Display device

The semiconductor device addresses the challenge of high aperture ratio and charge capacity by using a light-transmitting capacitor structure with doped metal oxide electrodes and nitride insulating films, achieving reduced power consumption and improved display efficiency.

JP2025114743AActive Publication Date: 2025-08-05SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2025078464
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2013-03-15
Filing Date
2025-05-09
Publication Date
2025-08-05
Estimated Expiration
2033-09-12

AI Technical Summary

Technical Problem

Existing display devices face challenges in achieving a high aperture ratio while maintaining increased charge capacity and reduced power consumption due to the use of light-shielding conductive films in capacitance elements, which can lead to reduced liquid crystal molecule alignment stability and increased power consumption.

Method used

A semiconductor device with a capacitor element comprising a light-transmitting semiconductor film, a dielectric film, and a light-transmitting conductive film as electrodes, where the second conductive film is a metal oxide film doped with dopants to enhance conductivity, and a nitride insulating film is used to increase charge capacity without reducing the aperture ratio.

Benefits of technology

The solution results in a semiconductor device with enhanced charge capacity and reduced power consumption, maintaining a high aperture ratio and improving display quality by efficiently utilizing light transmission.

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Abstract

To provide a semiconductor device having a capacitor element having a high opening ratio and capable of increasing a charge capacity, and provide a semiconductor device capable of reducing consumption power.SOLUTION: A display device has: a transistor including a semiconductor film with a light-transmitting property; a capacitor element having a dielectric film provided between a pair of electrodes; an insulating film provided on the semiconductor film with a light-transmitting property; and a first light-transmitting conductive film provided on the insulating film. The capacitor element has: the first light-transmitting conductive film functioning as one electrode; the insulating film functioning as a dielectric; and a second light-transmitting conductive film facing the first light-transmitting conductive film through the insulating film and functioning as the other electrode. The second light-transmitting conductive film is a metal oxide film including a dopant that is formed on the same surface as the semiconductor film with a light-transmitting property of the transistor.SELECTED DRAWING: Figure 15
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Citation Information

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