Photoelectric conversion element
The photoelectric conversion element with a stacked semiconductor structure and optical waveguide design addresses saturation issues in germanium photodiodes, achieving high output and efficient light absorption.
JP2025117331APending Publication Date: 2025-08-12NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY +1
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Patent Information
- Application Number
- JP2024012111
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-01-30
- Publication Date
- 2025-08-12
AI Technical Summary
Technical Problem
Existing germanium photodiodes in silicon photonics circuits face challenges in achieving high output due to saturation issues, and previous methods require multiple photodiodes or specialized techniques that lack versatility.
Method used
A photoelectric conversion element with a first stacked body comprising a first impurity semiconductor, a second impurity semiconductor of a different conductivity type, and a first intrinsic semiconductor, where the intrinsic semiconductor has a longer side, connected to a first optical waveguide, allowing for wide light absorption and reduced saturation.
Benefits of technology
The photoelectric conversion element achieves high output with reduced susceptibility to saturation, enabling efficient light-to-electrical energy conversion.
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Smart Images
Figure 2025117331000001_ABST
Abstract
To provide a photoelectric conversion element of high output.SOLUTION: A photoelectric conversion element comprises a first laminate and a first optical waveguide. The first laminate includes a first extrinsic semiconductor which is disposed in an upper part in a lamination direction, a second extrinsic semiconductor of which the conductivity type is different from that of the first extrinsic semiconductor and which is disposed in a lower part in the lamination direction, and a first intrinsic semiconductor which is held between the first extrinsic semiconductor and the second extrinsic semiconductor in the lamination direction. A length of a first side of the first intrinsic semiconductor in the first laminate is longer than a length of a second side, which crosses the first side, in a view in the lamination direction. The first optical waveguide is connected to a first side face, to which the first side belongs, of the first laminate.SELECTED DRAWING: Figure 1
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