example, by providing an adsorption area near the center of the donor substrate, there is a method of correcting using a gap sensor by combining the height sensors described later.

[0013] In the present invention, the movable range of the donor stage includes the XY plane area where the donor substrate should move in order to lift an object located near the edge of the donor substrate onto the receptor substrate, and refers to a range that depends on the size of the receptor substrate. As an example, when the size of the donor substrate in the XY plane is 200×200 [mm] and the receptor substrate is also 400×400 [mm], the predetermined range where the donor stage (Xd, Yd) should move is approximately 800×800 [mm]. The state is shown in FIG. 4. In addition, if it is necessary to move further for the removal of the donor substrate, that area is also included.

[0014] Also, although the material of the "surface plate" is not particularly limited, it must be a material with extremely high rigidity. For the surface plate 1 (G1), it is desirable to have a "C" shape or a "□" shape in a top view to provide rigidity. In FIG. 1A, the surface plate 2 is shown as a single shape, but specifically, it may be configured as two surface plates installed in the Y-axis direction, with a linear scale and a linear motor placed in the middle. Note that the surface plate 1 and the surface plate 2 can be structured to be fixed on the same base surface plate (G). Furthermore, G1 may also be configured as a combination of a surface plate 11 (G11) and a surface plate 12 (G12).

[0015] And for the material of any surface plate, it is necessary to use a member with high rigidity such as steel, stone, or ceramic material. For example, for this stone, a stone represented by granite (granite / awabi stone) can be used, but it is not limited to this. Also, it is not necessary for all surface plates to be composed of the same material.

[0016] Regarding the movement of each stage, it will be described in detail in the embodiments described later, but generally the following operations are performed. First, the X-axis (Xd) of the donor stage is installed on G1 in a state where the Y-axis (Yd) of the donor stage is suspended and moves in the X-axis direction. And this movement changes the relative position along the X-axis between the donor substrate and the receptor substrate. The state of the movement is shown in Fig. 1B. Note that in any of the figures, details such as the movable table and linear guide of the stage are not shown.

[0017] The installation method of the optical stage (Xo) on the surface plate or the like is not limited. For example, various mechanisms can be selected, such as a state of being placed on Xd, a state of being installed on the same surface plate where Xd is installed, or a state of being placed on a surface plate different from Xd. Xo moves in the X-axis direction in parallel with Xd, and moves these integrally without changing the relative positions of the shaping optical system (H), the field lens (F), the mask (M), and the projection lens (Pl). On the other hand, the movement of Xo along this X-axis changes the relative positional relationship between the donor substrate and the projection lens. The state of the movement is shown in Fig. 1C.

[0018] Note that when it is not necessary to change the relative position in the X-axis direction between the donor substrate and the projection lens, a configuration that always moves together with the X-axis of the donor stage, that is, the optical stage is omitted, and the homogenizer, the field lens, the mask, and the projection lens may all be fixed on the X-axis of the donor stage or on a separately provided surface plate.

[0019] The mask is held by the mask stage, and the mask stage has a W-axis that moves in the X-axis direction together with at least the field lens. Preferably, it also has a U-axis in the Y-axis direction, a V-axis that moves in the Z-axis direction, an R-axis that is a rotation axis in the YZ plane, a TV-axis that adjusts the inclination with respect to the V-axis, and a TU-axis that adjusts the inclination with respect to the U-axis. Further, in order to suppress the input of heat quantity due to laser irradiation to the mask, an aperture mask having a pattern one size larger than the mask pattern may be provided in front of the mask, and a double mask structure may be formed in combination with the mask.

[0020] The Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the receptor stage move at the same or different speeds while keeping the gap between the donor substrate and the receptor substrate constant during the lifting process and maintaining extremely high parallelism. Then, by limiting the movement mechanism of the receptor substrate to the Y-axis and separating it from the movement mechanism of the donor substrate due to the above-described structure of the movement method of each stage group and the surface plate supporting them, etc., the interference between the movement areas of the respective substrates and the mutual influence due to vibration are suppressed, and it is possible to cope with an increase in size and densification of the receptor substrate.

[0021] A second invention is a lifting device characterized in that, in the first invention, the X-axis of the donor stage is placed on the surface plate 1, and the optical stage is placed on the X-axis of the donor stage.

[0022] FIG. 1A shows the main components (side view) of the lifting device according to this second invention. FIG. 1B shows the state in which Xd moves while carrying Xo from the state of FIG. 1A (side view). FIG. 1C shows the state in which Xo moves on Xd from the state of FIG. 1B (side view). FIG. 1D shows a top view of FIG. 1C.

[0023] A third invention is a lifting device characterized in that, in the first invention, the optical stage is placed on the surface plate 1, and the X-axis of the donor stage is suspended from the surface plate 1.

[0024] FIG. 2A shows the main components (side view) of the lifting device according to this third invention. FIG. 2B shows the state in which Xd and Xo move the same distance on G1 (Xd is suspended from G1) from the state of FIG. 2A (side view). FIG. 2C shows the state in which only Xo moves on G1 from the state of FIG. 2B (side view).

[0025] A fourth invention is a lifting device characterized in that, in the first invention, the X-axis of the donor stage is installed on the surface plate 1, and the optical stage is placed on a surface plate 3 different from both the surface plate 1 and the surface plate 2.

[0026] Here, "installed on the surface plate 1" includes, but is not limited to, the state of being placed on the surface plate 1 and the state of being suspended from the surface plate 1.

[0027] The fifth invention is the lift device according to the first invention, characterized in that between the X-axis of the donor stage and the surface plate 1, and between the X-axis of the donor stage and the Y-axis of the donor stage, there are respectively rotation adjustment mechanisms for finely adjusting the installation angle in the XY plane between the two.

[0028] Here, an example of the rotation adjustment mechanism (RP) installed between the X-axis (Xd) of the donor stage and the surface plate 1 (G1) is shown in Fig. 3A. In Fig. 3A, the left figure represents a top view and the right figure represents a side view from the X-axis direction. And in the top view, the row of holes located on the outside are used for fixing to G1 and have "play" (margin, looseness) to provide a rotation adjustment function. Further, the two rows of holes located on the inside in the top view are holes through which screws for fixing the linear guide between this RP and Xd pass. It should be noted that it is also possible to make the side with "play" the hole for the linear guide of this Xd, but when fixing the two linear guides independently and in parallel, the difficulty level of the installation process may increase.

[0029] On the other hand, an example of the RP installed between Xd and the Y-axis (Yd) of the donor stage suspended therefrom is shown in Fig. 3B. In the top view, the two rows of holes located on the outside are used for fixing to Xd and have "play" to provide a rotation adjustment function. Further, the two rows of holes arranged in the Y-axis direction are used for fixing to Yd.

[0030] In addition, as the RP installed between G1 and Xd, an RP different from the above can also be used. For example, (although illustration is omitted) a fulcrum (rotation axis in the Z-axis direction) for rotating and adjusting the RP on which Xd is placed in the XY plane with respect to G1 is provided on the contact surface between the RP and G1, and a force point with respect to the fulcrum is provided on the side surface (vertical plane) of the RP sufficiently separated from the fulcrum. A large screw for horizontally pushing in toward the force point is installed on G1 near this force point. Similarly, a large screw is installed on the side surface of the RP on the opposite side. Thereby, this RP on which Xd is placed can be rotated in the XY plane around the fulcrum with respect to G1 on the order of [μrad].

[0031] The sixth invention is the lift device according to the second invention, characterized in that between the X-axis of the donor stage and the surface plate 1, between the X-axis of the donor stage and the optical stage, and between the X-axis of the donor stage and the Y-axis of the donor stage, there are respectively rotation adjustment mechanisms for finely adjusting the installation angle in the XY plane between the two.

[0032] As these RPs, for example, the RP used between G1 and Xd shown in FIG. 3A above, the RP used between Xd and Xo shown in FIG. 3C, and the RP used between Xd and Yd shown in FIG. 3B can be used.

[0033] The seventh invention is the lift device according to the third invention, characterized in that between the X-axis of the donor stage and the surface plate 1, between the optical stage and the surface plate 1, and between the X-axis of the donor stage and the Y-axis of the donor stage, there are respectively rotation adjustment mechanisms for finely adjusting the installation angle in the XY plane between the two.

[0034] Here, for example, the RP shown in FIG. 3A is used as the rotation adjustment mechanism between Xo and G1 and between Xd and G1, respectively, while the RP shown in FIG. 3B is used as the rotation adjustment mechanism between Xd and Yd. The former RP has holes through which the linear guide fixing screws for Xo and Xd pass, and the installation angle in the XY plane between the RP to which the respective stage linear guides are fixed and G1 is adjusted by the "play" provided in the holes.

[0035] The eighth invention is the lift device according to the fourth invention, further comprising a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X-axis of the donor stage and the surface plate 1, between the optical stage and the surface plate 3, and between the X-axis and the Y-axis of the donor stage.

[0036] The ninth invention is the lift device according to any one of the first to eighth inventions, wherein the pulsed laser device is an excimer laser.

[0037] Here, the oscillation wavelength of the excimer laser is mainly 193, 248, 308, or 351 [nm], and is preferably selected from these according to the material of the light absorption layer and the light absorption characteristics of the object.

[0038] The tenth invention is the lift device according to the ninth invention, further comprising a pulse shutter for blocking any pulse train of the laser pulses emitted from the pulsed laser device.

[0039] The laser device that emits pulses receives a trigger signal from the programmable multi-axis control device and starts oscillation. However, it is known that the energy of the pulses within a certain number or within a certain time immediately after the oscillation is unstable to the extent that it cannot be used depending on its application. Therefore, it is necessary to eliminate this unstable pulse group by a mechanical shutter operation. Specifically, for example, in the case of an excimer laser oscillating at 1 [kHz], the time window between adjacent laser pulses is about 1 [ms], and a high-speed shutter function capable of moving (crossing) a certain distance within this time is required. This certain distance depends on the spatial size of the laser beam at the location where the shutter is operated. If the distance is 5 [mm], the required shutter operation speed is 5 [m / s], and an ultra-high-speed shutter that takes an optical element in and out of the optical path using a voice coil or the like is required. Even if the spatial size is reduced by a shaping optical system or the like and the distance that the shutter member crosses can be shortened, it is easily damaged depending on the energy density of the laser beam.

[0040] According to an eleventh aspect of the invention, in any one of the first to tenth aspects of the invention, the programmable multi-axis control device has a function of simultaneously controlling at least the Y-axis of the receptor stage and the Y-axis of the donor stage, and is provided with means for correcting the movement position error using two-dimensional distribution correction value data created in advance for correcting the movement position error of each stage. A lift device characterized by that.

[0041] For example, two-dimensional distribution correction value data information in a pseudo XY plane formed by any combination of Xd or Xo and Yr or Yd is used to correct the positions of the receptor substrate and the donor substrate during laser beam irradiation. The factors of the position error to be corrected include, but are not limited to, pitching, yawing, and rolling accompanying the movement of each stage. In addition, the parameters for determining the correction values include, in addition to the position information of each stage, the moving speeds of Yr and Yd and their ratio.

[0042] Invention 12 is a lift device according to any one of Inventions 1 to 11, characterized in that a high-magnification camera for monitoring the position of the donor substrate is installed on the Z-axis of the receptor stage, or a high-magnification camera for monitoring the position of the receptor substrate is installed on the X-axis of the donor stage, or a part that moves together with the X-axis, or the optical stage, or a part that moves together with the optical stage.

[0043] Here, the "part that moves together with the X-axis of the donor stage" includes Yd suspended from Xd. In the present invention, the parallelism between the Y-axes of each stage, the parallelism between the X-axes, and the perpendicularity between the Y-axis and the X-axis of each stage are important parameters that affect the lift position accuracy. When verifying the parallelism and perpendicularity during the assembly of each stage, the displacement amount in the direction orthogonal to the moving distance of each stage holding the alignment substrate is monitored with a high-magnification and high-resolution camera, and the perpendicularity is adjusted using the rotation adjustment mechanism. Also, when adjusting the parallelism between Yr and Yd, both stages are moved (run side by side) synchronously by the same distance, and a high-magnification camera attached to one stage observes whether the position of the pattern-matched alignment mark image (such as a cross mark) attached to the opposing stage remains stationary without moving. In this case, movement in the Y-axis direction means an abnormality in the synchronization between Yd and Yr, and movement in the X-axis direction means an adjustment error in the parallelism between Yd and Yr.

[0044] Note that a CCD camera is generally used as the high-magnification camera. Although the magnification etc. depend on the lift position accuracy, as an example, when detecting a displacement amount on the order of [μrad] as described above, that is, when detecting a displacement amount of 1 [μm] with respect to a stage movement distance of 1 [m], it is advisable to use one with a resolution of 1 [μm] and a magnification of about 20 to 50 times.

[0045] The 13th invention is a lifting device according to any one of the 1st to 12th inventions, characterized in that the donor stage and the receptor stage are provided with a gap sensor for measuring the gap between the surface (lower surface) of the donor substrate and the surface of the receptor substrate.

[0046] Here, the gap sensor is a combination of height sensors installed on each of the donor and receptor stages. The height sensor installed on the donor stage measures the distance to the receptor substrate, and the height sensor installed on the receptor stage measures the distance to the donor substrate. The gap between the donor substrate and the receptor substrate is calculated from both measurement values and the height information of the height sensors.

[0047] The 14th invention is a lifting device according to any one of the 11th to 13th inventions, characterized in that position measuring means using a laser interferometer is provided for the Y-axis of the receptor stage and the Y-axis of the donor stage, respectively.

[0048] As the configuration of the laser interferometer for the Y-axis (Yr) of the receptor stage, it can be configured to include a mirror (Ic) held by a part that moves with Yr, an interferometer laser (IL) fixed to a surface plate, such as surface plate 2 (G2), that is not easily affected by vibrations or the like caused by the movement, and a quarter-wave plate or the like (not shown). Further, as the mirror, preferably, a three-axis corner cube (retroreflector) is used, and it is desirable to be as close as possible to the position (height) of the receptor substrate. A schematic is shown in Fig. 5A. (Illustrations of the Z-axis and θ-axis of the donor stage group and the receptor stage are omitted.)

[0049] Although Yr is controlled by a programmable multi-axis control device based on the position information from its linear encoder, this laser interferometer is used for calibration of this linear encoder and further for calibration when finely adjusting the gear ratio in the gear mode operation of Yr and Yd, which will be described later.

[0050] As the configuration of the laser interferometer for the Y-axis (Yd) of the donor stage, it can be configured to include Ic held on a surface that moves together with Yd suspended from Xd, IL also fixed to Xd, and a quarter-wave plate etc. (not shown in the figure). Here too, as the mirror, preferably a three-axis corner cube (retroreflector) is used, and it is desirable to be as close as possible to the position (height) of the donor substrate. This is schematically shown in Fig. 5B. (The receptor stage group is not shown in the figure.) Note that for the selection of the detection method of any of the lasers for the interferometer, the optimal one may be selected according to the required lift position accuracy.

[0051] The 15th invention is a lift device characterized in that, in any of the inventions from the 1st to the 14th, it is provided with a confocal beam profiler having an imaging surface at a position conjugate to the position where the mask pattern is reduced and projected by the projection lens to form an image.

[0052] With this confocal beam profiler, the position and spatial intensity distribution state of the laser light reduced and projected onto the surface of the donor substrate, as well as its imaging state, can be monitored in real time with an accuracy equivalent to the imaging resolution of the reduction imaging optical system.

[0053] The 16th invention is a method of using a lift device according to any of the inventions from the 13th to the 15th, characterized in that, in any of the inventions from the 13th to the 15th, the deflection amount of the donor substrate is measured in advance together with the XY position information of the donor substrate using the gap sensor, and based on the two-dimensional distribution data of the deflection amount obtained by the measurement, the gap between the donor substrate and the receptor substrate is corrected while lifting using the adjustment of the Z-axis (Zr) of the receptor stage or the Z-axis stage of the projection lens.

[0054] The 17th invention is a method for adjusting the parallelism between the Y-axis of the receptor stage and the Y-axis of the donor stage in the assembly process of the lift device according to any one of the 11th to 16th inventions. Based on the Y-axis that has been adjusted for straightness together with the Z-axis and θ-axis of the receptor stage, the perpendicularity between the Y-axis of the receptor stage and the X-axis of the donor stage is adjusted by a rotation adjustment mechanism located between the surface plate 1 and the X-axis of the donor stage. Then, the Y-axis of the donor stage suspended from the X-axis of the donor stage whose perpendicularity has been adjusted is made to run in parallel synchronously with the Y-axis of the receptor stage, and an alignment mark on the Y-axis of the opposing donor stage is observed by a high-magnification camera attached to a part that moves together with the Y-axis of the receptor stage. Based on the result of this observation, the parallelism between the Y-axis of the receptor stage and the Y-axis of the donor stage is adjusted by a rotation adjustment mechanism between the X-axis of the donor stage and the Y-axis of the donor stage. The adjustment method of the lift device according to any one of the 11th to 16th inventions is characterized by including these steps in this order.

[0055] Note that the high-magnification camera is preferably attached to the highest and most rigid part among the stages, plates, etc. placed on Yr in order to accurately confirm and adjust the parallelism between Yd and Yr.

Effect of the Invention

[0056] The present invention realizes the enlargement of the receptor substrate and the shortening of the tact time in the lift device while maintaining high lift position accuracy based on the high synchronous position accuracy between the donor substrate and the receptor substrate.

Brief Explanation of the Drawings

[0057]

Figure 1A

Figure 1B

Figure 1C

Figure 1D

Figure 2A

Figure 2B

Figure 2C

Figure 3A

Figure 3B

Figure 3C

Figure 4

Figure 5A

Figure 5B

Figure 6

Figure 7

Figure 8

Figure 9A

Figure 9B

Figure 9C

Figure 10

Figure 11

Figure 12

Figure 13A

Figure 13B

Figure 13C

Embodiments for Carrying Out the Invention

[0058] Hereinafter, with reference to the drawings, the specific configuration of the lift device according to the present invention will be described in detail.

Examples

[0059] In the present Example 1, an object in a layer (solid film) formed integrally via a light absorption layer on a donor substrate having a size of 200×200 [mm] is lifted as an element-shaped lift object having a shape of 10×10 [μm] per piece in a matrix of 12,000 in length × 12,000 in width, a total of 1.44 million, with respect to a receptor substrate having a size of 400×400 [mm]. The lift positions of these 1.44 million are at a position accuracy of ±1 [μm], and the pitch in each longitudinal and lateral direction is 30 [μm].

[0060] First, the main components of the lift device according to the implementation of the present invention are shown in FIG. 1A. In FIG. 1A, the illustration of the laser device, the control device, and other monitors is omitted, and the X-axis, Y-axis, and Z-axis directions are shown in the figure. The surface plates 1 (G1), 11 (G11), 12 (G12), and 2 (G2) are all made of granite surface plates. And synthetic high-quality iron is used for the base surface plate (G). Note that this example is an example based on the configuration of the sixth invention described above.

[0061] The configuration of the lift device according to Example 1 of the present invention will be described in order along the propagation of the laser light from the point where pulsed laser light is emitted from the laser device until it irradiates the object on the donor substrate. First, the laser device used in this Example 1 is an excimer laser having an oscillation wavelength of 248 [nm]. The spatial distribution of the emitted laser light is approximately 8 × 24 [mm], and the beam divergence angle is 1 × 3 [mrad]. Both are in the notation of (vertical × horizontal), and the numerical values are FWHM.

[0062] Note that the specifications of excimer lasers are various, including differences in output, repetition frequency, beam size, beam divergence angle, etc., and there are even those with vertically elongated laser light (where the vertical and horizontal are reversed). However, there are many excimer lasers that can be used in this Example 1 through the addition, omission, or design change of the optical system. Also, the laser device is generally installed on a base different from the base on which the stage group of the lift device is installed (a laser surface plate), although it also depends on its size.

[0063] The emitted light from the excimer laser enters the telescopic optical system and propagates to the shaping optical system ahead. Here, as shown in FIG. 1A, the shaping optical system is held on the optical stage (Xo) along the X-axis of its optical axis, and the optical stage is installed on the X-axis (Xd) of the donor stage that moves the donor substrate. And the laser light just before entering this shaping optical system is adjusted by the telescopic optical system so as to be approximately parallel light at any position within the movement range of the X-axis of this donor stage. Therefore, regardless of the movement of the X-axis in the Xd and / or Xo directions, it always enters the shaping optical system with approximately the same size and the same angle (perpendicular). In this Example 1, the size is approximately 25 × 25 [mm] (vertical × horizontal).

[0064] The shaping optical system (H) in this Example 1 is a combination of two sets of one-axis cylindrical lens arrays, each set consisting of two lenses, which are combined at right angles in a plane perpendicular to the optical axis direction. The first-stage lens array within each set is arranged such that an image is formed on the mask (M) by the subsequent-stage lens array and a condenser lens (not shown) located behind it.

[0065] The laser beam that has passed through the shaping optical system enters the mask after passing through the field lens (F) that constitutes an image-side telecentric reduction projection optical system in combination with the projection lens (Pl). The size of the laser beam on the mask is 1×50 [mm] (FWHM), and the size of the region where the spatial intensity distribution uniformity is within ±5% is maintained at 0.5×45 [mm] or more.

[0066] The mask is fixed to the mask stage, and this mask stage has a total of six-axis adjustment mechanisms including the W-axis that moves in the X-axis direction together with the field lens as described above, the U-axis in the Y-axis direction, the V-axis that moves in the Z-axis direction, the R-axis which is the rotation axis in the YZ plane, the TV-axis that adjusts the inclination with respect to the V-axis, and the TU-axis that adjusts the inclination with respect to the U-axis.

[0067] For the mask in this Example 1, a synthetic quartz plate with a pattern drawn (applied) by chromium plating is used. Its schematic is shown in Fig. 6. In this mask, the white window portion (a) where no chromium plating is applied transmits the laser beam, and the colored portion (b) where chromium plating is applied blocks the laser beam. The shape (a) of one window is 50×50 [μm], and these are arranged in the X-axis direction (in a row) at intervals of 150 [μm] over a length of 43.85 [mm], for a total of 300. Also, the surface where chromium plating is applied is the laser beam emission side, and on the other hand, an antireflection film for 248 [nm] is applied to the incident side. Furthermore, instead of chromium plating, aluminum evaporation or a dielectric multilayer film can also be used.

[0068] In the case of a lift process in which a plurality of patterns are switched and used on a single mask, different masks with different patterns can be used as long as they are within the range of the size of the laser beam irradiated onto the mask from the shaping optical system and within the movable range of the mask stage.

[0069] Also, in FIG. 7, when using a lift process in which the donor substrate (D) is scanned a plurality of times or reciprocally at the same speed while the receptor substrate (R) is scanned once (including stops during the process), the mask pattern shown in FIG. 6 is not a single row, but a plurality of rows of patterns (however, laser irradiation is intermittent and selective among the mask patterns. In FIG. 7, it is shown as a 3×2 column matrix) can also be adopted. This makes it possible to use a donor substrate smaller in size than the receptor substrate.

[0070] The laser beam that has passed through the mask pattern has its propagation direction changed vertically downward (-Z direction) by the catoptric mirror and enters the projection lens. This projection lens is provided with an antireflection film for 248 nm and has a reduction magnification of 1 / 5. The details are as shown in Table 1 below.

[0071]

Table 1

[0072] The laser beam emitted from the projection lens enters from the back surface of the donor substrate and is accurately projected onto a predetermined position of the light absorption layer formed on its surface (lower surface) at a reduced size of 1 / 5 of the mask pattern. Here, the predetermined position in the XY plane is determined after adjustment by the X-axis (Xd), Y-axis (Yd), and θ-axis (θd) of the donor stage based on alignment marks or the like previously attached to the donor substrate.

[0073] To adjust the image plane of the mask pattern by the projection lens to be in focus at the interface between the surface of the donor substrate and the light absorption layer, the position of the Z-axis stage (Zl) of the projection lens and the W-axis of the mask stage on which the field lens (F) is placed are adjusted. Note that an adjustment function (Z-axis stage) in the Z-axis direction of the donor substrate can also be added, but it is necessary to consider the decrease in lift position accuracy due to the increase in the additional load on the X-axis (Xd) of the donor stage.

[0074] When adjusting the imaging position at the interface between the surface of the donor substrate and the light absorption layer, a real-time monitor using a confocal beam profiler (BP) having an imaging plane that is conjugate to the imaging plane is effective. The state of the adjustment screen is shown in FIG. 8. In the first embodiment, the spatial intensity distribution of the laser light that is reduced and imaged at the interface between the surface of the donor substrate and the light absorption layer is monitored in real time and with high resolution.

[0075] The above are the functions fulfilled by the device configuration in the first embodiment regarding the propagation of the pulsed laser light emitted from the laser device.

[0076] Next, in the device according to the present invention, a brief description will be given of how to mechanically achieve the parallelism between the Y-axis (Yr) of the receptor stage and the Y-axis (Yd) of the donor stage using the configuration of the first embodiment.

[0077] As shown in FIG. 1A, for each stage, the X-axis (Xd) of the donor stage is placed on the granite surface plate 1 (G1), and the optical stage (Xo) is placed thereon. The receptor stage group (Yr, θr, Zr) is placed on the granite surface plate 2 (G2). And the whole is constructed on the base surface plate (G). And the rotation adjustment mechanism (RP) is provided between G1 and Xd, between Xo and Xd, and between Xd and Yd (not shown).

[0078] In order to adjust the perpendicularity and parallelism of the axes of each stage, an adjustment substrate AD held on a donor stage instead of the donor substrate and an adjustment substrate AR placed on a receptor stage instead of the receptor substrate are used. On each adjustment substrate, lines indicating an X-axis (alignment line X) and a Y-axis (alignment line Y) that are exactly perpendicular to each other as alignment lines are drawn, and marks are also provided at predetermined positions (intervals).

[0079] 1) Parallelism between Yr and AR(Y) (perpendicularity between Yr and AR(X)) To adjust the parallelism between the Y-axis (Yr) of the receptor stage and the alignment line Y on the adjustment substrate AR, the adjustment substrate AR placed on the Z-axis (Zr) of the receptor stage is observed by a high-magnification CCD camera fixed to the optical stage (Xo) or the Z-axis stage for a projection lens installed thereon. The Yr axis is moved 400 [mm], and the θ-axis (θr) of the receptor stage is used to adjust so that the deviation amount in the X-axis direction of the alignment line Y is within 1 [μm]. Note that the moving distance of the stage at this time is within the effective stroke range of the stage, and the allowable deviation amount varies according to the required lift accuracy. (The same applies hereinafter.)

[0080] 2) Parallelism between AR(X) and Xd (perpendicularity between Yr and Xd) Next, using the alignment line X of the adjustment substrate AR adjusted as described above, while observing with the same high-magnification CCD camera fixed to the optical stage (Xo) or the Z-axis stage for a projection lens installed thereon, the perpendicularity between the X-axis (Xd) of the donor stage and the Y-axis (Yr) of the receptor stage is adjusted. The Xd axis is moved 400 [mm], and the attachment angle between the two is adjusted using the rotation adjustment mechanism between G1 and Xd described above so that the deviation amount in the Y-axis direction of the alignment line X is within 1 [μm], and the attachment angle of Xd with respect to G1, that is, Yr, is adjusted.

[0081] 3) Parallelism between AR(X) and Xo (perpendicularity between Yr and Xo, parallelism between Xd and Xo) Using the alignment line X of the adjusted adjustment substrate AR, the parallelism between the optical stage (Xo) and the X-axis (Xd) of the donor stage is adjusted while observing with a high-magnification CCD camera fixed to the optical stage (Xo) or the Z-axis stage for the projection lens installed thereon. Move the Xo axis by 200 [mm], and adjust the parallelism of the optical stage (Xo) with respect to the X-axis (Xd) of the donor stage by the rotation adjustment mechanism between them so that the deviation amount in the Y-axis direction of the alignment line X is within 0.5 [μm].

[0082] 4) Parallelism between Yd and AD(Y) To adjust the parallelism between the Y-axis (Yd) of the donor stage and the alignment line Y on the adjustment substrate AD, observe the adjustment substrate AD held on the θ-axis (θd) of the donor stage with a high-magnification CCD camera fixed to the optical stage (Xo) or the Z-axis stage for the projection lens installed thereon. Move the Yd axis by 200 [mm], and adjust using the θ-axis (θd) of the donor stage so that the deviation amount in the X-axis direction of the alignment line Y is within 0.5 [μm].

[0083] 5) Parallelism between AD(X) and Xo (Parallelism between AD(X) and Xd, Right angle between Xd and Yd) To adjust the right angle between the X-axis (Xd) and the Y-axis (Yd) of the donor stage, observe the alignment line X on the adjustment substrate AD with a high-magnification CCD camera fixed to the optical stage (Xo) or the Z-axis stage for the projection lens installed thereon, the parallelism of which with the X-axis (Xd) of the donor stage has already been adjusted. Move the optical stage (Xo) by 200 [mm], and adjust the right angle between the Y-axis (Yd) of the donor stage suspended from the X-axis (Xd) of the donor stage by the rotation adjustment mechanism between them so that the deviation amount in the Y-axis direction of the alignment line X is within 0.5 [μm].

[0084] 6) Parallelism between AD(Y) and Yr (Parallelism between Yd and Yr) Finally, to check the parallelism between the Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the receptor stage, a high-magnification CCD camera is attached to the Y-axis (Yd) of the donor stage, and the alignment line Y of the adjustment substrate AR placed on the opposing receptor stage is observed. At this time, the adjustment substrate AD is removed. Move the X-axis (Xd) of the donor stage so that this high-magnification CCD camera can observe any one end of the receptor stage. Next, move the Y-axis (Yd) of the donor stage by 400 [mm], and check whether the deviation amount in the X-axis direction of the alignment line Y is within 1 [μm]. Furthermore, to perform the same check for the other end of the receptor stage, after moving Xd to the other end, move Yd by 400 [mm] again, and confirm that the deviation amount in the X-axis direction of the alignment line Y is within 1 [μm]. In addition, it is also possible to translate Yd and Yr and observe the variation in the position of the alignment mark.

[0085] Note that when the high-magnification CCD camera is attached to the Y-axis (Yd) of the donor stage, depending on the position of the X-axis of the donor stage and the shape (opening) of the granite plate 1, there is a possibility of contact with these. In that case, instead of attaching the high-magnification CCD camera to Yd, attach it to the Z-axis (Zr) of the receptor stage, move the Y-axis (Yr) of the receptor stage by 200 [mm], observe the alignment line Y of the adjustment substrate AD, and it is also possible to check the deviation amount in its X-axis direction.

[0086] Since the granite plate 1 (G1) and the granite plate 2 support each stage independently, and Yd is suspended from the Xd installed on G1, although the parallelism between Yr and Yd cannot be directly adjusted, as described above, the parallelism between Yr and Yd is adjusted on the order of [μrad] step by step. Note that as the adjustment steps from 1) to 6) are followed in order, the error in parallelism (right angle) accumulates, so it is desirable to adjust the allowable deviation amount at the initial stage to be as small as possible. Also, although the adjustment steps from 1) to 6) describe the adjustment of the parallelism and right angle of each stage in the XY plane, adjustment around other axes (X-axis and Y-axis) is also necessary.

[0087] Next, the scanning of the donor substrate and the receptor substrate during lifting in the first embodiment will be described with reference to FIGS. 9A to 9C. Here, the Top View of FIGS. 9A to 9C is an image in which an operator is arranged on the left side of these figures, and the donor substrate (D) and the receptor substrate (R) scan back and forth with respect to the operator.

[0088] First, the amount of deflection of the donor substrate adsorbed and set on the θ-axis (θd) of the donor stage is measured over the entire surface of the donor substrate, and this is mapped as two-dimensional data together with the position information. This information is used as the correction amount of the Z-axis (Zr) of the receptor stage corresponding to the X-axis (Xd) and Y-axis (Yd) of the donor stage that moves during the lifting process.

[0089] Also, for convenience in the following description, a predetermined position in front of the left hand of the receptor substrate (R) and the donor substrate (D) as viewed from the operator is defined as the origin of each substrate. Then, when the origin of the receptor substrate is irradiated with laser light, the positions of the optical stage (Xo) and the receptor stage (Yr, θr) are defined as the origin, respectively. Also, in the donor substrate, the positions of the donor stage (Xd, Yd, θd) when the laser light (LS) is irradiated are defined as the respective origins. However, the origin of each stage is not limited to one end of its stroke range, but is a position that leaves a stroke for subsequent lifting and substrate removal.

[0090] Figure 9A shows the state in which the first pulse of the laser beam (LS) is irradiated onto the donor substrate (D) and the receptor substrate (R) located at the origin position. Here, both a side view and a top view are illustrated. The dashed line indicates the state in which the laser beam is irradiated onto the object (S) by the reduction projection optical system. The light absorption layer (not shown) in the irradiated 10×10 [μm] region absorbs the laser beam, is ablated, generates a shock wave, and thereby the object in the same region is lifted onto the receptor substrate facing it. Although three objects are shown in the figure, in the case of Example 1, a total of 300 objects are lifted onto the receptor substrate at once.

[0091] In Example 1, the laser device oscillates at 200 [Hz], and since the lift is performed in one shot, the receptor stage (Yr) scans the receptor substrate in the -Y direction at a speed of 6 [mm / s] without stopping until the next irradiation position.

[0092] On the other hand, the Y-axis (Yd) of the donor stage scans the donor substrate in the -Y direction at a speed of 3 [mm / s] without stopping while synchronizing the position with the Y-axis (Yr) of the receptor stage. That is, the moving speed ratio (gear ratio) of Yd to Yr is 1:2. Figure 9B shows the state of the second shot when each substrate moves.

[0093] The synchronization of the positions of Yr and Yd is achieved by using the gear command of the stage system to operate both stages in a gear mode synchronization with Yr as the reference (master) and Yd as the slave. A programmable multi-axis control device is used for the control system.

[0094] In addition, in order to determine the gear ratio in the gear command, the measured value of the stage position by the laser interferometer is used. A corner cube (Ic) that moves together with the moving table of Yr and constitutes a laser interferometer near the receptor substrate is attached, and a He-Ne laser (IL) with a wavelength of 632.8 [nm] and a light receiving part (not shown in FIG. 5A) are installed on the granite plate 2 (or an equivalent fixed position). Similarly, a corner cube is attached to the side surface of the moving table of Yd, and the laser for the interferometer and the light receiving part (not shown in FIG. 5B) are installed on Xd. By these means, accurate position synchronization of each stage is realized.

[0095] As described above, each stage starts accelerating from a position in front of the origin so that it already has a stable constant velocity motion at the position of the origin. During the acceleration time and the time until the stage reaches the origin, the laser pulse needs to be blocked so that the donor substrate is not irradiated with laser light. Therefore, the programmable multi-axis control device transmits an external oscillation trigger to the laser device or an operation start trigger for the high-speed shutter, and a stage drive signal with high precision.

[0096] Furthermore, the state of the third shot is shown in FIG. 9C. As can be seen from the figure, it can be seen that the moving distance of the receptor substrate is twice that of the donor substrate (D). After that, the movement of the receptor substrate and the donor substrate continues in the same manner.

[0097] When the donor substrate finishes scanning 180 [mm] in the -Y direction, and similarly, when the receptor substrate finishes scanning 360 [mm] in the -Y direction, the oscillation of the laser device is temporarily stopped, or the irradiation of the laser light is blocked by the high-speed shutter. By scanning this distance, 3 million objects arranged in 300 in the X-axis direction have been lifted 12,000 steps in the Y-axis direction of the receptor substrate, for a total of 3.6 million. The state is shown in FIG. 10.

[0098] Within the said stop time, both the Y-axis (Yr) of the receptor stage and the Y-axis (Yd) of the donor stage return to the origin. (However, it is assumed that the acceleration distance in the next scan is taken into account. The same applies hereinafter.) On the other hand, the X-axis (Xd) of the donor stage returns to a position -9 [mm] from the previous origin. Then, the lift process is started again from the new area. The following is repeated.

[0099] Figure 11 shows the state just before starting the same operation with a new origin after the step movement of Xd for -9 [mm] × 20 times has ended. This time, it returns from the previous origin (shown by the dotted line in the figure) to a position -15 [μm] in the -X direction (shown by the solid line in the figure), and starts the same operation with this point as the new origin. After this, the Y-axis scans of both stages (180 [mm] (Yd) and 360 [mm] (Yr)) and the step operation of Xd for -9 [mm] × 20 times are repeated. As a result, the laser beam can be irradiated onto the area that has not received the laser beam irradiation during the first 180 [mm] scan of Xd (20 step movements of -9 [mm]) (in the figure, the area where the next laser beam (LS) is scheduled to be irradiated is shown by the dashed-dotted line), and the object on the donor substrate can be lifted onto the receptor substrate without waste and more.

[0100] The approximate processing time is 360 [mm] / 6 [mm / s] × 40 [times] = 2400 [s]. Note that this time does not include the time for the Y-axis (Yr) of the receptor stage to move the distance required for its acceleration and deceleration and the time until it returns to the origin each time the Y-axis is scanned. Also, by increasing the repetition frequency of the excimer laser to 1 [kHz], this processing time can be shortened to 1 / 5.

[0101] Figure 12 shows the synchronous position error between the two stages when, according to the apparatus configuration of Example 1, a distance of 400 [mm] is translated synchronously at a moving speed of 150 [mm / s] with the Y-axis (Yr) of the receptor stage as the reference (master), and a distance of 200 [mm] is translated at a moving speed of 75 [mm / s] with the Y-axis (Yd) of the donor stage as the slave. Specifically, in Yr as the reference (master), the error amount (δYr) between the position information obtained from its linear encoder and the position information measured by the laser interferometer, and in Yd as the slave that moves synchronously at half of that speed, the difference (ΔYdr = δYd - δYr) between the error amount (δYd) of the position information obtained from its linear encoder and the position information measured by the laser interferometer is plotted with the horizontal axis being the elapsed time corresponding to the moving speed of the receptor stage. As can be seen from this result, a position synchronization accuracy within ±1 [μm] is achieved over a moving distance of 400 mm.

[0102] As described above, the lift pattern of the object onto the receptor substrate in Example 1 is a matrix lift with an interval of 30 [μm] at 10 × 10 [μm]. However, for example, if this interval is changed to 60 [μm], it becomes possible to lift enough objects for 4 receptor substrates with 1 donor substrate.

Example

[0103] In Example 2, unlike in Example 1 where the objects on the surface of the donor substrate were in a single-layer state, on a donor substrate of the same size of 200 × 200 [mm], a total of 144 million objects each with a shape of 10 × 10 [μm] and an interval of 15 [μm] formed in a matrix are lifted in a matrix at an interval of 30 [μm], which is half the density of the donor substrate, onto a receptor substrate of size 400 × 400 [mm].

[0104] Although the state of the arrangement of the object finally lifted onto the receptor substrate is the same as in Example 1, in this Example 2, the objects are similarly arranged on the donor substrate in advance at twice the density, and the difference lies in lifting this onto the receptor substrate with a positional accuracy of ±1 [μm]. And in this case, compared with Example 1, the positional synchronization accuracy between the Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the receptor stage is required to be even more stringent.

[0105] In FIGS. 13A to 13C, similar to Example 1, the states from the irradiation of the first pulse of the laser beam (LS) to the third shot are shown for the donor substrate (D) and the receptor substrate (R) at the origin position.

Example

[0106] In this Example 3, the method of lifting the object on the surface of the donor substrate onto the receptor substrate is the same as in Example 1 or 2. On the other hand, the method of adjusting the parallelism between the Y-axes of each stage and the parallelism between the X-axes, and the right angle between each Y-axis and X-axis is different from the above examples. That is, the adjustment method described in Example 1 performs the adjustment steps from 1) to 6) to adjust the parallelism between the Y-axis (Yr) of the receptor stage and the Y-axis (Yd) of the donor stage, whereas in this Example 3, the parallelism between Yr and Yd is performed at an earlier stage of the adjustment steps.

[0107] 1) Straightness of Yr, θr, Zr This adjustment step is an adjustment step as a premise common to the above Example 1 and Example 2. The straightness of the Y-axis (Yr) of the receptor stage installed on the granite surface plate 2 (G2), the θ-axis (θr) installed thereon, the Z-axis (Zr) as well, and the straightness of the holder of the receptor substrate (the straightness with respect to the Z-axis which is the vertical direction when the horizontal plane is the XY plane) are adjusted using a laser interferometer or the like. Basically, after this adjustment, no adjustment that may affect the right angle of the receptor stage group is performed, and all adjustments of other stages are performed based on, for example, the uppermost surface of this receptor stage group.

[0108] 2) Parallelism between Yr and AR(Y) (Perpendicularity between Yr and AR(X)) Similar to adjustment step 1) of Example 1, adjust the parallelism between the Y-axis (Yr) of the receptor stage and the alignment line Y on the adjustment substrate AR. As a result, the perpendicularity between Yr and the alignment line X is also adjusted. Note that if an alignment line or alignment mark directly drawn on Yr is used without using the adjustment substrate AR, this adjustment step 1) can be omitted.

[0109] 3) Parallelism between AR(X) and Xd (Perpendicularity between Yr and Xd) Next, observe the alignment line X of the adjustment substrate AR with a high-magnification CCD camera installed on the optical stage (Xo) placed on the X-axis (Xd) of the donor stage. The position of the high-magnification CCD camera in the Z-axis direction is determined by the design of the projection optical system. In this Example 3, it is fixed using the Z-axis stage (Zl) that holds the projection lens near the position of the projection lens (Pl). Move Xd by 400 [mm], and use a rotation adjustment mechanism to adjust the mounting angle of Xd with respect to the granite surface plate 1, that is, the perpendicularity between Yr and Xd, so that the deviation amount of the alignment line X in the Y-axis direction is within 0.3 [μm].[[]]

[0110] 4) Parallelism in the YZ plane between Yr and Yd In the description of Example 1, the description of the adjustment steps around other axes (X-axis and Y-axis) was omitted. Here, the adjustment step of the parallelism around the X-axis, that is, in the YZ plane, will be briefly described. Observe the lower surface of the Y-axis (Yd) of the donor stage using a height sensor installed on the Z-axis (Zr) of the receptor stage or other parts. Move Yr and Yd synchronously and at the same distance by 200 [mm] or more at the same time (parallel running), and observe the variation in the measured value by the gap sensor (the distance between Zr and Yd). Insert a shim plate between the rotation adjustment mechanism installed between Xd and Yd and Yd or Xd so that the variation is within 5 [μm] or within a range sufficiently smaller than the depth of focus of the imaging by the projection lens, and adjust the parallelism in the YZ plane between Yr and Yd.

[0111] 5) Parallelism between Yr and Yd Using a high-magnification CCD camera installed at Zr or other parts, observe the alignment marks for pattern matching provided on the lower surface of Yd. Synchronously move Yr and Yd by the same distance (running parallel), and when the position of the pattern-matched alignment mark image (such as a cross mark) moves in the X-axis direction, use the rotation adjustment mechanism installed between Xd and Yd to adjust it to correct this. Note that it is also possible to use the alignment line Y of the adjustment substrate AD attached to the Y-axis of the donor stage instead of the alignment marks.

[0112] 6) Orthogonality between Yr and Xo Observe the alignment line X of the adjustment substrate AR whose orthogonality with the Y-axis (Yr) of the receptor stage has been adjusted in the adjustment step 1) using a high-magnification CCD camera installed on the optical stage (Xo). Move Xo by 400 [mm], and use the rotation adjustment mechanism installed between the two to adjust the attachment angle of Xo with respect to Xd so that the deviation amount of the alignment line X in the Y-axis direction is within 0.3 [μm].

Example

[0113] Figure 2A shows the main components of the lift device of this Example 4. It is based on the seventh invention of the present invention as the basic configuration. In Figures 2A to 2C, the illustration of the laser device, control device, and other monitors (all of these are the same as in Example 1) is omitted, and the X-axis, Y-axis, and Z-axis directions are shown in the figure. Also, the donor substrate, receptor substrate used in this Example 4, as well as the arrangement on the donor substrate of the object to be lifted and the arrangement on the receptor substrate after lifting are the same as in Example 2.

[0114] The state of the optical system from when the pulsed laser light is emitted from the excimer laser device until it is irradiated onto the object to be lifted on the donor substrate is the same as in Example 1, except for the parts resulting from the differences in the construction of each stage group shown in FIGS. 1A and 2A, respectively. That is, in the case of the lift device according to the sixth invention shown in FIGS. 1A to 1C, the X-axis (Xd) of the donor stage is placed on the granite surface plate 1 (G1), and the optical stage (Xo) is placed thereon in that order, whereas in the case of the lift device according to the seventh invention shown in FIGS. 2A to 2C, the difference in the construction of these stage groups is that Xo is placed on G1 and Xd is suspended below G1.

[0115] The emitted light from the excimer laser is incident on the telescopic optical system and propagates to the shaping optical system ahead. As shown in FIG. 2A, this shaping optical system is installed on the optical stage (Xo) that moves in the X-axis direction so that its optical axis is parallel. And Xo is placed on the granite surface plate 1 (G1) made of granite, and there is a rotation adjustment mechanism (RP) between the two. Here, Xo is perpendicular to the Y-axis (Yr) of the receptor stage placed on a granite surface plate 2 (G2) different from G1 and is parallel to the X-axis (Xd) of the donor stage. Note that the laser light immediately before being incident on the shaping optical system is adjusted by the telescopic optical system so as to have generally the same shape (generally 25×25 [mm] (vertical × horizontal, FWHM)) regardless of the movement of Xo.

[0116] The X-axis (Xd) of the donor stage is suspended below G1, and further, the Y-axis (Yd) of the donor stage is suspended. Also, there is a rotation adjustment mechanism between each of them. In FIG. 2B, a side view shows the state where Xo and Xd have moved the same distance with respect to G1. Thereby, the position in the X-axis direction with respect to Yd can be changed without changing the relative position on the X-axis between Xo and Xd. Also, in FIG. 2C, a side view shows the state where only Xo has moved with respect to G1. Thereby, the relative position on the X-axis between Xd and Xo can be changed.

[0117] The details of the other reduction projection optical systems, namely the field lens (F), mask (M), and projection lens (Pl), are the same as those in Example 1. The laser light emitted from the projection lens enters from the back surface of the donor substrate and is accurately projected onto the lift target formed on its surface (lower surface) at a reduced size of 1 / 5 of the pattern drawn on the mask. Also, the imaging state on the surface of the donor substrate is measured using a confocal beam profiler in the same manner as in Example 1.

[0118] Based on the mask pattern reduced and projected as described above onto the lift target disposed on the surface of the donor substrate, when the lift target is lifted onto the receptor substrate facing it, how the donor substrate and the receptor substrate are scanned and how the lift target is lifted onto the receptor substrate are shown in FIGS. 6, 10, 11, and 13A to 13C. Further, the positional synchronization accuracy in the movement of the Y-axis (Yr) of the receptor stage and the Y-axis (Yd) of the donor stage is the same as that shown in FIG. 12 in Example 1.

[0119] Furthermore, the method for adjusting the parallelism between the Y-axes and the parallelism between the X-axes of each stage, and the perpendicularity between each Y-axis and X-axis are the same as those in Example 3. That is, taking the Y-axis (Yr) of the receptor stage adjusted for straightness as a reference, the perpendicularity between Yr and the X-axis (Xd) of the donor stage suspended from the granite surface plate 1 (G1) is observed by a high-magnification CCD camera fixed to the Z-axis (Zr) of the receptor stage, and adjusted by the rotation adjustment mechanism (RP) between G1 and Xd. Then, the parallelism between the Y-axis (Yd) of the donor stage suspended from the adjusted Xd and Yr is observed by the same high-magnification CCD camera, and adjusted by the RP between Xd and Yd. Finally, the perpendicularity between the optical stage (Xo) and Yr is observed by a high-magnification CCD that moves together with Xo, and adjusted by the RP between G1 and Xo.

Industrial Applicability

[0120] It can be used as a manufacturing apparatus for displays.

Explanation of Reference Numerals

[0121] Adjustment substrate for AD donor stage Adjustment substrate for AR receptor stage BP confocal beam profiler CCD high magnification camera D donor substrate F field lens G base platen G1 platen 1 G11 platen 11 G12 platen 12 G2 platen 2 G3 platen 3 H shaping optical system Ic corner cube for laser interferometer IL laser for laser interferometer LS laser beam M mask Pl projection lens R receptor substrate RP rotation adjustment mechanism S object TE telescope Xd X-axis of donor stage Xo optical stage (X-axis) Yd Y-axis of donor stage Yl switching stage between projection lens and camera Yr Y-axis of receptor stage Zl Z-axis stage of projection lens Zr Z-axis of receptor stage θd θ-axis of donor stage θr θ-axis of receptor stage

Claims

1. A lifting method in which a mask pattern of laser light is irradiated from the back surface of a substrate toward an object provided in a matrix on the surface of the substrate to peel the object from the substrate and lift the object in a matrix onto another substrate, wherein the mask pattern of the laser light irradiated onto the substrate and the substrate and the other substrate are relatively displaced with respect to each other, so that the interval in the displacement direction of the object lifted onto the other substrate is made larger than the interval between the objects on the substrate, and the interval in the direction perpendicular to the displacement direction of the object lifted onto the other substrate is made larger than the interval between the objects on the substrate by the interval between the windows in the mask for obtaining the mask pattern. Lifting method.

2. The lifting method according to claim 1, wherein the interval in the displacement direction of the object lifted onto the other substrate is 2 times or more the interval between the objects on the substrate.

3. The lifting method according to claim 1, wherein the interval in the displacement direction of the object lifted onto the other substrate is 2 to 4 times the interval between the objects on the substrate.

4. The lifting method according to any one of claims 1 to 3, wherein the interval in the direction perpendicular to the displacement direction of the object lifted onto the other substrate is 2 times or more the interval between the objects on the substrate.

5. The lifting method according to any one of claims 1 to 3, wherein the interval in the direction perpendicular to the displacement direction of the object lifted onto the other substrate is 2 to 4 times the interval between the objects on the substrate.

6. A lifting method in which laser light is irradiated from the back surface of a substrate toward an object provided in a matrix on the surface of the substrate to peel the object from the substrate and lift the object in a matrix onto another substrate, wherein the laser light irradiated onto the substrate and the substrate and the other substrate are relatively displaced with respect to each other in the row direction of the matrix, and lasers are irradiated onto a plurality of non-adjacent and spaced-apart objects in the column direction of the matrix, and the objects are lifted so that the density of the objects on the other substrate is reduced compared to the density of the objects on the substrate.

7. The lifting method according to claim 6, wherein the density in the row direction of the matrix of the object lifted onto the other substrate is 1 / 2 times or less the density of the objects on the substrate.

8. The density in the row direction of the matrix of the object lifted to the other substrate is 1 / 4 to 1 / 2 times the density of the object on the substrate, according to the lifting method of claim 6.

9. The density in the column direction of the matrix of the object lifted to the other substrate is 1 / 2 times or less the density of the object on the substrate, according to the lifting method of any one of claims 6 to 8.

10. The density in the column direction of the matrix of the object lifted to the other substrate is 1 / 4 to 1 / 2 times the density of the object on the substrate, according to the lifting method of any one of claims 6 to 8.

11. Moving the substrate and the other substrate in the same direction with respect to the mask pattern of the laser light irradiated on the substrate, according to the lifting method of any one of claims 1 to 10.

12. The substrate and the other substrate move at different speeds with respect to the mask pattern of the laser light irradiated on the substrate, according to the lifting method of claim 11.

13. The moving speed of the other substrate is faster than the moving speed of the substrate with respect to the mask pattern of the laser light irradiated on the substrate, according to the lifting method of claim 12.

14. Stopping the movement when irradiating the substrate with the laser light, according to the lifting method of any one of claims 11 to 13.

15. The movement is performed without stopping when irradiating the substrate with the laser light, according to the lifting method of any one of claims 11 to 13.

16. A method for manufacturing another substrate on which an object is lifted, lifting the object to another substrate by the lifting method of any one of claims 1 to 15.

17. A photomask used in a lifting method for irradiating a mask pattern of laser light from the back surface of a substrate toward an object provided in a matrix on the surface of the substrate, peeling the object from the substrate, and lifting the object in a matrix to another substrate, Having a window group in which a plurality of windows transmitting laser light are arranged in a row, The photomask in which the windows are spaced apart so that the mask pattern of the laser light is irradiated on a plurality of non-adjacent and spaced-apart objects on the substrate.

18. The photomask of claim 17, wherein the windows are spaced apart so that the distance between the objects lifted to the other substrate is 2 times or more the distance between the objects on the substrate.

19. The photomask according to claim 17, wherein the distance between the windows is 2 to 4 times the distance between the objects on the substrate such that the distance between the objects lifted to the other substrate is at least twice the distance between the objects on the substrate.

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