Light source and light-emitting device

Abstract

To provide a light source and a light-emitting device capable of improving heat dissipation.SOLUTION: A light-emitting device includes: a semiconductor laminate; a light-emitting element including a first electrode disposed on a first element surface of the semiconductor laminate and a second electrode disposed on the first element surface so as to be separated from the first electrode; and a heat dissipation member extending from the first element surface to an inter-wiring region in the inter-wiring region between a first wiring portion and a second wiring portion of a wiring substrate and between the first electrode and the second electrode. The bonding member is disposed between an upper surface of the first wiring portion and the first electrode, bonds the first wiring portion and the first electrode, being disposed between the upper surface of the second wiring portion and the second electrode, bonds the second wiring portion and the second electrode, being disposed between a side surface of the first wiring portion and the heat dissipation member, bonds the first wiring portion and the heat dissipation member, being disposed between the side surface of the second wiring portion and the heat dissipation member, and bonds the second wiring portion and the heat dissipation member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light source and a light emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses a light emitting element in which a resin partition plate is arranged between electrodes. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-286134 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a light source and a light emitting device that can improve heat dissipation. [Means for solving the problem]

[0005] According to one aspect of the present invention, a light source includes a wiring board, a light emitting device arranged on the wiring board, and a bonding member arranged between the wiring board and the light emitting device. The wiring board includes a base having a first surface and a second surface opposite to the first surface, a first wiring portion arranged on the first surface, and a second wiring portion arranged on the first surface and spaced apart from the first wiring portion. The light emitting device includes a semiconductor laminate having a first element surface facing the first surface and a second element surface opposite to the first element surface, a first electrode arranged on the first element surface, and a second electrode arranged on the first element surface and spaced apart from the first electrode. The optical element has an optical element, and a heat dissipation member extending from the first element surface to the inter-wiring region between the first wiring portion and the second wiring portion, and between the first electrode and the second electrode, wherein the bonding member is arranged between an upper surface of the first wiring portion and the first electrode to bond the first wiring portion to the first electrode, between an upper surface of the second wiring portion and the second electrode to bond the second wiring portion to the second electrode, between a side surface of the first wiring portion and the heat dissipation member to bond the first wiring portion to the heat dissipation member, and between a side surface of the second wiring portion and the heat dissipation member to bond the second wiring portion to the heat dissipation member.

[0006] According to one aspect of the present invention, a light-emitting device comprises a semiconductor laminate having a first element surface and a second element surface located opposite the first element surface, a light-emitting element comprising a first electrode arranged on the first element surface and a second electrode arranged on the first element surface, and a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode, wherein the first electrode and the second electrode are arranged apart from each other in a first direction, and the heat dissipation member comprises an insulating member having a first side surface and a second side surface located opposite each other in the first direction, and a metal member arranged on the first side surface and the second side surface.

[0007] According to one aspect of the present invention, a light-emitting device comprises a semiconductor laminate having a first element surface and a second element surface located opposite the first element surface, a light-emitting element having a first electrode arranged on the first element surface and a second electrode arranged on the first element surface, and a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode, wherein the first electrode and the second electrode are arranged apart from each other in a first direction, and the heat dissipation member has an insulating member having a first side surface and a second side surface located opposite each other in the first direction, and a portion of the first electrode is arranged on the first side surface and a portion of the second electrode is arranged on the second side surface. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a light source and a light emitting device that can improve heat dissipation. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic perspective view of a light source according to a first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view of the light source according to the first embodiment. [Figure 3] FIG. 4 is a schematic cross-sectional view of a modified example of the light source according to the first embodiment. [Figure 4] FIG. 10 is a schematic cross-sectional view of a light source according to a second embodiment. [Figure 5] FIG. 10 is a schematic cross-sectional view of a light source according to a third embodiment. [Figure 6] FIG. 10 is a schematic perspective view of a light emitting device according to a third embodiment. [Figure 7] FIG. 10 is a schematic cross-sectional view of a light source according to a fourth embodiment. [Figure 8] FIG. 10 is a schematic perspective view of a light emitting device according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiments shown below are examples for embodying the technical concept of the present invention and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of components described in the embodiments are not intended to limit the scope of the present disclosure, but are merely illustrative examples. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed description will be omitted as appropriate. Furthermore, as cross-sectional views, end views showing only the cut surface may be used.

[0011] In the following description, terms indicating specific directions or positions (e.g., "above," "below," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relative direction or position relationship indicated by terms such as "above" and "below" in the referenced drawings is the same, the arrangement in drawings other than those disclosed herein, actual products, etc., does not need to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "above (or below)" includes, for example, when two components are assumed to exist, a case in which the two components are in contact with each other, and a case in which the two components are not in contact with each other and one component is located above (or below) the other component. Furthermore, in this specification, unless otherwise specified, a component covering an object to be covered includes a case in which the component is in contact with the object to be covered and directly covers the object to be covered, and a case in which the component is not in contact with the object to be covered and indirectly covers the object to be covered.

[0012] In the figures shown below, the direction along the X axis is referred to as the first direction X, which indicates a predetermined direction in a plane parallel to the light-emitting surface of the light source and light-emitting device according to the embodiment. The direction along the Y axis is referred to as the second direction Y, which is perpendicular to the first direction X in a plane parallel to the light-emitting surface. The direction along the Z axis is referred to as the third direction Z, which is perpendicular to the light-emitting surface.

[0013] [First embodiment] A light source 1 according to the first embodiment will be described with reference to Figures 1 and 2. The light source 1 includes a wiring substrate 10, a light emitting device 50A disposed on the wiring substrate 10, and a bonding member 60 disposed between the wiring substrate 10 and the light emitting device 50A.

[0014] <Wiring board> The wiring board 10 includes a base material 13 , a first wiring portion 11 , and a second wiring portion 12 .

[0015] The substrate 13 has a first surface 13A and a second surface 13B located on the opposite side of the first surface 13A in the third direction Z. The substrate 13 is, for example, an insulating substrate. The insulating substrate may be made of, for example, a resin or a ceramic. The ceramic of the insulating substrate may be, for example, aluminum nitride, silicon nitride, aluminum oxide, or silicon oxide. Alternatively, the substrate 13 may have a metal substrate and an insulating film disposed on at least the upper surface of the metal substrate and including the first surface 13A. When a ceramic or metal substrate is used as the substrate 13, heat dissipation can be improved compared to when a resin is used.

[0016] The first wiring portion 11 is disposed on a first surface 13A of the substrate 13. The second wiring portion 12 is disposed on the first surface 13A and spaced apart from the first wiring portion 11 in the first direction X. The first wiring portion 11 and the second wiring portion 12 may be formed from a material such as copper, gold, platinum, silver, aluminum, nickel, or titanium.

[0017] The wiring board 10 has an inter-wiring portion region 15 between the first wiring portion 11 and the second wiring portion 12 on the first surface 13A side. The inter-wiring portion region 15 extends in the second direction Y as shown in FIG. 1. The minimum width of the inter-wiring portion region 15 in the first direction X is, for example, 30 μm or more. An insulating film (solder resist) that makes it difficult for the bonding member 60 to wet and spread may be arranged on the first surface 13A in the inter-wiring portion region 15.

[0018] Wiring board 10 may have a double-sided wiring structure including a wiring portion arranged on second surface 13B of substrate 13, or a multilayer wiring structure including a wiring portion arranged within substrate 13. The wiring portion arranged on second surface 13B and the wiring portion arranged within substrate 13 can be electrically connected to first wiring portion 11 and second wiring portion 12 arranged on first surface 13A through conductive vias.

[0019] <Light-emitting device> The light emitting device 50A includes a light emitting element 20 and a heat dissipation member 41.

[0020] (light-emitting element) The light emitting element 20 includes a semiconductor laminate 23 , a first electrode 21 , and a second electrode 22 .

[0021] The semiconductor laminate 23 has a first element surface 23A facing the first surface 13A of the base material 13 in the third direction Z, and a second element surface 23B located on the opposite side of the first element surface 23A in the third direction Z.

[0022] The semiconductor stack 23 includes a nitride semiconductor. In this specification, the nitride semiconductor is, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula represented by N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. Furthermore, nitride semiconductors also include those in the above chemical formula that further contain a Group V element other than N (nitrogen), and those that further contain various elements added to control various physical properties such as the conductivity type of the semiconductor. The semiconductor stack 23 includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer. The active layer is a light-emitting layer that emits light, and has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The light emitted by the active layer is, for example, visible light or ultraviolet light.

[0023] The first electrode 21 is disposed on the first element surface 23A. The second electrode 22 is disposed on the first element surface 23A and spaced apart from the first electrode 21 in the first direction X. The first electrode 21 is a cathode electrode in the light-emitting element 20, and is electrically connected to the n-side semiconductor layer in the semiconductor laminate 23. The second electrode 22 is an anode electrode in the light-emitting element 20, and is electrically connected to the p-side semiconductor layer in the semiconductor laminate 23. Examples of materials that can be used for the first electrode 21 and the second electrode 22 include gold, platinum, silver, aluminum, nickel, and titanium.

[0024] (heat dissipation material) The heat dissipation member 41 extends in the third direction Z from the first element surface 23A to the inter-wiring portion region 15 between the first electrode 21 and the second electrode 22 and between the first wiring portion 11 and the second wiring portion 12. The heat dissipation member 41 extends in the second direction Y between the first electrode 21 and the second electrode 22 and in the inter-wiring portion region 15.

[0025] The maximum width of the heat dissipation member 41 in the first direction X is smaller than the minimum width of the inter-wiring portion region 15 in the first direction X. This allows the bonding member 60 to be disposed between the side surface of the heat dissipation member 41 and the side surface of the first wiring portion 11, and between the side surface of the heat dissipation member 41 and the side surface of the second wiring portion 12.

[0026] The heat dissipation member 41 has an upper surface 41C bonded to the first element surface 23A and a lower surface 41D facing the first surface 13A of the substrate 13 in the inter-wiring region 15. The upper surface 41C of the heat dissipation member 41 is bonded to the first element surface 23A with an insulating adhesive member. For example, a resin member can be used as the insulating adhesive member. Alternatively, the upper surface 41C of the heat dissipation member 41 is directly bonded to the first element surface 23A.

[0027] The heat dissipation member 41 also has a first side surface 41A and a second side surface 41B located on opposite sides in the first direction X. A portion of the first side surface 41A faces a side surface of the first wiring portion 11 in the inter-wiring portion region 15. A portion of the second side surface 41B faces a side surface of the second wiring portion 12 in the inter-wiring portion region 15.

[0028] The heat dissipation member 41 is made of an insulating material, and the insulating material of the heat dissipation member 41 contains at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide.

[0029] <Jointing materials> The bonding member 60 is electrically conductive. The bonding member 60 is disposed between the upper surface of the first wiring portion 11 and the first electrode 21, and bonds the first wiring portion 11 and the first electrode 21 together. The first electrode 21 is electrically connected to the first wiring portion 11 via the bonding member 60. The bonding member 60 is disposed between the upper surface of the second wiring portion 12 and the second electrode 22, and bonds the second wiring portion 12 and the second electrode 22 together. The second electrode 22 is electrically connected to the second wiring portion 12 via the bonding member 60.

[0030] The bonding member 60 is disposed between the side surface of the first wiring portion 11 and the first side surface 41A of the heat dissipation member 41, and bonds the first wiring portion 11 and the heat dissipation member 41. The bonding member 60 is disposed between the side surface of the second wiring portion 12 and the second side surface 41B of the heat dissipation member 41, and bonds the second wiring portion 12 and the heat dissipation member 41.

[0031] The bonding member 60 is a metal member. For example, solder containing a gold-tin alloy can be used as the metal member of the bonding member 60. Alternatively, the bonding member 60 is a mixture of resin and metal particles. For example, silver particles can be used as the metal particles of the bonding member 60.

[0032] One or more light sources 1 can be arranged on a mounting substrate. For example, the first wiring portion 11 and the second wiring portion 12 are electrically connected to wiring portions of the mounting substrate via wires. Power is supplied to the first wiring portion 11 and the second wiring portion 12 through the wiring portions and wires of the mounting substrate. Alternatively, the first wiring portion 11 and the second wiring portion 12 can be electrically connected to the wiring portions of the mounting substrate by joining wiring portions that are arranged on the second surface 13B of the base material 13 and electrically connected to the first wiring portion 11 and the second wiring portion 12 to the wiring portions of the mounting substrate.

[0033] The power supplied to the first wiring portion 11 and the second wiring portion 12 is supplied to the active layer of the semiconductor laminate 23 through the bonding member 60, the first electrode 21, and the second electrode 22. This causes the active layer to emit light. The light emitted by the active layer is extracted to the outside of the light emitting device 50A mainly from the second element surface 23B side. The light emitting device 50A may have an element substrate 24 on the second element surface 23B of the semiconductor laminate 23. In this case, the upper surface of the element substrate 24 becomes the main light emitting surface of the light emitting device 50A. The element substrate 24 is, for example, a sapphire substrate. The element substrate 24 may be omitted.

[0034] The light emitting element 20 including the active layer generates heat as it emits light. The heat generated by the light emitting element 20 is dissipated to the first wiring portion 11 via the first electrode 21 and the bonding member 60, and is dissipated to the second wiring portion 12 via the second electrode 22 and the bonding member 60. Furthermore, according to this embodiment, the heat generated by the light emitting element 20 is dissipated to the first wiring portion 11 and the second wiring portion 12 via the heat dissipation member 41 and the bonding member 60.

[0035] The region of the first element surface 23A where the first electrode 21 and the second electrode 22 are not disposed (the region between the first electrode 21 and the second electrode 22) is a region where heat is more likely to concentrate than the region where the first electrode 21 and the second electrode 22 are disposed. By disposing the heat dissipation member 41 in such a region between the first electrode 21 and the second electrode 22, the heat generated by the light emitting element 20 can be dispersed through a path via the first electrode 21, the second electrode 22, and the heat dissipation member 41, and efficiently transferred to the first wiring portion 11 and the second wiring portion 12. This reduces the temperature (junction temperature) of the active layer, improving light emission efficiency and reliability. Furthermore, improved reliability allows for increased input power and improved light output.

[0036] Furthermore, each side surface (first side surface 41A and second side surface 41B) of heat dissipation member 41 and each side surface of each wiring portion (first wiring portion 11 and second wiring portion 12) of wiring board 10 are joined via joining members 60. This makes it easier to transfer heat from heat dissipation member 41 to the wiring portion compared to when the side surface of heat dissipation member 41 faces the wiring portion across a gap.

[0037] Furthermore, since the heat dissipation member 41 is positioned in the inter-wiring region 15 between the first wiring portion 11 and the second wiring portion 12, rotation of the light emitting device 50A in the XY plane and large positional deviation in the first direction X can be restricted when the bonding member 60 melts and becomes fluid during bonding.

[0038] In the example shown in FIG. 2, there is a gap between the lower surface 41D of the heat dissipation member 41 and the first surface 13A of the base material 13. The insulating material constituting the heat dissipation member 41 is exposed on the lower surface 41D of the heat dissipation member 41, which makes it difficult for the bonding material 60 to spread across the lower surface 41D. This reduces the possibility of a short circuit between the first electrode 21 and the second electrode 22 due to the bonding material 60 spreading across the lower surface 41D. Furthermore, by providing a gap between the lower surface 41D of the heat dissipation member 41 and the first surface 13A of the base material 13, the height of the upper surface of the light emitting device 50A can be adjusted to a predetermined height. For example, when multiple light sources are arranged on a mounting board, even if the heights of the heat dissipation members 41 vary, the heights of the upper surfaces of the multiple light emitting devices can be aligned to achieve a flat light-emitting surface.

[0039] [Modification of the first embodiment] 3, the lower surface 41D of the heat dissipation member 41 may be in contact with the first surface 13A of the base material 13. This allows the heat generated by the light emitting element 20 to be dissipated to the base material 13 via the lower surface 41D of the heat dissipation member 41, thereby further improving the heat dissipation performance of the light source 1.

[0040] [Simulation Description] The junction temperature Tj was calculated by simulation for three models 1 to 3 simulating the light source 1 according to the first embodiment and comparative examples 1 and 2. Models 1 to 3 and comparative example 2 differ in the thickness of the heat dissipation member 41. Comparative example 1 does not have a heat dissipation member 41. Here, the thickness of the heat dissipation member 41 represents the minimum distance in the third direction Z between the upper surface 41C and the lower surface 41D. In comparative example 2, the thickness of the heat dissipation member 41 is 30 μm, and the lower surface 41D of the heat dissipation member 41 is located above the inter-wiring region 15. In model 1, the thickness of the heat dissipation member 41 is 50 μm, and in model 2, the thickness of the heat dissipation member 41 is 100 μm, and the thickness of the heat dissipation member 41 in model 1 is 125 μm. In all of models 1 to 3, the lower surface 41D of the heat dissipation member 41 is located in the inter-wiring region 15 and is not in contact with the first surface 13A of the substrate 13. The width of the heat dissipation member 41 in the first direction X in Models 1 to 3 and Comparative Example 2 is 100 μm. In the cross-sectional view of the XZ cross section shown in FIG. 2, the area of ​​the inter-wiring region 15 is 30000 μm. 2 The heat dissipation member 41 was assumed to be made of silicon nitride, and the thermal conductivity of the heat dissipation member 41 was set to 130 (W / m·K). The joining member 60 was assumed to be made of solder, and the thermal conductivity of the joining member 60 was set to 30 (W / m·K).

[0041] The junction temperature Tj was calculated using the following equation (1). Tj=Ta+Rja×W……(1). Ta is the ambient temperature, which was set to 25°C. Rja is the thermal resistance (°C / W) from the light emitting element 20 to the ambient atmosphere. W is the input power (= forward current If × forward voltage Vf) (W), which was set to 3 (W).

[0042] The results of this simulation are shown below. In Comparative Example 1 (without the heat dissipation member 41), the maximum value of Tj was 40.8 (°C), and the average value of Tj was 37.2 (°C). In Comparative Example 2 (where the thickness of the heat dissipation member 41 is 30 μm), the maximum value of Tj was 39.9 (° C.) and the average value of Tj was 37.0 (° C.). In model 1 (where the thickness of the heat dissipation member 41 is 50 μm), the maximum value of Tj was 39.4 (° C.), and the average value of Tj was 36.8 (° C.). In model 2 (where the thickness of the heat dissipation member 41 is 100 μm), the maximum value of Tj was 39.0 (° C.) and the average value of Tj was 36.7 (° C.). In model 3 (where the thickness of the heat dissipation member 41 is 125 μm), the maximum value of Tj was 38.7 (° C.), and the average value of Tj was 36.5 (° C.).

[0043] From the above simulation results, it was confirmed that all of the three models 1 to 3 that imitate the light source 1 according to the first embodiment can reduce the maximum and average values ​​of Tj more than the comparative examples 1 and 2.

[0044] Furthermore, the thicker the heat dissipation member 41, the lower the maximum and average values ​​of Tj. In other words, in the cross-sectional view of the XZ cross section shown in FIG. 2, the greater the ratio of the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 to the area of ​​the inter-wiring region 15, the lower the maximum and average values ​​of Tj can be. In the cross-sectional view of the XZ cross section shown in FIG. 2, the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 in Model 1 is approximately 7% of the area of ​​the inter-wiring region 15. In the same cross-sectional view, the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 in Model 2 is approximately 23% of the area of ​​the inter-wiring region 15. In the same cross-sectional view, the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 in Model 3 is approximately 32% of the area of ​​the inter-wiring region 15. From the calculation results of Tj by the above simulation, for example, in the cross-sectional view of the XZ cross section shown in FIG. 2, the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 is preferably 30% or more of the area of ​​the inter-wiring region 15.

[0045] Increasing the width of the heat dissipation member 41 in the first direction X also makes it possible to increase the area of ​​the portion of the heat dissipation member 41 located in the inter-wiring region 15 in a cross-sectional view.

[0046] The following description of the other embodiments will focus mainly on the configurations that differ from the first embodiment.

[0047] [Second embodiment] A light source 2 according to the second embodiment will be described with reference to Fig. 4. The light source 2 includes a wiring substrate 10, a light emitting device 50B disposed on the wiring substrate 10, and a bonding member 60 disposed between the wiring substrate 10 and the light emitting device 50B.

[0048] The light emitting device 50B has a light emitting element 20 and a heat dissipation member 42. The heat dissipation member 42 extends in the third direction Z from the first element surface 23A of the semiconductor laminate 23 between the first electrode 21 and the second electrode 22 of the light emitting element 20 and in the inter-wiring portion region 15 of the wiring substrate 10 to the inter-wiring portion region 15. The heat dissipation member 42 extends in the second direction Y between the first electrode 21 and the second electrode 22 and in the inter-wiring portion region 15. The maximum width of the heat dissipation member 42 in the first direction X is smaller than the minimum width of the inter-wiring portion region 15 in the first direction X.

[0049] The heat dissipation member 42 has an insulating member 43. The insulating member 43 includes at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide.

[0050] The insulating member 43 has an upper surface 43C bonded to the first element surface 23A and a lower surface 43D facing the first surface 13A of the base material 13 in the inter-wiring region 15. The upper surface 43C of the insulating member 43 is bonded to the first element surface 23A with an insulating adhesive member. For example, a resin member can be used as the insulating adhesive member. Alternatively, the upper surface 43C of the insulating member 43 is directly bonded to the first element surface 23A.

[0051] The insulating member 43 has a first side surface 43A and a second side surface 43B located on opposite sides in the first direction X. The heat dissipation member 42 has metal members 44 arranged on the first side surface 43A and the second side surface 43B of the insulating member 43. A portion of the first side surface 43A faces a side surface of the first wiring portion 11 via the metal member 44 in the inter-wiring portion region 15. A portion of the second side surface 43B faces a side surface of the second wiring portion 12 via the metal member 44 in the inter-wiring portion region 15. The thermal conductivity of the metal member 44 is higher than that of the insulating member 43.

[0052] The bonding member 60 is disposed between the side surface of the first wiring portion 11 and the metal member 44, and bonds the first wiring portion 11 and the heat dissipation member 42. The bonding member 60 is disposed between the side surface of the second wiring portion 12 and the metal member 44, and bonds the second wiring portion 12 and the heat dissipation member 42.

[0053] By using the metal member 44, which has a higher thermal conductivity than the insulating member 43, on the side of the heat dissipation member 42 facing the first wiring portion 11 and the second wiring portion 12, it is possible to facilitate heat transfer from the heat dissipation member 42 to the first wiring portion 11 and the second wiring portion 12. Furthermore, compared to when the side of the heat dissipation member 42 is made of resin or ceramics, the bonding member 60 is more likely to wet and spread on the side of the heat dissipation member 42 (the side of the metal member 44), making it less likely that a gap will be formed between the bonding member 60 and the heat dissipation member 42, and thus it is possible to facilitate heat transfer from the heat dissipation member 42 to the first wiring portion 11 and the second wiring portion 12.

[0054] The metal member 44 contains at least one of copper, iron, silver, aluminum, nickel, titanium, gold, tungsten, chromium, zinc, and platinum. For example, the thermal conductivity of the metal member 44 made of platinum is 3.0 W / (m·K) or more higher than the thermal conductivity of the joining member 60 made of solder whose main component is tin. This makes it easier to transfer heat from the heat dissipation member 42 to the first wiring portion 11 and the second wiring portion 12.

[0055] In the second embodiment, the lower surface 43D of the insulating member 43 may be in contact with the first surface 13A of the base material 13. This allows heat generated by the light emitting element 20 to be dissipated to the base material 13 via the lower surface 43D of the insulating member 43, thereby further improving the heat dissipation performance of the light source 2.

[0056] Alternatively, there may be a gap between the lower surface 43D of the insulating member 43 and the first surface 13A of the base material 13. In this case, the lower surface 43D of the insulating member 43 is exposed from the metal member 44, making it difficult for the bonding member 60 to wet and spread over the lower surface 43D, and making it difficult for the first electrode 21 and the second electrode 22 to be short-circuited through the bonding member 60.

[0057] [Third embodiment] 5 and 6, a light source 3 according to a third embodiment will be described. The light source 3 includes a wiring substrate 10, a light emitting device 50C disposed on the wiring substrate 10, and a bonding member 60 disposed between the wiring substrate 10 and the light emitting device 50C.

[0058] The light emitting device 50C includes a light emitting element 20 and a heat dissipation member 41, which is an insulating member similar to that of the first embodiment. The heat dissipation member 41 extends in the third direction Z from the first element surface 23A of the semiconductor laminate 23 to the inter-wiring portion region 15 between the first electrode 21 and the second electrode 22 of the light emitting element 20 and in the inter-wiring portion region 15 of the wiring substrate 10.

[0059] A portion of the first electrode 21 of the light emitting element 20 is disposed on a first side surface 41A of the heat dissipation member 41, which is an insulating member. A portion of the second electrode 22 of the light emitting element 20 is disposed on a second side surface 41B of the heat dissipation member 41, which is an insulating member. The first electrode 21 extends along the first element surface 23A of the semiconductor laminate 23 and the first side surface 41A of the heat dissipation member 41, and is in contact with the first element surface 23A and the first side surface 41A. The second electrode 22 extends along the first element surface 23A of the semiconductor laminate 23 and the second side surface 41B of the heat dissipation member 41, and is in contact with the first element surface 23A and the second side surface 41B.

[0060] The first electrode 21 and the second electrode 22 in the third embodiment may be made of the same material as the metal member 44 described in the second embodiment. The thermal conductivity of the first electrode 21 and the second electrode 22 is higher than the thermal conductivity of the heat dissipation member 41, which is an insulating member.

[0061] The bonding member 60 is disposed between a side surface of the first wiring portion 11 and a part of the first electrode 21 disposed on the first side surface 41A of the heat dissipation member 41, and bonds the first wiring portion 11 and the heat dissipation member 41 via the part of the first electrode 21. The bonding member 60 is disposed between a side surface of the second wiring portion 12 and a part of the second electrode 22 disposed on the second side surface 41B of the heat dissipation member 41, and bonds the second wiring portion 12 and the heat dissipation member 41 via the part of the second electrode 22.

[0062] The first electrode 21 is bonded to the upper surface and side surfaces of the first wiring portion 11 via a bonding member 60. This allows the bonding area between the first electrode 21 and the first wiring portion 11 to be larger than when the first electrode 21 is bonded only to the upper surface of the first wiring portion 11, and the electrical resistance between the first electrode 21 and the first wiring portion 11 to be reduced. The second electrode 22 is bonded to the upper surface and side surfaces of the second wiring portion 12 via a bonding member 60. This allows the bonding area between the second electrode 22 and the second wiring portion 12 to be larger than when the second electrode 22 is bonded only to the upper surface of the second wiring portion 12, and the electrical resistance between the second electrode 22 and the second wiring portion 12 to be reduced.

[0063] Furthermore, by positioning a portion of the electrodes (first electrode 21 and second electrode 22) having a higher thermal conductivity than the heat dissipation member 41 between the side surfaces (first side surface 41A and second side surface 41B) of the heat dissipation member 41 and the side surfaces of the wiring portions (first wiring portion 11 and second wiring portion 12), heat can be more easily transferred from the heat dissipation member 41 to the first wiring portion 11 and second wiring portion 12.

[0064] [Fourth embodiment] 7 and 8, a light source 4 according to a fourth embodiment will be described. The light source 4 includes a wiring substrate 10, a light emitting device 50D disposed on the wiring substrate 10, and a bonding member 60 disposed between the wiring substrate 10 and the light emitting device 50D.

[0065] The light emitting device 50D according to the fourth embodiment further includes a peripheral heat dissipation member 45 in addition to the configuration of the light emitting device 50C according to the third embodiment. The peripheral heat dissipation member 45 is made of the same material as the heat dissipation member 41. The peripheral heat dissipation member 45 is disposed on the outer periphery of the first element surface 23A in a plan view. The peripheral heat dissipation member 45 covers the outermost side surfaces in the first direction X and the second direction Y of the first electrode 21 located on the first element surface 23A, and the outermost side surfaces in the first direction X and the second direction Y of the second electrode 22 located on the first element surface 23A. The outermost side surfaces of the first electrode 21 and the second electrode 22 located on the first element surface 23A are not exposed to the outside of the light emitting device 50D.

[0066] The peripheral heat dissipation member 45 and the upper surface of the first wiring portion 11 are joined by a joining member 60. The peripheral heat dissipation member 45 and the upper surface of the second wiring portion 12 are joined by a joining member 60. This allows the heat generated by the light emitting element 20 to be dissipated to the first wiring portion 11 and the second wiring portion 12 via the peripheral heat dissipation member 45 and the joining member 60.

[0067] In the third and fourth embodiments, the lower surface 41D of the heat dissipation member 41 may be in contact with the first surface 13A of the base material 13. This allows the heat generated by the light emitting element 20 to be dissipated to the base material 13 via the lower surface 41D of the heat dissipation member 41, thereby further improving the heat dissipation performance of the light source 3.

[0068] Alternatively, there may be a gap between the lower surface 41D of the heat dissipation member 41 and the first surface 13A of the base material 13. In this case, the lower surface 41D of the heat dissipation member 41, which is an insulating member, is exposed from the first electrode 21 and the second electrode 22, making it difficult for the bonding member 60 to wet and spread over the lower surface 41D, and making it difficult for a short circuit to occur between the first electrode 21 and the second electrode 22 through the bonding member 60.

[0069] Embodiments of the present invention may include the following light sources and light emitting devices.

[0070] [Section 1] A wiring board; a light emitting device disposed on the wiring substrate; a bonding member disposed between the wiring board and the light emitting device; Equipped with The wiring board is a substrate having a first surface and a second surface opposite the first surface; a first wiring portion disposed on the first surface; a second wiring portion disposed on the first surface and spaced apart from the first wiring portion; and The light emitting device comprises: a light emitting element including: a semiconductor laminate having a first element surface facing the first surface and a second element surface located on the opposite side of the first element surface; a first electrode disposed on the first element surface; and a second electrode disposed on the first element surface away from the first electrode; a heat dissipation member extending from the first element surface to an inter-wiring region between the first wiring portion and the second wiring portion and between the first electrode and the second electrode; and The joining member is a first wiring portion and a first electrode; a second wiring portion disposed between an upper surface of the second wiring portion and the second electrode, and connecting the second wiring portion and the second electrode; a heat sink disposed between a side surface of the first wiring portion and the heat sink, and joining the first wiring portion and the heat sink; a light source disposed between a side surface of the second wiring portion and the heat dissipation member, and joining the second wiring portion and the heat dissipation member; [Section 2] The heat dissipation member is an insulating member having a first side surface facing the side surface of the first wiring portion in the inter-wiring portion region and a second side surface facing the side surface of the second wiring portion in the inter-wiring portion region; a metal member disposed on the first side surface and the second side surface; Item 1. The light source according to item 1, [Section 3] Item 3. The light source according to item 2, wherein the thermal conductivity of the metal member is higher than the thermal conductivity of the joining member by 3.0 W / (m·K) or more. [Section 4] Item 4. The light source according to item 2 or 3, wherein the metal member includes at least one of copper, iron, silver, aluminum, nickel, titanium, gold, tungsten, chromium, zinc, and platinum. [Section 5] The heat dissipation member is an insulating member having a first side surface facing the side surface of the first wiring portion in the inter-wiring portion region and a second side surface facing the side surface of the second wiring portion in the inter-wiring portion region; Item 1, 3, or 4. The light source according to item 1, 3, or 4, wherein a portion of the first electrode is disposed on the first side surface and a portion of the second electrode is disposed on the second side surface. [Section 6] Item 6. The light source according to any one of items 2 to 5, wherein the insulating member includes at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide. [Section 7] 7. The light source according to any one of items 1 to 6, wherein the joining member is a mixture of resin and metal particles, or a metal member. [Section 8] 8. The light source according to any one of items 1 to 7, wherein the light emitting device further includes a peripheral heat dissipation member disposed on the outer periphery of the first element surface in a plan view. [Section 9] Item 9. The light source according to any one of items 1 to 8, wherein the heat dissipation member is in contact with the first surface. [Section 10] Item 10. The light source according to any one of items 1 to 9, wherein, in a cross-sectional view, an area of ​​a portion of the heat dissipation member located in the inter-wiring region is 30% or more of an area of ​​the inter-wiring region. [Section 11] a light emitting element including a semiconductor laminate having a first element surface and a second element surface located opposite to the first element surface, a first electrode disposed on the first element surface, and a second electrode disposed on the first element surface; a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode; Equipped with the first electrode and the second electrode are spaced apart from each other in a first direction; The heat dissipation member is an insulating member having a first side surface and a second side surface positioned opposite to each other in the first direction; a metal member disposed on the first side surface and the second side surface; A light emitting device comprising: [Section 12] Item 12. The light emitting device according to item 11, wherein the metal member has a part of the first electrode disposed on the first side surface and a part of the second electrode disposed on the second side surface. [Section 13] a light emitting element including a semiconductor laminate having a first element surface and a second element surface located opposite to the first element surface, a first electrode disposed on the first element surface, and a second electrode disposed on the first element surface; a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode; Equipped with the first electrode and the second electrode are spaced apart from each other in a first direction; The heat dissipation member is an insulating member having a first side surface and a second side surface positioned opposite to each other in the first direction; A light emitting device, wherein a portion of the first electrode is disposed on the first side surface, and a portion of the second electrode is disposed on the second side surface. [Section 14] Item 14. The light emitting device according to any one of items 11 to 13, wherein the insulating member includes at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide. [Section 15] Item 15. The light emitting device according to any one of items 11 to 14, further comprising a peripheral heat dissipation member disposed on the outer periphery of the first element surface in plan view.

[0071] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention. In addition, a person skilled in the art may come up with various modifications and alterations within the scope of the concept of the present invention, and these modifications and alterations also fall within the scope of the present invention. [Explanation of symbols]

[0072] DESCRIPTION OF SYMBOLS 1, 2, 3, 4...light source, 10...wiring substrate, 11...first wiring portion, 12...second wiring portion, 13...base material, 13A...first surface, 13B...second surface, 15...area between wiring portions, 20...light emitting element, 21...first electrode, 22...second electrode, 23...semiconductor laminate, 23A...first element surface, 23B...second element surface, 24...element substrate, 41...heat dissipation member, 41A...first side surface, 41B...second side surface, 41C...upper surface, 41D...lower surface, 42...heat dissipation member, 43...insulating member, 43A...first side surface, 43B...second side surface, 43C...upper surface, 43D...lower surface, 44...metal member, 45...periphery heat dissipation member, 50A, 50B, 50C, 50D...light emitting device, 60...bonding member

Claims

1. A wiring board; a light emitting device disposed on the wiring substrate; a bonding member disposed between the wiring board and the light emitting device; Equipped with The wiring board is a substrate having a first surface and a second surface opposite the first surface; a first wiring portion disposed on the first surface; a second wiring portion disposed on the first surface and spaced apart from the first wiring portion; and The light emitting device comprises: a light emitting element including: a semiconductor laminate having a first element surface facing the first surface and a second element surface located on the opposite side of the first element surface; a first electrode disposed on the first element surface; and a second electrode disposed on the first element surface away from the first electrode; a heat dissipation member extending from the first element surface to an inter-wiring region between the first wiring portion and the second wiring portion and between the first electrode and the second electrode; and The joining member is a first wiring portion and a second wiring portion disposed between the first electrode and the upper surface of the first wiring portion; a second wiring portion disposed between an upper surface of the second wiring portion and the second electrode, and connecting the second wiring portion and the second electrode; a heat sink disposed between a side surface of the first wiring portion and the heat sink, and connecting the first wiring portion and the heat sink; a light source disposed between a side surface of the second wiring portion and the heat dissipation member, and joining the second wiring portion and the heat dissipation member;

2. The heat dissipation member is an insulating member having a first side surface facing the side surface of the first wiring portion in the inter-wiring portion region and a second side surface facing the side surface of the second wiring portion in the inter-wiring portion region; a metal member disposed on the first side surface and the second side surface; 10. The light source of claim 1, wherein:

3. The light source according to claim 2 , wherein the thermal conductivity of the metal member is higher than the thermal conductivity of the joining member by at least 3.0 W / (m·K).

4. 3. The light source of claim 2, wherein the metal member comprises at least one of copper, iron, silver, aluminum, nickel, titanium, gold, tungsten, chromium, zinc, or platinum.

5. The heat dissipation member is an insulating member having a first side surface facing the side surface of the first wiring portion in the inter-wiring portion region and a second side surface facing the side surface of the second wiring portion in the inter-wiring portion region; The light source of claim 1 , wherein a portion of the first electrode is disposed on the first side and a portion of the second electrode is disposed on the second side.

6. The light source according to claim 2 or 5, wherein the insulating member includes at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide.

7. The light source according to claim 1 , wherein the joining member is a mixture of resin and metal particles, or a metal member.

8. The light source according to claim 1 , wherein the light emitting device further comprises a peripheral heat dissipation member disposed on a peripheral portion of the first element surface in a plan view.

9. The light source according to claim 1 , wherein the heat dissipation member is in contact with the first surface.

10. 6. The light source according to claim 1, wherein, in a cross-sectional view, an area of ​​a portion of the heat dissipation member located in the inter-wiring region is 30% or more of an area of ​​the inter-wiring region.

11. a light emitting element including a semiconductor laminate having a first element surface and a second element surface located opposite to the first element surface, a first electrode disposed on the first element surface, and a second electrode disposed on the first element surface; a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode; Equipped with the first electrode and the second electrode are spaced apart from each other in a first direction; The heat dissipation member is an insulating member having a first side surface and a second side surface positioned opposite to each other in the first direction; a metal member disposed on the first side surface and the second side surface; A light emitting device comprising:

12. The light-emitting device according to claim 11 , wherein the metal member has a part of the first electrode disposed on the first side surface and a part of the second electrode disposed on the second side surface.

13. a light emitting element including a semiconductor laminate having a first element surface and a second element surface located opposite to the first element surface, a first electrode disposed on the first element surface, and a second electrode disposed on the first element surface; a heat dissipation member extending downward from the first element surface between the first electrode and the second electrode; Equipped with the first electrode and the second electrode are spaced apart from each other in a first direction; The heat dissipation member is an insulating member having a first side surface and a second side surface positioned opposite to each other in the first direction; A light emitting device, wherein a portion of the first electrode is disposed on the first side surface and a portion of the second electrode is disposed on the second side surface.

14. 14. The light emitting device according to claim 11, wherein the insulating member includes at least one of silicon nitride, aluminum nitride, silicon oxide, and aluminum oxide.

15. The light emitting device according to claim 11 , further comprising a peripheral heat dissipation member disposed on a peripheral portion of the first element surface in a plan view.

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