Optical semiconductor device, manufacturing method of them, back-light light source, and optical semiconductor package

Abstract

To provide an optical semiconductor device capable of improving uniformity of an optical output, a manufacturing method of them, a back-light source, and an optical semiconductor package.SOLUTION: An optical semiconductor device 1 is schematically configured, by having: a base 10; a light emitting element disposed on the base 10; a resin body 20 that is disposed above the light emitting element and transmits a light 182 output from the light emitting element; a diffusion member 22 that has a refractive index higher than that of the resin body 20 and is disposed inside the resin body 20 and diffuses the light 182; and an optical diffusion layer 24 that is a single layer in which the diffusion member 22 is disposed on either an uppermost part or a lowermost part of the resin body 20, and the diffusion member 22 further does not form an uneven surface on an uppermost part 200 of the resin body 20 or a surface of a lowermost part 201.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an optical semiconductor device, a method for manufacturing the same, a backlight light source, and an optical semiconductor package.

Background Art

[0002] As a conventional technique, a light-emitting device including a substrate, a light-emitting element mounted on the substrate, and a sealing member for sealing the light-emitting element is known (see, for example, Patent Document 1).

[0003] This sealing member contains particles of a filler that are unevenly distributed on the surface side of the sealing member. The surface of the sealing member for the light-emitting element has irregularities formed due to the particles of the filler. Due to these irregularities, the surface of the sealing member becomes a light-scattering surface that scatters external light, and the gloss is suppressed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In a conventional light-emitting device, since the surface of the sealing member has irregularities, the light emitted from the light-emitting element is scattered by the irregularities on the surface, resulting in a problem that the light output varies depending on the location and the uniformity of the light output decreases.

[0006] Therefore, an object of the present invention is to provide an optical semiconductor device, a method for manufacturing the same, a backlight light source, and an optical semiconductor package capable of improving the uniformity of the light output.

Means for Solving the Problems

[0007] One aspect of the present invention provides an opto-semiconductor device including a substrate, a light-emitting element disposed on the substrate, a resin body provided above the light-emitting element and transmitting light output from the light-emitting element, a diffusion member having a refractive index higher than that of the resin body and disposed inside the resin body to diffuse light, and a single layer in which the diffusion member is disposed either at the uppermost or lowermost part of the resin body, and further, a light diffusion layer in which the diffusion member does not form irregularities on the uppermost or lowermost surface of the resin body.

[0008] Another aspect of the present invention provides a method for manufacturing an opto-semiconductor device, in which a resin material and a diffusion member are injected into a mold, and the diffusion member is sedimented to the lowermost part of the resin material to form a resin body and a light diffusion layer.

[0009] Still another aspect of the present invention provides a backlight light source including a plurality of light-emitting elements arranged in a matrix and disposed on the back side of an illumination target, and a light diffusion layer disposed above the plurality of light-emitting elements.

[0010] Yet another aspect of the present invention provides an opto-semiconductor package including a housing containing a substrate, a light-emitting element, a resin body, and a light diffusion layer.

Advantages of the Invention

[0011] According to the present invention, the uniformity of light output can be improved.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2

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Figure 10

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Figure 12

[0013] [First embodiment] (Outline of optical semiconductor device 1) FIG. 1(a) is an example of a top view of an optical semiconductor device according to the first embodiment, and FIG. 1(b) is an example of a cross-sectional view of the optical semiconductor device cut along line A-A in FIG. 1(a) as viewed from the arrow direction. In each of the figures according to the embodiments described below, the ratios and shapes between the figures may be different from the actual ratios and shapes. Also, "A to B" indicating a numerical range is used to mean A or more and B or less.

[0014] As shown in FIGS. 1(a) and 1(b), the optical semiconductor device 1 of the present embodiment generally includes a substrate 10, a light-emitting element disposed on the substrate 10, a resin body 20 provided above the light-emitting element and transmitting the light 182 output from the light-emitting element, a diffusion member 22 having a refractive index higher than that of the resin body 20 and disposed inside the resin body 20 to diffuse the light 182, and a single-layer light diffusion layer 24 in which the diffusion member 22 is disposed either at the uppermost part or the lowermost part of the resin body 20, and further, the diffusion member 22 does not form irregularities on the surface of the uppermost part 200 or the lowermost part 201 of the resin body 20.

[0015] As an example, the light-emitting element of the present embodiment is a surface-mount type LED chip 18 using an LED (Light Emitting Diode).

[0016] Also, as shown in FIG. 1(b), in the optical semiconductor device 1 of the present embodiment, no light conversion layer or the like described later is interposed between the LED chip 18 and the resin body 20, and the resin body 20 serves as a sealing resin covering the LED chip 18. Therefore, the light diffusion layer 24 is provided on the uppermost part 200 of the resin body 20. And since the light diffusion layer 24 is provided on the uppermost part 200, no irregularities are formed on the surface of the uppermost part 200, that is, the upper surface 202. When the light diffusion layer 24 is disposed above the LED chip 18 with a light conversion layer or the like interposed therebetween, it is also possible to sink the diffusion member 22 and provide it on the lowermost part 201 of the resin body 20. At this time, the light diffusion layer 24 does not form irregularities on the surface of the lowermost part 201 of the resin body 20, that is, the lower surface 203.

[0017] As shown in Fig. 1(b), the optoelectronic semiconductor device 1 has an LED chip 18 electrically connected to electrodes 12a and 12b formed on the surface 100 of a substrate 10 via solder 14.

[0018] (Configuration of the substrate 10) The substrate 10 is, for example, a printed circuit board. As described above, electrodes 12a and 12b are provided on the surface 100 of this substrate 10. A solder resist 16 is provided on the electrodes 12a and 12b to protect and insulate a part of their surfaces 120a and 120b.

[0019] (Configuration of the electrodes 12a and 12b) The electrodes 12a and 12b are formed using a conductive metal such as copper (Cu) or aluminum (Al), for example. The electrodes 12a and 12b of the present embodiment are formed using copper, for example. Note that the electrodes 12a and 12b may be subjected to a plating process of a conductive metal such as gold (Au) on their surfaces.

[0020] One of the electrodes 12a and 12b is electrically connected to an anode exposed on the lower surface 181 of the LED chip 18, and the other is electrically connected to a cathode exposed on the lower surface 181. As the solder 14 interposed between the LED chip 18 and the electrodes 12a and 12b, for example, lead-containing solder or lead-free solder is used.

[0021] (Configuration of the LED chip 18) The light-emitting element of the present embodiment is, for example, an LED chip 18, but is not limited thereto, and may be an LD chip using an LD (Laser Diode) or the like. This LED chip 18 is a surface-emitting type light-emitting element and outputs light 182 from a light-emitting surface 180.

[0022] (Configuration of the resin body 20) The resin body 20 is composed of at least one of, for example, silicone resin, epoxy resin, urea resin, and polyimide resin. The resin body 20 of the present embodiment is formed using silicone resin as an example, but is not limited thereto, and may be formed from a plurality of resin materials.

[0023] As shown in FIGS. 1(a) and 1(b), the resin body 20 encapsulates the LED chip 18. Since the resin body 20 is formed using silicone resin, which is a transparent resin, the light 182 output from the LED chip 18 is transmitted therethrough. Note that, as an example, the resin body 20 preferably has a transmittance of 90% or more, but is not limited thereto.

[0024] (Configuration of the diffusion member 22) The diffusion member 22 is a spherical inorganic compound containing at least one of, for example, zirconia, zinc oxide, titanium oxide, alumina, and silicon oxide. The diffusion member 22 of the present embodiment is formed using zirconia beads made of zirconia as an example, but is not limited thereto, and may be formed from a plurality of types of materials.

[0025] Also, the specific gravity of the diffusion member 22 is made larger than that of the resin body 20. Since the resin body 20 of the present embodiment is silicone resin, its specific gravity is approximately 1. Also, since the diffusion member 22 of the present embodiment is zirconia, its specific gravity is approximately 6. That is, the diffusion member 22 has a specific gravity about six times that of the resin body 20. Therefore, when the diffusion member 22 is mixed with the resin material of the resin body 20, it settles due to the difference in specific gravity. The light diffusion layer 24 is formed by utilizing the difference in specific gravity.

[0026] Also, the diffusion member 22 has a spherical shape. The sphere diameter of the diffusion member 22 is, for example, 10 to 40 μm. The sphere diameter of the diffusion member 22 of the present embodiment is 30 μm as an example.

[0027] As shown in FIGS. 1(a) and 1(b), the diffusion member 22 is disposed on the uppermost portion 200 of the resin body 20 and forms a light diffusion layer 24. This uppermost portion 200 has a thickness, as an example, of 1.3 to 2 times, more preferably 1.5 to 1.8 times, the sphere diameter of the diffusion member 22 from the upper surface 202. Since the light diffusion layer 24 is formed by the sedimentation of the diffusion member 22, when forming the light diffusion layer 24 on the uppermost portion 200 of the resin body 20, it is done by inverting the top and bottom of the resin body 20 after sedimentation. Therefore, the lowermost portion 201 of the resin body 20 has a thickness of 1.3 to 2 times, more preferably 1.5 to 1.8 times, the sphere diameter of the diffusion member 22, similar to the uppermost portion 200.

[0028] Also, as shown in FIGS. 1(a) and 1(b), the light diffusion layer 24 is formed as a single layer. By a single layer, it means that the diffusion members 22 are arranged side by side so as not to overlap in two or more layers, that is, they are not distributed in a range larger than twice the sphere diameter of the diffusion member 22 in the thickness direction of the resin body 20. In FIG. 1(a), the diffusion members 22 are arranged two-dimensionally at equal intervals, but it is not limited to this, as long as it is uniform over the entire light emitting surface 180.

[0029] The light diffusion layer 24 causes an action similar to that of a microlens array by the diffusion member 22 forming a single layer, enhancing the uniformity of the light output and improving the light output.

[0030] The diffusion member 22 is provided on the uppermost portion 200 so as not to protrude from the upper surface 202. That is, the upper surface 202 of the resin body 20 is made so that no unevenness is formed due to the diffusion member 22. The upper surface 202 is as flat as the bottom surface 400 of the mold 4 described later.

[0031] FIGS. 2(a) to 3(b) are diagrams showing an example of a method for manufacturing an optical semiconductor device according to the first embodiment. Hereinafter, an example of a method for manufacturing the optical semiconductor device 1 will be described.

[0032] (Method for manufacturing the optical semiconductor device 1) The manufacturing method of the optical semiconductor device 1 includes injecting a resin material 205 and a diffusion member 22 into a mold 4, and depositing the diffusion member 22 at the lowermost part 206 of the resin material 205 injected into the mold 4 to form a light diffusion layer 24. Note that the diffusion member 22 may be arranged in a single layer on the bottom surface 400 of the mold 4 and then the resin material 205 may be injected. Further, the resin body 20 is formed by, for example, a compression molding method.

[0033] First, as shown in Fig. 2(a), a substrate 10 provided with electrodes 12a, 12b, a solder resist 16, and solder 14 is prepared.

[0034] Next, as shown in Fig. 2(b), an LED chip 18 is arranged on the solder 14 by a flip chip bonding method to form a backplane 3.

[0035] Next, as shown in Fig. 2(c), the resin material 205 and the diffusion member 22 are injected into the mold 4. At this time, the mold 4 is preheated at approximately 40°. The resin material 205 of the present embodiment is, for example, a molten silicone resin. The diffusion member 22 is mixed with a predetermined amount of the resin material 205 and injected into the cavity 40 of the mold 4. The predetermined amount of this diffusion member 22 is determined, for example, according to the following formulas (1) and (2) in order to make the light diffusion layer 24 a single layer. Calculation of the number of diffusion members 22 (N) N=(L X / d)×(L Y / d)···(1) L X : X-direction dimension (mm) of the cavity 40 of the mold 4 L Y : Y-direction dimension (mm) of the cavity 40 of the mold 4 d: Spherical diameter (mm) of the diffusion member 22 Calculation of the mass of the diffusion member 22 (W) W=N×V×G···(2) V=(4 / 3)×π×(d / 2)^3 G: Specific gravity of the diffusion member 22 In Fig. 1(a), for example, through the dimensions of the resin body 20 in the X direction and the Y direction, the X-direction dimension (L X) and the dimension in the Y direction (L Y ) are shown.

[0036] Next, as shown in Fig. 3(a), the diffusion member 22 is settled in the lowermost portion 206 of the resin material 205 injected into the mold 4 to form the light diffusion layer 24.

[0037] Next, as shown in Fig. 3(b), the backplane 3 is inserted into the insertion opening 41 of the mold 4 with the top and bottom reversed, the LED chip 18 is inserted into the resin material 205, and the resin material 205 is cured to form the resin body 20, obtaining the optical semiconductor device 1 shown in Fig. 1(b). Note that although the light diffusion layer 24 is formed in the lowermost portion 206 in Fig. 3(b), when the backplane 3 is removed from the mold 4, the lowermost portion 206 becomes the uppermost portion 200 of the resin body 20.

[0038] Subsequently, hereinafter, Example 1 in which optical simulation was performed will be described.

[0039] (Example 1) Fig. 4(a) is a diagram showing an example of the optical semiconductor devices according to Example 1 and Comparative Example 1, Fig. 4(b) is an example of a side view of the optical semiconductor device of Comparative Example 1, and Fig. 4(c) is an example of a side view of the optical semiconductor device according to Example 1. Fig. 5(a) is a table showing the parameters related to the optical semiconductor devices of Example 1 and Comparative Example 1, and Fig. 5(b) is a table showing the results of the optical simulation of Example 1 and Comparative Example 1. Fig. 6(a) is a graph (LES surface line plots X-center) showing the luminance of the light emitting surface along a straight line passing through the center of the elements of Example 1 and Comparative Example 1 and parallel to the X-axis, and Fig. 6(b) is a graph (LES surface line plots Y-center) showing the luminance of the light emitting surface on a straight line parallel to the Y-axis. Fig. 4(a) shows the optical semiconductor devices of Comparative Example 1 and Example 1 as viewed from above. Also, as an example, Fig. 4(a) shows straight lines l X and straight line l YIt is indicated by a dashed line. FIGS. 6(a) and 6(b) show that the dotted line represents the luminance of the optical semiconductor device 5a of Comparative Example 1, and the solid line represents the luminance of the optical semiconductor device 5b of Example 1. In FIG. 6(a), the horizontal axis represents the length in the X-axis direction (0 to 60 μm) of the light-emitting surface 530, and the vertical axis represents the luminance value (Luminance LV). In FIG. 6(b), the horizontal axis represents the length in the y-axis direction (0 to 20 μm) of the light-emitting surface 530, and the vertical axis represents the luminance value. As an example, as shown in FIG. 4(a), the XY coordinate axes have the intersection of two sides of the light-emitting surface 530 as the origin, with the left-to-right direction as the X-axis and the bottom-to-top direction as the Y-axis.

[0040] As shown in FIG. 4(b), the optical semiconductor device 5a of Comparative Example 1 includes a support substrate 50, an electrode 51, an electrode 52, a light-emitting element 53, a sapphire substrate 54, a resin body 55, and a reflector 56.

[0041] Also, as shown in FIG. 4(c), the optical semiconductor device 5b of Example 1 includes a support substrate 50, an electrode 51, an electrode 52, a light-emitting element 53, a sapphire substrate 54, a resin body 55, and a reflector 56. In addition, a diffusion member 57 is disposed at the lowermost portion 551 of the resin body 55, and a light diffusion layer 58 is formed. As a modification, the light diffusion layer 58 may be disposed at the uppermost portion 550.

[0042] In the optical semiconductor device 1 of Example 1, a light diffusion layer 58 is provided above the light-emitting element 53, that is, above the light-emitting element 53 via the sapphire substrate 54.

[0043] As shown in Fig. 5(a), the optical semiconductor device 5a of Comparative Example 1 and the optical semiconductor device 5b of Example 1 are subjected to optical simulation according to the following conditions. The support substrate 50 is a printed circuit board. As shown in Fig. 5(a), the electrodes 51 and 52 are plated with gold (Au) on the surface of the electrodes, and the reflectance ρ is 40%. The reflection by the electrodes 51 and 52 is simulated using a Gaussian function. The light-emitting element 53 is a blue LED element. The sapphire substrate 54 has a refractive index (RI) of 1.760. The resin body 55 uses silicone as a transparent encapsulating resin and has a refractive index of 1.409. The reflector 56 is made of white silicone, has a reflectance ρ of 98%, and simulates the reflection using a Lambertian model.

[0044] In the optical semiconductor device 5b of Example 1, a light diffusion layer 58 is formed. In the lowermost part 551 of this light diffusion layer 58, a diffusion member 57 made of zirconia beads (ZrO2 + Y2O3) is arranged in a single layer. As shown in Fig. 5(a), these zirconia beads have a spherical diameter of 30 μm and a refractive index (RI) of 2.13.

[0045] The results shown in the table of Fig. 5(b) were obtained in this optical simulation.

[0046] As shown in Fig. 5(b), Fig. 6(a), and Fig. 6(b), for the luminance of Comparative Example 1, the average on the X-axis is 6.97E+10, the minimum value is 6.42E+10, and the maximum value is 7.52E+10, and the average on the Y-axis is 7.10E+10, the minimum value is 6.82E+10, and the maximum value is 7.35E+10.

[0047] As shown in Fig. 5(b), Fig. 6(a), and Fig. 6(b), for the luminance of Example 1, the average on the X-axis is 7.80E+10, the minimum value is 7.49E+10, and the maximum value is 8.12E+10, and the average on the Y-axis is 7.88E+10, the minimum value is 7.69E+10, and the maximum value is 8.13E+10.

[0048] Also, for the light-emitting surface uniformity (LES Uniformity) of Comparative Example 1, the X-axis was 85.86% and the Y-axis was 92.71%. And the light intensity (Far field) of Comparative Example 1 was 898.5 (lm).

[0049] Furthermore, for the light-emitting surface uniformity of Example 1, the X-axis was 92.25% and the Y-axis was 94.52%. And the light intensity of Example 1 was 1029.0 (lm).

[0050] As shown in Fig. 6(a), for the optical semiconductor device 5b of Example 1, the luminance along the straight line l parallel to the X-axis passing through the element center 531 of the light-emitting surface 530 is overall higher than that of the optical semiconductor device 5a of Comparative Example 1. Similarly, as shown in Fig. 6(b), for the optical semiconductor device 5b of Example 1, the luminance along the straight line l parallel to the Y-axis passing through the element center 531 of the light-emitting surface 530 is overall higher than that of the optical semiconductor device 5a of Comparative Example 1. X As shown in Fig. 6(a), for the optical semiconductor device 5b of Example 1, the luminance along the straight line l parallel to the X-axis passing through the element center 531 of the light-emitting surface 530 is overall higher than that of the optical semiconductor device 5a of Comparative Example 1. Similarly, as shown in Fig. 6(b), for the optical semiconductor device 5b of Example 1, the luminance along the straight line l parallel to the Y-axis passing through the element center 531 of the light-emitting surface 530 is overall higher than that of the optical semiconductor device 5a of Comparative Example 1. Y is overall higher than that of the optical semiconductor device 5a of Comparative Example 1.

[0051] Through this optical simulation, for the optical semiconductor device 5b of Example 1, compared with the optical semiconductor device 5a of Comparative Example 1, the effects of improvement in the light-emitting surface uniformity are +8.07% on the X-axis and +1.95% on the Y-axis, and the light intensity is improved by +14.52% (Effects).

[0052] Subsequently, Example 2 regarding the trial-produced sample will be described below.

[0053] (Example 2) FIG. 7(a) is an SEM (Scanning Electron Microscope) photograph of the diffusion member of the first sample according to Example 2. FIG. 7(b) is a top view of the first sample before forming the encapsulating resin. FIG. 7(c) is a top view of the first sample after forming the encapsulating resin having a light diffusion layer. FIG. 8(a) is an SEM photograph of the diffusion member of the second sample according to Example 2. FIG. 8(b) is a top view of the second sample before forming the encapsulating resin. FIG. 8(c) is a top view of the second sample after forming the encapsulating resin having a light diffusion layer. FIG. 9(a) is a graph of the orientation characteristics in the X-axis direction of the first and second samples according to Example 2. FIG. 9(b) is a graph of the orientation characteristics in the Y-axis direction. In FIGS. 9(a) and 9(b), the vertical axis represents relative luminous intensity. In FIG. 9(a), the horizontal axis represents the angle in the X-axis direction from -90° to +90° centered on the element center. In FIG. 9(b), the horizontal axis represents the angle in the Y-axis direction from -90° to +90°. In FIGS. 9(a) and 9(b), the gray dotted line represents the first sample 6a, the gray solid line represents the first sample 6b, the black dotted line represents the second sample 6c, and the black solid line represents the second sample 6d.

[0054] The first sample 6a and the second sample 6c show samples in which the encapsulating resin (corresponding to the resin body 20) is not formed. The first sample 6b and the second sample 6d show samples in which the encapsulating resin is formed on the first sample 6a and the second sample 6c. Note that the manufacturing methods of the zirconia beads, which are the diffusion members 22, are different between the first sample 6b and the second sample 6d.

[0055] For the first sample 6b and the second sample 6d, after a blue LED element (corresponding to the LED chip 18) with a size of 1 mm × 1 mm is flip-chip mounted by Au-Sn eutectic bonding on an aluminum nitride ceramic substrate, a resin obtained by mixing a methyl-based transparent silicone resin and spherical zirconia beads (corresponding to the diffusion member 22) with a sphere diameter of 30 μm in a predetermined amount and degassing under vacuum is dropped, and a single-layer light diffusion layer 24 is formed on the surface of the LED element.

[0056] When laying a single layer of zirconia beads on the bottom surface 400 of the mold 4 with a size of 50 mm × 50 mm, the weight can be obtained as 0.23 (g) from the above formulas (1) and (2). The size of the zirconia beads is such that the sphere diameter is 0.03 mm. The number N of zirconia beads required to cover the bottom surface (50 × 50 mm^2) of the mold 4 is 2.78E+06. Vol / bead (zirconia beads) is 1.41E-08 (cm^3). Vol is 0.039 (cm^3). The specific gravity (s.g) is 5.8 (g / cm^3).

[0057] At this time, the silicone resin has a net volume (NET Vol) of 0.711 (cm^2), a specific gravity (s.g) of 5.34 (g / cm^3), and a weight (Weight) of 3.795 (g). Therefore, the weight ratio (Weight Ratio) of the zirconia beads to the encapsulating resin is 6.0%.

[0058] The zirconia beads of the first sample 6b are formed by the thermal plasma melting method. Also, the zirconia beads of the second sample 6d are formed by the pulverization and polishing method.

[0059] As shown in FIGS. 9(a) and 9(b), for the first sample 6a and the second sample 6c before forming the encapsulating resin, the luminous intensity of the LED element drops near the center of the element in both cases.

[0060] On the other hand, for the first sample 6a and the second sample 6c after forming the encapsulating resin, due to the formation of the light diffusion layer 24, the light output of the LED element is convex with the center of the element as the vertex and is like a quadratic curve with little variation and high stability.

[0061] As described above, the first sample 6b and the second sample 6d are heavier in specific gravity and higher in refractive index than the silicone resin which is a sealing resin. They are mixed with the sealing resin using zirconia beads and applied onto the LED element, and are sedimented to the lowermost part of the sealing resin to form the light diffusion layer 24, whereby the following results were obtained. · Improvement in luminous uniformity The luminous uniformity was improved by about 8 - 10% compared to the case where the light diffusion layer 24 was not formed. · Improvement in luminous intensity The luminous intensity was improved by about 15 - 20% compared to the case where the light diffusion layer 24 was not formed.

[0062] (Effect of the first embodiment) The optical semiconductor device 1 of this embodiment can improve the uniformity of the light output. Specifically, in the optical semiconductor device 1, the diffusion member 22 made of zirconia beads is arranged in a single layer on the uppermost part 200 of the resin body 20 which is a transparent sealing resin. Therefore, compared to the case where this configuration is not adopted, an action like a microlens array is caused by the light diffusion layer 24, and the uniformity of the light output can be improved and the light output can also be improved. Accordingly, the optical semiconductor device 1 has high light extraction efficiency such as the uniformity of the light output and the light output.

[0063] [Second embodiment] The second embodiment is different from other embodiments in that it is a backlight light source using an optical semiconductor device.

[0064] FIG. 10 is a cross-sectional view showing an example of the backlight light source according to the second embodiment. In the embodiments described below, parts having the same functions and configurations as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and the description thereof is omitted.

[0065] As shown in FIG. 10, the backlight light source 7 is roughly configured to include LED chips 18 as a plurality of light-emitting elements arranged in a matrix and disposed on the back side of the object to be illuminated, a resin body 20 that seals the plurality of LED chips 18, and a light diffusion layer 24 disposed on the uppermost portion 200 of the resin body 20. The object to be illuminated in the present embodiment is the display panel 73. This display panel 73 is, for example, a liquid crystal display (LCD panel).

[0066] Furthermore, the backlight light source 7 includes a light conversion layer 70, an adhesive layer 71, and a brightness enhancement film (BEF) 72. The backlight light source 7 in the present embodiment illuminates the display panel 73 using the light 182 output from the optical semiconductor device 1.

[0067] The light conversion layer 70 is a layer containing a phosphor that converts the light 182 output from the LED chip 18 into visible light. The adhesive layer 71 is a layer formed from an adhesive or a pressure-sensitive adhesive for attaching the brightness enhancement film 72 to the light conversion layer 70. The brightness enhancement film 72 is a film that controls the luminous intensity and polarization of the emitted light.

[0068] The backlight light source 7 converts the light 182 output from the plurality of LED chips 18 into visible light by the light conversion layer 70 and illuminates the display panel 73 from the back surface 730.

[0069] (Effect of the Second Embodiment) Since the backlight light source 7 in the present embodiment includes the light diffusion layer 24 of the optical semiconductor device 1 having high light output uniformity, the light output uniformity on the surface 731 of the display panel 73 is also high as compared with the case where this configuration is not adopted. Therefore, the backlight light source 7 can illuminate the display panel 73 so that the brightness is uniform, and further has a high light output, and can illuminate the display panel 73 brightly and without unevenness.

[0070] [Third Embodiment] The third embodiment is different from the other embodiments in that it is a direct - type backlight using an optical semiconductor device.

[0071] FIG. 11 is a cross - sectional view showing an example of a direct - type backlight using an optical semiconductor device according to the third embodiment.

[0072] As shown in FIG. 11, the direct - type backlight 8 is schematically configured to include an optical semiconductor device 1, a reflector 80, and a light conversion layer 81.

[0073] The reflector 80 is disposed so as to surround the side surface of the resin body 20. This reflector 80 reflects the light 182 output from the LED chip 18 to improve the light output. The light conversion layer 81 converts the light 182 output from the LED chip 18 into visible light.

[0074] (Effect of the third embodiment) The direct - type backlight 8 of the present embodiment is disposed directly below the illumination target. Therefore, in the direct - type backlight 8, the light output improved by the reflector 80 is made uniform by the light diffusion layer 24. Thus, compared with the case where this configuration is not adopted, the light output uniformity is improved, and the illumination target can be illuminated with an improved light output.

[0075] [Fourth embodiment] The fourth embodiment is different from the other embodiments in that an optical semiconductor package is configured using an optical semiconductor device.

[0076] FIG. 12 is a cross - sectional view showing an example of an optical semiconductor package according to the fourth embodiment.

[0077] As shown in FIG. 12, the optical semiconductor package 9 of the present embodiment is schematically configured to include a base 10, an LED chip 18 as a light - emitting element, a resin body 20, and a housing 90 that encloses the light diffusion layer 24.

[0078] This optical semiconductor package 9 further has a light conversion layer 91 that covers the LED chip 18.

[0079] The housing 90 has an internal space 900. This internal space 900 has, as an example, a conical shape with a circular bottom surface 901 on the vertex side. The substrate 10 is disposed on this bottom surface 901. The light conversion layer 91 is disposed in the internal space 900.

[0080] The housing 90 has a cylindrical portion 92 at the upper part of the internal space 900. The resin body 20 is disposed in this cylindrical portion 92. This resin body 20 has a light diffusion layer 24 formed by sedimentation of the diffusion member 22 at the lowermost portion 201.

[0081] As a modification, the optical semiconductor package 9 may be configured such that the resin body 20 is inverted up and down so that the light diffusion layer 24 is located at the uppermost portion 200.

[0082] The manufacturing method of this optical semiconductor package 9 includes disposing the substrate 10 with the LED chip 18 attached thereto on the bottom surface 901 of the housing 90, forming a light conversion layer 91 in the internal space 900 of the housing 90, mixing and injecting a resin material and the diffusion member 22 on the formed light conversion layer 91, and sedimenting the diffusion member 22 to form a light diffusion layer 24 at the lowermost portion 201.

[0083] (Effect of the Fourth Embodiment) In the optical semiconductor package 9 of the present embodiment, the visible light output from the LED chip 18 and converted by the light conversion layer 91 is efficiently guided to the light diffusion layer 24 by the housing 90. Therefore, compared with the case where this configuration is not adopted, the light output is made uniform by the light diffusion layer 24 and the light output is improved.

[0084] The above describes several embodiments and modifications of the present invention. However, these embodiments and modifications are merely examples and do not limit the invention according to the claims. These novel embodiments and modifications can be implemented in various other forms, and various omissions, replacements, changes, etc. can be made without departing from the gist of the present invention. Also, not all combinations of the features described in these embodiments and modifications are essential means for solving the problems of the invention. Furthermore, these embodiments and modifications are included in the scope and gist of the invention and are included in the invention described in the claims and its equivalent scope.

Explanation of Reference Numerals

[0085] 1, 5a, 5b... optical semiconductor device; 3... backplane; 4... mold; 6a, 6b... first sample; 6c, 6d... second sample; 7... backlight light source; 8... direct-lit backlight; 9... optical semiconductor package; 10... substrate; 12a, 12b... electrode; 14... solder; 16... solder resist; 18... LED chip; 20... resin body; 22... diffusion member; 24... light diffusion layer; 40... cavity; 41... insertion opening; 50... support substrate; 51, 52... electrode; 53... light-emitting element; 54... sapphire substrate; 55... resin body; 56... reflector; 57... diffusion member; 58... light diffusion layer; 70... light conversion layer; 71... adhesive layer; 72... brightness enhancement film; 73... display panel; 80... reflector; 81... light conversion layer; 90... housing; 91... light conversion layer; 92... cylindrical portion; 100... surface; 120a, 120b... surface; 180... light-emitting surface; 181... bottom surface; 182... light; 200... uppermost part; 201... lowermost part; 202... upper surface; 203... bottom surface; 205... resin material; 206... lowermost part; 400... bottom surface; 530... light-emitting surface; 531... element center; 550... uppermost part; 551... lowermost part; 730... back surface; 731... surface; 900... internal space; 901... bottom surface

Claims

1. A substrate, a light-emitting element disposed on the substrate, a resin body provided above the light-emitting element and transmitting light output from the light-emitting element, a diffusion member having a refractive index higher than that of the resin body and disposed inside the resin body to diffuse the light, a single layer in which the diffusion member is disposed either at the uppermost part or the lowermost part of the resin body, and further a light diffusion layer in which the diffusion member does not form irregularities on the uppermost surface or the lowermost surface of the resin body, A semiconductor optical device comprising the same.

2. The specific gravity of the diffusion member is greater than that of the resin body, The semiconductor optical device according to Claim 1.

3. The resin body seals the light-emitting element, The semiconductor optical device according to Claim 2.

4. The diffusion member is a spherical inorganic compound containing at least one of zirconia, zinc oxide, titanium oxide, alumina, and silicon oxide, The semiconductor optical device according to Claim 3.

5. The resin body is made of at least one of a silicone resin, an epoxy resin, a urea resin, and a polyimide resin, The semiconductor optical device according to Claim 4.

6. Inject a resin material and the diffusion member into a mold, Deposit the diffusion member at the lowermost part of the resin material injected into the mold to form the light diffusion layer, A method for manufacturing a semiconductor optical device according to any one of Claims 1 to 5.

7. A semiconductor optical device according to any one of Claims 1 to 5, a plurality of the light-emitting elements arranged in a matrix and disposed on the back side of an illumination target, a sealing body that seals the plurality of light-emitting elements, the light diffusion layer disposed at the uppermost part of the sealing body, A backlight light source comprising the same.

8. A semiconductor optical device according to any one of Claims 1 to 5, A semiconductor optical package comprising a housing that encloses the substrate, the light-emitting element, the resin body, and the light diffusion layer.

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