Modularization method using adhesive bonding of heterogeneous material component for semiconductor etching process

Abstract

To provide a modularization method using adhesive bonding of heterogeneous material components for semiconductor etching processes.SOLUTION: The present invention relates to a modularization method using adhesive bonding of heterogeneous material components for semiconductor etching processes. The modularization method using adhesive bonding of heterogeneous material components includes: a stage for selecting components made of heterogeneous materials for advancing the semiconductor etching process; a stage for determining the characteristics of an adhesive for bonding the contact surfaces of selected heterogeneous material components; a stage for determining component shapes based on bonding surfaces; and a stage for bonding heterogeneous material components with finalized shapes.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This research was conducted with funding from the Korean government (Ministry of Trade, Industry and Energy) and support from the World Class Plus Project Foundation (P0021943, Development of oxide film dry etching equipment for next-generation 300mm high aspect ratio process).

[0002] The present invention relates to a modularization method for bonding dissimilar material components for a semiconductor etching process, and more particularly to a modularization method for bonding dissimilar material components, which are made of different materials and form semiconductor etching equipment, using an adhesive to form an assemblable module. [Background technology]

[0003] Semiconductor etching equipment applies high-power power to meet semiconductor market trends requiring finer patterns and higher aspect ratios, and various adjustment methods have been developed to accommodate these trends. As a result, the materials and shapes of components surrounding the application electrode are becoming more diverse to enable stable application of higher power while incorporating more diverse functions, resulting in a rapid increase in the overall number of components. Due to the characteristics of semiconductor equipment, there are many metal components that receive power or serve as ground, and the types and number of non-metallic components that provide insulation between these components are also increasing. Metallic and non-metallic components are often connected to each other using fastening means such as bolts or rivets during assembly. For example, Korean Patent Publication No. 10-2010-0095284 discloses an upper electrode for semiconductor etching equipment having such a structure. U.S. Patent Publication No. 2002-0127853 also discloses an apparatus for plasma processing of semiconductor substrates, such as an electrode assembly. In the case of the upper electrode structure disclosed in the prior art, the electrode and the insulator are fastened by a bolt or similar fastening means, which has the disadvantage of causing process problems such as corrosion of the fastening portion due to plasma or generation of particles. Therefore, a method for joining parts made of different materials that can solve these disadvantages needs to be developed.

[0004] The present invention is intended to solve the problems of the prior art and has the following objects. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Publication No. 10-2010-0095284 (TCK Corporation, published 2010.08.30.) Upper electrode of semiconductor manufacturing equipment [Patent Document 2] U.S. Patent Publication No. 2002-0127853 A1 (Jerome S. Hubacek et al., published September 12, 2002) Electrode for Plasma Processes and Method for Manufacture and Use Thereof Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a modularization method for bonding dissimilar material components for a semiconductor etching process, which can prevent local plasma generation or particle generation by bonding dissimilar material components for forming a process chamber for a semiconductor etching process with an adhesive. [Means for solving the problem]

[0007] According to a suitable embodiment of the present invention, a method for modularization by bonding dissimilar material components includes the steps of selecting dissimilar material components for carrying out a semiconductor etching process; determining the characteristics of an adhesive for bonding contact surfaces of the selected dissimilar material components; determining the component shape based on the bonding surfaces; and bonding the dissimilar material components whose shapes have been determined.

[0008] According to another preferred embodiment of the present invention, the adhesive properties include resistance to plasma, prevention of deposition of etching process intermediate products, prevention of particle generation, prevention of deterioration by plasma, or prevention of corrosion by plasma.

[0009] According to yet another suitable embodiment of the present invention, the adhesive surface comprises at least one folded surface.

[0010] According to yet another suitable embodiment of the present invention, the adhesive is silicone-based or ceramic-based.

[0011] According to yet another suitable embodiment of the invention, the adhesive has a coefficient of thermal expansion that is smaller than the coefficient of thermal expansion of at least one of the dissimilar material parts.

[0012] According to yet another suitable embodiment of the invention, the dissimilar material parts are metallic and non-metallic material parts.

[0013] According to yet another preferred embodiment of the present invention, the dissimilar material components are an internal electrode and a first insulator forming an upper electrode module of an etching process chamber, or an external electrode and a second insulator.

[0014] According to yet another suitable embodiment of the present invention, the internal electrode and the first insulator form a first module, and the external electrode and the second insulator form a second module, which is coupled to the first module. [Effects of the Invention]

[0015] The modularization method for bonding dissimilar material components for semiconductor etching processes according to the present invention uses adhesive to join components made of different materials, thereby eliminating the need for fastening components such as bolts and nuts. This modularization of components improves the convenience of equipment assembly and maintenance. Furthermore, the method according to the present invention eliminates various causes of defects caused by locally generated fine plasma and particles by eliminating gaps between components using adhesive. Due to the characteristics of semiconductor equipment, there are numerous metal components that are powered or grounded, and depending on the relationship between these components, the types and numbers of non-metallic components that provide insulation between components also vary. The increased number of components leads to assembly tolerances that accumulate, resulting in minute differences between different chambers. Furthermore, differences in process results within the same chamber can occur depending on the experience of maintenance personnel. Furthermore, process by-products generated during processing accumulate in the empty spaces between multiple components, causing particles. High-power power supplies can generate local plasma in the fine gaps between components, leading to equipment shutdowns, reduced productivity, and increased maintenance costs and time. This problem may arise due to the limitations of having to design metal and non-metal components independently, since they are made of different materials. Specifically, the independent design of the joining components inevitably results in various types of tolerances, such as design tolerances, manufacturing tolerances, and assembly tolerances, which can cause various defects during the etching process. The method according to the present invention solves these drawbacks. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a view illustrating an embodiment of a modularization method for a semiconductor etching process by bonding components made of different materials according to the present invention; [Figure 2] 1 is a diagram showing an embodiment of a structure in which two different types of components are modularized by an adhesive method according to the method of the present invention. [Figure 3]1 is a view showing an embodiment of a process chamber for etching to which a method according to the present invention is applied; [Figure 4] 10 is a diagram illustrating another embodiment of a modularization method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the accompanying drawings, but the embodiments are for a clear understanding of the present invention and the present invention is not limited thereto. In the following description, components having the same reference numerals in different drawings have similar functions, and therefore, unless necessary for understanding the invention, repeated description will not be provided. Known components will be briefly described or omitted, but should not be understood as being excluded from the embodiments of the present invention.

[0018] FIG. 1 illustrates an embodiment of a modularization method for a semiconductor etching process by bonding components made of different materials according to the present invention.

[0019] 1, a modularized method for bonding dissimilar components for a semiconductor etching process includes a step (P11) of selecting components made of dissimilar materials for use in a semiconductor etching process, a step (P12) of determining adhesive properties for bonding contact surfaces of the selected components made of dissimilar materials, a step (P13) of determining component shapes based on the bonding surfaces, and a step (P14) of bonding the components made of dissimilar materials whose shapes have been determined. Preferably, at least a portion of the dissimilar components is exposed to plasma, but this is not limiting.

[0020] Dissimilar material components are two components made of different materials and performing different functions. For example, the two dissimilar components can be a first component made of a metal material and functioning as an electrode, and a second component made of a non-metallic material such as ceramic and functioning as an insulator. At least a portion of the first and second components is exposed to plasma during an etching process, which can cause process defects during the etching process. For example, plasma or particles can be generated at the joining site. The first and second components can be bonded to each other to form at least one contact surface. The at least one contact surface can have various shapes, for example, a circular contact surface with an L-shaped cross section, but is not limited to this. Once the first and second components made of dissimilar materials to be bonded to each other and have at least one contact surface are selected (P11), adhesive characteristics are determined (P12). The adhesive characteristics can be determined based on the installation and intended use of the dissimilar components or the environment in which the dissimilar components will be used. Specifically, the adhesive properties include resistance to plasma generation or resistance to particle generation. Such adhesive properties prevent plasma generation at the bonding site by filling the space where plasma can be generated with the adhesive. Plasma resistance means that the adhesive is resistant to plasma and is not altered or corroded by the plasma. The adhesive properties include properties that prevent phenomena that cause process errors, such as deposition of process intermediates. The adhesive properties may also include thermal expansion, elasticity, insulation, tensile, or elasticity. For example, the adhesive may have a smaller coefficient of thermal expansion than at least one of the components. Alternatively, the adhesive may have greater elasticity or greater elasticity than at least one of the components. The adhesive may be silicon-based or ceramic-based, contain 0.1-10 wt% SiO2 or silica, and contain various organic or inorganic components with adhesive properties. The adhesive may have a tensile strength of 10-150 kgf / cm. 2 Electrical resistance of 40~200%, elongation ratio of 40~200%, dielectric breakdown strength of 5~40KV / mm, insulation coefficient of 2.4~8.0, 1.0×10 14 ~1.0×10 13 Ω cm2 Electrical resistance: 100~400psi (kg cm 2 ) adhesive strength, 0.5 x 10 -6 ~1.0×10 -4 Thermal expansion coefficient of cm / cm / ℃, 50~300kg / cm 2 Compressive strength of 24~80kg / cm 2 The adhesive properties are determined so that the adhesive has properties such as plasma generation resistance, particle generation resistance, or deposition prevention properties for process intermediates while maintaining strong adhesion during the etching process. Once the adhesive properties are determined (P12), the thickness of the adhesive surface is selected based on the adhesive properties, and the shapes of the first and second parts are determined (P13). For example, the thickness of the adhesive surface may be 10 to 2,000 μm, but is not limited thereto. Once the dimensions or shapes of the first and second parts are determined based on the thickness of the adhesive surface (P13), the first and second parts can be bonded to each other with an adhesive (P14). In this way, parts made of different materials that are in contact with each other on at least one surface with an adhesive can be bonded to form a modular part (P15). Once two parts made of different materials are bonded to each other to form a module, the module can be bonded to another part and placed in a chamber for, for example, an etching process. For example, the module can be part of an upper electrode module in an etching process chamber. A portion of the adhesive applied to the bonding surfaces of the two components is exposed to plasma during the process, and the module formed by the two components can become a part of the electrode for plasma generation. As described above, the adhesive has resistance to plasma generation and particle generation, so that plasma generation is prevented at the bonding surfaces during the plasma generation process and particle generation is prevented at the bonding surfaces exposed to plasma. An embodiment of such a bonding structure for dissimilar material products will be described below.

[0021] FIG. 2 illustrates an embodiment of a structure in which two dissimilar components are modularized in an adhesive manner by the method according to the invention.

[0022] Referring to FIG. 2, the first part 21 may be made of a metal material, and the second part 22 may be made of an insulating material such as ceramic. The first part 21 may be a thick disc-shaped member, and the second part 22 may be a thick disc-shaped member with a hole formed in the center. The hole formed in the second part 22 may form a horizontal "L"-shaped frame. The second part 22 may be bonded such that the inner frame contacts the periphery of the first part 21. In this bonded structure between the first part 21 and the second part 22, the lower surfaces and portions of the contact surfaces of the first and second parts 21 and 22 are exposed to the plasma 24.

[0023] As shown in FIG. 2B, parts 21 and 22 made of different materials are designed independently and connected by fastening means 25a and 25b, such as bolts and nuts, resulting in various types of tolerances. This can lead to problems such as local plasma generation or particle generation. Specifically, first part 21 and second part 22 have horizontal and vertical contact surfaces, and gaps G can form at the horizontal or vertical contact surfaces. These gaps G can lead to local plasma generation or particle generation. To eliminate these gaps G, as shown in FIG. 2A, adhesive is used to form bonding surfaces 23 between the contact surfaces of first and second parts 21 and 22. These bonding surfaces 23 can consist of a vertical bonding surface with a circular vertical band and a horizontal bonding surface with a circular horizontal band. The formation of these bonding surfaces 23 prevents local plasma generation and particle generation. Furthermore, the entire equipment can be manufactured modularized by bonding components 21 and 22 that should be joined together in this manner, improving the ease of assembly and maintenance. In semiconductor etching equipment, electrical and heat flow are key development parameters that determine the overall performance of the equipment. Therefore, the adhesive forming the bonding surface 23 must have properties suitable for process conditions, such as exposure to plasma and various electromagnetic and temperature changes generated during the etching process. For example, the adhesive must have an appropriate thermal expansion coefficient, elasticity, or thermal conductivity, and various additives may be included to achieve these properties. For example, an adhesive with high thermal conductivity or heat transfer properties must be used between the upper electrode heater and the cooling means. In contrast, radiating heat to the outside, except for the space where the heater must raise its temperature, is inefficient and potentially hazardous to safety, so the bonding surface 23 may be formed of an insulating material. Furthermore, since the internal and external electrodes must be electrically insulated, it is advantageous for the bonding surface 23 to have high insulating properties. The properties of the adhesive can be appropriately selected depending on the function of the first component 21 or the second component 22 or the conditions of the etching process.For example, if the first component 21 is a metal electrode and the second component 22 is a non-metal insulator, the insulating coefficient of the bonding surface 23 can be selected appropriately for the characteristics of the materials. Also, the bonding surface 23 can have a heat transfer coefficient that is the same as or smaller than that of the second component 22. The bonding characteristics can be determined in various ways, and the present invention is not limited thereby.

[0024] FIG. 3 illustrates an embodiment of a process chamber for etching to which the method according to the present invention is applied.

[0025] Referring to FIG. 3, the process chamber may include a peripheral wall 31; a lower electrode module 34; and an upper electrode module disposed above the lower electrode module 34 for generating plasma together with the lower electrode module 34. The upper electrode module includes a thick, disc-shaped inner electrode 35; a first insulator 36 made of a ceramic material bonded to the periphery of the inner electrode 35; a second insulator 37 made of a material such as quartz and disposed outside the first insulator; and an outer electrode 38 bonded to the second insulator 37 and disposed outside the inner electrode 35. An inner heater (IH), an outer heater (OH), and a cooling means 32 are provided to control the temperatures of the inner electrode 35 and outer electrode 38. The inner electrode 35 is fixed in place by a gas distribution plate 33. The gas distribution plate 33 may function as a fixing block for fixing the lower inner electrode 35. Furthermore, the first and second insulators 36 and 37 and the outer electrode 38 are fixed in place by a support block 39. The upper portions of the first and second insulating components 36 and 37 may be coupled to the support block 39 by fastening units B1 and B2. The internal electrode 35 and the external electrode 38 may be silicon electrodes, but the electrode material is not limited thereto. In an etching process chamber having such a structure, a circular contact surface having an L-shaped vertical cross section may be formed between the internal electrode 35 and the ceramic first insulating component 36, and the contact surface may be bonded with an adhesive to form a first bonding surface AS1. A second bonding surface AS2 may be formed between the external electrode 38 and the second insulating component 37 or between the external electrode 38 and the first insulating component 36. A third bonding surface AS3 may be formed between the first insulating component 36 and the second insulating component 37. In this manner, in the upper electrode module of the oxide film etching process chamber, the first bonding surface AS1 may be formed on the contact surface formed by the internal electrode 35 and the ceramic first insulating component 36 surrounding the internal electrode 35, and then bonded. This allows for bonding and fixing by applying adhesive in the form of a ceramic material, which would otherwise be impossible to do by tapping due to the characteristics of the silicone material.The formation of the first adhesive surface (AS1) eliminates gaps that may occur between the ceramic portion and the silicon electrode, preventing local plasma generation and particle generation. Furthermore, component modularization improves component replacement convenience. The adhesive forming the first adhesive surface (AS1) advantageously has high thermal conductivity, preferably greater than that of the first insulating component 36 but equivalent to that of the internal electrode 35. Forming a stepped portion on the internal electrode 35 allows for appropriate adjustment of the adhesive area, thereby stably securing the internal electrode 35 to the first insulating component 36. A second insulating component 37 made of quartz crystal is provided to prevent exposure of a fastening unit (B2), such as a bolt, that secures the ceramic first insulating component 36 to the support block 39, surrounding the internal electrode 35. A silicon external electrode 38 is provided on the underside of the second insulating component 37, contacting the bent portion of the second insulating component 37 along a circular shape. An adhesive can be applied to this contact surface to form a second adhesive surface (AS2), which allows two parts 37, 38 that are difficult to fix by tapping, to be easily fixed. The adhesive forming the second adhesive surface (AS2) can have the same or similar properties as the adhesive forming the first adhesive surface (AS1). The third adhesive surface (AS3) can be selectively formed, or other fixing means can be applied, and the present invention is not limited thereto.

[0026] FIG. 4 illustrates another embodiment of the modularization method according to the present invention.

[0027] Referring to FIG. 4, a modularization method for manufacturing an etching process chamber includes the steps of: forming a first contact module by bonding an internal electrode and a first insulator, at least a portion of which contacts the internal electrode and forms a contact surface, with an adhesive (P41); forming a second contact module by bonding an external electrode disposed around the internal electrode and a second insulator, at least a portion of which contacts the external electrode and forms a contact surface, with an adhesive (P42); joining or coupling the first and second contact modules together (P43); and fixing the first and second contact modules to a fixing block (P44). The internal electrode and the external electrode may form an upper electrode module or a showerhead of the etching process chamber. The internal electrode may be disc-shaped, and the first insulator may be in contact with the internal electrode in a manner surrounding the external peripheral portion of the internal electrode. The internal electrode and the first insulator may be made of different materials. The contact surface between the internal electrode and the first insulator may be L-shaped or stepped, and adhesive may be applied to the contact surface to form the first contact module (P41). The external electrode may be disposed to surround the exterior of the internal electrode, and the second insulator may be disposed above the external electrode, forming an "L"-shaped or stepped contact surface with the external electrode. An adhesive may be applied to this contact surface to form an adhesive surface, thereby bonding the external electrode and the second insulator together to form a second bonding module (P42). The first and second bonding modules may be bonded to each other or coupled by other appropriate methods depending on the structure of the etching chamber, and may optionally be maintained in contact without a separate bonding means (P43). The first and second bonding modules are then fixed to a fixing block disposed in the etching process chamber by a fastening unit such as a bolt or other appropriate means (P44), although this is not intended to limit the present invention. As described above, at least a portion of the internal electrode, external electrode, first insulator, or second insulator is exposed to plasma generated during the etching process. The adhesive may also be resistant to plasma generation or particle generation and have suitable heat transfer properties. The adhesive may have adhesive properties suitable for the etching process conditions, but this is not intended to limit the present invention.

[0028] Although the present invention has been described in detail above with reference to the embodiments presented, those skilled in the art may make various modifications and alterations without departing from the technical spirit of the present invention by referring to the embodiments presented. The present invention is not limited by such modifications and alterations, but is limited only by the scope of the claims. [Explanation of symbols]

[0029] 21: First part 22: Second part 23: Adhesive surface 24: Plasma 25a, 25b: Fastening means 31: Surrounding wall 32: Cooling means 33: Gas distribution plate 34: Lower electrode module 35: Internal electrode 36: First insulating part 37: Second insulating part 38: External electrode

Claims

1. selecting a component made of a different material for performing a semiconductor etching process; determining the properties of an adhesive for bonding the contact surfaces of the selected dissimilar materials; determining a part shape based on the bonding surface; a step of bonding the parts made of different materials whose shapes have been determined; A modularization method by bonding components made of different materials, including:

2. 2. The modularization method for bonding dissimilar material components according to claim 1, wherein the adhesive properties include resistance to plasma, prevention of deposition of etching process intermediate products, prevention of particle generation, prevention of deterioration by plasma, or prevention of corrosion by plasma.

3. The method for modularizing components made of different materials by bonding according to claim 1 , wherein the bonding surface includes at least one folded surface.

4. 2. The modularization method according to claim 1, wherein the adhesive is a silicon-based or ceramic-based adhesive.

5. 2. The modularization method according to claim 1, wherein the adhesive has a thermal expansion coefficient smaller than that of at least one of the components made of different materials.

6. 2. The modularization method for bonding parts made of different materials according to claim 1, wherein the parts made of different materials are made of a metal material and a non-metal material.

7. 2. The modularization method of claim 1, wherein the dissimilar material components are an internal electrode and a first insulator forming an upper electrode module of an etching process chamber, or an external electrode and a second insulator.

8. 8. The modularization method for bonding dissimilar material components according to claim 7, wherein the internal electrode and the first insulator form a first module, and the external electrode and the second insulator form a second module, which are then bonded to the first module.

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